CN1202602A - Thin film type heater and method of manufacturing the same - Google Patents

Abstract

The present invention provides an hinly film-coated exothermic heater in which an initial heating time is short, instantaneous heating efficiency is maximized and the method of manufacture. The heater comprises a substrate, a plurality of single thickness unit heating layers coated on the substrate in a predetermined pattern, an electrode layer for interconnecting the unit heating layers to form a current path and a protective layer for protecting the heating layer and the electrode layer.

Description

Translated fromChinese

薄膜型加热器及 其制造方法Thin film heater and manufacturing method thereof

本发明涉及一种用作锅炉型增湿器或热水器热源的薄膜型加热器及其制造方法。The present invention relates to a film type heater used as a heat source of a boiler type humidifier or water heater and a manufacturing method thereof.

通常，锅炉型增湿器通过加热一个水箱中的水而产生蒸汽并把这些蒸汽吹入一个换风器。在上述过程中，应该控制加热器的热量而控制所产生的蒸汽量。适于这种锅炉型增湿器的加热器主要选用一种具有一个预定电阻的镍铬丝或镍铬棒加热器。加热器的热量通过改变接触电阻而改变，或者通过控制流过加热器的电流而进行改变。Typically, boiler-type humidifiers work by heating water in a tank to generate steam and blowing the steam into a ventilator. In the above process, the heat of the heater should be controlled to control the amount of steam generated. A heater suitable for this boiler type humidifier is mainly a nichrome wire or nichrome rod heater having a predetermined resistance. Heat from the heater is varied by varying the contact resistance, or by controlling the current flowing through the heater.

现有的加热器，正常增湿所需的起始时间很长，而且电极之间的接触点由于产生过多的热量可能会短路。With existing heaters, the initial time required for normal humidification is long, and the contact points between the electrodes may be short-circuited due to excessive heat generation.

为了解决上述问题，本发明的一个目的是提供一种能够微型化的、利用一种具有良好的电阻性能的材料增大瞬时加热效率的薄膜型加热器及其制造方法。In order to solve the above-mentioned problems, an object of the present invention is to provide a thin film type heater capable of miniaturization, using a material having a good resistance property to increase instantaneous heating efficiency, and a manufacturing method thereof.

因此，为了达到上述目的，根据本发明形成的一个薄膜型加热器包括：一个基底；多个以一种预定图案涂覆在该基底上的单元加热层；一个形成于该基底用于连接上述单元加热层以形成一个电流路径的电极层；和一个形成于上述基底用于保护上述加热层和电极层的保护层。Therefore, in order to achieve the above object, a film type heater formed according to the present invention includes: a base; a plurality of unit heating layers coated on the base in a predetermined pattern; an electrode layer for heating the layer to form a current path; and a protective layer formed on the substrate for protecting the heating layer and the electrode layer.

此外，加热层是由一种选自包括TaAl、Ni-Cr合金、SnO₂、HfB₂和Ta的组中的材料形成的，电极层是由一种选自于包括Al、Au、Ag、RuO₂和Pt的组中的材料形成的，而保护层是由一种选自于包括Si₃N₄、SiO₂和SiC的组中的材料形成的。In addition, the heating layer is formed of a material selected from the group consisting of TaAl, Ni-Cr alloy, SnO₂ , HfB₂ and Ta, and the electrode layer is formed of a material selected from the group consisting of Al, Au, Ag, RuO₂ and Pt, and the protective layer is formed of a material selected from the group consisting of Si₃ N₄ , SiO₂ and SiC.

根据本发明的另一方面，一种制造薄膜型加热器的方法包括以下步骤：(a)用一种选自于包括TaAl、Ni-Cr合金、SnO₂、HfB₂和Ta的组中的材料以一预定的图案在一个基底上涂覆一个薄膜，以形成一个单元加热层；(b)通过将上述各单元加热层与基底上的一电极层互连形成一个电通路；和(c)在上述基底上形成一个保护层，以保护上述加热层和电极层。According to another aspect of the present invention, a method of manufacturing a film type heater comprises the steps of: (a) using a material selected from the group consisting of TaAl, Ni-Cr alloy, SnO₂ , HfB₂ and Ta coating a film in a predetermined pattern on a substrate to form a unit heating layer; (b) forming an electrical path by interconnecting each of the above unit heating layers with an electrode layer on the substrate; and (c) in A protection layer is formed on the base to protect the heating layer and the electrode layer.

本发明的上述目的和优点将通过结合附图对优选实施例的详细描述变得更加明了。其中：The above objects and advantages of the present invention will become more apparent through the detailed description of the preferred embodiments in conjunction with the accompanying drawings. in:

图1是根据本发明形成的一个薄膜型加热器的一个截面简图；Figure 1 is a schematic cross-sectional view of a thin film heater formed in accordance with the present invention;

图2是图1中的薄膜型加热器的一个平面简图；以及Figure 2 is a schematic plan view of the thin film heater in Figure 1; and

图3A至3C是显示按照本发明形成一个薄膜型加热器的方法的平面图。3A to 3C are plan views showing a method of forming a film type heater according to the present invention.

参考图1和图2，根据本发明形成的一个薄膜型加热器包括：多个按一个预定图案在一个基底10上形成的单元加热层20；一个涂覆于基底10上用于将上述单元加热层20互连以形成一个电流通路的电极层30；和一个涂覆于上述单元加热层20、电极层30和基底10上用于保护加热层20和电极层30的保护层40。标号31代表用于给加热层20提供电流的一个接线端子，它通过引线焊接连接至例如一个锅炉型增湿器或热水器的一个主电路基底。Referring to Fig. 1 and Fig. 2, a thin film type heater formed according to the present invention comprises: a plurality ofunit heating layers 20 formed on asubstrate 10 according to a predetermined pattern; Thelayers 20 are interconnected to form anelectrode layer 30 for a current path;Reference numeral 31 denotes a terminal for supplying electric current to theheating layer 20, which is connected by wire bonding to a main circuit substrate such as a boiler type humidifier or water heater.

优选地，基底10为一个玻璃基底，加热层20、电极层30和保护层40是通过一种干涂方法例如PVD或CVD用一个金属掩模形成的。Preferably, thesubstrate 10 is a glass substrate, and theheating layer 20,electrode layer 30 andprotective layer 40 are formed by a dry coating method such as PVD or CVD with a metal mask.

优选地，加热层20由一种选自于包括TaAl、Ni-Cr合金、SnO₂、HfB₂和Ta的组中的材料形成，而电极层30由一种选自于包括Al、Au、RuO₂和Pt的具有高导电性的材料组中的材料形成。Preferably, theheating layer 20 is formed of a material selected from the group consisting of TaAl, Ni-Cr alloy, SnO₂ , HfB₂ and Ta, while theelectrode layer 30 is formed of a material selected from the group consisting of Al, Au, RuO₂ and Pt are formed of materials in the material group with high conductivity.

由介电材料形成的保护层40是由一种选自于包括Si₃N₄、SiO₂和SiC等的组中的材料沿着加热层20和电极层30的上表面线而涂覆的。Theprotective layer 40 formed of a dielectric material is coated along the upper surface lines of theheating layer 20 and theelectrode layer 30 with a material selected from the group consisting of Si₃ N₄ , SiO₂ , SiC, and the like.

根据本发明的上述薄膜型加热器，当电流通过接线端子31施加时，它将通过电极层30流过单元加热层20，因而在该单元加热层中由于其电阻而产生热。用于加热层20的材料具有很高的电阻，以使其在一个短的时间内加热到一个所需的温度。According to the above film type heater of the present invention, when current is applied through theterminal 31, it will flow through thecell heating layer 20 through theelectrode layer 30, thereby generating heat in the cell heating layer due to its resistance. The material used for theheating layer 20 has a high electrical resistance, so that it can be heated to a desired temperature in a short time.

下面将参照图3A至3C详细描述一种形成薄膜型加热器的方法。A method of forming a thin film type heater will be described in detail below with reference to FIGS. 3A to 3C.

如图3A所示，一个具有一个单元加热层图形的金属掩模(未图示)覆盖一个清洁的玻璃基底10，在5×10⁷乇的真空室内将基底10加热至200～500℃，然后注入氩气(Ar)并通过PVD或CVD沉积一种选自于包括TaAl、Ni-Cr合金、SnO₂、HfB₂和Ta的材料组中的材料，以形成一个单元加热层20。此时，可根据所需要的电阻值控制该加热层20的表面积和厚度。As shown in Figure 3A, a metal mask (not shown) with a unit heating layer pattern covers aclean glass substrate 10, and thesubstrate 10 is heated to 200-500° C. in a vacuum chamber of 5×10⁷ Torr, and then Argon gas (Ar) is injected and a material selected from a material group including TaAl, Ni-Cr alloy, SnO₂ , HfB₂ and Ta is deposited by PVD or CVD to form aunit heating layer 20 . At this time, the surface area and thickness of theheating layer 20 can be controlled according to the required resistance value.

然后，一个用于形成一个电极的金属掩模(未图示)覆盖于上述形成了加热层20的基底10上，再用PVD或CVD在一个真空室内于上述基底10上沉积一种选自于包括Al、Au、Ag、RuO₂和Pt的高导电材料组的材料，以形成一个电极层30，如图3B所示。此时，可以根据所需的电阻值合适地控制所沉积的电极层30的表面积和厚度。Then, a metal mask (not shown) for forming an electrode is covered on the above-mentionedsubstrate 10 on which theheating layer 20 is formed, and then PVD or CVD is used to deposit one selected from the above-mentionedsubstrate 10 in a vacuum chamber. materials of the highly conductive material group including Al, Au, Ag, RuO₂ and Pt to form anelectrode layer 30, as shown in FIG. 3B. At this time, the surface area and thickness of the depositedelectrode layer 30 may be appropriately controlled according to a desired resistance value.

如图3C所示，形成一个用于保护单元加热层20和电极层30的保护层40。即：在形成了加热层20和电极层30的基底10上覆盖一个用于形成一个保护层的金属掩模(未图示)，然后用PVD或CVD在一个真空室内在上述基底10上沉积一种选自于包括Si₃N₄、SiO₂和SiC的材料组中的材料。此时，优选地，沿着上述单元加热层20和电极层30上表面线沉积一个预定厚度的上述保护层40。As shown in FIG. 3C, aprotective layer 40 for protecting thecell heating layer 20 and theelectrode layer 30 is formed. That is: a metal mask (not shown) for forming a protective layer is covered on thesubstrate 10 on which theheating layer 20 and theelectrode layer 30 have been formed, and then a metal mask (not shown) is deposited on the above-mentionedsubstrate 10 in a vacuum chamber by PVD or CVD. A material selected from the group of materials comprising Si₃ N₄ , SiO₂ and SiC. At this time, preferably, theprotective layer 40 is deposited with a predetermined thickness along the upper surface lines of theunit heating layer 20 and theelectrode layer 30 .

根据本发明的薄膜型加热器，采用一种具有良好电阻性能的材料以便使初始加热时间缩短。此外，用薄膜沉积能制造小的加热器以使该加热器均匀地形成于，例如，水箱的整个内表面，从而增大瞬时加热效率。According to the film type heater of the present invention, a material having good electrical resistance is used so that the initial heating time can be shortened. In addition, a small heater can be fabricated by thin film deposition so that the heater can be uniformly formed on, for example, the entire inner surface of a water tank, thereby increasing instantaneous heating efficiency.

Claims (7)

1. a thin film type heater comprises:

A substrate;

A plurality ofly be coated on this suprabasil unit zone of heating with a predetermined pattern;

One is used for described each unit zone of heating interconnection to form the electrode layer of a current path; With

One is coated on the protective layer that described substrate is used to protect described zone of heating and electrode layer.

2. thin film type heater according to claim 1, wherein, described zone of heating is to comprise TaAl, Ni-Cr alloy, SnO by a kind of being selected from₂, HfB₂Form with material in the material group of Ta.

3. thin film type heater according to claim 1 wherein, also comprises a binding post that is used to described heater to apply electric current.

4. thin film type heater according to claim 1, wherein, described electrode layer is to comprise Al, Au, Ag, RuO by a kind of being selected from₂Form with material in the material group of Pt.

5. thin film type heater according to claim 1, wherein, described protective layer is to comprise Si by a kind of being selected from₃N₄, SiO₂Form with material in the material group of SiC.

6. thin film type heater according to claim 1, wherein, described protective layer forms and has a preset thickness along the upper surface line of described zone of heating and described electrode layer.

7. method that is used to make thin film type heater may further comprise the steps:

(a) comprise TaAl, Ni-Cr alloy, SnO with a kind of being selected from₂, HfB₂In a substrate, apply a film with the material in the material group of Ta, to form a unit zone of heating with a predetermined pattern;

(b) by with described unit zone of heating and described suprabasil electrode layer interconnection, form an electric pathway

(c) in above-mentioned substrate, form a protective layer, to protect described zone of heating and electrode layer.

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