Detailed Description
Features and exemplary embodiments of various aspects of the present application will be described in detail below, and in order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and the detailed embodiments. It should be understood that the particular embodiments described herein are meant to be illustrative of the application only and not limiting. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the application by showing examples of the application.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising" does not exclude the presence of additional identical elements in a process, method, article, or apparatus that comprises the element.
It should be noted that, in the technical scheme of the application, the acquisition, storage, use, processing and the like of the data all conform to the relevant regulations of national laws and regulations.
It should be noted that, in the embodiments of the present application, some existing solutions in the industry such as software, components, models, etc. may be mentioned, and they should be regarded as exemplary, only for illustrating the feasibility of implementing the technical solution of the present application, but it does not mean that the applicant has or must not use the solution.
In the prior art, firstly, obtaining a defect point in a mask design layout, then obtaining the defect layout from the mask design layout according to a preset size at the position of the defect point, and repairing the defect layout by utilizing an optical proximity effect. However, in the existing method, the defect layout is not accurately selected, so that new defect points are easily generated around the repaired defect layout, and the repair effect of the mask design layout is poor.
The application aims to provide a method, a device, equipment, a medium and a product for repairing a defect layout. In the method for repairing the defect layout provided by the embodiment of the application, a first defect area and a second defect area in the mask design layout are obtained. Then, according to the first repair reexamine value of the first defect area and the second repair evaluation value of the second defect area, the pattern shift degree of the first defect area after repairing the second defect area and the pattern shift degree of the second defect area after repairing the second defect area can be determined, so that whether the repair result can be consistent with the surrounding environment or not can be accurately judged. Meanwhile, the degree of pattern deviation of the first defect area after the second defect area is repaired is determined according to the first repair evaluation value, and whether new defect points are generated in the surrounding area or not under the condition that the second defect area is repaired can be determined. Therefore, the second defect area is moved according to the value of the first repair reexamine and the value of the second repair reexamine, so that the target defect layout meeting the requirements in the mask design layout is accurately positioned, new defect points can be prevented from being generated around the repaired defect layout, and the repair effect of the mask design layout is improved.
The following describes specific embodiments of a method, a device, equipment, a medium and a product for repairing a defect layout provided by the embodiment of the application. The following first describes a repair method of the defect layout.
Fig. 1 provides a flow chart of a method for repairing a defect layout, which may be applied to a server, and the method for repairing a defect layout may include the following steps S101 to S104.
S101, acquiring a first defect area and a second defect area in a mask design layout, wherein the first defect area comprises the second defect area.
In this embodiment, the first defect area and the second defect area are used to characterize the area where the defect point is located, i.e. the defect point is located in the first defect area and the second defect area. The area of the first defect area is larger than that of the second defect area, and the first defect area completely comprises the second defect area.
As an example, the server performs optical proximity effect inspection on the mask design layout to obtain defect points in the mask design layout. And then dividing a first defect area and a second defect area in the mask design layout according to the defect point positions, so that the first defect area and the second defect area cover the defect point positions, and the first defect area comprises the second defect area.
S102, determining a first repair reexamine value of the first defect area and a second repair reexamine value of the second defect area according to the first defect area and the second defect area, wherein the first repair evaluation value is used for representing the graph deviation degree of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used for representing the graph deviation degree of the second defect area caused by repairing the second defect area.
In this embodiment, the second defect area is an area participating in the repair of the defect point, and the area where the first defect area and the second defect area do not overlap is an area not participating in the repair of the defect point.
The first repair evaluation value is used for representing the degree of deviation of the pattern in the first defect area, which is caused after the second defect area is repaired. Specifically, the first repair reexamine value may be a pattern offset or a shape distortion in the first defect region.
The second repair evaluation value is used for representing the degree of deviation of the pattern in the second defect area, which is caused after the second defect area is repaired. Specifically, the second repair reexamine value may be a pattern offset or a pattern distortion in the second defect region.
As an example, after the first defect area and the second defect area in the mask design layout are obtained, the service end performs simulation repair on the layout corresponding to the second defect area, so as to obtain a layout repair result after the simulation repair.
And then, comparing the simulated repaired layout repair result with the original layout corresponding to the first defect area and the second defect area respectively, and evaluating the pattern distortion degree of the first defect area and the pattern distortion degree of the second defect area, thereby obtaining a first repair reexamine value and a second repair reexamine value.
And S103, moving the second defect area according to the value of the first repair reexamine and the value of the second repair reexamine to obtain the target defect layout.
In this embodiment, the target defect layout is used to characterize a local layout in which defect point repair is required in the finally determined mask design layout.
As an example, the server formulates an optimization strategy based on the first repair reexamine value and the second repair reexamine value. In particular, this optimization strategy aims at finding a balance point, i.e. minimizing the influence on the first defective area while minimizing the pattern shift of the second defective area itself.
And then, according to an optimization strategy, carrying out micro-movement or deformation adjustment on the second defect area to obtain a reasonable defect area which can enable the value of the first repair reexamine and the second repair evaluation value to be minimum, and determining the layout corresponding to the reasonable defect area as a target defect layout.
S104, repairing the target defect layout in the mask design layout to obtain a repaired mask layout.
In this embodiment, the repair mask layout is used to characterize the mask design layout after the defect point repair is performed.
As an example, the server uses a preset repair policy (such as line repair, line deletion, and size adjustment) to repair the target defect layout in the mask design layout, thereby obtaining a repaired repair mask layout.
Meanwhile, after repair is completed, the service end needs to verify the repaired mask design layout to ensure that all defect points are properly treated and new defect points are not introduced. And under the condition that verification is passed, obtaining the final repair mask layout.
In the repair method of the defect layout provided by the embodiment, a first defect area and a second defect area in the mask design layout are obtained. Then, according to the first repair reexamine value of the first defect area and the second repair evaluation value of the second defect area, the pattern shift degree of the first defect area after repairing the second defect area and the pattern shift degree of the second defect area after repairing the second defect area can be determined, so that whether the repair result can be consistent with the surrounding environment or not can be accurately judged. Meanwhile, the degree of pattern deviation of the first defect area after the second defect area is repaired is determined according to the first repair evaluation value, and whether new defect points are generated in the surrounding area or not under the condition that the second defect area is repaired can be determined. Therefore, the second defect area is moved according to the value of the first repair reexamine and the value of the second repair reexamine, so that the target defect layout meeting the requirements in the mask design layout is accurately positioned, new defect points can be prevented from being generated around the repaired defect layout, and the repair effect of the mask design layout is improved.
As an alternative embodiment, S101 may specifically include:
taking the position of a defect point in the mask design layout as a center, and extending a first preset size outwards to obtain a first defect area;
and taking the position of a defect point in the mask design layout as a center, and extending a second preset size outwards to obtain a second defect area, wherein the second preset size is smaller than the first preset size.
In this embodiment, the second preset size is used to characterize a size length set according to experimental data or industry standards, which is used to construct the second defect area, capable of ensuring that the defect point is effectively identified and repaired.
The first preset size is used for representing a size length set according to experimental data or industry standards, capable of ensuring that a defect point is effectively identified and repaired, and accurately identifying whether unnecessary interference is caused to a surrounding area or not, and is used for constructing a first defect area.
As an example, the service end extends outwards according to a first preset size (for example, 0.5 um) with the defect point position in the mask design layout as the center, so as to obtain a slightly larger circular area or rectangular area as the first defect area.
Meanwhile, the defect point position in the mask design layout is taken as the center, and the defect point position extends outwards according to a second preset size (for example, 0.2umx0.2 um) to obtain a smaller circular area or rectangular area as a second defect area.
According to the embodiment, the first preset size and the second preset size are respectively extended outwards by taking the position of the defect point in the mask design layout as the center, so that a first defect area and a second defect area are constructed. The method is favorable for accurately judging whether new defect points are generated in the surrounding area or not under the condition of repairing the second defect area according to the first defect area and the second defect area. Therefore, new defect points can be prevented from being generated around the repaired defect layout, and the repair effect of the mask design layout can be improved.
As an alternative embodiment, S102 may specifically include:
acquiring a first evaluation point in a first defect area and a second evaluation point in a second defect area;
determining a first offset value of each first evaluation point and a second offset value of each second evaluation point after simulation repair of the second defect area according to the first defect area and the second defect area;
a first repair reexamine value is determined from the first offset value for each first evaluation point and a second repair reexamine value is determined from the second offset value for each second evaluation point.
In the present embodiment, the first evaluation point is a position point in the first defect region that can reflect the feature of the first defect region, and the first evaluation point is a position point in the second defect region that can reflect the feature of the second defect region.
The first offset value is used for representing the variation of the first evaluation point before and after the defect point is repaired, and the second offset value is used for representing the variation of the second evaluation point before and after the defect point is repaired.
As an example, the server sets a plurality of first evaluation points and a plurality of second evaluation points in a first defect area and a second defect area in the mask design layout according to a preset sampling strategy. Specifically, the preset sampling strategy may set an evaluation point for a preset distance apart.
Then, based on simulation software (e.g., finite element analysis software, physical simulation software, etc.), a simulation repair is performed on the second defect region. The simulation repair process may include steps of filling materials, adjusting shapes, optimizing structures, and the like to simulate an actual repair process. After the simulation repair, a first offset value of each first evaluation point and a second offset value of each second evaluation point are calculated.
Finally, a first repair reexamine value is calculated based on the first offset value for each first evaluation point, and a second repair reexamine value is calculated based on the second offset value for each second evaluation point. The first repair reexamine value and the second repair evaluation value belong to a comprehensive index, which can be represented by an accumulated value, an average value or a standard deviation of the offset.
Through this embodiment, the first repair reexamine value of the first defect area and the second repair reexamine value of the second defect area can be accurately determined by using the steps of acquiring the evaluation point, determining the offset value, calculating the repair reexamine value, and the like. Thereby facilitating accurate determination of whether a new defect point will be generated in the surrounding area in the case of repairing the second defect area based on the value of the first repair reexamine and the value of the second repair reexamine. Therefore, new defect points can be prevented from being generated around the repaired defect layout, and the repair effect of the mask design layout can be improved.
As an optional embodiment, determining, according to the first defect area and the second defect area, a first offset value of each first evaluation point and a second offset value of each second evaluation point after performing simulation repair on the second defect area may specifically include:
performing simulation repair on the second defect area to obtain a first simulation repair area corresponding to the first defect area and a second simulation repair area corresponding to the second defect area;
comparing the first defect area with the first simulation repair area to obtain a first offset value of each first evaluation point in the first defect area;
and comparing the second defect area with the second simulation repair area to obtain a second offset value of each second evaluation point in the second defect area.
In this embodiment, the first simulation repair area is used to characterize an area corresponding to the first defect area after the second defect area is subjected to the simulation repair.
The second simulation repair area is used for representing an area corresponding to the second defect area after the second defect area is subjected to simulation repair.
As an example, the server accurately simulates the positions and shapes of the first defect area and the second defect area in a simulation model, and then performs repair operation on the second defect area in the simulation model. And after the second defect area is subjected to simulation repair, a first simulation repair area corresponding to the first defect area and a second simulation repair area corresponding to the second defect area are obtained.
Then, the first defect area is compared with the first simulation repair area, and the first offset value of each first evaluation point in the first defect area is obtained by comparing the position change of each first evaluation point before and after repair. And comparing the second defect area with the second simulation repair area, and calculating a second offset value of each second evaluation point in the second defect area. The calculation of the offset value can be realized by measuring the coordinate difference of the evaluation point before and after repair.
According to the embodiment, the first simulation repair area and the second simulation repair area are obtained by performing simulation repair on the second defect area. Therefore, the first offset value of the first evaluation point and the second offset value of the second evaluation point can be accurately calculated through the first simulation repair area and the second simulation repair area. The method is favorable for accurately calculating the first repair reexamine value of the first defect area and the second repair reexamine value of the second defect area according to the first offset value and the second offset value.
As an alternative embodiment, S103 may specifically include:
performing multiple movements on the second defect area to obtain a plurality of candidate defect areas;
Determining, for each candidate defect region, a corresponding first update repair reexamine value and a second update repair reexamine value for each candidate defect region;
And determining a target defect layout in the mask design layout according to the candidate defect area corresponding to the minimum first updated repair evaluation value and the minimum second updated repair evaluation value.
In this embodiment, the candidate defect region is used to characterize a region corresponding to the second defect region after the second defect region is moved.
The first updated repair evaluation value is used for representing the graph deviation degree of the first defect area caused by repairing the candidate defect area, and the second updated repair evaluation value is used for representing the graph deviation degree of the candidate defect area caused by repairing the candidate defect area obtained after the second defect area is moved.
As an example, the server generates a plurality of different candidate defect areas by performing a minor position adjustment or shape change on the second defect area. These adjustments may be made based on preset rules, random search, or optimization algorithms, among others.
Then, for each candidate defect region, the first update reexamine value of the first defect region and the second update reexamine value of the candidate defect region after performing the defect point repair on the candidate defect region are determined according to the same calculation method as the first repair reexamine value and the second repair evaluation value.
And finally, finding out target candidate defect areas which simultaneously meet the minimum first updating repair evaluation value and the minimum second updating repair evaluation value in all candidate defect areas, and determining the corresponding layout of the target candidate defect areas in the mask design layout as a target defect layout. This means that it is possible to avoid new defect points from being generated around after the defect point repair is performed on the target defect layout.
Through the embodiment, the second defect area is moved for multiple times, so as to obtain multiple candidate defect areas. And selecting a layout corresponding to the candidate defect area with the minimum first updated repair evaluation value and the minimum second updated repair evaluation value from the candidate defect areas as a target defect layout. Therefore, new defect points can be prevented from being generated around the repaired defect layout, and the repair effect of the mask design layout can be improved.
As an optional embodiment, before S101, the repair method of the defect layout may further include:
Taking the position of a defect point in the mask design layout as a center, and extending outwards by a third preset size to obtain a defect background area;
Dividing a defect background layout corresponding to the defect background area from the mask design layout;
S101 may specifically include:
and acquiring a first defect area and a second defect area in the defect background layout.
In this embodiment, the third preset size is larger than the first preset size, and the first preset size is larger than the second preset size.
The defect background layout comprises a first defect area which completely comprises a second defect area.
As an example, as shown in fig. 2, a schematic diagram of a defect background layout is provided. Specifically, the present invention relates to a method for manufacturing a semiconductor device. The service end extends outwards according to a third preset size (for example, 5um x 5 um) by taking the defect point position 204 in the mask design layout as a center, and a larger rectangular area is obtained as a defect background area.
Then, a defect background layout 201 corresponding to the defect background area in the mask design layout is determined and segmented from the mask design layout. Meanwhile, in the defect background layout 201, a first defect area 202 is determined according to a first preset size, and a second defect area 203 is determined according to a second preset size.
According to the embodiment, a larger-range defect background layout including the defect point positions is obtained from the mask design layout and used as a defect point repairing environment, so that the result of fusion of the original mask design layout after the defect point repairing is expected, and the phenomenon that the original mask design layout is not expected after the defect point repairing is avoided.
As an alternative embodiment, S104 may specifically include:
repairing a target defect layout in the defect background layout through an optical proximity effect to obtain a repaired defect background layout;
and fusing the repaired defect background layout with the mask design layout to obtain a repaired mask layout.
In this embodiment, the server determines the target defect layout in the defect background layout. And repairing the target defect by adopting an optical proximity effect correction technology. The optical proximity effect correction technology comprises methods of minimizing line width variation, reducing line end shortening, square angle correction and the like.
Specifically, the line width variation minimization method corrects proximity effect and nonlinear distortion by adjusting line width of the pattern, the line end shortening reduction method reduces line end shortening by extending line end, adding a truncated line type or hammerhead type correction pattern, and the square angle correction method reduces square angle rounding phenomenon by compensating truncated line type correction for square angle area.
Then, after the repair of the target defect layout is completed. And splicing the repaired defect background layout back to the original mask design layout to obtain a repaired mask layout, so that the repaired graph can be ensured to be accurately copied to the chip.
According to the embodiment, the target defects in the defect background layout are repaired by utilizing the methods of optical proximity effect repair and mask design layout fusion, so that a repair mask layout meeting design requirements can be generated, and the repair effect of the mask design layout can be improved.
As an optional embodiment, after S104, the repair method of the defect layout may further include:
performing photoetching rule inspection on the repaired mask layout to obtain a rule inspection result;
And determining the repair mask layout as a target mask layout for preparing the mask under the condition that the rule checking result indicates that the repair mask layout accords with the preset photoetching rule.
In this embodiment, the server defines a series of photolithography rules according to the requirements of the photolithography process and the standards of semiconductor manufacturing. After obtaining the repair mask layout, the server uses photolithography rule checking software to scan and analyze the repair mask layout. The photoetching rule checking software can check each graphic element in the repair mask layout according to the predefined photoetching rule, and generates a rule checking result.
Under the condition that the rule checking result indicates that the repair mask layout accords with the preset photoetching rule, the layout can be considered to meet the requirements of the photoetching process. At this time, the repair mask layout is determined as the target mask layout for preparing the mask. This step marks the end of the photolithography rule inspection flow and provides a reliable basis for subsequent mask preparation and chip fabrication.
By the method, the repair mask layout is subjected to photoetching rule inspection, so that the repair mask layout can be ensured to meet the requirements of a photoetching process, and the repair mask layout is determined to be a target mask layout for preparing a mask. Thus, the repair mask layout is further subjected to photoetching rule inspection, and the reliability of chip manufacturing can be improved.
A repair method based on a defect layout. Correspondingly, the application also provides a specific embodiment of the repair device of the defect layout.
As shown in fig. 3, the repair device 300 for a defect layout provided in the embodiment of the present application includes a region acquisition module 310, an evaluation value determination module 320, a region movement module 330, and a layout repair module 340.
The region acquiring module 310 is configured to acquire a first defect region and a second defect region in the mask design layout, where the first defect region includes the second defect region.
The evaluation value determining module 320 is configured to determine a first repair reexamine value of the first defect area and a second repair reexamine value of the second defect area according to the first defect area and the second defect area, where the first repair evaluation value is used to characterize a graphics shift degree of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize a graphics shift degree of the second defect area caused by repairing the second defect area.
The region moving module 330 is configured to move the second defect region according to the first repair reexamine value and the second repair reexamine value, and obtain the target defect layout.
And the layout repair module 340 is used for repairing the target defect layout in the mask design layout to obtain a repaired mask layout.
As an alternative embodiment, the area acquisition module 310 specifically includes the following units:
The region acquisition unit is used for taking the position of a defect point in the mask design layout as a center, and extending a first preset size outwards to obtain a first defect region;
The region acquisition unit is used for taking the position of the defect point in the mask design layout as the center, and extending outwards by a second preset size to obtain a second defect region, wherein the second preset size is smaller than the first preset size.
As an alternative embodiment, the evaluation value determination module 320 specifically includes the following units:
An evaluation point acquisition unit configured to acquire a first evaluation point in the first defect area and a second evaluation point in the second defect area;
the offset value determining unit is used for determining a first offset value of each first evaluation point and a second offset value of each second evaluation point after simulation repair of the second defect area according to the first defect area and the second defect area;
The first evaluation value determining unit is configured to determine a first repair reexamine value according to a first offset value of each first evaluation point, and determine a second repair reexamine value according to a second offset value of each second evaluation point.
As an alternative embodiment, the offset value determining unit is specifically configured to:
performing simulation repair on the second defect area to obtain a first simulation repair area corresponding to the first defect area and a second simulation repair area corresponding to the second defect area;
comparing the first defect area with the first simulation repair area to obtain a first offset value of each first evaluation point in the first defect area;
and comparing the second defect area with the second simulation repair area to obtain a second offset value of each second evaluation point in the second defect area.
As an alternative embodiment, the area moving module 330 specifically includes the following units:
The area moving unit is used for moving the second defect area for multiple times to obtain a plurality of candidate defect areas;
A second evaluation value determination unit configured to determine, for each candidate defect region, a first update restoration reexamine value and a second update restoration reexamine value corresponding to each candidate defect region;
the layout determining unit is used for determining a target defect layout in the mask design layout according to the candidate defect area with the minimum first updating repair evaluation value and the minimum second updating repair evaluation value.
As an alternative embodiment, before acquiring the first defect area and the second defect area in the mask design layout, the repairing apparatus 300 for a defect layout further includes the following modules:
The background determining module is used for taking the position of a defect point in the mask design layout as a center, and extending outwards by a third preset size to obtain a defect background area;
the layout segmentation module is used for segmenting a defect background layout corresponding to the defect background area from the mask design layout;
The area acquisition module 310 is specifically configured to:
and acquiring a first defect area and a second defect area in the defect background layout.
As an alternative embodiment, layout repair module 340 specifically includes the following elements:
the layout repair unit is used for repairing the target defect layout in the defect background layout through the optical proximity effect to obtain a repaired defect background layout;
And the layout fusion unit is used for fusing the repaired defect background layout with the mask design layout to obtain a repaired mask layout.
As an alternative embodiment, the repairing device 300 for repairing a target defect layout in a mask design layout, after obtaining a repaired mask layout, further includes the following modules:
the rule detection module is used for carrying out photoetching rule inspection on the repair mask layout to obtain rule inspection results;
The layout determining module is used for determining the repair mask layout as a target mask layout for preparing a mask under the condition that the rule checking result indicates that the repair mask layout accords with a preset photoetching rule.
A repair method based on a defect layout. Correspondingly, the application also provides a specific embodiment of the repair equipment of the defect layout.
Fig. 4 shows a schematic hardware structure of a repair device for a defect layout according to an embodiment of the present application.
The repair device of the defect layout may comprise a processor 401 and a memory 402 storing computer program instructions.
In particular, the processor 401 may include a Central Processing Unit (CPU), or an Application SPECIFIC INTEGRATED Circuit (ASIC), or may be configured as one or more integrated circuits that implement embodiments of the present application.
Memory 402 may include mass storage for data or instructions. By way of example, and not limitation, memory 402 may comprise a hard disk drive (HARD DISK DRIVE, HDD), a floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or a universal serial bus (Universal Serial Bus, USB) drive, or a combination of two or more of the foregoing. Memory 402 may include removable or non-removable (or fixed) media, where appropriate. Memory 402 may be internal or external to the integrated gateway disaster recovery device, where appropriate. In a particular embodiment, the memory 402 is a non-volatile solid state memory.
The processor 401 reads and executes the computer program instructions stored in the memory 402 to implement the repairing method of the defect layout in any of the above embodiments.
In one example, the repair device of the defect layout may further include a communication interface 403 and a bus 410. As shown in fig. 4, the processor 401, the memory 402, and the communication interface 403 are connected by a bus 410 and perform communication with each other.
The communication interface 403 is mainly used to implement communication between each module, device, unit and/or apparatus in the embodiment of the present application.
Bus 410 includes hardware, software, or both, coupling components of the repair device of the defective layout to each other. By way of example, and not limitation, the buses may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an infiniband interconnect, a Low Pin Count (LPC) bus, a memory bus, a micro channel architecture (MCa) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a video electronics standards association local (VLB) bus, or other suitable bus, or a combination of two or more of the above. Bus 410 may include one or more buses, where appropriate. Although embodiments of the application have been described and illustrated with respect to a particular bus, the application contemplates any suitable bus or interconnect.
In addition, in combination with the method for repairing the defect layout in the above embodiment, the embodiment of the application can be realized by providing a computer storage medium. The computer storage medium is stored with computer program instructions which when executed by the processor implement the repair method of any one of the defect layouts in the above embodiments.
In addition, in combination with the method for repairing a defective layout in the foregoing embodiment, an embodiment of the present application may be implemented by providing a computer program product, where instructions in the computer program product, when executed by a processor of an electronic device, cause the electronic device to execute the method for repairing a defective layout provided in any aspect of the foregoing embodiment of the present application.
It should be understood that the application is not limited to the particular arrangements and instrumentality described above and shown in the drawings. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and shown as examples. The method processes of the present application are not limited to the specific steps described and shown, but various changes, modifications and additions, or the order between steps may be made by those skilled in the art after appreciating the spirit of the present application.
The functional blocks shown in the above-described structural block diagrams may be implemented in hardware, software, firmware, or a combination thereof. When implemented in hardware, it may be, for example, an electronic circuit, an Application Specific Integrated Circuit (ASIC), suitable firmware, a plug-in, a function card, or the like. When implemented in software, the elements of the application are the programs or code segments used to perform the required tasks. The program or code segments may be stored in a machine readable medium or transmitted over transmission media or communication links by a data signal carried in a carrier wave. A "machine-readable medium" may include any medium that can store or transfer information. Examples of machine-readable media include electronic circuitry, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio Frequency (RF) links, and the like. The code segments may be downloaded via computer networks such as the internet, intranets, etc.
It should also be noted that the exemplary embodiments mentioned in this disclosure describe some methods or systems based on a series of steps or devices. The present application is not limited to the order of the above-described steps, that is, the steps may be performed in the order mentioned in the embodiments, or may be performed in a different order from the order in the embodiments, or several steps may be performed simultaneously.
Aspects of the present disclosure are described above with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the disclosure. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions/acts specified in the flowchart and/or block diagram block or blocks. Such a processor may be, but is not limited to being, a general purpose processor, a special purpose processor, an application specific processor, or a field programmable logic circuit. It will also be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware which performs the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In the foregoing, only the specific embodiments of the present application are described, and it will be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the systems, modules and units described above may refer to the corresponding processes in the foregoing method embodiments, which are not repeated herein. It should be understood that the scope of the present application is not limited thereto, and any equivalent modifications or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and they should be included in the scope of the present application.