Movatterモバイル変換


[0]ホーム

URL:


CN119542127A - A step structure surface graphic processing technology - Google Patents

A step structure surface graphic processing technology
Download PDF

Info

Publication number
CN119542127A
CN119542127ACN202510096316.3ACN202510096316ACN119542127ACN 119542127 ACN119542127 ACN 119542127ACN 202510096316 ACN202510096316 ACN 202510096316ACN 119542127 ACN119542127 ACN 119542127A
Authority
CN
China
Prior art keywords
glue
step structure
bottom layer
patterning
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202510096316.3A
Other languages
Chinese (zh)
Other versions
CN119542127B (en
Inventor
丁宇能
葛文志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Meidikai Photoelectric Technology Co ltd
Original Assignee
Hangzhou Meidikai Photoelectric Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Meidikai Photoelectric Technology Co ltdfiledCriticalHangzhou Meidikai Photoelectric Technology Co ltd
Priority to CN202510096316.3ApriorityCriticalpatent/CN119542127B/en
Publication of CN119542127ApublicationCriticalpatent/CN119542127A/en
Application grantedgrantedCritical
Publication of CN119542127BpublicationCriticalpatent/CN119542127B/en
Activelegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

Links

Classifications

Landscapes

Abstract

Translated fromChinese

本发明提供一种台阶结构表面图形化加工工艺,其包括以下步骤,在产品台阶结构上表面及凹陷处涂底层胶,台阶结构上表面与台阶结构导致的凹陷处的底层胶连续涂布不断裂、联结为一个整体;通过高温烘烤将底层胶固化定型,涂彩色胶,烘烤,采用光刻、显影对彩色胶图形化并坚膜,最后采用干刻工艺将超出台阶结构边缘底层胶去除。为了在台阶结构表面图形化红色彩胶不出现膜缺,通过增加底层胶厚度、降低旋涂速率提升其填平能力,使上层红色彩胶在不改变红色彩胶粘度的情况下,台阶边缘处经图形化后不出现膜缺,提升良品率,弥补红色彩胶粘度低的应用劣势,且与传统的增加彩胶厚度的方式相比更降低成本、提升效率。

The present invention provides a surface patterning processing technology for a step structure, which includes the following steps: coating the bottom layer glue on the upper surface and the concave part of the step structure of the product, the bottom layer glue on the upper surface of the step structure and the concave part caused by the step structure is continuously coated without breaking and connected as a whole; curing and shaping the bottom layer glue by high-temperature baking, coating the color glue, baking, patterning the color glue by photolithography and development and hardening the film, and finally removing the bottom layer glue beyond the edge of the step structure by dry etching process. In order to prevent film defects from occurring when patterning the red color glue on the surface of the step structure, the filling ability of the bottom layer glue is improved by increasing the thickness of the bottom layer glue and reducing the spin coating rate, so that the upper layer of the red color glue does not have film defects at the edge of the step after patterning without changing the viscosity of the red color glue, thereby improving the yield rate and making up for the application disadvantage of the low viscosity of the red color glue, and reducing the cost and improving the efficiency compared with the traditional method of increasing the thickness of the color glue.

Description

Step structure surface graphical processing technology
Technical Field
The invention belongs to the technical field of semiconductors, relates to a gluing process, and particularly relates to a step structure surface graphical processing technology.
Background
The step structure can appear after the wafer is through multilayer coating film, tectorial membrane, and during the rubber coating, step structure can change the coating state of glue, and glue is drawn thin, break off by step structure easily, especially the lower glue of viscosity to lead to appearing the condition that the membrane lacks in the later process, the yields reduces. The step structure surface color glue is patterned, the color glue is used as an auxiliary layer, the color glue can be effectively left on the wafer after being developed, so that the patterning processing requirement is met, the bottom glue has no photosensitivity and cannot be influenced by photoetching patterning, and the red color glue is negative photoresist. The traditional mode is to thin the red color glue above the step edge after spin coating due to the height difference of the steps, the thin red color glue can be in film shortage after exposure and development, and the development principle of the developing solution on the red color glue (negative glue) is that the etching rate of an exposure area is far smaller than that of an unexposed part, namely the exposure part can be actually etched by a part, and the thin red color glue at the step edge can be in film shortage.
The color glue on the surface of the step structure is patterned, most of industries adopt the method that the thickness of the color glue is increased, after the glue is coated, the film is hardened after soft baking, exposure and development, and the patterned film can be formed on the surface of the step without film shortage. The red color glue is low in adhesiveness, the thickness is generally required to be increased through a multiple spin coating mode, the cost is increased, the efficiency is reduced, in addition, along with continuous updating of the requirements of customers on the bottom glue and the color glue, when the red color glue with low viscosity is used, the thickness of the edge glue is thinned due to the influence of steps on the red color glue, and obvious film defects appear in the red color glue at the edges of the steps.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a step structure surface patterning processing technology.
In order to achieve the above object, the present invention provides a method for patterning a surface of a step structure, comprising the steps of,
1) Coating bottom layer glue on the upper surface of the step structure of the product and the concave position caused by the step structure, wherein the bottom layer glue on the upper surface of the step structure and the concave position caused by the step structure are continuously coated and are not broken, and are connected into a whole;
2) Solidifying and shaping the bottom glue by high-temperature baking;
3) Coating color glue and baking;
4) Patterning and hardening the color glue by adopting photoetching and developing;
5) And removing the bottom glue beyond the edge of the step structure by adopting a dry etching process.
Preferably, in step 1), the included angle formed by the glue surface of the bottom layer after glue coating and the plane of the base layer of the product step structure is smaller than 50 degrees.
Preferably, in step 1), the included angle formed by the glue surface of the bottom layer after glue coating and the plane of the base layer of the product step structure is smaller than 30 degrees.
Preferably, the base layer is a wafer layer, the product step structure is positioned on a wafer plane, and the included angle between the surface of the glue on the bottom layer and the wafer plane after glue coating is less than 50 degrees.
Preferably, the base layer is a wafer layer, the product step structure is positioned on a wafer plane, and the included angle between the surface of the glue on the bottom layer and the wafer plane after glue coating is less than 30 degrees.
Preferably, in the step 1), the primer is coated by adopting a low-speed spin coating process, so that the thickness of the primer is increased, the viscosity of the primer is 3-2000cp, and the rotating speed is 250-4700r/min. Further preferably, the viscosity of the primer is 300cp-400cp and the rotating speed is 250-500r/min.
Preferably, in the step 1), the thickness of the bottom layer glue is more than 1 time of the height of the step structure.
Preferably, in step 1), the step structure height is 5-8 μm.
Preferably, in the step 3), the spin-coating speed of the spin-coating color glue is adjusted according to the product requirement.
Preferably, in step 3), the baking temperature is 70-120 ℃ and the baking time is 30-300s. Further preferably, the soft baking temperature is 80-100 ℃ and the time is 60-180s.
Preferably, the hardening temperature is 140-250 ℃ and the hardening time is 180-900s. Further preferably, the hardening temperature is 180-220 ℃ and the hardening time is 300-600s.
Preferably, in the step 3), the color adhesive is less than 10cp, and a spin coating process is adopted, and the spin coating rotating speed is 250-400r/min.
Preferably, the spin coating rotational speed of the color glue is 400 rpm.
Preferably, the color glue is red glue.
The invention provides a step structure product obtained by the step structure surface patterning processing method, which sequentially comprises a base layer, a step structure, bottom glue and color glue, wherein the color glue is patterned.
Preferably, the base layer is a wafer layer.
The beneficial effects of the invention are as follows:
The bottom layer glue has no photosensitivity, the step structure influences the thickness of the bottom layer glue, but the bottom layer glue is still integrated with the steps, so that the red color glue is patterned on the surface of the step structure, and the filling capacity of the bottom layer glue is improved by increasing the thickness of the bottom layer glue and reducing the spin coating rate.
Drawings
FIG. 1 is a diagram showing a state of a film-lacking layer coated with color glue by a traditional method of a product with a step structure;
FIG. 2 is a schematic diagram of the structure of the process of the present invention after spin coating the primer at low speed and large area and applying the color paste (before dry etching);
FIG. 3 is a graph showing the results of the dry etching process of the present invention.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present application, the present application will be further described with reference to the following specific examples.
The process is applied to processing of the optical path layer of the image sensor and processing of the optical path layer of the fingerprint sensor under the screen.
As shown in fig. 1, although the primer coating area is sufficient to meet the product requirement of color coating, there is a distinct lack of adhesive layer area on both sides after color (red) coating. The technical scheme adopted by the invention is that the surface graphical processing technology of the step structure is characterized in that the step structure product sequentially comprises a base layer, a step structure, a bottom adhesive layer and a color adhesive layer from bottom to top, the step structure at least comprises a first step layer and a second step layer, a step or gap is formed between the step structure and the base layer, the bottom adhesive is coated on the upper surface of the step structure and between the step structure and the base layer, and the whole without fracture and connection is formed by continuous coating, so that filling and leveling are realized. The specific processing technology comprises the following steps:
1) Spin coating the bottom layer glue on the upper surface of the step structure of the product, wherein the viscosity of the bottom layer glue is 3cp-2000cp, the spin coating rotating speed is 250-4700r/min, the thickness of the bottom layer glue is more than 1 time of the height of the step structure, and the included angle between the surface of the bottom layer glue and a wafer plane after glue coating is less than 50 degrees;
2) Solidifying and shaping the bottom glue by high-temperature baking;
3) Spin-coating color glue, wherein the spin-coating speed of the color glue is adjusted according to the product requirement, and the color glue is baked after spin-coating at 70-120 ℃ for 30-300s;
4) And (3) patterning and hardening the color glue by adopting photoetching and developing, wherein the hardening temperature is 140-250 ℃ and the hardening time is 180-900s.
5) And removing the bottom glue beyond the edge of the step structure by adopting a dry etching process.
Example 1
As shown in fig. 2-3, the product with the step structure takes the wafer layer as an example, and the two-layer structure of the step structure, the part between the step structure and the base layer and the part between the wafer layer and the pad are all filled with the bottom layer glue. The height of the step is 5-8 mu m, the height difference of the step layer is 0.5-2 mu m, the adhesiveness of the bottom layer is 300-400cp, and the color adhesive is red adhesive with the viscosity less than 10 cp. The specific processing technology in the embodiment comprises the following steps:
1) Spin coating the bottom layer glue on the upper surface of the step structure of the product, wherein the viscosity of the bottom layer glue is 300cp-400cp, the spin coating rotating speed is 400r/min, the height of the step structure is 7um, the thickness of the bottom layer glue is more than 1 time of the height of the step structure, the thickness of the bottom layer glue is 7-8um in the embodiment, and the included angle between the surface of the bottom layer glue and a wafer plane after glue coating is less than 30 degrees;
2) Solidifying and shaping the bottom glue by high-temperature baking;
3) Spin-coating color glue, wherein the spin-coating speed of the color glue is adjusted according to the product requirement, and soft baking is performed after spin-coating, wherein the soft baking temperature is 80-100 ℃ and the time is 60-180s;
4) Patterning and hardening the color glue by adopting photoetching and developing, wherein the hardening temperature is 180-220 ℃ and the hardening time is 300-600s;
5) And removing the bottom glue beyond the edge of the step structure by adopting a dry etching process.
According to the process, the thickness of the bottom layer glue is increased by reducing the rotating speed when the bottom layer glue is spin-coated, when the glue viscosity is 300-400cp, 400 rpm is adopted, the bottom layer glue forms a gentle slope on the outer edge of the step structure, the height difference caused by the step structure is reduced, a large-scale support is provided for red glue, the thickness of the edge of the step structure is consistent with the thickness of the middle of the step when the red glue is spin-coated, the included angle formed by the surface of the bottom layer glue and the base layer plane of the step structure of a product is less than 50 ℃, the spin-coated red glue is prevented from being stretched, uneven thinning is avoided, the film shortage is avoided after exposure development is ensured, the yield is improved by 100%, and the bottom layer glue is solidified and fixed through high-temperature baking.
Fig. 2 shows that the spreading area of the primer in the graph is enlarged to the whole plane of the substrate (wafer) in order to show the effect of the primer after filling the steps, the primer is rotated during spreading, the step structure and the edge drop and the middle gap (wafer+pad) of the substrate are fully filled by slow spin coating, because the drop and the gap exist, the relative gradient of the glue layer needs to be reduced during ensuring the spreading thickness, and the glue layer, the drop and gap filling control and the product layers are integrally controlled to provide multiple supports for the subsequent spreading of the color glue, so that the efficient spin coating of the low-viscosity color glue according to the product needs is adapted. The red color adhesive is spin-coated on the surface of a product and soft baked on the premise of not changing the viscosity and ensuring the uniformity of the thickness of the adhesive to meet the requirements, is patterned by photoetching and developing, is then hardened, and can meet the requirements of customers by the existing viscosity red color adhesive. And carrying out appearance scanning on the effective area of the product by detection equipment to confirm that the edges of the step structure are not provided with film defects. As shown in fig. 3, the final form of the product is such that the underlying layer above the pad has a portion that needs to be removed by dry etching. The primer which is not needed in the product design is etched, the primer has no photosensitivity, after the filling effect is provided for the spin coating of the red color primer, the primer above the PAD and the channel of the chip is finally required to be etched and removed, and only the primer above the effective area of the chip is reserved.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.

Claims (10)

Translated fromChinese
1.一种台阶结构表面图形化加工方法,其特征在于:包括以下步骤,1. A method for processing a stepped structure surface pattern, characterized in that it comprises the following steps:1)在产品台阶结构上表面及台阶结构与基层之间涂布底层胶,底层胶连续涂布不断裂、联结为一个整体;1) Apply the base glue on the upper surface of the step structure of the product and between the step structure and the base layer. The base glue is applied continuously without breaking and connected as a whole;2)通过高温烘烤将底层胶固化定型;2) Curing the bottom glue by high temperature baking;3)涂彩色胶,烘烤;3) Apply colored glue and bake;4)采用光刻、显影对彩色胶图形化并坚膜;4) Use photolithography and development to pattern the color glue and harden the film;5)采用干刻工艺将超出台阶结构边缘底层胶去除。5) Use dry etching process to remove the bottom layer glue beyond the edge of the step structure.2.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤1)中,涂胶后底层胶表面与产品台阶结构的基层平面形成的夹角小于50度。2. The method for processing the surface pattern of a step structure according to claim 1 is characterized in that: in step 1), the angle formed by the surface of the bottom glue layer after glue coating and the base plane of the product step structure is less than 50 degrees.3.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤1)中,涂底层胶采用低速旋涂工艺,底层胶的粘度为3-2000cp,转速为250-4700r/min。3. The method for patterning a stepped structure surface according to claim 1 is characterized in that: in step 1), the bottom layer glue is applied by a low-speed spin coating process, the viscosity of the bottom layer glue is 3-2000cp, and the rotation speed is 250-4700r/min.4.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤1)中,底层胶厚大于台阶结构高度的1倍以上。4 . The method for patterning a stepped structure surface according to claim 1 , wherein in step 1), the thickness of the bottom layer glue is more than 1 times the height of the stepped structure.5.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤1)中,台阶结构高度为5-8μm。5 . The method for processing a stepped structure surface pattern according to claim 1 , wherein in step 1), the height of the stepped structure is 5-8 μm.6.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤3)中,旋涂彩色胶根据产品需要进行旋涂速度的调整即可。6 . The method for patterning a stepped structure surface according to claim 1 , wherein in step 3), the spin coating speed of the color glue is adjusted according to product requirements.7.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤3)中,烘烤温度70-120℃,时间30-300s。7. The method for processing a stepped structure surface pattern according to claim 1, characterized in that: in step 3), the baking temperature is 70-120°C and the time is 30-300s.8.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:步骤4)中,坚膜温度140-250℃,时间180-900s。8. The method for processing a stepped structure surface pattern according to claim 1, characterized in that: in step 4), the film hardening temperature is 140-250°C and the time is 180-900s.9.根据权利要求1所述的台阶结构表面图形化加工方法,其特征在于:其特征在于:所述彩色胶为红胶。9. The method for graphically processing a stepped structure surface according to claim 1, characterized in that: the colored glue is red glue.10.根据权利要求1所述的台阶结构表面图形化加工方法所得的台阶结构产品,其特征在于:依次包括基层、台阶结构、底层胶和彩色胶,所述彩色胶呈图形化。10. The step structure product obtained by the step structure surface patterning processing method according to claim 1 is characterized in that it comprises a base layer, a step structure, a bottom layer glue and a color glue in sequence, and the color glue is patterned.
CN202510096316.3A2025-01-222025-01-22Step structure surface graphical processing technologyActiveCN119542127B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN202510096316.3ACN119542127B (en)2025-01-222025-01-22Step structure surface graphical processing technology

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN202510096316.3ACN119542127B (en)2025-01-222025-01-22Step structure surface graphical processing technology

Publications (2)

Publication NumberPublication Date
CN119542127Atrue CN119542127A (en)2025-02-28
CN119542127B CN119542127B (en)2025-05-13

Family

ID=94701539

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CN202510096316.3AActiveCN119542127B (en)2025-01-222025-01-22Step structure surface graphical processing technology

Country Status (1)

CountryLink
CN (1)CN119542127B (en)

Citations (20)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6709965B1 (en)*2002-10-022004-03-23Taiwan Semiconductor Manufacturing CompanyAluminum-copper bond pad design and method of fabrication
JP2005033141A (en)*2003-07-112005-02-03Sony CorpSemiconductor device, its manufacturing method, false wafer, its manufacturing method, and packaging structure of semiconductor device
CN101051184A (en)*2007-05-112007-10-10中国科学院光电技术研究所Large-area micro-nano structure soft stamping method
US20090102021A1 (en)*2007-10-172009-04-23Chih-Hua ChenThrough-Silicon Vias and Methods for Forming the Same
CN103151436A (en)*2013-02-202013-06-12华中科技大学Preparation method of poroid GaN-based photonic crystal LED (Light Emitting Diode)
CN104810277A (en)*2014-01-262015-07-29北大方正集团有限公司Wafer surface flattening process
CN108109907A (en)*2017-12-192018-06-01武汉新芯集成电路制造有限公司A kind of bonding method for optimizing crystal round fringes and removing
US20180284615A1 (en)*2017-03-312018-10-04Shin-Etsu Chemical Co., Ltd.Resist underlayer film composition, patterning process, and method for forming resist underlayer film
CN111983893A (en)*2020-08-282020-11-24中国科学院微电子研究所Gluing and photoetching method applied to wafer with steps on surface
CN113889553A (en)*2021-10-292022-01-04中国电子科技集团公司第十八研究所 A Wet Step Etching Process for GaInP/GaInAs/Ge Solar Cells
CN114985228A (en)*2022-05-102022-09-02武汉理工大学 A glue coating process to improve the high temperature resistance of the sensor
CN116130355A (en)*2023-01-162023-05-16杭州美迪凯微电子有限公司Process for manufacturing positive trapezoid glue shape by dry etching
WO2023103061A1 (en)*2021-12-092023-06-15武汉华星光电半导体显示技术有限公司Display panel
CN116462793A (en)*2023-04-102023-07-21江苏长进微电子材料有限公司 A kind of polymer for bottom glue of double-layer stripping process, bottom glue composition and application
CN116978781A (en)*2023-09-062023-10-31国科天骥(山东)新材料有限责任公司Photoetching patterning method, structure and metal patterning method in chip manufacturing
CN117393419A (en)*2023-11-072024-01-12中国电子科技集团公司第五十五研究所 Whole wafer surface patterning method
CN117396025A (en)*2023-06-062024-01-12安徽熙泰智能科技有限公司Silicon-based OLED transverse turbulence partition structure and manufacturing method thereof
CN118377200A (en)*2024-05-282024-07-23无锡奥夫特光学技术有限公司Post-exposure baking method for substrate with steps on surface
CN118588537A (en)*2024-06-182024-09-03杭州美迪凯光电科技股份有限公司 A stripping process based on dry film patterning
CN119105238A (en)*2024-09-272024-12-10上海新微技术研发中心有限公司 A method for spin coating photoresist on high-step wafer and its application

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6709965B1 (en)*2002-10-022004-03-23Taiwan Semiconductor Manufacturing CompanyAluminum-copper bond pad design and method of fabrication
JP2005033141A (en)*2003-07-112005-02-03Sony CorpSemiconductor device, its manufacturing method, false wafer, its manufacturing method, and packaging structure of semiconductor device
CN101051184A (en)*2007-05-112007-10-10中国科学院光电技术研究所Large-area micro-nano structure soft stamping method
US20090102021A1 (en)*2007-10-172009-04-23Chih-Hua ChenThrough-Silicon Vias and Methods for Forming the Same
CN103151436A (en)*2013-02-202013-06-12华中科技大学Preparation method of poroid GaN-based photonic crystal LED (Light Emitting Diode)
CN104810277A (en)*2014-01-262015-07-29北大方正集团有限公司Wafer surface flattening process
US20180284615A1 (en)*2017-03-312018-10-04Shin-Etsu Chemical Co., Ltd.Resist underlayer film composition, patterning process, and method for forming resist underlayer film
CN108109907A (en)*2017-12-192018-06-01武汉新芯集成电路制造有限公司A kind of bonding method for optimizing crystal round fringes and removing
CN111983893A (en)*2020-08-282020-11-24中国科学院微电子研究所Gluing and photoetching method applied to wafer with steps on surface
CN113889553A (en)*2021-10-292022-01-04中国电子科技集团公司第十八研究所 A Wet Step Etching Process for GaInP/GaInAs/Ge Solar Cells
WO2023103061A1 (en)*2021-12-092023-06-15武汉华星光电半导体显示技术有限公司Display panel
CN114985228A (en)*2022-05-102022-09-02武汉理工大学 A glue coating process to improve the high temperature resistance of the sensor
CN116130355A (en)*2023-01-162023-05-16杭州美迪凯微电子有限公司Process for manufacturing positive trapezoid glue shape by dry etching
CN116462793A (en)*2023-04-102023-07-21江苏长进微电子材料有限公司 A kind of polymer for bottom glue of double-layer stripping process, bottom glue composition and application
CN117396025A (en)*2023-06-062024-01-12安徽熙泰智能科技有限公司Silicon-based OLED transverse turbulence partition structure and manufacturing method thereof
CN116978781A (en)*2023-09-062023-10-31国科天骥(山东)新材料有限责任公司Photoetching patterning method, structure and metal patterning method in chip manufacturing
CN117393419A (en)*2023-11-072024-01-12中国电子科技集团公司第五十五研究所 Whole wafer surface patterning method
CN118377200A (en)*2024-05-282024-07-23无锡奥夫特光学技术有限公司Post-exposure baking method for substrate with steps on surface
CN118588537A (en)*2024-06-182024-09-03杭州美迪凯光电科技股份有限公司 A stripping process based on dry film patterning
CN119105238A (en)*2024-09-272024-12-10上海新微技术研发中心有限公司 A method for spin coating photoresist on high-step wafer and its application

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
孙世闯: "基于自支撑GaN衬底上垂直结构AlGaN/GaN CAVET MOCVD 外延生长及器件性能研究", 《中国博士学位论文全文数据库》, 15 October 2018 (2018-10-15)*
孙丽媛;高志远;邹德恕;张露;马莉;田亮;沈光地;: "多台阶器件结构深层表面光刻工艺优化", 物理学报, no. 20, 23 October 2012 (2012-10-23)*
肖国玲等: "《微电子制造工艺技术》", 30 September 2008, 西安电子科技大学出版社, pages: 125 - 136*

Also Published As

Publication numberPublication date
CN119542127B (en)2025-05-13

Similar Documents

PublicationPublication DateTitle
CN114300604B (en) A high-tolerance indium pillar for high-resolution Micro-LED microdisplay device and its preparation method
CN103325732B (en)A kind of COA substrate and manufacture method, display unit
CN111983893B (en)Gluing and photoetching method applied to wafer with steps on surface
CN109461652A (en)A method of it is abnormal to improve thick metal layers LIFT OFF technique figure
CN104627956B (en)A kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer
CN119542127B (en)Step structure surface graphical processing technology
CN116130355A (en)Process for manufacturing positive trapezoid glue shape by dry etching
WO2020124810A1 (en)Flexible display screen and manufacturing method therefor
CN118377200A (en)Post-exposure baking method for substrate with steps on surface
CN101132034A (en) A kind of method for preparing indium column
CN117111420A (en)Double-layer positive photoresist stripping method for preparing metal bumps
JP2007069098A (en)Vacuum drying method of coating film
JPH08334754A (en) Method for manufacturing electrode substrate for liquid crystal display device and liquid crystal display device using the same
JP2002231603A (en)Method of forming resist pattern and method of manufacturing active matrix substrate using the pattern
WO2020077799A1 (en)Oled display panel and preparation method therefor
CN112582568B (en)Display panel manufacturing method
CN117116947A (en)TFT substrate manufacturing method capable of enabling angle of metal layer to be gentle and TFT substrate
US20040170764A1 (en)Method for coating photoresist on a substrate
CN111620297B (en) A deep cavity etching method
CN107706149B (en)Manufacturing method of array substrate
JPH1116804A (en)Liquid treating method
JP4910237B2 (en) Method for manufacturing electrode substrate for color liquid crystal display device
CN119689783A (en) Glue coating product and table top glue coating method
CN117712264A (en) Graphical mass transfer method and system
CN115701252A (en)Preparation method of display panel, display panel and display panel production equipment

Legal Events

DateCodeTitleDescription
PB01Publication
PB01Publication
SE01Entry into force of request for substantive examination
SE01Entry into force of request for substantive examination
GR01Patent grant
GR01Patent grant

[8]ページ先頭

©2009-2025 Movatter.jp