Disclosure of Invention
The invention aims to provide a sensor of a light beam analyzer and a spectrometer, which can detect light beams with all wavelengths from ultraviolet to infrared bands, and greatly enhance the application range of equipment.
In order to achieve the above object, the present invention provides a sensor for a beam analyzer, comprising:
a pixel array structure;
A composite film disposed over the pixel array structure;
the composite film at least comprises a heat absorption film and a heat sensitive conductive film which are sequentially arranged from top to bottom;
the heat absorption film is used for absorbing incident light in a target wavelength range, converting the energy of the incident light into heat and causing the temperature change of the thermosensitive conductive film;
The thermosensitive conductive film is electrically connected with the pixel array structure and is used for converting temperature change of the thermosensitive conductive film into an electric signal and outputting the electric signal to the pixel array structure so as to obtain corresponding incident light intensity.
Further preferably, the liquid crystal display device further comprises a packaging shell with a sealing cavity and an electric connection channel, wherein the pixel array structure and the composite film are arranged in the sealing cavity;
the packaging window is arranged on the packaging shell and used for transmitting light rays of any two or more than two wave bands of visible light, near infrared, short wave infrared, medium wave infrared or long wave infrared wave bands.
Further preferably, the composite film is suspended above the pixel array structure by a supporting member, and a heat insulation space is formed between the composite film and the pixel array structure.
Further preferably, the pixel array structure comprises a substrate layer and sensing units which are distributed in an array mode and are arranged on the substrate layer, wherein one or more composite films are arranged on the corresponding sensing units and are electrically connected.
Further preferably, each sensing unit is provided with a supporting component for suspending and electrically connecting the composite film, wherein the supporting component comprises a positive electrode connecting component and a negative electrode connecting component.
Further preferably, the positive electrode connection member and the negative electrode connection member are respectively arranged at opposite ends of the induction unit, wherein the support part is an elongated beam member.
Further preferably, the suspended height between the composite film and the pixel array structure is 0-10 um.
Further preferably, the heat absorbing film comprises a conductive heat absorbing layer and a non-conductive heat absorbing layer which are sequentially overlapped from top to bottom, wherein the non-conductive heat absorbing layer is used for contacting the thermosensitive conductive film.
Further preferably, the material of the conductive heat absorbing layer is one or more than two of titanium nitride or titanium, and the non-conductive heat absorbing layer is one or more than two of silicon oxide or silicon nitride.
Further preferably, the heat absorbing film is made of one or more of doped amorphous silicon, vanadium oxide, titanium oxide or titanium.
Further preferably, the doped amorphous silicon is boron doped amorphous silicon.
Further preferably, the temperature coefficient of resistance of the thermosensitive conductive film is a positive temperature coefficient of resistance or a negative temperature coefficient of resistance.
Further preferably, the substrate layer comprises a reflecting film arranged above the substrate layer and used for reflecting at least part of the light beam transmitted through the composite film onto the composite film.
Further preferably, the air pressure in the cavity of the packaging shell is any one of 0.1 Pa-100 Pa, 100 Pa-100000 Pa, or 100000 Pa-1000000 Pa, or the cavity of the packaging shell is filled with gas, wherein the gas is inert gas or nitrogen.
Further preferably, the packaging window comprises a light-transmitting layer, wherein the light-transmitting layer is made of one or a combination of optical glass, sapphire, zinc selenide, zinc sulfide, barium fluoride, magnesium fluoride, calcium fluoride, silicon and germanium.
Further preferably, the packaging window further comprises a light filtering coating layer covered on the light transmission layer, wherein the light filtering coating layer is an antireflection film or a band-pass film;
and/or the light-transmitting layer is a neutral attenuation sheet.
The application also provides a light beam analyzer, which comprises the sensor of the light beam analyzer.
Compared with the prior art, the sensor, the light splitting device and the spectrum equipment of the light beam analyzer can detect light beams with all wavelengths from ultraviolet to infrared bands, and the application range of the equipment is greatly enlarged.
Detailed Description
The sensor of the beam analyser of the present invention will be described in more detail below in connection with a schematic diagram, in which preferred embodiments of the invention are shown, it being understood that the person skilled in the art can modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
Example 1
The present embodiment provides a sensor of a beam analyzer, as shown in fig. 1, which is mainly composed of a pixel array structure, a composite film 6 disposed above the pixel array structure, and the like.
As shown in fig. 1 and 2, the composite film 6 includes at least a heat absorbing film 61 and a heat sensitive conductive film 62 which are disposed in this order from top to bottom.
The heat absorbing film 61 is for absorbing the incident light 1 of a target wavelength range, converting the energy of the incident light 1 into heat and causing a temperature change of the thermosensitive conductive film 62.
The thermosensitive conductive film 62 is electrically connected to the pixel array structure and is used for converting its own temperature change into an electrical signal to be output to the pixel array structure, so as to obtain a corresponding incident light intensity.
The energy absorption of the light beams with different wave bands in the target wavelength range by the heat absorption film 61, for example, realizes the wide spectrum absorption response from ultraviolet to long wave infrared wave bands, namely, the light beam energy in all the above intervals can be absorbed by the heat absorption film 61 of the sensor, converted into heat and then output, and converted into corresponding electric signals, especially the light beams with all the wave bands from ultraviolet to infrared wave bands are detected, the application range of the device is greatly enhanced, and the subsequent signal analysis of the light beams with different wave bands in the target wavelength range is convenient, for example, the analysis of the light beams is not needed by adopting different light beam analyzers, and the like, so that the operation is convenient and the use cost is reduced.
Specifically, the sensor of the beam analyzer further comprises a package housing 3 having a sealed cavity and an electrical connection channel (electrical connection channel), wherein the pixel array structure and the composite film 6 are disposed in the sealed cavity.
Further preferably, the sensor of the beam analyzer further comprises a package window provided on the package housing 3. The packaging window is used for transmitting light rays of any two or more wave bands in visible light, near infrared, short wave infrared, medium wave infrared or long wave infrared wave bands. Therefore, the wide spectrum absorption response and analysis can be realized through the packaging window, so that the light beams with all wavelengths from ultraviolet to infrared can be detected, and the application range is greatly enhanced.
Further preferably, the composite film 6 is suspended above the pixel array structure by a supporting member, and a heat insulation space is formed between the composite film 6 and the pixel array structure.
Further preferably, the pixel array structure includes a substrate layer 5, sensing units 41 distributed in an array and disposed on the substrate layer 5, and the like. The plurality of composite films 6 are respectively arranged on the corresponding sensing units 41 and are electrically connected.
Further preferably, each sensing unit 41 is provided with a supporting member for suspending and electrically connecting the composite film 6. The support part comprises a positive electrode connecting member 7 and a negative electrode connecting member 8. The composite film 6 and the substrate layer 5 are suspended by the supporting component, so that thermal insulation between the composite film and the substrate can be realized, and the film is ensured to be sufficiently heated by heat converted from light beam energy and then converted into an electric signal for output. Wherein the support member may be composed of a conductive metal, such as a titanium alloy or a metal of silver, copper, or the like.
Further preferably, the suspension height between the composite film 6 and the pixel array structure is 0-10 um. Through this unsettled height, can be when realizing thermal-insulated between compound film 6 and the substrate layer 5, seal whole sensor chip in the cavity of low atmospheric pressure, can reduce unsettled film and substrate layer 5 and directly pass through the heat of air conduction, the less the atmospheric pressure in the cavity, the less the heat through the air conduction, the better the adiabatic of unsettled film promptly, the lower the sensitivity of sensor, can be through the sensitivity of adjustment encapsulation cavity atmospheric pressure regulation sensor, realize the measurement of different light beam energy ranges.
Further preferably, the heat absorbing film 61 is made of one or a combination of two or more of titanium nitride, titanium, silicon oxide, and silicon nitride.
Further preferably, as shown in fig. 3, the heat absorbing film 61 includes a conductive heat absorbing layer 611 and a non-conductive heat absorbing layer 612 which are sequentially stacked from top to bottom. Wherein the non-conductive heat sink layer 612 is configured to contact the thermally-sensitive conductive film 62. The conductive heat absorbing layer 611 is made of one or more of titanium nitride and titanium. The non-conductive heat sink 612 is a stacked combination of one or more of silicon oxide or silicon nitride. By the cooperation of the conductive heat sink 611 and the non-conductive heat sink 612, absorption of all wavelengths and part of the specific wavelengths can be achieved. Also, the conductive heat sink 611 and the nonconductive heat sink 612 may be plural and stacked alternately one on another in this order from top to bottom.
For example, the conductive heat sink 611 has a certain absorption (broad spectrum absorption) for all wavelengths of light, and its absorption spectrum is related to the conductivity of the material, the thickness of the film, and the like, and typically, the maximum absorption (about 50%) is achieved when the sheet resistance of the conductive heat sink 611 is 377 ohms. When the non-conductive heat absorbing layer 612 uses silicon oxide, silicon nitride, silicon, etc. as dielectric (insulating) materials, only light waves with specific wavelengths are absorbed, for example, silicon mainly absorbs ultraviolet, visible and near infrared bands, and silicon oxide and silicon nitride mainly absorb long-wave infrared bands.
As shown in fig. 4, in the present embodiment, the conductive heat absorbing layer 611a is formed of silicon oxide, the nonconductive heat absorbing layer 612a is formed of silicon, the conductive heat absorbing layer 611b is formed of silicon nitride, and the nonconductive heat absorbing layer 612b is formed of titanium nitride. The conductive heat absorbing layer 611a, the non-conductive heat absorbing layer 612a, the conductive heat absorbing layer 611b and the non-conductive heat absorbing layer 612b are sequentially stacked from top to bottom to form the composite film 6, so that a wide spectrum absorption response from ultraviolet to long wave infrared band can be realized through sequential and alternate matching of the conductive heat absorbing layers and the non-conductive heat absorbing layers, that is, all the light beam energy in the above regions can be absorbed by the heat absorbing film 61 of the sensor and converted into heat to be output.
Further preferably, the heat absorbing film 61 is made of one or a combination of two or more of doped amorphous silicon, vanadium oxide, titanium oxide, and titanium.
Further preferably, the doped amorphous silicon is boron doped amorphous silicon.
Further preferably, the temperature coefficient of resistance of the thermosensitive conductive film 62 is a positive temperature coefficient of resistance or a negative temperature coefficient of resistance.
For example, when the material of the thermosensitive conductive film 62 is one of doped amorphous silicon, vanadium oxide, and titanium oxide, such as boron doped amorphous silicon, the resistance thereof decreases (negative temperature coefficient of resistance) as the temperature of the material increases. When the material of the thermosensitive conductive film 62 is vanadium oxide or titanium oxide, the negative temperature coefficient of resistance is similar. The metal titanium is a thermosensitive material with positive resistance temperature absorption, and the resistance of the thermosensitive material rises along with the rising of the material temperature, so that the thermosensitive material with negative (or positive) resistance temperature absorption is used, and the change of the film temperature can be converted into an electric signal to be output by being matched with circuit signal processing, so that the corresponding light beam detection is realized.
Further preferably, the air pressure in the cavity of the packaging shell is 0.1 Pa-100 Pa or 100 Pa-100000 Pa, so that the heat conductivity between the pixel array structure, the thermosensitive conductive film and the substrate layer can be reduced under the condition of low vacuum degree or medium vacuum degree, namely, the heat conductivity is smaller, and the adjustment precision of the sensitivity of the sensor of the beam analyzer and the measurement of different beam energy ranges are improved. Obviously, the air pressure in the cavity of the packaging shell in the embodiment may be 100000pa to 1000000pa, so as to realize gas packaging under normal pressure, and reduce the packaging cost under the condition that the thermal conductivity is controlled in the target interval.
In addition, it should be noted that the air pressure in the cavity of the package housing in the present embodiment may be designed to be in a high vacuum or ultra-high vacuum state according to the actual requirement, for example, the air pressure in the cavity of the package housing is less than 0.1Pa.
In addition, as a preferred mode, the cavity of the packaging shell in the embodiment can be filled with gas, wherein the gas is inert gas or nitrogen, and the like, and compared with the mode of filling air, the heat conductivity coefficient between the pixel array structure, the thermosensitive conductive film and the substrate layer can be reduced better, so that the adjustment precision of the sensitivity of the sensor of the beam analyzer and the measurement of different beam energy ranges are improved.
Further preferably, the packaging window comprises a light-transmitting layer 2 in order to meet the design requirements in practical applications. Wherein the material of the light-transmitting layer 2 is one or a combination of optical glass, sapphire, zinc selenide, zinc sulfide, barium fluoride, magnesium fluoride, calcium fluoride, silicon and germanium. The packaging window can transmit multiple (two or more) regions in the spectral range of visible light, near infrared, short wave infrared, medium wave infrared and long wave infrared, and is used for sealing and protecting the sensor and selecting the spectral range required to be detected. Specifically, when the material of the sealing window is quartz glass, the light speed from ultraviolet to short wave infrared (300 nm-3000 nm) can be transmitted, and when the material of the sealing window is zinc selenide or zinc sulfide, the light beams in all wave bands from visible light to far infrared (500 nm-15000 nm) can be transmitted.
Further preferably, the light-transmitting layer 3 is a neutral attenuation sheet, so that light with a wavelength ranging from ultraviolet to infrared in a wide spectrum range can be uniformly attenuated, and the energy of an incident light beam can be controlled, so that measurement of different light beam energy ranges can be realized.
Example two
The present embodiment provides a sensor of a beam analyzer, which is substantially the same as the above embodiment, except that, as shown in fig. 5, the sensor of a beam analyzer further includes a reflective film 9 disposed above the substrate layer 5 for reflecting at least part of the light beam transmitted through the composite film 6 onto the composite film 6.
The light beam transmitted through the composite film is reflected back by the reflective film 9, increasing the heat absorption efficiency of the heat absorbing film in the composite film.
Further preferably, the reflective film 9 is provided on the upper surface of the reflective film 9 or the upper surface of the sensing unit 41.
Example III
The embodiment provides a sensor of a light beam analyzer, which is a further improvement of the above embodiment, and is characterized in that, as shown in fig. 6, the packaging window further comprises a filter coating layer 10 covered on the light-transmitting layer 2. Wherein the filter coating layer 10 is an antireflection film or a bandpass film. The optimal selection of the transparent spectrum can be realized through the antireflection film or the band-pass film.
Example IV
The present embodiment provides a sensor of a beam analyzer, which is substantially the same as any of the above embodiments, and is different in that at least one heat absorbing film 61 of the composite film 6 includes a conductive heat absorbing layer 611, at least a part of the heat absorbing film of the composite film is formed by a non-conductive heat absorbing layer 612, and the non-conductive heat absorbing layers 612 in the heat absorbing films are made of different materials.
The light waves with most wavelengths are absorbed to a certain extent through the conductive heat absorption layer, namely broad spectrum absorption and are converted into corresponding electric signals, and meanwhile, the non-conductive heat absorption layers made of different materials absorb different specific wavelengths and are converted into corresponding electric signals, so that collected electric signal data can be analyzed, different spectrums, especially electric signal identification of spectrums in different wave band intervals, can be identified, and therefore detection and identification of the broad spectrum can be achieved through one sensor, and detection cost is greatly reduced.
For example, the conductive heat sink layer of one of the composite films is composed of silicon nitride. Wherein the conductive heat-absorbing layer of one composite film is composed of titanium. Wherein the non-heat-absorbing layer of one composite film adopts quartz glass, the non-heat-absorbing layer of one composite film adopts zinc selenide, and the non-heat-absorbing layer of one composite film adopts silicon oxide.
Further preferably, the composite film formed by the non-heat-absorbing layers may be plural, and at least two materials are the same, and at least two materials are different, so that the same spectrum is checked by the non-heat-absorbing layers of the same material while the spectra of different wavelengths are identified.
In addition, through the difference analysis of the electric signal converted by the conductive heat absorption layer and the electric signal converted by the non-heat absorption layer, the specific wavelength which is not absorbed by the non-heat absorption layer can be identified, so that the cost is saved, and the process and the structure are simplified.
Example five
The present embodiment provides a sensor of a beam analyzer, which is substantially the same as any of the above embodiments, and is different in that, as shown in fig. 7, the composite film 6 is integrally covered on the upper side of each sensing unit 41, and forms corresponding electrical connection. The heat-sensitive conductive films 62 in the composite film are plural and are electrically connected with the corresponding sensing units 41, and two adjacent heat-sensitive conductive films 62 are arranged at intervals to avoid short circuit.
Further, the heat-sensitive conductive film 62 in this embodiment is also preferably arranged in an array, and is in one-to-one correspondence with the sensing units in an array.
Example six
The present embodiment provides a sensor of a beam analyzer, which is substantially the same as any of the above embodiments, and is different in that, as shown in fig. 8, a plurality of composite films 6 are provided, and independent closed spaces 51 are formed between each composite film 6 and the corresponding substrate layer 5 for filling gas, so as to independently realize adjustment of thermal conductivity coefficients between each composite film 6 and the corresponding substrate layer 5.
Specifically, after the substrate layer is provided with the corresponding grooves, the composite film 6 covers the substrate layer 5 and is filled with gas to form an independent closed space.
Further preferably, in order to facilitate the structural layout on the circuit of the substrate layer 5, the substrate layer 5 may be composed of a base layer 5a, a base layer 5b provided on the base layer 5a and provided with grooves for forming the closed space 51, and the like.
It should be noted that, in the present embodiment, the closed space 51 is also formed by providing a closed cavity structure between the composite film 6 and the corresponding substrate layer 5, for example, by providing a protrusion or a heat insulator on the substrate layer, which can form a cavity.
Example seven
The embodiment also provides a light beam analyzer, which comprises the sensor of the light beam analyzer in any embodiment.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.