CN119069611A - Light-emitting component and preparation method thereof, and display panel - Google Patents

Abstract

Translated fromChinese

本申请公开了一种发光组件及其制备方法、显示面板，涉及显示技术领域。该发光组件包括依次设置第一基板，发光单元，驱动单元以及引脚。发光单元和驱动单元连接，驱动单元和引脚连接，因此驱动单元可以通过引脚接收驱动信号，并控制发光单元发光。由于引脚远离驱动单元的一侧的端面为平面，因此引脚并不是采用电镀工艺或化学镀工艺制备得到的。由此可以无需在制备引脚时将整个组件放置于特定溶液中，进而也不会导致特定溶液浸入电极之间而导致电极连接发生损坏现象，能够保证发光组件的发光效果。

The present application discloses a light-emitting component and a preparation method thereof, and a display panel, and relates to the field of display technology. The light-emitting component includes a first substrate, a light-emitting unit, a driving unit, and a pin, which are arranged in sequence. The light-emitting unit is connected to the driving unit, and the driving unit is connected to the pin, so the driving unit can receive a driving signal through the pin and control the light-emitting unit to emit light. Since the end face of the pin away from the driving unit is a plane, the pin is not prepared by an electroplating process or a chemical plating process. Therefore, it is not necessary to place the entire component in a specific solution when preparing the pin, and the specific solution will not be immersed between the electrodes to cause damage to the electrode connection, and the light-emitting effect of the light-emitting component can be guaranteed.

Description

Light-emitting component, preparation method thereof and display panel

Technical Field

The application relates to the technical field of display, in particular to a light-emitting component, a preparation method thereof and a display panel.

Background

The display panel comprises a display backboard and a plurality of light-emitting assemblies connected with the display backboard, wherein the display backboard can provide driving signals for the light-emitting assemblies so that the light-emitting assemblies emit light to further realize display.

In the related art, a pin is arranged on one side, close to the display backboard, of the light-emitting assembly, and the pin is used for being connected with the display backboard, so that the display backboard provides driving signals for the light-emitting assembly through the pin, and the light-emitting assembly emits light under the driving of the driving signals. The process of preparing the pins includes placing the light emitting component, on which the pins have not been formed, in a specific solution, and forming the pins on one side of the light emitting component by an electroplating process or an electroless plating process.

However, since the preparation of the leads needs to be performed in a specific solution, the specific solution is easy to affect the mutual electrical connection of at least part of the electrodes in the light emitting component, and the product yield is affected.

Disclosure of Invention

The application provides a light-emitting component, a preparation method thereof and a display panel, which can solve the problem that the mutual electric connection of electrodes in the light-emitting component is influenced in the related art. The technical scheme is as follows:

in one aspect, a light emitting assembly is provided, comprising:

The light-emitting unit comprises a first electrode, a second electrode and a light-emitting part electrically connected with the first electrode and the second electrode respectively;

The driving unit comprises a third electrode, a fourth electrode and a driving circuit, wherein the third electrode and the fourth electrode are positioned on one side of the driving unit facing the light-emitting unit, the third electrode and the fourth electrode are respectively and electrically connected with the driving circuit, the third electrode and the first electrode are electrically connected, and the fourth electrode is electrically connected with the second electrode;

the first substrate is positioned at one side of the light-emitting unit far away from the driving unit;

And the pin is positioned at one side of the driving unit far away from the light-emitting unit, and is connected with the driving unit, and the end surface of one side of the pin far away from the driving unit is a plane.

Optionally, the driving unit includes a substrate, the driving circuit is located on one side of the substrate, and the substrate has a target surface far from one side of the driving circuit;

The pin is positioned on one side of the substrate far away from the driving unit, and the end face of one side of the pin far away from the substrate is parallel to the target surface.

Optionally, a distance between an end surface of the side of the pin away from the substrate and the target surface ranges from 15 micrometers to 25 micrometers.

Optionally, the driving unit includes a substrate having a target surface on a side remote from the driving circuit;

The shape of the part of the pin protruding out of the target surface is one of a prism, a prismatic table, a cylinder and a round table.

Optionally, the part of the pin protruding out of the target surface is in a prism shape, wherein the prism is provided with a top surface close to one side of the target surface and a bottom surface far away from one side of the target surface, and the bottom surface is the end surface;

the prism further has a plurality of rectangular sides, the relationship between the length W1 of a first side of the rectangular sides and the length H1 of a second side of the rectangular sides satisfying w1=k1×h1;

the value range of k1 is 1.5 to 2.5, the first side is the side of the rectangular side surface close to the top surface, and the second side is the side of the rectangular side surface between the top surface and the bottom surface.

Optionally, the part of the pin protruding out of the target surface is in the shape of a prismatic table, the prismatic table is provided with a top surface close to one side of the target surface and a bottom surface far from one side of the target surface, and the bottom surface is the end surface;

The prismatic table is also provided with a plurality of trapezoid side surfaces, and the relation between the length W2 of the upper bottom of the trapezoid side surfaces and the height H2 of the prismatic table is that W2=k2×H2 is satisfied;

The value range of k2 is 1.5 to 2.5, the length of the upper bottom of the trapezoid side surface is smaller than that of the lower bottom of the trapezoid side surface, and the height H2 of the terrace is equal to the distance between the top surface and the bottom surface.

Optionally, the area of the orthographic projection of the top surface on the substrate is smaller than the area of the orthographic projection of the bottom surface on the substrate, and the orthographic projection of the top surface on the substrate is located in the orthographic projection of the bottom surface on the substrate, and the upper bottom of the trapezoid side surface is closer to the substrate than the lower bottom of the trapezoid side surface;

The area of the orthographic projection of the top surface on the substrate is larger than the area of the orthographic projection of the bottom surface on the substrate, the orthographic projection of the bottom surface on the substrate is positioned in the orthographic projection of the top surface on the substrate, and the lower bottom of the trapezoid side surface is closer to the substrate than the upper bottom of the trapezoid side surface.

Optionally, the part of the pin protruding out of the target surface is in the shape of a cylinder, the cylinder is provided with a side surface, a top surface close to one side of the target surface and a bottom surface far away from one side of the target surface, and the bottom surface is the end surface;

The relation between the diameter W4 of the top or bottom surface and the height H4 of the cylinder satisfies that w4=k4×h4;

Wherein the value range of k4 is 1.5 to 2.5, and the height H4 of the cylinder is equal to the distance between the top surface and the bottom surface.

Optionally, the part of the pin protruding out of the target surface is in the shape of a round table, the round table is provided with a side surface, a top surface close to one side of the target surface and a bottom surface far away from one side of the target surface, and the bottom surface is the end surface;

The diameter of the top surface and the diameter of the bottom surface are different, and the relation between the smaller diameter W5 of the top surface and the bottom surface and the height H5 of the round table satisfies that W5=k5×H25;

The value range of k5 is 1.5 to 2.5, and the height H5 of the round table is equal to the distance between the top surface and the bottom surface.

Optionally, the area of the portion of the pin protruding from the target surface in a section parallel to the target surface increases with an increase in the distance between the section and the target surface.

Optionally, the first electrode and the second electrode are both positioned between the light emitting part and the driving circuit, and the materials of the first electrode and the second electrode comprise metal;

a partial region between the driving unit and the light emitting unit has a void, and the first electrode and the second electrode are both positioned within the void and in direct contact with the gas in the void.

Optionally, the light emitting assembly includes a plurality of light emitting units and the driving units corresponding to the plurality of light emitting units;

the plurality of light emitting units include a first color light emitting unit, a second color light emitting unit, and a third color light emitting unit, the first color, the second color, and the third color being different from each other.

Optionally, the light-emitting unit further comprises a color film layer, a color conversion layer and a light-emitting layer which are sequentially laminated along the direction far away from the first substrate, wherein the light-emitting color of the light-emitting layer is blue;

The light-emitting layer comprises a first doped layer, a multiple quantum well layer and a second doped layer which are arranged in a stacked mode, wherein the first doped layer is electrically connected with the first electrode, the second doped layer is electrically connected with the second electrode, and the light-emitting layer comprises a first light-emitting part, a second light-emitting part and a third light-emitting part.

Optionally, the driving unit further includes a connection structure, and the substrate included in the driving unit has a connection via, and the connection structure is located in the connection via;

The driving circuit is positioned on one side of the substrate, the driving circuit is connected with the connecting structure, and one side of the pin, which is close to the driving unit, is contacted with the connecting structure.

Optionally, the driving circuit includes a plurality of thin film transistors and at least one storage capacitor, each of the thin film transistors including a gate electrode, a source electrode and a drain electrode;

The pin is connected with the source electrode of one thin film transistor in the plurality of thin film transistors through the connection structure and is used for providing a data signal transmitted from a display backboard in the display panel for the driving circuit.

Optionally, the driving circuit comprises a buffer insulating layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer dielectric layer, a source drain layer and a flat layer which are positioned on one side of the substrate and are sequentially laminated;

the active layer includes a plurality of active patterns corresponding to the plurality of thin film transistors, each of the active patterns including a source region, a drain region, and a channel region;

the source electrode and the drain electrode of the thin film transistor are positioned on the source-drain electrode layer, the source electrode of the thin film transistor is connected with the source electrode area, and the drain electrode of the thin film transistor is connected with the drain electrode area;

The first gate layer includes a plurality of gate patterns corresponding to the plurality of thin film transistors, and the channel region is an overlapping region of an orthographic projection of the gate patterns on the substrate and an orthographic projection of the active patterns on the substrate.

In another aspect, a method of manufacturing a light emitting assembly is provided, the method comprising:

acquiring a first target structure, wherein the first target structure comprises a first substrate and a light-emitting unit positioned on one side of the first substrate, and the light-emitting unit comprises a first electrode, a second electrode and a light-emitting part electrically connected with the first electrode and the second electrode respectively;

the method comprises the steps of obtaining a second target structure, wherein the second target structure comprises a second substrate, an optical adhesive layer, a driving unit and a pin, wherein the optical adhesive layer is positioned on one side of the second substrate, the optical adhesive layer is provided with a through hole, the pin is positioned in the through hole and is connected with the driving unit, the driving unit comprises a third electrode, a fourth electrode and a driving circuit, and the third electrode and the fourth electrode are respectively and electrically connected with the driving circuit;

bonding the driving unit and the light emitting unit through a bonding process, wherein the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode;

And removing the second substrate and the optical adhesive layer from one side of the driving unit, so that the pins protrude out of one side of the driving unit away from the light-emitting unit, and the end surface of one side of the pins away from the driving unit is a plane.

Optionally, the thickness of the optical cement layer ranges from 15 micrometers to 25 micrometers.

In yet another aspect, there is provided a display panel including a display back plate, and a plurality of light emitting assemblies as described in the above aspect arranged in an array on one side of the display back plate;

the display backboard is used for providing driving signals for the driving unit through a plurality of pins in the light-emitting assembly so that the driving unit drives the light-emitting unit to emit light.

The technical scheme provided by the application has the beneficial effects that at least:

The application provides a light-emitting assembly, a preparation method thereof and a display panel. The light emitting unit is connected with the driving unit, and the driving unit is connected with the pins, so that the driving unit can receive driving signals through the pins and control the light emitting unit to emit light. Because the end face of the side of the pin, which is far away from the driving unit, is a plane, the pin is not prepared by adopting an electroplating process or an electroless plating process. Therefore, the whole assembly is not required to be placed in the specific solution when the pins are prepared, and the phenomenon that the electrode connection is damaged due to the fact that the specific solution is immersed between the electrodes is avoided, so that the luminous effect of the luminous assembly can be ensured.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a light emitting component according to an embodiment of the present application;

FIG. 2 is a schematic diagram of another light emitting device according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a pin according to an embodiment of the present application;

fig. 4 is a top view of a plurality of pins according to an embodiment of the present application;

Fig. 5 is a schematic structural diagram of another pin according to an embodiment of the present application;

FIG. 6 is a top view of another plurality of pins provided by an embodiment of the present application;

fig. 7 is a schematic structural diagram of another light emitting component according to an embodiment of the present application;

Fig. 8 is a schematic structural diagram of another pin according to an embodiment of the present application;

Fig. 9 is a top view of yet another plurality of pins provided by an embodiment of the present application;

fig. 10 is a schematic structural view of still another light emitting component according to an embodiment of the present application;

Fig. 11 is a schematic structural diagram of another pin according to an embodiment of the present application;

Fig. 12 is a top view of yet another plurality of pins provided in an embodiment of the present application;

fig. 13 is a schematic structural diagram of another pin according to an embodiment of the present application;

fig. 14 is a top view of yet another plurality of pins provided in an embodiment of the present application;

fig. 15 is a schematic structural diagram of another pin according to an embodiment of the present application;

Fig. 16 is a top view of yet another plurality of pins provided in an embodiment of the present application;

Fig. 17 is a schematic structural diagram of a first substrate and a light emitting unit according to an embodiment of the present application;

Fig. 18 is a schematic structural view of another first substrate and a light emitting unit according to an embodiment of the present application;

Fig. 19 is a schematic structural view of a driving unit according to an embodiment of the present application;

FIG. 20 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present application;

FIG. 21 is a flowchart of a method for acquiring a first target structure according to an embodiment of the present application;

FIG. 22 is a schematic diagram of forming a color film layer and a color conversion layer according to an embodiment of the present application;

FIG. 23 is a schematic illustration of forming an adhesive layer and a buffer layer according to an embodiment of the present application;

FIG. 24 is a schematic illustration of forming a first doped layer, a multiple quantum well layer, a second doped layer and a conductive layer according to an embodiment of the present application;

FIG. 25 is a schematic illustration of a raised electrode formation according to an embodiment of the present application;

FIG. 26 is a schematic illustration of an insulating layer formed according to an embodiment of the present application;

FIG. 27 is a schematic view of a second target structure according to an embodiment of the present application;

FIG. 28 is a flowchart of a method for obtaining a second target structure according to an embodiment of the present application;

FIG. 29 is a schematic illustration of forming an optical cement layer according to an embodiment of the present application;

FIG. 30 is a schematic diagram of forming a conductive material in a via of an optical glue layer according to an embodiment of the present application;

FIG. 31 is a schematic view of a substrate and buffer insulating layer formed according to an embodiment of the present application;

FIG. 32 is a schematic illustration of a conductive material formed in a via of a substrate and a buffer insulating layer according to an embodiment of the present application;

FIG. 33 is a schematic diagram of forming an active layer, a first gate insulating layer, a gate layer, an interlayer dielectric layer, a source/drain layer and a planarization layer according to an embodiment of the present application;

fig. 34 is a schematic diagram of a bonding connection between a driving unit and a light emitting unit according to an embodiment of the present application;

FIG. 35 is a schematic view of a second substrate removed from one side of an optical adhesive layer according to an embodiment of the present application;

FIG. 36 is a schematic view of removing a second substrate by laser lift-off according to an embodiment of the present application;

FIG. 37 is a schematic view of removing a second substrate by chemical etching according to an embodiment of the present application;

FIG. 38 is a schematic diagram of an embodiment of the present application for removing an optical adhesive layer from one side of a driving circuit;

FIG. 39 is a schematic diagram of a plurality of light emitting units included in a plurality of light emitting assemblies according to an embodiment of the present application;

FIG. 40 is a schematic diagram of a driving unit included in a plurality of light emitting assemblies according to an embodiment of the present application;

FIG. 41 is a schematic diagram of a bonding connection of a plurality of light emitting units and a driving unit provided by an embodiment of the present application;

fig. 42 is a schematic structural diagram of a display panel according to an embodiment of the present application;

fig. 43 is a top view of a display panel according to an embodiment of the present application.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail with reference to the accompanying drawings.

A Micro light emitting diode (Micro LIGHT EMITTING diode) display panel generally includes a display back plate, a driving unit integrally provided on the display back plate, and a light emitting chip bonded to the driving unit. In preparing the Micro LED display panel, in order to realize color display, it is necessary to transfer and bond light emitting chips of different colors onto a display back plate integrated with a driving unit, and the light emitting chips of the same color are transferred at the same time, and the light emitting chips of different colors are transferred in multiple times. That is, the number of transitions is the number of colors of the light emitting chip. Alternatively, the light emitting chips include three color light emitting chips, such as a red (R) light emitting chip, a green (G) light emitting chip, and a blue (blue) light emitting chip, and three transfers are required. The transfer times are more when the Micro LED display panel is prepared by the scheme, and the process is more complicated.

In addition, in order to reduce the manufacturing cost of the Micro LED display panel, the size of the display back plate cannot be designed to be too large (because the design is too large, if some of the light emitting chips fail to emit light after transfer, the whole product is scrapped, and the cost is high). Therefore, if large-size display is required, the scheme can be realized only by splicing, and the display effect is poor.

For red, green and blue Micro display chips (RGB Micro LEDs) are bonded with a driving unit to form a new Active-matrix light-emitting diode (AM-LED) chip with a driving circuit. The AM-LED chip comprises a light-emitting chip with three colors of red, green and blue, and a driving unit for driving the light-emitting chip. Furthermore, how large a display panel is to be manufactured, and a corresponding number of AM-LED chips are used to perform one-time transfer bonding with a display back plate, so as to manufacture a glass-based color light-emitting diode (LED) display panel member. Meanwhile, the scheme can only need to carry out one-time transfer process, and the process is simpler. And moreover, large-size display can be realized without splicing, and the glass utilization rate of the display backboard can be improved, so that cost reduction is realized.

And the AM-LED chip can realize electric/optical double detection by a detection technology, and the chips with the optical performance and the driving performance meeting the requirements are screened out. Therefore, compared with the scheme that the driving circuit is integrated on the display backboard to form the display panel, the method is more beneficial to improving the yield of chips on the display panel and is also convenient for repairing and replacing bad chips.

However, the AM-LED chip needs to be fabricated with a lead (Bump) for bonding connection on the AM-LED chip before bonding with the display back plate, and the lead preparation usually adopts an electroplating process or an electroless plating process. When the pins are prepared in the electroplating process or the electroless plating process, the AM-LED chip needs to be placed in a specific solution, and because the electrodes after the AM-LED chip and the driving unit are connected in a bonding way are contacted with the solution, short circuits, open circuits or device failure may be caused.

Fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present application. Referring to fig. 1, the light emitting assembly 10 includes a light emitting unit 101, a driving unit 102, a first substrate 103, and pins 104.

The light emitting unit 101 includes a first electrode 1011, a second electrode 1012, and a light emitting part 1013 electrically connected to the first electrode 1011 and the second electrode 1012.

The driving unit 102 includes a third electrode 1021, a fourth electrode 1022, and a driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are both located on the side of the driving unit 102 facing the light emitting unit 101, i.e., the third electrode 1021 and the fourth electrode 1022 are closer to the light emitting unit 101 than the driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are electrically connected to the driving circuit 1023, respectively, the third electrode 1021 and the first electrode 1011 are electrically connected, and the fourth electrode 1022 and the second electrode 1012 are electrically connected.

The first substrate 103 is located at a side of the light emitting unit 101 remote from the driving unit 102, i.e., the light emitting unit 101 is closer to the first substrate 103 than the driving unit 102. The first substrate 103 may be a substrate carrying the light emitting unit 101.

The lead 104 is located at a side of the driving unit 102 away from the light emitting unit 101, and the lead 104 is connected with the driving unit 102, and an end surface m of the side of the lead 104 away from the driving unit 102 is a plane.

In the embodiment of the present application, the end surface m of the side of the lead 104 away from the driving unit 102 is a plane, so the lead 104 is not prepared by electroplating or electroless plating. Therefore, the whole assembly is not required to be placed in a specific solution when the pins 104 are prepared, and the phenomenon that the electrode connection is damaged due to the fact that the specific solution is immersed between the electrodes is avoided, so that the light emitting effect of the light emitting assembly 10 can be ensured.

Alternatively, the fabrication process of the leads 104 may include etching an optical cement (PR) layer (the optical cement layer is located on the side of the driving unit 102 away from the light emitting unit 101) to form a via, depositing a conductive material (e.g., metal) in the via, and removing the optical cement layer to obtain the leads 104 that are located on the side of the driving unit 102 away from the light emitting unit 101 and protrude from the surface of the driving unit 102. The pin 104 prepared by the method is mainly characterized in that the end surface of one side of the pin 104 away from the driving unit 102 is a plane.

In the embodiment of the present application, the pin 104 included in the light emitting assembly 10 may be used for receiving a driving signal provided by the display back panel, so that the pin 104 may provide a driving signal for the driving unit 102, and the driving unit 102 may drive the light emitting unit 101 to emit light.

In summary, the embodiment of the application provides a light emitting assembly, which includes a first substrate, a light emitting unit, a driving unit and pins sequentially disposed. The light emitting unit is connected with the driving unit, and the driving unit is connected with the pins, so that the driving unit can receive driving signals through the pins and control the light emitting unit to emit light. Because the end face of the side of the pin, which is far away from the driving unit, is a plane, the pin is not prepared by adopting an electroplating process or an electroless plating process. Therefore, the whole assembly is not required to be placed in the specific solution when the pins are prepared, and the phenomenon that the electrode connection is damaged due to the fact that the specific solution is immersed between the electrodes is avoided, so that the luminous effect of the luminous assembly can be ensured.

In an embodiment of the present application, the material of the pins 104 may comprise a conductive material, including, for example, a metal. The material of the pins 104 may include copper (Cu), among others. And the pins 104 are prepared by punching the photoresist layer, and forming conductive material in the vias of the photoresist layer, where the conductive material forms the pins 104 included in the light emitting device 10. The method can solve the problems of electrode connection damage or device failure caused by the immersion of the solution into the electrode because the whole assembly does not need to be placed in a specific solution.

In an embodiment of the present application, referring to fig. 2, the driving unit 102 includes a substrate 1024, and the driving circuit 1023 is located at one side of the substrate 1024. The substrate 1024 has a target surface 1024a on a side remote from the drive circuit 1023. The leads 104 are located on a side of the substrate 1024 away from the driving unit 102, and an end face of the side of the leads 104 away from the substrate 1024 is parallel to the target surface 1024a.

Alternatively, parallelism may be used to indicate perfect parallelism as well as substantially parallelism due to process errors. For example, "substantially" means that a certain range of error may be allowed, and that the two surfaces are substantially parallel may be such that the angle between the two surfaces is between 0 degrees and 10 degrees.

In an embodiment of the application, the driving unit 102 comprises a substrate 1024, the substrate 1024 having a target surface 1024a at a side remote from the light emitting unit 101. The portion of the lead 104 protruding from the target surface 1024a is one of a prism, a prism table, a cylinder and a truncated cone. The shape of the portion of pin 104 protruding from target surface 1024a is related to the shape of the via etched in the optical glue layer and the accuracy of the etching process.

In the embodiment of the application, the light emitting component 10 may generate a certain amount of heat during the light emitting process, and a part of the surface of the pin 104 is exposed, so that a certain heat dissipation effect can be achieved.

Optionally, the light emitting assembly 10 may generate heat convection with a medium in the external environment during heat dissipation. The greater the heat transfer amount of the heat convection of the light emitting assembly 10 with respect to the external environment (the medium in the external environment is typically air), the better the heat dissipation effect. Wherein, the heat transfer quantity q of the heat convection satisfies:

q=h× (T1-T2) ×s formula (1)

Wherein h is the heat transfer coefficient of the medium in the external environment, T1 is the internal temperature of the light-emitting component 10, T2 is the temperature of the external environment, and S is the contact area between the light-emitting component 10 and the external environment. If the medium in the external environment is air, the heat transfer coefficient h=5w/(m² ·k) (watts/(square meter·kelvin)).

Referring to the above formula (1), it can be seen that the heat transfer amount q of the thermal convection is positively correlated with the contact area S, and thus the contact area S can be increased as much as possible in order to improve the heat dissipation effect of the light emitting assembly 10.

As an alternative implementation, referring to fig. 3, the portion of pin 104 protruding from target surface 1024a is shaped as a prism (e.g., a quadrangular prism). The prism has a top surface m2 on a side close to the target surface 1024a and a bottom surface m1 on a side away from the target surface 1024a, where the bottom surface m1 is an end surface m1 of the lead 104 on a side away from the substrate 1024. The prism also has a plurality of rectangular sides m3. A prism may be understood as a rectangle in shape in cross-section through a central axis of the prism, the central axis being perpendicular to the target surface 1024a of the substrate 1024.

In the embodiment of the present application, the relationship between the length W1 of the first side of the rectangular side surface m3 and the length H1 of the second side of the rectangular side surface m3 satisfies w1=k1×h1. The length W1 of the first side of the rectangular side surface m3 may be the length and the width of the lead 104 (prism), and the length H1 of the second side of the rectangular side surface m3 may be the height of the lead 104 (prism). That is, the length (or width) W of the pin 104 is proportional to the height H1 of the pin 104. Alternatively, k1 has a value in the range of 1.5 to 2.5.

Referring to fig. 4, taking an example in which the light emitting assembly 10 includes 9 pins 104, it is determined that the contact area S1 of the light emitting assembly 10 satisfies:

s1=l²-W1² X9+4 XH 1 XW 1X 9 formula (2)

Where L in the above formula (2) is the length and width of the light emitting component 10, W1 is the length and width of the lead 104 (prism), and H1 is the height of the lead 104 (prism). L² is used to represent the area of the light-emitting component 10, W1² is used to represent the area of the top surface m2 or the bottom surface m1 of each of the pins 104, 4×h1×w1 is used to represent the sum of the areas of the 4 rectangular side surfaces m3 of each of the lands, and 4×h1×w1×9 is used to represent the sum of the areas of the 4 rectangular side surfaces m3 of the 9 lands.

The deformation according to the above formula (2) results in:

s1=l²-9×(W1-2×H1)²+4×H1² × formula 9 (3)

As can be seen from equation (3), the larger the height H1 of the pin 104 (prism), the larger the contact area S1, and the largest the contact area S, the best the heat dissipation when w1=2×h1 (i.e., k1=2). Thus, in order to make the contact area S1 as large as possible, the condition that w1=k1×h1, k1=2 needs to be satisfied. Namely, the following conditions are satisfied: w1=2×h1. Further, since the difference between each value in the value range of k1 and the value (k1=2) having the best heat radiation effect is not large, a certain heat radiation effect can be achieved even for each value in the value range of k 1.

It should be noted that the height H1 of the lead 104 depends on the thickness of the optical adhesive layer (the height H1 of the lead 104 is equal to the thickness of the optical adhesive layer), and the thicker the thickness of the optical adhesive layer, the better the supporting performance of other structures in the light emitting assembly 10. But generally due to process capability limitations, the thickness of the optical cement layer cannot be made too thick.

And, the pressure P borne by the substrate 1024 in the driving unit 102 is satisfied that p=f/M, where F is the force applied to the substrate 1024 by other structures in the light emitting assembly 10, and M is the contact area between the lead 104 and the substrate 1024, i.e. the area of the top surface M2 of the lead 104. Wherein, m=9×w1². As can be seen from the pressure P formula, the pressure P experienced by the substrate 1024 is greater when the length and width W1 of the pins 104 (prisms) are smaller. That is, a smaller length and width W1 of the pins 104 (prisms) necessarily results in a pressure increase experienced by the substrate 1024. The greater the length and width W1 of the pins 104 (prisms) necessarily results in a decrease in the pressure experienced by the substrate 1024.

Thus, in order to reduce the pressure, the length and width W1 of the pin 104 (prism) may be increased as much as possible. But ensuring that the pins 104 are able to accurately transmit signals requires some clearance between adjacent pins 104. For example, the gap between adjacent pins 104 needs to be greater than 10 μm.

Taking the length and width L of the light emitting assemblies 10 as 200 μm (micrometers), each light emitting assembly 10 includes 9 pins 104 arranged in 3 rows and 3 columns as an example, and the length and width W1 of the pins 104 ranges from 30 μm to 50 μm. In the case where the length and width of the leads 104 are both 50 μm, the distance between adjacent leads 104 is (200-3×50)/(4=12.5 μm). That is, the distance is more than 10 μm, and the reliability of the signal transmission by the pins 104 can be ensured.

In addition, in order to make the contact area S1 as large as possible, the height h1=w1/2 of the pin 104, i.e., the height H1 of the pin 104 may be in the range of 15 μm to 25 μm. The height H1 of the lead 104 is equal to the distance between the top surface m2 and the bottom surface m1 of the lead 104, i.e., the distance between the end surface of the lead 104 on the side away from the substrate 1024 and the target surface 1024 a.

In the embodiment of the present application, W1 may also be the length of the first side of the rectangular side m3 of the prism, and H1 may also be the length of the second side of the rectangular side m3 of the prism. The first side is a side of the rectangular side surface m3 near the top surface m2, and the second side is a side of the rectangular side surface m3 between the top surface m2 and the bottom surface m 1.

As a second alternative implementation, referring to fig. 5, the portion of pin 104 protruding from target surface 1024a is shaped as a pyramid (e.g., a quadrangular pyramid). The land has a top surface m2 on a side close to the target surface 1024a and a bottom surface m1 on a side away from the target surface 1024a, where the bottom surface m1 is the end surface m1 of the lead 104 on a side away from the substrate 1024. The land also has a plurality of trapezoidal sides m3. A land may be understood as a trapezoid in shape in cross-section parallel to the central axis of the prism, the central axis being perpendicular to the target surface 1024a of the substrate 1024.

In the embodiment of the present application, the relationship between the length W2 of the upper bottom of the trapezoidal side surface m3 and the height H2 of the land satisfies w2=k2×h2. Wherein, the length of the upper bottom of the trapezoid side surface m3 is smaller than the length of the lower bottom of the trapezoid side surface, and the height H2 of the prismatic table is equal to the distance between the top surface m2 and the bottom surface m 1. That is, the length W2 of the upper bottom of the pin 104 is proportional to the height H2 of the land. Alternatively, k2 has a value in the range of 1.5 to 2.5.

Referring to fig. 6, taking an example in which the light emitting assembly 10 includes 9 pins 104, it is determined that the contact area S2 of the light emitting assembly 10 satisfies:

S2=l²-Wj² × 9+4 XHt× (W2+W3)/2×9 formula (4)

Where L in the above formula (4) is the length and width of the light emitting device 10, wj is the length and width of the top surface m2 of the lead 104 (the land), and Ht is the height of the trapezoid side surface m3 (not the height of the lead 104). W2 is the length of the upper base of the trapezoidal side m3, W3 is the length of the lower base of the trapezoidal side m3, and W2< W3.L² is used to represent the area of the light-emitting element 10, wj² is used to represent the area of the top surface m2 of each lead 104, ht× (w2+w3)/2 is used to represent the area of one trapezoidal side surface m3, 4×ht× (w2+w3)/2 is used to represent the sum of the areas of the 4 trapezoidal side surfaces m3 of each land, and 4×ht× (w2+w3)/2×9 is used to represent the sum of the areas of the 4 trapezoidal side surfaces m3 of 9 lands.

In this embodiment, in order to simplify the manufacturing process, the conditions are w2=k2×h2, k2=2. Namely, the following conditions are satisfied: w2=2×h2. H2 is the height of the pins 104 (lands). That is, when the portion of the lead 104 protruding from the target surface 1024a is in the shape of a pyramid, the height design of the lead 104 can be identical to that when the shape is a prism. Further, since the difference between each value in the k2 value range and the value (k2=2) having the best heat radiation effect is not large, a certain heat radiation effect can be achieved even for each value in the k2 value range.

In one version (orthotrapezoidal design), referring to fig. 5-7, the area of orthographic projection of top surface m2 onto substrate 1024 is smaller than the area of orthographic projection of bottom surface m1 onto substrate 1024. And, the orthographic projection of the top surface m2 onto the substrate 1024 is located within the orthographic projection of the bottom surface m1 onto the substrate 1024. The upper base of the trapezoidal side m3 of the mesa is closer to the substrate 1024 than the lower base of the trapezoidal side m3. That is, the upper bottom of the trapezoidal side surface m3 of the pyramid is equal to the length or width of the top surface m2 of the pyramid, and the lower bottom of the trapezoidal side surface m3 of the pyramid is equal to the length or width of the bottom surface m1 of the pyramid.

Assuming that the area Wj²(W2² of the top surface m2 of the land is the same as the area W1² of the top surface m2 or the bottom surface m1 of the prism in the first implementation described above, the pressure to which the substrate 1024 in the case of the land is subjected is the same as the pressure to which the substrate 1024 in the case of the prism is subjected. Moreover, as can be seen from the formula (2) and the formula (4), the contact area S2 of the prismatic table scheme is larger than the contact area S1 of the prismatic scheme, and the heat dissipation effect is better.

Scheme two (inverted trapezoidal design), referring to fig. 8-10, the area of orthographic projection of top surface m2 onto substrate 1024 is greater than the area of orthographic projection of bottom surface m1 onto substrate 1024. And, the orthographic projection of the bottom surface m1 onto the substrate 1024 is located within the orthographic projection of the top surface m2 onto the substrate 1024. The upper base of the trapezoidal side m3 of the mesa is further from the substrate 1024 than the lower base of the trapezoidal side m 3. That is, the upper bottom of the trapezoidal side surface m3 of the pyramid is equal to the length or width of the bottom surface m1 of the pyramid, and the lower bottom of the trapezoidal side surface m3 of the pyramid is equal to the length or width of the top surface m2 of the pyramid.

Assuming that the area W2² of the bottom surface M1 of the land is the same as the area W1² of the top surface M2 or the bottom surface M1 of the prism in the first implementation described above, the pressure to which the substrate 1024 in the case of the land is subjected is smaller than the pressure to which the substrate 1024 in the case of the prism is subjected (because the contact area m=w3² of the land and the substrate 1024 is larger than the contact area m=w1² of the prism and the substrate 1024). Moreover, as can be seen from the formula (2) and the formula (4), the contact area S2 of the prismatic table scheme is larger than the contact area S1 of the prismatic scheme, and the heat dissipation effect is better.

It should be noted that, in the second scheme (inverted trapezoidal design), the area of the top surface m2 of the land is larger than that of the first scheme (positive trapezoidal design), so that the gap between the adjacent pins 104 is smaller. Thus, there may be a risk that adjacent pins 104 are in direct contact due to the smaller distance, as compared to solution two (inverted trapezoidal design) versus solution one (positive trapezoidal design). But only to ensure that the gap between adjacent pins 104 is greater than the required gap, e.g., greater than 10 μm.

As a third alternative implementation, referring to fig. 11, the portion of pin 104 protruding from target surface 1024a is cylindrical in shape. The cylinder has a side surface m3, a top surface m2 on a side close to the target surface 1024a, and a bottom surface m1 on a side away from the target surface 1024a, the bottom surface m1 being an end surface of the lead 104 on a side away from the substrate 1024. A cylinder may be understood as having a circular shape in any cross-section parallel to the target surface 1024a, and a rectangular shape in cross-section through a central axis of the cylinder, the central axis being perpendicular to the target surface 1024a.

In the embodiment of the present application, the relationship between the diameter W4 of the top surface m2 or the bottom surface m1 of the cylinder and the height H4 of the cylinder satisfies that w4=k4×h4. Wherein the height H4 of the cylinder is equal to the distance between the top surface m2 and the bottom surface m 1. That is, the diameter of the top surface m2 or the bottom surface m1 of the lead 104 is proportional to the height H4 of the lead 104. Alternatively, k4 has a value in the range of 1.5 to 2.5.

Referring to fig. 12, taking an example in which the light emitting assembly 10 includes 9 pins 104, it is determined that the contact area S3 of the light emitting assembly 10 satisfies:

S3=l²-π/4×W4² x9+pi.times.W 4 XH 4X 9 formula (5)

Wherein L in the above formula (5) is the length and width of the light emitting device 10, W4 is the diameter of the top surface m2 or the bottom surface m1 of the lead 104 (cylinder), and H4 is the height of the lead 104 (cylinder). L² is used to represent the area of the light emitting assembly 10, pi/4 XW 4² is used to represent the area of the top surface m2 or the bottom surface m1 of each of the leads 104, pi/4 XW 4² X9 is used to represent the sum of the areas of the top surfaces m2 or the bottom surfaces m1 of the 9 leads 104, pi XW 4 XH 4 is used to represent the area of the side surfaces m3 of each of the leads 104, and pi XW 4 XH 4X 9 is used to represent the sum of the areas of the side surfaces m3 of the 9 leads 104.

The deformation according to the above formula (5) results in:

S3=l²-π/4×9(W4-2×H4)²+π×H4² × formula 9 (6)

As can be seen from equation (6), the larger the height H4 of the pin 104 (cylinder), the larger the contact area S3, and the largest the contact area S, the best the heat dissipation when w4=2×h4 (i.e., k4=2). Thus, in order to make the contact area S1 as large as possible, the condition that w4=k4×h4, k4=2 needs to be satisfied. Namely, the following conditions are satisfied: w4=2×h4. Further, since the difference between each value in the k4 value range and the value (k4=2) having the best heat radiation effect is not large, a certain heat radiation effect can be achieved even for each value in the k4 value range.

It should be noted that the height H4 of the lead 104 depends on the thickness of the optical adhesive layer (the height H4 of the lead 104 is equal to the thickness of the optical adhesive layer), and the thicker the thickness of the optical adhesive layer, the better the supporting performance of other structures in the light emitting assembly 10. But generally due to process capability limitations, the thickness of the optical cement layer cannot be made too thick.

And, the pressure P borne by the substrate 1024 in the driving unit 102 is satisfied that p=f/M, where F is the force applied to the substrate 1024 by other structures in the light emitting assembly 10, and M is the contact area between the lead 104 and the substrate 1024, i.e. the area of the top surface M2 of the lead 104. Where m=9×w4²/4. As can be seen from the pressure P equation, the pressure P experienced by the substrate 1024 is greater when the diameter W4 of the pin 104 (cylinder) is smaller. That is, the smaller the diameter W4 of the pin 104 (cylinder) necessarily results in a pressure rise experienced by the substrate 1024. The greater the length and width W4 of the pins 104 (cylinders) necessarily results in a decrease in the pressure experienced by the substrate 1024.

Thus, in order to reduce the pressure, the diameter W4 of the pin 104 (cylinder) may be increased as much as possible. But ensuring that the pins 104 are able to accurately transmit signals requires some clearance between adjacent pins 104. For example, the gap between adjacent pins 104 needs to be greater than 10 μm.

Taking the length and width L of the light emitting assemblies 10 as 200 μm (micrometers), each light emitting assembly 10 includes 9 pins 104 arranged in 3 rows and 3 columns as an example, and the diameter W4 of the pins 104 ranges from 30 μm to 50 μm. In the case where the diameter of the leads 104 is 50 μm, the distance between adjacent leads 104 is (200-3×50)/(4=12.5 μm). That is, the distance is more than 10 μm, and the reliability of the signal transmission by the pins 104 can be ensured.

In addition, in order to make the contact area S3 as large as possible, the height h4=w4/2 of the pin 104, i.e., the height H4 of the pin 104 may be in the range of 15 μm to 25 μm. The height H4 of the lead 104 is equal to the distance between the top surface m2 and the bottom surface m1 of the lead 104, i.e., the distance between the end surface of the lead 104 on the side away from the substrate 1024 and the target surface 1024 a.

As a fourth alternative implementation, referring to fig. 13, the portion of pin 104 protruding from target surface 1024a is shaped as a truncated cone. The truncated cone has a side surface m3, a top surface m2 on a side close to the target surface 1024a, and a bottom surface m1 on a side far from the target surface 1024a, where the bottom surface m1 is an end surface of the lead 104 on a side far from the substrate 1024. The circular table may be understood as having a circular shape in any cross-section parallel to the target surface 1024a, and a trapezoid shape in cross-section passing through a central axis of the circular table, the central axis being perpendicular to the target surface 1024a.

In the embodiment of the application, the top surface m2 and the diameter of the round table are different from the diameter of the bottom surface m1, and the relation between the smaller diameter W5 of the top surface m2 and the bottom surface m1 and the height H5 of the round table satisfies that W5=k5×H25. Wherein, the height H5 of the round platform is equal to the distance between the top surface m2 and the bottom surface m 1. That is, the smaller diameter W5 of the top surface m2 and the bottom surface m1 of the pin 104 is proportional to the height H5 of the land. Alternatively, k5 has a value in the range of 1.5 to 2.5.

Referring to fig. 14, taking an example in which the light emitting assembly 10 includes 9 pins 104, it is determined that the contact area S4 of the light emitting assembly 10 satisfies:

S4=l²-π/4×Wi² ×9 +pi×Hax% W5+W6)/2×9 equation (7)

Where L in the above formula (7) is the length and width of the light emitting device 10, wi is the diameter of the top surface m2 of the lead 104 (truncated cone), and Ha is the height of the side surface m3 (not the height of the lead 104). W5 is the diameter of the upper bottom of the circular table, W6 is the diameter of the lower bottom of the circular table, and W5 is less than W6.L² is used to represent the area of the light emitting element 10, pi/4 Xwi² is used to represent the area of the top surface m2 of each lead 104, pi/4 Xwi² X9 is used to represent the area of the top surface m2 of 9 leads 104, pi XHax (W5+W6)/2 is used to represent the area of the side surface m3 of one circular truncated cone, pi XHax (W5+W6)/2X 9 is used to represent the sum of the areas of the side surfaces m3 of 9 circular truncated cones.

In this embodiment, in order to simplify the manufacturing process, the condition is w5=k5×h5, k5=2. Namely, the following conditions are satisfied: w5=2×h5. H5 is the height of the pins 104 (circular truncated cone). That is, when the portion of the lead 104 protruding from the target surface 1024a is in the shape of a truncated cone, the height design of the lead 104 can be identical to that when the shape is a cylinder. Further, since the difference between each value in the k5 value range and the value (k5=2) having the best heat radiation effect is not large, a certain heat radiation effect can be achieved even for each value in the k2 value range.

In one aspect (right circular table design), referring to fig. 13 and 14, the area of the front projection of the top surface m2 onto the substrate 1024 is smaller than the area of the front projection of the bottom surface m1 onto the substrate 1024. And, the orthographic projection of the top surface m2 onto the substrate 1024 is located within the orthographic projection of the bottom surface m1 onto the substrate 1024. The upper bottom of the circular truncated cone is closer to the substrate 1024 than the lower bottom of the circular truncated cone, and the area of the upper bottom of the circular truncated cone is smaller than the area of the lower bottom of the circular truncated cone. That is, the diameter of the upper bottom of the round table is equal to the diameter of the top surface m2 of the round table, and the diameter of the lower bottom of the round table is equal to the diameter of the bottom surface m1 of the round table.

Assuming that the area pi/4 xwi²(π/4×W5² of the top surface m2 of the circular truncated cone is the same as the area pi/4 xw 4² of the top surface m2 or the bottom surface m1 of the cylinder in the above third implementation, the pressure born by the substrate 1024 in the case of the circular truncated cone is the same as the pressure born by the substrate 1024 in the case of the cylinder. Moreover, as can be seen from the formula (5) and the formula (7), the contact area S4 of the circular table scheme is larger than the contact area S3 of the cylindrical scheme, and the heat dissipation effect is better.

Scheme two (inverted circular truncated cone design), referring to fig. 15 and 16, the area of the orthographic projection of top surface m2 onto substrate 1024 is larger than the area of the orthographic projection of bottom surface m1 onto substrate 1024. And, the orthographic projection of the bottom surface m1 onto the substrate 1024 is located within the orthographic projection of the top surface m2 onto the substrate 1024. The upper base of the circular table is further from the substrate 1024 than the lower base of the circular table. That is, the diameter of the upper bottom of the round table is equal to the diameter of the bottom surface m1 of the round table, and the diameter of the lower bottom of the round table is equal to the diameter of the top surface m2 of the round table.

Assuming that the area pi/4×w5² of the bottom surface M1 of the circular truncated cone is the same as the area pi/4×w4² of the top surface M2 or the bottom surface M1 of the cylinder in the above third implementation, the pressure to which the substrate 1024 in the case of the circular truncated cone is subjected is smaller than the pressure to which the substrate 1024 in the case of the cylinder is subjected (because the contact area m=pi/4×w6² of the circular truncated cone and the substrate 1024 is larger than the contact area m=pi/4×w4² of the cylinder and the substrate 1024). Moreover, as can be seen from the formula (5) and the formula (7), the contact area S4 of the circular table scheme is larger than the contact area S3 of the cylindrical scheme, and the heat dissipation effect is better.

It should be noted that, in the second embodiment (the inverted circular table design), the area of the top surface m2 of the circular table is larger than that of the first embodiment (the right circular table design), so that the gap between the adjacent pins 104 is smaller. Thus, there may be a risk that adjacent pins 104 are in direct contact due to the smaller distance, as compared to scheme two (inverted circular table design) versus scheme one (right circular table design). But only to ensure that the gap between adjacent pins 104 is greater than the required gap, e.g., greater than 10 μm.

According to the four implementation modes, the design of the prismatic table has better heat dissipation effect compared with the design of the prismatic table, and the design of the round table has better heat dissipation effect compared with the design of the cylindrical table. The portion of the pin 104 protruding from the target surface 1024a is preferably shaped as a pyramid or a truncated cone.

Alternatively, where the portion of the pins 104 protruding from the target surface 1024a is in the shape of a pyramid, the gap between the pins 104 is larger in a positive trapezoidal design than in a negative trapezoidal design, so that damage caused by direct contact between adjacent pins 104 can be avoided. Also, in the case where the portion of the lead 104 protruding from the target surface 1024a is in the shape of a truncated cone, the clearance between the leads 104 is larger than that of the inverted cone, and the adjacent leads 104 can be prevented from being damaged by direct contact.

Thus, further, the portion of the pin 104 protruding from the target surface 1024a is preferably in the shape of a regular pyramid or a regular truncated cone. That is, the area of the portion of the pin 104 protruding from the target surface 1024a in a section parallel to the target surface 1024a increases with the distance between the section and the target surface 1024 a.

Referring to fig. 1,2, 7 and 10, the light emitting unit 101 includes a first electrode 1011 and a second electrode 1012 between the light emitting part 1013 and the driving circuit 1023. The materials of the first electrode 1011 and the second electrode 1012 each include a metal. For example, a space is provided between the driving circuit 1023 and the light emitting portion 1013, and the first electrode 1011 and the second electrode 1012 are both positioned in the space and are in direct contact with the gas in the space. That is, in the embodiment of the present application, the first electrode 1011 and the second electrode 1012 are disposed at intervals, and are insulated from each other by the gas in the gap, so as to avoid the damage phenomenon caused by the connection of the first electrode 1011 and the second electrode 1012.

The third electrode 1021 and the fourth electrode 1022 included in the driving unit 102 are also located between the light emitting unit 1013 and the driving circuit 1023. The materials of the third electrode 1021 and the fourth electrode 1022 also include metals. The third electrode 1021 and the fourth electrode 1022 are both located within the void and are in direct contact with the gas in the void. That is, the third electrode 1021 and the fourth electrode 1022 are disposed at intervals, and are insulated from each other by the gas in the gap, so that the third electrode 1021 and the fourth electrode 1022 are prevented from being damaged. Alternatively, the gas in the space between the driving circuit 1023 and the light emitting part 1013 may be air.

In the embodiment of the present application, the light emitting assembly 10 includes a plurality of light emitting units 101 and driving units 102 corresponding to the plurality of light emitting units 101. The driving unit 102 may include a plurality of driving circuits 1023 corresponding to the plurality of light emitting units 101. Each of the driving circuits 1023 in the driving unit 102 may be configured to drive a corresponding one of the light emitting units 101 to emit light, and a portion of the film layers in the driving circuits 1023 may be a common film layer.

Alternatively, the plurality of light emitting units 101 include a first color light emitting unit, a second color light emitting unit, and a third color light emitting unit. Wherein the first color, the second color and the third color are different from each other. Illustratively, the first color is red (R), the second color is green (G), and the third color is blue (B).

Fig. 17 is a schematic structural diagram of a light emitting unit according to an embodiment of the present application. Referring to fig. 17, it can be seen that the light emitting unit 101 includes a color film layer 1014, a color conversion layer 1015, and a light emitting layer 1016, which are sequentially stacked in a direction away from the first substrate 103.

Wherein the light emitting layer 1016 emits blue light. Referring to fig. 18, the light emitting layer 1016 includes a first doped layer 10161, a multiple quantum well layer 10612, and a second doped layer 10163, which are stacked. Wherein the first doped layer 10161 is electrically connected to the first electrode 1011, and the second doped layer 10163 is electrically connected to the second electrode 1012. For example, the first doping layer 10161 may be an N-type doping layer and the second doping layer 10163 may be a P-type doping layer. Accordingly, the first electrode 1011 may be referred to as an N-type electrode and the second electrode 1012 may be referred to as a P-type electrode. Alternatively, the material of the first doped layer 10161 may be N-type gallium nitride (GaN), denoted as N-GaN. The material of the second doped layer 10163 may be P-type GaN, denoted P-GaN.

And, the light emitting layer 1016 includes a first light emitting portion, a second light emitting portion, and a third light emitting portion. That is, the light emission colors of the first light emitting portion, the second light emitting portion, and the third light emitting portion are blue. Only one light emitting portion is illustrated in fig. 18.

The color conversion layer 1015 includes a first color conversion portion, a second color conversion portion, and a transparent portion, only one color conversion portion 10151 is illustrated in fig. 18. The front projection of the first color conversion portion on the first substrate 103 overlaps with the front projection of the first light emitting portion 1013 on the first substrate 103, and the first color conversion portion is configured to convert the light emitted by the first light emitting portion 1013 into a color corresponding to the first color conversion portion (for example, into red). The orthographic projection of the second color conversion portion on the first substrate 103 overlaps the orthographic projection of the second light emitting portion 1013 on the first substrate 103, and the second color conversion portion is configured to convert the light emitted by the second light emitting portion 1013 into a color corresponding to the second color conversion portion (for example, into green). The orthographic projection of the third color conversion part on the first substrate 103 overlaps with the orthographic projection of the transparent part on the first substrate 103 for transmitting the light emitted from the third light emitting part 1013.

Optionally, the color conversion layer 1015 further includes a spacing portion 10152 disposed between any two adjacent structures of the first color conversion portion, the second color conversion portion, and the transparent portion, where the spacing portion 10152 is used to distinguish and space the different color conversion portions and the transparent portion.

The color film 1014 includes a first color block, a second color block, a third color block, and a black matrix 10142, only one color block 10141 being illustrated in fig. 18. The black matrix 10142 is located between adjacent color blocks. The orthographic projection of the first color block on the first substrate 103 overlaps with the orthographic projection of the first color conversion portion on the first substrate 103, and the first color block is used for transmitting the light rays of the corresponding color after the conversion of the first color conversion portion and blocking the light rays of other colors. The orthographic projection of the second color block on the first substrate 103 overlaps with the orthographic projection of the second color conversion portion on the first substrate 103, and the second color block is used for transmitting the light rays of the corresponding color after the conversion of the second color conversion portion and blocking the light rays of other colors. The orthographic projection of the third color block on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103, and the third color block is used for transmitting the light rays of the corresponding color transmitted by the transparent portion and blocking the light rays of other colors.

For example, the first color block is a red color block, the second color block is a green color block, and the thirteen color blocks are blue color blocks.

In the embodiment of the present application, referring to fig. 18, the second doping layer 10163 and the multiple quantum well layer 10612 are used to expose the target portion 10161a of the first doping layer 10161. The light emitting layer 1016 further includes a spacer electrode 10164, a conductive layer 10165, and an insulating layer 10166.

Wherein the pad electrode 10164 is connected to the target portion 10161a of the first doped layer 10161, the conductive layer 10165 is located on a side of the second doped layer 10163 away from the first substrate 103, and the insulating layer 10166 is located on a side of the pad electrode 10164 and the conductive layer 10165 away from the first substrate 103. The insulating layer 10166 has a first via (N-type via) and a second via (P-type via). The first via hole is used to expose the pad electrode 10164, the pad electrode 10164 and the first electrode 1011 are connected by the first via hole, the second via hole is used to expose the conductive layer 10165, and the conductive layer 10165 and the second electrode 1012 are connected by the second via hole. Alternatively, the material of the conductive layer 10165 may be Indium Tin Oxide (ITO), and the insulating layer 10166 may be a passivation layer (passivation layer, PVX).

As can also be seen with reference to fig. 17 and 18, the light emitting unit 101 further comprises an adhesive layer 1017 and a buffer layer 1018. The adhesive layer 1017 and buffer layer 1018 are both located between the color conversion layer 1015 and the light emitting layer 1016. The adhesive layer 1017 is used to adhere the color conversion layer 1015 and the buffer layer 1018. The material of buffer layer 1018 may be GaN.

Fig. 19 is a schematic structural diagram of a driving unit according to an embodiment of the present application. As can be seen with reference to fig. 19, the drive unit 102 further comprises a connection structure 1025. The substrate 1024 included in the driving unit 102 has a connection via, and the connection structure 1025 is located in the connection via.

Referring to fig. 19, a driving circuit 1023 is located on one side of a substrate 1024, and the driving circuit 1023 and a connection structure 1025 are connected. The pin 104 is located on a side of the substrate 1024 away from the driving circuit 1023, and the pin 104 is in contact with the connection structure 1025. That is, the side of the pin 104 near the driving unit 102 is connected to the driving circuit 1023 through the connection structure 1025, so that the pin 104 transmits the driving signal to the driving circuit 1023 through the connection structure 1025.

Alternatively, the cross-sectional area of the connection structure 1025 in the thickness direction perpendicular to the substrate 1024 gradually changes with increasing distance from the driving circuit 1023.

Referring to fig. 19, the cross-sectional area of the connection structure 1025 in the thickness direction perpendicular to the substrate 1024 gradually decreases with increasing distance from the driving circuit 1023. That is, the area of the side of the connection structure 1025 near the driving circuit 1023 is larger than the area of the side of the connection structure 1025 near the pin 104, and the projection of the side of the connection structure 1025 near the pin 104 is located in the projection of the side of the connection structure 1025 near the driving circuit 1023.

Or the cross-sectional area of the connection structure 1025 in the thickness direction perpendicular to the substrate 1024 gradually increases with increasing distance from the driving circuit 1023. That is, the area of the side of the connection structure 1025 near the driving circuit 1023 is smaller than the area of the side of the connection structure 1025 near the pin 104, and the projection of the side of the connection structure 1025 near the driving circuit 1023 is located in the projection of the side of the connection structure 1025 near the pin 104. The structure of the connection structure 1025 is not limited in the embodiment of the application.

In an embodiment of the present application, the driving circuit 1023 may include a plurality of thin film transistors and at least one storage capacitor. Alternatively, the driving circuit 1023 may include seven thin film transistors and one storage capacitor, that is, the driving circuit 1023 is the driving circuit 1023 of 7T 1C. Or the driving circuit 1023 may include other numbers of thin film transistors and other numbers of storage capacitors. The number of thin film transistors included in the driving circuit 1023 and the number of storage capacitors included in the driving circuit are not limited in the embodiment of the present application.

Wherein each thin film transistor includes a gate electrode, a source electrode, and a drain electrode. The driving circuit 1023 includes a plurality of thin film transistors connected to each other to realize an effect of driving the light emitting unit 101 to emit light.

Optionally, the plurality of thin film transistors includes at least a data writing transistor, and a source electrode of the data writing transistor is connected to a data line of the display back plate 20 in the display panel. The data line may transmit a data (data) signal to the driving circuit 1023 through the data writing transistor.

One of the plurality of pins 104 included in the light emitting device 10 is connected to a source of a data writing transistor in one of the driving circuits 1023, the data writing transistor being connected to the third electrode 1021 of the driving unit 102 through another thin film transistor (connection relation of each thin film transistor is not illustrated in fig. 19), so that a data line included in the display back panel 20 in the display panel sequentially passes through the pin 104, the driving circuit 1023, and the third electrode 1021 to transmit a data signal to the first electrode 1011 of the light emitting unit 101.

Optionally, the signals transmitted by the 9 pins 104 of the light emitting assembly 10 are respectively a data signal of a driving circuit corresponding to a first color light emitting unit, a data signal of a driving circuit corresponding to a second color light emitting unit, a data signal of a driving circuit corresponding to a third color light emitting unit, a first power supply (VDD) signal, a second power supply (VSS) signal, a reset power supply (vinit) signal, a reset (rst) signal, a gate (gate) signal, and a light emitting control (EM) signal. That is, in the driving circuits corresponding to the three light emitting units included in the light emitting assembly 10, other signals than the data signal may be common signals.

Referring to fig. 19, the driving circuit 1023 includes a buffer insulating layer n1, an active layer n2, a first gate insulating layer n3, a gate layer n4, a second gate insulating layer n5, a source drain layer n6, and a planarization layer n7, which are sequentially stacked on one side of the substrate 1024. The driving unit 102 includes a third electrode 1021 and a fourth electrode 1022 located on a side of the flat layer n7 away from the substrate 1024.

The active layer n2 includes a plurality of active patterns corresponding to the plurality of thin film transistors, each of the active patterns including a source region, a drain region, and a channel region. The source electrode and the drain electrode of the thin film transistor are positioned on the source electrode and the drain electrode layer, the source electrode of the thin film transistor is connected with the source electrode area, and the drain electrode is connected with the drain electrode area.

The gate layer n4 includes a plurality of gate patterns corresponding to the plurality of thin film transistors. The channel region is the overlap region of the orthographic projection of the gate pattern on the substrate 1024 and the orthographic projection of the active pattern on the substrate 1024.

Referring to fig. 19, the gate layer n4 further includes a gate connection portion m41 connected to the connection structure 1025, the gate connection portion m41 being for connection with the connection structure 1025 and the source of the data writing transistor. In order to connect the connection structure 1025 and the gate connection portion m41, the buffer insulating layer n1 and the first gate insulating layer n3 may also have connection vias therein. The connection structure 1025 is located not only in the connection via hole of the substrate 1024 but also in the connection via hole of the buffer insulating layer n1 and the first gate insulating layer n 3.

In summary, the embodiment of the application provides a light emitting assembly, which includes a first substrate, a light emitting unit, a driving unit and pins sequentially disposed. The light emitting unit is connected with the driving unit, and the driving unit is connected with the pins, so that the driving unit can receive driving signals through the pins and control the light emitting unit to emit light. Because the end face of the side of the pin, which is far away from the driving unit, is a plane, the pin is not prepared by adopting an electroplating process or an electroless plating process. Therefore, the whole assembly is not required to be placed in the specific solution when the pins are prepared, and the phenomenon that the electrode connection is damaged due to the fact that the specific solution is immersed between the electrodes is avoided, so that the luminous effect of the luminous assembly can be ensured.

Fig. 20 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present application. Referring to fig. 20, the method may include:

Step S101, acquiring a first target structure.

In the embodiment of the present application, referring to fig. 18, the first target structure includes a first substrate 103, and a light emitting unit 101 positioned at one side of the first substrate 103. The light emitting unit 101 includes a first electrode 1011, a second electrode 1012, and a light emitting part 1013 electrically connected to the first electrode 1011 and the second electrode 1012, respectively.

Referring to fig. 21, a method of acquiring a first target structure includes:

Step S1011, sequentially forming a color film layer and a color conversion layer on one side of the first substrate.

In an embodiment of the present application, referring to fig. 22, the color conversion layer 1015 includes a first color conversion portion, a second color conversion portion, and a transparent portion, and only one color conversion portion 10151 is illustrated in fig. 22. The front projection of the first color conversion portion on the first substrate 103 overlaps with the front projection of the first light emitting portion 1013 on the first substrate 103, and the first color conversion portion is configured to convert the light emitted by the first light emitting portion 1013 into a color corresponding to the first color conversion portion (for example, into red). The orthographic projection of the second color conversion portion on the first substrate 103 overlaps the orthographic projection of the second light emitting portion 1013 on the first substrate 103, and the second color conversion portion is configured to convert the light emitted by the second light emitting portion 1013 into a color corresponding to the second color conversion portion (for example, into green). The orthographic projection of the third color conversion part on the first substrate 103 overlaps with the orthographic projection of the transparent part on the first substrate 103 for transmitting the light emitted from the third light emitting part 1013.

Optionally, the color conversion layer 1015 further includes a spacing portion 10152 disposed between any two adjacent structures of the first color conversion portion, the second color conversion portion, and the transparent portion, where the spacing portion 10152 is used to distinguish and space the different color conversion portions and the transparent portion.

In an embodiment of the present application, the color film layer 1014 includes a first color block, a second color block, a third color block and a black matrix 10142, and fig. 22 shows one color block 10141. The black matrix is located between adjacent color blocks. The orthographic projection of the first color block on the first substrate 103 overlaps with the orthographic projection of the first color conversion portion on the first substrate 103, and the first color block is used for transmitting the light rays of the corresponding color after the conversion of the first color conversion portion and blocking the light rays of other colors. The orthographic projection of the second color block on the first substrate 103 overlaps with the orthographic projection of the second color conversion portion on the first substrate 103, and the second color block is used for transmitting the light rays of the corresponding color after the conversion of the second color conversion portion and blocking the light rays of other colors. The orthographic projection of the third color block on the first substrate 103 overlaps with the orthographic projection of the transparent portion on the first substrate 103, and the third color block is used for transmitting the light rays of the corresponding color transmitted by the transparent portion and blocking the light rays of other colors.

For example, the first color block is a red color block, the second color block is a green color block, and the thirteen color blocks are blue color blocks.

Step S1012, sequentially forming an adhesive layer, a buffer layer, a first doped layer, a multiple quantum well layer, a second doped layer and a conductive layer on a side of the color conversion layer away from the first substrate.

In the embodiment of the application, the bonding layer and the buffer layer can be formed on one side of the color conversion layer away from the first substrate. And referring to fig. 23 and 24, the process of preparing the first doped layer, the multiple quantum well layer, the second doped layer and the conductive layer includes forming a first doped film, a multiple quantum well film, a second doped film and a conductive film, and patterning the first doped film, the multiple quantum well film, the second doped film and the conductive film to obtain the first doped layer, the multiple quantum well layer, the second doped layer and the conductive layer.

Referring to fig. 24, the multiple quantum well layer 10612, the second doping layer 10163, and the conductive layer 10165 have a via hole exposing the target portion 10161a of the first doping layer 10161. The first doped layer 10161 may be an N-type doped layer, and the second doped layer 10163 may be a P-type doped layer. Accordingly, the first electrode 1011 may be referred to as an N-type electrode and the second electrode 1012 may be referred to as a P-type electrode. Alternatively, the material of the first doped layer 10161 may be N-type gallium nitride (GaN), denoted as N-GaN. The material of the second doped layer 10163 may be P-type GaN, denoted P-GaN. The bonding layer 1017 is used to bond the color conversion layer 1015 and the buffer layer 1018, and the material of the buffer layer 1018 may be GaN. The material of the conductive layer 10165 may be Indium Tin Oxide (ITO).

In step S1013, a pad electrode is formed in the via hole of the multiple quantum well layer, the second doped layer and the conductive layer.

Referring to fig. 25, the pad electrode 10164 may be connected to the first doping layer 10161.

In step S1014, an insulating layer is formed on the side of the pad electrode and the conductive layer away from the second substrate.

Referring to fig. 26, the insulating layer 10166 has a first via 10166a and a second via 10166b, the first via 10166a exposing the pad electrode 10164, and the second via 10166b exposing the conductive layer 10165.

In step S1015, a first electrode and a second electrode are formed on a side of the insulating layer away from the first substrate.

Referring to fig. 18, at least a portion of the first electrode 1011 is located in the first via hole and is connected to the pad electrode 10164 exposed from the first via hole, thereby realizing connection between the first electrode 1011 and the first doped layer 10161. At least a portion of the second electrode 1012 is located in the second via hole and is connected to the conductive layer 10165 exposed by the second via hole, so as to connect the second electrode 1012 and the second doped layer 10163.

Optionally, the material of the first electrode 1011 and the second electrode 1012 each comprise a metal.

Step S102, acquiring a second target structure.

In an embodiment of the present application, referring to fig. 27, the second target structure includes a second substrate, and an optical adhesive layer located on one side of the second substrate, a driving unit 102, and a pin 104. The optical glue layer has a via, and the pin 104 is located in the via. And, the pin 104 is connected to the driving unit 102.

Referring to fig. 21, the driving unit 102 includes a third electrode 1021, a fourth electrode 1022, and a driving circuit 1023. The third electrode 1021 and the fourth electrode 1022 are connected to the driving circuit 1023, respectively.

Referring to fig. 28, a method of acquiring a second target structure includes:

Step S1021, an optical adhesive layer is formed on one side of the second substrate.

In the embodiment of the application, the process of forming the optical cement layer comprises the steps of coating an optical cement film on one side of the second substrate, and carrying out patterning treatment on the optical cement film to obtain the optical cement layer. The patterning process comprises photoresist coating, exposure, development, etching and photoresist removal.

Wherein, the photosensitive wave band of the optical adhesive layer (PR) is different from the photosensitive wave band of the Photoresist (PR) adopted by the patterning treatment process when preparing other film layers. Therefore, the optical adhesive layer (PR) can be prepared without being influenced when other film layers are prepared. Generally, the photosensitive wavelength of PR glue includes 405,436,365 wavelength bands, and the photosensitive wavelength of optical glue layer and the photosensitive wavelength of photoresist are only required to be different.

Referring to fig. 29, the optical cement layer may have a via G1, and the via G1 is used to fill material to form the pin 104 of the light emitting assembly 10. The thickness of the optical glue layer ranges from 15 μm to 25 μm, and thus the height of the formed leads 104 may range from 15 μm to 25 μm.

Step S1022, filling conductive materials in the through holes of the optical adhesive layer.

Referring to fig. 30, the conductive material 104a may completely fill the via G1 of the optical paste layer, and the conductive material 104a is used as the lead 104 included in the light emitting device 10. Also, the shape of the leads 104 may be the same as the shape of the vias of the optical cement layer.

Step S1023, forming a substrate and a buffer insulating layer on one side of the optical adhesive layer away from the second substrate.

In the embodiment of the application, the process of forming the substrate 1024 and the buffer insulating layer n1 comprises the steps of coating a substrate 1024 film and a buffer film on one side of the optical adhesive layer far away from the second substrate, and performing patterning treatment on the substrate 1024 film and the buffer film to obtain the substrate 1024 and the buffer insulating layer n1.

Referring to fig. 31, the substrate 1024 and the buffer insulating layer n1 may have a via hole G2 therein, the via hole G2 being used to fill a material to form the connection structure 1025 of the light emitting assembly 10.

And step S1024, filling conductive materials in the through holes of the substrate and the buffer insulating layer.

Referring to fig. 32, a conductive material may completely fill the substrate 1024 and the via G2 of the buffer insulating layer n1, and the conductive material 1025a is used as the connection structure 1025 included in the light emitting assembly 10. Also, the shape of the connection structure 1025 may be the same as the shape of the via hole of the substrate 1024 and the buffer insulating layer n 1.

Step S1025, forming an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a source/drain layer and a planarization layer on a side of the buffer insulating layer away from the second substrate.

In an embodiment of the present application, referring to fig. 33, the active layer n2 includes a plurality of active patterns corresponding to a plurality of thin film transistors, each active pattern including a source region, a drain region, and a channel region. The source electrode and the drain electrode of the thin film transistor are positioned on the source electrode and the drain electrode layer, the source electrode of the thin film transistor is connected with the source electrode area, and the drain electrode is connected with the drain electrode area.

The gate layer n4 includes a plurality of gate patterns corresponding to the plurality of thin film transistors. The channel region is the overlap region of the orthographic projection of the gate pattern on the substrate 1024 and the orthographic projection of the active pattern on the substrate 1024.

Step S1026, forming a third electrode and a fourth electrode on a side of the planarization layer away from the second substrate.

In an embodiment of the present application, referring to fig. 27, the third electrode 1021 and the fourth electrode 1022 are disposed at intervals. The data signal pin 104 is connected to the source of the data writing transistor, and the data writing transistor is connected to the third electrode 1021 through another thin film transistor in the driving circuit 1023, for transmitting a data signal. The VSS signal pin 104 is connected to the first electrode 1011.

Optionally, the materials of the third electrode 1021 and the fourth electrode 1022 both include metals.

Step S103, the driving unit and the light emitting unit are connected in a bonding mode through a bonding process.

In an embodiment of the present application, referring to fig. 34, after the light emitting unit 101 and the driving unit 102 are bonded and connected through a bonding process, the third electrode 1021 and the first electrode 1011 may be electrically connected, and the fourth electrode 1022 and the second electrode 1012 may be electrically connected.

Wherein, the first electrode 1011 and the second electrode 1012 included in the light emitting unit 101 are both located between the light emitting part 1013 and the driving circuit 1023, and the third electrode 1021 and the fourth electrode 1022 included in the driving unit 102 are both located between the light emitting part 1013 and the driving circuit 1023. The materials of the first electrode 1011, the second electrode 1012, the third electrode 1021, and the fourth electrode 1022 all include metals. For example, the driver circuit 1023 and the light emitting portion 1013 have a space therebetween, and the first electrode 1011, the second electrode 1012, the third electrode 1021, and the fourth electrode 1022 are located in the space and are in direct contact with the gas in the space.

That is, in the embodiment of the present application, the first electrode 1011 and the second electrode 1012 are disposed at a distance, and the third electrode 1021 and the fourth electrode 1022 are disposed at a distance. The first electrode 1011 and the second electrode 1012, and the third electrode 1021 and the fourth electrode 1022 are insulated from each other by the gas in the gap, so that the first electrode 1011 and the second electrode 1012 are prevented from being damaged, and the third electrode 1021 and the fourth electrode 1022 are prevented from being damaged.

Alternatively, the gas in the space between the driving circuit 1023 and the light emitting part 1013 may be air or a protective gas. Wherein the protective gas may be nitrogen or an inert gas.

Step S104, removing the second substrate from one side of the optical adhesive layer.

In an embodiment of the present application, referring to fig. 35, the second substrate may be removed from one side of the optical adhesive layer after the bonding connection. Alternatively, referring to fig. 36, the second substrate is peeled from one side of the optical adhesive layer using a laser lift-off (laser liftoff, LLO) method. Or referring to fig. 37, the second substrate is etched away from one side of the optical cement layer using an etching process. The film layer a in fig. 36 and 37 is used to represent the other film layers in fig. 35 except for the second substrate, the optical adhesive layer.

When the etching process is adopted, the light-emitting unit 101 and the driving unit 102 need to be protected, so before the etching process is performed, a release film and an acid-proof film are formed on the side of the film layer a away from the optical adhesive layer.

Further, after the second substrate is removed from the side of the driving unit 102, the first substrate 103 may be thinned (the thickness of the first substrate 103 after the thinning process is smaller than the thickness of the first substrate 103 before the thin film process), so that the total thickness of the finally formed light emitting assembly 10 is thinner, which is convenient for realizing the light and thin display panel.

In the embodiment of the present application, after the second substrate is removed, a protective film (yemporary process film, TPF) may be attached to a side of the first substrate 103 away from the optical adhesive layer. And the protective film is then removed before the light emitting assembly 10 and the display back plate 20 are subsequently die bonded.

When the protective film is removed, the optical adhesive layer can also play a supporting role in addition to the supporting role of the substrate 1024 on the side of the driving circuit 1023 away from the first substrate 103. Thus, although the protective film needs to be torn off, since both the substrate 1024 and the optical adhesive layer play a supporting role (supporting force is large), breakage of the device due to the fact that the device is pulled and curled can be avoided.

Step S105, removing the optical cement layer from one side of the driving unit.

In an embodiment of the present application, the optical cement layer is removed from one side of the driving unit before die bonding the light emitting assembly 10 and the display back plate 20. Referring to fig. 38, the optical cement layer may be removed from one side of the driving unit 102 based on a dry etching photoresist removal technique, whereby the pins 104 located in the vias of the optical cement layer may be exposed. The end surface of the side of the pin 104 away from the driving unit 102 is a plane.

In the embodiment of the application, a plurality of light emitting components can be prepared at the same time. For example, referring to fig. 39, a plurality of light emitting units (each of black small-sized blocks in fig. 39 for representing a blue light emitting unit, a red light emitting unit, and a green light emitting unit included in one light emitting unit) included in one large-sized first substrate are formed based on the above-described steps S1011 to S1015, referring to fig. 40, a plurality of driving circuits (each of white small-sized blocks in fig. 40 for representing a driving unit included in one light emitting unit, each of driving units including a blue driving circuit corresponding to a red light emitting unit, and a green driving circuit corresponding to a green light emitting unit) included in one large-sized second substrate are formed based on the above-described steps S1021 to S1026, and a plurality of light emitting units included in the first substrate shown in fig. 39 are bonded to the plurality of driving units included in the second substrate shown in fig. 40 by a bonding process, and the bonded structure is cut to obtain a plurality of light emitting units. However, the shapes of the first substrate and the second substrate shown in fig. 39 to 41 may be other shapes, and are not limited thereto.

It should be noted that, the sequence of the steps of the preparation method of the light emitting component provided by the embodiment of the application can be properly adjusted, and the steps can be correspondingly increased or decreased according to the situation. For example, step S101 and step S102 may be performed simultaneously, and step S104 may be performed before step S103. Any method that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered in the protection scope of the present application, and thus will not be repeated.

In summary, the embodiment of the application provides a method for manufacturing a light emitting assembly, where the light emitting assembly manufactured by the method includes sequentially disposing a first substrate, a light emitting unit, a driving unit and pins. The light emitting unit is connected with the driving unit, and the driving unit is connected with the pins, so that the driving unit can receive driving signals through the pins and control the light emitting unit to emit light. Because the pins are not prepared by adopting an electroplating process or an electroless plating process, the whole assembly is not required to be placed in a specific solution when the pins are prepared, and the phenomenon that the electrode connection is damaged due to the fact that the specific solution is immersed between the electrodes is avoided, so that the luminous effect of the luminous assembly can be ensured. And the end face of the side, far away from the driving unit, of the pin prepared by the method is a plane.

Fig. 42 is a schematic structural diagram of a display panel according to an embodiment of the present application. Referring to fig. 42, the display panel 00 includes a display back plate 20 and a plurality of light emitting assemblies 10.

Referring to fig. 43, a plurality of light emitting assemblies 10 are located in a display area 00a of a display panel 00, and the plurality of light emitting assemblies 10 are arranged in an array. The display back plate 20 is used for providing driving signals for the driving unit 102 through a plurality of pins 103 in the light emitting assembly 10, so that the driving unit 102 drives the light emitting unit 101 to emit light.

In the embodiment of the present application, the plurality of light emitting components 10 and the display back plate 20 are die-bonded through a eutectic bonding process. Wherein, eutectic refers to the formation of eutectic metal compounds by two metals under the bonding condition of a certain temperature, so as to realize bonding.

Since the display panel may have substantially the same technical effects as the light emitting assembly described in the previous embodiments, the technical effects of the display panel are not repeated herein for the sake of brevity.

The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application. Unless defined otherwise, technical or scientific terms used in the embodiments of the present application should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present application belongs.

The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application. Unless defined otherwise, technical or scientific terms used in the embodiments of the present application should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present application belongs. The terms "first," "second," "third," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, is intended to mean that elements or items that are present in front of "comprising" or "comprising" are included in the word "comprising" or "comprising", and equivalents thereof, without excluding other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to denote relative positional relationships, which may also change accordingly when the absolute position of the object to be described changes.

The foregoing description of the preferred embodiments of the present application is not intended to limit the application, but rather, the application is to be construed as limited to the appended claims.

Claims (19)

1. A light emitting assembly, comprising:

A light emitting unit (101), wherein the light emitting unit (101) comprises a first electrode (1011), a second electrode (1012), and a light emitting part (1013) electrically connected to the first electrode (1011) and the second electrode (1012), respectively;

A driving unit (102), the driving unit (102) including a third electrode (1021), a fourth electrode (1022) and a driving circuit (1023), the third electrode (1021) and the fourth electrode (1022) being located on a side of the driving unit (102) facing the light emitting unit (101), the third electrode (1021) and the fourth electrode (1022) being electrically connected to the driving circuit (1023), respectively, the third electrode (1021) and the first electrode (1011) being electrically connected, the fourth electrode (1022) being electrically connected to the second electrode (1012);

A first substrate (103) located on a side of the light emitting unit (101) away from the driving unit (102);

and the pin (104), the pin (104) is located in one side of the driving unit (102) far away from the light-emitting unit (101), the pin (104) is connected with the driving unit (102), and the end face of one side of the pin (104) far away from the driving unit (102) is a plane.

2. The light emitting assembly according to claim 1, wherein the drive unit (102) comprises a substrate (1024), the drive circuit (1023) being located on one side of the substrate (1024), the substrate (1024) having a target surface (1024 a) remote from one side of the drive circuit (1023);

The pins (104) are located on a side of the substrate (1024) away from the driving unit (102), and an end face of the side of the pins (104) away from the substrate (1024) is parallel to the target surface (1024 a).

3. The light emitting assembly according to claim 2, wherein a distance between an end surface of a side of the pin (104) remote from the substrate (1024) and the target surface (1024 a) ranges from 15 micrometers to 25 micrometers.

4. The light emitting assembly according to claim 1, wherein the drive unit (102) comprises a substrate (1024), the substrate (1024) having a target surface (1024 a) remote from a side of the drive circuit (1023);

the portion of the pin (104) protruding from the target surface (1024 a) is one of a prism, a pyramid, a cylinder, and a truncated cone.

5. The light emitting assembly according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024 a) is in the shape of a prism having a top surface (m 2) on a side closer to the target surface (1024 a) and a bottom surface (m 1) on a side farther from the target surface (1024 a), the bottom surface (m 1) being the end surface;

the prism further has a plurality of rectangular sides (m 3), the relationship between the length W1 of a first side of the rectangular sides (m 3) and the length H1 of a second side of the rectangular sides (m 3) being such that w1=k1×h1;

the value range of k1 is 1.5 to 2.5, the first side is a side of the rectangular side surface (m 3) close to the top surface (m 2), and the second side is a side of the rectangular side surface (m 3) located between the top surface (m 2) and the bottom surface (m 1).

6. The light emitting assembly according to claim 4, wherein the portion of the pin (104) protruding from the target surface (1024 a) is shaped as a land having a top surface (m 2) on a side closer to the target surface (1024 a) and a bottom surface (m 1) on a side farther from the target surface (1024 a), the bottom surface (m 1) being the end surface;

the pyramid also has a plurality of trapezoidal sides (m 3), the relationship between the length W2 of the upper base of the trapezoidal sides (m 3) and the height H2 of the pyramid satisfying w2=k2×h2;

The value range of k2 is 1.5 to 2.5, the length of the upper bottom of the trapezoid side surface (m 3) is smaller than that of the lower bottom of the trapezoid side surface (m 3), and the height H2 of the terrace is equal to the distance between the top surface (m 2) and the bottom surface (m 1).

7. The light assembly of claim 6 wherein an area of an orthographic projection of the top surface (m 2) onto the substrate (1024) is smaller than an area of an orthographic projection of the bottom surface (m 1) onto the substrate (1024), and an orthographic projection of the top surface (m 2) onto the substrate (1024) is located within an orthographic projection of the bottom surface (m 1) onto the substrate (1024), an upper bottom of the trapezoidal side surface (m 3) being closer to the substrate (1024) than a lower bottom of the trapezoidal side surface (m 3);

The area of the orthographic projection of the top surface (m 2) on the substrate (1024) is larger than the area of the orthographic projection of the bottom surface (m 1) on the substrate (1024), and the orthographic projection of the bottom surface (m 1) on the substrate (1024) is positioned within the orthographic projection of the top surface (m 2) on the substrate (1024), and the lower bottom of the trapezoid side surface (m 3) is closer to the substrate (1024) than the upper bottom of the trapezoid side surface (m 3).

8. The light emitting assembly of claim 4, wherein the portion of the pin (104) protruding from the target surface (1024 a) is shaped as a cylinder having a side surface (m 3), a top surface (m 2) on a side closer to the target surface (1024 a), and a bottom surface (m 1) on a side farther from the target surface (1024 a), the bottom surface (m 1) being the end surface;

The relation between the diameter W4 of the top surface (m 2) or the bottom surface (m 1) and the height H4 of the cylinder satisfies that w4=k4×h4;

Wherein the value of k4 ranges from 1.5 to 2.5, and the height H4 of the cylinder is equal to the distance between the top surface (m 2) and the bottom surface (m 1).

9. The light emitting assembly of claim 4, wherein the portion of the pin (104) protruding from the target surface (1024 a) is shaped as a truncated cone having a side surface (m 3), a top surface (m 2) on a side closer to the target surface (1024 a), and a bottom surface (m 1) on a side farther from the target surface (1024 a), the bottom surface (m 1) being the end surface;

The diameter of the top surface (m 2) and the diameter of the bottom surface (m 1) are different, and the relation between the smaller diameter W5 in the top surface (m 2) and the bottom surface (m 1) and the height H5 of the round table satisfies that W5=k5×H25;

Wherein the value range of k5 is 1.5 to 2.5, and the height H5 of the round table is equal to the distance between the top surface (m 2) and the bottom surface (m 1).

10. The light emitting assembly according to claim 6 or 9, wherein the area of the portion of the pin (104) protruding from the target surface (1024 a) in a cross section parallel to the target surface (1024 a) increases with increasing distance between the cross section and the target surface (1024 a).

11. The light emitting assembly according to any one of claims 1 to 9, wherein the first electrode (1011) and the second electrode (1012) are both located between the light emitting portion (1013) and the driving circuit (1023);

A partial region between the drive unit (102) and the light-emitting unit (101) has a gap, and the first electrode (1011) and the second electrode (1012) are both located in the gap and are in direct contact with the gas in the gap.

12. The light emitting assembly according to any one of claims 1 to 9, wherein the light emitting assembly (10) comprises a plurality of light emitting units (101) and the driving unit (102) corresponding to the plurality of light emitting units (101);

the plurality of light emitting units (101) includes a first color light emitting unit (101), a second color light emitting unit (101), and a third color light emitting unit (101), the first color, the second color, and the third color being different from each other.

13. The light emitting assembly according to claim 12, wherein the light emitting unit (101) further comprises a color film layer (1014), a color conversion layer (1015) and a light emitting layer (1016) sequentially stacked in a direction away from the first substrate (103), wherein the light emitting layer (1016) emits blue light;

The light emitting layer (1016) comprises a first doped layer (10161), a multiple quantum well layer (10612) and a second doped layer (10163) which are stacked, wherein the first doped layer (10161) is electrically connected with the first electrode (1011), the second doped layer (10163) is electrically connected with the second electrode (1012), and the light emitting layer (1016) comprises a first light emitting part, a second light emitting part and a third light emitting part.

14. The light emitting assembly according to any one of claims 1 to 9, wherein the drive unit (102) further comprises a connection structure (1025), and the drive unit (102) comprises a substrate (1024) having a connection via, the connection structure (1025) being located within the connection via;

The driving circuit (1023) is located on one side of the substrate (1024), the driving circuit (1023) is connected with the connecting structure (1025), and one side, close to the driving unit (102), of the pin (104) is in contact with the connecting structure (1025).

15. The light emitting assembly according to claim 14, wherein the driving circuit (1023) comprises a plurality of thin film transistors each comprising a gate, a source and a drain, and at least one storage capacitor;

The pin (104) is connected with the source electrode of one of the thin film transistors through the connecting structure (1025) and is used for providing a data signal transmitted from a display backboard in a display panel for the driving circuit (1023).

16. The light emitting assembly according to claim 15, wherein the driving circuit (1023) comprises a buffer insulating layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer, a source-drain layer, and a planarization layer, which are sequentially stacked on one side of the substrate (1024), the third electrode (1021) and the fourth electrode (1022) being on one side of the planarization layer away from the substrate (1024);

the active layer includes a plurality of active patterns corresponding to the plurality of thin film transistors, each of the active patterns including a source region, a drain region, and a channel region;

the source electrode and the drain electrode of the thin film transistor are positioned on the source-drain electrode layer, the source electrode of the thin film transistor is connected with the source electrode area, and the drain electrode of the thin film transistor is connected with the drain electrode area;

The first gate layer includes a plurality of gate patterns corresponding to the plurality of thin film transistors, and the channel region is an overlapping region of an orthographic projection of the gate patterns on the substrate (1024) and an orthographic projection of the active patterns on the substrate (1024).

17. A method of making a light emitting assembly, the method comprising:

Acquiring a first target structure, wherein the first target structure comprises a first substrate (103) and a light emitting unit (101) positioned on one side of the first substrate (103), and the light emitting unit (101) comprises a first electrode (1011), a second electrode (1012) and a light emitting part (1013) electrically connected with the first electrode (1011) and the second electrode (1012) respectively;

The method comprises the steps of obtaining a second target structure, wherein the second target structure comprises a second substrate, an optical adhesive layer, a driving unit (102) and a pin (104), wherein the optical adhesive layer is positioned on one side of the second substrate, the optical adhesive layer is provided with a through hole, the pin (104) is positioned in the through hole, the pin (104) is connected with the driving unit (102), the driving unit (102) comprises a third electrode (1021), a fourth electrode (1022) and a driving circuit (1023), and the third electrode (1021) and the fourth electrode (1022) are respectively and electrically connected with the driving circuit (1023);

bonding the driving unit (102) and the light emitting unit (101) by a bonding process, the third electrode (1021) and the first electrode (1011) being electrically connected, and the fourth electrode (1022) and the second electrode (1012) being electrically connected;

the second substrate and the optical adhesive layer are removed from one side of the driving unit (102), so that the pins (104) protrude out of one side of the driving unit (102) away from the light emitting unit (101), and the end face of one side of the pins (104) away from the driving unit (102) is a plane.

18. The method of claim 17, wherein the thickness of the optical cement layer ranges from 15 microns to 25 microns.

19. A display panel, characterized in that it comprises a display back plate, and a plurality of light emitting assemblies (10) according to any one of claims 1 to 16 arranged in an array on one side of the display back plate (20);

The display backboard (20) is used for providing driving signals for the driving unit (102) through a plurality of pins (104) in the light-emitting assembly (10) so that the driving unit (102) drives the light-emitting unit (101) to emit light.