技术领域Technical Field
本申请涉及加速度传感器领域，尤其涉及一种光电加速度传感器及其制造方法。The present application relates to the field of acceleration sensors, and in particular to a photoelectric acceleration sensor and a manufacturing method thereof.
背景技术Background Art
加速度传感器是一种广泛应用于各种机动设备甚至移动终端和编写电子系统的传感器，用来实施感测载体的现行运动加速度以及推测线速度及重要的运动数据，以有力地支持对载体运动的实时控制。当今，加速度传感器，尤其以硅半导体为基体的MEMS加速度传感器，以其微型化、低成本、高可靠性等诸多优点，应用市场从最初的飞机和汽车等高端传统系统应用，大规模的拓展至各种移动终端及便携电子系统。Accelerometer is a sensor widely used in various motorized equipment and even mobile terminals and electronic systems. It is used to sense the current motion acceleration of the carrier and infer the linear velocity and important motion data to effectively support the real-time control of the carrier's motion. Today, accelerometers, especially MEMS accelerometers based on silicon semiconductors, have many advantages such as miniaturization, low cost, and high reliability. The application market has expanded from the initial high-end traditional system applications such as aircraft and automobiles to various mobile terminals and portable electronic systems on a large scale.
MEMS运动传感器，通常是在单晶硅基体上做出至少一个在空腔内的硅惯性体，硅惯性体通过多个单向柔性弹簧悬挂于空腔，并与硅基体相连。而感测两者之间的相对运动，则是以两者之间的距离变化所产生的电学效应感测。为此，虽然处于相对运行的过程中，惯性体和基体之间需要协调以具有可感测到的电学效应。因此，硅基MEMS运动传感器均采用多个微板构成的惯性体与基体的微板相对，以形成足够大面积的平板电容。随着两者的相对运动，板间距离变化导致平板电容变化，因此，通过感测电容变化而推测惯性体与基体的相对位移和加速度等数据。MEMS motion sensors usually have at least one silicon inertial body in a cavity made on a single crystal silicon substrate. The silicon inertial body is suspended in the cavity by multiple unidirectional flexible springs and connected to the silicon substrate. The relative motion between the two is sensed by the electrical effect generated by the change in the distance between the two. For this reason, although in the process of relative operation, the inertial body and the substrate need to be coordinated to have a detectable electrical effect. Therefore, silicon-based MEMS motion sensors all use an inertial body composed of multiple micro-plates that are opposite to the micro-plates of the substrate to form a flat plate capacitor with a large enough area. As the two move relative to each other, the change in the distance between the plates causes the change in the flat plate capacitance. Therefore, the relative displacement and acceleration data between the inertial body and the substrate are inferred by sensing the change in capacitance.
需要特别注意的是，由于相对运动是通过相对移动的多个平行平板间的电容变化来表征的，因此传统MEMS加速度必然存在以下几个方面的问题：相对位移只能局限于非常小的范围内，不能过大也不能过小，以保持平板间的电容在可测的范围内，通常是0.1～10um；惯性体的质量和弹性连接器的弹性系数比较小，因而自振频率较高；加速度数据为二次推算，系统误差较大。It is important to note that, since relative motion is characterized by the change in capacitance between multiple parallel plates that move relative to each other, traditional MEMS acceleration is bound to have the following problems: relative displacement can only be limited to a very small range, neither too large nor too small, in order to keep the capacitance between the plates within a measurable range, usually 0.1 to 10um; the mass of the inertial body and the elastic coefficient of the elastic connector are relatively small, so the natural frequency is relatively high; the acceleration data is a secondary extrapolation, and the system error is large.
发明内容Summary of the invention
为了解决上述产品性能的问题，本发明提供了一种光电感应加速度传感器及其制造方法。In order to solve the above-mentioned product performance problem, the present invention provides a photoelectric induction acceleration sensor and a manufacturing method thereof.
本发明提供了一种光电感应加速度传感器及其制造方法，以卡氏垂直坐标系为参照，包括固定基体和惯性体，固定基体内具有封闭空腔，所述惯性体位于空腔内，与空腔具有间隙，惯性体通过弹性装置与固定基体连接，惯性体能够在空腔内沿X轴方向振动；惯性体的第一表面处具有沿Y轴方向设置的光波导管；固定基体的和惯性体第一表面相对的第一内表面具有沿X轴方向设置的若干个光电感应单元及光导装置，所述光导装置的出射光束沿Z轴方向入射到惯性体的光波导管；惯性体内的光波导管将入射光束沿光波导管的Y轴方向传输，并沿Z轴方向出射到光电感应单元；当惯性体沿X轴方向振动，则至少有一部分光束入射光波导管，光波导管的出射光束被至少一个光电感应单元接收。The present invention provides a photoelectric induction acceleration sensor and a manufacturing method thereof. The sensor takes a Cartesian vertical coordinate system as a reference and comprises a fixed base and an inertial body. The fixed base has a closed cavity. The inertial body is located in the cavity and has a gap with the cavity. The inertial body is connected to the fixed base through an elastic device. The inertial body can vibrate along the X-axis direction in the cavity. The first surface of the inertial body has an optical waveguide arranged along the Y-axis direction. The first inner surface of the fixed base opposite to the first surface of the inertial body has a plurality of photoelectric sensing units and a light guide arranged along the X-axis direction. The outgoing light beam of the light guide device is incident on the optical waveguide of the inertial body along the Z-axis direction. The optical waveguide in the inertial body transmits the incident light beam along the Y-axis direction of the optical waveguide and emits it to the photoelectric sensing unit along the Z-axis direction. When the inertial body vibrates along the X-axis direction, at least a part of the light beam is incident on the optical waveguide, and the outgoing light beam of the optical waveguide is received by at least one photoelectric sensing unit.
本发明的光电感应加速度传感器，由于采用光电感应技术，因此大大降低了最低感测到的加速度，扩大了感测范围，具有直接、精确和无限制的优点，同时具有抗电磁干扰强的特性，不受算法等因素的影响。The photoelectric induction acceleration sensor of the present invention, due to the use of photoelectric induction technology, greatly reduces the lowest sensed acceleration, expands the sensing range, has the advantages of being direct, accurate and unlimited, and has strong resistance to electromagnetic interference and is not affected by factors such as algorithms.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
图1为本发明的光电感应惯性传感器第一实施例的立体示意图；FIG1 is a perspective schematic diagram of a first embodiment of a photoelectric inertial sensor of the present invention;
图2为本发明的光电感应惯性传感器第一实施例的沿A-A’的剖面示意图；FIG2 is a schematic cross-sectional view along A-A' of the first embodiment of the photoelectric inertial sensor of the present invention;
图3为本发明的光电感应惯性传感器第一实施例的沿B-B’的剖面示意图；FIG3 is a schematic cross-sectional view along the line B-B′ of the first embodiment of the photoelectric inertial sensor of the present invention;
图4为本发明的光电感应惯性传感器的制造方法一实施例的流程示意图；FIG4 is a schematic flow chart of an embodiment of a method for manufacturing a photoelectric inertial sensor according to the present invention;
图5a-图5f为根据本发明的光电感应惯性传感器的制造方法一实施例制备光电感应惯性传感器过程的沿A-A’的剖面示意图；5a-5f are cross-sectional schematic diagrams along A-A' of the process of preparing a photoelectric inertial sensor according to an embodiment of the method for manufacturing a photoelectric inertial sensor of the present invention;
图6为根据本发明的光电感应惯性传感器的制造方法一实施例制备光电感应惯性传感器过程中形成光波导管过程的沿B-B’的剖面示意图。6 is a schematic cross-sectional view along B-B' of a process of forming an optical waveguide during the preparation of a photoelectric inertial sensor according to an embodiment of a method for manufacturing a photoelectric inertial sensor of the present invention.
具体实施方式DETAILED DESCRIPTION
下面将更详细地描述本发明的优选实施方式。虽然以下描述了本发明的优选实施方式，然而应该理解，可以以各种形式实现本发明而不应被这里阐述的实施方式所限制。The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein.
在本发明中，在未作相反说明的情况下，使用的方位词如“上、下”通常是指装置在正常使用状态下的上和下，“内、外”是指相对于装置轮廓而言的。此外，术语“第一、第二、第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一、第二、第三”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。本发明中为电学器件，因此连接、互连均表示导电互连。由于附图是对同一装置的描述，因此图中相同标号表示同一部件。In the present invention, unless otherwise specified, the directional words used, such as "upper and lower", generally refer to the upper and lower parts of the device in normal use, and "inside and outside" refer to the outline of the device. In addition, the terms "first, second, third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first, second, third" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined. In the present invention, it is an electrical device, so connection and interconnection both refer to conductive interconnection. Since the accompanying drawings are descriptions of the same device, the same numbers in the drawings represent the same components.
下面结合附图对本发明的具体实例进行进一步详细说明。The specific examples of the present invention are further described in detail below with reference to the accompanying drawings.
本公开实施例提供了一种光电感应惯性传感器，以卡氏垂直坐标系为参照，包括固定基体和惯性体，固定基体内具有封闭空腔，所述惯性体位于空腔内，与空腔具有间隙，惯性体通过弹性装置与固定基体连接，惯性体能够在空腔内沿X轴方向振动；惯性体的第一表面处具有沿Y轴方向设置的光波导管；固定基体的和惯性体第一表面相对的第一内表面具有沿X轴方向设置的若干个光电感应单元及光导装置，所述光导装置的出射光束沿Z轴方向入射到惯性体的光波导管；惯性体内的光波导管将入射光束沿光波导管的Y轴方向传输，并沿Z轴方向出射到光电感应单元；当惯性体沿X轴方向振动，则至少有一部分光束入射光波导管，光波导管的出射光束被至少一个光电感应单元接收。The embodiment of the present disclosure provides a photoelectric sensing inertial sensor, which uses a Cartesian vertical coordinate system as a reference, and includes a fixed base and an inertial body. The fixed base has a closed cavity, the inertial body is located in the cavity, and has a gap with the cavity. The inertial body is connected to the fixed base through an elastic device, and the inertial body can vibrate along the X-axis direction in the cavity; the first surface of the inertial body has an optical waveguide arranged along the Y-axis direction; the first inner surface of the fixed base opposite to the first surface of the inertial body has a plurality of photoelectric sensing units and a light guide device arranged along the X-axis direction, and the outgoing light beam of the light guide device is incident on the optical waveguide of the inertial body along the Z-axis direction; the optical waveguide in the inertial body transmits the incident light beam along the Y-axis direction of the optical waveguide, and emits it to the photoelectric sensing unit along the Z-axis direction; when the inertial body vibrates along the X-axis direction, at least a part of the light beam is incident on the optical waveguide, and the outgoing light beam of the optical waveguide is received by at least one photoelectric sensing unit.
具体的，图1示出了根据本公开的一个实施例的光电感应惯性传感器的立体示意图，图2示出了根据本公开的一个实施例的光电感应惯性传感器的沿A-A’的剖面示意图。参照图1和图2，以卡氏垂直坐标系为参照，光电感应惯性传感器10包括固定基体100和惯性体200，固定基体100内具有封闭空腔110，惯性体200位于空腔110内，通过弹性装置300与固定基体100连接，并且能够在空腔110内沿X轴方向振动；在惯性体200的第一表面处设置有沿Y轴方向的光波导管210；固定基体100的和惯性体200第一表面相对的第一内表面具有沿X轴方向设置的若干个光电感应单元120及光导装置130，光束从光导装置130射出，光导装置130的出射光束沿Z轴方向入射到惯性体200中的光波导管210内；惯性体200内的光波导管210将入射光束沿Y轴方向传输，并沿Z轴方向射出到光电感应单元120；当固定基体100和惯性体200发生相对运动时，惯性体200沿X轴方向振动，则至少有一部分光束从光导装置130入射光波导管210，光波导管210的出射光束被至少一个光电感应单元120接收。Specifically, FIG1 shows a three-dimensional schematic diagram of a photoelectric inertial sensor according to an embodiment of the present disclosure, and FIG2 shows a cross-sectional schematic diagram along A-A' of a photoelectric inertial sensor according to an embodiment of the present disclosure. Referring to FIG1 and FIG2, with reference to the Cartesian vertical coordinate system, the photoelectric inertial sensor 10 includes a fixed base 100 and an inertial body 200. The fixed base 100 has a closed cavity 110. The inertial body 200 is located in the cavity 110 and is connected to the fixed base 100 through an elastic device 300, and can vibrate in the cavity 110 along the X-axis direction; an optical waveguide 210 along the Y-axis direction is provided on the first surface of the inertial body 200; and a first inner surface of the fixed base 100 opposite to the first surface of the inertial body 200 has a plurality of photoelectric sensing units 120 arranged along the X-axis direction. and the light guide device 130, the light beam is emitted from the light guide device 130, and the outgoing light beam of the light guide device 130 is incident on the optical waveguide 210 in the inertial body 200 along the Z-axis direction; the optical waveguide 210 in the inertial body 200 transmits the incident light beam along the Y-axis direction, and emits it to the photoelectric sensing unit 120 along the Z-axis direction; when the fixed base 100 and the inertial body 200 move relative to each other, the inertial body 200 vibrates along the X-axis direction, then at least a part of the light beam is incident on the optical waveguide 210 from the light guide device 130, and the outgoing light beam of the optical waveguide 210 is received by at least one photoelectric sensing unit 120.
在本公开实施例中，在惯性体沿X轴方向的两个侧面，分别设置有两个弹性装置300。在一些其他的实施例中，在惯性体沿X轴方向的两个侧面，可以分别有若干个所述弹性装置，用于连接所述固定基体和所述惯性体。In the embodiment of the present disclosure, two elastic devices 300 are respectively provided on the two sides of the inertial body along the X-axis direction. In some other embodiments, there may be a plurality of elastic devices respectively on the two sides of the inertial body along the X-axis direction, for connecting the fixed base and the inertial body.
在一些实施例中，所述弹性装置可以为折线型或者U型装置，沿X方向具有弹性。例如在一具体的实施例中，所述光电感应惯性传感器可以包括4个U型弹性装置，分别设置在惯性体沿X轴方向的相对两侧，即在惯性体沿X轴方向相对应两侧的每一个侧面的边缘设置2个弹性装置，所述U型弹性装置的开口端分别连接惯性体和固定基体。在一些实施例中，所述光波导管的材料可以为硅化合物或金属围成的管状空腔。在一些其他的实施例中，所述光波导管可以为透明半导体材料或光纤In some embodiments, the elastic device may be a zigzag or U-shaped device, which is elastic along the X direction. For example, in a specific embodiment, the photoelectric inertial sensor may include four U-shaped elastic devices, which are respectively arranged on opposite sides of the inertial body along the X-axis direction, that is, two elastic devices are arranged on the edge of each side of the inertial body on the two sides corresponding to each other along the X-axis direction, and the open ends of the U-shaped elastic devices are respectively connected to the inertial body and the fixed base. In some embodiments, the material of the optical waveguide may be a tubular cavity surrounded by silicon compounds or metals. In some other embodiments, the optical waveguide may be a transparent semiconductor material or an optical fiber.
图3示出了根据本公开的一个实施例的光电感应惯性传感器沿B-B’的剖面示意图。在本公开实施例中，如图3所示，光电感应惯性传感器10还包括第一反射装置220和第二反射装置230，第一反射装置220被设置在光导装置130和光波导管210之间，用来将光导装置130中沿Z轴方向的出射光束反射至沿所述光波导管210的方向，使得光导装置130的出射光束可以射入光波导管210，并在光波导管210中传输；第二反射装置230被设置在光电感应单元120和光波导管210之间，用于将光波导管210中沿Y轴方向的出射光束反射至沿所述光电感应单元120的方向，使得光波导管210中的出射光束可以被光电感应单元120接收。FIG3 shows a schematic cross-sectional view of a photoelectric inertial sensor along B-B' according to an embodiment of the present disclosure. In the embodiment of the present disclosure, as shown in FIG3 , the photoelectric inertial sensor 10 further includes a first reflecting device 220 and a second reflecting device 230. The first reflecting device 220 is disposed between the light guide device 130 and the optical waveguide 210, and is used to reflect the outgoing light beam along the Z-axis direction of the light guide device 130 to the direction along the optical waveguide 210, so that the outgoing light beam of the light guide device 130 can be injected into the optical waveguide 210 and transmitted in the optical waveguide 210; the second reflecting device 230 is disposed between the photoelectric sensing unit 120 and the optical waveguide 210, and is used to reflect the outgoing light beam along the Y-axis direction of the optical waveguide 210 to the direction along the photoelectric sensing unit 120, so that the outgoing light beam in the optical waveguide 210 can be received by the photoelectric sensing unit 120.
具体的，在本实施例中，第一反射装置220设置在光波导管210与光导装置130相对应的一端，具体可以为一个金属反射膜层，反射面与惯性体200的第一表面呈45°角，从而将沿Z轴方向的入射光束90°转向后反射至沿Y轴方向，从光波导管210的一端射入，最终从光波导管210的另一端射出。在光波导管210的另一端设置有第二反射装置230，与光电感应单元120相对应，具体可以为一个金属反射膜层，反射面与惯性体200的第一表面呈45°角，从而将光波导管210中沿Y轴方向的出射光束90°转向后反射至光电感应单元120。Specifically, in this embodiment, the first reflection device 220 is disposed at one end of the optical waveguide 210 corresponding to the light guide device 130, and can be specifically a metal reflection film layer, and the reflection surface is at a 45° angle with the first surface of the inertial body 200, so that the incident light beam along the Z-axis direction is deflected by 90° and then reflected to the Y-axis direction, entering from one end of the optical waveguide 210, and finally emitted from the other end of the optical waveguide 210. A second reflection device 230 is disposed at the other end of the optical waveguide 210, corresponding to the photoelectric sensing unit 120, and can be specifically a metal reflection film layer, and the reflection surface is at a 45° angle with the first surface of the inertial body 200, so that the outgoing light beam along the Y-axis direction in the optical waveguide 210 is deflected by 90° and then reflected to the photoelectric sensing unit 120.
在一些实施例中，所述第一反射装置和所述第二反射装置的材料可以为金属和/或介电质。In some embodiments, the materials of the first reflecting device and the second reflecting device may be metal and/or dielectric.
在一些实施例中，所述固定基体上可以设置有若干个所述光导装置和所述光电感应单元。例如在图1所示的具体实施例中，在固定基体100的和惯性体200第一表面相对的第一内表面具有沿X轴方向设置的四个光电感应单元及四个光导装置。在另一实施例中，所述光导装置可以设置为沿X轴方向的条状光导装置，当所述惯性体相对于所述固定基体沿X轴振动时，所述条状光导装置可以确保有部分光束能够射入所述光波导管。在又一其他实施例中，所述光导装置可以包括若干个沿X轴方向设置的光导单元阵列，当所述惯性体沿X轴方向振动，则至少有一个所述光导单元的光束入射光波导管。在不同的实施例中，所述光导装置和所述光电感应单元的数量和形状可以随不同光电感应惯性传感器的规格进行调整，在本公开实施例中不对此进行限制。In some embodiments, a plurality of the light guide devices and the photoelectric sensing units may be provided on the fixed base. For example, in the specific embodiment shown in FIG1 , the first inner surface of the fixed base 100 opposite to the first surface of the inertial body 200 has four photoelectric sensing units and four light guide devices arranged along the X-axis direction. In another embodiment, the light guide device may be provided as a strip light guide device along the X-axis direction. When the inertial body vibrates along the X-axis relative to the fixed base, the strip light guide device may ensure that part of the light beam can be injected into the optical waveguide. In yet another embodiment, the light guide device may include an array of a plurality of light guide units arranged along the X-axis direction. When the inertial body vibrates along the X-axis direction, the light beam of at least one of the light guide units enters the optical waveguide. In different embodiments, the number and shape of the light guide devices and the photoelectric sensing units may be adjusted according to the specifications of different photoelectric sensing inertial sensors, which is not limited in the embodiments disclosed herein.
在一些实施例中，所述光电感应单元可以包括至少一个光电二极管，以及一个与所述光电二极管相连的晶体管，所述晶体管用于对所述光电二极管所产生的光电子信号进行开关或者放大。In some embodiments, the photoelectric sensing unit may include at least one photodiode and a transistor connected to the photodiode, wherein the transistor is used to switch or amplify the photoelectron signal generated by the photodiode.
在一些实施例中，所述空腔内填充有润滑气体和/或润滑液体。In some embodiments, the cavity is filled with lubricating gas and/or lubricating liquid.
在一些实施例中，所述固定基体和所述惯性体的材料可以为硅化合物，所述光导装置的材料可以为硅化合物或者金属。In some embodiments, the material of the fixed base and the inertial body may be a silicon compound, and the material of the light guide device may be a silicon compound or a metal.
本公开实施例提供的光电感应惯性传感器，采用了光电感应技术，大大降低了最低感测到的加速度，从而扩大了感测范围；具有直接、精确和无限制的优点，同时具有抗电磁干扰强的特性，不受算法等因素的影响。The photoelectric inertial sensor provided in the embodiment of the present disclosure adopts photoelectric induction technology, which greatly reduces the minimum sensed acceleration, thereby expanding the sensing range; it has the advantages of being direct, accurate and unlimited, and at the same time has strong resistance to electromagnetic interference and is not affected by factors such as algorithms.
本公开实施例还提供了一种光电感应惯性传感器的制造方法，图4示出了本公开实施例的光电感应惯性传感器制造方法的流程示意图，图5a-图5f示出了根据本公开实施例的制造方法形成光电感应惯性传感器过程的沿A-A’的剖面结构示意图。下面结合图4以及图5a至图5f，对本发明的光电感应惯性传感器的制造方法进行详细说明。The present disclosure also provides a method for manufacturing a photoelectric inertial sensor. FIG4 shows a schematic flow chart of the method for manufacturing a photoelectric inertial sensor according to the present disclosure. FIG5a to FIG5f show schematic cross-sectional structures along A-A' of the process of forming a photoelectric inertial sensor according to the manufacturing method of the present disclosure. The method for manufacturing a photoelectric inertial sensor according to the present disclosure is described in detail below in conjunction with FIG4 and FIG5a to FIG5f.
本发明的光电感应惯性传感器的制造方法，具体包括以下步骤：The manufacturing method of the photoelectric inertial sensor of the present invention specifically comprises the following steps:
S1：提供第一基板。S1: providing a first substrate.
S3：刻蚀第一基板，形成第一凹槽。S3: etching the first substrate to form a first groove.
S5：在第一凹槽内形成第一牺牲层。S5: forming a first sacrificial layer in the first groove.
如图5a，在本实施例中，首先形成第一基板500，第一基板500为硅基板。接着，在第一基板500上刻蚀出第一凹槽，在所述第一凹槽中形成第一牺牲层510；第一牺牲层510的材料可以为光刻胶材料。As shown in FIG5a , in this embodiment, a first substrate 500 is first formed, and the first substrate 500 is a silicon substrate. Then, a first groove is etched on the first substrate 500 , and a first sacrificial layer 510 is formed in the first groove; the material of the first sacrificial layer 510 may be a photoresist material.
在一些其他实施例中，所述第一基板可以为其他材料的半导体基板。In some other embodiments, the first substrate may be a semiconductor substrate made of other materials.
S7：刻蚀第一牺牲层，形成第二凹槽，以及连通第一基板和第二凹槽的第三凹槽，第二凹槽对应惯性体，第三凹槽对应弹性装置。S7: etching the first sacrificial layer to form a second groove and a third groove connecting the first substrate and the second groove, the second groove corresponds to the inertial body, and the third groove corresponds to the elastic device.
S9：在第二凹槽和第三凹槽内形成第一半导体层，第二凹槽内的第一半导体层用于形成惯性体，第三凹槽内的第一半导体层用于形成弹性装置。S9: forming a first semiconductor layer in the second groove and the third groove, wherein the first semiconductor layer in the second groove is used to form an inertial body, and the first semiconductor layer in the third groove is used to form an elastic device.
参照图5b，采用刻蚀工艺在第一牺牲层510上形成第二凹槽和第三凹槽，所述第三凹槽连通第一基板500和所述第二凹槽，其中，所述第三凹槽为沿着X轴方向的折线形凹槽，在图5b中仅体现所述第三凹槽沿B-B’的剖面示意图。接着，在所述第二凹槽和所述第三凹槽内形成第一半导体层，所述第二凹槽内的第一半导体层用于形成惯性体，所述第三凹槽内的第一半导体层用于形成弹性装置520。Referring to Fig. 5b, a second groove and a third groove are formed on the first sacrificial layer 510 by an etching process, wherein the third groove connects the first substrate 500 and the second groove, wherein the third groove is a zigzag groove along the X-axis direction, and Fig. 5b only shows the cross-sectional schematic diagram of the third groove along B-B'. Next, a first semiconductor layer is formed in the second groove and the third groove, wherein the first semiconductor layer in the second groove is used to form an inertial body, and the first semiconductor layer in the third groove is used to form an elastic device 520.
在本公开实施例中，弹性装置520为折线型结构。在一些其他实施例中，也可以设置沿X方向具有弹性的U型弹性装置。In the embodiment of the present disclosure, the elastic device 520 is a folded line structure. In some other embodiments, a U-shaped elastic device having elasticity along the X direction may also be provided.
在一些实施例中，所述第一半导体层的材料可以为氮化硅、氧化硅等。In some embodiments, the material of the first semiconductor layer may be silicon nitride, silicon oxide, or the like.
S11：在所述第一半导体层表面形成沿Y轴方向的光波导管。S11: forming an optical waveguide along the Y-axis direction on the surface of the first semiconductor layer.
具体地，图6示出了根据本公开的制造方法制备光电感应惯性传感器过程的形成光波导管的沿B-B’的剖面结构示意图。结合图5c和图6，先在第二凹槽内的第一半导体层表面形成沿Y轴方向的第一金属层531。进一步，分别在第一金属层531两端形成与第一金属层531呈45°角的反射层532和533。之后，在第一金属层531和反射层532、533表面沉积透明导光介质534，再刻蚀导光介质534形成沟槽，用金属填充该沟槽，在透明导光介质534表面形成第二金属层535，从而形成光波导管530。Specifically, FIG6 shows a schematic diagram of the cross-sectional structure along B-B' of the optical waveguide formed in the process of preparing the photoelectric inertial sensor according to the manufacturing method of the present disclosure. In combination with FIG5c and FIG6, a first metal layer 531 along the Y-axis direction is first formed on the surface of the first semiconductor layer in the second groove. Further, reflective layers 532 and 533 are formed at both ends of the first metal layer 531 at an angle of 45° to the first metal layer 531. Afterwards, a transparent light-guiding medium 534 is deposited on the surface of the first metal layer 531 and the reflective layers 532 and 533, and then the light-guiding medium 534 is etched to form a groove, the groove is filled with metal, and a second metal layer 535 is formed on the surface of the transparent light-guiding medium 534, thereby forming an optical waveguide 530.
在本公开实施例中，第二凹槽内的第一半导体层和光波导管530共同形成惯性体540。In the embodiment of the present disclosure, the first semiconductor layer and the optical waveguide 530 in the second groove together form an inertial body 540 .
在一些实施例中，所述反射层可以通过在形成所述第一金属层前刻蚀第二凹槽内的第一半导体层形成一个斜角，从而在沉积所述第一金属层的过程中一并形成。In some embodiments, the reflective layer may be formed during the process of depositing the first metal layer by etching the first semiconductor layer in the second groove to form an oblique angle before forming the first metal layer.
在一些实施例中，所述第一金属层和所述第二金属层的材料可以为铜、铝等。在其他实施例中，也可以直接铺设光纤来形成所述光波导管。In some embodiments, the materials of the first metal layer and the second metal layer may be copper, aluminum, etc. In other embodiments, optical fibers may be directly laid to form the optical waveguide.
S13：形成第二牺牲层，所述第二牺牲层完全覆盖所述惯性体、所述弹性装置和所述第一牺牲层。S13: forming a second sacrificial layer, wherein the second sacrificial layer completely covers the inertial body, the elastic device and the first sacrificial layer.
S15：在所述第二牺牲层表面形成第二半导体层。S15: forming a second semiconductor layer on the surface of the second sacrificial layer.
步骤S13-S15可以参照图5d。先在惯性体540、弹性装置520和第一牺牲层510表面形成第二牺牲层550；第二牺牲层550的材料可以为光刻胶材料。之后，在第二牺牲层550上形成第二半导体层560，使第二半导体层560完全覆盖第二牺牲层550和第一基板500。Steps S13-S15 may refer to FIG. 5d. First, a second sacrificial layer 550 is formed on the surface of the inertial body 540, the elastic device 520 and the first sacrificial layer 510; the material of the second sacrificial layer 550 may be a photoresist material. Then, a second semiconductor layer 560 is formed on the second sacrificial layer 550, so that the second semiconductor layer 560 completely covers the second sacrificial layer 550 and the first substrate 500.
S17：在第二半导体层中形成光电感应单元及光导装置。S17: forming a photoelectric sensing unit and a photoconductive device in the second semiconductor layer.
具体的，在第二半导体层560中沿X轴方向形成若干个光电感应单元及光导装置。Specifically, a plurality of photoelectric sensing units and photoconductive devices are formed in the second semiconductor layer 560 along the X-axis direction.
S19：刻蚀所述第二半导体层，形成与所述第二牺牲层连通的通孔。S19: etching the second semiconductor layer to form a through hole connected to the second sacrificial layer.
在本公开实施例中，如图5e，在第二半导体层560表面进行刻蚀，形成若干个与第二牺牲层560连通的通孔570。In the embodiment of the present disclosure, as shown in FIG. 5 e , etching is performed on the surface of the second semiconductor layer 560 to form a plurality of through holes 570 communicating with the second sacrificial layer 560 .
S21：去除所述第一牺牲层和第二牺牲层，形成空腔，填充所述通孔。S21: removing the first sacrificial layer and the second sacrificial layer to form a cavity and fill the through hole.
参照图5f，通过通孔570刻蚀第一牺牲层510和第二牺牲层550，形成空腔580。之后，通过在第二半导体层560上形成覆盖层590来填充通孔570。5f, the first sacrificial layer 510 and the second sacrificial layer 550 are etched through the through hole 570 to form a cavity 580. Thereafter, the through hole 570 is filled by forming a capping layer 590 on the second semiconductor layer 560.
在一些实施例中，可以通过片体粘合、键合、物理气相沉积、化学气相沉积方法中之一或任何组合形成覆盖层。In some embodiments, the cover layer may be formed by one or any combination of sheet bonding, bonding, physical vapor deposition, and chemical vapor deposition methods.
在一些实施例中，在填充通孔之前还可以向空腔580内填充有润滑气体、润滑液体或气液混合。In some embodiments, lubricating gas, lubricating liquid, or a mixture of gas and liquid may be filled into the cavity 580 before filling the through hole.
如上所述，根据本公开实施例的一种光电感应惯性传感器的制造方法，形成的光电感应惯性传感器采用了光电感应技术，降低了最低感测到的加速度，扩大了感测范围，具有直接、精确和无限制的优点，同时具有抗电磁干扰强的特性，不受算法等因素的影响。As described above, according to a method for manufacturing a photoelectric inertial sensor in an embodiment of the present disclosure, the formed photoelectric inertial sensor adopts photoelectric sensing technology, reduces the minimum sensed acceleration, expands the sensing range, has the advantages of being direct, precise and unlimited, and at the same time has strong resistance to electromagnetic interference and is not affected by factors such as algorithms.
以上所述仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410858610.9ACN118746698B (en) | 2024-06-28 | 2024-06-28 | Photoelectric induction acceleration sensor and manufacturing method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410858610.9ACN118746698B (en) | 2024-06-28 | 2024-06-28 | Photoelectric induction acceleration sensor and manufacturing method thereof |
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| CN118746698Atrue CN118746698A (en) | 2024-10-08 |
| CN118746698B CN118746698B (en) | 2025-05-13 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410858610.9AActiveCN118746698B (en) | 2024-06-28 | 2024-06-28 | Photoelectric induction acceleration sensor and manufacturing method thereof |
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| CN (1) | CN118746698B (en) |
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