技术领域Technical Field
本发明涉及多层倒装芯片堆叠与一体化键合工艺技术领域。更具体的说是一种多层倒装芯片高柔顺性堆叠与一体化键合装置及方法。The present invention relates to the technical field of multi-layer flip chip stacking and integrated bonding process, and more specifically to a multi-layer flip chip high-flexibility stacking and integrated bonding device and method.
背景技术Background Art
倒装芯片是一种将芯片朝下放置并直接安装在硅片基板上的技术，多层倒装芯片则是在单层倒装芯片的基础上，通过多次堆叠和键合，形成多层电路结构。传统多层芯片堆叠封装通常采用自下而上的堆叠顺序进行封装，即堆叠一层键合一层，键合完成后堆叠下一层，然后再进行键合，以此循环往复，直至完成整体键合。Flip chip is a technology that places the chip face down and directly mounts it on a silicon wafer substrate. Multi-layer flip chip is based on a single-layer flip chip, and is stacked and bonded multiple times to form a multi-layer circuit structure. Traditional multi-layer chip stacking packaging usually uses a bottom-up stacking sequence for packaging, that is, stacking one layer and bonding one layer, and after bonding is completed, stacking the next layer, and then bonding again, and repeating this cycle until the overall bonding is completed.
此类键合方法使得顶层芯片的焊点还未完全键合的情况下，最底部芯片焊点由于经历多次热循环导致其焊点产生裂纹，进而导致整体封装结构键合强度较预期弱，且随着堆叠层数的增加，该问题会更加严重。并且由于堆叠一次，键合一次，键合次数与堆叠层数呈线性增加，这使得整体封装效率更低，且整体的可靠性更低。目前实际生产中使用单个直线电机控制键合头7多次加热芯片的方法存在不足之处，即由于多次加热造成的整体结构可靠性低与键合强度较弱的问题，具体表现为芯片凸点节距减小到150微米以下时，反复受热极易导致相邻焊点由于多次融化，由于距离较近易发生桥联；且由于已焊接部分反复受挤压，芯片成品易产生虚焊、焊点内部空洞、芯片凸点的共面性差的状况，以及多次进行加热焊接工序存在浪费工时与资源的问题，此类方法在用于多层倒装芯片的生产时，难以保证产品结构的可靠性与良品率。This type of bonding method causes the solder joints of the bottom chip to crack due to multiple thermal cycles when the solder joints of the top chip are not fully bonded, which in turn causes the bonding strength of the overall package structure to be weaker than expected, and this problem will become more serious as the number of stacked layers increases. And because of stacking once and bonding once, the number of bonding times increases linearly with the number of stacked layers, which makes the overall packaging efficiency lower and the overall reliability lower. At present, the method of using a single linear motor to control the bonding head 7 to heat the chip multiple times in actual production has shortcomings, namely, the problem of low overall structural reliability and weak bonding strength caused by multiple heating, which is specifically manifested in that when the chip bump pitch is reduced to less than 150 microns, repeated heating can easily cause adjacent solder joints to melt multiple times, and bridging is easy to occur due to the close distance; and because the welded part is repeatedly squeezed, the finished chip is prone to cold solder joints, internal voids in the solder joints, and poor coplanarity of the chip bumps, and there is a problem of wasting time and resources in the heating and welding process for multiple times. When this method is used for the production of multi-layer flip chips, it is difficult to ensure the reliability and yield of the product structure.
采用多层高柔顺堆叠并结合一体化键合的方式，能够减少多层芯片热循环次数，提高芯片组合的可靠性。但硅芯片属于硬脆结构且减薄后的厚度只有几十微米，对堆叠压力的柔顺性提出了严格要求；此外，键合过程中焊点高度会随焊料的熔化降低，进而导致键合压力突变、位置窜动等缺陷。The use of multi-layer high-compliance stacking combined with integrated bonding can reduce the number of thermal cycles of multi-layer chips and improve the reliability of chip combinations. However, silicon chips are hard and brittle structures, and the thickness after thinning is only tens of microns, which places strict requirements on the flexibility of stacking pressure; in addition, during the bonding process, the height of the solder joint will decrease as the solder melts, which will lead to defects such as sudden changes in bonding pressure and position movement.
发明内容Summary of the invention
本发明提供一种多层倒装芯片高柔顺性堆叠与一体化键合装置及方法，目的是可以实现芯片高柔顺性堆叠与多层芯片的一体化键合。The present invention provides a multi-layer flip chip high-flexibility stacking and integrated bonding device and method, aiming to achieve chip high-flexibility stacking and integrated bonding of multi-layer chips.
上述目的通过以下技术方案来实现：The above purpose is achieved through the following technical solutions:
一种多层倒装芯片高柔顺性堆叠与一体化键合装置，包括键合头加热机构，以及驱动键合头位置的微观驱动装置，以及驱动微观驱动装置位置的宏观驱动装置，其特征在于，键合头加热机构上安装有提供真空吸力的气管。A multi-layer flip chip high-flexibility stacking and integrated bonding device includes a bonding head heating mechanism, a micro-driving device for driving the position of the bonding head, and a macro-driving device for driving the position of the micro-driving device. The invention is characterized in that an air pipe for providing vacuum suction is installed on the bonding head heating mechanism.
宏观驱动装置的位移台精度为±2微米，具体型号为KA100，行程100毫米。The translation stage of the macro drive device has an accuracy of ±2 microns, the specific model is KA100, and the stroke is 100 mm.
微观驱动装置最小移动距离为10纳米，具体型号为PSt 150/10/8，行程为80微米。The minimum moving distance of the micro-drive device is 10 nanometers. The specific model is PSt 150/10/8, and the stroke is 80 microns.
所述的多层倒装芯片高柔顺性堆叠与一体化键合装置，陶瓷片与压电陶瓷固定结构通过螺栓连接且绝缘，压电陶瓷固定结构上有贯穿该结构的通槽，其功能是降低该位置的刚度进而放大键合压力对该结构的变形，便于安装在此处的应变片采集应变数据，其原理为当压电陶瓷固定结构的通槽处由于待堆叠芯片与已堆叠芯片发生接触导致变形时，应变片会随着结构变形发生形变，并获取应变数据，通过将该数据上传到上位机中，在上位机中通过换算关系将检测到的应变数据转换成键合压力，实现键合压力的实时检测。In the multi-layer flip chip high-flexibility stacking and integrated bonding device, the ceramic sheet and the piezoelectric ceramic fixing structure are connected and insulated by bolts. The piezoelectric ceramic fixing structure has a through groove that runs through the structure. Its function is to reduce the stiffness of this position and thereby amplify the deformation of the structure caused by the bonding pressure, so that the strain gauge installed here can collect strain data. The principle is that when the through groove of the piezoelectric ceramic fixing structure is deformed due to the contact between the chip to be stacked and the stacked chip, the strain gauge will deform with the deformation of the structure and obtain strain data. By uploading the data to the host computer, the detected strain data is converted into bonding pressure through the conversion relationship in the host computer, thereby realizing real-time detection of the bonding pressure.
键合头加热机构为根据待键合芯片的尺寸进行自行设计，设计原则为键合头加热尺寸大于芯片尺寸，基本面积为其1.5-2倍左右。The bonding head heating mechanism is designed according to the size of the chip to be bonded. The design principle is that the bonding head heating size is larger than the chip size, and the basic area is about 1.5-2 times of the chip size.
所述的陶瓷片主要是用于将键合头与其他金属元件进行绝缘，保证键合头的正负极与脉冲加热电源的正负极相连接而不发生短路。The ceramic sheet is mainly used to insulate the bonding head from other metal components, ensuring that the positive and negative electrodes of the bonding head are connected to the positive and negative electrodes of the pulse heating power supply without short circuit.
一种多层倒装芯片高柔顺性堆叠与一体化键合方法，使用上述键合装置且包括以下步骤：A multi-layer flip chip high-flexibility stacking and integrated bonding method uses the above-mentioned bonding device and includes the following steps:
步骤一：已堆叠芯片放置在平面上，键合头加热机构利用气流产生吸力对待堆叠芯片进行吸取，然后获取各层芯片厚度及宏观驱动装置在世界坐标系中的绝对位置，保证待堆叠芯片通过宏观驱动装置向下运动的终止位置与已堆叠芯片之间的距离为3μm，宏观驱动装置停止动作；Step 1: The stacked chips are placed on a plane, and the bonding head heating mechanism uses airflow to generate suction to absorb the chips to be stacked, and then obtains the thickness of each layer of chips and the absolute position of the macro drive device in the world coordinate system to ensure that the distance between the end position of the chip to be stacked moving downward through the macro drive device and the stacked chip is 3μm, and the macro drive device stops moving;
步骤二：微观驱动装置开始向下移动，带动待堆叠芯片向下移动，当待堆叠芯片与已堆叠芯片发生接触导致应变片形变值>1μm时，微观驱动装置停止移动，气管停止供气，将待堆叠芯片释放并放置在已堆叠芯片上，堆叠完成；Step 2: The micro-drive device starts to move downward, driving the chip to be stacked to move downward. When the chip to be stacked contacts the stacked chip and causes the strain gauge deformation value to be greater than 1 μm, the micro-drive device stops moving, the air pipe stops supplying air, and the chip to be stacked is released and placed on the stacked chip, and the stacking is completed.
步骤三：重复步骤一和步骤二，直至完成所有芯片的堆叠后，此时键合头加热机构紧贴在顶层芯片上方并对键合头加热机构开始加热，在键合过程中对键合压力进行实时监测，当键合压力由于顶层焊点发生融化而骤降时，表明顶层焊点发生了融化，此时微观驱动装置向下移动，带动键合头加热机构下降，其中，键合压力降低数值需结合实际工艺参数，一般为工艺参数的10％以上，下降高度为顶层焊点固态时的高度和顶层焊点预期达到高度的差值，依次循环，当第二层和第三层芯片焊点融化时，依次降低高度，降低键合头对芯片的动态冲击，最终完成键合。Step 3: Repeat steps 1 and 2 until all chips are stacked. At this time, the bonding head heating mechanism is close to the top of the top chip and starts to heat the bonding head heating mechanism. During the bonding process, the bonding pressure is monitored in real time. When the bonding pressure drops suddenly due to the melting of the top solder joint, it indicates that the top solder joint has melted. At this time, the micro-drive device moves downward, driving the bonding head heating mechanism to descend. The bonding pressure reduction value needs to be combined with the actual process parameters, which is generally more than 10% of the process parameters. The descent height is the difference between the height of the top solder joint when it is solid and the expected height of the top solder joint. The cycle is repeated in sequence. When the solder joints of the second and third chips melt, the heights are lowered in sequence to reduce the dynamic impact of the bonding head on the chip, and finally the bonding is completed.
本发明一种多层倒装芯片高柔顺性堆叠与一体化键合装置及方法的有益效果为：The beneficial effects of the multi-layer flip chip high-flexibility stacking and integrated bonding device and method of the present invention are:
本发明的目的是解决多层倒装芯片一体化键合过程中，由于堆叠压力使用不当引起的芯片碎裂或键合空洞以及键合过程中焊料结构刚度变化引起的系统动态冲击问题。通过一体化键合，在制造三维封装多层芯片的过程中，只进行一次加热处理，能降低因反复高温导致的焊点裂纹现象，且降低制造成本，减少工时，提升生产效率。配合压电陶瓷驱动器和宏观位移台控制键合头，能够降低多层芯片键合过程中焊点突然融化导致的动态冲击，从而能避免由于高速运动过程中造成芯片受压，避免芯片破碎、偏移等问题，以及避免焊球破裂和塌陷。The purpose of the present invention is to solve the problem of chip fragmentation or bonding voids caused by improper use of stacking pressure during the integrated bonding of multi-layer flip chips, as well as the problem of system dynamic impact caused by changes in solder structure stiffness during the bonding process. Through integrated bonding, only one heating treatment is performed during the manufacture of three-dimensional packaged multi-layer chips, which can reduce the phenomenon of solder joint cracks caused by repeated high temperatures, reduce manufacturing costs, reduce working hours, and improve production efficiency. In conjunction with a piezoelectric ceramic driver and a macroscopic displacement stage to control the bonding head, the dynamic impact caused by the sudden melting of solder joints during the bonding of multi-layer chips can be reduced, thereby avoiding chip compression during high-speed movement, avoiding chip breakage, offset and other problems, and avoiding solder ball rupture and collapse.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明一种多层倒装芯片高柔顺性堆叠与一体化键合装置结构示意图；FIG1 is a schematic structural diagram of a multi-layer flip chip high-flexibility stacking and integrated bonding device according to the present invention;
图2为多层芯片堆叠过程结构示意图；FIG2 is a schematic diagram of the structure of a multi-layer chip stacking process;
图3为本发明一种多层倒装芯片高柔顺性堆叠与一体化键合方法流程图。FIG3 is a flow chart of a multi-layer flip chip high-flexibility stacking and integrated bonding method of the present invention.
图中：1、键合头转接板；2、压电陶瓷固定结构；3、压电陶瓷驱动器；4、宏观位移台；5、陶瓷片；6、电源正极；7、键合头；8、气管；9、电源负极；10、应变片；11、待堆叠芯片、12、已堆叠芯片。In the figure: 1. Bonding head adapter plate; 2. Piezoelectric ceramic fixing structure; 3. Piezoelectric ceramic driver; 4. Macro displacement stage; 5. Ceramic sheet; 6. Positive power supply; 7. Bonding head; 8. Air pipe; 9. Negative power supply; 10. Strain gauge; 11. Chip to be stacked; 12. Stacked chip.
具体实施方式DETAILED DESCRIPTION
一种多层倒装芯片高柔顺性堆叠与一体化键合装置及方法，包括宏观驱动装置、微观驱动装置、将宏观驱动装置和微观驱动装置连接的宏微观驱动连接结构和键合头加热机构；A multi-layer flip chip high-compliance stacking and integrated bonding device and method, comprising a macro-driving device, a micro-driving device, a macro-micro driving connection structure connecting the macro-driving device and the micro-driving device, and a bonding head heating mechanism;
其中，所述的宏观驱动装置包括宏观位移台，其位于装置最上方，精度为±2微米，行程100毫米，可以实现从微米级到厘米级的高精度运动，The macro-drive device includes a macro-displacement stage, which is located at the top of the device, has an accuracy of ±2 microns and a travel of 100 mm, and can achieve high-precision movement from micron level to centimeter level.
其中，微观驱动装置包括压电陶瓷固定结构2和压电陶瓷驱动器3，压电陶瓷驱动器3用于负责微小尺度的位移，最小移动距离为10纳米，行程为80微米，可以实现纳米级的微观运动，保证待堆叠芯片11与待堆叠芯片12接触压力的精确控制，同时实现键合过程中焊点高度变化的位置补偿。Among them, the micro-driving device includes a piezoelectric ceramic fixed structure 2 and a piezoelectric ceramic driver 3. The piezoelectric ceramic driver 3 is responsible for micro-scale displacement. The minimum moving distance is 10 nanometers and the stroke is 80 microns. It can realize nanometer-level micro-motion, ensure the precise control of the contact pressure between the stacked chip 11 and the stacked chip 12, and realize the position compensation of the height change of the solder joint during the bonding process.
键合头加热机构包括键合头转接板1、压电陶瓷驱动器3、陶瓷片5、电源正极6、键合头7、气管8、电源负极9；The bonding head heating mechanism includes a bonding head adapter plate 1, a piezoelectric ceramic driver 3, a ceramic sheet 5, a positive power supply electrode 6, a bonding head 7, an air pipe 8, and a negative power supply electrode 9;
键合头加热机构负责抓取夹持放置芯片与进行加热焊接。键合头7通过连接的气管8提供的真空吸力实现对待堆叠芯片11的夹取与放置，气管8一端通过陶瓷管连接键合头7处的真吸头，气管8另一端通过真空发生器连接在空气压缩机，电源正极6和电源负极9用于键合头7的供电，在完成堆叠后，键合头7通过脉冲加热的方式对芯片进行加热焊接，一次性完成各层芯片的键合；键合头7的加热线通过键合头7上方的陶瓷片5与压电陶瓷固定结构2之间的绝缘；其中，压电陶瓷驱动器3通过螺栓连接至键合头转接板1，键合头转接板1与陶瓷片5通过螺钉固接，键合头7与陶瓷片5固接。键合头7上设置有吸孔，气管8位于吸孔内，气管8通过陶瓷管与键合头7固接。The bonding head heating mechanism is responsible for grabbing, clamping and placing the chip and performing heating and welding. The bonding head 7 realizes the clamping and placement of the stacked chip 11 through the vacuum suction provided by the connected air pipe 8. One end of the air pipe 8 is connected to the real suction head at the bonding head 7 through a ceramic tube, and the other end of the air pipe 8 is connected to the air compressor through a vacuum generator. The positive pole 6 and the negative pole 9 of the power supply are used to power the bonding head 7. After the stacking is completed, the bonding head 7 heats and welds the chip by pulse heating, and completes the bonding of each layer of chips at one time; the heating wire of the bonding head 7 passes through the insulation between the ceramic sheet 5 above the bonding head 7 and the piezoelectric ceramic fixed structure 2; wherein, the piezoelectric ceramic driver 3 is connected to the bonding head adapter plate 1 by bolts, the bonding head adapter plate 1 and the ceramic sheet 5 are fixed by screws, and the bonding head 7 is fixed to the ceramic sheet 5. A suction hole is provided on the bonding head 7, and the air pipe 8 is located in the suction hole, and the air pipe 8 is fixed to the bonding head 7 through the ceramic tube.
所述的宏微观驱动连接结构为机架，主要是将宏观驱动装置、微观驱动装置、键合头加热机构连接与支撑，压电陶瓷驱动器3固接在压电陶瓷固定结构2上，压电陶瓷固定结构2固接在宏观位移台上；The macro-micro drive connection structure is a frame, which mainly connects and supports the macro drive device, the micro drive device, and the bonding head heating mechanism. The piezoelectric ceramic driver 3 is fixed to the piezoelectric ceramic fixed structure 2, and the piezoelectric ceramic fixed structure 2 is fixed to the macro displacement stage;
其中，陶瓷片5与压电陶瓷固定结构2通过螺栓连接且绝缘，压电陶瓷固定结构2上有贯穿该结构的通槽，其功能是降低该位置的刚度进而放大键合压力对该结构的变形，便于安装在此处的应变片10采集应变数据，其原理为当压电陶瓷固定结构2的通槽处由于待堆叠芯片11与已堆叠芯片12发生接触导致变形时，应变片10会随着结构变形发生形变，并获取应变数据，通过将该数据上传到上位机中，在上位机中通过换算关系将检测到的应变数据转换成键合压力，实现键合压力的实时检测。Among them, the ceramic sheet 5 is connected to the piezoelectric ceramic fixed structure 2 by bolts and is insulated. There is a through groove running through the structure on the piezoelectric ceramic fixed structure 2. Its function is to reduce the stiffness of this position and thereby amplify the deformation of the structure caused by the bonding pressure, so as to facilitate the strain gauge 10 installed here to collect strain data. The principle is that when the through groove of the piezoelectric ceramic fixed structure 2 is deformed due to the contact between the chip 11 to be stacked and the stacked chip 12, the strain gauge 10 will deform with the deformation of the structure and obtain strain data. By uploading the data to the host computer, the detected strain data is converted into bonding pressure through the conversion relationship in the host computer, thereby realizing real-time detection of the bonding pressure.
一种多层倒装芯片高柔顺性堆叠与一体化键合方法包括以下步骤：A multi-layer flip chip high-flexibility stacking and integrated bonding method comprises the following steps:
步骤一：待堆叠芯片12放置在基板上，然后将待堆叠芯片11通过键合头加热机构进行吸取对位，然后控制宏观位移台向下移动，使芯片快速接近基板，到达预定位置后，宏观位移台停止动作。Step 1: Place the chip 12 to be stacked on the substrate, then use the bonding head heating mechanism to absorb and align the chip 11 to be stacked, and then control the macroscopic displacement stage to move downward so that the chip quickly approaches the substrate. After reaching the predetermined position, the macroscopic displacement stage stops moving.
步骤二：宏观位移台完成移动后，待堆叠芯片11与待堆叠芯片12之间的距离为微米级别，此时启动压电陶瓷驱动器3，将待堆叠芯片11移动至待堆叠芯片12上方3μm距离处，此处是考虑宏观位移台精度为2微米，为防止因为误差导致的待堆叠芯片11与待堆叠芯片12过早接触，所以将其移动至堆叠芯片上方5μm距离处，使然后控制压电陶瓷驱动器3进行微观输出，其精度为10nm，待堆叠芯片11微小缓慢向下移动，通过力学传感器或高精度测距传感器等其手段，实现待堆叠芯片11与待堆叠芯片12是否发生接触，当发生接触时，压电陶瓷驱动器3则停止移动，堆叠完成后关闭真空吸头，释放芯片，重复步骤一和步骤二，以使压电陶瓷驱动器3向上移动，宏观位移台向上移动，再进行下一层待堆叠芯片11的吸取及堆叠，直至完成多层芯片的堆叠，通过将宏微复合运动进行结合，能够实现多层芯片的高柔顺性堆叠。Step 2: After the macroscopic displacement stage completes the movement, the distance between the chip 11 to be stacked and the chip 12 to be stacked is at the micron level. At this time, the piezoelectric ceramic driver 3 is started to move the chip 11 to be stacked to a distance of 3 μm above the chip 12 to be stacked. Here, the precision of the macroscopic displacement stage is 2 microns. In order to prevent the chip 11 to be stacked from contacting the chip 12 to be stacked prematurely due to errors, it is moved to a distance of 5 μm above the stacked chip, so that the piezoelectric ceramic driver 3 is then controlled to perform microscopic output with a precision of 10 nm. The chip 11 to be stacked moves downward slightly and slowly. Through mechanical sensors or high-precision ranging sensors, it is determined whether the chip 11 to be stacked and the chip 12 to be stacked are in contact. When contact occurs, the piezoelectric ceramic driver 3 stops moving. After stacking is completed, the vacuum suction head is closed to release the chip. Steps 1 and 2 are repeated to move the piezoelectric ceramic driver 3 upward, the macroscopic displacement stage moves upward, and then the next layer of chip 11 to be stacked is sucked and stacked until the stacking of multiple layers of chips is completed. By combining macro-micro composite motions, high-compliance stacking of multiple layers of chips can be achieved.
步骤三：当多层芯片完成堆叠后，在完成所有芯片的堆叠后，此时键合头7紧贴在顶层芯片上方，然后通过对键合头7正负极通电，按照预先设定的工艺曲线进行脉冲加热，在键合过程中，当键合温度达到顶层芯片焊点熔化温度时，采用前馈+PID混合控制方法驱动压电陶瓷驱动器3，实现键合高度缓慢、均匀下降，降低动态冲击；并且随着合金金属层逐步形成，加大键合压力；当中间层芯片焊点熔化温度时，重复上述操作，使键合界面快速发育，提高键合过程的稳定性与可靠性。通过键合头7提供键合温度与键合压力，由于芯片堆叠内存在温度梯度，不同层焊点熔化时间不一致，通过包括但不限于红外热波图像识别技术能够捕捉焊点熔化时间，通过控制压电陶瓷驱动器3下降特定高度，弥补由于芯片堆叠结构刚度变化带来的键合压力突变，保证多层芯片堆叠一体化键合过程的可靠性。Step 3: After the multi-layer chip is stacked, after all the chips are stacked, the bonding head 7 is placed close to the top chip, and then the positive and negative electrodes of the bonding head 7 are energized to perform pulse heating according to the pre-set process curve. During the bonding process, when the bonding temperature reaches the melting temperature of the solder joint of the top chip, the piezoelectric ceramic driver 3 is driven by the feedforward + PID hybrid control method to achieve a slow and uniform decrease in the bonding height and reduce dynamic impact; and as the alloy metal layer is gradually formed, the bonding pressure is increased; when the solder joint of the middle layer chip melts, the above operation is repeated to rapidly develop the bonding interface and improve the stability and reliability of the bonding process. The bonding head 7 provides the bonding temperature and bonding pressure. Due to the temperature gradient in the chip stack, the melting time of the solder joints of different layers is inconsistent. The melting time of the solder joints can be captured by including but not limited to infrared thermal wave image recognition technology. By controlling the piezoelectric ceramic driver 3 to drop to a specific height, the bonding pressure mutation caused by the change in the rigidity of the chip stacking structure is compensated, and the reliability of the integrated bonding process of the multi-layer chip stacking is ensured.
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