技术领域Technical Field
本发明属于半导体材料制备领域，具体涉及一种在硅衬底上制备氧化镓薄膜的方法。The invention belongs to the field of semiconductor material preparation, and in particular relates to a method for preparing a gallium oxide film on a silicon substrate.
背景技术Background technique
近年来，物化性能优异的超宽禁带半导体氧化镓(Ga2O3)引起了科研界和产业界的广泛关注。氧化镓的带隙值宽达4.5-5.1eV，具有高达8MV·cm-1的抗击穿特性，用以表征功率器件电学特性的巴利加优值高达3214.1，是制作下一代高功率电子器件的优异材料。另一方面，氧化镓的光响应峰值直接对应于日盲紫外波段，且在吸收边附近的吸收系数高达105cm-1，在光电器件领域存在巨大的潜在应用价值。In recent years, the ultra-wide bandgap semiconductor gallium oxide (Ga2 O3 ) with excellent physical and chemical properties has attracted widespread attention from the scientific research community and the industry. The bandgap value of gallium oxide is as wide as 4.5-5.1eV, and it has a breakdown resistance of up to 8MV·cm-1 . The Baliga figure of merit used to characterize the electrical properties of power devices is as high as 3214.1. It is an excellent material for making the next generation of high-power electronic devices. On the other hand, the photoresponse peak of gallium oxide directly corresponds to the solar-blind ultraviolet band, and the absorption coefficient near the absorption edge is as high as 105 cm-1 , which has great potential application value in the field of optoelectronic devices.
薄膜形态是半导体材料与微电子工艺最为兼容的结构形态，氧化镓薄膜可用于功率器件的沟道层或光电器件的光吸收层。氧化镓薄膜的制备主要分为同质外延和异质外延。由于不存在晶格失配和热失配，同质外延的氧化镓薄膜往往质量较高，但当前氧化镓衬底价格高昂且P型掺杂问题未能解决，制作电子器件时存在较大的限制性。异质外延氧化镓薄膜的衬底主要有蓝宝石、碳化硅和硅等。相比于蓝宝石和碳化硅，硅材料作为衬底具有大尺寸、成本低、热导率高和与硅基微电子器件集成等不可比拟的优点。然而，硅与氧化镓之间具有较大的晶格失配和热失配，在硅衬底上生长的氧化镓薄膜存在较大应力，易形成缺陷并在表面出现裂纹。Thin film morphology is the most compatible structural morphology between semiconductor materials and microelectronic processes. Gallium oxide thin films can be used in the channel layer of power devices or the light absorption layer of optoelectronic devices. The preparation of gallium oxide thin films is mainly divided into homoepitaxial and heteroepitaxial. Since there is no lattice mismatch and thermal mismatch, homoepitaxial gallium oxide thin films are often of higher quality, but the current gallium oxide substrate is expensive and the P-type doping problem has not been solved, which has great limitations when making electronic devices. The substrates for heteroepitaxial gallium oxide thin films mainly include sapphire, silicon carbide and silicon. Compared with sapphire and silicon carbide, silicon material as a substrate has incomparable advantages such as large size, low cost, high thermal conductivity and integration with silicon-based microelectronic devices. However, there is a large lattice mismatch and thermal mismatch between silicon and gallium oxide. Gallium oxide films grown on silicon substrates have large stress, which is easy to form defects and cracks on the surface.
缓冲层工艺是优化硅衬底上氧化镓薄膜生长质量的常用方法。然而，目前均采用两种方法或两种不连续的工艺分别制备缓冲层和氧化镓薄膜层，这种方式存在两大缺陷。第一是工艺操作复杂，缓冲层与氧化镓薄膜的制备过程中存在间歇，甚至需要两种薄膜生长设备分别制备缓冲层和氧化镓薄膜，形成较大程度的时间和成本浪费。第二是在缓冲层制备结束等待氧化镓薄膜制备的过程中会发生界面态的改变，如果需要转移样品，更易形成表面污染，影响了氧化镓薄膜的生长质量和相应微电子器件的应用前景。The buffer layer process is a common method to optimize the growth quality of gallium oxide thin films on silicon substrates. However, currently two methods or two discontinuous processes are used to prepare the buffer layer and the gallium oxide thin film layer respectively. This method has two major defects. The first is that the process operation is complicated. There are intervals in the preparation of the buffer layer and the gallium oxide thin film. Even two thin film growth equipments are required to prepare the buffer layer and the gallium oxide thin film respectively, resulting in a large degree of time and cost waste. The second is that the interface state will change during the process of waiting for the preparation of the gallium oxide thin film after the buffer layer preparation is completed. If the sample needs to be transferred, surface contamination is more likely to occur, which affects the growth quality of the gallium oxide thin film and the application prospects of the corresponding microelectronic devices.
发明内容Summary of the invention
本发明针对现有技术中存在的问题，提出一种在硅衬底上制备氧化镓薄膜的方法，本发明采用连续工艺在硅衬底上制备氧化铪缓冲层和氧化镓薄膜层，简化了工艺操作流程，并避免了转移过程中缓冲层的表面污染问题，有益于提高相应微电子器件的性能。The present invention aims at the problems existing in the prior art and proposes a method for preparing a gallium oxide thin film on a silicon substrate. The present invention adopts a continuous process to prepare a hafnium oxide buffer layer and a gallium oxide thin film layer on a silicon substrate, which simplifies the process operation flow and avoids the surface contamination problem of the buffer layer during the transfer process, which is beneficial to improving the performance of the corresponding microelectronic devices.
为了实现上述目的，本发明通过以下技术方案予以实现：一种在硅衬底上制备氧化镓薄膜的方法，按照以下方法进行：In order to achieve the above object, the present invention is implemented by the following technical scheme: A method for preparing a gallium oxide thin film on a silicon substrate is carried out according to the following method:
步骤1)清洗硅衬底，并将清洗后的硅衬底放入原子层沉积腔室内；Step 1) cleaning the silicon substrate and placing the cleaned silicon substrate into an atomic layer deposition chamber;
步骤2)调整原子层沉积腔室内真空度＜1Torr，将硅衬底温度升温至230℃-280℃，采用原子层沉积法的连续工艺依次制备氧化铪缓冲层和氧化镓薄膜层；Step 2) adjusting the vacuum degree in the atomic layer deposition chamber to less than 1 Torr, raising the temperature of the silicon substrate to 230° C.-280° C., and sequentially preparing a hafnium oxide buffer layer and a gallium oxide thin film layer by a continuous process of atomic layer deposition;
步骤3)采用高温退火，即得到硅衬底上高质量的氧化镓薄膜。Step 3) high temperature annealing is performed to obtain a high-quality gallium oxide film on the silicon substrate.
进一步的，所述氧化铪缓冲层的厚度在30nm到70nm。Furthermore, the thickness of the hafnium oxide buffer layer is between 30 nm and 70 nm.
进一步的，所述氧化镓薄膜层的厚度在50nm到200nm。Furthermore, the gallium oxide thin film layer has a thickness of 50 nm to 200 nm.
进一步的，所述步骤2)中原子层沉积法连续工艺中包含300-700循环周期的氧化铪缓冲层和1000-4000循环周期的氧化镓薄膜层。Furthermore, the atomic layer deposition continuous process in step 2) includes 300-700 cycles of a hafnium oxide buffer layer and 1000-4000 cycles of a gallium oxide thin film layer.
进一步的，所述氧化铪缓冲层的每个周期包含四个脉冲，采用TEMAH为源的铪源脉冲，采用臭氧为源的氧源脉冲，利用氩气进行吹扫脉冲。Furthermore, each cycle of the hafnium oxide buffer layer includes four pulses, a hafnium source pulse using TEMAH as a source, an oxygen source pulse using ozone as a source, and a purge pulse using argon gas.
进一步的，所述氧化镓薄膜层的每个周期包含四个脉冲，采用TEG或TMG为源的镓源脉冲，采用臭氧为源的氧源脉冲，利用氩气进行吹扫脉冲。Furthermore, each cycle of the gallium oxide thin film layer includes four pulses, a gallium source pulse using TEG or TMG as a source, an oxygen source pulse using ozone as a source, and a purge pulse using argon gas.
进一步的，所述步骤(3)中高温退火的具体工艺为：利用退火炉进行退火，退火氛围为氮气，温度为900℃，退火时间为10min。Furthermore, the specific process of high temperature annealing in step (3) is: annealing is performed in an annealing furnace, the annealing atmosphere is nitrogen, the temperature is 900° C., and the annealing time is 10 minutes.
进一步的，所述步骤1)中硅衬底清洗的具体步骤为：先用氢氟酸去除硅表面的二氧化硅层，然后依次用丙酮、无水乙醇和去离子水分别超声清洗10分钟。Furthermore, the specific steps of cleaning the silicon substrate in step 1) are: firstly, using hydrofluoric acid to remove the silicon dioxide layer on the silicon surface, and then ultrasonically cleaning with acetone, anhydrous ethanol and deionized water for 10 minutes respectively.
与现有技术相比，本发明的有益效果为：Compared with the prior art, the present invention has the following beneficial effects:
1、本发明通过设置原子层沉积法的工艺参数，采用连续工艺在硅衬底上制备氧化铪缓冲层和氧化镓薄膜层，简化了工艺操作流程，并避免了转移过程中缓冲层的表面污染问题。氧化铪的缓冲层作用减缓了硅与氧化镓之间的晶格失配和热失配，可以形成在硅衬底上的高质量氧化镓薄膜，有益于提高相应微电子器件的性能。1. The present invention sets the process parameters of the atomic layer deposition method and adopts a continuous process to prepare a hafnium oxide buffer layer and a gallium oxide thin film layer on a silicon substrate, thereby simplifying the process operation flow and avoiding the surface contamination problem of the buffer layer during the transfer process. The hafnium oxide buffer layer reduces the lattice mismatch and thermal mismatch between silicon and gallium oxide, and can form a high-quality gallium oxide thin film on a silicon substrate, which is beneficial to improving the performance of the corresponding microelectronic devices.
2、本发明选用原子层沉积法的连续工艺制备缓冲层和氧化镓薄膜层，工艺选用氧化铪作为缓冲层，制备过程中控制衬底温度，使其位于铪源与氧源的反应温度窗口与镓源与氧源反应温度窗口的交叉范围内，这样在生长过程不需要调节温度，能够连续生长氧化铪缓冲层和氧化镓薄膜层。2. The present invention adopts a continuous process of atomic layer deposition to prepare a buffer layer and a gallium oxide thin film layer. The process selects hafnium oxide as the buffer layer. During the preparation process, the substrate temperature is controlled so that it is located within the intersection range of the reaction temperature window of the hafnium source and the oxygen source and the reaction temperature window of the gallium source and the oxygen source. In this way, there is no need to adjust the temperature during the growth process, and the hafnium oxide buffer layer and the gallium oxide thin film layer can be continuously grown.
3、本发明选用原子层沉积法的连续工艺制备氧化铪缓冲层和氧化镓薄膜层，工艺选用臭氧作为氧源，一方面避免了在低温下水作为氧源与三甲基镓或三乙基镓等镓源不反应的问题，另一方面避免了等离子氧作为氧源下需要设置保护气体的问题，简化了原子层沉积程序，更利于实现缓冲层和氧化镓薄膜的连续工艺。3. The present invention adopts a continuous process of atomic layer deposition to prepare a hafnium oxide buffer layer and a gallium oxide thin film layer. The process selects ozone as an oxygen source. On the one hand, it avoids the problem that water as an oxygen source does not react with gallium sources such as trimethylgallium or triethylgallium at low temperatures. On the other hand, it avoids the problem of setting a protective gas when plasma oxygen is used as an oxygen source. It simplifies the atomic layer deposition procedure and is more conducive to realizing a continuous process of a buffer layer and a gallium oxide thin film.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本发明的连续工艺生产氧化镓薄膜层的流程图。FIG. 1 is a flow chart of the continuous process for producing a gallium oxide thin film layer according to the present invention.
图2为现有的不连续工艺的流程示意图。FIG. 2 is a schematic diagram of a flow chart of an existing discontinuous process.
图3是本发明的硅衬底上氧化镓薄膜的结构示意图。FIG. 3 is a schematic diagram of the structure of a gallium oxide thin film on a silicon substrate of the present invention.
图4是本发明所采用原子层沉积法的连续工艺制备氧化铪缓冲层和氧化镓薄膜层的工艺流程图。FIG. 4 is a process flow chart of preparing a hafnium oxide buffer layer and a gallium oxide thin film layer by a continuous process of atomic layer deposition adopted in the present invention.
图5(a)、(b)和(c)分别是对比例1制得的未有缓冲层作用的硅(100)、(110)和(111)衬底上制备氧化镓薄膜的表面光镜图片。5(a), (b) and (c) are surface optical microscopy images of gallium oxide thin films prepared on silicon (100), (110) and (111) substrates without a buffer layer obtained in Comparative Example 1, respectively.
图6(a)、(b)和(c)分别是实施例1制得的氧化铪缓冲层作用的硅(100)、(110)和(111)衬底上氧化镓薄膜的表面光镜图片。6(a), (b) and (c) are surface optical microscopy images of gallium oxide thin films on silicon (100), (110) and (111) substrates with hafnium oxide buffer layers prepared in Example 1, respectively.
图7是实施例1制得的氧化铪缓冲层作用的硅(100)衬底上的氧化镓薄膜表面的原子力显微镜图片。FIG. 7 is an atomic force microscope image of the surface of the gallium oxide film on the silicon (100) substrate with the hafnium oxide buffer layer prepared in Example 1. FIG.
具体实施方式Detailed ways
下面将配合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题并达成技术功效的实现过程进行充分理解并据以实施。The following will describe the implementation methods of the present invention in detail with reference to the accompanying drawings and examples, so as to fully understand and implement the implementation process of how the present invention applies technical means to solve technical problems and achieve technical effects.
本发明在硅衬底上制备氧化镓薄膜的结构如图3所示，自下而上包括硅衬底、氧化铪缓冲层以及氧化镓薄膜层。硅衬底包含(100)、(110)和(111)三种晶面，氧化铪缓冲层厚度在30nm到70nm，氧化镓薄膜层厚度在50nm到200nm。The structure of the gallium oxide thin film prepared on the silicon substrate of the present invention is shown in Figure 3, which includes a silicon substrate, a hafnium oxide buffer layer and a gallium oxide thin film layer from bottom to top. The silicon substrate contains three crystal planes (100), (110) and (111), the thickness of the hafnium oxide buffer layer is 30nm to 70nm, and the thickness of the gallium oxide thin film layer is 50nm to 200nm.
现有制备带缓冲层的氧化镓薄膜层的工艺一般如图2所示，都是采用不连续的工艺分别制备缓冲层和氧化镓薄膜层。这种工艺制作周期长，缓冲层与氧化镓薄膜的制备过程中存在间歇，而且在缓冲层制备结束等待氧化镓薄膜制备的过程中会发生界面态的改变，影响了氧化镓薄膜的生长质量和相应微电子器件的应用前景。The existing process for preparing a gallium oxide thin film layer with a buffer layer is generally shown in Figure 2, and a discontinuous process is used to prepare the buffer layer and the gallium oxide thin film layer respectively. This process has a long production cycle, there is an interval in the preparation process of the buffer layer and the gallium oxide thin film, and the interface state changes during the process of waiting for the preparation of the gallium oxide thin film after the buffer layer is prepared, which affects the growth quality of the gallium oxide thin film and the application prospects of the corresponding microelectronic devices.
而本发明为了解决上述问题，如图1所示，采用连续工艺制备缓冲层和氧化镓薄膜，在原子层沉积系统设置好如图4的相应流程程序后即可完成缓冲层和氧化镓薄膜的依次制备，既节省了时间，而且也不会发生界面态的改变，能够提升氧化镓薄膜的生产质量。In order to solve the above problems, the present invention adopts a continuous process to prepare the buffer layer and the gallium oxide film as shown in FIG1 . After the atomic layer deposition system is set up with the corresponding process program as shown in FIG4 , the buffer layer and the gallium oxide film can be prepared sequentially, which not only saves time but also does not cause changes in the interface state, and can improve the production quality of the gallium oxide film.
本发明具体的连续生产工艺如下：The specific continuous production process of the present invention is as follows:
步骤1)清洗硅衬底：先用氢氟酸去除硅表面的二氧化硅层，然后依次用丙酮、无水乙醇和去离子水分别超声清洗10分钟。Step 1) Cleaning the silicon substrate: first remove the silicon dioxide layer on the silicon surface with hydrofluoric acid, and then ultrasonically clean it with acetone, anhydrous ethanol and deionized water for 10 minutes respectively.
步骤2)采用原子层沉积法的连续工艺制备缓冲层和氧化镓薄膜层：包含300-700循环周期的氧化铪缓冲层和1000-4000循环周期的氧化镓薄膜层。真空度＜1Torr，衬底温度为230-280℃，载气为氩气，流量为20sccm。Step 2) A buffer layer and a gallium oxide thin film layer are prepared by a continuous process of atomic layer deposition: a hafnium oxide buffer layer of 300-700 cycles and a gallium oxide thin film layer of 1000-4000 cycles. The vacuum degree is less than 1 Torr, the substrate temperature is 230-280°C, the carrier gas is argon, and the flow rate is 20sccm.
其中氧化铪缓冲层的每个周期包含四个脉冲：采用TEMAH为源的铪源脉冲，脉冲时间为0.15s；氩气作用的吹扫脉冲，时间为5s；采用臭氧为源的氧源脉冲，脉冲时间为5s；氩气作用的吹扫脉冲，时间为10s。Each cycle of the hafnium oxide buffer layer includes four pulses: a hafnium source pulse using TEMAH as a source with a pulse time of 0.15 s; a purge pulse using argon gas with a time of 5 s; an oxygen source pulse using ozone as a source with a pulse time of 5 s; and a purge pulse using argon gas with a time of 10 s.
其中氧化镓薄膜层的每个周期包含四个脉冲：采用TEG或TMG为源的镓源脉冲，脉冲时间为0.1s或0.015s；氩气作用的吹扫脉冲，时间为5s；采用臭氧为源的氧源脉冲，脉冲时间为5s；氩气作用的吹扫脉冲，时间为10s。Each cycle of the gallium oxide thin film layer includes four pulses: a gallium source pulse using TEG or TMG as the source, with a pulse time of 0.1s or 0.015s; a purge pulse with argon gas, with a time of 5s; an oxygen source pulse using ozone as the source, with a pulse time of 5s; and a purge pulse with argon gas, with a time of 10s.
步骤3)采用退火炉进行高温退火：退火氛围为氮气，温度为900℃，退火时间为10min。Step 3) high temperature annealing is performed in an annealing furnace: the annealing atmosphere is nitrogen, the temperature is 900° C., and the annealing time is 10 min.
为了更好的证明本发明连续生产工艺的优势，下面通过具体的实施例来验证。In order to better demonstrate the advantages of the continuous production process of the present invention, specific examples are provided below for verification.
实施例1Example 1
步骤1)清洗硅衬底，并将清洗后的硅衬底放入原子层沉积腔室内；Step 1) cleaning the silicon substrate and placing the cleaned silicon substrate into an atomic layer deposition chamber;
步骤2)调整原子层沉积腔室内真空度＜1Torr，将硅衬底温度升温至250℃，采用原子层沉积法的连续工艺依次制备氧化铪缓冲层和氧化镓薄膜层；其中包含500循环周期的氧化铪缓冲层和2000循环周期的氧化镓薄膜层。Step 2) adjusting the vacuum degree in the atomic layer deposition chamber to less than 1 Torr, raising the temperature of the silicon substrate to 250° C., and sequentially preparing a hafnium oxide buffer layer and a gallium oxide thin film layer by a continuous process of atomic layer deposition; the hafnium oxide buffer layer having 500 cycles and the gallium oxide thin film layer having 2000 cycles are prepared.
其中氧化铪缓冲层的每个周期包含四个脉冲：采用TEMAH为源的铪源脉冲，脉冲时间为0.15s；氩气作用的吹扫脉冲，时间为5s；采用臭氧为源的氧源脉冲，脉冲时间为5s；氩气作用的吹扫脉冲，时间为10s。Each cycle of the hafnium oxide buffer layer includes four pulses: a hafnium source pulse using TEMAH as a source with a pulse time of 0.15 s; a purge pulse using argon gas with a time of 5 s; an oxygen source pulse using ozone as a source with a pulse time of 5 s; and a purge pulse using argon gas with a time of 10 s.
其中氧化镓薄膜层的每个周期包含四个脉冲：采用TEG为源的镓源脉冲，脉冲时间为0.1s；氩气作用的吹扫脉冲，时间为5s；采用臭氧为源的氧源脉冲，脉冲时间为5s；氩气作用的吹扫脉冲，时间为10s。Each cycle of the gallium oxide thin film layer includes four pulses: a gallium source pulse using TEG as the source, with a pulse time of 0.1s; a purge pulse using argon gas, with a time of 5s; an oxygen source pulse using ozone as the source, with a pulse time of 5s; and a purge pulse using argon gas, with a time of 10s.
步骤3)采用高温退火，即得到硅衬底上高质量的氧化镓薄膜。Step 3) high temperature annealing is performed to obtain a high-quality gallium oxide film on the silicon substrate.
对比例1Comparative Example 1
步骤1)清洗硅衬底，并将清洗后的硅衬底放入原子层沉积腔室内；Step 1) cleaning the silicon substrate and placing the cleaned silicon substrate into an atomic layer deposition chamber;
步骤2)调整原子沉积腔室内真空度＜1Torr，将硅衬底温度升温至250℃，采用原子层沉积法直接在硅衬底上沉积氧化镓层。Step 2) adjusting the vacuum degree in the atomic deposition chamber to less than 1 Torr, raising the temperature of the silicon substrate to 250° C., and directly depositing a gallium oxide layer on the silicon substrate by atomic layer deposition.
步骤3)采用高温退火，即得到硅衬底上的氧化镓薄膜。Step 3) high temperature annealing is performed to obtain a gallium oxide film on a silicon substrate.
图5和图6分别为无缓冲层和采用本发明所用工艺在缓冲层作用下硅衬底上氧化镓薄膜的表面光镜图片。由图可知，没有缓冲层直接生长的氧化镓薄膜表面呈现明显的花状缺陷，本质是应力诱导所产生的表面裂纹。另一方面，有氧化铪缓冲层作用下，硅衬底上氧化镓薄膜均表面平整，未呈现花状裂纹缺陷。Figures 5 and 6 are optical microscope images of the surface of the gallium oxide film on the silicon substrate without a buffer layer and with the buffer layer using the process of the present invention, respectively. As can be seen from the figure, the surface of the gallium oxide film grown directly without a buffer layer shows obvious flower-like defects, which are essentially surface cracks induced by stress. On the other hand, with the hafnium oxide buffer layer, the surface of the gallium oxide film on the silicon substrate is flat and does not show flower-like crack defects.
图7为采用本发明所用工艺，在氧化铪缓冲层作用下硅(100)衬底上氧化镓薄膜表面的原子力显微镜图片。可以看到氧化镓薄膜表面平整，表面粗糙度低至3.27nm，证明了良好的生长质量。Figure 7 is an atomic force microscope image of the surface of a gallium oxide film on a silicon (100) substrate under the action of a hafnium oxide buffer layer using the process used in the present invention. It can be seen that the surface of the gallium oxide film is flat, and the surface roughness is as low as 3.27nm, proving the good growth quality.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换(比如缓冲层结构的替换、以及生长方法的改变、缓冲层材料选择等)都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention (such as replacement of the buffer layer structure, change of the growth method, selection of the buffer layer material, etc.) should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.
| Application Number | Priority Date | Filing Date | Title |
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| CN202410184869.XACN118028779A (en) | 2024-02-19 | 2024-02-19 | Method for preparing gallium oxide film on silicon substrate |
| Application Number | Priority Date | Filing Date | Title |
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| CN202410184869.XACN118028779A (en) | 2024-02-19 | 2024-02-19 | Method for preparing gallium oxide film on silicon substrate |
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| CN118028779Atrue CN118028779A (en) | 2024-05-14 |
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| CN202410184869.XAPendingCN118028779A (en) | 2024-02-19 | 2024-02-19 | Method for preparing gallium oxide film on silicon substrate |
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| CN119859790A (en)* | 2025-03-25 | 2025-04-22 | 蓝河科技(绍兴)有限公司 | Growth method of gallium oxide film |
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| CN119859790A (en)* | 2025-03-25 | 2025-04-22 | 蓝河科技(绍兴)有限公司 | Growth method of gallium oxide film |
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