技术领域Technical field
本申请实施例涉及太阳能电池技术领域，特别涉及一种太阳能电池制备方法、太阳能电池及光伏组件。The embodiments of the present application relate to the field of solar cell technology, and in particular to a solar cell preparation method, solar cell and photovoltaic module.
背景技术Background technique
化石能源存在大气污染并且储量有限，而太阳能具有清洁、无污染和资源丰富等优点，因此，太阳能正在逐步成为替代化石能源的核心清洁能源，由于太阳能电池具有良好的光电转化效率，太阳能电池成为了清洁能源利用的发展重心。Fossil energy causes air pollution and has limited reserves, while solar energy has the advantages of being clean, pollution-free and abundant in resources. Therefore, solar energy is gradually becoming the core clean energy to replace fossil energy. Since solar cells have good photoelectric conversion efficiency, they have become the focus of development of clean energy utilization.
为了尽可能提高太阳能电池的效率和对入射光线的利用率，当前常用的方式是对太阳能电池进行图形化处理，形成和电极正对的金属化区域以及和金属化区域邻接的非金属化区域，并将非金属化区域的表面形貌转换为凹凸表面。然而，当前太阳能电池的制备成本和难度都较大。In order to maximize the efficiency of solar cells and the utilization of incident light, the currently common method is to pattern the solar cells to form a metallized area facing the electrode and a non-metalized area adjacent to the metallized area. And convert the surface topography of the non-metalized area into a concave and convex surface. However, the current preparation cost and difficulty of solar cells are high.
发明内容Contents of the invention
本申请实施例提供一种太阳能电池制备方法、太阳能电池及光伏组件，至少有利于降低太阳能电池的制备成本和难度。The embodiments of the present application provide a method for preparing a solar cell, a solar cell and a photovoltaic module, which are at least helpful in reducing the cost and difficulty of preparing the solar cell.
本申请实施例提供一种太阳能电池制备方法，包括：提供基底，所述基底的表面上具有第一掺杂层，所述第一掺杂层包括沿第一方向交替排布的金属化区和非金属化区；在所述第一掺杂层远离所述基底的表面上，形成保护层；对所述保护层与所述金属化区正对的部分进行改性处理，并刻蚀所述保护层，形成第一刻蚀掩模，所述第一刻蚀掩模正对所述金属化区；基于所述第一刻蚀掩模对所述第一掺杂层进行刻蚀处理，将所述非金属化区远离所述基底的表面转换为凹凸表面；去除所述第一刻蚀掩模。Embodiments of the present application provide a solar cell preparation method, including: providing a substrate with a first doped layer on the surface of the substrate, the first doped layer including metallized regions alternately arranged along a first direction and Non-metalized area; forming a protective layer on the surface of the first doped layer away from the substrate; modifying the portion of the protective layer facing the metallized area, and etching the Protective layer to form a first etching mask, the first etching mask facing the metallization region; performing an etching process on the first doped layer based on the first etching mask, and The surface of the non-metalized area away from the substrate is converted into a concave and convex surface; and the first etching mask is removed.
在一些实施例中，对所述保护层与所述金属化区正对的部分进行改性处理的步骤包括：对所述保护层与所述金属化区正对的部分进行激光处理，和/或在所述保护层与所述金属化区正对的部分远离所述基底的表面上涂敷改性溶液。In some embodiments, the step of modifying the portion of the protective layer facing the metallized area includes: laser processing the portion of the protective layer facing the metallized area, and/or applying a modification solution on the surface of the portion of the protective layer facing the metallized area away from the substrate.
在一些实施例中，所述激光处理的工艺参数包括：激光类型为紫外皮秒激光，且激光功率为4W至30W。In some embodiments, the process parameters of the laser treatment include: the laser type is ultraviolet picosecond laser, and the laser power is 4W to 30W.
在一些实施例中，所述激光处理的方法包括：对所述保护层与所述金属化区正对的部分进行激光扫描，且所述激光的扫描速度为104mm/S至105mm/S。In some embodiments, the laser processing method includes: laser scanning the portion of the protective layer facing the metallized area, and the scanning speed of the laser is 104 mm/S to 105 mm /S.
在一些实施例中，形成所述保护层的方法包括：在所述第一掺杂层远离所述基底的表面上形成第二掺杂层，所述第二掺杂层和所述第一掺杂层具有不同的掺杂类型。In some embodiments, the method of forming the protective layer includes: forming a second doped layer on a surface of the first doped layer away from the substrate, the second doped layer and the first doped layer The impurity layers have different doping types.
在一些实施例中，形成所述第一刻蚀掩模的方法包括：对所述第二掺杂层进行湿法刻蚀，且湿法刻蚀采用的刻蚀液包含浓度为2%至5%的强碱。In some embodiments, the method of forming the first etching mask includes: wet etching the second doped layer, and the wet etching uses an etching liquid containing a concentration of 2% to 5%. % strong base.
在一些实施例中，形成所述保护层的方法还包括：在所述第一掺杂层远离所述基底的表面上形成本征半导体层，向所述本征半导体层中掺杂目标掺杂元素，形成层叠设置在第一掺杂层上的所述第二掺杂层和绝缘层，所述绝缘层与所述第一掺杂层接触；对所述保护层与所述金属化区正对的部分进行改性处理的方法包括：对所述第二掺杂层与所述金属化区正对的部分进行改性处理。In some embodiments, the method of forming the protective layer further includes: forming an intrinsic semiconductor layer on a surface of the first doped layer away from the substrate, and doping a target doping layer into the intrinsic semiconductor layer. element to form the second doped layer and the insulating layer stacked on the first doped layer, the insulating layer being in contact with the first doped layer; the protective layer being in contact with the metallized region The method of modifying the portion includes: modifying the portion of the second doped layer facing the metallized region.
在一些实施例中，形成所述第二掺杂层前还包括：在所述第一掺杂层远离所述基底的表面上形成绝缘层；形成所述第二掺杂层包括：在所述绝缘层远离所述基底的表面上形成所述第二掺杂层；对所述保护层与所述金属化区正对的部分进行改性处理的方法包括：对所述第二掺杂层与所述金属化区正对的部分进行改性处理。In some embodiments, forming the second doped layer further includes: forming an insulating layer on a surface of the first doped layer away from the substrate; forming the second doped layer includes: The second doped layer is formed on the surface of the insulating layer away from the substrate; the method of modifying the portion of the protective layer facing the metallized region includes: combining the second doped layer with The portion facing the metallized area is modified.
在一些实施例中，形成所述第一刻蚀掩模的方法包括：对所述保护层进行第一湿法刻蚀，且第一湿法刻蚀采用的刻蚀液包含浓度为2%至5%的强碱；对所述保护层进行第二湿法刻蚀，且第二湿法刻蚀采用的刻蚀液包含浓度为2%至5%的弱酸和浓度为2%至20%的强酸。In some embodiments, the method of forming the first etching mask includes: performing a first wet etching on the protective layer, and the first wet etching uses an etching liquid containing a concentration of 2% to 5% strong alkali; perform a second wet etching on the protective layer, and the etching solution used in the second wet etching contains a weak acid with a concentration of 2% to 5% and a concentration of 2% to 20%. strong acid.
在一些实施例中，对所述第一掺杂层进行刻蚀处理的方法包括：对所述第一掺杂层远离所述基底的一侧进行湿法刻蚀，去除所述第二掺杂层，并将所述非金属化区远离所述基底的表面转换为凹凸表面；去除所述第一刻蚀掩模的步骤还包括：去除所述绝缘层。In some embodiments, the method of etching the first doped layer includes: wet etching a side of the first doped layer away from the substrate to remove the second doped layer. layer, and convert the surface of the non-metalized area away from the substrate into a concave and convex surface; the step of removing the first etching mask further includes: removing the insulating layer.
相应的本申请实施例还提供了一种太阳能电池，通过上述太阳能电池制备方法形成，包括：基底；位于所述基底表面上的第一掺杂层，所述第一掺杂层包括沿第一方向交替排布的金属化区和非金属化区，所述非金属化区远离所述基底的表面为凹凸表面。Corresponding embodiments of the present application also provide a solar cell formed by the above solar cell preparation method, including: a substrate; a first doped layer located on the surface of the substrate, the first doped layer including Metalized areas and non-metalized areas are alternately arranged in directions, and the surface of the non-metalized area away from the substrate is a concave and convex surface.
相应的本申请实施例还提供了一种光伏组件，包括：电池串，所述电池串由多个上述的太阳能电池连接而成；封装层，所述封装层用于覆盖所述电池串的表面；盖板，所述盖板用于覆盖所述封装层远离所述电池串的表面。Corresponding embodiments of the present application also provide a photovoltaic component, including: a battery string connected by a plurality of the above-mentioned solar cells; an encapsulation layer used to cover the surface of the battery string. ; Cover plate, the cover plate is used to cover the surface of the packaging layer away from the battery string.
本申请实施例提供的技术方案至少具有以下优点：The technical solutions provided by the embodiments of this application have at least the following advantages:
本申请实施例提供的太阳能电池制备方法中，在第一掺杂层远离基底的表面上形成保护层，然后对保护层和第一掺杂层中金属化区正对的部分进行改性处理，从而通过刻蚀处理的方式去除保护层与非金属化区正对的部分，进而形成覆盖在金属化区上方的第一刻蚀掩模，然后基于第一刻蚀掩模对第一掺杂层进行图形化处理，保留金属化区形貌的同时，将非金属化区远离基底的表面形貌转换为凹凸表面，然后去除第一刻蚀掩模，得到图形化处理后的第一掺杂层。对保护层与金属化区正对的部分进行改性处理，并通过刻蚀处理形成覆盖在金属化区上的第一刻蚀掩模，显著降低了第一刻蚀掩模制备过程中需要进行改性处理的部分在保护层中的占比，提高了第一刻蚀掩模的制备效率，降低了第一刻蚀掩模制备所需的时间和成本，进而降低了太阳能电池图形化处理的成本和难度。In the solar cell preparation method provided by the embodiment of the present application, a protective layer is formed on the surface of the first doped layer away from the substrate, and then the protective layer and the portion of the first doped layer facing the metallized region are modified, Thus, the portion of the protective layer facing the non-metallized area is removed by etching, and a first etching mask covering the metallized area is formed, and then the first doped layer is formed based on the first etching mask. Perform patterning processing to retain the morphology of the metallized area while converting the surface morphology of the non-metalized area away from the substrate into a concave and convex surface, and then remove the first etching mask to obtain the first doped layer after patterning . The part of the protective layer facing the metallized area is modified and etched to form a first etching mask covering the metallized area, which significantly reduces the need for preparation of the first etching mask. The proportion of the modified part in the protective layer improves the preparation efficiency of the first etching mask, reduces the time and cost required for the preparation of the first etching mask, and thereby reduces the cost of solar cell patterning processing. Cost and difficulty.
附图说明Description of drawings
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，这些示例性说明并不构成对实施例的限定，除非有特别申明，附图中的图不构成比例限制。One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplifications do not constitute limitations on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute proportional limitations.
图1为本申请一实施例提供的一种半成品太阳能电池的整体结构示意图；Figure 1 is a schematic diagram of the overall structure of a semi-finished solar cell provided by an embodiment of the present application;
图2为本申请一实施例提供的一种第一掺杂层的俯视图；Figure 2 is a top view of a first doped layer provided by an embodiment of the present application;
图3为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 3 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图4为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；FIG4 is a schematic diagram of the overall structure of another semi-finished solar cell provided in one embodiment of the present application;
图5为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 5 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图6为本申请一实施例提供的一种太阳能电池的整体结构示意图；Figure 6 is a schematic diagram of the overall structure of a solar cell provided by an embodiment of the present application;
图7为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 7 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图8为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 8 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图9为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 9 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图10为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 10 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图11为本申请一实施例提供的一种半成品太阳能电池的结构示意图；Figure 11 is a schematic structural diagram of a semi-finished solar cell provided by an embodiment of the present application;
图12为本申请一实施例提供的一种半成品太阳能电池的结构示意图；Figure 12 is a schematic structural diagram of a semi-finished solar cell provided by an embodiment of the present application;
图13为本申请一实施例提供的一种半成品太阳能电池的结构示意图；Figure 13 is a schematic structural diagram of a semi-finished solar cell provided by an embodiment of the present application;
图14为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 14 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图15为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 15 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图16为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 16 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图17为本申请一实施例提供的另一种半成品太阳能电池的整体结构示意图；Figure 17 is a schematic diagram of the overall structure of another semi-finished solar cell provided by an embodiment of the present application;
图18为本申请另一实施例提供的一种光伏组件的结构示意图。FIG. 18 is a schematic diagram of the structure of a photovoltaic module provided in another embodiment of the present application.
具体实施方式Detailed ways
由背景技术可知，当前太阳能电池的制备成本和难度较大。It can be known from the background technology that the current preparation cost and difficulty of solar cells are relatively high.
本申请一实施例提供了一种太阳能电池制备方法，在第一掺杂层远离基底的表面上形成保护层，然后对保护层和第一掺杂层中金属化区正对的部分进行改性处理，从而通过刻蚀处理的方式去除保护层与非金属化区正对的部分，进而形成覆盖在金属化区上方的第一刻蚀掩模，然后基于第一刻蚀掩模对第一掺杂层进行图形化处理，保留金属化区形貌的同时，将非金属化区远离基底的表面形貌转换为凹凸表面，然后去除第一刻蚀掩模，得到图形化处理后的第一掺杂层。对保护层与金属化区正对的部分进行改性处理，并通过刻蚀处理形成覆盖在金属化区上的第一刻蚀掩模，显著降低了第一刻蚀掩模制备过程中需要进行改性处理的部分在保护层中的占比，提高了第一刻蚀掩模的制备效率，降低了第一刻蚀掩模制备所需的时间和成本，进而降低了太阳能电池图形化处理的成本和难度。An embodiment of the present application provides a method for preparing a solar cell. A protective layer is formed on the surface of the first doped layer away from the substrate, and then the protective layer and the portion of the first doped layer facing the metallized region are modified. processing, thereby removing the portion of the protective layer facing the non-metallized area by etching, and then forming a first etching mask covering the metallized area, and then based on the first etching mask, the first doped The impurity layer is patterned to retain the morphology of the metallized area while converting the surface morphology of the non-metallized area away from the substrate into a concave and convex surface, and then the first etching mask is removed to obtain the first doped layer after patterning. Miscellaneous layer. The part of the protective layer facing the metallized area is modified and etched to form a first etching mask covering the metallized area, which significantly reduces the need for preparation of the first etching mask. The proportion of the modified part in the protective layer improves the preparation efficiency of the first etching mask, reduces the time and cost required for the preparation of the first etching mask, and thereby reduces the cost of solar cell patterning processing. Cost and difficulty.
如本文中所使用，描述为彼此“相邻”的特征(例如，区、结构、装置)意指并包含彼此最接近(例如，最靠近)定位的具有一或多个所公开标识的特征。不匹配“相邻”特征的一或多个所公开标识的额外特征(例如，额外区、额外结构、额外装置)可安置于“相邻”特征之间。换句话说，“相邻”特征可定位成直接彼此邻近，使得无其它特征介入于“相邻”特征之间；或“相邻”特征可定位成彼此间接邻近，使得具有除与至少一个“相邻”特征相关联的标识以外的标识的至少一个特征定位在“相邻”特征之间。因此，描述为彼此“竖直相邻”的特征意指并包含位于彼此竖直最接近(例如，竖直最靠近)处的一或多个标识所公开的特征。此外，描述为彼此“水平相邻”的特征意指并包含位于彼此最水平接近(例如，最水平靠近)处的一或多个所公开标识的特征。As used herein, features (eg, regions, structures, devices) described as "adjacent" to each other mean and include the features having one or more of the disclosed identifications that are located closest (eg, closest) to each other. One or more disclosed identified additional features (eg, additional regions, additional structures, additional devices) that do not match "adjacent" features may be disposed between "adjacent" features. In other words, "adjacent" features may be positioned directly adjacent to each other, such that no other features are intervening between the "adjacent" features; or "adjacent" features may be positioned indirectly adjacent to each other, such that there are features other than at least one "adjacent" feature. At least one feature of an identity other than the identity associated with the "adjacent" features is positioned between the "adjacent" features. Accordingly, features described as being "vertically adjacent" to each other are intended to include and include the identified feature or features disclosed as being located vertically closest (eg, vertically closest) to each other. Furthermore, features described as being "horizontally adjacent" to each other are meant and include one or more of the disclosed identified features that are located in closest horizontal proximity (eg, most horizontally adjacent) to each other.
以下描述中，在第一部件上方或者上形成或设置有第二部件，或者，在第一部件表面上形成或设置有第二部件，或者，在第一部件一侧形成或设置有第二部件，可以包括第一部件和第二部件直接接触的实施例，并且也可以包括在第一部件和第二部件之间可以额外的部件，从而使得第一部件和第二部件可以不直接接触的实施例。为了简单和清楚起见，可以以不同比例任意绘制各种部件。在附图中，为了简化，可以省略一些层/部件。In the following description, a second component is formed or provided above or on a first component, or a second component is formed or provided on a surface of the first component, or a second component is formed or provided on one side of the first component, which may include an embodiment in which the first component and the second component are in direct contact, and may also include an embodiment in which an additional component may be provided between the first component and the second component, so that the first component and the second component may not be in direct contact. For the sake of simplicity and clarity, various components may be arbitrarily drawn in different scales. In the drawings, some layers/components may be omitted for simplicity.
下面将结合附图对本申请的实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本申请各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。The embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. However, it will be appreciated by those skilled in the art that in each embodiment of the present application, many technical details are provided in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in the present application can be implemented.
本申请一实施例提供了一种太阳能电池制备方法，包括：An embodiment of the present application provides a solar cell preparation method, including:
参考图1和图2，提供基底101，基底101的表面上具有第一掺杂层102，第一掺杂层102包括沿第一方向交替排布的金属化区121和非金属化区122。图1为一种半成品太阳能电池的整体结构示意图，图2为一种第一掺杂层的俯视图，其中，X方向为第一方向。Referring to FIGS. 1 and 2 , a substrate 101 is provided. The substrate 101 has a first doped layer 102 on its surface. The first doped layer 102 includes metallized regions 121 and non-metallized regions 122 alternately arranged along a first direction. FIG. 1 is a schematic diagram of the overall structure of a semi-finished solar cell, and FIG. 2 is a top view of a first doped layer, in which the X direction is the first direction.
在太阳能电池的制备过程中，可以先提供基底101，基底101可以是P型半导体基底也可以是N型半导体基底。N型半导体基底内掺杂有N型掺杂元素，N型掺杂元素可以为磷（P）元素、铋（Bi）元素、锑（Sb）元素或砷（As）元素等Ⅴ族元素中的任意一者。P型半导体基底内掺杂有P型元素，P型掺杂元素可以为硼（B）元素、铝（Al）元素、镓（Ga）元素或铟（In）元素等Ⅲ族元素中的任意一者。During the preparation process of the solar cell, a substrate 101 may be provided first, and the substrate 101 may be a P-type semiconductor substrate or an N-type semiconductor substrate. The N-type semiconductor substrate is doped with N-type doping elements. The N-type doping elements can be phosphorus (P) elements, bismuth (Bi) elements, antimony (Sb) elements or arsenic (As) elements among Group V elements. Any one. The P-type semiconductor substrate is doped with P-type elements. The P-type doping element can be any group III element such as boron (B) element, aluminum (Al) element, gallium (Ga) element or indium (In) element. By.
在一些实施例中，基底101的材料可以为元素半导体材料。具体地，元素半导体材料由单一元素组成，例如可以是硅或者硅。其中，元素半导体材料可以为单晶态、多晶态、非晶态或者微晶态（同时具有单晶态和非晶态的状态，称为微晶态），例如，硅可以是单晶硅、多晶硅、非晶硅或者微晶硅中的至少一种。In some embodiments, the material of the substrate 101 may be an elemental semiconductor material. Specifically, the elemental semiconductor material is composed of a single element, which may be silicon or silicon, for example. Among them, elemental semiconductor materials can be single crystalline, polycrystalline, amorphous or microcrystalline (having both single crystalline and amorphous states is called microcrystalline state). For example, silicon can be single crystalline silicon. , at least one of polycrystalline silicon, amorphous silicon or microcrystalline silicon.
在一些实施例中，基底101的材料也可以为化合物半导体材料。常见的化合物半导体材料包括但不限于锗化硅、碳化硅、砷化镓、镓化铟、钙钛矿、碲化镉或者铜铟硒等材料。基底101也可以为蓝宝石基底、绝缘体上的硅基底或者绝缘体上的锗基底。In some embodiments, the material of the substrate 101 may also be a compound semiconductor material. Common compound semiconductor materials include, but are not limited to, silicon germanium, silicon carbide, gallium arsenide, indium gallium, perovskite, cadmium telluride or copper indium selenide. The substrate 101 may also be a sapphire substrate, a silicon-on-insulator substrate, or a germanium-on-insulator substrate.
在提供基底101后，可以通过沉积工艺，例如，化学气相沉积、物理气相沉积或者原子气相沉积等，在基底101一侧的表面上形成第一掺杂层102。第一掺杂层102由沿第一方向交替排布的金属化区121和非金属化区122构成，金属化区121指的是与太阳能电池的电极电正对的部分，非金属化区122指的是不与电极正对，且与金属化区121邻接的部分。金属化区121包括和电极电接触的部分以及沿第一方向和与电极接触的部分间隔处于预设范围内的部分，也就是说，电极在第一掺杂层102上的正投影位于金属化区121内。此外，也可以直接提供一个表面上具有第一掺杂层102的基底101，本申请实施例对此不做限制。After the substrate 101 is provided, the first doping layer 102 can be formed on the surface on one side of the substrate 101 through a deposition process, such as chemical vapor deposition, physical vapor deposition, or atomic vapor deposition. The first doped layer 102 is composed of metallized regions 121 and non-metalized regions 122 alternately arranged along the first direction. The metallized region 121 refers to the part that is electrically opposite to the electrode of the solar cell, and the non-metalized region 122 It refers to the part that is not directly opposite to the electrode and is adjacent to the metallized region 121 . The metallized region 121 includes a portion that is in electrical contact with the electrode and a portion along the first direction and a portion that is in contact with the electrode at a distance within a preset range. That is to say, the orthographic projection of the electrode on the first doped layer 102 is located on the metallized area. Within District 121. In addition, a substrate 101 with the first doping layer 102 on the surface may also be directly provided, and the embodiment of the present application does not limit this.
图2中是以金属化区121的长度延伸方向和非金属化区122的长度延伸方向与第一方向相互垂直为例进行的说明，在具体的应用中，金属化区121的长度延伸方向和非金属化区122的长度延伸方向还可以与第一方向之间的夹角还可以是30°、45°或者60°等。FIG. 2 illustrates an example in which the length extension direction of the metallization region 121 and the length extension direction of the non-metalization region 122 are perpendicular to the first direction. In a specific application, the length extension direction of the metallization region 121 and The angle between the length direction of the non-metalized region 122 and the first direction may also be 30°, 45°, 60°, etc.
其中，第一掺杂层102可以直接与基底101的一侧表面相接触，此外，也可以预先在基底101表面上形成一层介质层，在介质层远离基底101的表面上形成第一掺杂层102，使得第一掺杂层102位于基底101的表面上且不与基底101直接接触。另外，形成第一掺杂层102的方式可以是先沉积不包含掺杂元素的半导体层，然后通过离子注入或者离子扩散等方式向半导体层中掺杂特定掺杂元素形成第一掺杂层102；也可以直接通过原位掺杂的方式，在沉积半导体层的过程中将掺杂元素同步掺入到半导体层中，直接形成第一掺杂层102，本申请实施例对此不做限制。Among them, the first doped layer 102 can be directly in contact with one side surface of the substrate 101. In addition, a dielectric layer can also be formed on the surface of the substrate 101 in advance, and the first doped layer can be formed on the surface of the dielectric layer away from the substrate 101. layer 102 such that the first doped layer 102 is located on the surface of the substrate 101 and is not in direct contact with the substrate 101 . In addition, the first doping layer 102 may be formed by first depositing a semiconductor layer that does not contain doping elements, and then doping specific doping elements into the semiconductor layer through ion implantation or ion diffusion to form the first doping layer 102 ; Alternatively, the first doping layer 102 may be directly formed by simultaneously doping the doping elements into the semiconductor layer during the deposition of the semiconductor layer through in-situ doping. This is not limited in the embodiments of the present application.
在一些实施例中，第一掺杂层102的材料包括非晶硅、多晶硅或者碳化硅中的至少一者。In some embodiments, the material of the first doped layer 102 includes at least one of amorphous silicon, polysilicon, or silicon carbide.
在一些实施例中，第一掺杂层102的掺杂类型可以和基底101的掺杂类型相同，也可以和基底101的掺杂类型相反。In some embodiments, the doping type of the first doping layer 102 may be the same as the doping type of the substrate 101 , or may be opposite to the doping type of the substrate 101 .
在第一掺杂层102和基底101的掺杂类型相同的情况下，第一掺杂层102中掺杂元素的掺杂浓度高于基底101中掺杂元素的掺杂浓度，且基底101和第一掺杂层102之间还可以包括一层隧穿介质层，隧穿介质层和第一掺杂层102可以构成钝化接触结构，对基底101的缺陷进行钝化，并结合场钝化的方式使得多数载流子能够通过隧穿的方式进入第一掺杂层102，降低基底101表面的复合电流，从而形成高效的隧穿氧化层钝化接触太阳能电池（Tunnel Oxide Passivated Contact solar cell , TOPCon）。其中，隧穿介质层的材料包括氧化硅、氮化硅、氮氧化硅、碳化硅或者氟化镁中的至少一者。When the first doping layer 102 and the substrate 101 have the same doping type, the doping concentration of the doping element in the first doping layer 102 is higher than the doping concentration of the doping element in the substrate 101, and the substrate 101 and A tunnel dielectric layer may also be included between the first doped layer 102. The tunnel dielectric layer and the first doped layer 102 may form a passivation contact structure to passivate defects in the substrate 101 and combine with field passivation. This way, most carriers can enter the first doped layer 102 through tunneling, reducing the recombination current on the surface of the substrate 101, thereby forming an efficient tunnel oxide passivated contact solar cell (Tunnel Oxide Passivated Contact solar cell, TOPCon). The material of the tunnel dielectric layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or magnesium fluoride.
在第一掺杂层102和基底101的掺杂类型不同的情况下，第一掺杂层102中金属化区121中掺杂元素的掺杂浓度可以大于非金属化区122中掺杂元素的掺杂浓度，也可以等于非金属化区122中掺杂元素的掺杂浓度，且第一掺杂层102可以直接与基底101的表面相接触，从而形成具有良好导电性能和载流子汇集能力的发射极。In the case where the first doping layer 102 and the substrate 101 have different doping types, the doping concentration of the doping element in the metallized region 121 of the first doped layer 102 may be greater than that of the doping element in the non-metalized region 122 . The doping concentration may also be equal to the doping concentration of the doping element in the non-metalized region 122, and the first doping layer 102 may be in direct contact with the surface of the substrate 101, thereby forming a layer with good conductive properties and carrier collection ability. emitter.
在第一掺杂层102远离基底101的表面上形成保护层103。A protection layer 103 is formed on a surface of the first doping layer 102 away from the substrate 101 .
在形成第一掺杂层102后，可以通过沉积工艺在第一掺杂层102远离基底101的表面上进行保护层103的沉积，从而形成能够覆盖第一掺杂层102远离基底101的表面的保护层103。其中，沉积工艺包括化学气相沉积、物理气相沉积或者原子气相沉积中的至少一种。After forming the first doping layer 102, a protective layer 103 may be deposited on a surface of the first doping layer 102 away from the substrate 101 by a deposition process, thereby forming a protective layer 103 capable of covering the surface of the first doping layer 102 away from the substrate 101. The deposition process includes at least one of chemical vapor deposition, physical vapor deposition or atomic vapor deposition.
结合参考图1、图3和图4，对保护层103与金属化区121正对的部分进行改性处理，并刻蚀保护层103，形成第一刻蚀掩模131，第一刻蚀掩模131正对金属化区121。图3为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向；图4为另一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to Figures 1, 3 and 4, the portion of the protective layer 103 facing the metallized region 121 is modified, and the protective layer 103 is etched to form a first etching mask 131. The mold 131 faces the metallization area 121. Figure 3 is a schematic diagram of the overall structure of a semi-finished solar cell, in which the X direction is the first direction; Figure 4 is a schematic diagram of the overall structure of another semi-finished solar cell, in which the X direction is the first direction.
在形成保护层103后，为了能够对第一掺杂层102的非金属化区122进行表面形貌的修整，可以预先对保护层103进行选择性刻蚀形成第一刻蚀掩模131，第一刻蚀掩模131正对金属化区121。对保护层103进行选择性刻蚀的方式包括湿法刻蚀、激光刻蚀或者物理刻蚀等，激光刻蚀和物理刻蚀指的是利用高速粒子通过吹扫或者碰撞的方式，沿特定的方向对保护层103正对非金属化区122的部分进行刻蚀；湿法刻蚀则是通过化学反应的方式对保护层103正对非金属化区122的部分进行刻蚀。而为了保证刻蚀效果和尽可能降低选择性刻蚀对第一掺杂层102的损伤，可以优先采用湿法刻蚀的方式对保护层103进行刻蚀处理。After forming the protective layer 103, in order to be able to trim the surface morphology of the non-metallized area 122 of the first doped layer 102, the protective layer 103 can be selectively etched in advance to form a first etching mask 131, and the first etching mask 131 is opposite to the metallized area 121. The selective etching method of the protective layer 103 includes wet etching, laser etching or physical etching, etc. Laser etching and physical etching refer to etching the part of the protective layer 103 opposite to the non-metallized area 122 along a specific direction by means of sweeping or collision of high-speed particles; wet etching is etching the part of the protective layer 103 opposite to the non-metallized area 122 by chemical reaction. In order to ensure the etching effect and minimize the damage of the first doped layer 102 caused by selective etching, wet etching can be preferably used to etch the protective layer 103.
在采用湿法刻蚀的过程中，可以通过改性处理的方式对保护层103中的部分区域进行改性，使得湿法刻蚀过程中，改性区域或者非改性区域能够具有不同的刻蚀效率或者需要采用不同的刻蚀液进行刻蚀。例如，对保护层103正对非金属化区122的部分进行改性处理，改变非金属化区122刻蚀特性，形成如图3所示的结构，然后选用特定的刻蚀液对非金属化区122改性后的保护层103进行湿法刻蚀，完全去除保护层103正对非金属化区122的部分，保留至少部分厚度的金属化区121，形成如图4所示的正对金属化区121的第一刻蚀掩模131。类似的，还可以对保护层103正对金属化区121的部分进行改性处理，然后通过湿法刻蚀的方式，去除保护层103中未经改性处理的部分，并保留至少部分厚度的金属化区121，即，刻蚀保护层103正对非金属化区122的部分，形成正对金属化区121的第一刻蚀掩模131。其中，改性处理指的是通过镀膜、基团键合、化学反应或者晶格调整等手段中的至少一种，对膜层表现出的物理或者化学性能进行调整。In the process of wet etching, some areas in the protective layer 103 can be modified through modification treatment, so that during the wet etching process, the modified area or the non-modified area can have different etching patterns. Etching efficiency may need to use different etching solutions for etching. For example, the portion of the protective layer 103 facing the non-metallized region 122 is modified to change the etching characteristics of the non-metallized region 122 to form a structure as shown in Figure 3, and then a specific etching liquid is selected to The protective layer 103 modified in the area 122 is wet etched to completely remove the portion of the protective layer 103 facing the non-metallized area 122, leaving at least a partial thickness of the metallized area 121, forming a metal facing area as shown in Figure 4 The first etching mask 131 of the etching region 121. Similarly, the portion of the protective layer 103 facing the metallized region 121 can also be modified, and then the unmodified portion of the protective layer 103 is removed by wet etching, and at least part of the thickness of the protective layer 103 is retained. The metallized region 121 , that is, the portion of the etching protection layer 103 facing the non-metallized region 122 , forms the first etching mask 131 facing the metallized region 121 . Among them, modification treatment refers to adjusting the physical or chemical properties of the film layer through at least one of coating, group bonding, chemical reaction or lattice adjustment.
通过对保护层103和金属化区121正对的部分进行改性处理，并基于改性处理的结果，对保护层103进行选择性刻蚀形成正对金属化区121的第一刻蚀掩模131，有效的暴露出第一掺杂层102的非金属化区122的同时，在金属化区121上形成和第一掺杂层102具有不同刻蚀性能的第一刻蚀掩模131，便于利用第一刻蚀掩模131对第一掺杂层102进行图形化处理。The protective layer 103 is selectively etched to form a first etching mask facing the metallized region 121 by modifying the portion facing the protective layer 103 and the metallized region 121 , and based on the result of the modification treatment. 131. While effectively exposing the non-metallized region 122 of the first doped layer 102, a first etching mask 131 with different etching properties from the first doped layer 102 is formed on the metallized region 121 to facilitate The first doping layer 102 is patterned using the first etching mask 131 .
结合参考图1、图4和图5，基于第一刻蚀掩模131对第一掺杂层102进行刻蚀处理，将非金属化区122远离基底101的表面转换为凹凸表面。图5为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIGS. 1 , 4 and 5 , the first doped layer 102 is etched based on the first etching mask 131 to convert the surface of the non-metallized region 122 away from the substrate 101 into a concave and convex surface. Figure 5 is a schematic diagram of the overall structure of a semi-finished solar cell, in which the X direction is the first direction.
在形成第一刻蚀掩模131后，可以利用第一刻蚀掩模131作为第一掺杂层102图形化处理的保护膜，基于第一刻蚀掩模131对第一掺杂层102进行刻蚀处理，将非金属化区122远离基底101的表面刻蚀为凹凸表面，同时保留金属化区121的形貌，从而形成金属化区121远离基底101的表面为平滑表面，非金属化区122远离基底101的表面为凹凸表面的第一掺杂层102，实现对第一掺杂层102的图形化处理。其中，平滑表面指的是金属化区121远离基底101的表面的粗糙度小于特定值，使得金属化区121远离基底101的表面在纳米级的范围下可以看作是光滑的表面。After the first etching mask 131 is formed, the first etching mask 131 can be used as a protective film for patterning the first doped layer 102, and the first doped layer 102 can be processed based on the first etching mask 131. The etching process is to etch the surface of the non-metallized region 122 away from the substrate 101 into a concave and convex surface while retaining the morphology of the metalized region 121, thereby forming a smooth surface on the surface of the metalized region 121 away from the substrate 101, and the non-metalized region 122 is away from the first doped layer 102 whose surface is a concave and convex surface of the substrate 101, thereby realizing the patterning process of the first doped layer 102. The smooth surface refers to that the roughness of the surface of the metallized area 121 away from the substrate 101 is less than a specific value, so that the surface of the metallized area 121 away from the substrate 101 can be regarded as a smooth surface in the nanoscale range.
通过基于第一刻蚀掩模131对第一掺杂层102进行的刻蚀处理，形成金属化区121远离基底101的表面为平滑表面，非金属化区122远离基底101的表面为凹凸表面的第一掺杂层102，使得第一掺杂层102实现精确的图形化，进而有效降低第一掺杂层102寄生光吸收，同时便于在金属化区121上进行高质量的减反射膜层以及电极的制备，进而提高太阳能电池的减反射膜层质量以及电极与第一掺杂层102电接触的可靠性，从而提高太阳能电池的光电转换效率。By etching the first doped layer 102 based on the first etching mask 131, the surface of the metallized region 121 away from the substrate 101 is a smooth surface, and the surface of the non-metallized region 122 away from the substrate 101 is formed into a concave and convex surface. The first doped layer 102 enables precise patterning of the first doped layer 102, thereby effectively reducing the parasitic light absorption of the first doped layer 102, and at the same time facilitating the formation of a high-quality anti-reflective film layer on the metallized region 121. The preparation of the electrode further improves the quality of the anti-reflection film layer of the solar cell and the reliability of the electrical contact between the electrode and the first doped layer 102, thereby improving the photoelectric conversion efficiency of the solar cell.
结合参考图1、图5和图6，去除第一刻蚀掩模131。图6为一种太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIG. 1 , FIG. 5 and FIG. 6 , the first etching mask 131 is removed. Figure 6 is a schematic diagram of the overall structure of a solar cell, in which the X direction is the first direction.
在完成对第一掺杂层102的图形化处理后，为了避免第一刻蚀掩模131对成品太阳能电池的光电转换性能造成影响，可以将作为掩膜层的第一刻蚀掩模131去除，从而暴露出远离基底101的表面为平滑表面的金属化区121。然后在完成图形化处理后的第一掺杂层102远离基底101的一侧进行后续减反射膜层和电极等结构的制备，形成具有良好光电转换性能的太阳能电池。After the patterning process of the first doped layer 102 is completed, in order to avoid the first etching mask 131 from affecting the photoelectric conversion performance of the finished solar cell, the first etching mask 131 as a mask layer can be removed. , thereby exposing the metallized region 121 where the surface away from the substrate 101 is a smooth surface. Then, subsequent anti-reflection film layers, electrodes and other structures are prepared on the side of the patterned first doped layer 102 away from the substrate 101 to form a solar cell with good photoelectric conversion performance.
通过在第一掺杂层102远离基底101的表面上形成保护层103，然后对保护层103正对金属化区121的部分进行改性处理，从而便于刻蚀保护层103形成与金属化区121正对的第一刻蚀掩模131，准确形成第一掺杂层102图形化处理过程中的掩膜层，同时，由于是对保护层103正对金属化区121的部分进行改性处理，且金属化区121的面积明显小于非金属化区122的面积，因此，相较于对非金属化区122进行改性处理的方式，显著降低了第一刻蚀掩模131形成的成本和难度，进而降低了太阳能电池制备的成本和难度。基于第一刻蚀掩模131对第一掺杂层102进行图形化处理，使得非金属化区122远离基底101的表面形貌变更为凹凸表面，降低第一掺杂层102寄生光吸收，提高第一掺杂层102光反射能力，同时有效的保留了金属化区121远离基底101的表面的平整，便于在金属化区121远离基底101的表面上进行高质量的减反射膜层和电极的制备，从而提高太阳能电池的光电转换性能。By forming the protective layer 103 on the surface of the first doped layer 102 away from the substrate 101, and then modifying the portion of the protective layer 103 facing the metallized region 121, the etching of the protective layer 103 and the metallized region 121 are facilitated. The opposite first etching mask 131 accurately forms the mask layer during the patterning process of the first doped layer 102. At the same time, since the portion of the protective layer 103 facing the metallized region 121 is modified, Moreover, the area of the metallized region 121 is significantly smaller than the area of the non-metalized region 122. Therefore, compared with the method of modifying the non-metalized region 122, the cost and difficulty of forming the first etching mask 131 are significantly reduced. , thereby reducing the cost and difficulty of solar cell preparation. The first doped layer 102 is patterned based on the first etching mask 131 so that the surface topography of the non-metallized region 122 away from the substrate 101 is changed to a concave and convex surface, thereby reducing the parasitic light absorption of the first doped layer 102 and improving the The first doped layer 102 has light reflection capability while effectively retaining the flatness of the surface of the metallized region 121 away from the substrate 101 , which facilitates high-quality anti-reflection coatings and electrodes on the surface of the metallized region 121 away from the substrate 101 . preparation, thereby improving the photoelectric conversion performance of solar cells.
在一些实施例中，对保护层103与金属化区121正对的部分进行改性处理的步骤包括：对保护层103与金属化区121正对的部分进行激光处理，和/或在保护层103与金属化区121正对的部分远离基底101的表面上涂敷改性溶液。In some embodiments, the step of modifying the portion of the protective layer 103 facing the metallized area 121 includes: laser processing the portion of the protective layer 103 facing the metallized area 121, and/or applying a modification solution on the surface of the portion of the protective layer 103 facing the metallized area 121 away from the substrate 101.
在对保护层103正对金属化区121的部分进行改性，并通过刻蚀工艺对保护层103未经改性处理正对非金属化区122的部分进行选择性刻蚀前，可以根据金属化区121和非金属化区122的划分或者太阳能电池的电极规划，在保护层103远离基底101的表面正对金属化区121的部分上涂敷改性溶液或者进行激光处理。Before modifying the portion of the protective layer 103 facing the metallized area 121 and selectively etching the portion of the protective layer 103 facing the non-metallized area 122 that has not been modified through an etching process, a modification solution can be applied or laser treatment can be performed on the portion of the surface of the protective layer 103 facing the metallized area 121 away from the substrate 101, according to the division of the metallized area 121 and the non-metallized area 122 or the electrode planning of the solar cell.
在通过涂敷改性溶液对保护层103进行改性处理的过程中，可以利用改性溶液中包含的高分子基团在保护层103的部分表面上形成涂敷材料构成的掩膜，从而改变保护层103远离基底101的表面的性质，相当于在保护层103远离基底101的一侧形成一层额外的保护膜；还可以直接利用改性溶液与保护层103产生化学反应，形成自由基与改性溶液中的特定基团或者单体发生键合，从而直接改变保护层103远离基底101的部分表面的性质。In the process of modifying the protective layer 103 by applying the modifying solution, the polymer groups contained in the modifying solution can be used to form a mask composed of the coating material on part of the surface of the protective layer 103, thereby changing the The nature of the surface of the protective layer 103 away from the substrate 101 is equivalent to forming an additional protective film on the side of the protective layer 103 away from the substrate 101; a modified solution can also be directly used to react chemically with the protective layer 103 to form free radicals and Specific groups or monomers in the modified solution are bonded, thereby directly changing the properties of the surface of the protective layer 103 away from the substrate 101 .
此外，对保护层103进行改性处理时，还可以直接通过激光扫描的方式，对保护层103远离基底101的表面与金属化区121正对的部分进行处理，利用高能射线功能基团在保护层103的表面发生聚合反应，从而改变保护层103远离基底101的表面中正对金属化区121的部分表面的性质，或者改变保护层103正对金属化区121的部分整体的性质。In addition, when modifying the protective layer 103, you can also directly use laser scanning to process the portion of the surface of the protective layer 103 away from the substrate 101 that faces the metallized area 121, and use high-energy ray functional groups to protect the protective layer 103. The surface of the layer 103 undergoes a polymerization reaction, thereby changing the properties of the portion of the surface of the protective layer 103 away from the substrate 101 facing the metallized region 121 , or changing the properties of the entire portion of the protective layer 103 facing the metallized region 121 .
上述内容中是以分别独立采用激光处理或者涂敷改性溶液的方式为例进行的说明，在具体的应用中，可以结合激光处理和涂敷改性溶液的方式进行保护层103的改性，或者还可以结合其他改性方式，例如，等离子体引发改性或者表面活性剂改性中的至少一者，本申请实施例对此不做限制。The above content is based on the example of using laser processing or coating a modification solution independently. In a specific application, the protective layer 103 can be modified by combining laser processing and coating a modification solution. Or it can also be combined with other modification methods, such as at least one of plasma-induced modification or surfactant modification, which is not limited by the embodiments of the present application.
在一些实施例中，激光处理的工艺参数包括：激光类型为紫外皮秒激光，且激光功率为4W至30W。In some embodiments, the process parameters of the laser treatment include: the laser type is ultraviolet picosecond laser, and the laser power is 4W to 30W.
在进行保护层103制备的过程中，由于保护层103自身的厚度有限，在通过激光处理对保护层103进行改性的情况下，为了避免激光处理对第一掺杂层102造成损伤，可以采用紫外皮秒激光进行激光处理，一方面利用紫外光的低穿透性尽可能降低保护层103改性过程中对第一掺杂层102造成损伤的概率，另一方面利用皮秒激光的超短脉宽和高能量，使得保护层103能够高效的实现改性处理。During the preparation of the protective layer 103, since the thickness of the protective layer 103 itself is limited, when the protective layer 103 is modified by laser treatment, in order to avoid damage to the first doped layer 102 caused by the laser treatment, ultraviolet picosecond laser can be used for laser treatment. On the one hand, the low penetration of ultraviolet light can be used to minimize the probability of damage to the first doped layer 102 during the modification of the protective layer 103. On the other hand, the ultra-short pulse width and high energy of the picosecond laser can be used to efficiently achieve the modification of the protective layer 103.
参考上述针对激光改性处理的描述，激光改性的主要原理是利用高能射线功能基团的聚合反应进行改性，在激光功率过低的情况下，激光能量也相对较低，高能射线基团的密度以及聚合效率较低，无法实现高质量的激光改性；在激光功率过大的情况下，高能射线基团的密度过高同时激光自身的穿透能力也较强，容易对膜层和膜层下的其他膜层造成损伤。Referring to the above description of laser modification treatment, the main principle of laser modification is to use the polymerization reaction of high-energy ray functional groups for modification. When the laser power is too low, the laser energy is relatively low, and the high-energy ray groups The density and polymerization efficiency are low, making it impossible to achieve high-quality laser modification; when the laser power is too high, the density of high-energy ray groups is too high and the penetration ability of the laser itself is also strong, which can easily damage the film layer and Damage to other film layers beneath the film.
因此，在通过激光处理对保护层103正对金属化区121的部分进行改性处理的过程中，采用的激光类型可以是紫外皮秒激光，将激光波长设置在300nm至400nm的范围内，例如，310nm、325nm、350nm或者375nm等，同时将激光功率控制在4W至30W的范围内，例如5W、6.5W、8W、10W、12.5W、15W、20W、25W或者28.5W等。高效的对保护层103正对金属化区121的部分进行激光改性，同时有效降低第一掺杂层102由于保护层103改性而产生性能损伤的概率，从而提高太阳能电池的可靠性。Therefore, in the process of modifying the portion of the protective layer 103 facing the metallized region 121 through laser treatment, the laser type used may be an ultraviolet picosecond laser, and the laser wavelength is set in the range of 300 nm to 400 nm, for example , 310nm, 325nm, 350nm or 375nm, etc., while controlling the laser power within the range of 4W to 30W, such as 5W, 6.5W, 8W, 10W, 12.5W, 15W, 20W, 25W or 28.5W, etc. The laser modification is performed efficiently on the portion of the protective layer 103 facing the metallized region 121, and at the same time, the probability of performance damage of the first doped layer 102 due to the modification of the protective layer 103 is effectively reduced, thereby improving the reliability of the solar cell.
此外，在采用激光改性处理的过程中，还可以采用绿光激光进行激光改性，例如，采用皮秒或者纳秒的绿光激光，将激光波长设置在520nm至550nm的范围内，例如，522nm、525nm、532nm、540nm或者550nm等，并将激光功率设置在20W至60W的范围内，例如，22.5W、25W、30W、37.5W、45W或者55W等。利用具有更大穿透能力且能量较低的绿光激光进行处理，一方面能够使得保护层103中具有较大厚度的部分能够实现改性，另一方面能够降低保护层103在激光处理过程中由于激光能量过大而受损的概率，提高保护层103中改性后的部分与未改性部分之间的刻蚀特性差异。In addition, in the process of laser modification, green laser can also be used for laser modification, for example, picosecond or nanosecond green laser is used, the laser wavelength is set in the range of 520nm to 550nm, for example, 522nm, 525nm, 532nm, 540nm or 550nm, and the laser power is set in the range of 20W to 60W, for example, 22.5W, 25W, 30W, 37.5W, 45W or 55W, etc. The use of green laser with greater penetration ability and lower energy for treatment can, on the one hand, enable the portion with a larger thickness in the protective layer 103 to be modified, and on the other hand, can reduce the probability of the protective layer 103 being damaged due to excessive laser energy during the laser treatment process, and improve the difference in etching characteristics between the modified portion and the unmodified portion of the protective layer 103.
在一些实施例中，对保护层103进行激光处理的方法包括：对保护层103与金属化区121正对的部分进行激光扫描，且激光的扫描速度为104mm/S至105mm/S。In some embodiments, the method of laser processing the protective layer 103 includes: laser scanning the portion of the protective layer 103 directly facing the metallized area 121, and the scanning speed of the laser is 104 mm/S to 105 mm/ S.
参考上述针对激光改性处理的描述，通过采用紫外皮秒激光进行激光扫描的方式对保护层103进行改性的过程中，若扫描速度过低，则单位面积的保护层103接收到的高能射线功能基团和激光能量过多，容易导致保护层103发生融化或者损伤；若扫描速度过高，则单位面积的保护层103接收到的高能射线功能基团和激光能量过少，保护层103正对金属化区121的部分无法完成改性或者改性效果较差，后续无法准确形成第一刻蚀掩模131，并且整个激光处理过程的时长较大。Referring to the above description of the laser modification process, during the process of modifying the protective layer 103 by using ultraviolet picosecond laser for laser scanning, if the scanning speed is too low, the high-energy rays received by the protective layer 103 per unit area will Excessive functional groups and laser energy can easily cause the protective layer 103 to melt or be damaged; if the scanning speed is too high, the protective layer 103 per unit area will receive too few high-energy ray functional groups and laser energy, and the protective layer 103 will be damaged. The modification of the metallized region 121 cannot be completed or the modification effect is poor, the first etching mask 131 cannot be accurately formed subsequently, and the entire laser processing process takes a long time.
因此，在对保护层103与金属化区121正对的部分，通过紫外皮秒激光扫描的方式进行改性处理的过程中，可以将激光在保护层103上的扫描速度控制在104mm/S至105mm/S的范围内，例如,1.1×104mm/S、1.25×104mm/S、1.5×104mm/S、2×104mm/S、3×104mm/S、4.5×104mm/S、6×104mm/S、8×104mm/S或者9.5×104mm/S等。有效提升改性效果的同时，降低激光处理的整体时长。Therefore, during the modification process of the portion of the protective layer 103 facing the metallized area 121 by ultraviolet picosecond laser scanning, the scanning speed of the laser on the protective layer 103 can be controlled at 104 mm/ Within the range of S to 105 mm/S, for example, 1.1×104 mm/S, 1.25×104 mm/S, 1.5×104 mm/S, 2×104 mm/S, 3×104 mm /S, 4.5×10 4 mm/S, 6×104 mm/S, 8×104 mm/S or 9.5×104 mm/S, etc. While effectively improving the modification effect, it also reduces the overall duration of laser treatment.
此外，在采用皮秒级或者纳秒级的绿光激光对保护层103进行激光改性处理的过程中，可以将激光扫描速度控制在5×103mm/S至6×104mm/S的范围内，例如，6.5×103mm/S、8×103mm/S、1×104mm/S、1.5×104mm/S、2×104mm/S、3×104mm/S、4.5×104mm/S或者5.5×104mm/S等。使得绿光激光提供的高能射线基团的数量足够多的同时，进一步提升保护层103中激光改性部分的厚度，提高后续形成的第一刻蚀掩模131的质量。In addition, during the laser modification process of the protective layer 103 using a picosecond-level or nanosecond-level green light laser, the laser scanning speed can be controlled at 5×103 mm/S to 6×104 mm/S. within the range, for example, 6.5×103 mm/S, 8×103 mm/S, 1×104 mm/S, 1.5×104 mm/S, 2×104 mm/S, 3×104 mm/S, 4.5×104 mm/S or 5.5×104 mm/S, etc. While the number of high-energy ray groups provided by the green laser is sufficient, the thickness of the laser-modified portion of the protective layer 103 is further increased, and the quality of the subsequently formed first etching mask 131 is improved.
结合参考图1、图4和图7，在一些实施例中，形成保护层103的方法包括：在第一掺杂层102远离基底101的表面上形成第二掺杂层132，第二掺杂层132和第一掺杂层102具有不同的掺杂类型。图7为一种半成品太阳能电池的结构示意图，其中，X方向为第一方向。1, 4 and 7, in some embodiments, a method of forming the protective layer 103 includes: forming a second doped layer 132 on a surface of the first doped layer 102 away from the substrate 101. Layer 132 and first doped layer 102 have different doping types. Figure 7 is a schematic structural diagram of a semi-finished solar cell, in which the X direction is the first direction.
在形成保护层103的过程中，可以直接在第一掺杂层102远离基底101的表面上形成要给和第一掺杂层102具有不同掺杂类型的第二掺杂层132，利用第二掺杂层132作为保护层103，然后通过改性处理的方式对第二掺杂层132正对金属化区121的部分进行改性，从而使得第二掺杂层132正对金属化区121的部分和第二掺杂层132正对非金属化区122的部分以及第一掺杂层102均具有不同的刻蚀性能，然后对第二掺杂层132进行选择性刻蚀，去除第二掺杂层132正对非金属化区122的部分的同时，保留至少部分厚度的改性膜层，形成正对金属化区121的第一刻蚀掩模131。其中，第二掺杂层132的材料包括非晶硅、多晶硅或者碳化硅中的至少一者，第二掺杂层132改性和刻蚀过程中的结构变化可以参考图3至图4，最终形成的第一刻蚀掩模131如图4所示。In the process of forming the protective layer 103, a second doped layer 132 to be given a different doping type than the first doped layer 102 can be formed directly on the surface of the first doped layer 102 away from the substrate 101, using the second doped layer 132. The doped layer 132 serves as the protective layer 103, and then the portion of the second doped layer 132 facing the metallized region 121 is modified through modification treatment, so that the second doped layer 132 faces the metallized region 121. The portion of the second doped layer 132 facing the non-metallized region 122 and the first doped layer 102 all have different etching properties. Then, the second doped layer 132 is selectively etched to remove the second doped layer 132 . While the hybrid layer 132 faces the portion of the non-metallized region 122 , at least part of the thickness of the modified film layer is retained to form the first etching mask 131 facing the metallized region 121 . The material of the second doped layer 132 includes at least one of amorphous silicon, polycrystalline silicon or silicon carbide. The structural changes during the modification and etching process of the second doped layer 132 can be referred to Figures 3 to 4. Finally, The formed first etching mask 131 is shown in FIG. 4 .
直接利用第二掺杂层132作为保护层103，通过对第二掺杂层132的选择性刻蚀形成第一刻蚀掩模131，降低第一刻蚀掩模131的形成难度和成本，同时使得第一刻蚀掩模131能够对金属化区121具有足够的保护能力。The second doped layer 132 is directly used as the protective layer 103, and the first etching mask 131 is formed through selective etching of the second doped layer 132, thereby reducing the difficulty and cost of forming the first etching mask 131, and at the same time This enables the first etching mask 131 to have sufficient protection capability for the metallized region 121 .
此外，本申请实施例是以第二掺杂层132和第一掺杂层102具有不同掺杂类型为例进行的说明，在具体应用中，还可以将第二掺杂层132的掺杂类型设置成与第一掺杂层102掺杂类型相同，本申请实施例对此不做限制。In addition, the embodiment of the present application takes the second doped layer 132 and the first doped layer 102 as having different doping types as an example. In specific applications, the doping type of the second doped layer 132 can also be The doping type is set to be the same as that of the first doping layer 102, and the embodiment of the present application does not limit this.
在一些实施例中，形成第一刻蚀掩模131的方法包括：对第二掺杂层132进行湿法刻蚀，且湿法刻蚀采用的刻蚀液包含浓度为2%至5%的强碱。In some embodiments, the method of forming the first etching mask 131 includes: wet etching the second doped layer 132, and the etching liquid used in the wet etching contains an etching solution with a concentration of 2% to 5%. strong base.
在直接利用第二掺杂层132作为保护层103的情况下，通过对第二掺杂层132正对金属化区121的部分进行改性处理后，改性处理部分和未经改性处理部分具有不同的刻蚀特性，可以通过采用包含浓度为2%至5%的强碱的刻蚀液，自第二掺杂层132远离基底101的一侧对第二掺杂层132进行整面的湿法刻蚀。例如，在第二掺杂层132的材料为非晶硅或者多晶硅的情况下，可以采用浓度为2%至5%的NaOH、浓度小于2%的添加剂以及占比高于93%的去离子水混合形成刻蚀液。然后将刻蚀液的温度控制在60℃至90℃的范围内，例如，65℃、70℃、80℃或者85℃等，自第二掺杂层132远离基底101的表面，对第二掺杂层132进行时长处于50S至400S的整面湿法刻蚀，例如，刻蚀时长为60S、75S、100S、150S、200S、275S或者375S等。In the case where the second doped layer 132 is directly used as the protective layer 103, by modifying the portion of the second doped layer 132 facing the metallized region 121, the modified portion and the unmodified portion With different etching characteristics, the entire surface of the second doped layer 132 can be etched from the side of the second doped layer 132 away from the substrate 101 by using an etching solution containing a strong alkali concentration of 2% to 5%. Wet etching. For example, when the material of the second doped layer 132 is amorphous silicon or polysilicon, NaOH with a concentration of 2% to 5%, additives with a concentration of less than 2%, and deionized water with a proportion greater than 93% can be used. Mix to form etching solution. Then, the temperature of the etching solution is controlled in the range of 60°C to 90°C, for example, 65°C, 70°C, 80°C or 85°C, etc., and the second doped layer 132 is away from the surface of the substrate 101. The impurity layer 132 is wet etched over the entire surface for a duration of 50S to 400S, for example, the etching duration is 60S, 75S, 100S, 150S, 200S, 275S, or 375S.
从而有效的去除第二掺杂层132正对非金属化区122的部分，暴露出第一掺杂层102的非金属化区122。其中，刻蚀时长和第二掺杂层132的厚度有关，本申请实施例对此不做限制。利用包含强碱的刻蚀液对第二掺杂层132进行湿法刻蚀，并将刻蚀时长控制在适当的范围内，有效去除第二掺杂层132中未经改性处理的部分，同时使得激光改性部分至少保留部分厚度，有效的形成第一刻蚀掩模131。Thus, the portion of the second doping layer 132 facing the non-metallized area 122 is effectively removed, exposing the non-metallized area 122 of the first doping layer 102. The etching time is related to the thickness of the second doping layer 132, and the embodiment of the present application does not limit this. The second doping layer 132 is wet-etched using an etching solution containing a strong alkali, and the etching time is controlled within an appropriate range, so as to effectively remove the unmodified portion of the second doping layer 132, and at the same time, the laser modified portion at least retains a portion of the thickness, thereby effectively forming the first etching mask 131.
结合参考图1和图8至图10，在一些实施例中，形成保护层103的方法还包括：在第一掺杂层102远离基底101的表面上形成本征半导体层30，向本征半导体层30中掺杂目标掺杂元素，形成层叠设置在第一掺杂层102上的第二掺杂层132和绝缘层133，绝缘层133与第一掺杂层102接触；对保护层103与金属化区121正对的部分进行改性处理的方法包括：对第二掺杂层132与金属化区121正对的部分进行改性处理。图8为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向；图9为另一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向；图10均为另一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIG. 1 and FIGS. 8 to 10 , in some embodiments, the method of forming the protective layer 103 further includes: forming an intrinsic semiconductor layer 30 on a surface of the first doped layer 102 away from the substrate 101 . The target doping element is doped into the layer 30 to form a second doped layer 132 and an insulating layer 133 stacked on the first doped layer 102. The insulating layer 133 is in contact with the first doped layer 102; the protective layer 103 and The method of modifying the portion facing the metallized region 121 includes: modifying the portion of the second doping layer 132 facing the metallized region 121 . Figure 8 is a schematic diagram of the overall structure of a semi-finished solar cell, in which the X direction is the first direction; Figure 9 is a schematic diagram of the overall structure of another semi-finished solar cell, in which the X direction is the first direction; Figure 10 is a schematic diagram of another semi-finished solar cell. Schematic diagram of the overall structure of a semi-finished solar cell, in which the X direction is the first direction.
在形成保护层103的过程中，仅形成一层第二掺杂层132作为保护层103的情况下，由于第一掺杂层102和激光改性后的第二掺杂层132的刻蚀特性差异有限，且第二掺杂层132自身厚度也有限，在进行保护层103和第一刻蚀掩模131去除过程中，容易对第一掺杂层102的金属化区121造成损伤。因此，可以将保护层103设置成由层叠设置的绝缘层133和第二掺杂层132构成，且绝缘层133位于第一掺杂层102和第二掺杂层132之间。从而利用和第二掺杂层132以及第一掺杂层102具有较大刻蚀特性差异的绝缘层133作为刻蚀第二掺杂层132的刻蚀停止层，并使得第一掺杂层102也能够作为绝缘层133的刻蚀停止层，从而尽可能降低金属化区121在第一掺杂层102图形化处理过程中受到的损伤。In the process of forming the protective layer 103, when only one second doped layer 132 is formed as the protective layer 103, due to the etching characteristics of the first doped layer 102 and the laser modified second doped layer 132 The difference is limited, and the thickness of the second doped layer 132 itself is also limited. During the removal process of the protective layer 103 and the first etching mask 131 , it is easy to cause damage to the metallized region 121 of the first doped layer 102 . Therefore, the protective layer 103 may be configured to be composed of a stacked insulating layer 133 and a second doped layer 132 , and the insulating layer 133 is located between the first doped layer 102 and the second doped layer 132 . Therefore, the insulating layer 133 having a larger etching characteristic difference from the second doped layer 132 and the first doped layer 102 is used as an etching stop layer for etching the second doped layer 132, and the first doped layer 102 is It can also serve as an etching stop layer for the insulating layer 133, thereby minimizing damage to the metallized region 121 during the patterning process of the first doped layer 102.
而先在第一掺杂层102远离基底101的表面上形成本征半导体层30，然后通过离子注入或者离子扩散的方式将目标掺杂元素掺杂到本征半导体层30中，目标掺杂元素和半导体材料在本征半导体层30和第一掺杂层102之间会形成一侧绝缘层。以第一掺杂层102和第二掺杂层132均为多晶硅层，目标掺杂元素为硼为例，通过硼扩散的方式向本征多晶硅层中掺杂硼的过程中，第一掺杂层102和第二掺杂层132之间会形成一层硼硅玻璃层；类似的，在目标掺杂元素为磷的情况下，通过磷扩散的方式掺杂过程中，会在第一掺杂层102和第二掺杂层132之间会形成一层磷硅玻璃层，硼硅玻璃和磷硅玻璃均不导电。The intrinsic semiconductor layer 30 is first formed on the surface of the first doped layer 102 away from the substrate 101, and then the target doping element is doped into the intrinsic semiconductor layer 30 by ion implantation or ion diffusion. The target doping element The semiconductor material forms an insulating layer on one side between the intrinsic semiconductor layer 30 and the first doped layer 102 . Taking the first doping layer 102 and the second doping layer 132 as both polysilicon layers and the target doping element is boron, for example, during the process of doping boron into the intrinsic polysilicon layer through boron diffusion, the first doping A layer of borosilicate glass will be formed between the layer 102 and the second doped layer 132; similarly, when the target doping element is phosphorus, during the doping process through phosphorus diffusion, the first doping layer will be formed. A layer of phosphosilicate glass is formed between layer 102 and second doped layer 132. Neither borosilicate glass nor phosphosilicate glass is electrically conductive.
因此，形成保护层103的过程中，可以先在第一掺杂层102远离基底101的表面上形成本征半导体层30，形成图8所示结构；然后通过离子扩散或者离子注入的方式向本征半导体层30中掺杂目标掺杂元素，形成如图9所示层叠设置在第一掺杂层102上的第二掺杂层132和绝缘层133，绝缘层133与第一掺杂层102接触。然后在形成第一刻蚀掩模131的过程中，在对保护层103与金属化区121正对的部分进行改性处理的过程中，直接对第二掺杂层132与金属化区121正对的部分进行改性处理，形成图10所示结构。后续逐步去除第二掺杂层132未改性的部分和绝缘层133与非金属化区122正对的部分，形成正对金属化区121的第一刻蚀掩模131。Therefore, in the process of forming the protective layer 103, the intrinsic semiconductor layer 30 can be first formed on the surface of the first doped layer 102 away from the substrate 101 to form the structure shown in FIG. 8; and then the intrinsic semiconductor layer 30 can be formed by ion diffusion or ion implantation. The semiconductor layer 30 is doped with the target doping element to form a second doped layer 132 and an insulating layer 133 stacked on the first doped layer 102 as shown in FIG. 9 . The insulating layer 133 and the first doped layer 102 are touch. Then, in the process of forming the first etching mask 131, in the process of modifying the portion of the protective layer 103 facing the metallized region 121, the second doped layer 132 directly facing the metallized region 121 is The parts are modified to form the structure shown in Figure 10. Subsequently, the unmodified portion of the second doped layer 132 and the portion of the insulating layer 133 facing the non-metallized region 122 are gradually removed to form a first etching mask 131 facing the metallized region 121 .
通过先沉积本征半导体层30，然后进行目标元素掺杂的方式直接形成由层叠设置的绝缘层133和第二掺杂层132构成的保护层103，使得最终形成的第一刻蚀掩模131对第一掺杂层102的金属化区121具有良好的保护能力，同时利用刻蚀特性之间的差异，使得绝缘层133以及第二掺杂层132的去除对金属化区121的损伤尽可能小，进一步提升第一掺杂层102的图形化效果，从而提高太阳能电池的光电转换性能。The protective layer 103 composed of the stacked insulating layer 133 and the second doped layer 132 is directly formed by first depositing the intrinsic semiconductor layer 30 and then doping the target element, so that the first etching mask 131 is finally formed. It has good protection ability for the metallized region 121 of the first doped layer 102, and at the same time, the difference between the etching characteristics is used to make the removal of the insulating layer 133 and the second doped layer 132 damage the metallized region 121 as much as possible. Small, further improving the patterning effect of the first doped layer 102, thereby improving the photoelectric conversion performance of the solar cell.
此外，结合参考图9和图11至图13，图11为一种半成品太阳能电池的结构示意图，其中，X方向为第一方向；图12为另一种半成品太阳能电池的结构示意图，其中，X方向为第一方向；图13为另一种半成品太阳能电池的结构示意图，其中，X方向为第一方向。在太阳能电池为全背电极接触（Interdigitated Back Contact，IBC）太阳能电池的情况下，通常是先在基底101背面沉积第一掺杂层102，然后根据电池的电极规划，沿垂直基底101正面的方向对第一掺杂层102和基底101进行刻蚀，形成若干个贯穿第一掺杂层102厚度，并向基底101内部延伸的开孔。然后通过整面沉积的方式在开孔底面以及第一掺杂层102远离基底101的表面上形成第二掺杂层132。参考上述的分析和描述，相当于第一掺杂层102上具有由第二掺杂层132和绝缘层133构成的保护层103。In addition, with reference to Figure 9 and Figures 11 to 13, Figure 11 is a schematic structural diagram of a semi-finished solar cell, in which the X direction is the first direction; Figure 12 is a schematic structural diagram of another semi-finished solar cell, in which X The direction is the first direction; Figure 13 is a schematic structural diagram of another semi-finished solar cell, in which the X direction is the first direction. When the solar cell is an Interdigitated Back Contact (IBC) solar cell, the first doping layer 102 is usually deposited on the back of the substrate 101 first, and then according to the electrode planning of the cell, along the direction perpendicular to the front of the substrate 101 The first doped layer 102 and the substrate 101 are etched to form several openings that penetrate the thickness of the first doped layer 102 and extend into the substrate 101 . Then, the second doped layer 132 is formed on the bottom surface of the opening and the surface of the first doped layer 102 away from the substrate 101 by full-surface deposition. Referring to the above analysis and description, it is equivalent to having a protective layer 103 composed of a second doped layer 132 and an insulating layer 133 on the first doped layer 102 .
因此，在进行第一掺杂层102图形化的过程中，可以根据电池的电极设计，将第一掺杂层102看作由与电极正对的电极区20和不与电极正对的非电极区21构成，通过激光处理的方式对覆盖在第一掺杂层102上的第二掺杂层132与电极区20正对的部分进行激光改性，形成如图11所示的结构。然后逐步去除第一掺杂层102上未改性的第二掺杂层132和与非电极区21正对的绝缘层133，形成第一掺杂层102的第一刻蚀掩模131，即图12所示的结构。然后基于第一刻蚀掩模131进行第一掺杂层102的图形化，并去除第一刻蚀掩模131，形成如图13所示的结构。相较于对第一掺杂层102上与非电极区21正对的第二掺杂层132进行激光处理实现图形化的方式，大大降低了激光处理的面积，从而使得IBC电池部分掺杂导电层图形化的成本和时间下降，并且可以直接与当前的产线相结合。Therefore, during the patterning process of the first doped layer 102, according to the electrode design of the battery, the first doped layer 102 can be regarded as consisting of the electrode region 20 facing the electrode and the non-electrode not facing the electrode. The portion of the second doped layer 132 covering the first doped layer 102 facing the electrode region 20 is laser modified by laser treatment to form a structure as shown in FIG. 11 . Then, the unmodified second doped layer 132 on the first doped layer 102 and the insulating layer 133 facing the non-electrode region 21 are gradually removed to form the first etching mask 131 of the first doped layer 102, that is, The structure shown in Figure 12. Then, the first doped layer 102 is patterned based on the first etching mask 131, and the first etching mask 131 is removed, forming a structure as shown in FIG. 13. Compared with the method of patterning the second doped layer 132 on the first doped layer 102 opposite to the non-electrode region 21 by laser processing, the area of the laser treatment is greatly reduced, thereby making the IBC cell partially doped and conductive. The cost and time of layer patterning is reduced and can be directly integrated into current production lines.
结合参考图9和图14，在一些实施例中，形成第二掺杂层132前还包括：在第一掺杂层102远离基底101的表面上形成绝缘层133；形成第二掺杂层132包括：在绝缘层133远离基底101的表面上形成第二掺杂层132；对保护层103与金属化区121正对的部分进行改性处理的方法包括：对第二掺杂层132与金属化区121正对的部分进行改性处理。图14为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIG9 and FIG14, in some embodiments, before forming the second doping layer 132, the method further includes: forming an insulating layer 133 on a surface of the first doping layer 102 away from the substrate 101; forming the second doping layer 132 includes: forming the second doping layer 132 on a surface of the insulating layer 133 away from the substrate 101; and the method of modifying the portion of the protective layer 103 facing the metallization area 121 includes: modifying the portion of the second doping layer 132 facing the metallization area 121. FIG14 is a schematic diagram of the overall structure of a semi-finished solar cell, wherein the X direction is the first direction.
参考上述针对保护层103制备的描述，在采用原位掺杂的方式形成第二掺杂层132的情况下，第一掺杂层102和第二掺杂层132之间通常无法形成具有足够厚度的绝缘介质层，由于第一掺杂层102和第二掺杂层132之间刻蚀特性差异有限，且第二掺杂层132厚度有限，因此，第一掺杂层102的金属化区121受损概率较大。Referring to the above description of the preparation of the protective layer 103, when the second doping layer 132 is formed by in-situ doping, an insulating dielectric layer with sufficient thickness cannot usually be formed between the first doping layer 102 and the second doping layer 132. Since the difference in etching characteristics between the first doping layer 102 and the second doping layer 132 is limited, and the thickness of the second doping layer 132 is limited, the metallization area 121 of the first doping layer 102 is more likely to be damaged.
因此，参考图14，形成保护层103的过程中，可以先在第一掺杂层102远离基底101的表面上形成绝缘层133，然后在绝缘层133远离基底101的表面上形成通过原位掺杂制备出的第二掺杂层132，形成图9所示的结构，利用绝缘层133和第二掺杂层132共同构成保护层103。以第一掺杂层102和第二掺杂层132材料为多晶硅为例，绝缘层133的材料包括氧化硅、氮化硅或者碳化硅中的至少一者，使得绝缘层133能够作为第二掺杂层132的刻蚀停止层，第一掺杂层102也能够作为绝缘层133的刻蚀停止层，进而尽可能降低第一掺杂层102金属化区121的图形化损伤，提高第一掺杂层102的图形化效果和电池的光电转换性能。Therefore, referring to FIG. 14 , in the process of forming the protective layer 103 , the insulating layer 133 can be formed on the surface of the first doped layer 102 away from the substrate 101 first, and then the insulating layer 133 can be formed on the surface of the insulating layer 133 away from the substrate 101 by in-situ doping. The second doped layer 132 is prepared by doping to form the structure shown in FIG. 9 , and the insulating layer 133 and the second doped layer 132 jointly form the protective layer 103 . Taking the material of the first doped layer 102 and the second doped layer 132 as polysilicon as an example, the material of the insulating layer 133 includes at least one of silicon oxide, silicon nitride or silicon carbide, so that the insulating layer 133 can serve as the second doped layer. As an etching stop layer for the doped layer 132, the first doped layer 102 can also serve as an etching stop layer for the insulating layer 133, thus minimizing the patterning damage to the metallized region 121 of the first doped layer 102 and improving the first doped layer 102. The patterning effect of the hybrid layer 102 and the photoelectric conversion performance of the battery.
结合参考图10、图15和图16，在一些实施例中，形成第一刻蚀掩模131的方法包括：对保护层103进行第一湿法刻蚀，且第一湿法刻蚀采用的刻蚀液包含浓度为2%至5%的强碱；对保护层103进行第二湿法刻蚀，且第二湿法刻蚀采用的刻蚀液包含浓度为2%至5%的弱酸和浓度为2%至20%的强酸。图15为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向；图16为另一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIG. 10 , FIG. 15 and FIG. 16 , in some embodiments, the method of forming the first etching mask 131 includes: performing a first wet etching on the protective layer 103 , and the etching solution used in the first wet etching contains a strong base with a concentration of 2% to 5%; performing a second wet etching on the protective layer 103 , and the etching solution used in the second wet etching contains a weak acid with a concentration of 2% to 5% and a strong acid with a concentration of 2% to 20%. FIG. 15 is a schematic diagram of the overall structure of a semi-finished solar cell, wherein the X direction is the first direction; FIG. 16 is a schematic diagram of the overall structure of another semi-finished solar cell, wherein the X direction is the first direction.
在将保护层103设置成由层叠设置的绝缘层133和第二掺杂层132构成后，由于绝缘层133和第二掺杂层132及第一掺杂层102之间刻蚀特性差异明显，绝缘层133可以作为第二掺杂层132的刻蚀停止层，第一掺杂层102也能够作为绝缘层133的刻蚀停止层。因此，在形成第一刻蚀掩模131的过程中，可以通过两步湿法刻蚀逐步去除第二掺杂层132中未改性的部分以及绝缘层133正对非金属化区122的部分，从而得到第一刻蚀掩模131。After the protective layer 103 is configured to consist of the stacked insulating layer 133 and the second doped layer 132, due to the obvious difference in etching characteristics between the insulating layer 133 and the second doped layer 132 and the first doped layer 102, The insulating layer 133 can serve as an etching stop layer for the second doped layer 132 , and the first doped layer 102 can also serve as an etching stop layer for the insulating layer 133 . Therefore, in the process of forming the first etching mask 131, the unmodified portion of the second doped layer 132 and the portion of the insulating layer 133 facing the non-metallized region 122 can be gradually removed through two-step wet etching. , thereby obtaining the first etching mask 131.
以第二掺杂层132的材料为多晶硅，绝缘层133的材料为氧化硅为例，可以先采用由浓度为2%至5%的NaOH或者KOH、浓度小于2%的添加剂和占比高于93%的去离子水构成的刻蚀液，对保护层103进行第一湿法刻蚀，利用改性部分和非改性部分和刻蚀液反应速度的差异，去除非改性部分，暴露出绝缘层133正对非金属化区122的部分，形成图15所示的结构。然后采用浓度为2%至5%的HF、浓度为2%至20%的HCL或者HNO3、浓度小于2%的添加剂和占比高于93%的去离子水构成的刻蚀液，对保护层103进行第二湿法刻蚀，去除绝缘层133与非金属化区122的部分，从而形成图16所示的第一刻蚀掩模131，第一刻蚀掩模131和金属化区121正对。利用两步湿法刻蚀的方式，借助绝缘层133和第一掺杂层102以及第二掺杂层132的刻蚀特性差异，准确形成暴露出第一掺杂层102，并尽可能降低后续第一掺杂层102的图形化损伤。Taking the material of the second doped layer 132 as polysilicon and the material of the insulating layer 133 as silicon oxide as an example, NaOH or KOH with a concentration of 2% to 5%, additives with a concentration of less than 2% and a proportion higher than Use an etching solution composed of 93% deionized water to perform the first wet etching on the protective layer 103. The difference in reaction speed between the modified part and the non-modified part and the etching solution is used to remove the non-modified part and expose the The portion of the insulating layer 133 facing the non-metalized region 122 forms the structure shown in FIG. 15 . Then use an etching solution composed of HF with a concentration of 2% to 5%, HCL or HNO3 with a concentration of 2% to 20%, additives with a concentration of less than 2% and deionized water accounting for more than 93%, to protect the The layer 103 is subjected to a second wet etching to remove parts of the insulating layer 133 and the non-metallized region 122, thereby forming the first etching mask 131 shown in FIG. 16, the first etching mask 131 and the metallized region 121. Is on. A two-step wet etching method is used to accurately form and expose the first doped layer 102 by taking advantage of the differences in etching characteristics of the insulating layer 133 and the first doped layer 102 and the second doped layer 132, and minimize the subsequent Patterned damage to first doped layer 102 .
此外，通过第一湿法刻蚀去除第二掺杂层132中未改性部分可以参考前面提到的刻蚀参数，通过第二湿法刻蚀去除绝缘层133正对非金属化区122的部分时，可以将刻蚀液温度控制在15℃至25℃的范围内，例如，17℃、22℃或者25℃等接近室温的温度，对绝缘层133进行时长为50S至300S的刻蚀，例如，刻蚀时长为75S、100S、150S、200S或者275S等。从而有效的将正对非金属化区122的绝缘层133去除，同时，降低和金属化区121正对的绝缘层133的损伤，从而降低金属化区121在图形化过程中受损的概率。In addition, the etching parameters mentioned above can be referred to when removing the unmodified portion of the second doping layer 132 by the first wet etching. When removing the portion of the insulating layer 133 facing the non-metallized area 122 by the second wet etching, the temperature of the etching solution can be controlled within the range of 15°C to 25°C, for example, 17°C, 22°C or 25°C, which is close to room temperature, and the insulating layer 133 is etched for 50S to 300S, for example, the etching time is 75S, 100S, 150S, 200S or 275S, etc. Thus, the insulating layer 133 facing the non-metallized area 122 is effectively removed, and at the same time, the damage to the insulating layer 133 facing the metallized area 121 is reduced, thereby reducing the probability of damage to the metallized area 121 during the patterning process.
结合参考图6、图16和图17，在一些实施例中，对第一掺杂层102进行刻蚀处理的方法包括：对第一掺杂层102远离基底101的一侧进行湿法刻蚀，去除第二掺杂层132，并将非金属化区122远离基底101的表面转换为凹凸表面；去除第一刻蚀掩模131的步骤还包括：去除绝缘层133。图17为一种半成品太阳能电池的整体结构示意图，其中，X方向为第一方向。With reference to FIGS. 6 , 16 and 17 , in some embodiments, a method for etching the first doped layer 102 includes: wet etching the side of the first doped layer 102 away from the substrate 101 , remove the second doping layer 132, and convert the surface of the non-metallized region 122 away from the substrate 101 into a concave and convex surface; the step of removing the first etching mask 131 also includes: removing the insulating layer 133. Figure 17 is a schematic diagram of the overall structure of a semi-finished solar cell, in which the X direction is the first direction.
在对第一掺杂层102进行刻蚀处理的过程中，可以采用包含浓度为2%至5%的强碱的刻蚀液进行湿法刻蚀，以第一掺杂层102和第二掺杂层132的材料均为多晶硅为例，由于激光改性后的第二掺杂层132相较于未改性前的刻蚀速率明显下降，因此，可以采用浓度为2%至5%的NaOH、浓度小于2%的添加剂以及占比高于93%的去离子水混合形成刻蚀液。然后将刻蚀液的温度控制在60℃至90℃的范围内，例如，65℃、70℃、80℃或者85℃等，在第一掺杂层102远离基底101的一侧对第一掺杂层102和改性后的第二掺杂层132进行时长处于200S至1200S的整面湿法刻蚀。例如，将刻蚀时长设置为250S、300S、350S、400S、475S、500S、600S、750S、900S或者1100S等，有效的去除改性后的第二掺杂层132，同时，将第一掺杂层102非金属化区122远离基底101一侧的表面转换为凹凸表面，例如，将非金属化区122远离基底101的一侧表面转换为由多个金字塔结构构成的绒面，形成如图17所示的结构。During the etching process of the first doped layer 102, an etching solution containing a strong alkali with a concentration of 2% to 5% may be used for wet etching. Taking the material of the doped layer 132 as polysilicon as an example, since the etching rate of the second doped layer 132 after laser modification is significantly reduced compared with that before the modification, NaOH with a concentration of 2% to 5% can be used. , additives with a concentration less than 2% and deionized water accounting for more than 93% are mixed to form an etching solution. Then, the temperature of the etching solution is controlled within the range of 60°C to 90°C, for example, 65°C, 70°C, 80°C or 85°C, etc., and the first doped layer 102 is doped on the side away from the substrate 101. The doped layer 102 and the modified second doped layer 132 are wet etched over the entire surface for a duration of 200S to 1200S. For example, the etching duration is set to 250S, 300S, 350S, 400S, 475S, 500S, 600S, 750S, 900S or 1100S, etc., to effectively remove the modified second doped layer 132, and at the same time, the first doped layer 132 is removed. The surface of the non-metalized area 122 of the layer 102 on the side away from the substrate 101 is converted into a concave and convex surface. For example, the surface on the side of the non-metalized area 122 away from the substrate 101 is converted into a textured surface composed of multiple pyramid structures, as shown in Figure 17 The structure shown.
在完成对非金属化区122远离基底101一侧表面的形貌调整后，可以采用采用浓度为2%至5%的HF、浓度为2%至20%的HCL或者HNO3、浓度小于2%的添加剂和占比高于93%的去离子水构成的刻蚀液，对暴露出的绝缘层133残留进行刻蚀，去除剩余的绝缘层133，完成第一掺杂层102的图形化，形成图6所示的结构。具体的刻蚀参数可以参考上述区域绝缘层133正对非金属化区122部分的刻蚀参数。After completing the adjustment of the morphology of the surface of the non-metalized region 122 away from the substrate 101, HF with a concentration of 2% to 5%, HCL with a concentration of 2% to 20% or HNO3 with a concentration less than 2% can be used. The etching solution composed of additives and deionized water accounting for more than 93% is used to etch the exposed residue of the insulating layer 133, remove the remaining insulating layer 133, and complete the patterning of the first doped layer 102 to form a pattern. The structure shown in 6. For specific etching parameters, please refer to the etching parameters of the portion of the region insulating layer 133 facing the non-metallized region 122 mentioned above.
在完成对第一掺杂层102的图形化处理后，可以直接在第一掺杂层102的金属化区121上进行电极浆料的印刷和电极制备，也可以先在第一掺杂层102上进行减反射层的沉积，然后在减反射层远离基底101的表面上印刷电极浆料，并通过烧结形成贯穿减反射层与第一掺杂层102金属化区121电接触的电极。After completing the patterning process of the first doped layer 102 , printing of the electrode paste and electrode preparation can be performed directly on the metallized region 121 of the first doped layer 102 , or the first doped layer 102 can be firstly printed. An anti-reflective layer is deposited on the anti-reflective layer, and then an electrode paste is printed on the surface of the anti-reflective layer away from the substrate 101, and is sintered to form an electrode that penetrates the anti-reflective layer and is in electrical contact with the metallized region 121 of the first doped layer 102.
值得一提的是，上述各实施例中的特征不仅可以单独存在于太阳能电池制备中，在不存在技术冲突的情况下，在不超出本申请实施例发明构思的前提下，各实施例中的特征还可以相互结合实施，本申请实施例在此就不再赘述。It is worth mentioning that the features in the above embodiments can not only exist alone in the preparation of solar cells, but also in the absence of technical conflicts and without exceeding the inventive concept of the embodiments of the present application. The features can also be implemented in combination with each other, and the details will not be described again in the embodiments of this application.
综上，本申请实施例提供了一种太阳能电池制备方法，在第一掺杂层远离基底的表面上形成保护层，然后对保护层和第一掺杂层中金属化区正对的部分进行改性处理，从而通过刻蚀处理的方式去除保护层与非金属化区正对的部分，进而形成覆盖在金属化区上方的第一刻蚀掩模，然后基于第一刻蚀掩模对第一掺杂层进行图形化处理，保留金属化区形貌的同时，将非金属化区远离基底的表面形貌转换为凹凸表面，然后去除第一刻蚀掩模，得到图形化处理后的第一掺杂层。对保护层与金属化区正对的部分进行改性处理，并通过刻蚀处理形成覆盖在金属化区上的第一刻蚀掩模，显著降低了第一刻蚀掩模制备过程中需要进行改性处理的部分在保护层中的占比，提高了第一刻蚀掩模的制备效率，降低了第一刻蚀掩模制备所需的时间和成本，进而降低了太阳能电池图形化处理的成本和难度。In summary, the embodiments of the present application provide a solar cell preparation method. A protective layer is formed on the surface of the first doped layer away from the substrate, and then the protective layer and the portion of the first doped layer facing the metallized region are processed. Modification treatment, whereby the portion of the protective layer facing the non-metallized area is removed by etching, thereby forming a first etching mask covering the metallized area, and then based on the first etching mask, the first etching mask is A doped layer is patterned to retain the morphology of the metallized area while converting the surface morphology of the non-metallized area away from the substrate into a concave and convex surface, and then the first etching mask is removed to obtain the third patterned surface. a doped layer. The part of the protective layer facing the metallized area is modified and etched to form a first etching mask covering the metallized area, which significantly reduces the need for preparation of the first etching mask. The proportion of the modified part in the protective layer improves the preparation efficiency of the first etching mask, reduces the time and cost required for the preparation of the first etching mask, and thereby reduces the cost of solar cell patterning processing. Cost and difficulty.
相应的，本申请实施例还提供了一种太阳能电池，参考图6，包括：基底101；位于基底101表面上的第一掺杂层102，第一掺杂层102包括沿第一方向交替排布的金属化区121和非金属化区122，非金属化区122远离基底101的表面为凹凸表面。Correspondingly, an embodiment of the present application also provides a solar cell. Referring to Figure 6, it includes: a substrate 101; a first doped layer 102 located on the surface of the substrate 101. The first doped layer 102 includes alternating rows of cells arranged along a first direction. The metallized area 121 and the non-metalized area 122 of the cloth, and the surface of the non-metalized area 122 away from the substrate 101 is a concave and convex surface.
相应的，本申请实施例还提供了一种光伏组件，参考图18，包括电池串1101，电池串1101由多个上述的太阳能电池连接而成；封装层1102，封装层1102用于覆盖电池串1101的表面；盖板1103，盖板1103用于覆盖封装层1102远离电池串1101的表面。太阳能电池以整片或者多分片的形式电连接形成多个电池串1101，多个电池串1101以串联和/或并联的方式进行电连接。Correspondingly, the embodiment of the present application also provides a photovoltaic component. Refer to Figure 18, including a battery string 1101. The battery string 1101 is connected by a plurality of the above-mentioned solar cells; an encapsulation layer 1102. The encapsulation layer 1102 is used to cover the battery string. The surface of 1101; the cover plate 1103. The cover plate 1103 is used to cover the surface of the packaging layer 1102 away from the battery string 1101. The solar cells are electrically connected in the form of a whole piece or multiple slices to form multiple battery strings 1101, and the multiple battery strings 1101 are electrically connected in series and/or in parallel.
在一些实施例中，多个电池串1101之间可以通过导电带1104电连接。封装层1102覆盖太阳能电池的正面以及背面，具体地，封装层1102可以为乙烯-乙酸乙烯共聚物（EVA）胶膜、聚乙烯辛烯共弹性体（POE）胶膜或者聚对苯二甲酸乙二醇酯（PET）胶膜等有机封装胶膜。在一些实施例中，盖板1103可以为玻璃盖板、塑料盖板等具有透光功能的盖板1103。盖板1103朝向封装层1102的表面可以为凹凸表面，从而增加入射光线的利用率。In some embodiments, multiple battery strings 1101 may be electrically connected through conductive strips 1104 . The encapsulation layer 1102 covers the front and back of the solar cell. Specifically, the encapsulation layer 1102 can be an ethylene-vinyl acetate copolymer (EVA) film, a polyethylene octene co-elastomer (POE) film or a polyethylene terephthalate film. Polyol ester (PET) film and other organic encapsulating films. In some embodiments, the cover 1103 can be a glass cover, a plastic cover, or other cover 1103 with a light-transmitting function. The surface of the cover plate 1103 facing the encapsulation layer 1102 may be a concave and convex surface, thereby increasing the utilization rate of incident light.
本申请虽然以较佳实施例公开如上，但并不是用来限定权利要求，任何本领域技术人员在不脱离本申请构思的前提下，都可以做出若干可能的变动和修改，而不偏离本申请的精神和范围，因此本申请的保护范围应当以本申请权利要求所界定的范围为准。Although this application discloses preferred embodiments as above, it is not intended to limit the claims. Any person skilled in the art can make several possible changes and modifications without departing from the concept of this application. Therefore, the scope of protection of this application shall be subject to the scope defined by the claims of this application.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410233595.9ACN117810310B (en) | 2024-02-29 | 2024-02-29 | Solar cell preparation method, solar cell and photovoltaic module |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410233595.9ACN117810310B (en) | 2024-02-29 | 2024-02-29 | Solar cell preparation method, solar cell and photovoltaic module |
| Publication Number | Publication Date |
|---|---|
| CN117810310Atrue CN117810310A (en) | 2024-04-02 |
| CN117810310B CN117810310B (en) | 2024-06-07 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410233595.9AActiveCN117810310B (en) | 2024-02-29 | 2024-02-29 | Solar cell preparation method, solar cell and photovoltaic module |
| Country | Link |
|---|---|
| CN (1) | CN117810310B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119789584A (en)* | 2025-03-10 | 2025-04-08 | 晶科能源(海宁)有限公司 | Photovoltaic cell and method for manufacturing same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345042A (en)* | 2000-06-01 | 2001-12-14 | Sony Corp | Manufacturing method of cold cathode field electron emission element, and manufacturing method of display device of cold cathode field electron emission |
| US20040048200A1 (en)* | 2002-09-11 | 2004-03-11 | Renesas Technology Corp. | Method for forming fine pattern on substrate by using resist pattern, and resist surface treatment agent |
| JP2006024730A (en)* | 2004-07-08 | 2006-01-26 | Sony Corp | Manufacturing method of semiconductor device |
| JP2006210394A (en)* | 2005-01-25 | 2006-08-10 | Canon Inc | Method for forming irregularities on the surface of a silicon substrate |
| WO2008056614A1 (en)* | 2006-11-06 | 2008-05-15 | Tokyo Electron Limited | Reflow method, pattern-forming method, and method for manufacturing tft |
| US20080258183A1 (en)* | 2007-04-23 | 2008-10-23 | Infineon Technologies Ag | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching |
| CN102017165A (en)* | 2008-02-15 | 2011-04-13 | 罗伯特.博世有限公司 | Method for the production of monocrystalline n-silicon solar cells, and solar cell produced according to such a method |
| JP2011238846A (en)* | 2010-05-12 | 2011-11-24 | Mitsubishi Electric Corp | Solar cell manufacturing method |
| CN103460398A (en)* | 2011-03-30 | 2013-12-18 | 韩华石油化学株式会社 | Solar cell and method for manufacturing the same |
| CN104011881A (en)* | 2011-12-21 | 2014-08-27 | 太阳能公司 | Hybrid Polysilicon Heterojunction Back Contact Cell |
| US20230369530A1 (en)* | 2020-10-09 | 2023-11-16 | International Solar Energy Research Center Konstanz E.V. | Method for local modification of etching resistance in a silicon layer, use of this method in the productions of passivating contact solar cells and thus-created solar cell |
| CN117374169A (en)* | 2023-12-07 | 2024-01-09 | 浙江晶科能源有限公司 | Preparation method of back contact solar cell and back contact solar cell |
| CN117613114A (en)* | 2023-11-30 | 2024-02-27 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of passivated contact solar cell and passivated contact solar cell |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345042A (en)* | 2000-06-01 | 2001-12-14 | Sony Corp | Manufacturing method of cold cathode field electron emission element, and manufacturing method of display device of cold cathode field electron emission |
| US20040048200A1 (en)* | 2002-09-11 | 2004-03-11 | Renesas Technology Corp. | Method for forming fine pattern on substrate by using resist pattern, and resist surface treatment agent |
| JP2006024730A (en)* | 2004-07-08 | 2006-01-26 | Sony Corp | Manufacturing method of semiconductor device |
| JP2006210394A (en)* | 2005-01-25 | 2006-08-10 | Canon Inc | Method for forming irregularities on the surface of a silicon substrate |
| WO2008056614A1 (en)* | 2006-11-06 | 2008-05-15 | Tokyo Electron Limited | Reflow method, pattern-forming method, and method for manufacturing tft |
| US20080258183A1 (en)* | 2007-04-23 | 2008-10-23 | Infineon Technologies Ag | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching |
| CN102017165A (en)* | 2008-02-15 | 2011-04-13 | 罗伯特.博世有限公司 | Method for the production of monocrystalline n-silicon solar cells, and solar cell produced according to such a method |
| JP2011238846A (en)* | 2010-05-12 | 2011-11-24 | Mitsubishi Electric Corp | Solar cell manufacturing method |
| CN103460398A (en)* | 2011-03-30 | 2013-12-18 | 韩华石油化学株式会社 | Solar cell and method for manufacturing the same |
| CN104011881A (en)* | 2011-12-21 | 2014-08-27 | 太阳能公司 | Hybrid Polysilicon Heterojunction Back Contact Cell |
| US20230369530A1 (en)* | 2020-10-09 | 2023-11-16 | International Solar Energy Research Center Konstanz E.V. | Method for local modification of etching resistance in a silicon layer, use of this method in the productions of passivating contact solar cells and thus-created solar cell |
| CN117613114A (en)* | 2023-11-30 | 2024-02-27 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of passivated contact solar cell and passivated contact solar cell |
| CN117374169A (en)* | 2023-12-07 | 2024-01-09 | 浙江晶科能源有限公司 | Preparation method of back contact solar cell and back contact solar cell |
| Title |
|---|
| MIN SU KIM ET AL: "Review: Surface Texturing Methods for Solar Cell Efficiency Enhancement", 《INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING》, vol. 21, no. 2005, 5 March 2020 (2020-03-05), pages 1389 - 1398, XP037165139, DOI: 10.1007/s12541-020-00337-5* |
| 曾德栋;: "太阳电池湿法刻蚀工艺的技术探讨", 化工管理, no. 03, 21 January 2018 (2018-01-21)* |
| 李涛;周春兰;宋洋;张磊;惠俊;杨海峰;郜志华;段野;李友忠;励旭东;许颖;赵雷;刘振刚;王文静;: "SiO_2/SiNx:H选择性刻蚀改善光诱导化学镀/电镀多晶硅太阳能电池过镀现象", 化学学报, no. 07, 14 April 2011 (2011-04-14)* |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119789584A (en)* | 2025-03-10 | 2025-04-08 | 晶科能源(海宁)有限公司 | Photovoltaic cell and method for manufacturing same |
| CN119789584B (en)* | 2025-03-10 | 2025-07-22 | 晶科能源(海宁)有限公司 | Photovoltaic cell and method for manufacturing the same |
| Publication number | Publication date |
|---|---|
| CN117810310B (en) | 2024-06-07 |
| Publication | Publication Date | Title |
|---|---|---|
| JP7168809B1 (en) | SOLAR CELL AND MANUFACTURING METHOD THEREOF, PHOTOVOLTAIC MODULE | |
| JP7564974B2 (en) | Photovoltaic cells and photovoltaic modules | |
| CN113594304B (en) | Preparation method of solar cell, solar cell and photovoltaic module | |
| CN106159008B (en) | Solar cell and its manufacture method | |
| JP2022501837A (en) | Crystalline silicon solar cell and its manufacturing method | |
| CN117374169B (en) | Preparation method of back contact solar cell and back contact solar cell | |
| TW201924073A (en) | Interdigitated back contact solar cell with p-type conductivity | |
| CN104810416A (en) | Solar cell and manufacturing method thereof | |
| CN104167454A (en) | Solar cell and manufacturing method thereof | |
| CN116314372A (en) | Solar cell and its preparation method, photovoltaic module | |
| CN115241299B (en) | Solar cell and photovoltaic module | |
| EP4572568A1 (en) | Solar cell, method for manufacturing the same, and photovoltaic module | |
| NL2034541B1 (en) | Solar cell, method for preparing same, and photovoltaic module | |
| CN116914019A (en) | Solar cell preparation method, solar cell and photovoltaic module | |
| CN105122461A (en) | Method for producing solar cell | |
| CN118053922A (en) | Solar cell, preparation method thereof and photovoltaic module | |
| CN117810310B (en) | Solar cell preparation method, solar cell and photovoltaic module | |
| KR101396027B1 (en) | Ion implantation and annealing for high efficiency back-contact back-junction solar cells | |
| KR102060710B1 (en) | Solar cell and method for manufacturing the same | |
| JP2001257371A (en) | Solar cell manufacturing method, solar cell, and concentrating solar cell module | |
| CN116072739B (en) | Solar cell, preparation method of solar cell and photovoltaic module | |
| CN111987225B (en) | IBC solar cell structure and preparation process thereof | |
| US20250098365A1 (en) | Solar cell, method for preparing the same, and photovoltaic module | |
| CN118053921A (en) | Solar cell, preparation method thereof and photovoltaic module | |
| CN118053931A (en) | Solar cell, manufacturing method thereof and photovoltaic module |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |