技术领域Technical field
本发明涉及镀膜技术领域，尤其涉及一种低阻高透ITO膜。The invention relates to the field of coating technology, and in particular to a low-resistance and high-permeability ITO film.
背景技术Background technique
氧化锡钢(Indium Tin Oxide，简称ITO)薄膜，为n型多晶态薄膜材料，透光率高、电阻率低，是目前在平板显示、触控等方面应用最广的透明导电材料。无论是LCD、电阻式触摸屏还是电容式触摸屏，目前都大量采用ITO玻璃作为其透明导电基板，ITO玻璃包括玻璃基板及层叠于玻璃基板上的ITO膜，目前ITO膜最常用的生产工艺为磁控溅射。Indium Tin Oxide (ITO) film is an n-type polycrystalline film material with high light transmittance and low resistivity. It is currently the most widely used transparent conductive material in flat panel displays, touch controls, etc. Whether it is LCD, resistive touch screen or capacitive touch screen, ITO glass is currently widely used as its transparent conductive substrate. ITO glass includes glass substrate and ITO film laminated on the glass substrate. At present, the most commonly used production process of ITO film is magnetron. Sputter.
作为显示屏的主要材料，ITO膜的低电阻率和高透光率性能一直是行业技术发展的追求，但是现有ITO膜工艺对于膜的硬度、耐磨性能也有很高的追求，如公开号为CN104611676A的中国专利文献，就公开了一种磁控溅射镀膜设备及ITO玻璃的制备方法，就公开了一种硬度较高的ITO膜制备设备和工艺，通过该设备和工艺制备得到的ITO膜具有较高的硬度和耐磨性能，但其透光率和电阻率不能完全满足市场需求。As the main material of the display screen, the low resistivity and high transmittance properties of the ITO film have always been the pursuit of industry technology development. However, the existing ITO film process also has high pursuit of the hardness and wear resistance of the film, such as the public number The Chinese patent document CN104611676A discloses a magnetron sputtering coating equipment and a method for preparing ITO glass. It also discloses a high-hardness ITO film preparation equipment and process. The ITO prepared by this equipment and process The film has high hardness and wear resistance, but its transmittance and resistivity cannot fully meet market demand.
发明内容Contents of the invention
本发明要解决的技术问题是克服现有技术的不足，提供一种电阻率低、透光率高的低阻高透ITO膜。The technical problem to be solved by the present invention is to overcome the shortcomings of the existing technology and provide a low-resistance and high-transmission ITO film with low resistivity and high light transmittance.
为解决上述技术问题，本发明采用以下技术方案：In order to solve the above technical problems, the present invention adopts the following technical solutions:
一种低阻高透ITO膜，包括SiO2基层，所述SiO2基层上附着低阻高透ITO层，所述低阻高透ITO层包括多层交替设置的ITO层和疏松SiO2层，所述低阻高透ITO层的底层为ITO层且与SiO2基层附着连接，所述低阻高透ITO层的表层为疏松SiO2层。A low-resistance and high-permeability ITO film, including a SiO2 base layer, a low-resistance and high-permeability ITO layer attached to the SiO2 base layer, and the low-resistance and high-permeability ITO layer includes multiple alternately arranged ITO layers and loose SiO2 layers, The bottom layer of the low-resistance and high-transmission ITO layer is an ITO layer and is adherently connected to the SiO2 base layer, and the surface layer of the low-resistance and high-transmission ITO layer is a loose SiO2 layer.
作为上述技术方案的进一步改进：As a further improvement of the above technical solution:
所述低阻高透ITO层中的ITO层和疏松SiO2层均为两层或两层以上。The ITO layer and the loose SiO2 layer in the low-resistance and high-transmission ITO layer are two or more layers.
所述疏松SiO2层为由SiO2所构成的多孔结构，其折射率为：1.3～1.52。The looseSiO2 layer is a porous structure composed ofSiO2 , and its refractive index is: 1.3~1.52.
所述ITO层的厚度为：1nm～300nm。The thickness of the ITO layer is: 1nm~300nm.
所述疏松SiO2层的厚度为：1nm～300nm。The thickness of the loose SiO2 layer is: 1nm~300nm.
与现有技术相比，本发明的优点在于：Compared with the prior art, the advantages of the present invention are:
本发明的低阻高透ITO膜，设置了由多层交替设置的ITO层和疏松SiO2层所构成的低阻高透ITO层，疏松的SiO2其透过率高，更有利于ITO层的电子跃迁，从而在提高ITO膜透光率的同时，降低其电阻率，整体提高ITO膜的低阻高透性能；而且多层的疏松SiO2层以及表层仍为疏松SiO2层，使得低阻高透ITO膜同时也兼具较高的硬度和耐磨性能。The low-resistance and high-transmission ITO film of the present invention is provided with a low-resistance and high-transmission ITO layer composed of multiple alternately arranged ITO layers and loose SiO2 layers. The loose SiO2 has a high transmittance, which is more conducive to the ITO layer Electronic transition, thereby increasing the light transmittance of the ITO film while reducing its resistivity, and overall improving the low resistance and high transmittance performance of the ITO film; and the multi-layer loose SiO2 layer and the surface layer are still loose SiO2 layers, making the low The highly transparent ITO film also has high hardness and wear resistance.
附图说明Description of drawings
图1是本发明低阻高透ITO膜实施例1的结构示意图。Figure 1 is a schematic structural diagram of Example 1 of the low-resistance and high-permeability ITO film of the present invention.
图2是本发明低阻高透ITO膜实施例2的结构示意图。Figure 2 is a schematic structural diagram of Example 2 of the low-resistance and high-permeability ITO film of the present invention.
图中各标号表示：Each symbol in the figure represents:
100、SiO2基层；200、低阻高透ITO层；201、ITO层；202、疏松SiO2层。100. SiO2 base layer; 200. Low resistance and high transmittance ITO layer; 201. ITO layer; 202. Loose SiO2 layer.
具体实施方式Detailed ways
以下将结合说明书附图和具体实施例对本发明做进一步详细说明。The present invention will be further described in detail below with reference to the accompanying drawings and specific examples.
低阻高透ITO膜实施例1：Low resistance and high permeability ITO membrane Example 1:
如图1所示，本实施例的低阻高透ITO膜，包括SiO2基层100，SiO2基层100上附着低阻高透ITO层200，低阻高透ITO层200包括多层交替设置的ITO层201和疏松SiO2层202，低阻高透ITO层200的底层为ITO层201且与SiO2基层100附着连接，低阻高透ITO层200的表层为疏松SiO2层202，疏松的SiO2其透过率高，更有利于ITO层的电子跃迁，从而在提高ITO膜透光率的同时，降低其电阻率，整体提高ITO膜的低阻高透性能；而且多层的疏松SiO2层以及表层仍为疏松SiO2层，使得本发明的低阻高透ITO膜同时也兼具较高的硬度和耐磨性能。As shown in Figure 1, the low-resistance and high-transmission ITO film of this embodiment includes a SiO2 base layer 100. A low-resistance and high-transmission ITO layer 200 is attached to the SiO2 base layer 100. The low-resistance and high-transmission ITO layer 200 includes multiple layers alternately arranged. ITO layer 201 and loose SiO2 layer 202. The bottom layer of the low-resistance and high-transmission ITO layer 200 is the ITO layer 201 and is adhered to the SiO2 base layer 100. The surface layer of the low-resistance and high-transmission ITO layer 200 is the loose SiO2 layer 202. The loose SiO2 has a high transmittance, which is more conducive to the electronic transition of the ITO layer, thereby increasing the transmittance of the ITO film while reducing its resistivity, and overall improving the low resistance and high transmittance performance of the ITO film; and the multi-layer loose SiOThe 2 layers and the surface layer are still loose SiO2 layers, so that the low resistance and high permeability ITO film of the present invention also has high hardness and wear resistance.
本实施例中，低阻高透ITO层200中的ITO层201和疏松SiO2层202均为两层。疏松SiO2层202为由SiO2所构成的多孔结构，其折射率一般为：1.3～1.52，ITO层201的厚度一般为：1nm～300nm，疏松SiO2层202的厚度一般为：1nm～300nm。In this embodiment, the ITO layer 201 and the loose SiO2 layer 202 in the low-resistance and high-transmission ITO layer 200 are both two layers. The loose SiO2 layer 202 is a porous structure composed of SiO2 , and its refractive index is generally: 1.3~1.52. The thickness of the ITO layer 201 is generally: 1nm~300nm. The thickness of the loose SiO2 layer 202 is generally: 1nm~300nm. .
本实施例中，疏松SiO2层202的折射率为1.35，ITO层201的厚度为：50nm，疏松SiO2层202的厚度为：50nm。In this embodiment, the refractive index of the loose SiO2 layer 202 is 1.35, the thickness of the ITO layer 201 is 50 nm, and the thickness of the loose SiO2 layer 202 is 50 nm.
低阻高透ITO膜实施例2：Example 2 of low resistance and high permeability ITO film:
如图2所示，本实施例的低阻高透ITO膜与实施例1基本相同，区别仅在于：低阻高透ITO层200中的ITO层201和疏松SiO2层202均为三层。As shown in Figure 2, the low-resistance and high-transmission ITO film of this embodiment is basically the same as that of Embodiment 1. The only difference is that the ITO layer 201 and the loose SiO2 layer 202 in the low-resistance and high-transmission ITO layer 200 are three layers.
本实施例中，疏松SiO2层202的折射率为1.45，ITO层201的厚度为：80nm，疏松SiO2层202的厚度为：60nm。In this embodiment, the refractive index of the loose SiO2 layer 202 is 1.45, the thickness of the ITO layer 201 is 80 nm, and the thickness of the loose SiO2 layer 202 is 60 nm.
虽然本发明已以较佳实施例揭示如上，然而并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围的情况下，都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均应落在本发明技术方案保护的范围内。Although the present invention has been disclosed above in terms of preferred embodiments, this is not intended to limit the present invention. Any person familiar with the art can, without departing from the scope of the technical solution of the present invention, use the technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into equivalent implementations with equivalent changes. example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311787769.8ACN117734249A (en) | 2023-12-22 | 2023-12-22 | ITO film with low resistance and high transmittance |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311787769.8ACN117734249A (en) | 2023-12-22 | 2023-12-22 | ITO film with low resistance and high transmittance |
| Publication Number | Publication Date |
|---|---|
| CN117734249Atrue CN117734249A (en) | 2024-03-22 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311787769.8APendingCN117734249A (en) | 2023-12-22 | 2023-12-22 | ITO film with low resistance and high transmittance |
| Country | Link |
|---|---|
| CN (1) | CN117734249A (en) |
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