技术领域Technical field
本发明涉及金刚石抛光技术领域，特别涉及一种基于等离子体刻蚀和改性作用的金刚石抛光方法。The invention relates to the technical field of diamond polishing, and in particular to a diamond polishing method based on plasma etching and modification.
背景技术Background technique
单晶金刚石特殊的晶体结构和强碳-碳键作用使其具备有极端的化学惰性和优异的物理特性，是现代工业中的关键基础材料。而微波等离子体化学气相沉积技术的快速发展也使大尺寸高品质人造金刚石的批量生产得以实现，突破了传统天然金刚石在价格、数量以及尺寸上的限制，使金刚石在光学、热学及半导体等高新技术领域的广泛应用成为可能。此外，借助超高的硬度、化学惰性和生物相容性，单晶金刚石也常应用于超精密车床的单点金刚石刀具以及生物植入性器件中，具备有极高的应用价值。The special crystal structure and strong carbon-carbon bonding of single crystal diamond make it extremely chemically inert and have excellent physical properties. It is a key basic material in modern industry. The rapid development of microwave plasma chemical vapor deposition technology has also enabled the mass production of large-sized and high-quality artificial diamonds, breaking through the price, quantity and size limitations of traditional natural diamonds, and enabling diamonds to be used in high-tech applications such as optics, thermal and semiconductors. A wide range of applications in technological fields are possible. In addition, with its ultra-high hardness, chemical inertness and biocompatibility, single crystal diamond is often used in single-point diamond tools for ultra-precision lathes and biological implantable devices, and has extremely high application value.
低损伤、超光滑与高精度特性的金刚石表面是实现金刚石各项优良性能的前提，但作为一种典型的难加工材料，金刚石极高的硬度和极强的化学稳定性严重限制了其平坦化加工，成为制约晶圆级单晶金刚石产业化应用的关键问题之一。The low-damage, ultra-smooth and high-precision diamond surface is the prerequisite for achieving various excellent properties of diamond. However, as a typical difficult-to-machine material, diamond’s extremely high hardness and strong chemical stability severely limit its planarization. Processing has become one of the key issues restricting the industrial application of wafer-level single crystal diamond.
现有的金刚石的抛光方法中大多采用的等离子体源为电容耦合等离子体，使得难以产生更高浓度的羟基活性粒子，导致抛光效率低下；并且电容耦合等离子体的激发方式需利用真空腔体约束反应气体，导致加工设备复杂且成本高。Most of the plasma sources used in existing diamond polishing methods are capacitively coupled plasmas, which makes it difficult to generate higher concentrations of hydroxyl active particles, resulting in low polishing efficiency; and the excitation method of capacitively coupled plasmas requires the use of vacuum cavity constraints. Reactive gases, resulting in complex and costly processing equipment.
发明内容Contents of the invention
有鉴于此，本发明提出了一种基于等离子体刻蚀和改性作用的金刚石抛光方法，具体方案如下：In view of this, the present invention proposes a diamond polishing method based on plasma etching and modification. The specific scheme is as follows:
一种基于等离子体刻蚀和改性作用的金刚石抛光方法，包括：A diamond polishing method based on plasma etching and modification, including:
通过夹具将待抛光的金刚石置于刚性抛光盘上方；所述刚性抛光盘上设置有多个贯通上下的通孔；The diamond to be polished is placed above the rigid polishing disk through a clamp; the rigid polishing disk is provided with a plurality of through holes that pass up and down;
通过所述夹具控制所述金刚石在第一方向旋转，控制所述刚性抛光盘在第二方向旋转；所述第一方向与所述第二方向相反；The diamond is controlled to rotate in the first direction through the clamp, and the rigid polishing disc is controlled to rotate in the second direction; the first direction is opposite to the second direction;
在所述刚性抛光盘上方喷出包含氧自由基与羟基自由基的大气电感耦合等离子体，以使得所述大气电感耦合等离子体穿过所述通孔对所述金刚石进行加热；Spray atmospheric inductively coupled plasma containing oxygen radicals and hydroxyl radicals above the rigid polishing disk, so that the atmospheric inductively coupled plasma passes through the through hole to heat the diamond;
当加热到瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时，通过所述大气电感耦合等离子体中的氧自由基对所述金刚石进行原子选择性刻蚀，同时通过所述大气电感耦合等离子体中羟基自由基对所述金刚石进行改性作用，完成对所述金刚石的抛光。When the instantaneous temperature exceeds the critical transition temperature corresponding to the differential etching of surface atoms, the diamond is atomically selectively etched through the oxygen radicals in the atmospheric inductively coupled plasma, and simultaneously through the atmospheric inductance The hydroxyl radicals in the coupled plasma modify the diamond to complete the polishing of the diamond.
在一个具体实施例中，还包括：通过所述夹具控制所述金刚石沿所述刚性抛光盘的径向以预设速度进行往复运动。In a specific embodiment, the method further includes: controlling the diamond to reciprocate at a preset speed along the radial direction of the rigid polishing disc through the clamp.
在一个具体实施例中，所述夹具包括旋转控制部和往复控制部，所述旋转控制部控制所述金刚石在所述第一方向旋转，所述往复控制部控制所述金刚石沿所述刚性抛光盘的径向以所述预设速度进行所述往复运动。In a specific embodiment, the clamp includes a rotation control part and a reciprocation control part, the rotation control part controls the rotation of the diamond in the first direction, and the reciprocation control part controls the diamond to move along the rigid polishing direction. The radial direction of the optical disc performs the reciprocating motion at the preset speed.
在一个具体实施例中，所述刚性抛光盘上方均匀设置有多个所述通孔；距离所述刚性抛光盘中心距离相同的所述通孔之间通过流道连通；所述刚性抛光盘上位于同一径向方向的多个所述通孔之间通过径向凹槽连通。In a specific embodiment, a plurality of the through holes are evenly arranged above the rigid polishing disc; the through holes at the same distance from the center of the rigid polishing disc are connected through flow channels; A plurality of the through holes located in the same radial direction are connected through radial grooves.
在一个具体实施例中，所述大气电感耦合等离子体通过炬体喷出；In a specific embodiment, the atmospheric inductively coupled plasma is ejected through a torch;
所述炬体包括内炬管和外炬管；The torch body includes an inner torch tube and an outer torch tube;
所述炬体通过所述外炬管、和/或所述内炬管喷出所述大气电感耦合等离子体；The torch ejects the atmospheric inductively coupled plasma through the outer torch and/or the inner torch;
在喷出所述大气电感耦合等离子体时，通过在所述内炬管通入混合气作为激发气以产生活性自由基，并在所述外炬管通入氩气作为冷却气。When the atmospheric inductively coupled plasma is ejected, active free radicals are generated by passing a mixed gas through the inner torch as an excitation gas, and argon gas as a cooling gas through the outer torch.
在一个具体实施例中，所述大气电感耦合等离子体是通过反应液蒸发/挥发气、氧气和氩气的混合气体得到的。In a specific embodiment, the atmospheric inductively coupled plasma is obtained by evaporating the reaction liquid/gas mixture of volatile gas, oxygen and argon.
在一个具体实施例中，通过流量计控制用于生成所述大气电感耦合等离子体的各所述气体的流量；不同的所述气体对应有不同的所述流量计；In a specific embodiment, the flow rate of each gas used to generate the atmospheric inductively coupled plasma is controlled by a flow meter; different gases correspond to different flow meters;
通过火花发生器及射频线圈控制所述混合气体产生所述大气电感耦合等离子体。The atmospheric inductively coupled plasma is generated by controlling the mixed gas through a spark generator and a radio frequency coil.
在一个具体实施例中，还包括：In a specific embodiment, it also includes:
通过控制所述氧气的流速来控制所述原子选择性刻蚀的反应速率，所述氧气的流速越大，所述原子选择性刻蚀的反应速率越快。The reaction rate of the atom-selective etching is controlled by controlling the flow rate of the oxygen. The greater the flow rate of the oxygen, the faster the reaction rate of the atom-selective etching.
在一个具体实施例中，所述大气电感耦合等离子体贯穿所述通孔辐照于所述金刚石样品的表面的时间范围在8min-12min。In a specific embodiment, the time range for the atmospheric inductively coupled plasma to irradiate the surface of the diamond sample through the through hole ranges from 8 minutes to 12 minutes.
在一个具体实施例中，所述临界转变温度的范围在1250℃-1300℃。In a specific embodiment, the critical transition temperature ranges from 1250°C to 1300°C.
有益效果：Beneficial effects:
本发明将基于等离子体刻蚀和改性作用的金刚石抛光方法中的等离子体源选择为包含高浓度高活性的氧自由基和羟基自由基的大气电感耦合等离子体，通过结合原子选择性刻蚀去除和羟基改性抛光去除实现对金刚石表面的平坦化处理，在提高对金刚石的抛光效率的同时简化了抛光装置，降低了抛光成本，提高了生产效率。The present invention selects the plasma source in the diamond polishing method based on plasma etching and modification as atmospheric inductively coupled plasma containing high concentration and high activity of oxygen free radicals and hydroxyl free radicals, and selectively etches by combining atoms. Removal and hydroxyl modified polishing removal achieve planarization of the diamond surface, which improves diamond polishing efficiency while simplifying the polishing device, reducing polishing costs, and improving production efficiency.
附图说明Description of drawings
图1是本发明实施例的基于等离子体刻蚀和改性作用的金刚石抛光方法流程图；Figure 1 is a flow chart of a diamond polishing method based on plasma etching and modification according to an embodiment of the present invention;
图2是本发明实施例的基于等离子体刻蚀和改性作用的金刚石抛光方法过程示意图；Figure 2 is a schematic process diagram of a diamond polishing method based on plasma etching and modification according to an embodiment of the present invention;
图3是本发明实施例的金刚石的抛光装置示意图；Figure 3 is a schematic diagram of a diamond polishing device according to an embodiment of the present invention;
图4是本发明实施例的氧气流速与瞬时温度、材料去除速率的关系示意图；Figure 4 is a schematic diagram of the relationship between oxygen flow rate, instantaneous temperature and material removal rate according to the embodiment of the present invention;
图5是本发明实施例的不同种类等离子体的刻蚀现象示意图；Figure 5 is a schematic diagram of the etching phenomena of different types of plasma according to the embodiment of the present invention;
图6是本发明实施例的不同种类等离子体所激发的特征光谱示意图；Figure 6 is a schematic diagram of characteristic spectra excited by different types of plasma according to the embodiment of the present invention;
图7是本发明实施例的金刚石表面瞬时温度与射频电源功率、表面粗糙度的关系示意图；Figure 7 is a schematic diagram of the relationship between the instantaneous temperature of the diamond surface, the radio frequency power supply power and the surface roughness according to the embodiment of the present invention;
图8是本发明实施例的含反应液等离子体所激发的特征光谱示意图；Figure 8 is a schematic diagram of the characteristic spectrum excited by the plasma containing the reaction liquid according to the embodiment of the present invention;
图9是本发明实施例的含反应液等离子体在不同射频电源功率下羟基活性粒子的强度示意图。Figure 9 is a schematic diagram of the intensity of hydroxyl active particles in plasma containing reaction solution under different radio frequency power supplies according to the embodiment of the present invention.
附图标记：1-夹具；2-金刚石；3-刚性抛光盘；4-通孔；5-大气电感耦合等离子体；6-流道；7-径向凹槽；8-炬体；81-内炬管；82-外炬管；9-流量计；10-火花发生器；11-射频线圈。Reference signs: 1-clamp; 2-diamond; 3-rigid polishing disc; 4-through hole; 5-atmospheric inductively coupled plasma; 6-flow channel; 7-radial groove; 8-torch body; 81- Inner torch; 82-outer torch; 9-flow meter; 10-spark generator; 11-RF coil.
具体实施方式Detailed ways
在下文中，将更全面地描述本发明公开的各种实施例。本发明公开可具有各种实施例，并且可在其中做出调整和改变。然而，应理解：不存在将本发明公开的各种实施例限于在此公开的特定实施例的意图，而是应将本发明公开理解为涵盖落入本发明公开的各种实施例的精神和范围内的所有调整、等同物和/或可选方案。Various embodiments of the present disclosure will be described more fully below. The present disclosure may have various embodiments, and adjustments and changes may be made therein. It should be understood, however, that there is no intention to limit the various embodiments of the present disclosure to the particular embodiments disclosed herein, but rather that the present disclosure is to be construed to cover the spirit and scope of the various embodiments disclosed herein. All adjustments, equivalents and/or alternatives within the scope.
在本发明公开的各种实施例中使用的术语仅用于描述特定实施例的目的并且并非意在限制本发明公开的各种实施例。如在此所使用，单数形式意在也包括复数形式，除非上下文清楚地另有指示。除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本发明公开的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本发明公开的各种实施例中被清楚地限定。The terminology used in the various embodiments of the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the present disclosure. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments disclosed herein belong. Said terms (such as terms defined in commonly used dictionaries) will be interpreted to have the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized meaning or an overly formal meaning, Unless otherwise expressly defined in the various embodiments disclosed herein.
实施例1Example 1
本发明将基于等离子体刻蚀和改性作用的金刚石抛光方法中的等离子体源选择为包含高浓度高活性的氧自由基和羟基自由基的大气电感耦合等离子体，通过结合原子选择性刻蚀去除和羟基改性抛光去除实现对金刚石表面的平坦化处理，在提高对金刚石的抛光效率的同时简化了抛光装置，降低了抛光成本，提高了生产效率。具体流程如说明书附图1所示。具体方案如下：The present invention selects the plasma source in the diamond polishing method based on plasma etching and modification as atmospheric inductively coupled plasma containing high concentration and high activity of oxygen free radicals and hydroxyl free radicals, and selectively etches by combining atoms. Removal and hydroxyl modified polishing removal achieve planarization of the diamond surface, which improves diamond polishing efficiency while simplifying the polishing device, reducing polishing costs, and improving production efficiency. The specific process is shown in Figure 1 of the manual. The specific plans are as follows:
本实施例所提及的方法一种基于等离子体刻蚀和改性作用的金刚石的抛光方法，如附图1-附图3所示，包括：The method mentioned in this embodiment is a diamond polishing method based on plasma etching and modification, as shown in Figures 1 to 3, including:
101.通过夹具1将待抛光的金刚石2置于刚性抛光盘3上方；刚性抛光盘3上设置有多个贯通上下的通孔4；101. Place the diamond 2 to be polished on the rigid polishing disc 3 through the fixture 1; the rigid polishing disc 3 is provided with a plurality of through holes 4 that pass up and down;
102.通过夹具1控制金刚石2在第一方向旋转，控制刚性抛光盘3在第二方向旋转；第一方向与第二方向相反；102. Control the diamond 2 to rotate in the first direction through the fixture 1, and control the rigid polishing disc 3 to rotate in the second direction; the first direction is opposite to the second direction;
103.在刚性抛光盘3上方喷出包含氧自由基与羟基自由基的大气电感耦合等离子体5，以使得大气电感耦合等离子体5穿过通孔4对金刚石2进行加热；103. Spray atmospheric inductively coupled plasma 5 containing oxygen radicals and hydroxyl radicals above the rigid polishing disk 3, so that the atmospheric inductively coupled plasma 5 passes through the through hole 4 to heat the diamond 2;
104.当加热到瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时，通过大气电感耦合等离子体5中的氧自由基对金刚石2进行原子选择性刻蚀，同时通过大气电感耦合等离子体5中羟基自由基对金刚石2进行改性作用，完成对金刚石2的抛光。104. When the instantaneous temperature is heated to exceed the critical transition temperature corresponding to the differential etching of surface atoms, the diamond 2 is atomically selectively etched through the oxygen radicals in the atmospheric inductively coupled plasma 5, and at the same time through the atmospheric inductively coupled plasma The hydroxyl radicals in the body 5 modify the diamond 2 to complete the polishing of the diamond 2.
本实施例的金刚石抛光方法，适用于多种领域，包括但不限于玻璃制品、半导体制造或高精度机械加工领域。例如在玻璃工厂、半导体生产线或高精度机床中，可将本实施例的金刚石抛光方法应用到制造过程中，以便提供更高质量且更精准的制品。The diamond polishing method of this embodiment is applicable to various fields, including but not limited to the fields of glass products, semiconductor manufacturing or high-precision machining. For example, in glass factories, semiconductor production lines or high-precision machine tools, the diamond polishing method of this embodiment can be applied to the manufacturing process to provide higher quality and more precise products.
101.通过夹具1将待抛光的金刚石2置于刚性抛光盘3上方；刚性抛光盘3上设置有多个贯通上下的通孔4。101. Place the diamond 2 to be polished on the rigid polishing disc 3 through the clamp 1; the rigid polishing disc 3 is provided with a plurality of through holes 4 that pass up and down.
本实施例所提及的金刚石抛光方法是一种高效而精确的加工技术，可以广泛应用于金刚石制品的制造过程中。在这种金刚石抛光方法中，夹具1的使用起到了关键作用，它能够稳定地固定待抛光的金刚石2，并确保其正确的位置。通过将金刚石2置于刚性抛光盘3上方，可以使得后续的抛光过程更加便捷和精确。刚性抛光盘3上设置的贯通上下的通孔4是为了引入大气电感耦合等离子体5。这种等离子体5中含有氧自由基和羟基自由基，它们通过通孔4贯穿刚性抛光盘3，对金刚石2表面进行加热，以实现对金刚石2的原子选择性刻蚀和改性作用。The diamond polishing method mentioned in this embodiment is an efficient and precise processing technology and can be widely used in the manufacturing process of diamond products. In this diamond polishing method, the use of the clamp 1 plays a key role. It can stably fix the diamond 2 to be polished and ensure its correct position. By placing the diamond 2 above the rigid polishing disc 3, the subsequent polishing process can be made more convenient and precise. The upper and lower through holes 4 provided on the rigid polishing disc 3 are for introducing the atmospheric inductively coupled plasma 5 . This plasma 5 contains oxygen radicals and hydroxyl radicals, which penetrate the rigid polishing disc 3 through the through holes 4 and heat the surface of the diamond 2 to achieve atomic selective etching and modification of the diamond 2 .
102.通过夹具1控制金刚石2在第一方向旋转，控制刚性抛光盘3在第二方向旋转；第一方向与第二方向相反。102. Use the fixture 1 to control the diamond 2 to rotate in the first direction, and control the rigid polishing disc 3 to rotate in the second direction; the first direction is opposite to the second direction.
通过夹具1的控制，金刚石2可以在第一方向进行旋转。夹具1稳定地固定金刚石2，并确保它在旋转过程中保持正确的位置和角度。这种旋转的方式使得金刚石2表面的每个区域都能均匀地接触到抛光盘3，从而实现整体的均匀抛光效果。Through the control of the clamp 1, the diamond 2 can rotate in the first direction. Clamp 1 holds diamond 2 stably and ensures that it maintains the correct position and angle during rotation. This rotation method enables each area on the surface of the diamond 2 to evenly contact the polishing disc 3, thereby achieving an overall uniform polishing effect.
同时，在抛光过程中，通过控制刚性抛光盘3在第二方向进行旋转。与金刚石2的旋转方向相反，这种相反方向的旋转方式有助于产生机械剪切作用力，以实现对金刚石2表面的均匀抛光。在本实施例中，夹具1控制金刚石2进行顺时针旋转，刚性抛光盘3逆时针旋转。这种相反的旋转方向使得金刚石2表面与刚性抛光盘3之间产生横向剪切力。这种横向剪切力可以去除表面的凹凸不平和瑕疵，并提高表面的平整度和光洁度。At the same time, during the polishing process, the rigid polishing disc 3 is controlled to rotate in the second direction. Opposite to the rotation direction of diamond 2, this rotation in the opposite direction helps to generate mechanical shearing force to achieve uniform polishing of the surface of diamond 2. In this embodiment, the fixture 1 controls the diamond 2 to rotate clockwise and the rigid polishing disc 3 to rotate counterclockwise. This opposite rotation direction causes transverse shearing forces between the surface of the diamond 2 and the rigid polishing disc 3 . This transverse shear removes surface irregularities and imperfections and improves surface flatness and smoothness.
通过夹具1控制金刚石2和刚性抛光盘3以相反方向旋转，能够更加均匀地去除金刚石2表面的缺陷和不均匀部分，使其表面更加平整、光滑。By controlling the diamond 2 and the rigid polishing disc 3 to rotate in opposite directions through the fixture 1, defects and uneven parts on the surface of the diamond 2 can be removed more evenly, making the surface flatter and smoother.
103.在刚性抛光盘3上方喷出包含氧自由基与羟基自由基的大气电感耦合等离子体5，以使得大气电感耦合等离子体5穿过通孔4对金刚石2进行加热。103. Spray atmospheric inductively coupled plasma 5 containing oxygen radicals and hydroxyl radicals above the rigid polishing disc 3 , so that the atmospheric inductively coupled plasma 5 passes through the through hole 4 to heat the diamond 2 .
包含氧自由基与羟基自由基的大气电感耦合等离子体5贯穿刚性抛光盘3上的通孔4中，接触到金刚石2的表面，对金刚石2进行加热，以实现对金刚石2的原子选择性刻蚀和改性作用。Atmospheric inductively coupled plasma 5 containing oxygen radicals and hydroxyl radicals penetrates through the through hole 4 on the rigid polishing disk 3, contacts the surface of the diamond 2, and heats the diamond 2 to achieve atomic selective engraving of the diamond 2. corrosion and modification.
在抛光过程中，大气电感耦合等离子体5喷射出来，其中的氧自由基会根据金刚石2表面不同位置碳原子悬挂键数量不同而产生不同的刻蚀优先级，即原子选择性刻蚀。原子选择性刻蚀会消除金刚石2表面刻蚀区域碳原子差异化成键状态，去除亚表面损伤和非晶层，构建原子级光滑表面（粗糙度Sa小于0.5 nm）。During the polishing process, the atmospheric inductively coupled plasma 5 is ejected, and the oxygen radicals in it will produce different etching priorities based on the number of dangling bonds of carbon atoms at different positions on the surface of the diamond 2, that is, atom-selective etching. Atom-selective etching will eliminate the differential bonding state of carbon atoms in the etched area of the diamond 2 surface, remove subsurface damage and amorphous layers, and build an atomically smooth surface (roughness Sa less than 0.5 nm).
同时，高活性羟基自由基附着于金刚石2和刚性抛光盘3上，并与金刚石2碳原子和刚性抛光盘3特定原子成键，产生改性作用，而后可在二者界面处发生羟基脱水缩合反应CD-OH + M-OH → CD-O-M + H2O（CD指金刚石表面被羟基改性的碳原子，M指抛光盘表面被羟基改性的原子），于界面上形成新键CD-O-M，在机械剪切作用下金刚石表面C-CD断裂，从而产生金刚石2表面的杂质去除。由于金刚石2表面凸起部位更易于捕捉羟基自由基，具有更高的材料去除速率，其表面平面度最终将趋近于刚性抛光盘3，从而实现金刚石2的全局平坦化（平面度小于0.5 μm）。At the same time, highly active hydroxyl radicals are attached to the diamond 2 and the rigid polishing disk 3, and form bonds with the carbon atoms of the diamond 2 and specific atoms of the rigid polishing disk 3, producing a modification effect, and then dehydration and condensation of the hydroxyl group can occur at the interface between the two. The reaction CD-OH + M-OH → CD-O-M + H2O (CD refers to the carbon atom modified by hydroxyl on the surface of the diamond, M refers to the atom modified by hydroxyl on the surface of the polishing disk), forming a new bond CD-O-M at the interface, The C-CD on the diamond surface breaks under the action of mechanical shear, resulting in the removal of impurities on the diamond 2 surface. Since the convex parts on the surface of diamond 2 are easier to capture hydroxyl radicals and have a higher material removal rate, its surface flatness will eventually approach that of the rigid polishing disc 3, thereby achieving global planarization of diamond 2 (flatness less than 0.5 μm ).
经过以上步骤的抛光过程，金刚石2的表面得到了充分修整和改良。这种方法不仅能够去除表面缺陷和杂质，还能够提高金刚石2的整体质量和性能。因此，在金刚石制品的制造过程中，这种抛光方法具有重要的应用价值。After the polishing process of the above steps, the surface of diamond 2 has been fully modified and improved. This method not only removes surface defects and impurities, but also improves the overall quality and performance of diamond 2. Therefore, this polishing method has important application value in the manufacturing process of diamond products.
104.当加热到瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时，通过大气电感耦合等离子体5中的氧自由基对金刚石2进行原子选择性刻蚀，同时通过大气电感耦合等离子体5中羟基自由基对金刚石2进行改性作用，完成对金刚石2的抛光。104. When the instantaneous temperature is heated to exceed the critical transition temperature corresponding to the differential etching of surface atoms, the diamond 2 is atomically selectively etched through the oxygen radicals in the atmospheric inductively coupled plasma 5, and at the same time through the atmospheric inductively coupled plasma The hydroxyl radicals in the body 5 modify the diamond 2 to complete the polishing of the diamond 2.
当金刚石2被加热到超过表面原子差异化刻蚀所对应的临界转变温度时，由大气电感耦合等离子体5中释放出的氧自由基和羟基自由基开始发挥作用，完成对金刚石2的抛光。在本实施例中，临界转变温度为1270℃（需说明的是，金刚石2表面的瞬时温度是通过红外热成像仪所测得，其测量结果受测量距离、位置、成像焦距和所校订的样品辐射率等诸多因素有关，故而不同实验条件下临界转变温度会有所差异，具体需根据实验现象进行校正）。When the diamond 2 is heated to exceed the critical transition temperature corresponding to the differential etching of surface atoms, the oxygen radicals and hydroxyl radicals released from the atmospheric inductively coupled plasma 5 begin to play a role in polishing the diamond 2. In this embodiment, the critical transition temperature is 1270°C (it should be noted that the instantaneous temperature of the surface of diamond 2 is measured by an infrared thermal imager, and the measurement results are affected by the measurement distance, position, imaging focal length and calibrated sample It is related to many factors such as emissivity, so the critical transition temperature will be different under different experimental conditions, and it needs to be corrected according to the experimental phenomenon).
首先，氧自由基在金刚石2的表面产生原子选择性刻蚀作用。当金刚石2表面的瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时，氧自由基会根据金刚石表面不同位置碳原子悬挂键数量不同而产生不同的刻蚀优先级，携带有更多悬挂键的碳原子会被优先去除。First, oxygen radicals produce atom-selective etching on the surface of diamond 2. When the instantaneous temperature on the surface of diamond 2 exceeds the critical transition temperature corresponding to the differential etching of surface atoms, oxygen free radicals will generate different etching priorities based on the number of dangling bonds of carbon atoms at different positions on the diamond surface, carrying more Carbon atoms with dangling bonds are preferentially removed.
同时，羟基自由基也会在加热过程中对金刚石2表面进行改性作用。羟基自由基具有一定的化学活性，可以与金刚石2表面的原子发生反应，并形成化学键。这种化学反应改变了金刚石2的表面化学组成和结构，使其具有更好的抛光性能和表面平整度。At the same time, hydroxyl radicals will also modify the surface of diamond 2 during the heating process. Hydroxyl radicals have certain chemical activity and can react with atoms on the surface of diamond 2 and form chemical bonds. This chemical reaction changes the surface chemical composition and structure of diamond 2, giving it better polishing performance and surface smoothness.
具体的，关于本实施例所提及的原子选择性刻蚀，进行了刻蚀粒子筛选实验，如附图4-附图7所示，采用1000 W的射频电源功率，分别在纯氩等离子体（18 slm氩气冷却气，1.5 slm的氩气载流气），含氧等离子体（18 slm氩气冷却气，1.5 slm的氩气载流气，20sccm的氧气反应气），含氟等离子体（18 slm氩气冷却气，1.5 slm的氩气载流气，20 sccm的四氟化碳反应气）进行刻蚀粒子筛选实验，辐照时长10 min，过程中采集金刚石2表面稳定后的瞬时温度并检测其表面形貌和粗糙度。在刻蚀粒子筛选实验中，三种不同等离子体均可使金刚石表面稳定瞬时温度均在1350℃以上，但仅有含氧等离子体可以使金刚石表面粗糙度从原始亚微米级降低至0.502nm。含氧等离子体中特有的氧自由基是产生金刚石表面原子选择性刻蚀的主要原因，其他含不同自由基的等离子体均无法产生原子选择性刻蚀现象，无法实现金刚石的高效平滑。Specifically, regarding the atom-selective etching mentioned in this embodiment, an etching particle screening experiment was conducted, as shown in Figures 4 to 7, using a radio frequency power supply of 1000 W, respectively in pure argon plasma. (18 slm argon cooling gas, 1.5 slm argon carrier gas), oxygen-containing plasma (18 slm argon cooling gas, 1.5 slm argon carrier gas, 20 sccm oxygen reagent gas), fluorine-containing plasma (18 SLM argon cooling gas, 1.5 slm argon carrier gas, 20 sccm carbon tetrafluoride reaction gas) to conduct an etching particle screening experiment. The irradiation time is 10 minutes. During the process, the instantaneous temperature after the surface of diamond 2 is stabilized is collected and detected. its surface morphology and roughness. In the etching particle screening experiment, three different plasmas can make the diamond surface stable and the instantaneous temperature is above 1350°C, but only oxygen-containing plasma can reduce the diamond surface roughness from the original sub-micron level to 0.502nm. The unique oxygen free radicals in oxygen-containing plasma are the main cause of atomic selective etching on the diamond surface. Other plasmas containing different free radicals cannot produce atomic selective etching and cannot achieve efficient smoothing of diamond.
进一步的，本实施例采用含氧等离子体（气体流量不变）进行原子选择性刻蚀实验以探索临界转变温度，等离子体辐照时长10min，过程中采集不同射频电源功率下金刚石2表面稳定后的瞬时温度、表面形貌及粗糙度。在进行原子选择性刻蚀实验中，随射频电源功率的提升，金刚石2表面稳定瞬时温度从965℃升高到1398℃，且不同功率条件下金刚石2表面产生不同刻蚀现象，只有当射频电源功率升高到900 W，金刚石表面温度达到1270℃时，氧等离子体才可发生原子选择性刻蚀反应，高效平滑金刚石表面。当瞬时温度进一步升高，表面粗糙度依旧稳定在0.5 nm左右，仍对应于原子选择性刻蚀反应，于是定义金刚石表面原子差异化刻蚀所对应的临界转换温度为1270℃。Furthermore, this embodiment uses oxygen-containing plasma (gas flow rate remains unchanged) to conduct an atomic selective etching experiment to explore the critical transition temperature. The plasma irradiation time is 10 minutes. During the process, the instantaneous temperature, surface morphology and roughness of the diamond 2 surface after stabilization under different RF power powers are collected. In the atomic selective etching experiment, as the RF power increases, the stable instantaneous temperature of the diamond 2 surface increases from 965°C to 1398°C, and different etching phenomena occur on the surface of diamond 2 under different power conditions. Only when the RF power increases to 900 W and the diamond surface temperature reaches 1270°C, oxygen plasma can undergo atomic selective etching reaction and efficiently smooth the diamond surface. When the instantaneous temperature is further increased, the surface roughness is still stable at about 0.5 nm, which still corresponds to the atomic selective etching reaction, so the critical transition temperature corresponding to the differential etching of atoms on the diamond surface is defined as 1270°C.
进一步的，本实施例采用1000 W的射频电源功率，在含氧等离子体下进行材料去除实验以探索影响材料去除速率的因素，等离子体辐照时长10 min，过程中采集不同氧气流速下金刚石2表面稳定后的瞬时温度和材料去除速率。材料去除实验中，金刚石表面稳定瞬时温度变化小于30℃，温度变化对材料去除速率的影响可忽略不计。当氧气流速为0时，材料去除速率为0，随氧气流速增加，金刚石表面材料去除速率成线性增加，在实验范围内，材料去除速率最高可以达到56.53 μm/min。（需说明的是，金刚石材料去除速率的结果与所采用的样品尺寸关联度较大，故而不同尺寸的样品材料去除速率会有所差异，但其始终符合材料去除速率与氧气流速近似成正比的规律。）Furthermore, this embodiment uses a radio frequency power supply of 1000 W to conduct material removal experiments under oxygen-containing plasma to explore factors affecting the material removal rate. The plasma irradiation duration is 10 minutes. During the process, diamond 2 at different oxygen flow rates is collected. Instantaneous temperature and material removal rate after surface stabilization. In the material removal experiment, the stable instantaneous temperature change on the diamond surface was less than 30°C, and the impact of temperature change on the material removal rate was negligible. When the oxygen flow rate is 0, the material removal rate is 0. As the oxygen flow rate increases, the material removal rate on the diamond surface increases linearly. Within the experimental range, the material removal rate can reach a maximum of 56.53 μm/min. (It should be noted that the results of diamond material removal rate are closely related to the size of the sample used, so the material removal rate of samples of different sizes will be different, but it is always consistent with the material removal rate being approximately proportional to the oxygen flow rate. law.)
因此，通过大气电感耦合等离子体产生的高活性氧自由基可诱发金刚石2表面产生原子选择性刻蚀，实现金刚石2的高效超光滑抛光。需说明的是，金刚石2表面原子选择性刻蚀产生需同时满足高浓度氧自由基和临界转换温度两个条件。此外，上述临界转换温度会随着加工金刚石尺寸、作用时间和工况条件（样品夹具导热性、气体流量、加工环境）等因素的变化而发生偏移。在实际应用中，有必要慎重选择工艺参数以满足不同加工需求，而附图4-附图7中的实验结果及变化趋势可为工艺参数选择提供理论依据。Therefore, highly reactive oxygen radicals generated by atmospheric inductively coupled plasma can induce atomic selective etching on the surface of diamond 2, achieving efficient and ultra-smooth polishing of diamond 2. It should be noted that the selective etching of atoms on the surface of diamond 2 needs to meet two conditions: high concentration of oxygen radicals and critical transition temperature. In addition, the above critical transition temperature will shift with changes in factors such as the size of the processed diamond, action time, and working conditions (sample fixture thermal conductivity, gas flow, processing environment). In practical applications, it is necessary to carefully select process parameters to meet different processing needs, and the experimental results and changing trends in Figures 4 to 7 can provide a theoretical basis for the selection of process parameters.
同时，如附图8-附图9所示，关于本实施例所提及的改性作用，进行了探索羟基活性粒子诱发实验。采用从300-1000 W的射频电源功率，并采用含反应液（H2O2）等离子体（18slm氩气冷却气，1.5 slm的氩气载流气，20 sccm的含反应液氩气）探索羟基活性粒子诱发实验，过程中采集不同实验条件下等离子体的光学激发光谱，确定羟基活性粒子的强度。在羟基活性粒子诱发实验中，随射频电源功率升高，等离子体中羟基活性粒子强度明显增强，且随功率增加，增强幅度有所上升，在实验区间范围内，900 W射频电源功率已可获得较大强度的羟基活性粒子，当射频电源功率达到1000 W时，含反应液等离子体中羟基活性粒子强度最大。这表明，在满足原子选择性刻蚀的条件下，也同时可以产生高活性的羟基自由基用于羟基改性。At the same time, as shown in Figures 8 to 9, experiments were conducted to explore the induction of hydroxyl active particles regarding the modification effect mentioned in this embodiment. Using RF power from 300-1000 W, and using a plasma containing reactive liquid (H2O2) (18 slm argon cooling gas, 1.5 slm argon carrier gas, 20 sccm argon containing reactive liquid) to explore the induction of hydroxyl active particles During the experiment, the optical excitation spectra of plasma under different experimental conditions were collected to determine the intensity of hydroxyl active particles. In the hydroxyl active particle induction experiment, as the radio frequency power supply power increases, the intensity of the hydroxyl active particles in the plasma increases significantly, and as the power increases, the intensity of the enhancement increases. Within the experimental range, 900 W radio frequency power supply power can be obtained For larger intensity hydroxyl active particles, when the radio frequency power supply power reaches 1000 W, the intensity of hydroxyl active particles in the plasma containing the reaction solution is maximum. This shows that under the conditions of atom-selective etching, highly active hydroxyl radicals can also be generated for hydroxyl modification.
需说明的是，羟基活性粒子所测量的激发强度与检测探头相对于等离子体的方位、距离密切相关，且活性粒子的诱发可通过包括但不限于过氧化氢、水蒸气等可电离产生羟基的物质生成。It should be noted that the excitation intensity measured by the hydroxyl active particles is closely related to the orientation and distance of the detection probe relative to the plasma, and the active particles can be induced by substances that can ionize to generate hydroxyl groups, including but not limited to hydrogen peroxide, water vapor, etc. matter generation.
综上所述，通过大气电感耦合等离子体5中的氧自由基和羟基自由基对金刚石2进行原子选择性刻蚀和改性作用，可以在抛光过程中实现对金刚石2表面的微观调控。这种方法可以去除金刚石2表面的缺陷和不均匀性，同时改善其表面的质量和光洁度。最终，完成对金刚石2的抛光，使其达到所需的精确度和质量要求。In summary, through the atomic selective etching and modification of diamond 2 by oxygen radicals and hydroxyl radicals in the atmospheric inductively coupled plasma 5, microscopic control of the surface of diamond 2 can be achieved during the polishing process. This method can remove defects and unevenness on the surface of diamond 2 while improving its surface quality and smoothness. Finally, the diamond 2 is polished to the required accuracy and quality requirements.
在一个具体实施例中，还包括：通过夹具1控制待抛光金刚石2沿刚性抛光盘3的径向以预设速度进行往复运动。In a specific embodiment, the method further includes: using the clamp 1 to control the diamond 2 to be polished to reciprocate along the radial direction of the rigid polishing disc 3 at a preset speed.
在本实施例中，除了金刚石2和刚性抛光盘3以相反方向旋转之外，还包括通过夹具1控制待抛光的金刚石2沿刚性抛光盘3的径向以预设速度进行往复运动。通过控制金刚石2的运动，可以实现更加均匀和全面的抛光效果。金刚石2在往复运动中，表面与刚性抛光盘3之间充分接触，进一步促进了刻蚀和改性的效果。同时，往复运动还可以防止金刚石2在抛光过程中局部过热或过载，保证抛光的稳定性和可靠性。In this embodiment, in addition to the rotation of the diamond 2 and the rigid polishing disk 3 in opposite directions, it also includes controlling the diamond 2 to be polished to reciprocate at a preset speed in the radial direction of the rigid polishing disk 3 through the fixture 1 . By controlling the movement of diamond 2, a more uniform and comprehensive polishing effect can be achieved. During the reciprocating motion of the diamond 2, the surface is in full contact with the rigid polishing disc 3, further promoting the etching and modification effects. At the same time, the reciprocating motion can also prevent the diamond 2 from being locally overheated or overloaded during the polishing process, ensuring the stability and reliability of polishing.
因此，在本实施例中，通过夹具1控制待抛光的金刚石2沿刚性抛光盘3的径向以预设速度进行往复运动，能够进一步提高抛光的效果，使得金刚石2的表面更加平整、光滑和精确。Therefore, in this embodiment, the clamp 1 controls the diamond 2 to be polished to reciprocate along the radial direction of the rigid polishing disc 3 at a preset speed, which can further improve the polishing effect and make the surface of the diamond 2 flatter, smoother and smoother. accurate.
在一个具体实施例中，夹具1包括旋转控制部和往复控制部，旋转控制部控制金刚石2在第一方向旋转，往复控制部控制金刚石2沿刚性抛光盘3的径向以预设速度进行往复运动。In a specific embodiment, the clamp 1 includes a rotation control part and a reciprocation control part. The rotation control part controls the diamond 2 to rotate in the first direction, and the reciprocation control part controls the diamond 2 to reciprocate along the radial direction of the rigid polishing disc 3 at a preset speed. sports.
在本实施例中，夹具1由两个部分组成,旋转控制部的主要任务是控制金刚石2在第一方向上的旋转,夹具1能够根据需要调整旋转速度，以满足不同材料的抛光要求。通过控制金刚石2与刚性抛光盘3的旋转方向相反，这有助于产生机械剪切作用力，以实现对金刚石2表面的均匀抛光。往复控制部的功能是控制金刚石2沿刚性抛光盘3的径向进行往复运动，从而实现均匀且高质量的抛光效果。In this embodiment, the clamp 1 is composed of two parts. The main task of the rotation control part is to control the rotation of the diamond 2 in the first direction. The clamp 1 can adjust the rotation speed as needed to meet the polishing requirements of different materials. By controlling the rotation directions of the diamond 2 and the rigid polishing disc 3 in opposite directions, this helps to generate mechanical shearing force to achieve uniform polishing of the surface of the diamond 2 . The function of the reciprocating control part is to control the reciprocating movement of the diamond 2 along the radial direction of the rigid polishing disc 3, thereby achieving uniform and high-quality polishing effects.
在一个具体实施例中，刚性抛光盘3上方均匀设置有多个通孔4；距离刚性抛光盘3中心距离相同的通孔4之间通过流道6连通；刚性抛光盘3上位于同一径向方向的多个通孔4之间通过径向凹槽7连通。In a specific embodiment, a plurality of through holes 4 are evenly arranged above the rigid polishing disc 3; the through holes 4 at the same distance from the center of the rigid polishing disc 3 are connected through flow channels 6; the rigid polishing disc 3 is located in the same radial direction. The plurality of through holes 4 in the direction are connected through radial grooves 7 .
在本实施例中，刚性抛光盘3上方均匀设置有多个通孔4，这些通孔4是为了使包含氧自由基与羟基自由基的大气电感耦合等离子体5贯穿刚性抛光盘3上的通孔4中，接触到金刚石2的表面，对金刚石2进行加热，以实现对金刚石2的原子选择性刻蚀和改性作用。In this embodiment, a plurality of through holes 4 are evenly arranged above the rigid polishing disk 3. These through holes 4 are for allowing the atmospheric inductively coupled plasma 5 containing oxygen free radicals and hydroxyl free radicals to penetrate through the through holes 4 on the rigid polishing disk 3, contact the surface of the diamond 2, and heat the diamond 2, so as to achieve atomic selective etching and modification of the diamond 2.
同时，为了更好地控制气体的流动和分布，距离刚性抛光盘3的中心点等距排列的通孔之间通过流道6进行连通，使得气体能够均匀地在整个表面发生流动。此外，在刚性抛光盘3的表面上，同一径向方向的多个通孔4之间还设置有径向凹槽7，以进一步增强气体的流动和分布。这些径向凹槽7可以将气体从一个通孔4引导到另一个通孔4，从而实现在刚性抛光盘3表面的大范围气体流动和分布。At the same time, in order to better control the flow and distribution of gas, the through holes arranged equidistantly from the center point of the rigid polishing disk 3 are connected through flow channels 6 so that the gas can flow evenly across the entire surface. In addition, on the surface of the rigid polishing disc 3, radial grooves 7 are provided between multiple through holes 4 in the same radial direction to further enhance the flow and distribution of gas. These radial grooves 7 can guide gas from one through hole 4 to another through hole 4 , thereby achieving a wide range of gas flow and distribution on the surface of the rigid polishing disc 3 .
通过这种设置方式，刚性抛光盘3表面的多个通孔4之间可以形成均匀的气体流动和分布，从而使得抛光过程更加稳定和均匀。同时，这种设计还可以降低表面温度，减少摩擦热的产生，从而避免对金刚石2等材料的损伤。Through this arrangement, uniform gas flow and distribution can be formed between the plurality of through holes 4 on the surface of the rigid polishing disc 3, thereby making the polishing process more stable and uniform. At the same time, this design can also lower the surface temperature and reduce the generation of frictional heat, thereby avoiding damage to materials such as diamond 2.
在一个具体实施例中，大气电感耦合等离子体5通过炬体8喷出；In a specific embodiment, the atmospheric inductively coupled plasma 5 is ejected through the torch body 8;
炬体8包括内炬管81和外炬管82；The torch body 8 includes an inner torch 81 and an outer torch 82;
炬体8通过外炬管82、和/或内炬管81喷出所述大气电感耦合等离子体5；The torch body 8 ejects the atmospheric inductively coupled plasma 5 through the outer torch 82 and/or the inner torch 81;
在喷出大气电感耦合等离子体5时，通过在内炬管81通入混合气作为激发气以产生活性自由基，并在外炬管82通入氩气作为冷却气。When the atmospheric inductively coupled plasma 5 is ejected, the mixed gas is introduced into the inner torch 81 as an excitation gas to generate active radicals, and argon gas is introduced into the outer torch 82 as a cooling gas.
在本实施例中，大气电感耦合等离子体5是通过炬体8进行喷出。炬体8由内炬管81和外炬管82组成。在本实施例中，内炬管81和外炬管82同时负责喷出大气电感耦合等离子体5，并且通过在内炬管81通入混合气作为激发气以产生活性自由基，在外炬管82则用于通入氩气作为冷却气体，以确保喷出的等离子体5不过热。In this embodiment, the atmospheric inductively coupled plasma 5 is ejected through the torch body 8 . The torch body 8 is composed of an inner torch tube 81 and an outer torch tube 82 . In this embodiment, the inner torch 81 and the outer torch 82 are responsible for ejecting the atmospheric inductively coupled plasma 5 at the same time, and by passing the mixed gas into the inner torch 81 as an excitation gas to generate active radicals, the outer torch 82 Argon gas is used as a cooling gas to ensure that the ejected plasma 5 does not overheat.
具体地说，内炬管81通过控制通入的反应气的种类来调控大气电感耦合等离子体5中活性粒子的种类，以满足具体应用的要求。Specifically, the inner torch 81 regulates the types of active particles in the atmospheric inductively coupled plasma 5 by controlling the type of reactant gas introduced to meet the requirements of specific applications.
与此同时，在喷出等离子体5的过程中，通过外炬管82通入氩气作为冷却气体。氩气可以吸收等离子体释放的热量，起到降温和冷却的作用。这样可以有效地防止等离子体过热，同时保护炬体8不受过高温度的影响。通过在喷出大气电感耦合等离子体5时，在外炬管82通入氩气作为冷却气，可以确保等离子体的稳定和控制。冷却气的流动可以带走炬体8周围的热量，防止过热引起的问题，并延长炬体8的使用寿命。At the same time, during the process of ejecting the plasma 5, argon gas is introduced through the outer torch 82 as a cooling gas. Argon absorbs the heat released by the plasma and acts as a cooling and cooling agent. This can effectively prevent plasma from overheating and protect the torch body 8 from being affected by excessive temperature. When the atmospheric inductively coupled plasma 5 is ejected, argon gas is introduced into the outer torch 82 as a cooling gas, thereby ensuring the stability and control of the plasma. The flow of cooling gas can take away the heat around the torch body 8 to prevent problems caused by overheating and extend the service life of the torch body 8 .
在一个具体实施例中，大气电感耦合等离子体5是通过反应液蒸发/挥发气、氧气和氩气的混合气体得到的。In a specific embodiment, the atmospheric inductively coupled plasma 5 is obtained by evaporating the reaction liquid/a mixed gas of volatile gas, oxygen and argon.
在本实施例中，大气电感耦合等离子体5是通过反应液蒸发/挥发气、氧气和氩气的混合气体得到的。其中，反应液蒸发/挥发气和氧气作为反应气，而氩气则充当载流气。In this embodiment, the atmospheric inductively coupled plasma 5 is obtained by evaporating the reaction liquid/a mixed gas of volatile gas, oxygen and argon. Among them, the reaction liquid evaporation/volatile gas and oxygen are used as the reaction gas, while argon serves as the carrier gas.
反应液蒸发/挥发气是一种能够在等离子体激发下产生羟基的气体。通过将反应液加热并将其蒸发或挥发成气态，可以将反应液转化为气态反应物。这种气态反应物可以与其他气体（如氧气）混合，形成一个具有特定成分的混合气体。氧气则作为反应气参与到化学反应中。氧气是许多化学反应中必要的氧化剂，能够促进物质的氧化过程。它可以与反应液蒸发/挥发气中的化学物质发生反应，引发一系列氧化反应，从而促使等离子体5的形成。Reaction liquid evaporation/volatile gas is a gas that can produce hydroxyl groups under plasma excitation. The reaction liquid can be converted into gaseous reactants by heating the reaction liquid and evaporating or volatilizing it into a gaseous state. This gaseous reactant can be mixed with other gases, such as oxygen, to form a gas mixture with a specific composition. Oxygen participates in chemical reactions as a reactant gas. Oxygen is a necessary oxidant in many chemical reactions and can promote the oxidation process of substances. It can react with the chemical substances in the evaporation/volatile gas of the reaction liquid, triggering a series of oxidation reactions, thereby promoting the formation of plasma 5.
而氩气则作为载流气的角色，用于稀释反应气，调节等离子体的密度和浓度，并起到冷却作用以保护设备。氩气是一种惰性气体，不参与化学反应，但可以有效稀释其他气体成分，控制等离子体的浓度。同时，氩气还可以冷却反应区域，以防止过热和保护设备。Argon plays the role of a carrier gas, used to dilute the reaction gas, adjust the density and concentration of the plasma, and play a cooling role to protect the equipment. Argon is an inert gas that does not participate in chemical reactions, but can effectively dilute other gas components and control the concentration of plasma. At the same time, argon can also cool the reaction area to prevent overheating and protect equipment.
在一个具体实施例中，通过流量计9控制用于生成大气电感耦合等离子体5的各气体的流量；不同的气体对应有不同的流量计9；In a specific embodiment, the flow rate of each gas used to generate the atmospheric inductively coupled plasma 5 is controlled by a flow meter 9; different gases correspond to different flow meters 9;
通过火花发生器10及射频线圈11控制混合气体产生大气电感耦合等离子体5。The mixed gas is controlled by the spark generator 10 and the radio frequency coil 11 to generate atmospheric inductively coupled plasma 5 .
在本实施例中，通过流量计9控制用于生成大气电感耦合等离子体5的各气体的流量。不同的气体对应有不同的流量计9，以确保每种气体的供给量能够精确地控制。In this embodiment, the flow rate of each gas used to generate the atmospheric inductively coupled plasma 5 is controlled by the flow meter 9 . Different gases correspond to different flow meters 9 to ensure that the supply volume of each gas can be accurately controlled.
流量计9是一种用于测量气体流量的仪器，它可以通过不同的传感器或机制来监测气体的流动速度和体积。通过设置不同类型和参数的流量计9，可以实现对不同气体流量的实时监测和调节。这样就可以确保混合气体中各成分的比例和浓度能够达到预期的要求，从而生成稳定的大气电感耦合等离子体5。A flow meter 9 is an instrument used to measure gas flow, which can monitor the flow rate and volume of gas through different sensors or mechanisms. By setting flow meters 9 of different types and parameters, real-time monitoring and adjustment of different gas flows can be achieved. This ensures that the proportion and concentration of each component in the mixed gas can meet the expected requirements, thereby generating stable atmospheric inductively coupled plasma 5 .
此外，通过火花发生器10及射频线圈11控制混合气体产生大气电感耦合等离子体5。火花发生器10是用于产生电火花的装置，通过放电作用将混合气体激发为等离子体。而射频线圈11则通过提供射频电场来进一步激活和维持等离子体的稳定状态。火花发生器10和射频线圈11的配合使用，可以实现对混合气体产生等离子体的精密控制。通过调节火花发生器10的放电参数和射频线圈11的工作频率，可以调整等离子体的密度、温度和稳定性，以满足特定应用的需求。In addition, the mixed gas is controlled by the spark generator 10 and the radio frequency coil 11 to generate atmospheric inductively coupled plasma 5 . The spark generator 10 is a device for generating electric sparks, and excites the mixed gas into plasma through discharge. The radio frequency coil 11 further activates and maintains the stable state of the plasma by providing a radio frequency electric field. The cooperative use of the spark generator 10 and the radio frequency coil 11 can achieve precise control of the plasma generated by the mixed gas. By adjusting the discharge parameters of the spark generator 10 and the operating frequency of the radio frequency coil 11, the density, temperature and stability of the plasma can be adjusted to meet the needs of a specific application.
在一个具体实施例中，还包括：In a specific embodiment, it also includes:
通过控制氧气的流速来控制原子选择性刻蚀的反应速率，氧气的流速越大，原子选择性刻蚀的反应速率越快。The reaction rate of atom-selective etching is controlled by controlling the flow rate of oxygen. The greater the flow rate of oxygen, the faster the reaction rate of atom-selective etching.
在本实施例中，如附图4所示，需根据氧气的流速来控制原子选择性刻蚀的反应速率。当氧气流速为0时，材料去除速率为0，随氧气流速增加，金刚石表面材料去除速率成线性增加，在实验范围内，材料去除速率最高可以达到56.53 μm/min。（需说明的是，金刚石材料去除速率的结果与所采用的样品尺寸关联度较大，故而不同尺寸的样品材料去除速率会有所差异，但其始终符合材料去除速率与氧气流速近似成正比的规律。）In this embodiment, as shown in FIG. 4 , the reaction rate of atomic selective etching needs to be controlled according to the flow rate of oxygen. When the oxygen flow rate is 0, the material removal rate is 0. As the oxygen flow rate increases, the material removal rate on the diamond surface increases linearly. Within the experimental range, the material removal rate can reach a maximum of 56.53 μm/min. (It should be noted that the results of diamond material removal rate are closely related to the size of the sample used, so the material removal rate of samples of different sizes will be different, but it is always consistent with the material removal rate being approximately proportional to the oxygen flow rate. law.)
氧气的流速越大，大气电感耦合等离子体5中的氧活性自由基浓度越高，使得作用于金刚石2表面的氧自由基含量越高，进而加快原子选择性刻蚀的反应速率。这种方法可以提供更加灵活和可调节的参数，以适应不同应用场景对等离子体性质的要求。同时，通过调节氧气的流速，可以实现对金刚石2抛光过程的精密控制，从而优化反应效率和产品品质。The greater the flow rate of oxygen, the higher the concentration of oxygen active radicals in the atmospheric inductively coupled plasma 5, resulting in a higher content of oxygen radicals acting on the surface of the diamond 2, thereby accelerating the reaction rate of atomic selective etching. This method can provide more flexible and adjustable parameters to adapt to the requirements of plasma properties in different application scenarios. At the same time, by adjusting the flow rate of oxygen, precise control of the diamond 2 polishing process can be achieved, thereby optimizing reaction efficiency and product quality.
在一个具体实施例中，大气电感耦合等离子体5贯穿通孔4辐照于金刚石2样品的表面的时间范围在8min-12min。In a specific embodiment, the time range for the atmospheric inductively coupled plasma 5 to penetrate the through hole 4 and irradiate the surface of the diamond 2 sample ranges from 8 minutes to 12 minutes.
在本实施例中，大气电感耦合等离子体5贯穿通孔4辐照于金刚石2样品的表面的时间范围在8min-12min。这个时间范围是通过实验得出的最佳时间段。在这个时间范围内，大气电感耦合等离子体5能够充分地覆盖金刚石2样品的表面，并且产生足够的化学反应，从而实现对金刚石2的抛光处理。In this embodiment, the time range for the atmospheric inductively coupled plasma 5 to penetrate through the through hole 4 and irradiate the surface of the diamond 2 sample is between 8 minutes and 12 minutes. This time range is the optimal time period derived through experiments. Within this time range, the atmospheric inductively coupled plasma 5 can fully cover the surface of the diamond 2 sample and generate sufficient chemical reactions to achieve polishing of the diamond 2 .
需要注意的是，大气电感耦合等离子体5的照射时间不仅与样品的性质和处理目的有关，还与等离子体的功率和密度等参数密切相关。因此，在具体实施过程中，需要对等离子体的参数进行精细调节和控制，以确保所需处理时间范围内等离子体的功率和密度达到最佳状态。It should be noted that the irradiation time of atmospheric inductively coupled plasma 5 is not only related to the nature and processing purpose of the sample, but also closely related to parameters such as the power and density of the plasma. Therefore, during the specific implementation process, the parameters of the plasma need to be finely adjusted and controlled to ensure that the power and density of the plasma reach the optimal state within the required processing time range.
在一个具体实施例中，临界转变温度的范围在1250℃-1300℃。In a specific embodiment, the critical transition temperature ranges from 1250°C to 1300°C.
在本实施例中，临界转变温度为1270℃（需说明的是，金刚石2表面的瞬时温度是通过红外热成像仪所测得，其测量结果受测量距离、位置、成像焦距和所校订的样品辐射率等诸多因素有关，故而不同实验条件下临界转变温度会有所差异，具体需根据实验现象进行校正）。In this embodiment, the critical transition temperature is 1270°C (it should be noted that the instantaneous temperature of the surface of diamond 2 is measured by an infrared thermal imager, and the measurement results are affected by the measurement distance, position, imaging focal length and calibrated sample It is related to many factors such as emissivity, so the critical transition temperature will be different under different experimental conditions, and it needs to be corrected according to the experimental phenomenon).
本发明将基于等离子体刻蚀和改性作用的金刚石抛光方法中的等离子体源选择为包含高浓度高活性的氧自由基和羟基自由基的大气电感耦合等离子体，通过结合原子选择性刻蚀去除和羟基改性抛光去除实现对金刚石表面的平坦化处理，在提高对金刚石的抛光效率的同时简化了抛光装置，降低了抛光成本，提高了生产效率。The present invention selects the plasma source in the diamond polishing method based on plasma etching and modification as atmospheric inductively coupled plasma containing high concentration and high activity of oxygen free radicals and hydroxyl free radicals, and selectively etches by combining atoms. Removal and hydroxyl modified polishing removal achieve planarization of the diamond surface, which improves diamond polishing efficiency while simplifying the polishing device, reducing polishing costs, and improving production efficiency.
本领域技术人员可以理解附图只是一个优选实施场景的示意图，附图中的模块或流程并不一定是实施本发明所必须的。本领域技术人员可以理解实施场景中的装置中的模块可以按照实施场景描述进行分布于实施场景的装置中，也可以进行相应变化位于不同于本实施场景的一个或多个装置中。Those skilled in the art can understand that the accompanying drawing is only a schematic diagram of a preferred implementation scenario, and the modules or processes in the accompanying drawing are not necessarily necessary for implementing the present invention. Those skilled in the art can understand that the modules in the devices in the implementation scenario can be distributed in the devices in the implementation scenario according to the description of the implementation scenario, or can be correspondingly changed and located in one or more devices different from the implementation scenario.
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| CN202410184040.XACN117733662B (en) | 2024-02-19 | 2024-02-19 | Diamond polishing method based on plasma etching and modification effects |
| PCT/CN2024/086401WO2025175625A1 (en) | 2024-02-19 | 2024-04-07 | Diamond polishing method based on plasma etching and modification effects |
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| CN202410184040.XACN117733662B (en) | 2024-02-19 | 2024-02-19 | Diamond polishing method based on plasma etching and modification effects |
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| CN118952006A (en)* | 2024-07-16 | 2024-11-15 | 南方科技大学 | Diamond polishing method, diamond and polishing equipment thereof |
| CN119566986A (en)* | 2025-01-14 | 2025-03-07 | 浙江大学 | Preparation method of atomic-level sharp diamond cutting edge |
| CN119566986B (en)* | 2025-01-14 | 2025-09-30 | 浙江大学 | A method for preparing atomically sharp diamond cutting edges |
| Publication number | Publication date |
|---|---|
| CN117733662B (en) | 2024-04-16 |
| WO2025175625A1 (en) | 2025-08-28 |
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