Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide an intelligent power module, which improves the packaging efficiency of the intelligent power module, and the two sides of the substrate in the width direction can be expanded to the edge of the plastic package shell, thereby improving the heat dissipation efficiency of the intelligent power module
The intelligent power module comprises a substrate, a frame, a driving chip, a first conductive piece, a second conductive piece, an insulated gate bipolar transistor and a diode, wherein the frame is located on one side of the thickness direction of the substrate, the frame comprises a base island, a control pin and a power pin, the control pin and the power pin are distributed along the width direction of the substrate, the insulated gate bipolar transistor and the diode are arranged on the substrate and are spaced apart along the width direction of the substrate, the insulated gate bipolar transistor is connected with the control pin and the power pin, the diode is connected with the power pin, the driving chip is arranged on the base island, the driving chip is connected with the control pin, the first conductive piece and the second conductive piece are located between the substrate and the frame, and two ends of the first conductive piece are respectively connected with the power pin and the insulated gate bipolar transistor, and two ends of the second conductive piece are respectively connected with the power pin and the diode.
According to the intelligent power module provided by the embodiment of the invention, the first conductive piece and the second conductive piece are arranged between the substrate and the frame, the two ends of the first conductive piece are respectively connected with the power pin and the insulated gate bipolar transistor, and the two ends of the second conductive piece are respectively connected with the power pin and the diode. Therefore, compared with the traditional intelligent power module, the aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module can be improved, the two sides of the width direction of the substrate can be expanded to the edge of the plastic package shell, and the heat dissipation efficiency of the intelligent power module is improved.
According to some embodiments of the invention, the insulated gate bipolar transistor has an emitter, and two ends of the first conductive member are respectively connected to the emitter and the power pin, wherein a cross-sectional area of the first conductive member is smaller than a cross-sectional area of the emitter.
According to some embodiments of the invention, the diode has an anode, and two ends of the second conductive member are respectively connected to the anode and the power pin, wherein a cross-sectional area of the second conductive member is smaller than a cross-sectional area of the anode.
According to some embodiments of the invention, the insulated gate bipolar transistor is arranged adjacent to the control pin in the width direction of the substrate, the power pin comprises a first power pin, the end part of the first power pin extends to the control pin in the width direction of the substrate, the first conductive piece is arranged at the end part of the first power pin, the control pin comprises a high-voltage control pin and a low-voltage control pin, the first power pin comprises a high-voltage power pin and a low-voltage power pin, the high-voltage power pin is connected with the high-voltage control pin in the width direction of the substrate, and the low-voltage power pin is spaced from the low-voltage control pin in the width direction of the substrate.
According to some embodiments of the invention, the control pin comprises a first control pin, the insulated gate bipolar transistor has a gate, and the intelligent power module further comprises a third conductive member located between the substrate and the frame, two ends of the third conductive member are respectively connected with the gate and the first control pin, wherein the cross-sectional area of the third conductive member is smaller than the cross-sectional area of the gate.
According to some embodiments of the invention, the third conductive element has a cross-sectional area that is smaller than a cross-sectional area of the first conductive element.
According to some embodiments of the invention, the intelligent power module further comprises a fourth conductive member connected between the substrate and the power pin, the fourth conductive member being disposed adjacent an edge of a side of the substrate remote from the control pin.
According to some embodiments of the invention, the cross-sectional area of the fourth conductive element is less than or equal to the cross-sectional area of the first conductive element.
According to some embodiments of the invention, the first conductive member is connected to the power pin by means of ultrasonic welding, solder paste welding or sintering, and/or the third conductive member is connected to the first control pin by means of ultrasonic welding, solder paste welding or sintering, and/or the fourth conductive member is connected to the power pin by means of ultrasonic welding, solder paste welding or sintering.
According to some embodiments of the invention, each control pin comprises a first pin segment and a second pin segment connected to each other, the second pin segment being located on a side of the first pin segment remote from the substrate, the first pin segment being located within a plastic package, the second pin segment being located outside the plastic package; each power pin comprises a third pin section and a fourth pin section which are connected with each other, wherein the fourth pin section is positioned on one side of the third pin section, which is far away from the substrate, the third pin section is positioned in the plastic package shell, and the fourth pin section is positioned outside the plastic package shell;
The first pin segment is arranged on one side surface of the substrate, the third pin segment is arranged on one side surface of the substrate, and the base island is arranged on one side surface of the substrate.
According to some embodiments of the invention, one end of the substrate in the width direction extends to one end of the base island adjacent to the control pin, and the other end of the substrate in the width direction extends to one end of the third pin segment adjacent to the fourth pin segment.
According to some embodiments of the invention, the insulated gate bipolar transistors and the diodes are multiple, the insulated gate bipolar transistors are spaced apart in the length direction of the substrate, two adjacent insulated gate bipolar transistors are staggered in the width direction of the substrate, the diodes are spaced apart in the length direction of the substrate, and two adjacent diodes are staggered in the width direction of the substrate.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a framework of a smart power module according to an embodiment of the invention;
FIG. 2 is a top view of a frame of the smart power module shown in FIG. 2;
FIG. 3 is a side view of a frame of the smart power module shown in FIG. 1;
FIG. 4 is a schematic diagram of a smart power module according to an embodiment of the present invention, wherein the plastic enclosure is not shown;
FIG. 5 is a top view of the smart power module shown in FIG. 3, with the plastic enclosure not shown;
FIG. 6 is a schematic diagram of a smart power module according to an embodiment of the invention;
FIG. 7 is a schematic diagram of another angle of a smart power module according to an embodiment of the present invention;
FIG. 8 is a cross-sectional view of a smart power module according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a substrate and a power chip of a smart power module according to an embodiment of the invention.
Reference numerals:
100, an intelligent power module;
10, substrate, 101, first region, 1012, second region, 1013, fourth region, 102, first copper layer, 103, ceramic layer, 104, second copper layer, 20, frame, 201, base island, 202, control pin, 2021, 2022, 2023, first control pin, 2024, first pin section, 2025, second pin section, 203, power pin, 2031, first power pin, 2032, high voltage power pin, 2033, low voltage power pin, 2034, third pin section, 2035, fourth pin section, 30, insulated gate bipolar transistor, 301, emitter, 302, gate, 303, high voltage insulated gate bipolar transistor, 304, low voltage insulated gate bipolar transistor, 31, diode, 311, low voltage diode, 312, anode, 313, 40, driving chip, 401, high voltage driving chip, 403, second conductive element, 501, third conductive element, and fourth conductive element, and housing 60.
Detailed Description
An intelligent power module 100 according to an embodiment of the present invention is described below with reference to fig. 1-9
As shown in fig. 1 to 9, the intelligent power module 100 according to the embodiment of the present invention includes a substrate 10, a frame 20, an insulated gate bipolar transistor 30, a diode 31, a driving chip 40, and a first conductive member 501.
Specifically, the frame 20 is located on one side in the thickness direction (e.g., the left-right direction in fig. 8) of the substrate 10, the frame 20 includes a base 201, control pins 202, and power pins 203, and the control pins 202 and the power pins 203 are arranged in the width direction (e.g., the up-down direction in fig. 5) of the substrate 10. The insulated gate bipolar transistor 30 and the diode 31 are both provided on the substrate 10 and spaced apart in the width direction of the substrate 10, the insulated gate bipolar transistor 30 being connected to the control pin 202 and the power pin 203, and the diode 31 being connected to the power pin 203. The driving chip 40 is disposed on the base island 201, and the driving chip 40 is connected to the control pins 202. The first conductive member 501 and the second conductive member 502 are both located between the substrate 10 and the frame 20, both ends of the first conductive member 501 are respectively connected to the power pin 203 and the insulated gate bipolar transistor 30, and both ends of the second conductive member 502 are respectively connected to the power pin 203 and the diode 31.
For example, in the example of fig. 1-8, the substrate 10, the island 201, the insulated gate bipolar transistor 30, the diode 31, the driving chip 40, and the first conductive member 501 are all disposed within the plastic package case 60, and the insulated gate bipolar transistor 30 and the diode 31 constitute a power chip. The surface of the substrate 10 far away from the frame 20 is flush with the bottom surface of the plastic package housing 60 and is exposed outside the plastic package housing 60, and when the insulated gate bipolar transistor 30 and the diode 31 work to generate heat, the heat can be transferred to the surface and exchange heat with the outside, so as to realize heat dissipation of the intelligent power module 100. The two sides of the plastic package housing 60 in the width direction are a control side and a power side, the control pin 202 is located at the control side, and one end of the control pin 202 extends into the plastic package housing 60 for connecting with the insulated gate bipolar transistor 30 or the driving chip 40. One end of the power pin 203 extends into the plastic package housing 60 for connection with the diode 31 or the substrate 10, and the other end of the power pin 203 extends out of the plastic package housing 60 from the power side.
The base 201 is disposed adjacent to the control side of the plastic package body 60, and the driving chip 40 is disposed on a side of the base 201 away from the substrate 10. For example, the number of islands 201 is seven, and the seven islands 201 are spaced apart in the longitudinal direction (e.g., the left-right direction in fig. 5) of the substrate 10. The driving chip 40 includes one low voltage driving chip 401, three high voltage driving chips 403, and three bootstrap diodes 404, and the high voltage driving chip 403 and the bootstrap diodes 404 are connected to the control pins 202 through gold wires or copper wires. The low-voltage driving chip 401 is disposed on the outermost island 201 among the seven islands 201, the low-voltage driving chip 401 may be connected to the control pin 202 through a gold wire or a copper wire, and the three high-voltage driving chips 403 and the three bootstrap diodes 404 are respectively disposed on the remaining six islands 201. Of course, the control pin 202 and the low voltage driving chip 401 and the high voltage driving chip 402 may be connected by other materials with small resistivity.
The driving chip 40, the frame 20, the first conductive members 501, the insulated gate bipolar transistors 30 and the substrate 10 are sequentially arranged along the thickness direction of the substrate 10, the number of the first conductive members 501 is the same as the number of the insulated gate bipolar transistors 30, the power pins 203 are connected with the insulated gate bipolar transistors 30 through the first conductive members 501, the number of the second conductive members 502 is the same as the number of the diodes 31, and the power pins 203 are connected with the diodes 31 through the second conductive members 502. Therefore, the first conductive member 501 can support the substrate 10 and the frame 20 while conducting electricity, so as to avoid the relative movement of the substrate 10 and the frame 20, and make the structure of the intelligent power module 100 more stable.
During processing, the first conductive member 501 and the second conductive member 502 are connected with the power pin 203, the insulated gate bipolar transistor 30 and the diode 31 are pre-fixed on the substrate 10 through silver paste, the driving chip 40 is pre-fixed on the base island 201 through silver paste, then sintering is performed to enable the insulated gate bipolar transistor 30 and the diode 31 to be stably fixed on the substrate 10, the driving chip 40 to be stably fixed on the base island 201, silver paste is coated on the insulated gate bipolar transistor 30 for being connected with the first conductive member 501, silver paste is coated on the diode 31 for being connected with the second conductive member 502, sintering is performed to enable the insulated gate bipolar transistor 30 to be stably connected with the first conductive member 501, and the diode 31 is stably connected with the second conductive member 502, and finally injection molding is performed to obtain the intelligent power module 100. Therefore, by arranging the first conductive piece 501 and the second conductive piece 502, the aluminum wire welding process can be saved, the replacement of wires is avoided, the phenomena of crater, bonding non-sticking, failure and the like are avoided, and the packaging efficiency of the intelligent power module 100 is improved.
According to the intelligent power module 100 of the embodiment of the present invention, by disposing the first conductive member 501 and the second conductive member 502 between the substrate 10 and the frame 20, two ends of the first conductive member 501 are respectively connected to the power pin 203 and the insulated gate bipolar transistor 30, and two ends of the second conductive member 502 are respectively connected to the power pin 203 and the diode 31. Thereby, compared to the conventional intelligent power module, an aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module 100 can be improved.
According to some embodiments of the present invention, as shown in fig. 4 and 9, the insulated gate bipolar transistor 30 has an emitter 301, and both ends of a first conductive member 501 are connected to the emitter 301 and the power pin 203, respectively. Wherein the cross-sectional area of the first conductive member 501 is smaller than the cross-sectional area of the emitter 301. By doing so, while ensuring that the first conductive member 501 can be connected to the emitter 301, the first conductive member 501 is prevented from being connected to other positions of the insulated gate bipolar transistor 30 through silver paste, so that occurrence of a short circuit can be prevented.
Or the diode 31 has an anode 313, and two ends of the second conductive member 502 are respectively connected to the anode 313 and the power pin 203, wherein the cross-sectional area of the second conductive member 502 is smaller than the cross-sectional area of the anode 313. By doing so, while ensuring that the second conductive member 502 can be connected to the anode 313, the second conductive member 502 is prevented from being connected to other positions of the diode 31 through silver paste, so that short circuit can be prevented from occurring.
Alternatively, the diode 31 may be a fast recovery diode. But is not limited thereto.
Further, the insulated gate bipolar transistor 30 is disposed adjacent to the control pin 202 in the width direction of the substrate 10, so that the distance between the driving chip 40 and the insulated gate bipolar transistor 30 can be shortened, which is advantageous for connecting the control pin 202 to the insulated gate bipolar transistor 30.
The power pins 203 include first power pins 2031, and ends of the first power pins 2031 extend to the control pins 202 in the width direction of the substrate 10. The first conductive member 501 is disposed at an end of the first power pin 2031, and the end of the first power pin 2031 is near an end of the first power pin 2031 adjacent to the control pin 202.
Referring to fig. 1 to 5, the number of power pins 203 is eight, the eight power pins 203 are spaced apart in the width direction of the substrate 10, six of the eight power pins 203 are first power pins 2031, and each first power pin 2031 extends in the width direction of the substrate 10. One end of each first power pin 2031 extends into the plastic package housing 60 and along the direction extending to the vicinity of the control pin 202, and the first conductive member 501 is disposed on the side of the end of the first power pin 2031 adjacent to the substrate 10, so that the first conductive member 501 is connected to the insulated gate bipolar transistor 30. The other end of each first power pin 2031 protrudes from the power side of the plastic package case 60 outside the plastic package case 60. Thereby, the length of the first power pin 2031 is increased, so that the structural strength of the frame 20 can be improved.
Further, the control pins 202 include a high-voltage control pin 2022 and a low-voltage control pin 2021, the first power pin 2031 includes a high-voltage power pin 2032 and a low-voltage power pin 2033, the high-voltage power pin 2032 is connected to the high-voltage control pin 2022 in the width direction of the substrate 10, and the low-voltage power pin 2033 is spaced apart from the low-voltage control pin 2021 in the width direction of the substrate 10. For example, in the example of fig. 1-8, six first power pins 2031 include three low voltage power pins 2033 and three high voltage power pins 2032, one first conductive element 501 is provided on each low voltage power pin 2033, and the low voltage power pins 2033 are connected to the emitter 301 of the low voltage insulated gate bipolar transistor 304 through the first conductive element 501. The three high voltage power pins 2032 are respectively connected to the three high voltage control pins 2022, and each high voltage power pin 2032 is provided with a first conductive member 501 and a fourth conductive member 504, where the first conductive member 501 is located approximately at the connection between the high voltage power pin 2032 and the high voltage control pin 2022, and the fourth conductive member 504 is adjacent to the edge of the substrate 10. Thus, the high voltage power pin 2032 and the high voltage control pin 2022 can share one conductive member, which saves the number of conductive members, can further improve the structural strength of the frame 20, and can reduce the weight of the intelligent power module 100.
According to some embodiments of the present invention, the control pin 202 includes a first control pin 2023, the insulated gate bipolar transistor 30 has a gate 302, and the intelligent power module 100 further includes a third conductive member 503, the third conductive member 503 is located between the substrate 10 and the frame 20, and two ends of the third conductive member 503 are respectively connected to the gate 302 and the first control pin 2023. As shown in fig. 1 to 5, the first control pins 2023 and the third conductive members 503 are six, the third conductive members 503 are located at the ends of the first control pins 2023, that is, the third conductive members 503 are located near one ends of the first control pins 2023 adjacent to the power pins 203, two of the six first control pins 2023 are located at one ends of the substrate 10 in the length direction, the two first control pins 2023 are spaced apart in the width direction of the substrate 10, the free ends of the two first control pins 2023 extend from one side of the substrate 10 in the length direction, the remaining four first control pins 2023 are spaced apart in the length direction of the substrate 10, and the free ends of the four first control pins 2023 extend from one side of the substrate 10 in the width direction.
Therefore, through the third conductive member 503, the first control pin 2023 and the insulated gate bipolar transistor 30 can be electrically connected, so that an aluminum wire welding process is saved, and replacement of wires is avoided, and further phenomena such as crater, bonding non-sticking station, failure and the like can be avoided, the packaging efficiency of the intelligent power module 100 is improved, meanwhile, the third conductive member 503 can further support the substrate 10 and the frame 20, relative movement of the substrate 10 and the frame 20 is avoided, and the structure of the intelligent power module 100 is more stable.
Note that, the three low-voltage power pins 2033 are also the first control pins 2023.
Wherein, as shown in fig. 1-5, the cross-sectional area of the third conductive member 503 is smaller than the cross-sectional area of the gate 302. By doing so, the third conductive member 503 is prevented from being connected to other positions of the insulated gate bipolar transistor 30 by silver paste while ensuring that the third conductive member 503 can be connected to the gate electrode 302, so that occurrence of a short circuit can be prevented.
According to some embodiments of the invention, the cross-sectional area of the third conductive member 503 is smaller than the cross-sectional area of the first conductive member 501. Since the size of the gate 302 on the insulated gate bipolar transistor 30 is smaller than the size of the emitter 301, by making the cross-sectional area of the third conductive member 503 smaller than the cross-sectional area of the first conductive member 501, the size of the third conductive member 503 can be adapted to the size of the gate 302, the size of the first conductive member 501 can be adapted to the size of the emitter 301, and the space between the emitter 301 and the gate 302 is smaller, and the cross-sectional area of the third conductive member 503 is smaller, connection of the third conductive member 503 to the emitter 301 can be avoided.
According to some embodiments of the present application, referring to fig. 1-5, the smart power module 100 further comprises a fourth conductive element 504, the fourth conductive element 504 being connected between the substrate 10 and the power pin 203. For example, the number of the fourth conductive members 504 is four, and the four fourth conductive members 504 are respectively disposed on one side of the four power pins 203 adjacent to the substrate 10, so that the electrical connection between the substrate 10 and the power pins 203 can be achieved through the fourth conductive members 504. The three fourth conductive members 504 are respectively disposed on the three first power pins 2031, and the three fourth conductive members 504 are disposed adjacent to an edge of the substrate 10 at a side far away from the control pins 202, that is, the three fourth conductive members 504 are disposed adjacent to a power side of the plastic package housing 60, at this time, the fourth conductive members 504 can cooperate with the first conductive members 501 to support at two sides of the power pins 203 in a length direction, and the power pins 203 do not need to be bent to connect with the substrate 10, so that the size of the substrate 10 is not limited between the control pins 202 and the power pins 203.
Further, the cross-sectional area of the fourth conductive member 504 is equal to or smaller than the cross-sectional area of the first conductive member 501. When the cross-sectional area of the fourth conductive element 504 is equal to that of the first conductive element 501, the fourth conductive element 504 and the first conductive element 501 have the same structure, and the fourth conductive element 504 and the first conductive element 501 can be interchanged, so that the types of components are reduced. When the cross-sectional area of the fourth conductive member 504 is smaller than that of the first conductive member 501, the size of the fourth conductive member 504 can be reduced and the weight of the frame 20 can be reduced while ensuring that the fourth conductive member 504 can be connected to the substrate 10 and the power pins 203.
In some alternative embodiments, the first conductive member 501 is connected to the power pin 203 by ultrasonic welding, solder paste welding, or sintering, and/or the second conductive member 502 is connected to the power pin 203 by ultrasonic welding, solder paste welding, or sintering, and/or the fourth conductive member 504 is connected to the power pin 203 by ultrasonic welding, solder paste welding, or sintering. At least two of the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 are connected to the power pin 203 in the same manner, and one of an ultrasonic welding manner, a solder paste welding manner and a sintering manner may be adopted, or the connection manners of the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 and the power pin 203 are different, and an ultrasonic welding manner, a solder paste welding manner and a sintering manner may be adopted respectively. Therefore, the connection modes of the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 and the power pins 203 are the same and simple, the operation is convenient, and the packaging efficiency of the intelligent power module 100 can be further improved.
Likewise, the third conductive member 503 is connected to the first control pin 2023 by ultrasonic welding, solder paste welding, or sintering. In this way, the connection mode of the third conductive member 503 and the first control pin 2023 is the same and simple, so that the operation is convenient, and the packaging efficiency of the intelligent power module 100 can be further improved
According to some embodiments of the present invention, referring to fig. 4 and 6, each control pin 202 includes a first pin segment 2024 and a second pin segment 2025 connected to each other, the second pin segment 2025 being perpendicular to the first pin segment 2024 and located on a side of the first pin segment 2024 remote from the substrate 10, the first pin segment 2024 being located within the plastic package housing 60, the second pin segment 2025 being located outside the plastic package housing 60. Likewise, each power pin 203 includes a third pin segment 2034 and a fourth pin segment 2035 connected to each other, the fourth pin segment 2035 being perpendicular to the third pin segment 2034 and on a side of the third pin segment 2034 remote from the substrate 10, the third pin segment 2034 being located within the plastic housing 60, the fourth pin segment 2035 being located outside of the plastic housing 60.
Wherein, the side surface of the first lead segment 2024 away from the substrate 10, the side surface of the third lead segment 2034 away from the substrate 10, and the side surface of the island 201 away from the substrate 10 are flush in the thickness direction of the substrate 10.
One end of the board 10 in the width direction extends to one end of the base island 201 adjacent to the control pin 202, and the other end of the board 10 in the width direction extends to one end of the third pin segment 2034 adjacent to the fourth pin segment 2035. Therefore, the size of the substrate 10 is not limited between the control pins 202 and the power pins 203, and two sides of the substrate 10 in the width direction of the present application can be extended to the edge of the plastic package housing 60, so that the size of the substrate 10 is increased, and the heat dissipation efficiency of the intelligent power module 100 can be improved.
According to some embodiments of the present invention, the insulated gate bipolar transistor 30 and the diode 31 are plural, and in the description of the present invention, "plural" means two or more. The plurality of insulated gate bipolar transistors 30 are spaced apart in the length direction of the substrate 10, and the plurality of diodes 31 are spaced apart in the length direction of the substrate 10. For example, in the example of fig. 1 to 8, the wiring layer of the substrate 10 is divided into four functional regions 101, the four functional regions 101101 are spaced apart along the length direction of the substrate 10, the four functional regions 101 are sequentially a first region 1011, a second region 1012, a third region 1013, and a fourth region 1014 along the length direction of the substrate 10, one low-voltage insulated gate bipolar transistor 304 and one low-voltage diode 311 are provided in each of the first region 1011, the second region 1012, and the third region 1013, three high-voltage insulated gate bipolar transistors 303 and three high-voltage diodes 312 are provided in the fourth region 1014, and the three high-voltage insulated gate bipolar transistors 303 are spaced apart along the length direction of the substrate 10, and the three high-voltage diodes 312 are spaced apart along the length direction of the substrate 10.
Wherein adjacent two insulated gate bipolar transistors 30 are staggered in the width direction of the substrate 10. Specifically, referring to fig. 5, two adjacent low-voltage insulated gate bipolar transistors 304 are staggered in the width direction of the substrate 10 (i.e., the low-voltage insulated gate bipolar transistors 304 of the first region 1011 and the second region 1012), two adjacent high-voltage insulated gate bipolar transistors 303 are staggered in the width direction of the substrate 10 (i.e., the high-voltage insulated gate bipolar transistors 303 of the fourth region 1014), and two adjacent low-voltage insulated gate bipolar transistors 304 high-voltage power pins 2032 are staggered in the width direction of the substrate 10 (i.e., the low-voltage insulated gate bipolar transistors 304 of the third region 1013, the high-voltage insulated gate bipolar transistors 303 of the fourth region 1014). Therefore, the plurality of insulated gate bipolar transistors 30 can be uniformly distributed on the substrate 10, so that heat generated by the operation of the plurality of insulated gate bipolar transistors 30 can be uniformly distributed on the substrate 10, and further, the heat dissipation efficiency of the intelligent power module 100 can be further improved.
Adjacent two diodes 31 are offset in the width direction of the substrate 10. Specifically, referring to fig. 5, two adjacent low-voltage diodes 311 are offset in the width direction of the substrate 10 (i.e., the low-voltage diodes 311 of the first region 1011 and the second region 1012), two adjacent high-voltage diodes 312 are offset in the width direction of the substrate 10 (i.e., the high-voltage diodes 312 of the fourth region 1014), and two adjacent low-voltage diodes 311 are offset in the width direction of the substrate 10 (i.e., the low-voltage diodes 311 of the third region 1013 and the high-voltage diodes 312 of the fourth region 1014). Therefore, the plurality of diodes 31 can be uniformly distributed on the substrate 10, so that heat generated by the operation of the plurality of diodes 31 can be uniformly distributed on the substrate 10, and further, the heat dissipation efficiency of the intelligent power module 100 can be further improved.
Optionally, the substrate 10 may be a ceramic copper clad laminate, where the ceramic copper clad laminate includes a first copper layer 102 (circuit layer), a ceramic layer 103 (insulating layer) and a second copper layer 104 arranged along a thickness direction, where the insulated gate bipolar transistor 30 and the diode 31 are connected to the first copper layer 102, and a side surface of the second copper layer 104 far away from the insulated gate bipolar transistor 30 and the diode 31 is flush with a bottom surface of the plastic package case 60 and exposed outside the plastic package case 60, and when the insulated gate bipolar transistor 30 and the diode 31 work to generate heat, the heat can be transferred to the second copper layer 104 through the first copper layer 102 and the ceramic layer 103, and the second copper layer 104 exchanges heat with the outside, so as to realize heat dissipation of the intelligent power module 100.
Other configurations and operations of the intelligent power module 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present application, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.