技术领域Technical field
本发明涉及体声波谐振器领域，尤其涉及一种带单对侧向激励电极的P(VDF-TrFE)薄膜体声波谐振器。The invention relates to the field of bulk acoustic wave resonators, and in particular to a P(VDF-TrFE) thin film bulk acoustic wave resonator with a single pair of lateral excitation electrodes.
背景技术Background technique
随着5G通信技术的日益发展，对通信频段的要求越来越高。薄膜体声波谐振器(FBAR)因其体积小、质量轻、插入损耗低、频带宽以及质量因子高等优点成为射频通信领域的研究热点之一。射频通信技术的迅猛发展，对射频滤波器提出了更高频段、更高性能、更低功耗、更小体积的要求，但目前仍缺乏高性能的柔性FBAR滤波器。With the increasing development of 5G communication technology, the requirements for communication frequency bands are getting higher and higher. Film bulk acoustic resonator (FBAR) has become one of the research hotspots in the field of radio frequency communications due to its advantages of small size, light weight, low insertion loss, wide frequency bandwidth and high quality factor. The rapid development of radio frequency communication technology has put forward requirements for higher frequency bands, higher performance, lower power consumption, and smaller size for radio frequency filters. However, there is still a lack of high-performance flexible FBAR filters.
现有主流的滤波器件都是采用多晶压电材料，如无机压电晶体ZnO或AlN，但它们无法做成具备高拉升强度的柔性滤波器。P(VDF-TrFE)作为一种高性能压电聚合物，因其较高的机电耦合系数和压电常数等特点而引起了很多研究关注，包括P(VDF-TrFE)的瑞利波SAW器件、兰姆波器件、P(VDF-TrFE)的SAW网络结构以及基于P(VDF-TrFE)和SiO2复合材料的压电谐振器等。Existing mainstream filter devices use polycrystalline piezoelectric materials, such as inorganic piezoelectric crystals ZnO or AlN, but they cannot be made into flexible filters with high pull-up strength. P(VDF-TrFE), as a high-performance piezoelectric polymer, has attracted a lot of research attention due to its high electromechanical coupling coefficient and piezoelectric constant, including Rayleigh wave SAW devices of P(VDF-TrFE) , Lamb wave devices, SAW network structures of P(VDF-TrFE), and piezoelectric resonators based on P(VDF-TrFE) and SiO2 composite materials, etc.
公开号为CN108134589A的中国专利文献公开了一种薄膜体声波谐振器，包括从下到上依次设置的基底、底电极、压电层和顶电极，其中基底与底电极之间设有反射界面：所述的底电极、压电层和顶电极中，至少有一层的形状与其它层不同。The Chinese patent document with publication number CN108134589A discloses a thin film bulk acoustic resonator, which includes a substrate, a bottom electrode, a piezoelectric layer and a top electrode arranged in sequence from bottom to top, with a reflective interface between the substrate and the bottom electrode: Among the bottom electrode, piezoelectric layer and top electrode, at least one layer has a shape different from other layers.
公开号为CN109889181A的中国专利文献公开了一种复合柔性体声波谐振器及其制备方法，包括由下至上依次设置的基底、底电极、压电层和顶电极，所述基底为聚酰亚胺和氮化硼复合的复合柔性薄膜基底，所述复合柔性薄膜基底的厚度为17.5-22.5μm。The Chinese patent document with publication number CN109889181A discloses a composite flexible volume acoustic resonator and a preparation method thereof, including a base, a bottom electrode, a piezoelectric layer and a top electrode arranged in sequence from bottom to top. The base is polyimide. A composite flexible film substrate composed of boron nitride and boron nitride, the thickness of the composite flexible film substrate is 17.5-22.5 μm.
公开号为CN109361373A的中国专利文献公开了一种柔性薄膜体声波谐振器及其制备方法，包括由下至上依次设置的衬底、下电极、压电层和上电极：所述上电极和下电极的材质为石墨烯、碳纳米管CNT或聚3，4-乙烯二氧噻吩PEDOT，所述压电层的材质为聚偏氟乙烯PVDF或共聚物P(VDF-TrFE)与ZnO纳米棒、锆钛酸铅PZT或氮化铝AIN的复合材料。The Chinese patent document with publication number CN109361373A discloses a flexible thin film bulk acoustic resonator and a preparation method thereof, including a substrate, a lower electrode, a piezoelectric layer and an upper electrode arranged in sequence from bottom to top: the upper electrode and the lower electrode The material of the piezoelectric layer is graphene, carbon nanotube CNT or poly-3,4-ethylenedioxythiophene PEDOT. The material of the piezoelectric layer is polyvinylidene fluoride PVDF or copolymer P (VDF-TrFE) and ZnO nanorods, zirconium Composite materials of lead titanate PZT or aluminum nitride AIN.
这些薄膜体声波谐振器均为三明治结构，没有考虑到薄膜体声波器件的激励方式有厚度场激励模式和横向场激励模式，这两种激励模式都会引起压电基片体内的质点产生厚度剪切振动。如果可以使得厚度模式和横向场激励模式有效叠加，就可以很大程度提高柔性P(VDF-TrFE)FBAR的耦合系数和品质因数，进而实现柔性FBAR滤波器的制作。因此，有必要提出一种新型结构P(VDF-TrFE)体声波谐振器以解决上述问题。这种优化后的P(VDF-TrFE)FBAR的激励模式可以作为未来实现柔性射频滤波器的重要设计指南。These thin film bulk acoustic wave resonators are all sandwich structures. They do not consider that the excitation modes of thin film bulk acoustic wave devices include thickness field excitation mode and transverse field excitation mode. Both excitation modes will cause thickness shearing of particles in the piezoelectric substrate body. vibration. If the thickness mode and the transverse field excitation mode can be effectively superimposed, the coupling coefficient and quality factor of the flexible P(VDF-TrFE) FBAR can be greatly improved, thereby realizing the production of flexible FBAR filters. Therefore, it is necessary to propose a new structural P(VDF-TrFE) bulk acoustic wave resonator to solve the above problems. This optimized excitation mode of P(VDF-TrFE)FBAR can be used as an important design guide for realizing flexible RF filters in the future.
发明内容Contents of the invention
为了解决现有技术的不足，本发明提供了一种带单对侧向激励电极的P(VDF-TrFE)薄膜体声波谐振器，提高有效机电耦合系数和质量因子。In order to solve the deficiencies of the existing technology, the present invention provides a P(VDF-TrFE) thin film bulk acoustic resonator with a single pair of lateral excitation electrodes, which improves the effective electromechanical coupling coefficient and quality factor.
一种带单对侧向激励电极的P(VDF-TrFE)薄膜体声波谐振器，包括压电基片和分别设于压电基片上、下侧表面的上电极和下电极，上电极包括第一电极和第二电极；A P(VDF-TrFE) thin film bulk acoustic resonator with a single pair of lateral excitation electrodes, including a piezoelectric substrate and upper and lower electrodes respectively provided on the upper and lower surfaces of the piezoelectric substrate. The upper electrode includes a third a first electrode and a second electrode;
压电基片的材料为偏氟乙烯和三氟乙烯的共聚物。优选地，下电极的截面形状和压电基片的截面形状基本相同，以提高薄膜体声波谐振器的性能。The material of the piezoelectric substrate is a copolymer of vinylidene fluoride and trifluoroethylene. Preferably, the cross-sectional shape of the lower electrode and the piezoelectric substrate are substantially the same to improve the performance of the thin film bulk acoustic resonator.
优选地，第一电极和第二电极的宽度为10～30μm，第一电极和第二电极间的间距为20～40μm，以根据实际使用工况优化薄膜体声波谐振器的性能。Preferably, the width of the first electrode and the second electrode is 10-30 μm, and the spacing between the first electrode and the second electrode is 20-40 μm, so as to optimize the performance of the thin film bulk acoustic resonator according to actual usage conditions.
优选地，第一电极和第二电极的宽度为20μm、第一电极和第二电极间的间距为40μm，以使薄膜体声波谐振器达到最佳性能。Preferably, the width of the first electrode and the second electrode is 20 μm, and the spacing between the first electrode and the second electrode is 40 μm, so that the thin film bulk acoustic resonator can achieve optimal performance.
优选地，偏氟乙烯和三氟乙烯的摩尔比为7∶3。Preferably, the molar ratio of vinylidene fluoride to trifluoroethylene is 7:3.
优选地，第一电极的轴线和第二电极的轴线基本平行，以使薄膜体声波谐振器达到最佳性能。更优选为第一电极的轴线和第二电极的轴线完全平行。Preferably, the axis of the first electrode and the axis of the second electrode are substantially parallel to achieve optimal performance of the thin film bulk acoustic resonator. More preferably, the axis of the first electrode and the axis of the second electrode are completely parallel.
优选地，压电基片的厚度为1～10μm，以使压电基片具有声阻抗较低、压电系数较高等优点。第一电极、第二电极和下电极的厚度均为100～200nm，以使第一电极、第二电极和下电极具有较好的延展性、导热性和导电性。Preferably, the thickness of the piezoelectric substrate is 1 to 10 μm, so that the piezoelectric substrate has the advantages of low acoustic impedance and high piezoelectric coefficient. The thicknesses of the first electrode, the second electrode and the lower electrode are all 100-200 nm, so that the first electrode, the second electrode and the lower electrode have better ductility, thermal conductivity and electrical conductivity.
优选地，第一电极、第二电极和下电极的材料均为铝，以使第一电极、第二电极和下电极具有较好的延展性、导热性和导电性。Preferably, the first electrode, the second electrode and the lower electrode are all made of aluminum, so that the first electrode, the second electrode and the lower electrode have better ductility, thermal conductivity and electrical conductivity.
进一步地，第一电极、第二电极和下电极通过硬掩模板来热蒸发或磁控溅射在压电基片上沉积铝电极制成，第一电极、第二电极和下电极的制造工艺简单且成本较低。Further, the first electrode, the second electrode and the lower electrode are made by depositing aluminum electrodes on the piezoelectric substrate through thermal evaporation or magnetron sputtering using a hard mask. The manufacturing process of the first electrode, the second electrode and the lower electrode is simple. And the cost is lower.
优选地，薄膜体声波谐振器的形状为正方形、五边形或圆形，以使薄膜体声波谐振器的结构简单并便于制造和安装。Preferably, the shape of the thin film bulk acoustic resonator is square, pentagonal or circular, so that the structure of the thin film bulk acoustic resonator is simple and easy to manufacture and install.
本发明还提供了如上任一薄膜体声波谐振器的制备方法，包括以下步骤：The present invention also provides a method for preparing any of the above thin film bulk acoustic resonators, which includes the following steps:
(1)制备压电基片，(1) Prepare piezoelectric substrate,
(2)在压电基片的上、下侧表面分别沉积形成上电极和下电极。(2) Deposit the upper electrode and the lower electrode respectively on the upper and lower surfaces of the piezoelectric substrate.
优选地，压电基片采用旋涂或滴涂法制备，以使压电基片的制造工艺简单且成本较低。Preferably, the piezoelectric substrate is prepared by spin coating or drop coating, so that the manufacturing process of the piezoelectric substrate is simple and the cost is low.
本发明的有益效果：Beneficial effects of the present invention:
本发明提供的带单对侧向激励电极的P(VDF-TrFE)薄膜体声波谐振器通过改变第一电极的最大宽度、第二电极的最大宽度和第一电极与第二电极间的最小间距，能够充分运用压电基片P(VDF-TrFE)在d33和d15方向的压电系数结构，使压电基片横向的振动更加强烈，提高了薄膜体声波谐振器有效机电耦合系数和质量因子；同时本发明的薄膜体声波谐振器其他寄生模态的能量较少，进一步提高了薄膜体声波谐振器的性能。本发明提供的薄膜体声波谐振器的制造方法工艺简单，便于制造且成本较低。The P(VDF-TrFE) thin film bulk acoustic resonator with a single pair of lateral excitation electrodes provided by the present invention changes the maximum width of the first electrode, the maximum width of the second electrode and the minimum distance between the first electrode and the second electrode. , can make full use of the piezoelectric coefficient structure of the piezoelectric substrate P (VDF-TrFE) in the d33 and d15 directions, making the lateral vibration of the piezoelectric substrate more intense and improving the effective electromechanical coupling coefficient and quality factor of the thin film bulk acoustic resonator. ; At the same time, the energy of other parasitic modes of the thin film bulk acoustic resonator of the present invention is less, which further improves the performance of the thin film bulk acoustic resonator. The manufacturing method of the thin film bulk acoustic resonator provided by the invention is simple in process, easy to manufacture and low in cost.
附图说明Description of the drawings
图1为本发明的薄膜体声波谐振器的立体结构示意图。Figure 1 is a schematic three-dimensional structural diagram of the thin film bulk acoustic resonator of the present invention.
图2为本发明的薄膜体声波谐振器的剖面结构示意图。Figure 2 is a schematic cross-sectional structural view of the thin film bulk acoustic resonator of the present invention.
图3为本发明的薄膜体声波谐振器的制备方法示意图。Figure 3 is a schematic diagram of the preparation method of the thin film bulk acoustic resonator of the present invention.
图4为本发明的薄膜体声波谐振器在两种激励模式叠加下的状态图。Figure 4 is a state diagram of the thin film bulk acoustic resonator of the present invention under the superposition of two excitation modes.
图5为本发明的薄膜体声波谐振器的阻抗曲线图。Figure 5 is an impedance curve diagram of the thin film bulk acoustic resonator of the present invention.
图6为本发明的薄膜体声波谐振器的电极间距对其有效机电耦合系数和质量因子的影响曲线图。Figure 6 is a graph showing the influence of the electrode spacing of the thin film bulk acoustic resonator on its effective electromechanical coupling coefficient and quality factor.
图7为本发明的薄膜体声波谐振器的电极宽度度其有效机电耦合系数和质量因子的影响曲线图。Figure 7 is a graph showing the influence of the electrode width on the effective electromechanical coupling coefficient and quality factor of the thin film bulk acoustic resonator of the present invention.
具体实施方式Detailed ways
如图1和图2所示，一种带单对侧向激励电极的P(VDF-TrFE)薄膜体声波谐振器，包括上电极、压电基片4和下电极3，上电极设置在压电基片4的上侧表面，下电极设置在压电基片4的下侧表面，压电基片4的材料为偏氟乙烯和三氟乙烯的共聚物(P(VDF-TrFE))，其中偏氟乙烯和三氟乙烯的摩尔比为7：3。上电极包括第一电极1和第二电极2，第一电极1的轴线和第二电极2的轴线基本平行，当分别对第一电极1、第二电极2和下电极3施加直流偏置信号时，压电基片4中会形成电场，薄膜体声波谐振器利用逆压电效应将输入电信号转换为机械谐振，再利用压电效应将机械谐振转换为电信号输出，通过改变第一电极1的宽度、第二电极2的宽度和第一电极1与第二电极2间的间距能够优化薄膜体声波谐振器的性能，提高薄膜体声波谐振器有效机电耦合系数和质量因子。其中，压电基片4的激励模式为纵向电场和横向电场的叠加，这种电极设计可以充分运用压电基片4在d33和d15方向的压电系数结构，使压电基片4横向的振动更加强烈；同时这种电极设计也减少了其他寄生模态的能量，进一步提高了薄膜体声波谐振器的性能。As shown in Figures 1 and 2, a P(VDF-TrFE) thin film bulk acoustic resonator with a single pair of lateral excitation electrodes includes an upper electrode, a piezoelectric substrate 4 and a lower electrode 3. The upper electrode is arranged on the piezoelectric The upper surface of the electrical substrate 4 and the lower electrode are arranged on the lower surface of the piezoelectric substrate 4. The material of the piezoelectric substrate 4 is a copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)). The molar ratio of vinylidene fluoride to trifluoroethylene is 7:3. The upper electrode includes a first electrode 1 and a second electrode 2. The axis of the first electrode 1 and the axis of the second electrode 2 are substantially parallel. When a DC bias signal is applied to the first electrode 1, the second electrode 2 and the lower electrode 3 respectively, When The width of 1, the width of the second electrode 2 and the distance between the first electrode 1 and the second electrode 2 can optimize the performance of the thin film bulk acoustic resonator and improve the effective electromechanical coupling coefficient and quality factor of the thin film bulk acoustic resonator. Among them, the excitation mode of the piezoelectric substrate 4 is the superposition of the longitudinal electric field and the transverse electric field. This electrode design can make full use of the piezoelectric coefficient structure of the piezoelectric substrate 4 in the d33 and d15 directions, making the piezoelectric substrate 4 transverse. The vibration is more intense; at the same time, this electrode design also reduces the energy of other parasitic modes, further improving the performance of the thin film bulk acoustic resonator.
具体地，P(VDF-TrFE)压电常数矩阵为：Specifically, the P(VDF-TrFE) piezoelectric constant matrix is:
P(VDF-TrFE)压电系数[pC/N]：P(VDF-TrFE) piezoelectric coefficient [pC/N]:
D15：施加电场方向沿x轴，垂直于y轴的平面内产生的剪切应变。D15: The shear strain generated in the plane where the applied electric field is along the x-axis and perpendicular to the y-axis.
D33：施加电场方向沿z轴，在z方向产生应变。D33: The direction of the applied electric field is along the z-axis, causing strain in the z-direction.
压电薄膜上方的一对平行电极，施加电场后，会在垂直于y轴的平面内产生的剪切应变，这里用到了P(VDF-TrFE)压电矩阵中的d15方向的压电系数，而压电薄膜上下方的电极，沿z轴方向施加电场后，会在z方向产生应变，这里用到了P(VDF-TrFE)压电矩阵中的d33方向的压电系数，从而得到纵向电场和横向电场的叠加。When an electric field is applied to a pair of parallel electrodes above the piezoelectric film, shear strain will be generated in a plane perpendicular to the y-axis. The piezoelectric coefficient in the d15 direction in the P(VDF-TrFE) piezoelectric matrix is used here. The electrodes above and below the piezoelectric film will produce strain in the z direction when an electric field is applied along the z-axis direction. Here, the piezoelectric coefficient in the d33 direction in the P(VDF-TrFE) piezoelectric matrix is used to obtain the longitudinal electric field and Superposition of transverse electric fields.
优选地，第一电极1的宽度为20μm，第二电极2的宽度为20μm，第一电极1和第二电极2间的间距为40μm，该设置方式使薄膜体声波谐振器达到最佳性能。第一电极1、第二电极2和下电极3的材料均为铝，且第一电极1、第二电极2和下电极3的厚度均为200nm，以使第一电极1、第二电极2和下电极3具有较好的延展性、导热性和导电性。压电基片4的厚度为1μm，宽度为100μm，以使压电基片4具有声阻抗较低、压电系数较高等优点。Preferably, the width of the first electrode 1 is 20 μm, the width of the second electrode 2 is 20 μm, and the spacing between the first electrode 1 and the second electrode 2 is 40 μm. This arrangement enables the thin film bulk acoustic resonator to achieve optimal performance. The materials of the first electrode 1 , the second electrode 2 and the lower electrode 3 are all aluminum, and the thicknesses of the first electrode 1 , the second electrode 2 and the lower electrode 3 are all 200 nm, so that the first electrode 1 and the second electrode 2 And the lower electrode 3 has better ductility, thermal conductivity and electrical conductivity. The thickness of the piezoelectric substrate 4 is 1 μm and the width is 100 μm, so that the piezoelectric substrate 4 has the advantages of low acoustic impedance and high piezoelectric coefficient.
如图3所示，薄膜体声波谐振器制备时，先制备压电基片4，再在压电基片4的上、下侧表面分别沉积形成上电极和下电极。具体地，压电基片4可以采用旋涂或滴涂法制备，其中，可以在压电基片4表面旋涂一层光刻胶，再用氧气刻蚀，以减小压电基片4的表面粗糙度，提升薄膜体声波谐振器的性能；第一电极1、第二电极2和下电极3通过硬掩模板来热蒸发或磁控溅射等方法在压电基片4上、下侧表面沉积金属铝电极完成制备，制造工艺简单且成本较低。As shown in Figure 3, when preparing a thin film bulk acoustic resonator, a piezoelectric substrate 4 is first prepared, and then an upper electrode and a lower electrode are respectively deposited on the upper and lower surfaces of the piezoelectric substrate 4. Specifically, the piezoelectric substrate 4 can be prepared by spin coating or drop coating, wherein a layer of photoresist can be spin-coated on the surface of the piezoelectric substrate 4 and then etched with oxygen to reduce the size of the piezoelectric substrate 4 The surface roughness improves the performance of the thin film bulk acoustic resonator; the first electrode 1, the second electrode 2 and the lower electrode 3 are formed on the upper and lower piezoelectric substrate 4 through thermal evaporation or magnetron sputtering through a hard mask. The metal aluminum electrode is deposited on the side surface to complete the preparation. The manufacturing process is simple and the cost is low.
如图4所示，当对第一电极1、第二电极2和下电极3施加横向电场与纵向电场的叠加激励时，从振动模式上能量被分散在第一电极1和第二电极2下方，声波能量也集中在第一电极1和第二电极2以下，获得纵向电场和横向电场的叠加从而产生最大强度的激励。具体地，薄膜体声波谐振器可通过质量因子Q和有效机电耦合系数来描述自身的性能，质量因子Q是一个衡量谐振器损失的参数，Q的值越高，器件损耗越小，器件性能越好；有效机电耦合系数/>表示fs和fp之间带宽的大小，质量因子Q和有效机电耦合系数的计算公式为：As shown in Figure 4, when the superimposed excitation of the transverse electric field and the longitudinal electric field is applied to the first electrode 1, the second electrode 2 and the lower electrode 3, the energy is dispersed under the first electrode 1 and the second electrode 2 from the vibration mode. , the sound wave energy is also concentrated below the first electrode 1 and the second electrode 2, obtaining the superposition of the longitudinal electric field and the transverse electric field to produce maximum intensity excitation. Specifically, the film bulk acoustic resonator can be obtained by the quality factor Q and the effective electromechanical coupling coefficient To describe its own performance, the quality factor Q is a parameter that measures the loss of the resonator. The higher the value of Q, the smaller the device loss and the better the device performance; the effective electromechanical coupling coefficient/> Indicates the size of the bandwidth between fs and fp . The calculation formula of the quality factor Q and the effective electromechanical coupling coefficient is:
dΔZ＝diff(phaserad(Z(1，1))，1)dΔZ=diff(phaserad(Z(1,1)),1)
df＝diff(abs(freq)，1)df=diff(abs(freq),1)
其中，f是谐振频率，Z是谐振器的阻抗，fs是谐振器的串联谐振频率，fp是谐振器的并联谐振频率，Qs是串联谐振频率下的质量因子，Qp是并联谐振频率下的质量因子，dΔZ是对阻抗相位的求导；df是对谐振频率的求导。where, f is the resonant frequency, Z is the impedance of the resonator, fs is the series resonant frequency of the resonator, fp is the parallel resonant frequency of the resonator, Qs is the quality factor at the series resonant frequency, Qp is the parallel resonance The quality factor at frequency, dΔZ is the derivation of the impedance phase; df is the derivation of the resonant frequency.
实施例1：Example 1:
如图5所示，薄膜体声波谐振器的压电基片4厚度为1μm，宽度为100μm，串联谐振频率fs＝562.36MHz，并联谐振频率fp＝578.17MHz，计算出的有效机电耦合系数为6.5％，具有较高的有效机电耦合系数。计算出的质量因子Qs为945，Qp为999这种结构的薄膜体声波谐振器充分利用了压电基片4在d33和d15方向的压电系数，使水平方向的振动更加强烈，同时也减少了其他寄生模态的能量，大大提高了有效机电耦合系数。As shown in Figure 5, the thickness of the piezoelectric substrate 4 of the thin film bulk acoustic resonator is 1 μm, the width is 100 μm, the series resonance frequency fs =562.36MHz, the parallel resonance frequency fp =578.17MHz, the calculated effective electromechanical coupling coefficient is 6.5%, which has a high effective electromechanical coupling coefficient. The calculated quality factor Qs is 945 and Qp is 999. The thin film bulk acoustic resonator with this structure makes full use of the piezoelectric coefficients of the piezoelectric substrate 4 in the d33 and d15 directions, making the vibration in the horizontal direction more intense, and at the same time It also reduces the energy of other parasitic modes and greatly improves the effective electromechanical coupling coefficient.
通过COMSOL多物理场仿真软件，对本发明二维结构进行了建模仿真，对电极间距进行参数化扫描，根据每种电极间距产生的阻抗曲线特性进行分析，依据公式(1)，计算出不同电极间距下的P(VDF-TrFE)FBAR的有效机电偶合系数和质量因子Q。如图6所示，随着电极间距的增加，有效机电耦合系数/>单调增加，电极间距超过40μm时，质量因子Q的值开始明显下降。Through the COMSOL multi-physics simulation software, the two-dimensional structure of the present invention was modeled and simulated, the electrode spacing was parametrically scanned, and the impedance curve characteristics generated by each electrode spacing were analyzed. According to formula (1), different electrodes were calculated. Effective electromechanical coupling coefficient of P(VDF-TrFE)FBAR under spacing and quality factor Q. As shown in Figure 6, as the electrode spacing increases, the effective electromechanical coupling coefficient/> Increases monotonically, and when the electrode spacing exceeds 40 μm, the value of the quality factor Q begins to decrease significantly.
同时也对压电薄膜上方的一对平行电极的宽度进行参数化扫描，根据每种电极宽度产生的阻抗曲线特性进行分析，依据公式(1)，计算出不同电极间距下的P(VDF-TrFE)FBAR的有效机电偶合系数和质量因子Q。如图7所示，随着电极宽度的增加，有效机电耦合系数/>基本不变，电极宽度为20μm时，质量因子Q达到最大值。At the same time, the width of a pair of parallel electrodes above the piezoelectric film was scanned parametrically, and the impedance curve characteristics generated by each electrode width were analyzed. According to formula (1), the P(VDF-TrFE at different electrode spacings was calculated ) Effective electromechanical coupling coefficient of FBAR and quality factor Q. As shown in Figure 7, as the electrode width increases, the effective electromechanical coupling coefficient/> Basically unchanged, when the electrode width is 20μm, the quality factor Q reaches the maximum value.
通过COMSOL软件模拟P(VDF-TrFE)薄膜体声波谐振器的振型，如图4所示，能量集中在压电薄膜上方一对平行电极和下电极之间，与典型三明治结构的薄膜体声波谐振器的振型相比，厚度方向的能量被分散在压电薄膜上方平行电极的下面，平行电极被施加激励后，所产生的水平方向能量的振动也叠加在一起，从而获得最大激励，优化了P(VDF-TrFE)薄膜体声波谐振器的性能。The vibration shape of the P(VDF-TrFE) film bulk acoustic resonator is simulated by COMSOL software. As shown in Figure 4, the energy is concentrated between a pair of parallel electrodes above the piezoelectric film and the lower electrode, which is similar to the typical sandwich structure of the film bulk acoustic wave. Compared with the vibration shape of the resonator, the energy in the thickness direction is dispersed under the parallel electrodes above the piezoelectric film. After the parallel electrodes are excited, the vibrations of the energy in the horizontal direction are also superimposed, thereby obtaining maximum excitation and optimization. The performance of P(VDF-TrFE) thin film bulk acoustic resonator was demonstrated.
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| CN202310958463.8ACN117200732A (en) | 2023-08-01 | 2023-08-01 | P (VDF-TrFE) film bulk acoustic resonator with single-side excitation electrode |
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| CN118432570A (en)* | 2024-04-18 | 2024-08-02 | 晨宸辰科技有限公司 | Method for increasing electromechanical coupling coefficient of XBAR device |
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| CN118432570A (en)* | 2024-04-18 | 2024-08-02 | 晨宸辰科技有限公司 | Method for increasing electromechanical coupling coefficient of XBAR device |
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