本申请是申请号为CN202310720627.3、申请日为2023年06月16日、发明名称为“掩模版的制造方法及系统”的母案申请的分案申请。This application is a divisional application of the parent application with application number CN202310720627.3, the filing date being June 16, 2023, and the invention title being “Mask Manufacturing Method and System”.
技术领域Technical field
本发明涉及半导体器件的制造技术领域，特别涉及一种掩模版的制造方法及系统。The present invention relates to the technical field of manufacturing semiconductor devices, and in particular to a mask manufacturing method and system.
背景技术Background technique
随着人工智能(Artificial Intelligence，简称AI)、第五代移动通信技术(5thGeneration Mobile Communication Technology，简称5G)、大数据、人工智能物联网(Artificial Intelligence&Internet of Things，简称AIoT)以及自动驾驶等创新型技术的发展，微处理器(CPU)和动态随机存储器(Dynamic Random Access Memory，简称DRAM)中器件特征尺寸的缩减呈现了加速和偏离摩尔定律的趋势，这无形中也加剧了半导体器件的制备难度。With the development of innovative technologies such as Artificial Intelligence (AI), 5th Generation Mobile Communication Technology (5G), big data, Artificial Intelligence & Internet of Things (AIoT), and autonomous driving, With the development of technology, the reduction of device feature sizes in microprocessors (CPUs) and Dynamic Random Access Memory (DRAM) has shown a trend of accelerating and deviating from Moore's Law, which has also intensified the difficulty of preparing semiconductor devices. .
目前，光刻是半导体制造过程中最复杂也是最难的工艺，其主要原理是在光照作用下，借助光致抗蚀剂(又名光刻胶)将掩模版上的图形转移到基片上。而且，随着半导体器件集成度的越来越高以及器件特征尺寸的越来越小，半导体器件制备所需的掩模版数量也越来越多，例如在10nm工艺节点下完成一个芯片的制备需要八十多块掩模版。显然，降低掩模版的制造成本可以降低半导体器件的生产成本。Currently, photolithography is the most complex and difficult process in the semiconductor manufacturing process. Its main principle is to transfer the pattern on the mask to the substrate with the help of photoresist (also known as photoresist) under the action of light. Moreover, as the integration level of semiconductor devices becomes higher and higher and the feature sizes of devices become smaller and smaller, the number of masks required for the preparation of semiconductor devices is also increasing. For example, it is necessary to complete the preparation of a chip at the 10nm process node. More than eighty masks. Obviously, reducing the manufacturing cost of the mask can reduce the production cost of semiconductor devices.
然而，在现有的空白掩模版的主流制造技术是平面磁控溅射沉积技术，由于该沉积技术中的正交电磁场对溅射离子的作用关系，溅射靶材在溅射中将产生不均匀冲蚀现象，从而造成溅射靶材的利用率普遍低下，只有30％左右，同时也影响空白掩模版的制造良率。近年来，磁控溅射设备改善后靶材的利用率提高到50％左右。另外，靶材原子被氩离子撞击出来后，约有1/6的溅射原子会淀积到真空室内壁或支架上，增加清洁真空设备的费用及停机时间。基于这些原因，空白掩模版本身的制造成本居高不下，良率难以提高。However, the current mainstream manufacturing technology for blank masks is planar magnetron sputtering deposition technology. Due to the effect of the orthogonal electromagnetic field on sputtered ions in this deposition technology, the sputtering target will produce inconsistencies during sputtering. The uniform erosion phenomenon results in a generally low utilization rate of sputtering targets, only about 30%, and also affects the manufacturing yield of blank masks. In recent years, the utilization rate of target materials has increased to about 50% after improvements in magnetron sputtering equipment. In addition, after the target atoms are struck by argon ions, about 1/6 of the sputtered atoms will be deposited on the wall or bracket of the vacuum chamber, increasing the cost and downtime of cleaning the vacuum equipment. For these reasons, the manufacturing cost of the blank mask version itself remains high, and it is difficult to improve the yield.
另外，空白掩模版的结构一般包括掩模基板(例如为玻璃基板)、沉积在掩模基板上的掩膜材料层(如铬膜等遮光膜)以及涂覆在掩膜材料层上的光刻胶。目前将空白掩模版进一步加工成具有所需的图案和线条的掩模版的制程通常包括：采用激光或电子束对空白掩模版的光刻胶进行曝光，并在曝光后进行显影，从而将所需的图案(例如电路图形等)转移到光刻胶中；之后再以光刻胶为掩膜，进一步蚀刻(etching)掩膜材料层，去除掉不被光刻胶覆盖的掩膜材料层，蚀刻结束后再清洗残留下来的光刻胶，最后保留下来的掩膜材料层便在空白掩模版的掩模基板上形成了所需图案和线条，由此制成具有所需图案和线条的掩模版，供下游芯片制造企业使用。In addition, the structure of the blank mask generally includes a mask substrate (for example, a glass substrate), a mask material layer (such as a chromium film and other light-shielding films) deposited on the mask substrate, and a photolithography layer coated on the mask material layer. glue. The current process of further processing a blank mask into a mask with the required patterns and lines usually includes: using a laser or electron beam to expose the photoresist of the blank mask, and developing it after the exposure, so that the required The pattern (such as circuit pattern, etc.) is transferred to the photoresist; then the photoresist is used as a mask to further etch the mask material layer, remove the mask material layer that is not covered by the photoresist, and etch After that, the remaining photoresist is cleaned, and the remaining mask material layer forms the required patterns and lines on the blank mask substrate, thus making a mask with the required patterns and lines. , for use by downstream chip manufacturing companies.
因此，如何简化掩模版的制作过程，提高制造效率和制造良率，并降低掩模版制作成本，成为本领域技术人员亟待解决的技术问题之一。Therefore, how to simplify the manufacturing process of the mask, improve the manufacturing efficiency and manufacturing yield, and reduce the manufacturing cost of the mask has become one of the technical problems that those skilled in the art need to solve urgently.
发明内容Contents of the invention
本发明的目的在于提供一种掩模版的制造方法及系统，能够降低简化掩模板的制造工艺，降低掩模版的制造成本并提高空白掩模版的制造良率。The object of the present invention is to provide a mask manufacturing method and system that can reduce and simplify the manufacturing process of the mask, reduce the manufacturing cost of the mask, and improve the manufacturing yield of the blank mask.
为实现上述目的，本发明提供一种掩模版的制造方法，其包括以下步骤：In order to achieve the above object, the present invention provides a method for manufacturing a mask, which includes the following steps:
S1，在一工艺机台上利用脉冲激光在掩模基板上进行脉冲激光沉积，以在所述掩模基板上形成所需的掩膜材料层，得到空白掩模版；S1. Use a pulse laser to perform pulse laser deposition on the mask substrate on a process machine to form the required mask material layer on the mask substrate to obtain a blank mask;
S2，在所述工艺机台上进一步采用所述脉冲激光对所述掩膜材料层进行激光直写，以在所述掩膜材料层中形成所需图案，得到掩模版。S2, further use the pulse laser to perform laser direct writing on the mask material layer on the process machine to form the required pattern in the mask material layer to obtain a mask.
可选地，所述步骤S1包括循环执行以下子步骤：Optionally, step S1 includes performing the following sub-steps cyclically:
S11，在所述工艺机台上采用所述脉冲激光，在所述掩模基板上进行脉冲激光沉积，以得到具有相应的掩膜材料层的空白掩模版；S11, use the pulse laser on the process machine to perform pulse laser deposition on the mask substrate to obtain a blank mask with a corresponding mask material layer;
S12，检测所述空白掩模版的性能是否达到目标；S12, detect whether the performance of the blank mask reaches the target;
S13，在检测到所述空白掩模版的性能未达标时，根据检测结果选择相应的激光表面处理方式，在所述工艺机台上对所述空白掩模版进行激光表面处理，以修整所述掩膜材料层的表面，或者去除所述掩膜材料层并修整所述掩模基板的表面。S13, when it is detected that the performance of the blank mask does not meet the standard, select the corresponding laser surface treatment method according to the detection results, and perform laser surface treatment on the blank mask on the process machine to trim the mask. The surface of the film material layer, or the mask material layer is removed and the surface of the mask substrate is trimmed.
可选地，在执行步骤S1之前，还包括步骤S0，提供待废弃的掩模版，并在所述工艺机台上对所述待废弃的掩模版进行激光表面处理，以去除所述待废弃的掩模版的掩模基板上的膜层，得到所述掩模基板。Optionally, before performing step S1, step S0 is also included, providing a mask to be discarded, and performing laser surface treatment on the mask to be discarded on the process machine to remove the mask to be discarded. The film layer on the mask substrate of the mask plate is used to obtain the mask substrate.
可选地，所述激光表面处理方式包括以下三种方式之一：Optionally, the laser surface treatment method includes one of the following three methods:
第一种方式，采用第一激光进行激光去膜，以去除所述掩模基板上的相应厚度的膜层；The first way is to use a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate;
第二种方式，采用不同于所述第一激光的第二激光对所述掩模基板上的膜层表面进行激光抛光；In a second way, a second laser different from the first laser is used to laser polish the surface of the film layer on the mask substrate;
第三种方式，先采用所述第一激光进行激光去膜，后采用所述第二激光进行激光抛光；The third method is to first use the first laser to perform laser film removal, and then use the second laser to perform laser polishing;
其中，所述第一激光或所述第二激光为所述脉冲激光。Wherein, the first laser or the second laser is the pulse laser.
可选地，所述脉冲激光同为所述第一激光或同为所述第二激光实现。Optionally, the pulsed lasers are both the first laser or the second laser.
可选地，在所述进行激光表面处理的过程中，在所述工艺机台上在线对所述掩模基板上的膜层表面进行形貌检测，并根据表面形貌检测的结果在线调整所述激光表面处理的过程中的工艺参数。Optionally, during the laser surface treatment process, the surface of the film layer on the mask substrate is inspected for topography online on the process machine, and the result of the surface topography inspection is adjusted online. Describe the process parameters in the laser surface treatment process.
可选地，在步骤S12中，检测所述空白掩模版基本结构的性能是否达到目标包括：检测所述掩膜材料层的厚度、表面平坦度以及所述空白掩模版的透射率和反射率中的至少一种性能指标是否达到目标。Optionally, in step S12, detecting whether the performance of the basic structure of the blank mask reaches the target includes: detecting the thickness of the mask material layer, surface flatness, and the transmittance and reflectivity of the blank mask. Whether at least one performance indicator reaches the target.
可选地，在步骤S12中检测到所述空白掩模版的性能未达标时，还调整脉冲激光沉积的工艺参数，以在步骤S13中的激光表面处理结束之后且需要再次执行步骤S11时，能在步骤S11中基于调整后的参数对激光表面处理后的空白掩模版执行相应的脉冲激光沉积工艺。Optionally, when it is detected in step S12 that the performance of the blank mask is not up to standard, the process parameters of pulse laser deposition are also adjusted so that after the laser surface treatment in step S13 is completed and step S11 needs to be performed again, the process parameters can be adjusted. In step S11, a corresponding pulse laser deposition process is performed on the blank mask after laser surface treatment based on the adjusted parameters.
基于同一发明构思，本发明还提供一种掩模版的制造系统，其包括集成在同一工艺机台上的：Based on the same inventive concept, the present invention also provides a mask manufacturing system, which includes: integrated on the same process machine:
脉冲激光沉积装置，用于利用所述工艺机台上的脉冲激光，在掩模基板上进行脉冲激光沉积，以在所述掩模基板上形成所需的掩膜材料层，得到空白掩模版；A pulse laser deposition device for utilizing the pulse laser on the process machine to perform pulse laser deposition on the mask substrate to form the required mask material layer on the mask substrate to obtain a blank mask;
脉冲激光直写装置，用于在所述工艺机台上进一步采用所述脉冲激光，对所述掩膜材料层进行激光直写，以在所述掩膜材料层中形成所需图案，得到掩模版；A pulse laser direct writing device is used to further use the pulse laser on the process machine to perform laser direct writing on the mask material layer to form a required pattern in the mask material layer to obtain a mask. stencil;
系统总控制装置，耦接所述脉冲激光沉积装置和所述脉冲激光直写装置，用于控制所述脉冲激光沉积装置和所述脉冲激光直写装置协调工作。A system overall control device is coupled to the pulse laser deposition device and the pulse laser direct writing device, and is used to control the pulse laser deposition device and the pulse laser direct writing device to work in a coordinated manner.
可选地，所述制造系统还包括集成在所述工艺机台上的：Optionally, the manufacturing system also includes: integrated on the process machine:
检测装置，用于检测所述空白掩模版的性能是否达到目标；A detection device used to detect whether the performance of the blank mask reaches the target;
激光表面处理装置，用于，在所述工艺机台上对所述空白掩模版进行激光表面处理，以修整所述掩膜材料层的表面，或者去除所述掩膜材料层并修整所述掩模基板的表面；Laser surface treatment device, used to perform laser surface treatment on the blank mask plate on the process machine to modify the surface of the mask material layer, or to remove the mask material layer and modify the mask material layer. The surface of the mold base plate;
其中，所述系统总控制装置还耦接所述激光表面处理装置和所述检测装置，用于在所述检测装置检测到所述空白掩模版的性能未达标时，控制所述脉冲激光沉积装置、所述检测装置和所述激光表面处理装置协调工作，使所述掩模基板在所述脉冲激光沉积装置、所述检测装置和所述激光表面处理装置中循环，直至所述空白掩模版的性能达到目标。Wherein, the system overall control device is also coupled to the laser surface treatment device and the detection device, and is used to control the pulse laser deposition device when the detection device detects that the performance of the blank mask is not up to standard. , the detection device and the laser surface treatment device work in coordination, so that the mask substrate circulates in the pulse laser deposition device, the detection device and the laser surface treatment device until the blank mask plate Performance hits target.
可选地，所述激光表面处理装置还用于在初始时，在所述工艺机台上利用所述脉冲激光或者另一激光对待废弃的掩模版进行激光表面处理，以去除所述待废弃的掩模版的掩模基板上的膜层，得到所述脉冲激光沉积装置中所需的掩模基板。Optionally, the laser surface treatment device is also used to initially perform laser surface treatment on the mask to be discarded using the pulse laser or another laser on the process machine to remove the mask to be discarded. The film layer on the mask substrate of the mask plate is used to obtain the mask substrate required in the pulse laser deposition device.
可选地，所述激光表面处理方式包括以下三种方式之一：Optionally, the laser surface treatment method includes one of the following three methods:
第一种方式，采用第一激光进行激光去膜，以去除所述掩模基板上的相应厚度的膜层；The first way is to use a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate;
第二种方式，采用不同于所述第一激光的第二激光对所述掩模基板上的膜层表面进行激光抛光；In a second way, a second laser different from the first laser is used to laser polish the surface of the film layer on the mask substrate;
第三种方式，先采用所述第一激光进行激光去膜，后采用所述第二激光进行激光抛光；The third method is to first use the first laser to perform laser film removal, and then use the second laser to perform laser polishing;
其中，所述第一激光或所述第二激光为所述脉冲激光。Wherein, the first laser or the second laser is the pulse laser.
可选地，所述第一激光或所述第二激光通过沿光路依次布设的快门、四分之一波片和起偏器、第一分束器、第二分束器分别传送到所述激光表面处理装置、所述脉冲激光沉积装置和所述脉冲激光直写装置。Optionally, the first laser or the second laser are respectively transmitted to the laser beam through a shutter, a quarter-wave plate and a polarizer, a first beam splitter, and a second beam splitter arranged sequentially along the optical path. Laser surface treatment device, the pulse laser deposition device and the pulse laser direct writing device.
可选地，所述激光表面处理装置包括第一扩束机构、调焦机构和第一扫描聚焦机构；所述第一扩束机构用于将所接收的第一激光或第二激光的光束光班增大后输出；所述调焦机构用于对所述扩束机构出射的激光进行调焦；所述第一扫描聚焦机构用于控制所述调焦机构出射的激光聚焦地入射到所述去膜腔室中的掩模基板表面上或掩模基板上的膜层表面上，实现对所述掩模基板的激光扫描。Optionally, the laser surface treatment device includes a first beam expansion mechanism, a focusing mechanism and a first scanning focus mechanism; the first beam expansion mechanism is used to convert the received beam light of the first laser or the second laser into The output after the shift is increased; the focusing mechanism is used to focus the laser emitted by the beam expansion mechanism; the first scanning focusing mechanism is used to control the laser emitted by the focusing mechanism to be focused and incident on the Laser scanning of the mask substrate is implemented on the surface of the mask substrate in the film removal chamber or on the surface of the film layer on the mask substrate.
可选地，所述的制造系统还包括第一激光器、第二激光器和合束机构，所述第一激光器用于提供所述第一激光，所述第二激光器用于提供所述第二激光，所述合束机构用于分时接收所述第一激光和所述第二激光，并将所接收的激光沿同一角度出射至所述扩束机构。Optionally, the manufacturing system further includes a first laser, a second laser and a beam combining mechanism, the first laser is used to provide the first laser, the second laser is used to provide the second laser, The beam combining mechanism is used to receive the first laser and the second laser in time division, and emit the received laser to the beam expanding mechanism at the same angle.
可选地，所述检测装置用于检测所述掩膜材料层的厚度、表面平坦度以及所述空白掩模版的透射率和反射率中的至少一种性能指标是否达到目标。Optionally, the detection device is used to detect whether at least one performance index of the thickness of the mask material layer, surface flatness, and transmittance and reflectivity of the blank mask reaches the target.
可选地，所述的制造系统还包括第一过渡腔室、机械手传送装置和第二过渡腔室，所述第一过渡腔室设置在所述激光表面处理装置的腔室和所述沉积腔室之间，所述第二过渡腔室设置在所述沉积腔室和所述激光直写装置的腔室之间，所述机械手传送装置用于实现掩模基板在所述激光表面处理装置的腔室、所述第一过渡腔室、所述沉积腔室、所述第二过渡腔室和所述激光直写装置的腔室之间传送。Optionally, the manufacturing system further includes a first transition chamber, a robot transfer device and a second transition chamber. The first transition chamber is provided between the chamber of the laser surface treatment device and the deposition chamber. between chambers, the second transition chamber is provided between the deposition chamber and the chamber of the laser direct writing device, and the robot transfer device is used to realize the transfer of the mask substrate to the laser surface treatment device. chamber, the first transition chamber, the deposition chamber, the second transition chamber and the chamber of the laser direct writing device.
可选地，所述脉冲激光沉积装置包括第一聚光机构、沉积腔室以及设置在所述沉积腔室中的载台和靶材，所述第一聚光机构用于将相应的激光会聚地入射到所述靶材上，所述载台用于承载掩模基板。Optionally, the pulsed laser deposition device includes a first focusing mechanism, a deposition chamber, a stage and a target disposed in the deposition chamber, and the first focusing mechanism is used to focus the corresponding laser. The ground is incident on the target material, and the stage is used to carry the mask substrate.
可选地，所述脉冲激光直写装置包括沿光路依次布设的反射镜、第二扩束机构、第一合二色棱镜、第二合二色棱镜、第二扫描聚焦机构。Optionally, the pulse laser direct writing device includes a reflecting mirror, a second beam expansion mechanism, a first combined dichroic prism, a second combined dichroic prism, and a second scanning focusing mechanism arranged sequentially along the optical path.
可选地，所述脉冲激光直写装置还包括照明光源、第二聚光机构和探测器，所述照明光源用于向所述第一合二色棱镜提供照明光，第二聚光机构用于将所述第二合二色棱镜处的一部分激光会聚到探测器中。Optionally, the pulse laser direct writing device further includes an illumination light source, a second light condensing mechanism and a detector. The illumination light source is used to provide illumination light to the first combined dichroic prism. The second light condensing mechanism is used to Converging a part of the laser light at the second combined dichroic prism into the detector.
与现有技术相比，本发明的技术方案至少具有以下有益效果之一：Compared with the existing technology, the technical solution of the present invention has at least one of the following beneficial effects:
1、本发明在同一工艺机台上利用脉冲激光进行脉冲激光沉积来制造空白掩模版并进一步利用同一激光器产生的脉冲激光对空白掩模版进行激光直写，获得具有所需图案的掩模版，能够实现掩模版的自动化制造，且工艺简单，制造成本低，生产效率高，掩模版的性能稳定，良率高，工艺机台设备成本低，且集成度高。1. The present invention uses pulse laser to perform pulse laser deposition on the same process machine to manufacture a blank mask, and further uses the pulse laser generated by the same laser to perform laser direct writing on the blank mask to obtain a mask with the required pattern, which can Realize automated manufacturing of masks with simple process, low manufacturing cost, high production efficiency, stable mask performance, high yield, low cost of process machine equipment, and high integration.
2、在制造空白掩模版的过程中，经过脉冲激光沉积(PLD)、检测、激光表面处理(激光去膜或者先激光去膜后激光抛光)这些步骤的循环执行，能够通过自动化地手段保证最终形成的空白掩模版的性能达到目标，从而提高了掩模版的制造良率。2. In the process of manufacturing blank masks, through the cyclic execution of pulse laser deposition (PLD), detection, and laser surface treatment (laser removal or laser removal first and then laser polishing), the final mask can be ensured through automated means. The performance of the formed blank mask reaches the target, thereby improving the manufacturing yield of the mask.
3、通过对待废弃的掩模版进行激光表面处理，从而回收其中的掩模基板，并基于回收的掩模基板来制造空白掩模版及掩模版，能够降低掩模版的制造成本。3. By performing laser surface treatment on the discarded masks, recycling the mask substrates, and manufacturing blank masks and mask plates based on the recycled mask substrates, the manufacturing cost of the masks can be reduced.
4、在检测到空白掩模版的性能未达标时，还调整脉冲激光沉积工艺的参数，以基于调整后的参数对激光表面处理后的空白掩模版再次执行相应的脉冲激光沉积工艺，脉冲激光沉积工艺的靶材利用率高，且可以提高空白掩模版的制造效率，进而能够提高掩模版的整体制造效率。4. When it is detected that the performance of the blank mask is not up to standard, the parameters of the pulse laser deposition process are also adjusted to perform the corresponding pulse laser deposition process again on the blank mask after laser surface treatment based on the adjusted parameters. Pulse laser deposition The target utilization rate of the process is high, and the manufacturing efficiency of the blank mask can be improved, thereby improving the overall manufacturing efficiency of the mask.
5、从废弃掩模版的回收再生至新的空白掩模版的制造，再到掩模版的图案生成，整个过程中均通过激光工艺来实现，不需要使用湿法工艺的介入，因此能解决了现有掩模基板的再生方法及空白掩模版的制造方法中存在的费用较高、工艺时间较长及湿法工艺带来的环境污染等问题。5. From the recycling of discarded masks to the manufacturing of new blank masks, and then to the pattern generation of the masks, the entire process is realized through the laser process, without the intervention of wet processes, so it can solve the current problem. The mask substrate regeneration method and the blank mask manufacturing method have problems such as high cost, long process time, and environmental pollution caused by the wet process.
附图说明Description of the drawings
本领域的普通技术人员将会理解，提供的附图用于更好地理解本发明，而不对本发明的范围构成任何限定。其中：Those of ordinary skill in the art will understand that the drawings are provided for a better understanding of the invention and do not constitute any limitation on the scope of the invention. in:
图1是本发明第一实施例的掩模版的制造方法流程图。FIG. 1 is a flow chart of a mask manufacturing method according to the first embodiment of the present invention.
图2是本发明第一实施例的掩模版的制造方法中的剖面结构示意图。FIG. 2 is a schematic cross-sectional structural diagram of the mask manufacturing method according to the first embodiment of the present invention.
图3是本发明第二实施例的掩模版的制造方法中制造的另一种掩模版的剖面结构示意图。FIG. 3 is a schematic cross-sectional structural diagram of another mask produced in the mask manufacturing method according to the second embodiment of the present invention.
图4是本发明第一实施例的掩模版的制造系统的架构示意图。FIG. 4 is a schematic structural diagram of a mask manufacturing system according to the first embodiment of the present invention.
图5是本发明第一实施例的掩模版的制造系统的具体结构示意图。FIG. 5 is a schematic structural diagram of a mask manufacturing system according to the first embodiment of the present invention.
图6是本发明第二实施例的掩模版的制造方法流程图。FIG. 6 is a flow chart of a mask manufacturing method according to the second embodiment of the present invention.
图7是本发明第二实施例的掩模版的制造系统的架构示意图。FIG. 7 is a schematic structural diagram of a mask manufacturing system according to the second embodiment of the present invention.
图8至图10是本发明第二实施例的掩模版的制造系统的具体结构示意图。8 to 10 are specific structural schematic diagrams of a mask manufacturing system according to the second embodiment of the present invention.
图11是本发明第三实施例的掩模版的制造方法流程图。FIG. 11 is a flow chart of a mask manufacturing method according to the third embodiment of the present invention.
图12是本发明第三实施例的掩模版的制造方法在步骤S0和步骤S13采用基本相同的工艺时的简化流程图。FIG. 12 is a simplified flow chart of the mask manufacturing method according to the third embodiment of the present invention when step S0 and step S13 adopt basically the same process.
其中各附图中的附图标记具体如下：The reference signs in each drawing are as follows:
101-掩模基板；102-相移膜；103-背减反膜；104-遮光膜；05-减反膜；106-掩膜材料层；107-所需图案；101-mask substrate; 102-phase shift film; 103-back anti-reflection film; 104-shielding film; 05-anti-reflection film; 106-mask material layer; 107-required pattern;
200-脉冲激光沉积装置；201-激光表面处理装置；202-系统总控制装置；203-检测装置；204-脉冲激光直写装置；200-Pulse laser deposition device; 201-Laser surface treatment device; 202-System overall control device; 203-Detection device; 204-Pulse laser direct writing device;
1、41-激光器；2-快门；3-四分之一波片；4-起偏器；5-第一分束器；6-第一扩束机构；7a-调焦机构；7b-第一扫描聚焦机构；8-激光控制机构；9、18-透光窗口；10-样品；11-激光表面处理腔室；12-第一过渡腔室；12a、50a-机械手传送装置；14-载台；15-靶材；16-第二分束器；17-第一聚光机构；19-沉积腔室；1. 41-laser; 2-shutter; 3-quarter wave plate; 4-polarizer; 5-first beam splitter; 6-first beam expansion mechanism; 7a-focusing mechanism; 7b-th A scanning focusing mechanism; 8-laser control mechanism; 9, 18-light transmission window; 10-sample; 11-laser surface treatment chamber; 12-first transition chamber; 12a, 50a-manipulator transmission device; 14-carrier Stage; 15-target material; 16-second beam splitter; 17-first focusing mechanism; 19-deposition chamber;
20-反射镜；21-第二扩束机构；22-照明光源；23-第一合二色棱镜；24-第二合二色棱镜；25-第二扫描聚焦机构；26-第二聚光机构；27-探测器；28-承载台；29-激光直写腔室；20-Reflector; 21-Second beam expansion mechanism; 22-Illumination source; 23-First combined dichromatic prism; 24-Second combined dichromatic prism; 25-Second scanning focusing mechanism; 26-Second light gathering Mechanism; 27-detector; 28-bearing platform; 29-laser direct writing chamber;
30-表面形貌检测单元；31-信号处理器；32-信号接收器；33-扫描光源；34-扫描驱动悬臂；35-探针；40-合束机构；42、43-反射镜；50-第二过渡腔室。30-Surface topography detection unit; 31-Signal processor; 32-Signal receiver; 33-Scanning light source; 34-Scanning drive cantilever; 35-Probe; 40-Beam combining mechanism; 42, 43-Reflector; 50 -Second transition chamber.
具体实施方式Detailed ways
在下文的描述中，给出了大量具体的细节以便提供对本发明更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本发明可以无需一个或多个这些细节而得以实施。在其他的例子中，为了避免与本发明发生混淆，对于本领域公知的一些技术特征未进行描述。应当理解的是，本发明能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本发明的范围完全地传递给本领域技术人员。自始至终相同附图标记表示相同的元件。应当明白，当元件被称为"连接到"、“耦接”其它元件时，其可以直接地连接其它元件，或者可以存在居间的元件。相反，当元件被称为"直接连接到"其它元件时，则不存在居间的元件。在此使用时，单数形式的"一"、"一个"和"所述/该"也意图包括复数形式，除非上下文清楚的指出另外的方式。还应明白术语“包括”用于确定可以特征、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语"和/或"包括相关所列项目的任何及所有组合。In the following description, numerous specific details are given in order to provide a more thorough understanding of the invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features that are well known in the art are not described in order to avoid confusion with the present invention. It will be understood that the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numbers refer to the same elements throughout. It will be understood that when an element is referred to as being "connected to" or "coupled" to other elements, it can be directly connected to the other elements or intervening elements may be present. In contrast, when an element is said to be "directly connected" to another element, there are no intervening elements present. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term "comprising" is used to identify the presence of possible features, steps, operations, elements and/or components, but does not exclude the presence of one or more other features, steps, operations, elements, components and/or groups or Add to. When used herein, the term "and/or" includes any and all combinations of the associated listed items.
以下结合附图和具体实施例对本发明提出的技术方案作进一步详细说明。根据下面说明，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。The technical solution proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.
第一实施例First embodiment
请参考图1，本发明一实施例提供一种掩模版的制造方法，其包括以下步骤：Please refer to Figure 1. An embodiment of the present invention provides a method for manufacturing a mask, which includes the following steps:
S1，在一工艺机台上利用脉冲激光在掩模基板上进行脉冲激光沉积，以在所述掩模基板上形成所需的掩膜材料层，得到空白掩模版；S1. Use a pulse laser to perform pulse laser deposition on the mask substrate on a process machine to form the required mask material layer on the mask substrate to obtain a blank mask;
S2，在所述工艺机台上进一步采用所述脉冲激光对所述掩膜材料层进行激光直写，以在所述掩膜材料层中形成所需图案，得到掩模版。S2, further use the pulse laser to perform laser direct writing on the mask material layer on the process machine to form the required pattern in the mask material layer to obtain a mask.
请结合图2中的(A)，在步骤S1中，首先，提供相应的掩模基板101到工艺机台上，该掩模基板101可以是任意合适的表面洁净、平坦的基板，例如石英基板、碱石灰基板和硼硅酸盐基板中的任意一种。接着，请结合图2中的(B)和(C)以及图5，在该工艺机台上利用一激光器产生脉冲激光，进而在掩模基板101上进行相应材料的脉冲激光沉积(Pulsed LaserDeposition，PLD)，形成所需厚度和材质的掩膜材料层106。由此得到所需的空白掩模版。Please refer to (A) in Figure 2. In step S1, first, provide the corresponding mask substrate 101 to the process machine. The mask substrate 101 can be any suitable substrate with a clean and flat surface, such as a quartz substrate. , any one of soda lime substrate and borosilicate substrate. Next, please combine (B) and (C) in Figure 2 and Figure 5 to use a laser to generate pulsed laser on the process machine, and then perform pulsed laser deposition (Pulsed LaserDeposition) of the corresponding material on the mask substrate 101. PLD) to form a mask material layer 106 of required thickness and material. The required blank mask is thus obtained.
其中，请结合图2中的(B)和(C)以及图5，脉冲激光沉积的具体原理是：脉冲激光经过凸透镜等第一聚光机构17传输和聚焦后打到沉积腔室19的靶材15上，然后在脉冲激光作用下靶材15表面产生等离子体，等离子体定向局域膨胀发射并在样品10(即图2中的掩模基板101或者掩模基板101及其上方的掩膜材料层106组成的空白掩模版)上沉积形成薄膜(即新沉积的掩膜材料层)106。本步骤中，根据靶材15和工艺参数的设置，沉积的掩膜材料层106可以是金属等单层膜结构，也可以是多层不同材料膜堆叠而成的结构。该脉冲激光可以根据需要沉积的掩膜材料层的吸光特性来选择，例如红宝石光激光、CO2激光、紫外激光、Nd玻璃激光或准分子激光等等任意合适的激光。另外，该脉冲激光的脉冲宽度可以飞秒级或皮秒级或纳秒级或微妙级等任意合适级别，相应地，该脉冲激光可以称为飞秒激光或皮秒激光或纳秒激光或微妙激光等。Among them, please combine (B) and (C) in Figure 2 and Figure 5. The specific principle of pulse laser deposition is: the pulse laser is transmitted and focused through the first focusing mechanism 17 such as a convex lens and then hits the target of the deposition chamber 19. On the material 15, plasma is then generated on the surface of the target 15 under the action of the pulse laser. The plasma expands in a directional and localized manner and is emitted on the sample 10 (i.e., the mask substrate 101 in Figure 2 or the mask substrate 101 and the mask above it). A thin film (ie, a newly deposited mask material layer) 106 is deposited on a blank mask composed of the material layer 106. In this step, according to the settings of the target 15 and process parameters, the deposited mask material layer 106 may be a single-layer film structure such as metal, or may be a structure formed by stacking multiple layers of films of different materials. The pulse laser can be selected according to the light absorption characteristics of the mask material layer that needs to be deposited, such as ruby laser, CO2 laser, ultraviolet laser, Nd glass laser or excimer laser, and any suitable laser. In addition, the pulse width of the pulse laser can be at any appropriate level such as femtosecond level, picosecond level, nanosecond level, or microsecond level. Correspondingly, the pulse laser can be called femtosecond laser, picosecond laser, nanosecond laser, or microsecond laser. Laser etc.
由于本步骤中采用脉冲激光沉积工艺沉积掩膜材料层106，会具有以下优点：a.易获得期望化学计量比的多组分薄膜，即具有良好的保成分性；b.沉积速率高，工艺周期短，对掩模基板101的温度要求低，制备的薄膜均匀；c.工艺参数任意调节，对靶材的种类没有限制；d.便于清洁处理，可以制备多种薄膜材料；e.反应迅速，生长快，通常情况下一小时可获1μm左右的薄膜，能够提高靶材的利用率。Since the pulse laser deposition process is used to deposit the mask material layer 106 in this step, it will have the following advantages: a. It is easy to obtain a multi-component film with a desired stoichiometric ratio, that is, it has good composition retention; b. The deposition rate is high and the process is The cycle is short, the temperature requirement of the mask substrate 101 is low, and the prepared thin film is uniform; c. The process parameters can be adjusted arbitrarily, and there is no limit on the type of target material; d. It is easy to clean and process, and a variety of thin film materials can be prepared; e. The response is rapid , grows quickly, and usually a film of about 1 μm can be obtained in one hour, which can improve the utilization of the target material.
作为一种示例，请进一步结合图2中的(B)，本步骤中采用脉冲激光沉积工艺沉积形成的掩膜材料层106包括自下而上依次层叠在掩模基板101上的背减反膜103、遮光膜104和减反膜105，其中背减反膜103、遮光膜104和减反膜105均是基于同一靶材形成的，区别在于沉积背减反膜103、遮光膜104和减反膜105的过程中通入的反应气体不同，例如背减反膜103、遮光膜104和减反膜105均是基于Cr靶材形成的，在沉积遮光膜104的过程中通入N2，形成CrN作为遮光膜104，在沉积背减反膜103和减反膜105的过程中通入N2、O2、CO或CO2等中的至少一种，从而形成包括CrO、CrON及CrCON中的至少一种作为背减反膜103和减反膜105。As an example, please further refer to (B) in FIG. 2 . In this step, the mask material layer 106 deposited using a pulse laser deposition process includes a back anti-reflection film sequentially stacked on the mask substrate 101 from bottom to top. 103. Light-shielding film 104 and anti-reflection film 105. The back anti-reflection film 103, light-shielding film 104 and anti-reflection film 105 are all formed based on the same target material. The difference lies in the deposition of back anti-reflection film 103, light-shielding film 104 and anti-reflection film. The reaction gases introduced during the process of depositing the film 105 are different. For example, the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 are all formed based on Cr targets. N2 is introduced during the deposition of the light-shielding film 104 to form CrN serves as the light-shielding film 104. During the deposition of the back anti-reflection film 103 and the anti-reflection film 105, at least one of N2 , O2 , CO or CO2 is introduced, thereby forming CrO, CrON and CrCON. At least one serves as the back anti-reflection film 103 and the anti-reflection film 105 .
作为另一种示例，请进一步结合图3，步骤中采用脉冲激光沉积工艺沉积形成的掩膜材料层106包括自下而上依次层叠在掩模基板101上的相移膜102、背减反膜103、遮光膜104和减反膜105。其中，相移膜102的材料可以包括Cr(铬)的化合物(例如铬氧化物、铬氮化物或铬氧氮化物等)、MoSi、MoSi化合物(例如MoSiON、MoSiCON、MoSiN、MoSiCN或MoSiCO等)中的至少一种。As another example, please further refer to FIG. 3. The mask material layer 106 deposited using a pulsed laser deposition process includes a phase shift film 102 and a back anti-reflection film sequentially stacked on the mask substrate 101 from bottom to top. 103. Light-shielding film 104 and anti-reflection film 105. The material of the phase shift film 102 may include Cr (chromium) compounds (such as chromium oxide, chromium nitride or chromium oxynitride, etc.), MoSi, MoSi compounds (such as MoSiON, MoSiCON, MoSiN, MoSiCN or MoSiCO, etc.) at least one of them.
请结合图2中的(C)，在步骤S2中，在同一工艺机台上并采用步骤S1中所使用的同一激光器产生的脉冲激光对掩膜材料层106进行激光直写。Please refer to (C) in FIG. 2 . In step S2 , laser direct writing is performed on the mask material layer 106 on the same process machine and using the pulse laser generated by the same laser used in step S1 .
其中，本步骤中激光直写的具体原理是：相应的脉冲激光经过反射镜、凸透镜等光学元件传输和聚焦后打到腔室29的样品10上，通过控制该脉冲激光在掩膜材料层106上沿着特定路径行进和停留，就可以让该脉冲激光直接烧蚀特定位置的掩膜材料层106，从而在掩膜材料层106中形成所需图案107，由此得到掩模版。Among them, the specific principle of laser direct writing in this step is: the corresponding pulse laser is transmitted and focused through optical elements such as mirrors and convex lenses, and then hits the sample 10 in the chamber 29. By controlling the pulse laser, the pulse laser is transmitted on the mask material layer 106 By traveling and staying along a specific path, the pulsed laser can directly ablate the mask material layer 106 at a specific location, thereby forming the required pattern 107 in the mask material layer 106, thereby obtaining a mask.
本步骤中，通过激光直写在掩膜材料层106中形成所需图案107，可以省略现有技术中从空白掩模版到掩模版所需的涂胶、曝光、显影、刻蚀和去胶等工序，能够简化工艺，提高效率，降低成本。In this step, the required pattern 107 is formed in the mask material layer 106 by laser direct writing, which can omit the glue coating, exposure, development, etching, and glue removal required in the prior art from a blank mask to a mask. The process can simplify the process, improve efficiency and reduce costs.
应当理解的是，本实施例中选用的脉冲激光的脉冲宽度、波长、功率等参数可以是固定的，能够同时满足脉冲激光沉积和激光直写两种工艺的需求，也可以是可调的，随着脉冲激光沉积和激光直写两种工艺的先后进行而进行适应性调整。It should be understood that the pulse width, wavelength, power and other parameters of the pulse laser selected in this embodiment can be fixed to meet the needs of both pulse laser deposition and laser direct writing processes, or they can be adjustable. Adaptive adjustments are made as the two processes of pulsed laser deposition and laser direct writing are carried out one after another.
例如，当掩膜材料层106是多层不同材质的膜层堆叠而成时，可以根据该膜层与掩模基板101表面的距离及该膜层的材料特性，设置脉冲激光沉积过程中的脉冲激光的参数，不同膜层沉积时的脉冲激光的至少一个参数不同。进一步可以根据该膜层与掩模基板101表面的距离及该膜层的材料特性，设置激光直写过程中的脉冲激光的参数，不同膜层的激光直写时的脉冲激光的至少一个参数不同。作为一种示例，随着激光直写的深度增大，脉冲激光的功率越来越低，扫描步长越来越小，由此可以在激光直写前期快速加深烧蚀深度，以提高激光直写效率，在激光直写后期缓慢加深烧蚀深度，以保护掩模基板101不受损伤。For example, when the mask material layer 106 is a stack of multiple film layers of different materials, the pulses during the pulse laser deposition process can be set according to the distance between the film layer and the surface of the mask substrate 101 and the material properties of the film layer. As for the parameters of the laser, at least one parameter of the pulsed laser during deposition of different film layers is different. Further, the parameters of the pulse laser during laser direct writing can be set according to the distance between the film layer and the surface of the mask substrate 101 and the material characteristics of the film layer. At least one parameter of the pulse laser during laser direct writing for different film layers is different. . As an example, as the depth of laser direct writing increases, the power of the pulse laser becomes lower and lower, and the scanning step size becomes smaller and smaller. This allows the ablation depth to be quickly deepened in the early stage of laser direct writing to improve laser direct writing. To improve the writing efficiency, the ablation depth is slowly deepened in the later stage of laser direct writing to protect the mask substrate 101 from damage.
其中，在激光直写过程中，该脉冲激光需要满足以下需求：(1)脉冲宽度能够足够小，在当脉冲激光与掩膜材料层106发生烧蚀作用时，可以忽略流体动力过程带来的影响，脉冲激光的加工能量更集中，使得达到掩膜材料层106的烧蚀阈值所需的能量更低，进而大大降低激光直写的能量损耗；(2)脉冲激光作用于掩膜材料层106上的时间极短，激光直写过程中的热传导效应和热扩散效应不明显，改善和消除因热传导效应和热扩散效应而引起周边材料的不必要损伤和破坏的现象，进而保证激光直写的加工精度；(3)激光脉冲的作用时间极短，脉冲激光的峰值强度极高，且掩膜材料层106中多层堆叠的膜层对该脉冲激光的能量是非线性吸收的，在对掩膜材料层106进行激光直写时，可以突破衍射极限，达到掩膜材料层106中的底层或者次底层膜层的烧蚀阈值，从而深入到掩膜材料层106中的底层或者次底层膜层中进行烧蚀，实现精细加工；(4)激光直写的过程中，该脉冲激光对掩膜材料层106中各膜层的去除主要以直接的汽化方式进行，且该脉冲激光带来的材料融化、流动和再次凝固成型等影响尽可能少，从而保证激光直写的图案精度。Among them, during the laser direct writing process, the pulse laser needs to meet the following requirements: (1) The pulse width can be small enough, and when the ablation effect between the pulse laser and the mask material layer 106 occurs, the impact caused by the hydrodynamic process can be ignored Influence, the processing energy of the pulse laser is more concentrated, so that the energy required to reach the ablation threshold of the mask material layer 106 is lower, thereby greatly reducing the energy loss of laser direct writing; (2) The pulse laser acts on the mask material layer 106 The time is extremely short, and the thermal conduction effect and thermal diffusion effect during the laser direct writing process are not obvious. This improves and eliminates the unnecessary damage and destruction of surrounding materials caused by the thermal conduction effect and thermal diffusion effect, thereby ensuring the accuracy of laser direct writing. Processing accuracy; (3) The action time of the laser pulse is extremely short, the peak intensity of the pulse laser is extremely high, and the multi-layer stacked film layers in the mask material layer 106 nonlinearly absorb the energy of the pulse laser. When the material layer 106 is directly written with laser, it can break through the diffraction limit and reach the ablation threshold of the bottom layer or the sub-bottom layer in the mask material layer 106 , thereby penetrating deeply into the bottom layer or the sub-bottom layer in the mask material layer 106 Ablation is performed to achieve fine processing; (4) During the process of laser direct writing, the pulse laser removes each film layer in the mask material layer 106 mainly by direct vaporization, and the material caused by the pulse laser melts The influence of flow, flow and re-solidification is as small as possible, thereby ensuring the pattern accuracy of laser direct writing.
可选地，所述脉冲激光为飞秒激光，其脉冲宽度只有几千万亿分之一秒，能量高。Optionally, the pulsed laser is a femtosecond laser with a pulse width of only a few quadrillionths of a second and high energy.
应当理解的是，本实施例的掩模版的制造方法，可以采用本领域中任意合适的工艺机台系统来实现，但是优选地采用本发明的掩模版的制造系统来实现。It should be understood that the mask manufacturing method of this embodiment can be implemented using any suitable process machine system in the field, but it is preferably implemented using the mask manufacturing system of the present invention.
请参考图4，本实施例提供的掩模版的制造系统，其包括集成在同一工艺机台上的脉冲激光沉积装置200、脉冲激光直写装置204及系统总控制装置202。Please refer to FIG. 4 . This embodiment provides a mask manufacturing system, which includes a pulse laser deposition device 200 , a pulse laser direct writing device 204 and a system overall control device 202 integrated on the same process machine.
其中，请结合图2，脉冲激光沉积装置200用于利用所述工艺机台上的脉冲激光，在掩模基板101上进行脉冲激光沉积，以在所述掩模基板101上形成所需的掩膜材料层106，得到空白掩模版。脉冲激光直写装置204用于在所述工艺机台上进一步采用所述脉冲激光，对所述掩膜材料层106进行激光直写，以在所述掩膜材料层106中形成所需图案107，得到掩模版。系统总控制装置202耦接脉冲激光沉积装置200和脉冲激光直写装置204，用于控制脉冲激光沉积装置200和脉冲激光直写装置204协调工作。2, the pulse laser deposition device 200 is used to use the pulse laser on the process machine to perform pulse laser deposition on the mask substrate 101 to form the required mask on the mask substrate 101. Film material layer 106 to obtain a blank mask. The pulse laser direct writing device 204 is used to further use the pulse laser on the process machine to perform laser direct writing on the mask material layer 106 to form the required pattern 107 in the mask material layer 106 , get the mask. The overall system control device 202 is coupled to the pulse laser deposition device 200 and the pulse laser direct writing device 204, and is used to control the pulse laser deposition device 200 and the pulse laser direct writing device 204 to work in a coordinated manner.
值得注意的是，系统总控制装置202、脉冲激光沉积装置200和脉冲激光直写装置204中的任意一个装置可以被拆分成多个模块，或者，这些装置中的一个或多个装置的至少部分功能可以与其他装置的至少部分功能相结合，并在一个模块中实现。另外，系统总控制装置202、脉冲激光沉积装置200和脉冲激光直写装置204中的至少一个可以至少被部分地实现为硬件电路，例如现场可编程门阵列(FPGA)、可编程逻辑阵列(PLA)、片上系统、基板上的系统、封装上的系统、专用集成电路(ASIC)，或可以以对电路进行集成或封装的任何其他的合理方式等硬件或固件来实现，或以软件、硬件以及固件三种实现方式的适当组合来实现。或者，系统总控制装置202、脉冲激光沉积装置200和脉冲激光直写装置204中的至少一个可以至少被部分地实现为计算机程序模块，当该程序被计算机运行时，可以执行相应模块的功能。It is worth noting that any one of the system overall control device 202, the pulse laser deposition device 200 and the pulse laser direct writing device 204 can be split into multiple modules, or at least one or more of these devices can Part of the functionality can be combined with at least part of the functionality of other devices and implemented in one module. In addition, at least one of the system overall control device 202, the pulse laser deposition device 200, and the pulse laser direct writing device 204 may be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA) ), system on a chip, system on a substrate, system on a package, application specific integrated circuit (ASIC), or may be implemented in hardware or firmware in any other reasonable way to integrate or package circuits, or in software, hardware and This is achieved by an appropriate combination of the three firmware implementation methods. Alternatively, at least one of the system overall control device 202, the pulse laser deposition device 200, and the pulse laser direct writing device 204 can be at least partially implemented as a computer program module. When the program is run by the computer, the functions of the corresponding modules can be performed.
作为一种示例，请参考图5，脉冲激光沉积装置200包括第一聚光机构17、具有透光窗口18的沉积腔室19以及设置在所述沉积腔室19中的载台14和靶材15。脉冲激光直写装置204包括激光直写腔室29及设置沿光路依次布设在激光直写腔室29中的反射镜20、第二扩束机构21、第一合二色棱镜23、第二合二色棱镜24、第二扫描聚焦机构25。As an example, please refer to FIG. 5 . The pulsed laser deposition device 200 includes a first light condensing mechanism 17 , a deposition chamber 19 with a light-transmitting window 18 , and a stage 14 and a target disposed in the deposition chamber 19 . 15. The pulsed laser direct writing device 204 includes a laser direct writing chamber 29 and a reflector 20 arranged sequentially along the optical path in the laser direct writing chamber 29 , a second beam expansion mechanism 21 , a first combined dichroic prism 23 , a second combined dichroic prism 23 Dichroic prism 24, second scanning focusing mechanism 25.
本示例的制造系统除了包括系统总控制装置202、脉冲激光沉积装置200和脉冲激光直写装置204之外，还包括集成在该工艺机台上且沿光路依次布设的激光器1、快门2、四分之一波片3、起偏器4、第二分束器16。另外还包括集成在该工艺机台上的第二过渡腔室50和机械手传送装置50a。In addition to the overall system control device 202, the pulse laser deposition device 200, and the pulse laser direct writing device 204, the manufacturing system in this example also includes a laser 1, a shutter 2, Half wave plate 3, polarizer 4, second beam splitter 16. In addition, a second transition chamber 50 and a robot transfer device 50a integrated on the process machine are included.
进一步可选地，脉冲激光直写装置204还包括布设在激光直写腔室29中的照明光源22、第二聚光机构26和探测器27。Further optionally, the pulsed laser direct writing device 204 also includes an illumination light source 22 , a second focusing mechanism 26 and a detector 27 arranged in the laser direct writing chamber 29 .
应当理解的是，在一些示例中，脉冲激光沉积装置200和脉冲激光直写装置204可以先后工作，从而可以对同一样品10先进行脉冲激光沉积，后进行激光直写，这种情况下，脉冲激光沉积装置200和脉冲激光直写装置204中可以设置相应的快门等电控部件，从而控制其各自腔室内的脉冲激光的开启和关闭。在另一些示例中，脉冲激光沉积装置200和脉冲激光直写装置204也可以同时工作，从而脉冲激光沉积装置200对一样品10进行脉冲激光沉积，脉冲激光直写装置204对另一样品10(该样品完成了脉冲激光沉积)进行激光直写。It should be understood that in some examples, the pulse laser deposition device 200 and the pulse laser direct writing device 204 can work sequentially, so that the same sample 10 can be subjected to pulse laser deposition first and then laser direct writing. In this case, pulse laser deposition The laser deposition device 200 and the pulse laser direct writing device 204 can be provided with corresponding electronic control components such as shutters to control the turning on and off of the pulse laser in their respective chambers. In other examples, the pulse laser deposition device 200 and the pulse laser direct writing device 204 can also work at the same time, so that the pulse laser deposition device 200 performs pulse laser deposition on one sample 10, and the pulse laser direct writing device 204 performs pulse laser deposition on another sample 10 ( This sample completed pulsed laser deposition) and underwent laser direct writing.
其中，激光器1用于产生脉冲激光，该激光器1可以是红宝石光激光器、CO2激光器、紫外激光器、Nd玻璃激光器或准分子激光器等等任意合适的激光器，其产生的脉冲激光的脉冲宽度(简称脉宽)可以是飞秒级或皮秒级或微妙级或纳秒级等等任意合适级别。激光器1可以是电控部件，耦接系统总控制装置202，从而在激光器1可以根据系统总控制装置202的控制指令或调节指令来控制和调节所产生的脉冲激光的波长、脉宽和功率。Among them, the laser 1 is used to generate pulse laser. The laser 1 can be any suitable laser such as a ruby optical laser, a CO2 laser, an ultraviolet laser, an Nd glass laser or an excimer laser. The pulse width of the pulse laser it generates (referred to as The pulse width) can be any suitable level such as femtosecond level or picosecond level or microsecond level or nanosecond level. The laser 1 may be an electronically controlled component coupled to the system overall control device 202, so that the laser 1 can control and adjust the wavelength, pulse width and power of the generated pulse laser according to the control instructions or adjustment instructions of the system overall control device 202.
激光器1产生的脉冲激光依次通过快门2、四分之一波片3和起偏器4、第二分束器16中。快门2可由系统总控制装置202通过控制高低电平信号实现通断，从而控制脉冲激光的开启和关闭。第二分束器16将接收的激光分成两路，一路经第一聚光机构17、透光窗口18照射到沉积腔室19中的靶材15上，另一路经反射镜20、第二扩束机构21、第一合二色棱镜23、第二合二色棱镜24、第二扫描聚焦机构25照射到激光直写装置204的激光直写腔室29中的承载台28所承载的样品10上。The pulse laser generated by the laser 1 passes through the shutter 2, the quarter wave plate 3, the polarizer 4, and the second beam splitter 16 in sequence. The shutter 2 can be turned on and off by the system overall control device 202 by controlling high and low level signals, thereby controlling the turning on and off of the pulse laser. The second beam splitter 16 divides the received laser into two paths. One path passes through the first light condensing mechanism 17 and the light-transmitting window 18 to illuminate the target 15 in the deposition chamber 19 , and the other path passes through the reflecting mirror 20 and the second amplifier. The beam mechanism 21, the first combined dichroic prism 23, the second combined dichroic prism 24, and the second scanning focusing mechanism 25 irradiate the sample 10 carried on the carrying platform 28 in the laser direct writing chamber 29 of the laser direct writing device 204 superior.
照明光源22产生的照明光经第一合二色棱镜23、第二合二色棱镜24、第二扫描聚焦机构25照射到承载台28所承载的样品10上，且承载台28所承载的样品10表面反射的照明光经第二扫描聚焦机构25、第二合二色棱镜24、第二聚光机构26汇聚到探测器27中，由此探测器27可以实时获取激光直写的图像效果，并将相应的数据反馈至系统总控制装置202，从而可以让系统总控制装置202调整和优化激光直写装置204的工艺参数和扫描路径等，保证激光直写的最终效果。The illumination light generated by the illumination light source 22 is illuminated on the sample 10 carried by the carrying platform 28 through the first combined dichroic prism 23, the second combined dichroic prism 24, and the second scanning focusing mechanism 25, and the sample carried by the carrying platform 28 10 The illumination light reflected on the surface is concentrated into the detector 27 through the second scanning focusing mechanism 25, the second dichroic prism 24, and the second condensing mechanism 26, so that the detector 27 can obtain the image effect of laser direct writing in real time. And the corresponding data is fed back to the system general control device 202, so that the system general control device 202 can adjust and optimize the process parameters and scanning paths of the laser direct writing device 204 to ensure the final effect of laser direct writing.
第二扩束机构21主要用于对反射镜20所反射的脉冲激光的光束直径进行扩展，并减小该脉冲激光的光束的发射角。The second beam expansion mechanism 21 is mainly used to expand the beam diameter of the pulse laser reflected by the mirror 20 and reduce the emission angle of the pulse laser beam.
与省略第二扩束机构21的情况相比，有第二扩束机构21的情况下，反射镜20所反射的脉冲激光的光束可使得被第二扫描聚焦机构25聚焦到样品10上的光班能量在光班范围内分布更均匀。Compared with the case where the second beam expansion mechanism 21 is omitted, in the case where the second beam expansion mechanism 21 is present, the pulse laser beam reflected by the mirror 20 can make the light focused on the sample 10 by the second scanning focusing mechanism 25 The class energy is more evenly distributed within the light class range.
本实施例中，激光器1输出的脉冲激光的光束直径和发散角的乘积是光学不变量，近似为一定值。当第二扩束机构21将反射镜26反射的脉冲激光的光束直径扩大x倍时，其发散角相应压缩为原来的1/x。总结而言，在该光路上设置第二扩束机构21，可以降低对该光路上的其他光学元件的要求，且使得聚焦到样品10上的光班能量在光班范围内分布更均匀，进而提高脉冲激光能量利用效果的目的。可选地，第二扩束机构21可以是电控部件，其可以根据系统总控制装置202的控制指令或调节指令来调节和控制其扩束比。In this embodiment, the product of the beam diameter and the divergence angle of the pulsed laser output by the laser 1 is an optical invariant, which is approximately a certain value. When the second beam expansion mechanism 21 expands the beam diameter of the pulse laser reflected by the mirror 26 by x times, its divergence angle is correspondingly compressed to 1/x of the original value. In summary, arranging the second beam expansion mechanism 21 on the optical path can reduce the requirements for other optical components on the optical path, and make the optical beam energy focused on the sample 10 more evenly distributed within the optical beam range, and thus The purpose of improving the utilization effect of pulse laser energy. Alternatively, the second beam expansion mechanism 21 may be an electronic control component, which may adjust and control its beam expansion ratio according to the control instructions or adjustment instructions of the system overall control device 202 .
可选地，第二扩束机构21可以是激光扩束准直镜。Alternatively, the second beam expansion mechanism 21 may be a laser beam expansion collimator.
第二扫描聚焦机构25用于控制脉冲激光的焦距和焦面等激光参数及实现扫描路径等扫描参数。第二扫描聚焦机构25可以包括场镜，其又称平场聚焦镜、F-theta透镜，区别于普通球面镜只能在弧面上聚焦，该场镜经过特别设计，使得入射的激光束聚焦出射后，能在激光直写腔室29中的样品10表面上聚焦，其入射激光的入射角与其出射激光的位置成线性关系，且能精确地控制脉冲激光在激光直写腔室29中的样品10表面上的聚焦位置。第二扫描聚焦机构25还可以包括振镜，该振镜由两个分别连接摆动电机的反射镜组成。在电脑端设置特定的路径并将运动信号发送到系统总控制装置202，系统总控制装置202通过控制电机来控制反射镜的转动，使脉冲激光在激光直写腔室29中的样品10的表面按照特定的路径摆动，配合激光直写腔室29中用于承载样品10的承载台28的运动，从而对激光直写腔室29中的样品10的表面进行扫描，实现超快串行的激光直写。The second scanning focusing mechanism 25 is used to control laser parameters such as the focal length and focal plane of the pulse laser and realize scanning parameters such as scanning paths. The second scanning focusing mechanism 25 may include a field lens, which is also called a flat field focusing lens or an F-theta lens. Different from ordinary spherical mirrors that can only focus on a curved surface, the field lens is specially designed to focus the incident laser beam and emit it. Finally, it can be focused on the surface of the sample 10 in the laser direct writing chamber 29, and the incident angle of the incident laser is linearly related to the position of the outgoing laser, and the pulse laser can be accurately controlled on the sample in the laser direct writing chamber 29. 10 Focus positions on the surface. The second scanning focusing mechanism 25 may also include a galvanometer, which is composed of two mirrors respectively connected to swing motors. Set a specific path on the computer side and send the motion signal to the system general control device 202. The system general control device 202 controls the rotation of the mirror by controlling the motor, so that the pulse laser directly writes on the surface of the sample 10 in the laser chamber 29. Swing according to a specific path, and cooperate with the movement of the carrying platform 28 for carrying the sample 10 in the laser direct writing chamber 29, so as to scan the surface of the sample 10 in the laser direct writing chamber 29, realizing ultra-fast serial laser Direct writing.
可选地，第二扫描聚焦机构25可以包括电控部件，其可以根据系统总控制装置202的控制指令或调节指令，来调节入射到激光直写腔室29中的样品10表面上的脉冲激光的焦距、焦面等聚焦参数以及扫描步长、扫描速度、扫描路径等扫描参数。Optionally, the second scanning focusing mechanism 25 may include an electronic control component, which may adjust the pulse laser incident on the surface of the sample 10 in the laser direct writing chamber 29 according to the control instructions or adjustment instructions of the system overall control device 202 Focus parameters such as focal length and focal plane, as well as scanning parameters such as scanning step length, scanning speed, and scanning path.
第一聚光机构17用于将第二分束器16出射的一路脉冲激光汇聚地入射到靶材15上，载台14用于承载用于制造空白掩模版的样品10。The first focusing mechanism 17 is used to converge and incident a pulse laser beam emitted from the second beam splitter 16 onto the target 15 , and the stage 14 is used to carry the sample 10 for manufacturing the blank mask.
过渡腔室50设置在沉积腔室19和激光直写腔室29之间，用于实现样品10在沉积腔室19前和激光直写腔室29前的排队等待。机械手传送装置50a用于实现样品在沉积腔室19、过渡腔室50和激光直写腔室29之间传送。The transition chamber 50 is provided between the deposition chamber 19 and the laser direct writing chamber 29 and is used to queue up the sample 10 in front of the deposition chamber 19 and the laser direct writing chamber 29 . The robot transfer device 50a is used to transfer the sample between the deposition chamber 19, the transition chamber 50 and the laser direct writing chamber 29.
此外，还应当理解的是，图5所示的具体结构仅仅只作为一种举例说明，并不表明本实施例的制造系统仅仅具有图中所示的结构，其可以进一步包括相应所需的任意合适的光学或电子元件。例如，请参考图5，在第二分束器16和第一聚光机构17之间设置反射镜，从而将第二分束器16出射的一路脉冲激光以最佳角度输送至第一聚光机构17中。In addition, it should also be understood that the specific structure shown in Figure 5 is only used as an example and does not mean that the manufacturing system of this embodiment only has the structure shown in the figure, and it can further include any corresponding required ones. Suitable optical or electronic components. For example, please refer to Figure 5, a reflecting mirror is provided between the second beam splitter 16 and the first focusing mechanism 17, so that a pulse laser beam emitted from the second beam splitter 16 is delivered to the first focusing mechanism at an optimal angle. Agency 17.
总结而言，本实施例的掩模版的制造方法及制造系统，能够在同一工艺机台上利用同一激光器产生的脉冲激光自动化地制造空白掩模版并对空白掩模版进行激光直写，形成具有所需图案的掩模版，工艺简单，制造成本低，生产效率高且掩模版的性能稳定，良率高，工艺机台设备成本低，且集成度高。In summary, the mask manufacturing method and manufacturing system of this embodiment can automatically manufacture a blank mask using the pulse laser generated by the same laser on the same process machine and perform laser direct writing on the blank mask to form a mask with the desired properties. The mask that requires a pattern has a simple process, low manufacturing cost, high production efficiency, stable performance of the mask, high yield, low cost of process machine equipment, and high integration.
第二实施例Second embodiment
请参考图6，本实施例提供一种掩模版的制造方法，其也包括以下步骤：Please refer to Figure 6. This embodiment provides a mask manufacturing method, which also includes the following steps:
S1，在一工艺机台上利用脉冲激光在掩模基板上进行脉冲激光沉积，以在所述掩模基板上形成所需的掩膜材料层，得到空白掩模版；S1. Use a pulse laser to perform pulse laser deposition on the mask substrate on a process machine to form the required mask material layer on the mask substrate to obtain a blank mask;
S2，在所述工艺机台上进一步采用所述脉冲激光对所述掩膜材料层进行激光直写，以在所述掩膜材料层中形成所需图案，得到掩模版。S2, further use the pulse laser to perform laser direct writing on the mask material layer on the process machine to form the required pattern in the mask material layer to obtain a mask.
该实施例与第一实施例的制造方法的区别在于，步骤S1包括循环执行以下子步骤:The difference between this embodiment and the manufacturing method of the first embodiment is that step S1 includes cyclically executing the following sub-steps:
S11，在工艺机台上采用所述脉冲激光，在掩模基板上进行脉冲激光沉积，以得到具有相应的掩膜材料层的空白掩模版；S11, use the pulse laser on the process machine to perform pulse laser deposition on the mask substrate to obtain a blank mask with a corresponding mask material layer;
S12，检测所述空白掩模版的性能是否达到目标；S12, detect whether the performance of the blank mask reaches the target;
S13，在检测到所述空白掩模版的性能未达标时，根据检测结果选择相应的激光表面处理方式，在所述工艺机台上对所述空白掩模版进行激光表面处理，以修整所述掩膜材料层的表面，或者去除所述掩膜材料层并修整所述掩模基板的表面。S13, when it is detected that the performance of the blank mask does not meet the standard, select the corresponding laser surface treatment method according to the detection results, and perform laser surface treatment on the blank mask on the process machine to trim the mask. The surface of the film material layer, or the mask material layer is removed and the surface of the mask substrate is trimmed.
在子步骤S11沉积掩膜材料层106之后，执行子步骤S12。在子步骤S12中，可以通过任意所需的检测手段来检测沉积的掩膜材料层106或者检测由掩膜材料层106和掩模基板101形成的空白掩模版的性能是否达到目标。例如通过扫描探针显微镜(Scanning ProbeMicroscope，SPM)等装置，在线实时检测空白掩模版的表面形貌，表面形貌的检测结果中可以包括当前的表面粗糙度或者表面平整度等信息及各个位置的高度、膜层厚度等信息。还可以通过相应的光学检测装置检测空白掩模版的透光率、反射率等光学性能指标。进一步将检测结果与对应的目标值或目标范围进行比较，判断空白掩模版当前的性能是否达到目标。After depositing the mask material layer 106 in sub-step S11, sub-step S12 is performed. In sub-step S12, any required detection means may be used to detect whether the deposited mask material layer 106 or the performance of the blank mask formed by the mask material layer 106 and the mask substrate 101 reaches the target. For example, scanning probe microscope (SPM) and other devices are used to detect the surface topography of the blank mask online in real time. The detection results of the surface topography can include the current surface roughness or surface flatness and other information as well as the information of each position. Height, film thickness and other information. Optical performance indicators such as transmittance and reflectivity of the blank mask can also be detected through corresponding optical detection devices. The detection results are further compared with the corresponding target value or target range to determine whether the current performance of the blank mask reaches the target.
一旦判定空白掩模版当前的性能未达到目标，则将空白掩模版送至子步骤S13，进行激光表面处理，修整掩膜材料层的表面，或者去除掩膜材料层并修整掩模基板的表面。在本步骤中，可以根据子步骤S12的检测结果选择合适的激光表面处理方式来对空白掩模版进行激光表面处理。其中可选地的激光表面处理方式包括以下三种方式之一：Once it is determined that the current performance of the blank mask plate has not reached the target, the blank mask plate is sent to sub-step S13 for laser surface treatment, trimming the surface of the mask material layer, or removing the mask material layer and trimming the surface of the mask substrate. In this step, an appropriate laser surface treatment method can be selected according to the detection result of sub-step S12 to perform laser surface treatment on the blank mask. Optional laser surface treatment methods include one of the following three methods:
第一种方式，采用第一激光进行激光去膜，以去除所述掩模基板上的相应厚度的膜层；The first way is to use a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate;
第二种方式，采用不同于所述第一激光的第二激光对所述掩模基板上的膜层表面进行激光抛光；In a second way, a second laser different from the first laser is used to laser polish the surface of the film layer on the mask substrate;
第三种方式，先采用所述第一激光进行激光去膜，后采用所述第二激光进行激光抛光。The third method is to first use the first laser to perform laser film removal, and then use the second laser to perform laser polishing.
其中，上述的第一激光或第二激光是脉冲激光沉积时所使用的激光器所产生的脉冲激光。即激光去膜或者激光抛光的工艺与脉冲激光沉积工艺使用同一激光器产生的脉冲激光。Wherein, the above-mentioned first laser or second laser is a pulse laser generated by a laser used in pulse laser deposition. That is, the laser film removal or laser polishing process and the pulse laser deposition process use the pulse laser generated by the same laser.
实际应用时，如果子步骤S12中检测到空白掩模版的当前的性能中主要是表面粗糙度太大，其他性能相对非常接近目标时，则在子步骤S13中可以选择采用第二激光对空白掩模版的表面进行激光抛光，使其掩膜材料层106的表面粗糙度达到目标。如果子步骤S12中检测到空白掩模版的当前的性能各方面均与目标相差太多时，则在子步骤S13中可以选择先采用第一激光对空白掩模版的表面进行激光去膜，去除掩模基板101上所有的掩膜材料层106，之后再采用第二激光对掩模基板的表面进行激光抛光，使其掩模基板的表面清洁、平坦且达到要求的程度，为接下来再次执行子步骤S11打下基础。如果子步骤S12中结合前次检测结果和本次结果分析发现，本次子步骤S11沉积的掩膜材料层导致空白掩模版的当前的性能未达到目标，则在子步骤S13中可以选择第一激光对空白掩模版的表面进行激光去膜，去除本次子步骤S11在掩模基板101上沉积的掩膜材料层106，为接下来再次执行子步骤S11打下基础。In actual application, if it is detected in sub-step S12 that the current performance of the blank mask is mainly due to the surface roughness being too large and other properties are relatively very close to the target, then in sub-step S13 you can choose to use the second laser to align the blank mask. The surface of the template is laser polished so that the surface roughness of the mask material layer 106 reaches the target. If it is detected in sub-step S12 that the current performance of the blank mask is too different from the target in all aspects, then in sub-step S13, you can choose to use the first laser to laser remove the film from the surface of the blank mask to remove the mask. All mask material layers 106 on the substrate 101 are then laser polished using a second laser to make the surface of the mask substrate clean, flat and to the required level, in order to perform the sub-steps again. S11 lays the foundation. If it is found in sub-step S12 based on the analysis of the previous detection results and this time that the mask material layer deposited in sub-step S11 this time causes the current performance of the blank mask to not reach the target, then the first step can be selected in sub-step S13. The laser removes the film from the surface of the blank mask to remove the mask material layer 106 deposited on the mask substrate 101 in this sub-step S11, laying the foundation for performing the sub-step S11 again.
进一步地，为了提高子步骤S13的激光表面处理的效率和效果，可以在激光表面处理的过程中，在线实时检测空白掩模版的表面形貌，并根据表面形貌的检测结果在线实时调整子步骤S13中的激光表面处理的工艺参数，例如调整第一激光或第二激光的波长、功率、聚焦参数(包括焦面大小、焦面与掩模基板表面的夹角大小等)等激光参数和扫描参数(例如扫描路径、扫描步长、扫描速度等)。Further, in order to improve the efficiency and effect of the laser surface treatment in sub-step S13, the surface topography of the blank mask can be detected online in real time during the laser surface treatment process, and the sub-step can be adjusted in real time online based on the detection results of the surface topography. The process parameters of laser surface treatment in S13, such as adjusting the wavelength, power, focusing parameters (including the size of the focal plane, the angle between the focal plane and the surface of the mask substrate, etc.) of the first laser or the second laser, and scanning Parameters (such as scan path, scan step size, scan speed, etc.).
下面以在子步骤S13中先进行激光去膜后进行激光抛光为例，来详细说明子步骤S13的具体过程。The specific process of sub-step S13 will be explained in detail below, taking the laser film removal first and then laser polishing in sub-step S13 as an example.
首先，请结合图6和图2，可以使用脉冲宽度在飞秒级或皮秒级或微妙级或纳秒级等任意合适级别的脉冲激光作为第一激光，该第一激光以扫描的方式且被聚焦地照射掩膜材料层106上。因掩膜材料层106的材料性质及其与掩模基板101的材料性质差异，当第一激光聚焦于掩膜材料层106的表面上时，会在很短的时间内在近表面区域积累大量的热，使掩膜材料层106的表面温度迅速升高。当温度达到掩膜材料层106的近表面层物质(即表面材料)的熔点时，近表面层物质开始熔化，当温度进而达到材料的表面层物质的沸点时，近表面层物质开始蒸发，而掩模基板101的温度基本保持在室温，从而掩膜材料层106很快能自所述掩模基板101上被去除，由此获得掩模基板101，且掩模基板101表面在激光去膜过程中受到损伤较小。其中，掩膜材料层106的去除速度取决于掩膜材料层的性质、厚度以及所用的激光功率等参数。First, please combine Figure 6 and Figure 2. You can use a pulse laser with a pulse width at any appropriate level such as femtosecond level, picosecond level, microsecond level, nanosecond level, etc. as the first laser. The first laser is scanned and The irradiation is focused onto the mask material layer 106 . Due to the material properties of the mask material layer 106 and the material properties of the mask substrate 101, when the first laser is focused on the surface of the mask material layer 106, a large amount of laser light will accumulate in the near-surface area in a short period of time. The heat causes the surface temperature of the mask material layer 106 to rise rapidly. When the temperature reaches the melting point of the near-surface layer material (ie, surface material) of the mask material layer 106, the near-surface layer material begins to melt. When the temperature further reaches the boiling point of the material's surface layer material, the near-surface layer material begins to evaporate, and The temperature of the mask substrate 101 is basically maintained at room temperature, so that the mask material layer 106 can be quickly removed from the mask substrate 101, thereby obtaining the mask substrate 101, and the surface of the mask substrate 101 is in the laser removal process. suffered less damage. The removal speed of the mask material layer 106 depends on parameters such as the properties and thickness of the mask material layer and the laser power used.
可选地，在通过第一激光去除掩膜材料层106的过程中，可以通过扫描探针显微镜(SPM)等装置，在线实时检测空白掩模版(即剩余的掩膜材料层及其暴露出的掩模基板)的表面形貌，表面形貌的检测结果中可以包括当前的表面粗糙度或者表面平整度等信息，也可以包括剩余的掩膜材料层的位置、高度和厚度等信息。从而基于表面形貌的检测结果，调整激光去膜的工艺参数，包括调节照射到掩膜材料层106的表面上的第一激光的波长、功率、聚焦参数(包括焦面大小、焦面与掩模基板表面的夹角大小等)等激光参数，以及调节基于第一激光对空白掩模版表面进行激光扫描的扫描参数(包括扫描路径、扫描速度、扫描步长等)，进而基于在线调整的激光去膜工艺参数去除剩余的掩膜材料层106。由此边去膜边调整激光去膜的工艺参数，直至掩模基板101上的掩膜材料层106的去除效果达到目标，由此可以保证掩模基板101上的去膜效果，避免对掩模基板101造成不必要的损伤，同时提高激光去膜效率，也能减轻后续步骤的激光抛光工作，提高后续的激光抛光效率。Optionally, during the process of removing the mask material layer 106 by the first laser, the blank mask plate (i.e., the remaining mask material layer and its exposed parts) can be detected online in real time by means of a scanning probe microscope (SPM) or other devices. The surface topography of the mask substrate), the surface topography detection results may include information such as the current surface roughness or surface flatness, and may also include information such as the position, height and thickness of the remaining mask material layer. Therefore, based on the detection results of the surface topography, the process parameters of the laser film removal are adjusted, including adjusting the wavelength, power, and focus parameters (including the size of the focal plane, the distance between the focal plane and the mask) of the first laser irradiated on the surface of the mask material layer 106. The angle size of the template substrate surface, etc.) and other laser parameters, as well as adjusting the scanning parameters (including scanning path, scanning speed, scanning step length, etc.) based on the first laser to laser scan the blank mask surface, and then based on the online adjustment of the laser The film removal process parameters remove the remaining mask material layer 106 . Therefore, the process parameters of the laser film removal are adjusted while removing the film until the removal effect of the mask material layer 106 on the mask substrate 101 reaches the target. This can ensure the film removal effect on the mask substrate 101 and avoid damaging the mask. It causes unnecessary damage to the substrate 101 and at the same time improves the efficiency of laser film removal. It can also reduce the laser polishing work in subsequent steps and improve the efficiency of subsequent laser polishing.
应当理解的是，在本实施例中，当掩膜材料层106是多层不同性质的膜层叠而成时，可以根据该膜与掩模基板101表面的距离及该层膜的材料特性，设置第一激光的参数，不同膜去除时第一激光的至少一个参数不同。例如，随着去膜深度的增大，第一激光的功率越来越低，扫描步长越来越小，由此可以在去膜前期大块去膜，在去膜后期精细化去膜，以提供去膜效率并保护掩模基板101不受损伤。It should be understood that in this embodiment, when the mask material layer 106 is composed of multiple layers of films with different properties, the distance between the film and the surface of the mask substrate 101 and the material properties of the film can be set. Parameters of the first laser, at least one parameter of the first laser is different when different films are removed. For example, as the film removal depth increases, the power of the first laser becomes lower and lower, and the scanning step size becomes smaller and smaller. Therefore, the film can be removed in large quantities in the early stage of film removal, and in a refined manner in the later stage of film removal. To provide film removal efficiency and protect the mask substrate 101 from damage.
在子步骤S13中完成激光去膜之后，可以采用二氧化碳激光器等任意合适的激光器产生第二激光，该第二激光以扫描的方式且被聚焦地照射掩模基板101上，从而对掩模基板101的表面进行激光抛光。其中，第二激光被聚焦到掩模基板101的相应位置上时，可以打断该位置的掩模基板101的表层材料中的化学键，或者破坏该位置的掩模基板101的表层材料中的晶格结构，使该位置的掩模基板101的表层材料被去除。也就是说，该激光抛光实际上是对掩模基板101表面的冷抛光，相比于利用激光的热效应而实现的热抛光(即利用激光的热效应对基板上的表层材料进行熔融流动或蒸发等，来实现基板的表面平坦，热抛光过程中温度梯度大，导致基板表面热应力大，易产生裂纹等问题)，其给掩模基板101表面带来的热应力很小，可以忽略不计，因此不会造成掩模基板的表面产生裂纹、划痕、微缺陷、残留“鬼影”(ghost image)等缺陷，也不影响周围材料，且容易控制材料的去除量(例如去除厚度)，从而最终能够获得表面粗糙度能够达到后续直接制造新的空白掩模版要求的掩模基板101。After the laser film removal is completed in sub-step S13, any suitable laser such as a carbon dioxide laser can be used to generate a second laser. The second laser is irradiated on the mask substrate 101 in a scanning manner and in a focused manner, thereby irradiating the mask substrate 101. The surface is laser polished. When the second laser is focused on the corresponding position of the mask substrate 101, it can break the chemical bonds in the surface material of the mask substrate 101 at that position, or destroy the crystals in the surface material of the mask substrate 101 at that position. The lattice structure allows the surface material of the mask substrate 101 at this position to be removed. That is to say, the laser polishing is actually a cold polishing of the surface of the mask substrate 101. Compared with the thermal polishing achieved by using the thermal effect of the laser (that is, using the thermal effect of the laser to melt, flow or evaporate the surface material on the substrate, etc. , to achieve a flat surface of the substrate. During the thermal polishing process, the temperature gradient is large, resulting in large thermal stress on the surface of the substrate, which is prone to cracks and other problems). The thermal stress it brings to the surface of the mask substrate 101 is very small and can be ignored, so It will not cause cracks, scratches, micro-defects, residual "ghost images" and other defects on the surface of the mask substrate, nor will it affect the surrounding materials, and it is easy to control the amount of material removal (such as removal thickness), so that ultimately It is possible to obtain a mask substrate 101 whose surface roughness meets the requirements for subsequent direct manufacture of a new blank mask.
可选地，在通过第二激光对掩模基板101进行激光抛光时，可以通过扫描探针显微镜(SPM)等装置，在线实时检测掩模基板101的表面形貌，表面形貌的检测结果中可以包括当前的表面粗糙度或者表面平整度等信息，也可以包括掩模基板101各位置的高度等信息。从而基于表面形貌的检测结果，调整激光抛光的工艺参数，例如调整照射到掩模基板101的表面上的第二激光的波长、功率、聚焦参数(包括焦面大小、焦面与掩模基板表面的夹角大小等)等激光参数，以及调节基于第二激光的扫描参数(包括扫描速度、扫描步长等)，由此基于在线调整后的激光抛光工艺参数进一步抛光掩模基板101的表面，消除掩模基板101表面上的凸起和凹陷等。由此边抛光边调整激光抛光工艺参数，直至掩模基板101的表面粗糙度达到要求，由此可以保证掩模基板101的抛光效果，避免对掩模基板101造成不必要的损伤，同时提高激光抛光效率。Optionally, when the mask substrate 101 is laser polished by the second laser, the surface topography of the mask substrate 101 can be detected online in real time by a device such as a scanning probe microscope (SPM). In the detection results of the surface topography, It may include information such as the current surface roughness or surface flatness, and may also include information such as the height of each position of the mask substrate 101 . Therefore, based on the detection results of the surface topography, the process parameters of the laser polishing are adjusted, such as adjusting the wavelength, power, and focus parameters of the second laser irradiated on the surface of the mask substrate 101 (including the size of the focal plane, the distance between the focal plane and the mask substrate) The angle of the surface, etc.) and other laser parameters, and adjust the scanning parameters based on the second laser (including scanning speed, scanning step size, etc.), thereby further polishing the surface of the mask substrate 101 based on the online adjusted laser polishing process parameters. , eliminating protrusions, depressions, etc. on the surface of the mask substrate 101. Therefore, the laser polishing process parameters are adjusted while polishing until the surface roughness of the mask substrate 101 reaches the requirements. This can ensure the polishing effect of the mask substrate 101, avoid unnecessary damage to the mask substrate 101, and at the same time improve the laser Polishing efficiency.
在子步骤S13之后，可以再次返回子步骤S11，以再次在掩模基板上沉积新的掩膜材料层，由此循环子步骤S11～S13，直至得到的空白掩模版达到目标。其中，可选地，在检测到空白掩模版的性能未达到目标时，还根据检测结果调整脉冲激光沉积工艺的参数，以在步骤S13中的激光表面处理结束之后且需要再次执行(即返回)步骤S11时，能在步骤S11中基于调整后的参数对激光表面处理后的空白掩模版来执行相应的脉冲激光沉积工艺，由此提高再次执行脉冲激光沉积工艺的效果，使得步骤S11至S13的循环次数尽可能地减少，从而提高制造能够达标的空白掩模版的效率。After sub-step S13, sub-step S11 can be returned again to deposit a new mask material layer on the mask substrate again, thereby looping sub-steps S11 to S13 until the obtained blank mask reaches the target. Optionally, when it is detected that the performance of the blank mask does not reach the target, the parameters of the pulse laser deposition process are also adjusted according to the detection results so that it needs to be executed again (i.e. return) after the laser surface treatment in step S13 is completed. In step S11, the corresponding pulse laser deposition process can be performed on the blank mask after laser surface treatment based on the adjusted parameters in step S11, thereby improving the effect of performing the pulse laser deposition process again, so that the steps from steps S11 to S13 are The number of cycles is reduced as much as possible, thereby increasing the efficiency of producing blank masks that meet the standards.
进一步地，在所述空白掩模版的性能达到目标后，还可以进一步执行步骤S2，即对空白掩模版的掩膜材料层106进行激光直写。Further, after the performance of the blank mask reaches the target, step S2 may be further performed, that is, laser direct writing is performed on the mask material layer 106 of the blank mask.
其中，激光表面处理中使用的第一激光和第二激光可以均来自产生脉冲激光沉积工艺所需的脉冲激光的激光器。在其他实施例中，激光表面处理中使用的第一激光和第二激光两者中的一者与脉冲激光沉积工艺中使用的脉冲激光来自同一激光器，而另一者可以是与脉冲激光沉积工艺中使用的脉冲激光来自不同的激光器，该另一者可以是脉冲激光，其脉冲宽度在微妙级、纳秒级、飞秒级或皮秒级等任意合适级别，该另一者也可以是连续波(CW)激光或准连续波(QCW)激光等。Wherein, the first laser and the second laser used in the laser surface treatment may both come from a laser that generates pulse laser required for the pulse laser deposition process. In other embodiments, one of the first laser and the second laser used in the laser surface treatment is from the same laser as the pulsed laser used in the pulsed laser deposition process, and the other may be from the same laser as the pulsed laser deposition process. The pulse laser used in the laser comes from different lasers. The other one can be a pulse laser with a pulse width at any suitable level such as microsecond level, nanosecond level, femtosecond level or picosecond level. The other one can also be a continuous laser. Wave (CW) laser or quasi-continuous wave (QCW) laser, etc.
应当理解的是，本实施例的掩模版的制造方法，可以采用本领域中任意合适的设备机台系统来实现，但是优选地采用本实施例的空掩模版的制造系统来实现。It should be understood that the reticle manufacturing method of this embodiment can be implemented using any suitable equipment and machine system in the field, but it is preferably implemented using the empty reticle manufacturing system of this embodiment.
请参考图7，本实施例提供的掩模版的制造系统，其包括集成在同一工艺机台上的脉冲激光沉积装置200、激光表面处理装置201、检测装置203、系统总控制装置202以及脉冲激光直写装置204。Please refer to Figure 7. This embodiment provides a mask manufacturing system, which includes a pulse laser deposition device 200, a laser surface treatment device 201, a detection device 203, a system overall control device 202 and a pulse laser integrated on the same process machine. Direct writing device 204.
本实施例的掩模版的制造系统与第一实施例的掩模版的制造系统的区别在于，增设了激光表面处理装置201和检测装置203。The difference between the mask manufacturing system of this embodiment and the mask manufacturing system of the first embodiment is that a laser surface treatment device 201 and a detection device 203 are added.
其中，检测装置203用于检测脉冲激光沉积装置200提供的空白掩模版的性能是否达到目标。例如检测装置203可以检测掩膜材料层106或者掩模基板101的厚度、表面平坦度以及空白掩模版的透射率和反射率中的至少一种性能指标是否达到目标。Among them, the detection device 203 is used to detect whether the performance of the blank mask provided by the pulse laser deposition device 200 reaches the target. For example, the detection device 203 can detect whether at least one performance index of the thickness of the mask material layer 106 or the mask substrate 101, the surface flatness, and the transmittance and reflectivity of the blank mask reaches the target.
激光表面处理装置201用于在检测装置203检测到该空白掩模版的性能未达标时，根据检测结果选择相应的激光表面处理方式，对掩模基板101上的膜层表面进行激光表面处理，以修整空白掩模版的掩膜材料层106的表面，或者去除掩模基板101上的掩膜材料层106并修整掩模基板101的表面。其中当掩模基板101上没有掩膜材料层106覆盖时，该激光表面处理是对掩模基板101的表层进行表面处理，当掩模基板101上有掩膜材料层106覆盖时，该激光表面处理是对掩模基板101上的部分厚度或全部厚度的掩膜材料层106进行表面处理。可选地，激光表面处理装置201能够提供的激光表面处理方式包括以下三种方式之一：The laser surface treatment device 201 is used to select a corresponding laser surface treatment method according to the detection results when the detection device 203 detects that the performance of the blank mask plate is not up to standard, and perform laser surface treatment on the surface of the film layer on the mask substrate 101, so as to The surface of the mask material layer 106 of the blank mask is trimmed, or the mask material layer 106 on the mask substrate 101 is removed and the surface of the mask substrate 101 is trimmed. When the mask substrate 101 is not covered by the mask material layer 106, the laser surface treatment is to perform surface treatment on the surface layer of the mask substrate 101. When the mask substrate 101 is covered by the mask material layer 106, the laser surface treatment The treatment is to perform surface treatment on the partial thickness or the entire thickness of the mask material layer 106 on the mask substrate 101 . Optionally, the laser surface treatment methods that the laser surface treatment device 201 can provide include one of the following three methods:
第一种方式，采用第一激光进行激光去膜，以去除所述掩模基板上的相应厚度的膜层；The first way is to use a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate;
第二种方式，采用不同于所述第一激光的第二激光对所述掩模基板上的膜层表面进行激光抛光；In a second way, a second laser different from the first laser is used to laser polish the surface of the film layer on the mask substrate;
第三种方式，先采用所述第一激光进行激光去膜，后采用所述第二激光进行激光抛光。The third method is to first use the first laser to perform laser film removal, and then use the second laser to perform laser polishing.
系统总控制装置202用于控制激光表面处理装置201、脉冲激光沉积装置200、脉冲激光直写装置204和检测装置203协调工作，且在检测装置203检测到脉冲激光沉积装置200输出的空白掩模版的性能未达标时，进一步控制掩模基板101(即样品10)在脉冲激光沉积装置200、检测装置203和激光表面处理装置201三处被循环传输和处理，直至空白掩模版的性能达到目标。The system overall control device 202 is used to control the coordinated work of the laser surface treatment device 201, the pulse laser deposition device 200, the pulse laser direct writing device 204 and the detection device 203, and the detection device 203 detects the blank mask output by the pulse laser deposition device 200 When the performance does not meet the target, the mask substrate 101 (i.e., the sample 10) is further controlled to be cyclically transmitted and processed in the pulse laser deposition device 200, the detection device 203, and the laser surface treatment device 201 until the performance of the blank mask plate reaches the target.
可选地，所述系统总控制装置202还用于在所述检测装置203检测到所述空白掩模版的性能未达标时，还调整所述脉冲激光沉积装置200的工艺参数，以使得所述脉冲激光沉积装置200基于调整后的工艺参数执行接下来的所述脉冲激光沉积工艺。Optionally, the system overall control device 202 is also configured to adjust the process parameters of the pulse laser deposition device 200 when the detection device 203 detects that the performance of the blank mask is not up to standard, so that the The pulse laser deposition apparatus 200 performs the subsequent pulse laser deposition process based on the adjusted process parameters.
值得注意的是，激光表面处理装置201实施激光去膜工艺或者实施激光抛光工艺所需要的脉冲激光与脉冲激光沉积装置200实施脉冲激光沉积工艺所使用的脉冲激光来自同一激光器。It is worth noting that the pulse laser used by the laser surface treatment device 201 to perform the laser film removal process or the laser polishing process and the pulse laser used by the pulse laser deposition device 200 to perform the pulse laser deposition process come from the same laser.
另外，系统总控制装置202、激光表面处理装置201、脉冲激光沉积装置200、检测装置203和脉冲激光直写装置204中的任意一个装置可以被拆分成多个模块，或者，这些装置中的一个或多个装置的至少部分功能可以与其他装置的至少部分功能相结合，并在一个模块中实现。另外，系统总控制装置202、激光表面处理装置201、脉冲激光沉积装置200、检测装置203和脉冲激光直写装置204中的至少一个可以至少被部分地实现为硬件电路，例如现场可编程门阵列(FPGA)、可编程逻辑阵列(PLA)、片上系统、基板上的系统、封装上的系统、专用集成电路(ASIC)，或可以以对电路进行集成或封装的任何其他的合理方式等硬件或固件来实现，或以软件、硬件以及固件三种实现方式的适当组合来实现。或者，系统总控制装置202、激光表面处理装置201、脉冲激光沉积装置200、检测装置203和脉冲激光直写装置204中的至少一个可以至少被部分地实现为计算机程序模块，当该程序被计算机运行时，可以执行相应模块的功能。In addition, any one of the system overall control device 202, laser surface treatment device 201, pulse laser deposition device 200, detection device 203 and pulse laser direct writing device 204 can be split into multiple modules, or one of these devices At least part of the functions of one or more devices may be combined with at least part of the functions of other devices and implemented in one module. In addition, at least one of the system overall control device 202, the laser surface treatment device 201, the pulse laser deposition device 200, the detection device 203 and the pulse laser direct writing device 204 may be at least partially implemented as a hardware circuit, such as a field programmable gate array. (FPGA), programmable logic array (PLA), system-on-a-chip, system-on-substrate, system-on-package, application-specific integrated circuit (ASIC), or any other reasonable manner in which circuits can be integrated or packaged. It can be implemented by firmware, or by an appropriate combination of software, hardware and firmware. Alternatively, at least one of the system overall control device 202, the laser surface treatment device 201, the pulse laser deposition device 200, the detection device 203 and the pulse laser direct writing device 204 can be at least partially implemented as a computer program module. When the program is used by a computer When running, the functions of the corresponding module can be executed.
作为一种示例，请参考图8，本实施例的脉冲激光沉积装置200和脉冲激光直写装置204的结构与第一实施例相同，具体地，脉冲激光沉积装置200包括第一聚光机构17、具有透光窗口18的沉积腔室19以及设置在所述沉积腔室19中的载台14和靶材15。脉冲激光直写装置204包括激光直写腔室29及设置沿光路依次布设在激光直写腔室29中的反射镜20、第二扩束机构21、第一合二色棱镜23、第二合二色棱镜24、第二扫描聚焦机构25。脉冲激光直写装置204还包括布设在激光直写腔室29中的照明光源22、第二聚光机构26和探测器27。As an example, please refer to FIG. 8 . The structures of the pulse laser deposition device 200 and the pulse laser direct writing device 204 of this embodiment are the same as those of the first embodiment. Specifically, the pulse laser deposition device 200 includes a first focusing mechanism 17 , a deposition chamber 19 having a light-transmitting window 18, and a stage 14 and a target 15 disposed in the deposition chamber 19. The pulsed laser direct writing device 204 includes a laser direct writing chamber 29 and a reflector 20 arranged sequentially along the optical path in the laser direct writing chamber 29 , a second beam expansion mechanism 21 , a first combined dichroic prism 23 , a second combined dichroic prism 23 Dichroic prism 24, second scanning focusing mechanism 25. The pulsed laser direct writing device 204 also includes an illumination light source 22 , a second focusing mechanism 26 and a detector 27 arranged in the laser direct writing chamber 29 .
本实施例的激光表面处理装置201包括第一扩束机构6、调焦机构7a、第一扫描聚焦机构7b、具有透光窗口9的激光表面处理腔室11。本示例的制造系统除了包括系统总控制装置202、脉冲激光沉积装置200、检测装置203、激光表面处理装置201和脉冲激光直写装置204之外，还包括集成在该工艺机台上且沿光路依次布设的激光器1、快门2、四分之一波片3、起偏器4、第一分束器5、第二分束器16，另外还包括集成在该工艺机台上的第一过渡腔室12、第二过渡腔室50和机械手传送装置12a、50a。The laser surface treatment device 201 of this embodiment includes a first beam expansion mechanism 6, a focusing mechanism 7a, a first scanning focusing mechanism 7b, and a laser surface treatment chamber 11 with a light-transmitting window 9. In addition to the overall system control device 202, the pulse laser deposition device 200, the detection device 203, the laser surface treatment device 201 and the pulse laser direct writing device 204, the manufacturing system in this example also includes components integrated on the process machine and along the optical path. The laser 1, the shutter 2, the quarter wave plate 3, the polarizer 4, the first beam splitter 5, the second beam splitter 16 are arranged in sequence, and also include the first transition integrated on the process machine table. Chamber 12, second transition chamber 50 and robot transfer devices 12a, 50a.
其中，第一分束器5将起偏器4出射的脉冲激光(即来自激光器1)分成两路，一路经第一扩束机构6、调焦机构7a、第一扫描聚焦机构7b、透光窗口9照射到激光表面处理腔室11中的样品10上，另一路经第二分束器16再次分成两路，一路经第一聚光机构17、透光窗口18照射到沉积腔室19中的靶材15上，另一路经反射镜20、第二扩束机构21、第一合二色棱镜23、第二合二色棱镜24、第二扫描聚焦机构25照射到激光直写装置204的腔室29中的承载台28所承载的样品10上。Among them, the first beam splitter 5 splits the pulsed laser light emitted from the polarizer 4 (that is, from the laser 1) into two paths. One path passes through the first beam expander 6, the focusing mechanism 7a, the first scanning focusing mechanism 7b, and the light transmission path. The window 9 irradiates the sample 10 in the laser surface treatment chamber 11, and the other path is divided into two paths again through the second beam splitter 16. One path passes through the first focusing mechanism 17 and the light-transmitting window 18 and is irradiated into the deposition chamber 19. On the target 15, another path passes through the reflector 20, the second beam expansion mechanism 21, the first combined dichroic prism 23, the second combined dichroic prism 24, and the second scanning focusing mechanism 25 to illuminate the laser direct writing device 204. on the sample 10 carried by the carrying platform 28 in the chamber 29 .
第一扩束机构6用于主要用于对第一分束器5出射的脉冲激光的光束直径进行扩展，并减小其出射的脉冲激光的光束发射角。与省略第一扩束机构6的情况相比，有第一扩束机构6的情况下，第一分束器5出射的脉冲激光的光束经第一扩束机构6扩束后并照射的样品10上后的光班能量在光班范围内分布更均匀。The first beam expansion mechanism 6 is mainly used to expand the beam diameter of the pulse laser emitted from the first beam splitter 5 and reduce the beam emission angle of the pulse laser emitted therefrom. Compared with the case where the first beam expander 6 is omitted, in the case where the first beam expander 6 is present, the pulse laser beam emitted from the first beam splitter 5 is expanded by the first beam expander 6 and then irradiated to the sample. The energy of the light class after 10 is more evenly distributed within the range of the light class.
本实施例中，激光器1输出的脉冲激光的光束直径和发散角的乘积是光学不变量，近似为一定值。当第一扩束机构6将第一分束器5出射的脉冲激光的光束直径扩大x倍时，第一扩束机构6出射的脉冲激光的发散角相应压缩为原来的1/x。总结而言，在该光路上设置第一扩束机构6，可以降低对该光路上的其他光学元件的要求，且使得聚焦到样品10上的光班能量分布更均匀，进而提高脉冲激光能量利用效果的目的。In this embodiment, the product of the beam diameter and the divergence angle of the pulsed laser output by the laser 1 is an optical invariant, which is approximately a certain value. When the first beam expander 6 expands the beam diameter of the pulse laser emitted by the first beam splitter 5 by x times, the divergence angle of the pulse laser emitted by the first beam expander 6 is correspondingly compressed to 1/x of the original value. In summary, arranging the first beam expansion mechanism 6 on the optical path can reduce the requirements for other optical components on the optical path, and make the energy distribution of the light beam focused on the sample 10 more uniform, thereby improving the utilization of pulse laser energy. effect purpose.
可选地，第一扩束机构6可以是电控部件，其可以根据系统总控制装置202的控制指令或调节指令来调节和控制第一扩束机构6的扩束比。Alternatively, the first beam expansion mechanism 6 may be an electronically controlled component, which can adjust and control the beam expansion ratio of the first beam expansion mechanism 6 according to the control instructions or adjustment instructions of the system overall control device 202 .
可选地，第一扩束机构6可以是激光扩束准直镜。Alternatively, the first beam expansion mechanism 6 may be a laser beam expansion collimator.
调焦机构7a和第一扫描聚焦机构7b可以组成用于控制焦距和焦面等激光参数及实现扫描路径等扫描参数的激光控制机构8。调焦机构7a用于调节入射到激光表面处理腔室11中的样品10表面上的激光的焦距及该激光的焦面与激光表面处理腔室11中的样品10表面之间的夹角。调焦机构7a可以包括场镜，其又称平场聚焦镜、F-theta透镜，区别于普通球面镜只能在弧面上聚焦，该场镜经过特别设计，使得入射的激光束聚焦出射后，能在激光表面处理腔室11中的样品10表面上聚焦，其入射激光的入射角与其出射激光的位置成线性关系，与第一扫描聚焦机构7b配合使用，可以精确的控制激光在激光表面处理腔室11中的样品10表面上的聚焦位置。调焦机构7a可以包括电控部件，其可以根据系统总控制装置202的控制指令或调节指令，来调节入射到激光表面处理腔室11中的样品10表面上的激光的焦距、焦面等聚焦参数。The focusing mechanism 7a and the first scanning focusing mechanism 7b can form a laser control mechanism 8 for controlling laser parameters such as focal length and focal plane and realizing scanning parameters such as scanning paths. The focusing mechanism 7 a is used to adjust the focal length of the laser incident on the surface of the sample 10 in the laser surface treatment chamber 11 and the angle between the focal plane of the laser and the surface of the sample 10 in the laser surface treatment chamber 11 . The focusing mechanism 7a may include a field lens, which is also called a flat field focusing lens or an F-theta lens. Unlike ordinary spherical lenses that can only focus on a curved surface, the field lens is specially designed to focus the incident laser beam after it exits. It can be focused on the surface of the sample 10 in the laser surface treatment chamber 11. The incident angle of the incident laser is linearly related to the position of the outgoing laser. When used in conjunction with the first scanning focusing mechanism 7b, the laser can be accurately controlled during laser surface treatment. Focus position on the surface of sample 10 in chamber 11 . The focusing mechanism 7a may include an electronic control component, which can adjust the focal length, focal plane, etc. focus of the laser incident on the surface of the sample 10 in the laser surface treatment chamber 11 according to the control instructions or adjustment instructions of the system overall control device 202. parameter.
第一扫描聚焦机构7b用于利用调焦机构7a出射的激光对激光表面处理腔室11中的样品10进行激光扫描，且扫描速度和扫描步长等扫描参数根据系统总控制装置202的指令设置和调节。可选地，第一扫描聚焦机构7包括振镜，该振镜由两个分别连接摆动电机的反射镜组成。在电脑端设置特定的路径并将运动信号发送到系统总控制装置202，系统总控制装置202通过控制电机来控制反射镜的转动，使激光在激光表面处理腔室11中的样品10的表面按照特定的路径摆动，配合激光表面处理腔室11中用于承载样品10的承载台(未图示)的运动，从而对激光表面处理腔室11中的样品10的表面进行扫描，实现超快激光的串行加工，快速去除激光表面处理腔室11中的样品10上的掩膜材料层或者对去膜后的掩模基板进行抛光。The first scanning focusing mechanism 7b is used to perform laser scanning on the sample 10 in the laser surface treatment chamber 11 using the laser light emitted by the focusing mechanism 7a, and the scanning parameters such as scanning speed and scanning step length are set according to the instructions of the system overall control device 202 and regulation. Optionally, the first scanning focusing mechanism 7 includes a galvanometer, which is composed of two mirrors respectively connected to swing motors. Set a specific path on the computer side and send the motion signal to the system general control device 202. The system general control device 202 controls the rotation of the mirror by controlling the motor, so that the laser can be used on the surface of the sample 10 in the laser surface treatment chamber 11 according to the The specific path swing is coordinated with the movement of the carrying platform (not shown) for carrying the sample 10 in the laser surface treatment chamber 11, so as to scan the surface of the sample 10 in the laser surface treatment chamber 11 to achieve ultra-fast laser For serial processing, the mask material layer on the sample 10 in the laser surface treatment chamber 11 is quickly removed or the mask substrate after the film removal is polished.
过渡腔室12设置在激光表面处理腔室11和沉积腔室19之间，用于实现样品10在激光表面处理腔室11前和在沉积腔室19前的排队等待。机械手传送装置12a用于实现掩模基板(即样品10)在激光表面处理腔室11、过渡腔室12和沉积腔室19之间传送。The transition chamber 12 is provided between the laser surface treatment chamber 11 and the deposition chamber 19 , and is used to queue up the sample 10 in front of the laser surface treatment chamber 11 and in front of the deposition chamber 19 . The robot transfer device 12 a is used to transfer the mask substrate (ie, the sample 10 ) between the laser surface treatment chamber 11 , the transition chamber 12 and the deposition chamber 19 .
图8所示的示例可以使得激光表面处理装置201实现激光去膜或激光抛光的一种激光表面处理功能，并利用同一种脉冲激光实现脉冲激光沉积的功能。激光表面处理装置201和脉冲激光沉积装置200集成在同一工艺机台上，且复用激光器1、快门2、四分之一波片3和起偏器4、第一分束器5这些光学元件，能够简化机台结构，有利于缩小机台体积并降低设备成本。且在制造空白掩模版的过程中可以根据检测装置203的检测结果让样品10在激光表面处理腔室11和沉积腔室19之间往复，保证了产品的良率。The example shown in FIG. 8 can enable the laser surface treatment device 201 to implement a laser surface treatment function of laser film removal or laser polishing, and use the same pulse laser to implement a pulse laser deposition function. The laser surface treatment device 201 and the pulse laser deposition device 200 are integrated on the same process machine, and multiplex the optical elements of the laser 1, the shutter 2, the quarter wave plate 3, the polarizer 4, and the first beam splitter 5. , can simplify the machine structure, help reduce the size of the machine and reduce equipment costs. In addition, during the process of manufacturing the blank mask, the sample 10 can be made to reciprocate between the laser surface treatment chamber 11 and the deposition chamber 19 according to the detection results of the detection device 203, thereby ensuring the product yield.
作为另一种示例，请参考图9，本示例的制造系统与图8所示的制造系统的区别在于，还进一步包括表面形貌检测单元30，该表面形貌检测单元30安装在激光表面处理腔室11之内，其看做是激光表面处理装置201的一部分，也可以看做是检测装置203中与激光表面处理装置201集成在一起的相应部分。As another example, please refer to Figure 9. The difference between the manufacturing system of this example and the manufacturing system shown in Figure 8 is that it further includes a surface topography detection unit 30. The surface topography detection unit 30 is installed on the laser surface treatment unit. Inside the chamber 11, it can be regarded as a part of the laser surface treatment device 201, and can also be regarded as the corresponding part of the detection device 203 integrated with the laser surface treatment device 201.
具体地，该表面形貌检测单元30可以包括扫描探针显微镜(Scanning ProbeMicroscope，SPM)。扫描探针显微镜(SPM)是一类仪器的统称，其主要是扫描隧道显微镜(Scanning Tunneling Microscope,缩写为STM)和以原子力显微镜(Atomic ForceMicroscope，AFM)为代表的扫描力显微镜(Scanning Force Microscope，SFM)。请参考图9所示，SPM的两个关键部件是探针(Probe)35和扫描管(Scanner),扫描管包括扫描光源33和扫描驱动悬臂34，探针35安装在扫描驱动悬臂34的前端，通过扫描管的移动来控制探针35和激光表面处理腔室11中的样品10间的距离，当探针35和激光表面处理腔室11中的样品10接近到一定程度时，如果有一个足够灵敏且随探针35和激光表面处理腔室11中的样品10之间的距离单调变化的物理量P＝P(z),(例如是范德华尔斯力)那么该物理量可以被信号接收器32和信号处理器31组成的反馈系统(Feedback System，FS)检测到，进而得到激光表面处理腔室11中的样品10的表面位置与对应高度的信息(即得到激光表面处理腔室11中的样品10的表面粗糙度信息)，从而描绘出激光表面处理腔室11中的样品10的表面形貌。信号处理器31还将其所得到的表面形貌检测结果反馈给系统总控制装置202，由此系统总控制装置202可以向激光器1、第一扩束机构6、调焦机构7a和第一扫描聚焦机构7b等机构发出相应的指令，以调整激光表面处理的工艺参数。Specifically, the surface topography detection unit 30 may include a scanning probe microscope (Scanning ProbeMicroscope, SPM). Scanning Probe Microscope (SPM) is a general term for a class of instruments, which are mainly Scanning Tunneling Microscope (STM) and Scanning Force Microscope (Scanning Force Microscope) represented by Atomic Force Microscope (AFM). SFM). Please refer to Figure 9. The two key components of the SPM are the probe (Probe) 35 and the scan tube (Scanner). The scan tube includes a scanning light source 33 and a scanning drive cantilever 34. The probe 35 is installed at the front end of the scanning drive cantilever 34. , the distance between the probe 35 and the sample 10 in the laser surface treatment chamber 11 is controlled by the movement of the scanning tube. When the probe 35 and the sample 10 in the laser surface treatment chamber 11 are close to a certain extent, if there is a A physical quantity P=P(z) that is sensitive enough and changes monotonically with the distance between the probe 35 and the sample 10 in the laser surface treatment chamber 11 (for example, van der Waals force), then this physical quantity can be detected by the signal receiver 32 The feedback system (Feedback System, FS) composed of the signal processor 31 detects, and then obtains the information of the surface position and corresponding height of the sample 10 in the laser surface treatment chamber 11 (that is, obtains the information of the sample in the laser surface treatment chamber 11 10 surface roughness information), thereby depicting the surface topography of the sample 10 in the laser surface treatment chamber 11. The signal processor 31 also feeds back the obtained surface topography detection results to the system overall control device 202, whereby the system overall control device 202 can provide information to the laser 1, the first beam expansion mechanism 6, the focusing mechanism 7a and the first scanning The focusing mechanism 7b and other mechanisms issue corresponding instructions to adjust the process parameters of the laser surface treatment.
图9所示的示例在实现图8所示的示例的功能基础上，还进一步实现了根据表面形貌检测单元30的在线检测结果，在线实时调整激光表面处理的工艺参数的功能。The example shown in FIG. 9 not only implements the functions of the example shown in FIG. 8 , but also further realizes the function of adjusting the process parameters of the laser surface treatment online in real time based on the online detection results of the surface topography detection unit 30 .
作为又一种示例，请参考图10，本示例的制造系统与图9所示的制造系统的区别在于，还进一步包括激光器41、反射系统和合束机构40。As another example, please refer to FIG. 10 . The difference between the manufacturing system of this example and the manufacturing system shown in FIG. 9 is that it further includes a laser 41 , a reflection system and a beam combining mechanism 40 .
其中，激光器1和激光器41产生的激光不同。且当激光器41产生的激光作为第一激光并用于激光去膜时，激光器1产生的激光作为第二激光并用于激光抛光。当激光器1产生的激光作为第一激光并用于激光去膜时，激光器41产生的激光作为第二激光并用于激光抛光。且第一激光和第二激光两者中的一者还用于脉冲激光沉积和脉冲激光直写，此时该激光为脉冲激光，其脉冲宽度在微妙级、纳秒级、飞秒级或皮秒级等任意合适级别。第一激光和第二激光两者中的另一者与脉冲激光沉积工艺中使用的脉冲激光来自不同的激光器，该另一者可以是脉冲激光，其脉冲宽度在微妙级、纳秒级、飞秒级或皮秒级等任意合适级别，该另一者也可以是连续波(CW)激光或准连续波(QCW)激光。Among them, laser 1 and laser 41 generate different lasers. And when the laser generated by the laser 41 is used as the first laser and used for laser film removal, the laser generated by the laser 1 is used as the second laser and used for laser polishing. When the laser generated by laser 1 is used as the first laser and used for laser film removal, the laser generated by laser 41 is used as the second laser and used for laser polishing. And one of the first laser and the second laser is also used for pulse laser deposition and pulse laser direct writing. At this time, the laser is a pulse laser, and its pulse width is in the microsecond level, nanosecond level, femtosecond level or picosecond level. Seconds and any suitable level. The other of the first laser and the second laser is from a different laser than the pulse laser used in the pulse laser deposition process. The other may be a pulse laser with a pulse width in the microsecond, nanosecond, or femtosecond range. Any suitable level such as second level or picosecond level, the other can also be a continuous wave (CW) laser or a quasi-continuous wave (QCW) laser.
可选地，激光器1为飞秒脉冲激光器且产生的脉冲激光作为第二激光用于激光抛光，且激光器1产生的激光还用于脉冲激光沉积。Optionally, the laser 1 is a femtosecond pulse laser and the pulse laser generated is used as the second laser for laser polishing, and the laser generated by the laser 1 is also used for pulse laser deposition.
反射系统可以根据激光器41出射的激光角度以及合束机构40所允许的激光入射角度来合理设置或者被省略。本示例中，反射系统包括反射镜42和43，用于将激光器41出射的激光反射到合束机构40中。The reflection system can be reasonably set or omitted according to the laser angle emitted by the laser 41 and the laser incident angle allowed by the beam combining mechanism 40 . In this example, the reflection system includes mirrors 42 and 43 for reflecting the laser light emitted by the laser 41 into the beam combining mechanism 40 .
合束机构40分时接收第一分束器5产生的脉冲激光和激光器41产生的脉冲激光，并将所接收的脉冲激光(即第一激光或第二激光)沿同一角度入射至第一扩束机构6中。可选地，合束机构40可以具有电控部件，该电控部件能够根据系统总控制装置202的控制指令或调节指令来控制和调节激光的出射角度。The beam combining mechanism 40 receives the pulse laser generated by the first beam splitter 5 and the pulse laser generated by the laser 41 in a time-sharing manner, and radiates the received pulse laser (i.e., the first laser or the second laser) to the first expanded laser along the same angle. Bundle mechanism 6. Optionally, the beam combining mechanism 40 may have an electronic control component that can control and adjust the emission angle of the laser according to the control instructions or adjustment instructions of the system overall control device 202 .
图10所示的示例在实现图9所示的示例的功能基础上，还进一步实现了激光去膜和激光抛光两种激光表面处理方式的兼容。The example shown in Figure 10 not only realizes the functions of the example shown in Figure 9, but also further realizes the compatibility of two laser surface treatment methods: laser film removal and laser polishing.
此外，还应当理解的是，图8至图10所示的具体结构仅仅只作为一种举例说明，并不表明本实施例的制造系统仅仅具有图中所示的结构，其可以进一步包括相应所需的任意合适的光学或电子元件。例如，请参考图8，在第一扩束机构6和调焦机构7a之间设置反射镜，从而将第一扩束机构6出射的激光以最佳角度输送至调焦机构7a中。还例如，对于图8中的调焦机构7a和第一扫描聚焦机构7b的设置，也可以设置调焦机构7a在后，第一扫描聚焦机构7b在前。而对于图10中的第一扩束机构6和合束机构40的设置，也可以设置第一扩束机构6在前，合束机构40在后。In addition, it should also be understood that the specific structures shown in FIGS. 8 to 10 are only used as examples and do not mean that the manufacturing system of this embodiment only has the structures shown in the figures, and may further include corresponding Any suitable optical or electronic components required. For example, please refer to FIG. 8 , a reflecting mirror is provided between the first beam expanding mechanism 6 and the focusing mechanism 7 a, so that the laser light emitted from the first beam expanding mechanism 6 is transported to the focusing mechanism 7 a at an optimal angle. For another example, regarding the arrangement of the focusing mechanism 7a and the first scanning focusing mechanism 7b in FIG. 8 , the focusing mechanism 7a can also be arranged at the rear and the first scanning focusing mechanism 7b at the front. Regarding the arrangement of the first beam expanding mechanism 6 and the beam combining mechanism 40 in FIG. 10 , the first beam expanding mechanism 6 can also be arranged in the front and the beam combining mechanism 40 in the rear.
总结而言，本实施例的掩模版的制造方法及制造系统，能够在脉冲激光沉积之后对空白掩模版进行在线的性能检测，在空白掩模版的性能未达标时，及时对空白掩模版进行激光表面处理，甚至再次的脉冲激光沉积，由此经过脉冲激光沉积(PLD)、检测、激光表面处理(激光去膜或者先激光去膜后激光抛光)这些步骤的循环执行，可以保证最终形成的空白掩模版的性能达到目标，进而对性能达到目标的空白掩模版进行激光直写，可以得到具有图案的掩模版，由此提高了掩模版的制造良率(即降低了掩模版的废品率)，从而能够相对降低掩模版的制造成本。In summary, the mask manufacturing method and manufacturing system of this embodiment can perform online performance testing on the blank mask after pulse laser deposition. When the performance of the blank mask does not meet the standard, laser testing can be performed on the blank mask in a timely manner. Surface treatment, or even pulse laser deposition again, through the cyclic execution of pulse laser deposition (PLD), detection, laser surface treatment (laser removal or laser removal first and then laser polishing), can ensure the final blank is formed The performance of the mask reaches the target, and then laser direct writing is performed on the blank mask whose performance reaches the target, and a mask with a pattern can be obtained, thus improving the manufacturing yield of the mask (that is, reducing the scrap rate of the mask). This can relatively reduce the manufacturing cost of the mask.
进一步地，在检测到空白掩模版的性能未达标时，还调整脉冲激光沉积工艺的参数，以基于调整后的参数执行后续的脉冲激光沉积，脉冲激光沉积工艺的靶材利用率高，且可以提高掩模版的制造效率。Furthermore, when it is detected that the performance of the blank mask is not up to standard, the parameters of the pulse laser deposition process are also adjusted to perform subsequent pulse laser deposition based on the adjusted parameters. The target utilization rate of the pulse laser deposition process is high and can Improve mask manufacturing efficiency.
第三实施例Third embodiment
正如背景技术所述，随着半导体器件集成度的越来越高以及器件特征尺寸的越来越小，半导体器件制备所需的掩模版数量也越来越多，而且随着工艺节点的尺寸减小，掩模版本身的制造成本以及不合格掩模版废弃的成本也在不断增加，从而导致半导体器件的生产成本居高不下。同时，无法继续使用的废弃掩模版的数量也在呈几何数级的增加，废弃掩模版的处理和管理会产生很多费用，高价格掩模版的低利用率不仅浪费资源，其造成的损失对企业也是很大的负担。As mentioned in the background art, as the integration level of semiconductor devices becomes higher and higher and the feature sizes of devices become smaller and smaller, the number of masks required for the preparation of semiconductor devices is also increasing, and as the size of process nodes decreases Small, the manufacturing cost of the mask itself and the cost of discarding unqualified masks are also increasing, resulting in high production costs of semiconductor devices. At the same time, the number of discarded masks that can no longer be used is also increasing geometrically. The processing and management of discarded masks will incur a lot of costs. The low utilization rate of high-priced masks not only wastes resources, but also causes losses to enterprises. It’s also a big burden.
基于此，请参考图11，本实施例提供一种掩模版的制造方法，其可以对待废弃的掩模版进行回收和再利用，从而降低新的掩模版的制造成本。该制造方法包括以下步骤：Based on this, please refer to FIG. 11 . This embodiment provides a mask manufacturing method, which can recycle and reuse the mask to be discarded, thereby reducing the manufacturing cost of a new mask. The manufacturing method includes the following steps:
S0，提供待废弃的掩模版，并在所述工艺机台上对所述待废弃的掩模版进行激光表面处理，以去除所述待废弃的掩模版的掩模基板上的膜层，得到所述掩模基板；S0, provide a mask to be discarded, and perform laser surface treatment on the mask to be discarded on the process machine to remove the film layer on the mask substrate of the mask to be discarded, to obtain the The mask substrate;
S1，在所述工艺机台上利用脉冲激光在掩模基板上进行脉冲激光沉积，以在所述掩模基板上形成所需的掩膜材料层，得到空白掩模版；S1, use pulse laser to perform pulse laser deposition on the mask substrate on the process machine to form the required mask material layer on the mask substrate to obtain a blank mask;
S2，在所述工艺机台上进一步采用所述脉冲激光对所述掩膜材料层进行激光直写，以在所述掩膜材料层中形成所需图案，得到掩模版。S2, further use the pulse laser to perform laser direct writing on the mask material layer on the process machine to form the required pattern in the mask material layer to obtain a mask.
其中，步骤S1可以进一步包括循环执行以下子步骤：Among them, step S1 may further include cyclically executing the following sub-steps:
S11，在所述工艺机台上采用所述脉冲激光，在所述掩模基板上进行脉冲激光沉积，以得到具有相应的掩膜材料层的空白掩模版；S11, use the pulse laser on the process machine to perform pulse laser deposition on the mask substrate to obtain a blank mask with a corresponding mask material layer;
S12，检测所述空白掩模版的性能是否达到目标；S12, detect whether the performance of the blank mask reaches the target;
S13，在检测到所述空白掩模版的性能未达标时，根据检测结果选择相应的激光表面处理方式，在所述工艺机台上对所述空白掩模版进行激光表面处理，以修整所述掩膜材料层的表面，或者去除所述掩膜材料层并修整所述掩模基板的表面。S13, when it is detected that the performance of the blank mask does not meet the standard, select the corresponding laser surface treatment method according to the detection results, and perform laser surface treatment on the blank mask on the process machine to trim the mask. The surface of the film material layer, or the mask material layer is removed and the surface of the mask substrate is trimmed.
上述的步骤S1和步骤S2与第二实施例相同，在此不再赘述。The above steps S1 and S2 are the same as those in the second embodiment and will not be described again.
在步骤S0中提供的待废弃的掩模版可以是任意需要被废弃的掩模版。这些掩模板废弃的原因可以有以下几种情况：(1)因掩模版被使用多次后性能降低(例如特征尺寸CD值降低等)而无法继续使用，需要进行废弃；(2)对空白掩模版进行图案化以制造具有图案的掩模版时，因各种原因使得制出的具有图案的掩模版不合格而需要废弃；(3)制造的空白掩模版本身因其表面有缺陷需要被废弃；(4)在制造或修复掩模版制作过程中发现制造的光掩模版上有难以修复的图案缺陷，需要将其作为不合格品废弃。The reticle to be discarded provided in step S0 may be any reticle that needs to be discarded. The reasons for the discarding of these masks can be as follows: (1) The performance of the mask is reduced after being used many times (such as the feature size CD value is reduced, etc.) and it cannot be used anymore and needs to be discarded; (2) The blank mask needs to be discarded; When the template is patterned to produce a patterned mask, the patterned mask produced is unqualified due to various reasons and needs to be discarded; (3) the manufactured blank mask itself has defects on the surface and needs to be discarded; (4) During the process of manufacturing or repairing the mask, it is found that the manufactured photomask has pattern defects that are difficult to repair, and it needs to be discarded as a defective product.
基于此，本实施例中，在步骤S0中提供的待废弃的掩模版可分为以下6种类型：(1)待废弃的掩模版包括掩模基板、位于掩模基板上的无图案的掩膜材料层(包括无图案的至少一层金属膜等)及位于掩膜材料层上的无图案的光刻胶；(2)待废弃的掩模版包括掩模基板、位于掩模基板上的有图案的掩膜材料层(包括有图案的至少一层金属膜等)及位于掩膜材料层上的有图案的光刻胶；(3)待废弃的掩模版包括掩模基板、位于掩模基板上的有图案的掩膜材料层(包括有图案的至少一层金属膜等)；(4)待废弃的掩模版包括掩模基板及位于掩模基板上的无图案的掩膜材料层(包括无图案的相移膜和无图案的至少一层金属膜)及位于掩膜材料层上的无图案的光刻胶；(5)待废弃的掩模版包括掩模基板、位于掩模基板上的有图案的掩膜材料层(包括有图案或无图案的相移膜和有图案的至少一层金属膜)及位于掩膜材料层上的有图案的光刻胶；(6)待废弃的掩模版包括掩模基板、位于掩模基板上的掩膜材料层(包括有图案或无图案的相移膜和有图案的至少一层金属膜)。其中，上述的金属膜可以包括遮光膜及减反射膜等叠层。Based on this, in this embodiment, the masks to be discarded provided in step S0 can be divided into the following six types: (1) The masks to be discarded include a mask substrate and an unpatterned mask located on the mask substrate. The film material layer (including at least one layer of metal film without pattern, etc.) and the patternless photoresist located on the mask material layer; (2) The mask to be discarded includes the mask substrate and the patterned photoresist located on the mask substrate. The patterned mask material layer (including at least one patterned metal film, etc.) and the patterned photoresist located on the mask material layer; (3) The mask to be discarded includes the mask substrate and the mask substrate. A patterned mask material layer (including at least one patterned metal film, etc.) on the mask; (4) The mask to be discarded includes a mask substrate and an unpatterned mask material layer located on the mask substrate (including An unpatterned phase shift film and an unpatterned at least one metal film) and an unpatterned photoresist located on the mask material layer; (5) The mask to be discarded includes a mask substrate, a photoresist located on the mask substrate A patterned mask material layer (including a patterned or unpatterned phase shift film and a patterned at least one metal film) and a patterned photoresist located on the mask material layer; (6) Masks to be discarded The template includes a mask substrate and a mask material layer (including a patterned or unpatterned phase shift film and at least one patterned metal film) located on the mask substrate. Wherein, the above-mentioned metal film may include a stack of light-shielding films and anti-reflection films.
作为一种示例，请参考图2所示，在步骤S0中提供的待废弃的掩模版是需要废弃的二元掩模版(Binary Blankmask)，其具体包括自下而上依次层叠的掩模基板101(可以是透明基板)、背减反膜103、遮光膜104和减反膜105。其中，背减反膜103、遮光膜104和减反膜105三层膜为位于掩模基板100上的掩膜材料层，且有背减反膜103、遮光膜104和减反膜105堆叠的区域不透光，无背减反膜103、遮光膜104和减反膜105堆叠的区域透光，从而形成图案。遮光膜104可以包括CrN、CrC及CrCN中的一种，背减反膜103和减反膜105可以包括CrO、CrON及CrCON中的一种。As an example, please refer to FIG. 2 . The mask to be discarded provided in step S0 is a binary blankmask that needs to be discarded, which specifically includes mask substrates 101 stacked sequentially from bottom to top. (can be a transparent substrate), back anti-reflection film 103, light-shielding film 104 and anti-reflection film 105. Among them, the three layers of back anti-reflection film 103, light-shielding film 104 and anti-reflection film 105 are mask material layers located on the mask substrate 100, and the back anti-reflection film 103, light-shielding film 104 and anti-reflection film 105 are stacked The area is opaque, and the area without the stack of back anti-reflection film 103, light-shielding film 104 and anti-reflection film 105 is light-transmitting, thereby forming a pattern. The light-shielding film 104 may include one of CrN, CrC, and CrCN, and the back anti-reflection film 103 and the anti-reflection film 105 may include one of CrO, CrON, and CrCON.
作为另一种示例，请参考图3所示，在步骤S0中提供的待废弃的掩模版是需要废弃的相移掩模版(Phase Shift Blankmask)，其具体包括自下而上依次层叠的掩模基板101(可以是透明基板)、相移膜102、背减反膜103、遮光膜104和减反膜105。其中，相移膜102、背减反膜103、遮光膜104和减反膜105组成掩膜材料层，且有背减反膜103、遮光膜104和减反膜105堆叠的区域不透光，无背减反膜103、遮光层104和减反膜105堆叠的区域透光，从而形成图案。相移膜102的材料可以包括Cr的化合物(例如铬氧化物、铬氮化物或铬氧氮化物等)、MoSi、MoSi化合物(例如MoSiON、MoSiCON、MoSiN、MoSiCN或MoSiCO等)中的至少一种。As another example, please refer to Figure 3. The mask to be discarded provided in step S0 is a phase shift mask (Phase Shift Blankmask) that needs to be discarded, which specifically includes masks stacked sequentially from bottom to top. The substrate 101 (which may be a transparent substrate), the phase shift film 102, the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105. Among them, the phase shift film 102, the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 form a mask material layer, and the area where the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 are stacked is not light-transmitting, The area where the back-less anti-reflection film 103, the light-shielding layer 104 and the anti-reflection film 105 are stacked transmits light, thereby forming a pattern. The material of the phase shift film 102 may include at least one of Cr compounds (such as chromium oxide, chromium nitride, or chromium oxynitride, etc.), MoSi, and MoSi compounds (such as MoSiON, MoSiCON, MoSiN, MoSiCN, or MoSiCO, etc.) .
总结而言，无论步骤S0中提供何种掩模版作为待废弃的掩模版，其整体上的结构均包括掩模基板和位于掩模基板上的掩膜材料层，该掩模基板包括石英基板、碱石灰基板和硼硅酸盐基板中的任意一种。步骤S0需要将位于掩模基板上的掩膜材料层去除，并保证回收得到的掩模基板的顶面平坦度(或者说表面粗糙度)能够达到用于制造新的空白掩模版的要求。In summary, no matter what mask is provided as the mask to be discarded in step S0, its overall structure includes a mask substrate and a mask material layer located on the mask substrate. The mask substrate includes a quartz substrate, Either soda lime substrate or borosilicate substrate. Step S0 requires removing the mask material layer located on the mask substrate, and ensuring that the flatness (or surface roughness) of the top surface of the recovered mask substrate can meet the requirements for manufacturing a new blank mask.
应当理解的是，在步骤S0中可以采用任意合适的激光表面处理方式来将待废弃的掩模版的掩模基板上的所有膜层去除，并使得回收的掩模基板的顶面性能达到用于制造新的空白掩模版的要求。It should be understood that in step S0, any suitable laser surface treatment method can be used to remove all film layers on the mask substrate of the mask to be discarded, and make the top surface performance of the recycled mask substrate reach the level used for Requirements for manufacturing new blank reticles.
作为一种示例，在步骤S0中所使用的激光表面处理方式选自子步骤S13中能够使用的激光表面处理方式。As an example, the laser surface treatment method used in step S0 is selected from the laser surface treatment methods that can be used in sub-step S13.
具体地，请结合图11和图12所示，在步骤S0中，先采用第一激光对待废弃的掩模版进行激光去膜，以去除其掩模基板上的掩膜材料层，之后采用第二激光对掩模基板的表面进行激光抛光，使掩模基板的表面粗糙度达到制造新的空白掩模版的要求。可选地，在步骤S0中，采用子步骤S12的方式，在对待废弃的掩模版进行激光去膜的过程，在线实时对待废弃的掩模版进行表面形貌检测，从而根据该检测结果在线实时调整对掩模基板的表面进行激光去膜的工艺参数(例如调整第一激光的波长、功率、扫描路径、焦距、焦面等等)。进一步可选地，在步骤S0中，在对掩模基板进行激光抛光的过程，在线实时对掩模基板进行表面形貌检测，从而根据该检测结果在线实时调整对掩模基板的表面进行激光抛光的工艺参数(例如调整第一激光的波长、功率、扫描路径、焦距、焦面等等)。Specifically, as shown in FIG. 11 and FIG. 12 , in step S0 , the first laser is used to laser remove the mask plate to be discarded to remove the mask material layer on the mask substrate, and then the second laser is used to remove the mask material layer on the mask substrate. The laser polishes the surface of the mask substrate so that the surface roughness of the mask substrate meets the requirements for manufacturing a new blank mask. Optionally, in step S0, sub-step S12 is used to detect the surface topography of the mask to be discarded online in real time during the process of laser removal of the mask to be discarded, so as to make online real-time adjustments based on the detection results. Process parameters for laser removal of the film from the surface of the mask substrate (such as adjusting the wavelength, power, scanning path, focal length, focal plane, etc. of the first laser). Further optionally, in step S0, during the process of laser polishing the mask substrate, the surface topography of the mask substrate is detected online in real time, so that the laser polishing of the surface of the mask substrate is adjusted online in real time based on the detection results. process parameters (such as adjusting the wavelength, power, scanning path, focal length, focal plane, etc. of the first laser).
由此，在步骤S0中根据需要依次执行激光去膜、表面形貌检测和激光抛光等过程并循环这些过程后，可以保证回收的掩模基板可以直接应用于新的空白掩模版的制造，缩短制造周期，降低空白掩模版的制造成本。Therefore, in step S0, processes such as laser film removal, surface topography detection, and laser polishing are sequentially performed as needed and these processes are cycled. It can be ensured that the recycled mask substrate can be directly used in the manufacture of new blank masks, shortening the time required. manufacturing cycle and reduce the manufacturing cost of blank masks.
在步骤S0提供达到要求的掩模基板后，先执行步骤S1(即循环执行步骤S11～S13)，进而基于回收得到的掩模基板制造出性能符合要求的新的空白掩模版，继而再执行步骤S2，对空白掩模版进行激光直写。After step S0 provides a mask substrate that meets the requirements, step S1 is first performed (that is, steps S11 to S13 are executed in a loop), and then a new blank mask plate with performance that meets the requirements is manufactured based on the recovered mask substrate, and then steps are performed. S2, perform laser direct writing on the blank mask.
进一步地，步骤S0中对待废弃的掩模版进行激光表面处理的方式，与子步骤S13中对未达标的新的空白掩模版进行激光表面处理的方式相同。但是步骤S0和子步骤S13中的激光表面处理的膜层深度可以不同。Furthermore, the method of performing laser surface treatment on the mask to be discarded in step S0 is the same as the method of performing laser surface treatment on the new blank mask that does not meet the standard in sub-step S13. However, the film depth of the laser surface treatment in step S0 and sub-step S13 may be different.
还应当理解的是，步骤S0和子步骤S13中的激光去膜和激光抛光工艺与第二实施例中的激光去膜和激光抛光工艺均基本相同，因此在此不再详述。It should also be understood that the laser film removal and laser polishing processes in step S0 and sub-step S13 are basically the same as the laser film removal and laser polishing processes in the second embodiment, and therefore will not be described in detail here.
同样地，在子步骤S12中一旦检测到新的空白掩模版的性能未达标，该未达标的新的空白掩模版就可以被视作是待废弃的掩模版，进而可以从步骤S0中的激光表面处理选择全部的流程或者部分流程来作为子步骤S13，以按照所选的流程(即循环执行步骤S11～步骤S13)对未达标的新的空白掩模版进行返工或修复，直至新的空白掩模版的性能达标。Similarly, once it is detected in sub-step S12 that the performance of the new blank mask does not meet the standard, the new blank mask that does not meet the standard can be regarded as a mask to be discarded, and then the laser in step S0 can be used. For surface treatment, all or part of the process is selected as sub-step S13, so as to rework or repair the new blank mask that does not meet the standard according to the selected process (i.e., loop execution of steps S11 to S13) until the new blank mask is The performance of the template is up to standard.
也可以说，本实施例的制造方法相比第二实施例，由于开始时提供的是待废弃的掩模版，因此从子步骤S13开始整个工艺过程，即在首次脉冲激光沉积之前先执行一次子步骤S13(即步骤S0)，将待废弃的掩模版处理为能够用于新的空白掩模版制造的掩模基板，之后就可以循环执行子步骤S11～S13直至制造的空白掩模版的性能达到目标，由此降低新的空白掩模版的制造成本，且保证其制造良率，进而降低了具有所需图案的掩模版的制造成本，保证了具有所需图案的掩模版的制造良率。It can also be said that compared with the second embodiment, the manufacturing method of this embodiment is provided with a mask to be discarded at the beginning, so the entire process starts from sub-step S13, that is, a sub-step is performed before the first pulse laser deposition. Step S13 (i.e. step S0), process the mask to be discarded into a mask substrate that can be used for manufacturing a new blank mask, and then the sub-steps S11 to S13 can be executed in a loop until the performance of the manufactured blank mask reaches the target. , thereby reducing the manufacturing cost of the new blank mask and ensuring its manufacturing yield, thereby reducing the manufacturing cost of the mask with the required pattern and ensuring the manufacturing yield of the mask with the required pattern.
此外，用于实现本实施例的掩模版的制造方法的制造系统可以与第二实施例中的掩模版的制造系统相同，在此不再赘述。In addition, the manufacturing system used to implement the mask manufacturing method in this embodiment may be the same as the mask manufacturing system in the second embodiment, and will not be described again here.
总结而言，本实施例的掩模版的制造方法，由于是对待废弃的掩模版的回收再利用，因此相比第二实施例的方案，能够进一步降低空白掩模版的制造成本。In summary, the mask manufacturing method of this embodiment can further reduce the manufacturing cost of the blank mask compared to the solution of the second embodiment because it recycles discarded masks.
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于本发明技术方案的保护范围。The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention in any way. Any changes or modifications made by those of ordinary skill in the field of the present invention based on the above disclosures fall within the protection scope of the technical solution of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310962116.2ACN116931361A (en) | 2023-06-16 | 2023-06-16 | Blank mask manufacturing method and system |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310720627.3ACN116466539B (en) | 2023-06-16 | 2023-06-16 | Mask manufacturing method and system |
| CN202310962116.2ACN116931361A (en) | 2023-06-16 | 2023-06-16 | Blank mask manufacturing method and system |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310720627.3ADivisionCN116466539B (en) | 2023-06-16 | 2023-06-16 | Mask manufacturing method and system |
| Publication Number | Publication Date |
|---|---|
| CN116931361Atrue CN116931361A (en) | 2023-10-24 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310962116.2APendingCN116931361A (en) | 2023-06-16 | 2023-06-16 | Blank mask manufacturing method and system |
| CN202310962129.XAPendingCN116841117A (en) | 2023-06-16 | 2023-06-16 | Mask substrate regeneration method and system |
| CN202310720627.3AActiveCN116466539B (en) | 2023-06-16 | 2023-06-16 | Mask manufacturing method and system |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310962129.XAPendingCN116841117A (en) | 2023-06-16 | 2023-06-16 | Mask substrate regeneration method and system |
| CN202310720627.3AActiveCN116466539B (en) | 2023-06-16 | 2023-06-16 | Mask manufacturing method and system |
| Country | Link |
|---|---|
| CN (3) | CN116931361A (en) |
| WO (1) | WO2024255177A1 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024255177A1 (en)* | 2023-06-16 | 2024-12-19 | 上海传芯半导体有限公司 | Mask manufacturing method and system |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005012142A (en)* | 2003-06-23 | 2005-01-13 | Nikon Corp | Mask inspection cleaning method, mask inspection cleaning apparatus, and charged particle beam exposure apparatus |
| US7170030B2 (en)* | 2003-09-12 | 2007-01-30 | International Business Machines Corporation | Method and apparatus for repair of reflective photomasks |
| EP1877867A2 (en)* | 2005-04-21 | 2008-01-16 | 3T Technologies Limited | Methods and apparatus for the manufacture of microstructures |
| CN101981500B (en)* | 2009-01-14 | 2012-05-09 | 国家纳米科学中心 | Metal optical gray mask and manufacturing method thereof |
| US20150301444A1 (en)* | 2012-06-18 | 2015-10-22 | Indian Institute Of Technology Kanpur | Systems and methods for dry processing fabrication of binary masks with arbitrary shapes for ultra-violet laser micromachining |
| EP2896717A1 (en)* | 2014-01-15 | 2015-07-22 | Nanotechplasma SARL | Laser direct synthesis and deposit of nanocomposite materials or nanostructures |
| CN105789031A (en)* | 2016-03-11 | 2016-07-20 | 中国建筑材料科学研究总院 | Mask for laser direct writing and etching method of mask |
| CN205542715U (en)* | 2016-03-11 | 2016-08-31 | 中国建筑材料科学研究总院 | Laser is directly write and is used mask |
| US10816891B2 (en)* | 2016-12-14 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and fabrication method therefor |
| CN113458609A (en)* | 2021-05-27 | 2021-10-01 | 上海传芯半导体有限公司 | Processing method for regenerating mask light-transmitting substrate and manufacturing method for mask substrate |
| CN116931361A (en)* | 2023-06-16 | 2023-10-24 | 上海传芯半导体有限公司 | Blank mask manufacturing method and system |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024255177A1 (en)* | 2023-06-16 | 2024-12-19 | 上海传芯半导体有限公司 | Mask manufacturing method and system |
| Publication number | Publication date |
|---|---|
| CN116466539A (en) | 2023-07-21 |
| CN116841117A (en) | 2023-10-03 |
| CN116466539B (en) | 2023-09-22 |
| WO2024255177A1 (en) | 2024-12-19 |
| Publication | Publication Date | Title |
|---|---|---|
| US7759606B2 (en) | Method and apparatus for repair of reflective photomasks | |
| CN100375238C (en) | Exposure equipment and device manufacturing method using the exposure equipment | |
| Venkatakrishnan et al. | Laser writing techniques for photomask fabrication using a femtosecond laser | |
| US20050084767A1 (en) | Method and system for reparing defected photomasks | |
| JPS6161670B2 (en) | ||
| CN116466539B (en) | Mask manufacturing method and system | |
| CN212858217U (en) | Laser cutting optical system integrating coaxial vision | |
| JP2003245784A (en) | Laser processing method, laser processing apparatus, and three-dimensional structure | |
| CN116160121A (en) | A Quartz Vibrating Beam Processing Method Based on Frequency Doubled Bessel Laser Selective Etching | |
| JP2799080B2 (en) | Laser processing method and apparatus, transmission type liquid crystal element, wiring pattern defect correcting method and apparatus | |
| JP2002160079A (en) | Thin film ablation processing method and apparatus | |
| JP2006216820A (en) | Laser beam machining method, laser processing apparatus and crystallization apparatus | |
| CN103048888B (en) | Photoetching method and system using metal glass as photoresist | |
| TW201109832A (en) | Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank | |
| KR102832819B1 (en) | High-performance EUV microscope device with free-form illumination system structure | |
| Venkatakrishnan et al. | Femtosecond laser ablation of thin films for the fabrication of binary photomasks | |
| Haight et al. | High resolution material ablation and deposition with femtosecond lasers and applications to photomask repair | |
| Wagner et al. | MARS2: An advanced femtosecond laser mask repair tool | |
| US20070032050A1 (en) | Mask for sequential lateral solidification and method of manufacturing the same | |
| KR102830685B1 (en) | High-performance EUV microscope device with free-form illumination system structure with elliptical lens applied | |
| JP2599439B2 (en) | Laser trimming device and trimming method | |
| JP3050556B2 (en) | Defect repair method such as emulsion mask | |
| CN220305620U (en) | Laser direct writing device | |
| CN120395163A (en) | A two-dimensional material anti-oxidation processing method based on ultra-stealth cutting | |
| WO2007039895A2 (en) | Method and apparatus for removing contaminants off a reticle |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |