技术领域technical field
本发明涉及氮化铝晶体生长加工领域，具体涉及一种减小AlN晶体加工时切割应力的方法。The invention relates to the field of aluminum nitride crystal growth and processing, in particular to a method for reducing cutting stress during AlN crystal processing.
背景技术Background technique
AlN晶体因具有超宽的禁带宽度(6.2eV)、高热导率(3.2W·cm-1K-1)、高电阻率及高表面声速(5600-6000m/s)等优异的物理性质，目前逐渐在激光器、HEMT、光电子器件和声表面波器件中得到广泛应用。目前现有技术制备的AlN晶体内部容易出现缺陷，当外部应力源作用于AlN晶体时，其内部可能会出现裂纹扩展，从而导致晶片开裂，难以获得较大尺寸的AlN晶体。常见的外部应力源包括晶片切割时金刚石线的高速运转对切割样品带来的横向摩擦力，当金刚石线与AlN晶体接触时，晶体所承受的应力最大。如果晶体的结晶质量不高，如缺陷密度较大或内部存在微小裂纹，当承受外部应力较大时，可能会造成晶片的拉裂。AlN crystal has excellent physical properties such as ultra-wide band gap (6.2eV), high thermal conductivity (3.2W·cm-1 K-1 ), high resistivity and high surface sound velocity (5600-6000m/s), At present, it has been widely used in lasers, HEMTs, optoelectronic devices and surface acoustic wave devices. At present, AlN crystals prepared by the existing technology are prone to defects inside. When an external stress source acts on the AlN crystal, cracks may propagate inside the AlN crystal, resulting in cracking of the wafer, making it difficult to obtain larger-sized AlN crystals. Common external stress sources include the lateral friction force on the cutting sample brought by the high-speed operation of the diamond wire during wafer cutting. When the diamond wire is in contact with the AlN crystal, the crystal bears the greatest stress. If the crystalline quality of the crystal is not high, such as a large defect density or tiny cracks inside, when subjected to a large external stress, the wafer may be cracked.
针对上述切割应力带来的晶片破裂问题，现有技术常采用施加大量的切割液进行润滑或者增大砂浆流量的方式进行缓解，虽然切割液和砂浆的润滑能在一定程度上减小金刚石线与AlN晶体之间的磨擦力，但仍不足以克服切割时的大部分应力，因此晶片受损仍是晶体切割过程中亟待解决的问题。Aiming at the wafer cracking problem caused by the above-mentioned cutting stress, the existing technology often uses a large amount of cutting fluid to lubricate or increase the flow rate of mortar to alleviate the problem, although the lubrication of cutting fluid and mortar can reduce the contact between diamond wire and diamond wire to a certain extent. The friction between AlN crystals is still not enough to overcome most of the stress during cutting, so wafer damage is still an urgent problem to be solved in the crystal cutting process.
发明内容Contents of the invention
针对AlN晶体切割过程中，晶体与金刚石线接触时高强应力导致晶体开裂的难题，本发明提供一种减小AlN晶体加工时切割应力的方法。本发明通过在晶体外侧设置缓冲层，使得金刚石线与晶体样品接触时应力经过晶体外侧缓冲层逐渐过渡到晶体，应力达到最大释放，避免了直接应力对晶体造成的损伤，能够简单有效地保护晶体，防止晶体的开裂，其中缓冲层由外向内由不同硬度的材料构成。此外，缓冲层的存在避免了切割线与晶体的直接接触，降低了断线的概率，对切割出完整的AlN晶圆具有重要作用。Aiming at the problem that high stress causes crystal cracking when the crystal is in contact with a diamond wire during the AlN crystal cutting process, the invention provides a method for reducing the cutting stress during AlN crystal processing. The present invention arranges a buffer layer outside the crystal, so that when the diamond wire contacts the crystal sample, the stress gradually transitions to the crystal through the buffer layer outside the crystal, and the stress reaches the maximum release, avoiding the damage to the crystal caused by direct stress, and can simply and effectively protect the crystal , to prevent the cracking of the crystal, wherein the buffer layer is composed of materials with different hardness from the outside to the inside. In addition, the existence of the buffer layer avoids the direct contact between the cutting wire and the crystal, reduces the probability of disconnection, and plays an important role in cutting out a complete AlN wafer.
为实现上述目的，本发明提供以下技术方案：To achieve the above object, the present invention provides the following technical solutions:
一种减小AlN晶体加工时切割应力的方法，包括如下步骤：A method for reducing cutting stress during AlN crystal processing, comprising the steps of:
S1：选取竖直放置的中空圆柱体，将AlN晶体置于所述中空圆柱体中心位置，所述AlN晶体高度小于所述中空圆柱体高度；然后将所述中空圆柱体底部和AlN晶体均通过石蜡粘接到金属板上；S1: Select a vertically placed hollow cylinder, place the AlN crystal at the center of the hollow cylinder, the height of the AlN crystal is smaller than the height of the hollow cylinder; then pass the bottom of the hollow cylinder and the AlN crystal through Paraffin bonded to the metal plate;
S2：向步骤S1的中空圆柱体内灌注胶水，使胶水完全包裹晶体；胶水凝固后，将金属板底部加热，石蜡融化后金属板脱落，得到待切割样品，所述中空圆柱体的莫氏硬度比所述胶水凝固后的莫氏硬度小2-3；S2: Pour glue into the hollow cylinder in step S1, so that the glue completely wraps the crystal; after the glue solidifies, heat the bottom of the metal plate, and the metal plate falls off after the paraffin melts, and the sample to be cut is obtained. The Mohs hardness ratio of the hollow cylinder is The Mohs hardness of the glue after solidification is 2-3 smaller;
S3：将步骤S2的待切割样品横向置于切割机上，沿纵剖面进行切割，得到边部带有缓冲层的AlN晶片；S3: Place the sample to be cut in step S2 horizontally on a cutting machine, and cut along the longitudinal section to obtain an AlN wafer with a buffer layer on the edge;
具体操作步骤为：The specific operation steps are:
由上至下将所述纵剖面分为入刀区、中间区和出刀区，三者的最大高度相同，AlN晶体至少位于入刀区和中间区；所述入刀区、中间区、出刀区的进给速度分别为5-6mm/h、7-8mm/h、10mm/h；From top to bottom, the longitudinal section is divided into the knife-entry area, the middle area and the knife-exit area. The maximum heights of the three are the same, and the AlN crystal is at least located in the knife-entry area and the middle area; The feed speed of the knife area is 5-6mm/h, 7-8mm/h, 10mm/h respectively;
S4：将步骤S3的边部带有缓冲层的AlN晶片进行边部修整，得到规整的AlN晶圆。S4: trimming the edge of the AlN wafer with the buffer layer on the edge of step S3 to obtain a regular AlN wafer.
优选的，步骤S1所述中空圆柱体的材质选自聚氯乙烯、聚四氟乙烯或聚丙烯；所述金属板为铁板或铜板。Preferably, the material of the hollow cylinder in step S1 is selected from polyvinyl chloride, polytetrafluoroethylene or polypropylene; the metal plate is an iron plate or a copper plate.
优选的，步骤S1中，所述中空圆柱体的内径与AlN晶体最大外径之间的比值为12/11-6/5。Preferably, in step S1, the ratio between the inner diameter of the hollow cylinder and the maximum outer diameter of the AlN crystal is 12/11-6/5.
优选的，步骤S2中所述胶水为粘晶棒专用胶；所述胶水凝固后莫氏硬度为5-6.5。Preferably, the glue described in step S2 is a special glue for bonding die sticks; the Mohs hardness of the glue is 5-6.5 after solidification.
进一步优选的，步骤S2灌注胶水的具体操作为：将粘硅棒专用胶的A胶与B胶按1:1混合均匀后倒入步骤S1的中空圆柱体内，直至完全覆盖AlN晶体，并使得灌注胶水后的中空圆柱体的胶水表面保持水平，然后冷却40分钟。Further preferably, the specific operation of perfusing glue in step S2 is: mix glue A and glue B of the special glue for sticking silicon rods at a ratio of 1:1 and pour them into the hollow cylinder in step S1 until the AlN crystal is completely covered, and make the perfusion The glued surface of the hollow cylinder after gluing was kept level and then cooled for 40 minutes.
优选的，步骤S2中所述加热的温度为100-120℃，加热时间为10min。Preferably, the heating temperature in step S2 is 100-120° C., and the heating time is 10 minutes.
优选的，步骤S2中金属板脱落后，将待切割样品中高于胶水表面的中空圆柱体削去，以免后期切割时掉料皮导致卡线。Preferably, after the metal plate falls off in step S2, the hollow cylinder higher than the surface of the glue in the sample to be cut is cut off, so as to avoid the line jam caused by the material falling off during the later cutting.
优选的，步骤S3中所述切割机为金刚石线切割机。Preferably, the cutting machine in step S3 is a diamond wire cutting machine.
本发明中，AlN晶体是从上向下进行切割，切割线为直线，利用切割线与晶体之间的摩擦力进行切割。未加缓冲层时进行切割，晶圆与切割线的接触是从一个点开始，相应的应力来源也是从该点开始，因此应力极易扩散到晶体内部；设置缓冲层后，当切割到AlN晶体上时，晶圆与切割线的接触是从晶体与缓冲层之间的面开始，因此应力大部分释放在胶层与晶圆的结合面处，这样会避免应力传递到晶体内部而导致晶体开裂。In the present invention, the AlN crystal is cut from top to bottom, the cutting line is a straight line, and the cutting is performed by using the friction force between the cutting line and the crystal. When cutting without a buffer layer, the contact between the wafer and the cutting line starts from a point, and the corresponding stress source also starts from this point, so the stress easily diffuses into the crystal; after setting the buffer layer, when cutting the AlN crystal When it is on, the contact between the wafer and the dicing line starts from the surface between the crystal and the buffer layer, so most of the stress is released at the bonding surface between the glue layer and the wafer, which will prevent the stress from being transmitted to the inside of the crystal and cause the crystal to crack .
本发明具有以下有益技术效果:The present invention has the following beneficial technical effects:
(1)本发明通过在AlN晶体外侧设置缓冲层的方法来避免直接应力对晶体造成损伤；当切割线与晶体样品接触时产生高强应力，晶体外侧的缓冲层能够逐渐将应力释放，并将应力逐渐过渡到晶体上，能够简单有效地保护晶体，防止晶体开裂，有利于切割出完整的AlN晶圆。(1) The present invention avoids direct stress from causing damage to the crystal by setting a buffer layer on the outside of the AlN crystal; when the cutting line is in contact with the crystal sample, high-strength stress is generated, and the buffer layer on the outside of the crystal can gradually release the stress and reduce the stress. Gradually transition to the crystal, which can simply and effectively protect the crystal, prevent the crystal from cracking, and facilitate cutting out a complete AlN wafer.
(2)本发明的方法中缓冲层的存在避免了切割线与晶体的直接接触，降低了切割线断线的概率，使得切割高效进行。(2) The existence of the buffer layer in the method of the present invention avoids the direct contact between the cutting wire and the crystal, reduces the probability of cutting wire breaking, and makes the cutting efficient.
附图说明Description of drawings
图1为实施例1中聚氯乙烯管与AlN晶体用石蜡粘接到铁板上的图片。FIG. 1 is a picture of a polyvinyl chloride pipe and an AlN crystal bonded to an iron plate with paraffin in Example 1.
图2为实施例1中对聚氯乙烯管和晶体灌胶后的图片。FIG. 2 is a picture of the polyvinyl chloride pipe and the crystal after being filled with glue in Example 1.
图3为实施例1中将带有缓冲层的晶体固定到切割机上的实物图。FIG. 3 is a physical diagram of fixing the crystal with the buffer layer on the cutting machine in Example 1. FIG.
图4为实施例1中切割进程中纵剖面的区域划分。Fig. 4 is the regional division of the longitudinal section in the cutting process in embodiment 1.
图5为实施例1中切割完成后的AlN晶圆图片。FIG. 5 is a picture of the AlN wafer after cutting in Example 1.
图6为对比例1中切割前的AlN晶锭图片。FIG. 6 is a picture of the AlN crystal ingot before cutting in Comparative Example 1.
图7为对比例1中切割后导致晶体开裂的图片。FIG. 7 is a picture of crystal cracking after cutting in Comparative Example 1. FIG.
图8为对比例2中没有调整切割工艺前切割出的AlN晶圆图片。FIG. 8 is a picture of the AlN wafer cut before the cutting process was not adjusted in Comparative Example 2.
具体实施方式Detailed ways
下面结合具体实施例来进一步描述本发明，本发明的优点和特点将会随着描述而更为清楚。但实施例仅是范例性的，并不对本发明的范围构成任何限制。本领域技术人员应该理解的是，在不偏离本发明的精神和范围下可以对本发明技术方案的细节和形式进行修改或替换，但这些修改和替换均落入本发明的保护范围内。The present invention will be further described below in conjunction with specific embodiments, and the advantages and characteristics of the present invention will become clearer along with the description. However, the examples are merely exemplary and do not limit the scope of the present invention in any way. Those skilled in the art should understand that the details and forms of the technical solutions of the present invention can be modified or replaced without departing from the spirit and scope of the present invention, but these modifications and replacements all fall within the protection scope of the present invention.
实施例1Example 1
一种减小AlN晶体加工时切割应力的方法，包括如下步骤：A method for reducing cutting stress during AlN crystal processing, comprising the steps of:
S1：选取最大外径为52mm、高度为10mm的圆柱状AlN晶锭进行切割；并选择内径为60mm、高度为15mm、厚度为3mm的聚氯乙烯管中空圆柱体作为切割辅助件。S1: Select a cylindrical AlN ingot with a maximum outer diameter of 52 mm and a height of 10 mm for cutting; and select a hollow cylinder of a polyvinyl chloride tube with an inner diameter of 60 mm, a height of 15 mm, and a thickness of 3 mm as a cutting aid.
如图1所示，将聚氯乙烯管和AlN晶体的底部均通过石蜡粘接到尺寸为100mm×100mm的铁板上，AlN晶体位于聚氯乙烯管的中心。As shown in Figure 1, both the bottom of the polyvinyl chloride tube and the AlN crystal were bonded to an iron plate with a size of 100mm×100mm by paraffin, and the AlN crystal was located in the center of the polyvinyl chloride tube.
S2:将粘硅棒专用胶的A胶与B胶按照1:1混合均匀后倒入聚氯乙烯管与AlN晶体之间的缝隙中，直至完全覆盖住晶体顶端为止，并使胶水表面水平(如图2所示)，冷却固化40分钟；然后将铁板底部在120℃下加热10分钟，石蜡融化后，铁板自动脱落，得到待切割样品。将上述待切割样品中超出固化胶水表面的聚氯乙烯管及高于晶体部分的胶层削去，以备后续切割。S2: Mix glue A and glue B of the special glue for sticking silicon rods evenly according to 1:1, then pour it into the gap between the polyvinyl chloride tube and the AlN crystal until it completely covers the top of the crystal, and make the surface of the glue level ( As shown in Figure 2), cooled and solidified for 40 minutes; then heated the bottom of the iron plate at 120°C for 10 minutes, after the paraffin melted, the iron plate fell off automatically, and the sample to be cut was obtained. In the sample to be cut above, the polyvinyl chloride tube beyond the surface of the cured glue and the glue layer above the crystal part are cut off for subsequent cutting.
S3：如图3所示，将削去多余料皮的待切割样品横向置于金刚石线切割机上，沿纵剖面进行切割。如图4中所示，由上至下将所述纵剖面分为入刀区、中间区和出刀区，三者的最大高度相同，入刀区进给速度需要调整成5-6mm/h，中间区为8mm/h，出刀区为10mm/h。沿聚氯乙烯管切割面进行切割，得到由外向内依次为聚氯乙烯管、胶水、AlN晶体的AlN晶片，其中聚氯乙烯管和胶水构成缓冲层。S3: As shown in Figure 3, place the sample to be cut with the excess skin removed on the diamond wire cutting machine horizontally, and cut along the longitudinal section. As shown in Figure 4, the longitudinal section is divided into the entry area, middle area and exit area from top to bottom. The maximum height of the three is the same, and the feed speed of the entry area needs to be adjusted to 5-6mm/h , the middle zone is 8mm/h, and the knife-out zone is 10mm/h. Cut along the cutting surface of the polyvinyl chloride pipe to obtain an AlN wafer consisting of polyvinyl chloride pipe, glue, and AlN crystal from outside to inside, wherein the polyvinyl chloride pipe and glue constitute a buffer layer.
S4：将上述得到的AlN晶片进行边部修整，即得规整的AlN晶圆，如图5中所示。S4: trimming the edge of the AlN wafer obtained above to obtain a regular AlN wafer, as shown in FIG. 5 .
本实施例通过在晶体外侧设置缓冲层，将线与样品接触时产生的高强应力首先释放在晶体外侧的缓冲层中，继而逐渐过渡到晶体上，来避免直接应力对晶体造成的损伤。主要通过以下几点实现本发明目的：1)如图1所示，首先用石蜡将高于晶体5-7mm的聚氯乙烯管与AlN晶体粘接到铁板上，晶体位于聚氯乙烯管中心位置。2)如图2所示，石蜡凝固后进行灌胶，胶水为粘晶棒专用AB胶，也可采用其他硬度在5-6之间的固化胶，硬度较小的固化后的胶液能够将切割张力逐渐过渡到晶体上，起到缓冲作用。3)胶水凝固后，将铁片加热到120℃，石蜡熔化即可取下铁板，如图3所示，将脱掉铁板的带有缓冲层的晶体固定到切割机上，进行切割工作。4)如图4所示，增加缓冲层后的晶体纵剖面以相同高度划分为三部分，分别为入刀区、中间区、出刀区，入刀区内，由于切割线最先与缓冲层和晶体接触，进给速度不宜过快，在5-6mm/h最佳；中间区内，由于入刀区起到了过渡作用，中间区可以适当进行加速切割，但较硬的晶体部分比例较大，不宜过快，进给速度可控制在7-8mm/h范围内；出刀区中晶体所占比例较小，缓冲层比例较大，切割物体较软，可再进行加速切割，速率控制在10mm/h。In this embodiment, by setting a buffer layer outside the crystal, the high-strength stress generated when the wire contacts the sample is first released in the buffer layer outside the crystal, and then gradually transitions to the crystal, so as to avoid damage to the crystal caused by direct stress. Mainly realize the object of the present invention through the following points: 1) as shown in Figure 1, at first the polyvinyl chloride pipe and the AlN crystal higher than crystal 5-7mm are bonded to the iron plate with paraffin, and the crystal is positioned at the polyvinyl chloride pipe center Location. 2) As shown in Figure 2, glue is poured after the paraffin wax is solidified. The glue is AB glue specially used for bonding crystal rods. Other curing glue with a hardness between 5 and 6 can also be used. The cured glue with a lower hardness can The cutting tension gradually transitions to the crystal, acting as a buffer. 3) After the glue is solidified, heat the iron sheet to 120°C, and the iron sheet can be removed after the paraffin melts. As shown in Figure 3, the crystal with the buffer layer that has been removed from the iron sheet is fixed on the cutting machine for cutting. 4) As shown in Figure 4, the longitudinal section of the crystal after the buffer layer is added is divided into three parts at the same height, which are the knife-entry area, the middle area, and the knife-exit area. In contact with the crystal, the feed speed should not be too fast, 5-6mm/h is the best; in the middle area, because the knife-entry area plays a transitional role, the middle area can be properly accelerated cutting, but the proportion of the harder crystal part is larger , should not be too fast, the feed speed can be controlled within the range of 7-8mm/h; the proportion of crystals in the knife exit area is small, the proportion of buffer layer is large, the cutting object is soft, and the cutting can be accelerated, and the speed is controlled at 10mm/h.
通过以上工艺能够显著提高切割效率，减小切割应力对晶体的直接损坏，切出的晶圆如图5所示，由图5可以看出晶圆内部几乎无裂纹，并且形状极为规整，没有出现晶片开裂或者破碎的现象。Through the above process, the cutting efficiency can be significantly improved, and the direct damage to the crystal caused by the cutting stress can be reduced. Chip cracking or chipping.
通过本发明的方法能够提高AlN晶体的切割质量和切割效率，采用该方法，能够将切割应力首先释放在晶体外侧的缓冲层中，从而避免直接应力对晶体造成的损伤，能够简单有效地保护晶体，防止晶体的开裂；同时缓冲层的存在避免了切割线与晶体的直接接触，降低了断线概率，能够高效切割出完整的AlN晶圆。The cutting quality and cutting efficiency of the AlN crystal can be improved by the method of the present invention. With the method, the cutting stress can be released first in the buffer layer outside the crystal, thereby avoiding damage to the crystal caused by direct stress, and can simply and effectively protect the crystal. , to prevent cracking of the crystal; at the same time, the existence of the buffer layer avoids the direct contact between the cutting line and the crystal, reduces the probability of disconnection, and can efficiently cut out a complete AlN wafer.
对比例1Comparative example 1
一种AlN晶体切割加工的方法，包括如下步骤：A method for cutting and processing AlN crystals, comprising the steps of:
S1：选取尺寸最大外径为52mm，高度为10mm的圆柱状AlN晶锭进行切割，如图6所示。S1: Select a cylindrical AlN ingot with a maximum outer diameter of 52 mm and a height of 10 mm for cutting, as shown in FIG. 6 .
S2:将晶锭通过高强度AB胶粘接到石墨块上，再将石墨块粘接到料板上。S2: Bond the crystal ingot to the graphite block with high-strength AB glue, and then bond the graphite block to the material plate.
S3：在晶体外层裹满一层AB胶，等待30分钟，胶自然冷却后，将料板装到切割机上。S3: Wrap a layer of AB glue on the outer layer of the crystal, wait for 30 minutes, after the glue cools down naturally, install the material board on the cutting machine.
S4:按照实施例1中所述方式，将所述纵剖面划分为入刀区、中间区、出刀区，入刀区进给速度需要调整成5-6mm/h，中间区为8mm/h，出刀区为10mm/h。沿纵剖面进行切割，得到AlN晶片。S4: According to the method described in embodiment 1, the longitudinal section is divided into a knife-entry area, a middle area, and a knife-exit area. The feed speed of the knife-entry area needs to be adjusted to 5-6mm/h, and the middle area is 8mm/h , the knife area is 10mm/h. Cut along the longitudinal section to obtain AlN wafers.
通过这种方法切割出的晶锭由于外侧保护层较薄，无法在外层形成有效的保护，在切割过程中往往会在晶体内部产生很大的应力，导致裂纹数激增，裂纹增多会导致晶体开裂，如图7所示，甚至形成不了完整规则的晶圆，切出的晶片破碎的话，即相当于此次切割过程失败。The ingot cut out by this method cannot form an effective protection on the outer layer due to the thin outer protective layer. During the cutting process, a large stress is often generated inside the crystal, resulting in a sharp increase in the number of cracks, and the increase in cracks will lead to cracking of the crystal. , as shown in Figure 7, even a complete and regular wafer cannot be formed, and if the cut out wafer is broken, it is equivalent to the failure of the cutting process.
对比例2Comparative example 2
一种AlN晶体切割的方法，包括如下步骤：A method for cutting AlN crystals, comprising the steps of:
S1：选取尺寸直径为52mm，高度为10mm的圆柱体AlN晶锭进行切割；并选择直径为60mm，高度为15mm，厚度3mm的聚氯乙烯管中空圆柱体作为切割辅助件。S1: Select a cylindrical AlN ingot with a diameter of 52mm and a height of 10mm for cutting; and select a hollow cylinder of a polyvinyl chloride tube with a diameter of 60mm, a height of 15mm, and a thickness of 3mm as a cutting aid.
将聚氯乙烯管和AlN晶体的底端均通过石蜡粘接到尺寸为100mm×100mm的铁板上，AlN晶体位于聚氯乙烯管的中心。Both the bottom ends of the polyvinyl chloride tube and the AlN crystal were bonded to an iron plate with a size of 100mm×100mm by paraffin, and the AlN crystal was located in the center of the polyvinyl chloride tube.
S2:将粘硅棒专用胶的A胶与B胶按照1:1混合均匀后倒入聚氯乙烯管与AlN晶体之间的缝隙中，直至完全覆盖住晶体顶端为止，并使胶水表面水平，冷却固化40分钟；然后将铁板底部在120℃下加热10分钟，石蜡融化后，铁板自动脱落，得到待切割样品，将上述待切割样品中超出固化胶水表面的聚氯乙烯管和高于晶体部分的不规则胶层削去。S2: Mix glue A and glue B of the special glue for sticking silicon rods according to 1:1, and then pour it into the gap between the polyvinyl chloride tube and the AlN crystal until it completely covers the top of the crystal, and make the surface of the glue level. Cool and solidify for 40 minutes; then heat the bottom of the iron plate at 120°C for 10 minutes, after the paraffin melts, the iron plate will fall off automatically, and the sample to be cut is obtained. The irregular glue layer of the crystal part is peeled off.
S3：然后将待切割样品横向置于切割机上以10mm/h的进给速度进行匀速纵切，得到的AlN晶片如图8中所示。S3: Then place the sample to be cut transversely on a cutting machine and perform slitting at a constant speed at a feed speed of 10 mm/h, and the obtained AlN wafer is shown in FIG. 8 .
通过这种方法切出的晶锭，因为晶锭裹胶后整体呈圆柱形，前期切割线与晶体相接触时应力最大，采用10mm/h的切割速度过快会导致内部裂纹扩展，加速晶体内部开裂，当切割到晶锭中部时，由于切割的直径变大，与线接触的切割面面积也变大，采用相同的较快给进速度极易导致产生线弓，线弓过大会导致切割机断线，同时晶圆表面也会产生大量的波浪条纹，影响后续的加工。The crystal ingot cut out by this method, because the crystal ingot is in a cylindrical shape after being wrapped with glue, the stress is the largest when the cutting line contacts the crystal in the early stage. If the cutting speed of 10mm/h is too fast, it will cause internal cracks to expand and accelerate the internal cracking of the crystal. Cracking, when cutting to the middle of the ingot, due to the larger diameter of the cut, the area of the cutting surface in contact with the wire also becomes larger. Using the same faster feed speed can easily lead to wire bow, and the wire bow is too large to cause the cutting machine Disconnection, and at the same time, a large number of wavy stripes will be generated on the surface of the wafer, which will affect the subsequent processing.
上面所述只是为了说明本发明,应该理解为本发明并不局限于以上实施例,符合本发明思想的各种变通形式均在本发明的保护范围之内。The above description is only to illustrate the present invention, and it should be understood that the present invention is not limited to the above embodiments, and various modifications conforming to the idea of the present invention are within the protection scope of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310513438.9ACN116551866A (en) | 2023-05-09 | 2023-05-09 | Method for reducing cutting stress during AlN crystal processing |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310513438.9ACN116551866A (en) | 2023-05-09 | 2023-05-09 | Method for reducing cutting stress during AlN crystal processing |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310513438.9APendingCN116551866A (en) | 2023-05-09 | 2023-05-09 | Method for reducing cutting stress during AlN crystal processing |
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| CN102848481A (en)* | 2012-10-12 | 2013-01-02 | 蠡县英利新能源有限公司 | Cutting process for cutting silicon ingot |
| CN109571784A (en)* | 2018-11-29 | 2019-04-05 | 云南北方昆物光电科技发展有限公司 | A method of improving indium antimonide cut crystal product qualified rate |
| CN115351931A (en)* | 2022-07-28 | 2022-11-18 | 江西新余新材料科技研究院 | Crystal cutting method and piezoelectric wafer |
| CN115816673A (en)* | 2022-11-28 | 2023-03-21 | 山东大学 | A pretreatment method for cutting irregular semiconductor crystals |
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| CN102380914A (en)* | 2011-10-27 | 2012-03-21 | 江西赛维Ldk太阳能高科技有限公司 | Silicon block cutting method and silicon block cutting device |
| CN102848481A (en)* | 2012-10-12 | 2013-01-02 | 蠡县英利新能源有限公司 | Cutting process for cutting silicon ingot |
| CN109571784A (en)* | 2018-11-29 | 2019-04-05 | 云南北方昆物光电科技发展有限公司 | A method of improving indium antimonide cut crystal product qualified rate |
| CN115351931A (en)* | 2022-07-28 | 2022-11-18 | 江西新余新材料科技研究院 | Crystal cutting method and piezoelectric wafer |
| CN115816673A (en)* | 2022-11-28 | 2023-03-21 | 山东大学 | A pretreatment method for cutting irregular semiconductor crystals |
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