技术领域technical field
本发明涉及光电技术领域，特别涉及一种纳米阵列激光器及纳米阵列激光器制备方法。The invention relates to the field of optoelectronic technology, in particular to a nano-array laser and a method for preparing the nano-array laser.
背景技术Background technique
现有的DFB(Distributed Feedback Laser，分布式反馈激光器)半导体激光器多是采用边发射激光器，搭配一阶光栅实现边发射，但采用一阶光栅的激光器中，在禁带两边同时存在两个完全简并的模式，实际制作过程中无法精确控制其中某个模式激射，在远场容易形成双瓣，不利于后续与光栅或其他光电器件的耦合。尽管可以在光栅中引进一个λ/4的相移来避免简并模式，但同时也会导致DFB激光器结构复杂化，导致不确定的端面相位容易引起空间烧孔效应，造成模式不稳定。同时边发射激光器的输出近场光斑成椭圆形，这也将导致其远场发散角很大。Most of the existing DFB (Distributed Feedback Laser, distributed feedback laser) semiconductor lasers use edge-emitting lasers, which are matched with first-order gratings to achieve edge emission. However, in lasers using first-order gratings, there are two completely simple In the actual production process, it is impossible to accurately control the lasing of one of the modes, and it is easy to form double lobes in the far field, which is not conducive to the subsequent coupling with gratings or other optoelectronic devices. Although a λ/4 phase shift can be introduced in the grating to avoid degenerate modes, it will also complicate the structure of the DFB laser, resulting in uncertain end-face phases that easily cause spatial hole-burning effects and cause mode instability. At the same time, the output near-field spot of the edge-emitting laser is elliptical, which will also lead to a large divergence angle in the far field.
发明内容Contents of the invention
有鉴于此，本发明的目的在于提供一种纳米阵列激光器及纳米阵列激光器制备方法，解决了现有技术中不确定的端面相位容易引起空间烧孔效应，造成模式不稳定，以及远场发散角大的问题。In view of this, the purpose of the present invention is to provide a nano-array laser and a method for preparing a nano-array laser, which solves the problem that the uncertain end face phase in the prior art is likely to cause the spatial hole burning effect, resulting in unstable modes, and the problem of far-field divergence angle Big question.
为解决上述技术问题，本发明提供了一种纳米阵列激光器，包括：In order to solve the above technical problems, the present invention provides a nano-array laser, comprising:
衬底、半导体材料纳米阵列结构、透光导电电极、用于聚拢光束的二阶光栅和衬底电极；Substrate, semiconductor material nano-array structure, light-transmitting conductive electrodes, second-order gratings and substrate electrodes for converging light beams;
在所述衬底的一侧制备有所述半导体材料纳米阵列结构，所述半导体材料纳米阵列结构背向所述衬底的表面覆盖有所述透光导电电极；The semiconductor material nanoarray structure is prepared on one side of the substrate, and the surface of the semiconductor material nanoarray structure facing away from the substrate is covered with the light-transmitting conductive electrode;
所述透光导电电极背向所述半导体材料纳米阵列结构的一侧集成有所述二阶光栅；所述二阶光栅的二级衍射用于对所述半导体材料纳米阵列结构背向所述衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，所述二阶光栅的一级衍射用于实现所述半导体材料纳米阵列结构的所述顶端发射的光束垂直表面出射；The second-order grating is integrated on the side of the light-transmitting conductive electrode facing away from the semiconductor material nano-array structure; the second-order diffraction of the second-order grating is used for The light beam emitted from the top of the bottom is subjected to optical feedback and mode selection to realize beam convergence, and the first-order diffraction of the second-order grating is used to realize the vertical surface emission of the light beam emitted from the top of the semiconductor material nanoarray structure;
所述半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔；A single semiconductor material nanostructure in the semiconductor material nanoarray structure forms a laser source resonant cavity;
所述半导体材料纳米阵列结构靠向所述衬底的一侧，与所述衬底电极导电连接。The nano-array structure of semiconductor material is close to the side of the substrate and electrically connected to the substrate electrode.
可选的，所述二阶光栅为圆环形二阶光栅结构。Optionally, the second-order grating is an annular second-order grating structure.
可选的，所述透光导电电极边缘设置有透光导电电极拓宽结构。Optionally, a light-transmitting conductive electrode widening structure is provided on the edge of the light-transmitting conductive electrode.
可选的，所述二阶光栅外轮廓与所述透光导电电极形状及大小相同。Optionally, the outer contour of the second-order grating is the same shape and size as the light-transmitting conductive electrode.
可选的，所述二阶光栅的外轮廓为圆形形状。Optionally, the outer contour of the second-order grating is circular.
可选的，沿垂直于所述衬底指向所述透光导电电极的方向，在每个所述半导体材料纳米阵列结构中半导体结构的表面，依次覆盖有绝缘层和金属膜层，形成所述激光源谐振腔。Optionally, along the direction perpendicular to the substrate and pointing to the light-transmitting conductive electrode, the surface of the semiconductor structure in each of the semiconductor material nano-array structures is covered with an insulating layer and a metal film layer in sequence, forming the Laser source resonator.
可选的，所述二阶光栅为二氧化硅光栅。Optionally, the second-order grating is a silicon dioxide grating.
可选的，所述衬底为氮化镓衬底；Optionally, the substrate is a gallium nitride substrate;
相应的，所述衬底电极与所述半导体材料纳米阵列结构设置在所述氮化镓衬底的同侧。Correspondingly, the substrate electrode and the semiconductor material nano-array structure are arranged on the same side of the gallium nitride substrate.
本发明还提供了一种纳米阵列激光器制备方法，包括：The present invention also provides a nano-array laser preparation method, comprising:
在衬底一侧表面形成半导体材料纳米阵列结构，所述半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔；在透光导电电极的一侧表面，集成聚拢光束的二阶光栅；A semiconductor material nano-array structure is formed on one side of the substrate, and a single semiconductor material nano-structure in the semiconductor material nano-array structure forms a laser source resonator; on one side of the light-transmitting conductive electrode, a second-order grating for concentrating the beam is integrated;
将所述透光导电电极背向所述二阶光栅的一侧覆盖在所述半导体材料纳米阵列结构的出光面；Covering the side of the light-transmitting conductive electrode facing away from the second-order grating on the light-emitting surface of the nano-array structure of semiconductor material;
所述半导体材料纳米阵列结构靠向所述衬底的一侧，与衬底电极导电连接，制成纳米阵列激光器。The nano-array structure of semiconductor material is close to the side of the substrate, and is conductively connected with the substrate electrode to form a nano-array laser.
可选的，所述在透光导电电极的一侧表面，集成二阶光栅，包括：Optionally, the second-order grating is integrated on one side of the light-transmitting conductive electrode, including:
根据激光源的激射波长确定所述二阶光栅的周期、深度和占空比；determining the period, depth and duty cycle of the second-order grating according to the lasing wavelength of the laser source;
将确定所述周期、所述深度和所述占空比的二阶光栅，集成在所述透光导电电极的一侧表面。A second-order grating for determining the period, the depth, and the duty ratio is integrated on one side of the light-transmitting conductive electrode.
可见，本发明提供的纳米阵列激光器，包括衬底、半导体材料纳米阵列结构、透光导电电极、用于聚拢光束的二阶光栅和衬底电极，在衬底的一侧制备有半导体材料纳米阵列结构，半导体材料纳米阵列结构背向衬底的表面覆盖有透光导电电极，透光导电电极背向半导体材料纳米阵列结构的一侧集成有二阶光栅，二阶光栅的二级衍射用于对半导体材料纳米阵列结构，背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，二阶光栅的一级衍射用于实现半导体材料纳米阵列结构的顶端发射的光束垂直表面出射。半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔，半导体材料纳米阵列结构靠向衬底的一侧，与衬底电极导电连接。本发明通过在透光导电电极背向与半导体材料纳米阵列结构接触的一侧，集成有聚拢光束的二阶光栅，该二阶光栅的二级衍射用于对半导体材料纳米阵列结构背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，降低光束散射角，一级衍射用于实现半导体材料纳米阵列结构的顶端发射的光束垂直表面出射，最终获得稳定低散度光束输出，解决了纳米阵列激光器的激光发散角大的问题，实现了纳米阵列激光器窄线宽、单纵模、稳定低散度光束的输出。It can be seen that the nano-array laser provided by the present invention includes a substrate, a semiconductor material nano-array structure, a light-transmitting conductive electrode, a second-order grating for concentrating light beams, and a substrate electrode, and a semiconductor material nano-array is prepared on one side of the substrate. structure, the surface of the semiconductor material nanoarray structure facing away from the substrate is covered with a light-transmitting conductive electrode, and the side of the light-transmitting conductive electrode facing away from the semiconductor material nanoarray structure is integrated with a second-order grating, and the second-order diffraction of the second-order grating is used to detect In the semiconductor material nanoarray structure, the light beam emitted from the top of the substrate is subjected to optical feedback and mode selection to achieve beam convergence, and the first-order diffraction of the second-order grating is used to realize the vertical surface emission of the light beam emitted from the top of the semiconductor material nanoarray structure. In the semiconductor material nano-array structure, a single semiconductor material nano-structure forms a laser source resonant cavity, and the semiconductor material nano-array structure is close to the side of the substrate, and is conductively connected with the substrate electrode. In the present invention, a second-order grating for concentrating light beams is integrated on the side of the light-transmitting conductive electrode facing away from the contact with the semiconductor material nano-array structure, and the second-order diffraction of the second-order grating is used to correct the semiconductor material nano-array structure back to the substrate. The beam emitted from the top is subjected to optical feedback and mode selection to achieve beam convergence and reduce the beam scattering angle. The first-order diffraction is used to realize the beam emitted from the top of the semiconductor material nanoarray structure to exit vertically on the surface, and finally obtain a stable low-divergence beam output. The problem of large laser divergence angle of the nano-array laser is solved, and the output of the nano-array laser with narrow line width, single longitudinal mode, and stable low-divergence beam is realized.
此外，本发明还提供了一种纳米阵列激光器制备方法，同样具有上述有益效果。In addition, the present invention also provides a nano-array laser preparation method, which also has the above beneficial effects.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.
图1为本发明实施例提供的一种纳米阵列激光器的结构示意图；Fig. 1 is a schematic structural diagram of a nano-array laser provided by an embodiment of the present invention;
图2为本发明实施例提供的纳米阵列激光器中一种激光源谐振腔的结构示意图；2 is a schematic structural diagram of a laser source resonator in a nanoarray laser provided by an embodiment of the present invention;
图3为本发明实施例提供的一种纳米阵列激光器制备方法的流程图；Fig. 3 is a flow chart of a nano-array laser manufacturing method provided by an embodiment of the present invention;
图4为本发明实施例提供的一种纳米阵列激光器制备方法的流程示意图；Fig. 4 is a schematic flow chart of a nano-array laser manufacturing method provided by an embodiment of the present invention;
图5为本发明实施例提供的一种纳米阵列激光器中光栅深度为80纳米，光栅周期为407.34纳米，占空比为0.44的圆形二阶布拉格光栅的光场能量约束分布仿真图；5 is a simulation diagram of the light field energy constraint distribution of a circular second-order Bragg grating with a grating depth of 80 nanometers, a grating period of 407.34 nanometers, and a duty ratio of 0.44 in a nanoarray laser provided by an embodiment of the present invention;
图6为本发明实施例提供的一种纳米阵列激光器中光栅深度为80纳米，光栅周期为203.67纳米，占空比为0.44的圆形二阶布拉格光栅的光场能量约束分布仿真图；6 is a simulation diagram of the light field energy constraint distribution of a circular second-order Bragg grating with a grating depth of 80 nanometers, a grating period of 203.67 nanometers, and a duty ratio of 0.44 in a nanoarray laser provided by an embodiment of the present invention;
图7为本发明实施例提供的一种常规纳米阵列激光器纵向截面的二维模型场强分布仿真图；7 is a simulation diagram of a two-dimensional model field intensity distribution of a longitudinal section of a conventional nanoarray laser provided by an embodiment of the present invention;
图8为本发明实施例提供的一种二阶光栅分布反馈式纳米阵列激光器纵向截面的二维模型场强分布仿真图；Fig. 8 is a two-dimensional model field intensity distribution simulation diagram of a longitudinal section of a second-order grating distributed feedback nanoarray laser provided by an embodiment of the present invention;
图9为本发明实施例提供的一种二阶光栅分布反馈式纳米阵列激光器在510纳米至520纳米的波长范围的全局电场能量仿真图；Fig. 9 is a simulation diagram of global electric field energy in the wavelength range of 510 nm to 520 nm of a second-order grating distributed feedback nanoarray laser provided by an embodiment of the present invention;
附图1至2，及附图4中，附图标记说明如下：Accompanying drawing 1 to 2, and in accompanying drawing 4, reference numeral is explained as follows:
10-衬底；10 - substrate;
20-半导体材料纳米阵列结构，21-半导体结构，22-绝缘层，23-金属膜层；20-semiconductor material nano-array structure, 21-semiconductor structure, 22-insulating layer, 23-metal film layer;
30-透光导电电极；30-translucent conductive electrode;
40-二阶光栅；40-second-order grating;
50-衬底电极。50 - Substrate electrode.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
传统半导体激光器由于采用光学系统反馈而存在衍射极限，难以实现小型化，通过引入半导体纳米线或纳米阵列的纳米激光领域已经使微型纳米激光器达到衍射极限的水平，但这离目前我们对激光器小型化的要求还远远不够。从2000年初开始，一种新型纳米等离子体激光器开始出现，它通过在适当的金属与介质组成的表面等离激元波导结构中，将半导体激光器的物理尺寸压缩到纳米量级，并且利用表面等离子体来实现光场调控，满足低损耗传输和高场强限制能力的条件,可以降低激光器的工作阈值。Due to the diffraction limit of traditional semiconductor lasers due to the use of optical system feedback, it is difficult to achieve miniaturization. By introducing the nanolaser field of semiconductor nanowires or nanoarrays, micro-nano lasers have reached the level of diffraction limit, but this is far from our current miniaturization of lasers. requirements are not enough. Since the beginning of 2000, a new type of nanoplasmonic laser has begun to appear. It compresses the physical size of the semiconductor laser to the nanometer level in a surface plasmon waveguide structure composed of appropriate metals and dielectrics, and utilizes surface plasmons The light field control can be realized by using a body to meet the conditions of low loss transmission and high field strength limitation capability, which can reduce the working threshold of the laser.
但目前纳米等离子体激光器仍存在缺点：However, there are still shortcomings in nanoplasmonic lasers:
(1)线宽较宽。受激光器激发态原子或离子自发辐射、相位噪声、以及谐振腔机械振动、温度抖动等外界因素的影响，都将会导致纳米等离子体激光器的激光线宽变宽。(1) The line width is wider. Affected by external factors such as the spontaneous emission of atoms or ions in the excited state of the laser, phase noise, mechanical vibration of the resonator, and temperature jitter, the laser linewidth of the nanoplasma laser will be broadened.
(2)存在多纵模激射。如果谐振腔不具有选模作用，激光起振后,会有一个或多个纵模产生。(2) Existence of multi-longitudinal mode lasing. If the resonant cavity does not have a mode selection function, one or more longitudinal modes will be generated after the laser starts to oscillate.
(3)光束发散角大。纳米阵列化等离子体激光器由于光束叠加会造成发散角过大，纳米阵列发射光场能量主要集中在中间和两个角度方向上，不利于实际应用中的光束耦合。(3) The beam divergence angle is large. The divergence angle of nanoarrayed plasmonic lasers is too large due to beam superposition, and the energy of the nanoarray emitted light field is mainly concentrated in the middle and two angle directions, which is not conducive to beam coupling in practical applications.
为了实现单模、窄线宽激光运转，通常需要利用滤波器、光栅等器件对谐振腔内的纵模数进行限制或选择，增加各纵模间净增益差异，使激光谐振腔内最终存在少数几个甚至只有一个纵模的振荡。基于分布式反馈的激光器能够有效减小线宽，同时能够对激光器谐振腔中特定的波长进行选模，抑制其他模式，从而达到单纵模激射的目的。但现有的DFB半导体激光器多是采用边发射激光器，搭配一阶光栅实现边发射，但采用一阶光栅的激光器中，在禁带两边同时存在两个完全简并的模式，实际制作过程中无法精确控制其中某个模式激射，在远场容易形成双瓣，不利于后续与光栅或其他光电器件的耦合。尽管可以在光栅中引进一个λ/4的相移来避免简并模式，但同时也会导致DFB激光器结构复杂化，导致不确定的端面相位容易引起空间烧孔效应，造成模式不稳定。同时边发射激光器的输出近场光斑成椭圆形，这也将导致其远场发散角很大。In order to achieve single-mode, narrow-linewidth laser operation, it is usually necessary to use filters, gratings and other devices to limit or select the number of longitudinal modes in the resonator, to increase the net gain difference between longitudinal modes, so that there will be a few in the laser resonator. Several even have oscillations in only one longitudinal mode. The laser based on distributed feedback can effectively reduce the line width, and at the same time, it can select the specific wavelength in the laser resonator and suppress other modes, so as to achieve the purpose of single longitudinal mode lasing. However, most of the existing DFB semiconductor lasers use edge-emitting lasers, which are matched with first-order gratings to achieve edge emission. However, in lasers using first-order gratings, there are two completely degenerate modes on both sides of the forbidden band, which cannot be achieved in the actual production process. Precisely controlling the lasing of one of the modes will easily form double lobes in the far field, which is not conducive to subsequent coupling with gratings or other optoelectronic devices. Although a λ/4 phase shift can be introduced in the grating to avoid degenerate modes, it will also complicate the structure of the DFB laser, resulting in uncertain end-face phases that easily cause spatial hole-burning effects and cause mode instability. At the same time, the output near-field spot of the edge-emitting laser is elliptical, which will also lead to a large divergence angle in the far field.
本发明通过在透光导电电极背向与半导体材料纳米阵列结构接触的一侧，集成有聚拢光束的二阶光栅，该二阶光栅的二级衍射用于对半导体材料纳米阵列结构背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，降低光束散射角，一级衍射用于实现半导体材料纳米阵列结构的顶端发射的光束垂直表面出射，最终获得稳定低散度光束输出，解决了纳米阵列激光器的激光发散角大的问题，实现了纳米阵列激光器窄线宽、单纵模、稳定低散度光束的输出。In the present invention, a second-order grating for concentrating light beams is integrated on the side of the light-transmitting conductive electrode facing away from the contact with the semiconductor material nano-array structure, and the second-order diffraction of the second-order grating is used to correct the semiconductor material nano-array structure back to the substrate. The beam emitted from the top is subjected to optical feedback and mode selection to achieve beam convergence and reduce the beam scattering angle. The first-order diffraction is used to realize the beam emitted from the top of the semiconductor material nanoarray structure to exit vertically on the surface, and finally obtain a stable low-divergence beam output. The problem of large laser divergence angle of the nano-array laser is solved, and the output of the nano-array laser with narrow line width, single longitudinal mode, and stable low-divergence beam is realized.
实施例1：Example 1:
请参考图1，图1为本发明实施例提供的一种纳米阵列激光器的结构示意图。可以包括：Please refer to FIG. 1 , which is a schematic structural diagram of a nano-array laser provided by an embodiment of the present invention. Can include:
衬底10、半导体材料纳米阵列结构20、透光导电电极30、用于聚拢光束的二阶光栅40和衬底电极50；A substrate 10, a semiconductor material nano-array structure 20, a light-transmitting conductive electrode 30, a second-order grating 40 for concentrating light beams, and a substrate electrode 50;
在衬底10的一侧制备有半导体材料纳米阵列结构20，半导体材料纳米阵列结构20背向衬底10的表面覆盖有透光导电电极30；A semiconductor material nanoarray structure 20 is prepared on one side of the substrate 10, and the surface of the semiconductor material nanoarray structure 20 facing away from the substrate 10 is covered with a light-transmitting conductive electrode 30;
透光导电电极30背向半导体材料纳米阵列结构20的一侧集成有二阶光栅40；二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20背向衬底10的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，二阶光栅40的一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射；A second-order grating 40 is integrated on the side of the light-transmitting conductive electrode 30 facing away from the semiconductor material nano-array structure 20; Perform optical feedback and mode selection to achieve beam convergence, and the first-order diffraction of the second-order grating 40 is used to realize the vertical surface emission of the beam emitted from the top of the semiconductor material nanoarray structure 20;
半导体材料纳米阵列结构20中单个半导体材料纳米结构形成激光源谐振腔；A single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 forms a laser source resonant cavity;
半导体材料纳米阵列结构20靠向衬底10的一侧，与衬底电极50导电连接。The nano-array structure 20 of semiconductor material is close to the side of the substrate 10 and electrically connected with the substrate electrode 50 .
需要进行说明的是，本实施例中半导体材料纳米阵列结构20，通过在衬底10的一侧表面生长得到，构成P-N结，其中，PN结为具有单向导电性的结构。半导体材料纳米阵列结构20通过多个半导体材料纳米结构呈阵列布置，以实现纳米阵列激光器的面发射。二阶光栅40设计成能够对半导体材料纳米阵列结构20顶端发射的光束进行光反馈和模式选择，实现光束聚拢的光栅。It should be noted that in this embodiment, the nano-array structure 20 of semiconductor material is grown on one side of the substrate 10 to form a P-N junction, wherein the PN junction is a structure with unidirectional conductivity. The semiconductor material nano-array structure 20 is arranged in an array by a plurality of semiconductor material nano-structures, so as to realize the surface emission of the nano-array laser. The second-order grating 40 is designed to perform optical feedback and mode selection on the light beam emitted from the top of the nano-array structure 20 of semiconductor material, so as to realize the grating that gathers the light beam.
本实施例并不限定用于聚拢光束的二阶光栅40的具体材质，只要是能够起到聚拢半导体材料纳米阵列结构20发出光束的作用即可。例如，二阶光栅40的材质可以是二氧化硅，或者二阶光栅40的材质也可以是磷化铟，或者二阶光栅40的材质也可以是氮化镓，或者二阶光栅40的材质还可以是氧化锌。本实施例并不限定衬底10的具体材质。例如，衬底10可以是氮化镓衬底，或者衬底10也可以是硅片。本实施例并不限定衬底10的具体厚度。例如，可以是0.1微米，或者也可以是2微米，或者还可以是5微米。为了保证器件的效率，本实施例中衬底10的厚度可以在0.1至10微米之间选取。本实施例并不限定半导体材料纳米阵列结构20的具体材质，只要是在泵浦条件下能够激射出光束即可。例如，半导体材料纳米阵列结构20的材质可以是硫化镉，或者半导体材料纳米阵列结构20的材质也可以是氧化锌，或者半导体材料纳米阵列结构20的材质也可以是砷化镓，或者半导体材料纳米阵列结构20的材质还可以是氮化镓以及其他半导体材质。本实施例中半导体材料纳米阵列结构20具体的结构可以是纳米线阵列、纳米柱阵列以及纳米棒阵列，本实施例并不对此进行限定。本实施例并不对透光导电电极30的具体材质进行限定，只要是能够在导电的同时，能够透射激光光束即可。例如，透光导电电极30可以是ITO导电玻璃，其中ITO导电玻璃是在钠钙基或硅硼基基片玻璃的基础上，利用磁控溅射的方法镀上一层氧化铟锡膜加工制作成的器件。本实施例中ITO导电玻璃的厚度可以在0.2微米至5微米之间进行选取。本实施例中衬底电极50的具体材质可以是金、锗、镍或银等材质，只要是能够导电即可。This embodiment does not limit the specific material of the second-order grating 40 for concentrating light beams, as long as it can play the role of concentrating the light beams emitted by the semiconductor material nano-array structure 20 . For example, the material of the second-order grating 40 can be silicon dioxide, or the material of the second-order grating 40 can also be indium phosphide, or the material of the second-order grating 40 can also be gallium nitride, or the material of the second-order grating 40 can also be It may be zinc oxide. This embodiment does not limit the specific material of the substrate 10 . For example, the substrate 10 may be a gallium nitride substrate, or the substrate 10 may also be a silicon wafer. This embodiment does not limit the specific thickness of the substrate 10 . For example, it may be 0.1 microns, or may be 2 microns, or may be 5 microns. In order to ensure the efficiency of the device, the thickness of the substrate 10 in this embodiment can be selected from 0.1 to 10 microns. This embodiment does not limit the specific material of the semiconductor material nano-array structure 20, as long as it can emit light beams under pumping conditions. For example, the material of the semiconductor material nano-array structure 20 may be cadmium sulfide, or the material of the semiconductor material nano-array structure 20 may also be zinc oxide, or the material of the semiconductor material nano-array structure 20 may also be gallium arsenide, or the semiconductor material nano-array structure 20 may be The material of the array structure 20 can also be gallium nitride and other semiconductor materials. The specific structure of the semiconductor material nano-array structure 20 in this embodiment may be a nano-wire array, a nano-column array and a nano-rod array, which is not limited in this embodiment. This embodiment does not limit the specific material of the light-transmitting conductive electrode 30 , as long as it can conduct electricity and transmit the laser beam at the same time. For example, the light-transmitting conductive electrode 30 can be ITO conductive glass, wherein the ITO conductive glass is processed by coating a layer of indium tin oxide film on the basis of soda-lime-based or silicon-boron-based substrate glass by magnetron sputtering. into the device. The thickness of the ITO conductive glass in this embodiment can be selected between 0.2 microns and 5 microns. The specific material of the substrate electrode 50 in this embodiment may be gold, germanium, nickel or silver, as long as it can conduct electricity.
本实施例并不限定半导体材料纳米阵列结构20中单个半导体材料纳米结构形成激光源谐振腔的具体方式，只要是能够形成激光器的谐振腔的结构即可。本实施例并不限定半导体材料纳米阵列结构20靠向衬底10的一侧，与衬底电极50导电连接的具体方式。例如，半导体材料纳米阵列结构20靠向衬底10的一侧，可以通过将衬底10设置成导电材质，进而铜鼓衬底10与衬底电极50导电连接；或者半导体材料纳米阵列结构20靠向衬底10的一侧，也可以通过其他方式与衬底电极50导电连接。This embodiment does not limit the specific manner in which a single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 forms a laser source resonant cavity, as long as it is a structure that can form a laser resonant cavity. This embodiment does not limit the specific manner in which the side of the semiconductor material nano-array structure 20 close to the substrate 10 is conductively connected to the substrate electrode 50 . For example, the semiconductor material nano-array structure 20 is close to the side of the substrate 10, the substrate 10 can be set as a conductive material, and then the copper drum substrate 10 is electrically connected to the substrate electrode 50; or the semiconductor material nano-array structure 20 is close to One side of the substrate 10 may also be conductively connected to the substrate electrode 50 in other ways.
进一步需要说明的是，本实施例中用于聚拢光束的二阶光栅40的光栅周期，光栅深度和光栅占空比，可以根据半导体材料纳米阵列结构20的性质以及激光源激射波长确定。本实施例中可以将透光导电电极30与外部电路的负极连接，将衬底电极50与外部电路的正极连接，形成电泵浦结构。It should be further noted that the grating period, grating depth and grating duty cycle of the second-order grating 40 used to condense the light beam in this embodiment can be determined according to the properties of the semiconductor material nanoarray structure 20 and the lasing wavelength of the laser source. In this embodiment, the light-transmitting conductive electrode 30 can be connected to the negative pole of the external circuit, and the substrate electrode 50 can be connected to the positive pole of the external circuit to form an electric pumping structure.
进一步地，为了进一步降低激光光束的发散角，上述二阶光栅40可以为圆环形二阶光栅结构。Further, in order to further reduce the divergence angle of the laser beam, the above-mentioned second-order grating 40 may be a ring-shaped second-order grating structure.
需要进行说明的是，本实施例中圆环形二阶光栅为正圆形。由于圆形光栅的空间模态具有径向相关性，其径向驻波模可以用非周期贝塞尔函数的叠加来表示，从圆环中心到边缘，柱波振幅减小，因此光场主要集中在圆盘中心附近，但是高阶贝塞尔函数在原点附近为零，圆盘中心由于方位角极化产生零电场，所以呈暗色，最后呈现出来的远场图像就是环形的激光出射，而传统的线性二阶光栅激光器，脊腔中的驻波模式是正弦波，具有周期性，导致出光在整个出光面是均匀的。这样对比下来，圆环形光栅具有聚拢光束的效果。It should be noted that, in this embodiment, the ring-shaped second-order grating is a perfect circle. Since the spatial mode of the circular grating has radial correlation, its radial standing wave mode can be expressed by the superposition of non-periodic Bessel functions. From the center of the ring to the edge, the amplitude of the column wave decreases, so the light field mainly It is concentrated near the center of the disk, but the high-order Bessel function is zero near the origin, and the center of the disk is dark due to the zero electric field generated by the azimuth polarization. In traditional linear second-order grating lasers, the standing wave mode in the ridge cavity is a sinusoidal wave with periodicity, resulting in uniform light output across the entire light output surface. In this way, the annular grating has the effect of concentrating the light beam.
进一步地，为了保证半导体材料纳米阵列结构20中单个半导体材料纳米结构能够形成激光源谐振腔，可以沿垂直于衬底10指向透光导电电极30的方向，在每个半导体材料纳米阵列结构20中半导体结构21的表面，依次覆盖有绝缘层22和金属膜层23，形成激光源谐振腔。具体请参考图2，图2为本发明实施例提供的纳米阵列激光器中一种激光源谐振腔的结构示意图。Further, in order to ensure that a single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 can form a laser source resonator cavity, a direction perpendicular to the substrate 10 and pointing to the light-transmitting conductive electrode 30 can be placed in each semiconductor material nanoarray structure 20. The surface of the semiconductor structure 21 is covered with an insulating layer 22 and a metal film layer 23 in order to form a laser source resonant cavity. Please refer to FIG. 2 for details. FIG. 2 is a schematic structural diagram of a laser source resonator in a nano-array laser provided by an embodiment of the present invention.
需要进行说明的是，本实施例中在半导体结构21沿平行于衬底10方向的表面，在覆盖绝缘层22后，覆盖金属膜层23，形成激光源谐振腔。本实施例并不限定绝缘层22的具体材质，只要是能够起到绝缘的效果即可。例如，绝缘层22可以是二氧化硅膜，或者绝缘层22也可以是氟化镁膜，或者绝缘层22还可以是其他材质。本实施例并不限定绝缘层22的具体厚度。例如，绝缘层22的厚度可以是5纳米，或者绝缘层22的厚度也可以是10纳米，或者绝缘层22的厚度还可以是30纳米。为了保证绝缘层22的绝缘性，上述绝缘层22的厚度可以保持在5纳米至50纳米之间。相应的，本实施例并不限定金属膜层23的具体材质。例如，金属膜层23的材质可以是金、银、铝、铜、镍以及其他金属材质。本实施例并不限定金属膜层23的具体厚度，金属膜层23的厚度可以保持在20纳米至80纳米之间。本实施例并不限定在每个半导体材料纳米阵列结构20中半导体结构21的表面，依次覆盖有绝缘层22和金属膜层23的具体方式。例如，可以利用磁控溅射的方式，依次在半导体结构21沿平行于衬底10的表面，覆盖绝缘层22和金属膜层23；或者也可以通过其他方式依次在半导体结构21沿平行于衬底10的表面，覆盖绝缘层22和金属膜层23。It should be noted that in this embodiment, the surface of the semiconductor structure 21 along the direction parallel to the substrate 10 is covered with the insulating layer 22 and then covered with the metal film layer 23 to form a laser source resonant cavity. This embodiment does not limit the specific material of the insulating layer 22 , as long as it can play an insulating effect. For example, the insulating layer 22 can be a silicon dioxide film, or the insulating layer 22 can also be a magnesium fluoride film, or the insulating layer 22 can also be made of other materials. This embodiment does not limit the specific thickness of the insulating layer 22 . For example, the thickness of the insulating layer 22 can be 5 nanometers, or the thickness of the insulating layer 22 can also be 10 nanometers, or the thickness of the insulating layer 22 can also be 30 nanometers. In order to ensure the insulation of the insulating layer 22, the thickness of the insulating layer 22 can be kept between 5 nanometers and 50 nanometers. Correspondingly, this embodiment does not limit the specific material of the metal film layer 23 . For example, the material of the metal film layer 23 can be gold, silver, aluminum, copper, nickel and other metal materials. This embodiment does not limit the specific thickness of the metal film layer 23 , and the thickness of the metal film layer 23 can be kept between 20 nm and 80 nm. This embodiment does not limit the specific manner in which the surface of the semiconductor structure 21 in each semiconductor material nano-array structure 20 is sequentially covered with the insulating layer 22 and the metal film layer 23 . For example, magnetron sputtering can be used to cover the insulating layer 22 and the metal film layer 23 sequentially on the surface of the semiconductor structure 21 parallel to the substrate 10; The surface of the bottom 10 is covered with an insulating layer 22 and a metal film layer 23 .
进一步地，为了降低纳米阵列激光器受温度的影响，上述二阶光栅40可以为二氧化硅光栅。Further, in order to reduce the effect of temperature on the nano-array laser, the above-mentioned second-order grating 40 may be a silicon dioxide grating.
需要进行说明的是，本实施例中通过将二阶光栅40设置为二氧化硅光栅，能够提高器件的阻热性能，降低温度对器件的影响。It should be noted that in this embodiment, by setting the second-order grating 40 as a silicon dioxide grating, the heat resistance performance of the device can be improved, and the influence of temperature on the device can be reduced.
进一步地，为了提高纳米阵列激光器的集成度，降低器件的制备成本，上述衬底10可以为氮化镓衬底；Further, in order to improve the integration level of the nano-array laser and reduce the manufacturing cost of the device, the above-mentioned substrate 10 may be a gallium nitride substrate;
相应的，衬底电极50与半导体材料纳米阵列结构20设置在氮化镓衬底的同侧。Correspondingly, the substrate electrode 50 and the semiconductor material nano-array structure 20 are disposed on the same side of the GaN substrate.
需要进行说明的是，本实施例中通过将衬底10设置为氮化镓材质的衬底，能够充当衬底电极50与半导体材料纳米阵列结构20间导电连接的介质，保证衬底电极50与半导体材料纳米阵列结构20之间导电连接。通过将衬底电极50与半导体材料纳米阵列结构20设置在氮化镓衬底的同侧，能够简化器件的制备过程。本实施例并不限定衬底电极50设置在氮化镓衬底的一侧的方式。例如，可以通过蒸镀电极的方式将衬底电极50，设置在氮化镓衬底制备有半导体材料纳米阵列结构20的同侧；或者也可以采用其他方式将衬底电极50，设置在氮化镓衬底制备有半导体材料纳米阵列结构20的同侧。It should be noted that in this embodiment, by setting the substrate 10 as a substrate made of gallium nitride, it can serve as a medium for the conductive connection between the substrate electrode 50 and the semiconductor material nano-array structure 20, ensuring that the substrate electrode 50 and the semiconductor material nano-array structure 20 are connected The semiconductor material nano-array structures 20 are electrically connected. By arranging the substrate electrode 50 and the semiconductor material nano-array structure 20 on the same side of the gallium nitride substrate, the fabrication process of the device can be simplified. This embodiment does not limit the manner in which the substrate electrode 50 is disposed on one side of the GaN substrate. For example, the substrate electrode 50 can be disposed on the same side of the gallium nitride substrate on which the semiconductor material nano-array structure 20 is prepared by means of evaporation electrodes; or the substrate electrode 50 can be disposed on the nitride The gallium substrate is prepared on the same side as the semiconductor material nanoarray structure 20 .
应用本发明实施例提供的纳米阵列激光器，包括衬底10、半导体材料纳米阵列结构20、透光导电电极30、用于聚拢光束的二阶光栅40和衬底电极50，在衬底10的一侧制备有半导体材料纳米阵列结构20，半导体材料纳米阵列结构20背向衬底10的表面覆盖有透光导电电极30，透光导电电极30背向半导体材料纳米阵列结构20的一侧集成有二阶光栅40，二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20，背向衬底10的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，二阶光栅40的一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射。半导体材料纳米阵列结构20中单个半导体材料纳米结构形成激光源谐振腔，半导体材料纳米阵列结构20靠向衬底10的一侧，与衬底电极50导电连接。本发明通过在透光导电电极30背向与半导体材料纳米阵列结构20接触的一侧，集成有聚拢光束的二阶光栅40，该二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，降低光束散射角，一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射，最终获得稳定低散度光束输出，解决了纳米阵列激光器的激光发散角大的问题，实现了纳米阵列激光器窄线宽、单纵模、稳定低散度光束的输出。此外，通过将二阶光栅40设置为圆环形二阶光栅结构，进一步降低了激光光束的发散角；通过沿垂直于衬底10指向透光导电电极30的方向，在每个半导体材料纳米阵列结构20中半导体结构21的表面，依次覆盖绝缘层22和金属膜层23，形成激光源谐振腔的方式，保证了半导体材料纳米阵列结构20中单个半导体材料纳米结构能够形成激光源谐振腔；通过将二阶光栅40设置为二氧化硅光栅，能够提高器件的阻热性能，降低温度对器件的影响；通过将衬底10设置为氮化镓材质的衬底，保证了衬底电极50与半导体材料纳米阵列结构20之间导电连接，进而提高了纳米阵列激光器的集成度，降低了器件的制备成本。The nano-array laser provided by the embodiment of the present invention includes a substrate 10, a semiconductor material nano-array structure 20, a light-transmitting conductive electrode 30, a second-order grating 40 for concentrating light beams, and a substrate electrode 50. On one side of the substrate 10 The semiconductor material nano-array structure 20 is prepared on the side, the surface of the semiconductor material nano-array structure 20 facing away from the substrate 10 is covered with a light-transmitting conductive electrode 30, and the side of the light-transmitting conductive electrode 30 facing away from the semiconductor material nano-array structure 20 is integrated with two The second-order diffraction of the second-order grating 40 and the second-order grating 40 are used for optical feedback and mode selection of the light beams emitted from the top of the semiconductor material nanoarray structure 20 and facing away from the substrate 10, so as to realize beam convergence. The first-order diffraction of the second-order grating 40 Diffraction is used to realize that the light beam emitted from the top of the semiconductor material nano-array structure 20 emerges vertically from the surface. A single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 forms a laser source resonant cavity, and the semiconductor material nanoarray structure 20 is close to the side of the substrate 10 and electrically connected to the substrate electrode 50 . In the present invention, on the side of the light-transmitting conductive electrode 30 facing away from the contact with the semiconductor material nano-array structure 20, a second-order grating 40 for concentrating light beams is integrated, and the second-order diffraction of the second-order grating 40 is used to analyze the semiconductor material nano-array structure. The light beam emitted from the top of the substrate 20 is subjected to optical feedback and mode selection to achieve beam convergence and reduce the beam scattering angle. The first-order diffraction is used to realize the vertical surface emission of the beam emitted from the top of the semiconductor material nanoarray structure 20, and finally obtain a stable The low-divergence beam output solves the problem of large laser divergence angle of the nano-array laser, and realizes the output of the nano-array laser with narrow line width, single longitudinal mode, and stable low-divergence beam. In addition, by setting the second-order grating 40 as a ring-shaped second-order grating structure, the divergence angle of the laser beam is further reduced; The surface of the semiconductor structure 21 in the structure 20 is sequentially covered with an insulating layer 22 and a metal film layer 23 to form a laser source resonant cavity, which ensures that a single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 can form a laser source resonant cavity; Setting the second-order grating 40 as a silicon dioxide grating can improve the heat resistance performance of the device and reduce the influence of temperature on the device; by setting the substrate 10 as a substrate made of gallium nitride, the contact between the substrate electrode 50 and the semiconductor The conductive connection between the material nano-array structures 20 improves the integration degree of the nano-array laser and reduces the manufacturing cost of the device.
实施例2：Example 2:
请参考图1，图1为本发明实施例提供的一种纳米阵列激光器的结构示意图。可以包括：Please refer to FIG. 1 , which is a schematic structural diagram of a nano-array laser provided by an embodiment of the present invention. Can include:
衬底10、半导体材料纳米阵列结构20、透光导电电极30、用于聚拢光束的二阶光栅40和衬底电极50；A substrate 10, a semiconductor material nano-array structure 20, a light-transmitting conductive electrode 30, a second-order grating 40 for concentrating light beams, and a substrate electrode 50;
在衬底10的一侧制备有半导体材料纳米阵列结构20，半导体材料纳米阵列结构20背向衬底10的表面覆盖有透光导电电极30；A semiconductor material nanoarray structure 20 is prepared on one side of the substrate 10, and the surface of the semiconductor material nanoarray structure 20 facing away from the substrate 10 is covered with a light-transmitting conductive electrode 30;
透光导电电极30背向半导体材料纳米阵列结构20的一侧集成有二阶光栅40；二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20背向衬底10的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，二阶光栅40的一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射；A second-order grating 40 is integrated on the side of the light-transmitting conductive electrode 30 facing away from the semiconductor material nano-array structure 20; Perform optical feedback and mode selection to achieve beam convergence, and the first-order diffraction of the second-order grating 40 is used to realize the vertical surface emission of the beam emitted from the top of the semiconductor material nanoarray structure 20;
半导体材料纳米阵列结构20中单个半导体材料纳米结构形成激光源谐振腔；A single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 forms a laser source resonant cavity;
半导体材料纳米阵列结构20靠向衬底10的一侧，与衬底电极50导电连接；The semiconductor material nano-array structure 20 is close to the side of the substrate 10, and is conductively connected with the substrate electrode 50;
透光导电电极30边缘设置有透光导电电极拓宽结构。A light-transmitting conductive electrode widening structure is provided on the edge of the light-transmitting conductive electrode 30 .
需要进行说明的是，本实施例中通过将透光导电电极30覆盖半导体材料纳米阵列结构20的边缘处，设置透光导电电极拓宽结构，能够进一步保证透光导电电极30能够覆盖整个半导体材料纳米阵列结构20的出光面。本实施例并不限定透光导电电极拓宽结构的宽度。It should be noted that, in this embodiment, by covering the edge of the semiconductor material nano-array structure 20 with the light-transmitting conductive electrode 30 and setting a light-transmitting conductive electrode widening structure, it can be further ensured that the light-transmitting conductive electrode 30 can cover the entire semiconductor material nano-array structure. The light emitting surface of the array structure 20 . This embodiment does not limit the width of the widened structure of the light-transmitting conductive electrode.
进一步地，为了降低器件的制备成本，提高器件的集成度，上述二阶光栅40外轮廓与透光导电电极30形状及大小可以相同。Furthermore, in order to reduce the manufacturing cost of the device and improve the integration of the device, the outer contour of the above-mentioned second-order grating 40 and the shape and size of the light-transmitting conductive electrode 30 may be the same.
需要进行说明的是，通过将二阶光栅40的外轮廓，设置为与透光导电电极30的形状及大小相同的结构，能够避免占用额外的空间，同时便于二阶光栅40与透光导电电极30的集成。It should be noted that by arranging the outer contour of the second-order grating 40 to have the same shape and size as the light-transmitting conductive electrode 30, it is possible to avoid occupying additional space, and at the same time facilitate the connection between the second-order grating 40 and the light-transmitting conductive electrode. 30 integrations.
进一步地，为了进一步降低二阶光栅40制备的复杂度，上述二阶光栅40的外轮廓可以为圆形形状。Further, in order to further reduce the complexity of manufacturing the second-order grating 40, the outer contour of the above-mentioned second-order grating 40 may be circular.
需要进行说明的是，二阶光栅40的光栅结构为圆形形状，通过将二阶光栅40的外轮廓同样设置为圆形形状，能够与光栅一体化制备，不需要额外增加制备步骤，简化了器件的制备流程。It should be noted that the grating structure of the second-order grating 40 is a circular shape, and by setting the outer contour of the second-order grating 40 to a circular shape, it can be integrated with the grating, and no additional preparation steps are required, which simplifies the process. Device fabrication process.
应用本发明实施例提供的纳米阵列激光器，包括衬底10、半导体材料纳米阵列结构20、透光导电电极30、用于聚拢光束的二阶光栅40和衬底电极50，在衬底10的一侧制备有半导体材料纳米阵列结构20，半导体材料纳米阵列结构20背向衬底10的表面覆盖有透光导电电极30，透光导电电极30背向半导体材料纳米阵列结构20的一侧集成有二阶光栅40，二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20，背向衬底10的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，二阶光栅40的一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射。半导体材料纳米阵列结构20中单个半导体材料纳米结构形成激光源谐振腔，半导体材料纳米阵列结构20靠向衬底10的一侧，与衬底电极50导电连接。本发明通过在透光导电电极30背向与半导体材料纳米阵列结构20接触的一侧，集成有聚拢光束的二阶光栅40，该二阶光栅40的二级衍射用于对半导体材料纳米阵列结构20背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，降低光束散射角，一级衍射用于实现半导体材料纳米阵列结构20的顶端发射的光束垂直表面出射，最终获得稳定低散度光束输出，解决了纳米阵列激光器的激光发散角大的问题，实现了纳米阵列激光器窄线宽、单纵模、稳定低散度光束的输出，通过将透光导电电极30覆盖半导体材料纳米阵列结构20的边缘处，设置透光导电电极拓宽结构，能够进一步保证透光导电电极30能够覆盖整个半导体材料纳米阵列结构20的出光面。此外，通过将二阶光栅40的外轮廓，设置为与透光导电电极30的形状及大小相同的结构，能够降低器件的制备成本，同时提高器件的集成度；通过将二阶光栅40的外轮廓同样设置为圆形形状，进一步降低了二阶光栅40制备的复杂度。The nano-array laser provided by the embodiment of the present invention includes a substrate 10, a semiconductor material nano-array structure 20, a light-transmitting conductive electrode 30, a second-order grating 40 for concentrating light beams, and a substrate electrode 50. On one side of the substrate 10 The semiconductor material nano-array structure 20 is prepared on the side, the surface of the semiconductor material nano-array structure 20 facing away from the substrate 10 is covered with a light-transmitting conductive electrode 30, and the side of the light-transmitting conductive electrode 30 facing away from the semiconductor material nano-array structure 20 is integrated with two The second-order diffraction of the second-order grating 40 and the second-order grating 40 are used for optical feedback and mode selection of the light beams emitted from the top of the semiconductor material nanoarray structure 20 and facing away from the substrate 10, so as to realize beam convergence. The first-order diffraction of the second-order grating 40 Diffraction is used to realize that the light beam emitted from the top of the semiconductor material nano-array structure 20 emerges vertically from the surface. A single semiconductor material nanostructure in the semiconductor material nanoarray structure 20 forms a laser source resonant cavity, and the semiconductor material nanoarray structure 20 is close to the side of the substrate 10 and electrically connected to the substrate electrode 50 . In the present invention, on the side of the light-transmitting conductive electrode 30 facing away from the contact with the semiconductor material nano-array structure 20, a second-order grating 40 for concentrating light beams is integrated, and the second-order diffraction of the second-order grating 40 is used to analyze the semiconductor material nano-array structure. The light beam emitted from the top of the substrate 20 is subjected to optical feedback and mode selection to achieve beam convergence and reduce the beam scattering angle. The first-order diffraction is used to realize the vertical surface emission of the beam emitted from the top of the semiconductor material nanoarray structure 20, and finally obtain a stable The low-divergence beam output solves the problem of large laser divergence angle of the nano-array laser, and realizes the output of the nano-array laser with narrow line width, single longitudinal mode, and stable low-divergence beam. By covering the light-transmitting conductive electrode 30 with the semiconductor material At the edge of the nano-array structure 20, a light-transmitting conductive electrode widening structure is provided, which can further ensure that the light-transmitting conductive electrode 30 can cover the entire light-emitting surface of the nano-array structure 20 made of semiconductor material. In addition, by setting the outer contour of the second-order grating 40 to have the same shape and size as the light-transmitting conductive electrode 30, the manufacturing cost of the device can be reduced, and the integration degree of the device can be improved at the same time; The outline is also set in a circular shape, which further reduces the complexity of manufacturing the second-order grating 40 .
下面对本发明实施例提供的纳米阵列激光器制备方法进行介绍，下文描述的纳米阵列激光器制备方法与上文描述的纳米阵列激光器可相互对应参照。The preparation method of the nano-array laser provided by the embodiment of the present invention is introduced below, and the preparation method of the nano-array laser described below and the nano-array laser described above can be referred to in correspondence.
具体请参考图3，图3为本发明实施例提供的一种纳米阵列激光器制备方法的流程图，该制备方法可以包括：Please refer to FIG. 3 for details. FIG. 3 is a flowchart of a nanoarray laser preparation method provided by an embodiment of the present invention. The preparation method may include:
S101：在衬底一侧表面形成半导体材料纳米阵列结构，半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔；在透光导电电极的一侧表面，集成聚拢光束的二阶光栅。S101: Forming a semiconductor material nanoarray structure on one side of the substrate, and a single semiconductor material nanostructure in the semiconductor material nanoarray structure forms a laser source resonator; on one side of the light-transmitting conductive electrode, integrating a second-order grating for focusing the beam.
需要进行说明的是，本实施例中在衬底一侧表面形成半导体材料纳米阵列结构，半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔的步骤，和在透光导电电极的一侧表面，集成二阶光栅的步骤是相互独立的步骤，两者的先后顺序并不限定。两步骤可以分顺序执行，或者也可以同时执行。本实施例并不限定在衬底一侧表面形成半导体材料纳米阵列结构的具体方法。例如，可以采用水热法在衬底一侧表面形成半导体材料纳米阵列结构，或者也可以采用其他方法在衬底一侧表面形成半导体材料纳米阵列结构。It should be noted that in this embodiment, a semiconductor material nanoarray structure is formed on the surface of one side of the substrate, the step of forming a laser source resonator by a single semiconductor material nanostructure in the semiconductor material nanoarray structure, and the step of forming a laser source resonant cavity in a light-transmitting conductive electrode. On the side surface, the steps of integrating the second-order grating are mutually independent steps, and the sequence of the two is not limited. The two steps can be performed sequentially, or can also be performed simultaneously. This embodiment does not limit the specific method for forming the semiconductor material nano-array structure on the surface of one side of the substrate. For example, a hydrothermal method may be used to form a semiconductor material nano-array structure on one side of the substrate, or other methods may be used to form a semiconductor material nano-array structure on one side of the substrate.
S102：将透光导电电极背向二阶光栅的一侧覆盖在半导体材料纳米阵列结构的出光面。S102: Covering the side of the light-transmitting conductive electrode facing away from the second-order grating on the light-emitting surface of the semiconductor material nano-array structure.
需要进行说明的是，通过将透光导电电极背向二阶光栅的一侧覆盖在半导体材料纳米阵列结构的出光面，能够使透光导电电极与半导体材料纳米阵列结构出光面的一侧导电连接。It should be noted that by covering the side of the light-transmitting conductive electrode facing away from the second-order grating on the light-emitting surface of the semiconductor material nano-array structure, the light-transmitting conductive electrode can be conductively connected to one side of the light-emitting surface of the semiconductor material nano-array structure .
S103：半导体材料纳米阵列结构靠向衬底的一侧，与衬底电极导电连接，制成纳米阵列激光器。S103: The side of the semiconductor material nano-array structure close to the substrate is conductively connected with the substrate electrode to form a nano-array laser.
需要进行说明的是，本实施例中通过将半导体材料纳米阵列结构靠向衬底的一侧，与衬底电极导电连接，以使衬底电极和透光导电电极在工作时，能够与外部电路连接，形成泵浦结构。本实施例中纳米阵列激光器制备方法可以参考图4，图4为本发明实施例提供的一种纳米阵列激光器制备方法的流程示意图。It should be noted that in this embodiment, the nano-array structure of semiconductor material is close to the side of the substrate, and is electrically connected to the substrate electrode, so that the substrate electrode and the light-transmitting conductive electrode can be connected to the external circuit when they are working. connected to form a pump structure. For the preparation method of the nano-array laser in this embodiment, reference may be made to FIG. 4 , which is a schematic flowchart of a preparation method of the nano-array laser provided in the embodiment of the present invention.
进一步地，为了保证二阶光栅的聚拢光束效果，上述在透光导电电极的一侧表面，集成二阶光栅，可以包括：Further, in order to ensure the beam concentrating effect of the second-order grating, the above-mentioned integration of the second-order grating on one side of the light-transmitting conductive electrode may include:
根据激光源的激射波长确定二阶光栅的周期、深度和占空比；Determine the period, depth and duty cycle of the second-order grating according to the lasing wavelength of the laser source;
将确定周期、深度和占空比的二阶光栅，集成在透光导电电极的一侧表面。A second-order grating that determines the period, depth and duty cycle is integrated on one side of the light-transmitting conductive electrode.
需要进行说明的是，本实施例中二阶光栅的周期、深度和占空比根据激光源激射波长确定，本实施例中二阶光栅的周期可以设置为100纳米至700纳米之间，二阶光栅的深度可以设置为50纳米至200纳米之间，二阶光栅的占空比可以设置为0.3至0.7之间，具体根据激光源的激射波长进行设定。It should be noted that the period, depth and duty cycle of the second-order grating in this embodiment are determined according to the lasing wavelength of the laser source, and the period of the second-order grating in this embodiment can be set between 100 nanometers and 700 nanometers. The depth of the first-order grating can be set between 50 nanometers and 200 nanometers, and the duty ratio of the second-order grating can be set between 0.3 and 0.7, specifically according to the lasing wavelength of the laser source.
应用本发明实施例提供的纳米阵列激光器制备方法，包括在衬底一侧表面形成半导体材料纳米阵列结构，半导体材料纳米阵列结构中单个半导体材料纳米结构形成激光源谐振腔，在透光导电电极的一侧表面，集成二阶光栅。将透光导电电极背向二阶光栅的一侧覆盖在半导体材料纳米阵列结构的出光面，半导体材料纳米阵列结构靠向衬底的一侧，与衬底电极导电连接，制成纳米阵列激光器。本发明通过在透光导电电极背向与半导体材料纳米阵列结构接触的一侧，集成有聚拢光束的二阶光栅，该二阶光栅的二级衍射用于对半导体材料纳米阵列结构背向衬底的顶端发射的光束进行光反馈和模式选择，实现光束聚拢，降低光束散射角，一级衍射用于实现半导体材料纳米阵列结构的顶端发射的光束垂直表面出射，最终获得稳定低散度光束输出，解决了纳米阵列激光器的激光发散角大的问题，实现了纳米阵列激光器窄线宽、单纵模、稳定低散度光束的输出。此外，根据激光源的激射波长确定二阶光栅的周期、深度和占空比，能够保证二阶光栅的聚拢光束效果。The nano-array laser preparation method provided by the embodiment of the present invention includes forming a semiconductor material nano-array structure on the surface of one side of the substrate, a single semiconductor material nano-structure in the semiconductor material nano-array structure forms a laser source resonator, and the light-transmitting conductive electrode On one surface, a second-order grating is integrated. The side of the light-transmitting conductive electrode facing away from the second-order grating is covered on the light-emitting surface of the semiconductor material nano-array structure, and the side of the semiconductor material nano-array structure close to the substrate is conductively connected with the substrate electrode to form a nano-array laser. In the present invention, a second-order grating for concentrating light beams is integrated on the side of the light-transmitting conductive electrode facing away from the contact with the semiconductor material nano-array structure, and the second-order diffraction of the second-order grating is used to correct the semiconductor material nano-array structure back to the substrate. The beam emitted from the top is subjected to optical feedback and mode selection to achieve beam convergence and reduce the beam scattering angle. The first-order diffraction is used to realize the beam emitted from the top of the semiconductor material nanoarray structure to exit vertically on the surface, and finally obtain a stable low-divergence beam output. The problem of large laser divergence angle of the nano-array laser is solved, and the output of the nano-array laser with narrow line width, single longitudinal mode, and stable low-divergence beam is realized. In addition, the period, depth and duty cycle of the second-order grating are determined according to the lasing wavelength of the laser source, which can ensure the beam focusing effect of the second-order grating.
为了是本发明更便于理解，上述纳米阵列激光器制备方法，具体可以包括以下步骤：In order to make the present invention easier to understand, the above nanoarray laser preparation method may specifically include the following steps:
步骤1：制备P型氮化镓衬底。Step 1: Prepare a P-type gallium nitride substrate.
步骤11：在蓝宝石基底上采用蒸镀的方法制备0.1微米厚度的P型氮化镓薄膜层。Step 11: Prepare a P-type gallium nitride thin film layer with a thickness of 0.1 micron on the sapphire substrate by evaporation.
步骤12：清洗衬底，将P型氮化镓衬底浸泡于装有丙酮溶液的烧杯中，设置水浴温度为60摄氏度，水浴加热10分钟，后将P型氮化镓衬底浸泡于无水乙醇溶液中，设置水浴温度80摄氏度，同样水浴加热10分钟，最后将P型氮化镓衬底置于去离子水中超声振荡10分钟，完成清洗过程，作为衬底。Step 12: Clean the substrate, soak the P-type GaN substrate in a beaker filled with acetone solution, set the temperature of the water bath to 60 degrees Celsius, heat the water bath for 10 minutes, and then soak the P-type GaN substrate in an anhydrous In the ethanol solution, set the temperature of the water bath to 80 degrees Celsius, and heat the same water bath for 10 minutes, and finally place the P-type gallium nitride substrate in deionized water for 10 minutes to complete the cleaning process and use it as a substrate.
步骤2：采用水热法生长硫化镉纳米棒阵列。Step 2: growing cadmium sulfide nanorod arrays by hydrothermal method.
步骤21：在衬底上热蒸发10纳米厚金薄膜作为催化剂，将衬底置于电热鼓风干燥箱内，干燥箱温度设为30摄氏度，时间设为20分钟，得到干燥后的衬底。Step 21: Thermally evaporate a 10nm-thick gold film on the substrate as a catalyst, place the substrate in an electric blast drying oven, set the temperature of the drying oven to 30 degrees Celsius, and set the time to 20 minutes to obtain a dried substrate.
步骤22：按摩尔比3：2取金属镉片与氨基硫脲置于干燥后的衬底上，再量取5毫升去离子水和12毫升乙二胺，同时放入装有聚四氟乙烯内胆的不锈钢反应釜中。Step 22: Take metal cadmium sheet and thiosemicarbazide at a molar ratio of 3:2 and place them on the dried substrate, then measure 5 ml of deionized water and 12 ml of ethylenediamine, and put them in a polytetrafluoroethylene In a stainless steel reaction kettle with a liner.
步骤23：将反应釜置于恒温干燥箱中，恒温干燥箱中温度设置为170摄氏度，时间为24小时，然后自然冷却至室温，得到样品。Step 23: Place the reaction kettle in a constant temperature drying oven. The temperature in the constant temperature drying oven is set at 170 degrees Celsius for 24 hours, and then naturally cooled to room temperature to obtain a sample.
步骤24：取出制备的样品，用蒸馏水清洗，直至洗净，以去除表面附着的杂质。最后，在室温条件下，用氮气枪吹干样品。Step 24: Take out the prepared sample and wash it with distilled water until it is clean, so as to remove the impurities attached to the surface. Finally, the samples were blown dry with a nitrogen gun at room temperature.
步骤3：磁控溅射依次形成二氧化硅绝缘层和银膜。Step 3: Magnetron sputtering to form a silicon dioxide insulating layer and a silver film in sequence.
在制备的样品中硫化镉纳米棒上，先磁控溅射一层10纳米厚度的二氧化硅绝缘层，再溅射一层50纳米厚度的银膜，构成激光源谐振腔。On the cadmium sulfide nanorods in the prepared sample, a silicon dioxide insulating layer with a thickness of 10 nanometers was magnetron sputtered first, and then a silver film with a thickness of 50 nanometers was sputtered to form a laser source resonant cavity.
步骤4：在ITO导电玻璃上制备圆形二阶光栅结构。Step 4: Prepare a circular second-order grating structure on the ITO conductive glass.
步骤41：使用去离子水，以及有机溶剂在水浴锅中对外延片进行清洗，清洗完成后用热板将外延片烘干。采用金属有机化学气相沉积法，在外延片表面沉积一层二氧化硅掩膜层。Step 41: Use deionized water and organic solvent to clean the epitaxial wafer in a water bath, and dry the epitaxial wafer with a hot plate after cleaning. A silicon dioxide mask layer is deposited on the surface of the epitaxial wafer by metal organic chemical vapor deposition.
步骤42：在二氧化硅掩膜层和外延片组成的结构上旋涂一层光刻胶，并依次进行烘烤、曝光、显影、坚模处理，将光栅图形转移到光刻胶上。Step 42: Spin-coat a layer of photoresist on the structure composed of the silicon dioxide mask layer and the epitaxial wafer, and sequentially perform baking, exposure, development, and mold hardening to transfer the grating pattern to the photoresist.
步骤43：采用电感耦合等离子体(ICP)刻蚀技术对光刻胶、二氧化硅掩膜层以及外延片组成的结构进行刻蚀，将圆形光栅图形进一步转移至二氧化硅掩膜层。Step 43: using inductively coupled plasma (ICP) etching technology to etch the structure composed of photoresist, silicon dioxide mask layer and epitaxial wafer, and further transfer the circular grating pattern to the silicon dioxide mask layer.
步骤44：利用水浴锅，把装有去胶液的烧杯放在50摄氏度的水中，将二氧化硅掩膜层放入去胶液中进行水浴去胶，使用热板把二氧化硅掩膜层烘干，并使用等离子体去胶方式对二氧化硅掩膜层综合去胶，然后采用有机溶剂在水浴锅中对二氧化硅掩膜层进行清洗，并用热板进行加热。Step 44: Using a water bath, put the beaker containing the degumming solution in water at 50 degrees Celsius, put the silicon dioxide mask layer into the degumming solution for water bath degumming, and use a hot plate to remove the silicon dioxide masking layer Drying, and comprehensively degumming the silicon dioxide mask layer by using a plasma degumming method, and then using an organic solvent to clean the silicon dioxide mask layer in a water bath, and heating with a hot plate.
步骤45：采用ICP刻蚀技术刻蚀二氧化硅掩膜层与外延片组成的结构，将圆形二阶光栅图形转移至外延片上。Step 45: Using ICP etching technology to etch the structure composed of the silicon dioxide mask layer and the epitaxial wafer, and transfer the circular second-order grating pattern to the epitaxial wafer.
步骤46：去除二氧化硅材料，得到具有圆形二阶光栅图形的外延片。并将剩余的二氧化硅材料去除干净，采用有机溶剂在水浴锅中对外延片进行清洗，清洗完成后使用热板将外延片烘干，得到具有圆形二阶光栅图形的外延片。Step 46: removing the silicon dioxide material to obtain an epitaxial wafer with a circular second-order grating pattern. The remaining silicon dioxide material is removed, and the epitaxial wafer is cleaned in a water bath with an organic solvent. After cleaning, the epitaxial wafer is dried with a hot plate to obtain an epitaxial wafer with a circular second-order grating pattern.
步骤5：覆盖ITO导电玻璃。Step 5: Cover with ITO conductive glass.
将ITO导电玻璃的导电面覆盖在硫化镉纳米阵列顶端，形成电极接触。The conductive surface of the ITO conductive glass is covered on the top of the cadmium sulfide nano-array to form an electrode contact.
步骤6：蒸镀金电极并引线。Step 6: Evaporate gold electrodes and wire them.
在氮化镓衬底的未生长硫化镉纳米棒阵列的干净的区域蒸镀金电极，与电源电压正极相连，ITO导电玻璃导电面与电源负极相连。A gold electrode is vapor-deposited on a clean area of the gallium nitride substrate where the cadmium sulfide nanorod array is not grown, and is connected to the positive electrode of the power supply voltage, and the conductive surface of the ITO conductive glass is connected to the negative electrode of the power supply.
步骤7：对制备的激光源谐振腔与圆形二阶光栅结构进行集成、封装，得到纳米阵列激光器。Step 7: Integrate and package the prepared laser source resonator and circular second-order grating structure to obtain a nano-array laser.
为了使本发明更便于理解，请参考图5至图9，具体说明如下：In order to make the present invention easier to understand, please refer to Fig. 5 to Fig. 9, the specific description is as follows:
图5为本发明实施例提供的一种纳米阵列激光器中光栅深度为80纳米，光栅周期为407.34纳米，占空比为0.44的圆形二阶布拉格光栅的光场能量约束分布仿真图；图6为本发明实施例提供的一种纳米阵列激光器中光栅深度为80纳米，光栅周期为203.67纳米，占空比为0.44的圆形二阶布拉格光栅的光场能量约束分布仿真图。可以看出圆形二阶光栅在所有径向方向上都会进行反馈，对光场在各个方向上都有约束作用。圆形DFB(分布反馈式)二阶光栅的方位偏振引起的环形形状特征，中心处的暗处由于方位角极化而产生的零电场有关。从图5和图6可看出，在合适的范围内，光栅周期越小，刻蚀凹槽越密集，对于光场的约束力越强。Figure 5 is a simulation diagram of the light field energy constraint distribution of a circular second-order Bragg grating with a grating depth of 80 nanometers, a grating period of 407.34 nanometers, and a duty ratio of 0.44 in a nanoarray laser provided by an embodiment of the present invention; Figure 6 It is a simulation diagram of the light field energy constraint distribution of a circular second-order Bragg grating with a grating depth of 80 nanometers, a grating period of 203.67 nanometers, and a duty ratio of 0.44 in a nanoarray laser provided by an embodiment of the present invention. It can be seen that the circular second-order grating will feedback in all radial directions, and has a constraining effect on the light field in all directions. The circular shape feature caused by the azimuthal polarization of the circular DFB (distributed feedback type) second-order grating, the dark part at the center is related to the zero electric field due to the azimuthal polarization. It can be seen from Fig. 5 and Fig. 6 that within an appropriate range, the smaller the grating period is, the denser the etched grooves are, and the stronger the binding force on the light field is.
图7为本发明实施例提供的一种常规纳米阵列激光器纵向截面的二维模型场强分布仿真图；图8为本发明实施例提供的一种二阶光栅分布反馈式纳米阵列激光器纵向截面的二维模型场强分布仿真图。可以看出常规纳米阵列激光器的纳米线阵列发射光场能量分散在阵列顶部和四周，光束叠加后发散角过大，二阶光栅分布反馈式纳米阵列激光器金属表面产生的表面等离子体耦合进入硫化镉纳米棒，激光振荡，场强得到极大的增强后从纳米棒端部发射，光场能量主要集中在纳米棒阵列与光栅交界处的上方，光束散射方向呈聚拢状，能够起到约束、调控、低散度输出光束的效果。Fig. 7 is a two-dimensional model field strength distribution simulation diagram of a longitudinal section of a conventional nanoarray laser provided by an embodiment of the present invention; Fig. 8 is a diagram of a longitudinal section of a second-order grating distributed feedback nanoarray laser provided by an embodiment of the present invention Simulation diagram of the field strength distribution of the 2D model. It can be seen that the light field energy emitted by the nanowire array of the conventional nanoarray laser is dispersed on the top and around the array, and the divergence angle is too large after the beams are superimposed. Nanorods, laser oscillation, the field strength is greatly enhanced and emitted from the end of the nanorods, the energy of the light field is mainly concentrated above the junction of the nanorod array and the grating, and the beam scattering direction is gathered, which can be constrained and regulated , The effect of low divergence output beam.
图9为本发明实施例提供的一种二阶光栅分布反馈式纳米阵列激光器在510纳米至520纳米的波长范围的全局电场能量仿真图。其中，横坐标为波长，纵坐标为激光的输出能量，可以看出圆形二阶光栅具有压缩线宽和模式选择的作用，纳米阵列激光器谐振腔在514.3纳米处产生激发波长，线宽为1.2皮米，实现了优质的窄线宽、单模、高稳定激光输出。FIG. 9 is a simulation diagram of global electric field energy in the wavelength range of 510 nm to 520 nm of a second-order grating distributed feedback nanoarray laser provided by an embodiment of the present invention. Among them, the abscissa is the wavelength, and the ordinate is the output energy of the laser. It can be seen that the circular second-order grating has the function of compressing the line width and mode selection. The nanoarray laser resonator generates an excitation wavelength at 514.3 nanometers, and the line width is 1.2 picometer, to achieve high-quality narrow linewidth, single-mode, high-stable laser output.
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其它实施例的不同之处，各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。Each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same or similar parts of each embodiment can be referred to each other. As for the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and for relevant details, please refer to the description of the method part.
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系属于仅仅用来将一个实体或者操作与另一个实体或者操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其他任何变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。Finally, it should also be noted that in this article, relationships such as first and second etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations, any such actual relationship or order exists. Furthermore, the term "comprises", "comprising", or any other variation is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also items not expressly listed. other elements, or also include elements inherent in such a process, method, article, or apparatus.
以上对本发明所提供的一种纳米阵列激光器及纳米阵列激光器制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。A nano-array laser provided by the present invention and a preparation method of the nano-array laser have been introduced in detail above. In this paper, specific examples are used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only for helping understanding The method of the present invention and its core idea; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation and scope of application. In summary, the content of this specification should not be construed as a limitation of the invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554436.4ACN116544785A (en) | 2023-05-16 | 2023-05-16 | A nano-array laser and a method for preparing the nano-array laser |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554436.4ACN116544785A (en) | 2023-05-16 | 2023-05-16 | A nano-array laser and a method for preparing the nano-array laser |
| Publication Number | Publication Date |
|---|---|
| CN116544785Atrue CN116544785A (en) | 2023-08-04 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310554436.4APendingCN116544785A (en) | 2023-05-16 | 2023-05-16 | A nano-array laser and a method for preparing the nano-array laser |
| Country | Link |
|---|---|
| CN (1) | CN116544785A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1602570A (en)* | 2001-11-16 | 2005-03-30 | 福托纳米公司 | Structure and Array of Surface Emitting DFB Lasers for Broadband Communication Systems |
| US20090147818A1 (en)* | 2007-12-05 | 2009-06-11 | International Business Machines Corporation | Enhanced surface-emitting photonic device |
| CN101895057A (en)* | 2010-05-24 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Mutually injection-locked two-dimensional surface emitting laser array |
| US20130016749A1 (en)* | 2011-07-13 | 2013-01-17 | Mitsubishi Electric Corporation | Surface emitting laser diode |
| CN104662750A (en)* | 2012-02-28 | 2015-05-27 | 康宁股份有限公司 | Surface emitting multi-wavelength distributed feedback concentric ring laser |
| JP2016054314A (en)* | 2015-12-01 | 2016-04-14 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | Multimode monolithic vertical cavity surface emitting laser array and laser system including the same |
| CN109687286A (en)* | 2019-01-22 | 2019-04-26 | 长春理工大学 | A kind of bidirectional output semiconductor laser |
| US20210104861A1 (en)* | 2018-01-29 | 2021-04-08 | Ronald LaComb | Concentric cylindrical circumferential laser |
| CN114256737A (en)* | 2021-12-15 | 2022-03-29 | 电子科技大学 | Narrow linewidth DFB nanoplasma laser and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1602570A (en)* | 2001-11-16 | 2005-03-30 | 福托纳米公司 | Structure and Array of Surface Emitting DFB Lasers for Broadband Communication Systems |
| US20090147818A1 (en)* | 2007-12-05 | 2009-06-11 | International Business Machines Corporation | Enhanced surface-emitting photonic device |
| CN101895057A (en)* | 2010-05-24 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Mutually injection-locked two-dimensional surface emitting laser array |
| US20130016749A1 (en)* | 2011-07-13 | 2013-01-17 | Mitsubishi Electric Corporation | Surface emitting laser diode |
| CN104662750A (en)* | 2012-02-28 | 2015-05-27 | 康宁股份有限公司 | Surface emitting multi-wavelength distributed feedback concentric ring laser |
| JP2016054314A (en)* | 2015-12-01 | 2016-04-14 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | Multimode monolithic vertical cavity surface emitting laser array and laser system including the same |
| US20210104861A1 (en)* | 2018-01-29 | 2021-04-08 | Ronald LaComb | Concentric cylindrical circumferential laser |
| CN109687286A (en)* | 2019-01-22 | 2019-04-26 | 长春理工大学 | A kind of bidirectional output semiconductor laser |
| CN114256737A (en)* | 2021-12-15 | 2022-03-29 | 电子科技大学 | Narrow linewidth DFB nanoplasma laser and preparation method thereof |
| Publication | Publication Date | Title |
|---|---|---|
| TWI483498B (en) | Multimode vertical-cavity surface-emitting laser arrays | |
| TWI489714B (en) | Vertical cavity surface emitting laser with aperiodic grating | |
| CN101667715B (en) | A single-mode high-power vertical-cavity surface-emitting laser and its manufacturing method | |
| CN108028513B (en) | Nanowire laser structure and fabrication method | |
| CN100461558C (en) | Die structure and manufacturing method of quantum cascade laser modulated by one-dimensional photonic crystal | |
| CN114256737B (en) | A narrow linewidth DFB nanoplasma laser and its preparation method | |
| CN107959224B (en) | A metal cavity based surface plasmon laser | |
| CN101938083B (en) | Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide | |
| CN104283111B (en) | The edge emitting Terahertz quantum cascaded laser of the wedge structure of integrated grating | |
| CN110197992B (en) | High-efficiency VCSEL chip and manufacturing method thereof | |
| CN106785829B (en) | Distributed feedback laser, manufacturing method thereof, and distributed feedback laser array | |
| CN103915758B (en) | A multi-mode interference structure terahertz quantum cascade laser and its manufacturing method | |
| CN110890690B (en) | A semiconductor laser coherent array and its preparation method | |
| CN104682194A (en) | Double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave | |
| CN113488846B (en) | Sub-wavelength grating and vertical cavity surface emitting laser | |
| CN207938961U (en) | Surface plasmon laser based on metal cavity | |
| CN212485795U (en) | VCSEL laser | |
| CN116544785A (en) | A nano-array laser and a method for preparing the nano-array laser | |
| CN112038886B (en) | VCSEL laser and manufacturing method thereof | |
| CN118801217A (en) | A vertical cavity surface emitting laser and a method for manufacturing the same | |
| CN117977377A (en) | Photonic crystal surface emitting laser and method for manufacturing the same | |
| CN104393485B (en) | Laser array relevant device and preparation method thereof | |
| CN100399656C (en) | Photonic crystal waveguide distributed feedback laser and manufacturing method | |
| Dang et al. | Higher-performance Fabry-Perot microlaser enabled by a quadrilateral microwire via Ag nanowires decoration | |
| CN113258438B (en) | VCSEL array chip for emitting coherent light |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |