技术领域technical field
本发明涉及光电子集成器件技术领域，尤其涉及一种电极分层爬坡的薄膜铌酸锂调制器及其制备方法。The invention relates to the technical field of optoelectronic integrated devices, in particular to a thin-film lithium niobate modulator with layered and sloped electrodes and a preparation method thereof.
背景技术Background technique
随着5G、多媒体等技术的崛起和普及，物联网、高清视频业务、虚拟现实（VirtualReality，VR）、增强现实（Augmented Reality，AR）等应用正在逐渐走进我们的生活，信息容量和数据通业务会持续爆发性增长。高性能电光调制器作为通信链路中的核心件，在数字及模拟微波光子链路中扮演着极其重要的角色，一直以来是国内外研究热点。With the rise and popularization of 5G, multimedia and other technologies, applications such as the Internet of Things, high-definition video services, virtual reality (Virtual Reality, VR), and augmented reality (Augmented Reality, AR) are gradually entering our lives. The business will continue to grow explosively. As the core component of the communication link, the high-performance electro-optic modulator plays an extremely important role in the digital and analog microwave photonic links, and has always been a research hotspot at home and abroad.
铌酸锂由于其优异的电光、非线性和从可见光到中红外的大透明窗口，被广泛作为电光调制器的材料。近年来，绝缘体上铌酸锂（LN-on-insulator，LNOI）平台已成为集成高性能电光调制器的一个有前途的平台，基于LNOI平台的方法中，在低折射率衬底(如SiO2)的顶部粘结一层单晶、亚微米厚的铌酸锂薄膜，通过干法蚀刻铌酸锂器件层形成波导，使得一系列薄膜铌酸锂光子器件具有高折射率对比度和紧密的光学模式限制。目前，基于LNOI的集成电光调制器因其小体积，高性能的特点已有许多科研人员投入研究。Lithium niobate is widely used as a material for electro-optic modulators due to its excellent electro-optic properties, nonlinearity, and large transparent window from visible to mid-infrared. In recent years, the lithium niobate on insulator (LN-on-insulator, LNOI) platform has become a promising platform for integrating high-performance electro-optic modulators. ) is bonded with a layer of single-crystal, submicron-thick lithium niobate thin film, and the waveguide is formed by dry etching the lithium niobate device layer, making a series of thin-film lithium niobate photonic devices with high refractive index contrast and compact optical mode limit. At present, the integrated electro-optic modulator based on LNOI has been researched by many researchers because of its small size and high performance.
然而现有的电光调制器采用的是共面电极结构，即电极下沿与光波导下沿在同一平面上。通过外加电场与光场的相互作用，实现将电信号转换为光信号，但是电极不能转弯，不利于后端封装测试，通常直接采用压探针的测试方法。此外，也有部分技术通过在薄膜铌酸锂表面沉积一层二氧化硅，再在二氧化硅上通过沉积与剥离工艺形成金电极，利用此种方法可以使电极弯曲便于封装，但是因为在电光相互作用区电极与波导间有一层二氧化硅，外加电场与波导内光场相互作用强度有限，需要较高的驱动电压，增大了电光调制器功耗，不能与CMOS(Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）兼容，限制了光电子器件的集成。However, existing electro-optic modulators use a coplanar electrode structure, that is, the lower edge of the electrode and the lower edge of the optical waveguide are on the same plane. Through the interaction between the applied electric field and the optical field, the electrical signal is converted into an optical signal, but the electrode cannot be turned, which is not conducive to the back-end packaging test. Usually, the test method of pressing the probe is directly used. In addition, there are also some technologies that deposit a layer of silicon dioxide on the surface of thin-film lithium niobate, and then form gold electrodes on the silicon dioxide through deposition and lift-off processes. This method can make the electrodes bend and facilitate packaging, but because of the electro-optical interaction There is a layer of silicon dioxide between the electrode and the waveguide in the active area, and the interaction between the external electric field and the optical field in the waveguide is limited, requiring a higher driving voltage, which increases the power consumption of the electro-optic modulator, and cannot be complementary to CMOS (Complementary Metal Oxide Semiconductor, metal-oxide-semiconductor) compatibility, which limits the integration of optoelectronic devices.
发明内容Contents of the invention
基于上述问题，本发明提供了一种电极分层爬坡的薄膜铌酸锂调制器及其制备方法，以缓解现有技术中的上述技术问题。Based on the above problems, the present invention provides a thin-film lithium niobate modulator with layered and sloped electrodes and a preparation method thereof, so as to alleviate the above technical problems in the prior art.
（一）技术方案(1) Technical solution
本发明的一个方面，提供一种电极分层爬坡的薄膜铌酸锂调制器，包括：衬底层；二氧化硅层，制备于衬底上；铌酸锂薄膜层，制备于二氧化硅层上，铌酸锂薄膜层上制备有马赫-曾德尔结构，马赫-曾德尔结构包括：输入端，用于输入光的注入，并将输入光分为两路光；两条光波导，形成于铌酸锂薄膜层表面，两条光波导用于分别传输上述两路光并在外部电场作用下进行电光调制；以及输出端，用于将经过调制后的两路光进行合束并输出；电极层，包括多条设置于每条光波导旁的条形电极，使得条形电极在通电后形成电场对两条光波导内的光进行调制，条形电极和光波导存在交叠区域；以及多层介质隔离层，设置于条形电极和光波导的交叠区域且夹设于光波导和条形电极之间，以在条形电极和光波导之间产生隔离作用。One aspect of the present invention provides a thin-film lithium niobate modulator with layered and sloped electrodes, comprising: a substrate layer; a silicon dioxide layer prepared on the substrate; a lithium niobate thin film layer prepared on the silicon dioxide layer Above, a Mach-Zehnder structure is prepared on the lithium niobate thin film layer, and the Mach-Zehnder structure includes: an input end for injecting input light and splitting the input light into two paths of light; two optical waveguides formed in On the surface of the lithium niobate thin film layer, two optical waveguides are used to respectively transmit the above two paths of light and perform electro-optical modulation under the action of an external electric field; and an output terminal is used to combine and output the modulated two paths of light; the electrode layer, including a plurality of strip-shaped electrodes arranged next to each optical waveguide, so that the strip-shaped electrodes form an electric field to modulate the light in the two optical waveguides after being energized, and the strip-shaped electrodes and the optical waveguides have overlapping regions; and multilayer The dielectric isolation layer is arranged in the overlapping area of the strip electrode and the optical waveguide and interposed between the optical waveguide and the strip electrode, so as to generate an isolation effect between the strip electrode and the optical waveguide.
根据本发明实施例，多层介质隔离层上下堆叠设置，位于上方的介质隔离层的面积小于该介质隔离层下方的介质隔离层的面积。According to an embodiment of the present invention, multiple dielectric isolation layers are stacked up and down, and the area of the upper dielectric isolation layer is smaller than the area of the dielectric isolation layer below the dielectric isolation layer.
根据本发明实施例，条形电极在经过交叠区域时由于多层介质隔离层的设置使得条形电极存在分层逐级爬坡抬高的结构。According to the embodiment of the present invention, when the strip electrodes pass through the overlapping region, the strip electrodes have a layered and step-by-step climbing structure due to the arrangement of multiple dielectric isolation layers.
根据本发明实施例，条形电极在经过交叠区域时存在转弯的结构。According to an embodiment of the present invention, the strip electrode has a turning structure when passing through the overlapping area.
根据本发明实施例，多层介质隔离层的制备材料选自二氧化硅或者氮化硅。According to an embodiment of the present invention, the preparation material of the multi-layer dielectric isolation layer is selected from silicon dioxide or silicon nitride.
根据本发明实施例，多层介质隔离层包括两层介质隔离层。According to an embodiment of the present invention, the multi-layer dielectric isolation layer includes two dielectric isolation layers.
根据本发明实施例，多层介质隔离层包括三层及以上介质隔离层。According to an embodiment of the present invention, the multi-layer dielectric isolation layer includes three or more dielectric isolation layers.
根据本发明实施例，输入端包括分束结构，分束结构的分光比为1:1，分束结构为Y分支、定向耦合器或者多模干涉仪。According to an embodiment of the present invention, the input end includes a beam splitting structure with a splitting ratio of 1:1, and the beam splitting structure is a Y branch, a directional coupler or a multimode interferometer.
根据本发明实施例，输出端包括合束结构，合束结构为Y分支、定向耦合器或者多模干涉仪。According to an embodiment of the present invention, the output end includes a beam combining structure, and the beam combining structure is a Y branch, a directional coupler or a multimode interferometer.
本发明的另一方面，提供一种用于制备上述电极分层爬坡的薄膜铌酸锂调制器的制备方法，包括：在衬底层上制备二氧化硅层和铌酸锂薄膜层；在铌酸锂薄膜层上制备马赫-曾德尔结构；规划条形电极路径，在条形电极路径中和光波导的交叠区域处的铌酸锂薄膜上制备多层介质隔离层；以及在每条光波导旁及交叠区域处制备条形电极，完成电极分层爬坡的薄膜铌酸锂调制器的制备。Another aspect of the present invention provides a method for preparing a thin-film lithium niobate modulator for layered climbing of the above electrodes, comprising: preparing a silicon dioxide layer and a lithium niobate thin film layer on the substrate layer; The Mach-Zehnder structure is prepared on the lithium niobate film layer; the strip electrode path is planned, and a multi-layer dielectric isolation layer is prepared on the lithium niobate film at the overlapping area of the strip electrode path and the optical waveguide; and each optical waveguide Strip electrodes are prepared at the side and overlapping regions to complete the preparation of thin-film lithium niobate modulators with layered and sloped electrodes.
（二）有益效果(2) Beneficial effects
从上述技术方案可以看出，本发明电极分层爬坡的薄膜铌酸锂调制器及其制备方法至少具有以下有益效果其中之一或其中一部分：It can be seen from the above technical solutions that the thin-film lithium niobate modulator with layered and sloped electrodes of the present invention and its preparation method have at least one or part of the following beneficial effects:
（1）实现了条形电极与光波导交叠区域的物理分离，在为非交叠区域提供了高电光作用的同时避免了交叠区域的金属吸收，实现高效电光转换；(1) Realized the physical separation of the strip electrode and the overlapping area of the optical waveguide, provided high electro-optic effect for the non-overlapping area and avoided metal absorption in the overlapping area, and realized efficient electro-optic conversion;
（2）减小了每层介质隔离层的刻蚀难度和金属爬台的厚度不均匀性；(2) Reduce the etching difficulty of each layer of dielectric isolation layer and the thickness unevenness of metal climbing platform;
（3）扩展了金属电极与光波导交叠区域的隔离方法，可实现在芯片上集成金属电阻、金属电极，有利于实现更优化的芯片电光封装和片上大规模集成。(3) The isolation method for the overlapping area of the metal electrode and the optical waveguide has been expanded to realize the integration of metal resistors and metal electrodes on the chip, which is conducive to the realization of more optimized chip electro-optical packaging and large-scale integration on the chip.
附图说明Description of drawings
图1为本发明实施例的电极分层爬坡的薄膜铌酸锂调制器的俯视角度的结构示意图。FIG. 1 is a structural schematic diagram of a thin-film lithium niobate modulator with layered and sloped electrodes according to an embodiment of the present invention viewed from a top view.
图2为本发明实施例的电极分层爬坡的薄膜铌酸锂调制器的剖视角度的结构示意图。FIG. 2 is a structural schematic diagram of a cross-sectional angle of a thin-film lithium niobate modulator with layered and sloped electrodes according to an embodiment of the present invention.
图3为本发明实施例的电极分层爬坡的薄膜铌酸锂调制器的制备方法的流程图。FIG. 3 is a flow chart of a method for preparing a thin-film lithium niobate modulator with layered and sloped electrodes according to an embodiment of the present invention.
具体实施方式Detailed ways
本发明提供了一种电极分层爬坡的薄膜铌酸锂调制器及其制备方法，通过在铌酸锂薄膜的光波导与条形电极交叠区域制作多层介质隔离层，使电光相互作用区电极为共面行波电极，光波导与条形电极的交叠区域为通过多层介质隔离层将条形电极与光波导在竖直方向分离开，减小了金属吸收造成的光损耗。The invention provides a thin-film lithium niobate modulator with layered and climbing electrodes and a preparation method thereof. A multi-layer dielectric isolation layer is made in the overlapping area of the optical waveguide and the strip-shaped electrode of the lithium niobate film to make the electro-optical interaction The area electrode is a coplanar traveling wave electrode, and the overlapping area of the optical waveguide and the strip electrode is to separate the strip electrode and the optical waveguide in the vertical direction through a multi-layer dielectric isolation layer, which reduces the optical loss caused by metal absorption.
马赫-曾德尔调制器是目前使用最广泛的电光调制器类型，马赫-曾德尔结构的无源光波导部分包括输入、输出波导，两条波导臂、分束结构、合束结构，其中分束结构、合束结构可以是Y分支、定向耦合器或者多模干涉仪。其工作原理为：输入光由输入波导注入，经过分束结构被平均分成两路，分别进入两条波导臂，通过施加电场在波导臂上，利用铌酸锂的电光效应改变波导臂的折射率，使得两束光的光程不同，从而在合束结构处汇合时有相位差，相位差的不同导致输出光的强度不同，以此实现强度调制的作用。The Mach-Zehnder modulator is currently the most widely used type of electro-optic modulator. The passive optical waveguide part of the Mach-Zehnder structure includes input and output waveguides, two waveguide arms, a beam splitting structure, and a beam combining structure. The structure, beam combining structure can be Y branch, directional coupler or multimode interferometer. Its working principle is: the input light is injected by the input waveguide, and is divided into two paths by the beam splitting structure, and enters the two waveguide arms respectively. By applying an electric field on the waveguide arms, the refractive index of the waveguide arms is changed by the electro-optic effect of lithium niobate , so that the optical paths of the two beams are different, so that there is a phase difference when they converge at the beam combining structure, and the difference in the phase difference leads to different intensities of the output light, thereby realizing the effect of intensity modulation.
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
图1为本发明实施例的电极分层爬坡的薄膜铌酸锂调制器的俯视角度的结构示意图。图2为本发明实施例的电极分层爬坡的薄膜铌酸锂调制器的剖视角度的结构示意图，具体为沿图1中的A-A′所示位置剖开后的结构示意图。FIG. 1 is a structural schematic diagram of a thin-film lithium niobate modulator with layered and sloped electrodes according to an embodiment of the present invention viewed from a top view. FIG. 2 is a structural schematic diagram of a cross-sectional angle of a thin-film lithium niobate modulator with electrode layered climbing according to an embodiment of the present invention, specifically a schematic structural diagram after being cut along the position shown by A-A' in FIG. 1 .
在本发明实施例中，提供一种电极分层爬坡的薄膜铌酸锂调制器，结合图1至图2所示，电极分层爬坡的薄膜铌酸锂调制器包括：In an embodiment of the present invention, a thin-film lithium niobate modulator with layered and sloped electrodes is provided. Referring to FIG. 1 to FIG. 2 , the thin-film lithium niobate modulator with layered and sloped electrodes includes:
衬底层10；substrate layer 10;
二氧化硅层20，制备于衬底10上；A silicon dioxide layer 20 prepared on the substrate 10;
铌酸锂薄膜层30，制备于二氧化硅层20上，铌酸锂薄膜层30上制备有马赫-曾德尔结构，马赫-曾德尔结构包括：The lithium niobate thin film layer 30 is prepared on the silicon dioxide layer 20, and a Mach-Zehnder structure is prepared on the lithium niobate thin film layer 30, and the Mach-Zehnder structure includes:
输入端31，用于输入光的注入，并将输入光分为两路光；The input end 31 is used for injecting the input light and splitting the input light into two paths of light;
两条光波导32，形成于铌酸锂薄膜层表面，两条光波导32用于分别传输上述两路光；以及Two optical waveguides 32 are formed on the surface of the lithium niobate thin film layer, and the two optical waveguides 32 are used to transmit the above two paths of light respectively; and
输出端33，用于将经过调制后的两路光进行合束并输出；The output terminal 33 is used to combine and output the two modulated lights;
电极层，包括多条设置于每条光波导32旁的条形电极50，使得条形电极50在通电后形成电场对两条光波导32内的光进行调制，条形电极50和光波导32存在交叠区域；以及The electrode layer includes a plurality of strip-shaped electrodes 50 arranged beside each optical waveguide 32, so that the strip-shaped electrodes 50 form an electric field to modulate the light in the two optical waveguides 32 after electrification, and the strip-shaped electrodes 50 and the optical waveguides 32 exist overlapping areas; and
多层介质隔离层，设置于条形电极和光波导32的交叠区域且夹设于光波导32和条形电极之间，以在条形电极和光波导32之间产生隔离作用。The multi-layer dielectric isolation layer is arranged in the overlapping area of the strip electrode and the optical waveguide 32 and sandwiched between the optical waveguide 32 and the strip electrode, so as to generate isolation between the strip electrode and the optical waveguide 32 .
根据本发明实施例，多层介质隔离层的制备材料选自二氧化硅或者氮化硅。According to an embodiment of the present invention, the preparation material of the multi-layer dielectric isolation layer is selected from silicon dioxide or silicon nitride.
根据本发明实施例，多层介质隔离层包括两层介质隔离层；或者多层介质隔离层包括三层及以上的介质隔离层，例如包括三层介质隔离层、四层介质隔离层、五层介质隔离层、或根据实际需求设置更多层的介质隔离层。According to an embodiment of the present invention, the multi-layer dielectric isolation layer includes two dielectric isolation layers; or the multi-layer dielectric isolation layer includes three or more dielectric isolation layers, for example, three dielectric isolation layers, four dielectric isolation layers, five dielectric isolation layers Media isolation layer, or set more layers of media isolation layer according to actual needs.
根据本发明实施例，多层介质隔离层上下堆叠设置，位于上方的介质隔离层的面积小于该介质隔离层下方的介质隔离层的面积。条形电极50在经过交叠区域时由于多层介质隔离层的设置使得条形电极存在分层逐级爬坡抬高的结构和转弯的结构。如图2中所示，多层介质隔离层包括两层介质隔离层，分别为位于下方的第一介质隔离层41和位于第一介质隔离层41上的第二介质隔离层42，由图2可见，第二介质隔离层42的面积小于第一介质隔离层41的面积，即多层介质隔离层的面积沿自衬底向上延伸的方向逐渐减小，由此，在第一介质隔离层41和第二介质隔离层42的边缘区域产生台阶结构，当条形电极在经过交叠区域a、b、c、d时，沿着台阶结构斜向上分层逐级的爬坡抬高，上述设置减小了每层介质隔离层的刻蚀难度和金属电极爬台的厚度不均匀性，在交叠区域通过多层介质隔离层将条形电极50与光波导32在竖直方向分离开，减小了金属吸收造成的光损耗。According to an embodiment of the present invention, multiple dielectric isolation layers are stacked up and down, and the area of the upper dielectric isolation layer is smaller than the area of the dielectric isolation layer below the dielectric isolation layer. When the strip electrode 50 passes through the overlapping area, due to the arrangement of the multi-layer dielectric isolation layer, the strip electrode has a layered and gradually ascending structure and a turning structure. As shown in Figure 2, the multilayer dielectric isolation layer comprises two layers of dielectric isolation layers, which are respectively the first dielectric isolation layer 41 positioned below and the second dielectric isolation layer 42 positioned on the first dielectric isolation layer 41, as shown in Figure 2 It can be seen that the area of the second dielectric isolation layer 42 is smaller than the area of the first dielectric isolation layer 41, that is, the area of the multilayer dielectric isolation layer gradually decreases along the direction extending upward from the substrate, thus, in the first dielectric isolation layer 41 and the edge region of the second dielectric isolation layer 42 to form a stepped structure, when the strip-shaped electrodes pass through the overlapping regions a, b, c, and d, they will be lifted up step by step along the stepped structure obliquely, and the above settings The etching difficulty of each layer of dielectric isolation layer and the thickness unevenness of the metal electrode climbing platform are reduced, and the strip electrode 50 is separated from the optical waveguide 32 in the vertical direction by a multi-layer dielectric isolation layer in the overlapping area, reducing the Light loss caused by metal absorption is reduced.
根据本发明实施例，交叠区域的数量根据实际应用情况确定，如图1中所示包括交叠区域a、交叠区域b、交叠区域c、交叠区域d四个交叠区域，交叠区域a和交叠区域b之间所在的调制区为射频调制区，交叠区域c和交叠区域d之间所在的调制区为直流调制区。不同的交叠区域设置的介质隔离层的面积大小和层数，可以根据实际应用情况进行调整。According to the embodiment of the present invention, the number of overlapping regions is determined according to the actual application situation. As shown in FIG. 1, four overlapping regions including overlapping region a, overlapping region b, overlapping region c and overlapping region d are The modulation area located between the overlapping area a and the overlapping area b is the radio frequency modulation area, and the modulation area located between the overlapping area c and the overlapping area d is the direct current modulation area. The area size and number of layers of the dielectric isolation layer set in different overlapping regions can be adjusted according to actual application conditions.
根据本发明实施例，输入端31包括分束结构，分束结构的分光比为1:1，分束结构为Y分支、定向耦合器或者多模干涉仪。According to an embodiment of the present invention, the input end 31 includes a beam splitting structure with a splitting ratio of 1:1, and the beam splitting structure is a Y branch, a directional coupler or a multimode interferometer.
根据本发明实施例，输出端33包括合束结构，合束结构为Y分支、定向耦合器或者多模干涉仪。According to an embodiment of the present invention, the output end 33 includes a beam combining structure, and the beam combining structure is a Y branch, a directional coupler or a multimode interferometer.
本发明还提供一种电极分层爬坡的薄膜铌酸锂调制器的制备方法，用于制备上述的电极分层爬坡的薄膜铌酸锂调制器，结合图3和图1、图2所示，电极分层爬坡的薄膜铌酸锂调制器的制备方法包括：The present invention also provides a method for preparing a thin-film lithium niobate modulator with layered and sloped electrodes, which is used to prepare the above-mentioned thin-film lithium niobate modulator with layered and sloped electrodes. Shown, the preparation method of thin-film lithium niobate modulator with electrode layered climbing includes:
操作S1：在衬底层10上制备二氧化硅层20和铌酸锂薄膜层30；Operation S1: preparing a silicon dioxide layer 20 and a lithium niobate thin film layer 30 on the substrate layer 10;
操作S2：在铌酸锂薄膜层30上制备马赫-曾德尔结构，马赫-曾德尔结构包括两条光波导32；Operation S2: preparing a Mach-Zehnder structure on the lithium niobate thin film layer 30, the Mach-Zehnder structure including two optical waveguides 32;
操作S3：规划条形电极路径，在条形电极路径中和光波导32的交叠区域处的铌酸锂薄膜上制备多层介质隔离层；以及Operation S3: planning a strip-shaped electrode path, and preparing a multi-layer dielectric isolation layer on the lithium niobate thin film at the overlapping region of the strip-shaped electrode path and the optical waveguide 32; and
操作S4：在每条光波导32旁及交叠区域处制备条形电极50，完成电极分层爬坡的薄膜铌酸锂调制器的制备。Operation S4: Prepare strip-shaped electrodes 50 at the sides and overlapping regions of each optical waveguide 32, and complete the preparation of a thin-film lithium niobate modulator with layered and sloped electrodes.
根据本发明实施例，在操作S1、操作S2中，在衬底层10上制备二氧化硅层20和铌酸锂薄膜层30，得到绝缘体上薄膜铌酸锂结构，也可以直接基于由绝缘体上薄膜铌酸锂构成的晶圆加工无源波导得到马赫-曾德尔结构，例如通过光刻配合刻蚀技术在铌酸锂薄膜上30制备输入端31，两条光波导32，以及输出端33；输入端31包括分束结构，分束结构的分光比为1:1，分束结构为Y分支、定向耦合器或者多模干涉仪。输出端33包括合束结构，合束结构为Y分支、定向耦合器或者多模干涉仪。According to the embodiment of the present invention, in operation S1 and operation S2, a silicon dioxide layer 20 and a lithium niobate thin film layer 30 are prepared on the substrate layer 10 to obtain a thin film lithium niobate structure on an insulator, which can also be directly based on the thin film on insulator The passive waveguide made of lithium niobate is processed into a Mach-Zehnder structure, for example, the input end 31, two optical waveguides 32, and the output end 33 are prepared on the lithium niobate thin film 30 through photolithography and etching technology; The end 31 includes a beam splitting structure with a splitting ratio of 1:1, and the beam splitting structure is a Y branch, a directional coupler or a multimode interferometer. The output end 33 includes a beam combining structure, and the beam combining structure is a Y branch, a directional coupler or a multimode interferometer.
根据本发明实施例，在操作S3中，按规划好的条形电极路径，使用等离子增强化学气相沉积工艺，在铌酸锂薄膜层上沉积一定厚度的介质薄膜，再通过干法或湿法刻蚀得到位于条形电极路径中和光波导32的交叠区域（如图1中所示的交叠区域a、交叠区域b、交叠区域c、交叠区域d）处的第一介质隔离层；然后通过相同的工艺在第一层介质隔离层上制备第二介质隔离层，以此类推，可以根据实际应用制备更多层的介质隔离层。介质隔离层的形状可以为矩形、圆形或其他形状。According to an embodiment of the present invention, in operation S3, according to the planned strip-shaped electrode path, a dielectric film with a certain thickness is deposited on the lithium niobate film layer by using a plasma-enhanced chemical vapor deposition process, and then dry or wet etching etch to obtain the first dielectric isolation layer located in the strip-shaped electrode path and the overlapping area of the optical waveguide 32 (as shown in Figure 1, overlapping area a, overlapping area b, overlapping area c, overlapping area d) ; Then prepare a second dielectric isolation layer on the first dielectric isolation layer by the same process, and so on, more layers of dielectric isolation layers can be prepared according to practical applications. The shape of the dielectric isolation layer can be rectangular, circular or other shapes.
根据本发明实施例，在操作S4中，通过电子束蒸发工艺在铌酸锂薄膜层30上沉积一层金，依据规划好的条形电极路径再通过剥离工艺形成电极层，结合图1和图2所示，电极层包括多条设置于每条光波导32旁的条形电极50，使得条形电极50在通电后形成电场对两条光波导32内的光进行调制，条形电极50和光波导32存在的交叠区域（如图1中所示的交叠区域a、交叠区域b、交叠区域c、交叠区域d）内，多层介质隔离层夹设于光波导32和条形电极50之间，以在条形电极50和光波导32之间产生隔离作用，通过上述设置，使电光相互作用区电极为共面行波电极，光波导32与条形电极50的交叠区域为通过多层介质隔离层将条形电极50与光波导32在竖直方向分离开，减小了金属吸收造成的光损耗。According to an embodiment of the present invention, in operation S4, a layer of gold is deposited on the lithium niobate thin film layer 30 through an electron beam evaporation process, and an electrode layer is formed through a peeling process according to the planned strip-shaped electrode path, combined with FIG. 1 and FIG. 2, the electrode layer includes a plurality of strip-shaped electrodes 50 arranged beside each optical waveguide 32, so that the strip-shaped electrodes 50 form an electric field to modulate the light in the two optical waveguides 32 after electrification, and the strip-shaped electrodes 50 and the light In the overlapping area where the waveguide 32 exists (the overlapping area a, overlapping area b, overlapping area c, and overlapping area d shown in Figure 1), the multilayer dielectric isolation layer is sandwiched between the optical waveguide 32 and the strip Shaped electrodes 50, to produce isolation between the strip electrodes 50 and the optical waveguide 32, through the above-mentioned settings, the electrodes in the electro-optic interaction area are coplanar traveling wave electrodes, and the overlapping area between the optical waveguide 32 and the strip electrodes 50 In order to separate the strip electrode 50 from the optical waveguide 32 in the vertical direction through multiple dielectric isolation layers, the optical loss caused by metal absorption is reduced.
至此，已经结合附图对本发明实施例进行了详细描述。需要说明的是，在附图或说明书正文中，未绘示或描述的实现方式，均为所属技术领域中普通技术人员所知的形式，并未进行详细说明。此外，上述对各元件和方法的定义并不仅限于实施例中提到的各种具体结构、形状或方式，本领域普通技术人员可对其进行简单地更改或替换。So far, the embodiments of the present invention have been described in detail with reference to the accompanying drawings. It should be noted that, in the accompanying drawings or in the text of the specification, implementations that are not shown or described are forms known to those of ordinary skill in the art, and are not described in detail. In addition, the above definitions of each element and method are not limited to the various specific structures, shapes or methods mentioned in the embodiments, and those skilled in the art can easily modify or replace them.
依据以上描述，本领域技术人员应当对本发明电极分层爬坡的薄膜铌酸锂调制器及其制备方法有了清楚的认识。Based on the above description, those skilled in the art should have a clear understanding of the thin-film lithium niobate modulator with layered and sloped electrodes of the present invention and its preparation method.
综上所述，本发明提供了一种电极分层爬坡的薄膜铌酸锂调制器及其制备方法，通过在光波导与电极交叠区域制作多层介质隔离层，将电极与波导在竖直方向分离开，减小了金属吸收造成的光损耗。In summary, the present invention provides a thin-film lithium niobate modulator with layered electrodes and a preparation method thereof. By making a multi-layer dielectric isolation layer in the overlapping area of the optical waveguide and the electrode, the electrode and the waveguide are vertically separated. The vertical separation reduces the light loss caused by metal absorption.
还需要说明的是，除非特别描述或必须依序发生的操作，上述操作的顺序并无限制于以上所列，且可根据所需设计而变化或重新安排。It should also be noted that unless specifically described or operations that must occur sequentially, the sequence of the above operations is not limited to the above list, and can be changed or rearranged according to the desired design.
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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| CN202310678899.1ACN116400522B (en) | 2023-06-09 | 2023-06-09 | Thin film lithium niobate modulator with electrode layered climbing and its preparation method |
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