CN116130355A - Process for manufacturing positive trapezoid glue shape by dry etching - Google Patents
Process for manufacturing positive trapezoid glue shape by dry etchingDownload PDFInfo
- Publication number
- CN116130355A CN116130355ACN202310056716.2ACN202310056716ACN116130355ACN 116130355 ACN116130355 ACN 116130355ACN 202310056716 ACN202310056716 ACN 202310056716ACN 116130355 ACN116130355 ACN 116130355A
- Authority
- CN
- China
- Prior art keywords
- dry etching
- glue
- trapezoid
- photoresist
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312dry etchingMethods0.000titleclaimsabstractdescription49
- 239000003292glueSubstances0.000titleclaimsabstractdescription49
- 238000000034methodMethods0.000titleclaimsabstractdescription26
- 238000004519manufacturing processMethods0.000titleclaimsabstractdescription16
- 229920002120photoresistant polymerPolymers0.000claimsabstractdescription31
- 239000000853adhesiveSubstances0.000claimsabstractdescription22
- 230000001070adhesive effectEffects0.000claimsabstractdescription22
- 239000000758substrateSubstances0.000claimsabstractdescription15
- 239000011248coating agentSubstances0.000claimsabstractdescription12
- 238000000576coating methodMethods0.000claimsabstractdescription12
- 238000011161developmentMethods0.000claimsabstractdescription5
- 238000004528spin coatingMethods0.000claimsdescription6
- 238000012545processingMethods0.000abstractdescription7
- 239000004065semiconductorSubstances0.000description5
- 238000010586diagramMethods0.000description2
- 238000000059patterningMethods0.000description2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-NSiliconChemical compound[Si]XUIMIQQOPSSXEZ-UHFFFAOYSA-N0.000description1
- 230000009286beneficial effectEffects0.000description1
- 238000003384imaging methodMethods0.000description1
- 238000012986modificationMethods0.000description1
- 230000004048modificationEffects0.000description1
- 229910052710siliconInorganic materials0.000description1
- 239000010703siliconSubstances0.000description1
Images
Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Technical Field
The invention relates to the field of a semiconductor dry etching process, in particular to a process for manufacturing a positive trapezoid glue shape by dry etching.
Background
At present, the semiconductor industry is rapidly developed, the market demand for semiconductor devices is also increasing, and the forms of semiconductors are also becoming diversified. Some of these components are semiconductor devices in which a non-photosensitive paste is applied to a silicon substrate. The method requires that the glue shape of the non-photosensitive glue is in a regular trapezoid shape and the inclined plane angle is required to be 45 degrees, the general yellow light technology cannot process the glue shape of the non-photosensitive glue, and the dry etching technology can be used singly for carrying out graphical processing, but the glue shape after dry etching is in a rectangle shape or the inclined plane angle is close to 90 degrees. In order to solve the problem, the invention discloses a method combining dry etching with yellow light technology, which can carry out non-photosensitive glue imaging processing and simultaneously can enable the glue shape of the glue to be in a positive trapezoid shape.
Disclosure of Invention
In order to solve the technical problems, the invention designs a process for manufacturing a regular trapezoid glue shape by dry etching, so that the finally formed glue shape is a regular trapezoid or an inverted trapezoid, and the inclined plane angle is smaller than or equal to 45 degrees.
The invention adopts the following technical scheme:
a process for manufacturing a positive trapezoid glue shape by dry etching comprises the following steps:
s1, taking out a substrate, and coating a layer of non-photosensitive primer on the substrate to reach a set target thickness;
s2, coating a layer of photoresist on the non-photosensitive bottom layer adhesive, wherein the thickness of the photoresist is larger than that of the non-photosensitive bottom layer adhesive;
s3, after the coating of the two layers of glue is finished, the photoresist on the upper layer is made into a glue shape with a positive trapezoid or inverted trapezoid notch in an exposure and development hardening mode, and the non-photosensitive bottom glue to be removed is exposed;
s4, dry etching is carried out on the photoresist on the upper layer and the exposed non-photosensitive bottom layer by adopting a dry etching process;
and S5, after dry etching, removing residual photoresist on the upper layer of the non-photosensitive bottom layer adhesive through photoresist removing, and finally obtaining a product in a regular trapezoid or inverted trapezoid adhesive shape, thereby completing the process of manufacturing the regular trapezoid adhesive shape through dry etching.
Preferably, in step S4, the dry etching parameters are adjusted to make the dry etching rate of the upper layer dry etching glue coincide with the dry etching rate of the non-photosensitive bottom layer glue.
Preferably, the inclined plane angle of the regular trapezoid or inverted trapezoid notch is less than or equal to 45 degrees.
Preferably, the non-photosensitive primer is uniformly coated on the substrate by spin coating.
Preferably, the photoresist is uniformly coated on the non-photosensitive bottom layer adhesive by a spin coating mode.
The beneficial effects of the invention are as follows: the invention combines dry etching and glue spreading exposure developing processes, so that the glue processing is more diversified, the application field of a dry etching machine is expanded, and the patterning processing of the glue with a positive trapezoid or an inverted trapezoid and an inclined plane angle smaller than or equal to 45 degrees is realized.
Drawings
FIG. 1 is a schematic view of a substrate according to the present invention;
FIG. 2 is a schematic view of a substrate coated with a non-photosensitive primer according to the present invention;
FIG. 3 is a schematic view of a structure of the non-photosensitive primer of FIG. 2 after being coated with a photoresist and exposed to light for development and hardening;
FIG. 4 is a schematic diagram of a structure of the photoresist of FIG. 3 after dry etching the upper layer with the exposed non-photosensitive underlayer;
FIG. 5 is a schematic diagram of a structure for removing the upper photoresist after the dry etching in FIG. 4;
in the figure: 1. 2 parts of a substrate, 2 parts of non-photosensitive bottom layer glue and 3 parts of photoresist.
Description of the embodiments
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
examples: a process for manufacturing a positive trapezoid glue shape by dry etching comprises the following steps:
s1, as shown in FIG. 1, taking out asubstrate 1, and coating a layer ofnon-photosensitive primer 2 on the substrate to reach a set target thickness, as shown in FIG. 2;
s2, coating a layer of photoresist 3 on the non-photosensitive bottom layer adhesive, wherein the thickness of the photoresist is larger than that of the non-photosensitive bottom layer adhesive;
s3, after the coating of the two layers of glue is finished, the photoresist on the upper layer is made into a glue shape with a positive trapezoid notch in an exposure and development hardening mode, and the non-photosensitive bottom glue to be removed is exposed, as shown in FIG. 3;
s4, dry etching is carried out on the photoresist on the upper layer and the exposed non-photosensitive bottom layer by adopting a dry etching process, as shown in FIG. 4;
s5, after dry etching, removing the residual photoresist on the upper layer of the non-photosensitive bottom layer adhesive through photoresist removal, and finally obtaining a product in a positive trapezoid adhesive shape, wherein the process for manufacturing the positive trapezoid adhesive shape through dry etching is finished as shown in FIG. 5.
In step S4, the dry etching parameters are adjusted to make the dry etching rate of the upper layer dry etching glue consistent with the dry etching rate of the non-photosensitive bottom layer glue.
The inclined plane angle of the regular trapezoid notch is less than or equal to 45 degrees. The non-photosensitive primer is uniformly coated on the substrate by a spin coating mode. The photoresist is uniformly coated on the non-photosensitive bottom layer adhesive in a spin coating mode.
The invention combines dry etching and glue spreading exposure developing processes, so that the glue processing is more diversified, the application field of a dry etching machine is expanded, and the patterning processing of the glue with a positive trapezoid or an inverted trapezoid and an inclined plane angle smaller than or equal to 45 degrees is realized.
The above-described embodiment is only a preferred embodiment of the present invention, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (5)
1. A process for manufacturing a positive trapezoid glue shape by dry etching is characterized by comprising the following steps:
s1, taking out a substrate, and coating a layer of non-photosensitive primer on the substrate to reach a set target thickness;
s2, coating a layer of photoresist on the non-photosensitive bottom layer adhesive, wherein the thickness of the photoresist is larger than that of the non-photosensitive bottom layer adhesive;
s3, after the coating of the two layers of glue is finished, the photoresist on the upper layer is made into a glue shape with a positive trapezoid or inverted trapezoid notch in an exposure and development hardening mode, and the non-photosensitive bottom glue to be removed is exposed;
s4, dry etching is carried out on the photoresist on the upper layer and the exposed non-photosensitive bottom layer by adopting a dry etching process;
and S5, after dry etching, removing residual photoresist on the upper layer of the non-photosensitive bottom layer adhesive through photoresist removing, and finally obtaining a product in a regular trapezoid or inverted trapezoid adhesive shape, thereby completing the process of manufacturing the regular trapezoid adhesive shape through dry etching.
2. The process for manufacturing a positive trapezoid glue according to claim 1, wherein in step S4, the dry etching parameters are adjusted to make the dry etching rate of the upper layer dry etching glue consistent with the dry etching rate of the non-photosensitive bottom layer glue.
3. The process for manufacturing the regular trapezoid glue shape by dry etching according to claim 1, wherein the inclined plane angle of the regular trapezoid or inverted trapezoid notch is less than or equal to 45 degrees.
4. The process for manufacturing the positive trapezoid glue by dry etching according to claim 1, wherein the non-photosensitive bottom glue is uniformly coated on the substrate by a spin coating mode.
5. The process for manufacturing the positive trapezoid glue by dry etching according to claim 1, wherein the photoresist is uniformly coated on the non-photosensitive bottom glue by a spin coating mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310056716.2ACN116130355A (en) | 2023-01-16 | 2023-01-16 | Process for manufacturing positive trapezoid glue shape by dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310056716.2ACN116130355A (en) | 2023-01-16 | 2023-01-16 | Process for manufacturing positive trapezoid glue shape by dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116130355Atrue CN116130355A (en) | 2023-05-16 |
Family
ID=86300590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310056716.2APendingCN116130355A (en) | 2023-01-16 | 2023-01-16 | Process for manufacturing positive trapezoid glue shape by dry etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116130355A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118983274A (en)* | 2024-10-17 | 2024-11-19 | 杭州合盛微电子有限公司 | Method for preparing contact hole of semiconductor device |
| CN119542127A (en)* | 2025-01-22 | 2025-02-28 | 杭州美迪凯光电科技股份有限公司 | A step structure surface graphic processing technology |
- 2023
- 2023-01-16CNCN202310056716.2Apatent/CN116130355A/enactivePending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118983274A (en)* | 2024-10-17 | 2024-11-19 | 杭州合盛微电子有限公司 | Method for preparing contact hole of semiconductor device |
| CN119542127A (en)* | 2025-01-22 | 2025-02-28 | 杭州美迪凯光电科技股份有限公司 | A step structure surface graphic processing technology |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116130355A (en) | Process for manufacturing positive trapezoid glue shape by dry etching | |
| US6383952B1 (en) | RELACS process to double the frequency or pitch of small feature formation | |
| WO2017011931A1 (en) | Method for depositing metal configuration using photoresist | |
| JP2021500981A5 (en) | ||
| CN104465337A (en) | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue | |
| CN210040131U (en) | Rewiring layer | |
| CN103576466A (en) | Photoetching method | |
| CN110379707B (en) | Metal patterned stripping structure and manufacturing method thereof | |
| JP4556757B2 (en) | Manufacturing method of semiconductor device | |
| CN114864385A (en) | Wafer processing method | |
| JP2003139920A (en) | Method of manufacturing microlens | |
| US10002848B1 (en) | Test method for a redistribution layer | |
| CN112259466A (en) | Preparation method of rewiring layer | |
| CN211858584U (en) | An integrated circuit wafer thinning process support structure | |
| TWI677028B (en) | Method for improving etch loading effect | |
| KR100840498B1 (en) | Pattern collapse prevention method of semiconductor device | |
| CN106683986A (en) | Method for improving wafer edge defects | |
| CN112259465A (en) | Rewiring layer and preparation method thereof | |
| CN105988311A (en) | Aligning pattern and manufacturing method thereof | |
| JPH08274452A (en) | Method for manufacturing metal-coated substrate using organic etch stop layer | |
| US20190279871A1 (en) | Method of enhancing generation efficiency of patterned optical coating | |
| TW200535991A (en) | Composite layer method for minimizing ped effect | |
| CN102163547B (en) | Method for depositing photoresist on microelectronic or photoelectronic chip | |
| CN106971976B (en) | Array substrate and preparation method thereof | |
| JP2005079441A5 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |