CN116072543A - A kind of RC-IGBT device and its manufacturing method - Google Patents
A kind of RC-IGBT device and its manufacturing methodDownload PDFInfo
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- 238000004519manufacturing processMethods0.000titleclaimsabstractdescription41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-NSiliconChemical compound[Si]XUIMIQQOPSSXEZ-UHFFFAOYSA-N0.000claimsabstractdescription37
- 150000002500ionsChemical class0.000claimsabstractdescription37
- 229910052710siliconInorganic materials0.000claimsabstractdescription37
- 239000010703siliconSubstances0.000claimsabstractdescription37
- 239000012535impuritySubstances0.000claimsabstractdescription35
- 239000004065semiconductorSubstances0.000claimsdescription21
- 239000000758substrateSubstances0.000claimsdescription19
- 238000000227grindingMethods0.000claimsdescription17
- 238000012545processingMethods0.000claimsdescription17
- 229910052751metalInorganic materials0.000claimsdescription6
- 239000002184metalSubstances0.000claimsdescription6
- 229910021420polycrystalline siliconInorganic materials0.000claimsdescription5
- 229920005591polysiliconPolymers0.000claimsdescription5
- 230000015572biosynthetic processEffects0.000claimsdescription2
- 230000000717retained effectEffects0.000claims1
- 238000000034methodMethods0.000abstractdescription26
- 230000008569processEffects0.000abstractdescription10
- 238000000206photolithographyMethods0.000abstractdescription8
- 238000010586diagramMethods0.000description15
- 229920002120photoresistant polymerPolymers0.000description4
- 239000000243solutionSubstances0.000description4
- -1phosphorus ionsChemical class0.000description3
- 239000007943implantSubstances0.000description2
- 238000002513implantationMethods0.000description2
- 238000002347injectionMethods0.000description2
- 239000007924injectionSubstances0.000description2
- 238000010329laser etchingMethods0.000description2
- 238000012986modificationMethods0.000description2
- 230000004048modificationEffects0.000description2
- 229910052785arsenicInorganic materials0.000description1
- 230000004888barrier functionEffects0.000description1
- 230000009286beneficial effectEffects0.000description1
- 229910052796boronInorganic materials0.000description1
- 239000011248coating agentSubstances0.000description1
- 238000000576coating methodMethods0.000description1
- 238000013461designMethods0.000description1
- 238000011161developmentMethods0.000description1
- 229910001449indium ionInorganic materials0.000description1
- 238000005468ion implantationMethods0.000description1
- 238000001883metal evaporationMethods0.000description1
- 238000001465metallisationMethods0.000description1
- 230000003647oxidationEffects0.000description1
- 238000007254oxidation reactionMethods0.000description1
- 229910052698phosphorusInorganic materials0.000description1
- 239000011574phosphorusSubstances0.000description1
- 238000006467substitution reactionMethods0.000description1
- 238000004381surface treatmentMethods0.000description1
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- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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- H10D12/441—Vertical IGBTs
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- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及半导体技术领域，尤其涉及一种RC-IGBT器件及其制作方法。The invention relates to the technical field of semiconductors, in particular to an RC-IGBT device and a manufacturing method thereof.
背景技术Background technique
RC-IGBT（Reverse Conducting Insulated Gate Bipolar Transistor，反向导通绝缘栅双极型晶体管）器件背面含有图形化交替分布的P型集电区和N型集电区。为了能在RC-IGBT器件的背面形成图形化交替分布的P型集电区与N型集电区，目前采用的主要方式包括对N型杂质进行整体注入，P型杂质进行图形化注入。The back of the RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor, Reverse Conducting Insulated Gate Bipolar Transistor) device contains alternately patterned P-type collector regions and N-type collector regions. In order to form alternately patterned P-type collector regions and N-type collector regions on the back of the RC-IGBT device, the main methods currently used include overall implantation of N-type impurities and patterned implantation of P-type impurities.
现有技术中，对RC-IGBT器件的背面加工方法包括如下步骤：1)、对完成正面加工的RC-IGBT晶圆的背面进行减薄；2)、背面N型杂质注入；3)、背面涂敷光刻胶；4)、使用背面P型注入光刻版对光刻胶进行曝光；5)、光刻胶显影形成P型掺杂的注入阻挡层；6)、背面P型杂质注入；7)、去除剩余光刻胶；8)、背面金属化。In the prior art, the method for processing the back side of an RC-IGBT device comprises the following steps: 1), thinning the back side of the RC-IGBT wafer that has been processed on the front side; 2), implanting N-type impurities on the back side; 3), Coating photoresist; 4), exposing the photoresist by using a P-type injection photolithography plate on the back; 5), developing the photoresist to form a P-type doped injection barrier layer; 6), injecting P-type impurities on the back; 7), removing the remaining photoresist; 8), back metallization.
现有技术中需要对RC-IGBT晶圆背面进行光刻加工工序，导致晶圆背面加工工序成本高、生产周期长，不利于RC-IGBT器件的进一步发展。In the prior art, it is necessary to perform a photolithography process on the back of the RC-IGBT wafer, resulting in high cost and long production cycle of the wafer back process, which is not conducive to the further development of RC-IGBT devices.
发明内容Contents of the invention
本发明提供了一种RC-IGBT器件及其制作方法，无需背面光刻工艺，制作方法简单，可以降低RC-IGBT器件的制作成本。The invention provides an RC-IGBT device and a manufacturing method thereof, which does not require a backside photolithography process, has a simple manufacturing method, and can reduce the manufacturing cost of the RC-IGBT device.
根据本发明的一方面，提供了一种RC-IGBT器件的制作方法，该制作方法包括如下步骤：According to one aspect of the present invention, a kind of manufacturing method of RC-IGBT device is provided, and this manufacturing method comprises the steps:
形成具备正面元胞结构的RC-IGBT硅基；Form RC-IGBT silicon base with front cell structure;
向所述RC-IGBT硅基的背面注入第一类型杂质离子依次形成第一类型缓冲区和第一类型集电区；Implanting first type impurity ions to the back of the RC-IGBT silicon base to form a first type buffer area and a first type collector region in sequence;
对所述第一类型集电区远离所述第一类型缓冲区的表面进行处理形成多个凹槽，其中，所述凹槽的深度大于设定深度；processing the surface of the first-type collector region away from the first-type buffer zone to form a plurality of grooves, wherein the depth of the grooves is greater than a set depth;
向处理后的第一类型集电区远离所述第一类型缓冲区的表面注入第二类型杂质离子，形成第二类型集电区，其中，所述第二类型集电区的厚度小于或等于设定深度，所述凹槽底部的第二类型集电区与所述第一类型缓冲区接触；implanting second-type impurity ions into the surface of the treated first-type collector region away from the first-type buffer zone to form a second-type collector region, wherein the thickness of the second-type collector region is less than or equal to a set depth, the second type collector area at the bottom of the groove is in contact with the first type buffer zone;
去除部分第二类型集电区以裸露部分第一类型集电区，同时保留所述凹槽内的第二类型集电区。Part of the second-type collector region is removed to expose part of the first-type collector region, while retaining the second-type collector region in the groove.
可选的，所述对所述第一类型集电区远离所述第一类型缓冲区的表面进行处理形成多个凹槽具体包括：Optionally, the processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves specifically includes:
采用砂轮对所述第一类型集电区远离所述第一类型缓冲区的表面进行研磨或刻蚀，以形成所述多个凹槽。A grinding wheel is used to grind or etch the surface of the first type collector region away from the first type buffer zone to form the plurality of grooves.
可选的，所述对所述第一类型集电区远离所述第一类型缓冲区的表面进行处理形成多个凹槽具体包括：Optionally, the processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves specifically includes:
采用激光对所述第一类型集电区远离所述第一类型缓冲区的表面进行刻蚀，以形成所述多个凹槽。Laser is used to etch the surface of the first type collector region away from the first type buffer zone to form the plurality of grooves.
可选的，所述去除部分第二类型集电区以裸露部分第一类型集电区，同时保留所述凹槽内的第二类型集电区具体包括：采用砂轮对相邻两个所述凹槽之间的第二类型集电区和部分第一类型集电区进行研磨，以裸露部分第一类型集电区且保留所述凹槽内的第二类型集电区。Optionally, the removing part of the second-type collector region to expose part of the first-type collector region while retaining the second-type collector region in the groove specifically includes: using a grinding wheel to pair two adjacent The second-type collector region and part of the first-type collector region between the grooves are ground to expose part of the first-type collector region and retain the second-type collector region in the groove.
可选的，所述对所述第一类型集电区远离所述第一类型缓冲区的表面进行处理形成多个凹槽具体包括：Optionally, the processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves specifically includes:
对所述第一类型集电区远离所述第一类型缓冲区的表面进行处理，使所述第一类型集电区远离所述第一类型缓冲区的表面为锯齿状。The surface of the first type collector region away from the first type buffer zone is processed so that the surface of the first type collector region away from the first type buffer zone is serrated.
可选的，所述向所述RC-IGBT硅基的背面注入第一类型杂质离子依次形成第一类型缓冲区和第一类型集电区具体包括：Optionally, the implanting the first type impurity ions to the backside of the RC-IGBT silicon base to sequentially form the first type buffer area and the first type collector region specifically includes:
向所述RC-IGBT硅基的背面注入第一浓度的第一类型杂质离子形成第一设定厚度的第一类型缓冲区；Implanting first-type impurity ions of a first concentration into the back of the RC-IGBT silicon base to form a first-type buffer zone with a first set thickness;
向所述第一类型缓冲区的背面注入第二浓度的第一类型杂质离子形成第二设定厚度的第一类型集电区；其中，所述第二浓度大于所述第一浓度，所述第一设定厚度大于所述第二设定厚度。Implanting first type impurity ions of a second concentration into the back of the first type buffer zone to form a second set thickness of the first type collector region; wherein the second concentration is greater than the first concentration, the The first set thickness is greater than the second set thickness.
可选的，所述设定深度大于或等于0.01μm。Optionally, the set depth is greater than or equal to 0.01 μm.
可选的，所述去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区之后，还包括：Optionally, after removing part of the second-type collector region to expose part of the first-type collector region while retaining the second-type collector region in the groove, the method further includes:
在第一类型集电区和第二类型集电区远离所述第一类型缓冲区的表面形成集电极金属。A collector metal is formed on surfaces of the first type collector region and the second type collector region away from the first type buffer zone.
可选的，所述形成具备正面元胞结构的RC-IGBT硅基具体包括：Optionally, the formation of the RC-IGBT silicon base with a front cell structure specifically includes:
提供一第一类型半导体衬底；providing a first type semiconductor substrate;
在所述第一类型半导体衬底的正面形成多个沟槽；forming a plurality of trenches on the front surface of the first type semiconductor substrate;
在所述沟槽侧壁和底部形成栅氧化层；forming a gate oxide layer on the sidewall and bottom of the trench;
在形成栅氧化层的沟槽内形成栅极多晶硅；forming gate polysilicon in the trench forming the gate oxide;
在相邻两个所述沟槽之间的所述第一类型半导体衬底的正面依次注入第二类型离子和第一类型离子以形成第二类型基区和第一类型发射区；Implanting second-type ions and first-type ions in sequence on the front surface of the first-type semiconductor substrate between two adjacent trenches to form a second-type base region and a first-type emitter region;
在所述栅氧化层远离第一类型半导体衬底的一侧形成绝缘层；forming an insulating layer on a side of the gate oxide layer away from the first type semiconductor substrate;
制作发射极，其中，所述发射极覆盖所述绝缘层且与所述第二类型基区和所述第一类型发射区接触；forming an emitter, wherein the emitter covers the insulating layer and is in contact with the second type base region and the first type emitter region;
将第一类型半导体衬底的背面减薄至所需厚度，形成所述具备正面元胞结构的RC-IGBT硅基。The back side of the first type semiconductor substrate is thinned to the required thickness to form the RC-IGBT silicon base with the front cell structure.
根据本发明的另一方面，提供了一种RC-IGBT器件，该RC-IGBT器件包括：具备正面元胞结构的RC-IGBT硅基、位于所述RC-IGBT硅基的背面的第一类型缓冲区、第一类型集电区和第二类型集电区；According to another aspect of the present invention, an RC-IGBT device is provided, the RC-IGBT device includes: an RC-IGBT silicon base with a front cell structure, a first type of silicon base located on the back side of the RC-IGBT silicon base a buffer zone, a first type collector area and a second type collector area;
所述第一类型集电区和所述第二类型集电区均位于所述第一类型缓冲区远离所述RC-IGBT硅基的背面的表面；Both the first type collector region and the second type collector region are located on the surface of the first type buffer zone away from the back surface of the RC-IGBT silicon base;
所述第一类型集电区远离所述第一类型缓冲区的表面与所述第二类型集电区远离所述第一类型缓冲区的表面不完全齐平。A surface of the first-type collector region away from the first-type buffer zone is not completely flush with a surface of the second-type collector region away from the first-type buffer zone.
本实施例提供了一种RC-IGBT器件的制作方法，该制作方法包括：在具备正面元胞结构的RC-IGBT硅基的背面注入第一类型杂质离子形成第一类型缓冲区和第一类型集电区，接着对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽。然后向处理后的第一类型集电区中注入第二类型杂质离子形成第二类型集电区，其中，凹槽底部的第二类型集电区与第一类型缓冲区接触，第二类型集电区将第一类型集电区分为多个间隔分布的第一类型集电子区，第二类型集电区全覆盖第一类型集电区。接着去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区，以制成RC-IGBT器件。去除部分第二类型集电区后的第二类型集电区包括多个间隔分布的第二类型集电子区，且去除部分第二类型集电区后第一类型集电子区和第二类型集电子区交替分布。本实施例通过去除两个凹槽之间的第二类型集电区形成交替分布的第一类型集电子区和第二类型集电子区，无需在形成第一类型集电区后，采用光刻加工工序形成第二类型集电区。综上，本实施例提供的RC-IGBT器件的制作方法，无需背面光刻工艺，制作方法简单，可以降低RC-IGBT器件的制作成本。This embodiment provides a method for manufacturing an RC-IGBT device, the method comprising: implanting first type impurity ions on the back side of the RC-IGBT silicon base with a front cell structure to form a first type buffer zone and a first type The collector region, and then processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves. Then implant second type impurity ions into the processed first type collector region to form a second type collector region, wherein the second type collector region at the bottom of the groove is in contact with the first type buffer zone, and the second type collector region The electrical region divides the first-type collector region into a plurality of first-type collector regions distributed at intervals, and the second-type collector region completely covers the first-type collector region. Then remove part of the second type collector region to expose part of the first type collector region, while retaining the second type collector region in the groove, so as to produce an RC-IGBT device. The second-type collector region after removing part of the second-type collector region includes a plurality of second-type collector regions distributed at intervals, and after removing part of the second-type collector region, the first-type collector region and the second-type collector region The electronic regions are distributed alternately. In this embodiment, alternately distributed first-type collector regions and second-type collector regions are formed by removing the second-type collector regions between the two grooves, without using photolithography after forming the first-type collector regions. The processing steps form the second type of collector region. To sum up, the manufacturing method of the RC-IGBT device provided in this embodiment does not require a backside photolithography process, the manufacturing method is simple, and the manufacturing cost of the RC-IGBT device can be reduced.
应当理解，本部分所描述的内容并非旨在标识本发明的实施例的关键或重要特征，也不用于限制本发明的范围。本发明的其它特征将通过以下的说明书而变得容易理解。It should be understood that the content described in this section is not intended to identify key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will be easily understood from the following description.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without creative effort.
图1是根据本发明实施例提供的一种RC-IGBT器件的制作方法的流程示意图；Fig. 1 is a schematic flow chart of a manufacturing method of an RC-IGBT device provided according to an embodiment of the present invention;
图2是根据本发明实施例提供的一种具备正面元胞结构的RC-IGBT硅基的结构示意图；2 is a schematic structural view of an RC-IGBT silicon base with a front cell structure provided according to an embodiment of the present invention;
图3-图5为本发明制作RC-IGBT器件的过程结构示意图；Fig. 3-Fig. 5 is the process structural representation of making RC-IGBT device of the present invention;
图6是采用本发明实施例提供的RC-IGBT器件的制作方法形成的一种RC-IGBT器件的结构示意图；FIG. 6 is a schematic structural diagram of an RC-IGBT device formed by the method for manufacturing an RC-IGBT device provided by an embodiment of the present invention;
图7为形成第一类型缓冲区的结构示意图；Fig. 7 is the structural representation of forming the first type buffer zone;
图8是采用本发明实施例提供的RC-IGBT器件的制作方法形成的又一种RC-IGBT器件的结构示意图；FIG. 8 is a schematic structural diagram of another RC-IGBT device formed by using the method for manufacturing an RC-IGBT device provided by an embodiment of the present invention;
图9-图14为本发明形成具备正面元胞结构的RC-IGBT硅基的过程结构示意图。9 to 14 are schematic structural diagrams of the process of forming an RC-IGBT silicon base with a front cell structure according to the present invention.
具体实施方式Detailed ways
为了使本技术领域的人员更好地理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分的实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.
需要说明的是，本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having", as well as any variations thereof, are intended to cover a non-exclusive inclusion, for example, a process, method, system, product or device comprising a sequence of steps or elements is not necessarily limited to the expressly listed instead, may include other steps or elements not explicitly listed or inherent to the process, method, product or apparatus.
图1是根据本发明实施例提供的一种RC-IGBT器件的制作方法的流程示意图，参考图1，本实施例提供的RC-IGBT器件的制作方法包括如下步骤：Fig. 1 is a schematic flow chart of a method for manufacturing an RC-IGBT device according to an embodiment of the present invention. Referring to Fig. 1, the method for manufacturing an RC-IGBT device provided in this embodiment includes the following steps:
S110、形成具备正面元胞结构的RC-IGBT硅基。S110 , forming an RC-IGBT silicon base with a front cell structure.
具体的，图2是根据本发明实施例提供的一种具备正面元胞结构的RC-IGBT硅基的结构示意图，参考图2，本实施例提供的具备正面元胞结构的RC-IGBT硅基100包括第一类型半导体衬底111、栅氧化层112、栅极多晶硅113、第二类型基区114、第一类型发射区115、绝缘层116以及发射极117。第一类型可以为N型或P型，第二类型可以为N型或P型。当第一类型为N型时，第二类型为P型，当第一类型为P型时，第二类型为N型。Specifically, Fig. 2 is a schematic structural diagram of an RC-IGBT silicon base with a front cell structure provided according to an embodiment of the present invention. Referring to Fig. 2, the RC-IGBT silicon base with a front cell structure provided in this
S120、向RC-IGBT硅基的背面注入第一类型杂质离子依次形成第一类型缓冲区和第一类型集电区。S120 , implanting first type impurity ions into the back surface of the RC-IGBT silicon base to sequentially form a first type buffer area and a first type collector region.
具体的，参考图3，第一类型缓冲区120相对于第一类型集电区130更靠近RC-IGBT硅基的正面，RC-IGBT硅基的背面与其正面相对设置。第一类型缓冲区120中的第一类型杂质离子的浓度小于第一类型集电区130中的第一类型杂质离子的浓度。第一类型杂质离子可以是N型离子，具体可以是磷离子或砷离子。Specifically, referring to FIG. 3 , the first
S130、对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽，其中，凹槽的深度大于设定深度。S130, processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves, wherein the depth of the grooves is greater than a set depth.
具体的，参考图4，图4为对第一类型集电区130远离第一类型缓冲区120的表面处理后形成的多个凹槽131的结构示意图。形成多个凹槽131的具体方式可以是：对第一类型集电区130的表面进行雕刻、研磨或者激光刻蚀等方法形成多个凹槽131。凹槽131的深度为第一类型集电区130远离第一类型缓冲区120的表面中最高点与其相邻的最低点之间的垂直距离。任意凹槽131的深度均大于设定深度。多个凹槽131中各凹槽131的深度可以相同，也可以不同，多个凹槽131中各凹槽131的形状可以相同，也可以不同。Specifically, referring to FIG. 4 , FIG. 4 is a schematic structural diagram of a plurality of
需要说明的是，图4示例性的画出第一类型集电区130远离第一类型缓冲区120的表面为锯齿状，两个锯齿之间包括一个凹槽131，但并非对本实施例的限定，本实施例中凹槽131的横截面可以为梯形或矩形等。It should be noted that, FIG. 4 exemplarily shows that the surface of the first-
S140、向处理后的第一类型集电区远离第一类型缓冲区的表面注入第二类型杂质离子，形成第二类型集电区，其中，第二类型集电区的厚度小于或等于设定深度，凹槽底部的第二类型集电区与第一类型缓冲区接触。S140. Implanting second-type impurity ions into the surface of the processed first-type collector region away from the first-type buffer zone to form a second-type collector region, wherein the thickness of the second-type collector region is less than or equal to a set value Depth, the second type collector region at the bottom of the groove is in contact with the first type buffer zone.
具体的，参考图5，图5为形成第二类型集电区140的结构示意图。设置第二类型集电区140的厚度小于或等于设定深度，可以在第二类型杂质离子注入第一类型集电区130后保留部分第一类型集电区130，避免第二类型杂质离子注入至第一类型集电区130的所有区域。注入第二类型杂质离子后形成的第二类型集电区140可以全覆盖第一类型集电区130，且将第一类型集电区130分割为多个间隔分布的第一类型集电子区（图5中间隔分布的三角形区域为第一类型集电子区）。第二类型集电区140的厚度等于或大于凹槽131的表面的最低点至第一类型缓冲区120靠近第二类型集电区140的表面的垂直距离，这样设置可以使凹槽131底部的第二类型集电区140与第一类型缓冲区120接触。第二类型杂质离子可以是P型离子，具体可以是硼离子或铟离子。Specifically, refer to FIG. 5 , which is a schematic structural diagram of forming the second
S150、去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区。S150, removing part of the second-type collector region to expose part of the first-type collector region, while retaining the second-type collector region in the groove.
具体的，参考图6，图6为去除部分第二类型集电区140后裸露部分第一类型集电区130的结构示意图。去除部分第二类型集电区140具体可以是：参考图6，去除相邻两个凹槽131之间的第二类型集电区140和部分第一类型集电区130，以使相邻两个凹槽131之间的第一类型集电区130裸露。Specifically, referring to FIG. 6 , FIG. 6 is a schematic structural diagram of the exposed part of the first
参考图6，去除部分第二类型集电区140后，第二类型集电区140远离第一类型缓冲区120的表面可以与第一类型集电区130远离第一类型缓冲区120的表面不完全齐平，图6中的第二类型集电区140远离第一类型缓冲区120的表面依然包括多个凹槽131。去除部分第二类型集电区140后，剩余的第二类型集电区140被分成多个间隔分布的第二类型集电子区（图6中相邻两个第一类型集电子区之间包括一个第二类型集电子区）。Referring to FIG. 6, after removing part of the second
保留凹槽131内的第二类型集电区140具体可以是保留凹槽131内的部分第二类型集电区140，以使每一凹槽131内依然存在第二类型集电子区与第一类型缓冲区120接触。Retaining the second
本实施例形成的RC-IGBT器件中，第一类型集电子区与第二类型集电子区交替分布，每一第二类型集电子区与第一类型缓冲区120接触。In the RC-IGBT device formed in this embodiment, the first-type collector regions and the second-type collector regions are alternately distributed, and each second-type collector region is in contact with the first-
本实施例提供了一种RC-IGBT器件的制作方法，该制作方法包括：在具备正面元胞结构的RC-IGBT硅基的背面注入第一类型杂质离子形成第一类型缓冲区和第一类型集电区，接着对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽。然后向处理后的第一类型集电区中注入第二类型杂质离子形成第二类型集电区，其中，凹槽底部的第二类型集电区与第一类型缓冲区接触，第二类型集电区将第一类型集电区分为多个间隔分布的第一类型集电子区，第二类型集电区全覆盖第一类型集电区。接着去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区，以制成RC-IGBT器件。去除部分第二类型集电区后的第二类型集电区包括多个间隔分布的第二类型集电子区，且去除部分第二类型集电区后第一类型集电子区和第二类型集电子区交替分布。本实施例通过去除两个凹槽之间的第二类型集电区形成交替分布的第一类型集电子区和第二类型集电子区，无需在形成第一类型集电区后，采用光刻加工工序形成第二类型集电区。综上，本实施例提供的RC-IGBT器件的制作方法，无需背面光刻工艺，制作方法简单，可以降低RC-IGBT器件的制作成本。This embodiment provides a method for manufacturing an RC-IGBT device, the method comprising: implanting first type impurity ions on the back side of the RC-IGBT silicon base with a front cell structure to form a first type buffer zone and a first type The collector region, and then processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves. Then implant second type impurity ions into the processed first type collector region to form a second type collector region, wherein the second type collector region at the bottom of the groove is in contact with the first type buffer zone, and the second type collector region The electrical region divides the first-type collector region into a plurality of first-type collector regions distributed at intervals, and the second-type collector region completely covers the first-type collector region. Then remove part of the second type collector region to expose part of the first type collector region, while retaining the second type collector region in the groove, so as to produce an RC-IGBT device. The second-type collector region after removing part of the second-type collector region includes a plurality of second-type collector regions distributed at intervals, and after removing part of the second-type collector region, the first-type collector region and the second-type collector region The electronic regions are distributed alternately. In this embodiment, alternately distributed first-type collector regions and second-type collector regions are formed by removing the second-type collector regions between the two grooves, without using photolithography after forming the first-type collector regions. The processing steps form the second type of collector region. To sum up, the manufacturing method of the RC-IGBT device provided in this embodiment does not require a backside photolithography process, the manufacturing method is simple, and the manufacturing cost of the RC-IGBT device can be reduced.
在上述实施例的基础上，可选的，对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽具体包括：采用砂轮对第一类型集电区远离第一类型缓冲区的表面进行研磨，以形成多个凹槽。On the basis of the above-mentioned embodiments, optionally, processing the surface of the first type collector region far away from the first type buffer zone to form a plurality of grooves specifically includes: using a grinding wheel to treat the first type collector region away from the first type The surface of the buffer is ground to form a plurality of grooves.
具体的，本实施例中的砂轮可以为粗砂轮，采用粗砂轮对第一类型集电区的表面进行研磨具有方便、快捷且成本低等特点。Specifically, the grinding wheel in this embodiment may be a coarse grinding wheel, and using the coarse grinding wheel to grind the surface of the first type of collector region is convenient, fast and low in cost.
可选的，对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽具体包括：采用激光对第一类型集电区远离第一类型缓冲区的表面进行刻蚀，以形成多个凹槽。Optionally, processing the surface of the first type collector region away from the first type buffer zone to form a plurality of grooves specifically includes: using a laser to etch the surface of the first type collector region away from the first type buffer zone, to form multiple grooves.
具体的，采用激光对第一类型集电区的表面进行刻蚀也具有方便、快捷且成本低等特点，此外，激光刻蚀可以较大程度上刻蚀出所需尺寸的凹槽，具有刻蚀精度高的特点。Specifically, the use of laser to etch the surface of the first type of collector region also has the characteristics of convenience, speed, and low cost. In addition, laser etching can etch grooves of required size to a large extent, and has the advantages of engraving The characteristics of high eclipse precision.
可选的，去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区具体包括：采用砂轮对相邻两个凹槽之间的第二类型集电区和部分第一类型集电区进行研磨，以裸露部分第一类型集电区且保留凹槽内的第二类型集电区。Optionally, removing part of the second-type collector region to expose part of the first-type collector region while retaining the second-type collector region in the groove specifically includes: using a grinding wheel to pair the first-type collector region between two adjacent grooves. The second-type collector region and part of the first-type collector region are ground to expose part of the first-type collector region and retain the second-type collector region in the groove.
具体的，本实施例中的砂轮可以为细砂轮，细砂轮具有研磨精度高、研磨厚度可控等的特点。采用细砂轮研磨相邻两个凹槽之间的第二类型集电区和部分第一类型集电区，即为采用细砂轮研磨凸起的第二类型集电区和部分第一类型集电区。第一类型集电区中被研磨后的区域的表面和第二类型集电区中被研磨后的区域的表面位于同一平面（具体可参考图6）。Specifically, the grinding wheel in this embodiment may be a fine grinding wheel, which has the characteristics of high grinding precision and controllable grinding thickness. Use a fine grinding wheel to grind the second type of collector area and part of the first type of collector area between two adjacent grooves, that is, use a fine grinding wheel to grind the raised second type of collector area and part of the first type of collector district. The surface of the polished region in the first type collector region and the surface of the polished region in the second type collector region are located on the same plane (for details, refer to FIG. 6 ).
可选的，对第一类型集电区远离第一类型缓冲区的表面进行处理形成多个凹槽具体包括：对第一类型集电区远离第一类型缓冲区的表面进行处理，使第一类型集电区远离第一类型缓冲区的表面为锯齿状。Optionally, processing the surface of the first-type collector region away from the first-type buffer zone to form a plurality of grooves specifically includes: treating the surface of the first-type collector region away from the first-type buffer zone, so that the first The surface of the type collector region away from the first type buffer zone is jagged.
具体的，锯齿状的第一类型集电区的表面便于形成，设置第一类型集电区远离第一类型缓冲区的表面为锯齿状可以提高RC-IGBT器件的制作效率。Specifically, the serrated surface of the first-type collector region is easy to form, and setting the surface of the first-type collector region away from the first-type buffer zone to be serrated can improve the manufacturing efficiency of the RC-IGBT device.
可选的，向RC-IGBT硅基的背面注入第一类型杂质离子依次形成第一类型缓冲区和第一类型集电区具体包括：向RC-IGBT硅基的背面注入第一浓度的第一类型杂质离子形成第一设定厚度的第一类型缓冲区；向第一类型缓冲区的背面注入第二浓度的第一类型杂质离子形成第二设定厚度的第一类型集电区；其中，第二浓度大于第一浓度，第一设定厚度大于第二设定厚度。Optionally, implanting the first type impurity ions to the back of the RC-IGBT silicon base to sequentially form the first type buffer zone and the first type collector region specifically includes: implanting the first concentration of the first impurity ions into the back of the RC-IGBT silicon base Type impurity ions form a first-type buffer zone with a first set thickness; implanting a second concentration of first-type impurity ions to the back of the first-type buffer zone forms a first-type collector region with a second set thickness; wherein, The second concentration is greater than the first concentration, and the first set thickness is greater than the second set thickness.
具体的，图7为形成第一类型缓冲区120的结构示意图，图3为向第一类型缓冲区120的背面注入第二浓度的第一类型杂质离子形成第二设定厚度的第一类型集电区130的结构示意图。设置第一设定厚度大于第二设定厚度，可以在第二浓度的第一类型杂质离子注入第一类型缓冲区120后保留部分厚度的第一类型缓冲区120，避免第二浓度的第一类型杂质离子注入到第一类型缓冲区120的所有区域。Specifically, FIG. 7 is a schematic diagram of the structure of the first type of
可选的，设定深度大于或等于0.01μm。Optionally, the set depth is greater than or equal to 0.01 μm.
具体的，当设定深度大于或等于0.01μm，第二类型集电区的厚度可以等于或大于0.01μm。进一步的，第二类型集电区的厚度范围可以为0.01μm~1μm。当第二类型集电区的厚度范围为0.01μm~1μm时，RC-IGBT器件的工作性能将有所提升。Specifically, when the set depth is greater than or equal to 0.01 μm, the thickness of the second type collector region may be equal to or greater than 0.01 μm. Further, the thickness of the second type collector region may range from 0.01 μm to 1 μm. When the thickness of the second type collector region is in the range of 0.01 μm to 1 μm, the working performance of the RC-IGBT device will be improved.
可选的，第二设定厚度的范围为1μm~2μm。Optionally, the second set thickness ranges from 1 μm to 2 μm.
具体的，若第二设定厚度小于1μm，则会因第一类型集电区的厚度较薄而不便于研磨，且也会因第一类型集电区的厚度较薄而使形成的第二类型集电区的厚度范围较小。若第二设定厚度大于2μm，则会因第一类型集电区的厚度较厚而需去除较多的第一类型集电区，降低制作效率。本实施例设置第二设定厚度的范围为1μm~2μm，可以便于对第一类型集电区的表面进行处理，提高RC-IGBT器件的制作效率。Specifically, if the second set thickness is less than 1 μm, it will be inconvenient to grind due to the thinner thickness of the first type collector region, and the formed second collector region will be thinner because of the thinner thickness of the first type collector region Type collectors have a smaller range of thickness. If the second predetermined thickness is greater than 2 μm, more first-type collector regions need to be removed due to the thicker thickness of the first-type collector regions, reducing manufacturing efficiency. In this embodiment, the range of the second set thickness is set to be 1 μm to 2 μm, which can facilitate the treatment of the surface of the first type collector region and improve the manufacturing efficiency of the RC-IGBT device.
可选的，去除部分第二类型集电区以裸露部分第一类型集电区，同时保留凹槽内的第二类型集电区之后，还包括：在第一类型集电区和第二类型集电区远离第一类型缓冲区的表面形成集电极金属。Optionally, after removing part of the second type collector region to expose part of the first type collector region, while retaining the second type collector region in the groove, it also includes: the first type collector region and the second type collector region The surface of the collector region away from the buffer zone of the first type forms the collector metal.
具体的，图8是采用本发明实施例提供的RC-IGBT器件的制作方法形成的一种RC-IGBT器件的结构示意图，参考图8，集电极金属150位于第一类型集电区130和第二类型集电区140远离第一类型缓冲区120的表面。集电极金属150与第一类型集电区130中的每一第一类型集电子区，以及第二类型集电区140中的每一第二类型集电子区均接触。集电极金属150可以采用金属蒸发的方法制备。Specifically, FIG. 8 is a schematic structural view of an RC-IGBT device formed by using the manufacturing method of the RC-IGBT device provided by the embodiment of the present invention. Referring to FIG. 8, the
可选的，形成具备正面元胞结构的RC-IGBT硅基具体包括如下步骤：Optionally, forming the RC-IGBT silicon base with the front cell structure specifically includes the following steps:
S10、提供一第一类型半导体衬底。S10, providing a first type semiconductor substrate.
S20、在第一类型半导体衬底的正面形成多个沟槽。S20, forming a plurality of trenches on the front surface of the first type semiconductor substrate.
具体的，参考图9，图9为在第一类型半导体衬底111的正面形成多个沟槽10的结构示意图。Specifically, referring to FIG. 9 , FIG. 9 is a schematic structural diagram of forming a plurality of
S30、在沟槽侧壁和底部形成栅氧化层。S30 , forming a gate oxide layer on the sidewall and bottom of the trench.
具体的，参考图10，图10为形成栅氧化层112的结构示意图。可以采用热氧化法形成栅氧化层112。栅氧化层112也可以覆盖第一类型半导体衬底111的正面。Specifically, referring to FIG. 10 , FIG. 10 is a schematic structural diagram of forming the
S40、在形成栅氧化层的沟槽内形成栅极多晶硅。S40 , forming gate polysilicon in the trench for forming the gate oxide layer.
具体的，参考图11，图11为形成栅极多晶硅113的结构示意图。Specifically, referring to FIG. 11 , FIG. 11 is a schematic structural diagram of forming
S50、在相邻两个沟槽之间的第一类型半导体衬底的正面依次注入第二类型离子和第一类型离子以形成第二类型基区和第一类型发射区。S50 , sequentially implanting second-type ions and first-type ions on the front surface of the first-type semiconductor substrate between two adjacent trenches to form a second-type base region and a first-type emitter region.
具体的，参考图12，图12为形成第二类型基区114和第一类型发射区115的结构示意图。Specifically, referring to FIG. 12 , FIG. 12 is a schematic structural diagram of forming the second-
S60、在栅氧化层远离第一类型半导体衬底的一侧形成绝缘层。S60, forming an insulating layer on a side of the gate oxide layer away from the first type semiconductor substrate.
具体的，参考图13，图13为形成绝缘层116的结构示意图。Specifically, refer to FIG. 13 , which is a schematic structural diagram of forming the insulating
S70、制作发射极，其中，发射极覆盖绝缘层且与第二类型基区和第一类型发射区接触。S70 , making an emitter, wherein the emitter covers the insulating layer and is in contact with the second type base region and the first type emitter region.
具体的，参考图14，图14为形成发射极117的结构示意图，Specifically, referring to FIG. 14, FIG. 14 is a schematic structural diagram of forming the
S80、将第一类型半导体衬底的背面减薄至所需厚度，形成具备正面元胞结构的RC-IGBT硅基。S80, thinning the back side of the first type semiconductor substrate to a required thickness to form an RC-IGBT silicon base with a front side cell structure.
具体的，参考图2，相比于图14，图2的第一类型半导体111较薄，可以采用机械研磨的方法对图14中的第一类型半导体衬底111的背面进行减薄。Specifically, referring to FIG. 2 , compared with FIG. 14 , the
本实施例提供了一种RC-IGBT器件，参考图6，该RC-IGBT器件包括：具备正面元胞结构的RC-IGBT硅基、位于RC-IGBT硅基的背面的第一类型缓冲区120、第一类型集电区130和第二类型集电区140；第一类型集电区130和第二类型集电区140均位于第一类型缓冲区120远离RC-IGBT硅基的背面的表面；第一类型集电区130远离第一类型缓冲区120的表面与第二类型集电区140远离第一类型缓冲区120的表面不完全齐平。This embodiment provides an RC-IGBT device. Referring to FIG. 6, the RC-IGBT device includes: an RC-IGBT silicon base with a front cell structure, and a first
本实施例提供的RC-IGBT器件与本发明任意实施例提供的RC-IGBT器件的制作方法具有相应的有益效果，未在本实施例详尽的技术细节，详见本发明任意实施例提供的RC-IGBT器件的制作方法。The RC-IGBT device provided in this embodiment and the manufacturing method of the RC-IGBT device provided in any embodiment of the present invention have corresponding beneficial effects. For detailed technical details in this embodiment, please refer to the RC-IGBT device provided in any embodiment of the present invention. - Manufacturing method of IGBT device.
应该理解，可以使用上面所示的各种形式的流程，重新排序、增加或删除步骤。例如，本发明中记载的各步骤可以并行地执行也可以顺序地执行也可以不同的次序执行，只要能够实现本发明的技术方案所期望的结果，本文在此不进行限制。It should be understood that steps may be reordered, added or deleted using the various forms of flow shown above. For example, each step described in the present invention may be executed in parallel, sequentially, or in a different order, as long as the desired result of the technical solution of the present invention can be achieved, there is no limitation herein.
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，根据设计要求和其他因素，可以进行各种修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。The above specific implementation methods do not constitute a limitation to the protection scope of the present invention. It should be apparent to those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made depending on design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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