CN115967359A - Temperature compensation circuit of radio frequency amplifier and grid voltage adjustment method of radio frequency amplifier - Google Patents
Temperature compensation circuit of radio frequency amplifier and grid voltage adjustment method of radio frequency amplifierDownload PDFInfo
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- CN115967359A CN115967359ACN202310078861.0ACN202310078861ACN115967359ACN 115967359 ACN115967359 ACN 115967359ACN 202310078861 ACN202310078861 ACN 202310078861ACN 115967359 ACN115967359 ACN 115967359A
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Abstract
Description
Technical Field
The invention relates to the field of radio frequency amplifiers, in particular to a temperature compensation circuit of a radio frequency amplifier and a grid voltage adjusting method of the radio frequency amplifier.
Background
Ideally, the amplifier should operate stably so that the link signal can be amplified stably. However, in practical use, the problem that the gain of the amplifier changes along with the temperature is caused because the performance of the mos tube is influenced by the temperature, and the gain of the amplifier using mos tubes with different sizes is influenced by the temperature in different sizes. The research on how to compensate the gain of amplifiers using mos tubes of different sizes at different temperatures and to reduce the complexity of the temperature compensation circuit as much as possible is becoming a hot spot.
Conventional temperature compensation methods can be divided into two broad categories. One is a digital temperature compensation method, which generally detects the current working temperature of the transistor through a temperature sensor, then sends the converted digital signal to a control unit, and the control unit looks up the corresponding compensation data in a temperature compensation data table according to the working temperature and converts the compensation quantity into an analog voltage signal as a bias voltage to be input to a radio frequency amplifier. The digital temperature compensation method has the characteristics of high precision and strong anti-interference performance, but the design is complex, so that the chip area is large, the cost is high, and the system integration is not facilitated.
Another class is analog temperature compensation methods. The analog temperature compensation method is mainly realized by designing a bias circuit with a temperature compensation function, and is characterized by simple and easy realization of principle and low cost, but the existing analog temperature compensation method can not conveniently adjust the grid voltage (namely compensation quantity) at different temperatures, and the compensation circuit needs to be recalculated and designed for amplifiers designed for mos tubes with different sizes and different compensation quantities.
Disclosure of Invention
The invention aims to realize quick and simple adjustment of temperature compensation quantity of a radio frequency amplifier.
In order to achieve the above object, the present invention provides a temperature compensation circuit for a radio frequency amplifier, the temperature compensation circuit being configured to generate a voltage with an adjustable value and being related to an ambient temperature, and input the generated voltage to a gate of the radio frequency amplifier.
The traditional temperature compensation method has the defects of complex design, inconvenient compensation amount adjustment and the like. The temperature compensation circuit of the radio frequency amplifier is simple in structure, is realized by adopting a pure circuit, can generate voltage which is related to the environment temperature and adjustable in numerical value, and is input into the grid of the radio frequency amplifier to realize quick and simple adjustment of the temperature compensation quantity of the radio frequency amplifier.
Preferably, the radio frequency amplifier temperature compensation circuit includes:
the bias voltage generating unit is used for dividing the voltage of a power supply to generate a first bias voltage VF;
and the calibration voltage output unit is used for generating a second bias voltage Vg which is related to the environment temperature and has an adjustable numerical value based on the first bias voltage VF and inputting the second bias voltage Vg into the grid electrode of the radio frequency amplifier.
Preferably, the radio frequency amplifier temperature compensation circuit includes: and the temperature sensitive unit is used for being connected with the power supply voltage and generating a third bias voltage Vs which is related to the environment temperature and has an adjustable value and is input to the grid of the radio frequency amplifier.
Preferably, the bias generating unit includes a resistor R1 and a resistor R2, and the calibration voltage output unit includes: diode M1 and resistance R3, wherein, the one end and the power input end of resistance R1 are connected, the one end ground connection of resistance R2, the other end of resistance R1 and the other end of resistance R2 all are connected with diode M1's positive pole, diode M1's negative pole and resistance R3's one end all are connected with the grid of radio frequency amplifier, resistance R3's the other end ground connection.
The power supply is divided by the resistors R1 and R2, the resistance values of the resistors R1 and R2 and the value of the voltage VCC jointly determine the magnitude of the anode bias voltage of the diode, and the bias voltage VF of the diode can be adjusted by adjusting the values of the resistors R1 and R2; under the action of the bias voltage VF, the diode will generate a certain current Id, which through R3 generates a supply voltage Vg to the amplifier gate. By adjusting VF, diode size and resistance of R3, the power supply voltage Vg of the amplifier grid can be adjusted, the current value Id generated by the diode at different temperatures can generate different variable quantities under the conditions of different bias voltages VF and different diode sizes, the larger the diode bias voltage VF is, the smaller the diode size is, the larger the variable quantity of current at different temperatures is, and the variable quantity of the power supply voltage Vg of the amplifier grid at different temperatures can be adjusted by changing the resistance of R3.
The invention also provides a method for adjusting the gate voltage Vg of the radio frequency amplifier based on the temperature compensation circuit of the radio frequency amplifier, which adjusts the value of the resistor R1, the value of the resistor R2, the size of the diode M1 and the value of the resistor R3 to adjust the gate voltage Vg of the input radio frequency amplifier.
Preferably, the temperature sensitive unit includes: resistance R4 and resistance R5, the one end and the power input end of resistance R4 are connected, and the one end ground connection of resistance R5, the other end of resistance R4 and the other end of resistance R5 all are connected with the grid of radio frequency amplifier.
The power supply is divided by resistors R4 and R5, and the resistance values of the resistors R4 and R5 and the value of the power supply voltage VCC jointly determine the power supply voltage Vs of the amplifier gate. By adjusting the magnitudes of R4 and R5, the variation of the amplifier gate supply voltage Vs from Vs at different temperatures can be adjusted.
Preferably, when the required amount of change in Vs is small at different temperatures, the resistor R4 is a positive temperature coefficient thermistor, and the resistor R5 is a non-thermistor.
Preferably, when the required variation amount of Vs is large at different temperatures, the resistor R4 is a positive temperature coefficient thermistor, and the resistor R5 is a negative temperature coefficient thermistor.
Preferably, when the required amount of change in Vs is small at different temperatures, the resistor R4 is a non-thermistor, and the resistor R5 is a negative temperature coefficient thermistor.
Preferably, the transistor in the radio frequency amplifier is a mos transistor.
The method can be seen that the voltage of the gate of the radio frequency amplifier can be adjusted only by adjusting the value of the resistor R1, the value of the resistor R2, the size of the diode M1 and the value of the resistor R3, and compared with the traditional analog compensation circuit, the method is quicker and more efficient, and compared with a digital temperature compensation method, the method is simple in design, lower in cost and easy to integrate.
The invention also provides a method for adjusting the gate voltage of the radio frequency amplifier based on the temperature compensation circuit of the radio frequency amplifier, which adjusts the gate voltage Vs of the input radio frequency amplifier by adjusting the value of the resistor R4 and the value of the resistor R5.
One or more technical schemes provided by the invention at least have the following technical effects or advantages:
the invention can quickly and efficiently adjust the voltage of the grid electrode of the input radio frequency amplifier, is quicker and more efficient compared with the traditional analog compensation circuit, has simple design, lower cost and easy integration compared with a digital temperature compensation method, and reduces the difficulty and complexity of the design of the temperature compensation circuit under different conditions.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention;
FIG. 1 is a schematic diagram of a diode-based RF amplifier temperature compensation circuit;
FIG. 2 is a schematic diagram of a thermistor-based RF amplifier temperature compensation circuit;
3-4 are schematic diagrams of output currents of diodes with different sizes under different bias voltages and different temperatures;
FIG. 5 is a diagram illustrating the resistance of the positive slope resistor at different temperatures;
FIG. 6 is a diagram illustrating the resistance of the negative slope resistor at different temperatures.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other without conflicting with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described and thus the scope of the present invention is not limited by the specific embodiments disclosed below.
Example one
Referring to fig. 1, fig. 1 is a schematic diagram of a temperature compensation circuit of a diode-based rf amplifier, the adaptive temperature compensation circuit of the present embodiment includes a bias voltage generating unit and a calibration voltage output unit.
The bias voltage generating unit comprises two resistors R1 and R2 which are connected in series, the common end of the two resistors is connected with the anode of a diode M1 in the calibration voltage output unit, the other end of the R1 is connected with a power supply VCC, and the other end of the R2 is grounded to divide the voltage of the power supply to generate diode bias voltage VF; the calibration voltage output unit is formed by connecting a diode M1 and a resistor R3 in series, the common terminal of the diode M1 and the resistor R3 is connected to the gate of the rf amplifier (i.e. the cathode of the diode), the other terminal of the resistor R3 is grounded, M2 in fig. 1 is the rf amplifier, RFin is the input terminal, and RFout is the output terminal.
The power supply is divided by the resistors R1 and R2, the resistance values of the resistors R1 and R2 and the value of the voltage VCC jointly determine the magnitude of the diode anode bias voltage, and the diode bias voltage VF can be adjusted by adjusting the values of the resistors R1 and R2; under the action of the bias voltage VF, the diode will generate a certain current Id, the current generates a supply voltage Vg to the gate of the amplifier through R3, and the supply voltage Vg (i.e., a second bias voltage) to the gate of the amplifier can be adjusted by adjusting VF, the size of the diode, and the resistance of R3.
The current value Id generated by the diode at different temperatures will generate different current variation under different bias voltages VF and different diode sizes, as shown in fig. 3-4, where fig. 3-4 are schematic diagrams of output currents of diodes of different sizes at different bias voltages and different temperatures, where W is the diode width, L is the diode length, and NF is the diode index. The larger the diode bias voltage VF is, the smaller the diode size is, the larger the current variation at different temperatures is, and the variation of the amplifier grid supply voltage Vg at different temperatures can be adjusted by changing the resistance value of R3.
Vg = Id R3, VF = VCC R1/(R1 + R2), and VF is related to diode size and Id as shown in fig. 3-4, vg increases at high temperatures and decreases at low temperatures.
In the embodiment, the gate voltage Vg of the amplifier is automatically adjusted at different temperatures by using the temperature characteristic of the diode, so that temperature compensation is realized. The circuit can freely adjust the grid voltage Vg of the amplifier and the variable quantity of the Vg at different temperatures by changing the size of the diode and the resistance values of the external resistors R1, R2 and R3, and greatly reduces the difficulty and complexity of the design of the temperature compensation circuit under different conditions.
Example two
Referring to fig. 2, fig. 2 is a schematic diagram of a thermistor-based rf amplifier temperature compensation circuit for generating a voltage with an adjustable value and related to an ambient temperature, and inputting the generated voltage to a gate of the rf amplifier.
In an embodiment of the present invention, the radio frequency amplifier temperature compensation circuit includes: and the temperature sensitive unit is used for being connected with the power supply voltage and generating a third bias voltage Vs which is related to the environment temperature and has an adjustable value and is input to the grid of the radio frequency amplifier.
In an embodiment of the present invention, the temperature-sensitive unit includes: resistance R4 and resistance R5, the one end and the power input end of resistance R4 are connected, and the one end ground connection of resistance R5, the other end of resistance R4 and the other end of resistance R5 all are connected with the grid of radio frequency amplifier.
The common end of the resistor R4 and the resistor R5 is connected with the grid of the amplifier, the other end of the resistor R5 is connected with the power supply, the other end of the resistor R4 is grounded to divide the power supply to generate a bias voltage Vs, M3 in the graph of FIG. 2 is a radio frequency amplifier, RFin is an input end, and RFout is an output end.
The power supply is divided by the resistors R4 and R5, the resistance values of the resistors R4 and R5 and the value of the voltage VCC jointly determine the supply voltage Vs of the amplifier gate, and the variation of the supply voltage Vs of the amplifier gate and the variation of the supply voltage Vs at different temperatures can be adjusted by adjusting the resistance values of the resistors R4 and R5.
The resistance of R4 shows a positive slope at different temperatures, the high temperature is higher, the low temperature is lower, the resistance of R5 shows no change along with the temperature at different temperatures, and the high temperature, the low temperature and the normal temperature are close to each other. By selecting the two resistors with different temperature characteristics, vs can be smaller at low temperature and larger at high temperature, so that the temperature compensation effect is achieved.
Knowing the principles of temperature compensation, different combinations of R4 and R5 values can be used depending on the desired value of Vs. It is known that Vs = VCC [ R4/(R4 + R5) ], and from the above formula, when the R4 resistance shows a positive slope and the R5 resistance is substantially constant, the temperature compensation condition is satisfied, and the Vs variation required at different temperatures is small. Meanwhile, there are two combination cases: the resistance value of R4 is represented as a positive slope, the resistance value of R5 is represented as a negative slope, and the resistance value is used when the Vs variation required at different temperatures is large; the R4 resistance value is basically unchanged, the R5 resistance value is represented as a negative slope, and the variable quantity of Vs required at different temperatures is small; VG can be made smaller at low temperature and larger at high temperature. Fig. 5 is a schematic diagram of resistance values of the positive slope resistor at different temperatures, and fig. 6 is a schematic diagram of resistance values of the negative slope resistor at different temperatures.
In the embodiment, the resistors R5 and R4 with different temperature coefficients are used to adjust the gate voltage Vs of the amplifier and the variation of the gate voltage Vs at different temperatures, thereby greatly reducing the difficulty and complexity of the temperature compensation circuit design under different conditions.
EXAMPLE III
On the basis of the first embodiment, the third embodiment of the present invention provides a method for adjusting a gate voltage Vg of a radio frequency amplifier based on the temperature compensation circuit of the radio frequency amplifier, where the gate voltage Vg of the input radio frequency amplifier is adjusted by adjusting a value of a resistor R1, a value of a resistor R2, a size of a diode M1, and a value of a resistor R3.
The method can be seen that the size of the gate voltage Vg of the input radio frequency amplifier can be adjusted only by adjusting the value of the resistor R1, the value of the resistor R2, the size of the diode M1 and the value of the resistor R3, and compared with the traditional analog compensation circuit, the method is quicker and more efficient, and compared with a digital temperature compensation method, the method is simple in design, lower in cost and easy to integrate.
Example four
On the basis of the second embodiment, the invention further provides a method for adjusting the gate voltage of the radio frequency amplifier based on the temperature compensation circuit of the radio frequency amplifier, wherein the gate voltage Vs of the input radio frequency amplifier is adjusted by adjusting the power voltage, the value of the resistor R4 and the value of the resistor R5.
The method can be seen that the voltage of the input radio frequency amplifier grid electrode can be adjusted only by adjusting the power supply voltage, the value of the resistor R4 and the value of the resistor R5, compared with the traditional analog temperature compensation circuit, the method is quicker and more efficient, and compared with a digital temperature compensation method, the method is simple in design, lower in cost and easy to integrate.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. The radio frequency amplifier temperature compensation circuit is characterized in that the radio frequency amplifier temperature compensation circuit is used for generating a voltage which is related to the environment temperature and has an adjustable value, and inputting the generated voltage into a grid electrode of the radio frequency amplifier.
2. The radio frequency amplifier temperature compensation circuit of claim 1, wherein the radio frequency amplifier temperature compensation circuit comprises:
the bias voltage generating unit is used for dividing the voltage of a power supply to generate a first bias voltage VF;
and the calibration voltage output unit is used for generating a second bias voltage Vg which is related to the environment temperature and has an adjustable numerical value based on the first bias voltage VF and inputting the second bias voltage Vg into the grid electrode of the radio frequency amplifier.
3. The radio frequency amplifier temperature compensation circuit of claim 1, wherein the radio frequency amplifier temperature compensation circuit comprises: and the temperature sensitive unit is used for being connected with the power supply voltage and generating a third bias voltage Vs which is related to the environment temperature and has an adjustable value and is input to the grid of the radio frequency amplifier.
4. The temperature compensation circuit of claim 2, wherein the bias voltage generating unit comprises a resistor R1 and a resistor R2, and the calibration voltage output unit comprises: diode M1 and resistance R3, wherein, the one end and the power input end of resistance R1 are connected, the one end ground connection of resistance R2, the other end of resistance R1 and the other end of resistance R2 all are connected with diode M1's positive pole, diode M1's negative pole and resistance R3's one end all are connected with the grid of radio frequency amplifier, resistance R3's the other end ground connection.
5. The radio frequency amplifier temperature compensation circuit of claim 3, wherein the temperature sensitive unit comprises: resistance R4 and resistance R5, the one end and the power input end of resistance R4 are connected, and the one end ground connection of resistance R5, the other end of resistance R4 and the other end of resistance R5 all are connected with the grid of radio frequency amplifier.
6. The temperature compensation circuit of claim 5, wherein the resistor R4 is a positive temperature coefficient thermistor, and the resistor R5 is a non-thermistor.
7. The temperature compensation circuit of claim 5, wherein the resistor R4 is a positive temperature coefficient thermistor and the resistor R5 is a negative temperature coefficient thermistor.
8. The temperature compensation circuit of claim 5, wherein the resistor R4 is a non-thermistor and the resistor R5 is a negative temperature coefficient thermistor.
9. The method for adjusting the gate voltage of an rf amplifier based on the temperature compensation circuit of an rf amplifier of claim 4, wherein the second bias voltage Vg input to the gate of the rf amplifier is adjusted by adjusting the value of the resistor R1, the value of the resistor R2, the size of the diode M1 and the value of the resistor R3.
10. A method for adjusting gate voltage of an RF amplifier based on the temperature compensation circuit of the RF amplifier of claim 5, wherein the third bias voltage Vs inputted to the gate of the RF amplifier is adjusted by adjusting the value of the resistor R4 and the value of the resistor R5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310078861.0ACN115967359B (en) | 2023-01-16 | 2023-01-16 | Temperature compensation circuit of radio frequency amplifier and grid voltage adjusting method of radio frequency amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310078861.0ACN115967359B (en) | 2023-01-16 | 2023-01-16 | Temperature compensation circuit of radio frequency amplifier and grid voltage adjusting method of radio frequency amplifier |
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| CN115967359B CN115967359B (en) | 2024-03-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5724004A (en)* | 1996-06-13 | 1998-03-03 | Motorola, Inc. | Voltage bias and temperature compensation circuit for radio frequency power amplifier |
| CN101656511A (en)* | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | Temperature compensating circuit of radio frequency power amplifier |
| CN202076989U (en)* | 2011-06-24 | 2011-12-14 | 惠州市正源微电子有限公司 | Temperature compensation circuit of radio-frequency power amplifier |
| CN107147366A (en)* | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
| CN110739917A (en)* | 2019-11-12 | 2020-01-31 | 苏州华太电子技术有限公司 | Temperature compensation circuit based on radio frequency power amplifier |
- 2023
- 2023-01-16CNCN202310078861.0Apatent/CN115967359B/enactiveActive
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5724004A (en)* | 1996-06-13 | 1998-03-03 | Motorola, Inc. | Voltage bias and temperature compensation circuit for radio frequency power amplifier |
| CN101656511A (en)* | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | Temperature compensating circuit of radio frequency power amplifier |
| CN202076989U (en)* | 2011-06-24 | 2011-12-14 | 惠州市正源微电子有限公司 | Temperature compensation circuit of radio-frequency power amplifier |
| CN107147366A (en)* | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
| CN110739917A (en)* | 2019-11-12 | 2020-01-31 | 苏州华太电子技术有限公司 | Temperature compensation circuit based on radio frequency power amplifier |
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