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本发明涉及等离子技术领域,尤其涉及一种气盘以及PECVD镀膜设备。The invention relates to the field of plasma technology, in particular to a gas tray and PECVD coating equipment.
背景技术Background technique
PECVD镀膜设备主要用于在洁净真空环境下进行氮化硅和氧化硅的薄膜生长,采用单频或双频等离子增强型化学气相沉积技术,是沉积高质量的氮化硅、氧化硅等薄膜的理想工艺设备。PECVD coating equipment is mainly used for the growth of silicon nitride and silicon oxide films in a clean vacuum environment. It adopts single-frequency or dual-frequency plasma-enhanced chemical vapor deposition technology, which is the best choice for depositing high-quality silicon nitride and silicon oxide films. Ideal process equipment.
PECVD镀膜设备在工作时,需要通入不同工艺气体,工艺气体的混合的均匀性直接影响到样品表面的成膜均匀性。由于PECVD镀膜设备内的空间受限,因此,气体在镀膜设备内的出气位置与样品之间的距离有限,这样一来,气体还未混合充分就沉积在样品表面,从而导致成膜质量不高。因此,需要一种气盘可以先将气体均匀混合后再排出至样品表面进行沉积。When PECVD coating equipment is working, different process gases need to be fed in, and the uniformity of process gas mixing directly affects the uniformity of film formation on the sample surface. Due to the limited space in the PECVD coating equipment, the distance between the outlet position of the gas in the coating equipment and the sample is limited. In this way, the gas is deposited on the surface of the sample without being fully mixed, resulting in low film quality. . Therefore, there is a need for a gas tray that can firstly mix the gas evenly and then discharge it to the surface of the sample for deposition.
发明内容Contents of the invention
本发明的实施例提供一种气盘以及PECVD镀膜设备,解决了不同工艺气体混合不充分在样品表面沉积成膜质量不高的问题。Embodiments of the present invention provide a gas pan and PECVD film coating equipment, which solves the problem of insufficient mixing of different process gases and low-quality film deposition on the surface of a sample.
为达到上述目的,本发明的实施例采用如下技术方案:In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:
一方面,本发明实施例提供一种气盘,应用于镀膜设备,气盘用于混合不同工艺气体,镀膜设备包括真空室,真空室内部形成有真空腔。On the one hand, an embodiment of the present invention provides a gas pan, which is applied to a film coating device. The gas pan is used for mixing different process gases. The film coating device includes a vacuum chamber, and a vacuum chamber is formed inside the vacuum chamber.
其中,气盘位于真空腔内,且与真空腔顶壁相连,气盘内形成依次相连的第一气腔、第二气腔和第三气腔;第一气腔和第二气腔之间具有第一隔离壁,第一隔离壁上开设有若干个第一通孔;第二气腔和第三气腔之间具有第二隔离壁,第二隔离壁上开设有若干个第二通孔;第三气腔具有与第二隔离壁相对的第三隔离壁,第三隔离壁上开设有若干个第三通孔,第三通孔的出气方向朝向所需镀膜的样品;Wherein, the air disc is located in the vacuum chamber and is connected with the top wall of the vacuum chamber, and the first air chamber, the second air chamber and the third air chamber connected in sequence are formed in the air disc; the gap between the first air chamber and the second air chamber is It has a first partition wall, and several first through holes are opened on the first partition wall; there is a second partition wall between the second air chamber and the third air chamber, and several second through holes are opened on the second partition wall ; The third air cavity has a third partition wall opposite to the second partition wall, and several third through holes are provided on the third partition wall, and the gas outlet direction of the third through holes faces the sample of the required coating;
该气盘还包括若干个毛细管,具有管孔,毛细管的一端与第一隔离壁相连,且毛细管的一端的管孔与第一通孔相连通;毛细管的一部分位于第二通孔内,且毛细管的外壁与第二通孔壁之间具有间隙。The air disc also includes several capillary tubes with tube holes, one end of the capillary tube is connected with the first partition wall, and the tube hole at one end of the capillary tube is connected with the first through hole; a part of the capillary tube is located in the second through hole, and the capillary tube There is a gap between the outer wall of the second through hole and the wall of the second through hole.
其中,第一气腔和第二气腔内通入不同工艺气体。Wherein, different process gases are passed into the first air chamber and the second air chamber.
在此情况下,在进行镀膜时,第一气腔内通入的气体先经过第一隔离壁上的第一通孔,而后进入通过毛细管的管孔进入到第三气腔内。第二气腔内的气体由毛细管外壁与第二通孔壁之间具有的间隙处进入到第三气腔内,从而最终在第三气腔内混合。首先,在第一气腔内聚集的气体由毛细管的管孔进行分散,在毛细管的另一端排入至第三气腔内。其次,在第二气腔内聚集的气体由毛细管外壁与第二通孔孔壁之间的间隙进行分散,而后由该间隙排入至第三气腔内,由于单个毛细管与同一个毛细管外的间隙距离最近。因此,同一个毛细管内的气体和间隙处的气体最先混合,也就是说,多个毛细管和毛细管周边的间隙将第一气腔内的气体和第二气腔内的气体分为若干个混合部分,这样一来,气体更为分散,混合更为均匀。In this case, when performing film coating, the gas introduced into the first gas chamber first passes through the first through hole on the first partition wall, and then enters the tube hole passing through the capillary tube into the third gas chamber. The gas in the second air chamber enters into the third air chamber from the gap between the outer wall of the capillary and the wall of the second through hole, and finally mixes in the third air chamber. First, the gas accumulated in the first air chamber is dispersed through the capillary tube hole, and discharged into the third air chamber at the other end of the capillary. Secondly, the gas accumulated in the second air chamber is dispersed by the gap between the outer wall of the capillary and the wall of the second through hole, and then discharged into the third air chamber from the gap, because the single capillary and the same capillary The gap distance is the closest. Therefore, the gas in the same capillary and the gas in the gap are mixed first, that is to say, the gas in the first gas cavity and the gas in the second gas cavity are divided into several mixing channels by the multiple capillaries and the gap around the capillary. In this way, the gas is more dispersed and mixed more uniformly.
进一步地,毛细管远离第一隔离壁的一端的端面与第二隔离壁靠近第三隔离壁的一侧表面平行。Further, the end surface of the capillary away from the first partition wall is parallel to the side surface of the second partition wall close to the third partition wall.
进一步地,第三隔离壁与第二隔离壁之间活动相连。Further, the third partition wall is movably connected with the second partition wall.
进一步地,气盘还包括冷水板,中间开设有第一中心孔,在冷水板的一侧面,绕第一中心孔开设一圈第一环形凹槽;冷水板具有第一环形凹槽的一侧,与第一气腔上表面相连,且围成第一冷却腔。第一冷却腔内通入冷却液。Further, the air pan also includes a cold water plate, with a first central hole in the middle, and a first annular groove around the first central hole on one side of the cold water plate; the cold water plate has a side of the first annular groove , connected to the upper surface of the first air cavity, and enclosing the first cooling cavity. Cooling liquid is passed into the first cooling chamber.
另一方面,本发明实施例还提供一种PECVD镀膜设备,包括上述提及的气盘、真空室、升降组件以及样品台。样品台设置于真空室的真空腔内,且与真空室相连,样品台具有承载面,承载面用于放置样品,承载面与气盘的第三通孔相对设置。升降组件设置于真空室外壁顶部,且与真空室相连,升降组件的一部分伸入至真空腔内与气盘相连,升降组件用于控制进气盘沿靠近承载面或者远离承载面的方向移动,从而调整样品与第三通孔之间的距离。On the other hand, the embodiment of the present invention also provides a PECVD coating equipment, including the above-mentioned gas plate, vacuum chamber, lifting assembly and sample stage. The sample stage is arranged in the vacuum cavity of the vacuum chamber and is connected with the vacuum chamber. The sample stage has a bearing surface for placing samples, and the bearing surface is arranged opposite to the third through hole of the gas plate. The lifting assembly is arranged on the top of the outer wall of the vacuum chamber and is connected to the vacuum chamber. A part of the lifting assembly extends into the vacuum chamber and connects with the gas plate. The lifting assembly is used to control the air intake plate to move in a direction close to or away from the bearing surface. Thereby adjusting the distance between the sample and the third through hole.
进一步地,该升降组件包括支架、电机、丝杠、连接筒和升降块,其中,Further, the lifting assembly includes a bracket, a motor, a lead screw, a connecting cylinder and a lifting block, wherein,
支架与真空室的顶壁外侧相连。电机与支架远离真空室的一端相连,电机具有联轴器。丝杠的一端与联轴器同轴相连,另一端与支架相连。连接筒一端与气盘远离真空室的一侧相连。升降块内开设有螺纹孔,升降块套设于丝杠上,升降块外表面与连接筒相连;其中,电机用于驱动丝杠转动,从而使得升降块进行升降。The bracket is connected to the outside of the top wall of the vacuum chamber. The motor is connected with the end of the support away from the vacuum chamber, and the motor has a coupling. One end of the lead screw is connected coaxially with the coupling, and the other end is connected with the bracket. One end of the connecting cylinder is connected with the side of the air disc away from the vacuum chamber. There are threaded holes in the lifting block, the lifting block is sleeved on the screw, and the outer surface of the lifting block is connected with the connecting cylinder; wherein, the motor is used to drive the screw to rotate, so that the lifting block can be lifted.
进一步地,样品台包括固定环、多个第一导电柱、加热盘、至少一个热屏蔽罩、水冷盘、第一支撑环、多个支撑杆和托环,其中,固定环,设置于真空腔内,固定环的侧壁开设一个第一凹槽,且第一凹槽与固定环的上表面相连通。多个第一导电柱一端与固定环的一侧垂直相连,另一端与真空腔底壁相连。加热盘设置于固定环下方,且加热盘的盘面与固定环的环面平行。Further, the sample stage includes a fixed ring, a plurality of first conductive columns, a heating plate, at least one heat shield, a water cooling plate, a first support ring, a plurality of support rods and a supporting ring, wherein the fixed ring is arranged in the vacuum chamber Inside, a first groove is provided on the side wall of the fixing ring, and the first groove communicates with the upper surface of the fixing ring. One end of the plurality of first conductive posts is vertically connected to one side of the fixing ring, and the other end is connected to the bottom wall of the vacuum chamber. The heating plate is arranged under the fixing ring, and the surface of the heating plate is parallel to the ring surface of the fixing ring.
至少一个热屏蔽罩具有第二凹槽,设置于加热盘下方,且第二凹槽槽口朝向加热盘。水冷盘设置于热屏蔽罩下方。第一支撑环设置于水冷盘远离热屏蔽罩的一侧,且与第一导电柱相连。多个支撑杆一端与第一支撑环相连,另一端穿过水冷盘和热屏蔽罩与加热盘相连。托环放置于固定环远离加热盘的一侧,托环用于承载样品。At least one heat shield has a second groove, which is arranged under the heating plate, and the opening of the second groove faces the heating plate. The water cooling plate is arranged under the heat shield. The first support ring is arranged on a side of the water cooling plate away from the heat shield and connected to the first conductive column. One end of the plurality of support rods is connected with the first support ring, and the other end is connected with the heating plate through the water cooling plate and the heat shield. The support ring is placed on the side of the fixed ring away from the heating plate, and the support ring is used to carry the sample.
进一步地,托环远离加热盘的一侧绕托环的内周一圈开设有卡槽。托环具有卡槽一侧为承载面。Further, the side of the support ring away from the heating plate is provided with a locking groove around the inner circumference of the support ring. The side of the support ring with the slot is the bearing surface.
进一步地,加热盘包括第一加热板、加热丝和第二加热板。其中,第一加热板一侧绕第一加热板的周向开设螺旋形限位槽。加热丝绕设于限位槽内。Further, the heating plate includes a first heating plate, a heating wire and a second heating plate. Wherein, one side of the first heating plate is provided with a spiral limiting groove around the circumference of the first heating plate. The heating wire is wound in the limiting groove.
第二加热板盖设与第一加热板具有限位槽的一侧,且与第一加热板相连。第一加热板的中心用于安装热偶;第二加热板位于第一加热板远离固定环一侧。其中 ,加热丝的两端分别通正负极电源。The second heating plate is covered with a side of the first heating plate having a limiting groove, and is connected with the first heating plate. The center of the first heating plate is used to install the thermocouple; the second heating plate is located on the side of the first heating plate away from the fixed ring. Among them, the two ends of the heating wire are connected to the positive and negative power supplies respectively.
进一步地,PECVD镀膜设备还包括第一导电环、第二支撑环、多个第二导电柱、第二导电环、绝缘套和射频电源。其中,第一导电环设置于固定环和第一支撑环之间,且与第一导电柱相连。第二支撑环设置于气盘远离样品台的一侧,且与连接筒相连。多个第二导电柱一端与冷水板相连,另一端与第二支撑环相连。第二导电环设置于气盘和第二支撑环之间,且与第二导电柱相连。第一导电柱和第二导电柱上设置绝缘套。射频电源与第一导电环和第二导电环之间的第一导电柱、第二导电柱相连,托盘和气盘之间形成离化区域。Further, the PECVD film coating equipment also includes a first conductive ring, a second support ring, a plurality of second conductive pillars, a second conductive ring, an insulating sleeve and a radio frequency power supply. Wherein, the first conductive ring is arranged between the fixed ring and the first support ring, and is connected with the first conductive column. The second support ring is arranged on the side of the gas plate away from the sample stage, and is connected with the connecting cylinder. One end of the plurality of second conductive columns is connected with the cold water plate, and the other end is connected with the second supporting ring. The second conductive ring is arranged between the air disk and the second support ring, and connected with the second conductive column. An insulating sleeve is arranged on the first conductive column and the second conductive column. The radio frequency power supply is connected to the first conductive column and the second conductive column between the first conductive ring and the second conductive ring, and an ionized area is formed between the tray and the air disc.
附图说明Description of drawings
图1为本发明实施例提供的一种PECVD镀膜设备示意图;Fig. 1 is a kind of PECVD coating equipment schematic diagram that the embodiment of the present invention provides;
图2为本发明实施例提供的图1中的PECVD镀膜设备剖视示意图;FIG. 2 is a schematic cross-sectional view of the PECVD coating equipment in FIG. 1 provided by an embodiment of the present invention;
图3为本发明实施例提供的图1中的升降组件示意图;Fig. 3 is a schematic diagram of the lifting assembly in Fig. 1 provided by an embodiment of the present invention;
图4为本发明实施例提供的图2中的样品台示意图;FIG. 4 is a schematic diagram of the sample stage in FIG. 2 provided by an embodiment of the present invention;
图5为本发明实施例提供的图4中的样品台剖视示意图;Fig. 5 is a schematic cross-sectional view of the sample stage in Fig. 4 provided by an embodiment of the present invention;
图6为本发明实施例提供的一种托盘和加热盘位置关系示意图;Fig. 6 is a schematic diagram of the positional relationship between a tray and a heating plate provided by an embodiment of the present invention;
图7为本发明实施例提供的另一种托盘和加热盘位置关系示意图;Fig. 7 is a schematic diagram of the positional relationship between another tray and the heating plate provided by the embodiment of the present invention;
图8为本发明实施例提供的第一加热板、加热丝和第二加热板示意图;Fig. 8 is a schematic diagram of a first heating plate, a heating wire and a second heating plate provided by an embodiment of the present invention;
图9为本发明实施例提供的图8中的第一加热板示意图;Fig. 9 is a schematic diagram of the first heating plate in Fig. 8 provided by an embodiment of the present invention;
图10为本发明实施例提供的样品台和气盘剖视示意图;Figure 10 is a schematic cross-sectional view of a sample stage and an air tray provided by an embodiment of the present invention;
图11为本发明实施例提供的图10中的气盘剖视示意图;Figure 11 is a schematic cross-sectional view of the gas tray in Figure 10 provided by an embodiment of the present invention;
图12为本发明实施例提供的图11中的c处放大示意图;Fig. 12 is an enlarged schematic diagram of point c in Fig. 11 provided by an embodiment of the present invention;
图13为本发明实施例提供的图1中的过滤器剖视示意图。Fig. 13 is a schematic cross-sectional view of the filter in Fig. 1 provided by an embodiment of the present invention.
具体实施方式Detailed ways
下面结合附图对本发明实施例进行详细描述。Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
在本发明的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In describing the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the invention.
术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。The terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
如图1和图2所示,本发明实施例还提供一种PECVD镀膜设备100,包括上述提及的气盘101、真空室102、升降组件103以及样品台104。样品台104设置于真空室102的真空腔内,且与真空室102相连,样品台104具有承载面,承载面用于放置样品,气盘101靠近承载面一侧开设第三通孔10161,承载面与气盘101的第三通孔10161相对设置。升降组件103设置于真空室102外壁顶部,且与真空室102相连,升降组件103的一部分伸入至真空腔内与气盘101相连,升降组件103用于控制进气盘101沿靠近承载面或者远离承载面的方向移动,从而调整样品与第三通孔10161之间的距离。As shown in FIG. 1 and FIG. 2 , the embodiment of the present invention also provides a
在此情况下,用户在进行操作时,可以将样品放置在真空室102内的承载面上,然后根据需求调整样品和第三通孔10161之间的间距,当距离调整完成后,开始向气盘101内通入气体,气体在气盘101内进行混合后由第三通孔10161排出并在样品表面进行沉积,从而形成薄膜。In this case, the user can place the sample on the bearing surface in the
以下对上水提及的该升降组件103结构进行举例说明,例如,在本申请的一些实施例中,如图3所示,该升降组件103可以包括支架1031、电机1032、丝杠1033、连接筒1034和升降块1035,其中,支架1031与真空室102的顶壁外侧相连。电机1032与支架1031远离真空室102的一端相连,电机1032具有联轴器。丝杠1033的一端与联轴器同轴相连,另一端与支架1031相连。连接筒1034一端与气盘101远离样品台104的一侧相连。升降块1035内开设有螺纹孔,升降块1035套设于丝杠1033上,升降块1035外表面与连接筒1034相连;其中,电机1032用于驱动丝杠1033转动,从而使得升降块1035进行升降。The structure of the lifting
这样一来,电机1032用于驱动丝杠1033转动,从而使得升降块1035升降带动支杆相对于支架1031移动。通过升降组件103可以保证靶本体实现正常且高效的行程调节工作。In this way, the
以下对上述提及的样品台104结构进行举例说明,例如,在本申请的一些实施例中,如图4和图5所示,该样品台104可以包括固定环1041、多个第一导电柱1042、加热盘1043、至少一个热屏蔽罩1044、水冷盘1045、第一支撑环1046、多个支撑杆1047和托环1048,其中,固定环1041设置于真空腔内,固定环1041的侧壁开设一个第一凹槽,且第一凹槽与固定环1041的上表面相连通。多个第一导电柱1042一端与固定环1041的一侧垂直相连,另一端与真空腔底壁相连。加热盘1043设置于固定环1041下方,且加热盘1043的盘面与固定环1041的环面平行。至少一个热屏蔽罩1044具有第二凹槽,设置于加热盘1043下方,且第二凹槽槽口朝向加热盘1043。水冷盘1045设置于热屏蔽罩1044下方。第一支撑环1046设置于水冷盘1045远离热屏蔽罩1044的一侧,且与第一导电柱1042相连。多个支撑杆1047一端与第一支撑环1046相连,另一端穿过水冷盘1045和热屏蔽罩1044与加热盘1043相连。托环1048放置于固定环1041远离加热盘1043的一侧,托环1048用于承载样品。The structure of the above-mentioned
这样一来,多个支撑杆1047可以均匀分布对第一支撑环1046进行支撑,并对上面的加热盘1043进行支撑,热屏蔽罩1044和水冷盘1045可以与第一导电柱1042相连,从而进行固定。热屏蔽罩1044用于对加热盘1043进行聚温防止热量流失过快。水冷盘1045用于控温或者在进行降温时使用。固定环1041可以与第一导电柱1042相连,用于支撑托环1048,托环1048上可以用于承载样品进行镀膜。In this way, a plurality of
具体地,该托环1048远离加热盘1043的一侧绕托环1048的内周一圈可以开设有卡槽。如图5所示,样品1050四周卡设于卡槽内,且样品1050在加热盘1043上的垂直投影面积小于等于加热盘1043的盘面,托环1048的上表面作为承载面。Specifically, the side of the
在此情况下,用户在使用时,可以将样品1050放置在托环1048上的内卡槽内,通过加持器具将托环1048和样品1050一起放置在固定环1041上表面。当需要取出样品1050时,可以再次通过固定环1041的第一凹槽处夹持托环1048携带样品1050取出。这样一来,用户可以间接取出样品1050,不会直接触碰样品1050以免造成污染。并且卡槽可以使得样品1050在托环1048更加稳定。In this case, the user can place the
此外,如图6所示,样品1050在加热盘1043上的垂直投影面积(如图6所示的a覆盖面积)等于加热盘1043的盘面(如图6所示b的覆盖面积)。如图7所示,托盘1049在加热盘1043上的垂直投影面积(如图7所示的a覆盖面积)等于加热盘1043的盘面(如图7所示b的覆盖面积),样品1050在托盘1049上的垂直投影面积a’是小于a的覆盖面积。这样一来,用户可以通过托盘1049的大小了解加热的范围值,并将样品1050放置在合理范围内,若样品1050面积大于托盘1049面积(即图7中a覆盖面积),显然加热时会受热不均(托盘1049周边加热温度不够导致),超过托盘1049面积的区域热量会减小。因此,用户可以更加快捷的识别受热范围,只要样品1050所需的加热面积小于等于托盘1049盘面积即可,方便操作。In addition, as shown in FIG. 6 , the vertical projected area of the
以下对上述提及的加热盘1043结构进行举例说明,例如,在本申请的一些实施例中,如图8所示,该加热盘1043可以包括第一加热板10431、加热丝10432和第二加热板10433。其中,如图9所示,第一加热板10431一侧绕第一加热板10431的周向开设螺旋形限位槽104311。加热丝10432绕设于限位槽内。第二加热板10433盖设与第一加热板10431具有限位槽104311的一侧,且与第一加热板10431相连。第一加热板10431的中心用于安装热偶;第二加热板10433位于第一加热板10431远离固定环1041一侧。其中 ,加热丝10432的两端分别通正负极电源。The structure of the
这样一来,加热丝10432绕设于限位槽104311内,由于限位槽104311呈螺旋形,在此情况下,加热丝10432通电时,可以将加热丝10432的热量均匀的分布在第一加热板10431和第二加热板10433上,从而对加热盘1043上的样品进行加热。In this way, the
本申请提及的PECVD镀膜设备100还可以包括如图10所示的第一导电环105、第二支撑环106、多个第二导电柱107、第二导电环108、绝缘套109和射频电源。其中,第一导电环105设置于固定环1041和第一支撑环1046之间,且与第一导电柱1042相连。第二支撑环106设置于气盘101远离样品台104的一侧,且与连接筒1034相连。多个第二导电柱107一端与冷水板110相连,另一端与第二支撑环106相连。第一导电柱1042与第二导电柱107上均设置绝缘套109,且第一导电环105和第二导电环108位于上下相对的两种导电柱绝缘套109之间。绝缘套109可以使得导电柱与真空室102内接触的部分绝缘,更加安全。射频电源与第一导电环105和第二导电环108之间的第一导电柱1042、第二导电柱107相连,托盘1049和气盘101之间形成离化区域。The
这样一来,射频电源给予第一导电柱1042和第二导电柱107进行通电,使得托盘1049和气盘101之间形成离化区域,从而气盘101排出的混合气体能够在样品台104上的样品表面形成薄膜。In this way, the radio frequency power supplies the first
以下对上述提及的气盘101结构进行举例说明,例如,在本申请的一些实施例中,该气盘101应用于镀膜设备100,气盘101用于混合不同工艺气体,镀膜设备100包括真空室102,真空室102内部形成有真空腔。The
其中,气盘101位于真空腔内,且与真空腔顶壁相连,如图11和图12所示,气盘101内形成依次相连的第一气腔1011、第二气腔1012和第三气腔1013;第一气腔1011和第二气腔1012之间具有第一隔离壁1014,第一隔离壁1014上开设有若干个第一通孔10141;第二气腔1012和第三气腔1013之间具有第二隔离壁1015,第二隔离壁1015上开设有若干个第二通孔10151;第三气腔1013具有与第二隔离壁1015相对的第三隔离壁1016,第三隔离壁1016上开设有若干个第三通孔10161,第三通孔10161的出气方向朝向所需镀膜的样品。Wherein, the
该气盘101还包括若干个毛细管1017,具有管孔,毛细管1017的一端与第一隔离壁1014相连,且毛细管1017的一端的管孔与第一通孔10141相连通;毛细管1017的一部分位于第二通孔10151内,且毛细管1017的外壁与第二通孔10151壁之间具有间隙。其中,第一气腔1011和第二气腔1012内通入不同工艺气体。The
在此情况下,在进行镀膜时,第一气腔1011内通入的气体先经过第一隔离壁1014上的第一通孔10141,而后进入通过毛细管1017的管孔进入到第三气腔1013内。第二气腔1012内的气体由毛细管1017外壁与第二通孔10151壁之间具有的间隙处进入到第三气腔1013内,从而最终在第三气腔1013内混合。首先,在第一气腔1011内聚集的气体由毛细管1017的管孔进行分散,在毛细管1017的另一端排入至第三气腔1013内。其次,在第二气腔1012内聚集的气体由毛细管1017外壁与第二通孔10151孔壁之间的间隙进行分散,而后由该间隙排入至第三气腔1013内,由于单个毛细管1017与同一个毛细管1017外的间隙距离最近。因此,同一个毛细管1017内的气体和间隙处的气体最先混合,也就是说,多个毛细管1017和毛细管1017周边的间隙将第一气腔1011内的气体和第二气腔1012内的气体分为若干个混合部分,这样一来,气体更为分散,混合更为均匀。In this case, when performing film coating, the gas introduced into the
具体地,毛细管1017远离第一隔离壁1014的一端的端面与第二隔离壁1015靠近第三隔离壁1016的一侧表面平行。在此情况下,当毛细管1017内的气体和毛细管1017旁间隙的气体是在第三气腔1013内混合,导致第二通孔10151堵塞。例如,若毛细管1017的管口在第二通孔10151内时,混合气体先在第二通孔10151内进行混合,若混合气体部分发生反应产生颗粒杂质时可能会在第二通孔10151内发生堵塞。不便于长期使用。又如,若毛细管1017的管口伸入至第三气腔1013内过多时,会导致毛细管1017内的气体过晚在第三气腔1013内散发混合。因此,可能会导致气体混合不充分。Specifically, the end surface of the capillary 1017 away from the
在本申请的一些实施例中,该第三隔离壁1016与第二隔离壁1015之间活动相连。这样一来,由于第三气腔1013是混合气体的部分,因此,若气体之间产生反应形成颗粒物对第三通孔10161堵塞时,可以将第三隔离壁1016拆卸下来进行清洗,从而再次安装使用。In some embodiments of the present application, the
为防止气盘101温度过高,在本申请的一些实施例中,该气盘101还包括冷水板110,中间开设有第一中心孔,在冷水板110的一侧面,绕第一中心孔开设一圈第一环形凹槽;冷水板110具有第一环形凹槽的一侧,与第一气腔1011上表面相连,且围成第一冷却腔。第一冷却腔内通入冷却液(可以为水)。由于在反应的过程中,离化区域的影响,以及下方加热盘1043的影响,气盘101会存在一定的升温,因此,为了防止气盘101升温对气盘101内的混合气体造成影响,在本申请的一些实施例中,冷水板110可以对气盘101进行一定的降温,从而保证气体的正常混合工作。In order to prevent the temperature of the
在本申请的另一些实施例中,该PECVD镀膜设备100还可以包括图13所示的,过滤器111、机械泵、电动蝶阀和分子泵(图13中未示出),其中,过滤器111具有过滤进口和过滤出口,且过滤进口与真空腔相连通。机械泵,过滤出口与机械泵相连通。电动蝶阀设置于机械泵与过滤出口之间。分子泵进口与真空室102底部相连通。分子泵出口与机械泵进口相连通。过滤器111包括外壳1111、过滤套筒1112、过滤棉和水冷管1113。其中,外壳1111具有过滤腔,外壳1111上开设有过滤进口和过滤出口,均与过滤腔相连通。过滤套筒1112设置于过滤腔内,且与外壳1111相连,过滤套筒1112的侧壁上开设有多个过滤孔(2~5mm),过滤套筒1112的侧壁与外壳1111的侧壁之间具有间隙。过滤套筒1112内安装过滤棉。水冷管1113,绕过滤套筒1112的外壁设置;其中,过滤进口与过滤套筒1112内的空间相连通,过滤出口与过滤套筒1112的侧壁与外壳1111的侧壁之间的间隙相连通。In other embodiments of the present application, the
通过机械泵和分子泵可以对真空室102内的真空腔抽真空,从而使得真空腔内处于真空状态。过滤器111中的过滤棉可以对真空腔内的气体进行过滤,而后通过过滤孔由过滤出口排入至真空泵内而后排出。这样一来,经过机械泵的气体均经过过滤器111过滤从而保证机械泵正常运行不会被污染损坏。The vacuum cavity in the
在本说明书的描述中,具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
| Application Number | Priority Date | Filing Date | Title |
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| CN202211429851.9ACN115786886A (en) | 2022-11-16 | 2022-11-16 | Gas disc and PECVD coating equipment |
| Application Number | Priority Date | Filing Date | Title |
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| CN202211429851.9ACN115786886A (en) | 2022-11-16 | 2022-11-16 | Gas disc and PECVD coating equipment |
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| CN115786886Atrue CN115786886A (en) | 2023-03-14 |
| Application Number | Title | Priority Date | Filing Date |
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| CN202211429851.9APendingCN115786886A (en) | 2022-11-16 | 2022-11-16 | Gas disc and PECVD coating equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103649369A (en)* | 2011-07-12 | 2014-03-19 | 艾克斯特朗欧洲公司 | Gas inlet member of a cvd reactor |
| CN104060238A (en)* | 2013-03-22 | 2014-09-24 | 灿美工程股份有限公司 | Liner Assembly And Substrate Processing Apparatus Having Same |
| CN220450290U (en)* | 2022-11-16 | 2024-02-06 | 鹏城微纳技术(沈阳)有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating equipment |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103649369A (en)* | 2011-07-12 | 2014-03-19 | 艾克斯特朗欧洲公司 | Gas inlet member of a cvd reactor |
| CN104060238A (en)* | 2013-03-22 | 2014-09-24 | 灿美工程股份有限公司 | Liner Assembly And Substrate Processing Apparatus Having Same |
| US20140283746A1 (en)* | 2013-03-22 | 2014-09-25 | Charm Engineering Co., Ltd. | Liner assembly and substrate processing apparatus having the same |
| CN220450290U (en)* | 2022-11-16 | 2024-02-06 | 鹏城微纳技术(沈阳)有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating equipment |
| Publication | Publication Date | Title |
|---|---|---|
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