CN115763349A - Light-emitting panel - Google Patents

Abstract

Translated fromChinese

本发明公开一种发光面板，其包括暂存基板、支撑图案层、粘着图案层及多个发光元件。支撑图案层设置于暂存基板上且具有多个开口。粘着图案层设置于支撑图案层上且具有多个开口。粘着图案层的多个开口分别重叠于支撑图案层的多个开口。多个发光元件分别设置于粘着图案层的多个开口。每一发光元件包括第一半导体层、第二半导体层、设置于第一半导体层与第二半导体层之间的主动层及分别电连接至第一半导体层及第二半导体层的多个电极，多个电极位于主动层与暂存基板之间，且多个电极与暂存基板之间存在空气间隙。此外，其他的多种发光面板也被提出。

The invention discloses a light-emitting panel, which includes a temporary storage substrate, a supporting pattern layer, an adhesive pattern layer and a plurality of light-emitting elements. The supporting pattern layer is disposed on the temporary storage substrate and has a plurality of openings. The adhesive pattern layer is disposed on the supporting pattern layer and has a plurality of openings. The multiple openings of the adhesive pattern layer are respectively overlapped with the multiple openings of the supporting pattern layer. A plurality of light emitting elements are respectively arranged in a plurality of openings of the adhesive pattern layer. Each light-emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, A plurality of electrodes are located between the active layer and the temporary storage substrate, and there is an air gap between the plurality of electrodes and the temporary storage substrate. In addition, other various light-emitting panels have also been proposed.

Description

Translated fromChinese

发光面板Luminous panel

技术领域technical field

本发明涉及一种发光面板。The invention relates to a light-emitting panel.

背景技术Background technique

发光二极管显示面板包括驱动背板及转置于驱动背板上的多个发光二极管元件。继承发光二极管的特性，发光二极管显示面板具有省电、高效率、高亮度及反应时间快等优点。此外，相较于有机发光二极管显示面板，发光二极管显示面板还具有色彩易调校、发光寿命长、无影像烙印等优势。因此，发光二极管显示面板被视为下一世代的显示技术。The light emitting diode display panel includes a driving backplane and a plurality of light emitting diode elements transposed on the driving backplane. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have advantages such as easy color adjustment, long luminous life, and no image burn-in. Therefore, LED display panels are regarded as the next generation display technology.

在发光二极管显示面板的制造过程中，需将暂存基板上的多个发光二极管元件巨量转移至驱动背板，且使发光二极管元件的电极与驱动背板的接垫电连接。在巨量转移多个发光二极管元件至驱动背板前，需清除发光二极管元件上的粘着结构，以露出发光二极管元件的电极。然而，粘着结构易残留在发光二极管元件上，进而造成发光二极管元件与驱动背板的接合不良。若为了清除干净粘着结构而使用较严苛的干式蚀刻制作工艺条件，则会使得发光二极管元件在干式蚀刻制作工艺受损而出现裂缝。During the manufacturing process of the LED display panel, it is necessary to transfer a large number of LED elements on the temporary storage substrate to the driving backplane, and electrically connect the electrodes of the LED elements to the pads of the driving backplane. Before mass transferring a plurality of LED elements to the driving backplane, it is necessary to remove the adhesive structure on the LED elements to expose the electrodes of the LED elements. However, the adhesive structure is likely to remain on the LED element, and then cause poor bonding between the LED element and the driving backplane. If harsher dry etching process conditions are used to remove the adhesive structure, the light emitting diode element will be damaged and cracks will appear during the dry etching process.

发明内容Contents of the invention

本发明提供一种发光面板，制造良率高。The invention provides a light-emitting panel with high manufacturing yield.

本发明提供另一种发光面板，制造良率高。The invention provides another light-emitting panel with high manufacturing yield.

本发明提供又一种发光面板，制造良率高。The invention provides another light-emitting panel with high manufacturing yield.

本发明一实施例的发光面板包括暂存基板、支撑图案层、粘着图案层以及多个发光元件。支撑图案层设置于暂存基板上且具有多个开口。粘着图案层设置于支撑图案层上且具有多个开口。粘着图案层的多个开口分别重叠于支撑图案层的多个开口。多个发光元件分别设置于粘着图案层的多个开口。每一发光元件包括第一半导体层、第二半导体层、设置于第一半导体层与第二半导体层之间的主动(有源)层以及分别电连接至第一半导体层及第二半导体层的多个电极，多个电极位于主动层与暂存基板之间，且多个电极与暂存基板之间存在空气间隙。A light-emitting panel according to an embodiment of the present invention includes a temporary storage substrate, a supporting pattern layer, an adhesive pattern layer, and a plurality of light-emitting elements. The supporting pattern layer is disposed on the temporary storage substrate and has a plurality of openings. The adhesive pattern layer is disposed on the supporting pattern layer and has a plurality of openings. The multiple openings of the adhesive pattern layer are respectively overlapped with the multiple openings of the supporting pattern layer. A plurality of light emitting elements are respectively arranged in a plurality of openings of the adhesive pattern layer. Each light-emitting element includes a first semiconductor layer, a second semiconductor layer, an active (active) layer disposed between the first semiconductor layer and the second semiconductor layer, and a layer electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. A plurality of electrodes, the plurality of electrodes are located between the active layer and the temporary storage substrate, and there is an air gap between the plurality of electrodes and the temporary storage substrate.

本发明另一实施例的发光面板包括暂存基板、粘着层、多个发光元件以及多个粘着图案。粘着层设置于暂存基板上。多个发光元件设置于粘着层上。多个粘着图案彼此分离且分别设置于多个发光元件上。每一发光元件包括第一半导体层、第二半导体层、设置于第一半导体层与第二半导体层之间的主动层以及分别电连接至第一半导体层及第二半导体层的多个电极，主动层位于多个电极与多个粘着图案的一者之间，每一粘着图案具有开口，且开口重叠于多个发光元件之一者的多个电极。A light-emitting panel according to another embodiment of the present invention includes a temporary storage substrate, an adhesive layer, a plurality of light-emitting elements, and a plurality of adhesive patterns. The adhesive layer is disposed on the temporary storage substrate. A plurality of light emitting elements are arranged on the adhesive layer. A plurality of adhesive patterns are separated from each other and respectively disposed on a plurality of light emitting elements. Each light-emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, The active layer is located between the plurality of electrodes and one of the plurality of adhesive patterns, each adhesive pattern has an opening, and the opening overlaps the plurality of electrodes of one of the plurality of light emitting elements.

本发明又一实施例的发光面板包括驱动背板、多个发光元件以及多个粘着图案。驱动背板具有多个接垫组。每一发光元件包括第一半导体层、第二半导体层、设置于第一半导体层与第二半导体层之间的主动层以及分别电连接至第一半导体层及第二半导体层的多个电极，且多个发光元件的多个电极电连接至驱动背板的多个接垫组。多个粘着图案彼此分离，分别设置于多个发光元件上，且位于多个发光元件与驱动背板之间。每一粘着图案具有开口，且开口重叠于多个发光元件的一者的多个电极。The light-emitting panel according to another embodiment of the present invention includes a driving backplane, a plurality of light-emitting elements, and a plurality of adhesive patterns. The drive backplane has multiple pad sets. Each light-emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, And the plurality of electrodes of the plurality of light-emitting elements are electrically connected to the plurality of pad groups of the driving backplane. The plurality of adhesive patterns are separated from each other, respectively disposed on the plurality of light-emitting elements, and located between the plurality of light-emitting elements and the driving backplane. Each adhesive pattern has an opening, and the opening overlaps a plurality of electrodes of one of the plurality of light emitting elements.

附图说明Description of drawings

图1A至图1G为本发明一实施例的发光面板的制造流程的剖面示意图；1A to 1G are schematic cross-sectional views of a manufacturing process of a light-emitting panel according to an embodiment of the present invention;

图2A至图2D为本发明一实施例的支撑图案层及粘着图案层的制造流程的剖面示意图；2A to 2D are schematic cross-sectional views of the manufacturing process of the supporting pattern layer and the adhesive pattern layer according to an embodiment of the present invention;

图3为本发明一实施例的发光元件、粘着图案层及支撑图案层的俯视示意图；3 is a schematic top view of a light emitting element, an adhesive pattern layer and a supporting pattern layer according to an embodiment of the present invention;

图4为本发明一实施例的掩模的俯视示意图。FIG. 4 is a schematic top view of a mask according to an embodiment of the present invention.

符号说明Symbol Description

10-1、10-2、10-3:发光面板10-1, 10-2, 10-3: Luminous panels

110、400:暂存基板110, 400: Temporary storage substrate

120:支撑图案层120: support pattern layer

120’:支撑材料层120': support material layer

122、132:实体122, 132: entity

122’:第一区122':District 1

122s、132s、360s:侧壁122s, 132s, 360s: side wall

124、134:开口124, 134: opening

124’:第二区124': Second District

130:粘着图案层130: Adhesive pattern layer

130’:粘着材料层130': Adhesive material layer

132a:锚部132a: anchor portion

132b:系部132b: Department

136:粘着图案136: Adhesive pattern

200:生长基板200: Growth substrate

300:发光元件300: light emitting element

310:第一半导体层310: the first semiconductor layer

320:第二半导体层320: the second semiconductor layer

330:主动(有源)层330: active (active) layer

340、350:电极340, 350: electrode

350a、360a:外表面350a, 360a: outer surface

360:外延层360: epitaxial layer

360s、Sa:侧壁360s, Sa: side wall

360s-1、371:第一部分360s-1, 371: Part I

360s-2、373:第二部分360s-2, 373: Part Two

370:绝缘层370: insulating layer

372、374:接触窗372, 374: contact window

500:粘着层500: Adhesive layer

600:驱动背板600: Drive backplane

610:接垫组610: Pad set

612、614:接垫612, 614: Pads

AG:空气间隙AG: air gap

H1:最大高度H1: maximum height

H2:最大厚度H2: maximum thickness

L1、L2、L3:激光L1, L2, L3: Laser

M:掩模M: mask

Ma:遮光部Ma: shading part

Mb:透光部Mb: Translucent part

S:半导体结构S: Semiconductor structure

I:交界I: Junction

z:方向z: direction

具体实施方式Detailed ways

现将详细地参考本发明的示范性实施例，示范性实施例的实例说明于附图中。只要有可能，相同元件符号在附图和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

应当理解，当诸如层、膜、区域或基板的元件被称为在另一元件“上”或“连接到”另一元件时，其可以直接在另一元件上或与另一元件连接，或者中间元件可以也存在。相反，当元件被称为“直接在另一元件上”或“直接连接到”另一元件时，不存在中间元件。如本文所使用的，“连接”可以指物理及/或电连接。再者，“电连接”或“耦合”可以是两元件间存在其它元件。It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

本文使用的“约”、“近似”、或“实质上”包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值，考虑到所讨论的测量和与测量相关的误差的特定数量(即，测量系统的限制)。例如，“约”可以表示在所述值的一个或多个标准偏差内，或±30％、±20％、±10％、±5％内。再者，本文使用的“约”、“近似”或“实质上”可依光学性质、蚀刻性质或其它性质，来选择较可接受的偏差范围或标准偏差，而可不用一个标准偏差适用全部性质。As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .

除非另有定义，本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是，诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义，并且将不被解释为理想化的或过度正式的意义，除非本文中明确地这样定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

图1A至图1G为本发明一实施例的发光面板的制造流程的剖面示意图。1A to 1G are schematic cross-sectional views of a manufacturing process of a light-emitting panel according to an embodiment of the present invention.

请参照图1A，首先，提供暂存基板110、支撑图案层120及粘着图案层130。支撑图案层120设置于暂存基板110上且具有多个开口124。粘着图案层130设置于支撑图案层120上且具有多个开口134。粘着图案层130的多个开口134分别重叠于支撑图案层120的多个开口124。Referring to FIG. 1A , firstly, atemporary storage substrate 110 , a supportingpattern layer 120 and anadhesive pattern layer 130 are provided. The supportingpattern layer 120 is disposed on thetemporary storage substrate 110 and has a plurality ofopenings 124 . Theadhesive pattern layer 130 is disposed on the supportingpattern layer 120 and has a plurality ofopenings 134 . The plurality ofopenings 134 of theadhesive pattern layer 130 are respectively overlapped with the plurality ofopenings 124 of the supportingpattern layer 120 .

详细而言，在本实施例中，支撑图案层120具有实体122，实体122的侧壁122s定义支撑图案层120的开口124；粘着图案层130具有实体132，实体132的侧壁132s定义粘着图案层130的开口134；粘着图案层130的实体132设置于支撑图案层120的实体122上且略微超出支撑图案层120的实体122，且粘着图案层130的开口134略小于支撑图案层120的开口124。In detail, in this embodiment, thesupport pattern layer 120 has a solid 122, and thesidewall 122s of the solid 122 defines theopening 124 of thesupport pattern layer 120; theadhesive pattern layer 130 has a solid 132, and thesidewall 132s of the solid 132 defines an adhesive pattern Theopening 134 of thelayer 130; theentity 132 of theadhesive pattern layer 130 is arranged on theentity 122 of thesupport pattern layer 120 and slightly exceeds theentity 122 of thesupport pattern layer 120, and theopening 134 of theadhesion pattern layer 130 is slightly smaller than the opening of thesupport pattern layer 120 124.

从另一角度而言，在本实施例中，粘着图案层130的实体132包括锚部132a及多个系部132b，锚部132a与系部132b的交界I实质上切齐于支撑图案层120的侧壁122s，锚部132a固定于支撑图案层120的实体122上，多个系部132b连接于锚部132a且分别悬挂于支撑图案层120的多个开口124上。举例而言，在本实施例中，粘着图案层130的系部132b可为重叠于支撑图案层120的开口124周边的环状粘着图案，但本发明不以此为限。From another point of view, in this embodiment, theentity 132 of theadhesive pattern layer 130 includes ananchor portion 132a and a plurality oftie portions 132b, and the junction I between theanchor portion 132a and thetie portion 132b is substantially aligned with the supportingpattern layer 120. Thesidewall 122s, theanchor portion 132a is fixed on theentity 122 of the supportingpattern layer 120, and the plurality oftie portions 132b are connected to theanchor portion 132a and are respectively hung on the plurality ofopenings 124 of the supportingpattern layer 120. For example, in this embodiment, thetie portion 132b of theadhesive pattern layer 130 can be a ring-shaped adhesive pattern overlapping the periphery of theopening 124 of the supportingpattern layer 120 , but the invention is not limited thereto.

图2A至图2D为本发明一实施例的支撑图案层及粘着图案层的制造流程的剖面示意图。以下搭配图2A至图2D举例说明本发明一实施例的支撑图案层120及粘着图案层130的制造过程。2A to 2D are schematic cross-sectional views of the manufacturing process of the supporting pattern layer and the adhesive pattern layer according to an embodiment of the present invention. The manufacturing process of the supportingpattern layer 120 and theadhesive pattern layer 130 according to an embodiment of the present invention will be illustrated below with reference to FIG. 2A to FIG. 2D .

请参照图2A，首先，提供暂存基板110。举例而言，在本实施例中，暂存基板110可为蓝宝石基板，但本发明不以此为限。接着，在暂存基板110上形成支撑材料层120’，其中支撑材料层120’具有一第一区122’及多个第二区124’，且每一第二区124’被第一区122’围绕。Referring to FIG. 2A , firstly, atemporary storage substrate 110 is provided. For example, in this embodiment, thetemporary storage substrate 110 may be a sapphire substrate, but the present invention is not limited thereto. Next, a support material layer 120' is formed on thetemporary storage substrate 110, wherein the support material layer 120' has a first region 122' and a plurality of second regions 124', and each second region 124' is covered by the first region 122 'around.

请参照图2B，接着，在支撑材料层120’上形成粘着材料层130’。粘着材料层130’整面性覆盖支撑材料层120’。请参照图2B及图2C，接着，图案化粘着材料层130’，以形成粘着图案层130。粘着图案层130的实体132的锚部132a设置于支撑材料层120’的第一区122’上。粘着图案层130的实体132的多个系部132b连接于锚部132a且分别设置于支撑材料层120’的多个第二区124’的周边上。粘着图案层130具有多个开口134，分别重叠于支撑材料层120’的多个第二区124’。在本实施例中，可使用光刻制作工艺图案化粘着材料层130’，但本发明不以此为限。Referring to FIG. 2B, next, an adhesive material layer 130' is formed on the support material layer 120'. The adhesive material layer 130' completely covers the supporting material layer 120'. Referring to FIG. 2B and FIG. 2C , next, the adhesive material layer 130' is patterned to form theadhesive pattern layer 130. Theanchor portion 132a of theentity 132 of theadhesive pattern layer 130 is disposed on the first region 122' of the supporting material layer 120'. The plurality oftie portions 132b of theentity 132 of theadhesive pattern layer 130 are connected to theanchor portion 132a and are respectively disposed on the periphery of the plurality of second regions 124' of the supporting material layer 120'. Theadhesive pattern layer 130 has a plurality ofopenings 134 respectively overlapping the plurality of second regions 124' of the supporting material layer 120'. In this embodiment, the adhesive material layer 130' can be patterned by a photolithography process, but the invention is not limited thereto.

请参照图2C及图2D，接着，移除支撑材料层120’的多个第二区124’并保留第一区122’，以形成支撑图案层120，其中支撑材料层120’的多个第二区124’被移除后形成支撑图案层120的多个开口124，而被保留的支撑材料层120’的第一区122’则形成支撑图案层120的实体122。Please refer to FIG. 2C and FIG. 2D, then, remove the plurality of second regions 124' of the support material layer 120' and retain the first region 122' to form thesupport pattern layer 120, wherein the plurality of second regions 124' of the support material layer 120' Thesecond region 124 ′ is removed to form a plurality ofopenings 124 supporting thepattern layer 120 , while the retainedfirst region 122 ′ of the supportingmaterial layer 120 ′ forms theentity 122 supporting thepattern layer 120 .

在本实施例中，可选择性地使用湿式蚀刻制作工艺图案化支撑材料层120’，以形成支撑图案层120，其中支撑材料层120’的第一区122’与第二区124’的材质性质不同，而湿式蚀刻制作工艺所使用的蚀刻液会侵蚀第二区124’但不易侵蚀第一区122’。举例而言，在本实施例中，支撑材料层120’的第一区122’的材质可为硅(111)，而支撑材料层120’的第二区124’的材质可为硅(110)，但本发明不以此为限。In this embodiment, the support material layer 120' can be selectively patterned using a wet etching process to form thesupport pattern layer 120, wherein the material of the first region 122' and the second region 124' of the support material layer 120' The properties are different, and the etchant used in the wet etching process will corrode the second region 124' but not easily corrode the first region 122'. For example, in this embodiment, the material of the first region 122' of the supporting material layer 120' can be silicon (111), and the material of the second region 124' of the supporting material layer 120' can be silicon (110). , but the present invention is not limited thereto.

请参照图1A，接着，提供生长基板200及形成于生长基板200上的多个发光元件300。每一发光元件300包括第一半导体层310、第二半导体层320、设置于第一半导体层310与第二半导体层320之间的主动层330以及分别电连接至第一半导体层310及第二半导体层320的多个电极340、350。Referring to FIG. 1A , next, agrowth substrate 200 and a plurality oflight emitting elements 300 formed on thegrowth substrate 200 are provided. Each light-emittingelement 300 includes afirst semiconductor layer 310, asecond semiconductor layer 320, anactive layer 330 disposed between thefirst semiconductor layer 310 and thesecond semiconductor layer 320, and electrically connected to thefirst semiconductor layer 310 and thesecond semiconductor layer 310, respectively. A plurality ofelectrodes 340 , 350 of thesemiconductor layer 320 .

在本实施例中，每一发光元件300还可选择性地包括外延层360，第一半导体层310形成在外延层360上，外延层360位于生长基板200与第一半导体层310之间，且第一半导体层310位于外延层360与主动层330之间。举例而言，在本实施例中，生长基板200可为蓝宝石，外延层360可为未掺杂的氮化镓，第一半导体层310可为n型的氮化镓，主动层330可为多重量子井层，第二半导体层320可为p型的氮化镓，但本发明不以此为限。In this embodiment, eachlight emitting element 300 may also optionally include anepitaxial layer 360, thefirst semiconductor layer 310 is formed on theepitaxial layer 360, theepitaxial layer 360 is located between thegrowth substrate 200 and thefirst semiconductor layer 310, and Thefirst semiconductor layer 310 is located between theepitaxial layer 360 and theactive layer 330 . For example, in this embodiment, thegrowth substrate 200 can be sapphire, theepitaxial layer 360 can be undoped gallium nitride, thefirst semiconductor layer 310 can be n-type gallium nitride, and theactive layer 330 can be multiple The quantum well layer, thesecond semiconductor layer 320 can be p-type gallium nitride, but the present invention is not limited thereto.

在本实施例中，每一发光元件300还可包括绝缘层370，绝缘层370设置于第二半导体层320上且具有分别重叠于第一半导体层310与第二半导体层320的多个接触窗372、374，多个电极340、350通过绝缘层370的多个接触窗372、374分别电连接至第一半导体层310及第二半导体层320。In this embodiment, eachlight emitting element 300 may further include an insulatinglayer 370, the insulatinglayer 370 is disposed on thesecond semiconductor layer 320 and has a plurality of contact windows overlapping thefirst semiconductor layer 310 and thesecond semiconductor layer 320 respectively. 372 , 374 , themultiple electrodes 340 , 350 are electrically connected to thefirst semiconductor layer 310 and thesecond semiconductor layer 320 respectively through themultiple contact windows 372 , 374 of the insulatinglayer 370 .

图3为本发明一实施例的发光元件、粘着图案层及支撑图案层的俯视示意图。图3的发光元件300、粘着图案层130及支撑图案层120可对应图1A的发光元件300、粘着图案层130及支撑图案层120。FIG. 3 is a schematic top view of a light emitting element, an adhesive pattern layer and a supporting pattern layer according to an embodiment of the present invention. Thelight emitting device 300 , theadhesive pattern layer 130 and the supportingpattern layer 120 in FIG. 3 may correspond to thelight emitting device 300 , theadhesive pattern layer 130 and the supportingpattern layer 120 in FIG. 1A .

请参照图1A至图1C及图3，接着，将发光元件300从生长基板200上转置于暂存基板110的粘着图案层130上，以形成发光面板10-1。请参照图1A、图1B及图3，详细而言，可先将多个发光元件300分别设置于粘着图案层130的多个开口134上，以使多个发光元件300分别与粘着图案层130的多个锚部132a连接；请参照图1B及图1C，然后，再使多个发光元件300与生长基板200分离。举例而言，在本实施例中，可使用激光剥离工序使发光元件300与生长基板200分离；激光剥离工序所使用的激光L1的中心波长例如是266nm；但本发明不以此为限。Referring to FIG. 1A to FIG. 1C and FIG. 3 , then, thelight emitting device 300 is transferred from thegrowth substrate 200 to theadhesive pattern layer 130 of thetemporary storage substrate 110 to form the light emitting panel 10 - 1 . Please refer to FIG. 1A, FIG. 1B and FIG. 3, in detail, a plurality of light-emittingelements 300 can be respectively arranged on the plurality ofopenings 134 of theadhesive pattern layer 130, so that the plurality of light-emittingelements 300 are respectively connected to theadhesive pattern layer 130. A plurality ofanchor portions 132a are connected; please refer to FIG. 1B and FIG. 1C , and then, a plurality oflight emitting elements 300 are separated from thegrowth substrate 200 . For example, in this embodiment, a laser lift-off process can be used to separate the light-emittingelement 300 from thegrowth substrate 200; the central wavelength of the laser light L1 used in the laser lift-off process is, for example, 266 nm; but the present invention is not limited thereto.

请参照图1C，发光面板10-1除了包括前述的暂存基板110、支撑图案层120及粘着图案层130外，发光面板10-1还包括分别设置于粘着图案层130的多个开口134的多个发光元件300，其中每一发光元件300的多个电极340、350位于主动层330与暂存基板110之间。特别是，发光元件300的多个电极340、350与暂存基板110之间存在空气间隙AG。也就是说，发光元件300是粘在粘着图案层130的系部132b上而悬挂在支撑图案层120的开口124上。粘着图案层130的系部132b连接于发光元件300与粘着图案层130的锚部132a之间。在本实施例中，粘着图案层130的系部132b可环绕发光元件300的多个电极340、350。Please refer to FIG. 1C. In addition to the aforementionedtemporary storage substrate 110,support pattern layer 120, andadhesive pattern layer 130, the light-emitting panel 10-1 also includes a plurality ofopenings 134 respectively disposed on theadhesive pattern layer 130. A plurality oflight emitting elements 300 , wherein the plurality ofelectrodes 340 , 350 of each light emittingelement 300 are located between theactive layer 330 and thetemporary storage substrate 110 . In particular, an air gap AG exists between the plurality ofelectrodes 340 and 350 of thelight emitting element 300 and thetemporary storage substrate 110 . That is to say, thelight emitting element 300 is stuck on thetie part 132 b of theadhesive pattern layer 130 and suspended on theopening 124 of the supportingpattern layer 120 . Thetie portion 132b of theadhesive pattern layer 130 is connected between the light emittingelement 300 and theanchor portion 132a of theadhesive pattern layer 130 . In this embodiment, thetie portion 132 b of theadhesive pattern layer 130 can surround the plurality ofelectrodes 340 , 350 of thelight emitting element 300 .

在本实施例中，每一发光元件300的多个电极340、350接触于空气间隙AG。也就是说，每一发光元件300的多个电极340、350是被裸露于粘着图案层130外。在本实施例中，每一发光元件300的绝缘层370包括第一部分371，绝缘层370的第一部分371设置于第二半导体层320上且位于多个电极340、350之间，且绝缘层370的第一部分371可接触于空气间隙AG。在本实施例中，每一发光元件300的绝缘层370还包括第二部分373，第一半导体层310、主动层330及第二半导体层320堆叠成半导体结构S，绝缘层370的第二部分373设置于半导体结构S的侧壁Sa上，且绝缘层370的第二部分373接触于粘着图案层130。In this embodiment, theelectrodes 340 and 350 of each light emittingelement 300 are in contact with the air gap AG. That is to say, the plurality ofelectrodes 340 , 350 of each light emittingelement 300 are exposed outside theadhesive pattern layer 130 . In this embodiment, the insulatinglayer 370 of each light emittingelement 300 includes afirst portion 371, thefirst portion 371 of the insulatinglayer 370 is disposed on thesecond semiconductor layer 320 and is located between the plurality ofelectrodes 340, 350, and the insulatinglayer 370 Thefirst portion 371 of may be in contact with the air gap AG. In this embodiment, the insulatinglayer 370 of each light emittingelement 300 further includes asecond portion 373, thefirst semiconductor layer 310, theactive layer 330 and thesecond semiconductor layer 320 are stacked to form a semiconductor structure S, and the second portion of the insulatinglayer 370 373 is disposed on the sidewall Sa of the semiconductor structure S, and thesecond portion 373 of the insulatinglayer 370 is in contact with theadhesive pattern layer 130 .

在本实施例中，每一发光元件300的外延层360的侧壁360s包括第一部分360s-1及第二部分360s-2，其中外延层360的侧壁360s的第一部分360s-1位于外延层360的侧壁360s的第二部分360s-2与暂存基板110之间。在本实施例中，外延层360的侧壁360s的第一部分360s-1接触于粘着图案层130，而外延层360的侧壁360s的第二部分360s-2则凸出于粘着图案层130外。In this embodiment, thesidewall 360s of theepitaxial layer 360 of each light emittingelement 300 includes afirst portion 360s-1 and asecond portion 360s-2, wherein thefirst portion 360s-1 of thesidewall 360s of theepitaxial layer 360 is located in the epitaxial layer between thesecond portion 360s - 2 of thesidewall 360s of the 360 and thetemporary storage substrate 110 . In this embodiment, thefirst part 360s-1 of thesidewall 360s of theepitaxial layer 360 is in contact with theadhesive pattern layer 130, and thesecond part 360s-2 of thesidewall 360s of theepitaxial layer 360 protrudes from theadhesive pattern layer 130. .

在本实施例中，每一发光元件300在垂直于暂存基板110的方向z上具有最大高度H1，接触于发光元件300的粘着图案层130在垂直于暂存基板110的方向z上具有最大厚度H2，且0.06≤(H2/H1)≤0.83。在本实施例中，每一发光元件300的最大高度H1可指外延层360的背向暂存基板110的外表面360a到电极350的面向暂存基板110的外表面350a的距离。在本实施例中，粘着图案层130的最大厚度H2可指设置于绝缘层370的第二部分373及外延层360的侧壁360s的第一部分360s-1上的粘着图案层130的厚度。In this embodiment, eachlight emitting element 300 has a maximum height H1 in the direction z perpendicular to thetemporary storage substrate 110, and theadhesive pattern layer 130 contacting thelight emitting element 300 has a maximum height H1 in the direction z perpendicular to thetemporary storage substrate 110. Thickness H2, and 0.06≤(H2/H1)≤0.83. In this embodiment, the maximum height H1 of each light emittingelement 300 may refer to the distance from theouter surface 360 a of theepitaxial layer 360 facing away from thetemporary storage substrate 110 to theouter surface 350 a of theelectrode 350 facing thetemporary storage substrate 110 . In this embodiment, the maximum thickness H2 of theadhesive pattern layer 130 may refer to the thickness of theadhesive pattern layer 130 disposed on thesecond portion 373 of the insulatinglayer 370 and thefirst portion 360 s - 1 of thesidewall 360 s of theepitaxial layer 360 .

请参照图1D，接着，提供另一暂存基板400及设置于暂存基板400上的粘着层500。在本实施例中，粘着层500可整面性地覆盖暂存基板400，但本发明不以此为限。请参照图1D及图1E，接着，将暂存基板110上的发光元件300转置于粘着层500上，以形成另一发光面板10-2。Referring to FIG. 1D , next, anothertemporary storage substrate 400 and anadhesive layer 500 disposed on thetemporary storage substrate 400 are provided. In this embodiment, theadhesive layer 500 can completely cover thetemporary storage substrate 400 , but the invention is not limited thereto. Referring to FIG. 1D and FIG. 1E , then, thelight emitting element 300 on thetemporary storage substrate 110 is transferred onto theadhesive layer 500 to form another light emitting panel 10 - 2 .

图4为本发明一实施例的掩模的俯视示意图。请参照图1D、图1E、图3及图4，在本实施例中，可将掩模M设置于激光L2传向粘着图案层130的路径上，掩模M具有遮光部Ma及遮光部Ma外的透光部Mb，激光L2穿过掩模M的透光部Mb而照射粘着图案层130的锚部132a与系部132b的交界I，以使系部132b与锚部132a分离。系部132b与锚部132a分离后，系部132b及与系部132b连接的发光元件300便可被转置于粘着层500上，其中与锚部132a分离的粘着图案层130的系部132b形成发光面板10-2的粘着图案136。FIG. 4 is a schematic top view of a mask according to an embodiment of the present invention. Please refer to FIG. 1D, FIG. 1E, FIG. 3 and FIG. 4. In this embodiment, a mask M can be arranged on the path where the laser light L2 passes to theadhesive pattern layer 130. The mask M has a light-shielding portion Ma and a light-shielding portion Ma. In the outer light-transmitting portion Mb, the laser L2 passes through the light-transmitting portion Mb of the mask M to irradiate the junction I between theanchor portion 132a and thetie portion 132b of theadhesive pattern layer 130, so that thetie portion 132b is separated from theanchor portion 132a. After thetie part 132b is separated from theanchor part 132a, thetie part 132b and the light-emittingelement 300 connected to thetie part 132b can be transferred to theadhesive layer 500, wherein thetie part 132b of theadhesive pattern layer 130 separated from theanchor part 132a formsAdhesive pattern 136 of light emitting panel 10-2.

在本实施例中，在利用激光L2分离锚部132a与系部132b时，掩模M的遮光部Ma可遮蔽发光元件300，避免激光L2损伤发光元件300。在本实施例中，激光L2的中心波长例如是248nm，但本发明不以此为限。In this embodiment, when theanchor portion 132a and thetie portion 132b are separated by the laser L2, the light-shielding portion Ma of the mask M can shield the light-emittingelement 300 to prevent the laser L2 from damaging the light-emittingelement 300 . In this embodiment, the central wavelength of the laser light L2 is, for example, 248 nm, but the present invention is not limited thereto.

请参照图1E，发光面板10-2包括暂存基板400、设置于暂存基板400上的粘着层500、设置于粘着层500上的多个发光元件300以及彼此分离且分别设置于多个发光元件300上的多个粘着图案136。每一发光元件300的主动层330位于多个电极340、350与对应的一个粘着图案136之间。每一粘着图案136具有开口134，且开口134重叠于对应的一个发光元件300的多个电极340、350。Please refer to FIG. 1E , the light-emitting panel 10-2 includes atemporary storage substrate 400, anadhesive layer 500 disposed on thetemporary storage substrate 400, a plurality of light-emittingelements 300 disposed on theadhesive layer 500, and a plurality of light-emittingelements 300 that are separated from each other and respectively disposed on a plurality of light-emitting elements. A plurality ofadhesive patterns 136 on thecomponent 300 . Theactive layer 330 of each light emittingdevice 300 is located between the plurality ofelectrodes 340 , 350 and a correspondingadhesive pattern 136 . Eachadhesive pattern 136 has anopening 134 , and theopening 134 overlaps a plurality ofelectrodes 340 , 350 of a correspondinglight emitting device 300 .

在本实施例中，每一粘着图案136可环绕对应的一个发光元件300的多个电极340、350。在本实施例中，绝缘层370的第一部分371重叠于粘着图案136的开口134。在本实施例中，发光元件300的外延层360的侧壁360s的第一部分360s-1接触于粘着图案136，外延层360的侧壁360s的第二部分360s-2位于外延层360的侧壁360s的第一部分360s-1与暂存基板400之间，且外延层360的侧壁360s的第二部分360s-2凸出于粘着图案136外。In this embodiment, eachadhesive pattern 136 can surround a plurality ofelectrodes 340 , 350 of a correspondinglight emitting element 300 . In this embodiment, thefirst portion 371 of the insulatinglayer 370 overlaps theopening 134 of theadhesive pattern 136 . In this embodiment, thefirst part 360s-1 of thesidewall 360s of theepitaxial layer 360 of thelight emitting element 300 is in contact with theadhesive pattern 136, and thesecond part 360s-2 of thesidewall 360s of theepitaxial layer 360 is located on the sidewall of theepitaxial layer 360. Between thefirst portion 360s-1 of theepitaxial layer 360s and thetemporary storage substrate 400, thesecond portion 360s-2 of thesidewall 360s of theepitaxial layer 360 protrudes out of theadhesive pattern 136.

在本实施例中，每一发光元件300在垂直于暂存基板400的方向z上具有最大高度H1，接触于发光元件300的粘着图案136在垂直于暂存基板400的方向z上具有最大厚度H2，且0.06≤(H2/H1)≤0.83。在本实施例中，每一发光元件300的最大高度H1可指外延层360的面向暂存基板400的外表面360a到电极350的背向暂存基板400的外表面350a的距离。在本实施例中，粘着图案136的最大厚度H2可指设置于绝缘层370的第二部分373及外延层360的侧壁360s的第一部分360s-1上的粘着图案136的厚度。In this embodiment, each light-emittingelement 300 has a maximum height H1 in the direction z perpendicular to thetemporary storage substrate 400, and theadhesive pattern 136 contacting the light-emittingelement 300 has a maximum thickness in the direction z perpendicular to thetemporary storage substrate 400. H2, and 0.06≤(H2/H1)≤0.83. In this embodiment, the maximum height H1 of each light emittingelement 300 may refer to the distance from theouter surface 360 a of theepitaxial layer 360 facing thetemporary storage substrate 400 to theouter surface 350 a of theelectrode 350 facing away from thetemporary storage substrate 400 . In this embodiment, the maximum thickness H2 of theadhesive pattern 136 may refer to the thickness of theadhesive pattern 136 disposed on thesecond portion 373 of the insulatinglayer 370 and thefirst portion 360 s - 1 of thesidewall 360 s of theepitaxial layer 360 .

请参照图1F及图1G，接着，将暂存基板400上的多个发光元件300转置于驱动背板600上，且使多个发光元件300的多个电极340、350电连接至驱动背板600的多个接垫组610，以形成发光面板10-3。接垫组610包括多个接垫612、614，与多个发光元件300的多个电极340、350电连接。在本实施例中，可使用激光接合工序电连接发光元件300的电极340、350与接垫612、614。举例而言，在本实施例中，激光接合工序所使用的激光L3的中心波长可为1064nm，但本发明不以此为限。Please refer to FIG. 1F and FIG. 1G , and then, the plurality of light-emittingelements 300 on thetemporary storage substrate 400 are transferred to the drivingbackplane 600, and the plurality ofelectrodes 340, 350 of the plurality of light-emittingelements 300 are electrically connected to the driving backplane. A plurality ofpad groups 610 of theboard 600 to form the light emitting panel 10-3. The pad set 610 includes a plurality ofpads 612 , 614 electrically connected to theelectrodes 340 , 350 of thelight emitting elements 300 . In this embodiment, theelectrodes 340 , 350 of thelight emitting device 300 and thepads 612 , 614 can be electrically connected by using a laser bonding process. For example, in this embodiment, the central wavelength of the laser L3 used in the laser bonding process may be 1064 nm, but the present invention is not limited thereto.

请参照图1G，发光面板10-3包括驱动背板600、多个发光元件300及多个粘着图案136。驱动背板600具有多个接垫组610。多个发光元件300的多个电极340、350电连接至驱动背板600的多个接垫组610。多个粘着图案136彼此分离，分别设置于多个发光元件300上，且位于多个发光元件300与驱动背板600之间。每一粘着图案136具有开口134，且开口134重叠于对应的一个发光元件300的多个电极340、350。Referring to FIG. 1G , the light emitting panel 10 - 3 includes a drivingbackplane 600 , a plurality oflight emitting elements 300 and a plurality ofadhesive patterns 136 . The drivingbackplane 600 has a plurality of pad sets 610 . The plurality ofelectrodes 340 , 350 of the plurality oflight emitting elements 300 are electrically connected to the plurality ofpad groups 610 of the drivingbackplane 600 . The plurality ofadhesive patterns 136 are separated from each other, respectively disposed on the plurality oflight emitting elements 300 , and located between the plurality oflight emitting elements 300 and the drivingbackplane 600 . Eachadhesive pattern 136 has anopening 134 , and theopening 134 overlaps a plurality ofelectrodes 340 , 350 of a correspondinglight emitting device 300 .

在本实施例中，每一发光元件300在垂直于驱动背板600的方向z上具有最大高度H1，接触于发光元件300的粘着图案136在垂直于驱动背板600的方向z上具有最大厚度H2，且0.06≤(H2/H1)≤0.83。在本实施例中，每一发光元件300的最大高度H1可指外延层360的背面向驱动背板600的外表面360a到电极350的面向驱动背板600的外表面350a的距离。在本实施例中，粘着图案136的最大厚度H2可指设置于绝缘层370的第二部分373及外延层360的侧壁360s的第一部分360s-1上的粘着图案136的厚度。In this embodiment, each light-emittingelement 300 has a maximum height H1 in the direction z perpendicular to the drivingbackplane 600, and theadhesive pattern 136 in contact with the light-emittingelement 300 has a maximum thickness in the direction z perpendicular to the drivingbackplane 600. H2, and 0.06≤(H2/H1)≤0.83. In this embodiment, the maximum height H1 of each light emittingelement 300 may refer to the distance from theouter surface 360 a of theepitaxial layer 360 facing the drivingbackplane 600 to theouter surface 350 a of theelectrode 350 facing the drivingbackplane 600 . In this embodiment, the maximum thickness H2 of theadhesive pattern 136 may refer to the thickness of theadhesive pattern 136 disposed on thesecond portion 373 of the insulatinglayer 370 and thefirst portion 360 s - 1 of thesidewall 360 s of theepitaxial layer 360 .

值得一提的是，如图1C所示，发光元件300的电极340、350与暂存基板110之间存在空气间隙AG。也就是说，发光元件300是悬挂在粘着图案层130的系部132b上，而发光元件300的电极340、350不被粘着图案层130所覆盖。因此，如图1C至图1E所示，当发光元件300被转置于另一暂存基板400上时，粘着图案层130不会残留在发光元件300的电极340、350上。如图1E至图1G所示，即使，选择性地不去除设置于发光元件300周边的粘着图案136，发光元件300的电极340、350仍会被裸露，进而能良好地与驱动背板600的接垫612、614接合。由此，发光面板10-3的制造良率可显著提升。It is worth mentioning that, as shown in FIG. 1C , there is an air gap AG between theelectrodes 340 and 350 of thelight emitting element 300 and thetemporary storage substrate 110 . That is to say, thelight emitting element 300 is suspended on thetie portion 132 b of theadhesive pattern layer 130 , and theelectrodes 340 , 350 of thelight emitting element 300 are not covered by theadhesive pattern layer 130 . Therefore, as shown in FIGS. 1C to 1E , when thelight emitting device 300 is transferred to anothertemporary storage substrate 400 , theadhesive pattern layer 130 will not remain on theelectrodes 340 , 350 of thelight emitting device 300 . As shown in FIG. 1E to FIG. 1G , even if theadhesive pattern 136 disposed on the periphery of thelight emitting element 300 is not selectively removed, theelectrodes 340 and 350 of thelight emitting element 300 will still be exposed, so that they can be well connected with the drivingbackplane 600. Thepads 612, 614 are bonded. Thus, the manufacturing yield of the light-emitting panel 10-3 can be significantly improved.

Claims (20)

1. A light-emitting panel comprising:

temporarily storing the substrate;

the support pattern layer is arranged on the temporary storage substrate and is provided with a plurality of openings;

the adhesive pattern layer is arranged on the support pattern layer and is provided with a plurality of openings, wherein the openings of the adhesive pattern layer are respectively overlapped with the openings of the support pattern layer; and

and a plurality of light emitting elements respectively arranged in the openings of the adhesion pattern layer, wherein each light emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer arranged between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer respectively, the electrodes are positioned between the active layer and the temporary storage substrate, and air gaps are formed between the electrodes and the temporary storage substrate.

2. The light-emitting panel of claim 1, wherein the electrodes of each of the light-emitting elements are in contact with the air gap.

3. The light-emitting panel according to claim 1, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer is in contact with the air gap.

4. The light-emitting panel of claim 1, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is located between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts the adhesion pattern layer.

5. The light-emitting panel of claim 4, wherein the first portion of the sidewall of the epitaxial layer is located between the second portion of the sidewall of the epitaxial layer and the temporary storage substrate, and the second portion of the sidewall of the epitaxial layer protrudes out of the adhesion pattern layer.

6. The light-emitting panel of claim 1, wherein each of the light-emitting elements has a maximum height H1 in a direction perpendicular to the temporary substrate, the adhesion pattern layer in contact with the light-emitting element has a maximum thickness H2 in the direction perpendicular to the temporary substrate, and 0.06 ≦ (H2/H1) ≦ 0.83.

7. The luminescent panel according to claim 1, wherein the support pattern layer further has a solid body, the solid body of the support pattern layer having sidewalls defining the openings of the support pattern layer; the adhesion pattern layer is also provided with an anchor part which is fixed on the entity of the support pattern layer; the adhesive pattern layer is also provided with a plurality of tying parts which are connected with the anchoring parts and respectively hung on the openings of the supporting pattern layer; the tie portions of the adhesive pattern layer are connected between the light emitting elements and the anchor portions of the adhesive pattern layer.

8. The light-emitting panel according to claim 7, wherein each of the plurality of portions of the adhesive pattern layer surrounds the plurality of electrodes of one of the plurality of light-emitting elements.

9. A light-emitting panel comprising:

temporarily storing the substrate;

the adhesive layer is arranged on the temporary storage substrate;

a plurality of light emitting elements disposed on the adhesive layer; and

and a plurality of adhesive patterns separated from each other and respectively disposed on the light emitting elements, wherein each light emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, the active layer is disposed between the electrodes and one of the adhesive patterns, each adhesive pattern has an opening, and the opening overlaps the electrodes of one of the light emitting elements.

10. The luminescent panel of claim 9, wherein the adhesion pattern surrounds the electrodes of the one of the light emitting elements.

11. The light-emitting panel according to claim 9, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer overlaps the opening of one of the adhesive patterns.

12. The light-emitting panel of claim 9, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts one of the adhesion patterns.

13. The light-emitting panel of claim 12, wherein a second portion of the sidewall of the epitaxial layer is located between the first portion of the sidewall of the epitaxial layer and the temporary storage substrate, and the second portion of the sidewall of the epitaxial layer protrudes beyond the one of the plurality of adhesion patterns.

14. The luminescent panel of claim 9, wherein each of the light emitting elements has a maximum height H1 in a direction perpendicular to the temporary substrate, one of the adhesion patterns contacting the light emitting element has a maximum thickness H2 in the direction perpendicular to the temporary substrate, and 0.06 ≦ (H2/H1) ≦ 0.83.

15. A light-emitting panel comprising:

a driving back plate having a plurality of contact pad sets;

a plurality of light emitting elements, wherein each light emitting element comprises a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, and the electrodes of the light emitting elements are electrically connected to the pad sets of the driving back plate; and

and a plurality of adhesion patterns which are separated from each other, are respectively arranged on the light-emitting elements and are positioned between the light-emitting elements and the driving backboard, wherein each adhesion pattern is provided with an opening, and the opening is overlapped with the electrodes of one of the light-emitting elements.

16. The luminescent panel of claim 15, wherein the adhesion pattern surrounds the electrodes of the one of the light emitting elements.

17. The light-emitting panel according to claim 15, wherein each of the light-emitting elements further comprises an insulating layer disposed on the second semiconductor layer and having a plurality of contact windows respectively overlapping the first semiconductor layer and the second semiconductor layer, the electrodes being electrically connected to the first semiconductor layer and the second semiconductor layer through the contact windows of the insulating layer, respectively; the insulating layer is provided with a first part, is arranged on the second semiconductor layer and is positioned between the electrodes; the first portion of the insulating layer overlaps the opening of one of the adhesive patterns.

18. The light-emitting panel of claim 15, wherein each of the light-emitting elements further comprises an epitaxial layer, the first semiconductor layer is between the epitaxial layer and the active layer, and a first portion of a sidewall of the epitaxial layer contacts one of the adhesion patterns.

19. The luminescent panel of claim 18, wherein a second portion of the sidewall of the epitaxial layer is located between the first portion of the sidewall of the epitaxial layer and the driving back plate, and the second portion of the sidewall of the epitaxial layer protrudes beyond the one of the adhesion patterns.

20. The light-emitting panel of claim 15, wherein each of the light-emitting elements has a maximum height H1 in a direction perpendicular to the driving back plate, one of the adhesion patterns contacting the light-emitting element has a maximum thickness H2 in the direction perpendicular to the driving back plate, and 0.06 ≦ (H2/H1) ≦ 0.83.

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