CN115718247A - A non-contact thyristor operating junction temperature online detection system and method - Google Patents
A non-contact thyristor operating junction temperature online detection system and methodDownload PDFInfo
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Translated fromChinese技术领域technical field
本发明涉及晶闸管状态检测领域，特别是涉及一种晶闸管工作结温在线结温检测技术。The invention relates to the field of thyristor state detection, in particular to an online junction temperature detection technology of thyristor working junction temperature.
背景技术Background technique
自1956年美国贝尔实验室发明晶闸管以来，晶闸管一直是电力电子领域中广泛使用的开关器件之一。虽然在高频、中小功率等应用中有很多其他类型的半导体器件(如MOSFET、IGBT等)可供选择，但因晶闸管有高耐压、低损耗、小体积和高可靠性等优点，作为高压开关类器件在电力系统中得到广泛应用，如无功补偿技术中的晶闸管投切电容器(TSC)、晶闸管控制电抗器(TCR)等。特别是近些年来高压直流输电(HVDC)和高压柔性交流输电系统(FACTS)的迅速发展，使得晶闸管器件在高压应用环境中的优势进一步突显。另外，晶闸管器件还应用于高压换流设备，高压变频器等领域。因此，作为高压系统中的核心元件，晶闸管的可靠性关系到系统整体的安全有效运行。晶闸管的结温是决定相关设备能否稳定运行的主要因素，以实际运行工况下的换流阀为例，晶闸管结温每升高10℃，换流阀的故障率就会翻一倍。晶闸管结温的实时监测对设备串联均压机制、内外部过电压、过电流和控制保护策略等方面有重要意义。通过对运行晶闸管结温的动态监测，可以为相关设备的过热保护提供更科学的、准确的判断依据，及时进行运行调整，降低其运行风险。Since the invention of the thyristor by Bell Laboratories in the United States in 1956, the thyristor has been one of the widely used switching devices in the field of power electronics. Although many other types of semiconductor devices (such as MOSFETs, IGBTs, etc.) Switching devices are widely used in power systems, such as thyristor switched capacitors (TSC) and thyristor controlled reactors (TCR) in reactive power compensation technology. Especially in recent years, the rapid development of high-voltage direct current transmission (HVDC) and high-voltage flexible alternating current transmission system (FACTS) has further highlighted the advantages of thyristor devices in high-voltage application environments. In addition, thyristor devices are also used in high-voltage converter equipment, high-voltage frequency converters and other fields. Therefore, as a core component in a high-voltage system, the reliability of the thyristor is related to the safe and effective operation of the system as a whole. The junction temperature of the thyristor is the main factor that determines whether the related equipment can operate stably. Taking the converter valve under actual operating conditions as an example, the failure rate of the converter valve will double for every 10°C increase in the junction temperature of the thyristor. Real-time monitoring of thyristor junction temperature is of great significance to equipment series voltage equalization mechanism, internal and external overvoltage, overcurrent and control and protection strategies. Through the dynamic monitoring of the junction temperature of the operating thyristor, it can provide a more scientific and accurate judgment basis for the overheating protection of related equipment, make timely operation adjustments, and reduce its operation risk.
目前针对晶闸管在线结温检测的的方法可分为接触式和非接触式两种类型。其中，接触式测温方法有热电偶法和光纤测温法，两者的温度采集装置均需与被测对象直接接触，需要修改原装置的结构设计，在高压应用中还存在绝缘问题。非接触测温可利用红外测温仪或红外热成像仪实现，便于工作人员操作。但相关设备高度集成，受限于角度和距离等问题，无法实现对晶闸管结温的实时准确监测。如何实现晶闸管的非接触式实时在线结温检测充满挑战。At present, the methods for online junction temperature detection of thyristors can be divided into two types: contact type and non-contact type. Among them, the contact temperature measurement methods include thermocouple method and optical fiber temperature measurement method. The temperature acquisition devices of both need to be in direct contact with the measured object, and the structural design of the original device needs to be modified. There are still insulation problems in high-voltage applications. Non-contact temperature measurement can be realized by infrared thermometer or infrared thermal imager, which is convenient for staff to operate. However, the related equipment is highly integrated, and limited by angle and distance, it is impossible to realize real-time and accurate monitoring of the thyristor junction temperature. How to realize the non-contact real-time online junction temperature detection of thyristor is full of challenges.
发明内容Contents of the invention
为克服上述现有技术不足，本发明提供一种晶闸管工作结温在线检测系统和方法，通过晶闸管温敏参数，即门极电流峰值及其输入电荷量的测量，实现对晶体管工作结温的实时监测，通过罗氏线圈实现晶闸管工作结温的非接触测量，保证结温检测系统和高压系统的可靠高效运行。In order to overcome the above-mentioned deficiencies in the prior art, the present invention provides a thyristor operating junction temperature online detection system and method, through the thyristor temperature-sensitive parameters, that is, the measurement of the peak value of the gate current and its input charge, to realize the real-time detection of the transistor operating junction temperature Monitoring, the non-contact measurement of the thyristor working junction temperature is realized through the Rogowski coil to ensure the reliable and efficient operation of the junction temperature detection system and the high-voltage system.
本发明采用的技术方案如下：The technical scheme that the present invention adopts is as follows:
第一方面，本发明提供了一种非接触式晶闸管工作结温的在线检测系统，包括：In the first aspect, the present invention provides an online detection system for the working junction temperature of a non-contact thyristor, including:
功率回路单元，与待测晶闸管连接；The power loop unit is connected with the thyristor to be tested;
采样单元，用于采集功率回路单元中的直流母线电流、晶闸管两端电压、晶闸管门极驱动电压以及晶闸管实际工作结温；The sampling unit is used to collect the DC bus current in the power loop unit, the voltage across the thyristor, the gate drive voltage of the thyristor and the actual working junction temperature of the thyristor;
温控单元，用于调控晶闸管实际运行工况下的环境温度，改变晶闸管实际工作结温；The temperature control unit is used to regulate the ambient temperature under the actual operating condition of the thyristor and change the actual working junction temperature of the thyristor;
驱动单元，与晶闸管相连，用于驱动晶闸管工作；The driving unit is connected with the thyristor and is used to drive the thyristor to work;
结温检测单元，用于测量晶闸管门极电流信号，并提取门极电流信号随时间的积分，得到输入晶闸管门极的电荷数；以及在晶闸管由正向导通状态切换至导通状态的瞬态过程中提取门极电流信号的峰值；根据晶闸管门极电流信号、输入晶闸管门极的电荷数、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值，并结合采样单元得到的直流母线电流、晶闸管两端电压、晶闸管门极驱动电压，计算得到晶闸管工作结温的估计值。The junction temperature detection unit is used to measure the gate current signal of the thyristor, and extract the integral of the gate current signal over time to obtain the charge number input to the gate of the thyristor; Extract the peak value of the gate current signal during the process; according to the gate current signal of the thyristor, the number of charges input to the gate of the thyristor, and the peak value of the gate current signal during the transient process of switching the thyristor from the forward conduction state to the conduction state, combined with The DC bus current, the voltage across the thyristor, and the gate drive voltage of the thyristor obtained by the sampling unit are calculated to obtain an estimated value of the operating junction temperature of the thyristor.
进一步地，所述的功率回路单元包括直流电压源、电解电容、放电电阻、辅助二极管、辅助开关管、辅助电感、第一开关和第二开关；所述的直流电压源正极与第一开关一端相连，第一开关另一端与电解电容一端、放电电阻一端、辅助二极管阴极相连，放电电阻另一端与第二开关一端相连，辅助二极管阳极与辅助开关管集电极相连，辅助开关管发射极与晶闸管阳极相连，辅助电感与辅助二极管并联，直流电压源负极与电解电容另一端、第二开关另一端、晶闸管阴极相连。Further, the power loop unit includes a DC voltage source, an electrolytic capacitor, a discharge resistor, an auxiliary diode, an auxiliary switch tube, an auxiliary inductor, a first switch, and a second switch; the anode of the DC voltage source is connected to one end of the first switch The other end of the first switch is connected to one end of the electrolytic capacitor, one end of the discharge resistor, and the cathode of the auxiliary diode, the other end of the discharge resistor is connected to one end of the second switch, the anode of the auxiliary diode is connected to the collector of the auxiliary switch tube, and the emitter of the auxiliary switch tube is connected to the thyristor The anode is connected, the auxiliary inductance is connected in parallel with the auxiliary diode, the negative electrode of the DC voltage source is connected with the other end of the electrolytic capacitor, the other end of the second switch, and the cathode of the thyristor.
进一步地，所述的驱动单元包括晶闸管驱动电路和辅助电源，所述晶闸管驱动电路用于为晶闸管的门极提供驱动电压，以控制其由正向阻断状态转换为导通状态；所述辅助电源用于为驱动电路供电。Further, the drive unit includes a thyristor drive circuit and an auxiliary power supply, the thyristor drive circuit is used to provide a drive voltage for the gate of the thyristor to control its transition from a forward blocking state to a conducting state; the auxiliary The power supply is used to power the driving circuit.
进一步地，所述的结温检测单元内存储有晶闸管工作结温计算模型，所述的晶闸管工作结温计算模型是由晶闸管门极电流信号、输入晶闸管门极的电荷数、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值、直流母线电流、晶闸管两端电压、晶闸管门极驱动电压和晶闸管工作结温拟合得到的。Further, the thyristor operating junction temperature calculation model is stored in the junction temperature detection unit, and the thyristor operating junction temperature calculation model is composed of the thyristor gate current signal, the charge number input to the thyristor gate, and the thyristor is turned on by the forward conduction. It is obtained by fitting the peak value of the gate current signal, the DC bus current, the voltage across the thyristor, the gate drive voltage of the thyristor and the operating junction temperature of the thyristor during the transient process of the state switching to the conduction state.
进一步地，所述的结温检测单元包括晶闸管门极电流测量模块、晶闸管门极输入电荷量检测模块和结温计算模块；Further, the junction temperature detection unit includes a thyristor gate current measurement module, a thyristor gate input charge detection module, and a junction temperature calculation module;
所述的晶闸管门极电流测量模块通过罗氏线圈获得晶闸管门极电流关于时间的微分信号，并还原得到门极电流信号；The thyristor gate current measurement module obtains the differential signal of the thyristor gate current with respect to time through the Rogowski coil, and restores the gate current signal;
所述的晶闸管门极输入电荷量检测模块利用晶闸管门极电流测量模块提取的晶闸管门级电流关于时间的微分信号，对时间进行积分，得到晶闸管由正向导通状态切换至导通状态的瞬态过程中门极获得的电荷量；The thyristor gate input charge detection module uses the differential signal of the thyristor gate current with respect to time extracted by the thyristor gate current measurement module to integrate the time to obtain the transient state of the thyristor switching from the forward conduction state to the conduction state The amount of charge acquired by the gate during the process;
所述的结温计算模块，其用于提取晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值，以及用于根据晶闸管工作结温计算模型来得到晶闸管工作结温。The junction temperature calculation module is used to extract the peak value of the gate current signal during the transient process of switching the thyristor from the forward conduction state to the conduction state, and to obtain the thyristor operating junction temperature calculation model according to the thyristor operating junction temperature calculation model. temperature.
进一步地，所述的晶闸管门极电流测量模块包括罗氏线圈和第一有损积分电路；Further, the thyristor gate current measurement module includes a Rogowski coil and a first lossy integration circuit;
所述罗氏线圈为空心线圈，连接晶闸管门极的导线穿过空心线圈，用于获得晶闸管门极电流关于时间的微分信号；The Rogowski coil is an air-core coil, and the wire connected to the gate of the thyristor passes through the air-core coil to obtain a differential signal of the gate current of the thyristor with respect to time;
所述的第一有损积分电路包括第一电阻、第二电阻、第三电阻、第一电容、第二电容和第一运算放大器；所述的第一电阻一端与罗氏线圈一端相连，第一电阻另一端与第一电容一端、第一运算放大器正向输入端相连，罗氏线圈另一端、第一电容另一端接地；第一运算放大器负向输入端与第二电阻一端、第三电阻一端、第二电容一端相连，第三电阻另一端、第二电容另一端与第一运算放大器输出端相连，第二电阻另一端接地；所述的第一电阻一端为第一有损积分电路的输入端，第一运算放大器输出端为第一有损积分电路的输出端，即晶闸管门极电流测量模块的输出端。The first lossy integration circuit includes a first resistor, a second resistor, a third resistor, a first capacitor, a second capacitor and a first operational amplifier; one end of the first resistor is connected to one end of the Rogowski coil, and the first The other end of the resistor is connected to one end of the first capacitor and the positive input end of the first operational amplifier, the other end of the Rogowski coil and the other end of the first capacitor are grounded; the negative input end of the first operational amplifier is connected to one end of the second resistor, one end of the third resistor, One end of the second capacitor is connected, the other end of the third resistor and the other end of the second capacitor are connected to the output end of the first operational amplifier, and the other end of the second resistor is grounded; one end of the first resistor is the input end of the first lossy integration circuit , the output end of the first operational amplifier is the output end of the first lossy integration circuit, that is, the output end of the thyristor gate current measurement module.
进一步地，所述的晶闸管门极输入电荷量检测模块由第二有损积分电路构成；Further, the thyristor gate input charge detection module is composed of a second lossy integration circuit;
所述的第二有损积分电路包括第四电阻、第五电阻、第六电阻、第三电容和第二运算放大器；所述的第四电阻一端与晶闸管门极电流测量模块的输出端相连，第四电阻另一端与第二运算放大器正向输入端相连，第二运算放大器负向输入端与第五电阻一端、第六电阻一端、第三电容一端相连，第六电阻另一端、第三电容另一端与第二运算放大器输出端相连，第五电阻另一端接地；所述的第四电阻一端为晶闸管门极输入电荷量检测模块的输入端，第二运算放大器输出端为晶闸管门极输入电荷量检测模块的输出端。The second lossy integration circuit includes a fourth resistor, a fifth resistor, a sixth resistor, a third capacitor and a second operational amplifier; one end of the fourth resistor is connected to the output end of the thyristor gate current measurement module, The other end of the fourth resistor is connected to the positive input end of the second operational amplifier, the negative input end of the second operational amplifier is connected to one end of the fifth resistor, one end of the sixth resistor, and one end of the third capacitor, and the other end of the sixth resistor is connected to the third capacitor The other end is connected to the output end of the second operational amplifier, and the other end of the fifth resistor is grounded; one end of the fourth resistor is the input end of the thyristor gate input charge detection module, and the second operational amplifier output end is the thyristor gate input charge The output terminal of the quantity detection module.
进一步地，所述的结温计算模块采用现场可编程门阵列FPGA。Further, the junction temperature calculation module adopts a field programmable gate array FPGA.
第二方面，本发明提供了一种非接触式晶闸管工作结温的在线检测系统的检测方法，包括以下步骤：In a second aspect, the present invention provides a detection method for an online detection system of a non-contact thyristor operating junction temperature, comprising the following steps:
步骤1，建立晶闸管工作结温计算模型：Step 1, establish the thyristor operating junction temperature calculation model:
1.1)在不超过待测晶闸管最大工作电压、最大工作电流以及最大工作结温的条件下设定运行工况；对于任一运行工况，在晶闸管由正向导通状态切换至导通状态的瞬态过程中，获取一组直流母线电流、晶闸管两端电压、晶闸管门极驱动电压、晶闸管门极电流信号和晶闸管工作结温的数据，根据晶闸管门极电流信号计算对应运行工况下输入晶闸管门极的电荷数以及晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值；1.1) Set the operating condition under the condition of not exceeding the maximum operating voltage, maximum operating current and maximum operating junction temperature of the thyristor to be tested; for any operating condition, when the thyristor is switched from the forward conduction state to the conduction state In the state process, a set of data of DC bus current, voltage across the thyristor, thyristor gate drive voltage, thyristor gate current signal and thyristor operating junction temperature are obtained, and the input thyristor gate under corresponding operating conditions is calculated according to the thyristor gate current signal. The number of charges on the pole and the peak value of the gate current signal during the transient process of switching the thyristor from the forward conduction state to the conduction state;
1.2)遍历所有运行工况，获得每一运行工况下的输入晶闸管门极的电荷数以及晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值数据，以各运行工况下的直流母线电流、晶闸管两端电压、晶闸管门极驱动电压、输入晶闸管门极的电荷数、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值为自变量，以晶闸管实际工作结温为因变量，拟合得到晶闸管工作结温计算模型；1.2) Go through all the operating conditions, obtain the charge number of the input thyristor gate under each operating condition and the peak value data of the gate current signal during the transient process of the thyristor switching from the forward conduction state to the conduction state, and use each The DC bus current under operating conditions, the voltage across the thyristor, the gate drive voltage of the thyristor, the number of charges input to the gate of the thyristor, and the peak value of the gate current signal during the transient process of switching the thyristor from the forward conduction state to the conduction state is the independent variable, and the actual working junction temperature of the thyristor is taken as the dependent variable, and the calculation model of the working junction temperature of the thyristor is obtained by fitting;
步骤2，在线检测晶闸管工作结温：Step 2, online detection of thyristor operating junction temperature:
检测晶闸管门极电流信号，并计算输入晶闸管门极的电荷数以及晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值；同时在晶闸管由正向导通状态切换至导通状态的瞬态过程中采集直流母线电流、晶闸管两端电压和晶闸管门极驱动电压，利用晶闸管工作结温计算模型计算晶闸管工作结温的估计值。Detect the gate current signal of the thyristor, and calculate the number of charges input to the gate of the thyristor and the peak value of the gate current signal during the transient process of the thyristor switching from the forward conduction state to the conduction state; at the same time, when the thyristor is switched from the forward conduction state to During the transient process of the conduction state, the DC bus current, the voltage across the thyristor and the gate drive voltage of the thyristor are collected, and the estimated value of the thyristor's operating junction temperature is calculated by using the thyristor operating junction temperature calculation model.
当晶闸管所在的应用环境相对明确的情况下，其主功率回路、负载对象是相对确定的，因此晶闸管门极触发电流仅与直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG以及晶闸管工作结温TJ这四个与实时工况相关的物理量有关，所以实时监测晶闸管门极输入电流IG与直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG这四个物理量，即可反推出晶闸管的工作结温。本发明采用罗氏线圈实现非接触式的电流采样，其输出的电压信号也便于后续处理电路进行处理，具有更高的易用性、准确性和实时性。When the application environment of the thyristor is relatively clear, its main power circuit and load object are relatively definite, so the gate trigger current of the thyristor is only related to the DC bus current IDC , the voltage across the thyristor VAK , and the gate driving voltage of the thyristor. VG and thyristor junction temperature TJ are four physical quantities related to real-time working conditions, so real-time monitoring of thyristor gate input current IG and DC bus current IDC , thyristor terminal voltage VAK , thyristor gate drive voltage The four physical quantities of VG can be reversed to deduce the working junction temperature of the thyristor. The invention adopts the Rogowski coil to realize non-contact current sampling, and the output voltage signal is also convenient for subsequent processing circuits to process, and has higher usability, accuracy and real-time performance.
附图说明Description of drawings
图1为本发明实施例示出的晶闸管工作结温在线检测系统的结构示意图；Fig. 1 is a schematic structural diagram of a thyristor working junction temperature online detection system shown in an embodiment of the present invention;
图2为本发明实施例示出的建立晶闸管工作结温计算模型的过程和实际检测方法的流程图；Fig. 2 is the flow chart of the process of establishing the thyristor working junction temperature calculation model and the actual detection method shown in the embodiment of the present invention;
图3为晶闸管结构示意图；Fig. 3 is a schematic diagram of the thyristor structure;
图4为晶闸管门极电流测量模块，(a)罗氏线圈结构示意图，(b)罗氏线圈等效电路示意图，(c)有损积分电路示意图；Fig. 4 is a thyristor gate current measurement module, (a) a schematic diagram of a Rogowski coil structure, (b) a schematic diagram of an equivalent circuit of a Rogowski coil, and (c) a schematic diagram of a lossy integral circuit;
图5为晶闸管门极输入电荷量检测模块；Fig. 5 is a thyristor gate input charge detection module;
图6为实际运行条件下本发明的应用示例，VAC为交流电压源，T1～T6为晶闸管，另有三个感性负载；Fig. 6 is an application example of the present invention under actual operating conditions, VAC is an AC voltage source, T1 to T6 are thyristors, and there are three other inductive loads;
图7为某一应用实例的各参数波形图，(a)为母线电压信号VAC波形，(b)为图5中T5晶闸管在某一导通角下其两端的电压信号VT5波形，(c)为该晶闸管的驱动电压信号VG波形，(d)为该晶闸管的驱动电流信号IG波形，IG_peak为晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值，(e)为该晶闸管输入的电荷量QG波形，QG_max为晶闸管进行一次开通动作获得的最大电荷量；Figure 7 is a waveform diagram of various parameters of a certain application example, (a) is the waveform of the bus voltage signal VAC , (b) is the waveform of the voltage signal VT5 at both ends of theT5 thyristor in Figure 5 under a certain conduction angle, (c) is the driving voltage signal VG waveform of the thyristor, (d) is the driving current signal IG waveform of the thyristor, and IG_peak is the gate current during the transient process of the thyristor switching from the forward conduction state to the conduction state The peak value of the signal, (e) is the waveform of the charge quantity QG input by the thyristor, and QG_max is the maximum charge quantity obtained by the thyristor for one turn-on action;
图8是晶闸管结温标定实验各测试信号时序图。Fig. 8 is a timing diagram of each test signal in the thyristor junction temperature calibration experiment.
具体实施方式Detailed ways
为了更为具体地描述本发明，下面结合附图及具体实施方式对本发明的技术方案进行详细说明。In order to describe the present invention more specifically, the technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
如图3所示为晶闸管结构示意图，在晶闸管两端施加正向电压时，即VAK>0，三个PN结中J1结和J3结处于轻微的正向偏置，J2结处于反向阻断状态，承受几乎所有的外部电压，仅有极小的漏电流通过晶闸管本体。在晶闸管G极和K极间施加正向电压，即UGK>0时，T2晶体管导通，主电流从其集电极流向发射极。T2晶体管集电极电流的流出给T1晶体管基极提供了开通电流，促使了T1晶体管的导通。而T1的导通又从AK间获取电流，从T1的发射极流入，集电极流出，同时注入到T2的基极促使T2的进一步开通。这样形成了一个正反馈过程。当正反馈进行到一定程度，T1和T2两个晶体管都进入到饱和状态，则晶闸管开通。此时晶闸管AK间电阻极低，呈现低电压大电流状态。由于两个晶体管正反馈状态已经形成，当晶闸管开通后，撤去G极触发电压UGK，晶闸管依然能够维持导通状态。根据半导体物理学相关知识，半导体功率器件内部的物理参数都与温度息息相关。以硅基材料为例，其本征载流子浓度可由下式表示：Figure 3 is a schematic diagram of the thyristor structure. When a forward voltage is applied to both ends of the thyristor, that is, VAK >0, theJ1 junction andJ3 junction of the three PN junctions are slightly forward biased, and theJ2 junction is at In the reverse blocking state, it withstands almost all external voltages, and only a very small leakage current passes through the thyristor body. When a forward voltage is applied between the G and K electrodes of the thyristor, that is, when UGK >0, theT2 transistor is turned on, and the main current flows from its collector to the emitter. The outflow of the collector current of theT2 transistor provides the turn-on current to the base of theT1 transistor, which promotes the conduction of theT1 transistor. The conduction ofT1 draws current from AK, flows in from the emitter ofT1 , flows out of the collector, and injects into the base ofT2 at the same time to promote the further opening ofT2 . This forms a positive feedback process. When the positive feedback reaches a certain level, both transistors T1 and T2 enter a saturated state, and the thyristor is turned on. At this time, the resistance between the thyristors AK is extremely low, showing a state of low voltage and high current. Since the positive feedback state of the two transistors has been formed, when the thyristor is turned on, the G electrode trigger voltage UGK is removed, and the thyristor can still maintain the conduction state. According to the relevant knowledge of semiconductor physics, the physical parameters inside semiconductor power devices are closely related to temperature. Taking silicon-based materials as an example, the intrinsic carrier concentration can be expressed by the following formula:
其中，T为热力学温度。该式表明硅的本征载流子浓度随温度的升高而增加。此外，半导体内部载流子浓度也呈现温度相关性，对于电子，其迁移率为where T is the thermodynamic temperature. This formula shows that the intrinsic carrier concentration of silicon increases with temperature. In addition, the carrier concentration inside the semiconductor also exhibits temperature dependence. For electrons, the mobility is
对于空穴，其迁移率为For holes, the mobility is
其中，T为热力学温度。该式表明电子与空穴的迁移率则会随着温度的升高而降低。而晶闸管触发电流可表示为：where T is the thermodynamic temperature. This formula shows that the mobility of electrons and holes will decrease with the increase of temperature. The thyristor trigger current can be expressed as:
其中，Vbi为P型基区电阻所承受的电压阈值，当栅极电流在该电阻上产生Vbi时，晶闸管从正向阻断状态触发进入导通状态；WP为从门极到第一短路阴极之间阴极区域的总宽度，ρPB为P型基区的电阻率，rK1和rK2为晶闸管结构参数。根据相关知识，半导体内部电阻率
基于上述的晶闸管特性，图1为本发明实施例提出的晶闸管工作结温的在线检测系统的示意图。整个测试系统包括由直流电压源VS、电解电容CDC、放电电阻R、待测晶闸管、辅助二极管Daux、辅助开关管Taux、辅助电感Laux、开关K1K2构成的功率回路单元，以及驱动单元、温控单元、采样单元和结温检测单元。Based on the above-mentioned thyristor characteristics, FIG. 1 is a schematic diagram of an online detection system for the thyristor operating junction temperature proposed by an embodiment of the present invention. The whole test system includes a power loop unit composed of a DC voltage source VS , an electrolytic capacitor CDC , a discharge resistor R, a thyristor to be tested, an auxiliary diode Daux , an auxiliary switch tube Taux , an auxiliary inductor Laux , and a switch K1 K2 , and a drive unit, a temperature control unit, a sampling unit and a junction temperature detection unit.
其中：功率回路单元中，直流电压源VS的正极与开关K1相连，K1另一端与电解电容CDC的一端、放电电阻的一端、辅助二极管Daux阴极相连，放电电阻相互串联并与开关K2的一端相连，辅助二极管Daux阳极与辅助开关管Taux集电极相连，辅助开关管Taux发射极与晶闸管阳极相连，直流电压源VS的负极与晶闸管阴极、电解电容另一端、以及开关K2另一端相连，辅助电感与辅助二极管并联；VDC为直流母线电压，IDC为通过晶闸管的电流，VG为晶闸管门极驱动电压，IG为晶闸管门极电流，TJ为晶闸管工作结温。所述的放电电阻可以是一个电阻，也可以是两个及两个以上电阻的串联结构。Among them: in the power loop unit, the anode of the DC voltage source VS is connected to the switch K1 , the other end of K1 is connected to one end of the electrolytic capacitor CDC , one end of the discharge resistor, and the cathode of the auxiliary diode Daux , and the discharge resistors are connected in series with each other and connected to One end of the switchK2 is connected, the anode of the auxiliary diode Daux is connected with the collector of the auxiliary switch tube Taux , the emitter of the auxiliary switch tube Taux is connected with the anode of the thyristor, the negative pole of the DC voltage source VS is connected with the cathode of the thyristor, the other end of the electrolytic capacitor, And the other end of the switch K2 is connected, the auxiliary inductance is connected in parallel with the auxiliary diode; VDC is the DC bus voltage, IDC is the current passing through the thyristor, VG is the thyristor gate driving voltage, IG is the thyristor gate current, TJ is Thyristor operating junction temperature. The discharge resistor can be one resistor, or a series structure of two or more resistors.
采样单元，用于采集直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG以及晶闸管的工作结温；The sampling unit is used to collect the DC bus current IDC , the voltage across the thyristor VAK , the thyristor gate drive voltage VG and the operating junction temperature of the thyristor;
温控单元，用于调控晶闸管实际运行工况下的环境温度；本实施例中，温控单元与被测晶闸管接触。The temperature control unit is used to regulate the ambient temperature of the thyristor under the actual operating condition; in this embodiment, the temperature control unit is in contact with the thyristor under test.
驱动单元，与晶闸管相连；所述的驱动单元包括晶闸管驱动电路以及相应的辅助电源；其中，所述晶闸管驱动电路用于为晶闸管的门极提供恒定电压与足够大的驱动电流，以控制其由正向阻断状态转换为导通状态；所述辅助电源为某种低压电源，用于为上述驱动电路提供足够的功率；The driving unit is connected with the thyristor; the driving unit includes a thyristor driving circuit and a corresponding auxiliary power supply; wherein, the thyristor driving circuit is used to provide a constant voltage and a sufficiently large driving current for the gate of the thyristor to control it by The forward blocking state is converted into a conducting state; the auxiliary power supply is a low-voltage power supply, which is used to provide sufficient power for the above-mentioned drive circuit;
结温检测单元，用于采集晶闸管门极电流信号IG，并提取电流信号随时间的积分，即输入晶闸管门极的电荷数QG以及在晶闸管由正向导通状态切换至导通状态的瞬态过程中提取电流信号的峰值IG_peak；所述结温检测单元内存有关于直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG、输入晶闸管门极的电荷数QG、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak和晶闸管工作结温的数据表格；The junction temperature detection unit is used to collect the gate current signal IG of the thyristor, and extract the integral of the current signal over time, that is, the charge quantity QG input to the gate of the thyristor and the moment when the thyristor switches from the forward conduction state to the conduction state Extract the peak value IG_peak of the current signal during the state process; the junction temperature detection unit stores information about the DC bus current IDC , the voltage across the thyristor VAK , the gate drive voltage VG of the thyristor, and the charge quantity QG input to the gate of the thyristor. , the data table of the peak value IG_peak of the gate current signal and the operating junction temperature of the thyristor during the transient process of switching the thyristor from the forward conduction state to the conduction state;
以数据表格中各运行工况下的直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG、输入晶闸管门极的电荷数QG、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak为自变量，以晶闸管实际工作结温为因变量，拟合得到晶闸管工作结温计算模型，包括但不限于一阶方程、二阶方程和高阶方程。进而根据直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG、输入晶闸管门极的电荷数QG、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak，通过晶闸管工作结温计算模型得到晶闸管的工作结温，此时，无需温控单元作用，实现了晶闸管工作结温的非接触在线检测。Based on the DC bus current IDC , the voltage across the thyristor VAK , the gate drive voltage VG of the thyristor, the charge QG input to the gate of the thyristor, and the switching of the thyristor from the forward conduction state to the conduction state under each operating condition in the data table, The peak value IG_peak of the gate current signal in the transient process of the on-state is used as the independent variable, and the actual operating junction temperature of the thyristor is used as the dependent variable, and the calculation model of the operating junction temperature of the thyristor is obtained by fitting, including but not limited to the first-order equation and the second-order equation and higher order equations. Furthermore, according to the DC bus current IDC , the voltage across the thyristor VAK , the gate drive voltage VG of the thyristor, the charge quantity QG input to the gate of the thyristor, and the gate during the transient process of switching the thyristor from the forward conduction state to the conduction state The peak value IG_peak of the pole current signal is used to obtain the operating junction temperature of the thyristor through the calculation model of the operating junction temperature of the thyristor. At this time, the non-contact online detection of the operating junction temperature of the thyristor is realized without the function of the temperature control unit.
基于上述晶闸管工作结温在线检测系统，通过结温标定实验建立晶闸管工作结温计算模型的过程如图2中的左半部分所示，具体叙述如下：选择待测晶闸管的起始温度、起始电流、起始电压和门极驱动电压；Based on the online detection system of the thyristor working junction temperature, the process of establishing the thyristor working junction temperature calculation model through the junction temperature calibration experiment is shown in the left half of Fig. 2. The specific description is as follows: select the initial temperature, initial current, starting voltage and gate drive voltage;
S1.1，将直流电压源输出电压设为待测晶闸管的起始电压，断开开关K2，闭合开关K1，通过直流电压源向电解电容充电；S1.1, set the output voltage of the DC voltage source as the initial voltage of the thyristor to be tested, turn off the switch K2 , close the switch K1 , and charge the electrolytic capacitor through the DC voltage source;
S1.2，电解电容充满电后，断开开关K1，将驱动单元输出电压设为待测晶闸管的起始驱动电压并开始输出，晶闸管导通，采样单元和结温检测单元共同作用下获得直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG、输入晶闸管门极的电荷数QG、晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak和晶闸管实际工作结温；S1.2, after the electrolytic capacitor is fully charged, turn off the switch K1 , set the output voltage of the driving unit as the initial driving voltage of the thyristor to be tested and start outputting, the thyristor is turned on, and the sampling unit and the junction temperature detection unit work together to obtain DC bus current IDC , voltage across the thyristor VAK , gate drive voltage VG of the thyristor, charge quantity QG input to the gate of the thyristor, gate current during the transient process of switching the thyristor from the forward conduction state to the conduction state The peak value IG_peak of the signal and the actual working junction temperature of the thyristor;
S1.3，通过调节温控单元，重新设置晶闸管的环境温度从而改变晶闸管实际工作结温，从待测晶闸管的起始温度为起点，以一定的温度间隔逐步增长到最高设置温度，最高设置温度不超过晶闸管允许的最高工作温度，同时保持待测晶闸管的起始电流、起始电压、起始驱动电压不变，重复上述步骤S1.1至S1.2，记录在待测晶闸管的起始电压、起始电流和起始驱动电压条件下，晶闸管不同工作结温对应的峰值IG_peak和电荷数QG。以此建立在待测晶闸管的起始电压、起始电流和起始驱动电压下，峰值IG_peak和电荷数QG对应的晶闸管工作结温的数据库；S1.3, by adjusting the temperature control unit, reset the ambient temperature of the thyristor to change the actual working junction temperature of the thyristor, starting from the initial temperature of the thyristor to be tested, gradually increasing to the highest setting temperature at a certain temperature interval, the highest setting temperature Do not exceed the maximum allowable operating temperature of the thyristor, while keeping the initial current, initial voltage, and initial driving voltage of the thyristor under test unchanged, repeat the above steps S1.1 to S1.2, and record the initial voltage of the thyristor under test , initial current and initial drive voltage conditions, the peak value IG_peak and the number of charges QG corresponding to different operating junction temperatures of the thyristor. In this way, a database of the thyristor operating junction temperature corresponding to the peak value IG_peak and the number of charges QG under the initial voltage, initial current and initial driving voltage of the thyristor to be tested is established;
S1.4，同理，保持直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG中的某两个物理量不变，调整其它一个物理量数值，重复上述步骤S1.1至S1.3，建立完整的晶闸管工作结温和直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG、输入晶闸管门极的电荷数QG、在晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak的物理量数据表格，并拟合得到晶闸管工作结温计算模型。本实施例中，通过调节直流电压源输出电压来改变晶闸管两端电压VAK，通过调节驱动单元输出电压来改变晶闸管门极驱动电压VG，通过调节辅助开关管开通时间长短来改变直流母线电流IDC(即通过晶闸管的电流)。S1.4. Similarly, keep certain two physical quantities of the DC bus current IDC , the voltage across the thyristor VAK , and the gate drive voltage VG of the thyristor unchanged, adjust the value of the other physical quantity, and repeat the above steps from S1.1 to S1.3, establish a complete thyristor operating junction temperature and DC bus current IDC , voltage across the thyristor VAK , thyristor gate drive voltage VG , charge QG input to the gate of the thyristor, switching from the forward conduction state of the thyristor The physical quantity data table of the peak value IG_peak of the gate current signal during the transient process to the conduction state, and fitted to obtain the thyristor operating junction temperature calculation model. In this embodiment, the voltage VAK at both ends of the thyristor is changed by adjusting the output voltage of the DC voltage source, the gate drive voltage VG of the thyristor is changed by adjusting the output voltage of the drive unit, and the DC bus current is changed by adjusting the turn-on time of the auxiliary switch. IDC (i.e. the current through the thyristor).
直流母线电流IDC的调节原理为：如图8所示，执行步骤S1.1，之后，①在辅助IGBT栅极和晶闸管门极同时施加高电平使两者同时导通，IDC开始在辅助电感作用下以某一di/dt的速率增加；②在t1时刻，IDC达到实验需要的电流值，在辅助IGBT栅极和晶闸管门极同时施加低电平使两者同时关断；③闭合K2使电容放电，单次实验结束。由上述内容可知，调整辅助电感大小可以调整电流上升速率，调整t1-t0这一时间段长度即可调整IDC。The regulation principle of the DC bus current IDC is as follows: as shown in Figure 8, execute step S1.1, and then, ① apply a high level to the gate of the auxiliary IGBT and the gate of the thyristor at the same time to make them conduct simultaneously, and IDC starts to be at Under the action of auxiliary inductance, increase at a certain rate of di/dt; ②At time t1 , IDC reaches the current value required for the experiment, and a low level is applied to the gate of the auxiliary IGBT and the gate of the thyristor to turn them off at the same time; ③Close K2 to discharge the capacitor, and the single experiment ends. It can be seen from the above that adjusting the size of the auxiliary inductance can adjust the current rising rate, and adjusting the length of the time period t1 -t0 can adjust IDC .
图7为本实施例中提取到的各参数波形图，(a)为母线电压信号VAC波形，(b)为图6中晶闸管T5在某一导通角下其两端的电压信号VT5波形，(c)为该晶闸管的驱动电压信号VG波形，(d)为该晶闸管的驱动电流信号IG波形，IG_peak为晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值，(e)为该晶闸管输入的电荷量QG波形，QG_max为晶闸管进行一次开通动作获得的最大电荷量。Fig. 7 is the wave diagram of each parameter extracted in the present embodiment, (a) is the waveform of the bus voltage signal VAC , (b) is the voltage signal VT5 at both ends of the thyristorT5 in Fig. 6 under a certain conduction angle Waveform, (c) is the driving voltage signal VG waveform of the thyristor, (d) is the driving current signal IG waveform of the thyristor, and IG_peak is the gate during the transient process of the thyristor switching from the forward conduction state to the conduction state The peak value of the pole current signal, (e) is the waveform of the charge quantity QG input by the thyristor, and QG_max is the maximum charge quantity obtained by the thyristor for one turn-on operation.
工作结温在线检测过程如图2中的右半部分所示，具体叙述如下：The online detection process of the working junction temperature is shown in the right half of Figure 2, and the specific description is as follows:
S2.1，检测晶闸管门极电流信号，并计算输入晶闸管门极的电荷数以及晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值；同时在晶闸管由正向导通状态切换至导通状态的瞬态过程中采集直流母线电流、晶闸管两端电压和晶闸管门极驱动电压；S2.1, detect the gate current signal of the thyristor, and calculate the number of charges input to the gate of the thyristor and the peak value of the gate current signal during the transient process when the thyristor switches from the forward conduction state to the conduction state; Collect the DC bus current, the voltage across the thyristor and the gate drive voltage of the thyristor during the transient process of switching from the on state to the on state;
S2.2，利用晶闸管工作结温计算模型得到晶闸管工作结温的估计值。S2.2, using the thyristor operating junction temperature calculation model to obtain an estimated value of the thyristor operating junction temperature.
在本发明的一项具体实施中，所述的结温检测单元包括晶闸管门极电流测量模块、晶闸管门极输入电荷量检测模块和结温计算模块；其中：In a specific implementation of the present invention, the junction temperature detection unit includes a thyristor gate current measurement module, a thyristor gate input charge detection module, and a junction temperature calculation module; wherein:
晶闸管门极电流测量模块的功能是通过罗氏线圈获得晶闸管门极电流关于时间的微分信号，并通过后续积分电路还原得到门极电流信号，经结温计算模块处理可提取其峰值信息。The function of the thyristor gate current measurement module is to obtain the differential signal of the thyristor gate current with respect to time through the Rogowski coil, and restore the gate current signal through the subsequent integration circuit, and extract its peak information after processing by the junction temperature calculation module.
如图4中的(a)所示，所述晶闸管门极电流测量模块包括罗氏线圈和第一有损积分电路；所述罗氏线圈为由PCB制成的圆环状传感器，由PCB上走线反复折叠绕制而成，其本质类似于空心线圈，被测电流穿过圆环；根据法拉第电磁感应定律，其输出信号是与被测电流积分成正比的电压信号
如图6所示，在本发明的一项具体实施中，VAC为交流电压源，T1～T6为晶闸管，另有三个感性负载；所述结温检测单元的罗氏线圈安装在图中所示位置，通过连接线与结温检测单元其它部分相连。当在晶闸管门极施加高电平时，晶闸管门极会流入如图所示的电流信号IG，结温检测单元通过罗氏线圈提取IG，经晶闸管门极电流测量模块和晶闸管门极输入电荷量检测模块获得该运行工况下的驱动电流峰值IG_peak和输入门极的电荷数QG。As shown in Figure 6, in a specific implementation of the present invention, VAC is an AC voltage source, T1 to T6 are thyristors, and there are three other inductive loads; the Rogowski coil of the junction temperature detection unit is installed in the figure The position shown is connected to other parts of the junction temperature detection unit through connecting wires. When a high level is applied to the gate of the thyristor, the gate of the thyristor will flow into the current signal IG as shown in the figure. The junction temperature detection unit extracts IG through the Rogowski coil, and the input charge is input through the gate current measurement module of the thyristor and the gate of the thyristor. The detection module obtains the driving current peak value IG_peak and the charge quantity QG of the input gate under the operating condition.
晶闸管门极输入电荷量检测模块的功能是利用晶闸管门极电流测量模块提取的晶闸管门级电流关于时间的微分信号，对时间进行积分，得到晶闸管由正向导通状态切换至导通状态的瞬态过程中门极获得的电荷量QG。The function of the thyristor gate input charge detection module is to use the differential signal of the thyristor gate current with respect to time extracted by the thyristor gate current measurement module to integrate the time to obtain the transient state of the thyristor switching from the forward conduction state to the conduction state The amount of charge QG obtained by the gate during the process.
如图5所示，所述晶闸管门极输入电荷量检测模块由第二有损积分电路构成，包括三个电阻R4、R5、R6，一个电容C3和第二运算放大器；其中，R4一端与晶闸管门极电流测量模块的输出端相连，R4另一端与第二运算放大器正向输入端相连，第二运算放大器负向输入端与R5、R6、C3的一端相连，R6、C3另一端与第二运算放大器输出端相连，R5另一端、罗氏线圈另一端接地。第二有损积分电路的输入端为R4一端，输出端为第二运算放大器输出端。该模块输出信号比例可通过调整R5、R6比值可进行调节。As shown in FIG. 5 , the thyristor gate input charge detection module is composed of a second lossy integration circuit, including three resistors R4 , R5 , R6 , a capacitor C3 and a second operational amplifier; wherein, One end of R4 is connected to the output end of the thyristor gate current measurement module, the other end of R4 is connected to the positive input end of the second operational amplifier, and the negative input end of the second operational amplifier is connected to one end of R5 , R6 , and C3 , the other end of R6 and C3 is connected to the output end of the second operational amplifier, the other end of R5 and the other end of the Rogowski coil are grounded. The input end of the second lossy integration circuit is one end of R4 , and the output end is the output end of the second operational amplifier. The output signal ratio of the module can be adjusted by adjusting the ratio of R5 and R6 .
由于罗氏线圈不接入晶闸管驱动电路，因此结温检测单元无需采取隔离措施。晶闸管门极电流测量模块输出的电流信号IG、输入晶闸管门极的电荷数QG以及采集模块提取的直流母线电流IDC、晶闸管两端电压VAK、晶闸管门极驱动电压VG等信号可送至结温计算单元(FPGA)，通过其内部保存的相关物理量数据表格和函数模型计算得到晶闸管的实时工作结温，结温计算单元同时具有提取晶闸管由正向导通状态切换至导通状态的瞬态过程中门极电流信号的峰值IG_peak的功能。为了便于实现晶闸管工作结温的在线检测，结温检测单元与驱动单元可以集成在一起。Since the Rogowski coil is not connected to the thyristor drive circuit, the junction temperature detection unit does not need to take isolation measures. The current signal IG output by the thyristor gate current measurement module, the charge quantity QG input to the thyristor gate, the DC bus current IDC extracted by the acquisition module, the voltage across the thyristor VAK , and the thyristor gate drive voltage VG can be Send it to the junction temperature calculation unit (FPGA), and calculate the real-time working junction temperature of the thyristor through the relevant physical quantity data tables and function models stored in it. The junction temperature calculation unit also has the function of extracting the thyristor from the forward conduction state to the conduction state. Function of the peak value IG_peak of the gate current signal during the transient. In order to facilitate the online detection of the operating junction temperature of the thyristor, the junction temperature detection unit and the driving unit can be integrated together.
以上列举的仅是本发明的具体实施例。显然，本发明不限于以上实施例，还可以有许多变形。本领域的普通技术人员能从本发明公开的内容直接导出或联想到的所有变形，均应认为是本发明的保护范围。What are listed above are only specific embodiments of the present invention. Obviously, the present invention is not limited to the above embodiments, and many variations are possible. All deformations that can be directly derived or associated by those skilled in the art from the content disclosed in the present invention should be considered as the protection scope of the present invention.
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| CN116008768A (en)* | 2023-03-24 | 2023-04-25 | 杭州飞仕得科技股份有限公司 | Conduction voltage drop test circuit and junction temperature tester |
| CN117176121A (en)* | 2023-11-02 | 2023-12-05 | 成都沃飞天驭科技有限公司 | Electronic switch driving circuit, control method and electric aircraft |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116008768A (en)* | 2023-03-24 | 2023-04-25 | 杭州飞仕得科技股份有限公司 | Conduction voltage drop test circuit and junction temperature tester |
| CN117176121A (en)* | 2023-11-02 | 2023-12-05 | 成都沃飞天驭科技有限公司 | Electronic switch driving circuit, control method and electric aircraft |
| CN117176121B (en)* | 2023-11-02 | 2024-02-23 | 成都沃飞天驭科技有限公司 | Electronic switch driving circuit, control method and electric aircraft |
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