CN115602636A - A three-dimensional hermetic packaging structure and packaging method - Google Patents
A three-dimensional hermetic packaging structure and packaging methodDownload PDFInfo
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及微电子封装技术领域，具体涉及一种三维气密封装结构及封装方法。The invention relates to the technical field of microelectronic packaging, in particular to a three-dimensional hermetic packaging structure and packaging method.
背景技术Background technique
小型化、多功能化和高性能化是电子系统发展的重要方向，基于系统级封装(SiP，System in Package)的三维集成技术是实现电子系统小型化和多功能化的重要途径。该技术强调使用转接板、封装基板，在三维方向实现芯片的堆叠，将多种芯片、器件和无源元件集成在一个封装体内，使综合集成密度更高。其中，陶瓷封装SiP同时具备高集成度和气密性的特点，是应用最广泛的高可靠封装结构。然而，传统陶瓷封装SiP的信号互连接口都集中在底面，不能满足射频阵列垂直方向信号高密度、低损耗传输的需求，限制了系统集成密度的提升。Miniaturization, multi-function and high-performance are important directions for the development of electronic systems, and the three-dimensional integration technology based on System in Package (SiP, System in Package) is an important way to realize the miniaturization and multi-function of electronic systems. This technology emphasizes the use of adapter boards and packaging substrates to realize chip stacking in three-dimensional directions, and integrates multiple chips, devices and passive components into one package, making the overall integration density higher. Among them, the ceramic package SiP has the characteristics of high integration and airtightness at the same time, and is the most widely used high-reliability package structure. However, the signal interconnection interfaces of the traditional ceramic package SiP are all concentrated on the bottom surface, which cannot meet the requirements of high-density and low-loss transmission of signals in the vertical direction of the RF array, and limits the improvement of system integration density.
中国专利202210032539.X提出了一种双面可集成互连接口的陶瓷封装结构，该封装的底板和盖板均为陶瓷封装基板，封装基板之间通过金属微柱实现互连，封装的上下两个外表面均为BGA接口，实现电气信号的纵向垂直传输；同时底板和盖板之间通过焊接金属围框实现SiP的气密封装。这种封装结构的实现难点在于：为满足封装内底板和盖板上芯片安装需求，围框和金属微柱的高度应至少达到毫米量级，同时多个金属微柱之间应具备极高的高度一致性，才能实现垂直方向的可靠互连与封装气密。然而，202210032539.X提出使用电镀工艺加工围框和金属微柱，高的围框/金属微柱需要通过多次厚胶光刻然后电镀的方式实现，一方面多次厚胶光刻的工艺难度高，易出现套刻偏差等问题；另一方面电镀围框/金属微柱与陶瓷封装基板之间严重的热失配将影响整体结构的可靠性，因此，电镀工艺加工的围框/金属微柱高度受限。Chinese patent 202210032539.X proposes a double-sided ceramic package structure that can integrate interconnection interfaces. The bottom plate and cover plate of the package are both ceramic package substrates. The two outer surfaces are all BGA interfaces, which realize the longitudinal and vertical transmission of electrical signals; at the same time, the airtight packaging of SiP is realized by welding the metal frame between the bottom plate and the cover plate. The difficulty in realizing this package structure lies in: in order to meet the chip mounting requirements on the inner bottom and cover of the package, the height of the surrounding frame and metal micropillars should be at least on the order of millimeters. Only with a high degree of consistency can reliable interconnection and packaging airtightness in the vertical direction be achieved. However, 202210032539.X proposes to use the electroplating process to process the frame and metal micro-pillars. The high frame/metal micro-pillars need to be realized by multiple thick photolithography and then electroplating. On the one hand, the process of multiple thick photolithography is difficult High, prone to problems such as overlay deviation; on the other hand, the serious thermal mismatch between the electroplating frame/metal micropillar and the ceramic packaging substrate will affect the reliability of the overall structure. Therefore, the electroplating process Column height is limited.
针对上述这些问题，现有技术尚未给出解决方案。故需要提出更为合理的技术方案，解决现有技术中存在的技术问题。For the above-mentioned problems, the prior art has not yet provided a solution. Therefore, it is necessary to propose a more reasonable technical solution to solve the technical problems existing in the prior art.
发明内容Contents of the invention
至少为克服其中一种上述内容提到的缺陷，本发明提出一种三维气密封装结构及封装方法，通过对封装基板之间的封装围框和微柱的配合进行改进，提高封装的精密度和气密效果，简化了封装的工艺过程。In order to overcome at least one of the defects mentioned above, the present invention proposes a three-dimensional hermetic packaging structure and packaging method, by improving the cooperation between the packaging frame and the micro-pillars between the packaging substrates, the precision of the packaging is improved And the airtight effect simplifies the packaging process.
为了实现上述目的，本发明公开的封装结构可采用如下技术方案：In order to achieve the above purpose, the packaging structure disclosed in the present invention can adopt the following technical solutions:
一种三维气密封装结构，包括：A three-dimensional hermetic packaging structure, comprising:
相对设置的顶部封装基板和底部封装基板，顶部封装基板与底部封装基板的相对面上均设置有芯片模组，且顶部封装基板与底部封装基板的相背面均设置有互连接口；The top packaging substrate and the bottom packaging substrate are arranged oppositely, chip modules are arranged on the opposite surfaces of the top packaging substrate and the bottom packaging substrate, and interconnection ports are provided on the opposite surfaces of the top packaging substrate and the bottom packaging substrate;
设置于顶部封装基板与底部封装基板之间以形成气密结构的组合围框结构，组合围框结构包括对应设置于顶部封装基板与底部封装基板上且相对配合的限位件和围框件，限位件与围框件的相对配合面设置有对位配合结构；The combined surrounding frame structure is arranged between the top packaging substrate and the bottom packaging substrate to form an airtight structure. The combined surrounding frame structure includes a limiting member and a surrounding frame that are correspondingly arranged on the top packaging substrate and the bottom packaging substrate and are relatively matched. The relative mating surface of the limiting part and the surrounding frame part is provided with an alignment fitting structure;
设置于顶部封装基板与底部封装基板之间的微柱结构，包括导通配合的微柱体与微焊球，所述的微柱体与微焊球导通顶部封装基板与底部封装基板。The microcolumn structure arranged between the top packaging substrate and the bottom packaging substrate includes conductively matched microcolumns and micro solder balls, and the microcolumns and micro solder balls conduct the top packaging substrate and the bottom packaging substrate.
上述公开的三维气密封装结构，通过组合围框结构将顶部封装基板与底部封装基板对位配合的形式形成精确的对正，提高了安装的精度；同时在顶部封装基板与底部封装基板之间设置的微柱结构能够实现导通，并且微柱结构的高度与组合围框结构的高度相同，有利于顶部封装基板与底部封装基板在对位配合后保持良好的接触密封。采用本发明公开的这种气密封装结构，可整体装配后进行同步焊接密封，避免了精密焊接对尺寸要求高、难以保证焊接质量的需求，能够同步进行加热焊接处理，实现整个气密封装结构的成型。The three-dimensional hermetic packaging structure disclosed above forms precise alignment in the form of matching the top packaging substrate and the bottom packaging substrate through the combined frame structure, which improves the accuracy of installation; at the same time, between the top packaging substrate and the bottom packaging substrate The provided micro-column structure can realize conduction, and the height of the micro-column structure is the same as that of the combined surrounding frame structure, which is conducive to maintaining good contact and sealing between the top packaging substrate and the bottom packaging substrate after alignment. Adopting the airtight packaging structure disclosed in the present invention, it can be welded and sealed synchronously after the overall assembly, which avoids the requirement of precision welding for high size and difficulty in guaranteeing welding quality, and can simultaneously perform heating and welding treatment to realize the entire airtight packaging structure molding.
进一步的，本发明中将芯片模组设置于封装腔体内，并进行防干扰屏蔽处理，可通过多种方式实现芯片的防干扰，此处不进行唯一限定，并优化举出其中一种可行的选择：所述的芯片模组包括芯片，和将芯片焊接至顶部封装基板或底部封装基板的芯片焊层，以及将芯片罩住以屏蔽干扰的屏蔽件，所述的屏蔽件件与芯片之间形成气隙。采用如此方案时，顶部封装基板和底部封装基板均设置芯片，芯片通过芯片焊层连接固定；且屏蔽件为盖状的罩体，其通过焊料连接固定至芯片外侧并进行封罩。Furthermore, in the present invention, the chip module is placed in the packaging cavity, and the anti-interference shielding process is performed, and the anti-interference of the chip can be realized in various ways. There is no unique limitation here, and one of the feasible ones is optimized. Option: the chip module includes a chip, and a chip welding layer for soldering the chip to the top package substrate or the bottom package substrate, and a shield to cover the chip to shield interference, between the shield and the chip Air gaps are formed. When adopting such a solution, both the top packaging substrate and the bottom packaging substrate are provided with chips, and the chips are connected and fixed through the chip soldering layer; and the shielding member is a cover-shaped cover, which is connected and fixed to the outside of the chip by solder and sealed.
进一步的，在本发明中，对位配合结构用以将围框件和限位件对正，使围框件能够在顶部封装基板和底部封装基板处围成封闭的空腔，对位配合结构可采用的方案并不被唯一限定，此处进行优化并举出其中一种可行的选择：所述的对位配合结构包括凹陷结构与凸起结构，当限位件与围框件对正配合时，凹陷结构与凸起结构卡紧贴合；且凹陷结构与凸起结构之间还设置有气密连接层。采用如此方案时，凹陷结构与凸起结构形成Z字形、V形或锯齿形的拼合面，通过拼合面的精确配合，能够将顶部封装基板与底部封装基板快速对正，既保障了连接的准确性，又保障了连接的效率。Further, in the present invention, the alignment fit structure is used to align the surrounding frame parts and the limit parts, so that the surrounding frame parts can form a closed cavity at the top package substrate and the bottom package substrate, and the position fit structure The available solutions are not limited exclusively, here is an optimization and one of the feasible options is given: the alignment fit structure includes a concave structure and a convex structure, when the limiter and the surrounding frame are aligned and fitted , the recessed structure and the protruding structure are tightly fitted; and an airtight connection layer is also provided between the recessed structure and the protruding structure. When such a solution is adopted, the concave structure and the convex structure form a Z-shaped, V-shaped or zigzag splicing surface. Through the precise fit of the splicing surface, the top packaging substrate and the bottom packaging substrate can be quickly aligned, which not only ensures the accuracy of the connection sex, but also to ensure the efficiency of the connection.
进一步的，为了更加稳定的设置组合围框结构，此处将安装结构进行优化设置并举出其中一种可行的选择：所述的底部封装基板上对应组合围框结构设置有连接导通座。采用如此方案时，连接导通座与组合围框结构之间可通过焊料进行密封连接。Further, in order to more stably set up the combined surrounding frame structure, the installation structure is optimized here and one of the feasible options is given: the bottom packaging substrate is provided with a connecting conduction seat corresponding to the combined surrounding frame structure. When such a solution is adopted, the connection between the conducting seat and the combined surrounding frame structure can be sealed and connected by solder.
进一步的，微柱体用于导通顶部封装基板与底部封装基板，其可采用的方案并不被唯一限定，此处进行优化并举出其中一种可行的选择：所述的微柱体从底部封装基板向顶部封装基板延伸，微焊球与微柱体的顶端连接配合。Further, the micro-pillars are used to connect the top packaging substrate and the bottom packaging substrate, and the schemes that can be adopted are not limited. Here, one of the feasible options is optimized and listed: the micro-pillars are connected from the bottom The packaging substrate extends toward the top packaging substrate, and the micro-solder balls are connected and matched with the tops of the micro-columns.
再进一步，此处对微柱结构的设置方式进行优化并举出其中一种可行的选择：所述的顶部封装基板与底部封装基板上均设置有连接导通座，微柱体与微焊球通过连接导通座将顶部封装基板与底部封装基板导通。采用如此方案时，微柱体与连接导通座连接固定后可实现信号的导通。Further, here we optimize the arrangement of the micro-column structure and give one of the feasible options: the top packaging substrate and the bottom packaging substrate are provided with connection vias, and the micro-pillars and micro-solder balls pass through The connection via seat conducts the top packaging substrate and the bottom packaging substrate. When such a solution is adopted, the conduction of the signal can be realized after the micro-column is connected and fixed with the connection conduction seat.
上述内容对气密封装结构进行了说明，本发明还公开了实现该气密封装的方案，现进行说明。The above content has described the hermetic packaging structure, and the present invention also discloses a scheme for realizing the hermetic packaging, which is now described.
一种三维气密封装方法，用于制备上述内容所述的气密封装结构，包括：A three-dimensional hermetic packaging method for preparing the hermetic packaging structure described above, comprising:
在顶部封装基板与底部封装基板上对应设置连接导通座；Correspondingly setting connection conduction seats on the top packaging substrate and the bottom packaging substrate;
分别在顶部封装基板与底部封装基板上对应设置限位件与围框件，其中围框件与微柱结构同步设置且端面齐平，并在限位件和/或围框件的相对配合面上设置气密焊料层；The top packaging substrate and the bottom packaging substrate are correspondingly provided with a limiter and a frame member, wherein the frame member and the micro-column structure are arranged synchronously and the end faces are flush, and on the relative mating surface of the limiter and/or the frame member An airtight solder layer is set on it;
将微焊球固定至微柱体的端面上；Fixing the micro-solder balls to the end faces of the micro-pillars;
并至少将芯片对应连接固定于顶部封装基板和底部封装基板；And at least correspondingly connecting and fixing the chip to the top packaging substrate and the bottom packaging substrate;
将限位件与围框件的相对配合面对正拼合，从顶部封装基板上端面进行加热加压进行气密焊接，同步使微柱结构焊接导通顶部封装基板与底部封装基板，在焊接过程中对封装腔体内抽真空。The relative mating surfaces of the limiter and the surrounding frame are assembled positively, and the upper end surface of the top package substrate is heated and pressurized for airtight welding, and the micro-column structure is welded to conduct the top package substrate and the bottom package substrate simultaneously. During the welding process Vacuum the inside of the packaging cavity.
上述公开的封装方法，对顶部封装基板与底部封装基板的组合围框结构进行设定后可用于对正限位配合；围框件与微柱结构的同步设置能够保持二者的端面齐平，有利于在设置气密结构的过程中提高精度。上述封装方法，在顶部封装基板与底部封装基板拼合后整体加热实现连接，避免了采用激光等逐点焊接的方式造成的局部温差所带来的应力影响封装结构的可靠性。The packaging method disclosed above can be used for alignment and positioning after setting the combined frame structure of the top package substrate and the bottom package substrate; the synchronous setting of the frame and the micro-pillar structure can keep the end faces of the two flush, It is beneficial to improve the precision in the process of setting the airtight structure. In the above-mentioned packaging method, after the top packaging substrate and the bottom packaging substrate are joined together, they are heated as a whole to realize the connection, which avoids the stress caused by the local temperature difference caused by point-by-point welding such as lasers from affecting the reliability of the packaging structure.
进一步的，本发明在制备围框件与微柱体时，将二者同步进行制备，并在连接后分离，具体进行优化并举出如下一种可行的方式：采用减材法从一块平板材料上加工处理得到围框件与微柱体的连接整体，平板材料的一个平面作为围框件与微柱体的端面；在围框件与微柱体的连接处设置可去除的工艺线结构，当围框件与微柱体连接固定至顶部封装基板或底部封装基板后，去除工艺线结构以使围框件与微柱体分离。采用如此方案时，围框件与微柱体作为整体进行加工，在进行连接固定后能够保持一致的连接高度，便于顶部封装基板与底部封装基板的连接固定，在连接后可保持顶部封装基板与底部封装基板的尺寸精密度。Further, when the present invention prepares the surrounding frame and the micro-column, the two are prepared synchronously and separated after connection, specifically optimized and the following feasible method is given: using the subtractive method from a flat plate material Process to obtain the whole connection between the frame piece and the micro-pillar, a plane of the flat material is used as the end face of the frame piece and the micro-pillar; a removable process line structure is set at the connection between the frame piece and the micro-pillar, when After the frame member is connected and fixed to the top package substrate or the bottom package substrate, the process line structure is removed to separate the frame member from the micro column. When such a solution is adopted, the surrounding frame and the micro-pillar are processed as a whole, and a consistent connection height can be maintained after connection and fixing, which is convenient for the connection and fixing of the top packaging substrate and the bottom packaging substrate, and the top packaging substrate and the bottom packaging substrate can be maintained after connection. Dimensional precision of the bottom package substrate.
进一步的，为了更好的进行气密性焊接，对围框件与微柱结构的表面进行加工处理，此处进行优化并举出其中一种可行的选择：在加工出围框件与微柱体后，对围框件和微柱体的外表面分别设置镀层。再进一步，对于芯片模组的设置顺序并不唯一限定，例如在一些方案中可将芯片和屏蔽件同时设定，在一些方案中则可分开设置，此处进行优化并举出其中一种可行的选择：在设置完限位件与围框件之后，再设置屏蔽件并将芯片罩住。Further, in order to better carry out airtight welding, the surface of the surrounding frame and the micro-column structure is processed. Here, an optimization is carried out and one of the feasible options is given: after processing the surrounding frame and the micro-column Finally, coatings are respectively provided on the outer surfaces of the surrounding frame and the micro-pillar. Furthermore, there is no unique limitation on the arrangement order of the chip modules. For example, in some schemes, the chip and the shield can be set at the same time, and in some schemes, they can be set separately. Here we will optimize and cite one of the feasible Choice: After setting the limit piece and the frame piece, set up the shielding piece and cover the chip.
与现有技术相比，本发明公开技术方案的部分有益效果包括：Compared with the prior art, some beneficial effects of the technical solutions disclosed in the present invention include:
本发明通过共同制备围框件与微柱体结构，二者的尺寸控制更为精确，高度一致性可控制在微米量级，满足封装内上下两面均集成芯片的互连高度以及封装气密性的要求。通过限位件与围框件之间的相对配合面结构，提高了顶部封装基板与底部封装基板的对位效率，避免了繁琐的高精度对位操作。本发明提供的封装结构精度高，封装工序简单，操作灵活方便。In the present invention, by co-preparing the surrounding frame and the micro-pillar structure, the size control of the two is more precise, and the height consistency can be controlled at the micron level, which satisfies the interconnection height of integrated chips on the upper and lower sides of the package and the airtightness of the package. requirements. The alignment efficiency between the top packaging substrate and the bottom packaging substrate is improved through the relative mating surface structure between the limiting member and the surrounding frame member, and tedious high-precision alignment operations are avoided. The packaging structure provided by the invention has high precision, simple packaging process and flexible and convenient operation.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅表示出了本发明的部分实施例，因此不应看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它相关的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some of the embodiments of the present invention, and therefore should not As a limitation of the scope, those skilled in the art can also obtain other related drawings based on these drawings without creative work.
图1为顶部封装基板处的结构示意图。FIG. 1 is a schematic diagram of the structure at the top package substrate.
图2为底部封装基板处的结构示意图。FIG. 2 is a schematic diagram of the structure at the bottom package substrate.
图3为顶部封装基板与底部封装基板对正时的结构示意图。FIG. 3 is a structural schematic diagram of the alignment of the top packaging substrate and the bottom packaging substrate.
图4为顶部封装基板与底部封装基板对正焊接后的结构示意图。FIG. 4 is a structural schematic diagram of the top packaging substrate and the bottom packaging substrate after being aligned and welded.
图5为顶部封装基板与底部封装基本焊接处的局部结构示意图。FIG. 5 is a schematic diagram of a partial structure of the basic solder joint between the top package substrate and the bottom package.
图6为进行封装的过程示意图。Fig. 6 is a schematic diagram of the encapsulation process.
上述附图中，各个标号的含义为：In the above drawings, the meanings of each label are:
1、顶部封装基板；2、连接导通座；3、限位件；4、气密焊接层；5、芯片焊层；6、芯片；7、屏蔽件；8、底部封装基板；9、围框件；10、微柱体；11、微焊球。1. Top packaging substrate; 2. Connecting conduction seat; 3. Limiting parts; 4. Airtight soldering layer; 5. Chip soldering layer; 6. Chip; Frame; 10, micro cylinder; 11, micro solder ball.
具体实施方式detailed description
下面结合附图及具体实施例对本发明做进一步阐释。The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.
针对现有技术中封装芯片存在的高精度对位工序繁琐，封装效果不理想的情况，下列实施例进行优化并克服现有技术中存在的问题。In view of the cumbersome high-precision alignment process and unsatisfactory packaging effect of packaged chips in the prior art, the following embodiments are optimized and overcome the problems in the prior art.
实施例1Example 1
如图1～图5所示，本实施例提供一种三维气密封装结构，旨在对封装机构的对位精度进行提高，确保气密封装的可靠性，同时提高对位封装的便捷度。As shown in FIGS. 1 to 5 , this embodiment provides a three-dimensional hermetic packaging structure, which aims to improve the alignment accuracy of the packaging mechanism, ensure the reliability of the hermetic packaging, and improve the convenience of alignment packaging.
作为本实施例提供的气密封装结构，其结构之一包括：As the hermetic packaging structure provided in this embodiment, one of the structures includes:
相对设置的顶部封装基板1和底部封装基板8，顶部封装基板1与底部封装基板8的相对面上均设置有芯片模组，且顶部封装基板1与底部封装基板8的相背面均设置有互连接口。The top packaging substrate 1 and the bottom packaging substrate 8 are arranged oppositely, chip modules are arranged on the opposite surfaces of the top packaging substrate 1 and the bottom packaging substrate 8, and the opposite surfaces of the top packaging substrate 1 and the bottom packaging substrate 8 are provided with mutual Connector.
优选的，在本实施例中，互连接口采用BGA接口。Preferably, in this embodiment, the interconnection interface adopts a BGA interface.
顶部封装基板1与底部封装基板8可采用陶瓷封装基板。The top packaging substrate 1 and the bottom packaging substrate 8 can be ceramic packaging substrates.
本实施例中将芯片模组设置于封装腔体内，并进行防干扰屏蔽处理，可通过多种方式实现芯片的防干扰，本实施例并不进行唯一限定，优化并采用其中一种可行的选择：所述的芯片模组包括芯片6，和将芯片6焊接至顶部封装基板1或底部封装基板8的芯片焊层5，以及将芯片6罩住以屏蔽干扰的屏蔽件7，所述的屏蔽件7件与芯片6之间形成气隙。采用如此方案时，顶部封装基板1和底部封装基板8均设置芯片6，芯片6通过芯片焊层5连接固定；且屏蔽件7为盖状的罩体，其通过焊料连接固定至芯片6外侧并进行封罩。In this embodiment, the chip module is placed in the packaging cavity, and the anti-interference shielding process is performed. The anti-interference of the chip can be realized in various ways. This embodiment does not limit it exclusively, and optimizes and adopts one of the feasible options. : the chip module includes a
优选的，本实施例中采用的芯片焊层5包括纳米银烧结形成的结构。Preferably, the
作为本实施例提供的气密封装结构，其结构之二包括：As the hermetic packaging structure provided in this embodiment, the second structure includes:
设置于顶部封装基板1与底部封装基板8之间以形成气密结构的组合围框结构，组合围框结构包括对应设置于顶部封装基板1与底部封装基板8上且相对配合的限位件3和围框件9，限位件3与围框件9的相对配合面设置有对位配合结构。The combined surrounding frame structure is arranged between the top packaging substrate 1 and the bottom packaging substrate 8 to form an airtight structure. The combined surrounding frame structure includes a
优选的，本实施例中的围框件9设置于底部封装基板8，限位件3设置于顶部封装基板1。且限位件3与围框件9的相对配合面形成台阶状结构。Preferably, the
优选的，在本发明中，对位配合结构用以将围框件9和限位件3对正，使围框件9能够在顶部封装基板1和底部封装基板8处围成封闭的空腔，对位配合结构可采用的方案并不被唯一限定，本实施例进行优化并采用其中一种可行的选择：所述的对位配合结构包括凹陷结构与凸起结构，当限位件3与围框件9对正配合时，凹陷结构与凸起结构卡紧贴合；且凹陷结构与凸起结构之间还设置有气密连接层。采用如此方案时，凹陷结构与凸起结构形成Z字形、V形或锯齿形的拼合面，通过拼合面的精确配合，能够将顶部封装基板1与底部封装基板8快速对正，既保障了连接的准确性，又保障了连接的效率。Preferably, in the present invention, the alignment fit structure is used to align the
优选的，在本实施例中将凹陷结构与凸起结构配合组成台阶状，从而实现对正定位。Preferably, in this embodiment, the concave structure and the convex structure are matched to form a stepped shape, so as to realize alignment and positioning.
在本实施例中，气密连接层为焊料层，在进行加热加压处理后将相对配合面进行焊接并密封。该气密连接层采用Au80Sn20作为连接焊料。In this embodiment, the airtight connection layer is a solder layer, and after heat and pressure treatment, the mating surfaces are welded and sealed. The airtight connection layer uses Au80Sn20 as the connection solder.
本实施例中，为了更加稳定的设置组合围框结构，将安装结构进行优化设置并采用其中一种可行的选择：所述的底部封装基板8上对应组合围框结构设置有连接导通座2。采用如此方案时，连接导通座2与组合围框结构之间可通过焊料进行密封连接。In this embodiment, in order to set up the combined surrounding frame structure more stably, the installation structure is optimized and one of the feasible options is adopted: the corresponding combined surrounding frame structure on the bottom packaging substrate 8 is provided with a connecting
优选的，连接导通座2与组合围框结构之间的焊料可采用Au80Sn20合金材料。Preferably, Au80Sn20 alloy material can be used as the solder connecting the
作为本实施例提供的气密封装结构，其结构之三包括：As the hermetic packaging structure provided in this embodiment, the third structure includes:
设置于顶部封装基板1与底部封装基板8之间的微柱结构，包括导通配合的微柱体10与微焊球11，所述的微柱体10与微焊球11导通顶部封装基板1与底部封装基板8。The microcolumn structure disposed between the top package substrate 1 and the bottom package substrate 8 includes microcolumns 10 and
微柱体10用于导通顶部封装基板1与底部封装基板8，其可采用的方案并不被唯一限定，本实施例进行优化并采用其中一种可行的选择：所述的微柱体10从底部封装基板8向顶部封装基板1延伸，微焊球11与微柱体10的顶端连接配合。The
优选的，本实施例对微柱结构的设置方式进行优化并采用其中一种可行的选择：所述的顶部封装基板1与底部封装基板8上均设置有连接导通座2，微柱体10与微焊球11通过连接导通座2将顶部封装基板1与底部封装基板8导通。采用如此方案时，微柱体10与连接导通座2连接固定后可实现信号的导通。Preferably, this embodiment optimizes the setting method of the micro-column structure and adopts one of the feasible options: the top packaging substrate 1 and the bottom packaging substrate 8 are both provided with a connecting
优选的，在本实施例中围框件9与微柱体10均采用金属材料制成，且高度为1mm～2mm，围框件9与微柱体10的端面平面度误差小于5μm。Preferably, in this embodiment, both the
优选的，在本实施例中，所述微焊球11直径大于等于微柱体10的直径，所述微焊球11直径与限位件3(含焊料层)的配合要求为：计微焊球11预置在微柱体10上表面后，微焊球11顶面距离微柱体10上表面的距离为H1，顶部封装基板1上导通连接座的厚度为H2，限位件3所有台阶表面距离第一焊接面的最大距离为D1，最小距离为D2，则D1>H1+H2>D2。Preferably, in this embodiment, the diameter of the
上述公开的三维气密封装结构，通过组合围框结构将顶部封装基板1与底部封装基板8对位配合的形式形成精确的对正，提高了安装的精度；同时在顶部封装基板1与底部封装基板8之间设置的微柱结构能够实现导通，并且微柱结构的高度与组合围框结构的高度相同，有利于顶部封装基板1与底部封装基板8在对位配合后保持良好的接触密封。采用本实施例公开的这种气密封装结构，可整体装配后进行同步焊接密封，避免了精密焊接对尺寸要求高、难以保证焊接质量的需求，能够同步进行加热焊接处理，实现整个气密封装结构的成型。The three-dimensional hermetic packaging structure disclosed above forms precise alignment in the form of matching the top packaging substrate 1 and the bottom packaging substrate 8 through the combined frame structure, which improves the accuracy of installation; at the same time, the top packaging substrate 1 and the bottom packaging substrate 8 The micro-column structure arranged between the substrates 8 can realize conduction, and the height of the micro-column structure is the same as that of the combined frame structure, which is conducive to maintaining a good contact seal between the top packaging substrate 1 and the bottom packaging substrate 8 after alignment. . With the hermetic package structure disclosed in this embodiment, synchronous welding and sealing can be performed after overall assembly, which avoids the requirement of high size requirements and difficulty in ensuring welding quality for precision welding, and can simultaneously perform heating and welding processes to realize the entire hermetic package. The shaping of the structure.
实施例2Example 2
上述实施例的内容对气密封装结构进行了说明，本实施例还公开了实现该气密封装的方案，现进行说明。The contents of the above-mentioned embodiments have described the hermetic packaging structure, and this embodiment also discloses a scheme for realizing the hermetic packaging, which is now described.
如图6所示，一种三维气密封装方法，用于制备上述内容所述的气密封装结构，包括如下步骤：As shown in Figure 6, a three-dimensional hermetic packaging method is used to prepare the hermetic packaging structure described above, including the following steps:
S01：在顶部封装基板1与底部封装基板8上对应设置连接导通座2。S01: Correspondingly arrange the
S02：分别在顶部封装基板1与底部封装基板8上对应设置限位件3与围框件9，其中围框件9与微柱结构同步设置且端面齐平，并在限位件3和/或围框件9的相对配合面上设置气密焊料层。S02: Correspondingly set the
具体的，在设置限位件3时采用如下步骤：Specifically, the following steps are adopted when setting the limiter 3:
S021：在顶部封装基板1的焊接面沿周边位置，通过厚胶光刻结合电镀的方法设置限位件3。S021: At the position along the periphery of the soldering surface of the top packaging substrate 1 , set the
S022：在限位件3的相对配合面上通过微缝焊、电镀或蒸发的方法设置Au80Sn20焊料以作为气密连接层，所述气密连接层的厚度为5μm～20μm。S022: Au80Sn20 solder is provided on the opposite mating surface of the limiting
S03：将微焊球11固定至微柱体10的端面上。S03: fixing the
优选的，采用激光植球工艺在所有微柱体10的上表面预置微焊球11。Preferably,
S04：将芯片6对应连接固定于顶部封装基板1和底部封装基板8。S04: Correspondingly connecting and fixing the
对于芯片模组的设置顺序并不唯一限定，例如在一些方案中可将芯片6和屏蔽件7同时设定，在一些方案中则可分开设置，本实施例进行优化并采用其中一种可行的选择：在设置完限位件3与围框件9之后，再设置屏蔽件7并将芯片6罩住。There is no unique limitation on the arrangement order of the chip module. For example, in some schemes, the
优选地，所述芯片与屏蔽框的安装方式为纳米银烧接。Preferably, the installation method of the chip and the shielding frame is nano-silver burning.
完成芯片6的安装后，通过纳米银烧结工艺安装屏蔽件7，屏蔽件7被构造为盖状以将芯片6盖住。After the installation of the
S05：将限位件3与围框件9的相对配合面对正拼合，从顶部封装基板1上端面进行加热加压进行气密焊接，同步使微柱结构焊接导通顶部封装基板1与底部封装基板8，在焊接过程中对封装腔体内抽真空。S05: The relative mating surfaces of the
在S05的过程中，限位件3与围框件9通过堆叠焊接形成三维气密封装结构。In the process of S05, the limiting
优选的，本实施例在制备围框件9与微柱体10时，将二者同步进行制备，并在连接后分离，具体进行优化并采用如下一种可行的方式：采用减材法从一块平板材料上加工处理得到围框件9与微柱体10的连接整体，平板材料的一个平面作为围框件9与微柱体10的端面；在围框件9与微柱体10的连接处设置可去除的工艺线结构，当围框件9与微柱体10连接固定至顶部封装基板1或底部封装基板8后，去除工艺线结构以使围框件9与微柱体10分离。采用如此方案时，围框件9与微柱体10作为整体进行加工，在进行连接固定后能够保持一致的连接高度，便于顶部封装基板1与底部封装基板8的连接固定，在连接后可保持顶部封装基板1与底部封装基板8的尺寸精密度。Preferably, in this embodiment, when preparing the surrounding
在进行围框件9与微柱体10的制备时，具体包括如下过程：When carrying out the preparation of surrounding
S051：提供一块完成研磨抛光的金属平板进行围框件9与微柱体10的加工材料，所述金属平板的厚度为1-2mm，等于围框件9和微柱体10的高度。S051: Provide a ground and polished metal plate for processing materials of the
S052；通过水导激光切割法从金属平板上表面开始去除围框件9和微柱体10之间多余的材料，至距离底面厚度0.3mm时加工工艺线，工艺线在金属平板的下表面连接围框件9以及所有微柱体10。S052; Remove excess material between the
S053：通过水导激光切割法从金属平板的下表面开始加工围框件9。S053: Process the
S054：在围框件9和微柱体10复合结构的外表面依次设置4-8μm的Ni镀层和和1-2μm的Au镀层。S054: sequentially arrange a 4-8 μm Ni plating layer and a 1-2 μm Au plating layer on the outer surface of the composite structure of the surrounding
优选的，使用钢网印刷或蒸发的方法在底部封装基板8的焊接面上设置焊料作为气密连接层，焊料为Au80Sn20合金，用于连接围框件9与微柱体10。Preferably, the welding surface of the bottom package substrate 8 is provided with solder as an airtight connection layer by stencil printing or evaporation, and the solder is Au80Sn20 alloy for connecting the surrounding
优选的，使用真空共晶焊或真空回流焊将围框件9和微柱体10的复合结构焊接在底部封装基板8的焊接面上，焊接过程中使用平板结构的压块放置在围框件9和微柱体10的表面，工艺线同时起到均匀应力，保证焊接后围框与金属微柱高度一致性的作用。Preferably, vacuum eutectic welding or vacuum reflow soldering is used to weld the composite structure of the
优选的，在完成围框件9与微柱体10的连接固定后，使用水导激光切割法去除工艺线。Preferably, after the connection and fixation of the surrounding
上述公开的封装方法，对顶部封装基板1与底部封装基板8的组合围框结构进行设定后可用于对正限位配合；围框件9与微柱结构的同步设置能够保持二者的端面齐平，有利于在设置气密结构的过程中提高精度。上述封装方法，在顶部封装基板1与底部封装基板8拼合后整体加热实现连接，避免了采用逐点焊接的方式造成的局部温差影响封装结构的可靠性。The packaging method disclosed above can be used for alignment and limit cooperation after setting the combined frame structure of the top package substrate 1 and the bottom package substrate 8; the synchronous setting of the
以上即为本实施例列举的实施方式，但本实施例不局限于上述可选的实施方式，本领域技术人员可根据上述方式相互任意组合得到其他多种实施方式，任何人在本实施例的启示下都可得出其他各种形式的实施方式。上述具体实施方式不应理解成对本实施例的保护范围的限制，本实施例的保护范围应当以权利要求书中界定的为准。The above is the implementation manners listed in this embodiment, but this embodiment is not limited to the above optional implementation manners, and those skilled in the art can obtain other various implementation manners according to the above-mentioned manners combined with each other arbitrarily, anyone in this embodiment Various other forms of implementation can be drawn under the inspiration. The above specific implementation manners should not be understood as limiting the protection scope of this embodiment, and the protection scope of this embodiment should be defined in the claims.
Claims (10)
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