技术领域Technical Field
本发明涉及半导体光学谐振腔领域，尤其涉及一种金属包裹的非对称光学谐振腔。The invention relates to the field of semiconductor optical resonant cavities, and in particular to an asymmetric optical resonant cavity wrapped with metal.
背景技术Background Art
作为二维光学限制的半导体谐振腔之一，回音壁模式光学微腔通过光的连续的全内反射，在腔体内产生光学谐振现象，所限制的光学模式具有较高的品质因子(Q)以及较小的模式体积，能够大大增强光与物质之间的相互作用，降低激光器的阈值[参看文献K.J.Vahala,“optical microcavities”,Nature(London)424,839(2003).]。然而，由于模式竞争作用，高Q值的谐振模式能够首先获得泵浦激射，回音壁模微激光器往往表现出单个模式或者仅有少娄几个模式的特征，因此，采用回音壁模腔作为光学谐振腔的激光器相干性好，相反，却难以获得低相干的多模激光器。As one of the two-dimensional optically confined semiconductor resonant cavities, the whispering gallery mode optical microcavity generates optical resonance in the cavity through continuous total internal reflection of light. The confined optical mode has a high quality factor (Q) and a small mode volume, which can greatly enhance the interaction between light and matter and reduce the threshold of the laser [see K.J.Vahala, "optical microcavities", Nature (London) 424, 839 (2003).]. However, due to mode competition, the resonant mode with a high Q value can obtain pump lasing first, and the whispering gallery mode microlaser often exhibits the characteristics of a single mode or only a few modes. Therefore, the laser using the whispering gallery mode cavity as the optical resonant cavity has good coherence, but on the contrary, it is difficult to obtain a low-coherence multi-mode laser.
传统的可见光激光器具有高相干性、单色性以及光能量集中的特点，但由于干涉散斑的存在限制了它们在光学照明和投影的应用。相反，传统的半导体低相干光源，如基于半导体材料氮化镓的(GaN)发光二极管(Light emitting diode)，在照明领域具有广泛的应用，但亮度相对较低，光源集中度差，这些特点导致难以获得高速成像和粗糙界面的成像。近年来，针对半导体发光二极管光源的低相干性，但亮度低的特点，以及回音壁模腔激光器亮度强，高相干性但易形成散斑的缺陷，耶鲁大学的Cao Hui等人2015年提出了采用二维D形谐振腔构建高密度模式激射的半导体激光器，(参看文献B.Redding et al.,“Lowspatial coherence electrically pumped semiconductor laser for speckle-freefull-field imaging,”Proc.Natl Acad.Sci.USA,vol.112,no.5,no.1304-1309,Feb2015)，在500μm直径的D形谐振腔中制备了镓砷半导体激光器，观察到包含约1000个模式的激光，既提高了光源的亮度，同时由于多模式激光之间的干涉，降低了激光器的相干性，缺点就是由于腔谐振模式Q值低，器件阈值高，且只能在脉冲泵浦下实现激射。低相干光源除在在照明领域的应用外，在高速物理随机数产生，保密通讯等领域也具有广泛的应用。文献(A.Uchida,et al.,“Fast physical random bit generation with chaoticsemiconductor lasers”Nat.Photon.2,728(2008).)提出采用外腔反馈的方法，在单模DFB激光器的基础上，获得窄带宽的混沌激光器。由于激光线宽在GHz量级，因此随机数产生速率受限制，为了进一步提高物理随机数产生速率，文献[K.Kim,et al.,“Massivelyparallel ultrafast random bit generation with a chip-scale laser,”Science,vol.371,no.6532,pp.948-952,Feb 2021.]提出采用二维变形腔作为谐振腔获得低相干光源，同时基于多路的输出，获得THz速率的高速随机数。然而，在上述方案中，因为介质谐振腔反馈边界存在的光学折射逃逸，即当光在腔内传播时，如果入射角小于全反射角，光会产生折射泄露，腔内谐振模式因此表现出巨大的损耗，可认为是泄露模式，不同的模式损耗差异也较大，因此模式激射存在不均匀性和高阈值的特点。尤其是采用类FP谐振腔构建的低相干激光器，光波在腔边界上以近垂直方向入射，折射损耗较大，准FP模式的Q值也仅能达到约102，相应地激光器的阈值很高，甚至只能在脉冲泵浦下实现激射。因此，采用介质腔制作的激光器能够获得多模和低对比度的非相干光源发射，但存在要么阈值高，效率低，同时发射的光难以收集的特性。Traditional visible light lasers have the characteristics of high coherence, monochromaticity and concentrated light energy, but the existence of interference speckle limits their application in optical illumination and projection. In contrast, traditional semiconductor low-coherence light sources, such as light emitting diodes (GaN) based on the semiconductor material gallium nitride, have a wide range of applications in the field of lighting, but their brightness is relatively low and the light source concentration is poor, which makes it difficult to obtain high-speed imaging and imaging of rough interfaces. In recent years, in response to the low coherence but low brightness of semiconductor light-emitting diode light sources, and the defects of whispering gallery cavity lasers that are bright and highly coherent but easy to form speckles, Cao Hui et al. from Yale University proposed in 2015 to construct a semiconductor laser with high-density mode lasing using a two-dimensional D-shaped resonant cavity (see B. Redding et al., "Lowspatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging," Proc. Natl Acad. Sci. USA, vol. 112, no. 5, no. 1304-1309, Feb 2015). A gallium arsenide semiconductor laser was prepared in a 500 μm diameter D-shaped resonant cavity, and a laser containing about 1,000 modes was observed, which not only improved the brightness of the light source, but also reduced the coherence of the laser due to interference between multi-mode lasers. The disadvantage is that due to the low Q value of the cavity resonance mode, the device threshold is high, and lasing can only be achieved under pulse pumping. In addition to its application in the field of lighting, low-coherence light sources are also widely used in the fields of high-speed physical random number generation and secure communications. The literature (A. Uchida, et al., "Fast physical random bit generation with chaotic semiconductor lasers" Nat. Photon. 2, 728 (2008).) proposed the use of external cavity feedback to obtain a narrow-bandwidth chaotic laser based on a single-mode DFB laser. Since the laser linewidth is in the GHz range, the random number generation rate is limited. In order to further improve the physical random number generation rate, the literature [K. Kim, et al., "Massively parallel ultrafast random bit generation with a chip-scale laser," Science, vol. 371, no. 6532, pp. 948-952, Feb 2021.] proposed using a two-dimensional deformable cavity as a resonant cavity to obtain a low-coherence light source, and at the same time, based on multi-channel output, obtain THz-rate high-speed random numbers. However, in the above scheme, due to the optical refraction escape at the feedback boundary of the dielectric resonant cavity, that is, when light propagates in the cavity, if the incident angle is less than the total reflection angle, the light will leak out through refraction, and the resonant mode in the cavity will show huge loss, which can be considered as a leakage mode. The loss difference of different modes is also large, so the mode lasing has the characteristics of non-uniformity and high threshold. In particular, for low-coherence lasers constructed with quasi-FP resonant cavities, the light wave is incident in a nearly vertical direction on the cavity boundary, and the refraction loss is large. The Q value of the quasi-FP mode can only reach about 102. Correspondingly, the threshold of the laser is very high, and lasing can only be achieved under pulsed pumping. Therefore, lasers made with dielectric cavities can obtain multi-mode and low-contrast incoherent light source emission, but they have the characteristics of either high threshold, low efficiency, and difficulty in collecting the emitted light.
发明内容Summary of the invention
本发明的目的在于解决现有技术中的上述问题，包括低相干光源的谐振腔模式损耗大引发的激光器高阈值，发射光缺乏方向性等问题，提供一种金属包裹的非对称光学谐振腔，以期实现高亮度和低阈值的低相干光源。The purpose of the present invention is to solve the above-mentioned problems in the prior art, including the high threshold of the laser caused by the large resonant cavity mode loss of the low-coherence light source, the lack of directionality of the emitted light and other problems, and to provide a metal-wrapped asymmetric optical resonant cavity to achieve a low-coherence light source with high brightness and low threshold.
为达到上述目的，本发明采用如下技术方案：In order to achieve the above object, the present invention adopts the following technical scheme:
一种金属包裹的非对称光学谐振腔，包括从内到外依次设置的半导体增益材料、低折射率缓冲介质和金属层；所述半导体增益材料由上而下分别为上限制层、有源区和下限制层；所述非对称光学谐振腔的二维几何结构通过对曲线参数方程为的谐振腔切割获得，其中R为半径，θ为方位角，ε1,ε2为变形参数，为调节初相位，该非对称光学谐振腔几何结构无镜面对称。A metal-wrapped asymmetric optical resonant cavity comprises a semiconductor gain material, a low-refractive index buffer medium and a metal layer arranged in sequence from the inside to the outside; the semiconductor gain material comprises an upper confinement layer, an active region and a lower confinement layer from top to bottom; the two-dimensional geometric structure of the asymmetric optical resonant cavity is obtained by calculating the curve parameter equation as follows: The resonant cavity cutting is obtained, where R is the radius, θ is the azimuth angle, ε1 ,ε2 are deformation parameters, To adjust the initial phase, the asymmetric optical resonant cavity geometry has no mirror symmetry.
所述半导体增益材料选用砷化镓外延材料、氮化镓外延材料或铟磷外延材料。The semiconductor gain material is selected from gallium arsenide epitaxial material, gallium nitride epitaxial material or indium phosphide epitaxial material.
所述低折射率缓冲介质选用二氧化硅或氮化硅材料。The low refractive index buffer medium is made of silicon dioxide or silicon nitride.
所述金属层为具有复折射率的金属材料。The metal layer is a metal material with a complex refractive index.
所述金属材料采用贵金属、铝或铜。The metal material is noble metal, aluminum or copper.
相对于现有技术，本发明技术方案取得的有益效果是：Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
本发明提供一种金属包裹的非对称光学谐振腔，腔的二维几何结构具有无镜面对称的特征，且谐振模式具有低损耗的特点。通过对以参数方程为的曲线作为边界的谐振腔切割，获得无镜面对称二维光学谐振腔，腔内的光线反射到切面时角动量发生突变，演化为混沌的光学模式。本发明能够实现低对比度，高品质因子的多模共振。The present invention provides a metal-wrapped asymmetric optical resonant cavity, the two-dimensional geometric structure of the cavity has the characteristics of non-mirror symmetry, and the resonant mode has the characteristics of low loss. The resonant cavity is cut with the curve as the boundary to obtain a mirrorless symmetrical two-dimensional optical resonant cavity. When the light in the cavity is reflected to the cut surface, the angular momentum changes suddenly and evolves into a chaotic optical mode. The present invention can achieve multi-mode resonance with low contrast and high quality factor.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明金属包裹的非对称光学谐振腔的二维平面结构示意图。FIG. 1 is a schematic diagram of the two-dimensional planar structure of the metal-wrapped asymmetric optical resonant cavity of the present invention.
图2为本发明金属包裹和波导耦合的非对称光学混沌谐振腔的三维平面结构示意图。FIG. 2 is a schematic diagram of the three-dimensional planar structure of the metal-wrapped and waveguide-coupled asymmetric optical chaotic resonant cavity of the present invention.
图3为本发明图2截面1处的二维截面图。FIG3 is a two-dimensional cross-sectional view of the section 1 of FIG2 of the present invention.
图4为银包裹二维无镜面对称谐振腔50个TE模式的品质因子分布对比图。Figure 4 is a comparison of the quality factor distribution of 50 TE modes of the silver-wrapped two-dimensional mirrorless symmetric resonant cavity.
图5为50个模式的品质因子值对比度随切割宽度变化图。FIG5 is a graph showing the contrast of the quality factor values of 50 modes as a function of the cutting width.
图6为三个典型模式二维场分布图。Figure 6 shows the two-dimensional field distribution diagrams of three typical modes.
图7为不同切割宽度的能量均值分布图。FIG7 is a diagram showing the energy mean distribution for different cutting widths.
附图标记：半导体增益材料1，低折射率缓冲介质2，金属层3。Reference numerals: semiconductor gain material 1 , low refractive index buffer medium 2 , metal layer 3 .
具体实施方式DETAILED DESCRIPTION
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚、明白，以下结合附图和实施例，对本发明做进一步详细说明。In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and more understandable, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments.
参见图1，本发明实施例一种基于金属包裹的光学混沌谐振腔，包括内到外依次设置的半导体增益材料1、低折射率缓冲介质2和金属层3；Referring to FIG. 1 , an optical chaotic resonant cavity based on metal wrapping according to an embodiment of the present invention includes a semiconductor gain material 1, a low refractive index buffer medium 2 and a metal layer 3 arranged sequentially from inside to outside;
其中，所述谐振腔的形状通过对以参数方程为的曲线作为边界的谐振腔切割获得，其中变形度ε1为0.1，变形度ε2为0.075，θ为该谐振腔具有非镜面对称的特征。所述切割可定义切割宽度ε＝(ρ(θ)-Δρ)/ρ(θ)，其中ε＝0时为完整无镜面对称腔，当ε＝1时为半无镜面对称腔；其中R为谐振腔的半径，R介于3μm和1000μm之间，切割宽度ε大于0，小于1；为调节初相位。The shape of the resonant cavity is obtained by taking the parametric equation as The curve is obtained as the resonant cavity cut of the boundary, where the deformation ε1 is 0.1, the deformation ε2 is 0.075, and θ is The resonant cavity has a non-mirror symmetric feature. The cutting may define a cutting width ε = (ρ(θ) - Δρ)/ρ(θ), where When ε=0, it is a complete mirrorless symmetric cavity, and when ε=1, it is a semi-mirrorless symmetric cavity; where R is the radius of the resonant cavity, R is between 3μm and 1000μm, and the cutting width ε is greater than 0 and less than 1; To adjust the initial phase.
参见图2，本发明为一种基于金属包裹的无镜面对称光学谐振腔，包括：Referring to FIG. 2 , the present invention is a mirrorless symmetrical optical resonant cavity based on metal packaging, comprising:
一谐振腔，谐振腔二维几何结构为特定参数构成，且无镜面对称；A resonant cavity, wherein the two-dimensional geometric structure of the resonant cavity is formed by specific parameters and has no mirror symmetry;
一耦合波导，耦合波导在垂直方向与无镜面对称腔倏逝波耦合，即由器件解理得到的衬底作为波导进行光学耦合输出。A coupled waveguide is provided, wherein the coupled waveguide is coupled with the evanescent wave of the mirrorless symmetric cavity in a vertical direction, that is, the substrate obtained by cleaving the device is used as a waveguide for optical coupling output.
其中，所述谐振腔的材料可为InP基、GaAs基、GaN基半导体外延材料。The material of the resonant cavity may be InP-based, GaAs-based, or GaN-based semiconductor epitaxial material.
其中，所述低折射率缓冲介质2的材料，可为二氧化硅(SiO2)、氮化硅(Si3N4)等。The material of the low refractive index buffer medium 2 may be silicon dioxide (SiO2 ), silicon nitride (Si3 N4 ) or the like.
其中，所述金属层3的材料可为金、银、铜、铝等。The material of the metal layer 3 can be gold, silver, copper, aluminum, etc.
参见图3，为由金属包裹的无镜面对称光学混沌谐振腔的截面结构示意图。其中，谐振腔侧向依次由低折射率缓冲介质和复折射率的金属层限制。所述半导体增益材料由上而下分别为上限制层、有源区和下限制层。其中上限制层厚度为hu，由半导体材料的生长决定，通常为2～4μm厚，有源区的厚度ha介于100nm和500nm之间，下限制层的厚度hl小于上限制层，耦合波导宽度W大于或等于非镜面对称腔在衬底上的宽度，高度hw不限。See Figure 3, which is a schematic diagram of the cross-sectional structure of a metal-wrapped non-mirror symmetric optical chaotic resonant cavity. The resonant cavity is laterally limited by a low-refractive index buffer medium and a complex refractive index metal layer in sequence. The semiconductor gain material is an upper confinement layer, an active region, and a lower confinement layer from top to bottom. The thickness of the upper confinement layer is hu , which is determined by the growth of the semiconductor material and is usually 2 to 4 μm thick. The thickness of the active regionis between 100 nm and 500 nm. The thickness of the lower confinement layer is hl , which is less than the upper confinement layer. The coupling waveguide width W is greater than or equal to the width of the non-mirror symmetric cavity on the substrate, and the height hw is not limited.
图4基于全矢量的数值分析方法，当谐振腔半径R＝10μm，变形度ε1为0.1，变形度ε2为0.075，为nsk0R＝～129下的50个TE模式的品质因子值(Q值)分布对比图，其中ns为半导体材料的有效折射率，k0为波矢。其中缓冲介质是厚度为0.2μm的二氧化硅，金属层是厚度为0.1μm的银，分析模式在波长1.55μm附近。从图4可以看出，对于无切割的完整腔(ε＝0)，Q值覆盖3×104～107的波段，对比度较大，而ε＝1和ε＝0.65的腔中，模态对比度都较低，品质因子值范围在2×104～5×104。Figure 4 shows the numerical analysis method based on the full vector. When the cavity radius R = 10 μm, the deformation ε1 is 0.1, and the deformation ε2 is 0.075, for Comparison of the quality factor values (Q values) distribution of 50 TE modes under ns k0 R = ~129, where ns is the effective refractive index of the semiconductor material and k0 is the wave vector. The buffer medium is 0.2 μm thick silicon dioxide, the metal layer is 0.1 μm thick silver, and the analysis mode is around 1.55 μm wavelength. As can be seen from Figure 4, for the complete cavity without cutting (ε = 0), the Q value covers the band of 3×104 to 107 , and the contrast is relatively large, while in the cavities with ε = 1 and ε = 0.65, the mode contrast is low, and the quality factor value ranges from 2×104 to 5×104 .
图5给出基于全矢量的数值方法，分析在nsk0R＝～129时，所考虑的50个模式的品质因子值波动随切割度ε从0变化至1的变化图，其中谐振腔半径R＝10μm，变形度ε1为0.1，变形度ε2为0.075，θ为缓冲介质是厚度为0.2μm的二氧化硅，金属层是厚度为0.1μm的银，分析模式在波长1.55μm附近。定义参数δ描述谐振模式的品质因子值对比度：Q值的标准差与所考虑的模式nsk0R覆盖范围的平均Q值Qa的比值。δ随切割宽度变化如图5所示。从图中可看出，对TE和TM模式都存在一个最小值，TE模在ε＝0.65时，δ有最小值为0.13，TM模在ε＝0.75时，δ有最小值为0.09。此外，曲线方程R＝15μm的腔中，计算nsk0R＝194附近50个模式的光谱，发现对于TE和TM模式，δ与腔体变形参数的关系几乎相同，因此，本结果对于尺寸远大于谐振波长的腔具有普遍性。Figure 5 shows the full-vector numerical method, analyzing the fluctuation of the quality factor values of the 50 modes considered when ns k0 R = ~129 as the cut degree ε changes from 0 to 1, where the resonant cavity radius R = 10 μm, the deformation degree ε1 is 0.1, the deformation degree ε2 is 0.075, and θ is The buffer medium is silicon dioxide with a thickness of 0.2 μm, the metal layer is silver with a thickness of 0.1 μm, and the analysis mode is around the wavelength of 1.55 μm. The parameter δ is defined to describe the contrast of the quality factor values of the resonant mode: the ratio of the standard deviation of the Q value to the average Q value Qa of the coverage range of the modens k0 R considered. The variation of δ with the cutting width is shown in Figure 5. It can be seen from the figure that there is a minimum for both TE and TM modes. When ε = 0.65, δ has a minimum value of 0.13 for the TE mode, and when ε = 0.75, δ has a minimum value of 0.09 for the TM mode. In addition, in the cavity with the curve equation R = 15 μm, the spectra of 50 modes aroundns k0 R = 194 are calculated. It is found that for TE and TM modes, the relationship between δ and the cavity deformation parameter is almost the same. Therefore, this result is universal for cavities with sizes much larger than the resonant wavelength.
图6为采用全矢量的数值分析方法，得出的3个模式场分布图，其中，(a)、(b)和(c)分别为波长在1.55μm附近的三个谐振模式，由于是混沌模式，无法用模数进行表征。(a)到(c)模式场分布是由腔边界决定的典型模式。对于金属包裹的无镜面对称光学谐振腔中的所有模态，都形成一组依赖于腔几何结构的特殊射线轨迹。Figure 6 shows the three mode field distributions obtained using the full vector numerical analysis method, where (a), (b) and (c) are three resonant modes with a wavelength near 1.55μm. Since they are chaotic modes, they cannot be characterized by modulus. The mode field distributions from (a) to (c) are typical modes determined by the cavity boundary. For all modes in the metal-wrapped non-mirror symmetric optical resonant cavity, a set of special ray trajectories that depend on the cavity geometry are formed.
图7为采用全矢量的数值分析方法，得出腔的归一化的能量密度分布图，其中，(a)、(b)和(c)为切割宽度分别为ε＝0、ε＝0.65和ε＝1时谐振模式能量密度归一化的分布图。其中，谐振腔半径R＝10μm，缓冲介质是厚度为0.2μm的二氧化硅，金属层是厚度为0.1μm的银。从图7中可以看出，对于无切割的完整腔(ε＝0)，能量密度分布均匀性较差。而ε＝1和ε＝0.65的腔中，能量密度分布均匀，且大部分范围为高能量时间均值。FIG7 is a normalized energy density distribution diagram of the cavity obtained by the full-vector numerical analysis method, where (a), (b) and (c) are normalized distribution diagrams of the energy density of the resonant mode when the cutting width is ε = 0, ε = 0.65 and ε = 1, respectively. Wherein, the radius of the resonant cavity R = 10 μm, the buffer medium is silicon dioxide with a thickness of 0.2 μm, and the metal layer is silver with a thickness of 0.1 μm. It can be seen from FIG7 that for the complete cavity without cutting (ε = 0), the uniformity of the energy density distribution is poor. In the cavities with ε = 1 and ε = 0.65, the energy density distribution is uniform, and most of the range is the high energy time average.
本发明通过对以参数方程为的曲线作为边界的谐振腔切割，获得无镜面对称二维光学谐振腔。通过光学仿真和理论分析，金属包裹的无镜面对称结构光学谐振腔内同时存在大量的光学谐振模式，且各谐振模式具有相近的模式Q值。可见，利用本发明，能获得Q值对比度较低的光学多模共振，同时保持相对较高的模式Q值，且能量密度分布。以这种金属包裹的无镜面对称构光学谐振腔制作的激光器在低阈值，高效率，低相干激光源中有望得到应用。The present invention is carried out by using the parameter equation as The resonant cavity is cut with the curve as the boundary to obtain a mirrorless symmetrical two-dimensional optical resonant cavity. Through optical simulation and theoretical analysis, a large number of optical resonance modes exist simultaneously in the metal-wrapped mirrorless symmetrical structure optical resonant cavity, and each resonance mode has a similar mode Q value. It can be seen that by using the present invention, optical multi-mode resonance with a low Q value contrast can be obtained, while maintaining a relatively high mode Q value and energy density distribution. The laser made of this metal-wrapped mirrorless symmetrical structure optical resonant cavity is expected to be used in low threshold, high efficiency, and low coherence laser sources.
以上所述附图说明和实施例，对本发明的目的和有益效果进行进一步详细说明，所应理解的是，以上所述附图说明，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above-mentioned descriptions of the drawings and embodiments further illustrate the objects and beneficial effects of the present invention in detail. It should be understood that the above-mentioned descriptions of the drawings are not used to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
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| CN202211265243.9ACN115459052B (en) | 2022-10-17 | 2022-10-17 | Metal-wrapped asymmetric optical resonant cavity |
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