Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
As described in the background, with the continuous development of display technology, better and better visual experience is brought to users.
With the development of light-emitting diodes (LEDs), mini-LEDs (Mini-LEDs) and Micro-LEDs (Micro-light-emitting diodes) are the main components of the next generation display technology due to cost, display effect, and other factors. Mini-LED or Micro-LED display panels are low in cost, lighter and thinner, have large-scale capacity, longer in service life and lower in power consumption, and are paid attention to by various large panel manufacturers.
However, due to the problem of the manufacturing process, the light-emitting display of the Mini-LED or Micro-LED display panel often generates certain color shift, such as yellow shift or cyan shift, which affects the display effect of the display panel.
In the display panel, due to the problems of the materials, the luminous efficiency of the red light emitting diode is lower than that of the green light emitting diode and the blue light emitting diode, and the temperature rise in the light emitting process can cause the reduction of the luminous efficiency, thereby causing serious color shift.
In order to solve the technical problems, the embodiment of the application provides a display panel, a manufacturing method thereof and a display device, wherein the display panel comprises a driving substrate; the LED comprises a driving substrate, a light-emitting diode group, a packaging layer, a heat absorption light-emitting layer, a red light-emitting diode, a heat absorption light-emitting layer and a third material, wherein the light-emitting diode group is positioned on one side of the driving substrate and comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode, the packaging layer is positioned on one side of the light-emitting diode group, far away from the driving substrate, the heat absorption light-emitting layer is positioned between the packaging layer and the driving substrate, the red light-emitting diode is in contact with the heat absorption light-emitting layer, the heat absorption light-emitting layer comprises a first conductive material and a second conductive material, the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the work function of the first conductive material is larger than that of the second conductive material, and the heat absorption light-emitting layer comprises a third material capable of emitting red light. The application can absorb the thermoluminescence of the red light-emitting diode by utilizing the heat absorption luminescent layer, thereby not only increasing the luminescent brightness of the red light-emitting diode, but also reducing the luminescent temperature of the red light-emitting diode and reducing the luminous efficiency attenuation of the red light-emitting diode, thereby effectively improving the color cast of the luminescent display of the display panel and enhancing the display effect of the display panel.
For a better understanding of the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic cross-sectional structure of a display panel according to an embodiment of the present application, where the display panel according to the embodiment of the present application includes:
A drive substrate 1;
A light emitting diode group at one side of the driving substrate 1, the light emitting diode group including a red light emitting diode 2, a green light emitting diode 3 and a blue light emitting diode 4;
The packaging layer 5 is positioned on one side of the light-emitting diode group far away from the driving substrate 1;
the red light emitting diode comprises a red light emitting diode (6), a red light emitting diode (2), a heat absorption light emitting layer (6) positioned between the packaging layer (5) and the driving substrate (1), the red light emitting diode (2) is in contact with the heat absorption light emitting layer (6), the heat absorption light emitting layer (6) comprises a first conductive material and a second conductive material, the first conductive material is connected with a power supply negative electrode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply positive electrode, the first conductive material is electrically connected with the second conductive material, the work function of the first conductive material is larger than that of the second conductive material, and the heat absorption light emitting layer (6) comprises a third material capable of emitting red light.
That is, in the embodiment of the present application, the heat absorption and emission layer 6 can be used to absorb the thermoluminescence of the red light emitting diode 2, so that the light emitting brightness of the red light emitting diode 2 can be increased, the light emitting temperature of the red light emitting diode can be reduced, and the light emitting efficiency attenuation of the red light emitting diode 2 can be reduced, thereby effectively improving the color shift of the light emitting display of the display panel, and improving the display effect of the display panel.
Specifically, in the embodiment of the present application, the material of the driving substrate 1 may include glass, transparent ceramic, transparent plastic, or various flexible or bendable materials, for example, polymer resins such as polyethersulfone (Polyethersulfone, PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (Polyethylene naphthalate, PEN), polyethylene terephthalate (Polyethylene terephthalate, PET), polyphenylene sulfide (Polyphenylene sulfide, PPS), polyarylate, polyimide (PI), polycarbonate (PC), or cellulose acetate propionate (Cellulose Acetate Propionate, CAP), and when the driving substrate 1 is a flexible material, the display panel provided in the embodiment of the present application may include a flexible display panel, which facilitates realization of new display forms such as various folding screens, curling screens, etc., and the operating scenes such as folding screens, curling screens, etc., include light-emitting displays in a bent state.
In addition, the encapsulation layer 5 located at the side of the led group away from the driving substrate 1 is used to prevent the display panel from being damaged by external water and oxygen, and the encapsulation layer 5 may be a structure in which an inorganic layer, an organic layer and an inorganic layer are sequentially stacked, which is not particularly limited herein, and may be specifically set by one skilled in the art according to actual situations.
In actual production, the light-emitting efficiency of the three lamps of the light-emitting diode group on the side of the driving substrate 1 is not uniform, i.e., the light-emitting efficiency of the three red light-emitting diodes 2, green light-emitting diodes 3, and blue light-emitting diodes 4 is not exactly the same. In general, the red light emitting diode 2 has low light emitting efficiency, which results in the green light emitting diode 3 and the blue light emitting diode 4 emitting strong light, thereby generating color shift cyan (green+blue) of the image. In order to avoid too large a difference in brightness between the red light emitting diode 2, the green light emitting diode 3 and the blue light emitting diode 4, it is necessary to increase the driving current or the duty ratio of the driving current of the red light emitting diode 2, and the larger driving current and duty ratio result in that the brightness of the red light emitting diode 2 is attenuated faster than that of the blue and green light emitting diodes, and as the temperature of the red light emitting diode 2 increases after lighting, the light emitting efficiency of the red light emitting diode 2 is further attenuated, possibly more than 50%.
Therefore, in the embodiment of the present application, the heat absorbing and emitting layer 6 contacting with the red light emitting diode 2 may be disposed between the packaging layer 5 and the driving substrate 1, so as to reduce the temperature of the red light emitting diode 2 and improve the light emitting efficiency thereof, and in addition, the layer may absorb heat and emit light, improve the light emitting brightness of the red light emitting diode 2, and make up for the problem of low light emitting efficiency of the red light emitting diode 2.
In particular, electron diffusion is always caused by contact between different conductive materials, and is always diffused from a low work function material to a high work function material. Contact potential is generated when equilibrium is reached at ambient temperature, the low work function metal being positive and the high work function metal being negative. If a current is passed, the contact surface heats up when electrons flow from a positive potential to a negative potential, and absorbs heat when electrons flow from a negative potential to a positive potential.
Therefore, in the embodiment of the present application, referring to fig. 2, fig. 2 is a schematic cross-sectional structure of a heat absorption and light emitting layer provided in the embodiment of the present application, the heat absorption and light emitting layer 6 may include a first conductive material 11 and a second conductive material 12, where the first conductive material 11 is connected to a negative electrode of a power supply, and the second conductive material 12 is electrically connected to the first conductive material 11, that is, electrons flow from the first conductive material 11 to the second conductive material 12.
Meanwhile, since the work function of the first conductive material 11 is larger than that of the second conductive material 12, that is, electrons flow from the high work function first conductive material 11 of negative potential to the low work function second conductive material 12 of positive potential at this time, the contact surface absorbs heat when electrons flow from the negative potential to the positive potential.
And, the heat absorption luminescent layer 6 comprises the third material 13 which emits red light, so that the light can be emitted while absorbing heat, the temperature of the red light emitting diode 2 is reduced, the light emitting brightness of the red light emitting diode 2 is improved, and the light emitting efficiency is improved, so that the color cast of the luminescent display of the display panel is effectively improved, and the display effect of the display panel is improved. Alternatively, an electrode material may be disposed on a side of the third material 13 near the positive electrode, so as to realize that the third material 13 emits light under the effect of an electric current.
In a possible implementation manner, referring to fig. 3, fig. 3 is a schematic cross-sectional structure of another heat absorption and light emitting layer provided by an embodiment of the present application, where the first conductive material 11 provided by the embodiment of the present application includes a first metal copper 111, the second conductive material 12 includes a metal barium 121, the first metal copper 111 and the metal barium 121 are stacked, the first metal copper 111 is connected to a power supply negative electrode, and the metal barium 121 is located on a side of the first metal copper 111 away from the power supply negative electrode;
The second conductive material 12 includes a second metal copper 122, the first conductive material 11 includes a metal platinum 112, the second metal copper 122 and the metal platinum 112 are stacked, the second metal copper 122 is connected to the positive electrode of the power supply, and the metal platinum 112 is located on a side of the second metal copper 122 away from the positive electrode of the power supply. That is, in the embodiment of the present application, the first conductive material 11 may be connected to the negative electrode of the power source, the second conductive material 12 may be electrically connected to the first conductive material 11, and/or the second conductive material 12 may be connected to the positive electrode of the power source, and the first conductive material 11 may be electrically connected to the second conductive material 12.
Since the work function of barium metal is 2.5eV, the work function of copper metal is 4.65eV, and the work function of platinum metal is 5.65eV. Therefore, on the contact surface of the first metal copper 111 at the negative end of the power supply and the metal barium 121, electrons flow from the first metal copper 111 with high work function to the metal barium 121 with low work function, namely electrons flow from negative potential to positive potential, and therefore the contact surface absorbs heat, on the contact surface of the second metal copper 122 at the positive end of the power supply and the metal platinum 112, electrons flow from the metal platinum 112 with high work function to the second metal copper 122 with low work function, namely electrons flow from negative potential to positive potential, and therefore the contact surface absorbs heat, so that the heat absorption of the heat absorption luminous layer is realized, the luminous efficiency reduction caused by the temperature rise of the red light emitting diode is slowed down, and the color cast of the display panel is effectively improved.
It should be noted that fig. 3 only shows one possible relative position among the first conductive material 11, the second conductive material 12, and the third conductive material 13, and other stacking manners are also possible, and embodiments of the present application are not specifically limited herein, and may be specifically set by those skilled in the art according to practical situations.
In one possible implementation manner, referring to fig. 4, fig. 4 is a schematic cross-sectional structure of another heat absorption and light emitting layer provided by an embodiment of the present application, where the third material 13 provided by the embodiment of the present application may include a P-type semiconductor material 131 in contact with the first conductive material 11, an N-type semiconductor material 132 in contact with the second conductive material 12, and a PN junction 133 formed between the N-type semiconductor material 132 and the P-type semiconductor material 131 so as to emit light under the action of current.
Optionally, the N-type semiconductor material 132 provided in the embodiment of the present application may include N-type gallium phosphide or N-type gallium arsenide phosphide, and the P-type semiconductor material 131 may include P-type gallium phosphide or P-type gallium arsenide phosphide. The red light emitting material gallium phosphide or gallium arsenide phosphide can be utilized to compensate the defect of insufficient red light emission of the red light emitting diode.
In one possible implementation manner, referring to fig. 5, fig. 5 is a schematic cross-sectional structure of another heat absorption and light emitting layer provided by an embodiment of the present application, where the N-type semiconductor material 132 provided by the embodiment of the present application may include a heavily doped N-type semiconductor material 1321 and a lightly doped N-type semiconductor material 1322 stacked in sequence, and the P-type semiconductor material 131 may include a heavily doped P-type semiconductor material 1311 and a lightly doped P-type semiconductor material 1312 stacked in sequence.
For example, referring to fig. 6, fig. 6 is a schematic diagram showing the electric potential of the contact surface between different structures in the endothermic light-emitting layer according to the embodiment of the present application, when the heavily doped N-type semiconductor material 1321 is heavily doped N-type gallium phosphide (GaP), the lightly doped N-type semiconductor material 1322 is lightly doped N-type gallium phosphide, the heavily doped P-type semiconductor material 1311 is heavily doped P-type gallium phosphide and the lightly doped P-type semiconductor material 1312 is lightly doped P-type gallium phosphide:
Electrons flow from the negative electrode to the positive electrode, electrons flow from a negative potential to a positive potential on the contact surface (a-b in fig. 6) of the first metal copper 111 and the metal barium 121 at the negative electrode end of the power supply, the contact surface absorbs heat, no potential difference exists on the contact surface (b-c) of the metal barium 121 and the heavily doped N-type gallium phosphide 1321, ohmic contact is caused, the resistance is small, only small heat is generated, concentration electrons diffuse on the contact surface (c-d) of the heavily doped N-type gallium phosphide 1321 and the lightly doped N-type gallium phosphide 1322, generated potential difference is low, electron current flows from the positive potential to the negative potential, the heat generated by the contact surface is small, the heat generated by the combination of electrons and holes at the P-N junction (d-e) is equivalent to energy consumption and heat generated, the concentration diffusion of holes exists on the contact surface (e-f) of the lightly doped P-type gallium phosphide 1312 and the heavily doped P-type gallium phosphide 1311, the potential difference generated by the contact surface is low, the hole current flows from the negative potential difference is caused to the positive potential, the contact surface is equivalent to the negative potential difference (c-d) is equivalent to electron movement, and the platinum current flows from the contact surface (g-g) of the negative potential difference is small, and the platinum electrical potential difference is represented by the contact surface (g-g) is small, and the platinum electrical potential difference is not represented by the contact surface (P-g) is represented by the equivalent to be high potential difference) and the contact surface (P-g) is represented by the metal lead 112).
The heat absorption luminous layer is totally outwards absorbed, and the temperature of the red luminous diode is reduced.
Alternatively, referring to fig. 5 and 7, fig. 7 is a schematic cross-sectional structure of another display panel according to an embodiment of the application, the low doped N-type semiconductor material 1322 is located on a side of the heavily doped N-type semiconductor material 1321 away from the driving substrate 1, and the low doped P-type semiconductor material 1312 is located on a side of the heavily doped P-type semiconductor material 1311 away from the encapsulation layer 5.
Namely, the heat absorption and light emitting layer 6 provided in the embodiment of the application may be located between the red light emitting diode 2 and the packaging layer 5, the positive and negative electrodes of the red light emitting diode 2 are welded with the positive and negative power supplies on the driving substrate 1, the positive and negative electrodes of the heat absorption and light emitting layer 6 may be welded with the positive and negative power supplies on the driving substrate 1 through the first groove 61 and the second groove 62, respectively, and in order to avoid short circuit, insulating materials may be disposed on the sidewalls of the first groove 61 and the second groove 62, so as to realize heat absorption and light emission of the heat absorption and light emitting layer 6.
It should be noted that, the connection between the red light emitting diode 2 and the heat absorption light emitting layer 6 and the positive and negative power supply on the driving substrate 1 may be achieved by other manners, for example, the red light emitting diode 2 and the heat absorption light emitting layer 6 may be separately bound to different positive and negative power supply pads on the driving substrate 1, or the connection between the heat absorption light emitting layer 6 and the positive and negative power supply on the driving substrate 1 may be achieved by a bridge-crossing manner.
Optionally, referring to fig. 7, the display panel provided by the embodiment of the application may further include a color conversion layer 9 located at a side of the red light emitting diode 2 away from the driving substrate 1, where the heat absorption light emitting layer 6 is located between the color conversion layer 9 and the red light emitting diode 2, and the color conversion layer 9 is provided, so that light emitted by the light emitting diode group is purer, a display effect of the display panel is improved, and a use experience of a user is enhanced.
In one possible implementation, referring to fig. 1, the endothermic light-emitting layer 6 provided in the embodiment of the present application may be located between the red light-emitting diode 2 and the driving substrate 1, where the transmittance of the red light-emitting diode is greater than or equal to a preset threshold.
The heat absorption and light emitting layer 6 and the red light emitting diode 2 can be formed by sharing the same substrate, the positive and negative electrodes of the heat absorption and light emitting layer 6 are welded with the positive and negative power supply on the driving substrate 1, the positive and negative electrodes of the red light emitting diode 2 can be welded with the positive and negative power supply on the driving substrate 1 through the first groove 61 and the second groove 62 respectively, and in order to avoid short circuit, insulating materials can be arranged on the side walls of the first groove 61 and the second groove 62, so that heat absorption and light emission of the heat absorption and light emitting layer 6 are realized.
It should be noted that, the connection between the red light emitting diode 2 and the heat absorption light emitting layer 6 and the positive and negative power supply on the driving substrate 1 may be achieved by other manners, for example, the red light emitting diode 2 and the heat absorption light emitting layer 6 may be separately bound to different positive and negative power supply pads on the driving substrate 1, or the connection between the red light emitting diode 2 and the positive and negative power supply on the driving substrate 1 may be achieved by a bridge-crossing manner.
In addition, in order to allow the light emitted from the endothermic light emitting layer 6 to pass through the red light emitting diode 2, the transmittance of the red light emitting diode may be greater than or equal to a preset threshold. Alternatively, the substrate of the red light emitting diode 2 may include a sapphire substrate, which is transparent to light. The buffer layer on the substrate may be a gallium nitride material, which is a translucent material, so that the heat absorbing luminescent layer 6 may emit light through the red light emitting diode 2.
It should be noted that, the light output of the heat absorption and light emission layer 6 depends on the transmittance of the material and the light intensity of the heat absorption and light emission layer 6, and the embodiment of the present application is not specifically limited herein, and may be specifically set by those skilled in the art according to practical situations.
In addition, referring to fig. 1 and 7, the display panel provided in the embodiment of the present application may further include a first insulating layer 7 covering the light emitting diode group, and a Black Matrix (BM) 8 between the encapsulation layer 5 and the first insulating layer 7.
The embodiment of the application provides a display panel which comprises a driving substrate, a light emitting diode group positioned on one side of the driving substrate, a packaging layer positioned on one side of the light emitting diode group away from the driving substrate, a heat absorption and light emitting layer positioned between the packaging layer and the driving substrate, wherein the red light emitting diode is in contact with the heat absorption and light emitting layer, the heat absorption and light emitting layer comprises a first conductive material and a second conductive material, the first conductive material is connected with a negative electrode of a power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, the work function of the first conductive material is larger than that of the second conductive material, and the heat absorption and light emitting layer comprises a third material for emitting red light. The application can absorb the thermoluminescence of the red light-emitting diode by utilizing the heat absorption luminescent layer, thereby not only increasing the luminescent brightness of the red light-emitting diode, but also reducing the luminescent temperature of the red light-emitting diode and reducing the luminous efficiency attenuation of the red light-emitting diode, thereby effectively improving the color cast of the luminescent display of the display panel and enhancing the display effect of the display panel.
Referring to fig. 8, fig. 8 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present application, including:
S101, providing a driving substrate;
S102, forming a light-emitting diode group and a heat absorption light-emitting layer and binding the light-emitting diode group and the heat absorption light-emitting layer on the driving substrate, wherein the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
S103, forming a packaging layer on one side of the light-emitting diode group far away from the driving substrate, wherein the heat absorption light-emitting layer is positioned between the packaging layer and the driving substrate, and the red light-emitting diode is formed by contacting with the heat absorption light-emitting layer;
The heat absorption luminous layer comprises a first conductive material and a second conductive material, the first conductive material is connected with a power supply negative electrode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply positive electrode, the first conductive material is electrically connected with the second conductive material, the work function of the first conductive material is larger than that of the second conductive material, and the heat absorption luminous layer comprises a third material capable of emitting red light.
Optionally, a semiconductor layer is formed on one side of the substrate of the red light emitting diode, and the forming of the heat absorption light emitting layer comprises forming the heat absorption light emitting layer on the same side of the semiconductor layer in a vapor phase epitaxy or liquid phase epitaxy mode.
That is, as shown in fig. 7, when the endothermic light emitting layer 6 is to be formed between the red light emitting diode 2 and the encapsulation layer 5, the endothermic light emitting layer 6 may be formed by vapor phase epitaxy or liquid phase epitaxy.
For example, gallium arsenide phosphide (GaAsP) or gallium phosphide (GaP) can be formed by vapor phase epitaxy or liquid phase epitaxy, and CVD (Chemical Vapor Deposition ) method (Ga, HCl, asH and H2 methods and Ga, asCl3 and N2 methods) is adopted for the general vapor phase epitaxy process.
The liquid phase epitaxy process is to cover the surface of the substrate with Ga or GaAs molten pool, then to grow epitaxial layer by cooling, or to use temperature gradient growth method or electric epitaxy method of applying direct current. Currently, gallium arsenide phosphide (GaAsP) liquid phase epitaxy methods are mainly used for manufacturing gallium arsenide double heterojunction lasers, solar cells and the like, and a small amount is used for manufacturing devices (microwave devices). Therefore, the liquid phase epitaxy process gallium arsenide phosphide (GaAsP) meets the coating requirement of the application.
Optionally, a semiconductor layer is formed on one side of the substrate of the red light-emitting diode, and the forming of the heat absorption and light emission layer comprises the step of forming the heat absorption and light emission layer on one side of the substrate far away from the semiconductor layer in an electrodeposition mode.
That is, as shown in fig. 1, when the endothermic light-emitting layer 6 is to be formed between the red light-emitting diode 2 and the driving substrate 1, the endothermic light-emitting layer 6 may be formed by electrodeposition.
Namely, the nano gallium arsenide phosphide or gallium phosphide film is prepared by utilizing a current deposition method, so that the requirements of the scheme applied to micro-level light-emitting diodes (micro-LEDs) are met.
The embodiment of the application provides a manufacturing method of a display panel, which comprises the steps of providing a driving substrate, forming a light emitting diode group and a heat absorption light emitting layer, binding the light emitting diode group and the heat absorption light emitting layer on the driving substrate, forming a packaging layer on one side of the light emitting diode group far away from the driving substrate, forming the heat absorption light emitting layer between the packaging layer and the driving substrate, enabling the red light emitting diode to be in contact with the heat absorption light emitting layer, enabling the heat absorption light emitting layer to comprise a first conductive material and a second conductive material, enabling the first conductive material to be connected with a power supply cathode, enabling the second conductive material to be electrically connected with a first conductive material, enabling the second conductive material to be connected with a power supply anode, enabling the work function of the first conductive material to be larger than that of the second conductive material, and enabling the heat absorption light emitting layer to comprise a third material capable of emitting red light. The application can absorb the thermoluminescence of the red light-emitting diode by utilizing the heat absorption luminescent layer, thereby not only increasing the luminescent brightness of the red light-emitting diode, but also reducing the luminescent temperature of the red light-emitting diode and reducing the luminous efficiency attenuation of the red light-emitting diode, thereby effectively improving the color cast of the luminescent display of the display panel and enhancing the display effect of the display panel.
Referring to fig. 9, a schematic plan view of a display device according to an embodiment of the application is shown. As can be seen, the display device 99 includes a display panel 1111, and the display panel 1111 is the display panel described in any of the above embodiments. The display device 99 provided in the embodiment of the present application may be a mobile phone, a tablet, a computer, a television, a vehicle-mounted display device, an instrument display device, or other display devices with display functions, which is not limited in particular. The display device 99 provided in the embodiment of the present application has the beneficial effects of the display panel provided in the embodiment of the present application, and the specific description of the display panel in the above embodiment may be referred to specifically, and the embodiments of the present application are not repeated here.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for the method embodiments, since they are substantially similar to the display panel embodiments, the description is relatively simple, and reference is made to the partial description of the display panel embodiments for the matters.
The foregoing is merely a preferred embodiment of the present application, and the present application has been disclosed in the above description of the preferred embodiment, but is not limited thereto. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present application or modifications to equivalent embodiments using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present application still fall within the scope of the technical solution of the present application.