CN115351931A - Crystal cutting method and piezoelectric wafer - Google Patents
Crystal cutting method and piezoelectric waferDownload PDFInfo
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- CN115351931A CN115351931ACN202210894971.XACN202210894971ACN115351931ACN 115351931 ACN115351931 ACN 115351931ACN 202210894971 ACN202210894971 ACN 202210894971ACN 115351931 ACN115351931 ACN 115351931A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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Abstract
Description
Translated fromChinese技术领域technical field
本发明涉及切割技术领域，尤其是涉及一种晶体的切割方法和压电晶片。The invention relates to the technical field of cutting, in particular to a crystal cutting method and a piezoelectric wafer.
背景技术Background technique
目前，对于非金属以及其他硬材料的切割，都是把待切割件先去边角料以使待切割件形成规则形状，再将上述形成规则形状的待切割件用胶水等粘接到切割装置上进行切割。At present, for the cutting of non-metallic and other hard materials, the scraps of the pieces to be cut are first removed to form a regular shape, and then the above-mentioned pieces to be cut in a regular shape are bonded to the cutting device with glue or the like. cutting.
然而，对于压电晶体而言，由于其形状不规则，且压电晶体的压电方向不确定，使得压电晶体先进行去头尾、或去边角料的切割方法难以实行，则压电晶体通常整体切割；为此，晶体无法直接固定粘接到切割装置上，即使用晶体的底部用厚胶水进行固定也难以保证胶水固化前晶体压电方向不偏位。However, for the piezoelectric crystal, due to its irregular shape and the uncertain piezoelectric direction of the piezoelectric crystal, it is difficult to implement the method of cutting the piezoelectric crystal first to remove the head and tail, or to remove the scraps, and the piezoelectric crystal is usually Overall cutting; for this reason, the crystal cannot be directly fixed and bonded to the cutting device, even if the bottom of the crystal is fixed with thick glue, it is difficult to ensure that the piezoelectric direction of the crystal is not biased before the glue solidifies.
发明内容Contents of the invention
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明提出一种晶体的切割方法，所述切割方法便于使得待切割晶体间接满足切割装置的材料硬度以及固定要求，提高切割良品率。The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, the present invention proposes a crystal cutting method, which facilitates making the crystal to be cut indirectly meet the material hardness and fixing requirements of the cutting device, and improves the cutting yield.
根据本发明实施例的晶体的切割方法，包括以下步骤：S1、将待切割晶体置于模具的灌胶空间内，所述灌胶空间的顶部形成有与所述灌胶空间连通的灌胶口；S2、向所述灌胶空间内灌胶，以使胶体填充在所述待切割晶体和所述灌胶空间的壁面之间，且所述胶体没过所述待切割晶体；S3、待所述胶体固化后脱模，所述待切割晶体和所述胶体形成为待切割件，所述待切割件的其中一侧表面形成为固定面；S4、切割装置包括固定组件和切割组件，所述固定组件与所述待切割件的所述固定面固定，所述切割组件对所述待切割件进行切割。The crystal cutting method according to the embodiment of the present invention includes the following steps: S1, placing the crystal to be cut in the glue filling space of the mold, the top of the glue filling space is formed with a glue filling port communicating with the glue filling space ; S2, pouring glue into the glue filling space, so that the colloid is filled between the crystal to be cut and the wall of the glue filling space, and the colloid is not over the crystal to be cut; S3, waiting After the colloid is solidified and demoulded, the crystal to be cut and the colloid are formed into a piece to be cut, and one side surface of the piece to be cut is formed as a fixed surface; S4, the cutting device includes a fixing component and a cutting component, the The fixing component is fixed to the fixing surface of the piece to be cut, and the cutting component cuts the piece to be cut.
根据本发明实施例的晶体的切割方法，通过将待切割晶体进行灌胶封装以使待切割晶体和固化后的胶体形成待切割件，使得待切割件具有较高的硬度，且便于固定，使得待切割件满足切割装置例如金刚石切割装置的材料硬度以及固定要求，同时胶体可以对待切割晶体进行切割保护，以表面待切割晶体在切割过程中被研磨成粉末，从而有效提高了切割良品率。对于压电晶体而言，本申请中的切割方法不会造成压电晶体压电方向的变化或移位。According to the crystal cutting method of the embodiment of the present invention, the crystal to be cut is encapsulated with glue so that the crystal to be cut and the cured colloid form the piece to be cut, so that the piece to be cut has a higher hardness and is easy to fix, so that The piece to be cut meets the material hardness and fixing requirements of the cutting device such as a diamond cutting device. At the same time, the colloid can protect the crystal to be cut, so that the crystal to be cut on the surface will be ground into powder during the cutting process, thereby effectively improving the cutting yield. For piezoelectric crystals, the cutting method in this application will not cause changes or shifts in the piezoelectric direction of the piezoelectric crystals.
在一些实施例中，在所述步骤S1中，将所述待切割晶体与所述灌胶空间的底壁和周壁分别间隔设置。In some embodiments, in the step S1, the crystal to be cut is spaced apart from the bottom wall and the peripheral wall of the potting space, respectively.
在一些实施例中，在所述步骤S1之前，还包括以下步骤：S0、向所述灌胶空间内灌胶，以使所述胶体填充所述灌胶空间的底部；或者，在所述步骤S1中，将所述待切割晶体粘接于所述灌胶空间的底壁。In some embodiments, before the step S1, the following steps are further included: S0, pouring glue into the glue filling space, so that the glue fills the bottom of the glue filling space; or, in the step In S1, the crystal to be cut is bonded to the bottom wall of the potting space.
在一些实施例中，在所述步骤S2中，震动所述模具。In some embodiments, in the step S2, the mold is vibrated.
在一些实施例中，所述待切割晶体为水溶性晶体，所述胶体构造成所述胶体固化后与所述待切割晶体不粘接、且与所述模具粘接。In some embodiments, the crystal to be cut is a water-soluble crystal, and the colloid is configured such that the colloid is not bonded to the crystal to be cut and is bonded to the mold after curing.
在一些实施例中，所述灌胶空间形成为柱状结构，所述灌胶空间的横截面形状为多边形、或圆形、或椭圆形。In some embodiments, the glue filling space is formed into a columnar structure, and the cross-sectional shape of the glue filling space is a polygon, or a circle, or an ellipse.
在一些实施例中，所述模具包括底板和多个侧板，多个所述侧板依次活动相连以形成为环形结构，多个所述侧板的顶部限定出所述灌胶口，所述底板连接在多个所述侧板的底部且与多个所述侧板共同限定出所述灌胶空间，其中，多个所述侧板中的至少两个可拆卸相连，且多个所述侧板中的所述至少两个分别与所述底板可拆卸相连。In some embodiments, the mold includes a bottom plate and a plurality of side plates, the plurality of side plates are movably connected in turn to form a ring structure, the tops of the plurality of side plates define the glue pouring opening, the The bottom plate is connected to the bottom of the plurality of side plates and jointly defines the glue filling space with the plurality of side plates, wherein at least two of the plurality of side plates are detachably connected, and the plurality of side plates The at least two of the side panels are respectively detachably connected to the bottom panel.
在一些实施例中，每个所述侧板与所述底板可拆卸相连，在所述步骤S1中，所述将待切割晶体置于模具的灌胶空间内，包括：所述底板的顶面与所述固定面对应，将所述待切割晶体的压电面与所述底板的顶面垂直设置粘接；将多个所述侧板间隔设在所述待切割晶体的外周侧。In some embodiments, each of the side plates is detachably connected to the bottom plate. In the step S1, placing the crystal to be cut in the glue filling space of the mold includes: the top surface of the bottom plate Corresponding to the fixed surface, the piezoelectric surface of the crystal to be cut is vertically bonded to the top surface of the bottom plate; multiple side plates are arranged at intervals on the outer peripheral side of the crystal to be cut.
根据本发明第二方面实施例的压电晶片，采用根据本发明上述第一方面实施例的晶体的切割方法制备得到。The piezoelectric wafer according to the embodiment of the second aspect of the present invention is prepared by using the crystal cutting method according to the above embodiment of the first aspect of the present invention.
根据本发明实施例的压电晶片，通过采用上述的切割方法，方便切割，且便于保证压电晶片的平整性。According to the piezoelectric wafer of the embodiment of the present invention, by adopting the above-mentioned cutting method, it is convenient to cut and ensure the flatness of the piezoelectric wafer.
在一些实施例中，所述压电晶片的厚度为t，0.05mm≤t≤2mm。In some embodiments, the thickness of the piezoelectric wafer is t, and 0.05mm≤t≤2mm.
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
附图说明Description of drawings
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present invention will become apparent and comprehensible from the description of the embodiments in conjunction with the following drawings, wherein:
图1是根据本发明一个实施例的晶体切割方法流程示意图；Fig. 1 is a schematic flow chart of a crystal cutting method according to an embodiment of the present invention;
图2是根据本发明另一个实施例的晶体切割方法流程示意图；Fig. 2 is a schematic flow chart of a crystal cutting method according to another embodiment of the present invention;
图3是根据本发明再一个实施例的晶体切割方法流程示意图；Fig. 3 is a schematic flow chart of a crystal cutting method according to yet another embodiment of the present invention;
图4是根据本发明一个实施例的待切割晶体的灌胶示意图；Fig. 4 is a schematic diagram of glue filling of crystals to be cut according to an embodiment of the present invention;
图5是图5中所示的待切割晶体的另一个灌胶示意图；Fig. 5 is another schematic diagram of glue pouring of the crystal to be cut shown in Fig. 5;
图6是图4中所示的模具的示意图。FIG. 6 is a schematic diagram of the mold shown in FIG. 4 .
附图标记：Reference signs:
待切割件1、待切割晶体11、胶体12、Part to be cut 1, crystal to be cut 11, colloid 12,
顶面1a、底面1b、
模具2、灌胶空间20、灌胶口20a、
底板21、侧板22。
具体实施方式Detailed ways
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或字母。这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的可应用于性和/或其他材料的使用。The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art will recognize the applicability of other processes and/or the use of other materials.
下面，参考附图，描述根据本发明实施例的晶体的切割方法。Hereinafter, referring to the accompanying drawings, a crystal cutting method according to an embodiment of the present invention will be described.
如图1-图3所示，晶体的切割方法包括以下步骤：As shown in Figures 1-3, the crystal cutting method includes the following steps:
S1、将待切割晶体11置于模具2的灌胶空间20内，灌胶空间20的顶部形成有灌胶口20a，灌胶口20a与灌胶空间20连通。S1. Place the
S2、向灌胶空间20内灌胶，以使胶体12填充在待切割晶体11和灌胶空间20的壁面之间，且胶体12没过待切割晶体11。S2. Pouring glue into the
灌胶时，胶体12通过灌胶口20a流至待切割晶体11的外表面和灌胶空间20的壁面之间，直至胶体12液面逐渐上升至超过待切割晶体11的上端，使得胶体12将整个待切割晶体11包裹封装。During glue filling, the
S3、待胶体12固化后脱模，待切割晶体11和胶体12形成为待切割件1，待切割件1的其中一侧表面形成为固定面。S3. Release the mold after the
胶体12固化后，待切割晶体11和胶体12形成为一体结构件，并将该一体结构件与模具2分离以得到待切割件1，待切割件1的结构与灌胶空间20的结构相适配，便于使得待切割件1具有较为规则的形状，以便于待切割件1在切割过程中的稳定设置。其中，待切割件1的顶面1a、或底面1b、或任意侧面可以形成为固定面。After the
S4、切割装置包括固定组件，固定组件与待切割件1的固定面固定（直接固定或间接固定，例如固定组件通过后文所述的底板21与固定面固定），方便了待切割件1的固定，使得固定组件稳定承载待切割件1，便于使得待切割件1在切割过程中具有稳定的设置位置和设置姿态，切割组件对待切割件1进行切割，从而实现待切割晶体11的切割。例如，待切割件1的固定面与固定组件粘接固定，固定面可以为平面或曲面。S4. The cutting device includes a fixed assembly, which is fixed to the fixed surface of the
可见，本申请中针对具有不规则形状的待切割晶体11，通过模具2对待切割晶体11进行灌胶封装，使得脱模后的一体结构件具有规则的形状，以便于实现待切割晶体11在切割过程中的间接限位，同时当待切割晶体11的硬度较低时，如果采用金刚石单线/多线切割的方式等切割待切割件1，由于金刚石切割用于切割硬度较高的材料，胶体12的设置可以提升整个待切割件1的硬度以及化学稳定性，金刚石线对待切割晶体11和胶体12同时施加切割力，胶体12可以对待切割晶体11起到一定保护作用，以避免待切割晶体11被金刚石线反复研磨成粉末，降低线网跳线、断线几率，实现了待切割晶体11的保护性切割，从而有效提高了切割良品率。It can be seen that in this application, for the crystal to be cut 11 with irregular shape, the crystal to be cut 11 is encapsulated with glue through the
下面以待切割晶体11为压电晶体为例进行说明，本领域技术人员容易理解待切割晶体11不限于此。当待切割晶体11为压电晶体时，待切割晶体11的硬度较低，胶体12可以对待切割晶体11实现有效切割保护，同时待切割晶体11具有压电面，在对待切割晶体11进行灌胶封装的步骤中，由于待切割晶体11固定，其设置姿态并未发生变化，不会造成待切割晶体11压电方向的变化或移位。其中，压电面为待切割晶体11生长固有面，且是待切割晶体11中有规则的一面，压电面已为本领域技术人员所熟知，在此不再赘述。例如，待切割晶体11为水溶性压电晶体，则待切割晶体11极易溶于水，通过对待切割晶体11进行灌胶封装可以实现待切割晶体11在切割装置上的粘接。In the following description, the
需要说明的是，在步骤S1~S3中，待切割件1的顶面1a和底面1b沿上下方向相对设置，在步骤S4中，待切割件1的顶面1a和底面1b不一定沿上下方向相对设置，例如可以沿左右方向、或前后方向等相对，也就是说，待切割件1在切割过程中的放置姿态与待切割件1在形成过程中的放置姿态可以相同、也可以不同。It should be noted that, in steps S1-S3, the
根据本发明的晶体的切割方法，通过将待切割晶体11进行灌胶封装以使待切割晶体11和固化后的胶体12形成待切割件1，使得待切割件1具有较高的硬度，且便于固定，使得待切割件1满足切割装置例如金刚石切割装置的材料硬度要求以及固定要求，同时胶体12可以对待切割晶体11进行切割保护，以避免待切割晶体11在切割过程中被研磨成粉末，从而有效提高了切割良品率。对于压电晶体而言，本申请中的切割方法不会造成压电晶体压电方向的变化或移位。According to the crystal cutting method of the present invention, the
可以理解的是，步骤S2中的灌胶量（或者胶体12没过待切割晶体11的高度）可以根据实际需求具体设置。It can be understood that the amount of glue poured in step S2 (or the height of the
在本发明的一些实施例中，在步骤S1中，将待切割晶体11与灌胶空间20的底壁和周壁分别间隔设置，即待切割晶体11与灌胶空间20的底壁上下间隔设置，且待切割晶体11与灌胶空间20的周壁内外间隔设置；可见，胶体12固化后形成的待切割件1的底面1b与待切割晶体11的底端间隔设置，且待切割件1的周侧面与待切割晶体11的周表面间隔设置，便于使得胶体12完全包裹待切割晶体11，则胶体12可以对待切割晶体11起到全方位的切割保护，有利于进一步保证切割成品率。In some embodiments of the present invention, in step S1, the crystal to be cut 11 and the bottom wall and the peripheral wall of the
在一些可选实施例中，在步骤S1之前，晶体的切割方法还包括以下步骤：S0、向灌胶空间20内灌胶，以使胶体12填充灌胶空间20的底部，该部分胶体12完全覆盖灌胶空间20的底壁，则该部分胶体12固化后位于待切割件1的底部，且在该部分胶体12固化后，再将待切割晶体11置于灌胶空间20内，使得待切割晶体11设于上述固化后的胶体12的上侧，便于使得待切割晶体11与灌胶空间20的底壁间隔开，可以无需通过其他限位结构来限制待切割晶体11的高度以使待切割晶体11与灌胶空间20的底壁间隔开，提升了操作便利性。In some optional embodiments, before step S1, the crystal cutting method also includes the following steps: S0, pouring glue into the
此外，对于灌胶空间20的底壁形成为非平面时，比如灌胶空间20的底壁包括多个不平行的平面、和/或、曲面，胶体12可以将灌胶空间20底部不平整部分填充，保证在步骤S4中切割时至少将整个待切割晶体11完全切透，同时如果固定组件通过模具2的一部分与固定面固定，由于胶体12实现填充可以提升待切割晶体11的高度，则在保证将整个待切割晶体11完全切透的前提下，便于避免切割到模具2。In addition, when the bottom wall of the
可以理解的是，步骤S0中的灌胶量（或者胶体12的厚度）可以根据实际需求具体设置。It can be understood that the amount of glue (or the thickness of the glue 12 ) in step S0 can be specifically set according to actual needs.
当然，本申请不限于此；在其他实施例中，可以无需设置步骤S0，此时在步骤S1中，通过悬吊组件使得待切割晶体11悬置在灌胶空间20内，此时在步骤S2中可以分多次想灌胶空间20内灌胶，例如第一次灌胶过程中使得胶体12没过待切割晶体11的底端，以使第一次灌胶后固化的胶体12可以对待切割晶体11起到限位、固定的作用，后面灌胶过程中可以撤掉悬吊组件。Of course, the present application is not limited thereto; in other embodiments, step S0 may not be required, at this time, in step S1, the crystal to be cut 11 is suspended in the
在一些可选实施例中，在步骤S1中，将待切割晶体11粘接于灌胶空间20的底壁，同样可以将待切割晶体11与灌胶空间20的底壁间隔开，使得待切割晶体11的底部也有保护层。可选地，待切割晶体11与灌胶空间20底壁之间的粘接件与胶体12可以均为AB胶水。In some optional embodiments, in step S1, the
在本发明的一些实施例中，在步骤S2中，震动模具2，以便使得灌注的胶体12分布均匀、平整，且可以去除胶体12中的气泡，以便于保证胶体12固化后在待切割晶体11的外侧形成较为均衡的保护层，便于提升切割稳定性。In some embodiments of the present invention, in step S2, the
可以理解的是，在灌胶的同时或者在灌胶结束后震动模具2。例如，在灌胶的同时震动模具2，可以包括但不限于，整个灌胶过程中通过多次间断的灌胶实现，每次灌胶结束后适当震动模具2，或者整个灌胶过程可以通过连续灌胶或多次间断灌胶实现，边灌胶边震动模具2。It is understandable that the
在一些实施例中，待切割晶体11为水溶性晶体，可溶于水，此时胶体12构造成胶体12固化后与待切割晶体11不粘接、且与模具2粘接，则固化后的胶体12可以对待切割晶体11仅起到包裹、限位作用，便于在步骤S4对待切割件1切割成晶片后，固化后的胶体12直接与晶片分离，以实现胶体12的自动脱落，无需对晶片进行脱胶等操作，简化了晶体的切割。例如，胶体12为AB胶水，模具2为树脂件，则胶体12具有良好的透明性，可常温固化、环保无毒，且具有良好的韧性，使得胶体12可以对待切割晶体11起到有效保护，同时AB胶水固化后不与水溶性晶体粘接、而与树脂件粘接。In some embodiments, the
在一些实施例中，在步骤S1中，将待切割晶体11置于模具2的灌胶空间20内，包括：灌胶空间20的底壁与固定面对应，即灌胶空间20的底壁用于使得与其接触的待切割件1的表面形成为固定面，将待切割晶体11的压电面（例如，图4中待切割晶体11的左侧面）与灌胶空间20的底壁垂直设置，则在步骤S4中，可以自待切割件1的背离固定面的一侧朝向固定面所在的一侧切割，使得待切割件1的固定面所在的一侧形成为“收刀侧”，而待切割晶体11的压电面又与固定面垂直，则便于保证切割晶片的平整切割。In some embodiments, in step S1, the crystal to be cut 11 is placed in the
在一些可选实施例中，在步骤S1中，将待切割晶体11的压电面粘接于灌胶空间20的侧壁，同样可以使得压电面与底壁垂直设置，且可以将待切割晶体11与灌胶空间20的底壁间隔开，使得待切割晶体11的底部也有保护层，而且便于实现待切割晶体11在灌胶空间20内的固定，同时有利于使得待切割晶体11的压电面与待切割件1的底壁和/或顶壁垂直，而待切割件1的底壁和顶壁中的其中一个可以形成为固定面，则在步骤S4中，可以自待切割件1的背离固定面的一侧朝向固定面所在的一侧切割，使得待切割件1的固定面所在的一侧形成为“收刀侧”，而待切割晶体11的压电面又与固定面垂直，则便于保证切割晶片的平整切割。In some optional embodiments, in step S1, the piezoelectric surface of the crystal to be cut 11 is bonded to the side wall of the
在本发明的一些实施例中，如图4-图6所示，灌胶空间20形成为柱状结构，可以使得待切割件1形成为柱状结构，则待切割件1具有规则的形状，进一步便于待切割件1在切割时的固定，便于待切割件1的切割，同时便于简化模具2的结构。In some embodiments of the present invention, as shown in FIGS. 4-6 , the
可选地，灌胶空间20的横截面形状为多边形、或圆形、或椭圆形等，则待切割件1可以形成为多棱柱、或圆柱、或其他形状的柱体结构。Optionally, the cross-sectional shape of the
在一些可选实施例中，如图4-图6所示，模具2包括底板21和多个侧板22，多个侧板22依次活动相连以形成为环形结构，多个侧板22的顶部限定出灌胶口20a，底板21连接在多个侧板22的底部，使得多个侧板22形成为环形结构具有稳定的形状，底板21与多个侧板22共同限定出灌胶空间20。In some optional embodiments, as shown in FIGS. 4-6 , the
其中，多个侧板22依次活动相连，可以理解为，多个侧板22依次收尾相连，任意相邻两个侧板22活动相连，则在没有其他作用力的限制下，相邻两个侧板22可以在至少一个方向上相对运动。可选地，相邻两个侧板22枢转相连。Among them, a plurality of
需要说明的是，在本申请的描述中，“多个”的含义是两个或两个以上。在上述模具2中，多个侧板22中的至少两个可拆卸相连，且多个侧板22中的上述至少两个分别与底板21可拆卸相连，则在步骤S3中胶体12固化后，可以将多个侧板22中的上述至少两个拆离，以为待切割件1的后续脱模提供足够的避让空间，方便待切割件1的快速脱模。It should be noted that, in the description of this application, "plurality" means two or more. In the
可选地，多个侧板22中任意相邻两个侧板22可拆卸相连，且每个侧板22与底板21可拆卸相连，进一步方便了待切割件1的脱模。Optionally, any two
可选地，多个侧板22中的上述至少两个可拆卸粘接，多个侧板22中的上述至少两个分别与底板21可拆卸粘接，便于实现模具2的快速拆装。Optionally, the above-mentioned at least two of the
例如，侧板22为两个时，该两个侧板22可拆卸相连，且该两个侧板22分别与底板21可拆卸相连，则在胶体12固化后，将两个侧板22拆分，且将两个侧板22分别与底板21拆分，以实现待切割件1的快速脱模；侧板22为三个时，三个中的其中两个侧板22可拆卸相连，上述其中两个侧板22分别与其余一个侧板22活动相连，且上述其中两个侧板22分别与底板21可拆卸相连，则在胶体12固化后，将上述其中两个侧板22拆分且彼此远离，且将上述其中两个侧板22分别与底板21拆分，待切割件1可以通过上述其中两个侧板22先前对应的区域脱模；侧板22为三个或四个时，任意相邻两个侧板22可拆卸相连，每个侧板22与底板21可拆卸相连，则在胶体12固化后，将所有侧板22与底板21拆分，以实现待切割件1的快速脱模。当然，侧板22还可以为五个或五个以上。For example, when there are two
可见，与底板21可拆卸相连的侧板22的数量小于或等于所有侧板22的数量。而且，底板21的尺寸、侧板22的数量以及尺寸等模具2的规格可以根据待切割晶体11进行适应性设置。It can be seen that the number of
例如，在图4-图6的示例中，灌胶空间20形成为正方体或长方体，侧板22为四个，每个侧板22形成为正方形结构或长方形结构，在保证满足待切割晶体11的灌胶需求的前提下，便于简化模具2的结构；其中侧板22的长度为L、高度为H，30mm≤L≤200mm，30mm≤H≤200mm。当然，侧板22还可以形成为其他多边形结构。For example, in the example of Fig. 4-Fig. 6, the
可选地，侧板22和底板21均为树脂板，便于使得模具2具有良好的使用可靠性。当然，模具2的材质不限于此。Optionally, both the
在一些实施例中，如图3所示，每个侧板22与底板21可拆卸相连，在步骤S1中，将待切割晶体11置于模具2的灌胶空间20内，包括：底板21的顶面与固定面对应，即底板21的顶面用于使得与其接触的待切割件1的表面形成为固定面，将待切割晶体11的压电面与底板21的顶面垂直设置粘接，粘接而后将多个侧板22间隔设在待切割晶体11的外周侧，此时底板21与多个侧板22限定出灌胶空间20，而待切割晶体11位于灌胶空间20内，可见待切割晶体11无需通过灌胶口20a置于灌胶空间20内，有利于降低对灌胶口20a的大小、形状等设计要求，同时方便了待切割晶体11与模具2的组装；同时，在步骤S4中，可以自待切割件1的背离固定面的一侧朝向固定面所在的一侧切割，使得待切割件1的固定面所在的一侧形成为“收刀侧”，而待切割晶体11的压电面又与固定面垂直，则便于保证切割晶片的平整切割。In some embodiments, as shown in FIG. 3 , each
可选地，将多个侧板22间隔设在待切割晶体11的外周侧时，可以将待切割晶体11的压电面与对应侧板22粘接固定，以实现待切割晶体11在灌胶空间20内的定位。Optionally, when a plurality of
根据本发明第二方面实施例的压电晶片，采用根据本发明上述第一方面实施例的晶体的切割方法制备得到。The piezoelectric wafer according to the embodiment of the second aspect of the present invention is prepared by using the crystal cutting method according to the above embodiment of the first aspect of the present invention.
根据本发明实施例的压电晶片，通过采用上述的切割方法，方便切割，且便于保证压电晶片的平整性，提升良品率。According to the piezoelectric wafer of the embodiment of the present invention, by adopting the above-mentioned cutting method, it is convenient to cut, and it is convenient to ensure the flatness of the piezoelectric wafer, and improve the yield rate.
在一些实施例中，压电晶片的厚度为t，0.05mm≤t≤2mm。显然，本申请中通过对待切割晶体11进行灌胶封装，在保证切割良品率的前提下，可以扩大待切割晶体11切割成压电晶片的厚度范围，以更好地满足产业化生产需求。In some embodiments, the thickness of the piezoelectric wafer is t, 0.05mm≤t≤2mm. Obviously, in this application, by encapsulating the
在一些实施例中，压电晶片为水溶性压电晶体，通过将压电晶片进行包裹限位，使得晶体易于被切割，且切割后无需脱胶，简化了晶片的生产。In some embodiments, the piezoelectric wafer is a water-soluble piezoelectric crystal. By wrapping and limiting the piezoelectric wafer, the crystal can be easily cut without degumming after cutting, which simplifies the production of the wafer.
可以理解的是，压电晶片的厚度可以根据实际需求具体设置，例如t可以为0.05mm、或0.1mm、或0.25mm、或0.5mm、或0.75mm、或1mm、或1.4mm、或2mm等，以便于满足不同用户的差异化需求。It can be understood that the thickness of the piezoelectric wafer can be specifically set according to actual needs, for example, t can be 0.05mm, or 0.1mm, or 0.25mm, or 0.5mm, or 0.75mm, or 1mm, or 1.4mm, or 2mm, etc. , in order to meet the differentiated needs of different users.
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Rear", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Axial", "Radial", "Circumferential" The orientation or positional relationship indicated by etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific Azimuth configuration and operation, therefore, should not be construed as limiting the invention. In addition, the features defined as "first" and "second" may explicitly or implicitly include one or more of these features.
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, references to the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific examples," or "some examples" are intended to mean that the implementation A specific feature, structure, material, or characteristic described by an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and modifications can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the invention is defined by the claims and their equivalents.
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