CN115165787A - Mask plate coating LCVD carrier gas concentration adjusting and measuring equipment - Google Patents
Mask plate coating LCVD carrier gas concentration adjusting and measuring equipmentDownload PDFInfo
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- 239000012159carrier gasSubstances0.000titleclaimsabstractdescription99
- 239000011248coating agentSubstances0.000titleclaimsabstractdescription46
- 238000000576coating methodMethods0.000titleclaimsabstractdescription46
- 238000001182laser chemical vapour depositionMethods0.000titleclaimsdescription20
- 239000007789gasSubstances0.000claimsabstractdescription311
- 238000005259measurementMethods0.000claimsabstractdescription68
- 230000033228biological regulationEffects0.000claimsabstractdescription3
- 235000013405beerNutrition0.000claimsabstract2
- 239000011651chromiumSubstances0.000claimsdescription68
- 230000001105regulatory effectEffects0.000claimsdescription52
- 230000003287optical effectEffects0.000claimsdescription32
- VYZAMTAEIAYCRO-UHFFFAOYSA-NChromiumChemical compound[Cr]VYZAMTAEIAYCRO-UHFFFAOYSA-N0.000claimsdescription25
- 239000000843powderSubstances0.000claimsdescription23
- 230000001681protective effectEffects0.000claimsdescription23
- 229910052804chromiumInorganic materials0.000claimsdescription18
- 238000002835absorbanceMethods0.000claimsdescription12
- 230000005540biological transmissionEffects0.000claimsdescription11
- 238000010521absorption reactionMethods0.000claimsdescription9
- 230000008021depositionEffects0.000abstractdescription4
- 239000004973liquid crystal related substanceSubstances0.000abstract1
- XKRFYHLGVUSROY-UHFFFAOYSA-NArgonChemical compound[Ar]XKRFYHLGVUSROY-UHFFFAOYSA-N0.000description52
- 229910052786argonInorganic materials0.000description26
- 230000007547defectEffects0.000description8
- 239000010408filmSubstances0.000description8
- 238000000034methodMethods0.000description7
- 239000000126substanceSubstances0.000description7
- 230000007423decreaseEffects0.000description6
- 238000001514detection methodMethods0.000description5
- 230000000694effectsEffects0.000description4
- 238000007789sealingMethods0.000description4
- 230000015572biosynthetic processEffects0.000description3
- 238000006731degradation reactionMethods0.000description3
- 238000000151depositionMethods0.000description3
- 239000000203mixtureSubstances0.000description3
- 239000011358absorbing materialSubstances0.000description2
- 230000008033biological extinctionEffects0.000description2
- 230000003750conditioning effectEffects0.000description2
- 230000003247decreasing effectEffects0.000description2
- 238000010586diagramMethods0.000description2
- 238000004519manufacturing processMethods0.000description2
- 239000000463materialSubstances0.000description2
- 239000012495reaction gasSubstances0.000description2
- 238000000859sublimationMethods0.000description2
- 230000008022sublimationEffects0.000description2
- 230000009286beneficial effectEffects0.000description1
- 230000015556catabolic processEffects0.000description1
- 238000005530etchingMethods0.000description1
- 238000010438heat treatmentMethods0.000description1
- 239000012535impuritySubstances0.000description1
- 239000007788liquidSubstances0.000description1
- 238000001782photodegradationMethods0.000description1
- 239000010453quartzSubstances0.000description1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-Nsilicon dioxideInorganic materialsO=[Si]=OVYPSYNLAJGMNEJ-UHFFFAOYSA-N0.000description1
- 238000002798spectrophotometry methodMethods0.000description1
- 239000000758substrateSubstances0.000description1
- 239000010409thin filmSubstances0.000description1
- 238000002834transmittanceMethods0.000description1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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Abstract
Description
Translated fromChinese技术领域technical field
本发明属于掩膜版镀膜设备领域，更具体的说涉及一种掩膜版镀膜LCVD载气浓度调节与测量设备。The invention belongs to the field of mask plate coating equipment, and more particularly relates to a mask plate coating LCVD carrier gas concentration adjustment and measurement device.
背景技术Background technique
掩膜版也叫Mask或者光罩，作为一种图形的载体，通过显影蚀刻等工艺形成所需的图形，再通过曝光机将图形转移到显示基板上。在掩膜版表面一般镀有一层100nm厚度的铬(Cr)膜，由于工艺原因，部分Cr层会缺失，产生少Cr缺陷，少Cr位置会导致曝光时漏光，造成产品在使用时不需要曝光的地方产生曝光。一般地，上述这种缺陷需要是使用LCVD(Laserchemicalvapordeposition，激光化学气相沉积)设备来修补。LCVD修补空白缺陷一般是先通过加热修补材料六羰基铬(Cr(CO)6)，这种物质一般在40°会升华成气体，再通过氩气(Ar)作为载体和保护气，将含有Cr(CO)6的载气(载气中含有升华的Cr(CO)6和氩气)送到需要修补的缺陷处，经一束特定波长的激光照射后，Cr(CO)6气体分子发生光降解和热降解反应，形成一层100nm左右厚度的Cr膜覆盖在缺陷处，从而实现对空白缺陷的修复。The mask is also called Mask or photomask. As a kind of pattern carrier, the required pattern is formed by processes such as developing and etching, and then the pattern is transferred to the display substrate by the exposure machine. A 100nm thick chromium (Cr) film is generally plated on the surface of the mask. Due to process reasons, part of the Cr layer will be missing, resulting in less Cr defects. The less Cr position will lead to light leakage during exposure, resulting in products that do not need exposure during use. where exposure occurs. Generally, the above-mentioned defects need to be repaired by using LCVD (Laserchemical vapor deposition) equipment. LCVD repairing blank defects is generally done by heating the repair material chromium hexacarbonyl (Cr(CO)6 ), which is generally sublimated into a gas at 40°, and then uses argon (Ar) as a carrier and protective gas to contain Cr The carrier gas of (CO)6 (the carrier gas contains sublimated Cr(CO)6 and argon) is sent to the defect that needs to be repaired. After being irradiated by a laser of a specific wavelength, the Cr(CO)6 gas molecules generate light. Degradation and thermal degradation reaction, a layer of Cr film with a thickness of about 100nm is formed to cover the defects, thereby realizing the repair of blank defects.
由于在Cr膜形成过程中，一些工艺参数如激光功率、反应气体温度、反应气体流量等条件非常敏感，参数的不稳定会导致形成的Cr膜不够致密，造成Cr膜轻微透光或者粘附力不佳脱落。其中含Cr(CO)6载气对薄膜的形成非常敏感，目前常规的LCVD设备气路中只有流量计监测载气流量，并不能对载气中Cr(CO)6含量进行监测，当粉罐中的Cr粉量随使用减少后，载气中Cr(CO)6含量降低时，不能及时发现，影响LCVD的沉积效果。Since some process parameters such as laser power, reaction gas temperature, reaction gas flow and other conditions are very sensitive during the formation of Cr film, the instability of the parameters will cause the formed Cr film to not be dense enough, resulting in slight light transmission or adhesion of the Cr film. Bad shedding. Among them, the carrier gas containing Cr(CO)6 is very sensitive to the formation of thin films. At present, in the gas circuit of conventional LCVD equipment, only the flow meter monitors the flow of the carrier gas, and the content of Cr(CO)6 in the carrier gas cannot be monitored. When the amount of Cr powder in the carrier gas decreases with use, when the content of Cr(CO)6 in the carrier gas decreases, it cannot be found in time, which affects the deposition effect of LCVD.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种掩膜版镀膜LCVD载气浓度调节与测量设备，利用朗伯比尔定律对载气中Cr(CO)6含量进行检测，及时地了解LCVD载气浓度及载气中Cr(CO)6含量，当载气浓度及载气中Cr(CO)6含量降低或者升高时，可以通过调整气体配比使气体浓度在规格范围内，保证了沉积的薄膜致密性，不会发生透光和脱落影响产品品质。The purpose of the present invention is to provide a kind of mask plate coating LCVD carrier gas concentration adjustment and measurement equipment, utilize Lambert Beer's law to detect Cr(CO)6 content in the carrier gas, know the LCVD carrier gas concentration and the carrier gas in time in time. Cr(CO)6 content, when the carrier gas concentration and the Cr(CO)6 content in the carrier gas decrease or increase, the gas concentration can be adjusted to make the gas concentration within the specification range to ensure the compactness of the deposited film, and it is not Light transmission and shedding will occur and affect product quality.
本发明技术方案一种掩膜版镀膜LCVD载气浓度调节与测量设备，包括并接且均与保护气罐(1)的出口连通的载气气路(D)和调节气路(C)，还包括工作气路(B)和测量气路(E)；所述工作气路(B)和测量气路(E)并接且均连接在载气气路(D)和调节气路(C)的输出端；The technical solution of the present invention is a mask plate coating LCVD carrier gas concentration adjustment and measurement device, comprising a carrier gas gas path (D) and a regulating gas path (C) that are connected in parallel and communicated with the outlet of the protective gas tank (1), It also includes a working gas circuit (B) and a measuring gas circuit (E); the working gas circuit (B) and the measuring gas circuit (E) are connected in parallel and are both connected to the carrier gas circuit (D) and the regulating gas circuit (C). ) output terminal;
所述载气气路(D)包括与保护气罐(1)的出口连接的载气流量计(F1)和连接在载气流量计(F1)后部的含铬粉罐(2)；The carrier gas path (D) includes a carrier gas flowmeter (F1) connected to the outlet of the protective gas tank (1) and a chromium-containing powder tank (2) connected to the rear of the carrier gas flowmeter (F1);
所述调节气路(C)包括与保护气罐(1)的出口连接的调节气流量计(F2)；The regulating gas circuit (C) includes a regulating gas flow meter (F2) connected with the outlet of the protective gas tank (1);
所述工作气路(B)包括镀膜阀(Z1)和与镀膜阀(Z1)出口连接的掩膜版镀膜装置(4)；镀膜阀(Z1)的进口通过第一三通(B1)与含铬粉罐(2)的出口和调节气路(C)输出端连接；所述调节气路(C)输出端通过节流阀(Z2)与第一三通(B1)连接；The working gas circuit (B) includes a coating valve (Z1) and a mask coating device (4) connected to the outlet of the coating valve (Z1); the inlet of the coating valve (Z1) passes through the first three-way (B1) and contains The outlet of the chrome powder tank (2) is connected with the output end of the regulating air circuit (C); the output end of the regulating air circuit (C) is connected with the first three-way (B1) through the throttle valve (Z2);
所述测量气路(E)包括测量阀(Z3)和连接在测量阀(Z3)输出端的气体浓度测量装置(5)；所述测量阀(Z3)的进口通过第二三通(B2)与载气气路(D)和调节气路(C)的输出端连接；The measuring gas circuit (E) comprises a measuring valve (Z3) and a gas concentration measuring device (5) connected to the output end of the measuring valve (Z3); the inlet of the measuring valve (Z3) is connected with the second three-way (B2) through the second three-way (B2). The carrier gas circuit (D) and the output end of the regulating gas circuit (C) are connected;
所述气体浓度测量装置包括一红外光源、光电倍增管检测器、由所述红外光源发射红外光的测量光路以及设置在测量光路中且被红外光穿过的气体管；所述红外光源和光电倍增管检测器分别设置在所述气体管的两侧，所述气体管上设置有测量气入口和测量气出口，经过测量阀(Z3)的测量气由所述测量气入口进入气体管，红外光源发射出的红外光被气体管内的测量气吸收后，剩余部分穿过所述气体管被所述光电倍增管检测器检测，光电倍增管检测器检测出透射光强；通过将红外光源发出的红外光的入射光强与透射光强做比值，获得被测量气吸光度；最后依据朗伯比尔定律，根据被测量气吸光度计算出测量气浓度。The gas concentration measuring device includes an infrared light source, a photomultiplier tube detector, a measuring light path that emits infrared light from the infrared light source, and a gas tube arranged in the measuring light path and passing through the infrared light; the infrared light source and the photoelectric The multiplier tube detectors are respectively arranged on both sides of the gas tube, and the gas tube is provided with a measurement gas inlet and a measurement gas outlet, and the measurement gas passing through the measurement valve (Z3) enters the gas tube from the measurement gas inlet, and the infrared After the infrared light emitted by the light source is absorbed by the measuring gas in the gas tube, the remaining part passes through the gas tube and is detected by the photomultiplier tube detector, and the photomultiplier tube detector detects the transmitted light intensity; The ratio of the incident light intensity of the infrared light to the transmitted light intensity is used to obtain the measured gas absorbance; finally, according to Lambert Beer's law, the measured gas concentration is calculated according to the measured gas absorbance.
优选地，所述测量光路包括第一测量光路和第二测量光路，气体管包括分别设置在第一测量光路和第二测量光路中的第一气体管和第二气体管，所述第一气体管和第二气体管参数相同；Preferably, the measurement optical path includes a first measurement optical path and a second measurement optical path, the gas pipe includes a first gas pipe and a second gas pipe respectively arranged in the first measurement optical path and the second measurement optical path, the first gas pipe The parameters of the tube and the second gas tube are the same;
所述红外光源后部依次设置有单色器、斩波器和第一半透半反镜，第一半透半反镜的透光路为第一测量光路，第一半透半反镜的反光路为第二测量光路；The rear of the infrared light source is sequentially provided with a monochromator, a chopper and a first half mirror, the light transmission path of the first half mirror is the first measurement light path, and the first half mirror is The reflection light path is the second measurement light path;
第一测量光路中，所述第一气体管设置在第一半透半反镜的透光路上，第一气体管后部设置有第一平面镜，第一平面镜的反光路上设置有第二半透半反镜，所述光电倍增管检测器设置在第二半透半反镜的反光路上，第二半透半反镜将第一平面镜的反射光反射至光电倍增管检测器上；In the first measurement optical path, the first gas pipe is arranged on the light transmission path of the first half mirror, the rear of the first gas pipe is provided with a first plane mirror, and the light reflection path of the first plane mirror is provided with a second half mirror. a half mirror, the photomultiplier tube detector is arranged on the light reflection path of the second half mirror, and the second half mirror reflects the reflected light of the first plane mirror to the photomultiplier tube detector;
第二测量光路中，第一半透半反镜的反射光路上设置有第二平面镜，第二气体管设置在第二平面镜的反射光路上，第二半透半反镜同时位于第二气体管的透光路上，第二半透半反镜透过第二气体管的透射光至光电倍增管检测器。In the second measurement light path, a second plane mirror is arranged on the reflected light path of the first half mirror, the second gas pipe is arranged on the reflected light path of the second plane mirror, and the second half mirror is also located on the second gas pipe On the light transmission path, the second half mirror transmits the transmitted light of the second gas tube to the photomultiplier tube detector.
优选地，所述第一测量光路和第二测量光路中分别设置有第一遮光罩和第二遮光罩，所述第一遮光罩和第二遮光罩分别设置在第一气体管和第二气体管前部。Preferably, the first measurement optical path and the second measurement optical path are respectively provided with a first light shield and a second light shield, and the first light shield and the second light shield are respectively arranged on the first gas pipe and the second gas pipe. Tube front.
优选地，所述测量阀(Z3)的进口通过第二三通(B2)与调节气流量计(F2)出口和节流阀(Z2)远离第一三通(B1)端连接。Preferably, the inlet of the measuring valve (Z3) is connected with the outlet of the regulated gas flow meter (F2) and the end of the throttle valve (Z2) away from the first tee (B1) through the second three-way (B2).
本发明技术方案的一种掩膜版镀膜LCVD载气浓度调节与测量设备的有益效果是：The beneficial effects of a mask plate coating LCVD carrier gas concentration adjustment and measurement device of the technical solution of the present invention are:
1、通过增加与载气气路并接的调节气路，对载气浓度进行调节。在含铬粉罐中Cr(CO)6含量较高时，通过对调节气路中调节气流量的调节，增加调节气量，实现降低载气浓度，即对进入内的掩膜版镀膜装置中的Cr(CO)6浓度降低。在含铬粉罐中Cr(CO)6含量较低时，通过对调节气路中调节气量调节，降低调节气量，实现提高载气浓度，即通过降低调节气量，来提高进入掩膜版镀膜装置中的Cr(CO)6浓度。在含铬粉罐中载气中Cr(CO)6含量足够低时，及时的向含铬粉罐中补充Cr(CO)6，确保载气中Cr(CO)6含量在规定范围内，确保LCVD的沉积效果。1. Adjust the carrier gas concentration by adding a regulating gas path connected in parallel with the carrier gas path. When the content of Cr(CO)6 in the chrome-containing powder tank is relatively high, by adjusting the air flow rate in the adjustment gas path, the adjustment air flow is increased to reduce the carrier gas concentration, that is, the concentration of the carrier gas is reduced. Cr(CO)6 concentration decreased. When the content of Cr(CO)6 in the chrome-containing powder tank is low, by adjusting the gas volume in the regulating gas path, reducing the regulating gas volume, the carrier gas concentration can be increased, that is, by reducing the regulating gas volume, the entry into the mask coating device can be increased. Cr(CO)6 concentration in . When the content of Cr(CO)6 in the carrier gas in the chromium-containing powder tank is low enough, replenish Cr(CO)6 in the chromium-containing powder tank in time to ensure that the Cr(CO)6 content in the carrier gas is within the specified range and ensure that Deposition effect of LCVD.
2、通过气体浓度测量装置，依据朗伯比尔定律对气体浓度进行检测，检测精度高。2. Through the gas concentration measuring device, the gas concentration is detected according to Lambert Beer's law, and the detection accuracy is high.
附图说明Description of drawings
图1为本发明技术方案的一种掩膜版镀膜LCVD载气浓度调节与测量设备结构示意图，Fig. 1 is a kind of mask plate coating LCVD carrier gas concentration adjustment and measuring equipment structural schematic diagram of the technical solution of the present invention,
图2为气体浓度测量装置结构和原理图。Figure 2 is the structure and principle diagram of the gas concentration measuring device.
具体实施方式Detailed ways
为便于本领域技术人员理解本发明技术方案，现结合说明书附图对本发明技术方案做进一步的说明。In order to facilitate those skilled in the art to understand the technical solution of the present invention, the technical solution of the present invention will now be further described with reference to the accompanying drawings.
如图1所示，本发明技术方案一种掩膜版镀膜LCVD载气浓度调节与测量设备，包括并接且均与保护气罐1的出口连通的载气气路D和调节气路C，还包括工作气路B和测量气路E。工作气路B和测量气路E并接且均连接在载气气路D和调节气路C的输出端。As shown in Figure 1, the technical solution of the present invention is a mask plate coating LCVD carrier gas concentration adjustment and measurement device, including a carrier gas gas path D and an adjustment gas path C that are connected in parallel and communicated with the outlet of the protective gas tank 1, It also includes working gas path B and measuring gas path E. The working gas path B and the measuring gas path E are connected in parallel and are both connected to the output ends of the carrier gas path D and the regulating gas path C.
载气气路D包括与保护气罐1的出口连接的载气流量计F1和连接在载气流量计F1后部的含铬粉罐2。The carrier gas gas path D includes a carrier gas flowmeter F1 connected to the outlet of the protective gas tank 1 and a chromium-containing powder tank 2 connected to the rear of the carrier gas flowmeter F1.
调节气路C包括与保护气罐1的出口连接的调节气流量计F2。The regulating gas circuit C includes a regulating gas flow meter F2 connected to the outlet of the protective gas tank 1 .
工作气路B包括镀膜阀Z1和与镀膜阀Z1出口连接的掩膜版镀膜装置4。镀膜阀Z1的进口通过第一三通B1与含铬粉罐2的出口和调节气路C输出端连接；调节气路C输出端通过节流阀Z2与第一三通B1连接。The working gas path B includes a coating valve Z1 and a mask coating device 4 connected to the outlet of the coating valve Z1. The inlet of the coating valve Z1 is connected to the outlet of the chrome-containing powder tank 2 and the output end of the regulating air circuit C through the first three-way B1; the output end of the regulating air circuit C is connected to the first three-way B1 through the throttle valve Z2.
测量气路E包括测量阀Z3和连接在测量阀Z3输出端的气体浓度测量装置5。测量阀Z3的进口通过第二三通B2与载气气路D和调节气路C的输出端连接。The measuring gas circuit E includes a measuring valve Z3 and a gas concentration measuring device 5 connected to the output end of the measuring valve Z3. The inlet of the measuring valve Z3 is connected to the output ends of the carrier gas gas path D and the regulating gas path C through the second three-way B2.
测量阀Z3的进口通过第二三通B2与调节气流量计F2出口和节流阀Z2远离第一三通B1端连接。The inlet of the measuring valve Z3 is connected with the outlet of the regulated gas flow meter F2 and the end of the throttle valve Z2 away from the first three-way B1 through the second three-way B2.
基于上述技术方案，保护气罐1内的氩气分别两路，一路氩气通过载气流量计F1进入含铬粉罐2，与含铬粉罐2内的Cr(CO)6一起由含铬粉罐2出口排出，再通过第一三通B1和镀膜阀Z1进入掩膜版镀膜装置4。另一路氩气通过调节气流量计F2和节流阀Z2进入第一三通B1和镀膜阀Z1，与载气混合最终也进入掩膜版镀膜装置4。掩膜版30置于掩膜版镀膜装置4上，通过激光发射装置3发射出激光并照射至掩膜版镀膜装置4和掩膜版30上，使得通过镀膜阀Z1的载气(载气中含有升华的Cr(CO)6和氩气)在激光照射后，Cr(CO)6气体分子发生光降解和热降解反应，形成一层100nm左右厚度的Cr膜覆盖在掩膜版的缺陷处，从而实现对空白缺陷的修复。Based on the above technical solution, the argon in the protective gas tank 1 is divided into two channels, and one channel of argon enters the chromium-containing powder tank 2 through the carrier gas flow meter F1, and together with Cr(CO)6 in the chromium-containing powder tank 2 The powder tank 2 is discharged from the outlet, and then enters the mask coating device 4 through the first three-way B1 and the coating valve Z1. The other argon gas enters the first three-way B1 and the coating valve Z1 through the regulating gas flow meter F2 and the throttle valve Z2, and is mixed with the carrier gas and finally enters the mask coating device 4. The
上述技术方案中，保护气罐1内进入含铬粉罐2中的氩气称之为保护气，且量恒定。保护气氩气与含铬粉罐2中含有升华的Cr(CO)6混合，形成载气，即载气中含有升华的Cr(CO)6和保护气氩气。保护气罐1中排出的另一路氩气通过调节气流量计F2，称之为调节气，其与载气混合，形成工作气，即工作气中含有调节气和载气。通过调节调节气的流量大小来调节工作气中载气的浓度，即调节工作气中Cr(CO)6气体的浓度。In the above technical solution, the argon gas entering the chromium-containing powder tank 2 in the protective gas tank 1 is called protective gas, and the amount is constant. The protective gas argon is mixed with the sublimated Cr(CO)6 contained in the chromium-containing powder tank 2 to form a carrier gas, that is, the carrier gas contains the sublimated Cr(CO)6 and the protective gas argon. The other argon gas discharged from the protective gas tank 1 passes through the regulating gas flow meter F2, which is called the regulating gas, and is mixed with the carrier gas to form the working gas, that is, the working gas contains the regulating gas and the carrier gas. The concentration of the carrier gas in the working gas is adjusted by adjusting the flow rate of the regulating gas, that is, the concentration of the Cr(CO)6 gas in the working gas is adjusted.
载气浓度调节公式依据为：The carrier gas concentration adjustment formula is based on:
所以，上述技术方案中，通过增加或降低调节气量，即可实现对载气浓度进行调节。因含铬粉罐2中升华的Cr(CO)6量随着工作时长减少，这样对调节气量(调节气流量)进行进一步的降低调节，同样是可以提高工作气中载气浓度。在含铬粉罐中Cr(CO)6含量较高时(工作刚开始时或刚刚完成铬粉补充时)，通过对调节气路中调节气流量的调节，增加调节气量，实现降低载气浓度，即对进入内的掩膜版镀膜装置中的Cr(CO)6浓度降低。在含铬粉罐中Cr(CO)6含量较低时，通过对调节气路中调节气量调节，降低调节气量，实现提高载气浓度，即通过降低调节气量，来提高进入掩膜版镀膜装置中的Cr(CO)6浓度。在含铬粉罐中载气中Cr(CO)6含量足够低时，及时的向含铬粉罐中补充Cr(CO)6，确保载气中Cr(CO)6含量在规定范围内，确保LCVD的沉积效果。Therefore, in the above technical solution, the concentration of the carrier gas can be adjusted by increasing or decreasing the amount of the adjustment gas. Since the amount of Cr(CO)6 sublimated in the chromium-containing powder tank 2 decreases with the working time, further reducing and adjusting the regulating gas volume (regulating gas flow rate) can also increase the carrier gas concentration in the working gas. When the content of Cr(CO)6 in the chromium-containing powder tank is high (at the beginning of the work or when the chromium powder replenishment is just completed), by adjusting the gas flow rate in the regulating gas circuit, increasing the regulating gas volume and reducing the carrier gas concentration , that is, the concentration of Cr(CO)6 in the reticle coating device entering into it is reduced. When the content of Cr(CO)6 in the chrome-containing powder tank is low, by adjusting the gas volume in the regulating gas path, reducing the regulating gas volume, the carrier gas concentration can be increased, that is, by reducing the regulating gas volume, the entry into the mask coating device can be increased. Cr(CO)6 concentration in . When the content of Cr(CO)6 in the carrier gas in the chromium-containing powder tank is low enough, replenish Cr(CO)6 in the chromium-containing powder tank in time to ensure that the Cr(CO)6 content in the carrier gas is within the specified range and ensure that Deposition effect of LCVD.
本技术方案中，在掩膜版镀膜装置4工作一段时间后，就需要对掩膜版镀膜装置4进行停机，对载气浓度进行测量，以确保及时掌握载气浓度，又因载气为保护气氩气量和升华的Cr(CO)6量混合气，保护气氩气量不便，若载气浓度或载气量降低，则就是因为升华的Cr(CO)6量降低，以确保及时补充铬粉，确保升华的Cr(CO)6量。In this technical solution, after the mask coating device 4 works for a period of time, it is necessary to stop the mask coating device 4 and measure the carrier gas concentration to ensure that the carrier gas concentration can be grasped in time, and because the carrier gas is the protection The amount of argon gas and the amount of sublimated Cr(CO)6 mixed gas, the amount of protective gas argon is inconvenient, if the carrier gas concentration or the amount of carrier gas decreases, it is because the amount of sublimated Cr(CO)6 decreases to ensure timely replenishment of chromium powder, Ensure the amount of Cr(CO)6 for sublimation.
在对载气浓度进行测量时，分别测量调节气量和工作气量，间接得出载气量，计算出载气浓度。When measuring the carrier gas concentration, measure the regulating gas volume and the working gas volume respectively, obtain the carrier gas volume indirectly, and calculate the carrier gas concentration.
在对调节气量进行测量时，关闭镀膜阀Z1和节流阀Z2，打开测量阀Z3，这样就关闭了载气气路D和工作气路B，打开了调节气路C和测量气路E，调节气通过调节气流量计F2和测量阀Z3进入气体浓度测量装置5进行测量，获得调节气量含量。When measuring the regulating gas volume, close the coating valve Z1 and the throttle valve Z2, and open the measuring valve Z3, thus closing the carrier gas gas path D and the working gas path B, and opening the regulating gas path C and the measuring gas path E. The regulated gas enters the gas concentration measuring device 5 through the regulated gas flow meter F2 and the measuring valve Z3 for measurement to obtain the regulated gas content.
对工作气量进行测量时，关闭镀膜阀Z1，打开节流阀Z2和测量阀Z3，这样就仅仅关闭了工作气路B，打开了载气气路D调节气路C和测量气路E。载气通过节流阀Z2进入测量阀Z3并在测量阀Z3位置与通过调节气流量计F2进入测量阀Z3的调节气混合，即工作气，进入气体浓度测量装置5进行测量，获得工作气量。然后通过计算，获得载气量。When measuring the working gas volume, close the coating valve Z1, open the throttle valve Z2 and the measuring valve Z3, so that only the working gas path B is closed, and the carrier gas path D, the regulating gas path C and the measuring gas path E, are opened. The carrier gas enters the measuring valve Z3 through the throttle valve Z2 and mixes with the regulated gas entering the measuring valve Z3 through the regulating gas flow meter F2 at the position of the measuring valve Z3, that is, the working gas, and enters the gas concentration measuring device 5 for measurement to obtain the working gas volume. Then through calculation, the carrier gas amount is obtained.
如图1和图2所示，本技术方案中，气体浓度测量装置5包括一红外光源11、光电倍增管检测器17、由红外光源11发射红外光的测量光路以及设置在测量光路中且被红外光穿过的气体管。红外光源11和光电倍增管检测器17分别设置在气体管的两侧。气体管上设置有测量气入口和测量气出口，经过测量阀Z3的测量气由测量气入口进入气体管，红外光源11发射出的红外光被气体管内的测量气吸收后，剩余部分穿过气体管被光电倍增管检测器17检测，光电倍增管检测器17检测出透射光强(I1)；通过将红外光源发出的红外光的入射光强(I0)与透射光强(I1)做比值，获得被测量气吸光度A。最后依据朗伯比尔定律，根据被测量气吸光度计算出测量气浓度c。As shown in FIG. 1 and FIG. 2 , in this technical solution, the gas concentration measuring device 5 includes an infrared light source 11, a photomultiplier tube detector 17, a measuring optical path that emits infrared light from the infrared light source 11, and a measuring optical path arranged in the measuring optical path and being Gas tube through which infrared light passes. The infrared light source 11 and the photomultiplier tube detector 17 are respectively arranged on both sides of the gas tube. The gas pipe is provided with a measuring gas inlet and a measuring gas outlet. The measuring gas passing through the measuring valve Z3 enters the gas pipe from the measuring gas inlet. After the infrared light emitted by the infrared light source 11 is absorbed by the measuring gas in the gas pipe, the remaining part passes through the gas. The tube is detected by the photomultiplier tube detector 17, and the photomultiplier tube detector 17 detects the transmitted light intensity (I1). Obtain the measured gas absorbance A. Finally, according to Lambert Beer's law, the measured gas concentration c is calculated according to the measured gas absorbance.
上述技术方案中，朗伯比尔定律(Lambert-Beerlaw)是分光光度法的基本定律，是描述物质对某一波长光吸收的强弱与吸光物质的浓度及其液层厚度间的关系。朗伯比尔定律物理意义是当一束平行单色光垂直通过某一均匀非散射的吸光物质时，其吸光度A与吸光物质的浓度c及吸收层厚度b成正比，而与透光度T成反相关。吸收层厚度b为红外光穿过气体管位置的厚度。本技术方案中，气体管采用横截面边长为1cm的正方形管，即本技术方案中，吸收层厚度b为1cm。In the above technical solution, Lambert-Beerlaw is the basic law of spectrophotometry, which describes the relationship between the strength of a substance absorbing light of a certain wavelength and the concentration of the absorbing substance and the thickness of the liquid layer. The physical meaning of Lambert Beer's law is that when a beam of parallel monochromatic light vertically passes through a uniform non-scattering light absorbing material, its absorbance A is proportional to the concentration c of the light absorbing material and the thickness b of the absorbing layer, and is proportional to the transmittance T. Anticorrelation. The thickness b of the absorption layer is the thickness at the location where the infrared light passes through the gas tube. In this technical solution, the gas tube adopts a square tube with a cross-sectional side length of 1 cm, that is, in this technical solution, the thickness b of the absorption layer is 1 cm.
吸光度A是指光线通过溶液或物质前的入射光强度与光线通过溶液或某一物质后的透射光强度的比值的以10为底的对数，即A＝lg(I0/I1)＝abc，其中I0为入射光强，I1为透射光强。a为摩尔吸光系数，摩尔吸光系数a与吸收物质的性质及入射光的波长λ有关，在入射光的波长λ确定后，同一物质的摩尔吸光系数a不变。Absorbance A refers to the logarithm of the base 10 of the ratio of the incident light intensity before the light passes through the solution or substance to the transmitted light intensity after the light passes through the solution or a substance, that is, A=lg(I0/I1)=abc, where I0 is the incident light intensity and I1 is the transmitted light intensity. a is the molar absorption coefficient, which is related to the properties of the absorbing substance and the wavelength λ of the incident light. After the wavelength λ of the incident light is determined, the molar absorption coefficient a of the same substance does not change.
基于上述技术方案，红外光源11自身发射出的入射光强I0已知，通过光电倍增管检测器17检测出被气体管吸收后的透射光强I1，依据A＝lg(I0/I1)可以计算出本气体管内气体的吸光度A。同时，吸收层厚度b已知(气体管厚度已知1cm)，摩尔吸光系数依据其物理意义可计算得出，摩尔吸光系数的物理意义是：浓度为1mol·L-1的物质，在厚度为1cm的吸收池中，在一定波长下测得的吸光度。依据A＝lg(I0/I1)＝abc，可计算出需要测量的气体的浓度c。Based on the above technical solution, the incident light intensity I0 emitted by the infrared light source 11 itself is known, and the transmitted light intensity I1 absorbed by the gas tube is detected by the photomultiplier tube detector 17, which can be calculated according to A=lg(I0/I1) The absorbance A of the gas in the gas pipe is obtained. At the same time, the thickness b of the absorption layer is known (the thickness of the gas tube is known as1cm ), and the molar absorption coefficient can be calculated according to its physical meaning. Absorbance measured at a certain wavelength in a 1cm absorption cell. According to A=lg(I0/I1)=abc, the concentration c of the gas to be measured can be calculated.
如图2所示，本发明技术方案中，测量光路包括第一测量光路和第二测量光路，气体管包括分别设置在第一测量光路和第二测量光路中的第一气体管10和第二气体管20，第一气体管10和第二气体管20参数相同。所谓参数相同主要是指第一气体管10和第二气体管20的材料、尺寸和制造工艺相同，为了确保第一气体管10和第二气体管20的参数相同，一般的选用同一批次生产的横截面为1cm的正方形的长方体状透明石英管。As shown in FIG. 2 , in the technical solution of the present invention, the measurement optical path includes a first measurement optical path and a second measurement optical path, and the gas pipe includes a first gas pipe 10 and a second measurement optical path respectively arranged in the first measurement optical path and the second measurement optical path. The parameters of the
红外光源11后部依次设置有单色器12、斩波器13和第一半透半反镜14。第一半透半反镜14的透光路为第一测量光路，第一半透半反镜14的反光路为第二测量光路。A
第一测量光路中，第一气体管10设置在第一半透半反镜14的透光路上，第一气体管10后部设置有第一平面镜15，第一平面镜15的反光路上设置有第二半透半反镜16。光电倍增管检测器17设置在第二半透半反镜16的反光路上，第二半透半反镜16将第一平面镜15的反射光反射至光电倍增管检测器17上。In the first measurement optical path, the first gas pipe 10 is arranged on the light transmission path of the first half mirror 14, the rear of the first gas pipe 10 is provided with a first plane mirror 15, and the reflection path of the first plane mirror 15 is provided with a second plane mirror 15. Two semi-transparent mirrors 16 . The photomultiplier tube detector 17 is disposed on the light reflection path of the
第二测量光路中，第一半透半反镜14的反射光路上设置有第二平面镜19，第二气体管20设置在第二平面镜19的反射光路上。第二半透半反镜16同时位于第二气体管20的透光路上。第二半透半反镜16透过第二气体管20的透射光至光电倍增管检测器17。In the second measurement optical path, a
上述技术方案中，第一测量光路和第二测量光路的设置，一个作为参比测量光路，一个作为实际测量光路，分别进行测量工作。通过参比测量光路的设置，增加测量次数和测量对比数据，用以消除其它物质吸光度，在浓度测量中，获得一个消光校正参数K，用以消除浓度测量中杂质气体的吸光度，使得测量更加精确和准确。In the above technical solution, the first measurement optical path and the second measurement optical path are set, one is used as the reference measurement optical path, and the other is used as the actual measurement optical path, and the measurement work is performed respectively. Through the setting of the reference measurement optical path, the number of measurements and the measurement comparison data are increased to eliminate the absorbance of other substances. In the concentration measurement, an extinction correction parameter K is obtained to eliminate the absorbance of the impurity gas in the concentration measurement, making the measurement more accurate. and accurate.
如图2所示，本技术方案中，第一测量光路和第二测量光路中分别设置有第一遮光罩19和第二遮光罩21，第一遮光罩19和第二遮光罩21分别设置在第一气体管10和第二气体管20前部。第一遮光罩19和第二遮光罩21的设置，在第一测量光路或第二测量光路检测中，关闭另一测量光路中的遮光罩，避免另一测量光路上的光进入光电倍增管检测器17，影响测量效果。As shown in FIG. 2 , in this technical solution, a first light-shielding
本技术方案中，保护气罐1的出气口与含铬粉罐2的进气口之间设置有载气流量计F1，载气流量计F1用于获得经过载气气路D的氩气的流量，确保经过本处的氩气流量恒定(确保保护气罐1内氩气量足够时，通过载气流量计F1氩气流量恒定)，在本处氩气流量恒定时，若载气量变化，则表示由含铬粉罐2升华排出的Cr(CO)6气体流量改变。调节气流量计F2用于观察调节气流量，通过设置在调节气流量计F2前方的调节阀Z4控制调节气的流量，并由调节气流量计F2观察其流量大小，避免调节过量。In this technical solution, a carrier gas flow meter F1 is arranged between the gas outlet of the protective gas tank 1 and the air inlet of the chromium-containing powder tank 2, and the carrier gas flow meter F1 is used to obtain the argon gas passing through the carrier gas gas path D. Make sure that the argon flow through this place is constant (ensure that the argon flow in the protective gas tank 1 is sufficient, the argon flow through the carrier gas flow meter F1 is constant). When the argon flow is constant here, if the carrier gas volume changes, then Indicates the change in the flow rate of the Cr(CO)6 gas discharged from the sublimation of the chromium-containing powder tank 2. The regulating gas flowmeter F2 is used to observe the regulating gas flow. The regulating gas flow is controlled by the regulating valve Z4 set in front of the regulating gas flowmeter F2, and the flow rate is observed by the regulating gas flowmeter F2 to avoid excessive regulation.
测量阀Z3的出气口上连接有第一闸阀和第二闸阀，第一闸阀和第二闸阀分别与第一气体管10和第二气体管20的进气口连接，在第一气体管10和第二气体管20分别工作时，第一闸阀和第二闸阀分别工作，避免第一气体管10或第二气体管20工作时，气体进入另一气体管，影响气体浓度测量精准度。A first gate valve and a second gate valve are connected to the gas outlet of the measuring valve Z3, and the first gate valve and the second gate valve are respectively connected with the air inlets of the first gas pipe 10 and the
基于上述技术方案，本发明技术方案的一种掩膜版镀膜LCVD载气浓度调节与测量设备，在气体浓度测量时，测量过程如下表1所示：Based on the above technical solution, a mask plate coating LCVD carrier gas concentration adjustment and measurement device of the technical solution of the present invention, when the gas concentration is measured, the measurement process is shown in Table 1 below:
表1：Table 1:
上表1中：In Table 1 above:
Iag值为无红外光、无气体条件下，测量侧因密封不够获得的透射光强度值；The Iag value is the transmitted light intensity value obtained due to insufficient sealing on the measurement side under the condition of no infrared light and no gas;
Ibg值为无红外光、无气体条件下，参比侧因密封不够获得的透射光强度值；The Ibg value is the transmitted light intensity value obtained from the reference side due to insufficient sealing under the condition of no infrared light and no gas;
Iao值为有红外光、无气体条件下，测量侧的透射光强度值；The Iao value is the transmitted light intensity value of the measurement side under the condition of infrared light and no gas;
Ibo值为有红外光、无气体条件下，参比侧的透射光强度值；The Ibo value is the transmitted light intensity value of the reference side under the condition of infrared light and no gas;
Ia值为有红外光、有工作气条件下，测量侧的透射光强度值；The Ia value is the transmitted light intensity value of the measurement side under the condition of infrared light and working gas;
Ib值为有红外光、有调节气条件下，参比侧的透射光强度值。The Ib value is the transmitted light intensity value of the reference side under the condition of infrared light and conditioning gas.
为了便于进一步理解，下面对表1中第一组至第六组中的操作方法做具体的说明：In order to facilitate further understanding, the operation methods in the first group to the sixth group in Table 1 are described in detail below:
第一组：关闭红外光源11，罩上第二遮光罩21，关闭第二气体管20前端的第二闸阀，关闭镀膜阀Z1、节流阀Z2和测量阀Z3，关闭第一遮光罩19，关闭第一气体管10端的第一闸阀；使得保护气罐1中的氩气不进入第一气体管10，然后在光电倍增管检测器17处获得Iag。Iag值为无红外光照射条件下，第一气体管10的透射光强度值，这里透过的光为因设备密封密闭不够而透过的自然光。The first group: close the infrared light source 11, cover the second
第二组：关闭红外光源11，罩上第一遮光罩19，关闭第一气体管10前端的第一闸阀，关闭镀膜阀Z1、节流阀Z2和测量阀Z3，关闭第二遮光罩21，关闭第二气体管20端的第二闸阀；使得保护气罐1中的氩气不进入第二气体管20，然后在光电倍增管检测器17处获得Ibg。Ibg值为无红外光照射条件下，第二气体管20的透射光强度值，这里透过的光为因设备密封密闭不够而透过的自然光。The second group: close the infrared light source 11, cover the
第三组：打开红外光源11，罩上第二遮光罩21，关闭第二气体管20前端的第二闸阀，关闭镀膜阀Z1、节流阀Z2和测量阀Z3，关闭第一遮光罩19，关闭第一气体管10端的第一闸阀；使得保护气罐1中的氩气不进入第一气体管10，然后在光电倍增管检测器17处获得Iao。Iao值为有红外光照射条件下，第一气体管10的透射光强度值。The third group: turn on the infrared light source 11, cover the second
第四组：打开红外光源11，罩上第一遮光罩19，关闭第一气体管10前端的第一闸阀，关闭镀膜阀Z1、节流阀Z2和测量阀Z3，关闭第二遮光罩21，关闭第二气体管20端的第二闸阀；使得保护气罐1中的氩气不进入第二气体管20，然后在光电倍增管检测器17处获得Ibo。Ibo值为有红外光照射条件下，第二气体管20的透射光强度值。The fourth group: turn on the infrared light source 11, cover the
第五组，打开红外光源11，罩上第二遮光罩21，关闭第二气体管20前端的第二闸阀，关闭镀膜阀Z1，打开节流阀Z2。打开测量阀Z3，打开第一遮光罩19，打开第一气体管10端的第一闸阀；使得调节气路C中的调剂气氩气与载气气路D中的载气混合,即工作气，经过测量阀Z3，最后进入第一气体管10内，吸收红外光源11发射出的红外光，在然后在光电倍增管检测器17处获得Ia，Ia值为工作气(调节气路和载气气路的混合气)的透射光强度值。The fifth group: turn on the infrared light source 11, cover the second
第六组，打开红外光源11，罩上第一遮光罩19，关闭第一气体管10前端的第一闸阀，关闭镀膜阀Z1和节流阀Z2。打开测量阀Z3，打开第二遮光罩21，打开第二气体管20端的第二闸阀；使得调节气路C中的调节气氩气经过测量阀Z3，最后进入第二气体管20内，吸收红外光源11发射出的红外光，在然后在光电倍增管检测器17处获得Ib，Ib值为调节气的透射光强度值。The sixth group: turn on the infrared light source 11, cover the
依据上述第一组至第六组获得的透射光强度值数据，并依据以下公式进行计算：According to the transmitted light intensity value data obtained from the first group to the sixth group above, the calculation is performed according to the following formula:
消光校正参数：K＝(Ibo-Ibg)/(Iao-Iag)；Extinction correction parameter: K=(Ibo-Ibg)/(Iao-Iag);
A＝-Lg{[(Ia-Iag)/(Ib-Ibg)]*K}＝abc；A=-Lg{[(Ia-Iag)/(Ib-Ibg)]*K}=abc;
其中A为吸光度，a为氩气或工作气(调节气路和载气气路的混合气)的摩尔吸光系数，b为气路的厚度(第一气体管10和第二气体管20直径，1cm)，c为载气浓度值。Wherein A is the absorbance, a is the molar absorption coefficient of argon or working gas (the mixture of the adjustment gas path and the carrier gas path), b is the thickness of the gas path (the diameter of the first gas pipe 10 and the
则根据上述公式，即可计算出工作气中Cr(CO)6气体浓度。实际是载气气路D中的载气(保护气氩气和Cr(CO)6气体的混合气)浓度，因保护气流量固定不便，则测出的载气浓度含量高低和改变即为Cr(CO)6气体浓度变化情况。Then according to the above formula, the Cr(CO)6 gas concentration in the working gas can be calculated. It is actually the concentration of the carrier gas (the mixture of shielding gas argon and Cr(CO)6 gas) in the carrier gas path D. Because the flow rate of the shielding gas is inconvenient to be fixed, the measured carrier gas concentration and change are Cr (CO)6 gas concentration changes.
本技术方案中，气体浓度检测和工作，是间隔交错进行的，在一次检测后，判断出工作气中的Cr(CO)6气体浓度，实现对调节气路中氩气流量的调节作出指示，确保工作其中Cr(CO)6气体浓度适应掩膜版薄膜的形成。In this technical solution, the gas concentration detection and operation are carried out in a staggered manner. After one detection, the Cr(CO)6 gas concentration in the working gas is determined, so as to realize the adjustment of the argon gas flow in the adjustment gas circuit. Make sure to work where the Cr(CO)6 gas concentration is adapted to the formation of the reticle film.
本发明技术方案在上面结合附图对发明进行了示例性描述，显然本发明具体实现并不受上述方式的限制，只要采用了本发明的方法构思和技术方案进行的各种非实质性改进，或未经改进将发明的构思和技术方案直接应用于其它场合的，均在本发明的保护范围之内。The technical solution of the present invention has been exemplarily described above in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above-mentioned manner, as long as various non-substantial improvements made by the method concept and technical solution of the present invention are adopted, Or directly applying the inventive concept and technical solution to other occasions without improvement is within the protection scope of the present invention.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en)* | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| JP2008218760A (en)* | 2007-03-06 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| CN201837582U (en)* | 2010-10-19 | 2011-05-18 | 天津天狮生物发展有限公司 | Integrated optical ozone yield detection device |
| CN203396692U (en)* | 2013-07-03 | 2014-01-15 | 戴景民 | Infrared detection device for methane concentration |
| CN208313820U (en)* | 2018-06-04 | 2019-01-01 | 贵州电网有限责任公司 | A kind of infrared gas detection device based on double gas chambers |
| CN111394789A (en)* | 2020-04-16 | 2020-07-10 | 北京北方华创微电子装备有限公司 | Gas inlet structure, gas inlet method and gas inlet equipment of chemical vapor deposition equipment |
| CN113092378A (en)* | 2021-04-16 | 2021-07-09 | 中国科学院长春光学精密机械与物理研究所 | Laser gas detection device |
- 2022
- 2022-07-14CNCN202210826251.XApatent/CN115165787A/enactivePending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en)* | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| JP2008218760A (en)* | 2007-03-06 | 2008-09-18 | Matsushita Electric Ind Co Ltd | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| CN201837582U (en)* | 2010-10-19 | 2011-05-18 | 天津天狮生物发展有限公司 | Integrated optical ozone yield detection device |
| CN203396692U (en)* | 2013-07-03 | 2014-01-15 | 戴景民 | Infrared detection device for methane concentration |
| CN208313820U (en)* | 2018-06-04 | 2019-01-01 | 贵州电网有限责任公司 | A kind of infrared gas detection device based on double gas chambers |
| CN111394789A (en)* | 2020-04-16 | 2020-07-10 | 北京北方华创微电子装备有限公司 | Gas inlet structure, gas inlet method and gas inlet equipment of chemical vapor deposition equipment |
| CN113092378A (en)* | 2021-04-16 | 2021-07-09 | 中国科学院长春光学精密机械与物理研究所 | Laser gas detection device |
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