CN115148230A - Bad block screening method, device, equipment and storage medium - Google Patents
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Abstract
Description
Translated fromChinese技术领域technical field
本发明涉及固态硬盘技术领域，尤其涉及一种坏块筛选方法、装置、设备和存储介质。The present invention relates to the technical field of solid-state hard disks, and in particular, to a bad block screening method, apparatus, device and storage medium.
背景技术Background technique
存储设备作为数据存储的媒介，是计算机系统的重要组成部分。在大数据时代，对存储设备的容量、读写速度、可靠性等提出了越来越高的要求。由于SSD(Solid StateDrives，固态硬盘)具有读写速度快、容量大、抗震防摔、体积小等优势，因此SSD正在成为主流存储设备。NAND(一种闪存芯片材料)闪存是SSD实际的物理存储媒介。NAND闪存的质量直接关乎SSD的性能。As a medium for data storage, storage devices are an important part of computer systems. In the era of big data, higher and higher requirements are placed on the capacity, read and write speed, and reliability of storage devices. As SSD (Solid State Drives, solid state drive) has the advantages of fast read and write speed, large capacity, shock resistance, drop resistance, and small size, SSD is becoming a mainstream storage device. NAND (a flash chip material) flash memory is the actual physical storage medium for SSDs. The quality of the NAND flash is directly related to the performance of the SSD.
当前，在SSD组装完成之后，对SSD中的NAND闪存的坏块情况进行识别。通过SSD固件筛选出存储问题的NAND闪存，然后上报给系统，通知人员更换SSD中的NAND闪存。比如在固态硬盘的最高工作温度下对固态硬盘进行写数据和读数据操作，并统计读数据的错误比特翻转数，最后根据错误比特翻转数筛选出坏块；然而，仅依靠读数据的错误比特翻转数来判断好块与坏块的方法，容易出现容量偏高，但产品不稳定，存在隐患；又或者存储设备虽然稳定，但存储容量又较低的现象，即误判的块比较多，导致资源浪费等。Currently, after the assembly of the SSD is completed, the bad block condition of the NAND flash memory in the SSD is identified. The NAND flash memory with storage problems is screened out through the SSD firmware, and then reported to the system to notify personnel to replace the NAND flash memory in the SSD. For example, write data and read data to the SSD at the highest working temperature of the SSD, count the number of error bit flips of the read data, and finally filter out bad blocks according to the number of error bit flips; however, only relying on the error bits of the read data The method of judging good blocks and bad blocks by the number of flips is prone to high capacity, but the product is unstable and there are hidden dangers; or the storage device is stable, but the storage capacity is low, that is, there are many misjudged blocks. lead to waste of resources, etc.
综上所述，如何提高固态硬盘的坏块筛选准确率是目前本领域技术人员亟需解决的问题。To sum up, how to improve the bad block screening accuracy of the solid-state hard disk is an urgent problem to be solved by those skilled in the art at present.
发明内容SUMMARY OF THE INVENTION
第一方面，本发明提供一种坏块筛选方法，包括：In a first aspect, the present invention provides a bad block screening method, comprising:
获取当前记录的存储设备中各个数据块的ECC错误比特数以及读取重试次数；Obtain the number of ECC error bits and the number of read retries of each data block in the currently recorded storage device;
根据每个所述数据块中的ECC错误比特数和读取重试次数，筛选出所述存储设备中的坏块。According to the number of ECC error bits and the number of read retries in each of the data blocks, the bad blocks in the storage device are screened out.
在可选的实施方式中，所述根据每个所述数据块中的ECC错误比特数和读取重试次数，筛选出所述存储设备中的坏块包括：In an optional implementation manner, the filtering out the bad blocks in the storage device according to the number of ECC error bits and the number of read retries in each of the data blocks includes:
当所述ECC错误比特数在预设的第一比特数阈值与第二比特数阈值之间，且所述读取重试次数大于预设的重试次数阈值时，确定对应的数据块为坏块；其中，所述第一比特数阈值小于所述第二比特数阈值。When the number of ECC error bits is between the preset first bit number threshold and the second bit number threshold, and the number of read retries is greater than the preset number of retries threshold, it is determined that the corresponding data block is bad block; wherein the first bit number threshold is smaller than the second bit number threshold.
在可选的实施方式中，还包括：In optional embodiments, it also includes:
当所述ECC错误比特数大于所述第二比特数阈值，确定对应的数据块为坏块。When the ECC error bit number is greater than the second bit number threshold, it is determined that the corresponding data block is a bad block.
在可选的实施方式中，还包括：In optional embodiments, it also includes:
当所述读取重试次数大于预设的重试次数阈值时，确定对应的数据块为坏块。When the number of read retries is greater than a preset threshold for the number of retries, it is determined that the corresponding data block is a bad block.
在可选的实施方式中，所述第一比特数阈值为所述第二比特数阈值的40％-60％。In an optional implementation manner, the first bit number threshold is 40%-60% of the second bit number threshold.
第二方面，本发明提供一种坏块筛选装置，包括：In a second aspect, the present invention provides a bad block screening device, comprising:
获取模块，用于获取当前记录的存储设备中各个数据块的ECC错误比特数以及读取重试次数；an acquisition module, used to acquire the number of ECC error bits and the number of read retries of each data block in the currently recorded storage device;
筛选模块，用于根据每个所述数据块中的ECC错误比特数和读取重试次数，筛选出所述存储设备中的坏块。A screening module, configured to screen out bad blocks in the storage device according to the number of ECC error bits and the number of read retries in each of the data blocks.
在可选的实施方式中，所述筛选模块用于：In an optional embodiment, the screening module is used to:
当所述ECC错误比特数在预设的第一比特数阈值与第二比特数阈值之间，且所述读取重试次数大于预设的重试次数阈值时，确定对应的数据块为坏块；其中，所述第一比特数阈值小于所述第二比特数阈值。When the number of ECC error bits is between the preset first bit number threshold and the second bit number threshold, and the number of read retries is greater than the preset number of retries threshold, it is determined that the corresponding data block is bad block; wherein the first bit number threshold is smaller than the second bit number threshold.
第三方面，本发明提供一种存储设备，所述存储设备采用前述任一项所述的坏块筛选方法进行坏块筛选。In a third aspect, the present invention provides a storage device that uses the bad block screening method described in any one of the foregoing to perform bad block screening.
第四方面，本发明提供一种计算机设备，所述计算机设备包括存储器和至少一个处理器，所述存储器存储有计算机程序，所述处理器用于执行所述计算机程序以实施所述的坏块筛选方法。In a fourth aspect, the present invention provides a computer device comprising a memory and at least one processor, the memory stores a computer program, and the processor is configured to execute the computer program to implement the bad block screening method.
第五方面，本发明提供一种计算机存储介质，其存储有计算机程序，所述计算机程序被执行时，实施根据所述的坏块筛选方法。In a fifth aspect, the present invention provides a computer storage medium, which stores a computer program, and when the computer program is executed, implements the bad block screening method according to the above.
本发明实施例具有如下有益效果：The embodiment of the present invention has the following beneficial effects:
本发明实施例提供了一种坏块筛选方法，包括获取当前记录的存储设备中各个数据块的ECC错误比特数以及读取重试次数；根据每个数据块中的ECC错误比特数和/或读取重试次数，筛选出存储设备中的坏块。本发明实施例将当前记录的数据块的ECC错误比特数和读取重试次数综合作为筛选标准，以此筛选出存储设备中的坏块，从而能够更准确地筛选坏块，避免了坏块遗漏，提高了坏块筛选的准确度；而后，可对所筛选出的坏块进行相应处理，以此提高存储设备的稳定性，避免出现存储设备容量偏高但不稳定或存储设备稳定但存储容量较低的情况，从而保证了存储设备的存储容量与存储设备稳定性的平衡。An embodiment of the present invention provides a bad block screening method, including obtaining the number of ECC error bits and the number of read retries of each data block in a currently recorded storage device; according to the number of ECC error bits in each data block and/or The number of read retries to filter out bad blocks in the storage device. In the embodiment of the present invention, the number of ECC error bits and the number of read retries of the currently recorded data block are integrated as the screening criteria, so as to screen out the bad blocks in the storage device, so that the bad blocks can be screened more accurately and the bad blocks can be avoided. The omission improves the accuracy of bad block screening; then, the screened out bad blocks can be processed accordingly, so as to improve the stability of the storage device and avoid the occurrence of high-capacity but unstable storage devices or stable but stable storage devices. In the case of low capacity, the balance between the storage capacity of the storage device and the stability of the storage device is ensured.
附图说明Description of drawings
为了更清楚地说明本发明的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对本发明保护范围的限定。在各个附图中，类似的构成部分采用类似的编号。In order to illustrate the technical solutions of the present invention more clearly, the accompanying drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be It is regarded as a limitation on the protection scope of the present invention. In the various figures, similar components are numbered similarly.
图1示出了本发明实施例中坏块筛选方法的第一个实施方式示意图；FIG. 1 shows a schematic diagram of a first implementation manner of a bad block screening method in an embodiment of the present invention;
图2示出了本发明实施例中坏块筛选方法的第二个实施方式示意图；FIG. 2 shows a schematic diagram of a second implementation manner of the bad block screening method in the embodiment of the present invention;
图3示出了本发明实施例中坏块筛选方法的第三个实施方式示意图；FIG. 3 shows a schematic diagram of a third implementation manner of the bad block screening method in the embodiment of the present invention;
图4示出了本发明实施例中坏块筛选方法的第四个实施方式示意图；FIG. 4 shows a schematic diagram of a fourth implementation manner of the bad block screening method in the embodiment of the present invention;
图5示出了本发明实施例中坏块筛选装置的结构示意图。FIG. 5 shows a schematic structural diagram of a bad block screening apparatus in an embodiment of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments.
通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present invention.
在下文中，可在本发明的各种实施例中使用的术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。Hereinafter, the terms "comprising", "having" and their cognates, which may be used in various embodiments of the present invention, are only intended to denote particular features, numbers, steps, operations, elements, components, or combinations of the foregoing, and should not be construed as first excluding the presence of or adding one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing or the possibility of a combination of the foregoing.
此外，术语“第一”、“第二”、“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。Furthermore, the terms "first", "second", "third", etc. are only used to differentiate the description and should not be construed as indicating or implying relative importance.
除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本发明的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本发明的各种实施例中被清楚地限定。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of this invention belong. The terms (such as those defined in commonly used dictionaries) will be interpreted as having the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized or overly formal meaning, unless explicitly defined in the various embodiments of the present invention.
由于存储设备(如NAND Flash)的工艺不能保证NAND闪存的Memory Array在其生命周期中保持性能的可靠，因此，在NAND闪存的生产中及使用过程中会产生坏块。坏块的特性是：当编程/擦除这个块时，会造成Page Program和Block Erase操作时的错误，相应地反映到Status Register的相应位。Since the technology of the storage device (such as NAND Flash) cannot guarantee the reliability of the performance of the Memory Array of the NAND flash memory during its life cycle, bad blocks will occur during the production and use of the NAND flash memory. The characteristics of the bad block are: when programming/erasing this block, it will cause errors in the operation of Page Program and Block Erase, which will be reflected to the corresponding bits of the Status Register accordingly.
而目前固态硬盘((Solid State Disk，SSD))或U盘等需要在极端环境下进行读写测试，然后才能区分出NAND闪存中的好块与坏块。问题在于高温写低温读，这种极端环境下测试会导致很多块出现误判，因为工作时是不会出现这样的环境，但是不这样做又会导致部分不太稳定的块无法识别出来，这样就出现两个问题，不做极端测试会导致SSD在筛选时，会导致SSD容量偏高，但是产品不稳定，存在隐患；做极端测试会导致SSD在筛选时，虽然稳定，但是容量又较低的现象，存在误判的情况比较多。并且，随着flash存储器的工艺发展，flash存储器的不稳定会成为一种常态。基于此，本实施例提出一种坏块筛选方法，以解决上述的技术问题。At present, solid state drives (Solid State Disk, SSD) or U disks need to perform read and write tests in extreme environments before distinguishing between good blocks and bad blocks in NAND flash memory. The problem lies in high temperature writing and low temperature reading. Testing in this extreme environment will lead to misjudgment of many blocks, because such an environment will not occur during work, but not doing so will cause some unstable blocks to be unrecognized, so There are two problems. Failure to do extreme testing will lead to high SSD capacity during screening, but the product is unstable and there are hidden dangers; doing extreme testing will cause SSDs to be stable during screening, but their capacity is low. phenomenon, there are many cases of misjudgment. Moreover, with the technological development of the flash memory, the instability of the flash memory will become the norm. Based on this, this embodiment proposes a bad block screening method to solve the above-mentioned technical problems.
实施例1Example 1
请参照图1，本实施例提供了一种坏块筛选方法，下面对该坏块筛选方法进行详细说明。Referring to FIG. 1 , this embodiment provides a bad block screening method, and the bad block screening method is described in detail below.
S10，获取当前记录的存储设备中各个数据块的ECC错误比特数以及读取重试次数。S10: Acquire the number of ECC error bits and the number of read retries of each data block in the currently recorded storage device.
S20，根据每个数据块中的ECC错误比特数和读取重试次数，筛选出存储设备中的坏块。S20, according to the number of ECC error bits and the number of read retries in each data block, filter out bad blocks in the storage device.
在对固态硬盘进行极端环境下的读写测试时，主控芯片记录存储设备中各个数据块的ECC返回值和读取重试次数，其中，ECC是指内存纠错校验，ECC返回值为校验后返回的ECC错误比特数。在对存储设备进行内存纠错校验时，ECC硬件模块会记录指定长度的数据中错了多少位(bit)，也即是返回一个ECC错误比特数；而读取重试次数(read retry次数)是指所记录的发送重试指令以调节电压Vt(即flash预判电压)的次数，其中，在flash原厂对于读取重试次数是有推荐的，针对每一款flash，其读取重试次数是一个确定值。When performing read and write tests on SSDs in extreme environments, the main control chip records the ECC return value and read retries of each data block in the storage device, where ECC refers to memory error correction check, and the ECC return value is The number of ECC error bits returned after verification. When performing memory error correction check on the storage device, the ECC hardware module will record how many bits are wrong in the data of the specified length, that is, return an ECC error bit number; ) refers to the recorded times of sending retry commands to adjust the voltage Vt (ie, the flash pre-judgment voltage). Among them, the original flash factory recommends the number of read retries. For each type of flash, its read The number of retries is a definite value.
根据每个数据块对应的ECC错误比特数和读取重试次数，从而筛选出存储设备中的坏块。According to the number of ECC error bits corresponding to each data block and the number of read retries, the bad blocks in the storage device are screened out.
在本实施例中，通过综合考虑每个数据块对应的ECC错误比特数和读取重试次数可以确定存储设备块中的坏块。In this embodiment, the bad block in the block of the storage device can be determined by comprehensively considering the number of ECC error bits corresponding to each data block and the number of read retries.
其中，当ECC错误比特数处于预设的第一区间内，则确定对应的数据块为好块；当ECC错误比特数处于预设的第二区间内，则再结合读取重试次数来筛选坏块，此时，若读取重试次数小于预设的重试次数阈值，则确定对应的数据块为好块，反之，则为坏块；当ECC错误比特数处于第三区间时，则可直接确定对应的数据块为坏块。Wherein, when the number of ECC error bits is within the preset first interval, the corresponding data block is determined to be a good block; when the number of ECC error bits is within the preset second interval, then the number of read retries is combined to filter Bad block, at this time, if the number of read retries is less than the preset number of retries threshold, the corresponding data block is determined to be a good block, otherwise, it is a bad block; when the number of ECC error bits is in the third interval, then It can be directly determined that the corresponding data block is a bad block.
可以理解，上述的第一区间通常对应于允许的正常出错率范围；第二区间所对应的出错率会高于第一区间，但还没有达到极限值；而第三区间则是指超过了所允许的最大出错范围，说明该块是极不稳定的。当然，这里仅是以三个区间来进行示例说明，若想要更精细地筛选，还可以划分出更多的区间，这里不作限定。It can be understood that the above-mentioned first interval usually corresponds to the allowable normal error rate range; the error rate corresponding to the second interval will be higher than the first interval, but has not reached the limit value; and the third interval refers to exceeding the limit value. The maximum error range allowed, indicating that the block is extremely unstable. Of course, only three intervals are used for illustration here. If you want to filter more finely, you can divide more intervals, which is not limited here.
具体地，如图2所示，当通过ECC错误比特数和读取重试次数来筛选存储设备中的坏块时，具体包括如下步骤：Specifically, as shown in FIG. 2, when the bad blocks in the storage device are screened by the number of ECC error bits and the number of read retries, the following steps are specifically included:
S21，判断ECC错误比特数是否处于预设的第一比特数阈值和第二比特数阈值之间。S21. Determine whether the number of ECC error bits is between a preset first threshold of number of bits and a second threshold of number of bits.
S22，若ECC错误比特数不处于第一比特数阈值与第二比特数阈值之间，且ECC错误比特数小于第一比特数阈值，则确定对应的数据块为好块，反之则为坏块。S22, if the number of ECC error bits is not between the first bit number threshold and the second bit number threshold, and the ECC error bit number is less than the first bit number threshold, then determine that the corresponding data block is a good block, otherwise it is a bad block .
S23，若ECC错误比特数处于第一比特数阈值与第二比特数阈值之间，判断读取重试次数是否大于预设的重试次数阈值。S23, if the number of ECC error bits is between the first threshold of number of bits and the second threshold of number of bits, determine whether the number of read retries is greater than the preset number of retries threshold.
S24，若读取重试次数小于等于重试次数阈值，则确定对应的数据块为好块。S24, if the number of read retries is less than or equal to the threshold of the number of retries, determine that the corresponding data block is a good block.
S25，若读取重试次数大于重试次数阈值，则确定对应的数据块为坏块。S25, if the number of read retries is greater than the threshold of the number of retries, determine that the corresponding data block is a bad block.
具体地，若当前记录的ECC错误比特数小于第一比特数阈值，也即是，ECC错误比特数处于零和第一比特数阈值作为临界值所组成的第一区间内，则确定对应的数据块为好块。Specifically, if the number of ECC error bits currently recorded is less than the first bit number threshold, that is, the ECC error bit number is within the first interval composed of zero and the first bit number threshold as the critical value, then determine the corresponding data Blocks are good blocks.
若当前记录的ECC错误比特数处于第一比特数阈值和第二比特数阈值作为临界值所组成的第二区间内，即ECC错误比特数处于第一比特数阈值和第二比特数阈值之间，且读取重试次数小于等于重试次数阈值，则确定对应的数据块为好块。而当ECC错误比特数处于第一比特数阈值和第二比特数阈值之间，但读取重试次数大于重试次数阈值时，确定对应的数据块为坏块。If the number of ECC error bits currently recorded is within the second interval composed of the first threshold and the second threshold as critical values, that is, the number of ECC errors is between the first threshold and the second threshold , and the number of read retries is less than or equal to the threshold of the number of retries, the corresponding data block is determined to be a good block. On the other hand, when the number of ECC error bits is between the first bit number threshold and the second bit number threshold, but the number of read retries is greater than the number of retries threshold, it is determined that the corresponding data block is a bad block.
若当前记录的ECC错误比特数大于第二比特数阈值，也即是，ECC错误比特数处于第二比特数阈值和无穷大数作为临界值所组成的第三区间内，则确定对应的数据块为坏块。If the number of ECC error bits currently recorded is greater than the second bit number threshold, that is, the ECC error bit number is within the third interval composed of the second bit number threshold and an infinite number as the critical value, then the corresponding data block is determined as bad block.
其中，第一比特数阈值、第二比特数阈值和重试次数阈值可根据实际情况进行设置，在此不做限定。例如，设置第二比特数阈值为一般情况下存储设备数据块的ECC错位比特总数的80％-100％，设置第一比特数阈值为第二比特数阈值的40％-60％，假设设置第一比特数阈值为43，第二比特数阈值为72，重试次数阈值为18；当数据块的ECC错误比特数小于43时，则确定该数据块为好块；当数据块的ECC错误比特数处于(43，72)区间内，但其读取重试次数小于18时，则确定对应的数据块为好块，也即是，将一些ECC错误比特数较高但稳定性较好的数据块块作为好块。但是，当数据块的ECC错误比特数处于(43，72)区间内，但其读取重试次数大于18时，直接确定对应的数据块为坏块。The first bit number threshold, the second bit number threshold, and the number of retry thresholds may be set according to actual conditions, which are not limited herein. For example, set the second bit number threshold to 80%-100% of the total number of ECC misaligned bits in the data block of the storage device in general, and set the first bit number threshold to 40%-60% of the second bit number threshold. The first bit threshold is 43, the second bit threshold is 72, and the number of retry thresholds is 18; when the number of ECC error bits of the data block is less than 43, the data block is determined to be a good block; when the ECC error bits of the data block are The number is in the (43, 72) interval, but when the number of read retries is less than 18, the corresponding data block is determined to be a good block, that is, some data with higher ECC error bits but better stability Block blocks as good blocks. However, when the number of ECC error bits of the data block is in the interval (43, 72), but the number of read retries is greater than 18, it is directly determined that the corresponding data block is a bad block.
上述通过ECC错误比特数和读取重试次数来综合判断存储设备块的坏块，将一些稳定但ECC错误比特数较高的数据块重新定义为好块，如ECC错误比特数处于(43，72)区间内，但其读取重试次数小于18的数据块，以此增加存储设备的容量，避免出现存储设备的现容量偏高但不稳定，又或者虽然存储设备稳定但容量又较低的现象。The above is to comprehensively judge the bad blocks of the storage device block by the number of ECC error bits and the number of read retries, and redefine some stable data blocks with high ECC error bits as good blocks. For example, the number of ECC error bits is (43, 72) within the interval, but the data blocks whose read retries are less than 18, so as to increase the capacity of the storage device and avoid the occurrence of the current capacity of the storage device is high but unstable, or the storage device is stable but the capacity is low The phenomenon.
可以理解，上述实施例重点在于通过ECC错误比特数和读取重试次数来筛选坏块，且先通过对ECC错误比特数进行判断，而后再结合读取重试次数来筛选。其中，对ECC错误比特数进行判断的过程包括：1.判断ECC错误比特数是否小于第一比特数阈值；2.判断ECC错误比特数是否处于第一比特数阈值和第二比特数阈值之间；3.判断ECC错误比特数是否大于第二比特数阈值。上述三个判断过程可依次先后进行或同时进行，其具体判断顺序在此不做限定。It can be understood that the above-mentioned embodiment focuses on screening bad blocks by the number of ECC error bits and the number of read retries, and firstly by judging the number of ECC error bits, and then combining with the number of read retries. Wherein, the process of judging the number of ECC error bits includes: 1. judging whether the number of ECC error bits is less than the first bit number threshold; 2. judging whether the number of ECC error bits is between the first bit number threshold and the second bit number threshold 3. Determine whether the ECC error bit number is greater than the second bit number threshold. The above three judging processes can be performed in sequence or simultaneously, and the specific judging sequence is not limited herein.
可选地，如图3所示，本实施例所包括的仅通过ECC错误比特数来筛选存储设备中的坏块的步骤还可以直接设置在读取到ECC错误比特数和读取重试次数的步骤之后，具体如下：Optionally, as shown in FIG. 3 , the step of screening bad blocks in the storage device only by the number of ECC error bits included in this embodiment can also be directly set in the number of ECC error bits read and the number of read retries. After the steps are as follows:
S31，判断当前记录的ECC错误比特数是否大于预设的第二比特阈值。S31: Determine whether the number of ECC error bits currently recorded is greater than a preset second bit threshold.
S32，若当前记录的ECC错误比特数大于第二比特数阈值，确定对应的数据块为坏块。S32, if the number of ECC error bits currently recorded is greater than the second bit number threshold, determine that the corresponding data block is a bad block.
若当前记录的ECC错误比特数大于第二比特数阈值，也即是，ECC错误比特数处于第二比特数阈值和无穷大数作为临界值所组成的第三区间内，则确定对应的数据块为坏块。具体地，将当前记录的ECC错误比特数与预设的第二比特数阈值进行比较，若当前记录的ECC错误比特数大于第二比特数阈值，确定对应的数据块为坏块，其中，第二比特数阈值可根据实际情况进行设置，在此不做限定。例如，假设当前记录的ECC错误比特总数为72，设置第二比特数阈值为73；由此，当数据块对应的ECC错误比特数大于72时，则确定该数据块为坏块。而当ECC错误比特数小于第二比特数阈值时，再根据ECC错误比特数和读取重试次数筛选出存储设备中的坏块。If the number of ECC error bits currently recorded is greater than the second bit number threshold, that is, the ECC error bit number is within the third interval composed of the second bit number threshold and an infinite number as the critical value, then the corresponding data block is determined as bad block. Specifically, the currently recorded number of ECC error bits is compared with a preset second threshold number of bits, and if the number of currently recorded ECC error bits is greater than the second threshold number of bits, it is determined that the corresponding data block is a bad block, wherein the first The two-bit threshold can be set according to the actual situation, which is not limited here. For example, assuming that the total number of ECC error bits currently recorded is 72, the second bit number threshold is set to 73; thus, when the number of ECC error bits corresponding to a data block is greater than 72, it is determined that the data block is a bad block. When the number of ECC error bits is less than the second bit number threshold, the bad blocks in the storage device are filtered out according to the number of ECC error bits and the number of read retries.
可选地，如图4所示，本实施例还包括仅通过读取重试次数来筛选存储设备中的坏块，其步骤可以直接设置在读取到ECC错误比特数和读取重试次数的步骤之后，具体如下：Optionally, as shown in FIG. 4 , this embodiment also includes screening bad blocks in the storage device only by the number of read retries, and the steps can be directly set in the number of ECC error bits read and the number of read retries. After the steps are as follows:
S41，判断当前记录的读取重试次数是否大于预设重试次数阈值。S41, judging whether the number of read retries currently recorded is greater than a preset number of retries threshold.
S42，若当前记录的读取重试次数大于重试次数阈值，确定对应的数据块为坏块。S42, if the currently recorded number of read retries is greater than the threshold of the number of retries, determine that the corresponding data block is a bad block.
具体地，将当前记录的读取重试次数与预设的重试次数阈值进行比较，若当前记录的读取重试次数大于重试次数阈值，确定对应的数据块为坏块，其中，重试次数阈值可根据实际情况进行设置，在此不做限定。Specifically, the currently recorded number of read retries is compared with the preset number of retry thresholds, and if the currently recorded number of read retries is greater than the number of retries threshold, it is determined that the corresponding data block is a bad block, wherein the retry The threshold of the number of trials can be set according to the actual situation, which is not limited here.
例如，设置重试次数阈值为一般情况下存储设备数据块的读取重试总次数的40％-60％，通常存储设备的数据块的读取重试次数在30以上，因此可将重试次数阈值设置为18次，当读取重试次数超过18次，不管ECC错误比特数为多少，都将其标记为坏块。也即是，假设一般情况下存储设备数据块的读取重试总次数为36，则设置重试次数阈值重试次数阈值为18；由此，当数据块对应的读取重试次数大于18时，则确定该数据块为坏块。For example, the threshold of the number of retries is set to be 40%-60% of the total number of read retries of the data blocks of the storage device in general, and the number of read retries of the data blocks of the storage device is usually more than 30, so the retry can be The number of times threshold is set to 18 times. When the number of read retries exceeds 18 times, regardless of the number of ECC error bits, it will be marked as a bad block. That is, assuming that the total number of read retries of the data block of the storage device is 36 in general, set the number of retries threshold and the threshold of the number of retries to 18; thus, when the number of read retries corresponding to the data block is greater than 18 , the data block is determined to be a bad block.
可以理解，本实施例在筛选坏块时，也可以先通过对读取重试次数进行判断，而后再结合ECC错误比特数来筛选坏块。其中，当读取重试次数小于等于重试次数阈值时，结合ECC错误比特数来进一步筛选坏块，当ECC错误比特数小于等于第二比特数阈值时，则确定对应的数据块为好块，反之则为坏块；而当读取重试次数大于重试次数阈值时，无论ECC错误比特数为多少，都确定对应的数据块为坏块。It can be understood that, when screening bad blocks in this embodiment, the number of read retries can also be judged first, and then the bad blocks can be screened in combination with the number of ECC error bits. Among them, when the number of read retries is less than or equal to the threshold of the number of retries, the bad blocks are further screened in combination with the number of ECC error bits, and when the number of ECC error bits is less than or equal to the second bit number threshold, it is determined that the corresponding data block is a good block , otherwise it is a bad block; and when the number of read retries is greater than the threshold of the number of retries, regardless of the number of ECC error bits, the corresponding data block is determined to be a bad block.
本实施例将当前记录的数据块的ECC错误比特数和读取重试次数综合作为筛选标准，也即是，对数据块的ECC错误比特数和读取重试次数进行综合考量，以此在极端环境测试过程中，筛选出存储设备中的坏块，从而能够更准确地筛选坏块，避免了坏块遗漏，提高了坏块筛选的准确度；而后，可通过对所筛选出的坏块进行处理，以此提高存储设备的稳定性，从而保证了存储设备的存储容量与存储设备稳定性的平衡。In this embodiment, the number of ECC error bits and the number of read retries of the currently recorded data block is comprehensively used as the screening criterion, that is, the number of ECC error bits and the number of read retries of the data block are comprehensively considered, so as to During the extreme environment test, the bad blocks in the storage device are screened out, so that the bad blocks can be screened more accurately, the omission of bad blocks is avoided, and the accuracy of bad block screening is improved; Processing is performed to improve the stability of the storage device, thereby ensuring the balance between the storage capacity of the storage device and the stability of the storage device.
实施例2Example 2
请参照图5，本发明实施例提供了一种坏块筛选装置，该装置包括：Referring to FIG. 5, an embodiment of the present invention provides a bad block screening device, the device includes:
获取模块51，用于获取当前记录的存储设备中各个数据块的ECC错误比特数以及读取重试次数；The
筛选模块52，用于根据每个所述数据块中的ECC错误比特数和读取重试次数，筛选出所述存储设备中的坏块。The
在一种可行的实施方式中，该筛选模块52用于：In a possible embodiment, the
当所述ECC错误比特数在预设的第一比特数阈值与第二比特数阈值之间，且所述读取重试次数大于预设的重试次数阈值时，确定对应的数据块为坏块；其中，所述第一比特数阈值小于所述第二比特数阈值。When the number of ECC error bits is between the preset first bit number threshold and the second bit number threshold, and the number of read retries is greater than the preset number of retries threshold, it is determined that the corresponding data block is bad block; wherein the first bit number threshold is smaller than the second bit number threshold.
上述的坏块筛选装置对应于实施例1的坏块筛选方法，实施例1中的任何可选项也适用于本实施例，这里不再详述。The above-mentioned bad block screening apparatus corresponds to the bad block screening method in Embodiment 1, and any optional items in Embodiment 1 are also applicable to this embodiment, which will not be described in detail here.
本发明实施例还提供了一种存储设备，该存储设备采用上述实施例的坏块筛选方法进行坏块筛选。An embodiment of the present invention further provides a storage device, which uses the bad block screening method of the above embodiment to perform bad block screening.
本发明实施例还提供了一种计算机设备，该计算机设备包括存储器和至少一个处理器，存储器存储有计算机程序，处理器用于执行计算机程序以实施上述实施例的坏块筛选方法。An embodiment of the present invention also provides a computer device, the computer device includes a memory and at least one processor, the memory stores a computer program, and the processor is configured to execute the computer program to implement the bad block screening method of the above embodiment.
存储器可包括存储程序区和存储数据区，其中，存储程序区可存储操作系统、至少一个功能所需的应用程序；存储数据区可存储根据计算机设备的使用所创建的数据(比如读取重试次数和ECC错误比特数等)等。此外，存储器可以包括高速随机存取存储器，还可以包括非易失性存储器，例如至少一个磁盘存储器件、闪存器件、或其他易失性固态存储器件。The memory may include a stored program area and a stored data area, wherein the stored program area may store an operating system, an application program required for at least one function; the stored data area may store data (such as read retry) created according to the use of the computer device number of times and the number of ECC error bits, etc.) and so on. Additionally, the memory may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid state storage device.
本发明实施例还提供了一种计算机可读存储介质，计算机可读存储介质存储有机器可运行指令，计算机可运行指令在被处理器调用和运行时，计算机可运行指令促使处理器运行上述实施例的坏块筛选方法的步骤。Embodiments of the present invention further provide a computer-readable storage medium, where the computer-readable storage medium stores machine-executable instructions, and when the computer-executable instructions are invoked and executed by a processor, the computer-executable instructions cause the processor to execute the above implementation Example of the steps of the bad block filtering method.
在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和结构图显示了根据本发明的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，所述模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，结构图和/或流程图中的每个方框、以及结构图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。In the several embodiments provided in this application, it should be understood that the disclosed apparatus and method may also be implemented in other manners. The apparatus embodiments described above are only schematic, for example, the flowcharts and structural diagrams in the accompanying drawings show possible implementation architectures and functions of apparatuses, methods and computer program products according to various embodiments of the present invention and operation. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code that contains one or more functions for implementing the specified logical function(s) executable instructions. It should also be noted that, in alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It is also noted that each block of the block diagrams and/or flow diagrams, and combinations of blocks in the block diagrams and/or flow diagrams, can be implemented using dedicated hardware-based systems that perform the specified functions or actions. be implemented, or may be implemented in a combination of special purpose hardware and computer instructions.
另外，在本发明各个实施例中的各功能模块或单元可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或更多个模块集成形成一个独立的部分。In addition, each functional module or unit in each embodiment of the present invention may be integrated to form an independent part, or each module may exist alone, or two or more modules may be integrated to form an independent part.
所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是智能手机、个人计算机、服务器、或者网络设备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention can be embodied in the form of a software product in essence, or the part that contributes to the prior art or the part of the technical solution. The computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which may be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, Read-Only Memory (ROM, Read-Only Memory), Random Access Memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program codes .
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention. should be included within the protection scope of the present invention.
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| CN202210779329.7APendingCN115148230A (en) | 2022-07-01 | 2022-07-01 | Bad block screening method, device, equipment and storage medium |
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