技术领域technical field
本发明涉及电导率传感器领域,具体涉及温度补偿式片上集成电导率传感器及电导率测量方法。The invention relates to the field of conductivity sensors, in particular to a temperature-compensated on-chip integrated conductivity sensor and a conductivity measurement method.
背景技术Background technique
溶液的电导率与温度密切相关,温度的变化会直接影响电解质的电离度、溶解度、离子迁移速度、溶液黏度等,从而改变溶液电导率。温度升高,电导率增大。电导率仪的温度补偿就是为了克服温度的影响,将溶液在实际温度下的电导率值转换为参考温度(一般为25℃)下的电导率值,使得不同溶液在不同温度下的电导率具有可比性,以满足各行各业比对或控制指标的需要。The conductivity of the solution is closely related to the temperature. The change of temperature will directly affect the ionization degree, solubility, ion migration speed, solution viscosity, etc. of the electrolyte, thereby changing the conductivity of the solution. As the temperature increases, the conductivity increases. The temperature compensation of the conductivity meter is to overcome the influence of temperature and convert the conductivity value of the solution at the actual temperature into the conductivity value at the reference temperature (generally 25°C), so that the conductivity of different solutions at different temperatures has Comparability to meet the needs of various industries to compare or control indicators.
现有的温度补偿式电导率传感器大多是电导率传感单元与温度检测单元分立的结构,这不仅影响补偿精度,也增加了器件整体的体积。Most of the existing temperature-compensated conductivity sensors have separate structures of the conductivity sensing unit and the temperature detection unit, which not only affects the compensation accuracy, but also increases the overall volume of the device.
针对上述的现有技术存在的问题,设计温度补偿式片上集成电导率传感器及电导率测量方法是本发明研究的目的。In view of the above-mentioned problems in the prior art, it is the purpose of the present invention to design a temperature-compensated on-chip integrated conductivity sensor and a conductivity measurement method.
发明内容SUMMARY OF THE INVENTION
针对上述现有技术存在的问题,本发明在于提供温度补偿式片上集成电导率传感器及电导率测量方法,能够有效解决上述现有技术存在的问题。In view of the problems existing in the above-mentioned prior art, the present invention provides a temperature-compensated on-chip integrated conductivity sensor and a conductivity measurement method, which can effectively solve the above-mentioned problems in the prior art.
本发明的技术方案是:The technical scheme of the present invention is:
温度补偿式片上集成电导率传感器,包括:Temperature compensated on-chip conductivity sensor including:
绝缘衬底;insulating substrate;
温度电极,附着于所述绝缘衬底的中央位置;a temperature electrode, attached to the central position of the insulating substrate;
导温薄膜,覆盖于所述温度电极;a thermal conductive film covering the temperature electrode;
一组电压电极,以所述温度电极为中心对称附着于所述温度电极两侧的绝缘衬底上;A set of voltage electrodes is symmetrically attached to the insulating substrate on both sides of the temperature electrode with the temperature electrode as the center;
一组电流电极,以所述温度电极为中心对称附着于相应的电压电极外侧的绝缘衬底上。A group of current electrodes is symmetrically attached to the insulating substrate outside the corresponding voltage electrodes with the temperature electrode as the center.
进一步地,所述温度电极呈蜿蜒状附着于所述绝缘衬底的中央位置,并且所述温度电极的拐弯处设置为平滑的弧形。Further, the temperature electrode is attached to the central position of the insulating substrate in a meandering shape, and the bend of the temperature electrode is set in a smooth arc shape.
进一步地,所述电压电极和/或所述电流电极的末端设置为圆弧结构。Further, the ends of the voltage electrodes and/or the current electrodes are arranged in a circular arc structure.
进一步地,所述温度电极线宽8-12微米,电压电极线宽8-12微米,电流电极线宽80-120微米,导温薄膜厚度250-350纳米,电压电极与电流电极长度均为12-16毫米。Further, the line width of the temperature electrode is 8-12 μm, the line width of the voltage electrode is 8-12 μm, the line width of the current electrode is 80-120 μm, the thickness of the temperature conductive film is 250-350 nm, and the length of the voltage electrode and the current electrode are both 12 μm. -16mm.
进一步地,还包括引线键合焊盘,所述温度电极的两端、所述电压电极、所述电流电极均连接至所述引线键合焊盘,所述引线键合焊盘覆盖有相应的导温薄膜。Further, it also includes a wire bonding pad, both ends of the temperature electrode, the voltage electrode, and the current electrode are all connected to the wire bonding pad, and the wire bonding pad is covered with corresponding Thermal film.
进一步地,所述温度电极、所述电压电极、所述电流电极、所述引线键合焊盘的引线均为铂金属制成。Further, the temperature electrodes, the voltage electrodes, the current electrodes, and the leads of the wire bonding pads are all made of platinum metal.
进一步地,提供一种电导率测量方法,基于所述的温度补偿式片上集成电导率传感器,所述方法包括以下步骤:Further, a conductivity measurement method is provided, based on the temperature-compensated on-chip integrated conductivity sensor, the method includes the following steps:
将所述温度补偿式片上集成电导率传感器与待测液体接触;contacting the temperature-compensated on-chip integrated conductivity sensor with the liquid to be measured;
在两个所述电流电极输入第一交变电流信号I;Input the first alternating current signal I at the two current electrodes;
分别获取两个所述电压电极产生的响应电压信号,计算电压差U;Obtain the response voltage signals generated by the two voltage electrodes respectively, and calculate the voltage difference U;
根据所述第一交变电流信号I和所述电压差U计算待测液体当前温度下的电导率;Calculate the conductivity of the liquid to be measured at the current temperature according to the first alternating current signal I and the voltage difference U;
通过所述温度电极测量待测液体的温度;Measure the temperature of the liquid to be measured by the temperature electrode;
根据所述待测液体的温度对所述待测液体当前温度下的电导率进行补偿,得到待测液体的电导率。The conductivity of the liquid to be tested at the current temperature is compensated according to the temperature of the liquid to be tested to obtain the conductivity of the liquid to be tested.
进一步地,所述第一交变电流信号I为激励频率1.067kHz、幅值0-3.3V 的三角波。Further, the first alternating current signal I is a triangular wave with an excitation frequency of 1.067kHz and an amplitude of 0-3.3V.
进一步地,所述通过所述温度电极测量待测液体的温度包括:Further, the measuring the temperature of the liquid to be measured by the temperature electrode includes:
对所述温度电极输入在0-3.3V内的恒压激励信号,测量当前温度下温度电极的阻值;Input a constant voltage excitation signal within 0-3.3V to the temperature electrode, and measure the resistance value of the temperature electrode at the current temperature;
根据下列公式计算待测液体的温度t:Calculate the temperature t of the liquid to be measured according to the following formula:
其中,α为温度电极的温度系数,R0为0℃下温度电极的阻值,Rt为t温度下温度电极的阻值。Among them, α is the temperature coefficient of the temperature electrode, R0 is the resistance value of the temperature electrode at 0°C, and Rt is the resistance value of the temperature electrode at the temperature t.
进一步地,所述根据所述待测液体的温度对所述待测液体当前温度下的电导率进行补偿,得到待测液体的电导率包括:Further, compensating the conductivity of the liquid to be tested at the current temperature according to the temperature of the liquid to be tested, and obtaining the conductivity of the liquid to be tested includes:
待测液体的电导率Conductivity of the liquid to be measured
其中t为待测液体的温度,σt为当前温度t下的电导率,σ25为25℃下的待测液体的电导率,β为待测液体的温度系数。Where t is the temperature of the liquid to be measured, σt is the electrical conductivity at the current temperature t, σ25 is the electrical conductivity of the liquid to be measured at 25°C, and β is the temperature coefficient of the liquid to be measured.
因此,本发明提供以下的效果和/或优点:Accordingly, the present invention provides the following effects and/or advantages:
本发明的电导率传感器采用四电极式结构,在绝缘衬底从左往右依次有左侧的电流电极、左侧的电压电极、温度电极、右侧的电压电极、右侧的电流电极。由于温度电极内嵌于电压电极中间,且电压电极中间的液体是待测液体,例如液体,可大大提高补偿精度。通过温度电极可以探测待测液体的温度,然后通过在两个电流电极作为电流输入端输入相同的电流信号,电压电极作为电压响应输出端输出响应的电压信号,可以获取得到电压电极之间的电压差,通过电压差、待测液体的温度、温度与电导率的补偿关系即可计算得到当前待测液体在标定温度(例如25℃)下的电导率。The conductivity sensor of the present invention adopts a four-electrode structure, and the insulating substrate has a left current electrode, a left voltage electrode, a temperature electrode, a right voltage electrode, and a right current electrode in order from left to right. Since the temperature electrode is embedded in the middle of the voltage electrode, and the liquid in the middle of the voltage electrode is the liquid to be measured, such as liquid, the compensation accuracy can be greatly improved. The temperature of the liquid to be measured can be detected by the temperature electrode, and then the voltage between the voltage electrodes can be obtained by inputting the same current signal as the current input terminal and the voltage electrode as the voltage response output terminal outputting the corresponding voltage signal. The current conductivity of the liquid to be tested at the calibrated temperature (eg 25°C) can be calculated through the voltage difference, the temperature of the liquid to be tested, and the compensation relationship between temperature and conductivity.
所述温度电极的拐弯处设置为平滑的弧形。这样的结构可以与待测液体充分接触并获取其更为准确的温度值。所述电压电极和所述电流电极的末端设置为圆弧结构。末端为圆弧结构可以有效地降低电荷集聚的影响,提高测量精度。The bend of the temperature electrode is set as a smooth arc. Such a structure can fully contact the liquid to be tested and obtain a more accurate temperature value. The ends of the voltage electrode and the current electrode are arranged in a circular arc structure. The arc structure at the end can effectively reduce the influence of charge accumulation and improve the measurement accuracy.
此外,本发明采用芯片级微纳制造工艺制备,所制备的传感器一致性好、精度高,电导率电极和温度电极设计为同一工艺层,大大简化了工艺步骤,降低工艺成本,本发明所公开的一体化集成温度补偿式电导率传感器整体尺寸为毫米级,可实现批量化、低成本生产。In addition, the present invention is prepared by a chip-level micro-nano manufacturing process, the prepared sensor has good consistency and high precision, and the conductivity electrode and the temperature electrode are designed to be the same process layer, which greatly simplifies the process steps and reduces the process cost. The overall size of the integrated temperature-compensated conductivity sensor is millimeter level, which can realize mass and low-cost production.
应当明白,本发明的上文的概述和下面的详细说明是示例性和解释性的,并且意在提供对如要求保护的本发明的进一步的解释。It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
附图说明Description of drawings
图1为本发明实施例提供的温度补偿式片上集成电导率传感器的结构示意图。FIG. 1 is a schematic structural diagram of a temperature-compensated on-chip integrated conductivity sensor provided by an embodiment of the present invention.
图2为本发明实施例提供的电压电极和所述电流电极的末端的结构示意图。FIG. 2 is a schematic structural diagram of a voltage electrode and an end of the current electrode provided in an embodiment of the present invention.
图3为采用本发明实施例提供的电导率传感器测得的标定结果图。FIG. 3 is a diagram of a calibration result measured by using the conductivity sensor provided by the embodiment of the present invention.
图4为采用本发明实施例提供的电导率传感器与商用电导率传感器测得的溶液电导率测试数据图。FIG. 4 is a graph of test data of solution conductivity measured by using the conductivity sensor provided by the embodiment of the present invention and a commercial conductivity sensor.
附图标记说明:Description of reference numbers:
1-绝缘衬底,2-温度电极,3-电压电极,4-电流电机,5-引线键合焊盘,6-导温薄膜。1-Insulating substrate, 2-Temperature electrode, 3-Voltage electrode, 4-Current motor, 5-Wire bonding pad, 6-Temperature conducting film.
具体实施方式Detailed ways
为了便于本领域技术人员理解,现将实施例结合附图对本发明的结构作进一步详细描述:In order to facilitate the understanding of those skilled in the art, the structure of the present invention will be further described in detail with reference to the accompanying drawings:
参考图1-2,温度补偿式片上集成电导率传感器,包括:Referring to Figure 1-2, a temperature compensated on-chip conductivity sensor includes:
绝缘衬底1;insulating substrate 1;
温度电极2,附着于所述绝缘衬底1的中央位置;The
导温薄膜6,覆盖于所述温度电极2;本实施例中,导温薄膜6为氮化硅薄膜。氮化硅薄膜的导热率高,绝缘性好,可在保证温度检测的同时避免对电导率电极产生影响。The temperature-conducting
一组电压电极3,以所述温度电极2为中心对称附着于所述温度电极2两侧的绝缘衬底1上;A set of
一组电流电极4,以所述温度电极2为中心对称附着于相应的电压电极3 外侧的绝缘衬底1上。A group of
具体地,本实施例中,所述绝缘衬底1为方形或其他形状的薄片状结构,绝缘衬底1作为绝缘部件以及提供其他部件附着的基材,温度电极2、电压电极3、电流电极4、导温薄膜6均设置于绝缘衬底1的同一面。Specifically, in this embodiment, the insulating substrate 1 is a square or other shaped sheet-like structure, the insulating substrate 1 is used as an insulating component and a substrate for providing other components to attach, a
本实施例的电导率传感器采用四电极式结构,在绝缘衬底1从左往右依次有左侧的电流电极4、左侧的电压电极3、温度电极2、右侧的电压电极3、右侧的电流电极4。同时,采用对称的方式设置,即左右的电流电极4的结构相同,左右的电压电极3的结构相同,左右的电流电极4与温度电极2的距离相同,左右的电压电极3与温度电极2的距离相同。由于温度电极2内嵌于电压电极3中间,且电压电极3中间接触的液体是待测液体,例如海水,可大大提高补偿精度。通过温度电极2可以探测待测液体的温度,然后通过在两个电流电极4作为电流输入端输入相同的电流信号,电压电极3作为电压响应输出端输出响应的电压信号,可以获取得到电压电极3之间的电压差,通过电压差、待测液体的温度、温度与电导率的补偿关系即可计算得到当前待测液体在标定温度(例如25℃)下的电导率。The conductivity sensor of this embodiment adopts a four-electrode structure, and the insulating substrate 1 has a
接下来介绍本申请的一些优化方向。Next, some optimization directions of this application are introduced.
进一步地,所述温度电极2呈蜿蜒状附着于所述绝缘衬底的中央位置,并且所述温度电极2的拐弯处设置为平滑的弧形。这样的结构可以与待测液体充分接触并获取其更为准确的温度值。Further, the
进一步地,所述电压电极3和/或所述电流电极4的末端设置为圆弧结构。末端为圆弧结构可以有效地降低电荷集聚的影响,提高测量精度。Further, the ends of the
进一步地,所述温度电极2线宽8-12微米,电压电极3线宽8-12微米,电流电极4线宽80-120微米,导温薄膜6厚度250-350纳米,电压电极3与电流电极4长度均为12-16毫米。本实施例中,温度电极2线宽10微米,电压电极3线宽10微米,电流电极4线宽100微米,导温薄膜6厚度300纳米,电压电极3与电流电极4长度均为14毫米。该参数可以提高测量的稳定性和量程以及精度。在其他实施例中也可以是对应范围内的任意数字。Further, the line width of the
本实施例中,所有电极均采用电子束蒸发制备成纳米级铂电极薄膜,所有电极均采用高精度紫外光刻制备成微米级线宽的电极;温度电极2用导温薄膜6覆盖。利用芯片级微纳制造工艺制备的薄膜纯度高、一致性好,极大降低出现薄膜缺陷、膜厚不均的问题,可大大提高检测精度In this embodiment, all electrodes are prepared into nano-scale platinum electrode films by electron beam evaporation, and all electrodes are prepared into electrodes with micron-scale line width by high-precision ultraviolet lithography; The film prepared by the chip-level micro-nano manufacturing process has high purity and good consistency, which greatly reduces the problems of film defects and uneven film thickness, and can greatly improve the detection accuracy.
进一步地,还包括引线键合焊盘5,所述温度电极2的两端、所述电压电极3、所述电流电极4均连接至所述引线键合焊盘5,所述引线键合焊盘5 覆盖有相应的导温薄膜6。Further, it also includes a
进一步地,所述温度电极2、所述电压电极3、所述电流电极4、所述引线键合焊盘5的引线均为铂金属制成。Further, the
下面介绍基于上述所述的温度补偿式片上集成电导率传感器的使用方法。应了解到,在本实施例中所提及的步骤,除特别说明其顺序的,均可依实际需要调整其前后顺序,甚至可同时或部分同时执行。The following describes the use of the above-mentioned temperature-compensated on-chip conductivity sensor. It should be understood that, unless the sequence of the steps mentioned in this embodiment is specified, the sequence of the steps may be adjusted according to actual needs, and may even be performed simultaneously or partially simultaneously.
液体电导率测量方法,基于上述所述的温度补偿式片上集成电导率传感器,所述方法包括以下步骤:A liquid conductivity measurement method, based on the above-mentioned temperature-compensated on-chip integrated conductivity sensor, the method includes the following steps:
S1,将所述温度补偿式片上集成电导率传感器与待测液体接触;本实施例中,待测液体是海水。S1, the temperature-compensated on-chip integrated conductivity sensor is brought into contact with the liquid to be measured; in this embodiment, the liquid to be measured is seawater.
S2,在两个所述电流电极输入第一交变电流信号I,所述第一交变电流信号I为激励频率1.067kHz、幅值0-3.3V的三角波;在其他实施例中,第一交变电流信号I也可以是其他类型的信号。S2, input a first alternating current signal I to the two current electrodes, the first alternating current signal I is a triangular wave with an excitation frequency of 1.067 kHz and an amplitude of 0-3.3 V; in other embodiments, the first alternating current signal I is The alternating current signal I may also be other types of signals.
S3,分别获取两个所述电压电极产生的响应电压信号,计算两个电压电极的电压差U;S3, respectively acquiring the response voltage signals generated by the two voltage electrodes, and calculating the voltage difference U of the two voltage electrodes;
S4,根据所述第一交变电流信号I和所述电压差U计算待测液体当前温度下的电导率;待测液体当前温度下的电导率S4, according to the first alternating current signal I and the voltage difference U, calculate the conductivity of the liquid to be tested at the current temperature; the conductivity of the liquid to be tested at the current temperature
S5,通过所述温度电极测量待测液体的温度;S5, measure the temperature of the liquid to be measured by the temperature electrode;
所述通过所述温度电极测量待测液体的温度包括:The measuring the temperature of the liquid to be measured by the temperature electrode includes:
对所述温度电极输入在0-3.3V内的恒压激励信号,测量当前温度下温度电极的阻值;Input a constant voltage excitation signal within 0-3.3V to the temperature electrode, and measure the resistance value of the temperature electrode at the current temperature;
根据下列公式计算待测液体的温度t:Calculate the temperature t of the liquid to be measured according to the following formula:
其中,α为温度电极的温度系数,R0为0℃下温度电极的阻值,Rt为t温度下温度电极的阻值,本实施例中,温度电极的材质为铂金属。α is the temperature coefficient of the temperature electrode, R0 is the resistance value of the temperature electrode at 0°C, and Rt is the resistance value of the temperature electrode at t temperature. In this embodiment, the material of the temperature electrode is platinum metal.
S6,根据所述待测液体的温度对所述待测液体当前温度下的电导率进行补偿,得到待测液体的电导率;S6, according to the temperature of the liquid to be tested, the conductivity of the liquid to be tested at the current temperature is compensated to obtain the conductivity of the liquid to be tested;
所述根据所述待测液体的温度对所述待测液体当前温度下的电导率进行补偿,得到待测液体的电导率包括:Compensating the electrical conductivity at the current temperature of the liquid to be measured according to the temperature of the liquid to be measured, and obtaining the electrical conductivity of the liquid to be measured includes:
待测液体的电导率Conductivity of the liquid to be measured
其中t为待测液体的温度,σt为当前温度t下的电导率,σ25为25℃下的待测液体的电导率,β为待测液体的温度系数。Where t is the temperature of the liquid to be measured, σt is the electrical conductivity at the current temperature t, σ25 is the electrical conductivity of the liquid to be measured at 25°C, and β is the temperature coefficient of the liquid to be measured.
实验数据Experimental data
采用上述提供的传感器和/或采用上述提供的测量方法进行实际操作,得到如图3所示的实验数据图,图3为电导率传感器的标定结果。Using the sensor provided above and/or using the measurement method provided above for actual operation, an experimental data graph as shown in FIG. 3 is obtained, and FIG. 3 is the calibration result of the conductivity sensor.
参考图3,通过本上述提供的传感器和/或采用上述提供的测量方法,上述提供的传感器和/或采用上述提供的测量方法的电路输出与标准电导率呈现出良好的线性关系,其中R2=0.99968,表明上述提供的传感器和/或采用上述提供的测量方法测得的实验数据与标准电导率高度相关。Referring to FIG. 3, through the sensor provided above and/or using the measurement method provided above, the output of the sensor provided above and/or the circuit output using the measurement method provided above exhibits a good linear relationship with the standard conductivity, wherein R2 =0.99968, indicating that the sensor provided above and/or the experimental data measured by the measurement method provided above is highly correlated with the standard conductivity.
如图4所示,通过本上述提供的传感器和/或采用上述提供的测量方法与意大利哈纳公司的现有电导率传感器进行实验对比,本发明与意大利哈纳公司的电导率传感器测试结果几乎一致,表明本发明的设计的合理性与可行性。此外,本发明的测试最大量程可达107mS/cm,在0-77mS/cm之间的测量精确度为±0.1mS/cm。As shown in FIG. 4 , by comparing the sensor provided above and/or using the measurement method provided above with the existing conductivity sensor of Hana Company in Italy, the test results of the present invention and the conductivity sensor of Hana Company in Italy are almost the same. Consistent, indicating the rationality and feasibility of the design of the present invention. In addition, the maximum measurement range of the present invention can reach 107mS/cm, and the measurement accuracy between 0-77mS/cm is ±0.1mS/cm.
应当注意的是,在权利要求中,不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的部件或步骤。位于部件之前的单词“一”或“一个”不排除存在多个这样的部件。本发明可以借助于包括有若干不同部件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中,这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。It should be noted that, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not preclude the presence of a plurality of such elements. The invention can be implemented by means of hardware comprising several different components and by means of a suitably programmed computer. In a unit claim enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, and third, etc. do not denote any order. These words can be interpreted as names.
尽管已描述了本发明的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。Although preferred embodiments of the present invention have been described, additional changes and modifications to these embodiments may occur to those skilled in the art once the basic inventive concepts are known. Therefore, the appended claims are intended to be construed to include the preferred embodiment and all changes and modifications that fall within the scope of the present invention.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求、等同技术的范围之内,则本发明也意图包含这些改动和变型在内。It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims and equivalent technologies of the present invention, the present invention is also intended to include these modifications and variations.
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected", "fixed" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of the two elements or the interaction relationship between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不应理解为必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be construed as necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples described in this specification, as well as the features of the different embodiments or examples, without conflicting each other.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116626395A (en)* | 2023-07-24 | 2023-08-22 | 西安热工研究院有限公司 | System and method for online monitoring of volume resistivity of fire-resistant oil |
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993945A (en)* | 1974-08-02 | 1976-11-23 | George Kent Limited | Measuring cells for measuring electrical conductivity of liquids |
US20020167322A1 (en)* | 2001-05-08 | 2002-11-14 | Dongming He | Integrated thin film liquid conductivity sensor |
CN103592341A (en)* | 2013-11-12 | 2014-02-19 | 广州中国科学院先进技术研究所 | Contact type four-electrode salinity sensor based on MEMS (micro electro mechanical systems) technology and detection method of salinity sensor |
CN107677312A (en)* | 2017-09-26 | 2018-02-09 | 哈尔滨工程大学 | A kind of chip seawater conductivity-temperature-depth system |
CN109507265A (en)* | 2019-01-08 | 2019-03-22 | 武汉新烽光电股份有限公司 | Throw-in type ammonia nitrogen water quality sensor |
CN111174687A (en)* | 2020-02-18 | 2020-05-19 | 上海交通大学 | Flexible strain sensor chip with temperature compensation element and preparation method thereof |
CN212622359U (en)* | 2020-05-15 | 2021-02-26 | 上海水仪科技有限公司 | Quadrupole type titanium alloy conductivity electrode |
CN114440960A (en)* | 2020-11-03 | 2022-05-06 | 中国科学院微电子研究所 | A conductivity temperature sensor system |
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993945A (en)* | 1974-08-02 | 1976-11-23 | George Kent Limited | Measuring cells for measuring electrical conductivity of liquids |
US20020167322A1 (en)* | 2001-05-08 | 2002-11-14 | Dongming He | Integrated thin film liquid conductivity sensor |
CN103592341A (en)* | 2013-11-12 | 2014-02-19 | 广州中国科学院先进技术研究所 | Contact type four-electrode salinity sensor based on MEMS (micro electro mechanical systems) technology and detection method of salinity sensor |
CN107677312A (en)* | 2017-09-26 | 2018-02-09 | 哈尔滨工程大学 | A kind of chip seawater conductivity-temperature-depth system |
CN109507265A (en)* | 2019-01-08 | 2019-03-22 | 武汉新烽光电股份有限公司 | Throw-in type ammonia nitrogen water quality sensor |
CN111174687A (en)* | 2020-02-18 | 2020-05-19 | 上海交通大学 | Flexible strain sensor chip with temperature compensation element and preparation method thereof |
CN212622359U (en)* | 2020-05-15 | 2021-02-26 | 上海水仪科技有限公司 | Quadrupole type titanium alloy conductivity electrode |
CN114440960A (en)* | 2020-11-03 | 2022-05-06 | 中国科学院微电子研究所 | A conductivity temperature sensor system |
Title |
---|
孙风光;张洪泉;刘秀洁;周岩;: "四电极海水电导率传感器设计", 传感器与微系统, vol. 37, no. 12, 5 December 2018 (2018-12-05), pages 86 - 89* |
王清葵: "送电线路运行和检修", vol. 2003, 31 December 2003, 中国电力出版社, pages: 204* |
美国金属学会主编;包芳涵等译: "金属手册 第9版 第6卷 焊接、硬钎焊、软钎焊", vol. 1994, 31 July 1994, 机械工业出版社, pages: 263* |
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116626395A (en)* | 2023-07-24 | 2023-08-22 | 西安热工研究院有限公司 | System and method for online monitoring of volume resistivity of fire-resistant oil |
Publication | Publication Date | Title |
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