CN114792634B - Flexible packaging structure and manufacturing method thereof - Google Patents
Flexible packaging structure and manufacturing method thereofDownload PDFInfo
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- CN114792634B CN114792634BCN202210732242.4ACN202210732242ACN114792634BCN 114792634 BCN114792634 BCN 114792634BCN 202210732242 ACN202210732242 ACN 202210732242ACN 114792634 BCN114792634 BCN 114792634B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to a flexible packaging structure and a manufacturing method thereof.
Background
In the manufacturing process of the existing flexible packaging structure, a semiconductor chip is usually arranged on a flexible circuit board, and then a flexible packaging layer is arranged, the flexible packaging layer wraps the semiconductor chip, and meanwhile, in order to prevent electromagnetic interference, a metal shielding layer is usually formed on the flexible packaging layer. In the forming process of the shielding layer in the prior art, a whole metal layer is usually deposited on the flexible packaging layer as a metal shielding layer, and the flexible packaging member is easily cracked in the process of repeatedly bending, so that the electromagnetic shielding effect is poor.
Disclosure of Invention
The invention aims to provide a manufacturing method of a flexible packaging structure, which can improve the prevention of cracks of a metal shielding layer.
In order to achieve the above object, the present invention provides a method for manufacturing a flexible package structure, including the steps of: a carrier substrate is provided on which a plurality of semiconductor die are disposed. Forming a first encapsulation layer on the carrier substrate, the first encapsulation layer encapsulating the plurality of semiconductor dies. Forming a first shielding layer on the first packaging layer, wherein the specific preparation process of the first shielding layer is as follows: the method comprises the steps of forming a first metal nanowire layer on a first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer, wherein the second metal nanowire layer covers the first metal bumps. Forming a second packaging layer on the first shielding layer, and forming a second shielding layer on the second packaging layer, wherein the specific preparation process of the second shielding layer is as follows: forming a third metal nanowire layer on the second packaging layer, then depositing and forming a plurality of second metal bumps arranged in an array on the third metal nanowire layer, and then forming a fourth metal nanowire layer on the third metal nanowire layer, wherein the fourth metal nanowire layer covers the second metal bumps, and the projection of the second metal bumps in the vertical direction covers the corresponding first gaps. A third encapsulation layer is formed on the second shielding layer. And removing the carrier substrate, and forming a redistribution circuit layer electrically connected with the plurality of semiconductor dies on the bottom surface of the first packaging layer.
Preferably, the carrier substrate is a rigid substrate, the material of the carrier substrate is one of metal, ceramic, semiconductor and plastic, an adhesive layer is disposed on the carrier substrate before the plurality of semiconductor dies are disposed on the carrier substrate, and the plurality of semiconductor dies are further bonded by the adhesive layer.
Preferably, the materials of the first encapsulation layer, the second encapsulation layer and the third encapsulation layer comprise silicone rubber, polyimide, polydimethylsiloxane or thermoplastic polyurethane.
Preferably, the first metal nanowire layer, the second metal nanowire layer, the third metal nanowire layer and the fourth metal nanowire layer are formed by a spin coating process.
Preferably, the first metal bump and the second metal bump are formed by electroplating, electroless plating, thermal evaporation, magnetron sputtering, or electron beam evaporation.
Preferably, the redistribution line layer includes a plurality of metal line layers and a dielectric layer wrapping the plurality of metal line layers.
Preferably, conductive bumps are formed on the redistribution line layer.
The invention also provides a flexible packaging structure which is manufactured and formed by adopting the method.
Compared with the prior art, the flexible packaging structure and the manufacturing method thereof have the following beneficial effects: the specific preparation process of the first shielding layer comprises the following steps: the method comprises the steps of forming a first metal nanowire layer on a first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer. The second metal nanowire layer covers the first metal bump. Forming a second packaging layer on the first shielding layer, and forming a second shielding layer on the second packaging layer, wherein the specific preparation process of the second shielding layer is as follows: the method comprises the steps of forming a third metal nanowire layer on a second packaging layer, depositing and forming a plurality of second metal lugs arranged in an array on the third metal nanowire layer, forming a fourth metal nanowire layer on the third metal nanowire layer, covering the second metal lugs by the fourth metal nanowire layer, covering corresponding first gaps by the second metal lugs in a projection in the vertical direction, and ensuring the electromagnetic shielding performance of a shielding layer of a flexible packaging structure by optimizing the structure and the forming method of the shielding layer, wherein cracks can not occur even if the shielding layer is repeatedly bent.
Drawings
FIG. 1 is a schematic diagram of a structure in which a semiconductor die and a first package layer are sequentially disposed on a carrier substrate;
FIG. 2 is a schematic diagram of a first shielding layer formed on a first packaging layer;
fig. 3 is a schematic structural diagram of sequentially forming a second encapsulation layer, a second shielding layer and a third encapsulation layer on the first shielding layer;
fig. 4 is a schematic diagram of a structure in which a redistribution trace layer electrically connected to a plurality of semiconductor dies is formed on a bottom surface of a first package layer.
Detailed Description
For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.
It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 4, the present embodiment provides a manufacturing method of a flexible package structure, including the following steps:
as shown in fig. 1, acarrier substrate 10 is provided on which a plurality ofsemiconductor die 20 are disposed.
In a specific embodiment, thecarrier substrate 10 is a rigid substrate, the material of thecarrier substrate 10 is one of metal, ceramic, semiconductor and plastic, an adhesive layer is disposed on thecarrier substrate 10 before the plurality of semiconductor dies 20 are disposed on thecarrier substrate 10, and the plurality of semiconductor dies 20 are further bonded by the adhesive layer.
In a specific embodiment, a ceramic material is used as thecarrier substrate 10, and a resin adhesive material is then coated on thecarrier substrate 10 to form an adhesive layer, more specifically, a temporary adhesive layer, which can lose its adhesiveness under heating or light conditions, and is used to adhere the plurality of semiconductor dies 20.
In a particular embodiment, the bottom surface of thesemiconductor die 20 is provided with conductive pads (not shown) to facilitate electrical extraction ofsubsequent semiconductor die 20.
Afirst encapsulation layer 30 is then formed on thecarrier substrate 10, thefirst encapsulation layer 30 encapsulating the plurality of semiconductor dies 20.
In a specific embodiment, the material of thefirst encapsulation layer 30 includes silicone rubber, polyimide, polydimethylsiloxane, or thermoplastic polyurethane, and more specifically, is formed by a suitable process such as coating or molding.
As shown in fig. 2, afirst shielding layer 40 is formed on thefirst encapsulation layer 30, and a specific preparation process of thefirst shielding layer 40 is as follows: the method comprises the steps of forming a first metal nanowire layer on a first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer, wherein the second metal nanowire layer covers the first metal bumps.
In a specific embodiment, the first and second metal nanowire layers are both formed by a spin coating process.
In a specific embodiment, the first metal bump is formed by electroplating, electroless plating, thermal evaporation, magnetron sputtering, or electron beam evaporation.
In a specific embodiment, the metal nanowires in the first metal nanowire layer and the second metal nanowire layer are silver nanowires, gold nanowires, nickel nanowires or platinum nanowires, and in a more specific preparation process, taking silver nanowires as an example, the silver nanowires are spin-coated with a silver nanowire ethanol suspension with a concentration of 30-150mg/ml, the spin-coating rotation speed is 1500-.
In the specific preparation process of thefirst shielding layer 40, under the condition of 2500 rpm, a silver nanowire ethanol suspension with a concentration of 100mg/ml of silver nanowires is spin-coated, then heat treatment is carried out for 15 minutes at 105 ℃ to form a first metal nanowire layer, then a photoresist material is coated on the first metal nanowire layer, a photoresist mask is formed through an exposure and development process, electroplating copper treatment is carried out by utilizing the photoresist mask to form a plurality of first copper bumps arranged in an array, the first copper bumps are round or square, the side length or diameter of each first copper bump is 100-1000 microns, the size of a first gap adjacent to each first copper bump is 300-600 microns, and then the silver nanowire ethanol suspension with a concentration of 120mg/ml of silver nanowires is spin-coated under the condition of 1500 rpm, and then, carrying out heat treatment at 105 ℃ for 15 minutes to form a second metal nanowire layer, wherein the first metal nanowire layer, the plurality of first copper bumps arranged in an array and the second metal nanowire layer together serve as afirst shielding layer 40, and thefirst shielding layer 40 has excellent bending performance.
As shown in fig. 3, asecond encapsulation layer 50 is formed on thefirst shielding layer 40, and asecond shielding layer 60 is formed on thesecond encapsulation layer 50, where the specific preparation process of thesecond shielding layer 60 is as follows: forming a third metal nanowire layer on thesecond package layer 50, depositing a plurality of second metal bumps arranged in an array on the third metal nanowire layer, and forming a fourth metal nanowire layer on the third metal nanowire layer, wherein the fourth metal nanowire layer covers the second metal bumps, and a projection of the second metal bumps in a vertical direction covers the corresponding first gaps. Athird encapsulation layer 70 is then formed on thesecond shield layer 60.
In a specific implementation, the material of thesecond encapsulation layer 50 and thethird encapsulation layer 70 includes silicone rubber, polyimide, polydimethylsiloxane, or thermoplastic polyurethane, and more specifically, is formed by a suitable process such as coating or molding.
In a specific implementation, the third metal nanowire layer and the fourth metal nanowire layer are both formed by a spin coating process.
In a specific embodiment, the second metal bump is formed by electroplating, electroless plating, thermal evaporation, magnetron sputtering or electron beam evaporation.
In a specific embodiment, the metal nanowires in the third metal nanowire layer and the fourth metal nanowire layer are silver nanowires, gold nanowires, nickel nanowires or platinum nanowires, and in a more specific preparation process, taking silver nanowires as an example, the silver nanowires are spin-coated with a silver nanowire ethanol suspension with a concentration of 30-150mg/ml, the spin-coating rotation speed is 1500-.
In the specific preparation process of thesecond shielding layer 60, an ethanol suspension of silver nanowires with a concentration of 100mg/ml is spin-coated at 2500 rpm, then heat-treated at 105 ℃ for 15 minutes to form a third metal nanowire layer, then a photoresist material is coated on the third metal nanowire layer, a photoresist mask is formed by an exposure and development process, copper electroplating treatment is performed by using the photoresist mask to form a plurality of second copper bumps arranged in an array, the first copper bumps are circular or square, the side length or diameter of each second copper bump is 100-, the third metal nanowire layer, the plurality of second copper bumps arranged in an array and the fourth metal nanowire layer are jointly used as asecond shielding layer 60, thesecond shielding layer 60 has excellent bending performance, and the projection of the second metal bumps in the vertical direction covers the corresponding first gaps, so that the shielding layer has excellent shielding performance and bending performance.
As shown in fig. 4, thecarrier substrate 10 is removed and aredistribution line layer 80 electrically connected to the plurality ofsemiconductor dies 20 is formed on the bottom surface of thefirst encapsulation layer 30.
In a particular embodiment, theredistribution line layer 80 includes a plurality of metal line layers and a dielectric layer encasing the plurality of metal line layers.
In a specific embodiment,conductive bumps 81 are formed on theredistribution line layer 80 to facilitate subsequent electrical extraction.
The invention also provides a flexible packaging structure which is manufactured and formed by adopting the method.
In other embodiments, the present invention provides a method for manufacturing a flexible package structure, which includes the following steps:
a carrier substrate is provided on which a plurality of semiconductor die are disposed.
Forming a first encapsulation layer on the carrier substrate, the first encapsulation layer encapsulating the plurality of semiconductor dies.
Forming a first shielding layer on the first packaging layer, wherein the specific preparation process of the first shielding layer is as follows: the method comprises the steps of forming a first metal nanowire layer on a first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer, wherein the second metal nanowire layer covers the first metal bumps.
Forming a second packaging layer on the first shielding layer, and forming a second shielding layer on the second packaging layer, wherein the specific preparation process of the second shielding layer is as follows: forming a third metal nanowire layer on the second packaging layer, then depositing and forming a plurality of second metal bumps arranged in an array on the third metal nanowire layer, and then forming a fourth metal nanowire layer on the third metal nanowire layer, wherein the fourth metal nanowire layer covers the second metal bumps, and the projection of the second metal bumps in the vertical direction covers the corresponding first gaps.
And forming a third packaging layer on the second shielding layer.
And removing the carrier substrate, and forming a redistribution circuit layer electrically connected with the plurality of semiconductor dies on the bottom surface of the first packaging layer.
According to one embodiment of the present invention, the carrier substrate is a rigid substrate, the material of the carrier substrate is one of metal, ceramic, semiconductor, and plastic, an adhesive layer is provided on the carrier substrate before the plurality of semiconductor dies are provided on the carrier substrate, and the plurality of semiconductor dies are further bonded by the adhesive layer.
According to one embodiment of the present invention, the material of the first encapsulation layer, the second encapsulation layer and the third encapsulation layer comprises silicone rubber, polyimide, polydimethylsiloxane or thermoplastic polyurethane.
According to one embodiment of the present invention, the first metal nanowire layer, the second metal nanowire layer, the third metal nanowire layer, and the fourth metal nanowire layer are all formed by a spin coating process.
According to an embodiment of the present invention, the first metal bump and the second metal bump are formed by electroplating, electroless plating, thermal evaporation, magnetron sputtering, or electron beam evaporation.
According to one embodiment of the invention, the redistribution line layer comprises a multilayer metal line layer and a dielectric layer encasing the multilayer metal line layer.
According to one embodiment of the present invention, conductive bumps are formed on the redistribution line layer.
According to an embodiment of the present invention, the present invention further provides a flexible packaging structure manufactured by the above method.
In the manufacturing process of the flexible packaging structure, the specific preparation process of the first shielding layer is as follows: the method comprises the steps of forming a first metal nanowire layer on a first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer, wherein the second metal nanowire layer covers the first metal bumps. Forming a second packaging layer on the first shielding layer, and forming a second shielding layer on the second packaging layer, wherein the specific preparation process of the second shielding layer is as follows: the method comprises the steps of forming a third metal nanowire layer on a second packaging layer, depositing and forming a plurality of second metal lugs arranged in an array on the third metal nanowire layer, forming a fourth metal nanowire layer on the third metal nanowire layer, covering the second metal lugs by the fourth metal nanowire layer, covering corresponding first gaps by the second metal lugs in a projection in the vertical direction, and ensuring the electromagnetic shielding performance of a shielding layer of a flexible packaging structure by optimizing the structure and the forming method of the shielding layer, wherein cracks can not occur even if the shielding layer is repeatedly bent.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A manufacturing method of a flexible packaging structure is characterized in that: the method comprises the following steps:
providing a carrier substrate on which a plurality of semiconductor dies are disposed;
forming a first encapsulation layer on the carrier substrate, the first encapsulation layer encapsulating the plurality of semiconductor dies;
forming a first shielding layer on the first packaging layer, wherein the specific preparation process of the first shielding layer is as follows: forming a first metal nanowire layer on the first packaging layer, then depositing and forming a plurality of first metal bumps arranged in an array on the first metal nanowire layer, wherein a first gap is formed between every two adjacent first metal bumps, and then forming a second metal nanowire layer on the first metal nanowire layer, wherein the second metal nanowire layer covers the first metal bumps;
forming a second packaging layer on the first shielding layer, and forming a second shielding layer on the second packaging layer, wherein the specific preparation process of the second shielding layer is as follows: forming a third metal nanowire layer on the second packaging layer, depositing and forming a plurality of second metal bumps arranged in an array on the third metal nanowire layer, and forming a fourth metal nanowire layer on the third metal nanowire layer, wherein the fourth metal nanowire layer covers the second metal bumps, and the projections of the second metal bumps in the vertical direction cover the corresponding first gaps;
forming a third encapsulation layer on the second shielding layer;
removing the carrier substrate and forming a redistribution circuit layer electrically connected with the plurality of semiconductor dies on the bottom surface of the first packaging layer.
2. The method of manufacturing a flexible package structure according to claim 1, wherein: the carrier substrate is a rigid substrate, the carrier substrate is made of one of metal, ceramic, semiconductor and plastic, an adhesive layer is arranged on the carrier substrate before the plurality of semiconductor tube cores are arranged on the carrier substrate, and then the plurality of semiconductor tube cores are bonded by the adhesive layer.
3. The method of manufacturing a flexible package structure according to claim 1, wherein: the materials of the first packaging layer, the second packaging layer and the third packaging layer comprise silicon rubber, polyimide, polydimethylsiloxane or thermoplastic polyurethane.
4. The method of manufacturing a flexible package structure according to claim 1, wherein: the first metal nanowire layer, the second metal nanowire layer, the third metal nanowire layer and the fourth metal nanowire layer are all formed through a spin coating process.
5. The method of manufacturing a flexible package structure according to claim 1, wherein: the first metal bump and the second metal bump are formed by electroplating, chemical plating, thermal evaporation, magnetron sputtering or electron beam evaporation.
6. The method of manufacturing a flexible package structure according to claim 1, wherein: the redistribution line layer includes a plurality of metal line layers and a dielectric layer encasing the plurality of metal line layers.
7. The method of manufacturing a flexible package structure according to claim 1, wherein: conductive bumps are formed on the redistribution line layer.
8. A flexible packaging structure, characterized in that it is manufactured by the method of any one of claims 1 to 7.
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| CN202210732242.4ACN114792634B (en) | 2022-06-27 | 2022-06-27 | Flexible packaging structure and manufacturing method thereof |
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| CN118380336B (en)* | 2024-06-21 | 2024-09-06 | 日月新半导体(威海)有限公司 | Fan-out type semiconductor packaging component and forming method thereof |
| CN118471803A (en)* | 2024-07-09 | 2024-08-09 | 威海嘉瑞光电科技股份有限公司 | Die package and forming method thereof |
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| CN111584374A (en)* | 2020-05-21 | 2020-08-25 | 徐彩芬 | Packaging method of semiconductor device |
| CN111883433A (en)* | 2020-07-03 | 2020-11-03 | 徐彩芬 | Semiconductor chip package and method for forming the same |
| CN113270326A (en)* | 2021-07-19 | 2021-08-17 | 江苏华昶熠电子科技有限公司 | Fingerprint identification packaging component and preparation method thereof |
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