技术领域Technical Field
本发明是关于一种电路板内介电层厚度之量测装置及量测方法,特别是指一种具有发光源及镜头模块的电路板内介电层厚度之量测装置及量测方法。The present invention relates to a measuring device and a measuring method for the thickness of a dielectric layer in a circuit board, and in particular to a measuring device and a measuring method for the thickness of a dielectric layer in a circuit board having a light source and a lens module.
背景技术Background technique
目前,主要是以破坏性手法量测电路板的介电层厚度,例如:须先切除取下一部分面积之待测电路板,制作成量测切片后,再使用光学显微镜(Optical Microscope)或扫描电子显微镜(Scanning Electron Microscope)量测介电层的厚度。然而,此种量测方法非常耗费时间及心力,且还会折损电路板较大的面积使得该电路板遭到报废。At present, the thickness of the dielectric layer of the circuit board is mainly measured by destructive methods, for example, a portion of the circuit board to be tested must be cut off first, and then an optical microscope or a scanning electron microscope is used to measure the thickness of the dielectric layer after making a measurement slice. However, this measurement method is very time-consuming and labor-intensive, and will also damage a large area of the circuit board, making the circuit board scrapped.
因此,如何快速且方便的量测电路板的介电层厚度,便是本领域具有通常知识者值得去思量地。Therefore, how to quickly and conveniently measure the thickness of the dielectric layer of a circuit board is something that people with ordinary knowledge in the art should consider.
发明内容Summary of the invention
本发明之目的在于提供一电路板内介电层厚度之量测方法,该电路板内介电层厚度之量测方法能快速且方便的量测电路板的介电层厚度,且无须破坏电路板。The object of the present invention is to provide a method for measuring the thickness of a dielectric layer in a circuit board. The method for measuring the thickness of a dielectric layer in a circuit board can quickly and conveniently measure the thickness of the dielectric layer of the circuit board without destroying the circuit board.
本发明之电路板内介电层厚度之量测方法包括下列步骤:The method for measuring the thickness of a dielectric layer in a circuit board of the present invention comprises the following steps:
首先,提供一电路板,该电路板包括至少一介电层与至少二线路层,该介电层介于所述线路层之间,且电路板还包括一测试区,于测试区上设有一测试图案及一贯穿孔,测试图案包括至少二金属层,金属层是属于线路层的一部份,且贯穿孔的侧表面包括该介电层的断面及该金属层的断面所组成。First, a circuit board is provided, which includes at least one dielectric layer and at least two circuit layers, the dielectric layer is between the circuit layers, and the circuit board also includes a test area, a test pattern and a through hole are provided on the test area, the test pattern includes at least two metal layers, the metal layer is a part of the circuit layer, and the side surface of the through hole includes a cross section of the dielectric layer and a cross section of the metal layer.
接着,提供一量测装置,量测装置包括一主体部、至少一发光源及一镜头模块,发光源及镜头模块是设置在主体部上。主体部用以深入贯穿孔内。其中,当该主体部深入贯穿孔内时,该发光源发出光线照射介电层及金属层,且镜头模块拍摄该介电层及该金属层,以形成一拍摄图像,借由拍摄图像以得知介电层之厚度。Next, a measuring device is provided, which includes a main body, at least one light source and a lens module, wherein the light source and the lens module are arranged on the main body. The main body is used to penetrate into the through hole. When the main body penetrates into the through hole, the light source emits light to illuminate the dielectric layer and the metal layer, and the lens module photographs the dielectric layer and the metal layer to form a photographed image, and the thickness of the dielectric layer can be obtained by the photographed image.
在上所述之电路板内介电层厚度之量测方法,其中发光源及镜头模块设置在该主体部的同一侧边。In the above-mentioned method for measuring the thickness of the dielectric layer in the circuit board, the light source and the lens module are arranged on the same side of the main body.
在上所述之电路板内介电层厚度之量测方法,其中发光源的数量为多个,这些发光源及该镜头模块设置在该主体部的其中一端,且这些发光源围绕着该镜头模块。In the above-mentioned method for measuring the thickness of the dielectric layer in the circuit board, there are multiple light sources, and these light sources and the lens module are arranged at one end of the main body, and these light sources surround the lens module.
在上所述之电路板内介电层厚度之量测方法,其中该发光源为发光二极管。In the above-mentioned method for measuring the thickness of the dielectric layer in the circuit board, the light source is a light emitting diode.
在上所述之电路板内介电层厚度之量测方法,其中该镜头模块为CCD镜头模块或CMOS镜头模块。In the above-mentioned method for measuring the thickness of the dielectric layer in the circuit board, the lens module is a CCD lens module or a CMOS lens module.
本发明另一目的在于提供一量测装置,该量测装置能快速且方便的量测电路板的介电层厚度,且无须破坏电路板。Another object of the present invention is to provide a measuring device that can quickly and conveniently measure the thickness of a dielectric layer of a circuit board without destroying the circuit board.
本发明之量测装置是应用于量测一电路板的介电层厚度,电路板包括至少一介电层与至少二线路层,介电层是介于所述线路层之间,且电路板还包括一测试区,于测试区上设有一测试图案及一贯穿孔,测试图案包括至少二金属层,该金属层是属于该线路层的一部份,且贯穿孔的侧表面为该介电层的断面及该金属层的断面所组成,量测装置是包括一主体部、至少一发光源及一镜头模块。其中,主体部是用以深入该贯穿孔内,而发光源及镜头模块是设置在该主体部。其中,当该主体部深入该贯穿孔内时,发光源发出光线照射介电层及金属层,且镜头模块用以拍摄该介电层及该金属层,以形成一拍摄图像。The measuring device of the present invention is used to measure the thickness of the dielectric layer of a circuit board. The circuit board includes at least one dielectric layer and at least two circuit layers. The dielectric layer is between the circuit layers. The circuit board also includes a test area. A test pattern and a through hole are provided on the test area. The test pattern includes at least two metal layers. The metal layer is a part of the circuit layer. The side surface of the through hole is composed of the cross section of the dielectric layer and the cross section of the metal layer. The measuring device includes a main body, at least one light source and a lens module. The main body is used to penetrate into the through hole, and the light source and the lens module are arranged in the main body. When the main body penetrates into the through hole, the light source emits light to illuminate the dielectric layer and the metal layer, and the lens module is used to shoot the dielectric layer and the metal layer to form a captured image.
在上所述之量测装置,其中发光源及镜头模块设置在主体部的同一侧边。In the above-mentioned measuring device, the light source and the lens module are arranged on the same side of the main body.
在上所述之量测装置,其中发光源的数量为多个,这些发光源及该镜头模块设置在该主体部的其中一端,且这些发光源围绕着该镜头模块。In the above-mentioned measuring device, there are a plurality of light sources, and the light sources and the lens module are disposed at one end of the main body, and the light sources surround the lens module.
在上所述之量测装置,其中该发光源为发光二极管。In the above-mentioned measuring device, the light source is a light emitting diode.
在上所述之量测装置,其中该镜头模块为CCD镜头模块或CMOS镜头模块。In the above-mentioned measuring device, the lens module is a CCD lens module or a CMOS lens module.
在上所述之量测装置,其中介电层的层数为多个,且金属层的层数为多个。In the above-mentioned measuring device, there are multiple dielectric layers and multiple metal layers.
本发明具有下述优点:仅需于在预先设置的测试区上形成一贯穿孔,即可以将量测装置伸入贯穿孔来拍摄电路板各层的介电层,所需面积较小又快速方便,且无需破坏电路板。The present invention has the following advantages: only a through hole needs to be formed on a pre-set test area, and a measuring device can be inserted into the through hole to photograph the dielectric layers of each layer of the circuit board, which requires a small area and is quick and convenient, and does not need to damage the circuit board.
为让本发明的上述目的、特征和优点更能明显易懂,下文将以实施例并配合所附图式,作详细说明如下。需注意的是,所附图式中的各组件仅是示意,并未按照各组件的实际比例进行绘示。In order to make the above-mentioned purposes, features and advantages of the present invention more clearly understood, the following will be described in detail with reference to the embodiments and the accompanying drawings. It should be noted that the components in the accompanying drawings are only for illustration and are not drawn according to the actual proportions of the components.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1所绘示为本发明之电路板内介电层厚度之量测方法的示意图。FIG. 1 is a schematic diagram showing a method for measuring the thickness of a dielectric layer in a circuit board according to the present invention.
图2A所绘示为电路板10的部分剖面示意图。FIG. 2A is a partial cross-sectional view of the circuit board 10 .
图2B所绘示为本发明之量测装置8的示意图。FIG. 2B is a schematic diagram of a measuring device 8 according to the present invention.
图3A所绘示为量测装置8即将深入贯穿孔10H的示意图。FIG. 3A is a schematic diagram showing the measuring device 8 about to penetrate into the through hole 10H.
图3B所绘示为量测装置8移动到贯穿孔10H内的示意图。FIG. 3B is a schematic diagram showing the measuring device 8 moving into the through hole 10H.
图3C所绘示为拍摄图像8P的示意图。FIG. 3C is a schematic diagram showing a captured image 8P.
图4所绘示为另一实施例之量测装置8'的示意图。FIG. 4 is a schematic diagram of a measuring device 8 ′ according to another embodiment.
具体实施方式Detailed ways
请参阅图1,图1所绘示为本发明之电路板内介电层厚度之量测方法的示意图。电路板内介电层厚度之量测方法是包括下列步骤:Please refer to FIG. 1 , which is a schematic diagram of a method for measuring the thickness of a dielectric layer in a circuit board according to the present invention. The method for measuring the thickness of a dielectric layer in a circuit board includes the following steps:
首先,请参阅步骤S1及图2A,图2A所绘示为电路板10的部分剖面示意图,提供一电路板10,电路板10包括三层介电层12及四层线路层13,但本领域具有通常知识者应可明白实务上电路板10可包括更多层的介电层12及线路层13,或者电路板10也可仅包括一层介电层12与二层线路层13。并且,介电层12是介于二个线路层13之间。First, please refer to step S1 and FIG. 2A , which is a partial cross-sectional view of a circuit board 10 , providing a circuit board 10 , which includes three dielectric layers 12 and four circuit layers 13 , but a person with ordinary knowledge in the art should understand that in practice the circuit board 10 may include more dielectric layers 12 and circuit layers 13 , or the circuit board 10 may include only one dielectric layer 12 and two circuit layers 13 . Moreover, the dielectric layer 12 is between the two circuit layers 13 .
另外,电路板10还包括一测试区10T,于测试区10T上设有一测试图案102及一贯穿孔10H,测试图案102包括至少二金属层1022,金属层1022是属于线路层13的一部份。详细来说,在电路板10的制造过程中,金属层1022与线路层13是同时形成的,所以本实施例的金属层1022的层数与线路层13同样为四层。并且,在本实施例中,贯穿孔10H的侧表面是由介电层12的断面及金属层1022的断面所组成。也就是说,贯穿孔10H的侧表面会显露出介电层12及金属层1022。In addition, the circuit board 10 further includes a test area 10T, on which a test pattern 102 and a through hole 10H are provided, and the test pattern 102 includes at least two metal layers 1022, and the metal layer 1022 is a part of the circuit layer 13. In detail, during the manufacturing process of the circuit board 10, the metal layer 1022 and the circuit layer 13 are formed at the same time, so the number of layers of the metal layer 1022 in this embodiment is the same as that of the circuit layer 13, which is four layers. Moreover, in this embodiment, the side surface of the through hole 10H is composed of the cross section of the dielectric layer 12 and the cross section of the metal layer 1022. In other words, the side surface of the through hole 10H will reveal the dielectric layer 12 and the metal layer 1022.
之后,请参阅步骤S2及图2B,图2B所绘示为本发明之量测装置8的示意图,提供一量测装置8,量测装置8是包括一主体部80、至少一发光源81及一镜头模块82,发光源81例如为发光二极管(LED),镜头模块82例如为CCD镜头模块或CMOS镜头模块。并且,发光源81及镜头模块82是设置在主体部80的同一侧边,而主体部80是用以深入贯穿孔10H内。Afterwards, please refer to step S2 and FIG. 2B , which is a schematic diagram of a measuring device 8 of the present invention. A measuring device 8 is provided, and the measuring device 8 includes a main body 80, at least one light source 81, and a lens module 82. The light source 81 is, for example, a light emitting diode (LED), and the lens module 82 is, for example, a CCD lens module or a CMOS lens module. Moreover, the light source 81 and the lens module 82 are disposed on the same side of the main body 80, and the main body 80 is used to penetrate into the through hole 10H.
之后,请参阅步骤S3及图3A至图3C,图3A所绘示为量测装置8即将深入贯穿孔10H的示意图,图3B所绘示为量测装置8移动到贯穿孔10H内的示意图,图3C所绘示为拍摄图像8P的示意图。当主体部深80入贯穿孔10H内时,发光源81会发出光线照射贯穿孔10H内的介电层12及金属层1022,且镜头模块82同时拍摄介电层12及金属层1022,以形成一拍摄图像8P。在拍摄的过程中,镜头模块82可一次拍摄多层的介电层12及金属层1022之断面而形成拍摄图像8P。或者,镜头模块82也可由上至下分次拍摄不同的介电层12及金属层1022,再以后制的方式将照片组合成拍摄图像8P。Afterwards, please refer to step S3 and Figures 3A to 3C. Figure 3A is a schematic diagram showing that the measuring device 8 is about to penetrate into the through hole 10H, Figure 3B is a schematic diagram showing that the measuring device 8 is moved into the through hole 10H, and Figure 3C is a schematic diagram showing that the captured image 8P is captured. When the main body 80 penetrates deeply into the through hole 10H, the light source 81 emits light to illuminate the dielectric layer 12 and the metal layer 1022 in the through hole 10H, and the lens module 82 simultaneously captures the dielectric layer 12 and the metal layer 1022 to form a captured image 8P. During the capturing process, the lens module 82 can capture the cross-sections of multiple layers of the dielectric layer 12 and the metal layer 1022 at one time to form a captured image 8P. Alternatively, the lens module 82 can also capture different dielectric layers 12 and metal layers 1022 from top to bottom in batches, and then combine the photos into a captured image 8P in a post-production manner.
由于金属层1022的材质为金属,故相对于介电层12会有较高的光反射率,因此利用拍摄图像8P中金属层1022与介电层12光反射的对比差异,所形成的明部与暗部,便可计算出每一层介电层12的厚度。因此,相较于传统量测电路板的介电层厚度的方式,本发明之电路板内介电层厚度之量测方法能快速且方便的量测电路板10的介电层厚度,且无需破坏电路板10。Since the metal layer 1022 is made of metal, it has a higher light reflectivity than the dielectric layer 12. Therefore, by using the contrast difference of the light reflection of the metal layer 1022 and the dielectric layer 12 in the captured image 8P, the thickness of each dielectric layer 12 can be calculated. Therefore, compared with the traditional method of measuring the thickness of the dielectric layer of the circuit board, the method of measuring the thickness of the dielectric layer in the circuit board of the present invention can quickly and conveniently measure the thickness of the dielectric layer of the circuit board 10 without destroying the circuit board 10.
请参阅图4,图4所绘示为另一实施例之量测装置8'的示意图。发光源在图4所绘示的实施例中,量测装置8'的发光源81'的数量为多个,发光源81'及镜头模块82'皆是设置在主体部80'的其中一端,且这些发光源81'是围绕着镜头模块82'。在拍摄的过程中,镜头模块82'是一层一层的对介电层12进行拍摄,之后以后制的方式组合成拍摄图像8P。Please refer to FIG. 4, which is a schematic diagram of another embodiment of a measuring device 8'. Light Source In the embodiment shown in FIG. 4, the number of light sources 81' of the measuring device 8' is multiple, and the light sources 81' and the lens module 82' are both set at one end of the main body 80', and these light sources 81' surround the lens module 82'. During the shooting process, the lens module 82' shoots the dielectric layer 12 layer by layer, and then combines them into a shot image 8P in a post-production manner.
综上,本发明是仅需于在预先设置的测试区10T上形成一贯穿孔10H,即可以将量测装置8或量测装置8'伸入贯穿孔10H来拍摄电路板各层的介电层12厚度,所需面积较小又快速方便。因此,相较于传统量测电路板的介电层厚度的方式,本发明之电路板内介电层厚度之量测方法能快速且方便的量测电路板10的介电层12厚度,且无需破坏电路板。In summary, the present invention only needs to form a through hole 10H on the pre-set test area 10T, that is, the measuring device 8 or the measuring device 8' can be inserted into the through hole 10H to photograph the thickness of the dielectric layer 12 of each layer of the circuit board, which requires a small area and is fast and convenient. Therefore, compared with the traditional method of measuring the thickness of the dielectric layer of the circuit board, the measuring method of the dielectric layer thickness of the circuit board of the present invention can quickly and conveniently measure the thickness of the dielectric layer 12 of the circuit board 10 without destroying the circuit board.
上述实施例仅是为了方便说明而举例,虽遭所属技术领域的技术人员任意进行修改,均不会脱离如权利要求书中所欲保护的范围。The above embodiments are merely examples for the convenience of explanation. Although any modifications are made by those skilled in the art, they will not deviate from the scope of protection as set forth in the claims.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110047339.7ACN114763986B (en) | 2021-01-14 | 2021-01-14 | Device and method for measuring thickness of dielectric layer in circuit board |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110047339.7ACN114763986B (en) | 2021-01-14 | 2021-01-14 | Device and method for measuring thickness of dielectric layer in circuit board |
| Publication Number | Publication Date |
|---|---|
| CN114763986A CN114763986A (en) | 2022-07-19 |
| CN114763986Btrue CN114763986B (en) | 2024-04-19 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110047339.7AActiveCN114763986B (en) | 2021-01-14 | 2021-01-14 | Device and method for measuring thickness of dielectric layer in circuit board |
| Country | Link |
|---|---|
| CN (1) | CN114763986B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081421A (en)* | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
| US5702956A (en)* | 1996-08-26 | 1997-12-30 | Taiwan Semiconductor Manufactoring, Company Ltd | Test site and a method of monitoring via etch depths for semiconductor devices |
| JP2000049204A (en)* | 1998-06-26 | 2000-02-18 | Siemens Ag | Method and apparatus for optically measuring the thickness of a dielectric layer in a semiconductor device |
| TWM592510U (en)* | 2019-08-22 | 2020-03-21 | 儀銳實業有限公司 | Super macro lens measuring device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060007020A (en)* | 2003-04-17 | 2006-01-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Method and apparatus for determining dielectric thickness and method for manufacturing electric element |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081421A (en)* | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
| US5702956A (en)* | 1996-08-26 | 1997-12-30 | Taiwan Semiconductor Manufactoring, Company Ltd | Test site and a method of monitoring via etch depths for semiconductor devices |
| JP2000049204A (en)* | 1998-06-26 | 2000-02-18 | Siemens Ag | Method and apparatus for optically measuring the thickness of a dielectric layer in a semiconductor device |
| TWM592510U (en)* | 2019-08-22 | 2020-03-21 | 儀銳實業有限公司 | Super macro lens measuring device |
| Publication number | Publication date |
|---|---|
| CN114763986A (en) | 2022-07-19 |
| Publication | Publication Date | Title |
|---|---|---|
| JP6737964B2 (en) | Defect inspection device and defect inspection method for ceramics body | |
| JP5427128B2 (en) | Substrate inspection apparatus and inspection method | |
| JP5500414B2 (en) | Inspection method and inspection apparatus for detecting minute cracks in wafer | |
| TW200540411A (en) | Apparatus and method for detecting defect and apparatus and method for extracting wire area | |
| US20110310229A1 (en) | Profile measuring device, profile measuring method, and method of manufacturing semiconductor package | |
| CN114763986B (en) | Device and method for measuring thickness of dielectric layer in circuit board | |
| KR20180136448A (en) | A light emitting element accommodating member, an array member, and a light emitting device | |
| CN109005662A (en) | Chip mounting system and chip mounting method | |
| JP2000121338A (en) | Electronic component inspecting device | |
| TWI775274B (en) | Device and method for measuring thickness of dielectric layer in circuit board | |
| JP2015161622A (en) | Appearance inspection apparatus, appearance inspection method, and program | |
| JP5215545B2 (en) | Inspection method of electronic component mounting status | |
| TWI879410B (en) | Inspection device and inspection method | |
| CN106611719B (en) | Flux coating state inspection method for flip chip | |
| WO2018033898A1 (en) | Method for inspecting ball grid array-type semiconductor chip package | |
| JP2000269165A (en) | Laminated sheet having diving marks, and apparatus for detecting the dicing marks of the laminated sheet | |
| CN104111160A (en) | Light emitting diode detection system and light emitting diode detection method | |
| JP4218283B2 (en) | Target projection type three-dimensional shape measuring method and apparatus | |
| TWI805507B (en) | Defect detection and removal apparatus and method | |
| TW202218102A (en) | Manufacturing method of a display apparatus | |
| JPH1090191A (en) | Soldering inspection equipment | |
| JP6324869B2 (en) | Wire peeling inspection method and wire peeling inspection apparatus | |
| KR101566391B1 (en) | Smudge detecting method in lens image | |
| KR100558449B1 (en) | Appearance sorting device for detecting edge crack of chip parts | |
| KR101497523B1 (en) | Apparaus and method for lens inspecting in light emitting module |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |