CN114613852A - Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material - Google Patents
Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal materialDownload PDFInfo
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- CN114613852A CN114613852ACN202210240601.4ACN202210240601ACN114613852ACN 114613852 ACN114613852 ACN 114613852ACN 202210240601 ACN202210240601 ACN 202210240601ACN 114613852 ACN114613852 ACN 114613852A
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- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明属于电子器件的技术领域，具体涉及一种基于立方氮化硼 (c-BN)单晶材料的肖特基-PN结二极管。The invention belongs to the technical field of electronic devices, in particular to a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material.
背景技术Background technique
肖特基二极管具有较小的开启电压和较小的反向击穿电压，而对于PN结二极管，却具有较高的开启电压和较大的击穿电压。为了结合它们的特性，在2009年，Makino提出了肖特基-PN结二极管 (SPND)。目前，传统的硅基二极管受限于自身热导性差，击穿电压低等物理特性，已经难以满足更高功率电子器件需求。人们逐渐将目光转向具有高热导率、高击穿场强、高电子饱和速率的宽禁带半导体材料。Schottky diodes have smaller turn-on voltages and smaller reverse breakdown voltages, while PN junction diodes have higher turn-on voltages and larger breakdown voltages. To combine their properties, in 2009 Makino proposed Schottky-PN junction diodes (SPNDs). At present, traditional silicon-based diodes are limited by their physical properties such as poor thermal conductivity and low breakdown voltage, and have been unable to meet the needs of higher power electronic devices. People gradually turn their attention to wide-bandgap semiconductor materials with high thermal conductivity, high breakdown field strength, and high electron saturation rate.
发明内容SUMMARY OF THE INVENTION
鉴于现有技术的缺陷，本发明提供了一种基于立方氮化硼(c-BN) 单晶材料的肖特基-PN结二极管。In view of the defects of the prior art, the present invention provides a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material.
为了实现上述目的，本发明采用的技术方案如下：In order to achieve the above object, the technical scheme adopted in the present invention is as follows:
一种基于立方氮化硼(c-BN)单晶材料的肖特基-PN结二极管，所述肖特基-PN结二极管包括c-BN晶体、ITO薄膜和Au电极。其中，在所述c-BN晶体的两侧分别镀上ITO薄膜和Au电极，再将Au与In焊接，作为外接导线。A Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, the Schottky-PN junction diode includes a c-BN crystal, an ITO film and an Au electrode. Wherein, an ITO film and an Au electrode are respectively plated on both sides of the c-BN crystal, and then Au and In are welded to serve as an external lead.
需要说明的是，所述c-BN晶体在温度为1800℃、压强为6GPa 的高温高压条件下合成所得。It should be noted that the c-BN crystal was synthesized under the conditions of high temperature and high pressure with a temperature of 1800° C. and a pressure of 6 GPa.
需要说明的是，所述c-BN晶体最大宽度处约1.5mm。It should be noted that the maximum width of the c-BN crystal is about 1.5 mm.
需要说明的是，所述肖特基-PN结二极管的理想因子为25.15，开启电压为5V。It should be noted that the ideality factor of the Schottky-PN junction diode is 25.15, and the turn-on voltage is 5V.
需要说明的是，所述c-BN晶体与Au电极之间形成了肖特基接触，所述c-BN晶体与ITO薄膜之间形成了PN结接触。It should be noted that a Schottky contact is formed between the c-BN crystal and the Au electrode, and a PN junction contact is formed between the c-BN crystal and the ITO film.
本发明还提供一种基于立方氮化硼(c-BN)单晶材料的肖特基 -PN结二极管的应用，可应用于功率二极管。The invention also provides the application of a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, which can be applied to a power diode.
附图说明Description of drawings
图1(a)Au/c-BN/Au器件的I-V特性；图1(b)Au/c-BN/ITO肖特基 -PN结二极管的I-V特性。Fig. 1(a) I-V characteristics of Au/c-BN/Au device; Fig. 1(b) I-V characteristics of Au/c-BN/ITO Schottky-PN junction diode.
具体实施方式Detailed ways
以下将结合附图对本发明作进一步的描述，需要说明的是，本实施例以本技术方案为前提，给出了详细的实施方式和具体的操作过程，但本发明的保护范围并不限于本实施例。The present invention will be further described below in conjunction with the accompanying drawings. It should be noted that the present embodiment takes the technical solution as the premise, and provides a detailed implementation manner and a specific operation process, but the protection scope of the present invention is not limited to the present invention. Example.
本发明为一种基于立方氮化硼(c-BN)单晶材料的肖特基-PN结二极管，所述肖特基-PN结二极管包括c-BN晶体、ITO薄膜和Au 电极。其中，在所述c-BN晶体的两侧分别镀上ITO薄膜和Au电极，再将Au与In焊接，作为外接导线。The present invention is a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, and the Schottky-PN junction diode includes c-BN crystal, ITO thin film and Au electrode. Wherein, an ITO film and an Au electrode are respectively plated on both sides of the c-BN crystal, and then Au and In are welded to serve as an external lead.
进一步地，本发明所述c-BN晶体在温度为1800℃、压强为6GPa 的高温高压条件下合成所得。Further, the c-BN crystal of the present invention is synthesized under the conditions of high temperature and high pressure with a temperature of 1800° C. and a pressure of 6 GPa.
进一步地，本发明所述c-BN晶体最大宽度处约1.5mm。Further, the maximum width of the c-BN crystal of the present invention is about 1.5 mm.
进一步地，本发明所述肖特基-PN结二极管的理想因子为25.15，开启电压为5V。Further, the ideality factor of the Schottky-PN junction diode of the present invention is 25.15, and the turn-on voltage is 5V.
进一步地，本发明所述c-BN晶体与Au电极之间形成了肖特基接触，所述c-BN晶体与ITO薄膜之间形成了PN结接触。Further, a Schottky contact is formed between the c-BN crystal of the present invention and the Au electrode, and a PN junction contact is formed between the c-BN crystal and the ITO film.
本发明还提供一种基于立方氮化硼(c-BN)单晶材料的肖特基 -PN结二极管的应用，可应用于功率二极管。The invention also provides the application of a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, which can be applied to a power diode.
实施例Example
本发明的二极管在黑暗条件下的I-V特性曲线如图1(a)所示，从图中，可以看出Au作为BN的电极为肖特基接触，在判断了电极接触类型后，进一步地，本发明可以利用物理掩膜的方法，c-BN晶体表面分别镀上ITO薄膜和Au电极，并将Au与In焊接在一起，作为外接导线。该二极管在黑暗条件下的I-V特性曲线如图1(b)所示，可知I-V曲线具有明显的整流特征，整流系数达到102左右，在20V偏压下的电流约为0.286A/cm2，二极管正向阈值电压或开启电压为5V。该二极管的正向阈值电压或开启电压较大，主要归因于c-BN晶体富含Na、K，Li等元素，使其c-BN晶体的非故意掺杂的浓度较高。另一方面就是由于c-BN晶体与金属Au接触产生的能级差形成的势垒高度以及c-BN/ITO形成PN结势垒高度较高。The IV characteristic curve of the diode of the present invention under dark conditions is shown in Figure 1(a). From the figure, it can be seen that the electrode of Au as BN is a Schottky contact. After judging the electrode contact type, further, In the present invention, the method of physical mask can be used, the surface of c-BN crystal is plated with ITO film and Au electrode respectively, and Au and In are welded together as external wires. The IV characteristic curve of the diode under dark conditions is shown in Figure 1(b). It can be seen that the IV curve has obvious rectification characteristics, the rectification coefficient reaches about 102 , and the current under 20V bias is about 0.286A/cm2 . The diode forward threshold voltage or turn-on voltage is 5V. The large forward threshold voltage or turn-on voltage of the diode is mainly due to the fact that c-BN crystal is rich in elements such as Na, K, and Li, which makes the unintentional doping concentration of c-BN crystal high. On the other hand, the height of the barrier formed by the energy level difference between the c-BN crystal and the metal Au and the height of the PN junction formed by c-BN/ITO are higher.
对于本领域的技术人员来说，可以根据以上的技术方案和构思，给出各种相应的改变，而所有的这些改变，都应该包括在本发明权利要求的保护范围之内。For those skilled in the art, various corresponding changes can be given according to the above technical solutions and ideas, and all these changes should be included within the protection scope of the claims of the present invention.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118198148A (en)* | 2024-03-15 | 2024-06-14 | 中山大学 | Schottky diode based on cubic boron nitride (c-BN) single crystal material |
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| US20130162333A1 (en)* | 2011-12-23 | 2013-06-27 | Nokia Corporation | Apparatus and associated methods |
| US20180136319A1 (en)* | 2015-04-22 | 2018-05-17 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US20200388551A1 (en)* | 2017-12-08 | 2020-12-10 | Sekisui Chemical Co., Ltd. | Laminate and electronic device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195671A (en)* | 1998-12-24 | 2000-07-14 | Sony Corp | Image display device |
| US20130162333A1 (en)* | 2011-12-23 | 2013-06-27 | Nokia Corporation | Apparatus and associated methods |
| US20180136319A1 (en)* | 2015-04-22 | 2018-05-17 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US20200388551A1 (en)* | 2017-12-08 | 2020-12-10 | Sekisui Chemical Co., Ltd. | Laminate and electronic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118198148A (en)* | 2024-03-15 | 2024-06-14 | 中山大学 | Schottky diode based on cubic boron nitride (c-BN) single crystal material |
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