CN114613663A - Chip and preparation method thereof - Google Patents

Abstract

The invention provides a chip and a preparation method thereof, wherein the preparation method comprises the following steps: s1, cutting the silicon carbide rod into a plurality of silicon carbide substrate slices, wherein the thickness of each silicon carbide substrate slice is smaller than a first set value; s2, arranging an auxiliary layer on at least one side of the silicon carbide substrate slice to obtain a composite slice, wherein the total thickness of the composite slice is greater than a second set value, and the second set value is greater than the first set value; s3, processing the composite sheet to obtain a chip; and S4, removing the auxiliary layer on the chip. According to the preparation method of the chip, the silicon carbide crystal ingot is cut into the plurality of thin substrate sheets, the auxiliary layer is arranged on each thin substrate sheet, the composite sheet is obtained, the thin substrate sheets are prevented from being broken in the processing process, the auxiliary layer is removed after the composite sheet is processed to obtain the silicon carbide chip, and the silicon carbide chip with the thinner thickness is obtained, so that the manufacturing cost of the chip is effectively reduced.

Description

Translated fromChinese

芯片及其制备方法Chip and preparation method thereof

技术领域technical field

本发明实施例涉及芯片制造技术领域，尤其涉及一种芯片的制备方法及采用该制备方法制备的芯片。The embodiments of the present invention relate to the technical field of chip manufacturing, and in particular, to a method for preparing a chip and a chip prepared by the method.

背景技术Background technique

SiC(碳化硅)是一种合适的用于工业化生产功率半导体器件的衬底材料。在工艺问题解决之后，价格成为了影响SiC器件普及的重要因素。其中，SiC片的成本占据了制造成本的很大一部分。SiC (Silicon Carbide) is a suitable substrate material for the industrial production of power semiconductor devices. After the process problem is solved, price has become an important factor affecting the popularity of SiC devices. Among them, the cost of SiC sheet occupies a large part of the manufacturing cost.

主要原因在于SiC晶锭生长速度很慢，一周大概生长5cm，所以切割每一片SiC的厚度，直接影响SiC芯片成本。如图1所示，现有的SiC晶锭1在满足芯片制造工艺的前提下，所能切割出的SiC片2的厚度较厚，增加了芯片的制造成本。The main reason is that the growth rate of the SiC ingot is very slow, about 5cm a week, so the thickness of each piece of SiC cut directly affects the cost of the SiC chip. As shown in FIG. 1 , on the premise that the existingSiC crystal ingot 1 satisfies the chip manufacturing process, the thickness of theSiC sheet 2 that can be cut is relatively thick, which increases the manufacturing cost of the chip.

发明内容SUMMARY OF THE INVENTION

本发明实施例提供一种芯片的制备方法，能够有效降低芯片的制造成本。The embodiment of the present invention provides a method for manufacturing a chip, which can effectively reduce the manufacturing cost of the chip.

为了解决上述技术问题，本发明是这样实现的：In order to solve the above-mentioned technical problems, the present invention is achieved in this way:

第一方面，本发明实施例提供了一种芯片的制备方法，包括以下步骤：In a first aspect, an embodiment of the present invention provides a method for preparing a chip, including the following steps:

S1、将碳化硅棒切割为多个碳化硅衬底片，每个所述碳化硅衬底片的厚度小于第一设定值；S1, cutting the silicon carbide rod into a plurality of silicon carbide substrate sheets, and the thickness of each of the silicon carbide substrate sheets is less than a first set value;

S2、在所述碳化硅衬底片的至少一侧设置辅助层，得到复合片，所述复合片的总厚度大于第二设定值，所述第二设定值大于所述第一设定值；S2. Provide an auxiliary layer on at least one side of the silicon carbide substrate sheet to obtain a composite sheet, the total thickness of the composite sheet is greater than a second set value, and the second set value is greater than the first set value ;

S3、对所述复合片进行加工，得到芯片；S3, processing the composite sheet to obtain a chip;

S4、去除所述芯片上的所述辅助层。S4, removing the auxiliary layer on the chip.

进一步地，所述第一设定值小于200μm。Further, the first set value is less than 200 μm.

进一步地，所述第二设定值为200μm-350μm。Further, the second set value is 200 μm-350 μm.

进一步地，步骤S2包括：Further, step S2 includes:

S21、将所述辅助层键合在所述碳化硅衬底片的一侧上，得到所述复合片；S21, bonding the auxiliary layer on one side of the silicon carbide substrate sheet to obtain the composite sheet;

S22、对所述复合片进行研磨以调整其厚度、平整度和粗糙度。S22, grinding the composite sheet to adjust its thickness, flatness and roughness.

进一步地，所述辅助层为多晶碳化硅层或氧化铝层。Further, the auxiliary layer is a polycrystalline silicon carbide layer or an aluminum oxide layer.

进一步地，步骤S2包括：Further, step S2 includes:

S21’、将辅料混合后，在所述碳化硅衬底片的碳面进行流延成型；S21', after mixing the auxiliary materials, tape casting is carried out on the carbon surface of the silicon carbide substrate sheet;

S22’、对所述碳化硅衬底片进行烧结，在所述碳化硅衬底片的碳面形成所述辅助层，得到所述复合片；S22', sintering the silicon carbide substrate sheet, and forming the auxiliary layer on the carbon surface of the silicon carbide substrate sheet to obtain the composite sheet;

S23’、对所述复合片进行研磨以调整其厚度、平整度和粗糙度。S23', grinding the composite sheet to adjust its thickness, flatness and roughness.

进一步地，所述辅料为：以碳化硅粉末或氧化铝粉末为骨料，加黏土和聚乙烯醇进行混合得到的混合料。Further, the auxiliary material is a mixture obtained by mixing silicon carbide powder or alumina powder as aggregate, adding clay and polyvinyl alcohol.

进一步地，步骤S2包括：Further, step S2 includes:

S21”、在所述碳化硅衬底片的碳面设置粘接剂；S21", setting an adhesive on the carbon surface of the silicon carbide substrate sheet;

S22”、将所述辅助层粘结在所述碳化硅衬底片的碳面上；S22", bonding the auxiliary layer on the carbon surface of the silicon carbide substrate sheet;

S23”、对所述碳化硅衬底片进行烧结，得到所述复合片；S23", sintering the silicon carbide substrate sheet to obtain the composite sheet;

S24”、对所述复合片进行研磨以调整其厚度、平整度和粗糙度。S24", grinding the composite sheet to adjust its thickness, flatness and roughness.

进一步地，所述粘接剂为：以碳化硅粉末或氧化铝粉末为骨料，加黏土和聚乙烯醇进行混合得到的混合料，所述辅助层为多晶碳化硅层或氧化铝层。Further, the binder is a mixture obtained by using silicon carbide powder or aluminum oxide powder as aggregate, adding clay and polyvinyl alcohol and mixing, and the auxiliary layer is a polycrystalline silicon carbide layer or an aluminum oxide layer.

第二方面，本发明实施例提供了一种芯片，所述芯片由上述实施例中所述的制备方法制备而成。In a second aspect, an embodiment of the present invention provides a chip prepared by the preparation method described in the above embodiment.

在本发明实施例中，通过将碳化硅晶锭切割成多个薄衬底片，并在每个薄衬底片上设置辅助层，得到复合片，防止薄衬底片在加工过程破碎，最后再将复合片加工得到碳化硅芯片后，去除辅助层，得到厚度较薄的碳化硅芯片，有效降低芯片制造的成本。In the embodiment of the present invention, the silicon carbide ingot is cut into a plurality of thin substrate sheets, and an auxiliary layer is arranged on each thin substrate sheet to obtain a composite sheet, so as to prevent the thin substrate sheet from being broken during processing, and finally the composite sheet is After the wafer is processed to obtain a silicon carbide chip, the auxiliary layer is removed to obtain a silicon carbide chip with a thinner thickness, which effectively reduces the cost of chip manufacturing.

附图说明Description of drawings

通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are for the purpose of illustrating preferred embodiments only and are not to be considered limiting of the invention. Also, the same components are denoted by the same reference numerals throughout the drawings. In the attached image:

图1为现有技术的芯片的制备方法中的碳化硅棒的切割示意图；Fig. 1 is the cutting schematic diagram of the silicon carbide rod in the preparation method of the chip of the prior art;

图2为本发明实施例的芯片的制备方法的工艺流程图；2 is a process flow diagram of a method for preparing a chip according to an embodiment of the present invention;

图3为本发明实施例的芯片的制备方法的流程框图。FIG. 3 is a flowchart of a method for fabricating a chip according to an embodiment of the present invention.

附图标记：Reference number:

碳化硅棒10；Silicon carbide rod 10;

碳化硅衬底片20；Siliconcarbide substrate sheet 20;

辅助层30；auxiliary layer 30;

芯片40。chip 40.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

下面根据附图并结合具体实施例描述本发明实施例的芯片的制备方法。The following describes a method for preparing a chip according to an embodiment of the present invention according to the accompanying drawings and in conjunction with specific embodiments.

根据本发明实施例的芯片的制备方法，包括以下步骤：The preparation method of the chip according to the embodiment of the present invention includes the following steps:

S1、将碳化硅棒切割为多个碳化硅衬底片，每个碳化硅衬底片的厚度小于第一设定值；S1, cutting the silicon carbide rod into a plurality of silicon carbide substrate sheets, and the thickness of each silicon carbide substrate sheet is less than the first set value;

S2、在碳化硅衬底片的至少一侧设置辅助层，得到复合片，复合片的总厚度大于第二设定值，第二设定值大于第一设定值；S2, providing an auxiliary layer on at least one side of the silicon carbide substrate sheet to obtain a composite sheet, the total thickness of the composite sheet is greater than the second set value, and the second set value is greater than the first set value;

S3、对复合片进行加工，得到芯片；S3, processing the composite sheet to obtain a chip;

S4、去除芯片上的辅助层。S4, remove the auxiliary layer on the chip.

具体地，参见图2和图3，在本发明实施例的芯片的制备方法中，首先，可以将碳化硅棒10切割为多个碳化硅衬底片20，该碳化硅棒10为碳化硅(SiC)晶锭，并且该碳化硅晶锭为单晶碳化硅。每个碳化硅衬底片20的厚度可以小于第一设定值，以使同一个碳化硅棒10可以切割出尽可能薄、尽可能多的衬底片。因为SiC晶锭生长速度很慢，一周大概生长5cm，所以切割每一片的厚度越薄，制备出的SiC芯片40成本越低。Specifically, referring to FIG. 2 and FIG. 3 , in the preparation method of the chip according to the embodiment of the present invention, first, thesilicon carbide rod 10 may be cut into a plurality of siliconcarbide substrate sheets 20 , and thesilicon carbide rod 10 is a silicon carbide (SiC) ) crystal ingot, and the silicon carbide crystal ingot is single crystal silicon carbide. The thickness of each siliconcarbide substrate sheet 20 may be smaller than the first set value, so that the samesilicon carbide rod 10 can cut out as many substrate sheets as possible as thin as possible. Because the growth rate of the SiC ingot is very slow, about 5 cm per week, the thinner the thickness of each slice, the lower the cost of theSiC chip 40 to be prepared.

然后，在碳化硅衬底片20的至少一侧上设置辅助层30，碳化硅衬底片20的一侧可以作为外延片(EPI)，辅助层30可以与薄的碳化硅衬底片20复合得到复合片，复合片的总厚度大于第二设定值，并且第二设定值大于第一设定值。即复合之后的碳化硅衬底片20厚度得到增加，可以有效防止对切割之后的薄的碳化硅衬底片20直接加工而造成在加工过程破碎。Then, anauxiliary layer 30 is arranged on at least one side of the siliconcarbide substrate sheet 20, one side of the siliconcarbide substrate sheet 20 can be used as an epitaxial wafer (EPI), and theauxiliary layer 30 can be combined with the thin siliconcarbide substrate sheet 20 to obtain a composite sheet , the total thickness of the composite sheet is greater than the second set value, and the second set value is greater than the first set value. That is, the thickness of the siliconcarbide substrate sheet 20 after compounding is increased, which can effectively prevent the thin siliconcarbide substrate sheet 20 after being cut from being directly processed and broken during processing.

接着，可以对复合片进行MOSFET(MOSFET：Metal-Oxide-Semiconductor Field-Effect Transistor，金氧半场效晶体管)工艺加工处理，得到芯片40。最后，可以将芯片40上的辅助层30去除，得到的芯片40厚度较薄，且整体结构完整，不会破损。通过利用本发明的制备方法可以在同一个碳化硅棒10上切割出更多更薄的碳化硅衬底片20，从而制备出更多更薄的芯片40，有效降低芯片40的制备成本。Next, a MOSFET (MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor) process may be performed on the composite sheet to obtain thechip 40 . Finally, theauxiliary layer 30 on thechip 40 can be removed, and the obtainedchip 40 has a thin thickness, and the overall structure is complete and will not be damaged. By using the preparation method of the present invention, more and thinner siliconcarbide substrate sheets 20 can be cut from the samesilicon carbide rod 10 , thereby preparing more andthinner chips 40 , and effectively reducing the manufacturing cost of thechips 40 .

其中需要说明的是，在本申请中，碳化硅棒10可以是棒状结构，也可以是其他可以切割出碳化硅衬底片20的碳化硅晶锭，将碳化硅棒10切割成碳化硅衬底片20的结构和工作原理，以及对于碳化硅衬底片20的切割厚度的控制方法，这对于本领域技术人员而言是可以理解并且容易实现的，因此不再详细描述。It should be noted that in the present application, thesilicon carbide rod 10 may be a rod-shaped structure, or may be other silicon carbide ingots that can cut the siliconcarbide substrate sheet 20, and thesilicon carbide rod 10 is cut into the siliconcarbide substrate sheet 20. The structure and working principle of the SiC substrate, as well as the control method for the cutting thickness of the siliconcarbide substrate sheet 20, are understandable to those skilled in the art and can be easily realized, so they will not be described in detail.

由此，在本发明实施例中，通过将碳化硅棒10切割成多个薄碳化硅衬底片20，使得同一个碳化硅棒10可以切割出更多、更薄的碳化硅衬底片20，再在每个薄碳化硅衬底片20上设置辅助层30，得到复合片，增加碳化硅衬底片20的厚度，防止薄的碳化硅衬底片20在加工过程破碎，最后再将复合片加工得到碳化硅芯片40后，去除辅助层30，得到厚度较薄的碳化硅芯片40，该方法简单可行，可以有效降低芯片40制造的成本。Therefore, in the embodiment of the present invention, by cutting thesilicon carbide rod 10 into a plurality of thin siliconcarbide substrate sheets 20, more and thinner siliconcarbide substrate sheets 20 can be cut from the samesilicon carbide rod 10, and then Anauxiliary layer 30 is arranged on each thin siliconcarbide substrate sheet 20 to obtain a composite sheet, and the thickness of the siliconcarbide substrate sheet 20 is increased to prevent the thin siliconcarbide substrate sheet 20 from being broken during processing, and finally the composite sheet is processed to obtain silicon carbide After thechip 40 is formed, theauxiliary layer 30 is removed to obtain asilicon carbide chip 40 with a thinner thickness. This method is simple and feasible, and can effectively reduce the cost of manufacturing thechip 40 .

根据本发明的一个实施例，第一设定值小于200μm。第二设定值为200μm-350μm。According to an embodiment of the present invention, the first set value is less than 200 μm. The second set value is 200 μm-350 μm.

也就是说，如图2所示，从单晶碳化硅棒10切割的碳化硅衬底片20的厚度可以小于200μm，优选碳化硅衬底片20的厚度为100μm或者更薄，保证可以从碳化硅棒10上切割出尽可能多的碳化硅衬底片20，从而可以从同一碳化硅棒10上制备出更多的芯片40，降低芯片40的制造成本。切割出的碳化硅衬底片20上可以复合有辅助层30，碳化硅衬底片20和辅助层30的总厚度可以为200μm-350μm。That is to say, as shown in FIG. 2 , the thickness of the siliconcarbide substrate sheet 20 cut from the single crystalsilicon carbide rod 10 may be less than 200 μm, preferably the thickness of the siliconcarbide substrate sheet 20 is 100 μm or thinner, to ensure that the thickness of the siliconcarbide substrate sheet 20 can be cut from the silicon carbide rod As many siliconcarbide substrate sheets 20 as possible are cut out from the samesilicon carbide rod 10 , so thatmore chips 40 can be prepared from the samesilicon carbide rod 10 , thereby reducing the manufacturing cost of thechips 40 . The cut siliconcarbide substrate sheet 20 may be compounded with anauxiliary layer 30 , and the total thickness of the siliconcarbide substrate sheet 20 and theauxiliary layer 30 may be 200 μm-350 μm.

需要说明的是，现有的碳化硅衬底片20在平整度TTV(total thicknessvariation)，粗糙度等值，以便能达到芯片40制造要求的前提下，碳化硅衬底片20经标准研磨后的标准厚度为350μm，若碳化硅衬底的厚度小于350μm，容易造成碳化硅衬底在后续工艺制造过程中破损。It should be noted that the existing siliconcarbide substrate sheet 20 has a standard thickness of the siliconcarbide substrate sheet 20 after standard grinding under the premise that the flatness TTV (total thickness variation), the roughness and the like can meet the manufacturing requirements of thechip 40 is 350 μm, if the thickness of the silicon carbide substrate is less than 350 μm, it is easy to cause the silicon carbide substrate to be damaged in the subsequent manufacturing process.

本申请通过对切割出的更薄的碳化硅衬底上进行增厚处理，保证碳化硅衬底片20和辅助层30的总厚度可以达到后续芯片40制造工艺的要求，最后在制备出的芯片40上通过刻蚀等方法去除辅助层30，使得制备出的芯片40厚度更薄，保证一个碳化硅晶锭可以制备出更多的芯片40，从而有效降低芯片40制造成本。In the present application, by performing thickening treatment on the cut out thinner silicon carbide substrate, it is ensured that the total thickness of the siliconcarbide substrate sheet 20 and theauxiliary layer 30 can meet the requirements of thesubsequent chip 40 manufacturing process. Theauxiliary layer 30 is removed by etching and other methods, so that the thickness of theprepared chips 40 is thinner, ensuring thatmore chips 40 can be prepared from one silicon carbide ingot, thereby effectively reducing the manufacturing cost of thechips 40 .

下面对在碳化硅衬底片20设置辅助层30的方法进行详细描述。The method for disposing theauxiliary layer 30 on the siliconcarbide substrate sheet 20 will be described in detail below.

在本发明的一些具体实施方式中，步骤S2包括：In some specific embodiments of the present invention, step S2 includes:

S21、将辅助层30键合在碳化硅衬底片20的一侧上，得到复合片；S21, bonding theauxiliary layer 30 on one side of the siliconcarbide substrate sheet 20 to obtain a composite sheet;

S22、对复合片进行研磨以调整其厚度、平整度和粗糙度。S22, grinding the composite sheet to adjust its thickness, flatness and roughness.

也就是说，在本发明的芯片的制备方法中，辅助层30可以键合在碳化硅衬底片20上，得到复合片，然后通过对复合片进行研磨以调整其厚度、平整度和粗糙度，保证复合片(碳化硅衬底片20和辅助层30的总厚度为350μm)。That is to say, in the chip preparation method of the present invention, theauxiliary layer 30 can be bonded on the siliconcarbide substrate sheet 20 to obtain a composite sheet, and then the thickness, flatness and roughness of the composite sheet can be adjusted by grinding the composite sheet, The composite sheet is guaranteed (the total thickness of the siliconcarbide substrate sheet 20 and theauxiliary layer 30 is 350 μm).

可选地，在本申请中，辅助层30可以采用多晶碳化硅层或氧化铝层。单晶SiC通过Bonding(绑定)的方式来增加碳化硅棒10所切割碳化硅衬底片20的个数。通过利用标准Bonding方式，将耐高温材料Bonding在单晶SiC上，然后标准研磨，调整复合片厚度(350um，现在SiC衬底片的标准厚度)，平整度TTV(total thickness variation)，粗糙度等值，以便能达到芯片40制造要求，防止碳化硅衬底片20在制造过程中破损。Optionally, in the present application, theauxiliary layer 30 may be a polycrystalline silicon carbide layer or an aluminum oxide layer. The single crystal SiC increases the number of siliconcarbide substrate sheets 20 cut by thesilicon carbide rod 10 by means of Bonding. By using the standard bonding method, the high temperature resistant material is bonded on the single crystal SiC, and then the standard grinding is used to adjust the thickness of the composite sheet (350um, the standard thickness of the current SiC substrate sheet), flatness TTV (total thickness variation), roughness and other values , so as to meet the manufacturing requirements of thechip 40 and prevent thesilicon carbide substrate 20 from being damaged during the manufacturing process.

同时，在碳化硅衬底片20上Bonding的辅助层30可以为相同或者不同的材料，例如：多晶碳化硅，氧化铝等耐高温材料，保证合成材料(复合片)可以承受高于1800℃的温度的半导体工艺。通过采用本申请的制备方法，可以在同一个碳化硅棒10上切割出更多更薄的碳化硅衬底片20，从而制备出更多更薄的芯片40，有效降低芯片40的制备成本。当然，对于本领域技术人员来说，Bonding工艺是可以理解并且能够实现的，在本申请中不再详细赘述。At the same time, theauxiliary layer 30 for Bonding on the siliconcarbide substrate sheet 20 can be made of the same or different materials, such as polycrystalline silicon carbide, alumina and other high temperature resistant materials to ensure that the composite material (composite sheet) can withstand temperatures higher than 1800°C. temperature of the semiconductor process. By using the preparation method of the present application, more and thinner siliconcarbide substrate sheets 20 can be cut from the samesilicon carbide rod 10 , thereby preparing more andthinner chips 40 , and effectively reducing the manufacturing cost of thechips 40 . Of course, for those skilled in the art, the Bonding process is understandable and achievable, and will not be described in detail in this application.

在本发明的另一些具体实施方式中，步骤S2包括：In other specific embodiments of the present invention, step S2 includes:

S21’、将辅料混合后，在碳化硅衬底片20的碳面进行流延成型；S21', after mixing the auxiliary materials, tape casting is performed on the carbon surface of the siliconcarbide substrate sheet 20;

S22’、对碳化硅衬底片20进行烧结，在碳化硅衬底片20的碳面形成辅助层30，得到复合片；S22', sintering the siliconcarbide substrate sheet 20, and forming anauxiliary layer 30 on the carbon surface of the siliconcarbide substrate sheet 20 to obtain a composite sheet;

S23’、对复合片进行研磨以调整其厚度、平整度和粗糙度。S23', grinding the composite sheet to adjust its thickness, flatness and roughness.

也就是说，在本发明的芯片的制备方法中，还可以利用流延法或多次CVD等方式选择合适的耐高温材料将碳化硅衬底片20增厚。该耐高温材料可以是以碳化硅粉末或氧化铝粉末为骨料，加黏土和聚乙烯醇进行混合得到的辅料。将辅料混合后，在碳化硅衬底片20的碳面进行流延成型。然后通过对碳化硅衬底片20进行高温烧结，在碳化硅衬底片20的碳面形成辅助层30，得到复合片，最后，对复合片进行研磨，调整复合片的厚度、平整度和粗糙度，得到350um的复合片。That is to say, in the preparation method of the chip of the present invention, the siliconcarbide substrate sheet 20 can be thickened by selecting a suitable high temperature resistant material by means of a casting method or multiple CVD methods. The high temperature resistant material can be an auxiliary material obtained by mixing silicon carbide powder or alumina powder as aggregate, adding clay and polyvinyl alcohol. After mixing the auxiliary materials, tape casting is performed on the carbon surface of the siliconcarbide substrate sheet 20 . Then, by sintering the siliconcarbide substrate sheet 20 at high temperature, anauxiliary layer 30 is formed on the carbon surface of the siliconcarbide substrate sheet 20 to obtain a composite sheet. Finally, the composite sheet is ground to adjust the thickness, flatness and roughness of the composite sheet. A composite sheet of 350um was obtained.

具体地，在的流延法标准流程中，可以以碳化硅粉末或氧化铝粉末为骨料，加黏土和质量分数为3％-8％的聚乙烯醇(PVA)进行混合，在碳化硅衬底的碳面进行流延成型，得到的辅助层30的厚度大致在200um-600um左右，然后通过在800℃-1400℃的温度条件下进行高温烧结。烧结完成后通过标准研磨，可以得到350um的复合片。在后续的芯片40制造过程中，将复合片上的辅助层30通过刻蚀等方式去除后，可以得到厚度在100μm以内的芯片40。Specifically, in the standard process of the casting method, silicon carbide powder or alumina powder can be used as aggregate, clay and polyvinyl alcohol (PVA) with a mass fraction of 3%-8% can be mixed. The carbon surface of the bottom is tape-cast, and the thickness of the obtainedauxiliary layer 30 is about 200um-600um, and then sintered at a high temperature at a temperature of 800°C-1400°C. After the sintering is completed, a 350um composite sheet can be obtained by standard grinding. In the subsequent manufacturing process of thechip 40 , after theauxiliary layer 30 on the composite sheet is removed by etching or the like, achip 40 with a thickness of less than 100 μm can be obtained.

通过采用本申请的制备方法，可以在同一个碳化硅棒10上切割出更多更薄的碳化硅衬底片20，从而制备出更多更薄的芯片40，有效降低芯片40的制备成本。当然，流延法的工艺原理是本领域技术人员可以理解并且能够实现的，在本申请中不再详细赘述。By using the preparation method of the present application, more and thinner siliconcarbide substrate sheets 20 can be cut from the samesilicon carbide rod 10 , thereby preparing more andthinner chips 40 , and effectively reducing the manufacturing cost of thechips 40 . Of course, the process principle of the casting method can be understood and realized by those skilled in the art, and will not be described in detail in this application.

在本发明的一些具体实施方式中，步骤S2包括：In some specific embodiments of the present invention, step S2 includes:

S21”、在碳化硅衬底片20的碳面设置粘接剂；S21", setting an adhesive on the carbon surface of the siliconcarbide substrate sheet 20;

S22”、将辅助层30粘结在碳化硅衬底片20的碳面上；S22", bonding theauxiliary layer 30 on the carbon surface of the siliconcarbide substrate sheet 20;

S23”、对碳化硅衬底片20进行烧结，得到复合片；S23", sintering the siliconcarbide substrate sheet 20 to obtain a composite sheet;

S24”、对复合片进行研磨以调整其厚度、平整度和粗糙度。S24", the composite sheet is ground to adjust its thickness, flatness and roughness.

换句话说，在本发明的芯片的制备方法中，辅助层30还可以通过粘接剂复合在碳化硅衬底上。In other words, in the preparation method of the chip of the present invention, theauxiliary layer 30 can also be compounded on the silicon carbide substrate by an adhesive.

具体地，首先，可以在碳化硅衬底片20的碳面涂覆粘接剂，然后将辅助层30粘结在碳化硅衬底片20的碳面上，并对碳化硅衬底片20进行烧结，得到复合片。最后，通过对复合片进行研磨以调整其厚度、平整度和粗糙度，保证可以得到350um的复合片。Specifically, first, an adhesive may be applied to the carbon surface of the siliconcarbide substrate sheet 20, then theauxiliary layer 30 may be bonded to the carbon surface of the siliconcarbide substrate sheet 20, and the siliconcarbide substrate sheet 20 may be sintered to obtain composite sheet. Finally, by grinding the composite sheet to adjust its thickness, flatness and roughness, it is guaranteed that a 350um composite sheet can be obtained.

粘接剂可以采用以碳化硅粉末或氧化铝粉末为骨料，加黏土和聚乙烯醇进行混合得到的混合料，辅助层30可以采用多晶碳化硅层或氧化铝层等耐温温度大于2000℃高温的材料制备而成。通过利用以碳化硅粉末或氧化铝粉末为骨料，加黏土和质量分数为3％-8％的聚乙烯醇(PVA)混合后作为粘结剂，将的多晶碳化硅、氧化铝等材料粘结在碳化硅衬底片20的碳面，并进行高温烧结，高温烧结的温度可以达到1700℃以上，烧结完成后进行标准研磨，调整复合片的厚度、平整度和粗糙度，得到350um的复合片。The adhesive can be a mixture obtained by using silicon carbide powder or alumina powder as the aggregate, adding clay and polyvinyl alcohol for mixing, and theauxiliary layer 30 can be a polycrystalline silicon carbide layer or an alumina layer, etc. ℃ high temperature materials are prepared. By using silicon carbide powder or alumina powder as aggregate, adding clay and polyvinyl alcohol (PVA) with a mass fraction of 3% to 8% as a binder, the polycrystalline silicon carbide, alumina and other materials are mixed. It is bonded to the carbon surface of the siliconcarbide substrate sheet 20 and sintered at high temperature. The temperature of high temperature sintering can reach above 1700 ° C. After the sintering is completed, standard grinding is performed to adjust the thickness, flatness and roughness of the composite sheet to obtain a composite sheet of 350um. piece.

在后续的芯片40制造过程中，将复合片上的辅助层30通过刻蚀等方式去除后，可以得到厚度在100μm以内的芯片40。通过采用本申请的制备方法，可以在同一个碳化硅棒10上切割出更多更薄的碳化硅衬底片20，从而制备出更多更薄的芯片40，有效降低芯片40的制备成本。In the subsequent manufacturing process of thechip 40 , after theauxiliary layer 30 on the composite sheet is removed by etching or the like, achip 40 with a thickness of less than 100 μm can be obtained. By using the preparation method of the present application, more and thinner siliconcarbide substrate sheets 20 can be cut from the samesilicon carbide rod 10 , thereby preparing more andthinner chips 40 , and effectively reducing the manufacturing cost of thechips 40 .

总而言之，在本发明实施例中，通过将碳化硅晶锭切割成多个薄衬底片，并在每个薄衬底片上设置辅助层30，得到复合片，防止薄衬底片在加工过程破碎，最后再将复合片加工得到碳化硅芯片40后，去除辅助层30，得到厚度较薄的碳化硅芯片40，有效降低芯片40制造的成本。All in all, in the embodiment of the present invention, by cutting the silicon carbide ingot into a plurality of thin substrate sheets, and disposing theauxiliary layer 30 on each thin substrate sheet, a composite sheet is obtained, which prevents the thin substrate sheet from being broken during processing, and finally After the composite sheet is processed to obtain thesilicon carbide chip 40 , theauxiliary layer 30 is removed to obtain asilicon carbide chip 40 with a thinner thickness, which effectively reduces the cost of manufacturing thechip 40 .

本发明还提供一种芯片40，该芯片40由上述实施例中的制备方法制备而成(参见图2和图3)。由于根据本发明实施例的芯片的制备方法具有上述技术效果，因此，根据本发明的制备方法制备出的芯片40，厚度较薄，成本较低。The present invention also provides achip 40, which is prepared by the preparation method in the above embodiment (see FIG. 2 and FIG. 3). Since the chip preparation method according to the embodiment of the present invention has the above technical effects, thechip 40 prepared according to the preparation method of the present invention has a thinner thickness and lower cost.

当然，对于芯片40的具体制备工艺是本领域技术人员可以理解并且能够实现的，在本申请中不再详细赘述。Of course, the specific preparation process of thechip 40 can be understood and achievable by those skilled in the art, and will not be described in detail in this application.

上面结合附图对本发明的实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本发明的保护之内。The embodiments of the present invention have been described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of the present invention, without departing from the spirit of the present invention and the scope protected by the claims, many forms can be made, which all belong to the protection of the present invention.

Claims (10)

1. A preparation method of a chip is characterized by comprising the following steps:

s1, cutting the silicon carbide rod into a plurality of silicon carbide substrate slices, wherein the thickness of each silicon carbide substrate slice is smaller than a first set value;

s2, arranging an auxiliary layer on at least one side of the silicon carbide substrate slice to obtain a composite slice, wherein the total thickness of the composite slice is greater than a second set value, and the second set value is greater than the first set value;

s3, processing the composite sheet to obtain a chip;

and S4, removing the auxiliary layer on the chip.

2. The method for manufacturing a chip according to claim 1, wherein the first set value is less than 200 μm.

3. The method for manufacturing a chip according to claim 1, wherein the second predetermined value is 200 μm to 350 μm.

4. The method for manufacturing a chip according to claim 1, wherein the step S2 includes:

s21, bonding the auxiliary layer on one side of the silicon carbide substrate sheet to obtain the composite sheet;

and S22, grinding the composite sheet to adjust the thickness, the flatness and the roughness of the composite sheet.

5. The method for manufacturing a chip according to claim 4, wherein the auxiliary layer is a polycrystalline silicon carbide layer or an aluminum oxide layer, and the auxiliary layer has a temperature resistance of more than 2000 ℃.

6. The method for manufacturing a chip according to claim 1, wherein step S2 includes:

s21', mixing auxiliary materials, and carrying out tape casting on the carbon surface of the silicon carbide substrate slice;

s22', sintering the silicon carbide substrate slice, and forming the auxiliary layer on the carbon surface of the silicon carbide substrate slice to obtain the composite sheet;

s23', grinding the composite sheet to adjust its thickness, flatness and roughness.

7. The method for preparing a chip according to claim 6, wherein the auxiliary materials are: taking silicon carbide powder or alumina powder as aggregate, adding clay and polyvinyl alcohol, and mixing to obtain a mixture.

8. The method for manufacturing a chip according to claim 1, wherein the step S2 includes:

s21', setting adhesive on the carbon surface of the silicon carbide substrate sheet;

s22', bonding the auxiliary layer on the carbon surface of the silicon carbide substrate sheet;

s23', sintering the silicon carbide substrate slice to obtain the composite sheet;

s24', grinding the composite sheet to adjust the thickness, flatness and roughness of the composite sheet.

9. The method for manufacturing a chip according to claim 8, wherein the adhesive is: the composite material is prepared by mixing silicon carbide powder or alumina powder serving as an aggregate with clay and polyvinyl alcohol, and the auxiliary layer is a polycrystalline silicon carbide layer or an alumina layer.

10. A chip produced by the production method according to any one of claims 1 to 9.

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