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CN114553169A - Bulk acoustic wave resonator, filter and electronic device using convex structure to reduce acoustic impedance - Google Patents

Bulk acoustic wave resonator, filter and electronic device using convex structure to reduce acoustic impedanceDownload PDF

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CN114553169A
CN114553169ACN202011330090.2ACN202011330090ACN114553169ACN 114553169 ACN114553169 ACN 114553169ACN 202011330090 ACN202011330090 ACN 202011330090ACN 114553169 ACN114553169 ACN 114553169A
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resonator
region
thickness
acoustic impedance
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张孟伦
庞慰
宁远
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ROFS Microsystem Tianjin Co Ltd
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Abstract

Translated fromChinese

本发明涉及一种体声波谐振器，包括：基底；声学镜；底电极；顶电极；和压电层，设置在底电极与顶电极之间；设置在谐振器的有效区域内的凸起结构，所述凸起结构沿有效区域的边缘设置，其中：凸起结构、声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成有效区域的边缘区，有效区域在水平方向上处于有效区域边缘部内侧的区域为有效区域的中心区；谐振器在中心区内的膜层结构具有第一声阻抗，谐振器在边缘区内的膜层结构具有第二声阻抗，凸起结构具有预定厚度以使得第二声阻抗小于第一声阻抗。本发明还涉及一种具有上述谐振器的滤波器以及具有该滤波器或谐振器的电子设备。

Figure 202011330090

The invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; , the raised structure is arranged along the edge of the effective area, wherein: the overlapping area of the raised structure, the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes the edge area of the effective area, and the effective area The area inside the edge of the effective area in the horizontal direction is the center area of the effective area; the film layer structure of the resonator in the center area has a first acoustic impedance, and the film layer structure of the resonator in the edge area has a second acoustic impedance , the raised structure has a predetermined thickness so that the second acoustic impedance is smaller than the first acoustic impedance. The present invention also relates to a filter having the above-mentioned resonator and an electronic device having the filter or resonator.

Figure 202011330090

Description

Translated fromChinese
利用凸起结构降低声阻抗的体声波谐振器、滤波器及电子 设备Bulk acoustic wave resonators, filters and electronic equipment using raised structures to reduce acoustic impedance

技术领域technical field

本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器、一种具有该谐振器的滤波器，以及一种具有该谐振器或者该滤波器的电子设备。Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the resonator or the filter.

背景技术Background technique

电子器件作为电子设备的基本元素，已经被广泛应用，其应用范围包括移动电话、汽车、家电设备等。此外，未来即将改变世界的人工智能、物联网、 5G通讯等技术仍然需要依靠电子器件作为基础。As the basic elements of electronic equipment, electronic devices have been widely used, and their applications include mobile phones, automobiles, home appliances and so on. In addition, technologies such as artificial intelligence, the Internet of Things, and 5G communications that will change the world in the future still need to rely on electronic devices as their foundation.

电子器件根据不同工作原理可以发挥不同的特性与优势，在所有电子器件中，利用压电效应(或逆压电效应)工作的器件是其中很重要一类，压电器件有着非常广泛的应用情景。薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为压电器件的重要成员正在通信领域发挥着重要作用，特别是FBAR滤波器在射频滤波器领域市场占有份额越来越大，FBAR具有尺寸小、谐振频率高、品质因数高、功率容量大、滚降效应好等优良特性，其滤波器正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器，在无线通信射频领域发挥巨大作用，其高灵敏度的优势也能应用到生物、物理、医学等传感领域。Electronic devices can play different characteristics and advantages according to different working principles. Among all electronic devices, devices that use the piezoelectric effect (or inverse piezoelectric effect) are one of the most important categories. Piezoelectric devices have a very wide range of application scenarios. . Film Bulk Acoustic Resonator (FBAR for short, also known as Bulk Acoustic Resonator, also known as BAW), as an important member of piezoelectric devices, is playing an important role in the field of communications, especially FBAR filters are used in radio frequency filters. The market share in the field is increasing. FBAR has excellent characteristics such as small size, high resonant frequency, high quality factor, large power capacity, and good roll-off effect. Its filters are gradually replacing traditional surface acoustic wave (SAW) filters And ceramic filters, play a huge role in the field of wireless communication radio frequency, its high sensitivity advantage can also be applied to biological, physical, medical and other sensing fields.

薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电材料。通过在两电极间输入正弦信号， FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。The structural main body of the thin film bulk acoustic wave resonator is a "sandwich" structure composed of an electrode-piezoelectric film-electrode, that is, a piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between two electrodes, the FBAR uses the inverse piezoelectric effect to convert the input electrical signal into a mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into an electrical signal output.

图1为已有的体声波谐振器的截面示意图，其中10为基底，20为声学镜， 30为底电极，40为压电层，50为顶电极，range1区域为该谐振器的有效区域， range2区域为在顶电极的非电极连接端在水平方向上位于顶电极的边缘与声学镜的边界之间的区域。1 is a schematic cross-sectional view of an existing bulk acoustic wave resonator, wherein 10 is a substrate, 20 is an acoustic mirror, 30 is a bottom electrode, 40 is a piezoelectric layer, 50 is a top electrode, and the range1 area is the effective area of the resonator, The range2 region is the region between the edge of the top electrode and the boundary of the acoustic mirror in the horizontal direction at the non-electrode connection end of the top electrode.

如图1所示，range1区域具有第一声阻抗Z1，range2区域具有第二声阻抗Z2，虽然Z1不同于Z2在谐振器的有效区域的边界处存在声学不匹配的情况，但是该不匹配不足以减少能量泄露，实际上，在图1所示的谐振器工作过程中，谐振器振动时的声波能量会沿着压电层传输到有效区域的外侧的range2区域，即存在较大的能量泄露，基于图1所示结构的能量泄露会造成谐振器的Q值的恶化。As shown in Figure 1, the range1 region has a first acoustic impedance Z1, and the range2 region has a second acoustic impedance Z2. Although Z1 is different from Z2 in that there is an acoustic mismatch at the boundary of the effective region of the resonator, the mismatch is insufficient In order to reduce energy leakage, in fact, during the working process of the resonator shown in Figure 1, the acoustic energy of the resonator will be transmitted along the piezoelectric layer to the range2 area outside the effective area, that is, there is a large energy leakage. , the energy leakage based on the structure shown in FIG. 1 will cause the deterioration of the Q value of the resonator.

已经提出沿谐振器的有效区域设置凸起结构来增大凸起结构所在区域的声阻抗，以防止或减少上述能量泄露的方案。在上述方案中，凸起结构所在区域的膜层结构的声阻抗大于在该凸起结构的内侧的膜层结构的声阻抗。现有技术中，往往简单的认为通过设置凸起结构就可以增大凸起结构所在区域的声阻抗，但是，在实际中却存在即使设置了凸起结构，凸起结构所在区域的声阻抗与凸起结构内侧的区域的声阻抗也难以或不能形成有效的声学不匹配度的情况，此时则达不到通过设置凸起结构来减少能量泄露从而提升Q值的效果。It has been proposed to provide a raised structure along the effective area of the resonator to increase the acoustic impedance of the area where the raised structure is located, so as to prevent or reduce the above-mentioned energy leakage. In the above solution, the acoustic impedance of the membrane structure in the region where the protruding structure is located is greater than the acoustic impedance of the membrane structure inside the protruding structure. In the prior art, it is often simply believed that the acoustic impedance of the area where the raised structure is located can be increased simply by providing the raised structure. It is also difficult or impossible to form an effective acoustic mismatch in the acoustic impedance of the region inside the raised structure. In this case, the effect of reducing energy leakage and improving the Q value by providing the raised structure cannot be achieved.

发明内容SUMMARY OF THE INVENTION

为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。The present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.

根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：According to an aspect of the embodiments of the present invention, a bulk acoustic wave resonator is proposed, comprising:

基底；base;

声学镜；acoustic mirror;

底电极；bottom electrode;

顶电极；和top electrode; and

压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,

其中：in:

声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成谐振器的有效区域；The overlapping area of the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an effective area of the resonator;

所述谐振器还包括设置在有效区域内的凸起结构，所述凸起结构沿有效区域的边缘设置；The resonator further includes a raised structure disposed in the effective area, the raised structure disposed along the edge of the effective area;

所述凸起结构、声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成有效区域的边缘区，所述有效区域在水平方向上处于有效区域边缘部内侧的区域为有效区域的中心区；The overlapping area of the convex structure, the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an edge area of the effective area, the effective area being located inside the edge of the effective area in the horizontal direction. The area is the central area of the effective area;

所述谐振器在中心区内的膜层结构具有第一声阻抗，所述谐振器在边缘区内的膜层结构具有第二声阻抗，所述凸起结构具有预定厚度以使得所述第二声阻抗小于所述第一声阻抗。The film layer structure in the central region of the resonator has a first acoustic impedance, the film layer structure in the edge region of the resonator has a second acoustic impedance, and the raised structure has a predetermined thickness such that the second acoustic impedance is The acoustic impedance is smaller than the first acoustic impedance.

本发明的实施例还涉及一种滤波器，包括上述的体声波谐振器。Embodiments of the present invention also relate to a filter comprising the above-mentioned bulk acoustic wave resonator.

本发明的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。Embodiments of the present invention also relate to an electronic device comprising the above-mentioned filter or the above-mentioned resonator.

附图说明Description of drawings

以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：These and other features and advantages of the various disclosed embodiments of the present invention may be better understood by the following description and accompanying drawings, in which like reference numerals refer to like parts throughout, wherein:

图1为已有的体声波谐振器的示意性截面图；1 is a schematic cross-sectional view of an existing bulk acoustic wave resonator;

图2为根据本发明的一个示例性实施例的体声波谐振器的截面示意图，其中谐振器并未设置钝化层；2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the resonator is not provided with a passivation layer;

图3A为示出在图2所示结构中的range2区域内的S1模式的色散曲线的示例图，range2区域中的凸起结构、顶电极和底电极为金属钨，压电层为氮化铝；FIG. 3A is an example diagram showing the dispersion curve of the S1 mode in the range2 region in the structure shown in FIG. 2 , the bump structure, the top electrode and the bottom electrode in the range2 region are metal tungsten, and the piezoelectric layer is aluminum nitride ;

图3B为示出在图2所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图3B中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；FIG. 3B is an example diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 2 , the abscissa in FIG. 3B represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图3C示例性示出了图2所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 3C exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 2;

图4为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图，其中谐振器设置有钝化层；4 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, wherein the resonator is provided with a passivation layer;

图5A为示出在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图5A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；5A is an exemplary diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 , the abscissa in FIG. 5A represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图5B示例性示出了图5A所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 5B exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 5A;

图6A为示出在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图6A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；6A is an example diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 , the abscissa in FIG. 6A represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图6B示例性示出了图6A所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 6B exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 6A;

图7A为示出在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图7A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；7A is an example diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 , the abscissa in FIG. 7A represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图7B示例性示出了图7A所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 7B exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 7A;

图8A为示出在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图8A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；FIG. 8A is an example diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 , the abscissa in FIG. 8A represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图8B示例性示出了图8A所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 8B exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 8A;

图9A为示出在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图9A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗；FIG. 9A is an example diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 , the abscissa in FIG. 9A represents the transverse wave vector, and the left ordinate represents the frequency, The right ordinate represents the acoustic impedance;

图9B示例性示出了图9A所示结构中，凸起结构的厚度与range2区域的声阻抗之间的关系图；FIG. 9B exemplarily shows the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 9A;

图10为示出在图4所示结构中凸起结构的厚度与range2区域的声阻抗之间的关系图，range2区域中的顶电极和底电极为钼，压电层和凸起结构为氮化铝。10 is a graph showing the relationship between the thickness of the bump structure and the acoustic impedance of the range2 region in the structure shown in FIG. 4, where the top and bottom electrodes in the range2 region are molybdenum, and the piezoelectric layer and the bump structure are nitrogen Aluminum.

具体实施方式Detailed ways

下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。The technical solutions of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals refer to the same or similar parts. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention.

本发明提出了另外一种解决方案，具体的，谐振器设置的凸起结构所在区域的膜层结构的声阻抗小于在该凸起结构的内侧的膜层结构的声阻抗，如此能阻止或减少声波能量泄露到有效区域的外侧，从而可以提高并联谐振频率fp处的谐振器Q值。The present invention proposes another solution. Specifically, the acoustic impedance of the membrane layer structure in the region where the protruding structure of the resonator is located is smaller than the acoustic impedance of the membrane layer structure on the inner side of the protruding structure, which can prevent or reduce the acoustic impedance of the membrane layer structure. The acoustic energy leaks to the outside of the effective area, so that the Q value of the resonator at the parallel resonance frequency fp can be increased.

图2为根据本发明的一个示例性实施例的体声波谐振器的截面示意图，其中谐振器并未设置钝化层，图2中各附图标记如下：2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the resonator is not provided with a passivation layer, and the reference numerals in FIG. 2 are as follows:

110：基底，可选材料为单晶硅、石英、砷化镓或蓝宝石等。110: Substrate, the optional material is single crystal silicon, quartz, gallium arsenide or sapphire, etc.

120：声学镜，其位于基底110的上表面或嵌于基底的内部，在图2中声学镜为嵌入基底中的空腔所构成，但是声学镜也可以为布拉格反射层及其他等效形式。120 : the acoustic mirror, which is located on the upper surface of thesubstrate 110 or embedded in the interior of the substrate. In FIG. 2 , the acoustic mirror is formed by a cavity embedded in the substrate, but the acoustic mirror can also be a Bragg reflection layer and other equivalent forms.

130：底电极，其可以沉积在声学镜的上表面，并覆盖声学镜。可将底电极 130边缘刻蚀成斜面，并且该斜面与谐振器的有效区域边缘对齐，此外底电极 130的边缘还可以为阶梯状、垂直状或是其它相似的结构。底电极的材料可为：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛 (Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属，以及以上金属的合金等。130: Bottom electrode, which can be deposited on the upper surface of the acoustic mirror, and covers the acoustic mirror. The edge of thebottom electrode 130 can be etched into a bevel, and the bevel is aligned with the edge of the effective area of the resonator, and the edge of thebottom electrode 130 can also be stepped, vertical or other similar structures. The material of the bottom electrode can be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium ( Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper ( Cu), aluminum (Al), chromium (Cr), arsenic-doped gold and other similar metals, as well as alloys of the above metals.

140：压电薄膜层或压电层，可选氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等材料，也可包含上述材料的一定原子比的稀土元素掺杂材料，掺杂元素如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。140: Piezoelectric thin film layer or piezoelectric layer, optional aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3 ), quartz (Quartz), potassium niobate (KNbO3 ) or lithium tantalate (LiTaO3 ) and other materials, can also include rare earth element doping materials with a certain atomic ratio of the above materials, such as scandium (Sc), yttrium (Y), magnesium (Mg), Titanium (Ti), Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.

150：顶电极，其材料可为：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属，以及以上金属的合金等。顶电极的材料与底电极可以相同也可以不同。在图2中，顶电极上方并未设置钝化层，但是如能够理解的，也可以设置钝化层。150: Top electrode, the material of which can be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti), Osmium (Os), Magnesium (Mg), Gold (Au), Tungsten (W), Molybdenum (Mo), Platinum (Pt), Ruthenium (Ru), Iridium (Ir), Germanium (Ge) , copper (Cu), aluminum (Al), chromium (Cr), arsenic-doped gold and other similar metals, as well as alloys of the above metals. The material of the top electrode and the bottom electrode may be the same or different. In Figure 2, no passivation layer is provided over the top electrode, but as can be appreciated, a passivation layer may also be provided.

160：凸起结构，凸起结构的材料同顶电极130或底电极150或压电层140。凸起结构位于有效区域的边缘位置，凸起结构可以降低其所在有效区域的声阻抗。160 : a protruding structure, the material of the protruding structure is the same as thetop electrode 130 or thebottom electrode 150 or thepiezoelectric layer 140 . The raised structure is located at the edge of the effective area, and the raised structure can reduce the acoustic impedance of the effective area where it is located.

如图2所示的谐振器结构中，在顶电极150边缘Range2处沉积凸起结构。如图2所示，谐振器按照层叠状态可分为三个区域，其中第一个区域Range1为有效区域(底电极、压电层、顶电极和声学镜在谐振器的厚度方向上的重叠区域)的中心区(底电极、压电层、顶电极的重叠区)，第二个区域Range2为有效区域的边缘区(底电极、压电层、顶电极、凸起结构的重叠区)，第三个区域Range3为外侧区域或第三区(在图2中为在凸起结构的外侧在声学镜边界的内侧，底电极、压电层的重叠区)，这三个区域的声阻抗分别表示为Z1、Z2和Z3，如图2所示。In the resonator structure shown in FIG. 2 , a raised structure is deposited at the edge Range2 of thetop electrode 150 . As shown in Figure 2, the resonator can be divided into three regions according to the stacked state, wherein the first region Range1 is the effective region (the overlapping region of the bottom electrode, the piezoelectric layer, the top electrode and the acoustic mirror in the thickness direction of the resonator) ) of the central area (the overlapping area of the bottom electrode, the piezoelectric layer, and the top electrode), the second area Range2 is the edge area of the effective area (the overlapping area of the bottom electrode, the piezoelectric layer, the top electrode, and the raised structure), The three regions, Range3, are the outer region or the third region (in Figure 2, it is the outer side of the convex structure, the inner side of the boundary of the acoustic mirror, the overlapping region of the bottom electrode and the piezoelectric layer), and the acoustic impedances of these three regions respectively represent are Z1, Z2 and Z3, as shown in Figure 2.

在没有设置凸起结构(如图1)时，谐振器谐振产生的声波直接泄漏在没有顶电极的外侧区域(图1中的Range2)中，导致谐振器的Q值下降。而如图2 中所示的结构，如果在第二区域Range2中谐振器对应部分的声阻抗小于第一区域Range1中谐振器对应部分的声阻抗，则可以阻止声波能量泄露到有效区域外侧，从而提高Q值。When the protruding structure is not provided (as shown in Fig. 1), the acoustic wave generated by the resonance of the resonator leaks directly into the outer region (Range2 in Fig. 1) without the top electrode, resulting in a decrease in the Q value of the resonator. In the structure shown in Fig. 2, if the acoustic impedance of the corresponding part of the resonator in the second region Range2 is smaller than the acoustic impedance of the corresponding part of the resonator in the first region Range1, the acoustic energy can be prevented from leaking to the outside of the effective region, thereby Increase the Q value.

在本发明中，每一区域的声阻抗可由该区域的色散曲线求出，此处的声阻抗是指声波在固体薄膜横向传播时的声阻抗值，求解的公式为

Figure RE-GDA0003006091680000061
其中，
Figure RE-GDA0003006091680000062
为该区域的平均密度，c为该区域横向声波的相速度，相速度可由f- 色散曲线中的纵坐标频率和k-色散曲线中的横坐标横向波矢计算得出。In the present invention, the acoustic impedance of each region can be obtained from the dispersion curve of the region, where the acoustic impedance refers to the acoustic impedance value of the acoustic wave when the sound wave propagates laterally in the solid film, and the solution formula is:
Figure RE-GDA0003006091680000061
in,
Figure RE-GDA0003006091680000062
is the average density of the region, c is the phase velocity of the transverse acoustic wave in the region, and the phase velocity can be calculated from the frequency of the ordinate in the f-dispersion curve and the transverse wave vector of the abscissa in the k-dispersion curve.

根据声阻抗的计算公式，Range2区域的声阻抗的大小主要和凸起结构的材料与厚度有关系，并且随着厚度的变化，Range2区域的声阻抗的变化趋势与该区域的平均密度和相速度变化趋势有关。变化趋势具体情况有两种情况：According to the calculation formula of acoustic impedance, the size of the acoustic impedance in the Range2 region is mainly related to the material and thickness of the convex structure, and with the change of thickness, the variation trend of the acoustic impedance in the Range2 region is related to the average density and phase velocity of the region. related to changing trends. There are two specific situations of changing trends:

第一种情况：凸起结构选取的材料密度小于或等于Range1区域的平均密度。随着凸起结构的厚度增加，Range2区域的平均密度随之下降，相速度也随之下降，声阻抗也随之下降(例如参见后面提及的图10)。这种情况下，只要存在凸起结构，Range2区域的声阻抗就小于Range1区域的声阻抗，能够起到阻止声波能量泄露到有效区域外侧从而提高Q值的作用。The first case: the density of the material selected for the protruding structure is less than or equal to the average density of the Range1 region. As the thickness of the raised structure increases, the average density of the Range2 region decreases, the phase velocity decreases, and the acoustic impedance also decreases (see, for example, Figure 10 mentioned later). In this case, as long as there is a convex structure, the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can prevent the acoustic energy from leaking to the outside of the effective region and improve the Q value.

第二种情况：凸起结构选取的材料的密度大于Range1区域的平均密度。随着凸起结构的厚度增加，Range2区域的声阻抗存在下降后再上升的趋势(例如参见后面提及的图3C)；或者，随着凸起结构的加厚，Range2区域的声阻抗存在声阻抗下降一段之后再次上升的趋势(例如参见后面提及的图5B，图6B)；或者，随着凸起结构的加厚，Range2区域的声阻抗存在声阻抗下降一段之后再次上升然后下降的趋势(例如参见后面提及的图8B，图9B)。The second case: the density of the material selected by the protruding structure is greater than the average density of the Range1 region. As the thickness of the raised structure increases, the acoustic impedance of the Range2 region tends to decrease and then increase (for example, see Figure 3C mentioned later); or, as the thickness of the raised structure increases, the acoustic impedance of the Range2 region has an acoustic impedance The impedance decreases for a period of time and then rises again (for example, see Figure 5B and Figure 6B mentioned later); or, with the thickening of the convex structure, the acoustic impedance in the Range2 region has a tendency to increase again and then decrease after the acoustic impedance decreases for a period of time (See, eg, the later-mentioned Fig. 8B, Fig. 9B).

根据上述的声阻抗变化规律，凸起结构的厚度应选取在一定范围内，以使得保证Range2区域的声阻抗小于Range1区域的声阻抗，在进一步的实施例中，使得Range2区域的声阻抗小于Range1区域的声阻抗0.2％以上，0.2％以上可以使两区域形成足够的声阻抗不匹配，可以更有效的阻止声波能量从有效区域 (Range1+Range2)泄露到外侧区域。在进一步的实施例中，可以在这个厚度范围内选择合适的厚度作为凸起结构的厚度。选择凸起结构的厚度一方面要考虑使得声阻抗不匹配尽量大，另一方面需要考虑工艺方面的实现。例如，若选取的凸起结构的厚度计算得到的Range2的声阻抗值接近Range1(例如小于0.2％)，则不利于形成声阻抗的足够不匹配，达不到有效阻止声波能量泄露到有效区域外侧从而提高Q值的作用。另外，若选取Range2区域的声阻抗大于Range1 区域也可以形成声阻抗的不匹配，但是，从图5B和图6B中可以看出，只有当凸起结构的厚度较大，例如大于1μm以上时，Range2区域的声阻抗才能足够大形成这种不匹配。但是，凸起结构的厚度过厚，一方面在工艺上难以实现，另一方面会加剧声波在Range1区域和Range2区域在界面处的模式转换，不利于声波限制，导致寄生模式增多。综上所述，Range2区域声阻抗小于Range1区域工艺上更易实现且更有利于声波的限制及Q值的提升。According to the above-mentioned variation law of acoustic impedance, the thickness of the raised structure should be selected within a certain range, so as to ensure that the acoustic impedance of the Range2 area is smaller than the acoustic impedance of the Range1 area. In a further embodiment, the acoustic impedance of the Range2 area is made smaller than that of the Range1 area. The acoustic impedance of the area is more than 0.2%, and more than 0.2% can form a sufficient acoustic impedance mismatch between the two areas, which can more effectively prevent the acoustic energy from leaking from the effective area (Range1+Range2) to the outer area. In further embodiments, an appropriate thickness within this thickness range may be selected as the thickness of the protruding structure. When selecting the thickness of the protruding structure, on the one hand, it is necessary to consider making the acoustic impedance mismatch as large as possible, and on the other hand, it is necessary to consider the realization of the process. For example, if the acoustic impedance value of Range2 calculated by the thickness of the selected raised structure is close to Range1 (for example, less than 0.2%), it is not conducive to the formation of a sufficient mismatch of acoustic impedance, and it cannot effectively prevent the acoustic energy from leaking to the outside of the effective area. Thereby increasing the effect of the Q value. In addition, if the acoustic impedance of the Range2 region is selected to be greater than that of the Range1 region, the mismatch of the acoustic impedance can also be formed. However, as can be seen from Fig. 5B and Fig. 6B, only when the thickness of the protruding structure is large, such as greater than 1 μm, the Only the acoustic impedance in the Range2 region is large enough to form this mismatch. However, if the thickness of the protruding structure is too thick, on the one hand, it is difficult to realize in the process, and on the other hand, it will intensify the mode conversion of the acoustic wave in the Range1 region and the Range2 region at the interface, which is not conducive to the confinement of the acoustic wave, resulting in an increase of parasitic modes. To sum up, the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which is easier to achieve in the process and is more conducive to the limitation of acoustic waves and the improvement of the Q value.

基于以上，在第二种情况下，示例性的，假设图2的基底110为单晶硅基底(厚度为400μm)，底电极130(厚度为

Figure RE-GDA0003006091680000071
)、顶电极150(厚度为
Figure RE-GDA0003006091680000072
Figure RE-GDA0003006091680000073
)、凸起结构160均为钨，压电层140(厚度为
Figure RE-GDA0003006091680000074
)为氮化铝。Based on the above, in the second case, for example, it is assumed that thesubstrate 110 in FIG. 2 is a single crystal silicon substrate (with a thickness of 400 μm), and the bottom electrode 130 (with a thickness of 400 μm)
Figure RE-GDA0003006091680000071
), the top electrode 150 (thickness is
Figure RE-GDA0003006091680000072
Figure RE-GDA0003006091680000073
), the protrudingstructures 160 are all tungsten, and the piezoelectric layer 140 (thickness is
Figure RE-GDA0003006091680000074
) is aluminum nitride.

图3A为示出基于上述的膜层材料和膜层厚度的、在图2所示结构中的 range2区域内的S1模式的色散曲线的示例图，图3A中横坐标代表横向的波矢，纵坐标代表频率(frequency)。图3A中，示出了基底110为单晶硅基底(厚度为400μm)，底电极130(厚度为

Figure RE-GDA0003006091680000075
)、顶电极150(厚度为
Figure RE-GDA0003006091680000076
)、凸起结构160均为钨，压电层140(厚度为
Figure RE-GDA0003006091680000077
)为氮化铝压电材料的情况下，凸起结构(OB)的厚度取值分别为0、0.02、0.04、0.06、0.08、0.1、0.12、 0.14、0.16、0.18、0.2μm时的色散曲线。如能够理解的，当凸起结构的厚度为0时，Rang 1区域和Range2区域的厚度相同，所以的色散曲线也相同。FIG. 3A is an example diagram showing the dispersion curve of the S1 mode in the range2 region in the structure shown in FIG. 2 based on the above-mentioned film material and film thickness, the abscissa in FIG. 3A represents the transverse wave vector, the vertical The coordinates represent frequency. In FIG. 3A , it is shown that thesubstrate 110 is a single crystal silicon substrate (thickness is 400 μm), and the bottom electrode 130 (thickness is 400 μm)
Figure RE-GDA0003006091680000075
), the top electrode 150 (thickness is
Figure RE-GDA0003006091680000076
), the protrudingstructures 160 are all tungsten, and the piezoelectric layer 140 (thickness is
Figure RE-GDA0003006091680000077
) is the aluminum nitride piezoelectric material, the dispersion curve when the thickness of the convex structure (OB) is 0, 0.02, 0.04, 0.06, 0.08, 0.1, 0.12, 0.14, 0.16, 0.18, 0.2 μm, respectively . As can be understood, when the thickness of the protruding structure is 0, the thicknesses of theRang 1 region and theRange 2 region are the same, so the dispersion curves are also the same.

图3B为示出基于膜层结构(基底110为单晶硅基底、厚度为400μm)，底电极130为钨且厚度为

Figure RE-GDA0003006091680000081
顶电极150为钨且厚度为
Figure RE-GDA0003006091680000082
凸起结构160 为钨且厚度为
Figure RE-GDA0003006091680000083
压电层140为氮化铝且厚度为
Figure RE-GDA0003006091680000084
)的、在图2所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图3B中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。FIG. 3B shows the structure based on the film layer (thesubstrate 110 is a single crystal silicon substrate with a thickness of 400 μm), and thebottom electrode 130 is tungsten with a thickness of 400 μm.
Figure RE-GDA0003006091680000081
Thetop electrode 150 is tungsten and has a thickness of
Figure RE-GDA0003006091680000082
Thebump structure 160 is tungsten and has a thickness of
Figure RE-GDA0003006091680000083
Thepiezoelectric layer 140 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000084
), the dispersion curve of the S1 mode in the Range1 region and the S1 mode in the Range2 region in the structure shown in FIG. 2 and an example diagram of the acoustic impedance, the abscissa in FIG. 3B represents the transverse wave vector, the left ordinate represents the frequency, the right side represents the frequency The ordinate represents the acoustic impedance.

在图3B中，谐振器的并联谐振频率在图3B中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1区域和Range2区域的横向波矢分别为k1＝0.365和 k2＝0.40(横坐标辅助线)，进而可以求出该频率下Range1和Range2区域的声阻抗分别为Z1＝40.76TRayl和Z2＝40.40TRayl。图3B中可以看出，Range2区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 3B, the parallel resonance frequency of the resonator is marked as fp in Fig. 3B (the auxiliary line of the ordinate), and the transverse wave vectors of the parallel resonance frequency in the Range1 region and the Range2 region are k1=0.365 and k2=0.40 (horizontal Coordinate auxiliary line), and then the acoustic impedances of Range1 and Range2 regions at this frequency can be obtained as Z1=40.76TRayl and Z2=40.40TRayl, respectively. It can be seen in Figure 3B that the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby increasing the Q value at the parallel resonance frequency.

图3C示出了基于膜层结构(基底110为单晶硅基底且厚度为400μm，底电极130为钨且厚度为

Figure RE-GDA0003006091680000085
顶电极150为钨且厚度为
Figure RE-GDA0003006091680000086
凸起结构160 为钨，压电层140为氮化铝且厚度为
Figure RE-GDA0003006091680000087
)的、图2中的谐振器的Range2 区域在并联谐振频率时的声阻抗值(acoustic impedance)与凸起结构的厚度 (OB Height)之间的关系，可以看出，随着凸起结构的厚度的增加，Range2区域的声阻抗出现一个先上升接着下降然后上升的趋势。在图3C中，凸起结构的厚度取了0-0.2μm之间以0.02μm为间隔的多个点。在图3C中，可以看到，相对于基于设置凸起结构增大Range2区域的声阻抗(图3C中凸起结构的厚度不大于0.02μm)，基于设置凸起结构降低Range2区域的声阻抗值而获得Range2 区域与Range1区域的阻抗值差值更大方面的效果更显著；而且，相对于例如设置凸起结构的厚度大于0.17μm而增大Range2区域的声阻抗值，设置凸起结构降低Range2区域的声阻抗值的方案的凸起结构的厚度可以更低，这也有助于谐振器的小型化。FIG. 3C shows the structure based on the film layer (thesubstrate 110 is a single crystal silicon substrate with a thickness of 400 μm, and thebottom electrode 130 is a tungsten with a thickness of 400 μm).
Figure RE-GDA0003006091680000085
Thetop electrode 150 is tungsten and has a thickness of
Figure RE-GDA0003006091680000086
The protrudingstructure 160 is tungsten, and thepiezoelectric layer 140 is aluminum nitride with a thickness of
Figure RE-GDA0003006091680000087
), the relationship between the acoustic impedance value (acoustic impedance) and the thickness (OB Height) of the raised structure in the Range2 region of the resonator in Fig. 2 at the parallel resonance frequency, it can be seen that with the increase of the raised structure With the increase of thickness, the acoustic impedance of the Range2 region shows a trend of first rising, then falling and then rising. In FIG. 3C , the thickness of the protruding structure is taken as a plurality of points between 0 and 0.2 μm with an interval of 0.02 μm. In FIG. 3C , it can be seen that the acoustic impedance of the Range2 area is decreased based on the setting of the raised structure compared to the increase of the acoustic impedance of the Range2 area based on the setting of the raised structure (the thickness of the raised structure in FIG. 3C is not greater than 0.02 μm). The effect of obtaining a larger impedance value difference between the Range2 region and the Range1 region is more significant; and, compared to, for example, setting the thickness of the protruding structure greater than 0.17 μm to increase the acoustic impedance value of the Range2 region, setting the protruding structure reduces the Range2 The thickness of the protruding structure of the scheme of the acoustic impedance value of the region can be lower, which also contributes to the miniaturization of the resonator.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图3B中，0.04-0.14μm),进一步的，使得Range2区域的声阻抗小于Range1 区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 3B, 0.04-0.14 μm), and further, the acoustic impedance of the Range2 region is smaller than the acoustic impedance of the Range1 region by more than 0.2%, so as to prevent or reduce the leakage of acoustic energy. to the outside of the effective area, thereby increasing the Q value.

在以上的实施例中，压电层除了氮化铝之外，也可以为掺杂氮化铝或者前面提及的其他压电材料。In the above embodiments, in addition to aluminum nitride, the piezoelectric layer may also be doped aluminum nitride or other piezoelectric materials mentioned above.

在以上的实施例中，也可以凸起结构采用钨，而顶电极和底电极采用前面提及的其他导电材料。In the above embodiments, tungsten can also be used for the protruding structure, and other conductive materials mentioned above are used for the top electrode and the bottom electrode.

在本发明中，对于在第三区的S1模式色散曲线(如图3B中虚线)，其与谐振器的并联谐振频率没有交点，形成了S1模式声波禁带(S1模式在谐振器的并联谐振频率fp处无法在声学禁带内传播，形成声学阻断)，由于S1模式无法在第三区传播，更有利于声波能量的限制，从而可以提高fp处的Q值。且随着凸起结构厚度的增加，第二区的色散曲线不断下降，此禁带进一步变宽，这增加第二区与第三区之间的不匹配。因此，可以选择特定范围的凸起结构的厚度，该厚度既可以使得Range2区域的声阻抗小于Range1区域的声阻抗，同时还可以有一个较大的厚度，如此，可以有利于实现Range1区域与Range2区域之间的声学不匹配，以及Range2区域与Range3区域之间的声学不匹配。In the present invention, for the S1 mode dispersion curve in the third region (the dotted line in FIG. 3B ), there is no intersection with the parallel resonance frequency of the resonator, forming the S1 mode acoustic wave forbidden band (the S1 mode is in the parallel resonance of the resonator). The frequency fp cannot propagate in the acoustic forbidden band, forming an acoustic block). Since the S1 mode cannot propagate in the third region, it is more conducive to the confinement of the acoustic wave energy, so that the Q value at fp can be improved. And as the thickness of the protruding structure increases, the dispersion curve of the second region decreases continuously, and the forbidden band is further widened, which increases the mismatch between the second region and the third region. Therefore, the thickness of the protruding structure can be selected in a specific range, which can make the acoustic impedance of the Range2 area smaller than that of the Range1 area, and at the same time, it can have a larger thickness, so that it can be beneficial to realize the Range1 area and the Range2 area. The acoustic mismatch between the regions, and the acoustic mismatch between the Range2 region and the Range3 region.

以上关于第三区的描述也适用于本发明的其他实施例，在其他实施例中不再赘述。The above description about the third region is also applicable to other embodiments of the present invention, and details are not repeated in other embodiments.

下面参照图4、图5A-9B以顶电极、底电极、凸起结构均为钼而压电层为氮化铝为例示例性说明适当选择凸起结构的厚度以相对于Range1区域降低Range2 区域的声阻抗值。4, 5A-9B, the top electrode, the bottom electrode and the bump structure are all molybdenum and the piezoelectric layer is aluminum nitride as an example to illustrate the appropriate selection of the thickness of the bump structure to reduce the Range2 region relative to the Range1 region. the acoustic impedance value.

图4为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图，其中谐振器设置有钝化层，图4中各附图标记如下：4 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, wherein the resonator is provided with a passivation layer, and the reference numerals in FIG. 4 are as follows:

210：基底，可选材料为单晶硅、石英、砷化镓或蓝宝石等。210: Substrate, the optional material is single crystal silicon, quartz, gallium arsenide or sapphire, etc.

220：声学镜，其位于基底210的上表面或嵌于基底的内部，在图4中声学镜为嵌入基底中的空腔所构成，但是声学镜也可以为布拉格反射层及其他等效形式。220 : an acoustic mirror, which is located on the upper surface of thesubstrate 210 or embedded in the interior of the substrate. In FIG. 4 , the acoustic mirror is formed by a cavity embedded in the substrate, but the acoustic mirror can also be a Bragg reflection layer or other equivalent forms.

230：底电极，其可以沉积在声学镜的上表面，并覆盖声学镜。可将底电极 130边缘刻蚀成斜面，并且该斜面与谐振器的有效区域边缘对齐，此外底电极 130的边缘还可以为阶梯状、垂直状或是其它相似的结构。底电极的材料可为：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛 (Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属，以及以上金属的合金等。230: Bottom electrode, which can be deposited on the upper surface of the acoustic mirror, and covers the acoustic mirror. The edge of thebottom electrode 130 can be etched into a bevel, and the bevel is aligned with the edge of the effective area of the resonator, and the edge of thebottom electrode 130 can also be stepped, vertical or other similar structures. The material of the bottom electrode can be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium ( Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper ( Cu), aluminum (Al), chromium (Cr), arsenic-doped gold and other similar metals, as well as alloys of the above metals.

240：压电薄膜层或压电层，可选氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等材料，也可包含上述材料的一定原子比的稀土元素掺杂材料，掺杂元素如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。240: Piezoelectric thin film layer or piezoelectric layer, optional aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3 ), quartz (Quartz), potassium niobate (KNbO3 ) or lithium tantalate (LiTaO3 ) and other materials, can also include rare earth element doping materials with a certain atomic ratio of the above materials, such as scandium (Sc), yttrium (Y), magnesium (Mg), Titanium (Ti), Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.

250：顶电极，其材料可为：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属，以及以上金属的合金等。顶电极的材料与底电极可以相同也可以不同。在图2中，顶电极上方并未设置钝化层，但是如能够理解的，也可以设置钝化层。250: Top electrode, the material of which can be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti), Osmium (Os), Magnesium (Mg), Gold (Au), Tungsten (W), Molybdenum (Mo), Platinum (Pt), Ruthenium (Ru), Iridium (Ir), Germanium (Ge) , copper (Cu), aluminum (Al), chromium (Cr), arsenic-doped gold and other similar metals, as well as alloys of the above metals. The material of the top electrode and the bottom electrode may be the same or different. In Figure 2, no passivation layer is provided over the top electrode, but as can be appreciated, a passivation layer may also be provided.

260：凸起结构，凸起结构的材料同顶电极230或底电极250或压电层240 或钝化层270。凸起解耦股260位于有效区域的边缘位置，凸起结构可以降低其所在有效区域的声阻抗。260 : a protruding structure, the material of the protruding structure is the same as thetop electrode 230 or thebottom electrode 250 or thepiezoelectric layer 240 or thepassivation layer 270 . The protrudingdecoupling strands 260 are located at the edge of the effective area, and the protruding structure can reduce the acoustic impedance of the effective area where it is located.

270：钝化层，钝化层材料包括但不限于多晶硅SiO2、Si3N4、AlN等。270: Passivation layer, the passivation layer material includes but not limited to polysilicon SiO2 , Si3 N4 , AlN and the like.

如图4所示的谐振器结构中，在顶电极250边缘Range2处沉积凸起结构。如图4所示，谐振器按照层叠状态可分为三个区域，其中第一个区域Range1为有效区域(底电极、压电层、顶电极和声学镜在谐振器的厚度方向上的重叠区域)的中心区(底电极、压电层、顶电极的重叠区)，第二个区域Range2为有效区域的边缘区(底电极、压电层、顶电极、凸起结构的重叠区)，第三个区域 Range3为外侧区域或第三区(在图4中为在凸起结构的外侧在声学镜边界的内侧，底电极、压电层的重叠区)，这三个区域的声阻抗分别表示为Z1、Z2和Z3，如图4所示。In the resonator structure shown in FIG. 4 , a raised structure is deposited at the edge Range2 of thetop electrode 250 . As shown in Figure 4, the resonator can be divided into three regions according to the stacked state, the first region Range1 is the effective region (the overlapping region of the bottom electrode, the piezoelectric layer, the top electrode and the acoustic mirror in the thickness direction of the resonator) ) of the central area (the overlapping area of the bottom electrode, the piezoelectric layer, and the top electrode), the second area Range2 is the edge area of the effective area (the overlapping area of the bottom electrode, the piezoelectric layer, the top electrode, and the raised structure), The three regions, Range3, are the outer region or the third region (in Figure 4, it is the outer side of the convex structure, the inner side of the boundary of the acoustic mirror, the overlapping region of the bottom electrode and the piezoelectric layer), and the acoustic impedances of these three regions represent the are Z1, Z2 and Z3, as shown in Figure 4.

在一个实施例中，假设Range2区域的膜层结构为：底电极230为钼且厚度为

Figure RE-GDA0003006091680000101
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000102
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000103
Figure RE-GDA0003006091680000104
凸起结构260为钼且厚度为
Figure RE-GDA0003006091680000105
钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000106
此膜层厚度的谐振器串联谐振频率fs为1.716GHz,并联谐振频率fp为 1.7675GHz，属于Band3 TX频段。In one embodiment, it is assumed that the film structure of the Range2 region is: thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000101
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000102
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000103
Figure RE-GDA0003006091680000104
The raisedstructures 260 are molybdenum and have a thickness of
Figure RE-GDA0003006091680000105
Thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000106
The resonator with this film thickness has a series resonance frequency fs of 1.716GHz and a parallel resonance frequency fp of 1.7675GHz, which belongs to the Band3 TX frequency band.

图5A为示出基于上述的膜层材料和膜层厚度的、在图4所示结构中的Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图 5A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。5A is an exemplary diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 based on the above-mentioned film material and film thickness, and the abscissa in FIG. 5A represents The horizontal wave vector, the left ordinate represents the frequency, and the right ordinate represents the acoustic impedance.

在图5A中，谐振器的并联谐振频率在图5A中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1区域和Range2区域的横向波矢分别为k1＝0.235和 k2＝0.260(横坐标辅助线)，进而可以求出该频率下Range1和Range2区域的声阻抗分别为Z1＝51.97TRayl和Z2＝48.895TRayl。图5A中可以看出，Range2区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 5A, the parallel resonance frequency of the resonator is marked as fp (the auxiliary line of the ordinate) in Fig. 5A, and the transverse wave vectors of the parallel resonance frequency in the Range1 region and the Range2 region are k1=0.235 and k2=0.260 (horizontal Coordinate auxiliary line), and then the acoustic impedances of the Range1 and Range2 regions at this frequency can be obtained as Z1=51.97TRayl and Z2=48.895TRayl, respectively. It can be seen in Fig. 5A that the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby improving the Q value at the parallel resonance frequency.

图5B示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000111
压电层240 为氮化铝且厚度为
Figure RE-GDA0003006091680000112
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000113
凸起结构260为钼、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000114
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系，可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗出现一个先下降后上升的趋势。在图5B中，凸起结构的厚度取了0-1.4μm之间以0.2μm为间隔的多个点。在图5B中，可以看到，相对于基于设置凸起结构增大Range2区域的声阻抗(图5B中凸起结构的厚度大于1.2μm)，基于设置凸起结构降低Range2区域的声阻抗值而获得Range2区域与Range1区域的阻抗值差值更大方面的效果更显著；而且，相对于例如设置凸起结构的厚度大于1.2μm而增大Range2区域的声阻抗值，设置凸起结构降低Range2区域的声阻抗值的方案的凸起结构的厚度可以更低，这也有助于谐振器的小型化。FIG. 5B shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000111
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000112
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000113
The protrudingstructure 260 is molybdenum, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000114
), the relationship between the acoustic impedance value of the Range2 region of the resonator in Figure 4 at the parallel resonance frequency and the thickness of the convex structure, it can be seen that with the increase of the thickness of the convex structure (OB), the Range2 The acoustic impedance of the area shows a trend of first decreasing and then increasing. In FIG. 5B , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm with an interval of 0.2 μm. In FIG. 5B , it can be seen that, compared with increasing the acoustic impedance of the Range2 region based on the provision of the protruding structure (the thickness of the protruding structure in FIG. 5B is greater than 1.2 μm), the acoustic impedance value of the Range2 region is reduced based on the provision of the protruding structure and The effect of obtaining a larger impedance value difference between the Range2 region and the Range1 region is more significant; and, compared to, for example, setting the thickness of the protruding structure greater than 1.2 μm to increase the acoustic impedance value of the Range2 region, setting the protruding structure reduces the Range2 region. The thickness of the protruding structure of the scheme of the acoustic impedance value can be lower, which also contributes to the miniaturization of the resonator.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图5B中，0.05-1μm),进一步的，使得Range2区域的声阻抗小于Range1区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高 Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 5B, 0.05-1 μm), and further, the acoustic impedance of the Range2 area is smaller than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent or reduce the leakage of acoustic wave energy to the outside the effective area, thereby increasing the Q value.

在另一个实施例中，假设Range2区域的膜层结构为：底电极230为钼且厚度为

Figure RE-GDA0003006091680000115
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000116
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000117
凸起结构260为钼且厚度为
Figure RE-GDA0003006091680000118
钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000119
Figure RE-GDA00030060916800001110
此膜层厚度的谐振器串联谐振频率fs为1.8159GHz,并联谐振频率fp为 1.87GHz，属于Band3 RX频段。In another embodiment, it is assumed that the film structure of the Range2 region is: thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000115
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000116
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000117
The raisedstructures 260 are molybdenum and have a thickness of
Figure RE-GDA0003006091680000118
Thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000119
Figure RE-GDA00030060916800001110
The resonator with this film thickness has a series resonance frequency fs of 1.8159GHz and a parallel resonance frequency fp of 1.87GHz, which belongs to the Band3 RX frequency band.

图6A为示出基于上述的膜层材料和膜层厚度的、在图4所示结构中的 Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图 6A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。6A is an exemplary diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 based on the above-mentioned film material and film thickness, and the abscissa in FIG. 6A represents The horizontal wave vector, the left ordinate represents the frequency, and the right ordinate represents the acoustic impedance.

在图6A中，谐振器的并联谐振频率在图6A中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1区域和Range2区域的横向波矢分别为k1＝0.245和 k2＝0.285(横坐标辅助线)，进而可以求出该频率下Range1区域和Range2区域的声阻抗分别为Z1＝51.22TRayl和Z2＝47.031TRayl。图6A中可以看出，Range2 区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 6A, the parallel resonance frequency of the resonator is marked as fp (the ordinate auxiliary line) in Fig. 6A, and the transverse wave vectors of the parallel resonance frequency in the Range1 region and the Range2 region are k1=0.245 and k2=0.285 (horizontal Coordinate auxiliary line), and then the acoustic impedances of the Range1 region and the Range2 region at this frequency can be obtained as Z1=51.22TRayl and Z2=47.031TRayl, respectively. It can be seen in FIG. 6A that the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby increasing the Q value at the parallel resonance frequency.

图6B示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000121
压电层240 为氮化铝且厚度为
Figure RE-GDA0003006091680000122
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000123
凸起结构260为钼、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000124
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系，可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗出现一个先下降后上升的趋势。在图6B中，凸起结构的厚度取了0-1.4μm之间以0.2μm为间隔的多个点。不过，在图6B中，可以看到，在上述的厚度范围内并不存在随着厚度变化而增大Range2区域的声阻抗的情况。实际上，在图6B中，在0.05μm-1μm的厚度范围内，Range2区域的声阻抗相对于Range1区域的声阻抗有较大的下降。FIG. 6B shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000121
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000122
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000123
The protrudingstructure 260 is molybdenum, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000124
), the relationship between the acoustic impedance value of the Range2 region of the resonator in Figure 4 at the parallel resonance frequency and the thickness of the convex structure, it can be seen that with the increase of the thickness of the convex structure (OB), the Range2 The acoustic impedance of the area shows a trend of first decreasing and then increasing. In FIG. 6B , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm with an interval of 0.2 μm. However, in FIG. 6B , it can be seen that the acoustic impedance of the Range2 region does not increase with the thickness change within the above-mentioned thickness range. In fact, in FIG. 6B , in the thickness range of 0.05 μm-1 μm, the acoustic impedance of the Range2 region has a greater decrease relative to the acoustic impedance of the Range1 region.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图6B中，0.05-1μm),进一步的，使得Range2区域的声阻抗小于Range1区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高 Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 6B, 0.05-1 μm), and further, the acoustic impedance of the Range2 area is less than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent or reduce the leakage of acoustic wave energy to the outside the effective area, thereby increasing the Q value.

从图6B可以看出，从增加Range2区域与Range1区域的声阻抗不匹配度来看，并非凸起结构的厚度越大越好。As can be seen from FIG. 6B , from the perspective of increasing the acoustic impedance mismatch between the Range2 region and the Range1 region, it is not that the larger the thickness of the protruding structure, the better.

在再一个实施例中，假设Range2区域的膜层结构为：底电极230为钼且厚度为

Figure RE-GDA0003006091680000125
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000126
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000127
凸起结构260为钼且厚度为
Figure RE-GDA0003006091680000128
钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000129
Figure RE-GDA00030060916800001210
此膜层厚度的谐振器串联谐振频率fs为1.926GHz,并联谐振频率fp为 1.98GHz，属于Band1 TX频段。In yet another embodiment, it is assumed that the film structure of the Range2 region is: thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000125
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000126
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000127
The raisedstructures 260 are molybdenum and have a thickness of
Figure RE-GDA0003006091680000128
Thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000129
Figure RE-GDA00030060916800001210
The resonator with this film thickness has a series resonance frequency fs of 1.926 GHz and a parallel resonance frequency fp of 1.98 GHz, which belongs to the Band1 TX frequency band.

图7A为示出基于上述的膜层材料和膜层厚度的、在图4所示结构中的 Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图 7A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。7A is an exemplary diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 based on the above-mentioned film material and film thickness, and the abscissa in FIG. 7A represents The horizontal wave vector, the left ordinate represents the frequency, and the right ordinate represents the acoustic impedance.

在图7A中，谐振器的并联谐振频率在图7A中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1和Range2区域的横向波矢分别为k1＝0.25和k2＝0.275 (横坐标辅助线)，进而可以求出该频率下Range1和Range2区域的声阻抗分别为Z1＝52.231TRayl和Z2＝49.2TRayl。图7A中可以看出，Range2区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 7A, the parallel resonance frequency of the resonator is marked as fp (the auxiliary line of the ordinate) in Fig. 7A, and the transverse wave vectors of the parallel resonance frequency in the Range1 and Range2 regions are k1=0.25 and k2=0.275 (the abscissa), respectively. Auxiliary line), and then the acoustic impedances of the Range1 and Range2 regions at this frequency can be obtained as Z1=52.231TRayl and Z2=49.2TRayl, respectively. It can be seen in Fig. 7A that the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby increasing the Q value at the parallel resonance frequency.

图7B示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000131
压电层240 为氮化铝且厚度为
Figure RE-GDA0003006091680000132
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000133
凸起结构260为钼、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000134
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系，可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗出现一个先下降后上升再下降的趋势。在图7B中，凸起结构的厚度取了0-1.4μm之间以0.2μm为间隔的多个点。在图7B中，可以看到，在上述的厚度范围内并不存在随着厚度变化而增大Range2区域的声阻抗的情况。实际上，在图7B中，在0.05μm-1μm的厚度范围内，Range2区域的声阻抗相对于Range1区域的声阻抗有较大的下降。FIG. 7B shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000131
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000132
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000133
The protrudingstructure 260 is molybdenum, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000134
), the relationship between the acoustic impedance value of the Range2 region of the resonator in Figure 4 at the parallel resonance frequency and the thickness of the convex structure, it can be seen that with the increase of the thickness of the convex structure (OB), the Range2 The acoustic impedance of the area shows a trend of first decreasing, then increasing and then decreasing. In FIG. 7B , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm with an interval of 0.2 μm. In FIG. 7B , it can be seen that the acoustic impedance of the Range2 region does not increase with the thickness variation within the above-mentioned thickness range. In fact, in FIG. 7B , in the thickness range of 0.05 μm-1 μm, the acoustic impedance of the Range2 region has a greater decrease relative to the acoustic impedance of the Range1 region.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图7B中，0.05-1μm),进一步的，使得Range2区域的声阻抗小于Range1区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高 Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 7B, 0.05-1 μm), and further, the acoustic impedance of the Range2 area is less than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent or reduce the leakage of acoustic energy to the outside the effective area, thereby increasing the Q value.

从图7B可以看出，从增加Range2区域与Range1区域的声阻抗不匹配度来看，并非凸起结构的厚度越大越好。As can be seen from FIG. 7B , from the perspective of increasing the acoustic impedance mismatch between the Range2 region and the Range1 region, it is not that the larger the thickness of the protruding structure, the better.

在还一个实施例中，假设Range2区域的膜层结构为：底电极230为钼且厚度为

Figure RE-GDA0003006091680000135
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000136
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000137
凸起结构260为钼且厚度为
Figure RE-GDA0003006091680000138
钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000139
Figure RE-GDA00030060916800001310
此膜层厚度的谐振器串联谐振频率fs为2.5138GHz,并联谐振频率fp为 2.567GHz，属于Band7 TX频段。In yet another embodiment, it is assumed that the film layer structure of the Range2 region is: thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000135
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000136
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000137
The raisedstructures 260 are molybdenum and have a thickness of
Figure RE-GDA0003006091680000138
Thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000139
Figure RE-GDA00030060916800001310
The resonator with this film thickness has a series resonance frequency fs of 2.5138GHz and a parallel resonance frequency fp of 2.567GHz, which belongs to the Band7 TX frequency band.

图8A为示出基于上述的膜层材料和膜层厚度的、在图4所示结构中的 Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图 8A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。FIG. 8A is an exemplary diagram showing the dispersion curve and the acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 based on the above-mentioned film material and film thickness, and the abscissa in FIG. 8A represents The horizontal wave vector, the left ordinate represents the frequency, and the right ordinate represents the acoustic impedance.

在图8A中，谐振器的并联谐振频率在图8A中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1和Range2区域的横向波矢分别为k1＝0.295和 k2＝0.330(横坐标辅助线)，进而可以求出该频率下Range1和Range2区域的声阻抗分别为Z1＝60.212TRayl和Z2＝55.429TRayl。图8A中可以看出，Range2区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 8A, the parallel resonance frequency of the resonator is marked as fp in Fig. 8A (the auxiliary line of the ordinate), and the transverse wave vectors of the parallel resonance frequency in the Range1 and Range2 regions are k1=0.295 and k2=0.330 (the abscissa), respectively. Auxiliary line), and then the acoustic impedances of the Range1 and Range2 regions at this frequency can be obtained as Z1=60.212TRayl and Z2=55.429TRayl, respectively. It can be seen in Fig. 8A that the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby increasing the Q value at the parallel resonance frequency.

图8B示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000141
压电层240 为氮化铝且厚度为
Figure RE-GDA0003006091680000142
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000143
凸起结构260为钼、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000144
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系，可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗出现一个先下降后略上升再下降的趋势。在图8B中，凸起结构的厚度取了0-1.4μm之间以0.2μm为间隔的多个点。在图8B中，可以看到，在上述的厚度范围内并不存在随着厚度变化而增大Range2区域的声阻抗的情况。实际上，在图8B中，在大于0.05μm 的厚度范围内，Range2区域的声阻抗相对于Range1区域的声阻抗有较大的下降。FIG. 8B shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000141
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000142
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000143
The protrudingstructure 260 is molybdenum, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000144
), the relationship between the acoustic impedance value of the Range2 region of the resonator in Figure 4 at the parallel resonance frequency and the thickness of the convex structure, it can be seen that with the increase of the thickness of the convex structure (OB), the Range2 The acoustic impedance of the area shows a trend of first decreasing, then slightly increasing and then decreasing. In FIG. 8B , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm at intervals of 0.2 μm. In FIG. 8B , it can be seen that the acoustic impedance of the Range2 region does not increase with the thickness change within the above-mentioned thickness range. In fact, in FIG. 8B , in the thickness range greater than 0.05 μm, the acoustic impedance of the Range2 region has a larger drop relative to the acoustic impedance of the Range1 region.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图8B中，大于0.05μm),进一步的，使得Range2区域的声阻抗小于Range1 区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 8B , greater than 0.05 μm), and further, the acoustic impedance of the Range2 area is less than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent or reduce the leakage of acoustic wave energy to the outside the effective area, thereby increasing the Q value.

在又一个实施例中，假设Range2区域的膜层结构为：底电极230为钼且厚度为

Figure RE-GDA0003006091680000145
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000146
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000147
凸起结构260为钼且厚度为
Figure RE-GDA0003006091680000148
钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000149
Figure RE-GDA00030060916800001410
此膜层厚度的谐振器串联谐振频率fs为2.6205GHz,并联谐振频率fp为 2.681GHz，属于Band7 RX频段。In yet another embodiment, it is assumed that the film structure of the Range2 region is: thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000145
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000146
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000147
The raisedstructures 260 are molybdenum and have a thickness of
Figure RE-GDA0003006091680000148
Thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000149
Figure RE-GDA00030060916800001410
The resonator with this film thickness has a series resonance frequency fs of 2.6205GHz and a parallel resonance frequency fp of 2.681GHz, which belongs to the Band7 RX frequency band.

图9A为示出基于上述的膜层材料和膜层厚度的、在图4所示结构中的 Range1区域以及Range2区域内的S1模式的色散曲线以及声阻抗的示例图，图9A中横坐标代表横向的波矢，左侧纵坐标代表频率，右侧纵坐标代表声阻抗。9A is an exemplary diagram showing the dispersion curve and acoustic impedance of the S1 mode in the Range1 region and the Range2 region in the structure shown in FIG. 4 based on the above-mentioned film material and film thickness, and the abscissa in FIG. 9A represents The horizontal wave vector, the left ordinate represents the frequency, and the right ordinate represents the acoustic impedance.

在图9A中，谐振器的并联谐振频率在图9A中标出为fp(纵坐标辅助线)，并联谐振频率处在Range1和Range2区域的横向波矢分别为k1＝0.310和 k2＝0.370(横坐标辅助线)，进而可以求出该频率下Range1和Range2区域的声阻抗分别为Z1＝59.026TRayl和Z2＝51.65TRayl。图9A中可以看出，Range2区域的声阻抗小于Range1区域的声阻抗，这可以有效阻止或减少声波的横向泄漏，从而提高并联谐振频率处的Q值。In Fig. 9A, the parallel resonance frequency of the resonator is marked as fp (the auxiliary line of the ordinate) in Fig. 9A, and the transverse wave vectors of the parallel resonance frequency in the Range1 and Range2 regions are k1=0.310 and k2=0.370 (the abscissa), respectively. Auxiliary line), and then the acoustic impedances of the Range1 and Range2 regions at this frequency can be obtained as Z1=59.026TRayl and Z2=51.65TRayl, respectively. As can be seen in FIG. 9A , the acoustic impedance of the Range2 region is smaller than that of the Range1 region, which can effectively prevent or reduce the lateral leakage of acoustic waves, thereby improving the Q value at the parallel resonance frequency.

图9B示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000151
压电层240 为氮化铝且厚度为
Figure RE-GDA0003006091680000152
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000153
凸起结构260为钼、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000154
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系，可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗出现一个先下降后略上升再下降的趋势。在图9B中，凸起结构的厚度取了0-1.4μm之间以0.2μm为间隔的多个点。在图9B中，可以看到，在上述的厚度范围内并不存在随着厚度变化而增大Range2区域的声阻抗的情况。实际上，在图9B中，在大于0.05μm 的厚度范围内，Range2区域的声阻抗相对于Range1区域的声阻抗有较大的下降。FIG. 9B shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000151
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000152
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000153
The protrudingstructure 260 is molybdenum, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000154
), the relationship between the acoustic impedance value of the Range2 region of the resonator in Figure 4 at the parallel resonance frequency and the thickness of the convex structure, it can be seen that with the increase of the thickness of the convex structure (OB), the Range2 The acoustic impedance of the area shows a trend of first decreasing, then slightly increasing and then decreasing. In FIG. 9B , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm with an interval of 0.2 μm. In FIG. 9B , it can be seen that the acoustic impedance of the Range2 region does not increase with the thickness change within the above-mentioned thickness range. In fact, in FIG. 9B , in the thickness range greater than 0.05 μm, the acoustic impedance of the Range2 region is greatly reduced relative to the acoustic impedance of the Range1 region.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如在图9B中，大于0.05μm),进一步的，使得Range2区域的声阻抗小于Range1 区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, in FIG. 9B , greater than 0.05 μm), and further, the acoustic impedance of the Range2 area is less than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent or reduce the leakage of acoustic energy to the outside the effective area, thereby increasing the Q value.

图3A-图9B示出的示例对应于前面提到的第二种情况：凸起结构选取的材料的密度大于Range1区域的平均密度。The examples shown in FIGS. 3A-9B correspond to the second case mentioned above: the density of the material selected by the protruding structure is greater than the average density of the Range1 region.

图10则对应于前面提及的第一种情况：凸起结构选取的材料密度小于 Range1区域的平均密度。图10为示出在图4所示结构中凸起结构的厚度与 range2区域的声阻抗之间的关系图。Figure 10 corresponds to the first case mentioned above: the density of the material selected for the protruding structure is lower than the average density of the Range1 region. FIG. 10 is a graph showing the relationship between the thickness of the protruding structure and the acoustic impedance of the range2 region in the structure shown in FIG. 4 .

图10对应的膜层结构中，凸起结构为氮化铝。In the film layer structure corresponding to FIG. 10 , the protruding structure is aluminum nitride.

具体的，图10示出了基于膜层结构(底电极230为钼且厚度为

Figure RE-GDA0003006091680000155
压电层240为氮化铝且厚度为
Figure RE-GDA0003006091680000156
顶电极250为钼且厚度为
Figure RE-GDA0003006091680000157
凸起结构260为氮化铝、钝化层270为氮化铝且厚度为
Figure RE-GDA0003006091680000158
)的、图4中的谐振器的Range2区域在并联谐振频率时的声阻抗值与凸起结构的厚度之间的关系。此膜层厚度的谐振器串联谐振频率fs为1.8159GHz,并联谐振频率fp为1.87GHz，属于Band3 RX频段。可以看出，随着凸起结构(OB)的厚度的增加，Range2区域的声阻抗随之下降。在图10中，凸起结构的厚度取了0-1.4μm之间以0.2 μm为间隔的多个点。在图10中，可以看到，在上述的厚度范围内并不存在随着厚度变化而增大Range2区域的声阻抗的情况。实际上，在图10中，在大于 0.05μm的厚度范围内，Range2区域的声阻抗相对于Range1区域的声阻抗有较大的下降。Specifically, FIG. 10 shows the structure based on the film layer (thebottom electrode 230 is molybdenum and the thickness is
Figure RE-GDA0003006091680000155
Thepiezoelectric layer 240 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000156
Thetop electrode 250 is molybdenum and has a thickness of
Figure RE-GDA0003006091680000157
The protrudingstructure 260 is aluminum nitride, thepassivation layer 270 is aluminum nitride and has a thickness of
Figure RE-GDA0003006091680000158
), the relationship between the acoustic impedance value of the Range2 region of the resonator in FIG. 4 at the parallel resonance frequency and the thickness of the protruding structure. The resonator with this film thickness has a series resonance frequency fs of 1.8159GHz and a parallel resonance frequency fp of 1.87GHz, which belongs to the Band3 RX frequency band. It can be seen that with the increase of the thickness of the convex structure (OB), the acoustic impedance of the Range2 region decreases accordingly. In FIG. 10 , the thickness of the protruding structure is taken as a plurality of points between 0 and 1.4 μm with an interval of 0.2 μm. In FIG. 10 , it can be seen that the acoustic impedance of the Range2 region does not increase with the thickness change within the above-mentioned thickness range. In fact, in FIG. 10 , in the thickness range greater than 0.05 μm, the acoustic impedance of the Range2 region is greatly reduced relative to the acoustic impedance of the Range1 region.

基于以上，在本实施例中，可以选择凸起结构的厚度以使得Range2区域的声阻抗小于Range1区域的声阻抗。具体的，凸起结构在一定厚度范围内(例如不小于0.2μm，在图10中，例如大于0.05μm),进一步的，使得Range2区域的声阻抗小于Range1区域的声阻抗0.2％以上，以阻止或减少声波能量泄露到有效区域外侧，从而提高Q值。Based on the above, in this embodiment, the thickness of the protruding structure may be selected so that the acoustic impedance of the Range2 region is smaller than that of the Range1 region. Specifically, the protruding structure is within a certain thickness range (for example, not less than 0.2 μm, in FIG. 10 , for example, greater than 0.05 μm), and further, the acoustic impedance of the Range2 area is smaller than the acoustic impedance of the Range1 area by more than 0.2%, so as to prevent Or reduce the leakage of sound wave energy to the outside of the effective area, thereby increasing the Q value.

从例如图3C，图5B，图6B，图7B可以看出，简单的认为通过设置凸起结构就可以增大凸起结构所在区域的声阻抗，在实际中却存在即使设置了凸起结构，也存在凸起结构所在区域的声阻抗与凸起结构内侧的区域的声阻抗难以或不能形成有效的声学不匹配度的情况。从例如图3C，图5B，图6B，图7B，图 8B，图9B和图10可以看出，设置凸起结构并不意味着会使得凸起结构所在区域的声阻抗的值会增加，实际上，在很多情况下，会导致凸起结构所在区域的声阻抗的值下降。It can be seen from, for example, Fig. 3C, Fig. 5B, Fig. 6B, and Fig. 7B that it is simply believed that the acoustic impedance of the region where the raised structure is located can be increased by simply providing the raised structure, but in practice, even if the raised structure is provided, There is also a situation where the acoustic impedance of the region where the protruding structure is located and the acoustic impedance of the region inside the protruding structure are difficult or unable to form an effective acoustic mismatch. It can be seen from, for example, Fig. 3C, Fig. 5B, Fig. 6B, Fig. 7B, Fig. 8B, Fig. 9B and Fig. 10 that the arrangement of the protruding structures does not mean that the value of the acoustic impedance in the region where the protruding structures are located will increase. On the other hand, in many cases, the value of the acoustic impedance in the region where the raised structure is located will decrease.

在本发明中，基于设置凸起结构(选择某些范围的厚度)存在导致凸起结构所在区域的声阻抗下降的事实，基于不同的膜层条件选择预定范围厚度内的凸起结构，可以保证设置凸起结构则凸起结构所在区域的声阻抗下降，从而不存在现有技术中以为设置了凸起结构从而凸起结构所在区域的声阻抗上升但是实际上凸起结构所在区域的声阻抗下降这样的情况。在本发明中，基于设置凸起结构(选择某些范围的厚度)存在导致凸起结构所在区域的声阻抗下降的事实，基于不同的膜层条件可以选择预定范围厚度内的凸起结构，可以较为精确的控制凸起结构所在区域的声阻抗的下降值或下降范围，这有助于在Range1区域与Range2区域之间形成有效的声学不匹配结构，这能阻止或减少声波能量泄露到有效区域的外侧，从而可以提高并联谐振频率fp处的谐振器Q值。In the present invention, based on the fact that setting the protruding structure (selecting a certain range of thickness) causes the acoustic impedance of the region where the protruding structure is located to decrease, and selecting the protruding structure within a predetermined range of thickness based on different film layer conditions, it can be guaranteed If the protruding structure is provided, the acoustic impedance of the area where the protruding structure is located decreases, so there is no prior art that the protruding structure is provided so that the acoustic impedance of the area where the protruding structure is located increases, but in fact the acoustic impedance of the area where the protruding structure is located decreases. such a situation. In the present invention, based on the fact that setting the protruding structure (selecting a certain range of thickness) causes the acoustic impedance of the region where the protruding structure is located to decrease, the protruding structure within a predetermined range of thickness can be selected based on different film conditions. Precisely control the drop value or drop range of the acoustic impedance in the area where the raised structure is located, which helps to form an effective acoustic mismatch structure between the Range1 area and the Range2 area, which can prevent or reduce the leakage of acoustic energy to the effective area , so that the Q value of the resonator at the parallel resonance frequency fp can be improved.

在例如图3C，图5B，图6B，图7B所示的Range2区域的声阻抗随着凸起结构的厚度的增加存在下降后上升的情况，其对应的膜层结构中，压电层的厚度与Range2区域的总膜层厚度的比值在35％以上的范围内。For example, as shown in Fig. 3C, Fig. 5B, Fig. 6B, and Fig. 7B, the acoustic impedance of the Range2 region decreases and then increases with the increase of the thickness of the convex structure. In the corresponding film structure, the thickness of the piezoelectric layer The ratio to the total film thickness of the Range2 region is in the range of 35% or more.

在例如图8B和图9B所示的Range2区域的声阻抗随着凸起结构的厚度的增加存在下降后略上升而后下降或者基本随着凸起结构的厚度的增加存在下降的情况，其对应的膜层结构中，压电层的厚度与Range2区域的总膜层厚度的比值在小于35％的范围内。For example, in the case where the acoustic impedance of the Range2 region shown in FIG. 8B and FIG. 9B decreases with the increase of the thickness of the convex structure, then slightly increases and then decreases, or basically decreases with the increase of the thickness of the convex structure, the corresponding In the film structure, the ratio of the thickness of the piezoelectric layer to the total film thickness of the Range2 region is in the range of less than 35%.

在本发明所示的实施例中，凸起结构设置在顶电极的上方，但是本发明不限于此。凸起结构也可以设置在由顶电极、压电层和底电极构成的三明治膜层结构中的其他位置，例如可以设置在底电极与压电层之间，这些也在本发明的保护范围之内。In the embodiment shown in the present invention, the protruding structure is disposed above the top electrode, but the present invention is not limited thereto. The protruding structure can also be arranged at other positions in the sandwich film structure composed of the top electrode, the piezoelectric layer and the bottom electrode, for example, it can be arranged between the bottom electrode and the piezoelectric layer, which is also within the protection scope of the present invention. Inside.

在本发明中：Band3 TX频段指的是1.71GHz-1.785GHz，Band3 RX频段指的是1.805GHz-1.880GHz；Band1 TX频段指的是1.92GHz-1.98GHz；Band7 TX频段指的是2.5GHz-2.57GHz，Band7 RX频段指的是2.62GHz-2.69GHz。In the present invention: Band3 TX frequency band refers to 1.71GHz-1.785GHz, Band3 RX frequency band refers to 1.805GHz-1.880GHz; Band1 TX frequency band refers to 1.92GHz-1.98GHz; Band7 TX frequency band refers to 2.5GHz- 2.57GHz, Band7 RX frequency band refers to 2.62GHz-2.69GHz.

在本发明中，对于凸起结构的材料密度小于中心区的平均密度的情况，在本发明的一个实施例中，所述谐振器的串联谐振频率或并联谐振频率在Band3 RX 频段范围内；且所述凸起结构的厚度不小于0.05μm。In the present invention, in the case where the material density of the protruding structure is less than the average density of the central region, in one embodiment of the present invention, the series resonance frequency or the parallel resonance frequency of the resonator is within the Band3 RX frequency band; and The thickness of the protruding structures is not less than 0.05 μm.

在本发明中，对于凸起结构的材料密度大于中心区的平均密度的情况，在本发明的一个实施例中，谐振器的串联谐振频率或并联谐振频率在Band3 TX或 Band3 RX或Band1TX频段范围内；且凸起结构的厚度在0.05μm-1μm的范围内。In the present invention, for the case where the material density of the protruding structure is greater than the average density of the central region, in one embodiment of the present invention, the series resonance frequency or the parallel resonance frequency of the resonator is in the Band3 TX or Band3 RX or Band1TX frequency band range and the thickness of the protruding structure is in the range of 0.05 μm-1 μm.

在本发明中，对于凸起结构的材料密度大于中心区的平均密度的情况，在本发明的一个实施例中，谐振器的串联谐振频率或并联谐振频率在Band7 TX或 Band7 RX频段范围内；且凸起结构的厚度不小于0.05μm。In the present invention, for the case where the material density of the protruding structure is greater than the average density of the central region, in one embodiment of the present invention, the series resonance frequency or the parallel resonance frequency of the resonator is within the Band7 TX or Band7 RX frequency band; And the thickness of the protruding structure is not less than 0.05 μm.

需要指出的是，在本发明中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本发明的保护范围之内。It should be pointed out that, in the present invention, each numerical range, except that it is clearly indicated that it does not include the endpoint value, can be the endpoint value, and can also be the median value of each numerical range, and these are all within the protection scope of the present invention. .

在本发明中，上和下是相对于谐振器的基底的底面而言的，对于一个部件，其靠近该底面的一侧为下侧，远离该底面的一侧为上侧。In the present invention, upper and lower are relative to the bottom surface of the base of the resonator. For a component, the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.

在本发明中，内和外是相对于谐振器的有效区域的中心(即有效区域中心) 在横向方向或者径向方向上而言的，一个部件的靠近有效区域中心的一侧或一端为内侧或内端，而该部件的远离有效区域中心的一侧或一端为外侧或外端。对于一个参照位置而言，位于该位置的内侧表示在横向方向或径向方向上处于该位置与有效区域中心之间，位于该位置的外侧表示在横向方向或径向方向上比该位置更远离有效区域中心。In the present invention, inner and outer are relative to the center of the effective area of the resonator (ie, the center of the effective area) in the lateral direction or the radial direction, and one side or one end of a component close to the center of the effective area is the inner side or inner end, and the side or end of the part away from the center of the active area is the outer or outer end. For a reference position, being located inside the position means being between the position and the center of the active area in the lateral or radial direction, and being located outside of the position means being farther from the position in the lateral or radial direction than the position Effective regional center.

如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于形成滤波器或电子设备。这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。As can be appreciated by those skilled in the art, BAW resonators according to the present invention may be used to form filters or electronic devices. The electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

基于以上，本发明提出了如下技术方案：Based on the above, the present invention proposes the following technical solutions:

1、一种体声波谐振器，包括：1. A bulk acoustic wave resonator, comprising:

基底；base;

声学镜；acoustic mirror;

底电极；bottom electrode;

顶电极；和top electrode; and

压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,

其中：in:

声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成谐振器的有效区域；The overlapping area of the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an effective area of the resonator;

所述谐振器还包括设置在有效区域内的凸起结构，所述凸起结构沿有效区域的边缘设置；The resonator further includes a raised structure disposed in the effective area, the raised structure disposed along the edge of the effective area;

所述凸起结构、声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成有效区域的边缘区，所述有效区域在水平方向上处于有效区域边缘部内侧的区域为有效区域的中心区；The overlapping area of the convex structure, the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an edge area of the effective area, the effective area being located inside the edge of the effective area in the horizontal direction. The area is the central area of the effective area;

所述谐振器在中心区内的膜层结构具有第一声阻抗，所述谐振器在边缘区内的膜层结构具有第二声阻抗，所述凸起结构具有预定厚度以使得所述第二声阻抗小于所述第一声阻抗。The film layer structure in the central region of the resonator has a first acoustic impedance, the film layer structure in the edge region of the resonator has a second acoustic impedance, and the raised structure has a predetermined thickness such that the second acoustic impedance is The acoustic impedance is smaller than the first acoustic impedance.

2、根据1所述的谐振器，其中：2. The resonator according to 1, wherein:

所述第一声阻抗与第二声阻抗之间的差值不小于第一声阻抗的0.2％。The difference between the first acoustic impedance and the second acoustic impedance is not less than 0.2% of the first acoustic impedance.

3、根据1所述的谐振器，其中：3. The resonator according to 1, wherein:

所述谐振器还包括在水平方向上处于边缘区的外侧与声学镜的边界之间的第三区，所述谐振器在顶电极的非电极连接端的第三区内的膜层结构具有S1模式声波禁带。The resonator further includes a third region in the horizontal direction between the outer side of the edge region and the boundary of the acoustic mirror, and the film layer structure of the resonator in the third region of the non-electrode connection end of the top electrode has an S1 mode Sonic band gap.

4、根据1-3中任一项所述的谐振器，其中：4. The resonator of any one of 1-3, wherein:

所述凸起结构的材料密度小于中心区的平均密度。The material density of the raised structures is less than the average density of the central region.

5、根据4所述的谐振器，其中：5. The resonator according to 4, wherein:

所述谐振器的串联谐振频率或并联谐振频率在Band3 RX频段范围内；且the series resonant frequency or the parallel resonant frequency of the resonator is within the Band3 RX frequency band; and

所述凸起结构的厚度不小于0.05μm。The thickness of the protruding structures is not less than 0.05 μm.

6、根据5所述的谐振器，其中：6. The resonator according to 5, wherein:

所述谐振器不包括位于覆盖顶电极的钝化层，所述凸起结构的材料与压电层的材料相同；或者the resonator does not include a passivation layer overlying the top electrode, the raised structure is of the same material as the piezoelectric layer; or

所述谐振器还包括覆盖顶电极的钝化层，所述凸起结构的材料与所述钝化层的材料相同。The resonator further includes a passivation layer covering the top electrode, and the material of the protruding structure is the same as that of the passivation layer.

7、根据6所述的谐振器，其中：7. The resonator according to 6, wherein:

顶电极与底电极的材料为钼，压电层的材料为氮化铝或掺杂氮化铝，凸起结构的材料为氮化铝或掺杂氮化铝。The material of the top electrode and the bottom electrode is molybdenum, the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride, and the material of the protruding structure is aluminum nitride or doped aluminum nitride.

8、根据1-3中任一项所述的谐振器，其中：8. The resonator of any one of 1-3, wherein:

所述凸起结构的材料密度大于中心区的平均密度。The material density of the raised structures is greater than the average density of the central region.

9、根据8所述的谐振器，其中：9. The resonator of 8, wherein:

凸起结构的材料为钨。The material of the protruding structure is tungsten.

10、根据9所述的谐振器，其中：10. The resonator according to 9, wherein:

顶电极、底电极和凸起结构的材料为钨，压电层的材料为氮化铝或掺杂氮化铝；且The material of the top electrode, the bottom electrode and the protruding structure is tungsten, and the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride; and

凸起结构的厚度在0.04μm-0.14μm的范围内。The thickness of the protruding structures is in the range of 0.04 μm-0.14 μm.

11、根据8所述的谐振器，其中：11. The resonator according to 8, wherein:

谐振器的串联谐振频率或并联谐振频率在Band3 TX或Band3 RX，或Band1 TX频段范围内；The series resonance frequency or parallel resonance frequency of the resonator is within the Band3 TX or Band3 RX, or Band1 TX frequency band;

凸起结构的厚度在0.05μm-1μm的范围内。The thickness of the protruding structure is in the range of 0.05 μm-1 μm.

12、根据8所述的谐振器，其中：12. The resonator of 8, wherein:

谐振器的串联谐振频率或并联谐振频率在Band7 TX或Band7 RX频段范围的范围内；The series resonant frequency or parallel resonant frequency of the resonator is within the range of Band7 TX or Band7 RX frequency band;

凸起结构的厚度不小于0.05μm。The thickness of the protruding structures is not less than 0.05 μm.

13、根据11或12所述的谐振器，其中：13. A resonator according to 11 or 12, wherein:

凸起结构的材料为钼。The material of the raised structure is molybdenum.

14、根据13所述的谐振器，其中：14. The resonator of 13, wherein:

顶电极、底电极和凸起结构的材料为钼，压电层的材料为氮化铝或掺杂氮化铝。The material of the top electrode, the bottom electrode and the protruding structure is molybdenum, and the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride.

15、根据14所述的谐振器，其中：15. The resonator of 14, wherein:

所述谐振器在所述有效区域内的膜层结构包括覆盖顶电极的钝化层，所述钝化层为氮化铝层；或者The film layer structure of the resonator in the effective area includes a passivation layer covering the top electrode, and the passivation layer is an aluminum nitride layer; or

所述谐振器在所述有效区域内的膜层结构不包括覆盖顶电极的钝化层。The film layer structure of the resonator in the effective area does not include a passivation layer covering the top electrode.

16、根据1-3中任一项所述的谐振器，其中：16. The resonator of any of 1-3, wherein:

所述凸起结构设置在顶电极的上方；或者The protruding structure is disposed above the top electrode; or

所述凸起结构设置在底电极与压电层之间。The protruding structure is disposed between the bottom electrode and the piezoelectric layer.

17、一种滤波器，包括根据1-16中任一项所述的体声波谐振器。17. A filter comprising the bulk acoustic wave resonator of any one of 1-16.

18、一种电子设备，包括根据17所述的滤波器或者根据1-17中任一项所述的谐振器。18. An electronic device comprising the filter according to 17 or the resonator according to any one of 1-17.

尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that changes may be made to these embodiments without departing from the principle and spirit of the invention, the scope of which is determined by It is defined by the appended claims and their equivalents.

Claims (18)

Translated fromChinese
1.一种体声波谐振器，包括：1. A bulk acoustic wave resonator, comprising:基底；base;声学镜；acoustic mirror;底电极；bottom electrode;顶电极；和top electrode; and压电层，设置在底电极与顶电极之间，a piezoelectric layer, arranged between the bottom electrode and the top electrode,其中：in:声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成谐振器的有效区域；The overlapping area of the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an effective area of the resonator;所述谐振器还包括设置在有效区域内的凸起结构，所述凸起结构沿有效区域的边缘设置；The resonator further includes a raised structure disposed in the effective area, the raised structure disposed along the edge of the effective area;所述凸起结构、声学镜、顶电极、压电层和底电极在谐振器的厚度方向上的重叠区域构成有效区域的边缘区，所述有效区域在水平方向上处于有效区域边缘部内侧的区域为有效区域的中心区；The overlapping area of the convex structure, the acoustic mirror, the top electrode, the piezoelectric layer and the bottom electrode in the thickness direction of the resonator constitutes an edge area of the effective area, the effective area being located inside the edge of the effective area in the horizontal direction. The area is the central area of the effective area;所述谐振器在中心区内的膜层结构具有第一声阻抗，所述谐振器在边缘区内的膜层结构具有第二声阻抗，所述凸起结构具有预定厚度以使得所述第二声阻抗小于所述第一声阻抗。The film layer structure in the central region of the resonator has a first acoustic impedance, the film layer structure in the edge region of the resonator has a second acoustic impedance, and the raised structure has a predetermined thickness such that the second acoustic impedance is The acoustic impedance is smaller than the first acoustic impedance.2.根据权利要求1所述的谐振器，其中：2. The resonator of claim 1, wherein:所述第一声阻抗与第二声阻抗之间的差值不小于第一声阻抗的0.2％。The difference between the first acoustic impedance and the second acoustic impedance is not less than 0.2% of the first acoustic impedance.3.根据权利要求1所述的谐振器，其中：3. The resonator of claim 1, wherein:所述谐振器还包括在水平方向上处于边缘区的外侧与声学镜的边界之间的第三区，所述谐振器在顶电极的非电极连接端的第三区内的膜层结构具有S1模式声波禁带。The resonator further includes a third region in the horizontal direction between the outer side of the edge region and the boundary of the acoustic mirror, and the film layer structure of the resonator in the third region of the non-electrode connection end of the top electrode has an S1 mode Sonic band gap.4.根据权利要求1-3中任一项所述的谐振器，其中：4. The resonator of any one of claims 1-3, wherein:所述凸起结构的材料密度小于中心区的平均密度。The material density of the raised structures is less than the average density of the central region.5.根据权利要求4所述的谐振器，其中：5. The resonator of claim 4, wherein:所述谐振器的串联谐振频率或并联谐振频率在Band3 RX频段范围内；且the series resonant frequency or the parallel resonant frequency of the resonator is within the Band3 RX frequency band; and所述凸起结构的厚度不小于0.05μm。The thickness of the protruding structures is not less than 0.05 μm.6.根据权利要求5所述的谐振器，其中：6. The resonator of claim 5, wherein:所述谐振器不包括位于覆盖顶电极的钝化层，所述凸起结构的材料与压电层的材料相同；或者the resonator does not include a passivation layer overlying the top electrode, the raised structure is of the same material as the piezoelectric layer; or所述谐振器还包括覆盖顶电极的钝化层，所述凸起结构的材料与所述钝化层的材料相同。The resonator further includes a passivation layer covering the top electrode, and the material of the protruding structure is the same as that of the passivation layer.7.根据权利要求6所述的谐振器，其中：7. The resonator of claim 6, wherein:顶电极与底电极的材料为钼，压电层的材料为氮化铝或掺杂氮化铝，凸起结构的材料为氮化铝或掺杂氮化铝。The material of the top electrode and the bottom electrode is molybdenum, the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride, and the material of the protruding structure is aluminum nitride or doped aluminum nitride.8.根据权利要求1-3中任一项所述的谐振器，其中：8. The resonator of any one of claims 1-3, wherein:所述凸起结构的材料密度大于中心区的平均密度。The material density of the raised structures is greater than the average density of the central region.9.根据权利要求8所述的谐振器，其中：9. The resonator of claim 8, wherein:凸起结构的材料为钨。The material of the protruding structure is tungsten.10.根据权利要求9所述的谐振器，其中：10. The resonator of claim 9, wherein:顶电极、底电极和凸起结构的材料为钨，压电层的材料为氮化铝或掺杂氮化铝；且The material of the top electrode, the bottom electrode and the protruding structure is tungsten, and the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride; and凸起结构的厚度在0.04μm-0.14μm的范围内。The thickness of the protruding structures is in the range of 0.04 μm-0.14 μm.11.根据权利要求8所述的谐振器，其中：11. The resonator of claim 8, wherein:谐振器的串联谐振频率或并联谐振频率在Band3 TX或Band3 RX，或Band1 TX频段范围内；The series resonance frequency or parallel resonance frequency of the resonator is within the Band3 TX or Band3 RX, or Band1 TX frequency band;凸起结构的厚度在0.05μm-1μm的范围内。The thickness of the protruding structure is in the range of 0.05 μm-1 μm.12.根据权利要求8所述的谐振器，其中：12. The resonator of claim 8, wherein:谐振器的串联谐振频率或并联谐振频率在Band7 TX或Band7 RX频段范围的范围内；The series resonant frequency or parallel resonant frequency of the resonator is within the range of Band7 TX or Band7 RX frequency band;凸起结构的厚度不小于0.05μm。The thickness of the protruding structures is not less than 0.05 μm.13.根据权利要求11或12所述的谐振器，其中：13. The resonator of claim 11 or 12, wherein:凸起结构的材料为钼。The material of the raised structure is molybdenum.14.根据权利要求13所述的谐振器，其中：14. The resonator of claim 13, wherein:顶电极、底电极和凸起结构的材料为钼，压电层的材料为氮化铝或掺杂氮化铝。The material of the top electrode, the bottom electrode and the protruding structure is molybdenum, and the material of the piezoelectric layer is aluminum nitride or doped aluminum nitride.15.根据权利要求14所述的谐振器，其中：15. The resonator of claim 14, wherein:所述谐振器在所述有效区域内的膜层结构包括覆盖顶电极的钝化层，所述钝化层为氮化铝层；或者The film layer structure of the resonator in the effective area includes a passivation layer covering the top electrode, and the passivation layer is an aluminum nitride layer; or所述谐振器在所述有效区域内的膜层结构不包括覆盖顶电极的钝化层。The film layer structure of the resonator in the effective area does not include a passivation layer covering the top electrode.16.根据权利要求1-3中任一项所述的谐振器，其中：16. The resonator of any of claims 1-3, wherein:所述凸起结构设置在顶电极的上方；或者The protruding structure is disposed above the top electrode; or所述凸起结构设置在底电极与压电层之间。The protruding structure is disposed between the bottom electrode and the piezoelectric layer.17.一种滤波器，包括根据权利要求1-16中任一项所述的体声波谐振器。17. A filter comprising the bulk acoustic wave resonator of any of claims 1-16.18.一种电子设备，包括根据权利要求17所述的滤波器或者根据权利要求1-17中任一项所述的谐振器。18. An electronic device comprising a filter according to claim 17 or a resonator according to any of claims 1-17.
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