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CN114121848A - Low-frequency high-power device metal ceramic tube shell package - Google Patents

Low-frequency high-power device metal ceramic tube shell package
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Publication number
CN114121848A
CN114121848ACN202111256743.1ACN202111256743ACN114121848ACN 114121848 ACN114121848 ACN 114121848ACN 202111256743 ACN202111256743 ACN 202111256743ACN 114121848 ACN114121848 ACN 114121848A
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metal
ceramic
heat sink
power device
ceramic package
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CN114121848B (en
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高永辉
徐守利
银军
夏达
顾颖言
蔡晓波
张晓帆
赵景波
默江辉
翟岐
段雪
杨光晖
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CETC 13 Research Institute
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Abstract

Translated fromChinese

本发明提供了一种低频大功率器件金属陶瓷管壳封装,包括类矩形的金属热沉、陶瓷封装体,以及功率器件;金属热沉的两端分别设有连接部,两个连接部之间嵌装有热相变材料层;陶瓷封装体的底壁上设有第一散热部,第一散热部与相变材料层位置对应;功率器件与陶瓷封装体的内底壁贴合,且位于第一散热部的正上方;其中,第一散热部用于将功率器件散发的热量传导至热相变材料层,进而热传递至金属热沉与外界进行热交换;金属热沉上位于陶瓷封装体和两个连接部之间的区域均设有应力缓释部。本发明提供的一种低频大功率器件金属陶瓷管壳封装,能够从克服机械应力问题和散热问题两个方面共同提高功率器件的长期使用可靠性。

Figure 202111256743

The invention provides a metal-ceramic tube-shell package for a low-frequency and high-power device, which includes a rectangular-like metal heat sink, a ceramic package, and a power device; two ends of the metal heat sink are respectively provided with connecting parts, and between the two connecting parts The thermal phase change material layer is embedded; the bottom wall of the ceramic package body is provided with a first heat dissipation part, and the first heat dissipation part corresponds to the position of the phase change material layer; the power device is attached to the inner bottom wall of the ceramic package body, and is located in Right above the first heat sink; wherein, the first heat sink is used to conduct the heat dissipated by the power device to the thermal phase change material layer, and then transfer the heat to the metal heat sink for heat exchange with the outside world; the metal heat sink is located on the ceramic package Both the body and the area between the two connecting parts are provided with stress relief parts. The invention provides a low-frequency high-power device metal-ceramic tube-shell package, which can jointly improve the long-term use reliability of the power device from the two aspects of overcoming the mechanical stress problem and the heat dissipation problem.

Figure 202111256743

Description

Low-frequency high-power device metal ceramic tube shell package
Technical Field
The invention belongs to the technical field of tube shell packaging, and particularly relates to a metal ceramic tube shell package of a low-frequency high-power device.
Background
As microwave power devices are developed to high power, power chips used in the devices are larger and larger, and therefore, the aspect ratio of the package is increased, which leads to the problem of stress generated by the power devices in engineering applications to be more and more serious. At present, the encapsulation tube size aspect ratio that high-power device used is close to four to one, simultaneously because the mode that adopts sticky fixation can't satisfy the long-term service requirement, consequently in order to guarantee long-term sealing performance, power device encapsulation adopts the brazing to fix mostly, but because solder ductility is relatively poor, when fixing the encapsulation tube in practical engineering application, owing to the pulling of fastening stress, lead to the ceramic body fracture of encapsulation tube easily, can cause power chip impaired and burn out even when serious, in addition, because high-power device's the gauge height of generating heat, it is relatively poor to rely on the mode radiating effect of encapsulation tube itself towards the external heat dissipation capacity, also be a factor that leads to power chip overheated to burn out and influence its long-term service reliability.
Disclosure of Invention
The embodiment of the invention provides a metal ceramic tube shell package of a low-frequency high-power device, aiming at improving the mechanical stress release capability and the heat dissipation capability of the package tube shell so as to improve the long-term use reliability of a power chip.
In order to achieve the purpose, the invention adopts the technical scheme that: the metal ceramic tube shell package of the low-frequency high-power device comprises a quasi-rectangular metal heat sink, a ceramic package body and a power device; the two ends of the metal heat sink are respectively provided with a connecting part, and a thermal phase change material layer is embedded between the two connecting parts on the top surface of the metal heat sink; the ceramic packaging body is provided with an airtight cavity, the peripheral area of the bottom surface of the ceramic packaging body is seamlessly welded with the top wall area of the metal heat sink positioned at the periphery of the thermal phase change material layer, the bottom wall of the ceramic packaging body is provided with a first heat dissipation part, and the first heat dissipation part corresponds to the phase change material layer in position; the power device is packaged in the airtight cavity, attached to the inner bottom wall of the ceramic packaging body and positioned right above the first heat dissipation part; the first radiating part is used for conducting heat emitted by the power device to the thermal phase change material layer, and then conducting the heat to the metal heat sink to exchange heat with the outside; the metal heat sink is provided with a stress slow release part in the area between the ceramic packaging body and the two connecting parts.
In a possible implementation manner, the first heat dissipation part is a plurality of heat dissipation holes formed in the bottom wall of the ceramic package body, a filling groove is formed in the position, right below the first heat dissipation part, of the top surface of the metal heat sink, and the thermal phase change material layer is embedded in the filling groove.
In some embodiments, the plurality of heat dissipation holes are distributed in an array manner along the length and width directions of the metal heat sink, the plurality of filling grooves are distributed at intervals along the width direction of the metal heat sink, each filling groove respectively corresponds to a row of heat dissipation holes arranged along the length direction of the metal heat sink up and down, and each filling groove is embedded with a thermal phase change material layer.
In some embodiments, an air gap is formed between the thermal phase change material layer and the bottom wall of the ceramic package body, and the metal heat sink is attached to the bottom wall of the ceramic package body at a position between adjacent filling grooves.
In some embodiments, the thermal phase change material layer is a composite phase change material of graphene foam and paraffin.
In one possible implementation, the long side walls of the ceramic package are provided with second heat sink portions extending toward the outside thereof.
Illustratively, an embedded groove is formed in the outer wall of the long side of the ceramic packaging body, and the second heat dissipation part is a heat conduction metal fin with one end inserted into the embedded groove and fixed by welding.
In some embodiments, the stress slow-release part is a through groove extending along the width direction of the metal heat sink, and the ratio of the groove width of the through groove to the length of the metal heat sink is 1: 40-45; the ratio of the groove depth of the through groove to the thickness of the metal heat sink is 1: 3.6-4.
For example, the ceramic package includes a ceramic bottom case, and a cover plate hermetically welded to a mouth portion of the ceramic bottom case, the cover plate and the ceramic bottom case together enclosing an airtight cavity; the outer walls of two sides of the ceramic bottom shell, which are close to the two connecting parts, are respectively provided with a C-shaped groove, and the periphery of the bottom surface of the cover plate is thinned and is attached to the end wall of the opening of the ceramic bottom shell.
In one possible implementation, the connecting portion is a U-shaped notch opened on an end position of the metal heat sink.
The invention provides a low-frequency high-power device metal ceramic tube package which has the beneficial effects that: compared with the prior art, the low-frequency high-power device metal ceramic tube shell package is characterized in that the ceramic package is fixed on the metal heat sink and fixedly connected with the mounting position through the two connecting parts positioned at the outer sides of the two ends of the ceramic package, the stress slow release part is arranged between the connecting parts and the ceramic package, and the mechanical stress generated by the fixed connection of the metal heat sink and the mounting position can be slowly released, so that the mechanical stress is prevented from extending to the ceramic package and the power device packaged in the airtight cavity, the ceramic package and the power device are prevented from being broken due to stress pulling, meanwhile, the rapid heat absorption performance of the thermal phase change material can be utilized to rapidly absorb the heat emitted by the power device in the working process through the first heat dissipation part and then be thermally transferred to the metal heat sink to exchange heat with the outside for heat dissipation, therefore, the rapid heat dissipation capacity of the ceramic package is improved, the power device is prevented from being burnt due to overheating, and the long-term use reliability of the power device is improved jointly from the two aspects of overcoming the mechanical stress problem and the heat dissipation problem.
Drawings
Fig. 1 is a schematic top view of a cermet tube package of a low-frequency high-power device according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along line B-B of FIG. 1; (ii) a
FIG. 4 is a schematic cross-sectional view taken along line C-C of FIG. 1;
FIG. 5 is a schematic view of a portion of the enlarged structure at D in FIG. 2;
fig. 6 is a schematic structural diagram of a metal heat sink used in the embodiment of the present invention.
In the figure: 100. a metal heat sink; 101. a connecting portion; 102. a thermal phase change material layer; 103. a stress relief portion; 104. filling the groove; 200. a ceramic package; 201. a ceramic bottom shell; 2011. c-shaped grooves; 202. a cover plate; 203. an airtight chamber; 204. a first heat sink portion; 2040. heat dissipation holes; 205. a second heat sink member; 300. a power device; 400. an air gap.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to fig. 4, a description will now be given of a low-frequency high-power device cermet package according to the present invention. The metal ceramic tube package of the low-frequency high-power device comprises a quasi-rectangularmetal heat sink 100, aceramic package body 200 and apower device 300; two ends of themetal heat sink 100 are respectively provided with a connectingpart 101, and a thermal phasechange material layer 102 is embedded between the two connectingparts 101 on the top surface of themetal heat sink 100; theceramic packaging body 200 is provided with anairtight cavity 203, the peripheral area of the bottom surface of theceramic packaging body 200 is seamlessly welded with the top wall area of themetal heat sink 100 positioned at the periphery of the thermal phasechange material layer 102, the bottom wall of theceramic packaging body 200 is provided with a firstheat dissipation part 204, and the firstheat dissipation part 204 corresponds to the phase change material layer; thepower device 300 is packaged in theairtight cavity 203, attached to the inner bottom wall of theceramic package 200, and located right above thefirst heat sink 204; the firstheat sink part 204 is used for conducting heat dissipated by thepower device 300 to the thermal phasechange material layer 102, and further conducting the heat to themetal heat sink 100 for heat exchange with the outside; themetal heat sink 100 is provided withstress relief portions 103 in the regions between theceramic package 200 and the twoconnection portions 101.
It should be noted that themetal heat sink 100 adopts a quasi-rectangular structure, which mainly matches a high length-width ratio (length: width ≈ 4:1) of theceramic package 200 prepared for the size of thepower device 300, and specifically, the quasi-rectangular structure refers to a form in which four corners of the rectangle may have a rounded corner or a chamfered corner structure, and of course, it is also possible to directly adopt a square rectangular structure, and no limitation is made herein; it should be understood that, during actual engineering installation and use, thepower device 300 should be mounted before theceramic package 200 is packaged, and the mounted cavity is hermetically sealed by a gas-tight cover to form thehermetic cavity 203, theceramic package 200 is a common process structure for achieving hermetic packaging of thepower device 300, and a specific packaging form thereof is not limited and described in detail herein, and the firstheat sink portion 204 disposed on theceramic package 200 may be a heat conductive material embedded on a bottom wall of theceramic package 200 and is abutted against thepower device 300 and the thermal phasechange material layer 102 by using the heat conductive material for heat transfer, and may be implemented by filling a heat conductive adhesive or penetrating a graphene rod on the bottom wall of theceramic package 200 after punching, or directly adopting a mode of dissipating punching heat onto the thermal phasechange material layer 102, of course, it should be emphasized that, in order to ensure the hermetic packaging of thepower device 300, when theceramic package 200 is connected to the metal heat sink 100 (soldering), it should be ensured that the peripheral area of the bottom surface of theceramic package 200 is welded seamlessly with the top wall area of themetal heat sink 100 located at the periphery of the thermal phasechange material layer 102, so as to ensure the airtightness of theairtight cavity 203.
Compared with the prior art, the ceramic package is fixed on themetal heat sink 100, and is fixedly connected with the mounting position through the two connectingparts 101 located at the outer sides of the two ends of the ceramic package, because the stress slow-release part 103 is arranged between the connectingparts 101 and the ceramic package, the mechanical stress generated by the fixed connection of themetal heat sink 100 and the mounting position can be slowly released, so that the mechanical stress is prevented from extending to thepower device 300 in theairtight cavity 203, the ceramic package and thepower device 300 are prevented from being broken due to stress pulling, meanwhile, because the thermal phasechange material layer 102 is arranged on themetal heat sink 100, the rapid heat absorption performance of the thermal phase change material can be utilized, the heat emitted by thepower device 300 in the working process can be rapidly absorbed through the firstheat dissipation part 204, and then is thermally transferred to themetal heat sink 100 to perform heat exchange and heat dissipation with the outside, therefore, the rapid heat dissipation capability of the ceramic package is improved, thepower device 300 is prevented from being burnt due to overheating, and the long-term use reliability of thepower device 300 is improved from the two aspects of overcoming the mechanical stress problem and the heat dissipation problem.
In some embodiments, referring to fig. 4, the firstheat dissipation portion 204 is a plurality ofheat dissipation holes 2040 disposed on the bottom wall of theceramic package 200, afilling groove 104 is disposed on the top surface of themetal heat sink 100 at a position right below the firstheat dissipation portion 204, and the thermal phasechange material layer 102 is embedded in thefilling groove 104. Eachheat dissipation hole 2040 can serve as a heat absorption channel through which the thermal phasechange material layer 102 absorbs heat of thepower device 300, and compared with a method of simply adopting contact heat transfer to perform heat exchange, the speed of transferring heat from thepower device 300 to the thermal phasechange material layer 102 can be further increased, so that the heat dissipation efficiency is improved.
As a specific distribution manner of the plurality ofheat dissipation holes 2040, please refer to fig. 2, 4 and 6, the plurality ofheat dissipation holes 2040 are distributed in an array manner along the length and width directions of themetal heat sink 100, the plurality offilling grooves 104 are distributed at intervals along the width direction of themetal heat sink 100, eachfilling groove 104 respectively corresponds to a row ofheat dissipation holes 2040 arranged along the length direction of themetal heat sink 100 up and down, and eachfilling groove 104 is embedded with the thermal phasechange material layer 102. On the premise of ensuring the structural strength of theceramic package body 200,heat dissipation holes 2040 are formed as many as possible, and meanwhile, theheat dissipation holes 2040 are arranged in an array distribution manner, so that only one thermal phasechange material layer 102 is arranged corresponding to each row ofheat dissipation holes 2040, and the influence on the rigidity of themetal heat sink 100 between two stressslow release portions 103 due to too large width of thefilling grooves 104 is avoided (a metal body betweenadjacent filling grooves 104 can be used as a stress beam of themetal heat sink 100 to improve the deformation resistance of themetal heat sink 100 in the long axis direction), so that after the connectingportions 101 at two ends of themetal heat sink 100 are fixedly connected to the mounting position, the mechanical stress is fastened and released on the stressslow release portions 103, and the problem that theceramic package body 200 or thepower device 300 is pulled due to deformation caused by insufficient rigidity of themetal heat sink 100 at the connecting position with theceramic package body 200 is solved.
In some possible implementations, referring to fig. 2 and 5, anair gap 400 is formed between the thermal phasechange material layer 102 and the bottom wall of theceramic package 200, and the portions of themetal heat sink 100 located between theadjacent filling grooves 104 are attached to the bottom wall of theceramic package 200. Theair gap 400 is arranged to prevent the first heat sink part 204 (mainly, the bottom wall of theceramic package body 200 in the area of the first heat sink part 204) from directly contacting the thermal phasechange material layer 102, so that the heat is prevented from being reversely transferred from the thermal phasechange material layer 102 to the firstheat sink part 204 to influence the heat dissipation efficiency of thepower device 300, and meanwhile, the partial part of themetal heat sink 100 located between theadjacent filling grooves 104 is attached and supported on the bottom wall of theceramic package body 200, so that the contact support area between theceramic package body 200 and themetal heat sink 100 can be increased, and the connection reliability is improved.
Specifically, the thermal phasechange material layer 102 is a composite phase change material of graphene foam and paraffin. The thermal phase-change material layer 102 takes graphene foam as a framework structure, and forms a composite phase-change material after absorbing paraffin by a liquid phase infiltration method (paraffin is heated and changes from a solid phase to a liquid phase, and the graphene foam has a heat conduction function, can prevent the liquid phase paraffin from flowing randomly, and can ensure the overall form stability of the thermal phase-change material layer 102), the thermal conductivity coefficient can reach 5.5-6W/m.K, when the heat of thepower device 300 is transferred to the thermal phasechange material layer 102 through theheat dissipation hole 2040, the temperature of the thermal phasechange material layer 102 exceeds the phase change temperature thereof, phase change occurs, thereby absorbing a large amount of heat, and since the thermal phase-change material layer 102 is in direct contact with themetal heat sink 100, therefore, the high temperature can be quickly transmitted to themetal heat sink 100 by using the ultrahigh heat conductivity of themetal heat sink 100, and then the heat exchange heat dissipation is carried out between themetal heat sink 100 and the outside, so that the heat dissipation efficiency is high.
In addition, in order to prevent the thermal phasechange material layer 102 from entering theairtight cavity 203 through theheat dissipation holes 2040 after the thermal phasechange material layer 102 absorbs heat and changes phase (changes from solid phase to liquid phase), the graphene film is attached to the surface layer of the thermal phasechange material layer 102, so that the graphene film can be prevented from flowing into theairtight cavity 203 after the thermal phase change material layer absorbs heat and changes phase freely without affecting the rapid heat absorption performance of the graphene film, and the stability is improved.
In some embodiments, referring to fig. 1 and 4, theceramic package 200 is provided with a secondheat sink member 205 on the long sidewall thereof. Optionally, in the embodiment, the specific structure of the secondheat sink portion 205 is that an embedded groove is formed on an outer wall of a long side of theceramic package 200, and the secondheat sink portion 205 is a heat conductive metal fin having one end inserted into the embedded groove and fixed by welding. Because the heat thatpower device 300 gived off can cause the inside intensification ofairtight chamber 203, and then leads toceramic package 200 to generate heat, here through setting up secondheat dissipation portion 205, utilize large tracts of land, the little thickness attribute of metal fin to realize with external quick heat transfer to improveceramic package 200's radiating efficiency.
In the present embodiment, referring to fig. 1, fig. 2 and fig. 6, the stress slow-releasingportion 103 is a through groove extending along the width direction of themetal heat sink 100, and the ratio of the groove width of the through groove to the length of themetal heat sink 100 is 1: 40-45; the ratio of the depth of the through groove to the thickness of themetal heat sink 100 is 1: 3.6-4. It should be understood that thestress releasing portion 103 is a structural form having a mechanical stress releasing function or a function of blocking stress transmission, and may specifically be one or more stress releasing grooves extending along the width direction of themetal heat sink 100, and the bending ductility of themetal heat sink 100 is increased by using the rigidity reduction of the grooved position after the grooving, so as to release the stress and reduce the transmission amount of the mechanical stress generated by the fastening connection to theceramic package 200, or a plurality of stress releasing short grooves distributed at intervals along the width direction of themetal heat sink 100, which can also increase the bending ductility at the grooved position to improve the performance of releasing the mechanical stress, it should be noted that, in any way, the position where thestress releasing portion 103 is arranged should be ensured to be the position with the lowest structural strength on themetal heat sink 100, that is, that the mechanical stress generated by themetal heat sink 100 due to the fastening force causes themetal heat sink 100 to generate the extending deformation for releasing at the position, thereby blocking the transmission of mechanical stress to the connecting position of theceramic packaging body 200 and themetal heat sink 100, and achieving the effect of eliminating or reducing the stress pulling effect of theceramic packaging body 200; as for the width and depth dimensions of the through-groove, based on the aspect ratio of themetal heat sink 100, it is determined through optimization simulation tests that the slow release of the mechanical connection stress can be effectively realized on the premise that the RF (Radio Frequency) performance of thepower device 300 is not affected, so that the cracking phenomenon of theceramic package 200 is avoided, and the long-term use reliability of thepower device 300 is further improved.
Of course, in order to avoid the through groove from being broken, the two groove bottom corners of the through groove and the notch corners of the through groove located outside theceramic package body 200 are all set to be fillet structures, so as to avoid the stress concentration phenomenon on the corners of the through groove.
Fig. 2 shows an embodiment of theceramic package 200, theceramic package 200 includes aceramic bottom case 201, and acover plate 202 hermetically welded to a mouth portion of theceramic bottom case 201, thecover plate 202 and theceramic bottom case 201 together enclosing anairtight chamber 203; referring to fig. 5, C-shaped grooves 2011 are respectively formed on outer walls of two sides of theceramic bottom case 201 close to the two connectingportions 101, and a bottom periphery of thecover plate 202 is thinned and attached to an opening end wall of theceramic bottom case 201. Before thecover plate 202 and the ceramicbottom case 201 are hermetically packaged, thepower device 300 is attached to the inner bottom wall (directly above the first heat dissipation portion 204) of the ceramicbottom case 201, specifically, the hermetic packaging mode may be parallel seam welding or brazing, due to the difference of expansion coefficients after welding between the ceramicbottom case 201 and thecover plate 202, when the temperature of the ceramicbottom case 201 and thecover plate 202 is changed due to heat generated by thepower device 300, the hermetic connection reliability may be affected due to the factor of thermal stress, here, by setting the C-shapedgroove 2011 and thinning, the contact area between the end wall of the mouth portion of the ceramicbottom case 201 and the edge of thecover plate 202 can be increased, the problem of cracking and air leakage of the connection position due to the thermal mismatch problem is solved, and the long-term use reliability is increased.
Illustratively, referring to fig. 1 and 6, the connectingportion 101 is a U-shaped notch opened at an end position of themetal heat sink 100. It should be noted that, theconnection portion 101 is used for reliably connecting themetal heat sink 100 to the mounting location, and the specific structural form may be that a hole or a notch is adopted, and a fastening member is inserted to connect with the mounting location, or a portion located outside two ends of theceramic package 200 may be directly used as theconnection portion 101 to be welded and fixed with the mounting location, and here, a U-shaped notch structure is selected as theconnection portion 101, so that the length of the U-shaped notch can be used to finely adjust the mounting location, and at the same time, the influence of a processing error on the mounting connection can be eliminated, and the connection mechanical stress can be reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

Translated fromChinese
1.一种低频大功率器件金属陶瓷管壳封装,其特征在于,包括:1. a low-frequency high-power device metal-ceramic shell package is characterized in that, comprising:金属热沉,类矩形,两端分别设有连接部,所述金属热沉的顶面于两个所述连接部之间嵌装有热相变材料层;The metal heat sink is similar to a rectangle, and the two ends are respectively provided with connecting parts, and the top surface of the metal heat sink is embedded with a thermal phase change material layer between the two connecting parts;陶瓷封装体,具有气密腔,所述陶瓷封装体的底面周边区域与所述金属热沉位于所述热相变材料层外围的顶壁区域无缝焊接,所述陶瓷封装体的底壁上设有第一散热部,所述第一散热部与所述热相变材料层位置对应;A ceramic package body with an airtight cavity, a bottom peripheral region of the ceramic package body and a top wall region of the metal heat sink located at the periphery of the thermal phase change material layer are seamlessly welded, and the bottom wall of the ceramic package body is welded seamlessly a first heat dissipation part is provided, and the first heat dissipation part corresponds to the position of the thermal phase change material layer;功率器件,封装于所述气密腔内,与所述陶瓷封装体的内底壁贴合,且位于所述第一散热部的正上方;a power device, packaged in the airtight cavity, attached to the inner bottom wall of the ceramic package body, and located directly above the first heat dissipation part;其中,所述第一散热部用于将所述功率器件散发的热量传导至所述热相变材料层,进而热传递至所述金属热沉与外界进行热交换;所述金属热沉上位于所述陶瓷封装体和两个所述连接部之间的区域均设有应力缓释部。Wherein, the first heat dissipation part is used to conduct the heat dissipated by the power device to the thermal phase change material layer, and then transfer the heat to the metal heat sink for heat exchange with the outside world; Both the ceramic package body and the region between the two connecting parts are provided with stress relief parts.2.如权利要求1所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述第一散热部为设于所述陶瓷封装体底壁上的多个散热孔,所述金属热沉的顶面于所述第一散热部的正下方的位置上设有填充槽,所述热相变材料层嵌装于所述填充槽内。2 . The metal-ceramic package of a low-frequency and high-power device according to claim 1 , wherein the first heat dissipation portion is a plurality of heat dissipation holes provided on the bottom wall of the ceramic package body, and the The top surface of the metal heat sink is provided with a filling groove at a position directly below the first heat dissipation portion, and the thermal phase change material layer is embedded in the filling groove.3.如权利要求2所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,多个所述散热孔为沿所述金属热沉的长度和宽度方向阵列分布的形态,所述填充槽沿所述金属热沉的宽度方向间隔分布有多个,每个所述填充槽分别与沿所述金属热沉的长度方向排列的一排所述散热孔上下对应,且每个所述填充槽均嵌装有所述热相变材料层。3 . The metal-ceramic package of a low-frequency high-power device according to claim 2 , wherein the plurality of heat dissipation holes are in the form of array distribution along the length and width directions of the metal heat sink, and the A plurality of filling grooves are distributed at intervals along the width direction of the metal heat sink, and each filling groove corresponds to a row of the heat dissipation holes arranged along the length direction of the metal heat sink. The filling grooves are all embedded with the thermal phase change material layer.4.如权利要求3所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述热相变材料层与所述陶瓷封装体的底壁之间具有气隙,所述金属热沉位于相邻所述填充槽之间的部位与所述陶瓷封装体的底壁贴合。4. The metal-ceramic package of low-frequency and high-power devices according to claim 3, wherein an air gap is formed between the thermal phase change material layer and the bottom wall of the ceramic package, and the metal The portion of the heat sink located between the adjacent filling grooves is in contact with the bottom wall of the ceramic package.5.如权利要求2所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述热相变材料层为石墨烯泡沫和石蜡的复合相变材料。5 . The metal-ceramic tube-shell package of a low-frequency high-power device according to claim 2 , wherein the thermal phase-change material layer is a composite phase-change material of graphene foam and paraffin. 6 .6.如权利要求1所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述陶瓷封装体的长侧壁上设有朝向其外侧延伸的第二散热部。6 . The metal-ceramic package of low-frequency and high-power devices according to claim 1 , wherein the long sidewall of the ceramic package is provided with a second heat dissipation portion extending toward the outside thereof. 7 .7.如权利要求6所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述陶瓷封装体的长侧外壁上开设有嵌装槽,所述第二散热部为一端插装于所述嵌装槽内并焊接固定的导热金属翅片。7 . The metal-ceramic tube-shell package of a low-frequency and high-power device according to claim 6 , wherein a long-side outer wall of the ceramic package body is provided with an embedding groove, and the second heat dissipation portion is inserted into one end. 8 . The heat-conducting metal fins are installed in the embedding groove and fixed by welding.8.如权利要求1所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述应力缓释部为沿所述金属热沉的宽度方向延伸的通槽,所述通槽的槽宽与所述金属热沉的长度比为1∶40~45;所述通槽的槽深与所述金属热沉的厚度比为1∶3.6~4。8 . The cermet package of low frequency and high power device according to claim 1 , wherein the stress relief part is a through groove extending along the width direction of the metal heat sink, and the through groove The ratio of the slot width to the length of the metal heat sink is 1:40-45; the ratio of the slot depth of the through slot to the thickness of the metal heat sink is 1:3.6-4.9.如权利要求1所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述陶瓷封装体包括陶瓷底壳,以及密封焊接于所述陶瓷底壳的口部的盖板,所述盖板与所述陶瓷底壳共同围成所述气密腔;其中,所述陶瓷底壳靠近两个所述连接部的两侧外壁上分别开设有C型槽,所述盖板的底面周边薄化处理并与所述陶瓷底壳的开口端壁贴合。9 . The metal-ceramic package of a low-frequency high-power device according to claim 1 , wherein the ceramic package body comprises a ceramic bottom case, and a cover plate sealed and welded to the mouth of the ceramic bottom case. 10 . , the cover plate and the ceramic bottom case together form the airtight cavity; wherein, the outer walls of the ceramic bottom case close to the two connecting parts are respectively provided with C-shaped grooves, and the cover plate The periphery of the bottom surface of the ceramic bottom surface is thinned and fitted with the open end wall of the ceramic bottom shell.10.如权利要求1-9任一项所述的一种低频大功率器件金属陶瓷管壳封装,其特征在于,所述连接部为开设于所述金属热沉的端部位置上的U型槽口。10 . The metal-ceramic tube-shell package of a low-frequency high-power device according to claim 1 , wherein the connecting portion is a U-shaped opening on the end of the metal heat sink. 11 . notch.
CN202111256743.1A2021-10-272021-10-27 A metal ceramic tube package for low-frequency high-power devicesActiveCN114121848B (en)

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CN113013154A (en)*2021-02-102021-06-22西南电子技术研究所(中国电子科技集团公司第十研究所)Integrated packaging tube shell for flat phased array antenna receiving and transmitting assembly

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JPH07201895A (en)*1993-12-281995-08-04Hitachi Ltd Semiconductor device
JPH1022418A (en)*1996-07-021998-01-23Nissan Motor Co Ltd Semiconductor element
US6455932B1 (en)*1999-08-172002-09-24Nec CorporationCeramic package for semiconductor device
JP2007115793A (en)*2005-10-192007-05-10Sumitomo Metal Electronics Devices IncHigh heat-dissipation package for housing electronic part
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