技术领域Technical Field
本发明涉及半导体技术领域，尤其涉及一种鳍形态改善方法。The present invention relates to the field of semiconductor technology, and in particular to a method for improving fin morphology.
背景技术Background technique
随着半导体器件特征尺寸按摩尔定律等比缩小，芯片集成度不断提高，出现了众多负面效应使传统的平面型MOS管发展到22nm时遇到了瓶颈，尤其是短沟道效应(SCE)显著增大，导致器件关态电流急剧增加；从16/14nm起，鳍形(FIN)结构的引入增大了栅围绕沟道的面，加强了栅对沟道的控制，从而有效缓解平面器件中出现的短沟道效应。As the characteristic size of semiconductor devices shrinks proportionally according to Moore's law and the chip integration continues to increase, many negative effects have emerged, causing the traditional planar MOS tube to encounter a bottleneck when it developed to 22nm, especially the short channel effect (SCE) increased significantly, resulting in a sharp increase in the device's off-state current; from 16/14nm, the introduction of the fin structure increased the area around the channel by the gate, strengthened the control of the gate over the channel, and effectively alleviated the short channel effect in planar devices.
FIN干法刻蚀过程中，高能等离子体会对FIN表面造成破坏，以及出现FIN表面粗糙度过大和FIN侧面弯曲不平的现象，如图1和图2所示。在鳍型场效应晶体管(Fin Field-Effect Transistor，FinFET)中，驱动电流沿鳍结构的垂直侧壁流动，因此，侧壁的表面质量对可靠性和器件的电性能有很大的影响。粗糙的侧壁会导致载流子迁移率和寿命降低，电流驱动降低，亚阈值摆动退化，泄漏电流和低频噪声增加。During the FIN dry etching process, high-energy plasma can damage the FIN surface, and the FIN surface roughness is too large and the FIN side is uneven, as shown in Figures 1 and 2. In the Fin Field-Effect Transistor (FinFET), the driving current flows along the vertical sidewalls of the fin structure. Therefore, the surface quality of the sidewalls has a great impact on the reliability and electrical performance of the device. Rough sidewalls can lead to reduced carrier mobility and lifetime, reduced current drive, degradation of subthreshold swing, and increased leakage current and low-frequency noise.
因此，有必要提供一种新型的鳍形态改善方法以解决现有技术中存在的上述问题。Therefore, it is necessary to provide a new method for improving fin morphology to solve the above problems existing in the prior art.
发明内容Summary of the invention
本发明的目的在于提供一种鳍形态改善方法，提高了鳍结构垂直侧壁的平整度。The object of the present invention is to provide a method for improving the fin morphology, thereby improving the flatness of the vertical sidewalls of the fin structure.
为实现上述目的，本发明的所述鳍形态改善方法，包括以下步骤：To achieve the above object, the fin morphology improvement method of the present invention comprises the following steps:
S1：在鳍结构的凹陷处填补氮化硅；S1: Fill the recess of the fin structure with silicon nitride;
S2：在所述鳍结构暴露的表面上生长氧化硅；S2: growing silicon oxide on the exposed surface of the fin structure;
S3：填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽，然后进行退火处理；S3: filling silicon oxide to completely wrap the fin structure and fill the grooves between the fin structures, and then performing annealing;
S4：刻蚀所述氧化硅，以暴露部分所述鳍结构。S4: etching the silicon oxide to expose a portion of the fin structure.
所述鳍形态改善方法的有益效果在于：在鳍结构的凹陷处填补氮化硅，在所述鳍结构暴露的表面上生长氧化硅，所述氮化硅能够对所述鳍结构凹陷处的硅起到保护作用，进而避免所述鳍结构凹陷处的硅被氧化，而所述鳍结构凹陷处之外的硅则会被氧化，填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽，然后进行退火处理，此时所述鳍结构凹陷处的氮化硅会起到保护作用，避免所述鳍结构凹陷处的硅被氧化，刻蚀所述氧化硅，以暴露部分所述鳍结构，去除了所述鳍结构侧壁突出的部分，从而提高了所述鳍结构垂直侧壁的平整度。The beneficial effect of the fin morphology improvement method is: filling the depression of the fin structure with silicon nitride, growing silicon oxide on the exposed surface of the fin structure, the silicon nitride can protect the silicon in the depression of the fin structure, thereby preventing the silicon in the depression of the fin structure from being oxidized, while the silicon outside the depression of the fin structure will be oxidized, filling with silicon oxide to completely wrap the fin structure and fill the grooves between the fin structures, and then performing annealing treatment, at this time, the silicon nitride in the depression of the fin structure will protect the silicon in the depression of the fin structure from being oxidized, etching the silicon oxide to expose part of the fin structure, removing the protruding part of the side wall of the fin structure, thereby improving the flatness of the vertical side wall of the fin structure.
可选地，所述在鳍结构的凹陷处填补氮化硅，包括：Optionally, filling the recess of the fin structure with silicon nitride includes:
在所述鳍结构的表面上形成氮化硅；forming silicon nitride on a surface of the fin structure;
采用各向异性干法刻蚀工艺将所述鳍结构凹陷处之外的氮化硅去除。其有益效果在于：采用各向异性干法刻蚀工艺，能够仅去除鳍结构凹陷处之外的氮化硅，而将鳍结构凹陷处的氮化硅保留。The silicon nitride outside the concave part of the fin structure is removed by an anisotropic dry etching process. The beneficial effect is that the silicon nitride outside the concave part of the fin structure can be removed by an anisotropic dry etching process, while the silicon nitride in the concave part of the fin structure is retained.
可选地，所述在所述鳍结构的表面上形成氮化硅，包括：采用原子层沉积工艺，在所述鳍结构的表面形成氮化硅。Optionally, forming silicon nitride on the surface of the fin structure includes: forming silicon nitride on the surface of the fin structure using an atomic layer deposition process.
可选地，所述在所述鳍结构暴露的表面上生长氧化硅，包括：采用水蒸气氧化法或原子层沉积工艺在所述鳍结构暴露的表面上生长氧化硅。Optionally, growing silicon oxide on the exposed surface of the fin structure includes: growing silicon oxide on the exposed surface of the fin structure by using a water vapor oxidation method or an atomic layer deposition process.
可选地，所述填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽，然后进行退火处理，包括：Optionally, the filling of silicon oxide to completely wrap the fin structure and fill the trenches between the fin structures, and then performing an annealing process, includes:
采用流体化学气相沉积工艺填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽；Filling silicon oxide to completely wrap the fin structure and fill the grooves between the fin structures by using a fluid chemical vapor deposition process;
对所述氧化硅进行水蒸气退火处理。The silicon oxide is subjected to a water vapor annealing treatment.
可选地，所述刻蚀所述氧化硅，以暴露部分所述鳍结构，包括：采用各向同性刻蚀工艺刻蚀所述氧化硅，以暴露部分所述鳍结构。Optionally, etching the silicon oxide to expose a portion of the fin structure includes: etching the silicon oxide using an isotropic etching process to expose a portion of the fin structure.
可选地，当所述鳍结构的顶部具有氮化硅和氧化硅形成的硬掩模时，所述步骤S3还包括：所述填充氧化硅以完全包裹所述硬掩模。Optionally, when the top of the fin structure has a hard mask formed of silicon nitride and silicon oxide, the step S3 further includes: filling the silicon oxide to completely wrap the hard mask.
可选地，执行所述步骤S3和所述步骤S4之间，还包括：对所述硬掩模中氮化硅上侧的氧化硅进行平坦化，以暴露所述硬掩模中的氮化硅。Optionally, between executing step S3 and step S4, the method further includes: planarizing the silicon oxide on the upper side of the silicon nitride in the hard mask to expose the silicon nitride in the hard mask.
可选地，所述对所述硬掩模中氮化硅上侧的氧化硅进行平坦化后，还包括：进行退火处理。其有益效果在于：退火处理后，能够提高所述氧化硅的膜质。Optionally, after planarizing the silicon oxide on the upper side of the silicon nitride in the hard mask, the method further includes: performing an annealing treatment. The beneficial effect thereof is that the film quality of the silicon oxide can be improved after the annealing treatment.
可选地，执行所述步骤S3和所述步骤S4之间，还包括：采用湿法去除所述硬掩模中的氮化硅。Optionally, between executing step S3 and step S4, the method further includes: removing silicon nitride in the hard mask by a wet method.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为现有技术中一种鳍结构的示意图；FIG1 is a schematic diagram of a fin structure in the prior art;
图2为现有技术中又一种鳍结构的示意图；FIG2 is a schematic diagram of another fin structure in the prior art;
图3本发明一些实施例中鳍形态改善方法的流程图；FIG3 is a flow chart of a method for improving fin morphology in some embodiments of the present invention;
图4为本发明一些实施例中在图1所述结构的表面形成氮化硅后的结构示意图；FIG4 is a schematic diagram of a structure after silicon nitride is formed on the surface of the structure shown in FIG1 in some embodiments of the present invention;
图5为本发明一些实施例中去除图4所示鳍结构凹陷处之外的氮化硅后的结构示意图；FIG5 is a schematic diagram of a structure after removing silicon nitride outside the recessed portion of the fin structure shown in FIG4 in some embodiments of the present invention;
图6为本发明一些实施例中在图5所示鳍结构暴露的表面上生长氧化硅后的结构示意图；FIG. 6 is a schematic diagram of a structure after silicon oxide is grown on the exposed surface of the fin structure shown in FIG. 5 in some embodiments of the present invention;
图7为本发明一些实施例中在图6所示结构填充氧化硅后的结构示意图；FIG. 7 is a schematic diagram of the structure of FIG. 6 after being filled with silicon oxide in some embodiments of the present invention;
图8为本发明一些实施例中对图7所示结构进行水蒸气退火处理后的结构示意图；FIG8 is a schematic diagram of the structure of FIG7 after steam annealing in some embodiments of the present invention;
图9为本发明一些实施例中对图8所示结构进行化学机械平坦化后的结构示意图；FIG9 is a schematic diagram of the structure of FIG8 after chemical mechanical planarization in some embodiments of the present invention;
图10为本发明一些实施例中去除图9所示结构中硬掩模中的氮化硅后的结构示意图；FIG10 is a schematic diagram of a structure after removing silicon nitride from the hard mask in the structure shown in FIG9 in some embodiments of the present invention;
图11为本发明一些实施例中刻蚀图10中氮化硅后的结构示意图。FIG. 11 is a schematic diagram of the structure after etching the silicon nitride in FIG. 10 in some embodiments of the present invention.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。除非另外定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
针对现有技术存在的问题，本发明的实施例提供了一种鳍形态改善方法。In view of the problems existing in the prior art, an embodiment of the present invention provides a method for improving the fin morphology.
参照图3，所述鳍形态改善方法包括以下步骤：3 , the fin morphology improvement method includes the following steps:
S1：在鳍结构的凹陷处填补氮化硅；S1: Fill the recess of the fin structure with silicon nitride;
S2：在所述鳍结构暴露的表面上生长氧化硅；S2: growing silicon oxide on the exposed surface of the fin structure;
S3：填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽，然后进行退火处理；S3: filling silicon oxide to completely wrap the fin structure and fill the grooves between the fin structures, and then performing annealing;
S4：刻蚀所述氧化硅，以暴露部分所述鳍结构。S4: etching the silicon oxide to expose a portion of the fin structure.
一些实施例中，所述在鳍结构的凹陷处填补氮化硅，包括：在所述鳍结构的表面上形成氮化硅；采用各向异性干法刻蚀工艺将所述鳍结构凹陷处之外的氮化硅去除。其中，通过原子层沉积工艺，在所述鳍结构的表面上形成氮化硅。In some embodiments, filling the recess of the fin structure with silicon nitride comprises: forming silicon nitride on the surface of the fin structure; and removing the silicon nitride outside the recess of the fin structure by an anisotropic dry etching process. The silicon nitride is formed on the surface of the fin structure by an atomic layer deposition process.
一些实施例中，所述在所述鳍结构的表面上形成氮化硅，包括：采用原子层沉积工艺，在所述鳍结构的表面形成氮化硅。In some embodiments, forming silicon nitride on the surface of the fin structure includes: forming silicon nitride on the surface of the fin structure using an atomic layer deposition process.
一些实施例中，所述在所述鳍结构暴露的表面上生长氧化硅，包括：采用水蒸气氧化法或原子层沉积工艺在所述鳍结构暴露的表面上生长氧化硅。In some embodiments, growing silicon oxide on the exposed surface of the fin structure includes: growing silicon oxide on the exposed surface of the fin structure using a water vapor oxidation method or an atomic layer deposition process.
一些实施例中，所述填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽，然后进行退火处理，包括：采用流体化学气相沉积工艺填充氧化硅以完全包裹所述鳍结构以及填充满所述鳍结构之间的沟槽；对所述氧化硅进行水蒸气退火处理。In some embodiments, the silicon oxide is filled to completely wrap the fin structure and fill the grooves between the fin structures, and then annealing is performed, including: using a fluid chemical vapor deposition process to fill the silicon oxide to completely wrap the fin structure and fill the grooves between the fin structures; performing water vapor annealing on the silicon oxide.
一些实施例中，所述刻蚀所述氧化硅，以暴露部分所述鳍结构，包括：采用各向同性刻蚀工艺刻蚀所述氧化硅，以暴露部分所述鳍结构。In some embodiments, etching the silicon oxide to expose a portion of the fin structure includes: etching the silicon oxide using an isotropic etching process to expose a portion of the fin structure.
一些实施例中，当所述鳍结构的顶部具有氮化硅和氧化硅形成的硬掩模时，所述步骤S1，还包括：在所述鳍结构的表面以及硬掩模上形成氮化硅。In some embodiments, when the top of the fin structure has a hard mask formed of silicon nitride and silicon oxide, the step S1 further includes: forming silicon nitride on the surface of the fin structure and the hard mask.
在鳍结构形成的前序工艺中，以采用硬掩模遮挡刻蚀衬底，以形成鳍结构。In the preceding process of forming the fin structure, a hard mask is used to block and etch the substrate to form the fin structure.
图1为现有技术中一种鳍结构的示意图。参照图1，衬底101上具有两个鳍结构102，且每一个所述鳍结构102的两侧均具有一个凹陷1021，且每一个所述鳍结构102的上侧均具有硬掩模，所述硬掩模自上而下的材料分别为氧化硅103、氮化硅104、氧化硅103。Fig. 1 is a schematic diagram of a fin structure in the prior art. Referring to Fig. 1, there are two fin structures 102 on a substrate 101, and each of the two sides of the fin structure 102 has a recess 1021, and each of the upper sides of the fin structure 102 has a hard mask, and the materials of the hard mask from top to bottom are silicon oxide 103, silicon nitride 104, and silicon oxide 103.
图2为现有技术中又一种鳍结构的示意图。参照图2，衬底101上具有两个侧壁弯曲的鳍结构102，且每一个所述鳍结构102的上侧均具有硬掩模103，所述硬掩模自上而下的材料分别为氧化硅103、氮化硅104、氧化硅103。其中，所述鳍结构102侧壁向内弯曲处相当于图1中的凹陷。FIG2 is a schematic diagram of another fin structure in the prior art. Referring to FIG2 , two fin structures 102 with curved sidewalls are provided on a substrate 101, and each of the fin structures 102 has a hard mask 103 on its upper side, and the materials of the hard mask from top to bottom are silicon oxide 103, silicon nitride 104, and silicon oxide 103. The inward curved part of the sidewall of the fin structure 102 is equivalent to the depression in FIG1 .
图4为本发明一些实施例中在图1所述结构的表面形成氮化硅后的结构示意图。通过原子层沉积工艺在所述鳍结构102及所述硬掩模的表面上沉积一层氮化硅104，得到如图4所示结构。Fig. 4 is a schematic diagram of a structure after silicon nitride is formed on the surface of the structure shown in Fig. 1 in some embodiments of the present invention. A layer of silicon nitride 104 is deposited on the surface of the fin structure 102 and the hard mask by an atomic layer deposition process to obtain the structure shown in Fig. 4 .
图5为本发明一些实施例中去除图4所示鳍结构凹陷处之外的氮化硅后的结构示意图。通过干法刻蚀去除所述鳍结构102凹陷1021处之外的氮化硅104，保留所述鳍结构102凹陷1021处的氮化硅104，以实现在所述鳍结构102凹陷1021处填充氮化硅104，得到如图5所示结构。5 is a schematic diagram of a structure after removing the silicon nitride outside the recess of the fin structure shown in FIG4 in some embodiments of the present invention. The silicon nitride 104 outside the recess 1021 of the fin structure 102 is removed by dry etching, and the silicon nitride 104 in the recess 1021 of the fin structure 102 is retained, so as to fill the recess 1021 of the fin structure 102 with silicon nitride 104, and obtain the structure shown in FIG5.
图6为本发明一些实施例中在图5所示鳍结构暴露的表面上生长氧化硅后的结构示意图。采用水蒸气氧化法或原子层沉积工艺氧化所述鳍结构102暴露的硅表面，进而在所述鳍结构102暴露的表面上生长氧化硅103，得到如图6所示结构。其中，由于所述鳍结构102处的氮化硅由原子沉积工艺生成，生成的氮化硅并不稳定，所述鳍结构102凹陷处的部分氮化硅会在生成氧化硅103的过程中被氧化。FIG6 is a schematic diagram of a structure after silicon oxide is grown on the exposed surface of the fin structure shown in FIG5 in some embodiments of the present invention. The exposed silicon surface of the fin structure 102 is oxidized by a water vapor oxidation method or an atomic layer deposition process, and then silicon oxide 103 is grown on the exposed surface of the fin structure 102 to obtain the structure shown in FIG6. In particular, since the silicon nitride at the fin structure 102 is generated by an atomic deposition process, the generated silicon nitride is not stable, and part of the silicon nitride at the recess of the fin structure 102 will be oxidized in the process of generating the silicon oxide 103.
一些实施例中，当所述鳍结构的顶部具有氮化硅和氧化硅形成的硬掩模时，所述步骤S3还包括：所述填充氧化硅以完全包裹所述硬掩模。In some embodiments, when the top of the fin structure has a hard mask formed of silicon nitride and silicon oxide, the step S3 further includes: filling the silicon oxide to completely wrap the hard mask.
图7为本发明一些实施例中在图6所示结构填充氧化硅后的结构示意图。采用流体化学气相沉积工艺填充氧化硅103以完全包裹所述鳍结构102、所述硬掩模以及填充满所述鳍结构102之间的沟槽，得到如图7所示结构。Figure 7 is a schematic diagram of the structure of Figure 6 after silicon oxide is filled in some embodiments of the present invention. Silicon oxide 103 is filled using a fluid chemical vapor deposition process to completely wrap the fin structure 102, the hard mask, and fill the trenches between the fin structures 102, resulting in the structure shown in Figure 7.
图8为本发明一些实施例中对图7所示结构进行水蒸气退火处理后的结构示意图。对所述氧化硅103进行水蒸气退火处理后，所述鳍结构102凹陷处的氮化硅104会被全部或部分氧化成氧化硅，得到如图8所示结构，所述鳍结构102凹陷处的氮化硅104被全部氧化成氧化硅。Fig. 8 is a schematic diagram of the structure of Fig. 7 after water vapor annealing in some embodiments of the present invention. After the silicon oxide 103 is subjected to water vapor annealing, the silicon nitride 104 in the recess of the fin structure 102 will be completely or partially oxidized into silicon oxide, resulting in a structure as shown in Fig. 8, in which the silicon nitride 104 in the recess of the fin structure 102 is completely oxidized into silicon oxide.
一些实施例中，当所述鳍结构的顶部具有氮化硅和氧化硅形成的硬掩模时，执行所述步骤S3和所述步骤S4之间，还包括：对所述硬掩模中氮化硅上侧的氧化硅进行化学机械平坦化，以暴露所述硬掩模中的氮化硅。In some embodiments, when the top of the fin structure has a hard mask formed of silicon nitride and silicon oxide, between executing step S3 and step S4, it also includes: chemically mechanically planarizing the silicon oxide on the upper side of the silicon nitride in the hard mask to expose the silicon nitride in the hard mask.
图9为本发明一些实施例中对图8所示结构进行化学机械平坦化后的结构示意图。对氧化硅103进行化学机械平坦化，暴露所述硬掩模中的氮化硅104，得到如图9所示结构。Fig. 9 is a schematic diagram of a structure after chemical mechanical planarization is performed on the structure shown in Fig. 8 in some embodiments of the present invention. Chemical mechanical planarization is performed on the silicon oxide 103 to expose the silicon nitride 104 in the hard mask, thereby obtaining the structure shown in Fig. 9 .
一些实施例中，所述对所述硬掩模中氮化硅上侧的氧化硅进行化学机械平坦化后，还包括：进行退火处理，以提高所述氧化硅的膜质。In some embodiments, after chemically mechanically planarizing the silicon oxide on the upper side of the silicon nitride in the hard mask, the method further includes: performing an annealing treatment to improve the film quality of the silicon oxide.
一些实施例中，执行所述步骤S3和所述步骤S4之间，还包括：采用湿法去除所述硬掩模中的氮化硅。In some embodiments, between executing step S3 and step S4, the step further includes: removing the silicon nitride in the hard mask by a wet method.
图10为本发明一些实施例中去除图9所示结构中硬掩模中的氮化硅后的结构示意图。采用湿法去除所述硬掩模中的氮化硅104，以得到如图10所示结构。Fig. 10 is a schematic diagram of a structure after removing silicon nitride from the hard mask in the structure shown in Fig. 9 in some embodiments of the present invention. The silicon nitride 104 in the hard mask is removed by a wet method to obtain the structure shown in Fig. 10 .
图11为本发明一些实施例中刻蚀图10中氮化硅后的结构示意图。采用各向同性刻蚀工艺刻蚀所述氧化硅103，以暴露部分所述鳍结构102，得到如图11所示结构。若所述鳍结构102凹陷处的氮化硅仅部分被氧化成氧化硅，采用各项同性刻蚀工艺刻蚀所述氮化硅103的同时，所述鳍结构102凹陷处的氮化硅会被一同刻蚀掉。FIG11 is a schematic diagram of the structure after etching the silicon nitride in FIG10 in some embodiments of the present invention. The silicon oxide 103 is etched using an isotropic etching process to expose a portion of the fin structure 102, thereby obtaining a structure as shown in FIG11. If the silicon nitride in the recess of the fin structure 102 is only partially oxidized to silicon oxide, the silicon nitride in the recess of the fin structure 102 will be etched away together with the silicon nitride 103 when the isotropic etching process is used to etch the silicon nitride.
虽然在上文中详细说明了本发明的实施方式，但是对于本领域的技术人员来说显而易见的是，能够对这些实施方式进行各种修改和变化。但是，应理解，这种修改和变化都属于权利要求书中所述的本发明的范围和精神之内。而且，在此说明的本发明可有其它的实施方式，并且可通过多种方式实施或实现。Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.
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