CN113851458A - Integrated photoelectric detection sensor, manufacturing method thereof and electronic equipment - Google Patents
Integrated photoelectric detection sensor, manufacturing method thereof and electronic equipmentDownload PDFInfo
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- H—ELECTRICITY
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- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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Abstract
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an integrated photoelectric detection sensor, a manufacturing method thereof and electronic equipment.
Background
With the rapid development of science and technology, the application of photoelectric reflection sensors is becoming more and more extensive, for example, heart rate detection and blood oxygen detection in the aspect of medical treatment, and the application of distance approach detection function to service robots in various fields (such as sweeping robots, logistics robots, contactless delivery robots, AGV unmanned transfer robots, etc.). For a remote detection sensor, a light emitting chip and a light signal receiving chip can be generally packaged separately, but with the development trend of integration and miniaturization, the existing integrated photoelectric detection sensor is easy to have the problems of transverse crosstalk of internal signals, detection misjudgment and the like.
Disclosure of Invention
The invention aims to provide an integrated photoelectric detection sensor, a manufacturing method thereof and electronic equipment, and aims to solve the problem that the integrated photoelectric detection sensor in the prior art is easy to generate internal signal crosstalk.
In order to achieve the purpose, the invention adopts the technical scheme that:
in a first aspect, the present invention provides an integrated photodetection sensor, comprising:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the substrate is further provided with:
the first light avoiding body is covered on the first installation position, a first opening is formed in the top end of the first light avoiding body, and colloid can be injected into the inner area of the first light avoiding body through the first opening to form a first protective adhesive layer;
the second light avoiding body is covered on the second installation position, a second opening is formed in the top end of the second light avoiding body, and colloid can be injected into the inner area of the second light avoiding body through the second opening to form a second protective adhesive layer;
the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit and allow the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the optical signal of the light emitting unit from passing through.
In one embodiment, the light-shielding part of the first light-shielding body is fixed on the substrate and forms a first accommodating cavity for accommodating the light-emitting unit with the substrate, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer;
the light-avoiding part of the second light-avoiding body is fixed on the substrate and forms a second accommodating cavity for accommodating the optical signal receiving unit with the substrate, so that the colloid can be injected into the second accommodating cavity to form a second protective adhesive layer.
In one embodiment, the first light avoiding body and the second light avoiding body form a bowl-cup type structure with the substrate, and the light avoiding portion of the first light avoiding body and the light avoiding portion of the second light avoiding body are both black.
In one embodiment, the light-avoiding portion of the first light-avoiding body comprises a first light-avoiding portion, a second light-avoiding portion, a third light-avoiding portion and a fourth light-avoiding portion, and the first light-avoiding portion, the second light-avoiding portion, the third light-avoiding portion and the fourth light-avoiding portion surround the light emitting unit to form a rectangular area with openings at the upper end and the lower end;
the light-avoiding part of the second light-avoiding body comprises a fifth light-avoiding part, a sixth light-avoiding part, a seventh light-avoiding part and an eighth light-avoiding part, and the fifth light-avoiding part, the sixth light-avoiding part, the seventh light-avoiding part and the eighth light-avoiding part surround the optical signal receiving unit to form a rectangular area with openings at the upper end and the lower end.
In one embodiment, an ambient light filtering material or a band-pass material is mixed in each of the first protective adhesive layer and the second protective adhesive layer, the ambient light filtering material is used for filtering optical signals which can generate interference in the external environment of the photodetection sensor, and the band-pass material is capable of allowing light of a specific waveband to pass through.
In one embodiment, the upper surface of the substrate is covered with a third protective adhesive layer, and the third protective adhesive layer covers the first light avoiding body and the second light avoiding body;
wherein the third protective adhesive layer allows the optical signal of the light emitting unit to pass through.
In one embodiment, the upper surface of the substrate is provided with a first conductive potential, a first conductive connection site and a second conductive potential, a second conductive connection site, the first mounting site is arranged at the first conductive potential, and the second mounting site is arranged at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
In one embodiment, the lower surface of the substrate is provided with a third conducting potential, a third conducting connection site, a fourth conducting potential and a fourth conducting connection site which are respectively in one-to-one correspondence with the first conducting potential, the first conducting connection site, the second conducting potential and the second conducting connection site;
and a first through hole for connecting the first conductive potential and the third conductive potential, a second through hole for connecting the first conductive connecting position and the third conductive connecting position, a third through hole for connecting the second conductive connecting position and the fourth conductive connecting position and a fourth through hole for connecting the second conductive connecting position and the fourth conductive connecting position are respectively arranged on two sides of the substrate.
In a second aspect, the present invention further provides a method for manufacturing an integrated photodetection sensor, including:
providing a substrate provided with a first mounting position and a second mounting position; the substrate is further provided with a first light avoiding body and a second light avoiding body, the first light avoiding body is arranged at the first installation position, the top end of the first light avoiding body is provided with a first opening, the second light avoiding body is covered at the second installation position, and the top end of the second light avoiding body is provided with a second opening;
fixing a light emitting unit and a light signal receiving unit to a first mounting position and a second mounting position of the substrate, respectively;
injecting colloid to the upper surface of the substrate by using a glue injection device so as to form a protective glue layer on the upper surface of the substrate and the inner areas of the first light avoiding body and the second light avoiding body; or injecting colloid into the inner areas of the first and second light avoiding bodies through the first and second openings, respectively, by using a glue injection device, so as to form a protective glue layer in the inner areas of the first and second light avoiding bodies, respectively;
cutting off the protective glue layers around the light emitting unit and the light signal receiving unit through cutting equipment to form a glue filling position of the light barrier glue layer; or, a first protective adhesive layer and a second protective adhesive layer with optical barrier adhesive layer glue filling positions are formed in one step through a special die;
the protective adhesive layer covers the light emitting unit and the optical signal receiving unit and allows the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the optical signal of the light emitting unit from passing through.
In a third aspect, the present invention provides an electronic device, where the electronic device includes the integrated photodetection sensor, or the electronic device includes the photodetection sensor manufactured by the above manufacturing method.
The integrated photoelectric detection sensor provided by the invention has the beneficial effects that:
(1) according to the photoelectric detection sensor provided by the embodiment of the invention, the first shielding cover and the second shielding cover are arranged on the substrate, and the light-avoiding parts of the first light-avoiding body and the second light-avoiding body are used for preventing light signals of the light-emitting unit from passing through, so that the transverse crosstalk of internal signals is eliminated or greatly reduced, and the detection accuracy is greatly improved.
(2) The invention can also prevent the ambient light which can interfere the detection signal from passing through the colloid by mixing various functional materials, such as ambient light filtering materials, in the protective adhesive layer poured on the substrate, thereby further improving the accuracy of the detection result and improving the overall performance of the photoelectric detection sensor.
(3) The photoelectric detection sensor packaging structure is simple, the process implementation mode is flexible and adjustable, and the materials used for packaging and the packaging size can be flexibly adjusted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic overall structure diagram of a photodetection sensor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention (the first light-shielding body and the second light-shielding body are omitted in the drawing);
fig. 4 is a main flowchart of a method for manufacturing a photodetection sensor according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.
Referring first to fig. 1, fig. 1 is a schematic view of an overall structure of a photoelectric detection sensor according to an embodiment of the present invention. As shown in fig. 1, the photodetection sensor provided in the present embodiment mainly includes asubstrate 1, a firstlight avoiding body 2, and a secondlight avoiding body 3.
The upper surface of thesubstrate 1 is provided with afirst mounting position 11 and asecond mounting position 12, thefirst mounting position 11 is fixed with thelight emitting unit 100, and the second mounting position is fixed with the lightsignal receiving unit 200. As an example, thelight Emitting unit 100 may be an LED or a VCSEL (Vertical Cavity Surface Emitting Laser), the chip structure may be Vertical or flip chip, and the chip structure may be an infrared Emitting chip or a green Emitting chip according to different applications, but is not limited to these types of chips, and those skilled in the art may select different bands and different types of chips according to actual applications, and this embodiment is not limited to this. The opticalsignal receiving unit 200 may be a photodiode or a phototransistor, but is not limited to the photodiode or the phototransistor, and may also be a dedicated ASIC (Application Specific Integrated Circuit) chip, which can be flexibly selected by those skilled in the art according to actual needs, and the embodiment does not limit the present invention. The shape of thesubstrate 1 can be flexibly adjusted as required. In addition, in the present embodiment, thesubstrate 1 may be a square or rectangular parallelepiped having a certain thickness, the upper surface and the lower surface are square or rectangular, that is, the upper surface and the lower surface of thesubstrate 1 are opposite, thelight emitting unit 100 and the lightsignal receiving unit 200 are disposed on the same surface of the substrate 1 (that is, on the same surface or on the same surface of the lower surface), and since the upper surface and the lower surface of thesubstrate 1 are opposite, disposing thelight emitting unit 100 and the lightsignal receiving unit 200 on the upper surface of thesubstrate 1 in the present embodiment does not mean limiting thelight emitting unit 100 and the lightsignal receiving unit 200 on a certain surface of thesubstrate 1, in other words, disposing thelight emitting unit 100 and the lightsignal receiving unit 200 on the same surface of thesubstrate 1 in the present embodiment is sufficient. It should be noted that thelight emitting unit 100 and the lightsignal receiving unit 200 of the present embodiment may be fixed on thesubstrate 1, that is, thelight emitting unit 100, the lightsignal receiving unit 200 and thesubstrate 1 are two separate components; in addition, thelight emitting unit 100 and the lightsignal receiving unit 200 of the present embodiment can also be directly covered inside thesubstrate 1, i.e. integrated with thesubstrate 1.
The first and secondlight avoiding bodies substrate 1. The firstlight avoiding body 2 is covered on thefirst installation position 11, the top end of the firstlight avoiding body 2 is provided with a first opening, and colloid can be injected into the inner area of the firstlight avoiding body 2 through the first opening to form a first protective adhesive layer; the secondlight avoiding body 3 is covered on thesecond mounting position 12, a second opening is formed in the top end of the secondlight avoiding body 2, and colloid can be injected into the inner area of the secondlight avoiding body 3 through the second opening to form a second protective adhesive layer. Wherein the first protective adhesive layer and the second protective adhesive layer respectively cover thelight emitting unit 100 and the lightsignal receiving unit 200, and allow the light signal of thelight emitting unit 100 to pass through. The light-shielding portions of the first light-shielding body 2 and the second light-shielding body 3 are used for preventing the light signal of the light-emittingunit 100 from passing through. As an example, the light-shielding portion of the first light-shieldingbody 2 is fixed on thesubstrate 1, and forms a first accommodating cavity for accommodating the light-emittingunit 100 with thesubstrate 1, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer; the light-avoiding part of the second light-avoidingbody 3 is fixed on thesubstrate 1 and forms a second accommodating cavity for accommodating the optical signal receiving unit with thesubstrate 1, so that the colloid can be injected into the second accommodating cavity to form a second protective adhesive layer.
As an example, the first protective adhesive layer and the second protective adhesive layer are generally transparent silicone or transparent epoxy, but are not limited to transparent silicone or transparent epoxy, and those skilled in the art may also select other materials with similar properties, so that the first protective adhesive layer and the second protective adhesive layer not only can protect theoptical transmitting unit 100 and the opticalsignal receiving unit 200, thereby improving the reliability and stability of the package, but also can allow the optical signal in the wavelength band emitted by theoptical transmitting unit 100 to pass through. Optionally, other functional materials, such as an ambient light filtering material or a band-pass material, may be mixed in the first protective adhesive layer and the second protective adhesive layer, wherein the ambient light filtering material functions to prevent ambient light signals that may cause interference from passing through, and the band-pass material allows light of a specific wavelength band to pass through. Therefore, the first protective adhesive layer and the second protective adhesive layer can prevent the ambient light which interferes with the detection signal from passing through the colloid, so that the accuracy of the detection result of the photoelectric detection sensor is improved, and the overall performance of the photoelectric detection sensor is improved. In this embodiment, the functional materials that can be mixed in the first protective adhesive layer and the second protective adhesive layer are not limited to the above two materials, and those skilled in the art can flexibly select other functional materials according to the application requirements, which is not limited in this embodiment.
As an example, referring to fig. 2, fig. 2 is a schematic structural diagram of a substrate of a photodetection sensor according to an embodiment of the present description. As shown in fig. 2, the first and second light-shieldingbodies substrate 1, and the light-shielding portions of the first and second light-shieldingbodies body 2 include a first light-avoidingportion 21, a second light-avoidingportion 22, a third light-avoidingportion 23, and a fourth light-avoidingportion 24; the firstlight avoiding portion 21, the secondlight avoiding portion 22, the thirdlight avoiding portion 23 and the fourthlight avoiding portion 24 surround thelight emitting unit 100 to form a rectangular area (as shown in fig. 2) with openings at the upper and lower ends; the light shielding portions of the secondlight shielding body 3 include a fifthlight shielding portion 31, a sixthlight shielding portion 32, a seventhlight shielding portion 33, and an eighthlight shielding portion 34, and the fifthlight shielding portion 31, the sixthlight shielding portion 32, the seventhlight shielding portion 33, and the eighthlight shielding portion 34 surround the opticalsignal receiving unit 200 to form a rectangular area (as shown in fig. 2) with openings at upper and lower ends. It should be noted that the specific forms of the first light-shieldingbody 2 and the second light-shieldingbody 3 in this embodiment may be flexibly designed according to practical applications, such as the aforementioned bowl-cup type, rectangular frame, or other forms of structures, and the specific forms of the first light-shieldingbody 2 and the second light-shieldingbody 3 are not limited in this embodiment.
Further, the upper surface of thesubstrate 1 may further cover a third protective adhesive layer, and the third protective adhesive layer covers the firstlight avoiding body 2 and the secondlight avoiding body 3; wherein the third protective adhesive layer allows the optical signal of thelight emitting unit 100 to pass through. That is, a protective glue layer is also injected into the region of the upper surface of thesubstrate 1, which is located outside the first light-shieldingbody 2 and the second light-shieldingbody 3, so as to further improve the reliability and stability of the package. The hatched area in fig. 1 is the injected protective adhesive layer (including the first protective adhesive layer located in the firstlight avoiding body 2, the second protective adhesive layer located in the secondlight avoiding body 3, and the third protective adhesive layer located in the area outside the firstlight avoiding body 2 and the second light avoiding body 3).
As described above, in the photodetection sensor provided in this embodiment, thefirst shielding cover 2 and thesecond shielding cover 3 are disposed on thesubstrate 1, and the light-shielding portions of the first light-shieldingbody 2 and the second light-shieldingbody 3 are used to prevent the optical signal of the light-emittingunit 100 from passing through, so as to eliminate or greatly reduce the lateral crosstalk of the internal signal, thereby greatly improving the accuracy of detection; various functional materials such as an ambient light filtering material can be mixed in the protective adhesive layer poured into thesubstrate 1, so that ambient light which can interfere with detection signals is prevented from passing through the colloid, the accuracy of detection results is further improved, and the overall performance of the photoelectric detection sensor is improved.
In manufacturing the photodetection sensor of the present embodiment, first, thesubstrate 1 provided with the first mountingsite 11 and the second mountingsite 12 is provided. Wherein, be provided with first light-avoidingbody 2 and second light-avoidingbody 3 on thebase plate 1, first light-avoidingbody 2 covers and is locatedfirst installation position 11, and the top of first light-avoidingbody 2 has first opening, and second light-avoidingbody 3 covers and locatessecond installation position 12, and the top setting of second light-avoidingbody 3 has the second opening. Then, thelight emitting unit 100 and the lightsignal receiving unit 200 are respectively fixed to the first mountingposition 11 and the second mountingposition 12 of thesubstrate 1, and then glue is injected to the upper surface of thesubstrate 1 by using glue injection equipment, so that a protective glue layer is formed on the upper surface of thesubstrate 1 and the inner areas of the firstlight avoiding body 2 and the secondlight avoiding body 3; or glue is injected into the inner areas of the first and secondlight avoiding bodies light avoiding bodies bodies bodies substrate 1 may be placed in a dedicated Molding filling device, and a protective adhesive layer may be obtained by applying a glue filling Molding, or a protective adhesive may be formed on thesubstrate 1 by a dispensing method. In some embodiments, the protective glue layer around thelight emitting unit 100 and the lightsignal receiving unit 200 is cut off by a cutting device to form a glue filling site of the light barrier glue layer. Or, a first protective adhesive layer and a second protective adhesive layer with light barrier adhesive layer glue filling positions are formed in one step through a special die. Due to the flexibility of the process, the overall packaging size of the photoelectric detection sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.
In a more specific embodiment, the upper surface and the lower surface of thesubstrate 1 of the present embodiment are each provided with four conductive potentials. Specifically, referring to fig. 3, fig. 3 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention (the first light-shielding body and the second light-shielding body are omitted in the figure). As shown in fig. 3, a firstconductive potential 101, a first connectionconductive potential 102, a secondconductive potential 103, and a second connection conductive potential 104 are provided on the upper surface of thesubstrate 1, the first mountingsite 11 is provided on the firstconductive potential 101, and the second mountingsite 12 is provided on the secondconductive potential 103; wherein thelight emitting unit 100 at the first mountinglocation 11 is in communication with the firstconductive connection 102 via a firstconductive line 105, and the lightsignal receiving unit 200 at the second mountinglocation 12 is in communication with the secondconductive connection 104 via a secondconductive line 106. The position of the first mountingsite 11 at the firstconductive potential 102, and the second mountingsite 12 at the secondconductive potential 103, can be flexibly adjusted according to practical applications, in other words, it can also be understood that thelight emitting unit 100 and the lightsignal receiving unit 200 are directly fixed to the firstconductive potential 102 and the secondconductive potential 103, respectively.
The lower surface of thesubstrate 1 is provided with a third conduction potential, a third connection conduction potential, a fourth conduction potential, and a fourth connection conduction potential (not shown) corresponding to thefirst conduction potential 101, the firstconnection conduction potential 102, thesecond conduction potential 103, and the secondconnection conduction potential 104, respectively. And a first via 1001 for connecting the firstconductive potential 101 and the third conductive potential, a second via 1002 for connecting the first connectionconductive potential 102 and the third connection conductive potential, a third via 1003 for connecting the secondconductive potential 103 and the fourth conductive potential, and a fourth via 1004 for connecting the second connectionconductive potential 104 and the fourth connection conductive potential are provided on both sides of thesubstrate 1, respectively. These through holes may serve to electrically connect the upper and lower conductive sites of thesubstrate 1. Optionally, the shapes and sizes of the four conductive potentials disposed on the upper surface and the lower surface of thesubstrate 1 may be flexibly adjusted according to practical applications or heat dissipation requirements, which is not limited in this embodiment.
According to the above-described design, in manufacturing the photodetection sensor, after thelight emitting unit 100 and the opticalsignal receiving unit 200 are respectively fixed to thesubstrate 1, thelight emitting unit 100 and the opticalsignal receiving unit 200 are further respectively connected to the first connectionconductive potential 102 and the second connectionconductive potential 104 of thesubstrate 1 through the firstconductive line 105 and the secondconductive line 106, and then the subsequent operation of the glue injection process is performed. It should be noted that the photoelectric detection sensor of the present embodiment is not limited to the above-mentioned design (i.e. the way of setting four conductive potentials on the upper and lower surfaces of thesubstrate 1 and then connecting thelight emitting unit 100 and the lightsignal receiving unit 200 through the conductive wires), and those skilled in the art can flexibly design thesubstrate 1, thelight emitting unit 100 and the lightsignal receiving unit 200 according to actual needs without departing from the protection scope of the present specification.
Referring to fig. 4, fig. 4 is a main flowchart of a method for manufacturing a photoelectric detection sensor according to an embodiment of the present invention. As shown in fig. 4, the method includes:
s410: asubstrate 1 provided with a first mountinglocation 11 and a second mountinglocation 12 is provided.
Thesubstrate 1 is further provided with a first light-avoidingbody 2 and a second light-avoidingbody 3, the first light-avoidingbody 2 is covered on thefirst installation position 11, a first opening is formed in the top end of the first light-avoidingbody 2, the second light-avoidingbody 3 is covered on thesecond installation position 12, and a second opening is formed in the top end of the second light-avoidingbody 3. For a specific exemplary structure of thesubstrate 1, reference may be made to the above description of the structure of thesubstrate 1, and details are not repeated here.
S420: thelight emitting unit 100 and the lightsignal receiving unit 200 are fixed to the first mountinglocation 11 and the second mountinglocation 12 of thesubstrate 1, respectively.
In this step, the above description is referred to for thelight emitting unit 100 and the lightsignal receiving unit 200, and is not repeated here.
S430: injecting glue into the upper surface of thesubstrate 1 by using glue injection equipment to form a protective glue layer on the upper surface of thesubstrate 1 and the inner areas of the firstlight avoiding body 2 and the secondlight avoiding body 3; or injecting colloid into the inner areas of the first and secondlight avoiding bodies light avoiding bodies
Wherein the protective adhesive layer covers the light emitting unit and the opticalsignal receiving unit 200, and allows the optical signal of thelight emitting unit 100 to pass through; the light-shielding portion of the first light-shieldingbody 2 and the light-shielding portion of the second light-shieldingbody 3 are used for preventing the light signal of the light-emittingunit 100 from passing through.
For a more detailed description of the manufacturing method, reference may be made to the above description of the photodetection sensor, and details are not repeated here.
Based on the same inventive concept, the embodiment further provides an electronic device, which includes the integrated photoelectric detection sensor, or includes the integrated photoelectric detection sensor manufactured by the manufacturing method.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An integrated photodetection sensor, characterized in that it comprises:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the substrate is further provided with:
the first light avoiding body is arranged at the first installation position, a first opening is formed in the top end of the first light avoiding body, and colloid can be injected into the inner area of the first light avoiding body through the first opening to form a first protective adhesive layer;
the second light avoiding body is covered on the second installation position, a second opening is formed in the top end of the second light avoiding body, and colloid can be injected into the inner area of the second light avoiding body through the second opening to form a second protective adhesive layer;
the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit and allow the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the optical signal of the light emitting unit from passing through.
2. The photoelectric detection sensor according to claim 1, wherein the light-shielding portion of the first light-shielding body is fixed to the substrate and forms a first accommodating cavity with the substrate for accommodating the light-emitting unit, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer;
the light-avoiding part of the second light-avoiding body is fixed on the substrate and forms a second accommodating cavity for accommodating the optical signal receiving unit with the substrate, so that the colloid can be injected into the second accommodating cavity to form a second protective adhesive layer.
3. The photoelectric detection sensor according to claim 1, wherein the first light-shielding body and the second light-shielding body form a bowl-cup structure with the substrate, and the light-shielding portion of the first light-shielding body and the light-shielding portion of the second light-shielding body are both black.
4. The photoelectric detection sensor according to claim 1, wherein the light shielding portion of the first light shielding body includes a first light shielding portion, a second light shielding portion, a third light shielding portion, and a fourth light shielding portion, and the first light shielding portion, the second light shielding portion, the third light shielding portion, and the fourth light shielding portion surround the light emitting unit to form a rectangular area with openings at upper and lower ends;
the light-avoiding part of the second light-avoiding body comprises a fifth light-avoiding part, a sixth light-avoiding part, a seventh light-avoiding part and an eighth light-avoiding part, and the fifth light-avoiding part, the sixth light-avoiding part, the seventh light-avoiding part and the eighth light-avoiding part surround the optical signal receiving unit to form a rectangular area with openings at the upper end and the lower end.
5. The photodetection sensor according to claim 1, wherein an ambient light filtering material or a band-pass material is mixed in each of the first protective adhesive layer and the second protective adhesive layer, the ambient light filtering material is used for filtering an optical signal that can generate interference from the external environment of the photodetection sensor, and the band-pass material is capable of passing light of a specific wavelength band.
6. The photodetection sensor according to any one of claims 1 to 5, wherein an upper surface of the substrate is covered with a third protective adhesive layer, and the third protective adhesive layer covers the first light avoiding body and the second light avoiding body;
wherein the third protective adhesive layer allows the optical signal of the light emitting unit to pass through.
7. The photodetection sensor according to any one of claims 1 to 5, wherein a first conductive potential, a first conductive connection site, and a second conductive potential, a second conductive connection site are provided on the upper surface of the substrate, the first mounting site is provided at the first conductive potential, and the second mounting site is provided at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
8. The photodetection sensor according to claim 7, wherein the lower surface of the substrate is provided with a third conducting potential, a third conducting connection site, a fourth conducting potential, and a fourth conducting connection site, which are respectively in one-to-one correspondence with the first conducting potential, the first conducting connection site, the second conducting potential, and the second conducting connection site;
and a first through hole for connecting the first conductive potential and the third conductive potential, a second through hole for connecting the first conductive connecting position and the third conductive connecting position, a third through hole for connecting the second conductive connecting position and the fourth conductive connecting position and a fourth through hole for connecting the second conductive connecting position and the fourth conductive connecting position are respectively arranged on two sides of the substrate.
9. A method for manufacturing an integrated photoelectric detection sensor is characterized by comprising the following steps:
providing a substrate provided with a first installation position and a second installation position, wherein a first light avoiding body and a second light avoiding body are further arranged on the substrate, the first light avoiding body is covered on the first installation position, a first opening is formed in the top end of the first light avoiding body, the second light avoiding body is covered on the second installation position, and a second opening is formed in the top end of the second light avoiding body;
fixing a light emitting unit and a light signal receiving unit to a first mounting position and a second mounting position of the substrate, respectively;
injecting colloid to the upper surface of the substrate by using a glue injection device so as to form a protective glue layer on the upper surface of the substrate and the inner areas of the first light avoiding body and the second light avoiding body; or injecting colloid into the inner areas of the first and second light avoiding bodies through the first and second openings, respectively, by using a glue injection device, so as to form a protective glue layer in the inner areas of the first and second light avoiding bodies, respectively;
cutting off the protective glue layers around the light emitting unit and the light signal receiving unit through cutting equipment to form a glue filling position of the light barrier glue layer; or, a first protective adhesive layer and a second protective adhesive layer with optical barrier adhesive layer glue filling positions are formed in one step through a special die;
the protective adhesive layer covers the light emitting unit and the optical signal receiving unit and allows the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the optical signal of the light emitting unit from passing through.
10. An electronic device comprising the integrated photodetection sensor according to any one of claims 1 to 8;
alternatively, the electronic device comprises an integrated photoelectric detection sensor manufactured by the manufacturing method of claim 9.
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