技术领域Technical field
本发明涉及透明薄膜电极的技术领域，尤其涉及一种薄膜电极及其制备方法和应用。The present invention relates to the technical field of transparent thin film electrodes, and in particular to a thin film electrode and its preparation method and application.
背景技术Background technique
导电薄膜是一种能导电的薄膜，例如纳米金属线导电薄膜和ITO膜，现广泛应用于显示器、触控屏等领域。Conductive film is a film that can conduct electricity, such as nanometal wire conductive film and ITO film. It is now widely used in displays, touch screens and other fields.
然而，上述导电薄膜不论是使用纳米金属线还是使用ITO(氧化铟锡，Indium tinoxide)材料，将其制备成电极的工艺中需要采用激光蚀刻或黄光蚀刻的方式制成导电线路，而两种蚀刻方式都有其弊端：激光蚀刻的方式所需要的激光设备成本高，生产效率慢，产能低；黄光蚀刻的方式用到的蚀刻液长期使用对人体有一定伤害，环境污染严重，而且该工艺复杂，最终产品良率低。此外，采用蚀刻方式制备的电极消影差，因为蚀刻区域的导电物质被蚀刻掉，才使该区域不导电，而未蚀刻的区域的纳米金属线或ITO被保留，成为导电区域，这导致两区域的纳米导电物质的含量存在巨大差异，直接引起透光率和雾度的差别，导致以此种蚀刻方式制备的导电电极消影差，做成显示器或触控屏的显示效果差。However, whether the above-mentioned conductive films are made of nanometal wires or ITO (Indium tin oxide) materials, the process of preparing them into electrodes requires laser etching or yellow light etching to make conductive circuits, and both Etching methods have their disadvantages: the laser equipment required for laser etching is high in cost, slow in production efficiency, and low in production capacity; the etching liquid used in yellow light etching is harmful to the human body after long-term use, and the environment is seriously polluted. The process is complex and the final product yield is low. In addition, electrodes prepared by etching have poor achroma because the conductive material in the etched area is etched away, making the area non-conductive, while the nanometal wires or ITO in the unetched area are retained and become a conductive area, which results in two There is a huge difference in the content of nano-conductive substances in the region, which directly causes differences in light transmittance and haze, resulting in poor fading of conductive electrodes prepared by this etching method, and poor display effects in displays or touch screens.
有鉴于此，需要提出一种新的技术方案来解决上述技术问题。In view of this, a new technical solution needs to be proposed to solve the above technical problems.
发明内容Contents of the invention
本发明的目的在于解决现有技术由于采用蚀刻技术来制作薄膜电极、导致导电区域与非导电区域物质含量差别巨大，进而带来产品消影效果差、且制作工艺复杂、成本高、危害大的技术问题，提供一种薄膜电极及其制备方法和应用，达到产品消影效果佳，显示效果佳，且制作工艺简单、高效、成本低的目的。The purpose of the present invention is to solve the problem in the prior art that due to the use of etching technology to make thin film electrodes, the material content of the conductive area and the non-conductive area is hugely different, which in turn leads to poor elimination effect of the product, complex manufacturing process, high cost, and great harm. The technical problem is to provide a thin film electrode and its preparation method and application, so as to achieve the purpose of good product elimination effect, good display effect, simple production process, high efficiency and low cost.
为实现上述目的，本发明采用以下技术手段：In order to achieve the above objects, the present invention adopts the following technical means:
本发明的第一方面提供一种薄膜电极，包括基材层；A first aspect of the present invention provides a thin film electrode, including a substrate layer;
所述基材层表面设有电极层，所述电极层内分布有纳米金属线或ITO；所述电极层分为导电区域和绝缘区域，且所述导电区域按照预设线路分布；An electrode layer is provided on the surface of the base material layer, and nanometal wires or ITO are distributed in the electrode layer; the electrode layer is divided into a conductive area and an insulating area, and the conductive area is distributed according to preset lines;
其中，在所述导电区域对应的电极层内，所述纳米金属线之间相互连接形成一体；在所述绝缘区域对应的电极层内，所述纳米金属线之间存在裂纹，以使该区域不导电。Wherein, in the electrode layer corresponding to the conductive area, the nano-metal wires are connected to each other to form a whole; in the electrode layer corresponding to the insulating area, there are cracks between the nano-metal wires, so that this area Does not conduct electricity.
作为进一步的改进，所述基材层包括柔性基材层或刚性基材层；As a further improvement, the base material layer includes a flexible base material layer or a rigid base material layer;
所述柔性基材层的材质包括PET、PEN或PI；The material of the flexible substrate layer includes PET, PEN or PI;
所述刚性基材层的材质包括玻璃、PMMA或石英板；The material of the rigid substrate layer includes glass, PMMA or quartz plate;
所述纳米金属线包括纳米银线、纳米铜线或纳米金线。The nanometal wires include nanosilver wires, nanocopper wires or nanogold wires.
作为进一步的改进，还包括保护层，所述保护层铺设在所述电极层表面，或设置在所述电极层表层内。As a further improvement, a protective layer is also included. The protective layer is laid on the surface of the electrode layer or is arranged in the surface layer of the electrode layer.
作为进一步的改进，所述保护层的材质包括热固性树脂、光固化树脂中的至少一种；As a further improvement, the material of the protective layer includes at least one of thermosetting resin and light-curing resin;
所述热固性树脂包括酚醛树脂、环氧树脂、不饱和聚酯、氨基树脂、硅醚树脂、呋喃树脂、聚丁二烯树脂、有机硅树脂中的一种或多种；The thermosetting resin includes one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin, and silicone resin;
所述光固化树脂包括环氧丙烯酸树脂、聚氨酯丙烯酸树脂、聚酯丙烯酸树脂、聚醚丙烯酸树脂、纯丙烯酸树脂、乙烯基树脂中的一种或多种。The photocurable resin includes one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin, and vinyl resin.
本发明的第二方面提供一种薄膜电极的制备方法，包括如下步骤：A second aspect of the present invention provides a method for preparing a thin film electrode, which includes the following steps:
S1、制备导电层材料：所述导电层材料包括纳米金属线、溶剂及分散剂；S1. Prepare conductive layer materials: the conductive layer materials include nanometal wires, solvents and dispersants;
S2、制备溶胶层材料：该溶胶层材料包括氧化锆溶胶、二氧化钛溶胶、氧化锌溶胶、二氧化硅溶胶中的一种或多种；S2. Prepare sol layer material: the sol layer material includes one or more of zirconium oxide sol, titanium dioxide sol, zinc oxide sol, and silica sol;
S3、在基材层表面涂覆所述导电层材料，表干形成导电层；再按照预设图案在所述导电层表面涂覆所述溶胶层材料，形成溶胶层；S3. Coat the conductive layer material on the surface of the base material layer and dry it to form a conductive layer; then apply the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
S4、烘烤所述基材层，使所述导电层和所述溶胶层固化形成电极层，从而得到薄膜电极；S4. Bake the base material layer to solidify the conductive layer and the sol layer to form an electrode layer, thereby obtaining a thin film electrode;
所述步骤S1、S2顺序可调换或同时进行。The order of steps S1 and S2 can be exchanged or performed simultaneously.
作为进一步的改进，还包括以下步骤：As a further improvement, the following steps are also included:
S5、制备保护层材料；S5. Prepare protective layer materials;
所述步骤S5设置在所述步骤S3之前，且步骤S1、S2和S5三者的顺序可任意调换或同时进行；The step S5 is set before the step S3, and the order of the three steps S1, S2 and S5 can be arbitrarily exchanged or performed simultaneously;
所述保护层材料可以涂覆在所述溶胶层外表面，也可以涂覆在所述导电层与所述溶胶层之间。The protective layer material may be coated on the outer surface of the sol layer, or may be coated between the conductive layer and the sol layer.
作为进一步的改进，所述表干温度不超过60℃；As a further improvement, the surface dry temperature does not exceed 60°C;
所述烘烤固化的温度为120-150℃。The baking and curing temperature is 120-150°C.
作为进一步的改进，所述纳米金属线包括纳米银线、纳米铜线或纳米金线；As a further improvement, the nanometal wires include nanosilver wires, nanocopper wires or nanogold wires;
所述溶剂包括醇类、醚类、酯类、酮类、烃类中的一种或多种；The solvent includes one or more of alcohols, ethers, esters, ketones, and hydrocarbons;
所述分散剂包括氢氧化二铵合银、氢氧化四铵合铜或亚胺金络合物。The dispersant includes diammonium silver hydroxide, tetraammonium copper hydroxide or imine gold complex.
作为进一步的改进，所述步骤S2制备溶胶层材料的方法包括：As a further improvement, the method for preparing the sol layer material in step S2 includes:
将醇盐、酸催化剂和醇按质量比1:0.1～0.5：8～25混合后搅拌1～3h，制得溶液A；Mix alkoxide, acid catalyst and alcohol in a mass ratio of 1:0.1~0.5:8~25 and stir for 1~3h to prepare solution A;
将去离子水、醇和抑制剂按照质量比1:15～30:0.03～0.06混合搅拌1～3h得到溶液B；Deionized water, alcohol and inhibitors are mixed and stirred according to the mass ratio of 1:15~30:0.03~0.06 for 1~3h to obtain solution B;
将溶液B滴加到溶液A中，同时不断搅拌，滴加完后继续搅拌2～5h，最后将所得到的溶液在室温下陈化24-48h后得到所述溶胶层材料。Add solution B dropwise to solution A while stirring continuously. After the dropwise addition, continue stirring for 2 to 5 hours. Finally, the obtained solution is aged at room temperature for 24 to 48 hours to obtain the sol layer material.
本发明的第三方面提供一种薄膜电极的应用，将所述薄膜电极作为触摸屏、太阳能电池、液晶手写板、电子窗帘、加热膜或LED显示屏的电极。A third aspect of the present invention provides an application of a thin film electrode, using the thin film electrode as an electrode for a touch screen, solar cell, liquid crystal tablet, electronic curtain, heating film or LED display screen.
相比于现有技术，本发明带来以下技术效果：Compared with the existing technology, the present invention brings the following technical effects:
本发明提供的薄膜电极制备方法，仅通过两次涂覆就能实现特定线路电极的制作，而涂覆工艺例如丝印、喷墨打印等技术上相对成熟，相比于激光蚀刻或黄光蚀刻，工艺更简便、效率更高、成本更低，且稳定性更好，有利于提高合格率；本发明提供的薄膜电极中的导电区域与非导电区域在外观上平整、无明显凸起或凹陷，将其作为电极应用用于触控屏和显示屏中，消影效果好、抗老化性能好，可明显提高触控屏和显示屏的显示效果；另外，由于省去了激光蚀刻或黄光蚀刻工序，本发明所配套的生产设备也变得相对简单，成本更低，有利于工业上的推广。The thin film electrode preparation method provided by the present invention can achieve the production of specific line electrodes through only two coatings, and the coating processes such as silk screen printing, inkjet printing, etc. are relatively mature in technology. Compared with laser etching or yellow light etching, The process is simpler, the efficiency is higher, the cost is lower, and the stability is better, which is conducive to improving the pass rate; the conductive area and the non-conductive area in the thin film electrode provided by the invention are smooth in appearance and have no obvious bulges or depressions. Using it as an electrode in touch screens and displays has good shadow elimination and anti-aging properties, which can significantly improve the display effect of touch screens and displays; in addition, since laser etching or yellow light etching is eliminated, The process and the supporting production equipment of the present invention have also become relatively simple and the cost is lower, which is conducive to industrial promotion.
附图说明Description of the drawings
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。In order to explain the technical solutions of the embodiments of the present invention more clearly, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and therefore do not It should be regarded as a limitation of the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without exerting creative efforts.
图1示出了本发明一较佳实施例的薄膜电极的结构示意图；Figure 1 shows a schematic structural diagram of a thin film electrode according to a preferred embodiment of the present invention;
图2示出了本发明另一较佳实施例的薄膜电极的结构示意图；Figure 2 shows a schematic structural diagram of a thin film electrode according to another preferred embodiment of the present invention;
图3示出了本发明薄膜电极导电区域的电镜图；Figure 3 shows an electron microscope image of the conductive area of the thin film electrode of the present invention;
图4示出了本发明薄膜电极绝缘区域的电镜图。Figure 4 shows an electron microscope image of the insulation region of the thin film electrode of the present invention.
主要元件符号说明：Description of main component symbols:
基材层-11；导电层-12；溶胶层-13；电极层-20；保护层-14。Base material layer-11; conductive layer-12; sol layer-13; electrode layer-20; protective layer-14.
具体实施方式Detailed ways
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present invention and cannot be understood as limiting the present invention.
在本发明的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientations or positional relationships indicated by "bottom", "inner", "outside", etc. are based on the orientations or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply the device referred to. Or elements must have a specific orientation, be constructed and operate in a specific orientation and therefore are not to be construed as limitations on the invention.
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise expressly stated and limited, a first feature being "on" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. touch. Furthermore, the terms "above", "above" and "above" the first feature is above the second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "below" and "beneath" the first feature to the second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature has a smaller horizontal height than the second feature.
实施例一Embodiment 1
请参阅图1，本发明揭示了一种薄膜电极，其包括基材层11及设置在基材层11表面的电极层20和保护层14。Referring to FIG. 1 , the present invention discloses a thin film electrode, which includes a base material layer 11 and an electrode layer 20 and a protective layer 14 disposed on the surface of the base material layer 11 .
所述基材层11可以是柔性基材层11，例如PET、PEN或PI；基材层11还可以是刚性基材层11，例如玻璃、PMMA或石英板；具体选用何种材质，根据薄膜电极的具体应用场景而定。The base material layer 11 can be a flexible base material layer 11, such as PET, PEN or PI; the base material layer 11 can also be a rigid base material layer 11, such as glass, PMMA or quartz plate; the specific material selected depends on the film. It depends on the specific application scenario of the electrode.
所述电极层20涂覆在基材层11的表面，该电极层20内分布有纳米金属线；电极层20宏观上分为导电区域和绝缘区域，且所述导电区域按照预设线路分布，即电极层20从外观上具有一定的图案，该图案由导电线路和非导电区域共同构成，图案的具体形状是根据某个特定电路功能要求而定。The electrode layer 20 is coated on the surface of the base material layer 11, and nanometal wires are distributed in the electrode layer 20; the electrode layer 20 is macroscopically divided into conductive areas and insulating areas, and the conductive areas are distributed according to preset lines, That is, the electrode layer 20 has a certain pattern in appearance. The pattern is composed of conductive lines and non-conductive areas. The specific shape of the pattern is determined according to the functional requirements of a specific circuit.
其中，在所述导电区域对应的电极层20内，纳米金属线之间相互连接形成一体，因而能够实现导电功能；而在所述绝缘区域对应的电极层20内，纳米金属线之间存在裂纹，裂纹深度贯穿电极层20上下表面或裂纹深度占整个电极层20厚度的大半，以使该区域不导电。Among them, in the electrode layer 20 corresponding to the conductive area, the nano-metal wires are connected to each other to form an integrated body, so that the conductive function can be realized; and in the electrode layer 20 corresponding to the insulating area, there are cracks between the nano-metal wires , the depth of the crack penetrates the upper and lower surfaces of the electrode layer 20 or the depth of the crack accounts for most of the thickness of the entire electrode layer 20, so that this area is non-conductive.
需要说明的是，上述导电和不导电是本领域一个相对的概念，一般而言，所述导电是指薄膜电极的方阻小于103欧姆，所述不导电是指薄膜电极的方阻大于106欧姆。It should be noted that the above-mentioned conductive and non-conductive are relative concepts in this field. Generally speaking, the conductive means that the sheet resistance of the thin film electrode is less than 103 ohms, and the non-conductive means that the sheet resistance of the thin film electrode is greater than 10 ohms.6 ohms.
请参阅图4，上述裂纹是微观上可观察到的结构，肉眼不可见，典型尺寸为不小于0.1μm；但该裂纹的尺寸相比于纳米金属线及纳米金属线之间间隔的距离来说又足够大，足以影响电极层20某个区域的导电性能。Please refer to Figure 4. The above-mentioned cracks are microscopically observable structures and are invisible to the naked eye. The typical size is no less than 0.1μm; however, the size of the cracks is compared to the nanometal wires and the distance between the nanometal wires. And it is large enough to affect the conductive performance of a certain area of the electrode layer 20 .
所述纳米金属线包括纳米银线、纳米铜线或纳米金线，这些纳米金属线本身尺寸、特性及其制作方法在本领域已是现有技术，不是本发明的重点，此处不再赘述。The nano-metal wires include nano-silver wires, nano-copper wires or nano-gold wires. The size, characteristics and manufacturing methods of these nano-metal wires are already existing technologies in this field and are not the focus of the present invention. They will not be described again here. .
所述保护层14可铺设在所述电极层20表面(如图1所示)，或设置在所述电极层20表层内(如图2所示)。保护层14的位置是设置在电极层20表面还是设置在电极层20表层内，是由具体的制造工艺决定的，下文将对此进行详细描述。The protective layer 14 can be laid on the surface of the electrode layer 20 (as shown in FIG. 1 ), or disposed within the surface layer of the electrode layer 20 (as shown in FIG. 2 ). Whether the protective layer 14 is positioned on the surface of the electrode layer 20 or within the surface layer of the electrode layer 20 is determined by the specific manufacturing process, which will be described in detail below.
保护层14的主要作用是对电极层20进行物理保护，防止电极层20的表面被划伤又可使电极层20的表面与外界环境处于隔离的状态中，避免电极层20的导电物质与空气接触，有效地克服电极层20发生电腐蚀及被氧化等现象引起其化学稳定性变差，最终缩短电极的使用寿命。The main function of the protective layer 14 is to physically protect the electrode layer 20, prevent the surface of the electrode layer 20 from being scratched, isolate the surface of the electrode layer 20 from the external environment, and prevent the conductive material of the electrode layer 20 from contacting the air. contact, effectively overcoming the phenomenon of electrical corrosion and oxidation of the electrode layer 20, which causes its chemical stability to deteriorate, and ultimately shortens the service life of the electrode.
保护层14的材质选用光透过率高的热固性树脂、光固化树脂中的至少一种，此种材料得到的保护层14超薄且绝缘，对电极层20的导电性、光透过率和雾度无明显影响。The material of the protective layer 14 is selected from at least one of thermosetting resin and photo-cured resin with high light transmittance. The protective layer 14 obtained from this material is ultra-thin and insulating. The conductivity, light transmittance and Haze has no obvious effect.
具体的，所述热固性树脂包括酚醛树脂、环氧树脂、不饱和聚酯、氨基树脂、硅醚树脂、呋喃树脂、聚丁二烯树脂、有机硅树脂中的一种或多种；所述光固化树脂包括环氧丙烯酸树脂、聚氨酯丙烯酸树脂、聚酯丙烯酸树脂、聚醚丙烯酸树脂、纯丙烯酸树脂、乙烯基树脂中的一种或多种。Specifically, the thermosetting resin includes one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin, and silicone resin; the light The cured resin includes one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin, and vinyl resin.
上述薄膜电极的制备方法包括以下步骤：The preparation method of the above-mentioned thin film electrode includes the following steps:
S1、制备导电层12材料：所述导电层12材料包括纳米金属线、溶剂及分散剂。S1. Preparation of conductive layer 12 materials: the conductive layer 12 materials include nanometal wires, solvents and dispersants.
在一些实施例中，所述纳米金属线包括纳米银线、纳米铜线或纳米金线；所述溶剂包括醇类、醚类、酯类、酮类、烃类中的一种或多种；所述分散剂包括氢氧化二铵合银、氢氧化四铵合铜或亚胺金络合物。In some embodiments, the nanometal wires include silver nanowires, copper nanowires or gold nanowires; the solvent includes one or more of alcohols, ethers, esters, ketones, and hydrocarbons; The dispersant includes diammonium silver hydroxide, tetraammonium copper hydroxide or imine gold complex.
需要说明的是，上述导电层12材料由本领域常规工艺制得，本发明对此不再赘述。It should be noted that the above-mentioned conductive layer 12 material is made by conventional processes in this field, and will not be described again in the present invention.
S2、制备溶胶层13材料：该溶胶层13材料包括氧化锆溶胶、二氧化钛溶胶、氧化锌溶胶、二氧化硅溶胶中的一种或多种。S2. Prepare the sol layer 13 material: the sol layer 13 material includes one or more of zirconium oxide sol, titanium dioxide sol, zinc oxide sol, and silica sol.
具体的，以二氧化碳溶胶为例，所述制备溶胶层13材料步骤如下：Specifically, taking carbon dioxide sol as an example, the steps for preparing the sol layer 13 material are as follows:
将钛金属醇盐、酸催化剂和醇按质量比1:0.1～0.5：8～25混合后搅拌1～3h，制得溶液A；Mix titanium metal alkoxide, acid catalyst and alcohol in a mass ratio of 1:0.1~0.5:8~25 and stir for 1~3h to prepare solution A;
将去离子水、醇和抑制剂按照质量比1:15～30:0.03～0.06混合搅拌1～3h得到溶液B；Deionized water, alcohol and inhibitors are mixed and stirred according to the mass ratio of 1:15~30:0.03~0.06 for 1~3h to obtain solution B;
将溶液B滴加到溶液A中，同时不断搅拌，滴加完后继续搅拌2～5h，最后将所得到的溶液在室温下陈化24-48h后得到二氧化钛溶胶。Add solution B dropwise to solution A while stirring continuously. After the dropwise addition, continue stirring for 2 to 5 hours. Finally, the resulting solution is aged at room temperature for 24 to 48 hours to obtain titanium dioxide sol.
其它溶胶层13材料的制备步骤类似，只不过需要将醇盐换成对应的金属醇盐或硅的醇盐，经过上述步骤后可得到对应的溶胶。The preparation steps of other sol layer 13 materials are similar, except that the alkoxide needs to be replaced by the corresponding metal alkoxide or silicon alkoxide. After the above steps, the corresponding sol can be obtained.
S5、制备保护层14材料。S5. Prepare the protective layer 14 material.
所述保护层14材料的制备工艺采用本领域常规操作手段即可，一般的，保护层14材料选用光透过率高的热固性树脂、光固化树脂中的至少一种制得。例如在其中一些实施例中，所述热固性树脂包括酚醛树脂、环氧树脂、不饱和聚酯、氨基树脂、硅醚树脂、呋喃树脂、聚丁二烯树脂、有机硅树脂中的一种或多种；所述光固化树脂包括环氧丙烯酸树脂、聚氨酯丙烯酸树脂、聚酯丙烯酸树脂、聚醚丙烯酸树脂、纯丙烯酸树脂、乙烯基树脂中的一种或多种。The preparation process of the protective layer 14 material can adopt conventional operating methods in this field. Generally, the protective layer 14 material is made of at least one of thermosetting resin and light-curing resin with high light transmittance. For example, in some embodiments, the thermosetting resin includes one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin, and silicone resin. species; the photocurable resin includes one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin, and vinyl resin.
需要说明的是，所述步骤S1、S2和S5三者的顺序可任意调换或同时进行。上述三种材料为制作本发明薄膜电极的准备材料，在制备上并无先后顺序之分。It should be noted that the order of steps S1, S2 and S5 can be arbitrarily exchanged or performed simultaneously. The above three materials are preparation materials for making the thin film electrode of the present invention, and there is no order of preparation.
S3、在基材层11表面涂覆所述导电层12材料，表干形成导电层12；然后按照预设图案在所述导电层12表面涂覆所述溶胶层13材料，形成溶胶层13；最后在所述溶胶层13表面涂覆所述保护层14(如图1所示)。S3. Coat the conductive layer 12 material on the surface of the base material layer 11 and dry to form the conductive layer 12; then apply the sol layer 13 material on the conductive layer 12 surface according to a preset pattern to form the sol layer 13; Finally, the protective layer 14 is coated on the surface of the sol layer 13 (as shown in Figure 1).
在其它一些实施例中，所述步骤S3的方法还可以替换为：In some other embodiments, the method of step S3 can also be replaced by:
在基材层11表面涂覆所述导电层12材料，形成导电层12；然后在所述导电层12表面涂覆所述保护层14，表干所述导电层12和保护层14；最后，按照预设图案在所述保护层14表面涂覆所述溶胶层13材料，形成溶胶层13(如图2所示)。The conductive layer 12 material is coated on the surface of the base material layer 11 to form the conductive layer 12; then the protective layer 14 is coated on the surface of the conductive layer 12, and the conductive layer 12 and the protective layer 14 are surface dried; finally, The sol layer 13 material is coated on the surface of the protective layer 14 according to a preset pattern to form the sol layer 13 (as shown in FIG. 2 ).
上述三层材料在制备过程中具有一定的流动性，还未完全固定形态，因此在涂覆之后可相互浸润和渗透。The above three layers of materials have a certain degree of fluidity during the preparation process and have not completely fixed their shape, so they can infiltrate and penetrate each other after coating.
所述涂覆的工艺包括喷涂、丝印、喷墨打印，均可。The coating process includes spraying, screen printing, and inkjet printing.
所述表干即低温干燥，温度一般不超过60℃；优选为35℃-60℃。The surface drying is low-temperature drying, and the temperature generally does not exceed 60°C; preferably 35°C-60°C.
S4、烘烤所述基材层11，使所述导电层12、所述溶胶层13和所述保护层14相互融合固化，从而得到薄膜电极。S4. Bake the base material layer 11 so that the conductive layer 12, the sol layer 13 and the protective layer 14 are fused and solidified with each other, thereby obtaining a thin film electrode.
一般的，将对导电起主要作用的导电层12和溶胶层13二者定义为电极层20。Generally, the conductive layer 12 and the sol layer 13 that play a major role in conduction are defined as the electrode layer 20 .
具体的，所述烘烤固化的温度为120℃-150℃。Specifically, the baking and curing temperature is 120°C-150°C.
由上述制备方法得到的薄膜电极放在电镜下观察，可发现涂覆有溶胶层13的薄膜区域存在裂纹，进一步地，裂纹深度贯穿电极层20上下表面或裂纹深度占整个电极层20厚度的大半；而未涂覆溶胶层13的薄膜区域则呈现致密的连续结构。经阻抗测试，涂覆溶胶层13的区域方阻超过106欧姆，这在本领域被视为不导电的，而未涂覆溶胶层13的区域方阻低于103欧姆，这在本领域被视为导电的。电极层20导电的区域定义为导电区域，电极层20不导电的区域定义为绝缘区域。The thin film electrode obtained by the above preparation method is observed under an electron microscope. It can be found that there are cracks in the film area coated with the sol layer 13. Furthermore, the crack depth penetrates the upper and lower surfaces of the electrode layer 20 or the crack depth accounts for most of the thickness of the entire electrode layer 20. ; The film area not coated with the sol layer 13 exhibits a dense continuous structure. After impedance testing, the square resistance of the area coated with the sol layer 13 exceeds 106 ohms, which is considered non-conductive in the art, while the square resistance of the area uncoated with the sol layer 13 is lower than 103 ohms, which is considered non-conductive in the art. Considered electrically conductive. The conductive region of the electrode layer 20 is defined as a conductive region, and the non-conductive region of the electrode layer 20 is defined as an insulating region.
通过有目的地在导电层12的设定位置涂覆溶胶层13，可最终得到满足一定电路功能的电路图案，即导电区域按照预设线路分布的电路图案。By purposely coating the sol layer 13 at set positions of the conductive layer 12, a circuit pattern that satisfies certain circuit functions can finally be obtained, that is, a circuit pattern in which conductive areas are distributed according to preset lines.
由上可知，所述电极层20实际上是两层材料层通过融合及相互作用而得来，具体的形成原理如下：It can be seen from the above that the electrode layer 20 is actually obtained by the fusion and interaction of two material layers. The specific formation principle is as follows:
溶胶层13的表面张力低，且具有渗透性。该溶胶层13通过选择性涂覆在导电层12的上表面或涂覆在保护层14的上表面，使未涂覆溶胶层13的区域形成电路。在涂覆溶胶层13之前，导电层12和透明保护层14都采用低温干燥的方式表干，然后涂覆溶胶层13后再经过高温烘烤固化，涂覆有溶胶层13的区域的膜经高温固化后产生裂纹(如图4所示)，使该区域不导电，其它未涂覆溶胶层13的区域的膜高温固化后形成结构致密的导电膜(如图3所示)，即电极结构中的导电线路。该过程的现象解释：涂覆溶胶层13之前的导电层12和透明保护层14都是采用低温表干的方式，形成未完全固化、结构疏松的导电膜层，然后选择性涂覆在其表面的溶胶层13由于表面张力低且具有渗透性，能渗入在导电膜层中。由于溶胶层13材料具有热力学不稳定的特性，然后在高温固化的过程中由于溶胶层13与导电层12在高温条件下会发生缩聚(失水缩聚M-OH+HO-M→M-O-M+HOH或失醇缩聚M-OR+HO-M→M-O-M+HOR)反应；在高温过程中随着溶剂(即表干过程中残余的未完全挥发的溶剂)的挥发，膜层有一个自由收缩的趋势，再冷却时就会产生双轴平面拉应力，在此过程中溶胶层13与导电层12之间形成的界面由于其热学和力学性能的失配，产生了很大的残余热应力，导致两者的界面层开始产生裂纹(如图4所示)，并扩展贯穿到导电层12，因此该区域导电层12的连续性结构被破坏，从而不导电；而未涂覆溶胶层13的区域固化形成的导电膜结构致密(如图3所示)，因此导电性不受影响。由于产生的裂纹是稳态的，且该过程不可逆，再高温加热裂纹也不能修复，由此制得的薄膜电极稳定性极高。The surface tension of the sol layer 13 is low and has permeability. The sol layer 13 is selectively coated on the upper surface of the conductive layer 12 or the upper surface of the protective layer 14 so that the area not coated with the sol layer 13 forms a circuit. Before coating the sol layer 13, both the conductive layer 12 and the transparent protective layer 14 are surface-dried by low-temperature drying. Then, after the sol layer 13 is coated, it is baked and solidified at a high temperature. The film in the area coated with the sol layer 13 is After high-temperature curing, cracks are generated (as shown in Figure 4), making this area non-conductive. After high-temperature curing, the film in other areas not coated with the sol layer 13 forms a conductive film with a dense structure (as shown in Figure 3), that is, an electrode structure. conductive lines in. Explanation of the phenomenon of this process: The conductive layer 12 and the transparent protective layer 14 before coating the sol layer 13 are surface-dried at low temperature to form an incompletely cured, loosely structured conductive film layer, and then selectively coated on its surface The sol layer 13 can penetrate into the conductive film layer due to its low surface tension and permeability. Since the material of the sol layer 13 has thermodynamically unstable characteristics, during the high-temperature curing process, the sol layer 13 and the conductive layer 12 will undergo polycondensation under high-temperature conditions (water-loss polycondensation M-OH+HO-M→M-O-M+ HOH or alcohol-lost polycondensation (M-OR+HO-M→M-O-M+HOR) reaction; during the high temperature process, with the volatilization of the solvent (that is, the remaining solvent that is not completely volatilized during the surface drying process), the film layer has a free The shrinkage tendency will produce biaxial plane tensile stress when cooling again. During this process, the interface formed between the sol layer 13 and the conductive layer 12 produces a large residual thermal stress due to the mismatch of its thermal and mechanical properties. , causing the interface layer between the two to begin to crack (as shown in Figure 4), and extend through the conductive layer 12, so the continuity structure of the conductive layer 12 in this area is destroyed, making it non-conductive; and the sol layer 13 is not coated The conductive film formed by curing the area has a dense structure (as shown in Figure 3), so the conductivity is not affected. Since the cracks generated are stable and the process is irreversible, the cracks cannot be repaired even if heated to high temperatures, so the thin film electrode produced has extremely high stability.
综上所述，本发明提供的薄膜电极制备方法，仅通过两次涂覆就能实现特定线路电极的制作，而涂覆工艺例如喷涂、丝印、喷墨打印等技术上相对成熟，相比于激光蚀刻或黄光蚀刻，工艺更简便、效率更高、成本更低，且稳定性更好，有利于提高产品合格率；本发明提供的薄膜电极中的导电区域与非导电区域在外观上平整、无明显凸起或凹陷，将其作为电极应用用于触控屏和显示屏中，消影效果好、抗老化性能好，可明显提高触控屏和显示屏的显示效果；另外，由于省去了激光蚀刻或黄光蚀刻工序，本发明所配套的生产设备也变得相对简单，成本更低，有利于工业上的推广。In summary, the thin film electrode preparation method provided by the present invention can realize the production of specific line electrodes through only two coatings, and the coating processes such as spraying, silk screen printing, inkjet printing, etc. are relatively mature in technology. Compared with Laser etching or yellow light etching has a simpler process, higher efficiency, lower cost, and better stability, which is conducive to improving the product qualification rate; the conductive area and non-conductive area in the thin film electrode provided by the invention are smooth in appearance , no obvious bulges or depressions, it can be used as an electrode in touch screens and display screens. It has good shadow elimination and anti-aging properties, which can significantly improve the display effect of touch screens and display screens. In addition, due to the saving Without the laser etching or yellow light etching process, the supporting production equipment of the present invention becomes relatively simple and the cost is lower, which is conducive to industrial promotion.
本发明还揭示了上述薄膜电极的应用，例如将所述薄膜电极作为触摸屏、太阳能电池、液晶手写板、电子窗帘、加热膜或LED显示屏的电极，消影效果好、抗老化性能好，可明显提高触控屏和显示屏的显示效果。The present invention also discloses the application of the above-mentioned thin film electrode. For example, the thin film electrode can be used as an electrode for a touch screen, a solar cell, a liquid crystal tablet, an electronic curtain, a heating film or an LED display screen. It has good shadow elimination effect and good anti-aging performance, and can Significantly improve the display effect of touch screen and display screen.
实施例二Embodiment 2
本实施例揭示了一种薄膜电极，其包括基材层11及设置在基材层11表面的电极层20和保护层14。This embodiment discloses a thin film electrode, which includes a base material layer 11 and an electrode layer 20 and a protective layer 14 disposed on the surface of the base material layer 11 .
本实施例的基材层11、保护层14的结构和制备工艺均与实施例一相同，区别之处在于：形成电极层20的导电层12材料与实施例一不同，本实施例的导电层12采用ITO(氧化铟锡，Indium tin oxide，简称ITO)，而溶胶层13的配方、制备方法仍然采用与实施例一中相同的材料，且最终制作薄膜电极的工艺方法也与实施例一一致。The structure and preparation process of the base material layer 11 and the protective layer 14 in this embodiment are the same as those in the first embodiment. The difference lies in that the material of the conductive layer 12 forming the electrode layer 20 is different from that in the first embodiment. 12 uses ITO (Indium tin oxide, referred to as ITO), and the formula and preparation method of the sol layer 13 still use the same materials as in Embodiment 1, and the final process for making the thin film electrode is also the same as that in Embodiment 1. To.
本实施例的导电层12材料ITO采用现有技术制得或直接在市面上购得，其配方和具体制备方法在本发明中不再赘述。The conductive layer 12 material ITO in this embodiment is prepared using existing technology or purchased directly on the market, and its formula and specific preparation method will not be described again in the present invention.
与实施例一功能原理相同的，在涂覆有溶胶层13的ITO导电层12区域，由于溶胶层13材料具有热力学不稳定的特性，然后在高温固化的过程中在导电层12和溶胶层13的界面层开始产生裂纹(如图4所示)，并扩展贯穿到导电层12，因此该区域导电层12的连续性结构被破坏，从而不导电；而未涂覆溶胶层13的区域固化形成的导电膜结构致密(如图3所示)，因此导电性不受影响。该裂纹是稳态的，且过程不可逆，再高温加热裂纹也不能修复，由此制得的薄膜电极稳定性极高。The functional principle is the same as that of Embodiment 1. In the area of the ITO conductive layer 12 coated with the sol layer 13, since the material of the sol layer 13 has thermodynamically unstable characteristics, during the high-temperature curing process, there is a gap between the conductive layer 12 and the sol layer 13. The interface layer begins to produce cracks (as shown in Figure 4) and extends through the conductive layer 12. Therefore, the continuity structure of the conductive layer 12 in this area is destroyed and becomes non-conductive; while the area not coated with the sol layer 13 solidifies to form The conductive film structure is dense (as shown in Figure 3), so the conductivity is not affected. The crack is stable and the process is irreversible. The crack cannot be repaired even if it is heated to high temperature. The thin film electrode thus produced has extremely high stability.
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, reference to the terms "one embodiment," "some embodiments," "an example," "specific examples," or "some examples" or the like means that specific features are described in connection with the embodiment or example. , structures, materials or features are included in at least one embodiment or example of the invention. In this specification, the schematic expressions of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine different embodiments or examples and features of different embodiments or examples described in this specification unless they are inconsistent with each other.
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described above, it can be understood that the above-mentioned embodiments are illustrative and should not be construed as limitations of the present invention. Those of ordinary skill in the art can make modifications to the above-mentioned embodiments within the scope of the present invention. The embodiments are subject to changes, modifications, substitutions and variations.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110968887.3ACN113793718B (en) | 2021-08-23 | 2021-08-23 | Thin film electrode and preparation method and application thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110968887.3ACN113793718B (en) | 2021-08-23 | 2021-08-23 | Thin film electrode and preparation method and application thereof |
| Publication Number | Publication Date |
|---|---|
| CN113793718A CN113793718A (en) | 2021-12-14 |
| CN113793718Btrue CN113793718B (en) | 2024-01-09 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110968887.3AActiveCN113793718B (en) | 2021-08-23 | 2021-08-23 | Thin film electrode and preparation method and application thereof |
| Country | Link |
|---|---|
| CN (1) | CN113793718B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113808781B (en)* | 2021-08-23 | 2023-11-21 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
| CN113764137B (en)* | 2021-08-25 | 2024-01-09 | 湖南兴威新材料有限公司 | Preparation method of nano silver wire conductive film, nano silver wire conductive film and application thereof |
| CN115411164B (en)* | 2022-08-31 | 2025-04-04 | 京东方华灿光电(浙江)有限公司 | Light-emitting diode with improved electrode conductivity and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997043689A1 (en)* | 1996-05-15 | 1997-11-20 | Seiko Epson Corporation | Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device |
| KR20080055386A (en)* | 2006-12-15 | 2008-06-19 | 엘지디스플레이 주식회사 | Thin film transistor, flat panel display panel using same and manufacturing method |
| CN101292362A (en)* | 2005-08-12 | 2008-10-22 | 凯博瑞奥斯技术公司 | Nanowire-Based Transparent Conductors |
| WO2010137838A2 (en)* | 2009-05-26 | 2010-12-02 | 연세대학교 산학협력단 | Composition for a liquid process, electronic device using same, and method for manufacturing same |
| JP2013201005A (en)* | 2012-03-23 | 2013-10-03 | Fujifilm Corp | Conductive pattern member manufacturing method, conductive pattern member, touch panel and solar cell |
| WO2014035172A1 (en)* | 2012-08-29 | 2014-03-06 | (주)탑나노시스 | Nano-wire-carbon nano-tube hybrid film and manufacturing method thereof |
| CN104246974A (en)* | 2012-02-13 | 2014-12-24 | 印可得株式会社 | Method for forming patterns using laser etching |
| CN104992752A (en)* | 2015-07-16 | 2015-10-21 | 城步新鼎盛电子科技有限公司 | Production method of silver nanowire transparent conductive film |
| KR101561582B1 (en)* | 2014-09-24 | 2015-10-22 | 에스피씨케이(주) | Multi layer power inductor and nanufacturing method thereof |
| KR20180020058A (en)* | 2016-08-17 | 2018-02-27 | 주식회사 엘지화학 | Method for manufacturing conductive product |
| CN107749318A (en)* | 2016-08-31 | 2018-03-02 | 陈初群 | A kind of preparation method of transparent conductive electrode |
| CN108597648A (en)* | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
| JP6508406B1 (en)* | 2017-11-21 | 2019-05-08 | 三菱マテリアル株式会社 | Insulated conductor and method of manufacturing insulated conductor |
| CN109805453A (en)* | 2019-03-11 | 2019-05-28 | 南京银纳新材料科技有限公司 | A kind of electronic cigarette heating component production method based on metal nanometer line |
| CN109830327A (en)* | 2019-02-22 | 2019-05-31 | 苏州绘格光电科技有限公司 | A kind of preparation method of transparent conductive electrode |
| CN110364429A (en)* | 2019-06-12 | 2019-10-22 | 北海惠科光电技术有限公司 | Metal nanowire film, preparation method thereof, and thin film transistor array |
| CN112088464A (en)* | 2019-03-18 | 2020-12-15 | Ask工业股份公司 | Method for manufacturing vehicle rear window with antenna integrated with heater |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI312580B (en)* | 2006-09-04 | 2009-07-21 | Taiwan Tft Lcd Associatio | A thin film transistor, manufacturing method of a active layer thereof and liquid crystal display |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997043689A1 (en)* | 1996-05-15 | 1997-11-20 | Seiko Epson Corporation | Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device |
| CN101292362A (en)* | 2005-08-12 | 2008-10-22 | 凯博瑞奥斯技术公司 | Nanowire-Based Transparent Conductors |
| KR20080055386A (en)* | 2006-12-15 | 2008-06-19 | 엘지디스플레이 주식회사 | Thin film transistor, flat panel display panel using same and manufacturing method |
| WO2010137838A2 (en)* | 2009-05-26 | 2010-12-02 | 연세대학교 산학협력단 | Composition for a liquid process, electronic device using same, and method for manufacturing same |
| CN104246974A (en)* | 2012-02-13 | 2014-12-24 | 印可得株式会社 | Method for forming patterns using laser etching |
| JP2013201005A (en)* | 2012-03-23 | 2013-10-03 | Fujifilm Corp | Conductive pattern member manufacturing method, conductive pattern member, touch panel and solar cell |
| WO2014035172A1 (en)* | 2012-08-29 | 2014-03-06 | (주)탑나노시스 | Nano-wire-carbon nano-tube hybrid film and manufacturing method thereof |
| KR101561582B1 (en)* | 2014-09-24 | 2015-10-22 | 에스피씨케이(주) | Multi layer power inductor and nanufacturing method thereof |
| CN104992752A (en)* | 2015-07-16 | 2015-10-21 | 城步新鼎盛电子科技有限公司 | Production method of silver nanowire transparent conductive film |
| KR20180020058A (en)* | 2016-08-17 | 2018-02-27 | 주식회사 엘지화학 | Method for manufacturing conductive product |
| CN107749318A (en)* | 2016-08-31 | 2018-03-02 | 陈初群 | A kind of preparation method of transparent conductive electrode |
| JP6508406B1 (en)* | 2017-11-21 | 2019-05-08 | 三菱マテリアル株式会社 | Insulated conductor and method of manufacturing insulated conductor |
| CN108597648A (en)* | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
| CN109830327A (en)* | 2019-02-22 | 2019-05-31 | 苏州绘格光电科技有限公司 | A kind of preparation method of transparent conductive electrode |
| CN109805453A (en)* | 2019-03-11 | 2019-05-28 | 南京银纳新材料科技有限公司 | A kind of electronic cigarette heating component production method based on metal nanometer line |
| CN112088464A (en)* | 2019-03-18 | 2020-12-15 | Ask工业股份公司 | Method for manufacturing vehicle rear window with antenna integrated with heater |
| CN110364429A (en)* | 2019-06-12 | 2019-10-22 | 北海惠科光电技术有限公司 | Metal nanowire film, preparation method thereof, and thin film transistor array |
| Title |
|---|
| Effect of different solvents on the key structural, optical and electronic properties of sol-gel dip coated AZO nanostructured thin films for optoelectronic applications;Kumar, KDA;JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS;第29卷(第 (2)期);全文* |
| Preparation and characterization of suitable insulating and transparent conducting thin films for thin film electroluminescent devices by sol-gel process.;Alam, M.J.;Dublin City University (Ireland);全文* |
| 纳米银线透明导电薄膜制备及其应用研究;朱清;中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑;全文* |
| Publication number | Publication date |
|---|---|
| CN113793718A (en) | 2021-12-14 |
| Publication | Publication Date | Title |
|---|---|---|
| CN113793718B (en) | Thin film electrode and preparation method and application thereof | |
| JP5498937B2 (en) | High contrast transparent conductor and method of forming the same | |
| CN109426386A (en) | Touch panel and manufacturing method thereof | |
| WO2017133362A1 (en) | Highly conductive transparent glass-based circuit board | |
| WO2011119707A9 (en) | Etch patterning of transparent conductors with metal nanowires | |
| CN106155416B (en) | A kind of composite membrane touch sensing and preparation method thereof | |
| CN111752061B (en) | Quasi-solid electrolyte for flexible electrochromic film and preparation method thereof | |
| CN106297967A (en) | Flexible conductive film and preparation method thereof, flexible touch screen and display floater | |
| Yang et al. | Multilayer ordered silver nanowire network films by self‐driven climbing for large‐area flexible optoelectronic devices | |
| CN111128443B (en) | A kind of transparent conductive film and preparation method thereof | |
| JP2009252437A (en) | Transparent conductive film | |
| WO2021169068A1 (en) | Touch-control panel, touch-control panel manufacturing method and touch-control panel apparatus | |
| CN105609217B (en) | A kind of graphene transparent electrode, its preparation method and display device | |
| WO2020063272A1 (en) | Ultra-thin composite transparent conductive film and preparation method therefor | |
| TW202100671A (en) | Oxidation-resistant conductive copper paste, preparation method and use thereof | |
| CN113764137A (en) | Preparation method of nano silver wire conductive film, nano silver wire conductive film and application thereof | |
| CN107025950A (en) | The preparation method of high conductivity Nano Silver copper-clad inventive thick film paste can be sintered in atmosphere | |
| Sun et al. | Low Cost and Facile Fabrication of a Micro‐Mold with High Aspect Ratio for Transparent Electrodes with Metal Mesh Using Micro‐Scale 3D Printing | |
| WO2021169067A1 (en) | Electrode, fabrication method for electrode, and apparatus thereof | |
| CN114171239B (en) | Composite conductive ink, transparent conductive film and preparation method thereof | |
| CN107210097A (en) | There is the manufacture method and the manufacture method of wire netting substrate of the multilayer board of the electroconductive polymer layer of patterning on the transparent substrate | |
| TW201810295A (en) | Transparent conductive film | |
| CN106433398A (en) | Transparent conductive gluing compound, touch panel, preparation method thereof and display device | |
| CN205334442U (en) | Flexible transparent conductive electrode structure of compound nanometer silver line | |
| TW201729220A (en) | Method of fabricating high-conductivity thick-film copper paste coated with nano-silver for being sintered in the air |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | Denomination of invention:A thin film electrode and its preparation method and application Granted publication date:20240109 Pledgee:HUNAN DEFULONG TECHNOLOGY CO.,LTD. Pledgor:HUNAN XINGWEI NEW MATERIAL Co.,Ltd. Registration number:Y2025980018962 | |
| PE01 | Entry into force of the registration of the contract for pledge of patent right |