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CN113758563B - A brightness detection method and device - Google Patents

A brightness detection method and device
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Publication number
CN113758563B
CN113758563BCN202111123354.1ACN202111123354ACN113758563BCN 113758563 BCN113758563 BCN 113758563BCN 202111123354 ACN202111123354 ACN 202111123354ACN 113758563 BCN113758563 BCN 113758563B
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detection
brightness
environment
light sensor
current
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CN113758563A (en
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窦树谦
吴昊
任健
张晓萍
范利涛
高晓娟
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Abstract

The invention discloses a brightness detection method and device, wherein the method comprises the steps of obtaining detection parameters of a TFT light sensor in a current brightness environment, determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, when the detection parameters correspond to a dark environment, the target detection mode is off detection, when the detection parameters correspond to a bright environment, the target detection mode is on detection, and adopting the target detection mode to carry out brightness detection on the current brightness environment. The method determines the target detection mode through the detection parameters, adopts different detection modes in different brightness environments, realizes brightness segmentation detection, can well inhibit current drift in dark environments and bright environments, and ensures more accurate and stable detection results.

Description

Brightness detection method and device
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a brightness detection method and device.
Background
At present, the mobile phone is always developed towards the aspect of full screen, however, devices such as a front camera and a TFT light sensor are required to be placed in front of the screen, which prevents the improvement of the screen duty ratio. TFT (Thin Film Transistor, abbreviation for thin film transistor) devices may be integrated into the display screen if they are used as TFT light sensors. The design space and the cost of the top end of the whole machine are saved, and no process technology is changed for manufacturing and integrating the display screen. The photoelectric characteristic of the TFT device, which is affected by illumination, can integrate the ambient light detection function in the display screen under the condition of not changing the manufacturing process.
However, in the practical product development, it is found that the accuracy of detecting light is unstable when the TFT device is powered on, and serious drift occurs.
Disclosure of Invention
In view of the above problems, the invention provides a brightness detection method and device, which can well inhibit current drift in dark environment and bright environment conditions, and ensure more accurate and stable detection results.
In a first aspect, the present application provides, by way of an embodiment, the following technical solutions:
a brightness detection method, the method comprising:
The method comprises the steps of obtaining detection parameters of a TFT light sensor in a current brightness environment, determining that a target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, wherein the target detection mode is the off detection when the detection parameters correspond to a dark environment, the target detection mode is the on detection when the detection parameters correspond to a bright environment, and carrying out brightness detection on the current brightness environment by adopting the target detection mode.
Optionally, the TFT light sensor includes a first sensing device and a second sensing device, and the acquiring the detection parameter of the TFT light sensor in the current brightness environment includes:
The method comprises the steps of obtaining a first photocurrent of a first sensing device in a current brightness environment and obtaining a second photocurrent of a second sensing device in the current brightness environment, wherein the first sensing device is in a non-shading state, the second sensing device is in a shading state, and the detection parameters are obtained according to the first photocurrent and the second photocurrent.
Optionally, the obtaining the detection parameter according to the first photocurrent and the second photocurrent includes:
performing compensation processing on the first photocurrent and the second photocurrent to obtain a first compensation current and a second compensation current; and obtaining the detection parameter according to the first compensation current and the second compensation current.
Optionally, the obtaining the detection parameter according to the first photocurrent and the second photocurrent includes:
and determining the difference value of the first photocurrent and the second photocurrent as the detection parameter.
Optionally, the detecting the brightness of the current brightness environment by using the target detection mode includes:
Acquiring a third photocurrent when the first sensing device is in the target detection mode; and obtaining a brightness detection result of the current brightness environment according to the third photocurrent.
Optionally, the determining, according to the detection parameter, that the target detection mode of the TFT light sensor is off detection or on detection includes:
Judging whether the detection parameter is smaller than a preset first threshold value or larger than a preset second threshold value, wherein the detection parameter is used for representing ambient brightness, determining that the target detection mode of the TFT light sensor is off detection if the detection parameter is smaller than the first threshold value, and determining that the target detection mode of the TFT light sensor is on detection if the detection parameter is larger than the second threshold value.
Optionally, the value ranges of the first threshold and the second threshold are parameter ranges corresponding to the illuminance ranges 40 lux-100 lux.
According to the second aspect, based on the same inventive concept, the present application provides, through an embodiment, the following technical solutions:
a brightness detection device, the device comprising:
The system comprises an acquisition module, a determination module and a detection module, wherein the acquisition module is used for acquiring detection parameters of a TFT light sensor in a current brightness environment, the determination module is used for determining that a target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, the target detection mode is the off detection when the detection parameters correspond to a dark environment, the target detection mode is the on detection when the detection parameters correspond to a bright environment, and the detection module is used for carrying out brightness detection on the current brightness environment by adopting the target detection mode.
In a third aspect, based on the same inventive concept, the present application provides, by an embodiment, the following technical solutions:
a brightness detection system comprises a driving chip, a detection circuit and a TFT light sensor;
The detection circuit is connected with the TFT light sensor and is used for detecting detection parameters generated by the TFT light sensor in the current brightness environment, the driving chip is respectively connected with the detection circuit and the TFT light sensor and is used for determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, the target detection mode is off detection when the detection parameters correspond to the dark environment, the target detection mode is on detection when the detection parameters correspond to the bright environment, and the brightness detection is carried out on the current brightness environment by adopting the target detection mode.
The TFT light sensor comprises a first sensing device and a second sensing device, wherein the first sensing device is in a non-shading state, and the second sensing device is in a shading state;
the first detection circuit is connected with the first sensing device and used for detecting a first photocurrent generated by the first sensing device, the second detection circuit is connected with the second sensing device and used for detecting a second photocurrent generated by the second sensing device, and the driving chip is respectively connected with the first detection circuit, the second detection circuit, the first sensing device and the second sensing device and used for obtaining the detection parameters according to the first photocurrent and the second photocurrent.
According to the fourth aspect, based on the same inventive concept, the present application provides, through an embodiment, the following technical solutions:
An electronic device comprising a processor and a memory coupled to the processor, the memory storing instructions that, when executed by the processor, cause the electronic device to perform the steps of the method of any of the first aspects.
According to a fifth aspect, based on the same inventive concept, the present application provides, by way of an embodiment, the following technical solutions:
A computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the method of any of the first aspects above.
The brightness detection method and device provided by the embodiment of the invention are characterized by acquiring the detection parameters of the TFT light sensor in the current brightness environment, then determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, then determining that the target detection mode is off detection when the detection parameters correspond to the dark environment, determining that the target detection mode is on detection when the detection parameters correspond to the bright environment, and finally adopting the target detection mode to carry out brightness detection on the current brightness environment. According to the embodiment of the invention, the target detection mode is determined through the detection parameters, different detection modes are adopted in different brightness environments, brightness segmentation detection is realized, current drift can be well restrained in dark environments and bright environments, and the detection result is ensured to be more accurate and stable.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. In the drawings:
FIG. 1 shows a schematic diagram of drift fluctuation of different ambient brightness conditions of current difference of two groups of TFT devices in the on detection state;
FIG. 2 shows a schematic diagram of drift fluctuation of different ambient brightness conditions of current differences of two groups of TFT devices in an off detection state;
FIG. 3 is a schematic flow chart of a brightness detection method according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a detection circuit for detecting photocurrent in an embodiment of the present invention;
FIG. 5 is a schematic diagram of another detection circuit for photocurrent detection in accordance with an embodiment of the present invention;
FIG. 6 is a schematic diagram showing a timing signal of a driving voltage according to an embodiment of the invention;
FIG. 7 is a schematic diagram showing a structure of a brightness detection system according to an embodiment of the invention;
FIG. 8 is a schematic diagram showing the arrangement of the first sensing device and the second sensing device according to the embodiment of the present invention;
FIG. 9 is a schematic diagram showing another structure of a brightness detection system according to an embodiment of the present invention;
FIG. 10 is a schematic diagram showing another embodiment of a brightness detection system according to the present invention;
fig. 11 is a schematic structural diagram of a brightness detection device according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
At present, in the development of practical products, the detection accuracy of the TFT device on the light is not stable when the TFT device is powered on, and serious drift can occur. Through analysis of research personnel, the TFT device can generate characteristic change during power-on operation, current drift can occur under different brightness environments, and the drift amplitude is different under the condition of illumination or not. Wherein, drift is big when the environment is darker, and drift is little when the environment is brighter. As a result, the detection accuracy in a low-light environment may be deteriorated, but the accuracy in a dark state tends to be more focused when designing and manufacturing the product.
Further, it was found that there is also a large difference in the characteristic drift of the on-current (Ion) and off-current (Ioff) of the TFT device under different illumination. According to the invention, the two groups of TFT devices with/without shielding the ambient light are designed, and the current difference (delta I10 represents the current difference in the on state, delta I0 represents the current difference in the off state) of the two groups of TFT devices is detected to judge the ambient brightness, so that the TFT devices with shielding the ambient light can exclude the ambient factors except the light. The on current has small drift fluctuation under illumination and large drift fluctuation under no illumination, as shown in fig. 1, the brightness corresponding to the curves Lsamp1, msamp1 and Dsamp1 respectively decreases in sequence, and it can be seen that the fluctuation of the curve Dsamp is the largest. The off-current has large drift fluctuation under illumination and small drift fluctuation under no illumination, and as shown in fig. 2, the brightness corresponding to the curves Lsamp2, msamp2 and Dsamp2 respectively decreases in sequence, so that the minimum fluctuation of the curve Dsamp2 can be seen. Therefore, the method of the invention utilizes the difference of drift fluctuation sensitivity of the TFT device under different brightness environment states to restrain the influence of the self current drift of the TFT light sensor on the detection accuracy when detecting the environment brightness. Thereby increasing the overall accuracy, especially the accuracy of detection in low brightness environments. The general inventive concept will be described and illustrated in detail below with reference to specific examples.
Referring to fig. 3, in an embodiment of the present invention, a brightness detection method is provided, and fig. 1 shows a flowchart of the brightness detection method, where the method includes:
and S10, acquiring detection parameters of the TFT light sensor in the current brightness environment.
In step S10, the brightness environment may be a brighter environment or a darker environment. And the TFT light sensor is used for detecting the ambient brightness. In this embodiment, the TFT light sensor may include a first sensing device and a second sensing device, the number of which is not limited, for example, 10, 100, 300, etc., and the sensing devices may be TFT devices. The first sensing device is in a non-shading state, namely sensing and detecting the ambient light, and the second sensing device is in a shading state, and the detected current data can be used for carrying out error compensation on the data detected by the first sensing device. When the TFT light sensor is integrated in a screen, the first sensing device and the second sensing device are manufactured, and the second sensing device may be shielded by disposing a BM (Black Matrix) layer, without adding an additional process flow. The detection parameter is used for representing the ambient brightness, and when the ambient brightness changes, the detection parameter also changes, and specifically, one way of obtaining the detection parameter can be as follows:
First, a first photocurrent generated by sensing ambient light by a first sensing device in a current brightness environment can be obtained, and a second photocurrent generated by sensing ambient light by a second sensing device in the current brightness environment can be obtained. Then, a detection parameter is obtained from the first photocurrent and the second photocurrent. The detection parameter may be the difference between the first and second photocurrents, for example, Δi=i1-I2, Δi is the detection parameter, I1 is the first photocurrent, I2 is the second photocurrent, or the difference between the first and second photocurrents may be added with a current compensation value, which may be used to compensate the error caused by the production process, or may be used to compensate the error applied to a specific device, for example, Δi=i1-I2+Ib,Ib is the current compensation value.
Because the first photocurrent is influenced by light and the environmental factors except the light, and the second photocurrent is influenced by the environmental factors except the light, the value containing the difference value of the first photocurrent and the second photocurrent is used as the detection parameter, the factors influencing the environment except the light can be eliminated, and the detection accuracy is improved.
In the process of obtaining the detection parameters, since the second photocurrent is a current value generated in a light shielding state, the difference between the second photocurrent and the first photocurrent is more than 3 orders of magnitude, as shown in fig. 1 and fig. 2, the current corresponding to the curve Dsamp1 is 2000nA, and the current corresponding to dsamp2 is about 3 nA. If the analog-to-digital converter (Analog to Digital Converter, ADC) is directly used to collect the second photocurrent, the situation that the second photocurrent cannot be identified may occur, so in this embodiment, after the compensation processing is performed on the first photocurrent and the second photocurrent, the analog-to-digital converter is used to collect the first compensation current corresponding to the first photocurrent and the second compensation current corresponding to the second photocurrent. Finally, according to the first compensation current and the second compensation current, the detection parameters are obtained.
In this embodiment, a voltage detection manner may be used to obtain the photocurrent, and the principle of the detection circuit is shown in fig. 4. The resistor R1 and the resistor R2 are connected in parallel, and the Drain electrode (Drain) of the sensing device is connected, so that the off current can be correspondingly detected when the resistor R1 is gated through the switch SW1, and the on current can be correspondingly detected when the resistor R2 is gated through the switch SW 2. Then, the voltage of the resistor R1 or R2 is measured by adopting an analog-digital converter to obtain corresponding compensation current, and the corresponding photocurrent can be obtained after conversion.
In addition, the photocurrent can be obtained by adopting a charge integration detection mode, and the principle of the detection circuit is shown in fig. 5. After the capacitor C1 and the capacitor C2 are respectively connected in parallel, the capacitor C1 and the capacitor C2 are connected in parallel with the input end and the output end of the amplifier AMP, the input end of the amplifier AMP is also connected with the drain electrode of the sensing device, the off current can be correspondingly detected when the capacitor C1 is gated through the switch SW3, the on current can be correspondingly detected when the capacitor C2 is gated through the switch SW4, and the switch SW5 is used for releasing the charges of the capacitor C1 and the capacitor C2 before or after detection. After the compensation current is detected, the corresponding photocurrent can be obtained after conversion.
Furthermore, in this embodiment, a detection frequency may be preset, that is, the frequency of executing steps S10-S30 is also preset, so as to ensure accuracy in the whole brightness detection process, and avoid that the target detection mode cannot be timely adjusted after the environment is replaced. For example, the detection frequency may be determined to be 5Hz, 10Hz, 20Hz, or the like in the present embodiment, as shown in fig. 6, in which a driving voltage timing signal diagram with the detection frequency of 10Hz is shown. Different detection frequencies can be set in different products or for different product requirements without limitation.
And step S20, determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, wherein the target detection mode is off detection when the detection parameters correspond to dark environments, and the target detection mode is on detection when the detection parameters correspond to bright environments.
In step S20, the detection parameters will be different in different brightness environments, so that the current ambient state of the TFT light sensor can be determined by the detection parameters, and the ambient state can be a bright environment or a dark environment. And detecting the corresponding relation between the parameters and the brightness environment, and constructing and forming a corresponding curve or parameter table by performing experimental calibration under the brightness environments with different illumination.
The target detection mode adopted in the dark environment is off detection, the off detection means that the brightness of the environment is detected through the current of the TFT light sensor in the off state, and the target detection mode adopted in the bright environment is on detection, and the on detection means that the brightness of the environment is detected through the current of the TFT light sensor in the on state. Different brightness environments correspondingly adopt different target detection modes, and current drift generated when the TFT light sensor detects the brightness of the environment can be effectively restrained.
The method in this embodiment at least includes the following two specific implementation processes to determine the target detection mode:
one is to determine the target detection mode of the TFT light sensor based on different alignment references. The following are provided:
Judging whether the detection parameter is smaller than a preset first threshold value or larger than a preset second threshold value, wherein the second threshold value is larger than the first threshold value. If the detection parameter is smaller than the first threshold value, determining that the target detection mode of the TFT light sensor is off detection. That is, when the detection parameter is smaller than the first threshold, the current brightness environment is a dark environment, and at this time, the influence of the current drift of the TFT light sensor on the detection result can be reduced by adopting the off detection. If the detection parameter is larger than the second threshold value, the target detection mode of the TFT light sensor is determined to be on detection, namely, when the detection parameter is larger than the second threshold value, the current brightness environment is indicated to be a bright environment, and at the moment, the influence of current drift of the TFT light sensor on a detection result can be reduced by adopting on detection. Therefore, the current drift of the TFT light sensor in the process of detecting the ambient brightness can be ensured to be smaller no matter in a bright environment or in a dark environment, and the brightness detection result is more accurate.
Specifically, the first threshold value and the second threshold value are different from each other, so that the target detection mode of the TFT light sensor is determined based on different comparison references, and flexible adjustment can be realized to adapt to different application scenes. For example, the value ranges of the first threshold and the second threshold may be the current ranges corresponding to the illuminance ranges 40lux to 100 lux. Determining both the first threshold and the second threshold within this range ensures a relatively accurate luminance detection result. Meanwhile, the illuminance range is an illuminance region with strong human eye sensitivity, when the illuminance range is applied to common electronic equipment such as a computer, a mobile phone and the like, the first threshold can be closer to 40lux, such as 45lux, 47lux, 50lux and the like, the second threshold can be closer to 100lux, such as 95lux, 96lux, 98lux and the like, so that the target detection mode of brightness detection within the illuminance region range (40 lux-100 lux) can be kept consistent, and brightness change caused by suddenly correcting a brightness value is avoided, thereby influencing the use feeling of a user.
The second is to determine the target detection mode of the TFT light sensor based on the same alignment reference, that is, the case where the first threshold value and the second threshold value are the same, and the third threshold value is given as an explanation in this example. The method comprises the following steps:
Judging whether the detection parameter is smaller than a preset third threshold value, wherein the value range of the third threshold value can be determined as a current range corresponding to the illuminance range 40 lux-100 lux. If the detection parameter is smaller than the third threshold value, determining that the target detection mode of the TFT light sensor is off detection, namely, if the detection parameter is smaller than the third threshold value, the current environment is a darker environment. If the detection parameter is not smaller than the third threshold value, the target detection mode of the TFT light sensor is determined to be on detection, namely, if the detection parameter is larger than the third threshold value, the current environment is a brighter environment. The same comparison standard is adopted to determine the target detection mode of the TFT light sensor, so that the same critical point of the change of the target detection mode from the bright environment to the dark environment or from the dark environment to the bright environment can be ensured, and the non-uniformity of the standard is avoided.
And S30, adopting the target detection mode to detect the brightness of the current brightness environment.
In step S30, the first sensing device for light shielding may be used as a device for brightness detection. Therefore, after the target detection mode is determined, if the target detection mode is the same as the current detection mode of the first sensing device, the driving voltage time sequence signal and the like remain unchanged, if the target detection mode is changed relative to the current detection mode of the first sensing device, for example, when the first sensing device is turned on by turning off detection change, the first sensing device can be controlled to conduct, and meanwhile, the driving voltage is adjusted, for example, the driving voltage is adjusted to be higher, and the detection frequency can remain unchanged, so that the driving voltage time sequence signal can remain unchanged. When the detection is turned off by the turn-on detection, the first sensing device can be controlled to conduct, and the driving voltage is adjusted, for example, the driving voltage is regulated down, and the detection frequency can be kept unchanged, so that the driving voltage time sequence signal can be kept unchanged. In other implementations, the corresponding detection frequencies may be designed for the on detection and the off detection, respectively, and then the driving voltage timing signal may be adjusted correspondingly after the target detection mode is changed relative to the current detection mode, where the driving voltage timing signal corresponds to the detection frequency.
Further, the brightness detection process may be that first, a third photocurrent is obtained when the first sensing device is in the target detection mode, and then, a brightness detection result of the current brightness environment is obtained according to the third photocurrent. The brightness detection result corresponding to the third photocurrent conversion is an existing manner, and is not described in detail in this embodiment. If the current brightness environment does not cause the change of the target detection mode, the third photocurrent is the first photocurrent. Finally, the third photocurrent is obtained by adopting turn-off detection in a dark environment or conducting detection in a bright environment, and segmented detection is adopted based on the brightness environment, so that the accuracy of brightness detection is ensured, and the influence of current drift of the device on a detection result is effectively restrained.
Taking an ambient brightness of 20lux as an example, an accuracy deviation of 30%. The 30% accuracy deviation is the usual production standard, at this time, the drift 6lux affects the accuracy, while the drift 15lux is allowed at 50lux, the lower the ambient brightness, the greater the drift accuracy effect. By adopting the method in the embodiment, the deviation of the detection result can be within 30% and is stable when the dark environment with low brightness and the bright environment with high brightness are ensured.
Therefore, the brightness detection method provided by the embodiment includes the steps of firstly acquiring detection parameters of a TFT light sensor in a current brightness environment, then determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, then determining that the target detection mode is off detection when the detection parameters correspond to a dark environment, determining that the target detection mode is on detection when the detection parameters correspond to a bright environment, and finally detecting the brightness of the current brightness environment by adopting the target detection mode. In the embodiment, the target detection mode is determined through the detection parameters, different detection modes are adopted in different brightness environments, brightness segmentation detection is realized, current drift can be well restrained in dark environments and bright environments, and the detection result is more accurate and stable.
Referring to fig. 7, in still another embodiment of the present invention, a brightness detection system 100 is provided, where the brightness detection system 100 includes a driving chip 110, a detection circuit 120, and a TFT light sensor 130.
The detection circuit 120 is connected to the TFT light sensor 130, and is used for detecting a detection parameter generated by the TFT light sensor 130 in the current brightness environment. The driving chip 110 is respectively connected with the detection circuit 120 and the TFT light sensor 130, and is used for determining that the target detection mode of the TFT light sensor 130 is off detection or on detection according to detection parameters, wherein the target detection mode is the off detection when the detection parameters correspond to dark environments, the target detection mode is on detection when the detection parameters correspond to bright environments, and the current brightness environment is detected by adopting the target detection mode.
Specifically, the detection circuit 120 includes a first detection circuit 121 and a second detection circuit 122, the tft light sensor 130 includes a first sensing device 131 and a second sensing device 132, the first sensing device 131 is in a non-light-shielding state, and the second sensing device 132 is in a light-shielding state. When the TFT light sensor 130 is applied to a mobile phone, the TFT light sensor 130 can be integrated in a screen, the position of the TFT light sensor can be positioned at the edge of a visual display area 402 outside an effective display area 401 of the screen, and when the first sensing device 131 and the second sensing device 132 are manufactured, a BM (Black Matrix) layer is arranged for shielding the first sensing device 131 and the second sensing device 132, and then a hole is formed in the BM layer corresponding to the position of the first sensing device 131, for example, a strip hole of 16um can be formed to enable the first sensing device 131 to be in a non-shielding state, as shown in FIG. 8.
The first detection circuit 121 is connected to the first sensing device 131 and is used for detecting a first photocurrent generated by the first sensing device 131, the second detection circuit 122 is connected to the second sensing device 132 and is used for detecting a second photocurrent generated by the second sensing device 132, and the driving chip 110 is respectively connected to the first detection circuit 121, the second detection circuit 122, the first sensing device 131 and the second sensing device 132 and is used for obtaining detection parameters according to the first photocurrent and the second photocurrent.
Note that, in this embodiment, the first detection circuit 121 and the second detection circuit 122 may each adopt a circuit structure adopted by the voltage detection method or the charge integration detection method in the foregoing embodiment, as shown in fig. 4 and 5. Meanwhile, each functional step executed by the driving chip 110 in this embodiment may be referred to as the description in the foregoing method embodiment, which is not repeated in this embodiment.
In some embodiments, driver chip 110 may be a Touch In-cell TDDI (Touch AND DISPLAY DRIVER Integration) driver chip 110. Specifically, the number of the first sensing device 131 and the second sensing device 132 is plural, and 3 is exemplarily shown in fig. 7, and should not be construed as limiting the present invention. The gates (Gate) of the first sensing device 131 and the second sensing device 132 are connected to the first output end of the driving chip 110, the sources (Source) of the first sensing device 131 and the second sensing device 132 are connected to the second output end of the driving chip 110, the drain of the first sensing device 131 is connected to the input end of the first detection circuit 121, the drain of the second sensing device 132 is connected to the input end of the second detection circuit 122, and the output end of the first detection circuit 121 and the output end of the second detection circuit 122 are respectively connected to the first input end and the second input end of the driving chip 110. In addition, the first detection circuit 121 and the second detection circuit 122 may also be integrated within the driving chip 110 to implement a current detection function, such as the brightness detection system 200 shown in fig. 9 and 10.
Referring to fig. 10, a voltage detection mode is taken as an example of the detection circuit 120. When it is determined that the off detection is performed in the dark environment, the driving chip 110 may control the switch SW1 of the first detection circuit 121 and the switch SW2 of the second detection circuit 122 to be turned off, and then place the gates of the first sensing device 131 and the second sensing device 132 at a low level to turn off the first sensing device 131 and the second sensing device 132, and simultaneously, the driving chip 110 outputs a driving signal to the source electrode, the waveform of the driving signal is as shown in fig. 6, and at this time, the brightness detection calculation may be performed by detecting the photocurrent obtained by the first detection circuit 121. When it is determined that the on detection is performed in the bright environment, the driving chip 110 may control the switch SW1 of the first detection circuit 121 and the second detection circuit 122 to be turned on and the switch SW2 to be turned off, and then output driving signals to the gate and the source of the first sensing device 131 and the second sensing device 132, and waveforms of the driving signals of the gate and the source are shown in fig. 6, and at this time, photocurrents detected by the first detection circuit 121 are all current values in the on state of the first sensing device 131 and the second sensing device 132, so that brightness detection calculation may be performed by the photocurrents detected by the first detection circuit 121.
It should be noted that, in the embodiment of the present invention, the specific implementation and the technical effects of the brightness detection system 100 are the same as those of the embodiment of the method, and for brevity, reference may be made to the corresponding content in the embodiment of the method.
Referring to fig. 11, according to the same inventive concept, a brightness detection device 300 is further provided in another embodiment of the present invention, and the brightness detection device 300 includes:
The device comprises an acquisition module 301, a determination module 302 and a detection module 303, wherein the acquisition module is used for acquiring detection parameters of a TFT light sensor in a current brightness environment, the determination module 302 is used for determining that a target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, the target detection mode is the off detection when the detection parameters correspond to a dark environment, the target detection mode is the on detection when the detection parameters correspond to a bright environment, and the detection module 303 is used for carrying out brightness detection on the current brightness environment by adopting the target detection mode.
As an alternative embodiment, the TFT light sensor includes a first sensing device and a second sensing device, and the acquiring module 301 is specifically configured to:
The method comprises the steps of obtaining a first photocurrent of a first sensing device in a current brightness environment and obtaining a second photocurrent of a second sensing device in the current brightness environment, wherein the first sensing device is in a non-shading state, the second sensing device is in a shading state, and the detection parameters are obtained according to the first photocurrent and the second photocurrent.
As an alternative embodiment, the obtaining module 301 is further specifically configured to:
performing compensation processing on the first photocurrent and the second photocurrent to obtain a first compensation current and a second compensation current; and obtaining the detection parameter according to the first compensation current and the second compensation current.
As an alternative embodiment, the obtaining module 301 is further specifically configured to:
and determining the difference value of the first photocurrent and the second photocurrent as the detection parameter.
As an alternative embodiment, the detection module 303 is specifically configured to:
Acquiring a third photocurrent when the first sensing device is in the target detection mode; and obtaining a brightness detection result of the current brightness environment according to the third photocurrent.
As an alternative embodiment, the determining module 302 is specifically configured to:
judging whether the detection parameter is smaller than a preset first threshold value or larger than a preset second threshold value, if the detection parameter is smaller than the first threshold value, determining that the target detection mode of the TFT light sensor is off detection, and if the detection parameter is larger than the second threshold value, determining that the target detection mode of the TFT light sensor is on detection.
As an optional implementation manner, the value ranges of the first threshold and the second threshold are parameter ranges corresponding to the illuminance ranges 40 lux-100 lux.
It should be noted that, in the embodiment of the present invention, the specific implementation and the technical effects of the luminance detecting apparatus 300 are the same as those of the embodiment of the foregoing method, and for the sake of brevity, reference may be made to the corresponding contents of the embodiment of the foregoing method.
Based on the same inventive concept, a further embodiment of the present invention also provides an electronic device comprising a processor and a memory coupled to the processor, the memory storing instructions which, when executed by the processor, cause the electronic device to perform the steps of the method of any of the preceding method embodiments.
It should be noted that, in the electronic device provided in the embodiment of the present invention, when the instruction is executed by the processor, the specific implementation and the technical effects of each step are the same as those of the foregoing method embodiment, and for a brief description, reference may be made to corresponding contents in the foregoing method embodiment for the sake of brevity.
Based on the same inventive concept, a further embodiment of the present invention also provides a computer-readable storage medium, on which a computer program is stored, which program, when being executed by a processor, implements the steps of the method of any of the preceding method embodiments.
It should be noted that, in the computer readable storage medium provided in the embodiments of the present invention, when the program is executed by the processor, the specific implementation and the technical effects of each step are the same as those of the foregoing method embodiments, and for brevity, reference may be made to corresponding contents in the foregoing method embodiments for the sake of brevity.
The term "and/or" appearing herein is merely one kind of association relation describing the associated object, meaning that three kinds of relations may exist, for example, a and/or B, and that three kinds of cases where a exists alone, while a and B exist together, and B exists alone. In addition, the word "comprising" does not exclude the presence of elements or steps not listed in a claim, and the word "comprising" or "includes" and "including" does not exclude the presence of other elements or steps. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (12)

The driving chip is respectively connected with the detection circuit and the TFT light sensor and is used for determining that the target detection mode of the TFT light sensor is off detection or on detection according to the detection parameters, wherein the target detection mode is the off detection when the detection parameters correspond to dark environments, the target detection mode is the on detection when the detection parameters correspond to bright environments, the off detection indicates that the brightness of the environment is detected through the current of the TFT light sensor in the off state, the on detection indicates that the brightness of the environment is detected through the current of the TFT light sensor in the on state, and the brightness of the current brightness environment is detected by adopting the target detection mode.
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