CN113690280A - Array substrate repairing method and array substrate - Google Patents

Abstract

The application provides a repairing method of an array substrate and the array substrate. The array substrate repairing method comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired; providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer; applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer; and repairing the to-be-repaired area of the anode layer by laser penetrating through the electrostatic adsorption layer. By adopting the array substrate repairing method provided by the application to repair the to-be-repaired area of the anode layer, particles generated in the repairing process are repelled by the anode layer due to the positive property, and can be adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with the negative property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the subsequently prepared display panel are prevented from being short-circuited.

Description

Array substrate repairing method and array substrate

Technical Field

The present disclosure relates to the field of display, and in particular, to a method for repairing an array substrate and an array substrate.

Background

The Active Matrix Organic Light-emitting Diode (AMOLED) display technology controls the Light emitting state of a self-emitting pixel through a Thin Film Transistor (TFT) circuit, thereby realizing the switching of different images. And one AMOLED display panel has self-emitting pixels in the order of millions or even tens of millions. In the manufacturing process of the panel, there are problems that the anode layers have protrusions or the anode layers are connected to each other in a certain number of pixels due to process level problems. These abnormal pixels need to be repaired to normal pixels by means of repair. Particles are generated in the process of repairing the anode layer of the array substrate, and the generated particles can be scattered to a normal pixel area, so that the cathode layer and the anode layer of the display panel prepared subsequently are short-circuited.

Disclosure of Invention

The application provides a repair method of an array substrate and the array substrate, which are used for avoiding particles generated in the repair process from scattering to a normal pixel area, so that an anode layer and a cathode layer of a subsequently prepared display panel are short-circuited.

A method for repairing an array substrate comprises the following steps:

providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired;

providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer;

applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer;

and repairing the to-be-repaired area of the anode layer by laser penetrating through the electrostatic adsorption layer.

In some embodiments, the array substrate further includes a pixel defining layer on the anode layer, the pixel defining layer including a pixel opening exposing the anode layer.

In some embodiments, the array substrate further comprises a connection part connected with the anode layer.

In some embodiments, the electrostatic adsorption layer includes an insulating film and a conductive film which are stacked, the insulating film being located on a side close to the anode layer, and the conductive film being located on a side close to the laser.

In some embodiments, the insulating film has a thickness of 50 nm to 100 nm, and the conductive film has a thickness of 5 nm to 50 nm.

In some embodiments, the electrostatic adsorption layer is at a distance of 1 mm to 2 mm from the anode layer.

In some embodiments, the electrostatic clamping layer has a light transmission greater than 80%.

In some embodiments, an orthographic projection of the electrostatic adhesion layer on the substrate covers an orthographic projection of a region to be repaired of the anode layer on the substrate.

In some embodiments, the voltage applied to the anode layer and the electrostatic adsorption layer is a dc voltage having a value of 5 to 50 volts.

In some embodiments, the laser has a wavelength of 950 nm to 1200 nm and the energy of the laser is 2 megajoules to 6 megajoules.

The application still provides an array substrate, array substrate is including the substrate, drive circuit layer and the anode layer that stack gradually the setting, array substrate still includes connecting portion, connecting portion with the anode layer is connected.

The application provides a repairing method of an array substrate and the array substrate. The array substrate repairing method comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired; providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer; applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer; and repairing the to-be-repaired area of the anode layer by laser penetrating through the electrostatic adsorption layer. By adopting the array substrate repairing method provided by the application to repair the to-be-repaired area of the anode layer, particles generated in the repairing process are repelled by the anode layer due to the positive property, and can be adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with the negative property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the subsequently prepared display panel are prevented from being short-circuited.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic plan view of an array substrate according to an embodiment of the present disclosure.

Fig. 2 is a cross-sectional view of an array substrate along line AA' according to an embodiment of the present disclosure.

Fig. 3 is a view illustrating a repair method of an array substrate according to the related art.

Fig. 4 is a schematic diagram illustrating a short circuit between an anode layer and a cathode layer of a display panel after the array substrate is repaired by using a conventional array substrate repairing method.

Fig. 5 is a flowchart of a repairing method of an array substrate according to an embodiment of the present application.

Fig. 6 is a scene diagram of repairing the array substrate by using the array substrate repairing method provided by the embodiment of the application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be noted that, in the embodiments of the present invention, it is to be understood that terms such as "including" or "having", etc., are intended to indicate the presence of the features, numbers, steps, actions, components, parts, or combinations thereof disclosed in the present specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, actions, components, parts, or combinations thereof are present or added. In various embodiments of the present invention, it should be understood that the sequence numbers of the following processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.

Referring to fig. 1-2, fig. 1 is a schematic plan view of an array substrate according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view of an array substrate along line AA' according to an embodiment of the present disclosure.

Thearray substrate 100 includes adisplay region 100a and aperipheral region 100 b. Thearray substrate 100 includes asubstrate 10, adriving circuit layer 20, and ananode layer 30, which are sequentially stacked.Anode layer 30 includes a region to be repaired 30 a. Thearea 30a to be repaired of theanode layer 30 may be an anode protrusion formed incompletely by etching or a short-circuit point caused by theanode layers 30 connected together between adjacent pixels. The application is not limited to the case where theregion 30a to be repaired of theanode layer 30 is taken as an anode protrusion.

Thesubstrate 10 may be a flexible substrate or a glass substrate. The material of thesubstrate 10 is not limited herein. Thedriving circuit layer 20 includes a plurality ofthin film transistors 21. Thethin film transistor 21 includes anactive layer 211, agate insulating layer 212, agate electrode 213, an interlayerdielectric layer 214, asource electrode 2151, adrain electrode 2152, and apassivation layer 216.Anode layer 30 is connected tosource 2151 ofthin film transistor 21.

Theactive layer 211 may be formed of one or more of Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Tin Oxide (IGZTO), or Indium Gallium Tin Oxide (IGTO). Thegate insulating layer 212 may be made of SiO_XOr SiO_X/SiN_XThe stack of (2) is formed. Thegate electrode 213 may be formed of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), or copper (Cu). The interlayerdielectric layer 214 may be made of silicon oxide (SiO)_X) Silicon nitride (SiN)_X) Or silicon oxide (SiO)_X) Silicon nitride (SiN)_X) The stack of (2) is formed.Source 2151 anddrain 2152 may be formed of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), or copper (Cu). Thepassivation layer 216 may be formed of SiO_XOr SiO_X/SiN_XThe stack of (2) is formed. Thepassivation layer 216 may be formed by chemical vapor deposition.Anode layer 30 may be formed of indium tin oxide/silver/indium tin oxide or silver aluminum alloy.Anode layer 30 may be formed by physical vapor deposition or magnetron sputtering.

In some embodiments, thearray substrate 100 may further include apixel defining layer 40. Thepixel defining layer 40 is positioned on theanode layer 30. Thepixel defining layer 40 includes apixel opening 41 exposing theanode electrode layer 30.

Thepixel defining layer 40 may be formed by an inkjet printing process or chemical vapor deposition. Thepixel defining layer 40 may be formed of acryl, epoxy, or polyimide organic photoresist.

In some embodiments, thearray substrate 100 may further include aconnection portion 2153. Connectingportion 2153 is connected toanode layer 30.

Theconnection portion 2153 is located in theperipheral region 100b of thearray substrate 100. Theconnection portion 2153 is provided in the same layer as thesource electrode 2151 and thedrain electrode 2152 of thethin film transistor 21, and can be used for external power supply. In this application, an external power source to theconnection 2153 may be used to charge theanode layer 30.

In some embodiments, thearray substrate 100 may further include a light-shielding layer 50. Thelight shielding layer 50 is disposed between thesubstrate 10 and the drivingcircuit layer 20. Specifically, the light-shielding layer 50 is provided corresponding to theactive layer 211 of thethin film transistor 21. An orthographic projection of the light-shielding layer 50 on thesubstrate 10 covers an orthographic projection of theactive layer 211 on thesubstrate 10.

Thelight shielding layer 50 may be formed of molybdenum (Mo) or a laminated metal of molybdenum (Mo)/copper (Cu). Thelight shielding layer 50 may be formed by physical vapor deposition.

This application can block the influence of external light tothin film transistor 21 through setting uplight shield layer 50, avoidsthin film transistor 21 threshold voltage to produce the burden and float to improvearray substrate 100's stability.

In some embodiments, thearray substrate 100 may further include abuffer layer 60. Thebuffer layer 60 covers the light-shielding layer 50.

Thebuffer layer 60 may be made of SiO_XOr SiO_X/SiN_XThe stack of (2) is formed. Thebuffer layer 60 may be formed by means of chemical vapor deposition.

Thebuffer layer 60 is arranged, so that the bending strength of thearray substrate 100 can be enhanced, and the bending stress can be buffered.

In some embodiments, thearray substrate 100 may further include aplanarization layer 70, and theplanarization layer 70 is located between the drivingcircuit layer 20 and theanode layer 30.Anode layer 30 is connected to source 2151 ofthin film transistor 21 throughplanarization layer 70.

Theplanarization layer 70 may be formed of an organic photoresist. Specifically, theplanarization layer 70 may be formed of one or more organic materials such as acrylic resin (AA), epoxy resin (EP), phenol resin (PF), polyamide resin (PA), Polyimide (PI), or the like.

According to the application, theplanarization layer 70 is arranged between the drivingcircuit layer 20 and theanode layer 30, so that the flatness of the drivingcircuit layer 20 can be improved, the subsequent preparation of a light-emitting structure layer is facilitated, and the product yield of the display panel is improved.

Referring to fig. 3-4, fig. 3 is a view illustrating a repairing method of an array substrate according to the related art. Fig. 4 is a schematic diagram illustrating a short circuit between an anode layer and a cathode layer of a display panel after the array substrate is repaired by using a conventional array substrate repairing method.

As shown in fig. 3-4, in the process of repairing the region to be repaired 30a of theanode layer 30 of thearray substrate 100 by using thelaser 301 emitted by thelaser 300, theparticles 31 are generated, and theparticles 31 are scattered to the normal pixel region of thedisplay panel 1000, so that theanode layer 30 and the cathode layer 80 of thedisplay panel 1000 are shorted, and a dark spot appears in the normal pixel region of thedisplay panel 1000.

Referring to fig. 5-6, fig. 5 is a flowchart illustrating a repairing method of an array substrate according to an embodiment of the present disclosure. Fig. 6 is a scene diagram of repairing the array substrate by using the array substrate repairing method provided by the embodiment of the application.

The application provides a method for repairing an array substrate, which comprises the following steps:

step B10: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired.

Thearray substrate 100 provided in the present application is as described above, and will not be described herein again.

Step B20: and providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer.

As shown in fig. 5, theelectrostatic adsorption layer 200 includes an insulatingfilm 201 and aconductive film 202 which are stacked.

Among them, the insulatingfilm 201 may be formed of one or more of polyethylene terephthalate (PET), cycloolefin polymer (COP), or ultra-thin glass (UTG). Theconductive film 202 may be formed of one or both of indium tin oxide and magnesium silver alloy. Theconductive film 202 can be formed by physical magnetron sputtering or evaporation.

The ultra-thin glass is a glass having a thickness of 1500 μm or less, which is generally referred to as ultra-thin glass, as compared with the thickness of ordinary glass. Wherein, the ultra-thin glass with the thickness less than 500 microns has good flexibility. Ultra-thin glass having a thickness of less than 100 microns has the property of being bendable and may also be referred to as flexible glass.

In some embodiments, the thickness of the insulatingfilm 201 is 50 to 100 nanometers. Theconductive film 202 has a thickness of 5 nm to 50 nm. Specifically, the thickness of the insulatingfilm 201 may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm. Theconductive film 202 has a thickness of 5 nm to 50 nm. Specifically, the thickness of theconductive film 202 may be 5 nm, 15 nm, 25 nm, 35 nm, 45 nm, or 50 nm.

When the thickness of the insulatingfilm 201 is too thick, theelectrostatic adsorption layer 200 cannot achieve adsorption of theparticles 31 generated in the repair process. The thicknesses of the insulatingfilm 201 and theconductive film 202 determine the light transmittance of thelaser beam 301 emitted from thelaser 300 through theelectrostatic adsorption layer 200. And the light transmittance of thelaser light 301 determines the repair effect on the region to be repaired 30a of theanode layer 30. Therefore, the thickness of the insulatingfilm 201 is controlled to be 50 nm to 100 nm. The thickness of theconductive film 202 is 5 nm to 50 nm, so as to ensure that theelectrostatic adsorption layer 200 has a good adsorption effect on theparticles 31 generated in the repair process, and also ensure that thelaser 301 can achieve the maximum transmittance.

In some embodiments, the light transmittance of theelectrostatic clamping layer 200 is greater than 80%.

This application is greater than 80% through the light transmissivity that sets upelectrostatic absorption layer 200 and can restore the regional 30a that treats ofanode layer 30 and have good restoration effect with the transmissivity of guaranteeinglaser 301.

Referring to fig. 6, theelectrostatic adsorption layer 200 is disposed between thearray substrate 100 and thelaser 300. Wherein the insulatingfilm 201 is located at one side of theanode layer 30. Theconductive film 202 is located on one side of thelaser 300.

When a negative voltage is applied to theelectrostatic adsorption layer 200, theconductive film 202 functions to accumulate charges and adsorb positively chargedparticles 31 generated in the repair process. The insulatingfilm 201 prevents the positively chargedparticles 31 from being attracted and the negatively chargedconductive film 202 from being neutralized and scattered to the normal pixel region.

This application is through setting upelectrostatic adsorption layer 200 betweenarray substrate 100 andlaser instrument 300, whenlaser 301 thatlaser instrument 300 sent sees throughelectrostatic adsorption layer 200 and restores the regional 30a that treats ofanode layer 30, can produce someparticles 31 of positive electricity nature, utilize the electrostatic adsorption principle,electrostatic adsorption layer 200 can adsorb theparticle 31 of positive electricity nature that produces in the repair process, thereby avoidparticle 31 to fall into normal pixel region, lead to display panel's anode layer and cathode layer to take place the short circuit, can both normally show in order to realize the pixel region of the display panel after restoreing.

In some embodiments, the distance D1 of theelectrostatic adsorption layer 200 from theregion 30a of theanode layer 30 to be repaired is 1 mm to 2 mm. Specifically, the distance D1 between theelectrostatic adsorption layer 200 and the area to be repaired 30a of theanode layer 30 may be 1 mm, 1.5 mm, or 2 mm.

In some embodiments, the distance D2 between theelectrostatic clamping layer 200 and thelaser 300 is 1 mm to 2 mm. Specifically, the distance D2 between theelectrostatic clamping layer 200 and thelaser 300 may be 1 mm, 1.5 mm, or 2 mm. The position of the region to be repaired 30a of theanode layer 30 is the position of the focal length of thelaser 301 or the position plus or minus 0.5 mm from the plane of the focal length of thelaser 301.

Thelaser 301 is used to remove the anode protrusion of the region to be repaired 30a of theanode layer 30 to achieve repair of the region to be repaired 30a of theanode layer 30. When the distance from thelaser 300 to the region to be repaired 30a of theanode layer 30 is too large, the repair of the region to be repaired 30a of theanode layer 30 cannot be achieved. The present application can adsorb positively chargedparticles 31 generated during a repair process by disposing theelectrostatic adsorption layer 200 between thearray substrate 100 and thelaser 300. When the distance between theelectrostatic adsorption layer 200 and theanode layer 30 is too large, theelectrostatic adsorption layer 200 cannot adsorb the positively chargedparticles 31 generated during the repair process. Therefore, the present application controls the distance D1 between theelectrostatic adsorption layer 200 and thelaser 300 to be 1 mm to 2 mm, and the distance D2 between theelectrostatic adsorption layer 200 and the region to be repaired 30a of theanode layer 30 to be 1 mm to 2 mm, so as to repair the region to be repaired 30a of theanode layer 30.

In some embodiments, an orthographic projection ofelectrostatic adsorption layer 200 onsubstrate 10 covers an orthographic projection of region to be repaired 30a ofanode layer 30 onsubstrate 10.

Theelectrostatic adsorption layer 200 is used to adsorb positively chargedparticles 31 generated during the repair process. Therefore, the orthographic projection of the region to be repaired 30a of theanode layer 30 on thesubstrate 10 is covered by the orthographic projection of theelectrostatic adsorption layer 200 on thesubstrate 10. That is, the area of theelectrostatic adsorption layer 200 is larger than the area of the region to be repaired 30a of theanode layer 30, so as to ensure that all theparticles 31 with positive electricity generated in the repairing process can be adsorbed onto theelectrostatic adsorption layer 200 when thelaser 301 repairs the region to be repaired 30a of theanode layer 30, thereby preventing theparticles 31 with positive electricity generated in the repairing process from falling into a normal pixel region, which causes a short circuit between the anode layer and the cathode layer of the display panel, and realizing that all the pixel regions of the repaired display panel can normally display.

Step B30: a positive voltage is applied to the anode layer and a negative voltage is applied to the electrostatic adsorption layer.

Connecting the positive electrode of thepower supply 400 to theconnection portion 2153 of thearray substrate 100; the negative electrode of thepower supply 400 is connected to theconductive film 202 of theelectrostatic adsorbing layer 200, and a positive voltage is applied to theanode layer 30 and a negative voltage is applied to theelectrostatic adsorbing layer 200 at the same time.

In some embodiments, thepower source 400 for applying a voltage to theanode layer 30 and theelectrostatic clamping layer 200 is a dc power source with a voltage value of 5 volts to 50 volts. Specifically, the applied voltage value is 5 volts, 15 volts, 25 volts, 35 volts, 45 volts, or 50 volts.

Theparticles 31 generated during the repair process are also made positively charged by applying a positive voltage to theanode layer 30. Applying a negative voltage to theconductive film 202 ensures that positively chargedparticles 31 generated during the repair process can be electrostatically attracted to the insulatingfilm 201 of theelectrostatic attraction layer 200.

In the present application, thepower supply 400 for applying voltage to theanode layer 30 and theelectrostatic adsorption layer 200 is a dc power supply, so as to ensure that theanode layer 30 has positive polarity and theelectrostatic adsorption layer 200 has negative polarity. And the voltage value of the voltage applied to theanode layer 30 and theelectrostatic adsorption layer 200 is controlled to be 5 v to 50 v, so as to ensure that the adsorption force between theelectrostatic adsorption layer 200 and the positively chargedparticles 31 is not easy to make the positively chargedparticles 31 fall off from theelectrostatic adsorption layer 200 to a normal pixel region.

Step B40: and repairing the to-be-repaired area of the anode layer by laser penetrating through the electrostatic adsorption layer.

Thelaser 301 emitted by thelaser 300 is used to repair the region to be repaired 30a of theanode layer 30 through theelectrostatic adsorption layer 200. The position of the region to be repaired 30a of theanode layer 30 is the position of the focal length of thelaser 301 or the position plus or minus 0.5 mm from the plane of the focal length of thelaser 301. Since the plane of theelectrostatic adsorption layer 200 does not belong to the position of the focal length of thelaser 301, when thelaser 301 passes through theelectrostatic adsorption layer 200 to repair theregion 30a to be repaired of theanode layer 30, theelectrostatic adsorption layer 200 is not damaged.

In some embodiments, the wavelength oflaser light 301 is 950 nanometers to 1200 nanometers. Thelaser 301 energy is 2 megajoules to 6 megajoules. Specifically, the wavelength of the laser may be 950 nm, 1000 nm, 1064 nm, 1100 nm, 1150 nm, or 1200 nm. The energy of the laser may be 2 megajoules, 3 megajoules, 4 megajoules, 5 megajoules, or 6 megajoules.

When the energy of thelaser light 301 is too large, normal pixels around the region to be repaired 30a of theanode layer 30 are damaged. When the energy of thelaser 301 is too small, the anode protrusion in the region to be repaired 30a of theanode layer 30 cannot be removed, and the repair of the region to be repaired 30a of theanode layer 30 cannot be completed. Therefore, thelaser 301 with the wavelength of 950 to 1200 nm and the energy of 2 to 6 megajoules is adopted to repair the region to be repaired 30a of theanode layer 30 through theelectrostatic adsorption layer 200, so that the success rate of repair can be improved, and the yield of the display panel is improved.

In some embodiments, before repairing the region to be repaired 30a of the anode layer through the electrostatic adsorption layer by using laser, the method may further include:

step B50: and positioning the area to be repaired of the anode layer.

Theregion 30a to be repaired of theanode layer 30 can be located by taking a picture of a Charge Coupled Device (CCD) or detecting an electrical signal. Specifically, whether eachanode layer 30 is abnormal or not may be determined through an Array Test (Array Test), so as to locate the region to be repaired 30a of theanode layer 30.

Before thelaser 301 is used to repair theregion 30a to be repaired of theanode layer 30 through theelectrostatic adsorption layer 200, theregion 30a to be repaired of theanode layer 30 is positioned, so that the repair of theregion 30a to be repaired of theanode layer 30 can be accurately and rapidly completed in the following.

The application provides a method for repairing an array substrate, which comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired. Providing an electrostatic adsorption layer on one side of the anode layer. A positive voltage is applied to the anode layer, and a negative voltage is applied to the electrostatic adsorption layer. And repairing the region to be repaired of the anode layer through the electrostatic adsorption layer by adopting laser. By adopting the array substrate repairing method provided by the application to repair the to-be-repaired area of the anode layer, particles generated in the repairing process are repelled by the anode layer due to the positive property, and can be adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with the negative property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the display panel are prevented from being short-circuited.

In summary, although the embodiments of the present application are described in detail above, the above-mentioned embodiments are not intended to limit the present application, and it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present application.

Claims (11)

1. A method for repairing an array substrate is characterized by comprising the following steps:

providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired;

providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer;

applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer;

and repairing the to-be-repaired area of the anode layer by laser penetrating through the electrostatic adsorption layer.

2. The array substrate repairing method according to claim 1, wherein the array substrate further comprises a pixel defining layer on the anode layer, the pixel defining layer including a pixel opening exposing the anode layer.

3. The array substrate repairing method according to claim 1, wherein the array substrate further comprises a connection portion, and the connection portion is connected to the anode layer.

4. The array substrate repairing method according to claim 1, wherein the electrostatic adsorption layer includes an insulating film and a conductive film which are stacked, the insulating film is located on a side close to the anode layer, and the conductive film is located on a side close to the laser.

5. The method for repairing an array substrate of claim 4, wherein the insulating film has a thickness of 50 nm to 100 nm, and the conductive film has a thickness of 5 nm to 50 nm.

6. The array substrate repairing method according to claim 1, wherein the distance between the electrostatic adsorption layer and the anode layer is 1 mm to 2 mm.

7. The method for repairing an array substrate of claim 1, wherein the light transmittance of the electrostatic absorption layer is greater than 80%.

8. The array substrate repairing method according to claim 1, wherein an orthographic projection of the electrostatic adsorption layer on the substrate covers an orthographic projection of a region to be repaired of the anode layer on the substrate.

9. The method for repairing an array substrate of claim 1, wherein a voltage applied to the anode layer and the electrostatic adsorption layer is a dc power supply, and the applied voltage has a value of 5 v to 50 v.

10. The method for repairing an array substrate of claim 1, wherein the laser has a wavelength of 950 nm to 1200 nm and an energy of 2 mJ to 6 mJ.

11. The array substrate is characterized by comprising a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the array substrate further comprises a connecting part which is connected with the anode layer.

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