技术领域Technical Field
本公开涉及半导体装置的制造方法、基板处理装置和记录介质。The present disclosure relates to a method for manufacturing a semiconductor device, a substrate processing device, and a recording medium.
背景技术Background Art
近年来，伴随着半导体设备的细微化、高密度化，正变得逐步使用金属氧化膜(高介电常数(High-k)绝缘膜)来作为栅极绝缘膜。此外，为了增大DRAM电容的容量，也在进行金属氧化膜在电容绝缘膜中的应用。要求这些金属氧化膜在低温成膜，进而要求表面平坦性、凹部嵌入性、台阶覆盖性优异且异物少的成膜方法。作为形成金属氧化膜的方法之一，有通过使供给至处理室内的处理气体流分散，在基板上形成氧化锆膜等薄膜的方法(例如，专利文献1)。In recent years, along with the miniaturization and high density of semiconductor devices, metal oxide films (high dielectric constant (High-k) insulating films) are gradually being used as gate insulating films. In addition, in order to increase the capacity of DRAM capacitors, the application of metal oxide films in capacitor insulating films is also being carried out. These metal oxide films are required to be formed at low temperatures, and further require a film forming method with excellent surface flatness, recess embedding, step coverage and few foreign matter. As one of the methods for forming a metal oxide film, there is a method for forming a thin film such as a zirconium oxide film on a substrate by dispersing the processing gas flow supplied to the processing chamber (for example, patent document 1).
现有技术文献Prior art literature
专利文献Patent Literature
专利文献1：日本特开2014-67783号公报Patent Document 1: Japanese Patent Application Publication No. 2014-67783
发明内容Summary of the invention
发明要解决的课题Problems to be solved by the invention
但是，如果使处理气体流分散，则有时对于基板中心不能供给充分量的处理气体，存在膜厚均匀性变差的情形。本公开的目的在于提供一种能够提高在基板上形成的金属氧化膜的膜厚均匀性的技术。However, if the process gas flow is dispersed, a sufficient amount of process gas may not be supplied to the center of the substrate, and the film thickness uniformity may deteriorate. The present disclosure aims to provide a technology capable of improving the film thickness uniformity of a metal oxide film formed on a substrate.
解决课题的方法Solution to the problem
根据本公开的一个方面，提供一种技术，具有：According to one aspect of the present disclosure, a technology is provided, having:
(a)对于处理室内的基板供给含金属气体的工序，和(a) supplying a metal-containing gas to a substrate in a processing chamber, and
(b)对于上述处理室内的上述基板，将含氧气体的流速设为7.0m/s以上8.5m/s以下、上述含氧气体的分压设为9.0Pa以上12.0Pa以下来供给上述含氧气体的工序。(b) supplying the oxygen-containing gas to the substrate in the processing chamber at a flow rate of 7.0 m/s to 8.5 m/s and at a partial pressure of 9.0 Pa to 12.0 Pa.
发明效果Effects of the Invention
根据本公开，能够提供能够提高在基板上形成的金属氧化膜的膜厚均匀性的技术。According to the present disclosure, it is possible to provide a technology capable of improving the uniformity of the film thickness of a metal oxide film formed on a substrate.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本公开的实施方式中适合使用的基板处理装置的处理炉的概略构成图，是以纵截面图来显示处理炉部分的图。1 is a schematic diagram showing the structure of a processing furnace of a substrate processing apparatus preferably used in an embodiment of the present disclosure, and is a diagram showing a processing furnace portion in a longitudinal cross-sectional view.
图2是沿着图1的A-A线的概略横截面图。Fig. 2 is a schematic cross-sectional view taken along line A-A of Fig. 1 .
图3是显示图1所示的基板处理装置所具有的控制器的构成的框图。FIG. 3 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG. 1 .
图4是显示本公开的实施方式中的成膜流程的图。FIG. 4 is a diagram showing a film forming process in an embodiment of the present disclosure.
图5是显示过去与本公开的实施方式中的晶圆面内和平均膜厚的关系的图。FIG. 5 is a diagram showing the relationship between the wafer in-plane thickness and the average film thickness in the conventional art and in the embodiment of the present disclosure.
具体实施方式DETAILED DESCRIPTION
＜本公开的一个实施方式＞<One embodiment of the present disclosure>
以下，参照图1～5对本公开的一个实施方式进行说明。基板处理装置10是作为半导体装置的制造工序中所使用的装置的一例而构成的。Hereinafter, one embodiment of the present disclosure will be described with reference to Fig. 1 to Fig. 5. The substrate processing apparatus 10 is configured as an example of an apparatus used in a manufacturing process of a semiconductor device.
(1)基板处理装置的构成(1) Configuration of substrate processing apparatus
基板处理装置10具有设置了作为加热单元(加热机构、加热系统)的加热器207的处理炉202。加热器207为圆筒形状，受到作为保持板的加热器基座(未图示)的支撑而被垂直安装。The substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating unit (heating mechanism, heating system). The heater 207 has a cylindrical shape and is supported by a heater base (not shown) as a holding plate and is installed vertically.
在加热器207的内侧，与加热器207同心圆状地配设构成反应容器(处理容器)的外管203。外管203例如由石英(SiO2)、碳化硅(SiC)等耐热性材料构成，形成为上端闭塞下端开口的圆筒形状。在外管203的下方，与外管203同心圆状地配设集管(入口法兰)209。集管209例如由不锈钢(SUS)等金属构成，形成为上端和下端开口的圆筒形状。在集管209的上端部与外管203之间，设置作为密封构件的O型圈(未图示)。集管209受到加热器基座的支撑，使得外管203成为被垂直安装的状态。On the inner side of the heater 207, an outer tube 203 constituting a reaction container (processing container) is disposed concentrically with the heater 207. The outer tube 203 is made of a heat-resistant material such as quartz (SiO2 ) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the outer tube 203, a header (inlet flange) 209 is disposed concentrically with the outer tube 203. The header 209 is made of a metal such as stainless steel (SUS), and is formed into a cylindrical shape with an open upper end and a lower end. An O-ring (not shown) is provided as a sealing member between the upper end of the header 209 and the outer tube 203. The header 209 is supported by the heater base so that the outer tube 203 is installed vertically.
在外管203的内侧，配设构成反应容器的内管204。内管204例如由石英、SiC等耐热性材料构成，形成为上端闭塞下端开口的圆筒形状。处理容器(反应容器)主要由外管203、内管204和集管209构成。在处理容器的筒中空部(内管204的内侧)形成处理室201。An inner tube 204 constituting a reaction vessel is disposed inside the outer tube 203. The inner tube 204 is made of a heat-resistant material such as quartz or SiC, and is formed into a cylindrical shape with a closed upper end and an open lower end. The processing vessel (reaction vessel) is mainly composed of the outer tube 203, the inner tube 204, and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing vessel (inside the inner tube 204).
处理室201构成为能够将作为基板的晶圆200以由后述的晶圆盒217以水平姿态在竖直方向上多段地排列的状态来容纳。The processing chamber 201 is configured to accommodate wafers 200 as substrates in a state where wafers 200 are arranged in a horizontal posture in a plurality of stages in the vertical direction by wafer cassettes 217 to be described later.
在处理室201内，设置有喷嘴410,420,430,440来贯通集管209的侧壁和内管204。喷嘴410,420,430,440分别与气体供给管310,320,330,340连接。这里，本实施方式的处理炉202不限于上述方式。喷嘴等的数量可根据需要而适宜变更。In the processing chamber 201, nozzles 410, 420, 430, 440 are provided to penetrate the side wall of the manifold 209 and the inner tube 204. The nozzles 410, 420, 430, 440 are connected to the gas supply pipes 310, 320, 330, 340, respectively. Here, the processing furnace 202 of this embodiment is not limited to the above-mentioned form. The number of nozzles and the like can be appropriately changed as needed.
在气体供给管310,320,330,340中，从上游侧开始依次分别设置有作为流量控制器(流量控制部)的质量流量控制器(MFC)312,322,332,342、作为开关阀的阀门314,324,334,344。在气体供给管310,320,330,340的阀门314,324,334,344的下游侧，分别连接供给非活性气体的气体供给管510,520,530,540。在气体供给管510,520,530,540中，从上游侧开始依次分别设置有作为流量控制器(流量控制部)的MFC512,522,532,542和作为开关阀的阀门514,524,534,544。In the gas supply pipes 310, 320, 330, 340, mass flow controllers (MFCs) 312, 322, 332, 342 as flow controllers (flow control units) and valves 314, 324, 334, 344 as switch valves are provided in order from the upstream side. Downstream of the valves 314, 324, 334, 344 of the gas supply pipes 310, 320, 330, 340, gas supply pipes 510, 520, 530, 540 for supplying inert gas are connected, respectively. In the gas supply pipes 510, 520, 530, 540, MFCs 512, 522, 532, 542 as flow controllers (flow control units) and valves 514, 524, 534, 544 as switch valves are provided in order from the upstream side.
喷嘴410,420,430,440构成为L字型的喷嘴，其水平部设置为贯通集管209的侧壁和内管204。喷嘴410,420,430,440的垂直部设置在以在内管204的径向上向外突出且在竖直方向延伸的方式形成的沟槽形状(沟形状)的预备室201a的内部，在预备室201a内沿着内管204的内壁向着上方(晶圆200的排列方向的上方)设置。The nozzles 410, 420, 430, 440 are configured as L-shaped nozzles, and the horizontal portions thereof are provided to penetrate the side wall of the manifold 209 and the inner tube 204. The vertical portions of the nozzles 410, 420, 430, 440 are provided inside the preparatory chamber 201a having a groove shape (groove shape) formed in a manner protruding outward in the radial direction of the inner tube 204 and extending in the vertical direction, and are provided upward (above the arrangement direction of the wafers 200) along the inner wall of the inner tube 204 in the preparatory chamber 201a.
喷嘴410,420,430,440设置为从处理室201的下部区域延伸至处理室201的上部区域，在与晶圆200相对的位置分别设置有多个气体供给孔410a,420a,430a,440a。由此，从喷嘴410,420,430,440的气体供给孔410a,420a,430a,440a分别向晶圆200供给处理气体。从内管204的下部直至上部，设置有多个该气体供给孔410a,420a,430a,440a，各自具有相同的开口面积，进而以相同的开口间距设置。但气体供给孔410a,420a,430a,440a不限于上述方式。例如，也可以从内管204的下部向着上部，开口面积渐渐增大。由此，能够使从气体供给孔410a,420a,430a,440a供给的气体的流量更加均匀化。The nozzles 410, 420, 430, 440 are arranged to extend from the lower area of the processing chamber 201 to the upper area of the processing chamber 201, and a plurality of gas supply holes 410a, 420a, 430a, 440a are respectively arranged at positions opposite to the wafer 200. Thus, the processing gas is respectively supplied to the wafer 200 from the gas supply holes 410a, 420a, 430a, 440a of the nozzles 410, 420, 430, 440. From the lower part to the upper part of the inner tube 204, a plurality of the gas supply holes 410a, 420a, 430a, 440a are arranged, each having the same opening area, and further arranged at the same opening spacing. However, the gas supply holes 410a, 420a, 430a, 440a are not limited to the above-mentioned method. For example, the opening area may gradually increase from the lower part to the upper part of the inner tube 204. This makes it possible to make the flow rate of the gas supplied from the gas supply holes 410 a , 420 a , 430 a , and 440 a more uniform.
喷嘴410,420,430,440的气体供给孔410a,420a,430a,440a，在从后述的晶圆盒217的下部至上部的高度位置设置多个。因此，从喷嘴410,420,430的气体供给孔410a,420a,430a,440a供给至处理室201内的处理气体能够供给至从晶圆盒217的下部至上部所容纳的晶圆200，即，晶圆盒217内容纳的晶圆200的全部区域。喷嘴410,420,430,440可以设置为从处理室201的下部区域延伸至上部区域，但优选设置为延伸至晶圆盒217的顶部附近。The gas supply holes 410a, 420a, 430a, 440a of the nozzles 410, 420, 430, 440 are provided in a plurality of height positions from the lower part to the upper part of the wafer box 217 described later. Therefore, the process gas supplied from the gas supply holes 410a, 420a, 430a, 440a of the nozzles 410, 420, 430 to the process chamber 201 can be supplied to the wafers 200 accommodated from the lower part to the upper part of the wafer box 217, that is, the entire area of the wafers 200 accommodated in the wafer box 217. The nozzles 410, 420, 430, 440 may be provided to extend from the lower area to the upper area of the process chamber 201, but are preferably provided to extend to the vicinity of the top of the wafer box 217.
从气体供给管310将作为处理气体的含金属气体(含有金属的原料气体)经由MFC312、阀门314、喷嘴410供给至处理室201内。作为含金属气体，是有机系原料，能够使用例如含有锆(Zr)的四乙基甲基氨基锆(TEMAZ、Zr[N(CH3)C2H5]4)。TEMAZ在常温常压下是液体，由未图示的气化器进行气化，作为气化气体即TEMAZ气体来使用。A metal-containing gas (metal-containing raw material gas) as a processing gas is supplied from a gas supply pipe 310 into the processing chamber 201 via an MFC 312, a valve 314, and a nozzle 410. As the metal-containing gas, an organic raw material such as tetraethylmethylaminozirconium (TEMAZ, Zr[N(CH3 )C2 H5 ]4 ) containing zirconium (Zr) can be used. TEMAZ is a liquid at room temperature and pressure, and is vaporized by a vaporizer (not shown) and used as a vaporized gas, i.e., TEMAZ gas.
从气体供给管320～340将作为氧化气体的含氧气体(含氧气体、含O气体)经由MFC322,332,342、阀门324,334,344、喷嘴420,430,440从气体供给孔410a,420a,430a,440a供给至处理室201内。作为含氧气体，例如，使用臭氧(O3)等。Oxygen-containing gas (oxygen-containing gas, O-containing gas) as an oxidizing gas is supplied from gas supply pipes 320 to 340 through MFCs 322, 332, 342, valves 324, 334, 344, nozzles 420, 430, 440 and gas supply holes 410a, 420a, 430a, 440a into processing chamber 201. As the oxygen-containing gas, for example, ozone (O3 ) is used.
处理气体供给系统主要由气体供给管310,320,330,340、MFC312,322,332,342、阀门314,324,334,344、喷嘴410,420,430,440构成，但也可以仅将喷嘴410,420,430,440视为处理气体供给系统。处理气体供给系统也可以简称为气体供给系统。在从气体供给管310流入含金属气体时，含金属气体供给系统主要由气体供给管310、MFC312、阀门314构成，但也可以考虑将喷嘴410纳入含金属气体供给系统。在从气体供给管320,330,340流入含氧气体时，含氧气体供给系统主要由气体供给管320、MFC322、阀门324、气体供给管330、MFC332、阀门334、气体供给管340、MFC342、阀门344构成，但也可以考虑将喷嘴420,430,440纳入含氧气体供给系统。含氧气体供给系统也可称为O3气体供给系统。另外，非活性气体供给系统主要由气体供给管510,520,530,540、MFC512,522,532,542、阀门514,524,534,544构成。也可将非活性气体供给系统称为吹扫气体供给系统、稀释气体供给系统或者载流气体供给系统。The processing gas supply system is mainly composed of gas supply pipes 310, 320, 330, 340, MFC312, 322, 332, 342, valves 314, 324, 334, 344, and nozzles 410, 420, 430, 440, but only nozzles 410, 420, 430, 440 can be regarded as the processing gas supply system. The processing gas supply system can also be referred to as the gas supply system. When the metal-containing gas flows into the gas supply pipe 310, the metal-containing gas supply system is mainly composed of the gas supply pipe 310, MFC312, and valve 314, but it is also possible to consider incorporating the nozzle 410 into the metal-containing gas supply system. When oxygen-containing gas flows into the gas supply pipe 320, 330, 340, the oxygen-containing gas supply system is mainly composed of the gas supply pipe 320, MFC322, valve 324, gas supply pipe 330, MFC332, valve 334, gas supply pipe 340, MFC342, valve 344, but it is also possible to consider incorporating the nozzles 420, 430, 440 into the oxygen-containing gas supply system. The oxygen-containing gas supply system can also be called anO3 gas supply system. In addition, the inactive gas supply system is mainly composed of gas supply pipes 510, 520, 530, 540, MFC512, 522, 532, 542, valves 514, 524, 534, 544. The inactive gas supply system can also be called a purge gas supply system, a dilution gas supply system, or a carrier gas supply system.
本实施方式中的气体供给方法中，经由喷嘴410,420,430,440来运送气体，所述喷嘴410,420,430,440配置在由内管204的内壁和多张晶圆200的端部定义的圆环状纵长空间内，即，圆筒状的空间内的预备室201a内。并且，从设置在喷嘴410,420,430,440的与晶圆相对的位置的多个气体供给孔410a,420a,430a,440a向内管204内喷出气体。In the gas supply method of this embodiment, the gas is transported through the nozzles 410, 420, 430, 440, which are arranged in the annular longitudinal space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200, that is, in the preparatory chamber 201a in the cylindrical space. In addition, the gas is ejected into the inner tube 204 from the plurality of gas supply holes 410a, 420a, 430a, 440a provided at the positions of the nozzles 410, 420, 430, 440 facing the wafers.
排气孔(排气口)204a是在内管204的侧壁上与喷嘴410,420,430,440相对的位置，即，与预备室201a成180度相反侧的位置形成的贯通孔，例如，是竖直方向上细长地开设的狭缝状贯通孔。因此，从喷嘴410,420,430,440的气体供给孔410a,420a,430a,440a供给至处理室201内并在晶圆200的表面上流过后的气体，即，残留气体(残气)，经由排气孔204a流入由在内管204和外管203之间形成的间隙构成的排气路206内。然后，流入排气路206内的气体流入排气管231内，排出到处理炉202外。The exhaust hole (exhaust port) 204a is a through hole formed on the side wall of the inner tube 204 at a position opposite to the nozzles 410, 420, 430, 440, that is, at a position 180 degrees opposite to the preparatory chamber 201a, for example, a slit-shaped through hole opened in a vertical direction. Therefore, the gas supplied from the gas supply holes 410a, 420a, 430a, 440 of the nozzles 410, 420, 430, 440 into the processing chamber 201 and flowing on the surface of the wafer 200, that is, the residual gas (residual gas), flows into the exhaust path 206 formed by the gap formed between the inner tube 204 and the outer tube 203 through the exhaust hole 204a. Then, the gas flowing into the exhaust path 206 flows into the exhaust pipe 231 and is discharged to the outside of the processing furnace 202.
排气孔204a设置在与多个晶圆200相对的位置(优选从晶圆盒217的上部直至下部的相对的位置)，从气体供给孔410a,420a,430a,440a供给至处理室201内的晶圆200附近的气体向着水平方向(即，与晶圆200的表面平行的方向)流动后，经由排气孔204a流入排气路206内。即，在处理室201内残留的气体经由排气孔204a相对于晶圆200的主面平行地排气。需说明的是，排气孔204a不限于构成为狭缝状的贯通孔的情形，也可以由多个孔构成。The exhaust hole 204a is provided at a position relative to the plurality of wafers 200 (preferably, a position relative to the bottom from the upper part of the wafer box 217), and the gas supplied from the gas supply holes 410a, 420a, 430a, and 440a to the vicinity of the wafers 200 in the processing chamber 201 flows in a horizontal direction (i.e., a direction parallel to the surface of the wafer 200), and then flows into the exhaust path 206 through the exhaust hole 204a. That is, the gas remaining in the processing chamber 201 is exhausted in parallel with the main surface of the wafer 200 through the exhaust hole 204a. It should be noted that the exhaust hole 204a is not limited to the case of being a slit-shaped through hole, and may also be composed of a plurality of holes.
集管209中，设置有对处理室201内的气氛进行排气的排气管231。排气管231中，从上游侧开始依次与作为检测处理室201内压力的压力检测器(压力检测部)的压力传感器245、APC(Auto Pressure Controller，压力自动调节器)阀门231a、作为真空排气装置的真空泵246连接。APC阀门231a在使真空泵246工作的状态下通过对阀进行开关，能够对处理室201内进行真空排气和停止真空排气，进而，在使真空泵246工作的状态下，通过调节阀开度，能够调整处理室201内的压力。主要地，由排气孔204a、排气路206、排气管231、APC阀门231a和压力传感器245构成排气系统，即排气管路。需说明的是，也可考虑将真空泵246纳入排气系统。In the manifold 209, an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided. In the exhaust pipe 231, starting from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, an APC (Auto Pressure Controller) valve 231a, and a vacuum pump 246 as a vacuum exhaust device are connected in sequence. The APC valve 231a can perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve when the vacuum pump 246 is in operation, and further, the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening when the vacuum pump 246 is in operation. Mainly, the exhaust system, that is, the exhaust pipeline, is composed of the exhaust hole 204a, the exhaust path 206, the exhaust pipe 231, the APC valve 231a and the pressure sensor 245. It should be noted that it is also conceivable to incorporate the vacuum pump 246 into the exhaust system.
在集管209的下方，设置有作为能够将集管209的下端开口气密地闭塞的炉口盖体的密封帽219。密封帽219构成为从竖直方向下侧与集管209的下端抵接。密封帽219例如由SUS等金属材料构成，形成为圆盘状。在密封帽219的上表面，设置有与集管209的下端抵接的作为密封构件的O型圈(未图示)。在密封帽219的与处理室201的相反侧，设置有使容纳晶圆200的晶圆盒217旋转的旋转机构267。旋转机构267的旋转轴255贯通密封帽219而与晶圆盒217连接。旋转机构267构成为通过使晶圆盒217旋转而使晶圆200旋转。密封帽219构成为通过在外管203的外部设置的作为升降机构的晶圆盒升降机115而在竖直方向升降。晶圆盒升降机115构成为通过使密封帽219升降而将晶圆盒217运入处理室201内和运出处理室201外。晶圆盒升降机115构成为将晶圆盒217和容纳在晶圆盒217内的晶圆200运入处理室201内和运出处理室201外的运送装置(运送机构)。Below the manifold 209, a sealing cap 219 is provided as a furnace port cover body capable of hermetically closing the lower end opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The sealing cap 219 is made of a metal material such as SUS, for example, and is formed in a disc shape. On the upper surface of the sealing cap 219, an O-ring (not shown) as a sealing member abutting against the lower end of the manifold 209 is provided. On the opposite side of the sealing cap 219 from the processing chamber 201, a rotating mechanism 267 for rotating the wafer box 217 containing the wafer 200 is provided. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cap 219 and is connected to the wafer box 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer box 217. The sealing cap 219 is configured to be raised and lowered in the vertical direction by a wafer box elevator 115 as a lifting mechanism provided outside the outer tube 203. The wafer box elevator 115 is configured to carry the wafer box 217 into and out of the processing chamber 201 by raising and lowering the sealing cap 219. The wafer box elevator 115 is configured as a conveying device (conveying mechanism) that carries the wafer box 217 and the wafers 200 accommodated in the wafer box 217 into and out of the processing chamber 201.
作为基板支撑件的晶圆盒217构成为能够将多张(例如25～200张)晶圆200以水平姿态且相互中心对齐的状态在竖直方向上整列地多段支撑，即，隔着间隔而排列。晶圆盒217例如由石英、SiC等耐热材料构成。在晶圆盒217的下部，例如由石英、SiC等耐热材料构成的隔热板218多段地(未图示)被支撑。通过这样的构成，使得来自加热器207的热难以传输到密封帽219侧。但是，本实施方式不限于上述方式。例如，也可以在晶圆盒217的下部不设置隔热板218，而设置构成为由石英、SiC等耐热性材料构成的作为筒状部件来构成的隔热筒。The wafer box 217 as a substrate support is configured to support multiple (for example, 25 to 200) wafers 200 in a horizontal posture and in a state where the centers are aligned with each other in a vertical direction in multiple stages, that is, arranged at intervals. The wafer box 217 is composed of a heat-resistant material such as quartz, SiC, etc. At the lower part of the wafer box 217, a heat insulation plate 218 composed of a heat-resistant material such as quartz, SiC, etc. is supported in multiple stages (not shown). Through such a structure, it is difficult for the heat from the heater 207 to be transmitted to the sealing cap 219 side. However, the present embodiment is not limited to the above method. For example, the heat insulation plate 218 may not be provided at the lower part of the wafer box 217, and an insulation cylinder composed of a heat-resistant material such as quartz, SiC, etc. as a cylindrical component may be provided.
构成为在内管204内设置作为温度检测器的温度传感器263，基于由温度传感器263检测的温度信息来调整对加热器207的通电量，能够使处理室201内的温度达到所希望的温度分布。温度传感器263与喷嘴410,420,430,440同样地构成为L字型，沿着内管204的内壁设置。The temperature sensor 263 as a temperature detector is provided in the inner tube 204, and the amount of current supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, so that the temperature in the processing chamber 201 can reach a desired temperature distribution. The temperature sensor 263 is L-shaped like the nozzles 410, 420, 430, 440, and is provided along the inner wall of the inner tube 204.
作为控制部(控制单元)的控制器280构成为具有CPU(Central Processing Unit，中央处理器)280a、RAM(Random Access Memory，随机储存器)280b、存储装置280c和I/O接口280d的计算机。构成为RAM280b、存储装置280c、I/O接口280d能够经由内部总线与CPU280a进行数据交换。控制器280与例如作为触摸面板等而构成的输入输出装置282连接。The controller 280 as a control unit (control unit) is configured as a computer having a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage device 280c, and an I/O interface 280d. The RAM 280b, the storage device 280c, and the I/O interface 280d are configured to be able to exchange data with the CPU 280a via an internal bus. The controller 280 is connected to an input/output device 282 configured as, for example, a touch panel.
存储装置280c例如由闪存、HDD(Hard Disk Drive，硬盘驱动器)等构成。在存储装置280c内储存着控制基板处理装置的动作的控制程序、记载了后述的半导体装置的制造方法的过程、条件等的制程配方等，并能够读出。制程配方是将后述的半导体装置的制造方法中的各工序(各步骤)进行组合以使得由控制器280来执行并得到预定结果，作为程序来发挥功能。以下，将这些制程配方、控制程序等简单地总称为程序。本说明书中在使用“程序”的术语时，包括仅为单独制程配方的情形，包括仅为单独控制程序的情形，也包括其二者的情形。RAM280b作为将由CPU280a读出的程序、数据等临时保存的存储区域(工作区域)而构成。The storage device 280c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the actions of the substrate processing device, a process recipe that records the process, conditions, etc. of the semiconductor device manufacturing method described later, etc. are stored in the storage device 280c and can be read out. The process recipe is a combination of the various processes (steps) in the semiconductor device manufacturing method described later so that it is executed by the controller 280 and a predetermined result is obtained, and functions as a program. Hereinafter, these process recipes, control programs, etc. are simply collectively referred to as programs. When the term "program" is used in this specification, it includes the case of only a single process recipe, the case of only a single control program, and the case of both. RAM280b is configured as a storage area (working area) for temporarily storing programs, data, etc. read by CPU280a.
I/O接口280d与上述的MFC312,322,332,342,512,522,532,542、阀门314,324,334,344,514,524,534,544、压力传感器245、APC阀门231a、真空泵246、加热器207、温度传感器263、旋转机构267、晶圆盒升降机115等连接。The I/O interface 280d is connected to the above-mentioned MFC312, 322, 332, 342, 512, 522, 532, 542, valves 314, 324, 334, 344, 514, 524, 534, 544, pressure sensor 245, APC valve 231a, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, wafer box elevator 115, etc.
CPU280a构成为从存储装置280c读出控制程序并执行，同时对应来自输入输出装置282的操作指令的输入等，从存储装置280c读出配方等。CPU280a还构成为按照读出的配方的内容，控制由MFC312,322,332,342,512,522,532,542进行的各种气体的流量调整动作、阀门314,324,334,344,514,524,534,544的开关动作、APC阀门231a的开关动作和由APC阀门231a进行的基于压力传感器245的压力调整动作、基于温度传感器263的加热器207的温度调整动作、真空泵246的起动和停止、由旋转机构267进行的晶圆盒217的旋转和旋转速度调节动作、由晶圆盒升降机115进行的晶圆盒217的升降动作、晶圆200向晶圆盒217的容纳动作等。The CPU 280 a is configured to read out a control program from the storage device 280 c and execute it, and to read out a recipe or the like from the storage device 280 c in response to input of an operation command from the input/output device 282 or the like. CPU280a is also configured to control the flow adjustment actions of various gases performed by MFC312, 322, 332, 342, 512, 522, 532, 542, the switching actions of valves 314, 324, 334, 344, 514, 524, 534, 544, the switching actions of APC valve 231a and the pressure adjustment actions based on pressure sensor 245 performed by APC valve 231a, the temperature adjustment actions of heater 207 based on temperature sensor 263, the start and stop of vacuum pump 246, the rotation and rotation speed adjustment actions of wafer box 217 performed by rotating mechanism 267, the lifting and lowering actions of wafer box 217 performed by wafer box elevator 115, the accommodation action of wafer 200 into wafer box 217, etc. according to the contents of the read recipe.
控制器280可以通过将存储在外部存储装置(例如，磁带、软盘、硬盘等磁盘、CD、DVD等光盘、MO等光磁盘、USB存储器、存储卡等半导体存储器等)283中的上述程序安装到计算机中来构成。存储装置280c、外部存储装置283作为能够由计算机读取的记录介质而构成。以下，将这些简单地总称为记录介质。本说明书中的记录介质包括仅为单独的存储装置280c的情形，包括仅为单独的外部存储装置283的情形，或者包括其二者的情形。需说明的是，向计算机提供程序，也可以不使用外部存储装置283，而利用互联网、专线等通信方式来进行。The controller 280 can be constructed by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a magnetic tape, a floppy disk, a hard disk, an optical disk such as a CD, a DVD, an optical magnetic disk such as an MO, a USB memory, a semiconductor memory such as a memory card, etc.) 283 into a computer. The storage device 280c and the external storage device 283 are constructed as a recording medium that can be read by a computer. Hereinafter, these are simply collectively referred to as recording media. The recording medium in this specification includes a case where there is only a single storage device 280c, a case where there is only a single external storage device 283, or a case where both of them are included. It should be noted that providing a program to a computer can also be done without using an external storage device 283, but by using communication methods such as the Internet and a dedicated line.
(2)基板处理工序(2) Substrate processing steps
作为半导体装置(设备)的制造工序的一个工序，使用图4对于向基板供给含金属气体和含氧气体以进行在基板上形成金属氧化膜的成膜工序的流程例进行说明。成膜工序通过使用上述基板处理装置10的处理炉202来执行。以下的说明中，构成基板处理装置10的各部的动作由控制器280来控制。As one process of the manufacturing process of the semiconductor device (equipment), an example of a flow chart of a film forming process of supplying a metal-containing gas and an oxygen-containing gas to a substrate to form a metal oxide film on the substrate is described using FIG4. The film forming process is performed by using the processing furnace 202 of the above-mentioned substrate processing apparatus 10. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 280.
本实施方式中，通过将如下工序进行预定次数(n次)，从而在晶圆200上形成含有Zr和O的氧化锆膜(ZrO膜)，即，以预定温度对于将作为基板的多张晶圆200以堆载的状态来容纳的处理室201进行加热，同时从在喷嘴410上开口的多个气体供给孔410a向处理室201供给作为原料气体的TEMAZ气体的工序，以及从在喷嘴420,430,440上开口的气体供给孔420a,430a,440a供给反应气体的工序。In this embodiment, a zirconium oxide film (ZrO film) containing Zr and O is formed on the wafer 200 by performing the following steps a predetermined number of times (n times), namely, heating a processing chamber 201 that accommodates a plurality of wafers 200 as substrates in a stacked state at a predetermined temperature, and simultaneously supplying TEMAZ gas as a raw material gas to the processing chamber 201 from a plurality of gas supply holes 410a opened on a nozzle 410, and supplying a reaction gas from gas supply holes 420a, 430a, 440a opened on nozzles 420, 430, 440.
需说明的是，本说明书中，在使用“晶圆”的术语时，包括意味着“晶圆自身”的含义的情形、意味着“晶圆与在其表面形成的预定的层、膜等的层叠体(集合体)”的含义的情形(即，包括在表面上形成的预定的层、膜等而称为晶圆的情形)。此外，本说明书中在使用“晶圆表面”的术语时，包括意味着“晶圆自身的表面(露出面)”的含义的情形、意味着“在晶圆上形成的预定的层、膜等的表面，即，作为层叠体的晶圆的最外表面”的含义的情形。需说明的是，本说明书中在使用“基板”的术语时与使用“晶圆”的术语时的意思相同。It should be noted that in this specification, when the term "wafer" is used, it includes the case where it means "the wafer itself" and the case where it means "a stack (assembly) of a wafer and predetermined layers, films, etc. formed on its surface" (that is, the case where a wafer is called a wafer because of the predetermined layers, films, etc. formed on the surface). In addition, when the term "wafer surface" is used in this specification, it includes the case where it means "the surface (exposed surface) of the wafer itself" and the case where it means "the surface of the predetermined layers, films, etc. formed on the wafer, that is, the outermost surface of the wafer as a stack". It should be noted that the term "substrate" used in this specification has the same meaning as the term "wafer".
(晶圆运入)(Wafer import)
将多张晶圆200运入处理室201内(晶圆盒搭载)。具体而言，将多张晶圆200装填于晶圆盒217(晶圆装载)，然后，如图1所示，支撑多张晶圆200的晶圆盒217由晶圆盒升降机115抬升运入到处理室201内。在该状态下，成为密封帽219经由O型圈220b而将反应管203的下端开口闭塞的状态。The plurality of wafers 200 are transported into the processing chamber 201 (wafer box loading). Specifically, the plurality of wafers 200 are loaded into the wafer box 217 (wafer loading), and then, as shown in FIG. 1 , the wafer box 217 supporting the plurality of wafers 200 is lifted by the wafer box elevator 115 and transported into the processing chamber 201. In this state, the sealing cap 219 is in a state of closing the lower end opening of the reaction tube 203 via the O-ring 220b.
(压力调整和温度调整)(Pressure adjustment and temperature adjustment)
由真空泵246进行真空排气，使得处理室201内达到所希望的压力(真空度)。这时，处理室201内的压力由压力传感器245测定，并基于该测定的压力信息对APC阀门231a进行反馈控制(压力调整)。真空泵246至少在直至对晶圆200的处理结束的期间维持持续运作的状态。此外，由加热器207进行加热，使得处理室201内达到所希望的温度。这时，基于温度传感器263检测的温度信息对加热器207的通电量进行反馈控制，使得处理室201内达到所希望的温度分布(温度调整)。由加热器207进行的处理室201内的加热至少在直至对晶圆200的处理结束的期间持续进行。The vacuum pump 246 performs vacuum exhaust so that the desired pressure (vacuum degree) is reached in the processing chamber 201. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 231a is feedback-controlled (pressure adjusted) based on the measured pressure information. The vacuum pump 246 maintains a state of continuous operation at least until the processing of the wafer 200 is completed. In addition, the heater 207 performs heating so that the processing chamber 201 reaches a desired temperature. At this time, the amount of power supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the desired temperature distribution (temperature adjustment) is achieved in the processing chamber 201. The heating of the processing chamber 201 by the heater 207 is continued at least until the processing of the wafer 200 is completed.
[成膜工序][Film forming process]
执行在晶圆200上形成作为金属氧化膜的高介电常数氧化膜的ZrO膜的步骤。A step of forming a ZrO film as a high dielectric constant oxide film of a metal oxide film on the wafer 200 is performed.
(TEMAZ气体供给步骤)(TEMAZ gas supply procedure)
打开阀门314，在气体供给管310内，作为处理气体，流入作为原料气体的TEMAZ气体。TEMAZ气体由MFC312进行流量调整，从喷嘴410的气体供给孔410a供给至处理室201内，由排气管231进行排气。此时，成为对晶圆200供给TEMAZ气体的状态。与此同时，打开阀门514，在气体供给管510内流入N2气体。流入气体供给管510内的N2气体由MFC512进行流量调整。N2气体与TEMAZ气体一起从喷嘴410的供给孔410a供给至处理室201内，由排气管231进行排气。The valve 314 is opened, and the TEMAZ gas as the raw material gas flows into the gas supply pipe 310 as the processing gas. The TEMAZ gas is flow-regulated by the MFC 312, and is supplied from the gas supply hole 410a of the nozzle 410 to the processing chamber 201, and is exhausted by the exhaust pipe 231. At this time, the TEMAZ gas is supplied to the wafer 200. At the same time, the valve 514 is opened, and theN2 gas flows into the gas supply pipe 510. TheN2 gas flowing into the gas supply pipe 510 is flow-regulated by the MFC 512. TheN2 gas is supplied from the supply hole 410a of the nozzle 410 to the processing chamber 201 together with the TEMAZ gas, and is exhausted by the exhaust pipe 231.
另外，为了防止TEMAZ气体侵入到喷嘴420,430,440内，打开阀门524,534,544，在气体供给管520,530,540内流入N2气体。N2气体经由气体供给管320,330,340、喷嘴420,430,440供给至处理室201内，由排气管231进行排气。In order to prevent the TEMAZ gas from entering the nozzles 420, 430, 440, valves 524, 534, 544 are opened to allowN2 gas to flow into the gas supply pipes 520, 530, 540.N2 gas is supplied to the processing chamber 201 via the gas supply pipes 320, 330, 340 and the nozzles 420, 430, 440, and then exhausted by the exhaust pipe 231.
此时，适当地调整APC阀门231a使得处理室201内的压力例如为20～500Pa的范围内的压力。本说明书中的“20～500Pa”这样的数值范围的表示方法是指下限值和上限值都包含在该范围的意思。因此，例如，“20Pa～500Pa”是指20Pa以上500以下的意思。其他数值范围也是同样。由MFC312控制的TEMAZ气体的供给流量例如设为0.1～5.0g/分钟的范围内的流量。晶圆200暴露于TEMAZ的时间，即，气体供给时间(照射时间)例如设为10～300秒间的范围内的时间。此时，加热器单元207的温度设定为使得晶圆200的温度例如为150～300℃的范围内的温度的温度。通过供给TEMAZ气体，在晶圆200上形成含Zr层。含Zr层中，作为残留元素，少量残留源自TEMAZ气体的有机物(碳(C)、氢(H)、氮(N)等)。At this time, the APC valve 231a is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 20 to 500 Pa. The method of expressing a numerical range such as "20 to 500 Pa" in this specification means that both the lower limit and the upper limit are included in the range. Therefore, for example, "20Pa to 500Pa" means 20Pa or more and 500 or less. The same applies to other numerical ranges. The supply flow rate of the TEMAZ gas controlled by the MFC312 is set to a flow rate in the range of 0.1 to 5.0 g/min, for example. The time for which the wafer 200 is exposed to TEMAZ, that is, the gas supply time (irradiation time), is set to a time in the range of 10 to 300 seconds, for example. At this time, the temperature of the heater unit 207 is set to a temperature that makes the temperature of the wafer 200, for example, in the range of 150 to 300°C. By supplying TEMAZ gas, a Zr-containing layer is formed on the wafer 200. In the Zr-containing layer, a small amount of organic matter (carbon (C), hydrogen (H), nitrogen (N), etc.) derived from the TEMAZ gas remains as residual elements.
(残留气体除去步骤)(Residual gas removal step)
在以预定时间供给TEMAZ气体后，关闭阀门314，停止供给TEMAZ气体。此时，维持排气管231的APC阀门231a打开的状态，由真空泵246对处理室201内进行真空排气，将处理室201内残留的未反应TEMAZ气体或贡献于反应后的TEMAZ气体从处理室201内排除。此时，维持阀门524,534,544打开的状态，维持向处理室201内供给N2气体。N2气体作为吹扫气体来发挥作用，能够提高将处理室201内残留的未反应TEMAZ气体或贡献于反应后的TEMAZ气体从处理室201内排除的效果。After the TEMAZ gas is supplied for a predetermined time, the valve 314 is closed to stop the supply of the TEMAZ gas. At this time, the APC valve 231a of the exhaust pipe 231 is maintained in an open state, and the processing chamber 201 is vacuum-exhausted by the vacuum pump 246 to remove the unreacted TEMAZ gas remaining in the processing chamber 201 or the TEMAZ gas contributed to the reaction from the processing chamber 201. At this time, the valves 524, 534, and 544 are maintained in an open state, and theN2 gas is kept supplied to the processing chamber 201. TheN2 gas acts as a purge gas, which can improve the effect of removing the unreacted TEMAZ gas remaining in the processing chamber 201 or the TEMAZ gas contributed to the reaction from the processing chamber 201.
(O3气体供给步骤)(O3 gas supply step)
在将处理室201内的残留气体除去后，打开阀门324,334,344，在气体供给管320,330,340内流入作为含氧气体的O3气体。O3气体由MFC322,332,342进行流量调整，从喷嘴420,430,440的气体供给孔420a,430a,440a供给至处理室201内，由排气管231进行排气。此时，成为对晶圆200供给O3气体的状态。与此同时，打开阀门524,534,544，在气体供给管520,530,540内流入N2气体等非活性气体。流入气体供给管520,530,540内的N2气体由MFC522,532,542进行流量调整，与O3气体一起供给至处理室201内，由排气管231进行排气。需说明的是，此时，为了防止O3气体侵入到喷嘴410内，打开阀门514，在气体供给管510内流入例如N2气体。N2气体经由气体供给管310喷嘴410供给至处理室201内，由排气管231进行排气。After the residual gas in the processing chamber 201 is removed, the valves 324, 334, 344 are opened, andO3 gas as an oxygen-containing gas is flowed into the gas supply pipes 320, 330, 340. TheO3 gas is flow-controlled by the MFCs 322, 332, 342, and is supplied to the processing chamber 201 from the gas supply holes 420a, 430a, 440a of the nozzles 420, 430, 440, and is exhausted by the exhaust pipe 231. At this time, theO3 gas is supplied to the wafer 200. At the same time, the valves 524, 534, 544 are opened, and an inactive gas such asN2 gas is flowed into the gas supply pipes 520, 530, 540. TheN2 gas flowing into the gas supply pipes 520, 530, 540 is flow-controlled by the MFCs 522, 532, 542, and is supplied to the processing chamber 201 together with theO3 gas, and is exhausted by the exhaust pipe 231. It should be noted that, at this time, in order to preventO3 gas from invading the nozzle 410, the valve 514 is opened andN2 gas, for example, flows into the gas supply pipe 510. TheN2 gas is supplied to the processing chamber 201 through the nozzle 410 of the gas supply pipe 310 and exhausted by the exhaust pipe 231.
在O3气体流动时，适当地调整APC阀门231a以使得处理室201内的压力例如为110Pa。从由MFC322,332,342控制的3个喷嘴420,430,440供给的O3气体的合计供给流量例如设为70slm。由MFC322,332,342和APC阀门231a控制的O3气体在晶圆200中心部的流速例如设为7.0m/s～8.5m/s的范围内的流速。O3气体的分压例如设为9.0Pa(处理室201内的压力的约8.0％)～12.0Pa(处理室201内的压力的约11.0％)，更优选设为11.0Pa(处理室201内的压力的10.0％)的压力。由臭氧发生器供给至处理室201内的O3气体的浓度例如设为150g/Nm3～300g/Nm3，更优选设为250g/Nm3。如果O3气体的浓度小于150g/Nm3，则气体浓度低，会有膜中杂质(C、碳)的浓度增多而膜质下降的情形。另外，如果O3气体的浓度超过300g/Nm3，则会有气体浓度增高而使所形成的ZrO层的基底也氧化的情形。具体而言，在DRAM电容的情形下，基底是TiN膜(氮化钛膜)，如果由TiN膜构成的电极发生氧化，则TiO、TiON的界面的氧化膜增加，从而有EOT(等效氧化膜厚)增加的情形，因异常氧化而产生应力，TiN电极失效的情形。另外，在Logic的栅极氧化膜的情形下，基底是Si膜(硅膜)，如果Si界面发生氧化，则SiO膜增加，从而有EOT增加的情形。通过使O3气体的浓度为150g/Nm3～300g/Nm3，不仅抑制膜中的杂质浓度的升高而不降低膜质，还能形成ZrO膜而不会氧化至所形成的膜的基底。晶圆200暴露于O3气体的时间，即，气体供给时间(照射时间)，例如设为30～120秒的范围内的时间。此时，加热器单元207的温度设为与步骤S101同样的温度。通过供给O3气体，在晶圆200上形成的含Zr层被氧化，形成ZrO层。此时，ZrO层中少量残留源自TEMAZ气体的有机物(碳(C)、氢(H)、氮(N)等)。When the O3 gas flows, the APC valve 231a is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, 110 Pa. The total supply flow rate of the O3 gas supplied from the three nozzles 420, 430, and 440 controlled by the MFCs 322, 332, and 342 is, for example, set to 70 slm. The flow rate of the O3 gas at the center of the wafer 200 controlled by the MFCs 322, 332, and 342 and the APC valve 231a is, for example, set to a flow rate in the range of 7.0 m/s to 8.5 m/s. The partial pressure of theO 3 gas is, for example, set to 9.0 Pa (about 8.0% of the pressure in the processing chamber 201) to 12.0 Pa (about 11.0% of the pressure in the processing chamber 201), and more preferably set to a pressure of 11.0 Pa (10.0% of the pressure in the processing chamber 201). The concentration of theO3 gas supplied from the ozone generator to the processing chamber 201 is set to, for example, 150 g/Nm3 to 300 g/Nm3 , and more preferably 250 g/Nm3 . If the concentration of theO3 gas is less than 150 g/Nm3 , the gas concentration is low, and the concentration of impurities (C, carbon) in the film increases, resulting in a decrease in film quality. In addition, if the concentration of theO3 gas exceeds 300 g/Nm3 , the gas concentration increases, and the substrate of the formed ZrO layer is also oxidized. Specifically, in the case of DRAM capacitors, the substrate is a TiN film (titanium nitride film). If the electrode composed of the TiN film is oxidized, the oxide film at the interface of TiO and TiON increases, thereby increasing the EOT (equivalent oxide film thickness), generating stress due to abnormal oxidation, and causing the TiN electrode to fail. In addition, in the case of the gate oxide film of Logic, the base is a Si film (silicon film). If oxidation occurs at the Si interface, the SiO film increases, thereby increasing the EOT. By setting the concentration of the O3 gas to 150 g/Nm3 to 300 g/Nm3 , not only can the increase in the impurity concentration in the film be suppressed without reducing the film quality, but also a ZrO film can be formed without oxidizing the base of the formed film. The time for which the wafer 200 is exposed to the O3 gas, that is, the gas supply time (irradiation time), is set to a time in the range of 30 to 120 seconds, for example. At this time, the temperature of the heater unit 207 is set to the same temperature as step S101. By supplying O3 gas, the Zr-containing layer formed on the wafer 200 is oxidized to form a ZrO layer. At this time, a small amount of organic matter (carbon (C), hydrogen (H), nitrogen (N), etc.) derived from the TEMAZ gas remains in the ZrO layer.
需说明的是，本实施方式中，使用3个喷嘴420,430,440来供给O3气体，但喷嘴的个数不限，也可以由例如1个喷嘴来供给O3气体。It should be noted that, in the present embodiment, three nozzles 420, 430, 440 are used to supplyO3 gas, but the number of nozzles is not limited, andO3 gas may also be supplied by, for example, one nozzle.
作为供给O3气体的处理条件，尤其是，通过将O3气体的流速设为7.0m/s～8.5m/s的范围内的预定流速、将O3气体的分压设为9.0Pa(处理室201的压力的约8.0％)～12.0Pa(处理室的压力的约11.0％)的范围内的预定分压来执行O3气体供给步骤，从而到达晶圆中央部的O3气体的供给量变得充分，在晶圆面内充分进行氧化，能够提高晶圆面内的膜厚均匀性。图5中显示在从晶圆面内的晶圆中央部至边缘部之间的等距离的圆周上分别测定多点的膜厚并将其平均而得到的平均膜厚。与图5的实线602所表示的以往的方法得到的平均膜厚相比，由实线601所表示的本实施方式的方法得到的平均膜厚中，平均膜厚最小的位置(实线601中为晶圆中央部)的膜厚与平均膜厚最大位置(实线601中为晶圆的边缘部)的膜厚的膜厚差(ΔThickness)变小。即，由图5可知，能够提高作为高介电常数氧化膜的ZrO膜的晶圆面内的膜厚均匀性。As the processing conditions for supplyingO3 gas, in particular, the O3 gas supply step is performed by setting the flow rate ofO3 gas to a predetermined flow rate within the range of 7.0m/s to 8.5m/s and the partial pressure ofO3 gas to a predetermined partial pressure within the range of 9.0Pa (about 8.0% of the pressure of the processing chamber 201) to 12.0Pa (about 11.0% of the pressure of the processing chamber), so that the supply amount ofO3 gas reaching the center of the wafer becomes sufficient, oxidation is fully performed within the wafer surface, and the uniformity of the film thickness within the wafer surface can be improved.FIG5 shows the average film thickness obtained by measuring the film thickness at multiple points on the circumference of the wafer with equal distances from the center to the edge of the wafer surface and averaging them. Compared with the average film thickness obtained by the conventional method represented by the solid line 602 in FIG5 , the average film thickness obtained by the method of the present embodiment represented by the solid line 601 has a smaller film thickness difference (ΔThickness) between the film thickness at the position where the average film thickness is the smallest (the wafer center portion in the solid line 601) and the film thickness at the position where the average film thickness is the largest (the wafer edge portion in the solid line 601). That is, as can be seen from FIG5 , the uniformity of the film thickness of the ZrO film as a high dielectric constant oxide film within the wafer surface can be improved.
需说明的是，如果O3气体的流速小于7.0m/s，则到达晶圆中央部的O3气体的供给量会不足，晶圆中央部的膜厚变薄，会有晶圆面内膜厚均匀性达不到预定的分布的情形。另外，如果O3气体的流速超过8.5m/s，在喷嘴的气体供给孔中易于产生气体的涡流，因而使晶圆边缘部分的膜厚变厚，会有晶圆面内膜厚均匀性达不到预定的分布的情形。如果O3气体的分压小于9.0Pa，则氧化变得不充分，因而会有晶圆面内膜厚均匀性达不到预定的分布的情形。另外，如果O3气体的分压超过12.0Pa，成膜时因基底过氧化，尤其是晶圆边缘部分的膜厚变厚，会有晶圆面内膜厚均匀性达不到预定的分布的情形。It should be noted that if the flow rate ofO3 gas is less than 7.0m/s, the amount ofO3 gas supplied to the center of the wafer will be insufficient, the film thickness in the center of the wafer will become thinner, and the uniformity of the film thickness on the wafer surface may not reach the predetermined distribution. In addition, if the flow rate ofO3 gas exceeds 8.5m/s, gas vortices are easily generated in the gas supply hole of the nozzle, thereby thickening the film thickness at the edge of the wafer, and the uniformity of the film thickness on the wafer surface may not reach the predetermined distribution. If the partial pressure ofO3 gas is less than 9.0Pa, oxidation becomes insufficient, and the uniformity of the film thickness on the wafer surface may not reach the predetermined distribution. In addition, if the partial pressure ofO3 gas exceeds 12.0Pa, the substrate is over-oxidized during film formation, especially the film thickness at the edge of the wafer becomes thicker, and the uniformity of the film thickness on the wafer surface may not reach the predetermined distribution.
(残留气体除去步骤)(Residual gas removal step)
在形成ZrO层后，关闭阀门324，停止供给O3气体。然后，通过与O3气体供给步骤前的残留气体除去步骤同样的处理过程，将处理室201内残留的未反应O3气体或贡献于ZrO层形成后的O3气体从处理室201内排除。After theZrO layer is formed, the valve 324 is closed to stop the supply ofO3 gas. Then, the unreactedO3 gas remaining in the processing chamber 201 or theO3 gas contributing to the formation of the ZrO layer is removed from the processing chamber 201 through the same processing as the residual gas removal step before the O3 gas supply step.
(实施预定次数)(Scheduled number of implementations)
通过将依次进行上述步骤的循环进行1次以上(预定次数(n次)，在晶圆200上形成预定厚度的ZrO膜。上述循环优选重复多次。这样，在形成ZrO膜的情形下，能够(分时地)交替向晶圆200供给TEMAZ气体和O3气体而使它们不相互混合。By performing the above steps in a cycle one or more times (predetermined number of times (n times) in sequence, a ZrO film having a predetermined thickness is formed on the wafer 200. The above cycle is preferably repeated a plurality of times. In this way, when forming a ZrO film, TEMAZ gas andO3 gas can be alternately supplied to the wafer 200 (in a time-sharing manner) without mixing them with each other.
(后吹扫和大气压复原)(Post-purge and atmospheric pressure recovery)
成膜步骤结束后，打开阀门514,524,534,544，分别从气体供给管510,520,530,540向处理室201内供给N2气体，从排气管231进行排气。N2气体作为吹扫气体来发挥作用，由此，由非活性气体对处理室201内进行吹扫，将处理室201内残留的气体、副生成物从处理室201内除去(后吹扫)。然后，将处理室201内的气氛置换为非活性气体(非活性气体置换)，将处理室201内的压力复原为常压(大气压复原)。After the film forming step is completed, valves 514, 524, 534, and 544 are opened to supplyN2 gas from gas supply pipes 510, 520, 530, and 540 to the processing chamber 201, respectively, and exhaust is performed from the exhaust pipe 231. TheN2 gas acts as a purge gas, thereby purging the processing chamber 201 with an inert gas, and removing the residual gas and by-products in the processing chamber 201 from the processing chamber 201 (post-purge). Then, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure restoration).
(晶圆运出)(Wafer shipment)
然后，由晶圆盒升降机115使密封帽219降下，打开反应管203的下端。然后，将处理后的晶圆200在由晶圆盒217支撑的状态下从反应管203的下端运出到反应管203的外部(晶圆盒拆卸)。然后，将处理后的晶圆200从晶圆盒217中取出(晶圆卸载)。Then, the sealing cap 219 is lowered by the wafer box elevator 115 to open the lower end of the reaction tube 203. Then, the processed wafer 200 is carried out from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the wafer box 217 (wafer box removal). Then, the processed wafer 200 is taken out of the wafer box 217 (wafer unloading).
以上对本公开的实施方式进行了具体说明。但本公开不限于上述实施方式，在不脱离其宗旨的范围内可进行各种变更。The embodiments of the present disclosure have been specifically described above, but the present disclosure is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the present disclosure.
上述实施方式中，作为高介电常数氧化膜，例示了ZrO膜，但不限于此，只要是比ZrO的结合能低或比Zr氯化物的蒸气压高的氧化物(包括混合氧化物)即可。例如，作为高介电常数氧化物，在采用ZrOy、HfOy、AlxOy、HfSixOy、HfAlxOy、ZrSiOy、ZrAlOy、TixOy、TaxOy(x和y为大于0的整数或小数)时也同样可以适用。即，可以适用于氧化锆膜、氧化铪膜、氧化铝膜、氧化钛膜、氧化钽膜、氧化铌膜。In the above embodiment, as a high dielectric constant oxide film, a ZrO film is exemplified, but it is not limited thereto, as long as it is an oxide (including a mixed oxide) with a lower binding energy than ZrO or a higher vapor pressure than Zr chloride. For example, as a high dielectric constant oxide, when ZrOy, HfOy, AlxOy, HfSixOy, HfAlxOy, ZrSiOy, ZrAlOy, TixOy, TaxOy (x and y are integers or decimals greater than 0) are used, the same can be applied. That is, it can be applied to zirconium oxide film, hafnium oxide film, aluminum oxide film, titanium oxide film, tantalum oxide film, and niobium oxide film.
另外，上述实施方式中，作为有机系原料，例示了TEMAZ，但不限于此，也可以适用其他原料。例如，也可以适用四乙基甲基氨基铪(Hf[N(CH3)CH2CH3]4、TEMAH)等有机系Hf原料(包括有机系Hf原料的含铪气体)、三甲基铝((CH3)3Al，TMA)等有机系Al原料(包括有机系Al原料的含铝气体)、三(二甲基)氨基硅烷(SiH(N(CH3)2)3、TDMAS)等有机系Si原料(包括有机系Si原料的含硅气体)、四(二甲基)氨基钛(Ti[N(CH3)2]4，TDMAT)等有机系Ti原料(包括有机系Ti原料的含钛气体)、五(二甲基)氨基钽(Ta(N(CH3)2)5，PDMAT)等有机系Ta原料(包括有机系Ta原料的含钽气体)、三(二甲基)氨基叔丁基亚氨基铌((tert-C4H9)N＝Nb[N(C2H5)2]3，TBTDEN)等有机系Nb原料(包括有机系Nb原料的含铌气体)等。Furthermore, in the above-mentioned embodiment, TEMAZ is exemplified as the organic raw material, but the present invention is not limited thereto, and other raw materials may also be applied. For example, organic Hf raw materials (including hafnium-containing gas of organic Hf raw materials) such as tetraethylmethylaminohafnium (Hf[N(CH3 )CH2 CH3 ]4 , TEMAH), organic Al raw materials (including aluminum-containing gas of organic Al raw materials) such as trimethylaluminum ((CH3 ) 3 Al, TMA), organic Si raw materials (including silicon-containing gas of organic Si raw materials) such as tris(dimethyl)aminosilane (SiH(N(CH 3 )2 )3 , TDMAS), organic Ti raw materials (including titanium-containing gas of organic Ti raw materials) such as tetrakis(dimethyl)aminotitanium (Ti[N(CH3 )2 ]4 , TDMAT), organic Ta raw materials (including tantalum-containing gas of organic Ta raw materials) such as penta(dimethyl)aminotantalum (Ta(N(CH3 )2 )5 , PDMAT), tris(dimethyl)aminotert-butylimideniobium ((tert-C4 H9 ) Organic Nb raw materials such as N=Nb[N(C2 H5 )2 ]3 , TBTDEN) (including niobium-containing gas of the organic Nb raw materials) and the like.
另外，上述实施方式中，在成膜工序中显示了使用O3气体的例子，但不限于此，只要是含氧气体，也可以适用其他原料。例如，也可以适用氧(O2)、O2等离子体、水蒸气(H2O)、过氧化氢(H2O2)、氧化亚氮(N2O)等。In addition, in the above embodiment, an example of usingO3 gas in the film forming process is shown, but the present invention is not limited thereto, and other materials may be used as long as they are oxygen-containing gases. For example, oxygen (O2 ),O2 plasma, water vapor (H2O ), hydrogen peroxide (H2O2 ), nitrous oxide (N2O ), etc.may also be used.
另外，作为非活性气体，除了N2气体之外，也可以使用Ar气体、He气体、Ne气体、Xe气体等惰性气体。In addition, as the inert gas, inert gas such as Ar gas, He gas, Ne gas, or Xe gas may be used in addition to N2 gas.
这些各种薄膜的形成中所使用的制程配方(记载着处理过程、处理条件等的程序)优选根据基板处理等的内容(要形成的薄膜的膜种、组成比、膜质、膜厚、处理过程、处理条件等)分别单独准备(准备多个)。而且，优选在开始基板处理时，根据基板处理等的内容，从多个制程配方中适宜选择合适的制程配方等。具体而言，优选将根据基板处理等的内容单独准备的多个制程配方等经由通信电路、记录该制程配方等的记录介质(外部存储装置283)预先储存(安装)在基板处理装置所具有的存储装置280c内。而且，优选在开始基板处理时，基板处理装置所具有的CPU280a根据基板处理的内容，从储存在存储装置280c内的多个制程配方等中适宜选择合适的制程配方。通过这样的构成，能够由1台基板处理装置通用地且再现性良好地形成各自膜种、组成比、膜质、膜厚的薄膜。此外，能够降低操作者的操作负担(输入处理过程、处理条件等的负担等)，避免操作失误，并能快速地开始基板处理。The process recipes (programs recording the treatment process, treatment conditions, etc.) used in the formation of these various thin films are preferably prepared separately (preparing multiple) according to the content of the substrate treatment, etc. (film type, composition ratio, film quality, film thickness, treatment process, treatment conditions, etc. of the thin film to be formed). Moreover, it is preferred that when the substrate treatment is started, a suitable process recipe, etc. is appropriately selected from a plurality of process recipes according to the content of the substrate treatment, etc. Specifically, it is preferred that a plurality of process recipes, etc. prepared separately according to the content of the substrate treatment, etc. are pre-stored (installed) in the storage device 280c possessed by the substrate treatment device via a communication circuit and a recording medium (external storage device 283) recording the process recipes, etc. Moreover, it is preferred that when the substrate treatment is started, the CPU 280a possessed by the substrate treatment device appropriately selects a suitable process recipe from a plurality of process recipes, etc. stored in the storage device 280c according to the content of the substrate treatment. Through such a configuration, thin films of respective film types, composition ratios, film qualities, and film thicknesses can be formed universally and with good reproducibility by one substrate treatment device. In addition, the operator's operational burden (burden of inputting processing procedures, processing conditions, etc.) can be reduced, operational errors can be avoided, and substrate processing can be started quickly.
此外，本公开也能够通过例如改变现有的基板处理装置的制程配方等来实现。在改变制程配方时，也能够将本公开涉及的制程配方等经由通信电路、记录了该制程配方等的记录介质安装于现有的基板处理装置，或者操作现有的基板处理装置的输入输出装置，将制程配方等自身变更为本公开涉及的制程配方等。In addition, the present disclosure can also be implemented by, for example, changing the process recipe of an existing substrate processing device. When changing the process recipe, the process recipe of the present disclosure can be installed in the existing substrate processing device via a communication circuit or a recording medium recording the process recipe, or the input and output devices of the existing substrate processing device can be operated to change the process recipe itself to the process recipe of the present disclosure.
符号说明Explanation of symbols
10：基板处理装置，280：控制器，200：晶圆(基板)，201：处理室。10: substrate processing device, 280: controller, 200: wafer (substrate), 201: processing chamber.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019034074 | 2019-02-27 | ||
| JP2019-034074 | 2019-02-27 | ||
| PCT/JP2020/007335WO2020175427A1 (en) | 2019-02-27 | 2020-02-25 | Semiconductor device production method, substrate processing device, and program |
| Publication Number | Publication Date |
|---|---|
| CN113454762A CN113454762A (en) | 2021-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202080016017.XAActiveCN113454762B (en) | 2019-02-27 | 2020-02-25 | Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| Country | Link |
|---|---|
| JP (1) | JP7175375B2 (en) |
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| WO (1) | WO2020175427A1 (en) |
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| JP7175375B2 (en) | 2022-11-18 |
| KR20210093337A (en) | 2021-07-27 |
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