CN113441023A - Gas mixing mechanism, air inlet pipeline structure and semiconductor process equipment - Google Patents
Gas mixing mechanism, air inlet pipeline structure and semiconductor process equipmentDownload PDFInfo
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- CN113441023A CN113441023ACN202110843282.1ACN202110843282ACN113441023ACN 113441023 ACN113441023 ACN 113441023ACN 202110843282 ACN202110843282 ACN 202110843282ACN 113441023 ACN113441023 ACN 113441023A
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Abstract
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a gas mixing mechanism, an air inlet pipeline structure and semiconductor process equipment.
Background
In many processes of semiconductor manufacturing, wafers are processed in a process environment that is created by flowing process gases through a process chamber. The process gas comprises a dopant gas and a carrier gas, and the dopant gas is diluted by the carrier gas due to the small amount of the dopant gas, and the dopant gas and the carrier gas are mixed in a pipeline and then are conveyed into the process chamber. For example, in a Chemical Vapor Deposition (CVD) process, a dopant gas is typically mixed with hydrogen and then introduced into the process chamber.
In the related art, the counter-impact effect of the doping gas and the carrying gas in the mixing pipeline is weak, so that the mixing effect of the doping gas and the carrying gas is poor, and the mixing effect can be particularly expressed as that the doping gas and the carrying gas are obviously layered after being mixed. In the case of a non-uniform mixing of the dopant gas and the carrier gas, the process quality can be severely negatively affected.
Disclosure of Invention
The application discloses gas mixing mechanism, air inlet pipeline structure and semiconductor process equipment to promote the mixing uniformity of doping gas and carrier gas.
In order to solve the above problems, the following technical solutions are adopted in the present application:
in a first aspect, the present application provides a gas mixing mechanism for semiconductor processing equipment, comprising a gas mixing chamber, a dopant gas manifold, and a carrier gas manifold, wherein:
the gas mixing cavity is provided with a mixed flow inner cavity, and a first gas inlet, a second gas inlet and a gas outlet which are communicated with the mixed flow inner cavity, the first gas inlet and the second gas inlet are positioned at the first end of the gas mixing cavity, and the gas outlet is positioned at the second end of the gas mixing cavity;
the dopant gas branch pipe with first air inlet intercommunication, the carrier gas branch pipe with the second air inlet intercommunication, the axis of first air inlet with be first preset contained angle between the axis of second air inlet, so that pass through the dopant gas that first air inlet lets in with pass through the carrier gas that the second air inlet lets in forms mist in order to surround first direction pivoted mode, just mist certainly first end flow direction the second end, first direction does first end extremely the direction of second end.
In a second aspect, the present application provides an air inlet pipeline structure of semiconductor processing equipment, for introducing process gas into a process chamber of the semiconductor processing equipment, the air inlet pipeline structure includes a plurality of gas source pipelines, a gas mixing mechanism, a plurality of air inlet pipelines and a pressure control pipeline, wherein:
the gas source pipelines are communicated with the gas inlets of the gas mixing mechanism in a one-to-one correspondence manner and are used for introducing different process gases into the gas mixing mechanism;
the gas mixing mechanism is used for mixing the different process gases to form mixed gas;
one ends of the plurality of air inlet pipelines are communicated with the air outlet of the gas mixing mechanism, and the other ends of the plurality of air inlet pipelines are communicated with the process chamber and are used for introducing the mixed gas into the process chamber;
one end of the pressure control pipeline is communicated with the gas outlet of the gas mixing mechanism, the other end of the pressure control pipeline is communicated with the exhaust device of the semiconductor processing equipment and used for exhausting part of the mixed gas, and the pressure controller is arranged on the pressure control pipeline and used for controlling the flow rate of the mixed gas exhausted by the pressure control pipeline so as to keep the pressure in the plurality of gas inlet pipelines stable.
In a third aspect, the present application provides semiconductor processing apparatus comprising a process chamber and an air inlet conduit structure as described in the second aspect of the present application.
The technical scheme adopted by the application can achieve the following beneficial effects:
in the gas mixing mechanism disclosed in the application, be first preset contained angle between the axis of first air inlet and the axis of second air inlet to make the dopant gas who lets in through first air inlet and the carrier gas who lets in through the second air inlet form mist with the mode around first direction pivoted, and mist certainly first end flow direction the second end, first direction are the direction of first end to second end. Therefore, the gas mixing mechanism can rotate and mix the doping gas and the carrying gas, and when the mixing gas rotates and is conveyed in the mixing inner cavity, the conveying stroke of the mixing gas is increased, so that the mixing time is increased, and the mixing uniformity of the doping gas and the carrying gas can be improved undoubtedly; meanwhile, the mixed gas continuously collides with the cavity wall of the mixing inner cavity in the rotating and conveying process so as to intensify the intensity of the hedging mixing of the doping gas and the carrying gas and further improve the mixing uniformity of the doping gas and the carrying gas.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application.
In the drawings:
FIG. 1 is a schematic structural diagram of a gas mixing mechanism disclosed in an embodiment of the present application;
FIG. 2 is a cross-sectional view of a gas mixing mechanism disclosed in an embodiment of the present application from one perspective;
FIG. 3 is an enlarged view of a portion of FIG. 2;
FIG. 4 is a cross-sectional view of another perspective of the gas mixing mechanism disclosed in the embodiments of the present application and a partially enlarged view thereof;
FIG. 5 is a schematic structural diagram of a gas pipeline structure according to an embodiment of the present disclosure;
fig. 6 is an electrical schematic diagram of a gas pipeline structure disclosed in an embodiment of the present application.
Description of reference numerals:
100-a first gas source pipeline, 200-a second gas source pipeline,
300-gas mixing mechanism, 310-gas mixing cavity, 311-mixed flow inner cavity, 312-first gas inlet, 313-second gas inlet, 314-gas outlet, 320-doped gas branch pipe, 321-first pipe section, 330-carried gas branch pipe, 331-second pipe section, 332-third pipe section, 340-gas outlet branch pipe, 341-fourth pipe section, 311-mixed flow inner cavity,
400-a first air inlet pipeline, 500-a second air inlet pipeline,
600-pressure control pipeline, 700-first exhaust pipeline, 800-second exhaust pipeline,
MFC 001-first flow controller, MFC 002-second flow controller, MFC 003-third flow controller, MFC 004-fourth flow controller, EPC 005-pressure controller,
V031-first control valve, V041-second control valve, V032-third control valve, V042-fourth control valve, V051-fifth control valve,
CV 001-check valve, RUN 1-center intake passage, RUN 2-edge intake passage, VENT-exhaust.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Technical solutions disclosed in the embodiments of the present application are described in detail below with reference to the accompanying drawings.
In order to solve the problem of uneven mixing of the doping gas and the carrier gas in the related art, embodiments of the present application provide a gas mixing mechanism of a semiconductor processing apparatus for mixing the doping gas and the carrier gas to form a mixed gas. The types of dopant gas and carrier gas are different in different semiconductor manufacturing processes, for example, when a Chemical Vapor Deposition (CVD) process is used for epitaxial growth of silicon carbide, the dopant gas may be selected from nitrogen and trimethylaluminum, and the carrier gas may be selected from hydrogen; alternatively, the dopant gas may be silane, and the carrier gas may be nitrogen dioxide, etc.
As shown in fig. 1 to 4, agas mixing mechanism 300 disclosed in the embodiment of the present application includes agas mixing chamber 310, adopant gas manifold 320, and acarrier gas manifold 330.
Thegas mixing cavity 310 is a main body part of thegas mixing mechanism 300, thegas mixing cavity 310 has a mixed flowinner cavity 311, and afirst gas inlet 312, asecond gas inlet 313 and agas outlet 314 which are communicated with the mixed flowinner cavity 311, thefirst gas inlet 312 and thesecond gas inlet 313 are located at a first end of thegas mixing cavity 310, and thegas outlet 314 is located at a second end of the gas mixing cavity. The mixedflow cavity 311 provides a mixing space for the dopant gas and the carrier gas to form a mixed gas within the mixedflow cavity 311. The first andsecond gas inlets gas mixing chamber 310, and thegas outlet 314 is a gas outlet channel of thegas mixing chamber 310.
In the embodiment of the present application, the shape of thegas mixing cavity 310 may be various types, such as a straight tubular shape (as shown in fig. 1), a U-shaped tubular shape, an S-shaped tubular shape, and the like, and the embodiment of the present application is not particularly limited thereto.
Thedopant gas manifold 320 is in communication with thefirst gas inlet 312 and thecarrier gas manifold 330 is in communication with thesecond gas inlet 313. The dopinggas branch pipe 320 is used for conveying doping gas and is introduced into the mixed flowinner cavity 311 through a first inlet gas, and the carryinggas branch pipe 330 is used for conveying carrying gas and is introduced into the mixed flow small cavity through asecond inlet 313.
A first preset included angle is formed between the axis of thefirst gas inlet 312 and the axis of thesecond gas inlet 313, so that the doping gas introduced through thefirst gas inlet 312 and the carrier gas introduced through thesecond gas inlet 313 form a mixed gas in a manner of rotating around a first direction, the mixed gas flows from the first end to the second end, and the first direction is the direction from the first end to the second end.
Under such a structural layout, as shown in fig. 3, the flows of the dopant gas and the carrier gas introduced into the mixedflow cavity 311 also form a first preset included angle, so that no matter the dopant gas and the carrier gas are directly converged, or the dopant gas and the carrier gas are guided by the cavity wall of the mixedflow cavity 311 and then converged, one of the dopant gas and the carrier gas always has an acting force for pushing the other, so that the dopant gas and the carrier gas form a rotating mixed gas at the converging point. As shown in fig. 4, since the dopant gas and the carrier gas are introduced from the first end of thegas mixing chamber 310, they are mixed and then transported toward the second end of thegas mixing chamber 310, so that the mixture gas rotates around the first direction.
It should be understood that the mixed gas of the embodiments of the present application may be delivered in a substantially spiral shape, but may be a gas flow rotating around the first direction and delivered in an irregular shape.
Compared with the mode that the mixed gas is directly conveyed along the first direction, the mixed gas in the embodiment of the application rotates around the first direction to be conveyed, and because the mixed gas in the mixed flowinner cavity 311 is conveyed from the first end to the second end, under the condition that the conveying distance is consistent, the mixed gas conveyed in a rotating mode has a longer stroke when conveyed in the mixed flowinner cavity 311, so that the doped gas and the carried gas have longer mixing time undoubtedly, and further the mixing uniformity of the doped gas and the carried gas is improved.
Meanwhile, after the mixed gas rotating around the first direction is formed by the doping gas and the carrying gas, the mixed gas collides with the cavity wall of the mixed flowinner cavity 311 for many times based on the rotating track of the mixed gas, and the doping gas and the carrying gas in the mixed gas are continuously mixed in an opposite impact manner in the collision process, so that the mixing effect is continuously enhanced, and the mixing uniformity is improved; and, the mixed gas is because of receiving the guide effect of chamber wall after colliding with the chamber wall of mixed flowinner chamber 311 again, its rotation trend can further strengthen, and then increased the rotation stroke that the mixed gas carried in mixed flowinner chamber 311, also can strengthen like this and mix the homogeneity.
In the present embodiment, the flow state of the dopant gas into the mixedflow cavity 311 is determined by the axis of thefirst gas inlet 312, and the flow state of the carrier gas into themixed flow cavity 311 is determined by the axis of thesecond gas inlet 313. The arrangement of the axis of thefirst gas inlet 312 and the axis of thesecond gas inlet 313 of the embodiment of the present invention is variously disposed, and in a specific embodiment, as shown in fig. 1 to 3, the axis of thefirst gas inlet 312 and the axis of thesecond gas inlet 313 of the embodiment of the present invention may be located on the same cross section of thegas mixing cavity 310, and the first preset included angle may be 90 °.
Under the arrangement, the doping gas introduced into the mixed flowinner cavity 311 from thefirst gas inlet 312 and the carrying gas introduced into the mixed flowinner cavity 311 from thesecond gas inlet 313 are also positioned on the same plane, so that the two gases can be converged at the first time, and the doping gas and the carrying gas are flushed in the process of converging, so that the mixing is realized; because the doped gas and the carried gas do not collide with the cavity wall of the mixed flowinner cavity 311 for guiding and then converge, the kinetic energy of the doped gas and the carried gas is at the maximum value, so that the doped gas and the carried gas collide with each other more violently when in hedging, the mixing of the inner molecules is more sufficient, and the mixing uniformity of the doped gas and the carried gas is further promoted.
The first preset included angle is 90 degrees, so that the doping gas and the carrying gas can form a rotating mixed gas; meanwhile, with such an arrangement, in order to cooperate with thefirst air inlet 312 and thesecond air inlet 313, the external pipelines are also generally arranged in a perpendicular manner, so that the structural layout of the pipelines is more regular, thereby improving the structural compactness and facilitating the processing.
Of course, in other embodiments, the axis offirst air inlet 312 and the axis ofsecond air inlet 313 may be on different cross-sections; the first predetermined included angle may also be other values, such as 60 °, 75 °, 110 °, and the like.
In order to facilitate the transportation of the doping gas and the carrier gas during mixing, as shown in fig. 4, the mixed flowinner cavity 311 of the embodiment of the present application may be a cylindrical inner cavity, and the cylindrical inner cavity may provide a better transportation environment. Of course, themixed flow cavity 311 may be a triangular prism cavity, a square cavity, or the like.
Further, the central axis of the cylindrical inner cavity of the embodiments of the present application may be parallel to the first direction. It should be understood that, although the mixed gas rotates around the first direction, the mixed gas is transported along the first direction as a whole, and with such a configuration, the mixed gas is transported along a direction parallel to the central axis of the cylindrical cavity as a whole, which is beneficial to smoothly transporting the mixed gas from the first end to the second end of themixed flow cavity 311, and further smoothly sending out the mixed gas from thegas mixing cavity 310 on the premise that the doping gas and the carrier gas are mixed more uniformly.
As can be seen from the above description, in thegas mixing mechanism 300 disclosed in the embodiment of the present application, the axis of thefirst gas inlet 312 and the axis of thesecond gas inlet 313 form a first predetermined included angle, so that the dopant gas introduced through thefirst gas inlet 312 and the carrier gas introduced through thesecond gas inlet 313 form a mixed gas in a manner of rotating around a first direction, and the mixed gas flows from the first end to the second end, where the first direction is a direction from the first end to the second end.
Therefore, thegas mixing mechanism 300 of the embodiment of the application can rotate and mix the doping gas and the carrying gas, and when the mixing gas is conveyed in the mixing cavity in a rotating manner, the conveying stroke of the mixing gas is increased, so that the mixing time is increased, and the mixing uniformity of the doping gas and the carrying gas can be improved undoubtedly; meanwhile, the mixed gas continuously collides with the cavity wall of the mixing inner cavity in the rotating and conveying process, so that the intensity of the hedging mixing of the doping gas and the carrying gas is increased, and the mixing uniformity of the doping gas and the carrying gas is further improved.
As shown in fig. 1 to 3, in order to adapt to the structure of thefirst gas inlet 312 to match the conveying characteristics of thefirst gas inlet 312, the dopantgas branch pipe 320 according to the embodiment of the present invention may include afirst pipe section 321 extending in the same direction as the penetrating direction of thefirst gas inlet 312, and thefirst pipe section 321 is communicated with thefirst gas inlet 312. Therefore, the extending direction of the axis of thefirst pipe section 321 is consistent with the extending direction of the axis of thefirst gas inlet 312, so that the collision of the doping gas in the introducing process can be reduced, the doping gas is ensured to have certain kinetic energy, and the doping gas is more conveniently introduced into the mixed flowinner cavity 311 along the axis direction of thefirst gas inlet 312.
Meanwhile, the flow area of thefirst pipe section 321 of the embodiment of the present application may be larger than the flow area of thefirst inlet port 312. Under the structure layout, thefirst gas inlet 312 is equivalent to form a necking structure at the tail end of thefirst pipe section 321, when the doping gas is introduced into thefirst gas inlet 312 from the tail end of thefirst pipe section 321, due to the reduction of the flow area, the doping gas with the same volume is compressed, so that the flow speed is obviously accelerated, and the gas flow state of the doping gas is equivalent to be changed into a jet flow state, so that the kinetic energy of the gas flow of the doping gas is improved, the doping gas can generate stronger hedging with the cavity wall of the carrying gas and the mixed flowinner cavity 311 in the mixed flowinner cavity 311, and the mixing uniformity is effectively improved.
Furthermore, thefirst pipe segment 321 and thefirst inlet 312 may be offset, and thefirst inlet 312 is disposed adjacent to the pipe wall of thefirst pipe segment 321 on the side close to thesecond inlet 313. It should be understood that thefirst pipe segment 321 and thefirst gas inlet 312 are arranged coaxially, that is, the axis of thefirst pipe segment 321 is not collinear with the axis of thefirst gas inlet 312, and since thefirst gas inlet 312 is arranged closer to one side of thesecond gas inlet 313, when the doping gas is introduced from thefirst gas inlet 312 into the mixed flowinner cavity 311, the doping gas forms an accelerated gas flow closer to thesecond gas inlet 313, so that the doping gas and the carrier gas can be more easily collided.
Of course, thedopant gas manifold 320 of the embodiments of the present application may also include other pipe segments with which thefirst pipe segment 321 cooperates to change the interface layout of thedopant gas manifold 320.
As shown in fig. 1 to 3, in order to adapt to the structure of thesecond gas inlet 313 to match the conveying characteristics of thesecond gas inlet 313, the carriergas branch pipe 330 according to the embodiment of the present invention may include asecond pipe section 331 extending in the same direction as the penetrating direction of thesecond gas inlet 313, and thesecond pipe section 331 communicates with thesecond gas inlet 313. Therefore, the extending direction of the axis of thesecond pipe section 331 is consistent with the extending direction of the axis of thesecond air inlet 313, the collision of the carried gas in the introducing process can be reduced, the carried gas is ensured to have certain kinetic energy, and the carried gas is more convenient to be introduced into the mixed flowinner cavity 311 along the axis direction of thesecond air inlet 313.
Meanwhile, the flow area of thesecond tube section 331 of the embodiment of the present application may be larger than the flow area of thesecond gas inlet 313. Under this kind of structural configuration,second air inlet 313 is equivalent to and forms throat form structure at the end ofsecond tube section 331, in the process that the carrier gas lets in tosecond air inlet 313 from the end ofsecond tube section 331, because the reduction of flow area, can lead to the carrier gas of equal volume to be compressed and make the velocity of flow obviously accelerate, be equivalent to making the gas flow state of carrier gas become the efflux state, under this condition, the kinetic energy of the gas flow of carrier gas is promoted, it can produce stronger clashing with the chamber wall of doping gas and mixed flowinner chamber 311 in mixed flowinner chamber 311, and then effectively promote the mixing homogeneity.
Furthermore, thesecond pipe section 331 and thesecond air inlet 313 may be offset, and thesecond air inlet 313 is disposed proximate to the pipe wall of thesecond pipe section 331 on the side far from thefirst air inlet 312. It should be understood that thesecond pipe section 331 and thesecond gas inlet 313 are arranged coaxially, that is, the axis of thesecond pipe section 331 is not collinear with the axis of thesecond gas inlet 313, and since thesecond gas inlet 313 is arranged at a side farther from thefirst gas inlet 312, when the carrier gas is introduced from thesecond gas inlet 313 into the mixed flowinner cavity 311, the carrier gas forms an accelerated gas flow farther from thefirst gas inlet 312, and is more convenient for forming a rotating mixed gas under the action of the counter-impact of the carrier gas and the dopant gas.
Based on the embodiment that the carriergas branch pipe 330 includes thesecond pipe segment 331, the carriergas branch pipe 330 of the embodiment of the present application may further include athird pipe segment 332, thesecond pipe segment 331 is connected between thethird pipe segment 332 and thesecond gas inlet 313, and a second predetermined included angle is formed between thesecond pipe segment 331 and thethird pipe segment 332. With such a configuration, the carryinggas branch pipe 330 is bent, so that the carryinggas branch pipe 330 can adapt to more structural layout environments by adjusting the extending direction of thethird pipe segment 332, that is, the orientation of thethird pipe segment 332 is different and is adapted to the conveying pipelines of the carrying gas sources in different directions.
Meanwhile, the carriergas branch pipe 330 is easier to be arranged longer than the dopantgas branch pipe 320, so that the conveying path of the dopant gas is shorter, the dopant gas can be ensured to be introduced into the mixed flowinner cavity 311 in one step, and the situation that the mixed flowinner cavity 311 is filled with the carrier gas and the dopant gas cannot be introduced can be avoided. It should be noted that, because the amount of the doping gas is small, the gas pressure during transportation is low, and the gas pressure of the carrier gas is high, even if the doping gas and the carrier gas are introduced into the mixed flowinner cavity 311, the doping gas is extruded by the carrier gas, and the problem that the mixed gas cannot be generated occurs. In the present embodiment, the above-mentioned problems can be solved by adaptively setting the length dimensions of thedoping gas manifold 320 and thecarrier gas manifold 330.
In the embodiment of the present application, specific values of the second preset included angle are not limited, as shown in fig. 2, the second preset included angle may be 90 °, so that thesecond pipe section 331 and thethird pipe section 332 are perpendicular to each other, and the overall shape of the gas carryingbranch pipe 330 is more regular, which is beneficial to optimizing the structural layout and improving the structural compactness. Of course, the second predetermined included angle may also be 45 °, 70 °, 110 °, etc.
As shown in fig. 1 and 4, in order to facilitate outputting the mixed gas, thegas mixing mechanism 300 of the embodiment of the present application may further include a gasoutlet branch pipe 340, where the gasoutlet branch pipe 340 includes afourth pipe segment 341 extending in a direction consistent with a penetrating direction of thegas outlet 314, and thefourth pipe segment 341 is communicated with thegas outlet 314. Under such setting, the extending direction of the axis of thefourth pipe section 341 is consistent with the extending direction of the axis of thegas outlet 314, and the fourth pipe section can be matched with the conveying characteristics of thegas outlet 314, so as to reduce the collision of the mixed gas in the output process, so as to ensure that the mixed gas has certain kinetic energy, and further realize smooth output from thegas mixing cavity 310.
Meanwhile, the flow area of thefourth pipe section 341 is larger than the flow area of theair outlet 314. Under such a configuration, thegas outlet 314 is equivalent to a necking structure formed between the mixed flowinner cavity 311 and thefourth pipe section 341, and when the mixed gas is transported from the mixed flowinner cavity 311 to thefourth pipe section 341, the mixed gas with the same volume is compressed in thegas outlet 314, so that the mixed gas is introduced into thefourth pipe section 341 in a jet flow state. In the process of compressing the mixed gas, the molecular motion of the doped gas and the carried gas in the mixed gas is intensified, so that the mixing effect is further enhanced, and the mixing uniformity is optimized.
Thefourth pipe section 341 is arranged coaxially with thegas outlet 314, that is, the axis of thefourth pipe section 341 is collinear with the axis of thegas outlet 314, so that the mixed gas can be introduced into the central region of thefourth pipe section 341, and the distribution uniformity of the mixed gas in thefourth pipe section 341 is further optimized.
Of course, the specific configuration of theoutlet branch 340 is not limited in the embodiments of the present application, and it may also include other pipe segments besides thefourth pipe segment 341, and thefourth pipe segment 341 cooperates with these pipe segments to change the structural layout of theoutlet branch 340.
In the related art, after thegas mixing mechanism 300 outputs the mixed gas, the mixed gas is introduced into the process chamber of the semiconductor processing equipment through the gas inlet pipe, so as to introduce the mixed gas into the process chamber, so that a specific process environment is formed in the process chamber.
Since the flow rate of the mixed gas is controlled by the associated valve (e.g., a butterfly valve, etc.) and the flow rate is controlled by the associated fluid driving device (e.g., a vacuum pump, etc.) before the mixed gas is introduced into the process chamber, it is ensured that the rear-end gas pressure in the gas inlet pipeline is stable, in this case, if the supply fluctuation occurs at the plant end, the gas pressure fluctuation at the front end of the gas inlet pipeline is caused, specifically, the gas pressure fluctuation occurs at thegas outlet 314 of thegas mixing mechanism 300, which causes the fluctuation of the concentration and the flow rate in the gas inlet pipeline, and thus, the process quality is influenced.
Based on this, the embodiment of the present application further provides an air inlet pipeline structure of semiconductor processing equipment, which is used for introducing a process gas into a process chamber of the semiconductor processing equipment, where the process gas is equal to a mixed gas. As shown in fig. 5 and 6, the intake pipe structure of the embodiment of the present application may include a plurality of gas source pipes, agas mixing mechanism 300, a plurality of intake pipes, and apressure control pipe 600.
Wherein: the plurality of gas source pipelines are communicated with the plurality of gas inlets of thegas mixing mechanism 300 in a one-to-one correspondence manner and are used for introducing different process gases into thegas mixing mechanism 300; thegas mixing mechanism 300 is used for mixing different process gases to form a mixed gas; one end of each of the plurality of gas inlet pipes is communicated with thegas outlet 314 of thegas mixing mechanism 300, and the other end of each of the plurality of gas inlet pipes is communicated with the process chamber, so that the mixed gas is introduced into the process chamber. The process gas can also be a dopant gas and/or a carrier gas, i.e. a gas before the mixing process.
In the embodiment of the present application, one end of thepressure control pipeline 600 is communicated with thegas outlet 314 of thegas mixing mechanism 300, and the other end is communicated with the exhaust unit VENT of the semiconductor processing equipment, and is used for exhausting part of the mixed gas, and thepressure control pipeline 600 is provided with a pressure controller EPC005 for controlling the flow rate of the mixed gas exhausted by thepressure control pipeline 600, so as to keep the flow rate in the plurality of gas inlet pipelines stable.
It should be understood that the front-end air pressures of the plurality of air inlet pipelines can be characterized by the air pressure at theair outlet 314 of theair mixing mechanism 300, and when the air pressure at theair outlet 314 fluctuates, the flow rate in thepressure control pipeline 600 can be adjusted by the pressure controller EPC005, so as to adjust the flow rate in the air inlet pipeline to achieve the effect of flow stabilization. Since the EPC005 has a closed-loop detection control function, it can detect the air pressure at theair outlet 314 and adaptively adjust the flow rate in thepressure control pipeline 600 according to the detected air pressure data.
In the embodiment of the present application, the Pressure controller EPC005 is of various types, and may be other types of Pressure controllers such as an Electronic Pressure regulator, a Pressure vacuum controller, and the like, in addition to the Electronic Pressure Controllers (EPC) shown in fig. 5 and 6.
During a specific operation, a preset air pressure needs to be preset for the pressure controller EPC005, and the preset air pressure matches with the air pressure at theair outlet 314. When the air pressure of theair outlet 314 is greater than the preset air pressure, the flow and the concentration of the mixed gas introduced into the air inlet pipeline from theair outlet 314 are both increased, at this time, the pressure controller EPC005 automatically adjusts the flow in thepressure control pipeline 600 according to the detection result, specifically, the flow is adjusted by increasing the opening of the flow control valve inside the pressure controller EPC005, and in this case, the mixed gas discharged through thepressure control pipeline 600 is increased, so that the flow of the mixed gas introduced into the air inlet pipeline from theair outlet 314 can be effectively reduced, and the concentration of the mixed gas entering the process chamber is further reduced.
When the air pressure of theair outlet 314 is smaller than the preset air pressure, the flow and the concentration of the mixed gas introduced into the air inlet pipeline from theair outlet 314 are both reduced, at this time, the flow in thepressure control pipeline 600 is automatically adjusted to be small by the pressure controller EPC005 according to the detection result, specifically, the opening degree of the flow control valve inside the pressure controller EPC005 is adjusted to be small, in this case, the mixed gas discharged through thepressure control pipeline 600 is reduced, the flow of the mixed gas introduced into the air inlet pipeline from theair outlet 314 can be effectively increased, and further, the concentration of the mixed gas entering the process chamber is also improved.
From the above, the gas pipeline structure of the embodiment of the present application can adaptively adjust the flow rate and the concentration of the mixed gas in the gas inlet pipeline to cope with the supply fluctuation of the plant service end, so as to ensure that the semiconductor process equipment realizes better process quality.
Specifically, as shown in fig. 6, the plurality of gas source pipelines of the embodiment of the present application include a firstgas source pipeline 100 and a secondgas source pipeline 200, and thegas mixing mechanism 300 is thegas mixing mechanism 300 in any one of the foregoing schemes, so that the gas pipeline structure has the beneficial effects of any one of the foregoing schemes, which is not described herein again.
The firstgas source pipeline 100 is connected between the doping gas source and the dopinggas branch pipe 320, the secondgas source pipeline 200 is connected between the carrying gas source and the carryinggas branch pipe 330, the firstgas source pipeline 100 is provided with a first flow controller MFC001, and the second gas source pipeline is provided with a second flow controller MFC 002. Under the structural layout, the firstgas source pipeline 100 is used for conveying doping gas, the first flow controller MFC001 can preset a first preset flow, and the first flow controller MFC001 can perform closed-loop detection and adjustment on the flow on the firstgas source pipeline 100 to approach the first preset flow; the secondgas source pipeline 200 is used for conveying the carrier gas, the second flow controller MFC002 can preset a second preset flow, and the second flow controller MFC002 can perform closed-loop detection to regulate the flow on the secondgas source pipeline 200 to tend to the second preset flow.
In an alternative, the distance between the first flow controller MFC001 and thefirst air inlet 312 in the embodiment of the present application may be smaller than a preset threshold. In combination with the above, since the amount of the doping gas is small, the gas pressure is low during the transportation process, and the gas pressure of the carrier gas is high, even if the doping gas and the carrier gas are introduced into the mixed flowinner cavity 311, the doping gas can be extruded by the carrier gas; in this embodiment, the distance between the first flow controller MFC001 and thefirst gas inlet 312 is set within the preset threshold, so as to ensure that the doping gas with lower gas pressure can be smoothly introduced into the mixed flowinner cavity 311 through a shorter pipeline after being adjusted by the first flow controller MFC 001.
Specifically, as shown in fig. 5 and 6, the distance between the first flow controller MFC001 and thefirst gas inlet 312 of the embodiment of the present application is a first distance, and the distance between the second flow controller MFC002 and thesecond gas inlet 313 is a second distance, and the first distance is smaller than the second distance. Under the structural layout, after being adjusted by the first mass flow controller MFC001, the doping gas is introduced into the mixed flowinner cavity 311 through a short pipeline, and after being adjusted by the second mass flow controller MFC002, the carrying gas is introduced into the mixed flowinner cavity 311 through a long pipeline, which undoubtedly can be beneficial to the doping gas to be introduced into the mixed flowinner cavity 311 before the carrying gas.
In view of the foregoing, in the gas pipeline structure of the embodiment of the present application, in order to ensure that the dopant gas with a lower gas pressure can be smoothly introduced into the mixed flowinner cavity 311, a conveying sequence of the dopant gas and the carrier gas needs to be set, and this causes a problem that the carrier gas cannot be introduced into the mixed flowinner cavity 311 due to the fact that the mixed flowinner cavity 311 is filled with the dopant gas after the dopant gas is firstly introduced into the mixed flowinner cavity 311, and even the dopant gas flows back to the secondgas source pipeline 200 to pollute the carrier gas source. Based on this, as shown in fig. 6, a check valve CV001 may be further disposed on the secondgas source pipeline 200 according to the embodiment of the present invention, and the check valve CV001 is located between the second flow controller MFC002 and the carryinggas branch pipe 330, so that the check valve CV001 may place a gas backflow inside the pipeline on the secondgas source pipeline 200, and not only can ensure that the carrying gas is smoothly squeezed into the mixed flowinner cavity 311 after accumulating to a certain amount, but also can prevent the doping gas in the mixed flowinner cavity 311 from flowing backward to the secondgas source pipeline 200.
In the embodiment of the present application, the gas pipeline structure may further include a third gas source pipeline, a fourth gas source pipeline, and the like, which may be adaptively configured according to the composition of the mixed gas.
In an alternative, as shown in fig. 6, the plurality of air inlet lines of the embodiments of the present application may include a firstair inlet line 400 and a secondair inlet line 500, the process chamber having a central air inlet channel RUN1 and an edge air inlet channel RUN2, wherein: a firstgas inlet line 400 is connected between thegas outlet 314 and the central gas inlet channel RUN1 for delivering a gas mixture to the central region of the process chamber; the firstair inlet pipeline 400 is provided with a third flow controller MFC 003; a secondgas inlet line 500 is connected between thegas outlet 314 and the edge gas inlet channel RUN2 for delivering the mixed gas to the edge region of the process chamber; a fourth mass flow controller MFC004 is provided on thesecond inlet line 500.
It should be understood that the third flow controller MFC003 can preset a third preset flow, and the third flow controller MFC003 can perform closed-loop detection to adjust the flow on thefirst intake conduit 400 toward the third preset flow; the fourth mass flow controller MFC004 can preset a fourth preset flow rate, and the fourth mass flow controller MFC004 can perform closed-loop detection to regulate the flow rate on thesecond intake pipe 500 to the fourth preset flow rate. Therefore, in the gas pipeline structure of the embodiment of the present application, the third flow controller MFC003 can be arranged to control and adjust the flow rate of the mixed gas flowing into the central gas inlet channel RUN1, and the fourth flow controller MFC004 can be arranged to control and adjust the flow rate of the mixed gas flowing into the edge gas inlet channel RUN2, so that when the third flow controller MFC and the fourth flow controller MFC are used in combination, the mixed gas distributed in the central region and the edge region in the process chamber can be adjusted, so as to form a specific process environment in the process chamber.
Of course, other gas inlet passages (e.g., top gas inlet passage, bottom gas inlet passage, etc.) may be provided in the process chamber, and the gas line mechanism of the embodiment of the present invention may further include other gas inlet lines adapted to the gas inlet passages.
Under the structural layout, when the supply fluctuation occurs at the plant end, the EPC005 of the embodiment of the present application can pre-adjust the flow rates on the firstair intake pipeline 400 and the secondair intake pipeline 500, so as to avoid the flow rates on the firstair intake pipeline 400 and the secondair intake pipeline 500 from greatly fluctuating; that is to say, after the adjustment by the pressure controller EPC005, the flow fluctuation degrees of thefirst intake pipe 400 and thesecond intake pipe 500 are adjusted down greatly, and are adjusted down to the adjustable ranges of the third flow controller MFC003 and the fourth flow controller MFC004, so that the problem that the third flow controller MFC003 and the fourth flow controller MFC004 cannot be adjusted and controlled effectively due to the large fluctuation can be avoided.
Meanwhile, the third flow controller MFC003 on thefirst intake pipe 400 can adjust the flow thereon for the second time, and further regulate and control the flow fluctuation on thefirst intake pipe 400 to ensure that the flow on thefirst intake pipe 400 tends to be stable; the fourth mass flow controller MFC004 on thesecond intake conduit 500 can regulate the flow thereon for the second time, and further regulate and control the flow fluctuation on thesecond intake conduit 500 to ensure that the flow on thesecond intake conduit 500 tends to be stable.
Therefore, the gas pipeline structure provided by the embodiment of the application has the function of implementing dual regulation and control on the flow stability in the gas inlet pipeline, so that the flow of the gas inlet pipeline can be effectively ensured to be always kept in a stable state, and the concentration of mixed gas introduced into the process chamber is ensured to be within a preset range.
In an alternative, the pressure controller EPC005 has a preset gas pressure, and the pressure controller EPC005 is configured to, when the actual gas pressure at thegas outlet 314 is different from the preset gas pressure, bring the actual gas pressure toward the preset gas pressure by adjusting the flow rate of the mixed gas discharged from thepressure control line 600, so as to previously adjust the flow rates of thefirst intake line 400 and thesecond intake line 500.
In conjunction with the foregoing, the pressure controller EPC005 is capable of detecting the air pressure at theair outlet 314 and adjusting the air pressure at theair outlet 314 to match a preset air pressure. When the air pressure of theair outlet 314 is greater than the preset air pressure, the flow rate of the mixed gas from theair outlet 314 to the firstair inlet pipeline 400 and the secondair inlet pipeline 500 is increased, and at this time, the pressure controller EPC005 controls thepressure control pipeline 600 in a closed-loop manner to increase the displacement of the mixed gas, so that the flow rate of the mixed gas from theair outlet 314 to the firstair inlet pipeline 400 and the secondair inlet pipeline 500 is reduced, so that the air pressure of theair outlet 314 gradually decreases to the preset air pressure, and the flow rate of the mixed gas in the firstair inlet pipeline 400 and the secondair inlet pipeline 500 tends to be stable.
When the air pressure at theair outlet 314 is smaller than the preset air pressure, the flow rate of the mixed gas from theair outlet 314 to the firstair inlet pipeline 400 and the secondair inlet pipeline 500 is reduced, and at this time, the pressure controller EPC005 controls thepressure control pipeline 600 in a closed-loop manner to reduce the displacement of the mixed gas, so that the flow rate of the mixed gas from theair outlet 314 to the firstair inlet pipeline 400 and the secondair inlet pipeline 500 is increased, so that the air pressure at theair outlet 314 gradually rises to the preset air pressure, and the flow rate of the mixed gas in the firstair inlet pipeline 400 and the secondair inlet pipeline 500 tends to be stable.
In the embodiment of the present application, the first Flow Controller MFC001, the second Flow Controller MFC002, the third Flow Controller MFC003, and the fourth Flow Controller MFC004 may be selected as Mass Flow Controllers (MFCs), but they may be other Flow controllers.
In an alternative scheme, as shown in fig. 6, a first control valve V031 is further disposed on the first intake pipe 400 according to the embodiment of the present application, where the first control valve V031 is connected between the third flow controller MFC003 and the central intake passage RUN1, and the first control valve V031 is configured to control on/off of the first intake pipe 400; the second air inlet pipeline 500 is further provided with a second control valve V041, the second control valve V041 is connected between the fourth mass flow controller MFC004 and the edge air inlet channel RUN2, and the second control valve V041 is used for controlling the on-off of the second air inlet pipeline 500; the air inlet pipeline structure further comprises a first exhaust pipeline 700 and a second exhaust pipeline 800, one end of the first exhaust pipeline 700 is connected between the third flow controller MFC003 and the first control valve V031, the other end of the first exhaust pipeline 700 is connected with the exhaust VENT, a third control valve V032 is arranged on the first exhaust pipeline 700, and the third control valve V032 is used for controlling the on-off of the first exhaust pipeline 700; one end of the second exhaust pipeline 800 is connected between the fourth flow controller MFC004 and the second control valve V041, the other end of the second exhaust pipeline 800 is connected with the exhaust unit VENT, a fourth control valve V042 is arranged on the second exhaust pipeline 800, and the fourth control valve V042 is used for controlling the on-off of the second exhaust pipeline 800.
Specifically, with this arrangement, the flow rates of the first andsecond intake pipes second intake pipes air intake pipeline 400 is delivered to the exhaust unit VENT through thefirst exhaust pipeline 700, the mixed gas in the secondair intake pipeline 500 is delivered to the exhaust unit VENT through thesecond exhaust pipeline 800, after the mixed gas is delivered in the gas pipeline structure for a period of time, the pressure controller EPC005, the third flow controller MFC003, and the fourth flow controller 004 cooperate to regulate the flow rates of the mixed gas in the firstair intake pipeline 400 and the secondair intake pipeline 500 to a preset value, and then, the operator may close the third control valve V032 and the fourth control valve V042, open the first control valve V031 and the second control valve V041, and the mixed gas in the firstair intake pipeline 400 and the secondair intake pipeline 500 may be introduced into the process chamber at a preset flow rate, this is advantageous to ensure process quality.
A fifth control valve V051 may also be disposed on thepressure control pipeline 600, and the fifth control valve V051 is used for controlling the on-off of thepressure control pipeline 600.
Based on the gas pipeline structure, an embodiment of the present application further provides a semiconductor process apparatus, which includes a process chamber and the gas inlet pipeline structure in any of the foregoing schemes, so that the semiconductor process apparatus has the beneficial effects of any of the foregoing schemes, and details are not repeated herein.
In the embodiment of the present application, the type of the semiconductor process apparatus is not limited, and may be a deposition apparatus, a photolithography apparatus, a cleaning apparatus, or the like.
In the embodiments of the present application, the difference between the embodiments is described in detail, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (15)
1. The gas mixing mechanism of the semiconductor process equipment is characterized by comprising a gas mixing cavity, a doped gas branch pipe and a carried gas branch pipe, wherein:
the gas mixing cavity is provided with a mixed flow inner cavity, and a first gas inlet, a second gas inlet and a gas outlet which are communicated with the mixed flow inner cavity, the first gas inlet and the second gas inlet are positioned at the first end of the gas mixing cavity, and the gas outlet is positioned at the second end of the gas mixing cavity;
the dopant gas branch pipe with first air inlet intercommunication, the carrier gas branch pipe with the second air inlet intercommunication, the axis of first air inlet with be first preset contained angle between the axis of second air inlet, so that pass through the dopant gas that first air inlet lets in with pass through the carrier gas that the second air inlet lets in forms mist in order to surround first direction pivoted mode, just mist certainly first end flow direction the second end, first direction does first end extremely the direction of second end.
2. The gas mixing mechanism of claim 1, wherein the dopant gas manifold includes a first tube segment extending in a direction consistent with a direction of penetration of the first gas inlet, the first tube segment being in communication with the first gas inlet, and a flow area of the first tube segment being greater than a flow area of the first gas inlet, the first tube segment being offset from the first gas inlet, the first gas inlet being disposed proximate to a wall of the first tube segment on a side thereof proximate to the second gas inlet.
3. The gas mixing mechanism according to claim 1 or 2, wherein the gas carrying branch pipe comprises a second pipe section extending in the same direction as the second gas inlet, the second pipe section is communicated with the second gas inlet, the flow area of the second pipe section is larger than that of the second gas inlet, the second pipe section is offset from the second gas inlet, and the second gas inlet is arranged close to the pipe wall of the second pipe section on the side away from the first gas inlet.
4. The gas mixing mechanism of claim 3, wherein the carrier gas manifold further comprises a third pipe segment, the second pipe segment is connected between the third pipe segment and the second gas inlet, and the second pipe segment and the third pipe segment form a second predetermined included angle.
5. The gas mixing mechanism of claim 1, further comprising a gas outlet branch pipe, wherein the gas outlet branch pipe comprises a fourth pipe section, the extending direction of the fourth pipe section is consistent with the penetrating direction of the gas outlet, the fourth pipe section is communicated with the gas outlet, the flow area of the fourth pipe section is larger than that of the gas outlet, and the fourth pipe section and the gas outlet are coaxially arranged.
6. The gas mixing mechanism of claim 1, wherein the axis of the first gas inlet and the axis of the second gas inlet are located on the same cross section of the gas mixing chamber, and the first predetermined included angle is 90 °.
7. The gas mixing mechanism of claim 1, wherein the flow mixing lumen is a cylindrical lumen having a central axis parallel to the first direction.
8. An air inlet pipeline structure of semiconductor processing equipment is used for introducing process gas into a process chamber of the semiconductor processing equipment, and is characterized in that the air inlet pipeline structure comprises a plurality of gas source pipelines, a gas mixing mechanism, a plurality of air inlet pipelines and a pressure control pipeline, wherein:
the gas source pipelines are communicated with the gas inlets of the gas mixing mechanism in a one-to-one correspondence manner and are used for introducing different process gases into the gas mixing mechanism;
the gas mixing mechanism is used for mixing the different process gases to form mixed gas;
one ends of the plurality of air inlet pipelines are communicated with the air outlet of the gas mixing mechanism, and the other ends of the plurality of air inlet pipelines are communicated with the process chamber and are used for introducing the mixed gas into the process chamber;
one end of the pressure control pipeline is communicated with the gas outlet of the gas mixing mechanism, the other end of the pressure control pipeline is communicated with the exhaust device of the semiconductor processing equipment and used for exhausting part of the mixed gas, and the pressure controller is arranged on the pressure control pipeline and used for controlling the flow rate of the mixed gas exhausted by the pressure control pipeline so as to keep the flow rate in the plurality of gas inlet pipelines stable.
9. The intake conduit structure of claim 8, wherein the plurality of gas source conduits includes a first gas source conduit and a second gas source conduit, and the gas mixing mechanism is the gas mixing mechanism of any one of claims 1-7, wherein:
the first gas source pipeline is connected between a doping gas source and the doping gas branch pipes, the second gas source pipeline is connected between a carrying gas source and the carrying gas branch pipes, a first flow controller is arranged on the first gas source pipeline, and a second flow controller is arranged on the second gas source pipeline.
10. The intake conduit structure of claim 9, wherein a distance between the first flow controller and the first intake port is less than a preset threshold.
11. The intake pipe structure according to claim 9, wherein a check valve is further provided on the second gas source pipe, and the check valve is located between the second flow controller and the carrier gas branch pipe.
12. The air intake conduit structure of claim 9, wherein the plurality of air intake conduits comprises a first air intake conduit and a second air intake conduit, the process chamber having a central air intake passage and an edge air intake passage, wherein:
the first gas inlet pipeline is connected between the gas outlet and the central gas inlet channel and is used for conveying the mixed gas to the central area of the process chamber; a third flow controller is arranged on the first air inlet pipeline;
the second gas inlet pipeline is connected between the gas outlet and the edge gas inlet channel and is used for conveying the mixed gas to the edge area of the process chamber; and a fourth flow controller is arranged on the second air inlet pipeline.
13. The intake pipeline structure of claim 12, wherein a first control valve is further disposed on the first intake pipeline, the first control valve is connected between the third flow controller and the central intake passage, and the first control valve is configured to control on/off of the first intake pipeline;
the second air inlet pipeline is also provided with a second control valve, the second control valve is connected between the fourth flow controller and the edge air inlet channel, and the second control valve is used for controlling the on-off of the second air inlet pipeline;
the air inlet pipeline structure further comprises a first exhaust pipeline and a second exhaust pipeline, one end of the first exhaust pipeline is connected between the third flow controller and the first control valve, the other end of the first exhaust pipeline is connected with the exhaust device, a third control valve is arranged on the first exhaust pipeline, and the third control valve is used for controlling the on-off of the first exhaust pipeline;
one end of the second exhaust pipeline is connected between the fourth flow controller and the second control valve, the other end of the second exhaust pipeline is connected with the exhaust device, the second exhaust pipeline is provided with the fourth control valve, and the fourth control valve is used for controlling the on-off of the second exhaust pipeline.
14. The intake pipe structure according to claim 12, wherein the pressure controller has a preset gas pressure, and the pressure controller is configured to, when an actual gas pressure of the gas outlet is different from the preset gas pressure, bring the actual gas pressure toward the preset gas pressure by adjusting a flow rate of the mixed gas discharged from the pressure control line to previously adjust the flow rates of the first intake pipe and the second intake pipe.
15. A semiconductor processing apparatus comprising a process chamber and the air inlet conduit structure of any one of claims 8 to 14.
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| CN202110843282.1ACN113441023B (en) | 2021-07-26 | 2021-07-26 | Gas mixing mechanism, air inlet pipeline structure and semiconductor process equipment |
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| CN202110843282.1ACN113441023B (en) | 2021-07-26 | 2021-07-26 | Gas mixing mechanism, air inlet pipeline structure and semiconductor process equipment |
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| CN113441023B (en) | 2022-10-21 |
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