CN113436951A - Ion beam and radio frequency hybrid driven capacitively coupled plasma source - Google Patents
Ion beam and radio frequency hybrid driven capacitively coupled plasma sourceDownload PDFInfo
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- CN113436951A CN113436951ACN202110555800.XACN202110555800ACN113436951ACN 113436951 ACN113436951 ACN 113436951ACN 202110555800 ACN202110555800 ACN 202110555800ACN 113436951 ACN113436951 ACN 113436951A
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- ion beam
- polar plate
- capacitively coupled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- Electron Sources, Ion Sources (AREA)
Abstract
Translated fromChinese
Description
Technical Field
The invention relates to the technical field of plasma discharge, in particular to a capacitive coupling plasma source driven by mixing an ion beam and radio frequency.
Background
The low temperature plasma process has a very wide application in industrial production, and the common low temperature plasma source is generated by providing energy with electromagnetic waves, such as radio frequency capacitive coupled plasma (RF-CCP), Inductively Coupled Plasma (ICP), microwave discharge (ECR). Although the rf-driven capacitively coupled discharge has been studied and developed for a long time and is widely used in industrial production, its independent control of each parameter in the plasma has significant disadvantages
Disclosure of Invention
The invention aims to provide a plasma source driven by mixing an ion beam and radio frequency, and aims to solve the problems of low density, low ion flux, difficulty in independently modulating plasma parameters and the like in radio frequency capacitive coupling plasma.
The technical scheme adopted by the invention is as follows:
the capacitive coupling plasma source driven by the ion beam and the radio frequency in a mixed mode comprises a vacuum chamber, wherein an upper polar plate and a lower polar plate which are parallel and horizontally arranged are arranged in the vacuum chamber, the upper polar plate is a grid-shaped polar plate, and an ion beam source is arranged right above the upper polar plate;
the capacitive coupling plasma source also comprises a radio frequency power supply, and the output end of the radio frequency power supply is connected with the upper polar plate or the lower polar plate;
the vacuum chamber is also provided with an air inlet system, and the discharge gas is injected into the vacuum chamber through the air inlet system;
the upper polar plate and the lower polar plate are electrified to generate capacitively coupled plasma, and high-energy ions in the ion beam source are injected into the discharge region through the grid-shaped electrode plate and directly collide with each particle in the plasma in the discharge region to transfer energy.
And the radio frequency power supply outputs sinusoidal alternating current voltage according to the technical scheme.
According to the technical scheme, the frequency of the radio frequency power supply is lower than 30 MHz.
According to the technical scheme, the gap between the upper polar plate and the lower polar plate can be adjusted and is 1-10 cm.
In connection with the above technical solution, the capacitively coupled plasma source further comprises a vacuum pump set for pumping the exhaust gas and controlling the discharge pressure.
According to the technical scheme, the air inlet system is arranged on the side wall of the vacuum chamber and close to the top.
According to the technical scheme, the vacuum pump set is arranged at the center of the bottom of the vacuum chamber.
The invention also provides a method for generating the capacitive coupling plasma, which is based on the capacitive coupling plasma source driven by the ion beam and the radio frequency in a mixed mode in the technical scheme, and specifically comprises the following steps:
in a low-pressure closed environment of the vacuum chamber, the gas inlet system provides discharge gas with stable flow;
the radio frequency power supply drives and maintains the upper polar plate and the lower polar plate to discharge so as to generate capacitively coupled plasma;
injecting high-energy ion beams in the ion beam source into a plasma region from the grid-shaped upper polar plate;
the high-energy ion beam directly collides with each particle in the discharge area and transfers energy, so that the low-energy ion flux bombarded to the polar plate is increased, the plasma density is improved, the position of a plasma sheath layer is influenced, and the electron energy distribution is changed.
The invention has the following beneficial effects: the invention provides a plasma source driven by mixing an ion beam source and a radio frequency power supply to effectively solve the problem of independent regulation and control. Under the condition of radio frequency capacitive coupling discharge, high-density and high-energy ions provided by an ion beam source are injected into a discharge region through a grid-shaped upper plate hole and directly generate charge exchange, momentum collision and the like with each particle in the plasma, the density of the plasma can be improved at low air pressure, the electron energy distribution is influenced, and the ion flux and the energy distribution bombarded on the plate can be independently regulated and controlled by controlling the parameters such as injected ion energy and ion current. In addition, the injected high-energy ions influence the plasma sheath layer, the gamma mode in the discharge mode in the plasma is enhanced, and the method can be widely applied to the processes of plasma etching, cleaning, coating and the like.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a capacitively coupled plasma source driven by a combination of ion beam and RF.
In fig. 2, (a) is an electron density distribution; (b) is an electron energy distribution function; (c) the lower plate ion flux distribution; (d) the parameters are parameters under the conditions of radio frequency driven discharge, pure ion beam driven discharge and hybrid drive respectively for the ion energy probability distribution function of the lower-level plate.
In the figure: 1 is a vacuum chamber, 2 is an upper polar plate, 3 is a lower polar plate, 4 is a radio frequency power supply, 5 is an air inlet system, 6 is a vacuum pump set, and 7 is an ion beam source.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the capacitively coupled plasma source driven by a mixture of ion beam and rf according to the embodiment of the present invention includes avacuum chamber 1, anupper plate 2, alower plate 3, anrf power source 4, agas inlet system 5, and anion beam source 7. Thevacuum chamber 1 provides a closed environment under low pressure, the grid-shaped upperpolar plate 2 is fixed, the corresponding polar plate interval is set at the position of the adjustable lowerpolar plate 3, and thegas inlet system 5 provides discharge gas with stable flow. Therf power source 4 can drive and sustain a discharge and theion beam source 8 provides a high energy ion beam that is injected into the plasma region from the grid-like top plate 2. The middle of the two polar plates is a plasma area.
The upperpolar plate 2 and the lowerpolar plate 3 are parallel and horizontally placed in thevacuum chamber 1, and the upperpolar plate 2 is a grid-shaped polar plate; one end of the radiofrequency power supply 4 is grounded, and the output end is connected with the polar plate; theion beam source 7 is disposed right above the grid-shapedupper plate 2. The high-energy electrons provided by theion beam source 7 are incident to the discharge area through thegrid electrode 2 and react with the background gas input into thevacuum chamber 1 by thegas inlet system 5 to generate plasma.
In one embodiment of the invention, one end of the radiofrequency power supply 4 is grounded, the other end is connected to the upperpolar plate 2, and the lowerpolar plate 3 is grounded. In another embodiment, the radiofrequency power supply 4 is coupled and output through the radio frequency matching box, one end of the radio frequency power supply is grounded, the other end of the radio frequency power supply is connected to the lowerpolar plate 3, the upperpolar plate 2 is grounded, and the visible output end can be connected to the polar plate in a replaceable mode.
The capacitive coupling plasma source driven by the ion beam and the radio frequency in a mixed mode further comprises avacuum pump unit 6, a gas inlet system injects discharge gas with certain mass flow into thevacuum chamber 1 through agas inlet system 5, and exhaust gas is pumped out through thevacuum pump unit 6 to control discharge pressure.
In one embodiment of the present invention, thegas inlet system 5 and thevacuum pump unit 6 are disposed near the top and bottom center of the sidewall of thevacuum chamber 1, respectively. The housing of thevacuum chamber 1 can be treated grounded.
The radiofrequency power supply 4 outputs a sinusoidal alternating voltage with a frequency lower than 30 MHz.
Further, thegas inlet system 5 can maintain the discharge pressure between 10 mtorr and 1 torr by adjusting the discharge gap from 1 cm to 10 cm by changing the position of thelower plate 3.
To assist in the generation of the plasma, the working gas injected by thegas inlet system 5 and the ion beam species injected by theion beam source 7 may be replaced.
Further, the two polar plates are connected to a cable polar plate interface reserved at the bottom of thevacuum chamber 1 through a cable; the output end of the radiofrequency power supply 4 is connected to the interface of the upperpolar plate 2 or the lowerpolar plate 3 through a coaxial cable.
Further, therf power source 4 uses an rf sinusoidal ac power source as a driving power source to generate a conventional capacitively coupled plasma.
Theion beam source 7 can control ion flow and energy parameters to provide high-energy ions and inject the high-energy ions into a discharge interval through the grid-shaped electrode, and the injected high-energy ions can directly collide with each particle in the discharge interval and transfer energy, so that the plasma density is improved, and the low-energy ion flux bombarded on the polar plate is increased.
Further, the upper position and the lower position of the lower polar plate in the chamber are adjusted to control the discharge gap to be changed between 1 cm and 10 cm; the working air pressure is controlled and stably maintained between 1 mTorr and 1 Torr by adjusting the air pumping quantity of the vacuum pump set.
The ion beam and radio frequency hybrid driving capacitive coupling plasma source has a simple and reasonable structure, and can generate large-area and high-density plasma more easily by injecting high-energy ion beams perpendicular to the polar plate on the basis of the traditional radio frequency capacitive coupling plasma, and simultaneously can more effectively adjust the ion flux and energy. In addition, the plasma source keeps the simple structure and rationality of the traditional capacitive coupling plasma source device, and the ion beam source block is added, thereby ensuring the feasibility of the plasma source. The device provides wider discharge controllable parameters, can meet different discharge requirements, and improves the application effect of the plasma so as to be applied to more plasma treatment processes.
Compared with the radio frequency capacitive coupling plasma under the same condition of low pressure, the method can generate higher density (n)e＞1016m-3) The plasma body can effectively regulate and control the ion flux and ion energy bombarded on the polar plate. Therefore, the method can be widely applied to the fields of material surface etching, material film preparation and the like.
There are various examples of specific embodiments of the present invention, as follows:
example 1: referring to the structure of fig. 1, therf power source 4 selects an output voltage of 13.56MHz and 200V frequency and is connected to theupper plate 2 and thelower plate 3 for grounding treatment, the gap between the upper plate and the lower plate is 2cm, the discharge pressure is controlled to be 200mTorr, argon gas with a purity of 99.9995% is injected through thegas inlet system 5, and the ion beam source provides ion beams with different energies and flows. Under the common drive of the radio frequency power supply and the ion beam source, plasma with high ion flux and high electron density can be generated.
Example 2: referring to the structure of fig. 1, the radio frequency output end is selected to be connected to the lowerpolar plate 3, the grid-shaped upperpolar plate 2 is grounded, the output frequency and the voltage of the radio frequency power supply are respectively set to be 13.56MHz and 200V, the gap between the two polar plates is set to be 2cm, the working air pressure is maintained at 200mTorr through thevacuum pump set 6, and theion beam source 7 provides high-energy ion beams to be injected into a plasma region from meshes in the upperpolar plate 2. The low-energy ion flux bombarded on the polar plate can be increased, the plasma density is improved, the position of a plasma sheath layer is influenced, and the electron energy distribution is changed.
Example 3: referring to the structure of fig. 1, the upper and lower plates are grounded, the gap between the plates is set to be 2cm, after thevacuum pump set 6 provides a vacuum environment of thevacuum chamber 1, thegas inlet system 5 injects pure argon (99.9995%) with a certain gas mass flow, theion beam source 7 works normally and provides ion beams perpendicular to theupper plate 2 to inject into a discharge area, and argon discharge is maintained.
The present invention is not limited to the above examples, and the parameters of each component can be changed to obtain plasmas with different requirements. The invention takes a radio frequency source as a main driving discharge device, and an ion beam source modulates plasma, thereby being capable of regulating and controlling the energy and flux of ions bombarded on a polar plate.
As shown in fig. 2, the square line is a conventional rf CCP source, the circular line is anion beam source 7 for driving discharge, and the triangular line is a hybrid driving source with rf output connected to thelower plate 2. A significant increase in plasma density can be seen in figure 2 by the implanted high energy ion beam (>1016m-3) The ion flux on the lower polar plate can be increased, the ion energy distribution at the lower polar plate is increased, and the electron energy distribution in the plasma is changed.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (8)
1. A capacitive coupling plasma source driven by ion beams and radio frequency in a mixed mode is characterized by comprising a vacuum chamber (1), wherein an upper polar plate (2) and a lower polar plate (3) which are parallel and horizontally arranged are arranged in the vacuum chamber, the upper polar plate (2) is a grid-shaped polar plate, and an ion beam source (7) is arranged right above the upper polar plate (2);
the capacitive coupling plasma source also comprises a radio frequency power supply (4), and the output end of the radio frequency power supply is connected with the upper polar plate (2) or the lower polar plate (3);
the vacuum chamber (1) is also provided with an air inlet system, and discharge gas is injected into the vacuum chamber (1) through the air inlet system (5);
the upper polar plate (2) and the lower polar plate (3) generate capacitively coupled plasma after being electrified, high-energy ions in the ion beam source (7) are injected into a discharge region through a grid-shaped polar plate, and directly collide with each particle in the plasma in the discharge region to transfer energy.
2. The ion beam and rf hybrid driven capacitively coupled plasma source of claim 1, wherein the rf power supply (4) outputs a sinusoidal ac voltage.
3. The ion beam and rf hybrid driven capacitively coupled plasma source of claim 1, characterized in that the frequency of the rf power supply (4) is lower than 30 MHz.
4. The ion beam and rf hybrid driven capacitively coupled plasma source of claim 1, characterized in that the gap between the upper plate (2) and the lower plate (3) is adjustable, the gap being 1-10 cm.
5. The ion beam and rf hybrid driven capacitively coupled plasma source of claim 1, further comprising a vacuum pump set (6) for pumping exhaust gas and controlling discharge gas pressure.
6. The ion beam and rf hybrid driven capacitively coupled plasma source according to claim 1, characterized in that the gas inlet system (5) is placed at the side wall of the vacuum chamber (1) near the top position.
7. The ion beam and rf hybrid driven capacitively coupled plasma source according to claim 1, characterized in that the vacuum pump set (6) is placed in the center of the bottom of the vacuum chamber (1).
8. A method for generating a capacitively coupled plasma, based on a capacitively coupled plasma source driven by a mixture of an ion beam and a radio frequency according to any one of claims 1 to 7, comprising the steps of:
a gas inlet system (5) provides discharge gas with stable flow in a low-pressure closed environment of the vacuum chamber (1);
the radio frequency power supply (4) drives and maintains the upper polar plate (2) and the lower polar plate (3) to discharge so as to generate capacitive coupling plasma;
injecting high-energy ion beams in the ion beam source (7) into a plasma region from the grid-shaped electrode plate;
the high-energy ion beam directly collides with each particle in the discharge area and transfers energy, so that the low-energy ion flux bombarded to the polar plate is increased, the plasma density is improved, the position of a plasma sheath layer is influenced, and the electron energy distribution is changed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110555800.XACN113436951A (en) | 2021-05-21 | 2021-05-21 | Ion beam and radio frequency hybrid driven capacitively coupled plasma source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110555800.XACN113436951A (en) | 2021-05-21 | 2021-05-21 | Ion beam and radio frequency hybrid driven capacitively coupled plasma source |
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| CN113436951Atrue CN113436951A (en) | 2021-09-24 |
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| CN202110555800.XAPendingCN113436951A (en) | 2021-05-21 | 2021-05-21 | Ion beam and radio frequency hybrid driven capacitively coupled plasma source |
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Cited By (2)
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| CN114242555A (en)* | 2021-12-21 | 2022-03-25 | 武汉理工大学 | Capacitive coupling plasma source based on frequency modulation wave driving |
| CN115510728A (en)* | 2022-09-21 | 2022-12-23 | 大连理工大学 | Plasma source simulation method and system, electronic equipment and storage medium |
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- 2021
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| CN115510728A (en)* | 2022-09-21 | 2022-12-23 | 大连理工大学 | Plasma source simulation method and system, electronic equipment and storage medium |
| CN115510728B (en)* | 2022-09-21 | 2025-05-06 | 大连理工大学 | A plasma source simulation method, system, electronic device and storage medium |
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