CN113284991A - Micro LED chip, packaging method thereof and electronic device - Google Patents

Abstract

The invention provides a micro LED chip, a packaging method thereof and an electronic device, wherein the packaging method comprises the following steps: providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures; providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance; bonding each receiving electrode and the corresponding micro LED chip structure; and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.

Description

Micro LED chip, packaging method thereof and electronic device

Technical Field

The invention relates to the technical field of semiconductor device manufacturing, in particular to a micro LED chip, an electronic device and a packaging method thereof.

Background

An LED (Light-Emitting Diode) chip is used as a core component of semiconductor lighting, it is ensured that basic photoelectric performance and appearance requirements are the basis of subsequent processing, and after the production and processing of the LED chip are completed, the photoelectric performance of the chip needs to be tested, so that the LED chip is classified according to its photoelectric parameters.

In the existing LED chip, an automatic tester is generally used for testing, but the spot testing technology in the prior art is generally suitable for LED chips of ordinary size. With the development of LEDs, minileds and micro LEDs are used as a new generation of display technology, and LED chips are miniaturized for use as a display panel. Taking a Micro LED with the size smaller than 100 μm as an example, the photoelectric test of the Micro LED Micro device is difficult to be completed by the probe equipment for the electrical test in the prior art because the size of the electrode of the Micro LED is reduced and the distance between the positive electrode and the negative electrode is reduced. In addition, the photoluminescence detection and the optical detection of the current non-contact test means cannot replace the test contents of the electrical test.

In addition, the micro LED chip with the flip-chip packaging structure is based on the flip-chip welding technology, and on the basis of the traditional micro LED chip packaging, the gold wire lead packaging technology is reduced, and a lead frame and routing are omitted. Because no gold wire lead is arranged, the packaging problems such as cold joint, poor contact and the like can be avoided. In addition, compared with the packaging process of the micro LED chip of the forward packaging structure, the packaging density of the micro LED chip of the inverted packaging structure is increased, and the packaging volume is obviously reduced.

Therefore, a micro LED chip structure and a manufacturing method thereof are needed to overcome the problems of high packaging difficulty and difficulty in photoelectric detection of the existing micro LED chip structure by using the advantages of the chip scale packaging technology of the flip chip packaging structure.

Disclosure of Invention

In order to solve the above problems, the technical solution of the present invention provides a packaging method, which is suitable for packaging a micro LED chip, and the packaging method includes:

providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures;

providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance;

bonding each receiving electrode and the corresponding micro LED chip structure; and

and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.

As an optional technical solution, the micro LED chip is a flip-chip micro LED chip.

As an optional technical solution, the conductive bonding layer is selected from an anisotropic conductive adhesive layer, a solder paste layer, or a conductive silver paste.

As an optional technical solution, an edge of the receiving electrode protrudes an edge of the micro LED chip projected on the second substrate.

As an optional technical solution, the method further comprises: forming a plurality of through holes in the second substrate, wherein the through holes correspond to the receiving electrodes one to one, and each receiving electrode is exposed from the corresponding through hole;

filling a conducting layer in the through holes; and

forming a plurality of welding electrodes on one side of the second substrate far away from the plurality of micro LED chip structures, wherein the plurality of welding electrodes correspond to the plurality of receiving electrodes one to one;

wherein, each conducting layer conducts the corresponding receiving electrode and the welding electrode.

As an optional technical solution, the material of the conductive layer is selected from metallic copper, metallic aluminum, or a combination thereof.

As an optional technical solution, the method further comprises: forming a plurality of auxiliary electrodes on the second substrate, wherein the plurality of auxiliary electrodes correspond to the plurality of receiving electrodes one to one; each auxiliary electrode covers one side of each corresponding receiving electrode far away from the second substrate, and each auxiliary electrode is electrically connected with each receiving electrode.

The present invention also provides a micro LED chip, including: a substrate; a receiving electrode disposed on a surface of one side of the substrate; a conductive bonding layer disposed on a surface of the receiving electrode on a side away from the substrate; and the device electrode of the micro LED chip structure extends out towards one side of the substrate, and is fixedly connected with the conductive bonding layer.

As an optional technical solution, the micro LED chip structure further comprises a bonding electrode, wherein the bonding electrode is located on a surface of the substrate on a side away from the micro LED chip structure; the substrate further comprises a through hole and a conducting layer filled in the through hole, and the conducting layer conducts the welding electrode and the receiving electrode.

The invention also provides an electronic device which comprises the micro LED chip.

Compared with the prior art, the invention provides the micro LED chip, the packaging method thereof and the electronic device, wherein the receiving electrode is formed on the second substrate in advance through a patterning process, and the receiving electrode can meet the test specification of the existing photoelectric detection device by adjusting the area size of the receiving electrode. In addition, the mode of combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure reduces the packaging difficulty of the micro LED chip under the wafer level packaging process, so that the packaging process is easier to carry out, and the requirement on equipment is obviously reduced.

The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a flowchart of a packaging method according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of a micro LED chip according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of a first substrate.

Fig. 4 is a schematic cross-sectional view of a second substrate.

Fig. 5 is a top view of a second substrate.

Fig. 6 is a schematic cross-sectional view of a conductive bonding layer formed on a second substrate.

Fig. 7 is a schematic cross-sectional view of bonding a first substrate and a second substrate.

Fig. 8 is a schematic cross-sectional view of separating a first substrate and a second substrate.

FIG. 9 is a cross-sectional view of a second substrate etched to form a via.

Fig. 10 is a schematic view of forming a conductive layer in a via hole of a second substrate.

FIG. 11 is a cross-sectional view of a conductive layer formed over a side of a second substrate.

Fig. 12 is a schematic cross-sectional view of a patterned conductive layer.

Fig. 13 is a schematic cross-sectional view of a micro LED chip according to another embodiment of the invention.

Fig. 14 is a cross-sectional view of a portion of the fabrication process of the micro LED chip of fig. 13.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.

Wafer Level Package (WLP) refers to a process of performing most or all of the Package testing procedures directly on a Wafer, and then performing a cutting process to form a single component. In WLP, since the die itself becomes the package, it is the smallest package that can be manufactured and is now widely used.

In addition, because the size of the micro LED is obviously reduced, when the micro LED on the wafer is packaged by adopting a wafer-level packaging process, the packaging difficulty is high, and the packaged photoelectric test is not easy to carry out.

As shown in fig. 1, an embodiment of the present invention provides a packaging method suitable for packaging a micro LED chip, including:

providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures;

providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance;

bonding each receiving electrode and the corresponding micro LED chip structure; and

and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.

In a preferred embodiment, the receiving electrode is formed on the second substrate in advance through a patterning process, and the area size of the receiving electrode is adjusted, so that the receiving electrode can meet the test specification of the existing photoelectric detection device. Preferably, the size of the receiving electrode can be significantly larger than that of the device electrode in the micro LED chip structure, and in the subsequent photoelectric test, the test probe of the existing photoelectric test apparatus can be in contact with the receiving electrode to perform photoelectric performance detection.

In the above-described packaging method, the receiving electrodes that can be used to improve the reliability of the optoelectronic test are formed in advance, while in combination with the selective separation of portions of the micro LED chip structures on the first substrate by a transfer technique such as a bulk transfer technique, a spread-pitch transfer (the second pitch is greater than the first pitch) is achieved, with a substantial pitch formed between adjacent micro LED chip structures, with the receiving electrodes being arranged in the substantial pitch.

In addition, the packaging difficulty of the micro LED chip under the wafer level packaging process is reduced by combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure, so that the packaging process is easier to perform, and the requirement on equipment is obviously reduced. The packaging process of themicro LED chip 100 is described in detail with reference to fig. 2 to 12. Themicro LED chip 100 is, for example, a flip-chip micro LED chip.

As shown in fig. 3, afirst substrate 10 is provided, a plurality of microLED chip structures 20 are disposed on thefirst substrate 10, and a first distance W1 is formed between any adjacent microLED chip structures 20.

Each microLED chip structure 20 includes, from bottom to top, abuffer layer 21, an N-type gallium nitride layer 22, a quantum well layer 23, a P-type gallium nitride 24, and adevice electrode 26 stacked in sequence, and apassivation layer 25 covers thebuffer layer 21, the N-type gallium nitride layer 22, the quantum well layer 23, and the P-type gallium nitride 24, wherein thedevice electrode 26 extends out of a surface of thepassivation layer 25 on a side away from thefirst substrate 10, so as to be electrically connected to an external device.

Note that, thebuffer layer 21 is patterned to form a very narrow slit structure, and the very narrow slit structure enables adjacent micro LED chip structures to be spaced apart by the first distance W1. Such a narrow slit structure can effectively improve the effective utilization rate of thebuffer layer 21.

In a preferred embodiment, thebuffer layer 21 is, for example, a gallium nitride buffer layer, a gallium arsenide buffer layer, or a gallium indium arsenide phosphide buffer layer.

In the present embodiment, the microLED chip structure 20 is, for example, a forward mounting structure LED. Themicro LED chip 100 is packaged into a flip-chip structure by the packaging method shown in fig. 1.

Fig. 4 shows a schematic cross-sectional view of thesecond substrate 30, and fig. 5 shows a schematic top view of thesecond substrate 30.

As shown in fig. 4 and 5, a plurality of receivingelectrodes 40 are disposed on thesecond substrate 30, and any adjacent receivingelectrodes 40 are spaced apart by a second distance W2, where the second distance W2 is greater than the first distance W1.

The receivingelectrodes 40 are formed on thesecond substrate 30 in advance by, for example, a patterning process.

Specifically, a conductive layer is formed on thesecond substrate 30 by using an evaporation, sputtering, or plating process; coating a positive photoresist on the surface of the conductive layer on the side far away from thesecond substrate 30; exposing, developing, removing the photoresist, exposing a part of the conductive layer from the positive photoresist layer, and etching to remove the exposed part of the conductive layer to form a plurality of receivingelectrodes 40.

In other embodiments of the present invention, the conductive layer patterning process may be performed by using a negative photoresist.

In this embodiment, each receivingelectrode 40 includes afirst receiving electrode 41 and asecond receiving electrode 42 electrically isolated from each other, wherein the first receivingelectrode 41 and thefirst device electrode 261 are electrically connected, and thesecond receiving electrode 42 and thesecond device electrode 262 are electrically connected.

As shown in fig. 6, aconductive bonding layer 50 is formed on the surfaces of the first receivingelectrode 41 and thesecond receiving electrode 42 on the side away from thesecond substrate 30 by coating, attaching, or the like.

In a preferred embodiment, theconductive bonding layer 50 is selected from an anisotropic conductive adhesive layer, a solder paste layer, or a conductive silver paste, for example.

Wherein theconductive bonding layer 50 makes the first andsecond device electrodes 261 and 262 of the microLED chip structure 20 and the corresponding first andsecond receiving electrodes 41 and 42 electrically connected to each other, and theconductive bonding layer 50 fixes the first andsecond device electrodes 261 and 262 of the microLED chip structure 20.

As shown in fig. 6 and 7, each receivingelectrode 40 on thesecond substrate 30 and the corresponding microLED chip structure 20 on thefirst substrate 10 are bonded.

Since the first pitch W1 is smaller than the second pitch W2, only a portion of the microLED chip structures 20 on thefirst substrate 10 can be bonded with the first receivingelectrode 41 and thesecond receiving electrode 42 on thesecond substrate 30. The bonding between the partial microLED chip structure 20 and the corresponding receivingelectrode 40 can be regarded as that the receivingelectrode 40 is selectively bonded with the microLED chip structure 20, so as to control the expansion of the distance between the microLED chip structures 20 transferred onto thesecond substrate 30, thereby facilitating the subsequent other packaging processes.

As shown in fig. 7 and 8, laser is selectively irradiated onto thefirst substrate 10, and a portion of the microLED chip structure 20 bonded to the receivingelectrode 40 is controlled to be separated from thefirst substrate 10, so that a portion of themicro LED chip 20 is transferred onto thesecond substrate 30.

In this embodiment, a third distance is formed between any adjacent microLED chip structures 20 on thesecond substrate 30, and the third distance is greater than the second distance.

In a preferred embodiment, the edge of the receivingelectrode 40 protrudes from the projection of the microLED chip structure 20 on thesecond substrate 30. That is, the first receivingelectrode 41 and thesecond receiving electrode 42 extend in opposite directions, and extend in directions away from the microLED chip structure 20.

Further, thesecond substrate 30 in fig. 8 is cut, so that the micro LED chip with the flip-chip structure can be obtained.

As shown in fig. 13 and 14, in another embodiment of the present invention, a micro LED chip 100 'is further provided, the micro LED chip 100' further includes a firstauxiliary electrode 411 and a secondauxiliary electrode 421 formed on the first receivingelectrode 41 and thesecond receiving electrode 42, the firstauxiliary electrode 411 is used to improve stability of the first receivingelectrode 41, and the secondauxiliary electrode 421 is used to improve stability of thesecond receiving electrode 42.

Specifically, when the microLED chip structure 20 is transferred onto thesecond substrate 30, due to a transfer error that may occur, the electrical contact between the first receivingelectrode 41 and/or the second receiving electrode and the correspondingfirst device electrode 261 and/or the correspondingsecond device electrode 262 is abnormal, the firstauxiliary electrode 411 is formed on the first receivingelectrode 41 and/or the secondauxiliary electrode 421 is formed on thesecond receiving electrode 42 by an evaporation and plating process, the firstauxiliary electrode 411 covers the first receivingelectrode 41 and/or thefirst device electrode 261, the secondauxiliary electrode 421 covers thesecond receiving electrode 42 and/or thesecond device electrode 262, and stability between the first receivingelectrode 41 and thefirst device electrode 261 and between thesecond receiving electrode 42 and thesecond device electrode 262 is ensured, thereby improving the packaging reliability.

In addition, in order to make the micro LED chip in the flip-chip structure electrically connected to other electronic components more conveniently, the formation of the bonding electrode is usually continued, and the bonding electrode is formed on the surface of thesecond substrate 30 on the side away from the microLED chip structure 20.

As shown in fig. 9, a plurality of first throughholes 31 and a plurality of second throughholes 32 are formed on thesecond substrate 30, the plurality of first throughholes 31 are opposite to the plurality offirst receiving electrodes 41, the plurality of second throughholes 32 are opposite to the plurality ofsecond receiving electrodes 42, each first receivingelectrode 41 is exposed from the corresponding first throughhole 31, and each second receivingelectrode 42 is exposed from the corresponding second throughhole 32.

As shown in fig. 10, theconductive layer 60 is plated into the first throughholes 31 and the second throughholes 32, theconductive layer 60 is a conductive pillar filled in the first throughholes 31 and the second throughholes 32, and one end of the conductive pillar is electrically connected to the corresponding first receivingelectrode 41 or thesecond receiving electrode 42.

In a preferred embodiment, the material of theconductive layer 60 is selected from copper, aluminum, or a combination thereof.

As shown in fig. 11, aconductive layer 70 is formed on the surface of thesecond substrate 30 away from the microLED chip structure 20 by evaporation, sputtering, electroplating, or the like.

As shown in fig. 12, the patternedconductive layer 70 forms a plurality of welding electrodes, each of which includes afirst welding electrode 71 and asecond welding electrode 72, wherein theconductive layer 60 conducts the first receivingelectrode 41 and thefirst welding electrode 71, and thesecond receiving electrode 42 and thesecond welding electrode 72.

Further, thesecond substrate 30 shown in fig. 12 is diced to make themicro LED chip 100 shown in fig. 2.

Since the soldering electrode is formed on one side of thesecond substrate 30, it can be assembled by a die bonding process when it is electrically connected to an external element such as a driving back plate.

In the packaging process of the microLED chip structures 20 shown in fig. 3 to fig. 12, the microLED chip structures 20 transferred onto thesecond substrate 30 in a single time and connected to the corresponding receivingelectrodes 40 are, for example, but not limited thereto.

In other embodiments of the present invention, for example, a plurality of micro LED chip structures may be simultaneously transferred onto the second substrate, and the plurality of micro LED chip structures constitute one micro LED chip unit and are transferred onto the second substrate at one time, wherein the plurality of micro LED chip structures in one micro LED chip unit share the receiving electrode. That is, the first device electrode of each micro LED chip structure in the plurality of micro LED chip structures is electrically connected to the first receiving electrode, and the second device electrode of each micro LED chip structure in the plurality of micro LED chip structures is electrically connected to the second receiving electrode.

In a preferred embodiment, a plurality of micro LED chip structures are arranged in the row direction and the column direction to form a micro LED chip unit.

The invention also provides a micro LED chip which is manufactured by the packaging method of the micro LED chip structure.

The micro LED chip includes: a substrate; a receiving electrode disposed on a surface of one side of the substrate; the conductive bonding layer is arranged on the surface of one side, away from the substrate, of the receiving electrode; and the device electrode of the micro LED chip structure extends out towards one side of the substrate, and is fixedly connected with the conductive bonding layer.

In a preferred embodiment, the micro LED chip further comprises a bonding electrode, the bonding electrode is located on a surface of the substrate on a side away from the micro LED chip structure; the substrate further comprises a through hole and a conducting layer filled in the through hole, and the conducting layer conducts the welding electrode and the receiving electrode.

In another embodiment of the present invention, an electronic device is further provided, and the electronic device includes the micro LED chip. The electronic device is, for example, a display device or an illumination device.

In summary, the present invention provides a micro LED chip, a method for packaging the same, and an electronic device, wherein a receiving electrode is formed on a second substrate in advance through a patterning process, and the size of the receiving electrode is adjusted to make the receiving electrode conform to the test specification of the conventional photo-detection device. In addition, the mode of combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure reduces the packaging difficulty of the micro LED chip under the wafer level packaging process, so that the packaging process is easier to carry out, and the requirement on equipment is obviously reduced.

The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It should be noted that the present invention may have other embodiments, and those skilled in the art may make various changes and modifications according to the present invention without departing from the spirit and scope of the present invention.

Claims (10)

Translated fromChinese

1.一种封装方法，适用于微LED芯片封装，其特征在于，所述封装方法包括：1. A packaging method, suitable for micro-LED chip packaging, characterized in that the packaging method comprises:提供第一衬底，所述第一衬底上设有若干微LED芯片结构，任意相邻的微LED芯片结构之间间隔第一间距；A first substrate is provided, on which a plurality of micro-LED chip structures are arranged, and a first spacing is spaced between any adjacent micro-LED chip structures;提供第二衬底，所述第二衬底上设有若干接收电极，每一接收电极上设置导电结合层，任意相邻的接收电极之间间隔第二间距，所述第二间距大于所述第一间距；A second substrate is provided, a plurality of receiving electrodes are arranged on the second substrate, a conductive bonding layer is arranged on each receiving electrode, and a second distance is spaced between any adjacent receiving electrodes, and the second distance is greater than the first distance;键合每一接收电极和对应的微LED芯片结构；以及bonding each receiving electrode and the corresponding micro-LED chip structure; and激光照射所述第一衬底，选择性转移与每一接收电极键合的微LED芯片结构至所述第二衬底上制得所述微LED芯片。The first substrate is irradiated with laser light, and the micro-LED chip structure bonded with each receiving electrode is selectively transferred onto the second substrate to prepare the micro-LED chip.2.根据权利要求1所述的封装方法，其特征在于，所述微LED芯片为倒装结构微LED芯片。2 . The packaging method according to claim 1 , wherein the micro-LED chip is a flip-chip micro-LED chip. 3 .3.根据权利要求1所述的封装方法，其特征在于，所述导电结合层为选自异方性导电胶层、锡膏层或者导电银胶。3 . The packaging method according to claim 1 , wherein the conductive bonding layer is selected from the group consisting of anisotropic conductive adhesive layer, solder paste layer or conductive silver adhesive. 4 .4.根据权利要求1所述的封装方法，其特征在于，所述接收电极的边缘突出所述微LED芯片在所述第二衬底上投影的边缘。4 . The packaging method according to claim 1 , wherein the edge of the receiving electrode protrudes from the edge of the projection of the micro LED chip on the second substrate. 5 .5.根据权利要求1所述的封装方法，其特征在于，还包括：5. The packaging method according to claim 1, further comprising:于所述第二衬底形成若干通孔，若干通孔和若干接收电极一一对应，且每一接收电极自对应的通孔中露出；forming a plurality of through holes in the second substrate, the through holes correspond to a plurality of receiving electrodes one-to-one, and each receiving electrode is exposed from the corresponding through hole;于所述若干通孔中填充导通层；以及filling a conduction layer in the plurality of through holes; and于所述第二衬底远离所述若干微LED芯片结构的一侧形成若干焊接电极，若干焊接电极和若干接收电极一一对应；forming a plurality of welding electrodes on a side of the second substrate away from the plurality of micro-LED chip structures, and a plurality of welding electrodes and a plurality of receiving electrodes are in one-to-one correspondence;其中，每一导通层导通对应的接收电极和焊接电极。Wherein, each conducting layer conducts the corresponding receiving electrode and welding electrode.6.根据权利要求5所述的封装方法，其特征在于，所述导通层的材料选自金属铜、金属铝或者其组合。6 . The packaging method according to claim 5 , wherein the material of the conduction layer is selected from metal copper, metal aluminum or a combination thereof. 7 .7.根据权利要求1所述的封装方法，其特征在于，还包括：7. The packaging method according to claim 1, further comprising:形成若干辅助电极于所述第二衬底上，若干辅助电极与若干接收电极一一对应；forming a plurality of auxiliary electrodes on the second substrate, a plurality of auxiliary electrodes corresponding to a plurality of receiving electrodes one-to-one;其中，每一辅助电极覆盖于对应的每一接收电极远离所述第二衬底一侧，且每一辅助电极电连接每一接收电极。Wherein, each auxiliary electrode covers the side of each corresponding receiving electrode away from the second substrate, and each auxiliary electrode is electrically connected to each receiving electrode.8.一种微LED芯片，其特征在于，所述微LED芯片包括：8. A micro-LED chip, wherein the micro-LED chip comprises:衬底；substrate;接收电极，所述接收电极设置于所述衬底一侧的表面上；a receiving electrode, the receiving electrode is arranged on the surface of one side of the substrate;导电结合层，所述导电结合层设置于所述接收电极远离所述衬底一侧的表面上；以及a conductive bonding layer, the conductive bonding layer is disposed on the surface of the receiving electrode on the side away from the substrate; and微LED芯片结构，所述微LED芯片结构的器件电极朝向所述衬底一侧伸出，且所述器件电极固定连接所述导电结合层。In the micro-LED chip structure, the device electrodes of the micro-LED chip structure protrude toward one side of the substrate, and the device electrodes are fixedly connected to the conductive bonding layer.9.根据权利要求8所述的微LED芯片，其特征在于，还包括焊接电极，所述焊接电极位于所述衬底远离所述微LED芯片结构一侧的表面上；9 . The micro-LED chip according to claim 8 , further comprising a welding electrode, the welding electrode is located on the surface of the substrate on a side away from the structure of the micro-LED chip; 9 .所述衬底还包括通孔和填充于所述通孔中的导通层，所述导通层导通所述焊接电极和所述接收电极。The substrate further includes a through hole and a conduction layer filled in the through hole, and the conduction layer conducts the welding electrode and the receiving electrode.10.一种电子装置，其特征在于，所述电子装置包括如权利要求8-9中任意一项所述的微LED芯片。10. An electronic device, characterized in that, the electronic device comprises the micro-LED chip according to any one of claims 8-9.

Images