CN113257984A - Temperature-adjustable flexible thermoelectric device and preparation method and application thereof - Google Patents
Temperature-adjustable flexible thermoelectric device and preparation method and application thereofDownload PDFInfo
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- CN113257984A CN113257984ACN202110406971.6ACN202110406971ACN113257984ACN 113257984 ACN113257984 ACN 113257984ACN 202110406971 ACN202110406971 ACN 202110406971ACN 113257984 ACN113257984 ACN 113257984A
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
- H—ELECTRICITY
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
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Abstract
Description
Technical Field
The application belongs to the technical field of functional fabrics, and particularly relates to a temperature-adjustable flexible thermoelectric device and a preparation method and application thereof.
Background
Different kinds of functional fabrics have been developed in the prior art based on the human body's heat balance of thermal radiation, thermal convection, thermal conduction and evaporation of sweat. These fabrics can achieve thermal management of the human body to some extent, but under extremely complicated conditions, such as severe cold or hot summer, there are many limitations to achieving warm keeping or cooling by means of only passive regulation of the fabrics, and the effect of making the human body comfortable is often not achieved.
The thermoelectric device provided at present mainly uses a ceramic substrate which is not bendable and has high brittleness as a base body, is only suitable for industrial use, and is applied to textiles or a human body, and a flexible wearable thermoelectric device is needed to be provided, so that the thermoelectric device can be conveniently integrated into fabrics for personalized human body thermal management.
At present, great research progress has been made on personal heat management fabrics, but the provided materials can only realize the effect of refrigeration or heating independently, and cannot switch between refrigeration and heating so as to deal with various complicated and variable conditions, so that the better heat management effect of the heating effect and the refrigeration effect cannot be realized, and further the wide application is influenced.
Disclosure of Invention
The application aims to provide a temperature-adjustable flexible thermoelectric device and a preparation method and application thereof, and aims to solve the problems that the thermoelectric material in the prior art is a non-stretchable material and can only realize the effect of refrigeration or heating independently.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides a temperature adjustable flexible thermoelectric device comprising:
a first flexible substrate, a first flexible electrode layer being laminated and bonded to a surface of the first flexible substrate;
a thermoelectric layer including a plurality of pairs of thermoelectric pairs arranged at intervals, the thermoelectric pairs including a p-type semiconductor thermoelectric unit and an n-type semiconductor thermoelectric unit;
a second flexible substrate having a second flexible electrode layer laminated and bonded to a surface thereof;
wherein the thermoelectric layer is bonded between the first flexible electrode layer and the second flexible electrode layer, and the p-type semiconductor thermoelectric units and the n-type semiconductor thermoelectric units form a pi-type series structure; and the first flexible electrode layer and the second flexible electrode layer are connected in series.
In a second aspect, the present application provides a method of making a temperature adjustable flexible thermoelectric device, comprising the steps of:
preprocessing a first flexible substrate and a second flexible substrate;
preparing a first flexible electrode and a second flexible electrode on any surface of the first flexible substrate and the second flexible substrate;
arranging and combining first end faces of thermoelectric pairs on the surface of the first flexible electrode at intervals, and combining the second flexible electrode with second end faces of the thermoelectric pairs to obtain a composite layer structure, wherein the thermoelectric pairs comprise p-type semiconductor thermoelectric units and n-type semiconductor thermoelectric units, and each p-type semiconductor thermoelectric unit and each n-type semiconductor thermoelectric unit form a pi-type series structure;
and after the composite layer structure is cured and dried, connecting the first flexible electrode layer and the second flexible electrode layer in series to obtain the temperature-adjustable flexible thermoelectric device.
In a third aspect, the present application provides a use of the temperature adjustable flexible thermoelectric device in a textile.
According to the temperature-adjustable flexible thermoelectric device provided by the first aspect of the application, a stretchable and wearable flexible hotspot device is constructed by adopting a flexible substrate, a flexible thermoelectric material and a flexible electrode; meanwhile, in combination with the characteristics of thermoelectric materials, the device can change the cold and hot surfaces by adjusting the current direction in the passage, and in the use process, the conduction direction of the current is adjusted by adjusting the connection direction of the circuit, so that the current flows from the p-type semiconductor thermoelectric unit to the n-type semiconductor thermoelectric unit, the upper surface of the thermoelectric pair is a heating end, and the lower surface of the thermoelectric pair is a cooling end; changing the direction of the current changes the cold end and the hot end. The device can regulate and control the temperature to reach the required temperature in a short time, realizes the effect of regulating refrigeration or heating simultaneously, and has the advantages of tensile and bending of the material and the tensile strain capacity of more than 100 percent. Therefore, the obtained temperature-adjustable flexible thermoelectric device can be widely applied to daily-worn fabrics.
According to the preparation method of the temperature-adjustable flexible thermoelectric device, the preparation process is simple, the composite layer structure is well laminated and combined according to requirements and then is cured, and the temperature-adjustable flexible thermoelectric device can be obtained.
The gentle thermoelectric device of adjustable temperature that this application third aspect provided, the gentle thermoelectric device of adjustable temperature that the preparation obtained can adjust the temperature as required, realizes keeping human heat preservation and resisting severe cold under the low temperature environment again, realizes human cooling and resists hot and warm under high temperature environment, consequently can wide application in the fabrics.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a temperature-adjustable flexible thermoelectric device according to an embodiment of the present disclosure.
Fig. 2 is a schematic arrangement diagram of a first flexible electrode unit in a first flexible electrode layer provided in an embodiment of the present application.
Fig. 3 is a schematic arrangement diagram of a second flexible electrode unit in a second flexible electrode layer provided in an embodiment of the present application.
Fig. 4 is a schematic diagram of a thermoelectric pair provided in an embodiment of the present application.
Fig. 5 is a schematic view of a pi-type series structure provided in an embodiment of the present application.
Fig. 6 is a schematic view of a pi-type series structure provided in an embodiment of the present application.
Fig. 7 is a schematic diagram of a manufacturing process of a temperature adjustable flexible thermoelectric device according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a temperature-adjustable flexible thermoelectric device according to an embodiment of the present application.
Fig. 9 is a schematic diagram of a temperature adjustable flexible thermoelectric device provided in an embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In this application, the term "and/or" describes an association relationship of associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a is present alone, A and B are present simultaneously, and B is present alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
In the present application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, "at least one (a), b, or c", or "at least one (a), b, and c", may each represent: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, wherein a, b, and c may be single or plural, respectively.
It should be understood that, in various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, some or all of the steps may be executed in parallel or executed sequentially, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The weight of the related components mentioned in the description of the embodiments of the present application may not only refer to the specific content of each component, but also represent the proportional relationship of the weight among the components, and therefore, the content of the related components is scaled up or down within the scope disclosed in the description of the embodiments of the present application as long as it is scaled up or down according to the description of the embodiments of the present application. Specifically, the mass described in the specification of the embodiments of the present application may be a mass unit known in the chemical industry field such as μ g, mg, g, kg, etc.
The terms "first" and "second" are used for descriptive purposes only and are used for distinguishing purposes such as substances from one another, and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. For example, a first XX may also be referred to as a second XX, and similarly, a second XX may also be referred to as a first XX, without departing from the scope of embodiments of the present application. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
A first aspect of an embodiment of the present application provides a temperature-adjustable flexible thermoelectric device, as shown in fig. 1, including:
a firstflexible substrate 1, a firstflexible electrode layer 2 laminated and bonded on the surface of the firstflexible substrate 1;
athermoelectric layer 3, thethermoelectric layer 3 comprising a plurality of pairs ofthermoelectric pairs 31 arranged at intervals, and thethermoelectric pairs 31 comprising p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312;
a secondflexible substrate 5, a secondflexible electrode layer 4 being laminated and bonded on a surface of the secondflexible substrate 5;
thethermoelectric layer 3 is bonded between the firstflexible electrode layer 2 and the secondflexible electrode layer 4, so that each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure; and the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are wired in series.
According to the temperature-adjustable flexible thermoelectric device provided by the first aspect of the application, a stretchable and wearable flexible hotspot device is constructed by adopting a flexible substrate, a flexible thermoelectric material and a flexible electrode; meanwhile, in combination with the characteristics of thermoelectric materials, the device can change the cold and hot surfaces by adjusting the direction of current in the path, and in the using process, the conducting direction of the current is adjusted by adjusting the direction of circuit connection, so that the current flows from the p-type semiconductorthermoelectric unit 311 to the n-type semiconductorthermoelectric unit 312, and then the upper surface of thethermoelectric pair 31 is a heating end and the lower surface is a cooling end; changing the direction of the current changes the cold end and the hot end. The device can regulate and control the temperature to reach the required temperature in a short time, realizes the effect of regulating refrigeration or heating simultaneously, and has the advantages of tensile and bending of the material and the tensile strain capacity of more than 100 percent. Therefore, the obtained temperature-adjustable flexible thermoelectric device can be widely applied to daily-worn fabrics.
Specifically, the temperature-adjustable flexible thermoelectric device comprises a firstflexible substrate 1 and a secondflexible substrate 5, wherein the firstflexible substrate 1 and the secondflexible substrate 5 are made of flexible substrate materials, and the obtained thermoelectric device is guaranteed to be a flexible device integrally and is beneficial to being used in textiles. The flexible substrate is provided to mainly serve as a support and a carrier for other materials.
In some embodiments, the material of each of the firstflexible substrate 1 and the secondflexible substrate 5 is at least one selected from polydimethylsiloxane, hydrogenated styrene-butadiene block copolymer, and Ecoflex series silicone rubber, and the above material is selected as the flexible substrate, and has excellent material properties, good flexibility, and an insulating effect, and can be applied well.
In an embodiment of the present invention, the material of the firstflexible substrate 1 is selected from polydimethylsiloxane, and the material of the secondflexible substrate 5 is selected from polydimethylsiloxane.
In some embodiments, the thicknesses of the firstflexible substrate 1 and the secondflexible substrate 5 are both 0.2-0.5 mm, and the thicknesses of the firstflexible substrate 1 and the secondflexible substrate 5 are controlled to be thinner, so that the overall thickness of the obtained temperature-adjustable flexible hot spot device is ensured to be moderate, and the temperature-adjustable flexible hot spot device is favorably applied to textiles.
Further, a firstflexible electrode layer 2 is laminated and combined on the surface of the firstflexible substrate 1, the firstflexible electrode layer 2 is attached to thethermoelectric layer 3, and the arrangement of the electrode layer can facilitate the electric conduction and the heat conduction; meanwhile, the electrode layer is made of a flexible electrode layer material, the flexible electrode material can be bent and stretched, the stretching strain capacity can be more than 100%, and the problem that the traditional thermoelectric material is not stretchable can be solved.
Further, a secondflexible electrode layer 4 is laminated and combined on the surface of the secondflexible substrate 5, the secondflexible electrode layer 4 is attached to thethermoelectric layer 3, and the arrangement of the electrode layer can be favorable for electric conduction and heat conduction; meanwhile, the electrode layer is made of a flexible electrode layer material, the flexible electrode material can be bent and stretched, the stretching strain capacity can be more than 100%, and the problem that the traditional thermoelectric material is not stretchable can be solved.
In some embodiments, as shown in fig. 2, the first flexible electrode layer is a gridded flexible electrode layer, and the first flexible electrode layer includes a plurality of first flexible electrode units arranged at intervals; wherein the firstflexible electrode layer 2 comprises a plurality of firstflexible electrode units 21 with a certain spacing between them for the purpose of bonding with thethermoelectric pair 31.
In some embodiments, as shown in fig. 3, the second flexible electrode layer is a gridded flexible electrode layer, and the second flexible electrode layer includes a plurality of second flexible electrode units arranged at intervals, wherein the secondflexible electrode layer 4 includes a plurality of secondflexible electrode units 41, and the second flexible electrode units have certain intervals therebetween.
In some embodiments, the first flexible electrode unit and the second flexible electrode unit are in a staggered arrangement. The purpose is to combine the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 with the first flexible electrode element and the second flexible electrode element, respectively, to form a pi-type series structure, in order to combine thethermoelectric pair 31 with each other in a stacked manner.
In some embodiments, the materials of the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are selected from any one of copper, silver, gallium, and indium, and the use of any one of the above materials as the material of the flexible electrode layers can achieve better electric conduction and heat conduction effects, and simultaneously, the stretching effect is better, which is beneficial to use.
In some embodiments, the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are both 20-50 microns thick; the thickness of the flexible electrode layer is controlled to be moderate, and if the thickness is too thin, the obtained temperature-adjustable flexible thermoelectric device is easy to break the electrode layer in the process of bending and stretching, so that the use is influenced; if the thickness is too thick, the overall thickness of the resulting temperature-adjustable flexible thermoelectric device may be too high, which may affect use in fabrics.
Specifically, the temperature-adjustable flexible thermoelectric device further comprises athermoelectric layer 3, thethermoelectric layer 3 comprises a plurality of pairs ofthermoelectric pairs 31 arranged at intervals, and as shown in fig. 4, thethermoelectric pairs 31 comprise a p-type semiconductorthermoelectric unit 311 and an n-type semiconductorthermoelectric unit 312.
In some embodiments, thethermoelectric pairs 31 in thethermoelectric layer 3 are spaced, wherein the spacing is selected from a longitudinal staggered spacing or a transverse staggered spacing or both.
In some embodiments, thethermoelectric layer 3 includes at least 5 pairs or more ofthermoelectric pairs 31 in a pi-type series structure, and the more pairs ofthermoelectric pairs 31 are provided, the better electric and thermal conductivity can be achieved, so that the performance is more excellent.
In some embodiments, the distance between thethermoelectric pairs 31 arranged at intervals is 1.2-1.4 mm, which ensures that there is a distance between thethermoelectric pairs 31 and does not cause short circuit.
Eachthermoelectric pair 31 includes a p-type semiconductorthermoelectric unit 311 and an n-type semiconductorthermoelectric unit 312, and the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 are disposed opposite to each other.
In some embodiments, the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 are oppositely spaced, the spacing distance between the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 is 1.2-1.4 mm, and the spacing distance between the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 is controlled, so that the size of the spacing distance between the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 can be ensured, and good electric conduction and heat conduction effects can be facilitated.
Further, thethermoelectric layer 3 is bonded between the firstflexible electrode layer 2 and the secondflexible electrode layer 4, and the p-type semiconductorthermoelectric cell 311 and the n-type semiconductorthermoelectric cell 312 form a pi-type series structure.
In some embodiments, a pi-type series structure is formed as shown in fig. 5 and 6, wherein first end faces of the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 are respectively bonded to surfaces of the two opposite firstflexible electrode units 21 facing away from the first flexible substrate, and second end faces of the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 are jointly attached to surfaces of the secondflexible electrode units 41 facing away from the second flexible substrate, which are offset from the two opposite first flexible electrodes, so that each of the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 forms the pi-type series structure. The thermoelectric material may be energized to apply a voltage to thethermoelectric pair 31 to heat or cool the object. The working principle is as follows: when current passes through the thermocouple pair formed by connecting one n-type semiconductorthermoelectric unit 312 and one p-type semiconductorthermoelectric unit 311, heat transfer occurs between the two ends, and the heat is transferred from one end to the other end, so that temperature difference is generated to form a cold end and a hot end. When current flows from the n-type semiconductorthermoelectric unit 312 to the junction of the p-type semiconductorthermoelectric unit 311, heat is absorbed and becomes a cold side; the heat is released from the p-type semiconductorthermoelectric element 311 to the junction of the n-type semiconductorthermoelectric element 312, and becomes a hot side.
In some embodiments, the p-type semiconductorthermoelectric unit 311 is a sheet-like member made of bismuth telluride, skutterudite, lead sulfide, lead selenide, or lead telluride; the materials are selected as the materials of the semiconductor thermoelectric unit, so that the effects of electric conduction and heat conduction can be realized.
In some embodiments, the n-type semiconductorthermoelectric element 312 is a sheet-like member made of bismuth telluride, skutterudite, lead sulfide, lead selenide, or lead telluride; the materials are selected as the materials of the semiconductor thermoelectric unit, so that the effects of electric conduction and heat conduction can be realized.
In some embodiments, the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 have dimensions of 1.2 to 1.4mm in length, 1.2 to 1.4mm in width, and 0.8 to 1.0mm in height. Among them, the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 have the same dimensions, and therefore, the same specifications are ensured during use, and excellent action effect of the obtainedthermoelectric layer 3 is ensured.
Further, the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are connected in series by an external connection wire. The external wires are connected in series, the conducting direction of the current is adjusted by adjusting the connection direction of the circuit, so that the current flows from the p-type semiconductorthermoelectric unit 311 to the n-type semiconductorthermoelectric unit 312, the upper surface of thethermoelectric pair 31 is a heating end, and the lower surface is a cooling end; changing the direction of the current changes the cold end and the hot end.
In some embodiments, the thickness of the temperature-adjustable flexible thermoelectric device is controlled to be 1.5-2 mm; the temperature-adjustable flexible thermoelectric device is controlled to be moderate, the temperature-adjustable flexible thermoelectric device can be applied to wearable textiles, and the service life is guaranteed.
A second aspect of the embodiments of the present application provides a method for manufacturing a temperature-adjustable flexible thermoelectric device, where the temperature-adjustable flexible thermoelectric device provided in the first aspect of the embodiments is manufactured by the method, and a manufacturing process of the temperature-adjustable flexible thermoelectric device is as shown in fig. 7, and includes the following steps:
s01, preprocessing a firstflexible substrate 1 and a secondflexible substrate 5;
s02, preparing a first flexible electrode and a second flexible electrode on any surface of the firstflexible substrate 1 and the secondflexible substrate 5;
s03, arranging and combining first end faces ofthermoelectric pairs 31 on the surface of a first flexible electrode at intervals, and combining a second flexible electrode with second end faces of thethermoelectric pairs 31 to obtain a composite layer structure, wherein eachthermoelectric pair 31 comprises a p-type semiconductorthermoelectric unit 311 and an n-type semiconductorthermoelectric unit 312, and each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure;
and S04, curing and drying the composite layer structure, and connecting the first flexible electrode layer and the second flexible electrode layer in series to obtain the temperature-adjustable flexible thermoelectric device.
According to the preparation method of the temperature-adjustable flexible thermoelectric device, the preparation process is simple, the composite layer structure is well laminated and combined according to requirements and then is cured, and the temperature-adjustable flexible thermoelectric device can be obtained.
In step S01, the firstflexible substrate 1 and the secondflexible substrate 5 are pretreated; the pretreatment steps are as follows: vacuum drying is carried out for 10-15 minutes in order to eliminate bubbles.
In step S02, a first flexible electrode and a second flexible electrode are prepared on either surface of the firstflexible substrate 1 and the secondflexible substrate 5.
In some embodiments, the first flexible electrode layer comprises a plurality of first flexible electrode units arranged at intervals, and the second flexible electrode layer comprises a plurality of second flexible electrode units arranged at intervals; and the first flexible electrode unit and the second flexible electrode unit are arranged in a staggered mode.
Providing a first flexible electrode with gridding and a second flexible electrode with gridding, wherein the specific operation method comprises the following steps: s021, providing a gridding die frame, and respectively arranging the frame on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5; s022, respectively coating the stretchable electrodes on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5 according to the grids of the die frame to obtain a first flexible electrode and a second flexible electrode; the first flexible electrode and the second flexible electrode are arranged in a staggered mode.
In step S03, the first end faces of thethermoelectric pair 31 are arranged and bonded on the surface of the first flexible electrode at intervals, and the second flexible electrode is bonded to the second end face of thethermoelectric pair 31, so as to obtain a composite layer structure, wherein thethermoelectric pair 31 includes a p-type semiconductorthermoelectric unit 311 and an n-type semiconductorthermoelectric unit 312, and each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure.
In some embodiments,thermoelectric pair 31 includes p-type semiconductorthermoelectric element 311 and n-type semiconductorthermoelectric element 312, and in accordance with the above, the same material is selected, and p-type semiconductorthermoelectric element 311 and n-type semiconductorthermoelectric element 312 are cut to form a sheet in a size of 1.4mm long, 1.4mm wide, and 1.0mm high.
In some embodiments, the distance between the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 in eachthermoelectric pair 31 is 1.4 mm.
In some embodiments, the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 are connected to the first flexible electrode and the second flexible electrode by soldering.
In some embodiments, the method of welding comprises the steps of:
s031. control the distance between the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312,
s032, placing the p-type semiconductorthermoelectric unit 311 and the n-type semiconductorthermoelectric unit 312 on the surfaces of two different first flexible electrode units which are opposite to each other at intervals according to a provided distance;
s033, respectively welding a first end surface of the p-type semiconductorthermoelectric unit 311 and a first end surface of the n-type semiconductorthermoelectric unit 312 to surfaces of two different first flexible electrode units opposite to each other at an interval by using a conventional soldering technique;
s034, providing a second flexible electrode, and welding the second end face of the p-type semiconductorthermoelectric unit 311 and the second end face of the n-type semiconductorthermoelectric unit 312 to the surface of the same second flexible electrode which is arranged in a staggered manner with the first electrode by adopting the traditional soldering technology; a composite layer structure is obtained, and each of the p-type semiconductorthermoelectric cells 311 and the n-type semiconductorthermoelectric cells 312 forms a pi-type series structure.
In step S04, after the composite layer structure is cured and dried, the first flexible electrode layer and the second flexible electrode layer are connected in series, so as to obtain the temperature-adjustable flexible thermoelectric device.
In some embodiments, the composite layer structure is dried at 60-70 ℃ for 4-5 hours to obtain the temperature-adjustable flexible thermoelectric device.
Further, after the curing and drying treatment, an external wire is provided, the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are connected in series through the external wire, so that the cold and hot surfaces can be changed according to the direction of current in the passage, and if a human body feels heat (or external environment heat), the direction of the current can be adjusted to enable the side close to the skin to be refrigerated. If the human body feels cold (or the external environment is cold), the direction of the current is changed, so that the side close to the skin heats. Both cases are achieved by varying the current level. To change the heating or cooling effect. When current flows from p to n, the upper surface is a heating end, the lower surface is a cooling end, and the cold end and the hot end are changed by changing the direction of the current.
A third aspect of embodiments of the present application provides a use of a temperature adjustable flexible thermoelectric device in a textile.
The gentle thermoelectric device of adjustable temperature that this application third aspect provided, the gentle thermoelectric device of adjustable temperature that the preparation obtained can adjust the temperature as required, realizes keeping human heat preservation and resisting severe cold under the low temperature environment again, realizes human cooling and resists hot and warm under high temperature environment, consequently can wide application in the fabrics.
The following description will be given with reference to specific examples.
Example 1
Temperature-adjustable flexible thermoelectric device and preparation method thereof
Temperature-adjustable flexible thermoelectric device
A firstflexible substrate 1, a firstflexible electrode layer 2 laminated and bonded on the surface of the firstflexible substrate 1;
athermoelectric layer 3, thethermoelectric layer 3 comprising a plurality of pairs ofthermoelectric pairs 31 arranged at intervals, and thethermoelectric pairs 31 comprising p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312;
a secondflexible substrate 5, a secondflexible electrode layer 4 being laminated and bonded on a surface of the secondflexible substrate 5;
thethermoelectric layer 3 is bonded between the firstflexible electrode layer 2 and the secondflexible electrode layer 4, so that each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure; the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are connected in series through an external wire;
the p-type semiconductorthermoelectric unit 311 is a sheet-shaped member made of a bismuth telluride material;
the n-type semiconductorthermoelectric unit 312 is a sheet-like member made of bismuth telluride;
the material of the firstflexible electrode layer 2 is selected from conductive silver adhesive;
the material of the secondflexible electrode layer 4 is selected from conductive silver adhesive;
the material of the firstflexible substrate 1 is selected from polydimethylsiloxane;
the material of the secondflexible substrate 5 is selected from polydimethylsiloxane;
the dimensions of the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 are 1.4mm long, 1.4mm wide, and 1.0mm high;
the thickness of the firstflexible electrode layer 2 is 20 microns;
the thickness of the secondflexible electrode layer 4 is 20 microns;
the firstflexible substrate 1 is 0.3 mm;
the secondflexible substrate 5 is 0.3 mm.
Preparation method of temperature-adjustable flexible thermoelectric device
The method comprises the following steps:
(1) carrying out vacuum drying treatment on the firstflexible substrate 1 and the secondflexible substrate 5 for 10-15 minutes;
(2) providing a gridding mould frame, and respectively arranging the frames on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5; respectively coating the stretchable electrodes on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5 according to the grids of the die frame to obtain a first flexible electrode and a second flexible electrode; the first flexible electrode and the second flexible electrode are arranged in a staggered mode;
(3) arranging and combining first end faces ofthermoelectric pairs 31 on the surface of the first flexible electrode at intervals, and combining second flexible electrodes with second end faces of thethermoelectric pairs 31 to obtain a composite layer structure, wherein thethermoelectric pairs 31 comprise p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312, and each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure;
(4) and drying the composite layer structure at 60 ℃ for 4 hours to obtain the temperature-adjustable flexible thermoelectric device.
Example 2
Temperature-adjustable flexible thermoelectric device and preparation method thereof
Temperature-adjustable flexible thermoelectric device
A firstflexible substrate 1, a firstflexible electrode layer 2 laminated and bonded on the surface of the firstflexible substrate 1;
athermoelectric layer 3, thethermoelectric layer 3 comprising a plurality of pairs ofthermoelectric pairs 31 arranged at intervals, and thethermoelectric pairs 31 comprising p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312;
a secondflexible substrate 5, a secondflexible electrode layer 4 being laminated and bonded on a surface of the secondflexible substrate 5;
thethermoelectric layer 3 is bonded between the firstflexible electrode layer 2 and the secondflexible electrode layer 4, so that each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure; the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are connected in series through an external wire;
the p-type semiconductorthermoelectric unit 311 is a sheet-shaped member made of lead sulfide;
the n-type semiconductorthermoelectric unit 312 is a sheet-like member made of lead sulfide;
the material of the firstflexible electrode layer 2 is selected from gallium layers;
the material of the secondflexible electrode layer 4 is selected from gallium layers;
the material of the firstflexible substrate 1 is selected from hydrogenated styrene-butadiene block copolymers;
the material of the secondflexible substrate 5 is selected from hydrogenated styrene-butadiene block copolymers;
the dimensions of the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 are 1.2mm long, 1.2mm wide, and 0.9mm high;
the thickness of the firstflexible electrode layer 2 is 30 microns;
the thickness of the secondflexible electrode layer 4 is 30 microns;
the firstflexible substrate 1 is 0.3 mm;
the secondflexible substrate 5 is 0.3 mm.
Preparation method of temperature-adjustable flexible thermoelectric device
The method comprises the following steps:
(1) carrying out vacuum drying treatment on the firstflexible substrate 1 and the secondflexible substrate 5 for 10-15 minutes;
(2) providing a gridding mould frame, and respectively arranging the frames on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5; respectively coating the stretchable electrodes on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5 according to the grids of the die frame to obtain a first flexible electrode and a second flexible electrode; the first flexible electrode and the second flexible electrode are arranged in a staggered mode;
(3) arranging and combining first end faces ofthermoelectric pairs 31 on the surface of the first flexible electrode at intervals, and combining second flexible electrodes with second end faces of thethermoelectric pairs 31 to obtain a composite layer structure, wherein thethermoelectric pairs 31 comprise p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312, and each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure;
(4) and drying the composite layer structure for 4 hours at the temperature of 65 ℃ to obtain the temperature-adjustable flexible thermoelectric device.
Example 3
Temperature-adjustable flexible thermoelectric device and preparation method thereof
Temperature-adjustable flexible thermoelectric device
A firstflexible substrate 1, a firstflexible electrode layer 2 laminated and bonded on the surface of the firstflexible substrate 1;
athermoelectric layer 3, thethermoelectric layer 3 comprising a plurality of pairs ofthermoelectric pairs 31 arranged at intervals, and thethermoelectric pairs 31 comprising p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312;
a secondflexible substrate 5, a secondflexible electrode layer 4 being laminated and bonded on a surface of the secondflexible substrate 5;
thethermoelectric layer 3 is bonded between the firstflexible electrode layer 2 and the secondflexible electrode layer 4, so that each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure; the firstflexible electrode layer 2 and the secondflexible electrode layer 4 are connected in series through an external wire;
the p-type semiconductorthermoelectric unit 311 is a sheet-shaped member made of lead sulfide;
the n-type semiconductorthermoelectric unit 312 is a sheet-like member made of lead sulfide;
the material of the firstflexible electrode layer 2 is selected from gallium layers;
the material of the secondflexible electrode layer 4 is selected from gallium layers;
the material of the firstflexible substrate 1 is selected from hydrogenated styrene-butadiene block copolymers;
the material of the secondflexible substrate 5 is selected from hydrogenated styrene-butadiene block copolymers;
the dimensions of the p-type semiconductorthermoelectric element 311 and the n-type semiconductorthermoelectric element 312 are 1.2mm long, 1.2mm wide, and 0.9mm high;
the thickness of the firstflexible electrode layer 2 is 30 microns;
the thickness of the secondflexible electrode layer 4 is 30 microns;
the firstflexible substrate 1 is 0.3 mm;
the secondflexible substrate 5 is 0.3 mm.
Preparation method of temperature-adjustable flexible thermoelectric device
The method comprises the following steps:
(1) carrying out vacuum drying treatment on the firstflexible substrate 1 and the secondflexible substrate 5 for 10-15 minutes;
(2) providing a gridding mould frame, and respectively arranging the frames on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5; respectively coating the stretchable electrodes on the surfaces of the firstflexible substrate 1 and the secondflexible substrate 5 according to the grids of the die frame to obtain a first flexible electrode and a second flexible electrode; the first flexible electrode and the second flexible electrode are arranged in a staggered mode;
(3) arranging and combining first end faces ofthermoelectric pairs 31 on the surface of the first flexible electrode at intervals, and combining second flexible electrodes with second end faces of thethermoelectric pairs 31 to obtain a composite layer structure, wherein thethermoelectric pairs 31 comprise p-type semiconductorthermoelectric units 311 and n-type semiconductorthermoelectric units 312, and each p-type semiconductorthermoelectric unit 311 and each n-type semiconductorthermoelectric unit 312 form a pi-type series structure;
(4) and drying the composite layer structure at 70 ℃ for 4 hours to obtain the temperature-adjustable flexible thermoelectric device.
Determination of Properties and analysis of results
1. The temperature adjustable flexible thermoelectric device prepared in example 1, as shown in fig. 8 and 9, can be used as it is, and is a bendable and stretchable material.
2. The temperature change of the two surfaces of the thermoelectric material after being electrified is observed through infrared thermal imaging, the temperature of the heating surface of the thermoelectric material can be increased by about 5 ℃ within 10s, and the temperature of the cooling surface can be decreased by about 5 ℃ within 10 s. The temperature is quickly increased and decreased on one side, and the temperature control device has excellent temperature control performance.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
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