CN113224178B

Movatterモバイル変換

Info

Publication number: CN113224178B
Application number: CN202110467033.7A
Authority: CN
Inventors: 高文秀; 赵百通; 佐佐木实; 高向曈
Original assignee: YIXING YUYUAN ENERGY EQUIPMENT TECHNOLOGY DEVELOPMENT CO LTD
Current assignee: YIXING YUYUAN ENERGY EQUIPMENT TECHNOLOGY DEVELOPMENT CO LTD
Priority date: 2021-04-28
Filing date: 2021-04-28
Publication date: 2023-05-26
Anticipated expiration: 2041-04-28
Also published as: CN113224178A

Abstract

The invention discloses a production method of a silicon wafer, the silicon wafer produced by the method and a solar cell, which comprises the following steps: (1) storing the substrate; (2) substrate detection; (3) manufacturing a thin silicon wafer; (4) annealing the substrate Bao Guipian; (5) p-type or n-type diffusion of the substrate silicon wafer; (6) annealing the substrate silicon wafer forming the pn junction. The method can realize a silicon film with the thickness of less than 50 mu m, can save more than 80% of silicon materials theoretically, enables a silicon wafer to directly and naturally grow on the surface of a substrate, has uniform thickness, and can directly manufacture a solar cell on the substrate silicon wafer, thereby improving the power generation efficiency.

Description

Translated fromChinese

硅片的生产方法及利用该方法生产的硅片、太阳能电池Method for producing silicon wafer and silicon wafer and solar cell produced by the method

技术领域technical field

本发明涉及光伏，具体是硅片的生产方法及利用该方法生产的硅片、太阳能电池。The invention relates to photovoltaics, in particular to a method for producing silicon wafers and silicon wafers and solar cells produced by the method.

背景技术Background technique

硅片是晶体硅太阳电池的最基础部分。没有硅片，便不能产生光生电流，也就不能成为太阳能光伏发电电池，因此，硅片的制造是光伏太阳能电池最主要的工序之一。Silicon wafers are the most basic part of crystalline silicon solar cells. Without silicon wafers, photoelectric current cannot be generated, and solar photovoltaic cells cannot be produced. Therefore, the manufacture of silicon wafers is one of the most important processes for photovoltaic solar cells.

根据光伏硅基发电的基本原理，计算出最佳硅基电池的有效发电厚度约50μm。发电薄层极薄，可以有目的地导入锗、镓等直接跃迁光伏元素，具有潜在的突破理论光伏发电效率极限的可能。但是目前的工艺路线不可能实现大规模制作如此薄的硅片，很难实现产业化线切割。According to the basic principle of photovoltaic silicon-based power generation, the effective power generation thickness of the best silicon-based battery is calculated to be about 50 μm. The thin layer of power generation is extremely thin, and direct transition photovoltaic elements such as germanium and gallium can be introduced purposefully, which has the potential to break through the limit of theoretical photovoltaic power generation efficiency. However, the current process route cannot achieve large-scale production of such thin silicon wafers, and it is difficult to realize industrial wire cutting.

现有技术中，多晶或单晶硅片都必须经线切割的机械过程，而关键的发电pn结仅数微米，切割不可避免地对硅片表面造成硬性细微划伤，破坏了表面的硅晶格构造。In the prior art, polycrystalline or monocrystalline silicon wafers must undergo a mechanical process of wire cutting, and the key pn junction for power generation is only a few microns. Cutting will inevitably cause hard and fine scratches on the surface of the silicon wafer, destroying the silicon crystal on the surface grid structure.

发明内容Contents of the invention

为解决上述现有技术的缺陷，本发明提供硅片的生产方法及利用该方法生产的硅片和太阳能电池，利用本发明的方法能够实现50μm以下的硅薄膜，理论上可以省去80％以上的硅料，硅片直接自然生长在基板表面，厚度均匀，在基板硅片上直接制作太阳能电池，提高光伏发电效率。In order to solve the above-mentioned defects in the prior art, the present invention provides a production method of silicon wafers and silicon wafers and solar cells produced by the method. Using the method of the present invention, silicon thin films below 50 μm can be realized, and more than 80% of them can be saved theoretically. Silicon material, silicon wafers are directly and naturally grown on the surface of the substrate with uniform thickness, and solar cells are directly fabricated on the substrate silicon wafers to improve the efficiency of photovoltaic power generation.

为实现上述技术目的，本发明采用如下技术方案：一种硅片的生产方法，包括以下步骤In order to achieve the above-mentioned technical purpose, the present invention adopts the following technical scheme: a production method of a silicon chip, comprising the following steps

制作薄硅片：将基板固定在封闭系统内，向所述基板上注入液态硅料，并旋转所述基板使得所述液态硅料在所述基板上形成一层薄膜，在薄膜的上表面增加冷源使得薄膜自表面向下凝固，形成p型或者n型晶体薄硅片；Making thin silicon wafers: fix the substrate in a closed system, inject liquid silicon material on the substrate, and rotate the substrate so that the liquid silicon material forms a thin film on the substrate, and the upper surface of the film increases The cold source makes the film solidify from the surface down to form a p-type or n-type crystal thin silicon wafer;

薄硅片退火：将已经在基板上形成的薄硅片进行退火处理；Thin silicon wafer annealing: annealing the thin silicon wafer that has been formed on the substrate;

p型或n型扩散：当所述基板上的薄硅片为p型，进行以磷为扩散源的扩散以形成pn结；当所述基板上的薄硅片为n型，进行以硼为扩散源的扩散以形成pn结；P-type or n-type diffusion: when the thin silicon wafer on the substrate is p-type, perform diffusion using phosphorus as a diffusion source to form a pn junction; when the thin silicon wafer on the substrate is n-type, perform diffusion using boron as a diffusion source Diffusion of diffusion sources to form pn junctions;

pn结退火：将已经形成pn结的基板薄硅片进行退火处理，形成硅片。Pn junction annealing: annealing the thin silicon wafer of the substrate on which the pn junction has been formed to form a silicon wafer.

进一步地，在注入液态硅料时，包括以下步骤：将固态硅放置在加硅料系统中，保持固态硅恒温，再让固态硅快速升温到硅料熔点以上，此时固态硅变为液态硅料，所述加硅料系统将液态硅料注入到所述基板上。Further, when injecting the liquid silicon material, the following steps are included: placing the solid silicon in the silicon feeding system, keeping the temperature of the solid silicon at a constant temperature, and then rapidly raising the temperature of the solid silicon to above the melting point of the silicon material, at which point the solid silicon becomes liquid silicon material, the silicon material adding system injects liquid silicon material onto the substrate.

进一步地，在制作薄硅片的封闭系统中，氩气压强范围：40～80kPa，恒温温度范围：1250～1400℃；经加热装置保持固态硅恒温，温度范围：1300～1400℃，保持1～5秒后，经另一加热装置瞬间加热固态硅到1450℃以上。Furthermore, in the closed system for making thin silicon wafers, the argon pressure range: 40-80kPa, constant temperature range: 1250-1400°C; the solid silicon is kept at a constant temperature by the heating device, temperature range: 1300-1400°C, keep 1- After 5 seconds, the solid silicon is instantly heated to above 1450°C by another heating device.

进一步地，在封闭系统内，设置一甩片机构，所述甩片机构上固定有甩片平台，所述基板固定在所述甩片平台上，所述加硅料系统连接有氩气，氩气将液态硅料推至所述基板上，所述甩片机构带动所述甩片平台旋转运动。Further, in the closed system, a flake mechanism is set, the flake platform is fixed on the flake mechanism, the substrate is fixed on the flake platform, the silicon feeding system is connected with argon gas, and the argon The gas pushes the liquid silicon material onto the substrate, and the flake mechanism drives the flake platform to rotate.

进一步地，所述甩片机构带动所述甩片平台旋转的速度由慢到快进行变速运动，且在1～10秒之内达到设定转速，转速范围：300～5000rpm。Further, the speed at which the blade-throwing mechanism drives the rotation of the blade-throwing platform changes from slow to fast, and reaches the set speed within 1-10 seconds, and the speed range is 300-5000 rpm.

进一步地，所述晶体薄硅片与所述基板为一体式，所述晶体薄硅片为单晶硅片或者多晶硅片，厚度为几微米至几千微米。Further, the crystalline thin silicon wafer is integrated with the substrate, and the crystalline thin silicon wafer is a single crystal silicon wafer or a polycrystalline silicon wafer with a thickness of several micrometers to several thousand micrometers.

进一步地，所述晶体薄硅片是单晶硅片，该单晶硅片是极薄柱状高迁移率薄层。Further, the crystalline thin silicon wafer is a single crystal silicon wafer, and the single crystal silicon wafer is an extremely thin columnar high-mobility thin layer.

进一步地，在薄硅片退火时，氩气压强恒定范围：40～80kPa，恒温温度范围：1250～1400℃；退火时间范围：0.5～12小时，退火温度的最低温度为扩散形成pn结的温度，范围在800～1000℃。Further, when the thin silicon wafer is annealed, the argon pressure constant range: 40-80kPa, the constant temperature range: 1250-1400°C; the annealing time range: 0.5-12 hours, and the lowest annealing temperature is the temperature at which the pn junction is formed by diffusion , ranging from 800 to 1000°C.

一种硅片，所述硅片由上述所述方法生产。A silicon wafer produced by the method described above.

一种太阳能电池，所述太阳能电池包括上述硅片，所述硅片表面设置有一层减反射膜。A solar cell, the solar cell comprising the above-mentioned silicon chip, the surface of the silicon chip is provided with a layer of anti-reflection film.

综上所述，本发明取得了以下技术效果：In summary, the present invention has achieved the following technical effects:

1、本发明将基板固定在一封闭系统内，向基板上注入液态硅料，并旋转基板使得液态硅料在基板上形成一层薄膜，在薄膜的上表面增加冷源使得薄膜自表面向下凝固，形成p型或者n型晶体薄硅片，晶体薄硅片与基板为一体式，薄硅片是生长在基板上的，晶体薄硅片为单晶薄硅片或者多晶薄硅片，厚度为几微米至几千微米，自然生长厚度可极薄；1. In the present invention, the substrate is fixed in a closed system, liquid silicon material is injected onto the substrate, and the substrate is rotated so that the liquid silicon material forms a thin film on the substrate, and a cold source is added on the upper surface of the film to make the film downward from the surface Solidify to form a p-type or n-type crystal thin silicon wafer. The crystal thin silicon wafer is integrated with the substrate. The thin silicon wafer is grown on the substrate. The crystal thin silicon wafer is a single crystal thin silicon wafer or a polycrystalline thin silicon wafer. The thickness is several microns to thousands of microns, and the thickness of natural growth can be extremely thin;

2、本发明先保持固态硅的恒温，然后将固态硅瞬间升温成液态硅料，便于甩片；2. The present invention maintains the constant temperature of solid silicon first, and then instantly heats the solid silicon into liquid silicon material, which is convenient for flake removal;

3、本发明利用一甩片机构驱动基板旋转，带动基板上的液态硅料甩开形成一层厚度均匀的薄膜，此种甩片方式使得硅料完全接触基板，在基板上自然生长晶体；3. The present invention utilizes a flipper mechanism to drive the substrate to rotate, and drives the liquid silicon material on the substrate to shake off to form a thin film with uniform thickness. This flipping method makes the silicon material completely contact the substrate, and naturally grows crystals on the substrate;

4、本发明能够自动形成硅片，理论上可以实现50μm以下的硅薄膜，理论上可以省去80％以上的硅料，节省硅料，成本低，不需要切割等磨损，效率更高；4. The present invention can automatically form silicon wafers. In theory, it can realize a silicon film of less than 50 μm. In theory, it can save more than 80% of silicon materials, save silicon materials, low cost, no cutting and other wear, and higher efficiency;

5、本发明形成的硅片能够随意切割剪裁，以形成圆形、四边形、五边形、六边形、五角星等形状，形状可控、面积可控。5. The silicon wafer formed by the present invention can be cut and trimmed at will to form shapes such as circles, quadrangles, pentagons, hexagons, and pentagrams, with controllable shape and area.

附图说明Description of drawings

图1是本发明实施例提供的生产方法流程图；Fig. 1 is the production method flowchart that the embodiment of the present invention provides;

图2是本发明实施例提供的生产设备总结构示意图；Fig. 2 is a schematic diagram of the general structure of the production equipment provided by the embodiment of the present invention;

图3是本发明实施例提供的初始存放部分结构示意图；Fig. 3 is a schematic structural diagram of the initial storage part provided by the embodiment of the present invention;

图4是本发明实施例提供的检测部分结构示意图；Fig. 4 is a schematic structural diagram of the detection part provided by the embodiment of the present invention;

图5是本发明实施例提供的检测部分处的输送远离示意图；Fig. 5 is a schematic diagram of the transportation distance at the detection part provided by the embodiment of the present invention;

图6是本发明实施例提供的硅片形成部分结构示意图；Fig. 6 is a schematic diagram of the structure of the silicon wafer forming part provided by the embodiment of the present invention;

图7是本发明实施例提供的硅片形成部分工作原理示意图；Fig. 7 is a schematic diagram of the working principle of the silicon wafer forming part provided by the embodiment of the present invention;

图8是本发明实施例提供的退火部分结构示意图；Fig. 8 is a schematic diagram of the structure of the annealing part provided by the embodiment of the present invention;

图9是本发明实施例提供的pn结形成部分结构示意图；Fig. 9 is a schematic diagram of a partial structure of a pn junction provided by an embodiment of the present invention;

图10是本发明实施例提供的缓冲部分结构示意图。Fig. 10 is a schematic structural diagram of the buffer part provided by the embodiment of the present invention.

具体实施方式Detailed ways

以下结合附图对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with the accompanying drawings.

本具体实施例仅仅是对本发明的解释，其并不是对本发明的限制，本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改，但只要在本发明的权利要求范围内都受到专利法的保护。This specific embodiment is only an explanation of the present invention, and it is not a limitation of the present invention. Those skilled in the art can make modifications to this embodiment without creative contribution as required after reading this specification, but as long as they are within the rights of the present invention All claims are protected by patent law.

实施例：Example:

一种硅片的生产方法，包括以下步骤：A method for producing a silicon wafer, comprising the steps of:

(1)基板存放：用于事先存放一定数量的基板，此时的基板是目视合格的，利用机械手和输送机构运至下一步骤；(1) Substrate storage: It is used to store a certain number of substrates in advance. At this time, the substrates are visually qualified, and they are transported to the next step by manipulators and conveying mechanisms;

(2)基板检测：用于检测基板的缺陷，将不合格的基板剔除，合格的基板利用机械手和输送机构进入到下一步骤；(2) Substrate inspection: used to detect the defects of the substrate, reject the unqualified substrate, and use the manipulator and the conveying mechanism to enter the next step for the qualified substrate;

(3)制作薄硅片：将基板固定在一封闭系统内，向基板上注入液态硅料，并旋转基板使得液态硅料在基板上形成一层薄膜，在薄膜的上表面增加冷源使得薄膜自表面向下凝固，形成p型或者n型晶体薄硅片；(3) Making thin silicon wafers: fix the substrate in a closed system, inject liquid silicon material onto the substrate, and rotate the substrate so that the liquid silicon material forms a thin film on the substrate, and add a cold source on the upper surface of the film to make the film Solidify from the surface down to form a p-type or n-type crystal thin silicon wafer;

(4)薄硅片退火：将已经在基板上形成的薄硅片进行退火处理；其中，氩气压强恒定范围：40～80kPa，恒温温度范围：1250～1400℃；退火时间范围：0.5～12小时，退火温度的最低温度为扩散形成pn结的温度，范围在800～1000℃；(4) Thin silicon wafer annealing: annealing the thin silicon wafer formed on the substrate; wherein, the constant range of argon pressure: 40-80kPa, the constant temperature range: 1250-1400°C; the annealing time range: 0.5-12 Hours, the lowest annealing temperature is the temperature at which the pn junction is formed by diffusion, ranging from 800 to 1000°C;

(5)p型或n型扩散：当基板上的薄硅片为p型，进行以磷为扩散源的扩散以形成pn结；当基板上的薄硅片为n型，进行以硼为扩散源的扩散以形成pn结；(5) P-type or n-type diffusion: when the thin silicon wafer on the substrate is p-type, diffuse with phosphorus as the diffusion source to form a pn junction; when the thin silicon wafer on the substrate is n-type, perform diffusion with boron source diffusion to form a pn junction;

(6)pn结退火：将已经形成pn结的基板薄硅片进行退火处理，进一步消除内部应力。(6) Pn junction annealing: annealing the thin silicon wafer of the substrate on which the pn junction has been formed to further eliminate internal stress.

在介绍上述六个步骤之前，先介绍一下所用到的设备：如图2所示，包括依次设置的初始存放部分R1、检测部分R2、硅片形成部分R3、退火部分R4、pn结形成部分R5、缓冲部分R6，以及设置于相邻部分之间的输送机构；六个部分分别对应上述六个步骤；硅片形成部分R3内设有加硅料系统7、甩片机构8和甩片平台9，甩片机构8驱动甩片平台9旋转运动，加硅料系统7将液态硅料注入在甩片平台9上的基板1上。Before introducing the above six steps, let me introduce the equipment used: as shown in Figure 2, it includes the initial storage part R1, the detection part R2, the silicon wafer forming part R3, the annealing part R4, and the pn junction forming part R5. , the buffer part R6, and the conveying mechanism arranged between the adjacent parts; the six parts respectively correspond to the above six steps; the silicon wafer forming part R3 is provided with asilicon feeding system 7, aflake mechanism 8 and a flake platform 9 , theflake mechanism 8 drives the flake platform 9 to rotate, and thesilicon feeding system 7 injects liquid silicon material onto thesubstrate 1 on the flake platform 9 .

其中，每一个部分均包括一腔体，每一个腔体的入口端和出口端均设置有一个阀门，阀门使得对应腔体形成封闭系统，阀门能够打开或者关闭以使得相应腔体能够打开运输基板或者封闭起来实施基板硅片、扩散或退火等生产工艺，位于上一腔体出口端的阀门与位于下一腔体入口端的阀门之间设有输送机构，输送机构设置有多个，用于将上一部分处理好的基板送到下一部分继续处理或者直接输送出成品基板硅片。Wherein, each part includes a cavity, each cavity is provided with a valve at the inlet end and the outlet end, the valve makes the corresponding cavity form a closed system, and the valve can be opened or closed so that the corresponding cavity can be opened to transport the substrate Or close it up to implement production processes such as substrate silicon wafers, diffusion or annealing. A conveying mechanism is provided between the valve at the outlet of the previous chamber and the valve at the inlet of the next chamber. There are multiple conveying mechanisms for moving the upper A part of the processed substrate is sent to the next part for further processing or the finished substrate silicon wafer is directly delivered.

进一步阐述如下：输送机构包括初始输送机构p1、第一输送机构a2、第二输送机构b2、第三输送机构c2、第四输送机构d2、第五输送机构e2、第六输送机构f2、第七输送机构g2、第八输送机构h2。输送机构上还设置有缓冲通道，具体是各自对应的第一缓冲通道a3、第二缓冲通道b3、第三缓冲通道c3、第四缓冲通道d3、第五缓冲通道e3、第六缓冲通道f3、第七缓冲通道g3。Further elaboration is as follows: the conveying mechanism includes the initial conveying mechanism p1, the first conveying mechanism a2, the second conveying mechanism b2, the third conveying mechanism c2, the fourth conveying mechanism d2, the fifth conveying mechanism e2, the sixth conveying mechanism f2, the seventh conveying mechanism Conveying mechanism g2, eighth conveying mechanism h2. The conveying mechanism is also provided with buffer channels, specifically the corresponding first buffer channel a3, second buffer channel b3, third buffer channel c3, fourth buffer channel d3, fifth buffer channel e3, sixth buffer channel f3, The seventh buffer channel g3.

进一步地，相关硬件设备包括基板检测设备用于检测基板是否存在缺陷、多个输送机构用于输送基板、自动隔离阀门控制设备用于控制阀门的开闭、激光加热设备用于在硅片形成部分R3中加热硅片、加硅料设备用于向硅片形成部分R3中输送液态的硅料、防热辐射照相机用于采集图像、温度传感器用于感知内部的温度、腔体恒温加热设备用于保证腔体内的温度、抽取真空设备用于将腔体抽真空、充氩气设备用于向腔体内充入氩气、甩片设备用于将液态硅旋转散开和扩散设备等。本设备所有自动化设备都有PLC程序控制，代替人工，实现自动化生产，提高生产效率。Further, the relevant hardware equipment includes substrate detection equipment for detecting whether there is a defect in the substrate, multiple conveying mechanisms for conveying the substrate, automatic isolation valve control equipment for controlling the opening and closing of the valve, and laser heating equipment for forming a part on the silicon wafer. In R3, silicon wafer heating and silicon feeding equipment are used to transport liquid silicon material to the silicon wafer forming part R3, the heat-resistant radiation camera is used to collect images, the temperature sensor is used to sense the internal temperature, and the cavity constant temperature heating equipment is used for Guarantee the temperature in the cavity, the vacuum extraction equipment is used to evacuate the cavity, the argon filling equipment is used to fill the cavity with argon, the flinger equipment is used to rotate and disperse the liquid silicon and the diffusion equipment, etc. All automation equipment of this equipment is controlled by PLC program, which replaces labor to realize automatic production and improve production efficiency.

下面依次介绍上述六个步骤：The above six steps are described in sequence below:

如图3所示，此步骤涉及到初始存放部分R1，初始存放部分R1包括一第一腔体a1，该腔体的主要功能是存放基板，让目视合格基板根据生产流程进入已设置好的下一步程序。第一腔体a1内固定有一存放架21，存放架21用于存放基板1，根据基板厚度的不同，支架上可存放基板100～10000片。As shown in Figure 3, this step involves the initial storage part R1. The initial storage part R1 includes a first cavity a1. The main function of this cavity is to store substrates, allowing visually qualified substrates to enter the set Next procedure. Astorage rack 21 is fixed in the first cavity a1, and thestorage rack 21 is used to store thesubstrates 1. According to the thickness of the substrates, 100-10000 substrates can be stored on the rack.

具体的，第一腔体a1连接有抽真空装置(未图示)、第一加热装置31、氩气气源(未图示)。Specifically, the first chamber a1 is connected with a vacuum device (not shown), afirst heating device 31 , and an argon gas source (not shown).

具体的，第一腔体a1的入口端处设置有初始封闭阀门P，初始封闭阀门P的外部连接初始输送机构p1，初始输送机构p1将基板1输送到第一腔体a1内；第一腔体a1的出口端处设置有第一封闭阀门A(下述阀门A)，阀门A的外部连接有第一输送机构a2，第一输送机构a2将基板1输送到下一部分。Specifically, an initial closing valve P is provided at the inlet end of the first cavity a1, and the exterior of the initial closing valve P is connected with an initial delivery mechanism p1, and the initial delivery mechanism p1 transports thesubstrate 1 into the first cavity a1; the first cavity The outlet end of the body a1 is provided with a first closing valve A (valve A described below), and the outside of the valve A is connected with a first conveying mechanism a2, and the first conveying mechanism a2 conveys thesubstrate 1 to the next part.

在此步骤中，外部将基板1放在PLC控制的自动初始输送机构p1上，初始输送机构p1将基板运输到初始封闭阀门P处，初始封闭阀门P(下述阀门P)感应到基板的存在，自动打开阀门P，通过初始封闭阀门P，进入到第一腔体a1内，并有机械手a(未图示)将基板有序放到存放支架21上。在存放基板过程中，其他自动阀门是一直处于关闭状态。当完成存放程序后，即基板存放数量达到设定值时，存放腔体将停止运转初始输送机构p1，阀门P关闭，直到下次存放基板程序开启，阀门P才打开。In this step, the outside puts thesubstrate 1 on the automatic initial conveying mechanism p1 controlled by PLC, and the initial conveying mechanism p1 transports the substrate to the initial closed valve P, and the initial closed valve P (valve P described below) senses the presence of the substrate , automatically open the valve P, enter the first cavity a1 by initially closing the valve P, and have the robot a (not shown) place the substrates on thestorage rack 21 in an orderly manner. During the storage of substrates, other automatic valves are always closed. When the storage program is completed, that is, when the number of substrates stored reaches the set value, the storage chamber will stop the initial conveying mechanism p1, and the valve P will be closed. The valve P will not be opened until the next substrate storage program is started.

阀门P关闭后，抽真空装置(未图示)启动，对第一腔体a1进行抽真空，真空度达到10Pa以下时，启动充氩气程序，并对第一腔体a1内部进行加热，使第一腔体a1内保持恒温恒压。第一腔体a1内氩气压强范围：30～80kPa，温度范围：300～600℃。当恒温和恒压达到设定时间时，下一部分的检测部分R2程序启动，将支架上的基板通过机械手可被第一输送机构a2一片一片的运输到下一部分。After the valve P is closed, the vacuuming device (not shown) is activated to evacuate the first cavity a1, and when the vacuum degree reaches below 10Pa, start the argon filling program, and heat the inside of the first cavity a1, so that A constant temperature and pressure are maintained in the first cavity a1. Argon pressure range in the first cavity a1: 30-80kPa, temperature range: 300-600°C. When the constant temperature and constant pressure reach the set time, the detection part R2 program of the next part starts, and the substrates on the bracket can be transported one by one by the first conveying mechanism a2 to the next part through the robot arm.

如图4所示，此步骤涉及到检测部分R2，检测部分R2内包括一第二腔体b1，第二腔体b1内设有用于检测基板1的检测平台22；第二腔体b1的入口端设有第二封闭阀门B(下述阀门B)，阀门B的外部对接第一输送机构a2；第二腔体b1的出口端设有第三封闭阀门C(下述阀门C)，阀门C的外部连接有第二输送机构b2,第二输送机构b2将基板1输送到下一部分。As shown in Figure 4, this step involves the detection part R2, which includes a second cavity b1, the second cavity b1 is provided with adetection platform 22 for detecting thesubstrate 1; the entrance of the second cavity b1 There is a second closed valve B (valve B below) at the end, and the outside of the valve B is connected to the first conveying mechanism a2; the outlet end of the second cavity b1 is provided with a third closed valve C (valve C below), and the valve C There is a second conveying mechanism b2 connected to the outside of , and the second conveying mechanism b2 conveys thesubstrate 1 to the next part.

第一输送机构a2设有第一缓冲通道a3,第二输送机构b2设有第二缓冲通道b3。The first conveying mechanism a2 is provided with a first buffer passage a3, and the second conveying mechanism b2 is provided with a second buffer passage b3.

检测部分R2主要功能是质检设备(未图示)进一步检测基板在300～600℃温度下是否存在缺陷，合格基板进入下一步流程，不合格基板由专门通道(未图示)运输出第二腔体b1，进行破碎、重新烧结和重新压模。检测设备精确度为微米级别，将大大提高光伏组件质量，提高光伏组件的光电转换效率。第二腔体b1环境：氩气强度为100kPa。The main function of the detection part R2 is quality inspection equipment (not shown) to further detect whether there are defects in the substrate at a temperature of 300-600 ° C. The qualified substrate enters the next step process, and the unqualified substrate is transported out of the second process through a special channel (not shown). Cavity b1, for crushing, re-sintering and re-molding. The accuracy of the detection equipment is at the micron level, which will greatly improve the quality of photovoltaic modules and improve the photoelectric conversion efficiency of photovoltaic modules. The environment of the second cavity b1: the intensity of argon gas is 100kPa.

在此步骤中，如图5所示，具体包括以下步骤：In this step, as shown in Figure 5, it specifically includes the following steps:

在第一腔体a1内，在恒温恒压的基板由机械手a根据支架上存放的基板顺序，机械手a依次将基板放入到第一缓冲通道a3的第一输送机构a2上。PLC控制的自动阀门打开顺序：第一腔体a1内机械手a“搬运”基板，当机械手a运行到设定位置，自动阀门A收到感应器信号，第一腔体a1内的机械手a将基板放入到第一缓冲通道a3内，阀门A自动打开。机械手a将基板放入到第一输送机构a2上，机械手a撤出第一缓冲通道a3，机械手a撤出到设定位置，阀门A关闭。第一输送机构a2将基板运输到自动阀门B感应到的设定位置时，阀门B自动打开，有第二腔体b1内的机械手b将第一缓冲通道a3中的基板放置到第二腔体b1内，等待检测，阀门B自动关闭，质检设备(未图示)开启检测基板程序。In the first cavity a1, the substrates at constant temperature and pressure are placed on the first conveying mechanism a2 of the first buffer channel a3 by the robot arm a according to the order of the substrates stored on the rack. The opening sequence of the automatic valve controlled by PLC: the manipulator a in the first chamber a1 "carries" the substrate, when the manipulator a moves to the set position, the automatic valve A receives the sensor signal, and the manipulator a in the first chamber a1 will move the substrate Put it into the first buffer channel a3, the valve A will open automatically. Manipulator a puts the substrate on the first conveying mechanism a2, manipulator a withdraws from the first buffer channel a3, manipulator a withdraws to the set position, and valve A closes. When the first conveying mechanism a2 transports the substrate to the set position sensed by the automatic valve B, the valve B is automatically opened, and the robot b in the second cavity b1 places the substrate in the first buffer channel a3 into the second cavity In b1, waiting for detection, valve B is automatically closed, and the quality inspection equipment (not shown) starts the detection process of the substrate.

本设备在第二腔体b1内质检基板，主要的目的是为制作高质量的光伏电池组件。质检设备设定一定的基板质检标准，符合标准的合格基板将进入下一个腔体进行后续的程序，不合格基板将被送到专门通道退出第二腔体b1。基板质检标准如下：外观形状-----无破片、无裂纹、无缺角、无缺口、无污点和无脱落等；外观尺寸------边长偏差<±0.5mm，对角线偏差<±0.3mm；厚度尺寸------凹凸痕偏差<±10um，翘曲度<50um，弯曲度<75um，厚度变化量<5％标称厚度；崩边要求-----长<1mm，深<0.5mm，个数≤2个；相邻两边直线垂直度<90±0.3°。不符合上述标准的基板将由专门通道退出第二腔体b1，符合上述标准的基板将进入下一个硅片制作腔体。This equipment checks the quality of the substrate in the second chamber b1, the main purpose of which is to produce high-quality photovoltaic cell modules. The quality inspection equipment sets certain substrate quality inspection standards. The qualified substrates that meet the standards will enter the next chamber for subsequent procedures, and the unqualified substrates will be sent to a special channel to exit the second chamber b1. Substrate quality inspection standards are as follows: Appearance shape ----- no fragments, no cracks, no corners, no gaps, no stains and no falling off, etc.; appearance size --- side length deviation <±0.5mm, diagonal Line deviation <±0.3mm; Thickness dimension --- Concave-convex mark deviation <±10um, warpage <50um, curvature <75um, thickness variation <5% of nominal thickness; chipping requirements---- - Length < 1mm, depth < 0.5mm, number ≤ 2; perpendicularity of straight lines on two adjacent sides < 90±0.3°. Substrates that do not meet the above criteria will exit the second cavity b1 through a special channel, and substrates that meet the above criteria will enter the next silicon wafer fabrication cavity.

上述步骤形成的晶体薄硅片与基板为一体式，薄硅片是生长在基板上的，晶体薄硅片为单晶薄硅片或者多晶薄硅片，厚度为10～2000um。当晶体薄硅片是单晶硅片时，该单晶硅片是极薄柱状高迁移率薄层。The crystalline thin silicon wafer formed in the above steps is integrated with the substrate. The thin silicon wafer is grown on the substrate. The crystalline thin silicon wafer is a single crystal thin silicon wafer or a polycrystalline thin silicon wafer with a thickness of 10-2000um. When the crystalline thin silicon wafer is a single crystal silicon wafer, the single crystal silicon wafer is an extremely thin columnar high-mobility thin layer.

如图6所示，此步骤涉及到硅片形成部分R3，硅片形成部分R3包括一第三腔体c1，第三腔体c1内设有甩片平台9和加硅料系统7，加硅料系统7将硅料注入在甩片平台9上的基板上，甩片平台9旋转运动。进一步地，甩片平台9连接有甩片机构8，驱动甩片平台9旋转；第三腔体c1内还设有第二加热装置(如图6中示出的第一激光加热51、第二激光加热52、恒温加热器32)、第一温度传感器41、图像采样设备采用相机6、真空抽取机构(未图示)和充氩气系统(未图示)。As shown in Figure 6, this step involves the silicon wafer forming part R3, the silicon wafer forming part R3 includes a third chamber c1, the third chamber c1 is provided with a flake platform 9 and asilicon feeding system 7, and silicon feeding Thematerial system 7 injects the silicon material onto the substrate on the flake platform 9, and the flake platform 9 rotates. Further, the flake platform 9 is connected with aflake mechanism 8, which drives the flake platform 9 to rotate; the third cavity c1 is also provided with a second heating device (thefirst laser heating 51, the second as shown in Fig. 6Laser heating 52, constant temperature heater 32),first temperature sensor 41, image sampling equipment adoptscamera 6, vacuum extraction mechanism (not shown) and argon gas filling system (not shown).

其中，甩片机构8可以采用伺服电机、步进电机等结构或者其他结构来驱动甩片平台9旋转。Wherein, theflake mechanism 8 may adopt a structure such as a servo motor, a stepping motor, or other structures to drive the flake platform 9 to rotate.

上述各个硬件设备的作用如下：加硅料系统7作用是经过称重的硅料(根据硅片的厚度和基板面积计算出用硅料的重量，设定为固定值)，加硅料系统7利用第一激光加热51，使硅料保持恒温，在第二激光加热52协助下，硅料温度快速上升到硅料熔点以上，固态硅变为液态硅，并将液态硅注入到甩片机构上基板上；第一温度传感器41检测封闭系统内c的温度，保持温度恒定；第一激光加热51作用是硅料保持恒温提供热能，第二激光加热52作用是固态硅变为液态硅提供瞬间热量，它们是通过调节激光功率和激光脉冲达到所需的热量；相机6即防热辐射照相机作用是记录甩片的每个细节和过程，便于完善生产技术；恒温加热器32作用是第三腔体c1保持恒温提供热量；甩片机构8的主要作用是将基板上的液态硅在一定的转速下基板上形成所需硅片。The functions of the above-mentioned various hardware devices are as follows: the function of the siliconmaterial adding system 7 is the weighed silicon material (the weight of the silicon material is calculated according to the thickness of the silicon wafer and the substrate area, and is set as a fixed value), and the siliconmaterial adding system 7 Use thefirst laser heating 51 to keep the silicon material at a constant temperature. With the assistance of thesecond laser heating 52, the temperature of the silicon material rises rapidly above the melting point of the silicon material, and the solid silicon becomes liquid silicon, and the liquid silicon is injected into the flinger mechanism On the substrate; thefirst temperature sensor 41 detects the temperature of c in the closed system to keep the temperature constant; thefirst laser heating 51 is used to provide thermal energy for the silicon material to maintain a constant temperature, and thesecond laser heating 52 is used to change solid silicon into liquid silicon to provide instant heat , they achieve the required heat by adjusting the laser power and laser pulses; the function of thecamera 6, that is, the heat-resistant radiation camera, is to record every detail and process of the flakes, so as to facilitate the improvement of production technology; the function of theconstant temperature heater 32 is the third cavity c1 maintains a constant temperature to provide heat; the main function of theflinger mechanism 8 is to form the required silicon wafer on the substrate with the liquid silicon on the substrate at a certain speed.

进一步地，第三腔体c1的入口端设有第四封闭阀门D，第四封闭阀门D对接第二输送机构b2；第三腔体c1的出口端设有第五封闭阀门E，第五封闭阀门E的外部设有第三输送机构c2，第三输送机构c2将带有硅片的基板1运输到下一部分。Further, the inlet end of the third cavity c1 is provided with a fourth closing valve D, and the fourth closing valve D is connected to the second conveying mechanism b2; the outlet end of the third cavity c1 is provided with a fifth closing valve E, and the fifth closing valve D A third conveying mechanism c2 is provided outside the valve E, and the third conveying mechanism c2 transports thesubstrate 1 with the silicon wafer to the next part.

硅片形成部分R3主要功能是在合格的基板表面进行甩出硅片，根据硅片的使用要求不同，甩出不同厚度的硅片。第三腔体c1内的环境要求较高，制作硅片腔体的整个系统是封闭式，用真空泵(未图示)对整个系统进行抽真空，然后充入高纯度氩气(未图示)；然后，再进行抽真空、充高纯度氩气，这样如此反复多次清洗这个系统，并使整个系统保持在高纯氩气氛围中，形成硅片过程中才不被外部环境污染。第三腔体c1内氩气压强保持要求范围：40～80kPa，恒温温度要求：1250～1400℃，根据硅片厚度不同，恒温温度不同。The main function of the silicon wafer forming part R3 is to throw out silicon wafers on the surface of qualified substrates, and throw out silicon wafers of different thicknesses according to different requirements for the use of silicon wafers. The environment requirements in the third cavity c1 are relatively high. The whole system for making the silicon wafer cavity is closed, and the whole system is evacuated by a vacuum pump (not shown), and then filled with high-purity argon gas (not shown). ; Then, vacuumize and fill with high-purity argon, so that the system is cleaned repeatedly, and the entire system is kept in a high-purity argon atmosphere, so that it will not be polluted by the external environment during the formation of silicon wafers. The argon pressure in the third chamber c1 maintains a required range of 40-80kPa, and a constant temperature requirement of 1250-1400°C. The constant temperature varies according to the thickness of the silicon wafer.

在此步骤中，如图7所示，基板检测腔体的合格基板进入第三腔体c1，自动运输程序与上述输送类同，在此将不再累赘叙述。具体步骤如下：In this step, as shown in FIG. 7 , qualified substrates in the substrate inspection chamber enter the third chamber c1 , and the automatic transportation procedure is similar to the above-mentioned transportation, which will not be repeated here. Specific steps are as follows:

(31)由第二腔体b1内合格基板经过第二缓冲通道b3通过第二输送机构b2进入第三腔体c1，基板经机械手c(未图示)放置甩片机构平台的指定位置上，并固定在平台上；此时，基板在1250～1400℃温度的环境中，自身上升到此温度，防止液态硅滴到基板上瞬间发生部分液态硅凝固；(31) The qualified substrate in the second cavity b1 enters the third cavity c1 through the second buffer channel b3 through the second conveying mechanism b2, and the substrate is placed on the designated position of the flake mechanism platform by the robot c (not shown), And fix it on the platform; at this time, the substrate itself rises to this temperature in an environment with a temperature of 1250-1400 ° C, so as to prevent liquid silicon from dripping onto the substrate and part of the liquid silicon solidifies instantly;

(32)定量的硅料进入加料系统中，例如50微米厚度，边长210*210mm²的硅片需要硅料的重量约是5.2g；(32) Quantitative silicon material enters the feeding system, for example, a silicon chip with a thickness of 50 microns and a^side length of 210*210mm requires about 5.2g of silicon material;

(33)硅料进入加料系统后经第一激光加热51保持恒温，温度范围：1300～1400℃；(33) After the silicon material enters the feeding system, it is heated by thefirst laser 51 to maintain a constant temperature, and the temperature range is 1300-1400 °C;

(34)保持1～5秒后，第二激光加热52瞬间加热硅料到1450℃以上，固态硅瞬间变成液态硅；(34) After keeping for 1 to 5 seconds, thesecond laser heating 52 instantly heats the silicon material to above 1450°C, and the solid silicon instantly becomes liquid silicon;

(35)硅料加入系统接有氩气充气口，脉冲氩气将液态硅推至甩片机构平台上的基板上；(35) The silicon material adding system is connected with an argon gas charging port, and the pulsed argon gas pushes the liquid silicon to the substrate on the platform of the flake mechanism;

(36)甩片快速启动，精确控制甩片机构动作，速度由慢到快进行变速运动；甩片机构带动平台上的基板进行转动甩片，在1～10秒之内达到设定转速，转速范围：300～5000rpm；(36) The flinger starts quickly, precisely controls the action of the flinger mechanism, and the speed changes from slow to fast; the flinger mechanism drives the substrate on the platform to rotate the flake, and reaches the set speed within 1 to 10 seconds. Range: 300～5000rpm;

(37)当液态硅在基板上被甩开后形成一层薄膜，在薄膜的上表面增加冷源，冷源为低于1000℃的固体或者惰性气体；薄膜自表面向下凝固，使融化的硅料在基板材料上形成p型或者n型的一层晶体薄硅片；形成的硅片厚度均匀性一致，为多晶或单晶薄硅片。(37) When the liquid silicon is thrown away on the substrate to form a thin film, a cold source is added on the upper surface of the film, and the cold source is a solid or an inert gas below 1000°C; the thin film solidifies from the surface downward, making the melted The silicon material forms a p-type or n-type crystalline thin silicon wafer on the substrate material; the thickness of the formed silicon wafer is uniform, and it is a polycrystalline or single crystal thin silicon wafer.

本步骤根据工艺过程中设置好基板预热温度、硅料的融化温度和甩片机械精密动作方式和动作参数，使基板的一面完全接触液态硅，完成基板和硅片紧密接触。制作硅片的厚度与液态硅温度、基板温度、冷源温度、甩片机构转速等技术参数有关。基板上制作的硅片越薄，需要的基板温度、液态硅温度和甩片机构转速等参数越高。In this step, according to the preheating temperature of the substrate, the melting temperature of the silicon material, and the precise action mode and action parameters of the flake machine, one side of the substrate is completely in contact with the liquid silicon, and the close contact between the substrate and the silicon wafer is completed. The thickness of the silicon wafer is related to technical parameters such as liquid silicon temperature, substrate temperature, cold source temperature, and the speed of the wafer throwing mechanism. The thinner the silicon wafer produced on the substrate, the higher the required parameters such as substrate temperature, liquid silicon temperature, and spinning mechanism speed.

(4)薄硅片退火：将已经形成薄硅片的基板进行退火处理；其中，氩气压强恒定范围：40～80kPa，恒温温度范围：1250～1400℃；退火时间范围：0.5～12小时，退火温度的最低温度为扩散形成pn结的温度，范围在800～1000℃；(4) Thin silicon wafer annealing: annealing the substrate that has formed a thin silicon wafer; wherein, the constant range of argon pressure: 40-80kPa, the constant temperature range: 1250-1400°C; the annealing time range: 0.5-12 hours, The lowest temperature of the annealing temperature is the temperature at which the pn junction is formed by diffusion, ranging from 800 to 1000°C;

如图8所示，此步骤涉及退火部分R4，退火部分R4包括第四腔体d1，第四腔体d1内设有退火支架23，退火支架23上盛放带有硅片的基板1；第四腔体d1内还设有第三加热装置(退火加热器33和退火加热器34)和第二温度传感器42；第四腔体d1的入口端设有第六封闭阀门F，第六封闭阀门F对接第三输送机构c2；第四腔体d1的出口端设有第七封闭阀门G，第七封闭阀门G的外部设有第四输送机构d2和第五输送机构e2，第四输送机构d2与第五输送机构e2之间设有第八封闭阀门H，第五输送机构e2将退火后的基板1输送到下一部分。As shown in Figure 8, this step involves the annealing part R4, the annealing part R4 includes a fourth chamber d1, the fourth chamber d1 is provided with anannealing support 23, and theannealing support 23 holds asubstrate 1 with a silicon wafer; Also be provided with the 3rd heating device (annealingheater 33 and annealing heater 34) and thesecond temperature sensor 42 in the four cavity d1; F docks with the third conveying mechanism c2; the outlet end of the fourth cavity d1 is provided with a seventh closed valve G, and the outside of the seventh closed valve G is provided with a fourth conveying mechanism d2 and a fifth conveying mechanism e2, and the fourth conveying mechanism d2 An eighth closed valve H is provided between the fifth conveying mechanism e2, and the fifth conveying mechanism e2 conveys the annealedsubstrate 1 to the next part.

退火部分R4主要功能是基板上形成的硅片根据温度曲线进行降低温度，去除基板、基板和硅片接触面、硅片等应力。第四腔体d1中设备包含退火加热器、温度传感器和退火支架。第四腔体d1中的内部环境要求和第三腔体c1中一致。使用前也是用真空泵对整个系统进行抽真空，然后充入高纯度氩气；然后，再进行抽真空、充高纯度氩气，这样如此反复多次清洗这个系统，并使整个系统保持在高纯氩气氛围中，形成硅片过程中不被外部环境污染。第四腔体d1内氩气压强和恒温温度也和第三腔体c1保持一致，目的是硅片和基板的质量在从第三腔体c1中运输到第四腔体d1过程中不受压强和温度的影响。氩气压强要求恒定，设置范围在40～80kPa内，恒温温度设置范围在1250～1400℃内，为保证硅片的性能，第四腔体d1退火前的温度和第三腔体c1内保持一致。此第四腔体d1中退火支架可放置带硅片的基板数量范围：100～10000片。The main function of the annealing part R4 is to reduce the temperature of the silicon wafer formed on the substrate according to the temperature curve, and remove the stress of the substrate, the contact surface between the substrate and the silicon wafer, and the silicon wafer. The equipment in the fourth cavity d1 includes an annealing heater, a temperature sensor and an annealing support. The internal environment requirements in the fourth chamber d1 are consistent with those in the third chamber c1. Before use, the whole system is also evacuated with a vacuum pump, and then filled with high-purity argon; then, vacuumed and filled with high-purity argon, so that the system is cleaned repeatedly and the whole system is kept at high purity. In the argon atmosphere, the process of forming silicon wafers will not be polluted by the external environment. The argon pressure and constant temperature in the fourth chamber d1 are also kept the same as those in the third chamber c1, so that the quality of silicon wafers and substrates will not be under pressure during transportation from the third chamber c1 to the fourth chamber d1 Influence of strength and temperature. The argon pressure is required to be constant, the setting range is within 40-80kPa, and the constant temperature setting range is within 1250-1400°C. In order to ensure the performance of the silicon wafer, the temperature before annealing in the fourth chamber d1 is consistent with that in the third chamber c1 . The annealing support in the fourth cavity d1 can place substrates with silicon wafers in a range of 100-10000 wafers.

当形成硅片的基板由第三腔体c1内经过第三缓冲通道c3通过第三输送机构c2进入第四腔体d1，硅片经机械手d放置在退火支架上。当硅片的数量达到设定值时，根据形成硅片和基板的厚度不同，从第四腔体d1中恒温温度开始下降的退火温度曲线和退火时间有所不同，退火时间范围：0.5～12小时，退火温度的最低温度为扩散形成pn结的温度，范围在800～1000℃。在基板表面已形成薄硅片进入退火腔体内进行长晶热处理，同时消除凝固时所形成的内应力，以提高后续工艺的制作合格率。When the substrate forming the silicon wafer enters the fourth chamber d1 from the third chamber c1 through the third buffer channel c3 through the third conveying mechanism c2, the silicon wafer is placed on the annealing support by the manipulator d. When the number of silicon wafers reaches the set value, the annealing temperature curve and annealing time are different from the constant temperature in the fourth cavity d1 according to the thickness of the silicon wafers and the substrate. The annealing time range: 0.5 ~ 12 Hours, the lowest temperature of the annealing temperature is the temperature at which the pn junction is formed by diffusion, and the range is 800-1000°C. Thin silicon wafers have been formed on the surface of the substrate and enter the annealing chamber for crystal growth heat treatment, and at the same time eliminate the internal stress formed during solidification to improve the production pass rate of subsequent processes.

如图9所示，此步骤涉及pn结形成部分R5，pn结形成部分R5包括一第五腔体e1，第五腔体e1内设有pn结制作系统10；第五腔体e1的入口端设有第九封闭阀门J，第九封闭阀门J对接第五输送机构e2；第五腔体e1的出口端设有第十封闭阀门K，第十封闭阀门K的外部设有第六输送机构f2和第七输送机构g2，第六输送机构f2和第七输送机构g2之间设有第十一封闭阀门L，第七输送机构g2将形成pn结的基板1输送到下一部分。As shown in Figure 9, this step involves the pn junction forming part R5, the pn junction forming part R5 includes a fifth chamber e1, the fifth chamber e1 is provided with a pnjunction manufacturing system 10; the inlet port of the fifth chamber e1 The ninth closed valve J is provided, and the ninth closed valve J is connected to the fifth conveying mechanism e2; the outlet end of the fifth cavity e1 is provided with a tenth closed valve K, and the outside of the tenth closed valve K is provided with a sixth conveying mechanism f2 An eleventh closing valve L is provided between the seventh conveying mechanism g2, the sixth conveying mechanism f2 and the seventh conveying mechanism g2, and the seventh conveying mechanism g2 conveys the pn junction-formedsubstrate 1 to the next part.

pn结形成部分R5主要功能是将已完成退火的硅片进行p型扩散或者n型扩散，即在pn结制作系统10内进行扩散。当基板上极薄硅片为p型，在此腔体内需进行以磷为扩散源的扩散；基板上极薄硅片为n型，在此腔体内需进行以硼为扩散源的扩散。不同扩散类型，使用扩散设备不同，扩散设备采用市场型号即可。The main function of the pn junction forming part R5 is to perform p-type or n-type diffusion on the annealed silicon wafer, that is, perform diffusion in the pnjunction fabrication system 10 . When the ultra-thin silicon wafer on the substrate is p-type, diffusion using phosphorus as the diffusion source is required in this cavity; the ultra-thin silicon wafer on the substrate is n-type, and diffusion using boron as the diffusion source is required in this cavity. Different diffusion types require different diffusion equipment, and the diffusion equipment can use market models.

为防止第五腔体e1内的扩散气体对整个生产线和外部环境造成影响，退火后的带有极薄硅片的基板从第四腔体d1运输到第五腔体e1内经过了第四缓冲通道d3和第五缓冲通道e3。在第四腔体d1内，退火后的硅片由机械手d根据退火支架上的硅片顺序，机械手d依次将基板放入到第四缓冲通道d3里的第四输送机构d2上。自动阀门打开顺序：第四腔体d1内机械手d“搬运”硅片，当机械手d运行到设定位置，阀门G自动打开。机械手d将基板放入到自动运输d上，机械手d撤出第四缓冲通道d3，阀门G关闭。第四输送机构d2将硅片运输到自动阀门H感应到的设定位置时，阀门H自动打开，硅片进入到第五缓冲通道e3内，阀门H自动关闭。第四缓冲通道d3此时是封闭状态，通过气体置换，恢复与第四腔体d1相同的气氛环境。第五输送机构e2将硅片运输到自动阀门J感应到的设定位置时，有第五腔体e1内的机械手e将第五缓冲通道e3中的硅片放置到第五腔体e1内，等待进行扩散流程，阀门J自动关闭。当硅片达到设定的数量，扩散设备开启扩散程序。In order to prevent the diffused gas in the fifth chamber e1 from affecting the entire production line and the external environment, the annealed substrate with an extremely thin silicon wafer is transported from the fourth chamber d1 to the fifth chamber e1 through the fourth buffer Channel d3 and fifth buffer channel e3. In the fourth chamber d1, the annealed silicon wafers are put into the fourth conveying mechanism d2 in the fourth buffer channel d3 by the manipulator d according to the order of the silicon wafers on the annealing support. Automatic valve opening sequence: the manipulator d in the fourth chamber d1 "carries" the silicon wafer, when the manipulator d moves to the set position, the valve G is automatically opened. The manipulator d puts the substrate on the automatic transport d, the manipulator d withdraws from the fourth buffer channel d3, and the valve G is closed. When the fourth conveying mechanism d2 transports the silicon wafer to the set position sensed by the automatic valve H, the valve H is automatically opened, the silicon wafer enters the fifth buffer channel e3, and the valve H is automatically closed. The fourth buffer channel d3 is in a closed state at this time, and the atmosphere environment same as that of the fourth cavity d1 is restored through gas replacement. When the fifth conveying mechanism e2 transports the silicon wafer to the set position sensed by the automatic valve J, the manipulator e in the fifth cavity e1 places the silicon wafer in the fifth buffer channel e3 into the fifth cavity e1, Waiting for the diffusion process, valve J is automatically closed. When the number of silicon wafers reaches the set number, the diffusion equipment starts the diffusion process.

本实施例中以n型硅片进行扩散硼为例说明。本实施例中n型硅片采用传统工艺的硼扩散，液态源硼扩散常用硼酸三甲酯B(CH3O)₃、硼酸三丙酯、三溴化硼B(Br)₃、无水硼酸三甲酯B(CH3O)₃、为无色透明液体，在室温下挥发形成，具有较高真气压，硼酸三甲酯遇水易分解，升成硼酸和甲醇。气体硼源扩散常用氯化硼，固态硼源常用氮化硼。In this embodiment, boron diffusion is performed on an n-type silicon wafer as an example for illustration. In this example, the n-type silicon chip adopts the boron diffusion of the traditional process, and the liquid source boron is commonly used for the diffusion of trimethyl borate B(CH3O)₃ , tripropyl borate, boron tribromide B(Br)₃ , anhydrous trimethyl borate Ester B(CH3O)₃ , is a colorless transparent liquid, formed by volatilization at room temperature, with high vacuum pressure, trimethyl borate is easily decomposed in water, and rises to boric acid and methanol. Boron chloride is commonly used for gaseous boron source diffusion, and boron nitride is commonly used for solid boron source.

n型硅片材料基底的掺杂元素为磷，需要在硅片表面驱入硼元素以达到形成pn结的目的。n型硅片作为基底材料，在硅片表面通过碱腐蚀形成金字塔绒面；对处理后硅片表面进行RCA清洗并烘干；在硅片表面制备pn结，将烘干后n型硅片放置与扩散炉管中，温度控制在850～900℃，硼源沉积在硅片表面。沉积时间达到设定值，把温度升高至900～950℃，硼原子扩散到硅片表面，扩散深度<5微米，形成pn结。整个扩散过程是在氮气、氧气和带有硼源氮气环境下进行，由氮气稳定扩散气压。整个扩散在封闭系统内操作，无毒无污染。The doping element of the n-type silicon chip material base is phosphorus, and boron needs to be driven into the surface of the silicon chip to achieve the purpose of forming a pn junction. The n-type silicon wafer is used as the base material, and the surface of the silicon wafer is etched by alkali to form a pyramid texture; the surface of the silicon wafer is cleaned and dried by RCA; the pn junction is prepared on the surface of the silicon wafer, and the dried n-type silicon wafer is placed In the diffusion furnace tube, the temperature is controlled at 850-900°C, and the boron source is deposited on the surface of the silicon wafer. When the deposition time reaches the set value, the temperature is raised to 900-950° C., and the boron atoms diffuse to the surface of the silicon wafer, and the diffusion depth is less than 5 microns, forming a pn junction. The whole diffusion process is carried out under the environment of nitrogen, oxygen and nitrogen with boron source, and the diffusion pressure is stabilized by nitrogen. The entire diffusion is operated in a closed system, non-toxic and pollution-free.

(6)pn结退火：将已经形成pn结的薄硅片进行退火处理，形成硅片。(6) Pn junction annealing: annealing the thin silicon wafer on which the pn junction has been formed to form a silicon wafer.

如图10所示，此步骤涉及缓冲部分R6，缓冲部分R6包括一第六腔体f1，第六腔体f1内部盛放形成pn结的基板，第六腔体f1的入口端设有第十二封闭阀门M(下述阀门M)，阀门M对接第七输送机构g2，阀门M的出口端设有第十三封闭阀门O(下述阀门O)，阀门O连接第八输送机构h2。As shown in Figure 10, this step involves the buffering part R6, the buffering part R6 includes a sixth chamber f1, the inside of the sixth chamber f1 holds the substrate forming the pn junction, and the inlet end of the sixth chamber f1 is provided with a tenth Two closed valves M (valve M below), the valve M is connected to the seventh delivery mechanism g2, the outlet end of the valve M is provided with a thirteenth closed valve O (valve O below), and the valve O is connected to the eighth delivery mechanism h2.

缓冲部分R6主要功能是将扩散完成形成pn结的硅片取出，为防止扩散气体外泄，同时通过缓冲腔体进行硅片退火。The main function of the buffer part R6 is to take out the silicon wafer that has been diffused to form a pn junction. In order to prevent the diffusion gas from leaking out, the silicon wafer is annealed through the buffer chamber.

为防止扩散气体外泄，从第五腔体e1到第六腔体f1，需要经过两道缓冲通道，硅片运输流程与从第四腔体d1到第五腔体e1类同，在此不再累赘叙述。由于硅片扩散过程中是在850～950℃的环境中进行，需要其降温到室温再进行制作电池及组件工艺。硅片将在缓冲腔体的第六腔体f1内进行退火降温。降温的主要方法是通入氮气进行降温，氮气气体流量为5～13l/min，降温速率为6～15℃/min。In order to prevent the diffusion gas from leaking out, two buffer channels need to pass through from the fifth chamber e1 to the sixth chamber f1, and the transportation process of the silicon wafer is similar to that from the fourth chamber d1 to the fifth chamber e1. More cumbersome description. Since the silicon wafer diffusion process is carried out in an environment of 850-950°C, it is necessary to cool it down to room temperature before proceeding with the manufacturing of cells and components. The silicon wafer will be annealed and cooled in the sixth chamber f1 of the buffer chamber. The main method of cooling is to pass nitrogen gas for cooling, the flow rate of nitrogen gas is 5-13l/min, and the cooling rate is 6-15°C/min.

在另一个实施例中，提供一种硅片，该硅片由上述步骤所述的方法生产得出。In another embodiment, a silicon wafer is provided, and the silicon wafer is produced by the method described in the above steps.

在另一个实施例中，提供一种太阳能电池，太阳能电池包括上述硅片，硅片表面设置有一层减反射膜。In another embodiment, a solar cell is provided. The solar cell includes the above-mentioned silicon wafer, and a layer of anti-reflection film is provided on the surface of the silicon wafer.

本发明可以轻松实现50μm以下的硅薄膜，理论上可以省去80％以上的硅料。在基板温度、液态硅温度和甩片速度等参数不同的情况下，可形成厚度为5～5000μm的均匀晶体硅。The invention can easily realize a silicon thin film with a thickness of less than 50 μm, and can save more than 80% of silicon material in theory. In the case of different parameters such as substrate temperature, liquid silicon temperature and flake speed, uniform crystalline silicon with a thickness of 5-5000 μm can be formed.

现有技术中，多晶或单晶硅片都必须经线切割的机械过程，不可避免地对硅片表面造成硬性细微划伤破坏了表面的硅晶格构造，而关键的发电pn结仅数微米。本发明的表面是自然生长的，可获得几乎完美的晶格结构，对提高发电效率无疑是积极的因素。本发明利用红外拉曼散射等可以添加的辅助在线测定手段，测定柱状晶的生长情况和纯度估计，实施融化、结晶等过程。In the prior art, both polycrystalline and monocrystalline silicon wafers must undergo a mechanical process of wire cutting, which inevitably causes hard and fine scratches on the surface of the silicon wafer and destroys the silicon lattice structure on the surface, while the key pn junction for power generation is only a few microns . The surface of the present invention grows naturally and can obtain an almost perfect lattice structure, which is undoubtedly a positive factor for improving power generation efficiency. The present invention utilizes infrared Raman scattering and other supplementary on-line measurement means that can be added to measure the growth of columnar crystals and estimate their purity, and implement processes such as melting and crystallization.

以上所述仅是对本发明的较佳实施方式而已，并非对本发明作任何形式上的限制，凡是依据本发明的技术实质对以上实施例所做的任何简单修改，等同变化与修饰，均属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Any simple modifications made to the above embodiments based on the technical essence of the present invention, equivalent changes and modifications, all belong to this invention. within the scope of the technical solution of the invention.

Claims

Translated fromChinese

1.一种硅片的生产方法，其特征在于：包括以下步骤1. A method for producing silicon wafers, characterized in that: comprising the following steps

pn结退火：将已经形成pn结的基板薄硅片进行退火处理，形成硅片；Pn junction annealing: annealing the thin silicon wafer of the substrate that has formed a pn junction to form a silicon wafer;

所述封闭系统内设置一甩片机构（8），所述甩片机构（8）上固定有甩片平台（9），所述基板固定在所述甩片平台（9）上，加硅料系统（7）连接有氩气，氩气将液态硅料推至所述基板上，所述甩片机构（8）带动所述甩片平台（9）旋转运动；A flake mechanism (8) is set in the closed system, a flake platform (9) is fixed on the flake mechanism (8), the substrate is fixed on the flake platform (9), silicon material is added The system (7) is connected with argon gas, and the argon gas pushes the liquid silicon material onto the substrate, and the flake mechanism (8) drives the flake platform (9) to rotate;

所述封闭系统还包括初始存放部分R1，初始存放部分R1包括一第一腔体a1，在第一腔体a1内，在恒温恒压的基板由机械手a根据支架上存放的基板顺序，机械手a依次将基板放入到第一缓冲通道a3的第一输送机构a2上；PLC控制的自动阀门打开顺序：第一腔体a1内机械手a搬运基板，当机械手a运行到设定位置，自动阀门A收到感应器信号，第一腔体a1内的机械手a将基板放入到第一缓冲通道a3内，阀门A自动打开；机械手a将基板放入到第一输送机构a2上，机械手a撤出第一缓冲通道a3，机械手a撤出到设定位置，阀门A关闭；第一输送机构a2将基板运输到自动阀门B感应到的设定位置时，阀门B自动打开，有第二腔体b1内的机械手b将第一缓冲通道a3中的基板放置到第二腔体b1内，等待检测，阀门B自动关闭，质检设备开启检测基板程序；The closed system also includes an initial storage part R1. The initial storage part R1 includes a first cavity a1. In the first cavity a1, the substrates at constant temperature and pressure are stored by the robot a according to the order of the substrates stored on the bracket. The robot a Put the substrate into the first conveying mechanism a2 of the first buffer channel a3 in sequence; the automatic valve opening sequence controlled by PLC: the robot a in the first cavity a1 carries the substrate, when the robot a moves to the set position, the automatic valve A After receiving the sensor signal, the manipulator a in the first cavity a1 puts the substrate into the first buffer channel a3, and the valve A automatically opens; the manipulator a puts the substrate on the first conveying mechanism a2, and the manipulator a withdraws In the first buffer channel a3, the manipulator a is withdrawn to the set position, and the valve A is closed; when the first conveying mechanism a2 transports the substrate to the set position sensed by the automatic valve B, the valve B is automatically opened, and there is a second cavity b1 The robot arm b inside puts the substrate in the first buffer channel a3 into the second cavity b1, waiting for detection, the valve B is automatically closed, and the quality inspection equipment starts the detection substrate program;

所述封闭系统还包括硅片形成部分R3、退火部分R4、pn结形成部分R5、缓冲部分R6，以及设置于相邻部分之间的输送机构；其中，制作薄硅片步骤在硅片形成部分R3中进行，薄硅片退火步骤在退火部分R4中进行，p型或n型扩散步骤在pn结形成部分R5中进行，pn结退火步骤在缓冲部分R6中进行；The closed system also includes a silicon wafer forming part R3, an annealing part R4, a pn junction forming part R5, a buffer part R6, and a conveying mechanism arranged between adjacent parts; wherein, the step of making a thin silicon wafer is performed in the silicon wafer forming part Carry out in R3, the thin silicon wafer annealing step is carried out in the annealing part R4, the p-type or n-type diffusion step is carried out in the pn junction forming part R5, and the pn junction annealing step is carried out in the buffer part R6;

输送机构包括第三输送机构c2、第四输送机构d2、第五输送机构e2；The conveying mechanism includes a third conveying mechanism c2, a fourth conveying mechanism d2, and a fifth conveying mechanism e2;

硅片形成部分R3包括一第三腔体c1，第三腔体c1内设有所述甩片平台（9）和所述加硅料系统（7），所述加硅料系统（7）将硅料注入在所述甩片平台（9）上的基板上，所述甩片平台（9）旋转运动；The silicon wafer forming part R3 includes a third cavity c1, the third cavity c1 is provided with the wafer throwing platform (9) and the silicon material adding system (7), and the silicon material adding system (7) will The silicon material is injected onto the substrate on the flake platform (9), and the flake platform (9) rotates;

退火部分R4包括第四腔体d1，第四腔体d1内设有退火支架（23），所述退火支架（23）上盛放带有硅片的基板；第四腔体d1内还设有第三加热装置和第二温度传感器（42）；第四腔体d1的入口端设有第六封闭阀门F，第六封闭阀门F对接第三输送机构c2；第四腔体d1的出口端设有第七封闭阀门G，第七封闭阀门G的外部设有第四输送机构d2和第五输送机构e2，第四输送机构d2与第五输送机构e2之间设有第八封闭阀门H，第五输送机构e2将退火后的基板输送到下一部分；The annealing part R4 includes a fourth cavity d1, and an annealing support (23) is provided in the fourth cavity d1, and a substrate with a silicon wafer is placed on the annealing support (23); the fourth cavity d1 is also provided with The third heating device and the second temperature sensor (42); the inlet end of the fourth cavity d1 is provided with a sixth closed valve F, and the sixth closed valve F is connected to the third delivery mechanism c2; the outlet end of the fourth cavity d1 is provided with There is a seventh closing valve G, the fourth delivery mechanism d2 and the fifth delivery mechanism e2 are arranged outside the seventh closing valve G, and the eighth closing valve H is arranged between the fourth delivery mechanism d2 and the fifth delivery mechanism e2. Five conveying mechanism e2 conveys the annealed substrate to the next part;

硅片能够随意切割剪裁；硅片的厚度小于50μm。The silicon wafer can be cut and trimmed at will; the thickness of the silicon wafer is less than 50 μm.

2.根据权利要求1所述的一种硅片的生产方法，其特征在于，在注入液态硅料时，包括以下步骤：将固态硅放置在加硅料系统（7）中，保持固态硅恒温，再让固态硅快速升温到硅料熔点以上，此时固态硅变为液态硅料，所述加硅料系统（7）将液态硅料注入到所述基板上。2. The production method of a silicon wafer according to claim 1, characterized in that, when injecting liquid silicon material, it includes the following steps: placing the solid silicon in the silicon material adding system (7), and keeping the solid silicon at a constant temperature , and let the solid silicon heat up rapidly to above the melting point of the silicon material, at this time the solid silicon becomes liquid silicon material, and the silicon material adding system (7) injects the liquid silicon material onto the substrate.

3.根据权利要求2所述的一种硅片的生产方法，其特征在于，在制作薄硅片的封闭系统中，氩气压强范围：40~80 kPa，恒温温度范围：1250~1400℃；经加热装置保持固态硅恒温，温度范围：1300~1400℃，保持1~5秒后，经另一加热装置瞬间加热固态硅到1450℃以上。3. The production method of a silicon wafer according to claim 2, characterized in that, in the closed system for making thin silicon wafers, the argon pressure range: 40-80 kPa, and the constant temperature range: 1250-1400 °C; The solid silicon is kept at a constant temperature by the heating device, and the temperature range is 1300~1400°C. After holding for 1~5 seconds, the solid silicon is instantly heated to above 1450°C by another heating device.

4.根据权利要求3所述的一种硅片的生产方法，其特征在于，所述甩片机构（8）带动所述甩片平台（9）旋转的速度由慢到快进行变速运动，且在1~10秒之内达到设定转速，转速范围：300~5000 rpm。4. The production method of a silicon wafer according to claim 3, characterized in that, the speed of rotation of the wafer spinning platform (9) driven by the wafer spinning mechanism (8) is changed from slow to fast, and Reach the set speed within 1~10 seconds, speed range: 300~5000 rpm.

5.根据权利要求4所述的一种硅片的生产方法，其特征在于，所述晶体薄硅片与所述基板为一体式，所述晶体薄硅片为单晶硅片或者多晶硅片。5 . The production method of a silicon wafer according to claim 4 , wherein the crystalline thin silicon wafer is integrated with the substrate, and the crystalline thin silicon wafer is a single crystal silicon wafer or a polycrystalline silicon wafer.

6.根据权利要求1-5任一项所述的一种硅片的生产方法，其特征在于，在薄硅片退火时，氩气压强恒定范围：40~80 kPa，恒温温度范围：1250~1400℃；退火时间范围：0.5~12小时，退火温度的最低温度为扩散形成pn结的温度，范围在800~1000℃。6. The production method of a silicon wafer according to any one of claims 1-5, characterized in that, when the thin silicon wafer is annealed, the constant range of argon pressure is 40~80 kPa, and the constant temperature range is 1250~ 1400°C; annealing time range: 0.5~12 hours, the lowest annealing temperature is the temperature at which the pn junction is formed by diffusion, and the range is 800~1000°C.

7.一种硅片，其特征在于，所述硅片由上述权利要求1-6任一项所述方法生产。7. A silicon wafer, characterized in that the silicon wafer is produced by the method according to any one of claims 1-6.

8.一种太阳能电池，其特征在于，所述太阳能电池包括如权利要求7所述的硅片，所述硅片表面设置有一层减反射膜。8. A solar cell, characterized in that the solar cell comprises the silicon wafer according to claim 7, and a layer of anti-reflection film is provided on the surface of the silicon wafer.