CN113156289B - Device and method for high-precision testing of reverse recovery current of non-fully controlled semiconductor devices - Google Patents
Device and method for high-precision testing of reverse recovery current of non-fully controlled semiconductor devicesDownload PDFInfo
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及高精度电流测试装备，尤其是涉及非全控型半导体器件反向恢复电流高精度测试装置及方法。The invention relates to high-precision current testing equipment, in particular to a high-precision testing device and method for reverse recovery current of non-fully controlled semiconductor devices.
背景技术Background technique
半导体器件是当今新能源电力系统的重要组成部分，换流阀、无功补偿装置，直流断路器等关键电气装备都由大量半导体器件组成。而半导体器件的瞬态开断会带来一系列电压过冲、振荡等电磁干扰以及显著的能量损耗，影响了装备性能。因此，研究半导体器件的瞬态开断特性十分必要，尤其是器件关断过程的反向恢复特性。但是，对于非全控型半导体器件，诸如二极管、晶闸管的反向恢复特性，采用传统的LC振荡回路进行测试时，为了能够符合实际工况，正向电流峰值往往远大于反向恢复电流峰值。而对于一个高精度电流测试装备而言，当具有大测量范围时其测试精度往往较低，如何兼顾大测试范围的同时保证小电流测试的精度是获得非全控型半导体器件精确反向恢复特性亟待解决的问题。Semiconductor devices are an important part of today's new energy power systems. Key electrical equipment such as converter valves, reactive power compensation devices, and DC circuit breakers are composed of a large number of semiconductor devices. The transient switching of semiconductor devices will bring a series of electromagnetic interference such as voltage overshoot and oscillation, as well as significant energy loss, which will affect the performance of the equipment. Therefore, it is very necessary to study the transient breaking characteristics of semiconductor devices, especially the reverse recovery characteristics of the device's turn-off process. However, for the reverse recovery characteristics of non-fully controlled semiconductor devices, such as diodes and thyristors, when using the traditionalLC oscillation circuit for testing, in order to meet the actual working conditions, the peak value of the forward current is often much greater than the peak value of the reverse recovery current. For a high-precision current test equipment, its test accuracy is often low when it has a large measurement range. How to take into account the large test range while ensuring the accuracy of small current test is to obtain the accurate reverse recovery characteristics of non-full control semiconductor devices. Problems to be solved.
发明内容Contents of the invention
本发明的目的是提供一种非全控型半导体器件反向恢复电流高精度测试装置及方法，该装置既满足器件测试对正向电流峰值的要求，又可以实现对反向恢复电流的精准测试。The purpose of the present invention is to provide a non-full control type semiconductor device reverse recovery current high-precision testing device and method, which not only meets the requirements of the device test for the peak value of the forward current, but also can realize the precise test of the reverse recovery current .
为了解决上述存在的技术问题，本发明采用的技术方案如下：In order to solve the above-mentioned technical problems of existence, the technical scheme adopted in the present invention is as follows:
非全控型半导体器件反向恢复电流高精度测试装置，包括电容器Cm、电感元件Lm、被测非全控型半导体器件、二极管、第1半导体器件T1、第2半导体器件T2和高精度同轴电阻，所述电容器Cm和电感元件Lm串联构成LC串联支路；所述被测非全控型半导体器件的发射极与二极管的输入端连接，被测非全控型半导体器件的集电极与所述二极管的输出端连接组成被测非全控型半导体器件支路；所述第1半导体器件T1和高精度同轴电阻串联构成反向电流测试支路，第2半导体器件T2 构成正向导通支路，LC串联支路、被测非全控型半导体器件支路依次串联连接，反向电流测试支路和正向导通支路并联连接后接入到LC串联支路和被测非全控型半导体器件支路的串联电路中，形成闭合回路。Non-fully controlled semiconductor device reverse recovery current high-precision testing device, including capacitor Cm , inductance element Lm , tested non-fully controlled semiconductor device, diode, first semiconductor device T1, second semiconductor device T2 and high-precision A coaxial resistor, the capacitor Cm and the inductance element Lm are connected in series to form an LC series branch; the emitter of the measured non-fully controlled semiconductor device is connected to the input end of the diode, and the measured non-fully controlled semiconductor device The collector is connected to the output end of the diode to form a branch of the non-full control semiconductor device under test; the first semiconductor device T1 and the high-precision coaxial resistor are connected in series to form a reverse current test branch, and the second semiconductor device T2 forms The forward conduction branch, the LC series branch, and the non-full control semiconductor device branch under test are connected in series in sequence, and the reverse current test branch and the forward conduction branch are connected in parallel and connected to the LC series branch and the non-full control semiconductor device under test. In the series circuit of the branches of the fully controlled semiconductor devices, a closed loop is formed.
所述的非全控型半导体器件反向恢复电流高精度测试装置的测试方法，包括以下步骤：The test method of the described non-full control type semiconductor device reverse recovery current high-precision test device comprises the following steps:
①首先给电容器充电至Uch，为电路提供电能，并保持被测非全控型半导体器件处于触发状态；① First charge the capacitor toUch to provide electric energy for the circuit, and keep the non-full control semiconductor device under test in the triggered state;
②触发T2导通，电流通过正向导通支路；②Trigger T2 conduction, and the current passes through the forward conduction branch;
③经过∆t1时间后，电流快接近于第一个过点时，关断T2；③After∆t1 time, when the current is close to the first passing point, turn off T2 ;
④此时T2被关断，导通T1，电流i转移至反向电流测试支路，直至测试结束。④ At this time, T2 is turned off, T1 is turned on, and the currenti is transferred to the reverse current test branch until the end of the test.
导通第1半导体器件T1切换到反向电流测试支路后，产生反向恢复电流，反向恢复电流产生向下的尖峰。After turning on the first semiconductor device T1 and switching to the reverse current test branch, a reverse recovery current is generated, and the reverse recovery current generates a downward peak.
本发明所具有的优点和有益效果是：The advantages and beneficial effects that the present invention has are:
本发明非全控型半导体器件反向恢复电流高精度测试装置，当被测非全控型半导体器件由正向导通转换为外加负电压截止时，这些存储的少数载流子的消失需要一定时间，这段时间就是半导体器件的反向恢复时间，这段时间里在半导体中形成的电流即为半导体器件的反向恢复电流。这样流过同轴电阻的电流极小，可以采用小量程范围的同轴电阻，而小量程同轴电阻测试精度较高。The non-full-control semiconductor device reverse recovery current high-precision testing device of the present invention, when the non-full-control semiconductor device under test is switched from forward conduction to external negative voltage cut-off, it takes a certain time for the stored minority carriers to disappear , this period of time is the reverse recovery time of the semiconductor device, and the current formed in the semiconductor during this period is the reverse recovery current of the semiconductor device. In this way, the current flowing through the coaxial resistor is extremely small, and the coaxial resistor with a small range can be used, and the test accuracy of the small range coaxial resistor is high.
采用双支路结构，首先给电容器充电，经过非全控型半导体器件，让大的正向电流通流过程和小电流反向恢复过程分别流过两个不同的支路，配合使用小量程高精度同轴电阻进行测试，既满足器件测试对正向电流峰值的要求，又可以实现对反向恢复电流的精准测试。The double-branch structure is adopted. Firstly, the capacitor is charged, and the non-full-controlled semiconductor device is used to allow the large forward current flow process and the small current reverse recovery process to flow through two different branches respectively. The precision coaxial resistance is tested, which not only meets the requirements of the device test for the peak value of the forward current, but also realizes the precise test of the reverse recovery current.
附图说明Description of drawings
下面结合附图和实施例对本发明进行详细描述：The present invention is described in detail below in conjunction with accompanying drawing and embodiment:
图1是本发明非全控型半导体器件反向恢复电流高精度测试装置的测试电路结构图；Fig. 1 is the test circuit structural diagram of the non-full control type semiconductor device reverse recovery current high-precision test device of the present invention;
图2是本发明非全控型半导体器件反向恢复电流高精度测试装置的电路原理图；Fig. 2 is the circuit schematic diagram of the non-full control type semiconductor device reverse recovery current high-precision testing device of the present invention;
图3是本发明非全控型半导体器件反向恢复电流高精度测试方法的时序图；Fig. 3 is the timing diagram of the high-precision testing method for the reverse recovery current of the non-full control type semiconductor device of the present invention;
图4是本发明非全控型半导体器件反向恢复电流高精度测试方法的电流波形示意图。FIG. 4 is a schematic diagram of a current waveform of a high-precision testing method for a reverse recovery current of a non-fully controlled semiconductor device according to the present invention.
具体实施方式Detailed ways
为了进一步说明本发明，下面结合附图及实施例对本发明进行详细的描述，但不能将它们理解为对本发明保护范围的限定。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。In order to further illustrate the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, but they should not be construed as limiting the protection scope of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
如图1、2所示，本发明非全控型半导体器件反向恢复电流高精度测试系统，包括电容器Cm、电感元件Lm、被测非全控型半导体器件1、二极管3、第1半导体器件T1、第2半导体器件T2和高精度同轴电阻2，所述电容器Cm和电感元件Lm串联构成LC串联支路；所述被测非全控型半导体器件1的发射极与二极管的输入端连接，被测非全控型半导体器件的集电极与所述二极管的输出端连接组成被测非全控型半导体器件支路；所述第1半导体器件T1和高精度同轴电阻2串联构成反向电流测试支路，第2半导体器件T2 构成正向导通支路，LC串联支路、被测非全控型半导体器件支路依次串联连接，反向电流测试支路和正向导通支路并联连接后接入到LC串联支路和被测非全控型半导体器件支路的串联电路中，形成闭合回路。所述被测非全控性半导体器件支路用于根据所述电源产生模拟电流；所述正向导通支路用于导通正向电流；所述反向电流测试支路用于导通反向电流。反向电压可调的反向恢复特性测试电路包括：LC串联支路、被测非全控型半导体器件、反向电流测试支路以及正向导通支路。LC串联支路为电路提供电源；正向导通支路通过T2控制，能够导通正向电流，反向电流测试支路通过T1控制，能够导通反向电流。As shown in Figures 1 and 2, the non-full-control semiconductor device reverse recovery current high-precision testing system of the present invention includes a capacitor Cm , an inductance element Lm , a non-fully-controlled semiconductor device 1 to be tested, a diode 3, a first The semiconductor device T1, the second semiconductor device T2 and the high-precision coaxial resistor 2, the capacitor Cm and the inductance element Lm are connected in series to form an LC series branch; the emitter of the measured non-fully controlled semiconductor device 1 and the diode The input terminal of the non-full-control semiconductor device under test is connected to the output terminal of the diode to form a branch of the non-full-control semiconductor device under test; the first semiconductor device T1 and the high-precision coaxial resistor 2 The reverse current test branch is formed in series, and the second semiconductor device T2 constitutes the forward conduction branch. After the circuit is connected in parallel, it is connected to the series circuit of the LC series branch and the non-fully controlled semiconductor device branch under test to form a closed loop. The branch of the tested non-full control semiconductor device is used to generate an analog current according to the power supply; the forward conduction branch is used to conduct the forward current; the reverse current test branch is used to conduct the reverse to the current. The reverse recovery characteristic test circuit with adjustable reverse voltage includes: an LC series branch, a non-fully controlled semiconductor device to be tested, a reverse current test branch and a forward conduction branch.The LC series branch provides power for the circuit; the forward conduction branch is controlled by T2 and can conduct forward current, and the reverse current test branch is controlled by T1 and can conduct reverse current.
非全控型半导体器件反向恢复电流高精度测试系统的测试方法，包括以下步骤：A test method for a high-precision test system for the reverse recovery current of a non-fully controlled semiconductor device, comprising the following steps:
①首先给电容器充电至Uch，为电路提供电能，并保持被测非全控型半导体器件处于触发状态。① First charge the capacitor toUch to provide electric energy for the circuit, and keep the non-full control semiconductor device under test in a triggered state.
②触发T2导通，电流通过正向导通支路。电流通过正向导通支路，被测非全控型半导体器件内加正向电压导通时，被测非全控型半导体pn结上有非平衡少数载流子的积累，形成所谓电荷存储效应。②Trigger T2 conduction, and the current passes through the forward conduction branch. When the current passes through the forward conduction branch, when the non-full control semiconductor device under test is turned on with a forward voltage applied, the unbalanced minority carriers accumulate on the pn junction of the non-full control semiconductor device under test, forming the so-called charge storage effect .
③ 经过∆t1时间后，电流快接近于第一个过点时，关断T2。③ After∆t1 time, when the current is approaching the first passing point, T2 is turned off.
④此时T2被关断，导通T1，电流i转移至反向电流测试支路，直至测试结束。T1和T2切换时，如图3所示，时序图的曲线会发生突变。④ At this time, T2 is turned off, T1 is turned on, and the currenti is transferred to the reverse current test branch until the end of the test. When T1 andT2 switch, as shown in Figure3 , the curve of the timing diagram will change suddenly.
当被测非全控型半导体器件由正向导通转换为外加负电压截止时，这些存储的少数载流子的消失需要一定时间，这段时间就是被测非全控型半导体器件的反向恢复时间，这段时间里在被测非全控型半导体器件中形成的电流即为被测非全控型半导体器件的反向恢复电流，这样流过高精度同轴电阻的电流极小，所述反向电流测试支路配合使用小量程高精度同轴电阻进行测试，而小量程同轴电阻测试精度较高。When the non-full-control semiconductor device under test is converted from forward conduction to external negative voltage cut-off, it will take a certain time for these stored minority carriers to disappear, and this period of time is the reverse recovery of the non-full-control semiconductor device under test. Time, the current formed in the non-full control semiconductor device under test during this period is the reverse recovery current of the non-full control semiconductor device under test, so the current flowing through the high-precision coaxial resistor is extremely small, the said The reverse current test branch is tested with a small-range high-precision coaxial resistance, and the small-range coaxial resistance has a higher test accuracy.
由于电路导通从T2变为T1，原来的续流通路不复存在，电感能量以磁能存在，此时电路完全由电容提供电能。Since the conduction of the circuit changes from T2 to T1 , the original freewheeling path no longer exists, and the inductance energy exists as magnetic energy. At this time, the circuit is completely powered by the capacitor.
如图4所示，原来的续流通路向上，切换后电感要充电，电容要充电，此时反向恢复电流将产生向下的尖峰。As shown in Figure 4, the original freewheeling path is upward, and after switching, the inductor needs to be charged and the capacitor needs to be charged. At this time, the reverse recovery current will generate a downward peak.
这样让大的正向电流通流过程和小电流反向恢复过程分别流过两个不同的支路，配合使用使用小量程高精度同轴电阻进行测试，既满足器件测试对正向电流峰值的要求，又可以实现对反向恢复电流的精准测试。In this way, the large forward current flow process and the small current reverse recovery process flow through two different branches respectively, and the use of small-scale high-precision coaxial resistors for testing not only meets the requirements of the device test for the peak value of the forward current Requirements, and accurate testing of reverse recovery current can be realized.
虽然本发明已以较佳的实施例公开如上，但其并非用以限定本发明，任何熟悉此技术的人，在不脱离本发明的精神和范围内，都可以做各种改动和修饰，因此本发明的保护范围应该以权利要求书所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person familiar with this technology can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore The scope of protection of the present invention should be defined by the claims.
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