CN113130287A

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Info

Publication number: CN113130287A
Application number: CN202010028214.5A
Authority: CN
Inventors: 林志隆; 蔡兆哲; 陈俊龙
Original assignee: Advanced System Technology Co ltd
Current assignee: Hermes Epitek Corp
Priority date: 2020-01-10
Filing date: 2020-01-10
Publication date: 2021-07-16
Anticipated expiration: 2040-01-10
Also published as: CN113130287B

Abstract

The invention discloses a coil current distribution type etching machine structure, which comprises: a first plasma reaction chamber having a first reaction chamber; a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors. By means of the implementation of the invention, different cleaning energies can be dynamically provided so as to adapt to the cleaning of the sediments with different thicknesses at different parts in the reaction chamber.

Description

Etching machine structure of coil current distribution type

Technical Field

The invention relates to an etching machine structure, in particular to a coil current distribution type etching machine structure.

Background

The position and length of the coil is important for Inductively Coupled Plasma (ICP). Once the length and position of the coil are fixed, they will not change, so the uniformity of plasma concentration, electron temperature distribution, and the position and degree of local damage in the reaction chamber will be fixed.

As shown in fig. 1, after the etcher is used for a period of time, polymer deposition (shown as dark region P101) occurs on the walls of the chamber after the plasma reaction, and the polymer deposition causes distortion of the process parameters in the chamber, and the level of impurity particles in the chamber increases as the thickness of the polymer deposition increases, thereby causing a problem of serious yield loss.

In the conventional inductively coupled plasma etcher, especially when dry clean (dry clean) is used, since the thickness of the polymer deposition is different at each portion, how to design a mechanism for providing different cleaning energies for different portions so as to effectively remove the polymer (the light color region P102 in the figure) has become an important issue in the development of the device.

Disclosure of Invention

The invention relates to a coil current distribution type etching machine structure, which mainly aims to solve the problem that how to enable a coil to provide different magnetic fields according to conditions so as to dynamically generate different plasma densities at different parts to provide different cleaning energies.

The invention provides a coil current distribution type etching machine structure, which comprises: a first plasma reaction chamber having a first reaction chamber; a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors.

In an embodiment of the invention, the plurality of first C-shaped coils are arranged parallel to each other.

In an embodiment of the invention, the plurality of first C-shaped coils are arranged at equal intervals.

In an embodiment of the invention, an anti-glitch capacitor is disposed between the first power module and the ground terminal.

In an embodiment of the invention, a plurality of the grounding end portions are electrically connected to a grounding end after being connected in series with a capacitor.

In an embodiment of the present invention, the coil current distribution type etching machine further includes:

a second plasma reaction chamber having a second reaction chamber in communication with the first reaction chamber;

a plurality of second C-shaped coils arranged at the periphery of the second reaction chamber in an upper and lower direction, each second C-shaped coil having a second input end and a second ground end; and

the second power supply module is electrically connected with the second input end in a one-to-one mode through a plurality of second variable capacitors.

In an embodiment of the invention, the plurality of second C-shaped coils are arranged parallel to each other.

In an embodiment of the present invention, the plurality of second C-shaped coils are arranged at equal intervals.

In an embodiment of the invention, an anti-glitch capacitor is disposed between the second power module and the ground terminal.

By implementing the invention, at least the following progressive effects can be achieved:

one, different plasma densities can be selectively generated at different parts by the coil, so that different cleaning energies can be generated in the reaction chamber.

Secondly, the level of impurity particles in the reaction chamber can be reduced.

So that those skilled in the art can readily understand the disclosure, the claims and the drawings, and can easily understand the objects and advantages of the present invention, the detailed features and advantages of the present invention will be described in detail in the embodiments.

Drawings

FIG. 1 is a live view of the interior of a reaction chamber of a prior art etcher after use for a period of time;

FIG. 2 is a schematic diagram of a coil current distribution type etching machine for a single plasma reaction chamber according to an embodiment of the present invention;

fig. 3 is a schematic diagram of an anti-surge capacitor disposed between the first power module and the ground terminal shown in fig. 2;

FIG. 4 is a schematic diagram of the first C-shaped coil shown in FIG. 2, wherein the grounding end is connected in series with a capacitor and then grounded;

FIG. 5 is a schematic diagram of a coil current distribution type etching machine of a dual plasma reaction chamber according to an embodiment of the present invention;

fig. 6 is a schematic diagram of the second power module shown in fig. 5 and a ground terminal having a spike-proof capacitor disposed therebetween;

FIG. 7 is a schematic diagram of the first C-shaped coil shown in FIG. 5 with a capacitor connected in series with the grounding end and then grounded;

FIG. 8 is a simulation of the first and second C-coil plasma reaction and cleaning in accordance with the first embodiment of the present invention;

FIG. 9 is a simulation of the first and second C-coil plasma reactions and cleaning in accordance with a second embodiment of the present invention;

FIG. 10 is a simulation of the plasma reaction and cleaning of the first and second C-type coils according to the third embodiment of the present invention; and

FIG. 11 is a simulation of the first and second C-coil plasma reaction and cleaning according to a fourth embodiment of the present invention.

[ notation ] to show

P101: dark regions

P102: light-colored areas

100: etching machine structure of coil current distribution type

110: a first plasma reaction chamber

111: a first reaction chamber

120a, 120b, 120 c: first C-shaped coil

121a, 121b, 121 c: first input terminal

122a, 122b, 122 c: first ground terminal

130: first power supply module

131a, 131b, 131 c: a first variable capacitor

210: the second plasma reaction chamber

211: a second reaction chamber

220a, 220b, 220 c: second C-shaped coil

221a, 221b, 221 c: second input terminal

222a, 222b, 222 c: second ground terminal

230: second power supply module

231a, 231b, 231 c: second variable capacitor

C1: anti-surge capacitor

C2: isolation capacitor

GL: grounding terminal

I11, I12, I13: first current

I21, I22, I23: the second current

Detailed Description

As shown in fig. 2, the present embodiment provides a coil current distribution typeetching machine structure 100, which includes: a firstplasma reaction chamber 110; a plurality of first C-

type coils

120a, 120b, 120C; and afirst power module 130.

The firstplasma reaction chamber 110 is, for example, a plasma reaction chamber capable of completing an etching process, and the firstplasma reaction chamber 110 has afirst reaction chamber 111.

First C-

type coils

120a, 120b, and 120C formed at the periphery of thefirst reaction chamber 111 in an up-down arrangement, the first C-

type coils

120a, 120b, and 120C mainly providing energy for thefirst reaction chamber 111 to generate plasma; each of the first C-shaped

coils

120a, 120b, 120C has a

first input end

121a, 121b, 121C and a

120a, 120b, and 120C may be arranged in parallel with each other and/or at equal intervals.

Thefirst power module 130 mainly provides power for the first C-shapedcoils 120A, 120b, 120C, and thefirst power module 130 is electrically connected to the first input ends 121A, 121b, 121C through a plurality of firstvariable capacitors 131A, 131b, 131C, so that by changing the capacitance of each of the firstvariable capacitors 131A, 131b, 131C, the magnitudes of the first currents I11, I12, I13 passing through each of the first C-shapedcoils 120A, 120b, 120C can be respectively controlled, for example, between 1A (ampere) and 20A, and the ratio thereof is, for example, 10A:10A, 1A:10A:20A, 20A:10A:1A, and the like, which can be arbitrarily combined.

The distribution of the first currents I11, I12, I13 is determined according to the location and degree of the fouling in thefirst reaction chamber 111, and the arrangement of the first currents I11, I12, I13 can make a specific first C-

type coil

120a, 120b, 120C generate a specific magnetic field energy, generate different plasma energies at the corresponding location in thefirst reaction chamber 111, generate plasma with high energy by using a larger current at a location with deep fouling, and generate plasma with low energy by using a smaller current at a location with low fouling, so that the inner wall of the correspondingfirst reaction chamber 111 can generate cleaning energy with different degrees.

As shown in fig. 3 and 4, in order to avoid the surge when thefirst power module 130 is input, a surge-preventing capacitor C1 may be disposed between thefirst power module 130 and the ground GL. In order to ensure the loop of the first C-

type coils

120a, 120b, and 120C, dc or noise can be effectively blocked, the first grounding ends 122a, 122b, and 122C can be electrically connected to the grounding terminal GL after being connected in series to the isolation capacitor C2.

As shown in FIG. 5, in some processes, theetcher structure 100 may be used with a secondplasma reaction chamber 210, and thus theetcher structure 100 may further comprise: a secondplasma reaction chamber 210; a plurality of second C-shaped

coils

220a, 220b, 220C; and asecond power module 230.

The secondplasma reaction chamber 210 is, for example, a plasma reaction chamber capable of completing an etching process, and the secondplasma reaction chamber 210 has asecond reaction chamber 211 communicated with thefirst reaction chamber 111.

Second C-shaped

coils

220a, 220b, 220C formed at the periphery of thesecond reaction chamber 211 in an up-down arrangement, the second C-shaped

coils

220a, 220b, 220C mainly providing energy for thesecond reaction chamber 211 to generate plasma; each of the second C-shaped

coils

220a, 220b, 220C has a

second input end

221a, 221b, 221C and a

220a, 220b and 220C may be arranged in parallel with each other and/or at equal intervals.

Thesecond power module 230 mainly provides power for the second C-shapedcoils 220A, 220b, 220C, and thesecond power module 230 is electrically connected to thesecond input terminals 221A, 221b, 221C through a plurality of second variable capacitors 231A, 231b, 231C, so that by changing the capacitance of each of the second variable capacitors 231A, 231b, 231C, the magnitudes of the second currents I21, I22, I23 passing through each of the second C-shapedcoils 220A, 220b, 220C can be respectively controlled, for example, between 1A and 20A, and for example, the ratio thereof is 10A:10A, 1A:10A:20A, 20A:10A:1A, and the like, which can be arbitrarily combined.

The distribution of the second currents I21, I22, I23 is determined according to the location and degree of the fouling in thesecond reaction chamber 211, and the arrangement of the second currents I22, I23, I3 can make a specific second C-shaped

coil

220a, 220b, 220C generate a specific magnetic field energy, generate different plasma energies at the corresponding location in thesecond reaction chamber 211, generate plasma with high energy by using a larger current at a location with deep fouling, generate plasma with low energy by using a smaller current at a location with low fouling, and generate different degrees of cleaning energy at the inner wall of the correspondingsecond reaction chamber 211.

As shown in fig. 6 and 7, in order to avoid the surge when thesecond power module 230 is inputted, a surge-preventing capacitor C1 may be disposed between thesecond power module 230 and the ground GL. In order to ensure the loop of the second C-

type coils

220a, 220b, and 220C, dc or noise can be effectively blocked, the

second ground terminals

222a, 222b, and 222C can be electrically connected to the ground terminal GL after being connected in series to the isolation capacitor C2.

As shown in fig. 8, which is a half-edge simulation using thefirst reaction chamber 111, 1: 1: 1, for example 20A: 20A: the first currents I11, I12, I13 of 20A are used to generate plasma reaction in thefirst reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of thefirst reaction chamber 111.

As shown in fig. 9, which is a half-edge simulation using thefirst reaction chamber 111, 1: 0: 0, for example 20A: 0A: the first currents I11, I12, I13 of 0A are used to generate plasma reaction in thefirst reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of thefirst reaction chamber 111.

As shown in fig. 10, which is a half-edge simulation using thefirst reaction chamber 111, 0: 1: 0, for example, is 0A: 20A: the first currents I11, I12, I13 of 0A are used to generate plasma reaction in thefirst reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of thefirst reaction chamber 111.

As shown in fig. 11, which is a half-edge simulation using thefirst reaction chamber 111, 0: 0: 1, for example 0A: 0A: the first currents I11, I12, I13 of 20A are used to generate plasma reaction in thefirst reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of thefirst reaction chamber 111.

When the inner wall scale cleaning operation of thesecond reaction chamber 211 is to be performed, the same cleaning effect can be achieved as compared with the operation of fig. 8 to 11.

While the foregoing embodiments have been described in a specific embodiment, it will be appreciated that those skilled in the art, upon attaining an understanding of the disclosure of the present invention, may readily conceive of alterations to, variations of, and equivalents to these embodiments which may be practiced without departing from the spirit and scope of the present invention, which should be assessed accordingly to that of the appended claims.

Claims

1. A coil current distribution etcher structure comprising:

a first plasma reaction chamber having a first reaction chamber;

a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and

the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors.

2. The etcher structure of claim 1 wherein the plurality of first C-coils are arranged parallel to one another.

3. The etcher structure of claim 1 wherein the plurality of first C-coils are arranged at equal intervals from one another.

4. The structure of claim 1, wherein an anti-glitch capacitor is disposed between the first power module and the ground.

5. The structure of claim 1, wherein a plurality of the grounding terminals are electrically connected to a ground terminal after being connected in series with a capacitor.

6. The etcher structure of claim 1 further comprising:

7. The etcher structure of claim 6 wherein the plurality of second C-coils are arranged parallel to one another.

8. The etcher structure of claim 6, wherein the plurality of second C-coils are arranged at equal intervals with respect to each other.

9. The structure of claim 6, wherein an anti-glitch capacitor is disposed between the second power module and the ground.

10. The structure of claim 6, wherein a plurality of the grounding terminals are electrically connected to a ground terminal after being connected in series with a capacitor.