CN113126831A - Etching solution, touch panel and manufacturing method thereof - Google Patents

Abstract

The invention discloses an etching solution, a touch panel and a manufacturing method thereof, wherein the manufacturing method of the touch panel comprises the following steps: providing a substrate, wherein the substrate is provided with a display area and a peripheral area; arranging a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is positioned in the display area, and a second part of the metal nanowire layer and the metal layer are positioned in the peripheral area; and a patterning step, which comprises forming a plurality of peripheral leads on the metal layer and a plurality of etching layers on the second part of the metal layer by using an etching solution capable of etching the metal layer and the metal nanowire layer, wherein the etching solution comprises 0.2-40 wt% of hydrogen peroxide, 0.2-20 wt% of acids, 0.1-10 wt% of metal corrosion inhibitors and/or 0.1-10 wt% of stabilizers. In addition, an etching solution and a touch panel are provided. The invention directly carries out patterning of the metal nanowire layer or the metal layer through the etching solution so as to achieve the purpose of simplifying the manufacturing process and further control the manufacturing cost.

Description

Etching solution, touch panel and manufacturing method thereof

Technical Field

The invention relates to an etching solution, a touch panel and a manufacturing method thereof.

Background

In recent years, transparent conductors have been used in many display or touch related devices to allow light to pass through and provide appropriate electrical conductivity. Generally, the transparent conductor may be various metal oxides, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Cadmium Tin Oxide (CTO), or Aluminum-doped Zinc Oxide (AZO). However, these metal oxide thin films do not satisfy the flexibility requirements of display devices. Therefore, many flexible transparent conductors, for example, transparent conductors made of materials such as nanowires have been developed.

However, the nanowire manufacturing technology still has many problems to be solved, for example, when the nanowire is used to manufacture a touch electrode, an alignment error area needs to be reserved when the nanowire and the lead of the peripheral area are aligned, the size of the lead of the peripheral area cannot be reduced due to the alignment error area, and further the width of the peripheral area is large, especially, by using a Roll-to-Roll (Roll) process, the size of the alignment error area is further enlarged (for example, 150um) due to the deformation of the substrate, so that the minimum width of the peripheral area only reaches 2.5mm, and thus the narrow frame requirement of the display cannot be met. Furthermore, the choice of etching solution is also a problem.

Disclosure of Invention

In some embodiments of the present invention, the metal nanowire layer or the metal layer is directly patterned by the etching solution, so as to simplify the process and further control the manufacturing cost. The etching solution can provide good etching characteristics.

In some embodiments of the present invention, the metal nanowire layer and the metal layer are etched at one time, so as to achieve the effect of not reserving an alignment error region when aligning, so as to form a peripheral lead with a smaller width, thereby satisfying the requirement of a narrow frame.

In some embodiments of the present invention, the metal nanowire layer and the metal layer are etched in different steps, so as to achieve the effect of not reserving an alignment error region when performing alignment, so as to form a peripheral lead with a smaller width, thereby satisfying the requirement of a narrow frame. Meanwhile, the etching solution only selectively etches the metal nanowire layer but not the metal layer, so that the problems that the metal nanowire layers in the peripheral area and the display area are not completely etched or the metal layer in the peripheral area is subjected to side etching are solved.

According to some embodiments of the present invention, a method for manufacturing a touch panel includes: providing a substrate, wherein the substrate is provided with a display area and a peripheral area; arranging a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is positioned in the display area, and a second part of the metal nanowire layer and the metal layer are positioned in the peripheral area; and performing a patterning step, wherein the patterning step comprises forming a plurality of peripheral leads on the metal layer and forming a plurality of etching layers on the second part of the metal layer by using an etching solution capable of etching the metal layer and the metal nanowire layer, wherein the etching solution comprises 0.2-40 wt% of hydrogen peroxide, 0.2-20 wt% of acids, 0.1-10 wt% of metal corrosion inhibitors and/or 0.1-10 wt% of stabilizers.

In some embodiments of the present invention, the patterning step further includes forming a touch sensing electrode on the first portion of the metal nanowire layer by using the etching solution, the touch sensing electrode being disposed in the display area of the substrate and electrically connected to the peripheral leads.

In some embodiments of the invention, the metal corrosion inhibitor comprises at least one of a nitrogen-containing, sulfur-containing, or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole, and methylbenzotriazole.

In some embodiments of the present invention, the stabilizer comprises at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: arranging the metal layer on the peripheral area; and then arranging the metal nanowire layer in the display area and the peripheral area, wherein the first part is positioned in the display area and formed on the substrate, and the second part is positioned in the peripheral area and formed on the metal layer.

In some embodiments of the present invention, disposing the metal layer in the peripheral region includes: forming the metal layer on the peripheral area and the display area; and removing the metal layer in the display area.

In some embodiments of the present invention, the etching solution comprises 1.0-10.0 wt% of hydrogen peroxide, 1.0-5.0 wt% of acids, 2.0-7.0 wt% of metal corrosion inhibitors and/or 3.0-8.0 wt% of stabilizers.

In some embodiments of the present invention, the patterning step further includes forming a plurality of marks on the metal layer by using the etching solution, the etching layer includes a plurality of first covers and a plurality of second covers, each of the first covers is disposed on the corresponding peripheral wires, and each of the second covers is disposed on the corresponding marks.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: arranging the metal nanowire layer in the display area and the peripheral area; and then disposing the metal layer on the peripheral region, wherein the metal layer is disposed on the second portion.

In some embodiments of the present invention, disposing the metal layer and the metal nanowire layer includes: arranging the metal layer on the peripheral area; and then arranging the metal nanowire layer in the display area and the peripheral area, wherein the first part is positioned in the display area and formed on the substrate, and the second part is positioned in the peripheral area and formed on the metal layer.

In some embodiments of the present invention, the etching solution comprises 1.0-5.0 wt% of hydrogen peroxide, 0.1-0.6 wt% of acids, 2.0-7.0 wt% of metal corrosion inhibitors and/or 3.0-8.0 wt% of stabilizers.

In some embodiments of the present invention, the patterning step further includes forming a plurality of marks on the metal layer by using the etching solution, the etching layers include a plurality of first intermediate layers and a plurality of second intermediate layers, each of the first intermediate layers is disposed between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is disposed between the corresponding marks and the substrate.

In some embodiments of the present invention, a film layer is further disposed.

In some embodiments of the present invention, the fabrication method may be performed on one or both sides of the substrate.

In some embodiments of the present invention, a touch panel is provided.

According to some embodiments of the present invention, an etching solution for performing a patterning step, comprises: 0.2 to 40 weight percent of hydrogen peroxide, 0.2 to 20 weight percent of acid, 0.1 to 10 weight percent of metal corrosion inhibitor and/or 0.1 to 10 weight percent of stabilizer.

In some embodiments of the invention, the acid comprises an organic acid, an inorganic acid, or a combination thereof.

In some embodiments of the invention, the organic acid comprises at least one of a carboxylic acid, a dicarboxylic acid, a tricarboxylic acid, an alkyl carboxylic acid, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, benzoic acid, trifluoroacetic acid, propionic acid, and butyric acid.

In some embodiments of the invention, the inorganic acid comprises at least one of phosphoric acid, nitric acid, acetic acid, and hydrochloric acid.

In some embodiments of the invention, the metal corrosion inhibitor comprises at least one of a nitrogen-containing, sulfur-containing, or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole, and methylbenzotriazole.

In some embodiments of the present invention, the stabilizer comprises at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide.

According to some embodiments of the present invention, an etching solution for performing a patterning step, comprises: 0.01 to 50 weight percent of hydrogen peroxide, 0.1 to 10 weight percent of metal corrosion inhibitor and/or 0.1 to 10 weight percent of stabilizer.

According to some embodiments of the present invention, a method for manufacturing a touch panel includes: providing a substrate, wherein the substrate is provided with a display area and a peripheral area; arranging a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is positioned in the display area, and a second part of the metal nanowire layer and the metal layer are positioned in the peripheral area; and performing a patterning step, wherein the patterning step comprises etching the metal nanowire layer with an etching solution, and etching the metal layer with another etching solution to form a plurality of peripheral leads on the metal layer and simultaneously form a plurality of etching layers on the second part of the metal layer, wherein the etching solution comprises 0.01-50 wt% of hydrogen peroxide, 0.1-10 wt% of a metal corrosion inhibitor and/or 0.1-10 wt% of a stabilizer.

Drawings

Fig. 1A to 1C are schematic diagrams illustrating steps of a method for manufacturing a touch panel according to some embodiments of the invention.

Fig. 2 is a schematic top view of a touch panel according to some embodiments of the invention.

Fig. 2A is a schematic cross-sectional view taken along line a-a of fig. 2.

Fig. 2B is a schematic cross-sectional view taken along line B-B of fig. 2.

Fig. 3 is a schematic top view of an assembled touch panel and a flexible circuit board according to some embodiments of the invention.

Fig. 4 is a schematic view of a touch panel according to another embodiment of the invention.

Fig. 5 is a schematic top view of a touch panel according to another embodiment of the invention.

Fig. 5A is a schematic cross-sectional view taken along line a-a of fig. 5.

Fig. 6A to 6C are schematic diagrams illustrating steps of a method for manufacturing a touch panel according to some embodiments of the invention.

Fig. 7 is a schematic top view of a touch panel according to another embodiment of the invention.

Fig. 7A is a schematic cross-sectional view taken along line a-a of fig. 7.

Fig. 7B is a schematic sectional view taken along line B-B of fig. 7.

Fig. 8 is a schematic view of a touch panel according to another embodiment of the invention.

Fig. 9 is a schematic top view of a touch panel according to another embodiment of the invention.

Fig. 9A is a schematic cross-sectional view taken along line a-a of fig. 9.

Fig. 10 is a schematic top view of a touch panel according to another embodiment of the invention.

Fig. 11 is a schematic top view of a touch panel according to another embodiment of the invention.

Fig. 12 is a SEM image after etching according to the present invention.

Fig. 13A to 13E are schematic views illustrating steps of another method for manufacturing a touch panel according to some embodiments of the invention.

Description of reference numerals:

100: touch panel

110: substrate

120: peripheral lead wire

122: side surface

124: upper surface of

140: marking

142: side surface

144: upper surface of

130: film layer

136: non-conductive region

160: shielded conductor

170: flexible circuit board

ML: metal layer

NWL: metal nanowire layer

PL: patterned layer

M1: a first intermediate layer

M1L: side surface

M2: second intermediate layer

M2L: side surface

VA: display area

PA: peripheral zone

BA: bonding region

TE 1: first touch electrode

TE 2: second touch electrode

TE: touch electrode

C1: first cover

C1L: side surface

C2: second cover

C2L: side surface

D1: a first direction

D2: second direction

Detailed Description

In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, some conventional structures and components are shown in simplified schematic form in the drawings.

As used herein, "about," "about," or "approximately" generally means that the numerical error or range is within twenty percent, preferably within ten percent, and more preferably within five percent. Unless expressly stated otherwise, all numerical values mentioned are to be regarded as approximations, i.e., as having the error or range indicated by "about", "about" or "approximately".

The invention provides an etching solution, which comprises hydrogen peroxide (about 0.2-40 wt%), acids (about 0.2-20 wt%), a metal corrosion inhibitor (about 0.1-10 wt%) and/or a stabilizer (about 0.1-10 wt%). By using the above etching solution, the first cover C1 can be disposed on theupper surface 124 of theperipheral lead 120 by a one-step etching process, so that the first cover C1 and theperipheral lead 120 can be formed at predetermined positions without aligning the upper and lower layers of materials, thereby reducing or avoiding the need for an alignment error region in the manufacturing process, reducing the width of the peripheral region PA, and further achieving the narrow frame requirement of the display. The etching solution of the invention also comprises a solvent (about 20 wt% -99.9 wt%).

The invention also provides an etching solution, which comprises 0.01-50 wt% of hydrogen peroxide, 0.1-10 wt% of metal corrosion inhibitor and/or 0.1-10 wt% of stabilizer. The etching solution selectively etches the metal nanowire layer NWL only, but not the metal layer ML, and the first cover C1 is arranged on theupper surface 124 of theperipheral lead 120 by step etching, so that the first cover C1 and theperipheral lead 120 can be formed at a preset position without aligning the upper layer material and the lower layer material, and the requirement of arranging an alignment error area in the manufacturing process can be reduced or avoided, thereby reducing the width of the peripheral area PA and further meeting the requirement of a narrow frame of a display. The etching solution of the invention also comprises a solvent (about 30 wt% -99.9 wt%).

Please refer to fig. 2 to 2B, which are schematic top view and schematic cross-sectional view of atouch panel 100 according to some embodiments of the present invention. Thetouch panel 100 includes asubstrate 110, aperipheral lead 120, a first cover C1, a patterned layer PL, and a touch sensing electrode TE. Referring to fig. 2, thesubstrate 110 has a display area VA and a peripheral area PA disposed at a side of the display area VA, for example, the peripheral area PA may be a frame-shaped area disposed at a periphery (i.e. covering a right side, a left side, an upper side and a lower side) of the display area VA, but in other embodiments, the peripheral area PA may be an L-shaped area disposed at the left side and the lower side of the display area VA. As shown in fig. 2, the present embodiment has eight groups ofperipheral wires 120 and the first covers C1 corresponding to theperipheral wires 120 are disposed on the peripheral area PA of thesubstrate 110; the touch sensing electrode TE is substantially disposed in the display area VA of thesubstrate 110.

Referring to fig. 2, thetouch panel 100 further includes amark 140 and a second cover C2, and in the embodiment, two sets ofmarks 140 and a second cover C2 corresponding to themarks 140 are disposed in the peripheral area PA of thesubstrate 110. The number of the peripheral leads 120, themarks 140, the first cover C1, the second cover C2 and the touch sensing electrodes TE may be one or more, and the numbers drawn in the following embodiments and the drawings are only for illustrative purposes and do not limit the present invention.

Specifically, referring to fig. 1A to 1C, thetouch panel 100 according to the embodiment of the invention can be manufactured as follows: first, asubstrate 110 having a peripheral area PA and a display area VA defined in advance is provided. Then, forming a metal layer ML in the peripheral area PA (as shown in fig. 1A); then, forming a metal Nanowire (NWL) layer in the peripheral region PA and the display region VA (as shown in fig. 1B); then, forming a patterned layer PL on the metal nanowire layer NWL (as shown in fig. 1C); then, patterning is performed according to the patterned layer PL to form a patterned metal layer ML and a patterned metal nanowire layer NWL. This will be described in more detail below.

Referring to fig. 1A, a metal layer ML is formed on the peripheral region PA of thesubstrate 110, and the metal layer ML may be patterned into theperipheral wires 120. In detail, in some embodiments of the present invention, the metal layer ML may be made of a metal with better conductivity, preferably a single-layer metal structure, such as a silver layer, a copper layer, etc.; or a multi-layer conductive structure, such as molybdenum/aluminum/molybdenum, copper/nickel, titanium/aluminum/titanium, molybdenum/chromium, etc., which is preferably opaque, such as having a light Transmission of less than about 90% for visible light (e.g., wavelengths between 400nm and 700 nm).

In the present embodiment, the metal may be formed on thesubstrate 110 by sputtering (such as but not limited to physical sputtering, chemical sputtering, etc.). The metal layer ML may be selectively formed in the peripheral region PA directly instead of the display region VA, or may be formed entirely in the peripheral region PA and the display region VA, and then the metal layer ML in the display region VA is removed by etching.

In one embodiment, the copper layer is deposited on the peripheral area PA of thesubstrate 110 by electroless plating, i.e., under the condition of no external current, by using a suitable reducing agent, metal ions in the plating solution are reduced to metal under the catalysis of a metal catalyst and plated on the surface of the metal ions, which is called electroless plating (electroless plating) or autocatalytic plating (autocatalytic plating), so the metal layer ML of the embodiment can be called electroless plating, electroless plating or autocatalytic plating. Specifically, for example, a plating solution whose main component is copper sulfate may be used, and the composition thereof may be, but is not limited to: copper sulfate (copper sulfate) at a concentration of 5g/L, ethylenediaminetetraacetic acid (ethylenediamine tetraacetic acid) at a concentration of 12g/L, formaldehyde (formaldehyde) at a concentration of 5g/L, the pH of the electroless copper plating solution was adjusted to about 11 to 13 with sodium hydroxide (sodium hydroxide), the plating bath temperature was about 50 to 70 ℃, and the reaction time for immersion was 1 to 5 minutes. In one embodiment, a catalytic layer (not shown) may be formed on the peripheral area PA of thesubstrate 110, and since the catalytic layer is not in the display area VA, the copper layer is deposited only in the peripheral area PA and is not formed in the display area VA. During the electroless plating reaction, the copper material can nucleate on the catalytic layer with catalytic/activating capability, and then the copper film can grow continuously by the self-catalysis of copper.

Next, referring to fig. 1B, a metal nanowire layer NWL at least including metal nanowires, such as a silver nanowire (silver nanowire) layer, a gold nanowire (gold nanowire) layer, or a copper nanowire (copper nanowire) layer, is coated on the peripheral region PA and the display region VA; a first portion of the metal nanowire layer NWL is located in the display area VA, the first portion is mainly formed on thesubstrate 110, and a second portion in the peripheral area PA is mainly formed on the metal layer ML. The embodiment is embodied as follows: the dispersion or slurry (ink) having the metal nanowires is formed on thesubstrate 110 by a coating method, and is dried to coat the metal nanowires on the surfaces of thesubstrate 110 and the metal layer ML, thereby forming the metal nanowire layer NWL disposed on thesubstrate 110 and the metal layer ML. After the curing/drying step, the solvent and other substances are volatilized, and the metal nanowires are randomly distributed on the surface of thesubstrate 110 and the metal layer ML; preferably, the metal nanowires are fixed on the surface of thesubstrate 110 and the metal layer ML without falling off to form the metal nanowire layer NWL, and the metal nanowires may contact each other to provide a continuous current path, thereby forming a conductive network (conductive network).

In embodiments of the present invention, the dispersion may be water, alcohol, ketone, ether, hydrocarbon or aromatic solvent (benzene, toluene, xylene, etc.); the dispersion may also contain additives, surfactants or binders such as carboxymethylcellulose (CMC), 2-Hydroxyethylcellulose (HEC), Hydroxypropylmethylcellulose (HPMC), sulfonates, sulfates, disulfonates, sulfosuccinates, phosphates or fluorosurfactants, and the like. The dispersion or slurry containing the metal nanowires can be formed on the surface of thesubstrate 110 and the metal layer ML by any method, such as but not limited to: screen printing, nozzle coating, roller coating and other processes; in one embodiment, the dispersion or slurry containing the metal nanowires can be applied to the surface of the continuously suppliedsubstrate 110 and the metal layer ML by a roll-to-roll (RTR) process.

As used herein, "metal nanowires (metal nanowires)" is a collective term referring to a collection of metal wires comprising a plurality of elemental metals, metal alloys or metal compounds (including metal oxides), wherein the number of metal nanowires contained does not affect the scope of protection claimed by the present invention; and at least one cross-sectional dimension (i.e., cross-sectional diameter) of the single metal nanowire is less than about 500nm, preferably less than about 100nm, and more preferably less than about 50 nm; the metal nanostructures referred to herein as "wires" have a high aspect ratio, such as between about 10 and 100,000, and more particularly, the metal nanowires may have an aspect ratio (length: diameter of cross section) of greater than about 10, preferably greater than about 50, and more preferably greater than about 100; the metal nanowires can be any metal including, but not limited to, silver, gold, copper, nickel, and gold-plated silver. Other terms such as silk (silk), fiber (fiber), tube (tube), etc. having the same dimensions and high aspect ratios are also within the scope of the present invention.

Next, referring to fig. 1C, a patterned layer PL is formed on the metal nanowire layer NWL. In one embodiment, the patterned layer PL is formed by using a flexible printing (flexography) technique to directly form a material with a patterned structure on the metal nanowire layer NWL; in other words, the patterned layer PL has a specific pattern while being formed on the working surface (in this embodiment, the metal nanowire layer NWL), so that a patterning step for the coated material is not required. According to one or more embodiments of the present invention, the patterned layer PL is formed by transferring the material to be printed onto the metal nanowire layer NWL according to a specific pattern by letterpress printing, intaglio printing, screen printing or the like. The patterned layer PL formed according to the above method may have a printing side different from a side formed by a conventional process such as exposure, development or etching. In one embodiment, the patterned layer PL may be fabricated by photolithography and etching processes using photoresist, dry film, and the like.

The patterned layer PL may be formed in the peripheral area PA according to the above-mentioned method, or may be formed in the peripheral area PA and the display area VA. The patterned layer PL (also referred to as a second patterned layer) in the peripheral area PA is mainly used as an etching mask in the peripheral area PA for patterning the metal nanowire layer NWL and the metal layer ML in the peripheral area PA in the following steps, and the patterned layer PL (also referred to as a first patterned layer) in the display area VA is mainly used as an etching mask in the display area VA for patterning the metal nanowire layer NWL in the display area VA in the following steps.

Embodiments of the present invention are not limited to the material of the patterned layer PL (i.e. the aforementioned material to be printed), and examples of the polymer material include the following: various photoresist materials, bottom coating materials, outer coating materials, protective layer materials, insulating layer materials and the like, and the high polymer materials can be phenolic resin, epoxy resin, acrylic resin, PU resin, ABS resin, amino resin, silicone resin and the like. The material of the patterned layer PL may be photo-curable or thermal-curable, in terms of material characteristics. In one embodiment, the material of the patterned layer PL has a viscosity of about 200 cps to about 1500cps and a solid content of about 30-100%.

Then, patterning is performed, and after the patterning step, thetouch panel 100 shown in fig. 2 can be manufactured. In one embodiment, the metal layer ML and the metal nanowire layer NWL are patterned in the same process by using an etching solution capable of simultaneously etching the metal nanowire layer NWL and the metal layer ML in the peripheral region PA in cooperation with an etching mask formed by the patterned layer PL (also referred to as a second patterned layer). As shown in fig. 2 and 2B, the patterned metal layer ML formed on the peripheral region PA is theperipheral circuit 120, and the patterned metal nanowire layer NWL constitutes an etching layer, which is located on theperipheral circuit 120 and can be referred to as a first cover C1; in other words, after the patterning step, the peripheral area PA forms the first coverages C1 composed of the second portions of the metal nanowire layers NWL and theperipheral lines 120 composed of the metal layer ML. In another embodiment, an etching layer formed by the second portion of the metal nanowire layer NWL, and theperipheral circuit 120 and themark 140 formed by the metal layer ML (see fig. 2, 2A and 2B) may be fabricated on the peripheral region PA, wherein the etching layer may include a first cover C1 and a second cover C2, the first cover C1 is disposed on the correspondingperipheral circuit 120, and the second cover C2 is disposed on thecorresponding mark 140. In one embodiment, the metal nanowire layer NWL and the metal layer ML can be etched simultaneously, meaning that the ratio of the etching rates of the metal nanowire layer NWL and the metal layer ML is between about 0.1-10 or 0.01-100.

According to one embodiment, where the metal nanowire layer NWL is a layer of nano-silver and the metal layer ML is a layer of copper, the etching solution can be used to etch copper and silver, for example, the etching solution can comprise hydrogen peroxide (about 1.0-2.0, 5.0-10.0, 20.0-40.0, or 1.0-10.0 wt%), acids (about 1.0-5.0, 1.0-20.0, or 0.1-10.0 wt%), metal corrosion inhibitors (about 0.1-10.0, 1.0-10.0, or 2.0-7.0 wt%), and/or stabilizers (about 0.1-10.0, 1.0-10.0, or 3.0-8.0 wt%). The acids may comprise organic acids, inorganic acids, or a combination thereof, wherein the organic acids may comprise at least one of carboxylic acids, dicarboxylic acids, tricarboxylic acids, alkyl carboxylic acids, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, benzoic acid, trifluoroacetic acid, propionic acid, and butyric acid, for example; the inorganic acid may include at least one of phosphoric acid, nitric acid, acetic acid, hydrochloric acid, and the like. The metal corrosion inhibitor may comprise at least one of a nitrogen-, sulfur-or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole and methylbenzotriazole. The stabilizer may comprise at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide. According to one embodiment, where the metal nanowire layer NWL is a layer of nano-silver and the metal layer ML is a layer of electroless copper, the etching solution may be used to etch copper and silver, for example, the etching solution may comprise hydrogen peroxide (about 1.0-10.0 wt%), acids (about 1.0-5.0 wt%), metal corrosion inhibitors (about 2.0-7.0 wt%), and/or stabilizers (about 3.0-8.0 wt%). According to one embodiment, in the case where the metal nanowire layer NWL is a nano-silver layer and the metal layer ML is an electroless copper-nickel layer, the etching solution may be used to etch copper-nickel and silver, for example, the etching solution may comprise hydrogen peroxide (about 0.2-10.0 wt%), acids (about 1.0-20.0 wt%), metal corrosion inhibitors (about 2.0-5.0 wt%), and/or stabilizers (about 3.0-5.0 wt%).

In the patterning step, the method may further include: the patterning of the metal nanowire layer NWL in the display area VA is performed at the same time. In other words, as shown in fig. 1C, the etching solution can be used to pattern the first portion of the metal nanowire layer NWL of the display area VA to form the touch sensing electrode TE in the display area VA, and the touch sensing electrode TE can be electrically connected to theperipheral lead 120, in cooperation with the etching mask formed by the patterned layer PL (i.e., the first patterned layer). Specifically, the touch sensing electrode TE may also be a metal nanowire layer at least including metal nanowires, that is, the patterned metal nanowire layer NWL forms the touch sensing electrode TE in the display area VA and forms the first cover C1 in the peripheral area PA, so that the touch sensing electrode TE can be electrically connected to theperipheral lead 120 through the contact between the first cover C1 and theperipheral lead 120 for signal transmission. The metal nanowire layer NWL also forms a second cover C2 on theupper surface 144 of themark 140 in the peripheral region PA, and themark 140 can be broadly interpreted as a pattern with a non-electrical function, but not limited thereto. In some embodiments of the present invention, theperipheral lead 120 and themark 140 may be made of the same metal layer ML (i.e., the two are made of the same metal material, such as the aforementioned electroless copper plating layer or sputtering copper plating layer); the touch sensing electrode TE, the first cover C1 and the second cover C2 may be fabricated from the same metal nanowire layer NWL.

In an embodiment, the width of the pattern in the display area VA can be at least 100um, so the etching solution does not cause an undercut problem to the metal nanowire layer NWL in the display area VA.

In another embodiment, when the patterning step is performed, the step-by-step etching is performed in the peripheral area PA by using a selective etching solution, and the etching solution is only used for etching the metal nanowire layer NWL, but not the metal layer ML. In detail, the metal nanowire layer NWL of the peripheral area PA and the display area VA is etched first using an etching liquid, and then the metal layer ML of the peripheral area PA is etched using another etching liquid. The patterned metal layer ML and the patterned metal nanowire layer NWL are formed in the same process by using an etching mask formed by the patterned layer PL (also referred to as a second patterned layer). As shown in fig. 2 and 2B, the patterned metal layer ML formed on the peripheral region PA is theperipheral circuit 120, and the patterned metal nanowire layer NWL constitutes an etching layer, which is located on theperipheral circuit 120 and can be referred to as a first cover C1; in other words, after the patterning step, the peripheral area PA forms the first coverages C1 composed of the second portions of the metal nanowire layers NWL and theperipheral lines 120 composed of the metal layer ML. In another embodiment, an etching layer formed by the second portion of the metal nanowire layer NWL, and theperipheral circuit 120 and themark 140 formed by the metal layer ML (see fig. 2, 2A and 2B) may be fabricated on the peripheral region PA, wherein the etching layer may include a first cover C1 and a second cover C2, the first cover C1 is disposed on the correspondingperipheral circuit 120, and the second cover C2 is disposed on thecorresponding mark 140.

According to another embodiment, in the case that the metal nanowire layer NWL is a nano-silver layer and the metal layer ML is a copper layer, the etching solution is used only for etching silver and not copper, for example, the etching solution comprises hydrogen peroxide (0.01-50 wt%), a metal corrosion inhibitor (0.1-10 wt%) and/or a stabilizer (0.1-10 wt%). The metal corrosion inhibitor may comprise at least one of a nitrogen-, sulfur-or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole and methylbenzotriazole. The stabilizer may comprise at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide.

The etching solution does not etch the metal layer ML, so that the problems that the metal nanowire layer NWL in the peripheral area PA and the display area VA is not completely etched or the metal layer ML in the peripheral area PA is undercut are avoided.

After the step of patterning, may further include: patterned layer PL is removed.

In addition, before or after the etching step, a film layer and a metal nanowire layer NWL (such as the first cover C1, the second cover C2 or the touch sensing electrode TE) may be coated to form a composite structure having certain specific chemical, mechanical and optical properties, such as adhesion of the touch sensing electrode TE, the first cover C1, the second cover C2 and thesubstrate 110, or better physical mechanical strength, so that the film layer may also be referred to as a matrix (matrix). In yet another aspect, the touch sensing electrode TE, the first cover C1 and the second cover C2 are made of some specific polymers to provide additional scratch and abrasion resistant surface protection, in which case the film may also be referred to as an overcoat (overcoat), and the touch sensing electrode TE, the first cover C1 and the second cover C2 may have higher surface strength to improve scratch resistance by using materials such as polyacrylate, epoxy, polyurethane, polysilane, polysiloxane, poly (silicon-acrylic), and the like. However, the above is only to illustrate the possibility of other additional functions/names of the film layer and is not to be construed as limiting the invention. It should be noted that, in one embodiment, the polymer used to fabricate the film layer may penetrate into the metal nanowires to form the filler before curing or in a pre-cured state, and the metal nanowires may be embedded into the film layer after the polymer is cured. That is, the present invention does not limit the structure between the film layer and the metal nanowire layer NWL (e.g., the first cover C1, the second cover C2, or the touch sensing electrode TE).

In one embodiment, the film layer may be a photo-curable material with high transmittance, low dielectric constant and low haze, so as to maintain the transmittance of the touch sensing electrode TE in the display area VA between about 88% and 94%, the haze between about 0 and 2 and the area resistance between about 10 and 150 ohms/square (ohm/square), and the photoelectric properties of the film layer enable the combination of the film layer and the metal nanowire layer NWL to meet the optical and touch sensing requirements of the display area VA. For example, the composite structure may have a light Transmission (Transmission) of greater than about 80% for visible light (e.g., wavelengths between about 400nm and 700nm) and a surface resistivity (surface resistance) between about 10 and 1000 ohms/square (ohm/square); preferably, the composite structure has a light Transmission (Transmission) of greater than about 85% in visible light (e.g., wavelengths between about 400nm and 700nm) and a surface resistivity (surface resistance) between about 50 and 500 ohms/square (ohm/square). In this embodiment, a curing step (e.g., UV curing) may also be included.

Fig. 2 is a schematic top view of atouch panel 100 according to an embodiment of the invention, and fig. 2A and 2B are cross-sectional views taken along lines a-a and B-B of fig. 2, respectively. Referring to fig. 2A, as shown in fig. 2A, theperipheral wires 120 and themarks 140 are disposed in the peripheral region PA, and the first cover C1 and the second cover C2 are respectively formed to cover theupper surfaces 124 and 144 of theperipheral wires 120 and themarks 140. In some embodiments of the present invention, the metal nanowires may be silver nanowires. For convenience of illustration, the cross-section of theperipheral lead 120 and themark 140 is a quadrilateral (e.g., a rectangle as drawn in fig. 2A), but the configuration or number of theside surface 122 and theupper surface 124 of theperipheral lead 120 and theside surface 142 and theupper surface 144 of themark 140 may vary according to practical applications, and is not limited by the text and the drawings.

In the present embodiment, themark 140 is a bonding area BA disposed in the peripheral area PA, which is a mark for aligning an external circuit board, such as aflexible circuit board 170, with thetouch panel 100 in a step of connecting theflexible circuit board 170 to the touch panel 100 (i.e., a bonding step) (please refer to fig. 2). However, the present invention is not limited to the placement position or function of themark 140, for example, themark 140 may be any inspection mark, pattern or label required in the manufacturing process, and all such features are within the scope of the present invention. Theindicia 140 may have any possible shape, such as a circle, a quadrilateral, a cross, an L-shape, a T-shape, and so forth. On the other hand, the portion of theperipheral lead 120 extending to the bonding area BA may also be referred to as a connection portion (bonding section), and the upper surface of the connection portion at the bonding area BA is also covered by the first cover C1, as in the previous embodiment.

As shown in fig. 2A and 2B, in the peripheral region PA, anon-conductive region 136 is disposed between adjacentperipheral wires 120 to electrically isolate the adjacentperipheral wires 120 and thus avoid short circuit. That is, the side surfaces 122 of the adjacentperipheral wires 120 have thenon-conductive region 136 therebetween, and in the present embodiment, thenon-conductive region 136 is a gap (gap) to isolate the adjacentperipheral wires 120. Theside surface 122 of theperipheral lead 120 and the side surface C1L of the first cover C1 are a common etching surface and aligned with each other, that is, theside surface 122 of theperipheral lead 120 and the side surface C1L of the first cover C1 are formed according to the printing side surface of the patterned layer PL in the same etching step by using the patterned layer PL as a reference, so that the printing side surface and the common etching surface are aligned with each other; similarly,side 142 ofindicium 140 is in common with and aligned with side C2L of second overlay C2, and the printed side of patterned layer PL is also in common with the etched side. In one embodiment, the side C1L of the first cap C1 and the side C2L of the second cap C2 are not covered by the metal nanowires due to the etching process. Furthermore, the patterned layer PL, theperipheral wires 120 and the first cover C1 have the same or similar patterns and sizes, such as long and straight patterns, and the same or similar widths; the patterned layer PL,indicia 140 and second cover C2 may likewise have the same or similar patterns and dimensions, such as circles, quadrilaterals, etc., all of the same or similar radius, or other same or similar patterns of crosses, L-shapes, T-shapes, etc.

As shown in fig. 2B, in the display area VA, anon-conductive area 136 is disposed between the adjacent touch sensing electrodes TE to electrically block the adjacent touch sensing electrodes TE and thus avoid short circuit. That is, the sidewall of the adjacent touch sensing electrode TE has anon-conductive region 136 therebetween, and in the present embodiment, thenon-conductive region 136 is a gap (gap) to isolate the adjacent touch sensing electrode TE; in one embodiment, the above-mentioned etching method can be used to fabricate the gap between the adjacent touch sensing electrodes TE. In the present embodiment, the touch sensing electrode TE and the first cover C1 can be fabricated by using the same metal nanowire layer NWL (e.g. a silver nanowire layer, or a composite layer formed by a silver nanowire layer and a film layer), so that at the boundary between the display area VA and the peripheral area PA, the metal nanowire layer NWL forms a climbing structure, so that the metal nanowire layer NWL can be shaped to cover theupper surface 124 of theperipheral lead 120, thereby forming the first cover C1.

In some embodiments of the present invention, the first cover C1 of thetouch panel 100 is disposed on theupper surface 124 of theperipheral wires 120, and the first cover C1 and theperipheral wires 120 are formed in the same etching process, so that the requirement of disposing an alignment error area in the process can be reduced or avoided, thereby reducing the width of the peripheral area PA and further achieving the narrow frame requirement of the display; the etching solution provided by the present invention can etch a circuit for the material layers of different areas, such as the metal/nano silver in the peripheral area PA and the nano silver in the display area VA, and has good linearity and control of lateral erosion amount (CD bias), and no material residue in thenon-conductive area 136. Specifically, the width of the peripheral leads 120 of thetouch panel 100 according to some embodiments of the present invention is about 5um to 30um, the distance between adjacentperipheral leads 120 is about 5um to 30um, or the width of the peripheral leads 120 of thetouch panel 100 is about 3um to 20um, the distance between adjacentperipheral leads 120 is about 3um to 20um, and the width of the peripheral area PA can also reach a size smaller than about 2mm, which is reduced by about 20% or more compared with the conventional touch panel product.

In some embodiments of the present invention, thetouch panel 100 further includes a second cover C2 and amark 140, the second cover C2 is disposed on theupper surface 144 of themark 140, and the second cover C2 and themark 140 are formed in the same etching process.

Fig. 3 shows an assembly structure after theflexible circuit board 170 and thetouch panel 100 are aligned, wherein electrode pads (not shown) of theflexible circuit board 170 may be electrically connected to the peripheral leads 120 of the bonding area BA on thesubstrate 110 through a conductive adhesive (not shown), such as an anisotropic conductive adhesive. In some embodiments, the first cover C1 in the bonding area BA may be opened with an opening (not shown) to expose theperipheral wires 120, and a conductive adhesive (e.g., an anisotropic conductive adhesive) may be filled in the opening of the first cover C1 to directly contact theperipheral wires 120 to form a conductive path. In the present embodiment, the touch sensing electrodes TE are arranged in a non-staggered manner. For example, the touch sensing electrode TE is a strip-shaped electrode extending along the first direction D1 and having a width varying along the second direction D2, and the touch sensing electrode TE is not staggered with each other. In this embodiment, the touch sensing electrodes TE are configured as a single layer, wherein the touch position can be obtained by detecting the capacitance change of each touch sensing electrode TE.

The present invention can also apply the above method to a double-sided touch panel 100 manufactured by double-sided substrate 110, for example, the method can be manufactured as follows: first, asubstrate 110 having a peripheral area PA and a display area VA defined in advance is provided. Then, forming a metal layer ML on the first and second surfaces (such as the upper surface and the lower surface) of thesubstrate 110, where the metal layer ML is located in the peripheral region PA; then, respectively forming metal nanowire (metal nanowire) layers NWL in the peripheral area PA and the display area VA of the first surface and the second surface; then forming a patterning layer PL on the metal nanowire layers NWL on the first surface and the second surface respectively; then, the first and second surfaces are patterned by using the etching solution according to the patterned layer PL, so as to form the touch sensing electrode TE and theperipheral lead 120 on the first and second surfaces, and the first cover C1 covers theperipheral lead 120, as shown in fig. 4. The detailed description of the present embodiment (for example, the composition parameters of the etching solution) can be referred to the above, and will not be repeated herein.

According to some embodiments of the present invention, a double-sided touch panel is provided, and a manufacturing method thereof may be formed by laminating two sets of single-sided touch panels in the same direction or in opposite directions. By way of example of the reverse stacking, the touch electrodes of the first set of single-sided touch panels are disposed upward (for example, closest to the user, but not limited thereto), the touch electrodes of the second set of single-sided touch panels are disposed downward (for example, farthest from the user, but not limited thereto), and the substrates of the two sets of touch panels are assembled and fixed by optical glue or other similar adhesives to form the double-sided touch panel. The detailed description of the present embodiment (for example, the composition parameters of the etching solution) can be referred to the above, and will not be repeated herein.

Fig. 5 is atouch panel 100 according to an embodiment of the invention, which includes asubstrate 110, touch sensing electrodes TE formed on the upper and lower surfaces of the substrate 110 (i.e., a first touch sensing electrode TE1 and a second touch sensing electrode TE2 formed on a metal nanowire layer NWL), andperipheral circuits 120 formed on the upper and lower surfaces of thesubstrate 110; for simplicity of the drawing, fig. 5 does not show the first and second covers C1, C2. The first touch sensing electrode TE1 of the display area VA and theperipheral circuit 120 of the peripheral area PA are electrically connected to each other to transmit signals when viewed from the upper surface of thesubstrate 110; similarly, the second touch sensing electrode TE2 of the display area VA and theperipheral circuit 120 of the peripheral area PA are electrically connected to each other to transmit signals when viewed from the lower surface of thesubstrate 110. In addition, the first touch sensing electrode TE1 and the second touch sensing electrode TE2 are formed in a staggered manner; theperipheral circuit 120 is made of a metal layer ML, on which a first cover C1 (also shown in fig. 5A) is formed. The embodiment may further include amark 140 and a second cover C2 corresponding to themark 140 disposed on the peripheral region PA of thesubstrate 110, which can be referred to above specifically.

Referring to fig. 5 in conjunction with the cross-sectional view shown in fig. 5A, in an embodiment, the first touch sensing electrode TE1 is substantially located in the display area VA, and may include a plurality of long and straight sensing electrodes extending along the same direction (e.g., the first direction D1), and the area removed by using the etching solution may be defined as anon-conductive area 136 to electrically block the adjacent sensing electrodes. Similarly, the second touch sensing electrode TE2 is substantially located in the display area VA, and may include a plurality of sensing electrodes extending in the same direction (e.g., the second direction D2), and the removed area may be defined as anon-conductive area 136 to electrically block adjacent sensing electrodes. The first touch sensing electrode TE1 and the second touch sensing electrode TE2 are staggered in structure, and can constitute a touch sensing electrode TE for sensing a touch or controlling a gesture.

Referring to fig. 6A to 6C, a touch panel according to another embodiment of the invention can be manufactured as follows: first, asubstrate 110 having a peripheral area PA and a display area VA defined in advance is provided. Then, forming a metal nanowire (metal nanowire) layer NWL in the peripheral area PA and the display area VA; then, forming a metal layer ML in the peripheral area PA (see fig. 6A); then, a patterned layer PL is formed on the metal nanowire layer NWL (see fig. 6B); then, patterning is performed according to the patterned layer PL to form a patterned metal layer ML and a patterned metal nanowire layer NWL (see fig. 6C). The difference between the present embodiment and the previous embodiments is at least in the forming sequence of the metal layer ML and the metal nanowire layer NWL, that is, the present embodiment first manufactures the metal nanowire layer NWL, and then manufactures the metal layer ML. In the present embodiment, the pattern of the patterned layer PL is transferred to the metal layer ML and the metal nanowire layer NWL by etching, for example.

The present embodiment can also use an etching solution for etching the copper (i.e., metal layer ML) and silver nanowire layer (i.e., metal nanowire layer NWL), for example, the etching solution comprises hydrogen peroxide (about 1.0-2.0, 5.0-10.0, 20.0-40.0, or 1.0-5.0 wt%), acid (about 0.1-0.6, 1.0-5.0, 1.0-20.0, or 0.1-10.0 wt%), metal corrosion inhibitor (about 0.1-10.0, 1.0-10.0, or 2.0-7.0 wt%), and/or stabilizer (about 0.1-10.0, 1.0-10.0, or 3.0-8.0 wt%). The acids may comprise organic acids, inorganic acids, or a combination thereof, wherein the organic acids may comprise at least one of carboxylic acids, dicarboxylic acids, tricarboxylic acids, alkyl carboxylic acids, acetic acid, oxalic acid, mellitic acid, formic acid, chloroacetic acid, benzoic acid, trifluoroacetic acid, propionic acid, and butyric acid, for example; the inorganic acid may include at least one of phosphoric acid, nitric acid, acetic acid, hydrochloric acid, and the like. The metal corrosion inhibitor may comprise at least one of a nitrogen-, sulfur-or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole and methylbenzotriazole. The stabilizer may comprise at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide. According to one embodiment, where the metal nanowire layer NWL is a layer of nano-silver and the metal layer ML is a layer of electroless copper, the etching solution may be used to etch copper and silver, for example, the etching solution may comprise hydrogen peroxide (about 1.0-5.0 wt%), acids (about 0.1-0.6 wt%), metal corrosion inhibitors (about 2.0-7.0 wt%), and/or stabilizers (about 3.0-8.0 wt%). According to one embodiment, in the case where the metal nanowire layer NWL is a nano-silver layer and the metal layer ML is an electroless copper-nickel layer, the etching solution may be used to etch copper-nickel and silver, for example, the etching solution may comprise hydrogen peroxide (about 0.2-10.0 wt%), acids (about 0.1-10.0 wt%), metal corrosion inhibitors (about 2.0-5.0 wt%), and/or stabilizers (about 3.0-5.0 wt%).

After the patterning step, a step of removing the patterned layer PL is further included. In particular embodiments, the stripping may be by an organic solvent or an alkaline stripper, such as: KOH, K₂CO₃And Propylene Glycol Methyl Ether Acetate (Propylene Glycol Methyl Ether Acetate; PGMEA). In other words, after the above steps, the patterned layer PL is removed without remaining in the structure of the product.

Referring to fig. 13A to 13E, in another embodiment, for the case where the metal nanowire layer NWL is first fabricated and then the metal layer ML is fabricated, the touch panel can be fabricated as follows: first, asubstrate 110 having a peripheral area PA and a display area VA defined in advance is provided. Next, a metal Nanowire (NWL) layer is formed in the peripheral region PA and the display region VA. Unlike the above embodiments, a metal layer ML is formed in the peripheral area PA and the display area VA (see fig. 13A); then, forming a patterned layer PL on the metal layer ML (see fig. 13B); then, patterning is performed according to the patterned layer PL to form a patterned metal layer ML and a patterned metal nanowire layer NWL. In this embodiment, when the patterning step is performed, the step-by-step etching is performed using a selective etching solution, and the etching solution is only used for etching the metal nanowire layer NWL, but not the metal layer ML. In detail, the metal layer ML of the peripheral area PA and the display area VA is first etched using another etching liquid (see fig. 13C), which etches only the metal layer ML but not the metal nanowire layer NWL, and then etched using an etching liquid (see fig. 13D). The patterned layer PL of the display area VA is removed, and the metal layer ML of the display area VA is etched using another etching solution to completely remove the metal layer ML of the display area VA (see fig. 13E). Finally, the patterned layer PL in the peripheral region PA is removed.

According to another embodiment, in the case that the metal nanowire layer NWL is a nano-silver layer and the metal layer ML is a copper layer, the etching solution is used only for etching silver and not copper, for example, the etching solution comprises hydrogen peroxide (0.01-50 wt%), a metal corrosion inhibitor (0.1-10 wt%) and/or a stabilizer (0.1-10 wt%). The metal corrosion inhibitor may comprise at least one of a nitrogen-, sulfur-or hydroxyl-containing, surface-active organic compound, mercaptobenzothiazole, benzotriazole and methylbenzotriazole. The stabilizer may comprise at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid, and polyacrylamide.

The etching solution does not etch the metal layer ML, so that the problems that the metal nanowire layer NWL in the peripheral area PA and the display area VA is not completely etched or the metal layer ML in the peripheral area PA is undercut are avoided.

A step of removing the patterned layer PL. In particular embodiments, the stripping may be by an organic solvent or an alkaline stripper, such as: KOH, K₂CO₃And Propylene Glycol Methyl Ether Acetate (Propylene Glycol Methyl Ether Acetate; PGMEA). In other words, after the above steps, the patterned layer PL is removed without remaining in the structure of the product.

The foregoing references to other detailed manufacturing methods of this embodiment, and the details are not repeated herein.

Referring to fig. 7, which shows the touch panel 100 (with the patterned layer PL removed) completed in the embodiment of the invention, fig. 7A and 7B are respectively a cross section a-A, B-B in fig. 7, where the cross section a-a shows a pattern in the peripheral area PA, and the cross section B-B shows a pattern in the peripheral area PA and the display area VA. As shown in fig. 7A and 7B, after the metal nanowire layer NWL and the metal layer ML in the peripheral area PA are subjected to an etching step (e.g., using the aforementioned one-time etching solution), a gap (i.e., a non-conductive area 136) may be formed, i.e., an etching layer formed by patterning the metal nanowire layer NWL and theperipheral circuit 120 formed by the metal layer ML are formed in the peripheral area PA; since the etching layer is located between theperipheral circuits 120 and thesubstrate 110, it can be referred to as the first interlayer M1, in other words, the first interlayer M1 is patterned under theperipheral circuits 120, and thenon-conductive region 136 is located between adjacentperipheral circuits 120; moreover, theside surface 122 of theperipheral wire 120 and the side surface M1L of the first intermediate layer M1 are a common etching surface and aligned with each other, that is, theside surface 122 of theperipheral wire 120 and the side surface M1L of the first intermediate layer M1 are formed by using the aforementioned one-time etching solution according to the side wall of the patterned layer PL in the same etching step using the side wall of the patterned layer PL as a reference in the patterning step. Because the structure layer of the peripheral area PA is patterned in the same step, the traditional alignment step can be omitted, and the requirement of setting an alignment error area in the manufacturing process is reduced or avoided, so that the width of the peripheral area PA is reduced, and the narrow frame requirement of the touch panel/the touch display is met.

In another embodiment, the peripheral area PA may have an etching layer formed by a metal nanowire layer NWL, and theperipheral circuit 120 and themark 140 formed by the metal layer ML, and the etching layer may include a first middle layer M1 and a second middle layer M2, the first middle layer M1 is disposed between theperipheral circuit 120 and thesubstrate 110, the second middle layer M2 is disposed between themark 140 and thesubstrate 110, and theside 142 of themark 140 and the side M2L of the second middle layer M2 are a common etching surface and aligned with each other.

As shown in fig. 7B, in the display area VA, the metal nanowire layer NWL also uses the patterned layer PL as an etching mask to form the touch sensing electrode TE in the patterning step. In the present embodiment, the metal nanowire layer NWL is patterned to form voids to formnon-conductive regions 136 between adjacent touch sensing electrodes TE. Furthermore, the touch sensing electrode TE can be electrically connected to theperipheral circuit 120 through the metal nanowire layer NWL extending to the peripheral region PA.

In another embodiment, thetouch panel 100 may include afilm layer 130 or a protection layer. For example, fig. 8 is a schematic view of thefilm 130 formed on the embodiment shown in fig. 7B. In one embodiment, thefilm 130 covers thetouch panel 100 comprehensively, for example, thefilm 130 may be disposed in the display area VA and the peripheral area PA to cover the touch sensing electrodes TE, theperipheral circuit 120 and/or themarks 140. As shown, in the peripheral area PA, thefilm 130 covers the firstperipheral wires 120, and thefilm 130 fills thenon-conductive area 136 between the adjacentperipheral wires 120, that is, thenon-conductive area 136 between the adjacentperipheral wires 120 has a filling layer made of the same material as thefilm 130. In addition, for a single set of correspondingperipheral wires 120 and first intermediate layer M1, thefilm layer 130 surrounds the single set of corresponding upper and lowerperipheral wires 120 and first intermediate layer M1. Similarly, for a single set of correspondingmarkers 140 and second intermediate layer M2, thefilm 130 surrounds the single set of correspondingmarkers 140 and second intermediate layer M2.

In the display area VA, thefilm layer 130 covers the touch sensing electrodes TE, and thefilm layer 130 fills thenon-conductive area 136 between the adjacent touch sensing electrodes TE, that is, thenon-conductive area 136 between the adjacent touch sensing electrodes TE has a filling layer made of the same material as thefilm layer 130 to isolate the adjacent touch sensing electrodes TE.

While the material of thefilm layer 130 in some embodiments of the present invention may be a non-conductive resin or other organic material, for example, thefilm layer 130 may be Polyethylene (PE), Polypropylene (PP), Polyvinyl butyral (PVB), Polycarbonate (PC), Acrylonitrile Butadiene Styrene (ABS), poly (3, 4-ethylenedioxythiophene) (PEDOT), poly (styrenesulfonic acid) (PSS), ceramic material, or the like. In one embodiment of the present invention, the film layer 130 may be the following polymers, but not the polymersThe method is limited to the following steps: polyacrylic resins such as polymethacrylates (e.g., poly (methyl methacrylate)), polyacrylates, and polyacrylonitriles; polyvinyl alcohol; polyesters (e.g., polyethylene terephthalate (PET), polyester naphthalate, and polycarbonate); polymers having high aromaticity, such as phenol-formaldehyde resins or cresol-formaldehyde, polystyrene, polyvinyltoluene, polyvinylxylene, polyimide, polyamide, polyamideimide, polyetherimide, polysulfide, polysulfone, polyphenylenes and polyphenylethers; polyurethanes (polyurethanes; PU); an epoxy resin; polyolefins (e.g., polypropylene, polymethylpentene, and cyclic olefins); cellulose; silicones and other silicon-containing polymers (e.g., polysilsesquioxanes and polysilanes); polyvinyl chloride (PVC); a polyacetate; polynorbornene; synthetic rubbers (e.g., ethylene-Propylene Rubber (EPR), styrene-Butadiene Rubber (SBR), ethylene-Propylene-Diene Monomer (EPDM), and fluoropolymers (e.g., polyvinylidene fluoride, polytetrafluoroethylene (TFE), or polyhexafluoropropylene), copolymers of fluoro-olefins and hydrocarbon olefins, etc. in other embodiments, silica, mullite, alumina, SiC, carbon fibers, MgO-Al, may be used₂O₃-SiO₂、Al₂O₃-SiO₂Or MgO-Al₂O₃-SiO₂-Li₂And O and the like. In some embodiments of the present invention, thefilm 130 is formed of an insulating material. In some embodiments of the present invention, thefilm 130 may be formed by spin coating, spray coating, printing, or the like. In some embodiments, the thickness of thefilm 130 is about 20 nm to 10 μm, or 50nm to 200 nm, or 30 to 100nm, for example, the thickness of thefilm 130 may be about 90 nm or 100 nm.

In addition, similar to the above, thefilm 130 may form a composite structure with the metal nanowires (e.g., the touch sensing electrode TE) to have certain specific chemical, mechanical and optical properties, such as adhesion between the metal nanowires and thesubstrate 110, or better physical mechanical strength, so thefilm 130 may also be referred to as a matrix (matrix). It should be noted that, the drawings herein illustrate thefilm layer 130 and the touch sensing electrode TE as different layer structures, but the polymer used for manufacturing thefilm layer 130 may penetrate between the metal nanowires before curing or in a pre-cured state to form the filler, and the metal nanowires may be embedded in thefilm layer 130 after the polymer is cured, that is, the invention is not particularly limited to the structure between thefilm layer 130 and the metal nanowire layer NWL (e.g., the touch sensing electrode TE). It is to be noted that thefilm 130 or the protection layer can be applied to the embodiments of the present disclosure, and is not limited to the embodiment shown in fig. 7B.

Fig. 9 shows a double-sided touch panel manufactured in the embodiment of the invention, which can be manufactured as follows: first, asubstrate 110 having a peripheral area PA and a display area VA defined in advance is provided. Then, forming metal nanowire layers NWL on the peripheral regions PA and the display regions VA of the first and second surfaces (e.g., the upper surface and the lower surface) of thesubstrate 110 respectively; then, forming a metal layer ML, wherein the metal layer ML is positioned in the peripheral area PA; then forming a patterning layer PL on the metal nanowire layer NWL and the metal layer ML on the first surface and the second surface respectively; then, the first and second surfaces are patterned according to the patterned layer PL, so as to form a first touch electrode TE1, a second touch electrode TE2 and aperipheral lead 120 on the first and second surfaces, and theperipheral lead 120 covers the first interlayer M1. Embodiments of the present invention may also include removing patterned layer PL. For simplicity of the drawing, the first intermediate layer M1 is not labeled in fig. 9.

For example, the etching solution provided in the present invention can simultaneously etch lines on the material layers in different areas, such as the metal/nanosilver in the peripheral area PA and the nanosilver in the display area VA, and has good linearity and control of lateral etching amount (CD bias), and no material residue in thenon-conductive area 136. In addition, the present embodiment can directly perform the double-sided etching process, which is beneficial to simplifying the process and increasing the yield.

Referring to fig. 9 and 9A, the first touch electrode TE1 is formed on one surface (such as the top surface) of thesubstrate 110, and the second touch electrode TE2 is formed on the other surface (such as the bottom surface) of thesubstrate 110, so that the first touch electrode TE1 and the second touch electrode TE2 are electrically insulated from each other; theperipheral lead 120 electrically connected to the first touch electrode TE1 covers the first middle layer M1; similarly, theperipheral lead 120 connected to the second touch electrode TE2 covers the corresponding first middle layer M1. The first touch electrode TE1 is a plurality of strip electrodes arranged along the first direction D1, and the second touch electrode TE2 is a plurality of strip electrodes arranged along the second direction D2. As shown in the figure, the extending directions of the elongated touch sensing electrodes TE1 and the elongated touch sensing electrodes TE2 are different and are staggered with each other. The first touch sensing electrode TE1 and the second touch sensing electrode TE2 can be used for transmitting a control signal and receiving a touch sensing signal, respectively. From this, the touch position can be obtained by detecting a signal change (e.g., a capacitance change) between the first touch sensing electrode TE1 and the second touch sensing electrode TE 2. With this arrangement, a user can perform touch sensing at each point on thesubstrate 110. Thetouch panel 100 of the present embodiment may further include afilm layer 130, which covers thetouch panel 100 in a full-surface manner, that is, thefilm layer 130 is disposed on both the upper and lower surfaces of thesubstrate 110 and covers the first touch electrode TE1, the second touch electrode TE2 and theperipheral lead 120, and thefilm layer 130 also covers and fills the upper and lowernon-conductive regions 136 of thesubstrate 110.

As in the previous embodiments, any side (e.g., the upper surface or the lower surface) of thesubstrate 110 may further include themark 140 and the second intermediate layer M2.

Fig. 10 is a schematic top view of atouch panel 100 according to some embodiments of the invention. This embodiment is similar to the previous embodiment, with the main differences: in the present embodiment, thetouch panel 100 further includes ashielding wire 160 disposed in the peripheral area PA, which mainly surrounds the touch sensing electrode TE and theperipheral lead 120, and theshielding wire 160 extends to the bonding area BA and is electrically connected to the ground terminal on theflexible circuit board 170, so that theshielding wire 160 can shield or eliminate signal interference or Electrostatic Discharge (ESD) protection, especially a small current change caused by a human hand touching the connecting wire around the touch device.

According to the above-mentioned manufacturing method, theshielding wire 160 and theperipheral lead 120 may be manufactured by using the same metal layer ML (i.e. they are made of the same metal material, such as the above-mentioned electroless copper plating layer), on which the metal nanowire layer NWL (or the third covering layer) is stacked, and are manufactured after etching according to the pattern of the patterned layer PL, it can also be understood that theshielding wire 160 is a composite structure layer including the metal nanowire layer NWL (or the composite layer thereof with the film layer) and the metal layer ML, and the description of the embodiment shown in fig. 2A and 2B can be specifically referred to. In another embodiment, the shieldingconductive line 160 and the peripheral lead 12 may be formed by forming the same metal layer ML (i.e. the same metal material, such as the aforementioned electroless copper plating layer) on the same layer, etching the same layer according to the pattern of the patterned layer PL, and removing the patterned layer PL, so that the shieldingconductive line 160 may be a composite structure layer including the metal nanowire layer NWL (or the third intermediate layer) and the metal layer ML, or the shieldingconductive line 160 may be a composite structure layer including the metal nanowire layer NWL (or the composite layer thereof with the film layer) and the metal layer ML, as described with reference to fig. 7A and 7B.

Fig. 11 shows another embodiment of the single-sided touch panel 100 according to the present invention, which is a single-sided bridge type touch panel. This embodiment is different from the above embodiments at least in that the touch sensing electrode TE formed by the transparent conductive layer (i.e., the metal nanowire layer 140A) formed on thesubstrate 110 after the patterning step may include: the touch panel comprises a first touch sensing electrode TE1 arranged along a first direction D1, a second touch sensing electrode TE2 arranged along a second direction D2, and a connecting electrode CE electrically connecting two adjacent first touchsensing electrodes TE 1; in addition, the insulatingblock 164 may be disposed on the connection electrode CE, for example, the insulatingblock 164 is formed of silicon dioxide; the bridgingwires 162 are disposed on the insulatingblock 164, for example, the bridgingwires 162 are formed by copper/ITO/metal nanowires, and the bridgingwires 162 are connected to two adjacent second touch sensing electrodes TE2 in the second direction D2, and the insulatingblock 164 is disposed between the connecting electrode CE and the bridgingwires 162 to electrically isolate the connecting electrode CE and the bridgingwires 162, so that the touch sensing electrodes in the first direction D1 and the second direction D2 are electrically isolated from each other. For the specific implementation, reference is made to the foregoing description, which is not repeated herein. Similar to the above embodiment, theperipheral lead 120 is made of a metal layer ML (such as the aforementioned electroless copper plating layer), on which a metal nanowire layer NWL is stacked, and both are formed by using the aforementioned etching solution; similarly, the first touch sensing electrode TE1 and the second touch sensing electrode TE2 are formed by using the etching solution, and theperipheral lead 120 is connected to the first touch sensing electrode TE1 and the second touch sensing electrode TE2, respectively.

The touch panel of the embodiment of the invention can be assembled with other electronic devices, such as a display with touch function, for example, thesubstrate 110 can be attached to a display module, such as a liquid crystal display module or an Organic Light Emitting Diode (OLED) display module, and the two can be attached by an optical adhesive or other similar adhesives; the touch sensing electrode TE can be bonded to an outer cover layer (e.g., a protective glass) by using an optical adhesive. The touch panel of the embodiment of the invention can be applied to electronic equipment such as a portable phone, a tablet computer, a notebook computer and the like.

In some embodiments, thetouch panel 100 described herein can be manufactured by a Roll-to-Roll (Roll-to-Roll) process, which uses conventional equipment and can be fully automated, and which can significantly reduce the cost of manufacturing the touch panel. The specific process of roll-to-roll coating is as follows: first, aflexible substrate 110 is selected, and thesubstrate 110 in a roll shape is mounted between two rollers, and the rollers are driven by a motor, so that thesubstrate 110 can perform a continuous process along the movement path between the two rollers. For example, deposition of the metal layer ML using a plating bath, deposition of a slurry containing metal nanowires on the surface of thesubstrate 110 using a storage tank, a spraying device, a brushing device, and the like, and a curing step are applied to form a metal nanowire layer NWL; forming a patterned layer PL (e.g., by flexographic printing) on the metal layer ML and/or the metal nanowire layer NWL; and patterning by using an etching tank or spraying an etching solution. Subsequently, the completedtouch panel 100 is rolled out by a roller at the rearmost end of the production line to form a touch sensor roll tape.

The touch sensor tape of the present embodiment may further include afilm layer 130, which covers theuncut touch panel 100 on the touch sensor roll in a full-scale manner, that is, thefilm layer 130 may cover theuncut touch panels 100 on the touch sensor roll, and then be cut and separated into theindividual touch panels 100.

In some embodiments of the present invention, thesubstrate 110 is preferably a transparent substrate, and more particularly, may be a rigid transparent substrate or a flexible transparent substrate, and the material thereof may be selected from transparent materials such as glass, acryl (PMMA), polyvinyl Chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polycarbonate (PC), Polystyrene (PS), Cyclic Olefin Polymers (COP), Cyclic Olefin Copolymer (COC), and the like.

The roll-to-roll line may adjust the sequence of multiple coating steps as desired along the path of motion of the substrate or may incorporate any number of additional stations as desired. For example, pressure rollers or plasma equipment may be installed in the production line to achieve proper post-processing.

In some embodiments, the metal nanowires formed may be further post-treated to increase their conductivity, and the post-treatment may be a process step including, for example, heating, plasma, corona discharge, UV ozone, pressure, or a combination thereof. For example, after the step of curing to form the metal nanowire layer NWL, a roller may be used to apply pressure thereon, and in one embodiment, a pressure of 50 to 3400psi, preferably 100 to 1000psi, 200 to 800psi, or 300 to 500psi, may be applied to the metal nanowire layer NWL by one or more rollers; the step of applying pressure is preferably performed before the step of coating thefilm layer 130. In some embodiments, the post-treatment with heat and pressure may be performed simultaneously; in particular, the metal nanowires formed may be subjected to pressure applied by one or more rollers as described above, while being heated, for example, at a pressure of 10 to 500psi, preferably 40 to 100 psi; while heating the roller to between about 70 ℃ and 200 ℃, preferably toBetween about 100 ℃ and 175 ℃, which can improve the conductivity of the metal nanowires. In some embodiments, the metal nanowires are preferably exposed to a reducing agent for post-treatment, for example, metal nanowires comprising silver nanowires are preferably exposed to a silver reducing agent for post-treatment, the silver reducing agent comprising a borohydride, such as sodium borohydride; boron nitrogen compounds such as Dimethylaminoborane (DMAB); or gaseous reducing agents, such as hydrogen (H)₂). And the exposure time is from about 10 seconds to about 30 minutes, preferably from about 1 minute to about 10 minutes.

Other details of this embodiment are substantially as described above, and will not be further described herein.

The structures of the different embodiments of the present invention may be cited with each other, and are not intended to be limited to the specific embodiments described above.

In some embodiments of the present invention, the metal nanowire layer NWL or/and the metal layer ML is etched by the etching solution at one time, so that an error space reserved in the alignment process can be avoided, and the width of the peripheral region can be effectively reduced.

In some embodiments of the present invention, the peripheral leads and/or marks of the peripheral region can be formed by etching two layers (e.g., the upper layer is the metal nanowire layer NWL and the lower layer is the metal layer ML, or the upper layer is the metal layer ML and the lower layer is the metal nanowire layer NWL) at one time, so that an error space reserved in the alignment process can be avoided, and the width of the peripheral region can be effectively reduced.

In some embodiments of the present invention, the copper layer and the silver nanowire layer are etched with the etching solution, and as shown in fig. 12, CD bias is 3um after 60 seconds of etching.

While the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (36)

Translated fromChinese

1.一种触控面板的制作方法，其特征在于，包含：1. A method of making a touch panel, comprising:提供一基板，其中该基板具有一显示区与一周边区；providing a substrate, wherein the substrate has a display area and a peripheral area;设置一金属层与一金属纳米线层，其中该金属纳米线层的一第一部分位于该显示区，该金属纳米线层的一第二部分与该金属层位于该周边区；及disposing a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is located in the display area, and a second part of the metal nanowire layer and the metal layer are located in the peripheral area; and进行一图案化步骤，其中该图案化步骤包括利用可蚀刻该金属层与该金属纳米线层的一蚀刻液将该金属层形成多个周边引线并同时将该金属层的该第二部分形成多个蚀刻层，其中该蚀刻液包括双氧水(0.2-40wt％)、酸类(0.2-20wt％)、金属缓蚀剂(0.1-10wt％)及/或安定剂(0.1-10wt％)。A patterning step is performed, wherein the patterning step includes using an etchant that can etch the metal layer and the metal nanowire layer to form the metal layer into a plurality of peripheral leads and simultaneously form the second portion of the metal layer into a plurality of peripheral leads. an etching layer, wherein the etching solution includes hydrogen peroxide (0.2-40wt%), acid (0.2-20wt%), metal corrosion inhibitor (0.1-10wt%) and/or stabilizer (0.1-10wt%).2.根据权利要求1所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属纳米线层的该第一部分形成一触控感应电极，该触控感应电极设置于该基板的该显示区，该触控感应电极电性连接该些周边引线。2 . The manufacturing method of a touch panel according to claim 1 , wherein the patterning step further comprises using the etching solution to form a touch sensing electrode from the first part of the metal nanowire layer, and the touch The sensing electrodes are disposed in the display area of the substrate, and the touch sensing electrodes are electrically connected to the peripheral leads.3.根据权利要求1所述的触控面板的制作方法，其特征在于，该金属缓蚀剂包含有含氮、含硫或含羟基的、具有表面活性的有机化合物、巯基苯并噻唑、苯并三唑和甲基苯并三唑中的至少一种。3 . The manufacturing method of a touch panel according to claim 1 , wherein the metal corrosion inhibitor comprises nitrogen-containing, sulfur-containing or hydroxyl-containing, surface-active organic compounds, mercaptobenzothiazole, benzene At least one of a triazole and a methylbenzotriazole.4.根据权利要求1所述的触控面板的制作方法，其特征在于，该安定剂包含有乙二胺四乙酸、二乙烯三胺五乙酸、羟乙基乙二胺三乙酸、二乙胺五乙酸、N-羟乙基乙二胺三乙酸和聚丙烯酸胺中的至少一种。4 . The manufacturing method of a touch panel according to claim 1 , wherein the stabilizer comprises ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, and diethylamine. 5 . At least one of pentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid and polyacrylic acid amine.5.根据权利要求1所述的触控面板的制作方法，其特征在于，该设置该金属层与该金属纳米线层包括：5 . The manufacturing method of the touch panel according to claim 1 , wherein the disposing of the metal layer and the metal nanowire layer comprises: 6 .设置该金属层于该周边区；及disposing the metal layer in the peripheral area; and接着设置该金属纳米线层于该显示区与该周边区，该第一部分位于该显示区而成形于该基板上，该第二部分位于该周边区而成形于该金属层上。Then, the metal nanowire layer is disposed in the display area and the peripheral area, the first part is located in the display area and is formed on the substrate, and the second part is located in the peripheral area and formed on the metal layer.6.根据权利要求5所述的触控面板的制作方法，其特征在于，该设置该金属层于该周边区包括：6 . The manufacturing method of the touch panel according to claim 5 , wherein the disposing the metal layer in the peripheral region comprises: 6 .将该金属层成形于该周边区与该显示区；及forming the metal layer in the peripheral area and the display area; and移除位于该显示区的该金属层。The metal layer in the display area is removed.7.根据权利要求5所述的触控面板的制作方法，其特征在于，该蚀刻液的成分包括双氧水(1.0-10.0wt％)、酸类(1.0-5.0wt％)、金属缓蚀剂(2.0-7.0wt％)及/或安定剂(3.0-8.0wt％)。7 . The manufacturing method of a touch panel according to claim 5 , wherein the composition of the etching solution comprises hydrogen peroxide (1.0-10.0 wt %), acids (1.0-5.0 wt %), metal corrosion inhibitors ( 2.0-7.0 wt%) and/or stabilizer (3.0-8.0 wt%).8.根据权利要求4所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属层形成多个标记，该些蚀刻层包括多个第一覆盖物及多个第二覆盖物，每一该些第一覆盖物设置在对应的该些周边引线上，每一该些第二覆盖物设置在对应的该些标记上。8 . The manufacturing method of a touch panel according to claim 4 , wherein the patterning step further comprises forming a plurality of marks on the metal layer by using the etching solution, and the etching layers comprise a plurality of first covers. 9 . and a plurality of second covers, each of the first covers is disposed on the corresponding peripheral leads, and each of the second covers is disposed on the corresponding marks.9.根据权利要求1所述的触控面板的制作方法，其特征在于，该设置该金属层与该金属纳米线层包括：9 . The manufacturing method of the touch panel according to claim 1 , wherein the disposing of the metal layer and the metal nanowire layer comprises: 10 .设置该金属纳米线层于该显示区与该周边区；及disposing the metal nanowire layer in the display area and the peripheral area; and接着设置该金属层于该周边区，其中该金属层位于该第二部分上。Then, the metal layer is disposed on the peripheral region, wherein the metal layer is located on the second portion.10.根据权利要求9所述的触控面板的制作方法，其特征在于，该蚀刻液的成分包括双氧水(1.0-5.0wt％)、酸类(0.1-0.6wt％)、金属缓蚀剂(2.0-7.0wt％)及/或安定剂(3.0-8.0wt％)。10 . The manufacturing method of the touch panel according to claim 9 , wherein the composition of the etching solution comprises hydrogen peroxide (1.0-5.0 wt %), acids (0.1-0.6 wt %), metal corrosion inhibitors ( 2.0-7.0 wt%) and/or stabilizer (3.0-8.0 wt%).11.根据权利要求9所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属层形成多个标记，该些蚀刻层包括多个第一中间层及多个第二中间层，每一该些第一中间层设置在对应的该些周边引线与该基板之间，每一该些第二中间层设置在对应的该些标记与该基板之间。11 . The manufacturing method of a touch panel according to claim 9 , wherein the patterning step further comprises using the etching solution to form a plurality of marks on the metal layer, and the etching layers comprise a plurality of first intermediate layers 11 . and a plurality of second intermediate layers, each of the first intermediate layers is disposed between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is disposed between the corresponding marks and the substrate .12.根据权利要求1所述的触控面板的制作方法，其特征在于，还包括设置一膜层。12 . The manufacturing method of the touch panel according to claim 1 , further comprising disposing a film layer. 13 .13.根据权利要求1所述的触控面板的制作方法，其特征在于，该制作方法可于该基板的一面或双面进行。13 . The manufacturing method of the touch panel according to claim 1 , wherein the manufacturing method can be performed on one side or both sides of the substrate. 14 .14.一种根据权利要求1所述的触控面板的制作方法所制成的触控面板。14. A touch panel manufactured by the manufacturing method of the touch panel according to claim 1.15.一种蚀刻液，用于进行一图案化步骤，其特征在于，包括：双氧水(0.2-40wt％)、酸类(0.2-20wt％)、金属缓蚀剂(0.1-10wt％)及/或安定剂(0.1-10wt％)。15. An etching solution for carrying out a patterning step, characterized in that it comprises: hydrogen peroxide (0.2-40wt%), acids (0.2-20wt%), metal corrosion inhibitors (0.1-10wt%) and/ or stabilizer (0.1-10wt%).16.根据权利要求15所述的蚀刻液，其特征在于，该酸类包含有机酸、无机酸或其组合。16. The etching solution of claim 15, wherein the acids comprise organic acids, inorganic acids or combinations thereof.17.根据权利要求16所述的蚀刻液，其特征在于，该有机酸包含有羧酸、二羧酸、三羧酸、烷基羧酸、乙酸、乙二酸、苯六甲酸、甲酸、氯乙酸、苯甲酸、三氟乙酸、丙酸和丁酸中的至少一种。17. The etching solution according to claim 16, wherein the organic acid comprises carboxylic acid, dicarboxylic acid, tricarboxylic acid, alkylcarboxylic acid, acetic acid, oxalic acid, mellitic acid, formic acid, chlorine At least one of acetic acid, benzoic acid, trifluoroacetic acid, propionic acid and butyric acid.18.根据权利要求16所述的蚀刻液，其特征在于，该无机酸包含有磷酸、硝酸、醋酸和盐酸中的至少一种。18. The etching solution according to claim 16, wherein the inorganic acid comprises at least one of phosphoric acid, nitric acid, acetic acid and hydrochloric acid.19.根据权利要求15所述的蚀刻液，其特征在于，该金属缓蚀剂包含有含氮、含硫或含羟基的、具有表面活性的有机化合物、巯基苯并噻唑、苯并三唑和甲基苯并三唑中的至少一种。19. The etching solution according to claim 15, wherein the metal corrosion inhibitor comprises nitrogen-containing, sulfur-containing or hydroxyl-containing, surface-active organic compounds, mercaptobenzothiazole, benzotriazole and At least one of methylbenzotriazoles.20.根据权利要求15所述的蚀刻液，其特征在于，该安定剂包含有乙二胺四乙酸、二乙烯三胺五乙酸、羟乙基乙二胺三乙酸、二乙胺五乙酸、N-羟乙基乙二胺三乙酸和聚丙烯酸胺中的至少一种。20. The etching solution according to claim 15, wherein the stabilizer comprises ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N -At least one of hydroxyethylethylenediaminetriacetic acid and polyacrylic acid amine.21.一种蚀刻液，用于进行一图案化步骤，其特征在于，包括：双氧水(0.01-50wt％)、金属缓蚀剂(0.1-10wt％)及/或安定剂(0.1-10wt％)。21. An etching solution for carrying out a patterning step, characterized in that it comprises: hydrogen peroxide (0.01-50wt%), metal corrosion inhibitor (0.1-10wt%) and/or stabilizer (0.1-10wt%) .22.根据权利要求21所述的蚀刻液，其特征在于，该金属缓蚀剂包含有含氮、含硫或含羟基的、具有表面活性的有机化合物、巯基苯并噻唑、苯并三唑和甲基苯并三唑中的至少一种。22. The etching solution according to claim 21, wherein the metal corrosion inhibitor comprises nitrogen-containing, sulfur-containing or hydroxyl-containing, surface-active organic compounds, mercaptobenzothiazole, benzotriazole and At least one of methylbenzotriazoles.23.根据权利要求21所述的蚀刻液，其特征在于，该安定剂包含有乙二胺四乙酸、二乙烯三胺五乙酸、羟乙基乙二胺三乙酸、二乙胺五乙酸、N-羟乙基乙二胺三乙酸和聚丙烯酸胺中的至少一种。23. The etching solution according to claim 21, wherein the stabilizer comprises ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, diethylaminepentaacetic acid, N -At least one of hydroxyethylethylenediaminetriacetic acid and polyacrylic acid amine.24.一种触控面板的制作方法，其特征在于，包含：24. A method for manufacturing a touch panel, comprising:提供一基板，其中该基板具有一显示区与一周边区；providing a substrate, wherein the substrate has a display area and a peripheral area;设置一金属层与一金属纳米线层，其中该金属纳米线层的一第一部分位于该显示区，该金属纳米线层的一第二部分与该金属层位于该周边区；及disposing a metal layer and a metal nanowire layer, wherein a first part of the metal nanowire layer is located in the display area, and a second part of the metal nanowire layer and the metal layer are located in the peripheral area; and进行一图案化步骤，其中该图案化步骤包括使用一蚀刻液对该金属纳米线层进行蚀刻，使用另一蚀刻液对该金属层进行蚀刻，以将该金属层形成多个周边引线并同时将该金属层的该第二部分形成多个蚀刻层，其中该蚀刻液包括双氧水(0.01-50wt％)、金属缓蚀剂(0.1-10wt％)及/或安定剂(0.1-10wt％)。A patterning step is performed, wherein the patterning step includes using an etchant to etch the metal nanowire layer, and using another etchant to etch the metal layer to form a plurality of peripheral leads from the metal layer and simultaneously etch the metal nanowire layer. The second portion of the metal layer forms a plurality of etching layers, wherein the etching solution includes hydrogen peroxide (0.01-50wt%), metal corrosion inhibitor (0.1-10wt%) and/or stabilizer (0.1-10wt%).25.根据权利要求24所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属纳米线层的该第一部分形成一触控感应电极，该触控感应电极设置于该基板的该显示区，该触控感应电极电性连接该些周边引线。25 . The method for fabricating a touch panel according to claim 24 , wherein the patterning step further comprises using the etching solution to form a touch sensing electrode from the first part of the metal nanowire layer, and the touch The sensing electrodes are disposed in the display area of the substrate, and the touch sensing electrodes are electrically connected to the peripheral leads.26.根据权利要求24所述的触控面板的制作方法，其特征在于，该金属缓蚀剂包含有含氮、含硫或含羟基的、具有表面活性的有机化合物、巯基苯并噻唑、苯并三唑和甲基苯并三唑中的至少一种。26 . The method of manufacturing a touch panel according to claim 24 , wherein the metal corrosion inhibitor comprises nitrogen-containing, sulfur-containing or hydroxyl-containing, surface-active organic compounds, mercaptobenzothiazole, benzene At least one of a triazole and a methylbenzotriazole.27.根据权利要求24所述的触控面板的制作方法，其特征在于，该安定剂包含有乙二胺四乙酸、二乙烯三胺五乙酸、羟乙基乙二胺三乙酸、二乙胺五乙酸、N-羟乙基乙二胺三乙酸和聚丙烯酸胺中的至少一种。27 . The method of manufacturing a touch panel according to claim 24 , wherein the stabilizer comprises ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, and diethylamine. 28 . At least one of pentaacetic acid, N-hydroxyethylethylenediaminetriacetic acid and polyacrylic acid amine.28.根据权利要求24所述的触控面板的制作方法，其特征在于，该设置该金属层与该金属纳米线层包括：28. The manufacturing method of a touch panel according to claim 24, wherein the disposing the metal layer and the metal nanowire layer comprises:设置该金属层于该周边区；及disposing the metal layer in the peripheral region; and接着设置该金属纳米线层于该显示区与该周边区，该第一部分位于该显示区而成形于该基板上，该第二部分位于该周边区而成形于该金属层上。Then, the metal nanowire layer is disposed in the display area and the peripheral area, the first part is located in the display area and is formed on the substrate, and the second part is located in the peripheral area and formed on the metal layer.29.根据权利要求28所述的触控面板的制作方法，其特征在于，该设置该金属层于该周边区包括：29. The manufacturing method of the touch panel according to claim 28, wherein the disposing the metal layer in the peripheral area comprises:将该金属层成形于该周边区与该显示区；及forming the metal layer in the peripheral area and the display area; and移除位于该显示区的该金属层。The metal layer in the display area is removed.30.根据权利要求27所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属层形成多个标记，该些蚀刻层包括多个第一覆盖物及多个第二覆盖物，每一该些第一覆盖物设置在对应的该些周边引线上，每一该些第二覆盖物设置在对应的该些标记上。30 . The method of manufacturing a touch panel according to claim 27 , wherein the patterning step further comprises using the etching solution to form a plurality of marks on the metal layer, and the etching layers comprise a plurality of first covers. 31 . and a plurality of second covers, each of the first covers is disposed on the corresponding peripheral leads, and each of the second covers is disposed on the corresponding marks.31.根据权利要求24所述的触控面板的制作方法，其特征在于，该设置该金属层与该金属纳米线层包括：31. The manufacturing method of the touch panel according to claim 24, wherein the disposing the metal layer and the metal nanowire layer comprises:设置该金属纳米线层于该显示区与该周边区；及disposing the metal nanowire layer in the display area and the peripheral area; and接着设置该金属层于该周边区，其中该金属层位于该第二部分上。Then, the metal layer is disposed on the peripheral region, wherein the metal layer is located on the second portion.32.根据权利要求31所述的触控面板的制作方法，其特征在于，该设置该金属层于该周边区包括：32. The manufacturing method of the touch panel according to claim 31, wherein the disposing the metal layer in the peripheral region comprises:将该金属层成形于该周边区与该显示区；及forming the metal layer in the peripheral area and the display area; and移除位于该显示区的该金属层。The metal layer in the display area is removed.33.根据权利要求31所述的触控面板的制作方法，其特征在于，该图案化步骤还包括利用该蚀刻液将该金属层形成多个标记，该些蚀刻层包括多个第一中间层及多个第二中间层，每一该些第一中间层设置在对应的该些周边引线与该基板之间，每一该些第二中间层设置在对应的该些标记与该基板之间。33 . The method of manufacturing a touch panel according to claim 31 , wherein the patterning step further comprises forming a plurality of marks on the metal layer by using the etching solution, and the etching layers comprise a plurality of first intermediate layers 33 . and a plurality of second intermediate layers, each of the first intermediate layers is disposed between the corresponding peripheral leads and the substrate, and each of the second intermediate layers is disposed between the corresponding marks and the substrate .34.根据权利要求24所述的触控面板的制作方法，其特征在于，还包括设置一膜层。34. The manufacturing method of the touch panel according to claim 24, further comprising disposing a film layer.35.根据权利要求24所述的触控面板的制作方法，其特征在于，该制作方法可于该基板的一面或双面进行。35. The manufacturing method of the touch panel of claim 24, wherein the manufacturing method can be performed on one side or both sides of the substrate.36.一种根据权利要求24所述的触控面板的制作方法所制成的触控面板。36. A touch panel manufactured by the method for manufacturing a touch panel according to claim 24.

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